TW201223339A - Induction heating device, induction heating method, and program of the same - Google Patents

Induction heating device, induction heating method, and program of the same Download PDF

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TW201223339A
TW201223339A TW099140319A TW99140319A TW201223339A TW 201223339 A TW201223339 A TW 201223339A TW 099140319 A TW099140319 A TW 099140319A TW 99140319 A TW99140319 A TW 99140319A TW 201223339 A TW201223339 A TW 201223339A
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voltage
induction heating
current
coil
conversion device
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TW099140319A
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Chinese (zh)
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TWI514930B (en
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Naoki Uchida
Yoshihiro Okazaki
Kazuhiro Ozaki
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Mitsui Engineering & Amp Shipbuilding Co Ltd
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Abstract

The invention provides an induction heating device, induction heating method, and program of the same capable of reducing the main switch of inverse conversion device. The device comprises several induction heating coils 20 which are positioned in close proximity; a plurality of inverse conversion devices 30 having capacitors 40 serially connected to each of the induction heating coils for converting DC voltage into square wave voltage; and a control circuit 15 that controls alignment of the phases of the coil currents flowing through several induction heating coils. The control circuit 15 controls the timing at which the square wave voltage transitions, so as to maintain instantaneous value of the square wave voltage in either DC voltage or reverse voltage when the coil voltage zero-crosses.

Description

201223339 六、發明說明: 【發明所屬之技術領域】 本發月係關於使用複數誘導加熱線圈的誘導加熱裝 置、誘導加熱方法以及其程式。 【先前技術】 熱處理晶圓的半導體製造裝置,因為熱變形等的問 題,必須儘量控制為小的晶圓表面溫度差(例如± 1。(3以 内)。又,必須高速升溫(例如lOOt: /秒)至希望的高溫(例 如1350 C)。於是,廣為人知的誘導加熱裝置,係誘導加 熱線圈分割為複數個,每個分割的誘導加熱線圈個別連接 至高頻電源(例如反相器),進行電力控制。然而,由於分 割的誘導加熱線圈互相靠近,存在互相誘導電感M,成為 產生互相誘導電壓的狀態。因此,各反相器成為經由相互 電感並聯操作的狀態,反相器相互間當電流相位有差距 時,反相器相互間經常發生電力授受。即,依各反相器的 電流相位差距,由於分割的誘導加熱線圈間在磁場產生相 位差,鄰接的誘導加熱線圈的邊界附近磁場減弱,降低誘 導加熱電力產生的發熱密度。結果,被加熱物(晶圓等)的 表面恐怕發生溫度不均。 於疋’發明者等提出「分區控制誘導加熱(z〇ne201223339 VI. Description of the Invention: [Technical Field to Be Invented by the Invention] This publication relates to an induction heating device using a complex induction heating coil, an induction heating method, and a program therefor. [Prior Art] A semiconductor manufacturing apparatus for heat-treating a wafer must be controlled to a small wafer surface temperature difference (for example, ±1 (within 3) due to problems such as thermal deformation. Further, it is necessary to heat up at a high speed (for example, lOOt: / Second) to the desired high temperature (eg 1350 C). Thus, the well-known induction heating device divides the induction heating coil into a plurality of individual heating coils that are individually connected to a high frequency power source (eg, an inverter) for performing Power control. However, since the divided induction heating coils are close to each other, there is a mutual induction inductance M, which is a state in which mutual induced voltages are generated. Therefore, the inverters are in a state of being operated in parallel via mutual inductance, and the inverters are currents with each other. When there is a gap in the phase, the inverters often receive power with each other. That is, depending on the current phase difference of each inverter, the phase difference between the induced heating coils in the magnetic field is generated, and the magnetic field near the boundary of the adjacent induced heating coil is weakened. , reducing the heat generation density generated by the heating power. As a result, the object to be heated (wafer, etc.) The surface may be uneven in temperature. Yu Yu’s inventor and others proposed “partition control induced heating (z〇ne

