201215894 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種探針卡，更特定而言，是有關於 一種利用晶圓級製程完成之探針卡結構，可以大幅降低探 針卡的成本。 【先前技術】 探針卡主要目的是將探針卡上的探針與晶片上的焊墊 ㈣)或凸點（bump)直接接觸，引出晶片訊號，再配合周邊 測試儀器與軟體控制達到自動化量測的目的。換言之，探 $卡係為—電子測試系統與待測半導體晶圓間之介面，以 仃晶圓測試。其目的在於提供測試系統與待測晶圓 ㈣徑：利於晶粒於切割與封裝前進行晶圓級 接觸-、驗⑧° —般而言’探針卡包括印刷電路板與 探針:亦Γ::::圓接上觸晶圓 、/應用於曰曰®上之影像感測器測試。 於進行晶圓級測試時，為 信號傳送至半導體‘，，、了㈣5“備所輸出之測試 探針之探針;tr採用收納有複數個具有導電性 半導體曰圓上的曰晶圓級測試中’係利用探針卡制 觸後，輸入測試訊_ 成有數百個至數萬個晶===導體晶圓上形 試時，需花費極長的時間 ^導體晶圓進行測 測試成本的上升。 酼者曰曰粒數目的增加而導致 201215894 半導·a m决上述問題’ f界逐漸採用—次將探針接觸於 試方、上的所有晶粒或是至少-區塊晶粒之晶圓級測 圓之極j此方法中’必須將探針的前端接觸於半導體晶 利於脾二;月、田的電極墊’因此探針前端必需精準對位，以 將探針卡與半導體晶圓上晶粒接觸。 :而’晶圓針測技術隨著半導體製程技術的演變，探 不:在稞晶切割之後未完成封裝前，可測試其品質，避免 由於，現行積體電路成長的微型化，積 ^ Λ越小、功旎越來越強、腳數越來越多，且 :王、、：與頻率的增加等。而傳統的探針卡 的測試已不敷 ，因此’探針卡也需要高密度的探針排列。 =期的探針卡為探針與環氧樹酷 ==十根到數百根探針以手工方式，並依據測 口式的日B片f干墊的位置，而 式相當費時且不方置於探針卡上。此種方 f ^於傳錄針卡之上述缺點，本發明提供一種 ，於習知的結構之探針卡以克服上述缺點。 【發明内容】 有鑑於此，本發明夕士 M 4之主要目的在於提供一種探針卡結 I其係利用晶圓級製程技術以製造探針卡，此探針卡结 構之訊號傳輸路徑短、傳輪速度快。 Η、、口 卡姓構可以^目的在於提供~種探針卡結構，此探針 探^切成Γ與整合到印刷電路板上，以少傳統 201215894 本發明之再一目的在於提供一 性材料可在探針卡檢測待測物的針：結：，其中彈 物之導電接點接觸時==亦:有效地吸收與待測 探針結構所造成的衝擊與破壞。 低外力直接作用於 :此，本發明之又一目的乃在於提 構，係可降低檢測時的接觸作用 二十：、、·。 度，有助於延長探針卡的使用壽命。成的磨知程 構，包括達成目的’本發明所提供之一種探針卡結 心屬相，具有複數個第1 口卜填充材 2電：成：金屬薄膜之上，具有複數個第二開口;、-第 電曰，形成於複數個第二開口之中；一第一介電層， 電/I真：材料層之上，具有複數個第三開口； -第：導 二形成於複數個第三開口之中，搞合第一導電層；一 二電層’形成於第一導電層及金屬薄膜之 開口’-重佈層’形成於複數個第四開口之 層：下，合第-導電層；-保護層，形成於重 曰下:具有複數個第五開口；以及一金屬塾層，形成 、硬數個第五開口之中及保護層之下，耦合重佈層。 μ上述探針卡結構更包括一金屬凸塊，形成於i二金屬 曰之上，一增強層，形成於金屬凸塊之上；一焊 金屬墊層之下；一導線，電性連接焊接凸塊；」彈 形成於其I成於保護層之下；以及一剛性基底’彈性材料 201215894 本發明之探針卡結構不但克服先前技術之缺點，且可 有效增加探針卡之效率及可靠度與壽命，並可大幅降低成 本。 【實施方式】 本發明將配合其較佳實施例與隨附之圖示詳述於下。 應可理解者為本發明中所有之較佳實施例僅為例示之用， 並非用以限制。因此除文中之較佳實施例外，本發明亦可 廣泛地應用在其他實施例中。且本發明並不受限於任何實 修轭例，應以隨附之申請專利範圍及其同等領域而定。 以下，將搭配參照相應之圖式，詳細說明依照本發明 之铋針卡之製造流程。關於本發明新穎概念之更多觀點以 及優點，將在以下的說明提出，並且使熟知或具有此領域 通常知識者可瞭解其内容並且據以實施。 首先，形成一光阻圖案於一金屬薄膜12〇之上， 如第-圖所示。其中金屬薄膜120具有複數個開σ 121a 鲁形成於其上。金屬薄膜120例如為科森銅合金 (C7〇25，C7G26)’科森銅合金的特性為—種高可靠度且高性 能的銅合金，經由溫度處理時，該材料得以變的更有硬度 及強度且導電率及延伸率增加。 接下來’移除部分金屬薄膜12〇以形成一金屬薄膜圖 案122’例如透過一蝕刻製程完成，如第二圖所示。其中 金屬薄膜圖案122仍具有複數個開口 121a形成於立上。 然後，金屬薄膜圖案122附著於一基板123之上，如 第三圖所示，基板123例如為—玻璃基板…填充材料 201215894 卿ng__ 124形成於金屬薄膜㈣i22之 入谩數個開口 121a之中’如第四圖所示。填充削吨 __丨)層m為一介電材料，此介電材料包含作不限定 於··彈性介電材料、感光材料、石夕介電材料、石夕氧烧聚八 物（SINR)、聚亞醯胺（PI)或矽樹脂。 σ 之後’透過-微影製程(曝光/顯影)或蝕刻製程，填充 材料層124之中形成圖案化填充材料層1Q4於金屬薄膜圖 案122之上面及側壁，士口第五圖所示。《中填充材料層刚 具有複數個開口 1〇4a形成於其中，複數個開口 1〇乜位於 金屬薄膜圖案122之上。形成於金屬薄膜圖案122之側壁 上的填充材料層1〇4之側壁（slde wal丨）可以為非垂直側 壁。開口 104a形成於開口 121a之中，開口 1〇乜之大小略 小於開口 121 a之大小。 接下來，於金屬薄膜圖案122之上的複數個開口 1〇牦 中填入金屬材料，以形成一柱狀金屬層125，例如透過一 籲電鍍製程以形成柱狀銅層（Cu pUiar needle)，如第六圖所 示。舉一實施例而言，適當的柱狀金屬層125之長度可以 吸收部分的形變或應力，柱狀金屬層125之上表面與填充 材料層104之上表面約略平齊（相當）。然後，形成一第一 介電層圖案105於柱狀金屬層125之上，如第七圖所示。 /、中複數個開口 105a係透過一微影製程或姓刻製程形成 於第一介電層圖案105之中，複數個開口 105a ^立於柱狀金 屬層125之上，暴露柱狀金屬層125。之後，於複數個開 口 l〇5a中填入金屬材料，以形成一梢端金屬層（tip 7 201215894 stmCtUre)125a於第一介電層圖案1〇5之上，例如透過一電 鍍製程完成梢端鎳/金合金層丨25a，如第八圖所示。柱狀 金屬層125及梢端金屬層125以冓成一導電插塞 導電插塞109為銅/鎳/金合金結構，其上表面與第一介電 層圖案105之上表面約略平齊（相當）。梢端金屬層兄之 形成可以利於當進行CP(charge_pumping)量測時' 得以避 免柱狀金屬層125的扭轉。