201218442 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種覆晶式LED封裝結構，尤指一種具有較佳 螢光粉激發效果的覆晶式L ED封裝結構。 【先前技術】 [0002] LED產業是近幾年最受矚目的產業之一，發展至今，LED 產品已具有節能、省電、高效率、反應時間快、壽命週 期時間長、且不含汞、具有環保效益等優點，然而通常 LED高功率產品為獲得所需要的亮度與顏色，必須採用不 同顏色的螢光粉來作混合搭配。一般而言，是將這些不 同顏色的螢光粉混入LED的封裝膠内後由LED光線激發。 但由於LED的封裝膠固結後，内部不同顏色的螢光粉顆粒 混雜在一塊，其不同顏色的螢光粉因為不同的波長混雜 將會交互干擾影響，使螢光粉的激發效果降低，而且封 裝膠容易因長期過熱而變黃變質，造成使用壽命降低。 【發明内容】 [0003] 有鑒於此，有必要提供一種增加螢光粉激發效果的覆晶 式LED封裝結構。 [0004] 一種覆晶式LED封裝結構，其包括一基板、一封裝殼體、 兩電極以及一LED晶片。該基板為透明的平板體，包含有 一承載面以及相對該承載面的一螢光粉層。該承載面設 置該封裝殼體以及兩電極。該L E D晶片設置於該兩電極之 間並達成電性連接。該LED晶片的底部具有反射層設置， 使光線向該基板方向投射並穿過該螢光粉層，該螢光粉 層具有分層的塗布層，每一塗布層具有一特定顏色波長 099135432 表單編號A0101 第4頁/共i2頁 0992061934-0 201218442 的螢光粉’不同塗布層有不同顏色波長的螢光粉。 [0005] [0006] [0007] Ο [0008] Ο [0009] 本發明覆晶式LED封裝結構，由於在透明的基板平板體上 設置依序分層塗布的螢光粉層，使LED晶片發光所激發的 螢光粉層不會相互干擾，能防止混合螢光粉所造成的發 光效率降低與壽命縮減的缺點。 【實施方式】 下面將結合附圖對本發明作一具體介紹。 請參閱圖1，所示為本發明覆晶式LED封裝結構的刳視圖 ，該覆晶式LED封裝結構10包括一基板11、一封裝殼體 12、兩電極13以及一LED晶片14。 該基板11為透明的平板體用只使光線_過α該基板丨j包 含有一承載面11 2以及相對該未載面112的一螢光粉層j 6 。該承載面112用以設置該封裝殼體12以及兩電極13。該 基板11採用高透光率材料製作，例如二氧化石夕（Si〇 )、 2 氮化石夕（Si3N4)、類鑽石材料（Diamond-l ike material) 、 鑽石 （Diamond) 、 藍寶石 （Sapphire) ' 多分子材 料（Polymer materials)、石英（Quartz)等。 該封裝殼體12設置在該基板π承載面112的外圍。該封裝 殼體12内部形成一容置腔12a，該基板】】位於該容置腔 12a的一端，從而與該封裝殼體12共同構成一底端封閉的 空腔。該封裝殼體12採用導熱性較佳的材料，例如氮化 鋁（A1N)、矽（Si)、氮化硼（BN)、石墨（c)等。該封裝 殼體12的頂面以及該封裝殼體12的容置腔12a的内側對稱 的設置有兩電極13，且該兩電極13從該基板丨丨的承載面 099135432 表單編號A0101 第5頁/共12頁 0992061934-0 201218442 11 2之兩端以相對方向沿著該容置腔12a内側壁至該容置 腔12a之另一端，用以與外部電性連接。該兩電極13可採 用鋁(A1)、金(Au) '銀(Ag)、銅(Cu)、鎳⑽、氧化 銦錫（I TO)等金屬或金屬氧化物導電材料。 [0010] [0011] 該LED晶片14設置在該基板u承載面112上並位於該容 置腔12a内，同時與该兩電極ι3分別電性連接。該晶 片14的兩減點電性連接在該基板u承載面ιΐ2上的兩電 極13 。亥LEDBa片14的底部具有反射層“ο設置，使光線 反射向著該基板11的方向投射並穿過該螢光粉層16。該 反射層140可以貼合、電鍍、蒸鍍等方式形成該反射層 140材料可以採用金（Au)、鈦（Ti)、鉻（Cr)、銀（Ag)或 鋁（A1)等金屬或其合金材料。 該基板11上的螢光粉層16，藉由該基板n的平板體以薄 膜貼合或是旋塗（coating)方式附著於該基板u表面上 。該螢光粉層16依螢光粉顏色波長的不同分層塗布。每 一塗布層具有一特定顏色波長的螢光粉，不同塗布層有 不同顏色波長的螢光粉。該螢光粉層16依螢光粉顏色波 長的順序塗布構成。該螢光粉層丨6依螢光粉顏色波長由 長波長至短波長順序分層塗布。本實施例中採用紅、綠 、監長波長至短波長順序分層塗布於該基板丨丨表面上。 該螢光粉層16依波長的不同 '依順序分層塗布，使不同 波長螢光粉之間減少波長能量的互相干擾，從而可增加 榮先粉激發的效能。 清參閱圖2，所示為本發明覆晶式led封裝結構另一實施 方式的剖視圖。該覆晶式LED封裝結構20包括一基板21、 099135432 表單編藏A0101 0992061934-0 [0012] 201218442 一封裝殼體22、兩電極23以及一LED晶片24。該覆晶式 LED封裝結構20與上述覆晶式LED封裝結構10基本上相同 ’該基板21承載面214的相對表面上也具有分層設置的螢 光粉層26 ’差異在於該LED晶片24與該封裝殼體22的組 合。本實施例中，該封裝殼體22是配合該LED晶片24的高 度設置’使該LED晶片24與該封裝殼體22的高度為一致， 從而導致該LED晶片24設置在該基板21承載面214上封裝 構成該覆晶式LED封裝結構20的高度縮小至最小範圍。該 LED晶片24底部的反射層140設置使光線集中反射。該螢 光粉層26分層的設置防止激發效果降低，使該覆晶式LED 封裝結構發揮最大的效益。 [0013] &'上，本發明覆晶式LED封裝結構的螢光粉層可防止不同 顏色的螢光粉因為不同的波長混雜交互干擾影響，使螢 光粉的激發提升，並與該LED晶片的覆晶式結構配合，能 有效改善目确LED封裝結構使用上發光效率的問題。 [0014] 〇 應該指出，上述實施例僅為本發明的較佳實施方式，本 ^貝域技術人員還可在本發明精神内做其他變化。這此依 據本發明精神所做的變化，都應包含在本發明所要求保 護的範圍之内。 【圖式簡單說明】 [0015] 圖1係本發明覆晶式LED封裝結構的剖視圖。 [0016] 圖2係本發明覆晶式LED封裝結構另一實施例的剖視圖。 【主要元件符號說明】 [0017] 覆晶式LED封裝結構：1 〇、2〇 099135432 表單編號A0101 第7頁/共12頁 0992061934-0 201218442 [0018] 基板：11、21 [0019] 承載面：11 2、2 1 4 [0020] 封裝殼體：12、22 [0021] 容置腔：12a [0022] 電極：13、23 [0023] LED晶片：14、24 [0024] 反射層：140 [0025] 螢光粉層：16、26 0992061934-0 099135432 表單編號A0101 第8頁/共12頁201218442 VI. Description of the Invention: [Technical Field] The present invention relates to a flip-chip LED package structure, and more particularly to a flip-chip L ED package structure having a better phosphor powder excitation effect. [Prior Art] [0002] The LED industry is one of the most watched industries in recent years. Since its development, LED products have been energy-saving, energy-saving, high-efficiency, fast response time, long life cycle, and contain no mercury. It has the advantages of environmental benefits, but usually LED high-power products must use different colors of phosphor powder for mixing and matching in order to obtain the required brightness and color. In general, these different colors of phosphor powder are mixed into the LED encapsulant and then excited by the LED light. However, due to the consolidation of the LED encapsulant, the phosphor powder particles of different colors are mixed together, and the phosphor powder of different colors will