Controlled Induction Heating : ZCI Η)」的技術,鄰接的 誘導加熱線圈之間產生互相誘導電壓,即使互相感應存在 的狀況下’反相器相互間不流通循環電流的同時,分割的 201223339 誘導加熱線圈邊界附近發熱密度不下降,可以適當控制誘 導加熱電力(例如’參考專利文件1)。根據此zc IΗ的技術, 各電源單位的構成分別具有降壓截波器與電壓形反相器 (以下,僅稱反相器)。於是,複數電力供給區中分割的各 電源單位,個別連接至分割的各誘導加熱線圈,進行電力 供給。 此時’電流同步控制(即,電流相位的同步控制)各電 源單位中的各反相器’藉由同步流入各反相器的電流相 位’複數反相器間不流通循環電流。換言之,複數反相器 間不授受電流,不會因流入反相器的再生電力而發生過電 壓。又,反相器藉由同步流至分割的各誘導加熱線圈的電 流相位,各誘導加熱線圈的邊界附近誘導加熱電力產生的 發熱密度不會急劇下降。又,各降壓截波器藉由可變各反 相器的輸入電壓,進行各反相器的電流振幅控制,控制供 給至各誘導加熱線圈的誘導加熱電力。即,專利文件丨中 揭示的ZCIH技術,藉由對各降壓截波器進行電流振幅控 制,對各分區進行誘導加熱線圈的電力控制,藉由各反相 β的電流同步控制,達到抑制複數反相器間的循環電流, =及各誘導加熱線圈的邊界附近誘導加熱電力產生的發熱 密度均一化。使用如此的ZCIH技術,由於降壓截波器的控 制:與反相器的控制系係進行個別控制,被加熱物上的發 熱分佈可以任意控制。即’根據專利文件1中揭示的ZCIH 技術,可以進行急速且精密的溫度控制以及溫度分佈控制。 專矛J文件2中’揭示同時供給直流電力給個別連 201223339 接至複數誘導加熱線圈的反相器,且同時運轉複數誘導加 ”、、線圈的技術。具體而έ,此技術驗出連接至串聯共振電 路的各反相器輸出電流的零交又,成為比較各反相器輸出 電流的零交叉時序與標準脈衝上升時序。此技術藉由調整 輸出電流的頻率,使根據比較個別算出與基準脈衝的相位 差為0或接近〇 ’使各反相器的輸出電流同步。又,此技 術在各反相器的輸出電流同步後,藉由增減反相器的輸出 電:’控制流入各誘導加熱線圈的電流,達到加熱對象物 的溫度分佈均一化。 文件1中,圯載有關共振型轉換電路,具 :器輸出電流的相位對反相器輪出電壓延遲的共振電流相 =模式,以及反相器輸出電流的相位對反相器 振電流相位提前模式。主要記載共振電流相位 切換元件導通時! 然以零電流切換導通,但 極體的反恢復動作,流 換几件的電流除了 ±L振雷、 復雷冷紐里 ,、振電机,加上轉流二極體的反恢 波二/ 換元件的導通損失增加。對此,主要吃載 :她“目位延遲模式的共振型轉換電路,導通動作;: 電流切換,斷開動作為硬切換,…導通動作為零 無損失電容緩、秸由^切換元件並聯連接 切換(zvs: Zer… σ更切換的斷開動作為零電壓 0 V〇Uage Switching)。 又’非專利文件 又時,藉由揭不全橋電路,當電流為零交 由輪出短路,迴避切埴_μ山. 現穩定驅動電戌g I 、兀牛成為開路狀態’並實 哥罨感負載的ZVS動作。 201223339 [先前技術文件] [專利文件] [專利文件1 ]特開2007-26750號公報 [專利文件2]特開2004-146283號公報 [非專利文件] [非專利文件1]電力電子電路,歐姆社,電氣學會半 導體電力轉換系統調查專門委員會編,第8章,共振型轉 換電路 # [非專利文件2]電晶體技術,Cq出版社,2〇〇4年6月 號’第228頁 【發明内容】 [發明欲解決的課題] 專利文件1的技術中使用的反相器,為了降低切換損 失通常使用共振電流相位延遲模式,比驅動電壓上升時 序更延遲反轉流入誘導加熱線圈的正弦波電流方向的零交 叉時序。不過,為了調整施加給誘導加熱線圈的供給電力 (有效電力),矩形波電壓的脈衝幅縮短時,正弦波從負到 正零交叉的零交叉時序比驅動電壓上升時序更提前,常以 共振電流相位提前模式切換。因此,反相器(逆轉換裝置) 在切換兀件導通時,流入切換元件的電流加上轉流二極體 的反恢復電流,具有增加切換損失的問題。 於是,本發明係用以解決此問題,目的在於不論脈衝 幅為何’提供可以降低逆轉換裝置切換損失的誘導加熱裝 201223339 置、誘導加熱方法以及其程式。 [用於解決課題的手段] 為了達成上述目的,本發明的誘導加熱裝置(1〇〇)包括 鄰近配置的複數誘導加熱線圈(2 〇 )、串聯連接至各上述誘 導加熱線圈的電容器(4〇)、施加從直流電壓轉換的高頻電 壓至各上述誘導加熱線圈及上述電容的串聯電路的複數逆 轉換裝置(30)、以及電壓幅控制上述高頻電壓的同時,控 制上述複數逆轉換裝置使流至上述複數誘導加熱線圈的線 圈電机相位致化的控制電路;上述複數逆轉換裝置的特 徵為各上述直流電壓是共通的。又,括弧内的數字為例示。 為了凋整供給至各誘導加熱線圈的有效電力,不改變 直流電壓’取代縮短輸出電力小的逆轉換裝置的矩形波電 壓脈衝幅,降低共同施加至各逆轉換裝置的直流電壓,輸 出電力大的逆轉換裝置的高頻電壓(矩形波電壓)脈衝幅增 長。因此,由於各逆轉換裝置迴避共振電流相位提前模式, 以共振電流相位延遲模式驅動,不論高頻電壓脈衝幅為 何’切換損失都降低。X,線圈電流零交又時,由於逆轉 換裝置的輸出電壓穩^,降低電感負載產生的電渴電壓。 又,可以提高驅動頻率,增加相位延遲,取代增長脈衝幅。 又,最好降低上述直流電壓,使上述複數逆轉換裝置 轉換的高頻電壓的電壓幅最大值成為既定值以上。藉此, 如既定值以上的電壓幅的大輸出逆轉換裝置,控制直流電 壓,比施加至上述串聯電路的施加電壓的上升時序,更延 遲流至上述串聯電路的電流從負到正零交叉的零交又時 201223339 序以共振電流延遲相位模式動作。另一方面,電壓幅未 達既疋值的小輸出逆轉換裝置以共振電流提前相位模式 動作c由於疋小輸出’儲存損失、電渴電壓也變小,免 除了電晶體的破壞。 上述轉換裝置具有各臂與電晶體(例如FET(場效電晶 體)、IGBT(絕緣閘雙極電晶體))逆並聯連接的二極體,上 述直流電壓由截波器電路或順轉換裝置產生。 又,最好再具備異常停止部,上述線圈電流由負到正 零交叉後,上述高頻電壓上升時,停止上述逆轉換裝置。 藉此,迴避切換損失產生的發熱或過電流產生的破壞。 又’上述複數誘導加熱線圈,靠近共同的發熱體,上 述控制電路最好分別可變控制上述矩形波電壓脈衝幅,以 均一化各上述誘導加熱線圈供給至上述發熱體的電磁能。 [發明效果] 根據本發明,不論脈衝幅為何,逆轉換裝置的切換損 失降低。又’切換時的電湧電壓也降低。 【實施方式】 [第一實施例] 有關本發明的誘導加熱裝置的構成,使用第1圖及第 2圖來說明。 第1圖中’誘導加熱裝置100的構成包括降壓截波器 10、複數逆轉換裝置30、31,…,35、複數誘導加熱線圈20、 21,…,25、以及控制電路15;各誘導加熱線圈2〇、21,…,25Controlled Induction Heating : ZCI Η)" technology, the mutual induced voltage is generated between the adjacent induction heating coils, and even if the mutual induction exists, the inverters do not circulate the circulating current between each other, and the divided 201223339 induces the heating coil boundary. The nearby heat density does not decrease, and the induced heating power can be appropriately controlled (for example, 'Reference Patent Document 1>). According to this zc IΗ technique, each power supply unit has a buck chopper and a voltage-shaped inverter (hereinafter, simply referred to as an inverter). Then, the respective power supply units divided in the plurality of power supply areas are individually connected to the divided induction heating coils to supply electric power. At this time, the current-synchronization control (i.e., the synchronous control of the current phase) of each of the inverter units in each of the power supply units does not flow the circulating current between the plurality of inverters by synchronously flowing the currents of the inverters. In other words, no current is applied between the complex inverters, and no overvoltage occurs due to the regenerative power flowing into the inverter. Further, the inverter flows synchronously to the current phases of the divided induction heating coils, and the heat generation density generated by the induction heating power in the vicinity of the boundary of each induction heating coil does not drastically decrease. Further, each of the step-down choppers controls the current amplitude of each inverter by varying the input voltage of each inverter, and controls the induced heating power supplied to each of the induced heating coils. That is, the ZCIH technology disclosed in the patent document ,, by controlling the current amplitude of each step-down chopper, performs power control of the induction heating coil for each partition, and achieves suppression of the complex number by current synchronous control of each reverse phase β. The circulating current between the inverters, = and the heating density generated by the induction heating power near the boundary of each induced heating coil are uniformized. With such ZCIH technology, since the control of the buck chopper: individual control with the control system of the inverter, the heat distribution on the object to be heated can be arbitrarily controlled. That is, according to the ZCIH technology disclosed in Patent Document 1, rapid and precise temperature control and temperature distribution control can be performed. In the special spear J file 2, 'disclose the technique of simultaneously supplying DC power to the inverter of the individual connection 201223339 to the complex induction heating coil, and simultaneously operating the complex induction plus", and the coil. Specifically, this technique detects connection to The zero-crossing of the output current of each inverter of the series resonant circuit is a zero-crossing timing and a standard pulse rising timing of comparing the output currents of the inverters. This technique adjusts the frequency of the output current so that the calculation is based on comparison and calculation. The phase difference of the pulse is 0 or close to 〇' to synchronize the output current of each inverter. Moreover, after the output current of each inverter is synchronized, the output of the inverter is increased or decreased: 'control flow into each Inducing the current of the heating coil to achieve a uniform temperature distribution of the object to be heated. In Document 1, the resonance-type conversion circuit has a resonance current phase = mode in which the phase of the output current of the device is delayed by the voltage of the inverter. And the phase of the inverter output current to the inverter phase current advance mode. It is mainly stated that the resonant current phase switching element is turned on! Switching on, but the anti-recovery action of the polar body, the current of several parts of the flow is divided by ±L, Thunder, and Thunder, and the motor, plus the anti-recovery of the diode The conduction loss increases. In this regard, the main load: her "resonance type conversion circuit of the head delay mode, conduction action;: current switching, disconnection action is hard switching, ... conduction action is zero loss-free capacitance slow, straw by ^ The switching element is connected in parallel (zvs: Zer... σ is further switched to zero voltage 0 V〇Uage Switching). In addition, the 'non-patent document, by uncovering the full bridge circuit, when the current is zero, the wheel is short-circuited, avoiding the cut _μ山. Now the stable drive 戌g I, the yak becomes the open state' and the real brother The ZVS action of the load. [Patent Document 1] JP-A-2007-26750 [Patent Document 2] JP-A-2004-146283 [Non-Patent Document] [Non-Patent Document 1] Power Electronic Circuit, Ohm Society, Electrical Society Semiconductor Power Conversion System Investigation Special Committee, Chapter 8, Resonance Conversion Circuit # [Non-Patent Document 2] Transistor Technology, Cq Press, 2, 4, June issue, page 228 [Invention [Problem to be Solved by the Invention] The inverter used in the technique of Patent Document 1 generally uses a resonant current phase delay mode to reduce the switching loss, and reverses the sinusoidal current flowing into the induction heating coil more delay than the driving voltage rising timing. Zero crossing timing of the direction. However, in order to adjust the supply power (effective power) applied to the induction heating coil, when the pulse width of the rectangular wave voltage is shortened, the zero-crossing timing of the sine wave from negative to positive zero crossing is earlier than the driving voltage rising timing, often with a resonant current Phase advance mode switching. Therefore, the inverter (inverse conversion means) has a problem that the current flowing into the switching element and the reverse recovery current of the commutating diode are increased when the switching element is turned on, which increases the switching loss. Accordingly, the present invention has been made to solve the problem, and the object is to provide an induction heating device, an induction heating method, and a program thereof, which can reduce the switching loss of the reverse conversion device regardless of the pulse amplitude. [Means for Solving the Problem] In order to achieve the above object, an induction heating device (1〇〇) of the present invention includes a plurality of induction heating coils (2 邻近) disposed adjacent to each other, and a capacitor connected in series to each of the above-described induction heating coils (4〇) Controlling the complex inverse conversion device by applying a high-frequency voltage converted from a DC voltage to a complex inverse conversion device (30) that induces a series circuit of the heating coil and the capacitor, and a voltage amplitude to control the high-frequency voltage A control circuit for phase-forming the coil motor of the plurality of induced heating coils; wherein the complex inverse conversion device is characterized in that each of the DC voltages is common. Also, the numbers in parentheses are exemplified. In order to withstand the effective power supplied to each of the induction heating coils, the DC voltage is not changed, instead of shortening the rectangular wave voltage pulse width of the inverse conversion device having a small output power, and the DC voltage applied to each of the inverse conversion devices is reduced, and the output power is large. The high frequency voltage (rectangular wave voltage) pulse amplitude of the inverse conversion device increases. Therefore, since each of the inverse conversion means avoids the resonant current phase advance mode and is driven in the resonant current phase delay mode, the switching loss is lowered regardless of the high frequency voltage pulse amplitude. X, when the coil current is zero-crossed, the output voltage of the reverse conversion device is stabilized, and the thirst voltage generated by the inductive load is reduced. In addition, the drive frequency can be increased, and the phase delay can be increased instead of increasing the pulse width. Further, it is preferable that the DC voltage is lowered so that the maximum value of the voltage amplitude of the high-frequency voltage converted by the complex inverse conversion means becomes a predetermined value or more. Thereby, a large output inverse conversion device such as a voltage amplitude of a predetermined value or more controls the DC voltage, and delays the current flowing to the series circuit from negative to positive zero crossing than the rising timing of the applied voltage applied to the series circuit. The zero-crossing time 201223339 sequence operates in the resonant current delay phase mode. On the other hand, a small output inverse conversion device in which the voltage amplitude does not reach the threshold value is operated in the resonant current advance phase mode. Since the small output 'storage loss and the thirst voltage are also small, the destruction of the transistor is eliminated. The conversion device has a diode in which each arm is connected in anti-parallel with a transistor (for example, an FET (Field Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor)), and the DC voltage is generated by a chopper circuit or a forward conversion device. . Further, it is preferable to further include an abnormal stop portion, and when the coil current is crossed from negative to positive zero, the reverse conversion device is stopped when the high-frequency voltage rises. Thereby, the damage caused by the heat generated by the switching loss or the overcurrent is avoided. Further, the plurality of induced heating coils are adjacent to the common heating element, and the control circuit preferably variably controls the rectangular wave voltage pulse width to uniformize the electromagnetic energy supplied to the heating element by the respective induction heating coils. [Effect of the Invention] According to the present invention, the switching loss of the inverse conversion device is reduced regardless of the pulse width. Also, the surge voltage at the time of switching is also lowered. [Embodiment] [First Embodiment] A configuration of an induction heating device according to the present invention will be described with reference to Figs. 1 and 2 . In Fig. 1, the configuration of the induction heating device 100 includes a buck chopper 10, complex inverse conversion devices 30, 31, ..., 35, complex induction heating coils 20, 21, ..., 25, and a control circuit 15; Heating coil 2〇, 21,...,25