201215894 VI. Description of the Invention: [Technical Field] The present invention relates to a probe card, and more particularly to a probe card structure completed by a wafer level process, which can greatly reduce the probe card the cost of. [Prior Art] The main purpose of the probe card is to directly contact the probe on the probe card with the pad (4) or bump on the wafer to extract the chip signal, and then use the peripheral test instrument and software control to achieve automation. The purpose of the test. In other words, the probe is the interface between the electronic test system and the semiconductor wafer to be tested for wafer testing. The purpose is to provide the test system and the wafer to be tested (4) diameter: to facilitate wafer-level contact before cutting and packaging - 8 ° - in general - probe card includes printed circuit board and probe: also :::: Touch the wafer, / for image sensor testing on 曰曰®. For wafer level testing, the signal is transmitted to the semiconductor', and (4) 5" probes for the test probes that are output; tr is used to accommodate a plurality of wafers with conductive semiconductors on the wafer level test In the process of using the probe card to make a touch test, the input test signal _ has hundreds to tens of thousands of crystals === on the conductor wafer, it takes a very long time ^ Conductor wafer test cost The rise of the number of 曰曰 曰曰 导致 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 In the method of wafer level measurement, the 'front end of the probe must be in contact with the semiconductor crystal for the spleen; the electrode pad of the moon and the field', so the front end of the probe must be precisely aligned to sandwich the probe with the semiconductor crystal. On the round die contact: and 'wafer pin measurement technology with the evolution of semiconductor process technology, the probe: before the twin crystal cut after the completion of the package, can test its quality, avoid the micro-scale of the current integrated circuit growth ,, 积 ^ Λ smaller, more and more The number of feet is increasing, and: Wang, , and frequency increase. The traditional probe card test is not enough, so the probe card also needs high-density probe arrangement. The needle card is a probe and epoxy tree cool == ten to hundreds of probes by hand, and according to the position of the measuring type of the daily B piece, the method is quite time-consuming and not placed in the probe The present invention provides a probe card of the conventional structure to overcome the above disadvantages. [Invention] In view of this, the present invention is based on the present invention. The main purpose of the invention is to provide a probe card which uses a wafer level process technology to manufacture a probe card. The probe card structure has a short signal transmission path and a fast transfer speed. Η, and the card name can be ^ The purpose is to provide a probe card structure, which is cut into Γ and integrated into a printed circuit board, with less tradition 201215894. A further object of the present invention is to provide a material for detecting a test object in a probe card. Needle: knot: when the conductive contact of the projectile is in contact == also: effectively absorb and treat Impact and damage caused by the probe structure. Low external force acts directly on: Here, another object of the present invention is to improve the contact effect during the detection. Twenty:, , ·. The service life of the probe card, including the aim of the invention, includes a probe card core phase provided by the present invention, and has a plurality of first port filler materials 2 