be interfered by different wavelengths, so that the excitation effect of the phosphor powder is reduced, and The encapsulant is prone to yellowing due to long-term overheating, resulting in reduced service life. SUMMARY OF THE INVENTION [0003] In view of the above, it is necessary to provide a flip-chip LED package structure that increases the excitation effect of a phosphor powder. A flip-chip LED package structure includes a substrate, a package housing, two electrodes, and an LED chip. The substrate is a transparent plate body comprising a bearing surface and a phosphor layer opposite the bearing surface. The carrying surface is provided with the package housing and two electrodes. The L E D wafer is disposed between the two electrodes and is electrically connected. The bottom of the LED chip has a reflective layer disposed such that light is projected toward the substrate and passes through the phosphor layer. The phosphor layer has a layered coating layer, and each coating layer has a specific color wavelength of 099135432. A0101 Page 4 / Total i2 page 0992061934-0 201218442 Fluorescent powder 'Different coating layers have phosphors of different color wavelengths. [0009] [0008] [0009] The flip-chip LED package structure of the present invention, the LED wafer is illuminated by providing a layer of phosphor powder layer coated on the transparent substrate plate in sequence The excited phosphor layers do not interfere with each other, and the disadvantages of reduced luminous efficiency and reduced life caused by the mixed phosphor powder can be prevented. [Embodiment] Hereinafter, the present invention will be specifically described with reference to the accompanying drawings. Referring to FIG. 1, a top view of a flip-chip LED package structure according to the present invention is shown. The flip-chip LED package structure 10 includes a substrate 11, a package housing 12, two electrodes 13, and an LED chip 14. The substrate 11 is a transparent flat plate, and the substrate 丨j includes a bearing surface 11 2 and a phosphor layer j 6 opposite to the unloaded surface 112. The bearing surface 112 is used to dispose the package housing 12 and the two electrodes 13 . The substrate 11 is made of a high transmittance material such as SiO2, Si3N4, Diamond-l ike material, Diamond, Sapphire. Polymolecular materials, quartz (Quartz), and the like. The package housing 12 is disposed on the periphery of the substrate π bearing surface 112. An accommodating cavity 12a is formed in the package housing 12, and the substrate is located at one end of the accommodating cavity 12a to form a bottom closed cavity together with the package housing 12. The package case 12 is made of a material having a good thermal conductivity such as aluminum nitride (A1N), bismuth (Si), boron nitride (BN), graphite (c) or the like. The top surface of the package housing 12 and the inner side of the accommodating cavity 12a of the package housing 12 are symmetrically disposed with two electrodes 13 and the two electrodes 13 are from the carrier surface of the substrate 0 099135432 Form No. A0101 Page 5 / A total of 12 pages 0992061934-0 201218442 11 2 are oppositely disposed along the inner side wall of the accommodating cavity 12a to the other end of the accommodating cavity 12a for electrical connection with the outside. The two electrodes 13 may be made of a metal such as aluminum (A1), gold (Au) 'silver (Ag), copper (Cu), nickel (10), or indium tin oxide (I TO) or a metal oxide conductive material. [0011] The LED chip 14 is disposed on the substrate u-bearing surface 112 and located in the accommodating cavity 12a, and is electrically connected to the two electrodes ι3, respectively. The two subtractive points of the wafer 14 are electrically connected to the two electrodes 13 on the substrate u-bearing surface ι2. The bottom of the LED204 is provided with a reflective layer "o" for reflecting light toward the substrate 11 and passing