S 8 201223339 藉由產生高頻磁束’渴電流流入共同的發熱體(例如,碳石 墨)(第2圖),使此發熱體發熱。 又’控制誘導加熱裝置i 〇〇,使全部的誘導加熱線圈 2〇、21,...,25的電流相位以及頻率—致,以降低鄰接的誘 導加熱線圈產生的相互誘導電堡影響。控制誘導加熱線圈 2〇、21,···,25的電流相位一致,由於發生磁場不產生相位 差鄰接的誘導加熱線圈的邊界附近磁場不會減弱,誘導 加熱電力產生的發熱密度不下降。結果,被加熱物的表面 不會產生溫度不均。 又,逆轉換裝置30、31, ...,35為了降低切換損失,提 高驅動頻率,比誘導加熱線圈2〇、21,…,25的等效電感與 串聯連接的電容器C的電容的共振頻率高,成為以共振電 流相位延遲模式驅動。 其次,使用第2圖來說明有關加熱對象物。 第2圖係使用晶圓的熱處理的RTA(快速熱回火)裝置 構成圖。RAT裝置具有埋設複數誘導加熱線圈2〇、21,…,託 在凹部的耐熱板、設置在此耐熱板表面上的共同發熱體、 逆轉換裝置(第1圖)、以及降壓截波器1 〇構成的zc丨Η反 相器,構成以複數誘導加熱線圈20 ' 21,…,25,將發熱體 以複數區(例如6區)分割加熱。此RTA裝置的構成,產主 誘導加熱線圈20、21,…,25的各高頻磁束,此高頻磁束, 例如渦電流流入碳石墨形成的發熱體,根據此渦電流流入 碳石墨的電阻成分,發熱體發熱。換言之,rTa敦置的構 成用於產生誘導加熱線圈20、21,…,25的各高頻電磁能, 201223339 藉由此電磁月b,發熱體發熱,以此發熱體的賴射熱加熱被 加熱物的玻璃基柘、a ^ 板 日日圓。又,半導體的熱處理中,此加 熱在減壓空氣下進行。 考慮鄰接的誘導加熱線圈2 0、21,則考慮第3 (a) 圖所7^的’、振電路。即,誘導加熱線圈2G、21中存在等效 電感U Lb的誘導成分以及等效電阻值Ra、Rb的電阻成 分,經由雷客装 P 0 1、〇2’施加電壓^1、^2。又,誘導加熱 線圈2〇、21 ’由於相互鄰接’以相互誘導電⑤M(M1)結合。 在此,等效電阻值Ra、Rb係以誘導加熱線圈2。的高頻磁 束流動渦電流的碳石墨的等效電阻值。 又區域1的誘導加熱線圈2〇内流入的電流為11,絕 緣電晶體Tr。的輸出電壓為V”區域2的誘導加熱線圈21 内流入:電流為“’以及絕緣電晶體Τη的輸出電壓為V2。 ,、人第3(b)圖係以1區的等效電路顯示第吖圖所 示的共振電路。此等效電路的顯示是以電屢&與相互誘導 電壓的向量和驅動電容c卜等效電感L^、La2、 以及等效電阻M Ra的串聯電路的電路。在此,等效電感 .La具有U= Lal+La2的關係。逆轉換展置的驅動頻率f盘 共振頻率.⑺—致的共振狀態下,顯示等 效電感U2、等效電阻值以的串聯電路電壓v以及相互誘 導電壓V12,Mh的向量和所驅動的電路。即,以第3⑷ 圖的向量圖顯示時’電晶體τ,出電厂η為等效電感 U2及等效電阻值以構成的向量電壓Vi、以及相互誘導電 壓v12的向量和,也成為電壓Ra.n與電壓(他^La2.S 8 201223339 causes the heating element to generate heat by generating a high-frequency magnetic flux, a thirst current, flowing into a common heating element (for example, carbonaceous ink) (Fig. 2). Further, the induction heating device i 控制 is controlled so that the current phases and frequencies of all the induction heating coils 2 〇, 21, ..., 25 are reduced to reduce the mutual induced electric burglar effect caused by the adjacent induced heating coils. The current phases of the control induction heating coils 2〇, 21, ..., 25 are the same, and the magnetic field does not cause a phase difference. The magnetic field near the boundary of the induction heating coil is not weakened, and the heat generation density generated by the induced heating power does not decrease. As a result, temperature unevenness does not occur on the surface of the object to be heated. Further, the inverse conversion means 30, 31, ..., 35 increase the drive frequency in order to reduce the switching loss, and the equivalent inductance of the induction heating coils 2, 21, ..., 25 and the resonance frequency of the capacitance of the capacitor C connected in series High, driven in resonant current phase delay mode. Next, the object to be heated will be described using Fig. 2 . Fig. 2 is a diagram showing the structure of an RTA (Rapid Thermal Tempering) device using heat treatment of a wafer. The RAT device has embedded heat-inducing heating coils 2, 21, ..., a heat-resistant plate supported in the concave portion, a common heat generating body provided on the surface of the heat-resistant plate, an inverse conversion device (Fig. 1), and a step-down chopper 1 The zc丨Η inverter constituted by the 〇 constitutes a plurality of induction heating coils 20' 21, ..., 25, and heats up the heating element in a plurality of regions (for example, 6 regions). In the configuration of the RTA apparatus, the generator induces the respective high-frequency magnetic fluxes of the heating coils 20, 21, ..., 25, and the high-frequency magnetic flux, for example, an eddy current flows into the heating element formed by the carbon graphite, and the resistance component of the carbon graphite flows according to the eddy current. The fever body is hot. In other words, the rTa can be used to generate the high-frequency electromagnetic energy of the induction heating coils 20, 21, ..., 25, by the electromagnetic month b, the heating element generates heat, and the heating element is heated by the heat of the heating element. The glass base of the object, a ^ board day yen. Further, in the heat treatment of the semiconductor, this heating is carried out under reduced pressure air. Considering the induced heating coils 20 and 21 adjacent to each other, the vibration circuit of the third (a) diagram is considered. That is, the induction components of the equivalent inductance U Lb and the resistance components of the equivalent resistance values Ra and Rb are induced in the heating coils 2G and 21, and the voltages ^1 and ^2 are applied via the Rayker packages P 0 1 and 〇2'. Further, the induction heating coils 2, 21' are adjacent to each other to induce electric 5M (M1) bonding. Here, the equivalent resistance values Ra and Rb are used to induce the heating coil 2. The high-frequency magnetic flux flows the eddy current of the equivalent resistance of carbon graphite. Further, the current flowing into the induction heating coil 2 of the region 1 is 11, and the insulating transistor Tr. The output voltage is in the V" region 2 to induce the inflow of the heating coil 21: the current is "' and the output voltage of the insulating transistor Τη is V2. , Person's 3rd (b) diagram shows the resonant circuit shown in the figure in the equivalent circuit of the 1st zone. The display of this equivalent circuit is a circuit of a series circuit of an electric current & and a mutually induced voltage vector and a driving capacitor c equivalent inductance L^, La2, and an equivalent resistance M Ra . Here, the equivalent inductance .La has a relationship of U = Lal + La2. Inverted conversion of the driving frequency f disk resonance frequency. (7) - In the resonance state, the equivalent inductance U2, the equivalent circuit resistance of the series circuit voltage v and the mutual induced voltage V12, Mh vector and the driven circuit . That is, when the vector diagram of the third (4) diagram is displayed, the transistor τ, the vector voltage Vi at which the power plant η is the equivalent inductance U2 and the equivalent resistance value, and the vector sum of the mutual induced voltage v12 also become the voltage Ra. .n and voltage (he ^La2.

S 201223339 II)的向量和。 又’第1圖中,鄰接的誘導加熱線圈20、21,···,25之 間’雖以相互誘導電感Ml、M2…M5結合,但為了降低此結 合的影響’也常連接逆結合電感(-Me)。此逆結合電感(_Mc) 例如在電感在〇. 5仁Η(微亨利)以下,可以得到1轉或鐵心 貫通產生的此電感。 降壓截波器10係DC/DC轉換器,具有電解電容器46、 電谷器4 7、IG Β Τ (絕緣閘雙極電晶體)q 1、q 2、以及轉流二 才體D1 D 2、截波線圈c Η,運作控制未圖示的商用電源產 生的整流.平滑的直流高壓電Vmax成為既定的低壓直流電 I Vdc此日τ,降壓截波器10輸出如逆轉換裝置go、 31 ’…’ 35轉換的矩形波電壓(高頻電壓)的電壓幅最大值為 既疋值以上的低壓直流電壓Vdc。此既定值,冑由電壓幅 在既定值以上大輸出的逆轉換裝置,設^流人誘導加熱線 圈20 2丨’ .··’ 25的線圈電流的零交叉時序比驅動電壓的上 升時序延遲,而藉由電㈣在未達既定值的小輸出的逆轉 、:f °""《線圈電流的零交又時序比驅動電Μ的上升時 序提前。此時小輸出的逆轉換裝置中雖發生儲存損失,作 因為是小輸出,切換損失少且電渴電麗也小。 為直塵幅的既定值,例如設定成低壓直流電壓Vdc 為直桃阿壓電Vm 的最大輸出電懕^降壓截波器10 控制成95%運作,迴避瞬間的短路狀能 充電整流二: 電解電容器46的正極與負極之間 ”巧的直流高壓電Vmax,連接I(JBTQ1的集極 201223339 與IGBTQ2的射極,截波線圈Ch的一端連接至此連接點p, 另一端連接至電容器47的一端。又’電容器47的另一端, 連接至IGBTQ1的集極以及電解電容器46的正極。又,電 解電容器46的負極連接IGBTQ2的射極。 其次,說明降壓截波器1 〇的動作。 控制電路1 5經由施加閘極矩形波電壓,交互導通.斷 開控制IGBTQ1、Q2。首先,IGBTQ1斷開,IGBTQ2導通時, 經由截波線圈CH,開始電容器47的充電。於是,其次, IGBTQ1導通’ IGBTQ2斷開時’流入截波線圈ch的電流經 由轉流二極體D1放電。藉由以既定的運作比重複此充放 電,電容器47的兩端電壓收歛至由直流高壓電Vmax與運 作比所決定的低壓直流電壓Vdc。 逆轉換裝置30、31,…,35’分別具有切換電容5| 47 兩端的低壓直流電壓Vdc的複數反相器電路、絕緣電晶體 Τη、Trr..Tr5、以及電容器40、41…45,從共通的低壓直 流電壓Vdc產生矩形波電壓(高頻電壓),係流動高頻電流 的驅動電路。在此’絕緣電晶體Tr。、TrK..Trs的二次側連 接誘導加熱線圈20、21…25以及電容器40、41 .·. 45的各 串聯電路。反相器電路具有IGBTQ3、Q4、Q5、Q6、以及與 Q3、Q4、Q5、Q6的各臂逆並聯連接的轉流二極體如、D4、 D5、D6 ’藉由在閘極施加矩形波電壓,產生相同頻率並控 制為線圈電流同相位的矩形波電壓,並驅動絕緣電晶體 Tr〇、Τη... Tr5 的一次側。 絕緣電晶體Tr。、Τη…Trs係為了與誘導加熱線圈2〇、 201223339 21…2 5及反相器電路互相絕緣而設置,誘導加熱線圈2 0 ' 21…25之間互相絕緣。又’絕緣電晶體Tr()、Τη…Tr5的一 次側電壓與二次側電壓係同一波形,輸出矩形波電壓。又, 一次側電流與二次側電流為同一波形。 電容器40、41…45,與誘導加熱線圈20、21…25共 振’電容為C ’等效電感為Lai、Lbl…Lei時,反相器的 驅動頻率ί與共振頻率l/(2;r,(Lal . C))、1/(2ττ, (Lbl . C))…1/(2 π (Lcl · 〇)大致上一致,絕緣電晶體 Tr〇、Τη…Trs的輸出,流過基本波電壓Vi、V2、v3、V |、Vs 除以等效電感La2、Lb2…Le2以及等效電阻值R〇、ri…R5 的串聯阻抗之值的正弦波電流。由於等效電感La2、Lb2 .·. Le2及等效電阻值r〇、R1…R5為誘導負載,正弦波電流比 基本波電壓的相位延遲,基本波電壓的頻率愈高愈增加相 位延遲。又,由於高頻波電流不為共振狀態,幾乎不流。 又’由於歪波電壓電流的有效電力Peff不流高頻波電 流,基本波電壓為V1、基本波電流為丨丨、基本波電壓Η 與基本波電流Π的相位差為θ 1時,顯示為S 201223339 II) The sum of vectors. In the first drawing, the adjacent induction heating coils 20, 21, ..., 25 are combined with each other to induce inductances M1, M2, ..., M5, but in order to reduce the influence of the combination, the reverse combination inductance is often connected. (-Me). This inverse combined inductance (_Mc), for example, is obtained by the inductance of 〇.5仁Η(微亨利), which can be obtained by 1 turn or core penetration. The buck chopper 10 is a DC/DC converter having an electrolytic capacitor 46, an electric grid 47, an IG Β Τ (insulated gate bipolar transistor) q 1 , q 2, and a diverted binary D1 D 2 The chopper coil c Η is operated to control rectification by a commercial power source (not shown). The smooth DC high voltage Vmax becomes a predetermined low voltage direct current I Vdc on the day τ, and the buck chopper 10 outputs such as an inverse conversion device go, The maximum voltage amplitude of the rectangular wave voltage (high-frequency voltage) converted by 31 '...' 35 is a low-voltage DC voltage Vdc equal to or greater than the threshold value. The predetermined value is an inverse conversion device in which the voltage amplitude is greater than or equal to a predetermined value, and the zero-crossing timing of the coil current of the current-induced heating coil 20 2 丨 ' . . . 25 is delayed from the rising timing of the driving voltage. And by electricity (4) in the reversal of the small output that does not reach the predetermined value, :f °"" "the zero current of the coil current and the timing is earlier than the rising timing of the driving power. At this time, although the storage loss occurs in the inverse conversion device of the small output, since it is a small output, the switching loss is small and the electric thirst is small. For the set value of the straight dust amplitude, for example, the maximum output voltage of the low voltage DC voltage Vdc is the straightening voltage of the straight peach Vm, and the step-down filter 10 is controlled to operate at 95%, and the short-circuit energy charging rectification of the avoidance moment is two: The DC high voltage Vmax between the positive electrode and the negative electrode of the electrolytic capacitor 46 is connected to I (the collector 201222339 of JBTQ1 and the emitter of IGBT Q2, one end of the chopper coil Ch is connected to this connection point p, and the other end is connected to the capacitor 47. Further, the other end of the capacitor 47 is connected to the collector of the IGBT Q1 and the anode of the electrolytic capacitor 46. Further, the cathode of the electrolytic capacitor 46 is connected to the emitter of the IGBT Q2. Next, the operation of the step-down chopper 1 说明 will be described. The control circuit 15 is alternately turned on by applying a gate rectangular wave voltage. The IGBTs Q1 and Q2 are turned off. First, the IGBT Q1 is turned off, and when the IGBT Q2 is turned on, the capacitor 47 is charged via the cut coil CH. Then, the IGBT Q1 is turned on. When the IGBT Q2 is turned off, the current flowing into the chopper coil ch is discharged via the commutating diode D1. By repeating this charging and discharging at a predetermined operational ratio, the voltage across the capacitor 47 converges to a straight line. The high voltage Vmax and the operating ratio are determined by the low voltage DC voltage Vdc. The inverse conversion devices 30, 31, ..., 35' respectively have a complex inverter circuit for switching the low voltage DC voltage Vdc across the capacitor 5|47, and an insulating transistor Τη. , Trr..Tr5, and capacitors 40, 41...45, generate a rectangular wave voltage (high-frequency voltage) from a common low-voltage DC voltage Vdc, and are a driving circuit for flowing a high-frequency current. Here, 'insulated transistor Tr., TrK The secondary side of the .Trs connection induces the series circuits of the heating coils 20, 21...25 and the capacitors 40, 41 . . . 45. The inverter circuit has IGBTs Q3, Q4, Q5, Q6, and with Q3, Q4, Q5. The commutating diodes of the Q6 are connected in anti-parallel, such as D4, D5, and D6', by applying a rectangular wave voltage to the gate, generating the same frequency and controlling the rectangular wave voltage of the same phase of the coil current, and driving the insulation. The primary side of the transistor Tr〇, Τη...Tr5. The insulating transistor Tr., Τη...Trs is provided to insulate the heating coil 2〇, 201223339 21...25 and the inverter circuit from each other, and the heating coil is induced. 2 0 '21...25 is insulated from each other Further, the primary side voltages of the 'insulating transistors Tr(), Τη...Tr5 are the same as the secondary side voltage, and the rectangular wave voltage is output. Further, the primary side current and the secondary side current have the same waveform. Capacitors 40, 41...45 Resonating with the induced heating coils 20, 21...25 'The capacitance is C' The equivalent inductance is Lai, Lbl...Lei, the driving frequency of the inverter ί and the resonant frequency l/(2; r, (Lal . C)) 1/(2ττ, (Lbl . C))...1/1(2 π (Lcl · 〇) is substantially uniform, and the output of the insulating transistor Tr〇, Τη...Trs flows through the fundamental wave voltage Vi, V2, v3, V |, Vs divided by the equivalent inductance La2, Lb2...Le2 and the sinusoidal current of the value of the series resistance of the equivalent resistance values R〇, ri...R5. Since the equivalent inductances La2, Lb2 . . . Le2 and the equivalent resistance values r 〇, R1 ... R5 are induced loads, the sine wave current is delayed from the phase of the fundamental wave voltage, and the higher the frequency of the fundamental wave voltage, the more the phase delay is increased. Further, since the high-frequency wave current is not in the resonance state, it hardly flows. Further, since the effective power Peff of the chopping voltage and current does not flow in the high-frequency wave, and the fundamental wave voltage is V1, the fundamental wave current is 丨丨, and the phase difference between the fundamental wave voltage Η and the fundamental wave current 为 is θ 1 , it is displayed as

Pef f= VI · Π . cos θ 1。 因此,歪波電壓’以矩形波電壓驅動lcr的串聯共振 電路時的有效電力Peff,以基本波的有效電力顯示。' 如第4圖所示,控制電路丨5具有脈衝幅控制部9工、 異常停止部92、相位差判斷部93、以及直流電壓控制部 94脈衝幅控制部91產生施加於逆轉換裝置30的igbt如 Q4、卯、Q6閘極的矩形波電壓,直流電壓控制部94產生 13 201223339 輸入至降壓截波器10的IGBTQ1、Q2閘極的矩形波電壓。 相位差判斷部93使用ντ(變壓器),觀測逆轉換裝置 3〇產生的矩形波電壓的波形,同時使用CT(變流器),觀測 線圈電流的波形’判斷是否是這些波形的相位延遲模式。 即,如果線圈電流從負到正零交又的零交又時序比矩形波 電壓的上升時序延遲的話,相位差判斷部93判斷為相位延 遲杈式,零交又時序比上升時序提前的話,判斷為相位提 前模式。於是,相位差判斷部93輸出判斷結果至脈衝幅控 制部91、直流電壓控制部94以及後述的異常停止部92。 脈衝幅控制部91控制與矩形波電壓基本波的零交又 時序的相位差Θ (第5圖),使流入各誘導加熱線圈2〇、21一 25的線圈電流相位(零交叉時序)一致,同時控制脈衝幅及 頻率,使流入上述串聯電路的線圈電流的零交叉時序比矩 形波電壓的上升時序延遲。此時,此脈衝幅控制矩形波電 壓基本波的零交叉時序與矩形波電壓的上升時序間差量的 控制角δ (第5圖)而可以改變。 使用第5圖的電壓電流波形圖,說明脈衝幅控制部g】 的動作。 第5圖係顯示矩形波電壓波形、其基本波基本波與線 圈電WlL波形,縱軸係電壓.電流,橫轴係相位(ω _^ )。電晶 體Tr二次側的矩形波電壓波形5〇係以實線顯示的正負對 稱的奇函數波形’而其基本波顯示為虛線的基本波電壓波 形51。矩形波電壓波形50的最大振幅為±Vdc,對基本波 電壓波形51的零交叉點,設定控制角&的相位角。即,矩Pef f = VI · Π . cos θ 1. Therefore, the effective power Peff when the chopper voltage ' drives the series resonant circuit of lcr with the rectangular wave voltage is displayed as the effective power of the fundamental wave. As shown in FIG. 4, the control circuit 丨5 includes a pulse width control unit 9, an abnormal stop unit 92, a phase difference determination unit 93, and a DC voltage control unit 94. The pulse width control unit 91 generates an application to the inverse conversion device 30. The igbt is a rectangular wave voltage of the Q4, 卯, and Q6 gates, and the DC voltage control unit 94 generates a rectangular wave voltage of 13 201223339 input to the gates of the IGBTs Q1 and Q2 of the buck chopper 10. The phase difference determination unit 93 uses ντ (transformer) to observe the waveform of the rectangular wave voltage generated by the inverse conversion device 3, and uses CT (converter) to observe the waveform of the coil current to determine whether or not the phase delay mode of these waveforms is present. In other words, if the coil current is delayed from negative to positive zero and the timing is delayed from the rising timing of the rectangular wave voltage, the phase difference determining unit 93 determines that the phase delay is 杈, and the zero crossing and the timing are advanced earlier than the rising timing. It is the phase advance mode. Then, the phase difference determination unit 93 outputs the determination result to the pulse amplitude control unit 91, the DC voltage control unit 94, and the abnormal stop unit 92 which will be described later. The pulse width control unit 91 controls the phase difference Θ (Fig. 5) of the zero-crossing and the time-series of the fundamental wave of the rectangular wave voltage, and the coil current phases (zero-crossing timing) flowing into the respective induction heating coils 2A and 21-25 are matched. At the same time, the pulse amplitude and frequency are controlled such that the zero crossing timing of the coil current flowing into the series circuit is delayed from the rising timing of the rectangular wave voltage. At this time, the pulse width can be changed by controlling the control angle δ (Fig. 5) of the difference between the zero-crossing timing of the fundamental wave of the rectangular wave voltage and the rising timing of the rectangular wave voltage. The operation of the pulse width control unit g] will be described using the voltage-current waveform diagram of Fig. 5. Fig. 5 shows a rectangular wave voltage waveform, a fundamental wave fundamental wave and a coil electric WlL waveform, a vertical axis voltage, a current, and a horizontal axis phase (ω _^ ). The rectangular wave voltage waveform 5 on the secondary side of the electric crystal Tr is an odd-function symmetric waveform ′ shown by a solid line and its fundamental wave is shown as a basic wave voltage waveform 51 of a broken line. The maximum amplitude of the rectangular wave voltage waveform 50 is ±Vdc, and the phase angle of the control angle & is set to the zero crossing point of the fundamental wave voltage waveform 51. That is, the moment