through the phosphor layer 16. The reflective layer 140 can be formed by lamination, plating, evaporation, or the like. The material of the layer 140 may be a metal such as gold (Au), titanium (Ti), chromium (Cr), silver (Ag) or aluminum (A1) or an alloy thereof. The phosphor layer 16 on the substrate 11 is The flat body of the substrate n is attached to the surface of the substrate u by film bonding or coating. The phosphor layer 16 is layer-coated according to the color wavelength of the phosphor powder. Each coating layer has a specific Fluorescent powder of color wavelength, different coating layers have phosphor powder of different color wavelengths. The phosphor powder layer 16 is coated in the order of the wavelength of the phosphor powder. The phosphor layer 丨6 is colored by the wavelength of the phosphor powder. Long-wavelength to short-wavelength sequential layer coating. In this embodiment, red, green, and long-wavelength to short-wavelength sequential coating is applied on the surface of the substrate. The phosphor layer 16 is in accordance with the wavelength. Layered coating to reduce wavelength energy between different wavelengths of phosphor powder Mutual interference, so as to increase the efficiency of the powder-excited excitation. Referring to Figure 2, there is shown a cross-sectional view of another embodiment of the flip-chip LED package structure of the present invention. The flip-chip LED package structure 20 includes a substrate 21, 099135432 Form A0101 0992061934-0 [0012] 201218442 A package housing 22, two electrodes 23 and an LED chip 24. The flip chip LED package structure 20 is substantially identical to the flip chip LED package structure 10 described above. The phosphor powder layer 26' having a layered arrangement on the opposite surface of the bearing surface 214 differs in the combination of the LED chip 24 and the package housing 22. In the present embodiment, the package housing 22 is mated with the LED chip 24. The height setting of the LED chip 24 is the same as the height of the package housing 22, so that the LED chip 24 is disposed on the substrate 21 carrying surface 214, and the height of the packaged LED package structure 20 is reduced to a minimum. The reflective layer 140 at the bottom of the LED chip 24 is arranged to illuminate the light. The layered arrangement of the phosphor layer 26 prevents the excitation effect from being reduced, and the flip-chip LED package structure maximizes the benefit. [0013 On the &', the phosphor layer of the flip-chip LED package structure of the present invention can prevent the phosphor powder of different colors from being affected by the interference interference of different wavelengths, so that the excitation of the phosphor powder is improved, and the LED wafer is The flip-chip structure can effectively improve the problem of the luminous efficiency of the LED package structure. [0014] It should be noted that the above embodiments are only preferred embodiments of the present invention, and the skilled person can also Other variations are possible within the spirit of the invention, and variations that are made in accordance with the spirit of the invention are intended to be included within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [0015] FIG. 1 is a cross-sectional view showing a flip-chip LED package structure of the present invention. 2 is a cross-sectional view showing another embodiment of the flip-chip LED package structure of the present invention. [Main component symbol description] [0017] Flip-chip LED package structure: 1 〇, 2〇099135432 Form No. A0101 Page 7 / Total 12 Page 0992061934-0 201218442 [0018] Substrate: 11, 21 [0019] Bearing surface: 11 2, 2 1 4 [0020] Package housing: 12, 22 [0021] accommodating cavity: 12a [0022] Electrode: 13, 23 [0023] LED wafer: 14, 24 [0024] Reflective layer: 140 [0025] ] Fluorescent powder layer: 16, 26 0992061934-0 099135432 Form number A0101 Page 8 of 12