S 201223339 形波電壓波形5〇@上升時序及下降時序雙方與基本波電 壓波形51的零交又時序之間具有控制角^的相位差。此 時,基本波電壓波形51的振幅為4Vdc/7r . c〇S(5。 又,以虛線顯示的線圈電流波形52係比基本波電壓波 形51的零交叉時序只延遲相位差θ的正弦波。不過,控制 線圈電流波形52,使矩形波電壓波形5〇的控制角δ大, 供給至誘導加熱線圈20、21〜25的有效電力小時零交叉 時序往往比矩形波電壓波形5〇的上升時序提前。 又’脈衝幅控制部91 —面使流人全部的誘導加熱線圈 20、21…25的線圈電流的相位差0 一致,一面改變每一個 誘導加熱線圈的線圈電流振幅。因此,脈衝幅控制部91, 以基本波電壓波形51的零交叉時序為基準改變控制角 占,振幅控制基本波電壓。因此,脈衝幅控制部91,使用 ACT(自動電流調節器),改變控制角占使線圈電流成為既定 值。經由此控制,一面改變投入誘導加線圈的有效電力, 一面減低鄰接的線圈電產生的相互誘導電壓的影響。 例如’對誘導加熱線圈2 〇,施加最長脈衝幅的矩形波 電壓’依據加熱量,對其他的誘導加熱線圈21、22〜25 , 施加較短脈衝幅的矩形波電壓。即’對誘導加熱線圈2〇 , 輸入最大有效電力’對其他的誘導加熱線圈21、22…25, 依據加熱量’輸入較少的有效電力。 此時’縮短矩形波電壓的脈衝幅時,線圈電流的零交 叉時序往往成為比矩形波電壓的上升時序提前的共振電流 相位提前模式。此時,可以增加驅動頻率更延遲線圈電流、 15 201223339 降低直流電壓Vdc減少控制角δ。 又’此矩形波電壓係正負對稱的同一脈衝幅,為了使 矩形波頻率相同,設定為對絕緣電晶體Tr的一次側施加的 電壓瞬間值為零的低階區間前後。又,由於對絕緣電晶體 Tr的一次側施加的電壓係設定為正負對稱的同一脈衝幅, 防止了絕緣電晶體Tr的直流偏磁。 第6圖係共振電流相位延遲模式,丨〇〇%運作時的波形 圖,以及用以顯示電流流動的逆轉換裝置3 〇的電路圖。第 6 (a )圖係控制角(5 = 0,即1 0 0 %運作時的電壓電流波形圖, 第6 (b )圖係用以顯示電流流動的逆轉換裝置3 〇的電路圖。 第6(a)圖中,符號v顯示1〇〇%運作的矩形波電壓波 形’符號i顯示流入誘導加熱線圈的正弦波電流。相對於 矩形波電壓波形v的上升時序,電流波形i的零交又時序 遲延。第6(b)圖中,逆轉換裝置30具有iGBTQ3(TRap) ' Q4(TRan)、Q5(TRbp)、Q6(TRbn)、轉流二極體 j)3(DIap)、 D4(DIan)、D5(DIbp)以及 D6(DIbn)。 電晶體TRap、TRbp的集極與電晶體TRan、TRbn的射 極之間施加低壓直流電壓Vdc。電晶體TRap的射極與電晶 體TRan的集極連接’電晶體TRbp的射極與電晶體TRbn的 集極連接。又,電晶體TRap的射極與電晶體TRan的集極 之間的連接點,以及電晶體TRbp的射極與電晶體TRbn的 集極之間的連接點間,連接等效電感La2的線圈、電容c 的電容器、以及等效電阻值Ra的電阻器的串聯電路。此線 圈、電阻器及電容器的串聯電路係從輸入側所見的電晶體S 201223339 The waveform voltage waveform 5〇@ rising timing and falling timing have a phase difference of control angle ^ between the zero crossing and the timing of the fundamental wave voltage waveform 51. At this time, the amplitude of the fundamental wave voltage waveform 51 is 4 Vdc / 7 r . c 〇 S (5. Further, the coil current waveform 52 shown by a broken line is only a sine wave delayed by the phase difference θ from the zero crossing timing of the fundamental wave voltage waveform 51. However, the coil current waveform 52 is controlled such that the control angle δ of the rectangular wave voltage waveform 5〇 is large, and the effective power supplied to the induction heating coils 20, 21 to 25 is zero. The timing of the zero crossing is often higher than the rising timing of the rectangular wave voltage waveform 5〇. Further, the pulse width control unit 91 changes the coil current amplitude of each of the induction heating coils while matching the phase difference 0 of the coil currents of all the induction heating coils 20, 21, ... of the flow person. The portion 91 changes the control angle by the zero-crossing timing of the fundamental wave voltage waveform 51, and the amplitude controls the fundamental wave voltage. Therefore, the pulse width control unit 91 uses the ACT (automatic current regulator) to change the control angle to occupy the coil current. By this control, the effective electric power of the input induction coil is changed, and the influence of the mutual induced voltage generated by the adjacent coil electric power is reduced. For example, 'for the induction heating coil 2 〇, the rectangular wave voltage to which the longest pulse width is applied' is applied to the other induced heating coils 21, 22 to 25, and a rectangular wave voltage of a shorter pulse width is applied depending on the amount of heating. 2〇, input the maximum effective power 'to the other induced heating coils 21, 22...25, input less effective power according to the heating amount'. At this time, when shortening the pulse amplitude of the rectangular wave voltage, the zero-crossing timing of the coil current is often The resonant current phase advance mode is earlier than the rising timing of the rectangular wave voltage. At this time, the drive frequency can be increased to delay the coil current, and 15 201223339 reduces the DC voltage Vdc to decrease the control angle δ. Further, the rectangular wave voltage is positively and negatively symmetric. In order to make the rectangular wave frequency the same, the pulse width is set to a low-order interval before the instantaneous value of the voltage applied to the primary side of the insulating transistor Tr is zero. Further, the voltage applied to the primary side of the insulating transistor Tr is set to The same pulse width of positive and negative symmetry prevents DC biasing of the insulating transistor Tr. Fig. 6 is a resonant current phase delay mode波形% operation waveform diagram, and circuit diagram of the inverse conversion device 3 用以 for displaying current flow. Figure 6 (a) is the control angle (5 = 0, that is, the voltage and current waveform during 100% operation) Fig. 6(b) is a circuit diagram of the inverse conversion device 3 用以 for displaying current flow. In Fig. 6(a), the symbol v shows a rectangular wave voltage waveform of 1〇〇% operation, and the symbol i indicates inflow induction. The sinusoidal current of the heating coil. The zero crossing of the current waveform i is delayed with respect to the rising timing of the rectangular wave voltage waveform v. In the sixth (b) diagram, the inverse conversion device 30 has iGBTQ3(TRap) 'Q4(TRan) , Q5 (TRbp), Q6 (TRbn), shunt diodes j) 3 (DIap), D4 (DIan), D5 (DIbp), and D6 (DIbn). A low-voltage DC voltage Vdc is applied between the collectors of the transistors TRap and TRbp and the emitters of the transistors TRan and TRbn. The emitter of the transistor TRap is connected to the collector of the transistor TAn. The emitter of the transistor TRbp is connected to the collector of the transistor TRbn. Further, a connection point between the emitter of the transistor TRap and the collector of the transistor TRan, and a connection point between the emitter of the transistor TRbp and the collector of the transistor TRbn are connected to the coil of the equivalent inductance La2, A series circuit of a capacitor of capacitor c and a resistor of equivalent resistance value Ra. The series circuit of the coil, resistor and capacitor is the transistor seen from the input side.

S 16 201223339S 16 201223339

TrO、Trl…的等效電路。 又’電晶體TRap、TRan、TRbp、TRbn的臂,集極與射 極之間分別連接轉流二極體DI ap、DI an、DI bp '及d I bn。 第6(a)圖中,在時刻tal,電晶體TRap、TRbn為〇N(導 通)狀態,流過線圈電流i (ial )。此時,線圈、電阻器及 電谷益的串聯電路成為誘導負載,正弦波電流的零交又時 序比矩形波電壓v的上升時序延遲。 在時刻ta2 ’電晶體TRap、TRbn遷移至OFF(斷開)狀 態,電晶體TRan、TRbp遷移至0N(導通)狀態。因此,與 線圈電流ial同一方向的線圈電流i(ia2)流經二極體 DIan、DIbp。此時,由於電晶體TRap、TRbn的兩端電壓沒 變化’成為零伏特切換。 在時刻ta3,線圈電流ia2零交又,線圈電流i的方 向反轉。反轉的線圈電流i(ia3)流經電晶體TRan、TRbp , 在時刻ta4 = ta0’電晶體TRap、TRbn遷移至〇N(導通)狀態, 電晶體TRan、TRbp遷移至0FF(斷開)狀態。因此,與線圈 電流ia3同一方向的線圈電流ia4流經二極體DIbn Dlap。 在時刻tal,線圈電流ia4零交叉,反轉電流ial流經電 晶體TRap、TRbn。由於線圈電流ia4零交叉的零電流切換, 切換損失很少。 即,此時,時刻ta2的遷移,雖從電晶體TRbn的〇N 狀態遷移到OFF狀態,但二極體DIbn的施加電壓只有從零 到逆偏壓電壓的變化,由於並不是從順偏壓狀態遷移至逆 偏壓狀態,不會發生載子的儲存損失。又,時刻ta3的遷 17 201223339 竣移到電晶體 但順偏壓電流 雖然從二極體DIbp的順偏壓狀態遷移到電The equivalent circuit of TrO, Trl... Further, the arms of the transistors TRap, TRan, TRbp, and TRbn are connected to the commutating diodes DI ap, DI an, DI bp ', and d I bn between the collector and the emitter, respectively. In Fig. 6(a), at the time tal, the transistors TRap and TRbn are in the 〇N (on) state, and the coil current i (ial ) flows. At this time, the series circuit of the coil, the resistor, and the electric valley is induced, and the zero-crossing timing of the sinusoidal current is delayed from the rising timing of the rectangular wave voltage v. At the time ta2', the transistors TRap and TRbn are shifted to the OFF state, and the transistors TRan and TRbp are shifted to the ON (ON) state. Therefore, the coil current i (ia2) in the same direction as the coil current ial flows through the diodes DIan, DIbp. At this time, since the voltages across the transistors TRap and TRbn are not changed, the switching becomes zero volts. At the time ta3, the coil current ia2 is zero-crossed, and the direction of the coil current i is reversed. The inverted coil current i(ia3) flows through the transistors TRan and TRbp, and at time ta4 = ta0', the transistors TRap and TRbn migrate to the 〇N (on) state, and the transistors TRan and TRbp migrate to the 0FF (off) state. . Therefore, the coil current ia4 in the same direction as the coil current ia3 flows through the diode DIbn Dlap. At the time tal, the coil current ia4 is zero-crossed, and the inversion current ial flows through the transistors TRap and TRbn. Due to the zero current switching of the coil current ia4 zero crossing, the switching loss is small. In other words, at this time, the transition of the time ta2 transitions from the 〇N state of the transistor TRbn to the OFF state, but the applied voltage of the diode DIbn changes only from zero to the reverse bias voltage, since it is not biased. The state transitions to the reverse bias state, and no storage loss of the carrier occurs. Also, the time ta3 moves 17 201223339 竣 shift to the transistor but the forward bias current shifts from the biased state of the diode DIbp to the electricity

移也相同, TRbp 的 ON 成為零的零電流切換,不會發生載子的儲存損失。 第7圖係共振電流相位提前模式, 波形圖。第7 (a)圖係縮短電壓幅,未这 式,未達1 0 0 %運作時的 未達100%運作時的電壓 電流波形圖,以及第7(b)圖係顯示閘極電壓的時序圖。第The shift is also the same, the ON of TRbp becomes zero zero current switching, and the storage loss of the carrier does not occur. Figure 7 is the resonant current phase advance mode, waveform diagram. The 7th (a) diagram shortens the voltage amplitude. If this is not the case, the voltage and current waveforms when the operation is less than 100%, and the 7th (b) diagram shows the timing of the gate voltage. Figure. First

圖。第8(a)、(b)圖的電路圖,由於只不同於第6(b)圖的 電流流動’省略構成的說明。第7(a)圖中,線圈電流i的 零交又時耗比矩形波電㈣上升時序提前的共振電流相 位提前模式。矩形波電壓v在時刻tM與時刻tb2之間係 正值’而在時刻tb4與時刻tb5之間係負值。 即,參照第7(b)圖的時序圖’從時刻tb〇到時刻讣】, 只有電晶體TRbn為ON(導通)狀態,從時刻tM到時刻 tb2 ’電晶體TRap、TRbn為⑽(導通)狀態從時刻到 時刻tb4,電晶體TRan、TRbn為0N(導通)狀態,從時刻 讣4到時刻tb5 ’電晶體TRan、TRbp為〇N(導通)狀態以 及從時刻tb5到時刻tb6,電晶體TRan、TRbn4⑽(導通) 即,藉由導通對角方向的電晶體TRap、TRbn或另一對 角方向的電晶體TRbp、TRan,流過線圈電流土,在其他的 期間,下臂的電晶體TRan、TRbn中任一為on(導通)狀態, 藉由其他電晶體為OFF(斷開)狀態,誘導加熱線圈2〇、21一 25不是浮動狀態,而在非通電狀態。 201223339 更具體而言,從時刻tbl到時刻tb2,經由電晶體 T R a p、T R b η,流過線圈電流i b 1 ’從時刻t b 2到時刻t b 3, 經由二極體Dlan及電晶體TRbn流過與線圈電流ibl同一 方向的線圈電流ib2,線圈電流零交又。從時刻tb3到時 刻t b 4 ’經由二極體DI b η及電晶體T R a η,流過逆方向的線 圈電流ib3。從時刻tb4到時刻tb5,經由電晶體TRan、 TRbp流過線圈電流ib4。從時刻tb5到時刻tb6 = tb0,經 由二極體DI an以及電晶體TRbn ’流過線圈電流i b6,線圈 電流i零交叉。 線圈電流i零交叉的時刻tb3 加熱線圈2 0、21…2 5的兩端無電位變化,不發生電力損 失。另一方面,在時刻tb4,電流順方向流入二極體…如 後’由於電晶體TRbp遷移至ON狀態,二極體DIbn遷移至 逆偏壓狀態。因此,二極體Dlbn的儲存時間期間,流過逆 偏壓電流,電晶體TRbp中發生回復損失(儲存損失)。同樣 地,在時刻tbl,由於二極體Dian從順方向偏壓遷移至逆 方向偏壓,電晶體TRap中發生儲存損失。不過,低電壓直 流電壓Vdc低的話’儲存損失的影響很小。 第9圖係共振相位延遲模式,未達1〇〇%運作時的波形 圖。第9(a)圖係電壓幅縮短時的電壓電流波形圖,虛線辱 不矩形波電壓的基本波。此時電流波升》i的零交又時序’广 施加電壓v的上升時序延遲。即,雖不是1〇。%運作,但:匕 是矩形波電壓的脈衝幅寬的情況。第9( ,旦是 閉極電壓時序圖。第1〇(a)、(b)圖係用以顯示=時的 电W流動的 19 201223339 逆轉換裝置30的電路圖。帛1〇(a)、⑻圖的電路圖,由 於只不同於第6⑻圓的電流流動,省略構成的說明。 第(a)圖中攸時刻tcl到時刻^,電晶體、 TRbn為導通狀態,從時刻tc3到時刻悅5,電晶體心、 TRbn為導通狀態,從時刻tc5到時刻化7,電晶體胸、 TRan為導通狀態,從時刻tc7到時刻以9的期間,電晶體 TRan、TRbn為導通狀態。在此,從時刻tc3到時刻旧以 及從時刻tc7到時刻tc9的期間,由於下臂的電晶體* TRbn為導通,誘導加熱線圈兩端電壓為零,不產生偏壓電 壓0 利用第9圖及第l〇(a)(b)圆,說明動作。 從時刻tel到時刻tc2,經由二極體DIbn及DIap,流 過負的正弦波狀的線圈電流icl,在時刻tc2,電流零交 叉。從時刻tb2到時刻tb3的期間,經由電晶體TRap、TRbn, 流過正的正弦波狀的線圈電流ic2。從時刻tc3到時刻 tc5,經由二極體DIan以及電晶體TRbn,流過正的線圈電 流ic3。從時刻tb5到時刻tb6,第10(b)圖中,經由二極 體Dlan以及DIbp’流過正的線圈電流ic4。於是,線圈電 流在時刻tc6零交叉《從時刻tc6到時刻tc7,經由電晶 體TRbp、TRan ’流過負的線圈電流ic5。從時刻tc7到時 刻tel ’經由二極體DIbn以及電晶體TRan,流過線圈電流 ic6。 在此,在時刻tc 1,由於電流只繼續流入二極體d I bn, 成為不發生回復損失的零電壓切換。在時刻tc3的切換 20 201223339 中,流入電晶體TRap的電流流入二極體DIan,由於只有 二極體Dlan從斷開狀態變成導通狀態,不產生回復電流。 在時刻tc5的切換中’流入二極體‘的電流不改變:在 時刻tc7的切換中’由於只有二極體_從斷開狀態變成 導通狀態’不產生回復電流。又,在時刻u2、tc6成為零 電流切換,不產生回復損失。 因此,在任一切換中,二極體不會從導通狀態變成斷 開狀態,不產生回復電流。 異止部92(第4圖),利用相位差判斷部93的判 斷結果,停止驅動各逆轉換裝置3〇、31、32、33、34、%。 具體而言,異常停止部92,當輸入電壓的低壓直流電壓 在既定值以上(例如,直流高壓電Vmax的50%以上),驅動 電壓波形的上升時序比線圈電流的零交叉時序提前時,作 異吊杇止。藉由降低降壓截波器的輸出電壓(低壓直流 電壓Vdc) ’過渡電壓降低,避免破壞IGBT。又,藉由提高 矩形電壓的頻率,成為更感應的運轉,延遲線圈電流的零 交又時序’確保相位延遲狀態。 又,異常停止部92,當線圈電流在既定值以上(例如, 最大電流值的20%以上),相位提前模式時,也作異常停止。 換言之,異常停止部92,在線圈電流未達既定值時,由於 切換父叉很小,即使相位提前模式也不作異常停止。 (變形例) 本發明並不限定於上述的實施例,例如可以是以下種 種的變形。 21 201223339 (1) 上述實施例’雖使用IGBT作為逆轉換裝置的切換 元件,但也可以使用FET、雙極電晶體等的電晶體。 (2) 上述實施例’為了供給直流電力至逆轉換裝置,雖 然使用降低來自直流電壓的電壓的降壓截波器1 〇,但使用 順變換裝置也可以從商用電源產生直流電壓。又,商用電 源中’不只是單相電源’也可以使用三相電源。 (3) 上述實施例中’對於對應全部誘導加熱線圈2〇、 21…25的逆轉換裝置30、31…35,雖然供給共同的低壓直 流電壓Vdc電力,但也可以追加必須最大加熱量的誘導加 熱線圈以及對應此誘導加熱線圈的逆轉換裝置,並對追加 的逆轉換裝置供給直流電壓Vmax的電力,且對逆轉換裝置 30、31、32、…35供給低壓直流電壓vdc電力。 【圖式簡單說明】 [第1圖]係根據本發明第一實施例的誘導加熱裝置的 電路構成圖; [第2圖]係根據本發明第一實施例的誘導加熱裝置的 加熱部剖面圖; [第3圖]係誘導加熱線圈與電容器形成的共振電路及 其等效電路顯不圖,(a)係誘導加熱線圈與電容器形成的共 振電路的2區ZCIH(分區控制感應加熱),⑻為i區的等 效電路,以及(c)為向量圖; [第4圖]係根據本發明第一實施例的誘導加熱裝置中 使用的控制電路構成圖; 、Figure. The circuit diagrams of Figs. 8(a) and (b) are omitted from the description of the configuration in which the flow of current is different from that of Fig. 6(b). In Fig. 7(a), the zero current and the current consumption of the coil current i are earlier than the resonant current phase advance mode of the rectangular wave (four) rising timing. The rectangular wave voltage v is a positive value ' between time tM and time tb2 and a negative value between time tb4 and time tb5. That is, referring to the timing chart 'from time tb to time 讣' in the seventh diagram (b), only the transistor TRbn is in the ON state, and from the time tM to the time tb2, the transistors TRap and TRbn are (10) (conducting). From time to time tb4, the transistors TRan and TRbn are in a 0N (on) state, and from time 讣4 to time tb5 'the transistors TRan and TRbp are in the 〇N (on) state and from the time tb5 to the time tb6, the transistor TRan TRbn4 (10) (conduction), that is, by turning on the transistor TRap, TRbn in the diagonal direction or the transistors TRbp and TRan in the other diagonal direction, the coil current is flowing, and in other periods, the transistor TRan of the lower arm, Any of TRbn is in the on state, and the other transistors are in an OFF state, and the heating coils 2, 21 to 25 are not in a floating state but in a non-energized state. 201223339 More specifically, from the time tbl to the time tb2, the coil current ib 1 ' flows through the transistors TR ap and TR b η from the time tb 2 to the time tb 3, and flows through the diode Dlan and the transistor TRbn. The coil current ib2 in the same direction as the coil current ibl, the coil current is zero-crossed. From the time tb3 to the time t b 4 ', the coil current ib3 in the reverse direction flows through the diode DI b η and the transistor T R a η. From the time tb4 to the time tb5, the coil current ib4 flows through the transistors TRan and TRbp. From the time tb5 to the time tb6 = tb0, the coil current i b6 flows through the diode DI an and the transistor TRbn ', and the coil current i crosses zero. At the time tb3 at which the coil current i is zero-crossed, there is no potential change at both ends of the heating coils 2 0, 21, ... 2 5, and no power loss occurs. On the other hand, at time tb4, the current flows in the direction of the diode in the forward direction. For example, since the transistor TRbp migrates to the ON state, the diode DIbn migrates to the reverse bias state. Therefore, during the storage time of the diode Dlbn, a reverse bias current flows, and a recovery loss (storage loss) occurs in the transistor TRbp. Similarly, at time tb1, since the diode Dian is biased from the forward direction to the reverse direction bias, a loss of storage occurs in the transistor TRap. However, if the low voltage DC voltage Vdc is low, the effect of the storage loss is small. Figure 9 is a waveform diagram of the resonant phase delay mode, which is less than 1% operation. Fig. 9(a) is a diagram showing the voltage and current waveforms when the voltage amplitude is shortened, and the dotted line is not the basic wave of the rectangular wave voltage. At this time, the zero crossing of the current wave rise "i" is delayed by the timing of the rise of the applied voltage v. That is, although it is not 1〇. % operates, but: 匕 is the case of the pulse width of the rectangular wave voltage. The ninth (a) and (b) diagrams are used to display the electric W flow at the time of the circuit diagram of the 2012 20123339 inverse conversion device 30. 帛1〇(a), (8) The circuit diagram of the figure, the flow of the current is different from the sixth (8) circle, and the description of the configuration is omitted. In the figure (a), the time tcl to the time ^, the transistor and the TRbn are turned on, from the time tc3 to the time 5, The transistor core and TRbn are in an on state, and from the time tc5 to the timed state 7, the transistor chest and the TRan are in an on state, and the transistors TRan and TRbn are turned on from the time tc7 to the time point of 9. The time is from the time. During the period from tc3 to the time and from the time tc7 to the time tc9, since the transistor *TRbn of the lower arm is turned on, the voltage across the induction heating coil is zero, and the bias voltage is not generated. 0. Fig. 9 and the first frame (a) (b) Circle, explaining the operation. From the time tel to the time tc2, the negative sinusoidal coil current icl flows through the diodes DIbn and DIap, and the current zero crossing at time tc2. From the time tb2 to the time tb3 During the period, a positive sinusoidal coil is passed through the transistors TRap and TRbn. Ic2. From the time tc3 to the time tc5, the positive coil current ic3 flows through the diode DIan and the transistor TRbn. From the time tb5 to the time tb6, in the figure 10(b), via the diode Dlan and DIbp' The positive coil current ic4 flows. Thus, the coil current zero-crosses at time tc6 "from time tc6 to time tc7, the negative coil current ic5 flows through the transistors TRbp, TRan'. From time tc7 to time tel' via the pole The body DIbn and the transistor TRan flow through the coil current ic 6. Here, at time tc 1, the current continues to flow only into the diode d I bn , and zero voltage switching does not occur in the recovery loss. Switching at time tc3 20 201223339 In the middle, the current flowing into the transistor TRap flows into the diode DIan, and since only the diode Dlan changes from the off state to the on state, no return current is generated. The current flowing into the diode during the switching of the time tc5 does not change: In the switching of the time tc7, "only the diode _ changes from the off state to the on state" does not generate a return current. Further, at the times u2, tc6, the zero current is switched, and no recovery loss occurs. In any of the switching, the diode does not change from the on state to the off state, and no return current is generated. The exclusive portion 92 (Fig. 4) stops driving each of the inverse conversion devices 3 by the determination result of the phase difference determination unit 93. 〇, 31, 32, 33, 34, %. Specifically, the abnormal stop unit 92 drives the voltage waveform when the low-voltage DC voltage of the input voltage is equal to or greater than a predetermined value (for example, 50% or more of the DC high-voltage power Vmax). When the rising timing is earlier than the zero crossing timing of the coil current, the lifting is stopped. By reducing the output voltage of the buck chopper (low voltage DC voltage Vdc), the transition voltage is reduced to avoid damaging the IGBT. Further, by increasing the frequency of the rectangular voltage, it becomes a more inductive operation, and the zero-crossing of the delay coil current and the timing "guarantee the phase delay state. Further, the abnormal stop unit 92 also stops abnormally when the coil current is equal to or higher than a predetermined value (for example, 20% or more of the maximum current value) and the phase advance mode. In other words, when the coil current does not reach a predetermined value, the abnormal stop portion 92 does not abnormally stop even if the switching advance parent mode is small. (Modification) The present invention is not limited to the above-described embodiments, and may be, for example, the following modifications. 21 201223339 (1) Although the above embodiment uses an IGBT as a switching element of an inverse conversion device, a transistor such as an FET or a bipolar transistor may be used. (2) In the above embodiment, the step-down converter 1 降低 for reducing the voltage from the DC voltage is used to supply the DC power to the inverse conversion device. However, the DC voltage can be generated from the commercial power source by using the forward conversion device. Further, in a commercial power source, a "three-phase power source" can be used instead of a single-phase power source. (3) In the above embodiment, the reverse conversion devices 30, 31, ... 35 corresponding to all the induction heating coils 2, 21, ... 25 are supplied with a common low-voltage DC voltage Vdc power, but the induction of the maximum heating amount may be added. The heating coil and the inverse conversion device corresponding to the induction heating coil supply electric power of the DC voltage Vmax to the additional inverse conversion device, and supply the low-voltage DC voltage vdc power to the inverse conversion devices 30, 31, 32, ... 35. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] is a circuit configuration diagram of an induction heating device according to a first embodiment of the present invention; [Fig. 2] is a sectional view of a heating portion of an induction heating device according to a first embodiment of the present invention. [Fig. 3] is a resonance circuit formed by the induction heating coil and the capacitor and its equivalent circuit, (a) is a 2-zone ZCIH (partition control induction heating) that induces a resonant circuit formed by the heating coil and the capacitor, (8) An equivalent circuit of the i region, and (c) is a vector diagram; [Fig. 4] is a diagram of a control circuit used in the induction heating device according to the first embodiment of the present invention;

S 22 201223339 [第5圖]用以說明使用Phase—Shift(相移)控制時的 控制法的波形圖; [第6(a)、(b)圖]共振電流相位延遲模式,運作 (DUTY)時的波形圖,以及顯示電流流動的逆轉換裝置的電 路圖; [第7圖]共振電流相位提前模式,未達1〇〇%運作(ρυτγ) 時的波形圖; [第8 (a )、( b)圖]共振電流相位提前模式,顯示未達 10 0 %運作(D U T Y)時電流流動的逆轉換農置電路圖; [第9圖]共振電流相位延遲模式,未達1 〇運作() 時的波形圖;以及 [第1 0 (a )、( b)圖]共振電流相位延遲模式,顯示未達 100%運作(DUTY)時電流流動的逆轉換裝置的電路圖。 【主要元件符號說明】 10〜降壓截波器; 15〜控制電路; 20 ' 21、22、23、24、25〜誘導加熱線圈; 30、31、32 ' 33、34、35〜逆轉換裝置; 40、41、42、43、44、45〜電容器; 46〜電解電容器; 47〜電容器; 50 ' 60 ' 70、80〜矩形波電壓波形; 51、61、71、81〜基本波電壓波形; 23 201223339 52、62、72、82〜相互誘導電壓波形; 5 3、6 3、7 3、8 3〜線圈電流波形; 91〜脈衝幅控制部; 92〜異常停止部; 93〜相位差判斷部; 94〜直流電壓控制部; 100〜誘導加熱裝置; CH〜截波線圈;S 22 201223339 [Fig. 5] Waveform diagram for explaining the control method when using Phase-Shift control; [6th (a), (b)] Resonance current phase delay mode, operation (DUTY) Waveform diagram of time, and circuit diagram of inverse conversion device showing current flow; [Fig. 7] Waveform diagram of resonant current phase advance mode, less than 1〇〇% operation (ρυτγ); [8th (a), ( b) Figure] Resonant current phase advance mode, showing the reverse-conversion farm circuit diagram of current flow when less than 10% operation (DUTY); [Fig. 9] Resonance current phase delay mode, less than 1 〇 operation () Waveform diagram; and [10th (a), (b) diagram] resonant current phase delay mode, showing the circuit diagram of the reverse conversion device for current flow when the operation is less than 100% (DUTY). [Main component symbol description] 10~ buck chopper; 15~ control circuit; 20 '21, 22, 23, 24, 25~ induction heating coil; 30, 31, 32 ' 33, 34, 35~ inverse conversion device 40, 41, 42, 43, 44, 45~ capacitor; 46~ electrolytic capacitor; 47~ capacitor; 50 '60' 70, 80~ rectangular wave voltage waveform; 51, 61, 71, 81~ basic wave voltage waveform; 23 201223339 52, 62, 72, 82~ mutual induced voltage waveform; 5 3, 6 3, 7 3, 8 3 ~ coil current waveform; 91~ pulse amplitude control unit; 92~ abnormal stop unit; 93~ phase difference judgment unit 94~DC voltage control unit; 100~ induction heating device; CH~Chopping coil;

Cl、C2〜電容器; C1〜電容; C〜電容; D卜 D2、D3(DIap)、D4(DIan)、D5(DIbp)以及 D6(DIbn) 〜轉流二極體; f〜驅動頻率; 11〜基本波電流; i〜線圈電流; I!〜電流; I 2〜電流; i (i a 1)〜線圈電流, i (ia2)〜線圈電流; i b 1〜線圈電流, ib2〜線圈電流; i b 3〜線圈電流, ib4〜線圈電流;Cl, C2~capacitor; C1~capacitor; C~capacitor; Db D2, D3(DIap), D4(DIan), D5(DIbp) and D6(DIbn)~Switching diode; f~drive frequency; 11 ~ basic wave current; i ~ coil current; I! ~ current; I 2 ~ current; i (ia 1) ~ coil current, i (ia2) ~ coil current; ib 1 ~ coil current, ib2 ~ coil current; ib 3 ~ coil current, ib4 ~ coil current;

S 24 201223339 ib6〜線圈電流; icl〜線圈電流; ic4〜線圈電流;S 24 201223339 ib6 ~ coil current; icl ~ coil current; ic4 ~ coil current;

Lai、Lbl." Lei〜等效電感;Lai, Lbl." Lei~ equivalent inductance;

La2、Lb2…Le2〜等效電感; M、Ml、M2、M3、M4、M5〜相互誘導電感; -M c〜逆結合電感;La2, Lb2...Le2~ equivalent inductance; M, Ml, M2, M3, M4, M5~ mutual induction inductance; -M c~ inverse combination inductance;

Ql 、 Q2 、 Q3(TRap) 、 Q4(TRan) 、 Q5(TRbp) 、 Q6(TRbn) 〜IGBT(絕緣閘雙極電晶體(切換元件)); RO、R1…R5〜等效電阻值;Ql, Q2, Q3 (TRap), Q4 (TRan), Q5 (TRbp), Q6 (TRbn) ~ IGBT (insulated gate bipolar transistor (switching element)); RO, R1 ... R5 ~ equivalent resistance value;

Ra、Rb〜等效電阻值;Ra, Rb~ equivalent resistance value;

TrO、Trl、Tr2、Tr3、Tr4、Tr5〜絕緣電晶體; tbl、tb2、tc3、tc4、tc5、tc6〜時刻;TrO, Tr1, Tr2, Tr3, Tr4, Tr5~insulating transistor; tbl, tb2, tc3, tc4, tc5, tc6~ time;

Tr〜電晶體;Tr~ transistor;

Tr。、Τη…Trs〜絕緣電晶體;Tr. , Τη...Trs~ insulated transistor;

Vi、V2、V3、V4、Vs〜基本波電壓; v〜矩形波電壓波形;Vi, V2, V3, V4, Vs~ basic wave voltage; v~ rectangular wave voltage waveform;

Vdc〜低壓直流電壓; 士 Vdc〜最大振幅;Vdc ~ low voltage DC voltage; ± Vdc ~ maximum amplitude;

Vl2〜相互誘導電壓;Vl2~ mutual induction voltage;

Vmax〜直流高壓電; P〜連接點;Vmax ~ DC high voltage; P ~ connection point;

Pef f〜有效電力;Pef f~ effective power;

Ra〜等效電阻值; 25 201223339 0 1〜相位差; β〜相位差;以及 <5〜控制角。Ra~ equivalent resistance value; 25 201223339 0 1~ phase difference; β~phase difference; and <5~ control angle.

Claims (1)

201223339 七、申請專利範圍: 1. 一種誘導加熱裝置,包括: 鄰近配置的複數誘導加熱線圈; 電容器,串聯至各上述誘導加熱線圈; 複數逆轉換裝置,施加從上述直流電壓轉換的高頻電 壓至各上述誘導加熱線圈及上述電容器的串聯電路;以及 控制電路,控制上述複數逆轉換裝置,電壓幅控制上 述冋頻電壓,同時使流入上述複數誘導加熱線圈的線圈電 流相位一致化; 其中,上述複數逆轉換裝置係各上述直流電壓是共通 的。 2. 如申响專利範圍第1項所述的誘導加熱裝置,其中 降低上述直流電壓’使上述複數逆轉換裝置轉換的全部的 高頻電壓的電壓幅最大值在既定值以上。 3. 如申凊專利範圍第丨或2項所述的誘導加熱裝置, 〃中控制上述直流電壓’比施加至上述串聯電路的施加電 壓的上升時序’更延遲流至上述串聯電路的線圈電流從負 到正零交叉的零交又時序。 4. 如申請專利範圍第丨至3項中任一項所述的誘導加 熱裝置,其中上述逆轉換裝置具有各臂與電晶體逆並聯連 接的二極體,以及 上述直流電壓由截流電路或順轉換裝置產生。 5. 如申請專利範圍第丨至4項中任一項所述的誘導加 熱裝置,更包括: 27 201223339 異常停止部,上述線圈電流由負到正零交叉後,上述 高頻電壓上升時’停止上述逆轉換裝置。 6.如申晴專利範圍第!至5項中任一項所述的誘導加 熱裝置,其中上述複數誘導加熱線圈,靠近共同的發熱體; 以及 上述控制電路分別可變控制上述矩形波電壓脈衝幅, 以均一化各上述誘導加熱線圈供給至上述發熱體的電磁 能。 7·—種誘導加熱方法,以誘導加熱裝置實行,包括: 鄰近配置的複數誘導加熱線圈; 電容器’串聯至各上述誘導加熱線圈; 複數逆轉換裝置,施加從上述直流電壓轉換的高頻電 壓至各上述誘導加熱線圈及上述電容器的串聯電路;以及 控制電路’電壓幅控制上述高頻電壓; 其中’上述控制電路控制各上述直流電壓共通的上述 複數逆轉換裝置,使流入上述複數誘導加熱線圈的線圈電 流相位一致化。 8.如申§青專利範圍第7項所述的誘導加熱方法,其中 降低上述直流電壓’使上述複數逆轉換裝置轉換的高頻電 壓的電壓幅最大值為既定值以上。 9·如申請專利範圍第7項所述的誘導加熱方法,其中 控制上述直流電壓,比施加至上述串聯電路的施加電壓的 上升時序,更延遲流至上述串聯電路的電流的零交又時序。 1 〇 _ —種程式’其特徵在於:將如申請專利範圍第7至 S 28 201223339 9項中任一項所述的誘導加熱方法,在上述控制電路的電 腦中實行。 29201223339 VII. Patent application scope: 1. An induction heating device comprising: a plurality of induction heating coils disposed adjacent to each other; a capacitor connected in series to each of the induced heating coils; a complex inverse conversion device applying a high frequency voltage converted from the DC voltage to a series circuit for inducing the heating coil and the capacitor; and a control circuit for controlling the complex inverse conversion device, wherein the voltage amplitude controls the chirp frequency and simultaneously corrects a phase of a coil current flowing into the complex induction heating coil; wherein the plurality The reverse conversion device is common to each of the above DC voltages. 2. The induction heating device according to claim 1, wherein the DC voltage is lowered to cause a maximum value of a voltage amplitude of all of the high-frequency voltages converted by the complex inverse conversion device to be greater than or equal to a predetermined value. 3. The induction heating device according to Item 2 or 2 of the patent application, wherein the dc is controlled to delay the coil current flowing to the series circuit from the rising timing of the applied voltage applied to the series circuit Zero-crossing and timing with negative to positive zero crossing. 4. The induction heating device according to any one of claims 3 to 3, wherein the reverse conversion device has a diode in which each arm is connected in anti-parallel with the transistor, and the DC voltage is blocked by a current-carrying circuit or The conversion device is generated. 5. The induction heating device according to any one of claims 4 to 4, further comprising: 27 201223339 abnormal stop portion, when the coil current is crossed from negative to positive zero, the high frequency voltage rises when the vehicle stops The above inverse conversion device. 6. For example, the scope of Shen Qing patents! The induction heating device according to any one of the items 5, wherein the plurality of induction heating coils are adjacent to a common heating element; and the control circuit variably controls the rectangular wave voltage pulse width to uniformize each of the induced heating coils Electromagnetic energy supplied to the above-described heating element. 7. The induction heating method is performed by the induction heating device, comprising: a plurality of induction heating coils disposed adjacent to each other; a capacitor 'connected to each of the induced heating coils; a complex inverse conversion device applying a high frequency voltage converted from the DC voltage to a series circuit for inducing the heating coil and the capacitor; and a control circuit 'voltage amplitude controlling the high frequency voltage; wherein the control circuit controls the complex inverse conversion means common to the respective DC voltages to flow into the complex induction heating coil The coil current is phase-aligned. 8. The induction heating method according to claim 7, wherein the DC voltage is lowered to cause a maximum value of a voltage amplitude of the high-frequency voltage converted by the complex inverse conversion device to be a predetermined value or more. The induction heating method according to claim 7, wherein the DC voltage is controlled to delay the timing of the current flowing to the series circuit more than the rising timing of the applied voltage applied to the series circuit. The method of inducing heating according to any one of the claims 7 to 28, 2012, 239, 339, is carried out in the computer of the above control circuit. 29
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TWI741211B (en) * 2017-09-06 2021-10-01 瑞士商傑太日煙國際股份有限公司 Induction heating assembly for a vapour generating device and method of charging a vapour generating device

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JP4444076B2 (en) * 2004-11-15 2010-03-31 株式会社東芝 Induction heating cooker
JP5264352B2 (en) * 2008-07-30 2013-08-14 三井造船株式会社 Induction heating method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI741211B (en) * 2017-09-06 2021-10-01 瑞士商傑太日煙國際股份有限公司 Induction heating assembly for a vapour generating device and method of charging a vapour generating device

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