electricity: into: a metal film, Having a plurality of second openings; - a second electrode formed in the plurality of second openings; a first dielectric layer, electrically / I: above the material layer, having a plurality of third openings; - The second electrode is formed in the plurality of third openings to form the first conductive layer; the first and second electrical layers are formed on the first conductive layer and the opening of the metal film 'the redistribution layer' is formed on the layer of the plurality of fourth openings a lower-conducting-conducting layer; a protective layer formed under the retracement: having a plurality of fifth openings; and a metal bismuth layer formed, among the hard fifth openings and under the protective layer, coupled Cloth layer. The probe card structure further comprises a metal bump formed on the i-metal ruthenium, a reinforcing layer formed on the metal bump; under the solder metal underlayer; a wire electrically connected to the solder bump The spring is formed under the protective layer; and a rigid substrate' elastic material 201215894 The probe card structure of the present invention not only overcomes the disadvantages of the prior art, but also effectively increases the efficiency and reliability of the probe card. Life expectancy and significant cost reduction. [Embodiment] The present invention will be described in detail with reference to the preferred embodiments thereof and the accompanying drawings. It should be understood that all of the preferred embodiments of the present invention are intended to be illustrative only and not limiting. Therefore, the invention may be applied to other embodiments in addition to the preferred embodiments described herein. The invention is not limited to any of the modified yoke examples, but is intended to be within the scope of the appended claims and their equivalents. Hereinafter, the manufacturing process of the boring card according to the present invention will be described in detail with reference to the corresponding drawings. Further views and advantages of the novel inventive concept will be set forth in the description which follows, and the <RTIgt; First, a photoresist pattern is formed over a metal film 12A as shown in the first figure. The metal film 120 has a plurality of openings σ 121a formed thereon. The metal thin film 120 is, for example, a Corson copper alloy (C7〇25, C7G26). The characteristics of the Corson copper alloy are a high-reliability and high-performance copper alloy. When the temperature is processed, the material becomes more rigid and Strength and conductivity and elongation increase. Subsequent removal of a portion of the metal film 12A to form a metal film pattern 122' is accomplished, for example, by an etching process, as shown in the second figure. The metal thin film pattern 122 still has a plurality of openings 121a formed on the upper side. Then, the metal thin film pattern 122 is attached to a substrate 123. As shown in the third figure, the substrate 123 is, for example, a glass substrate. The filling material 201215894 is formed in the opening 121a of the metal film (4) i22. As shown in the fourth figure. The filling layer __丨) layer m is a dielectric material, and the dielectric material is not limited to ···elastic dielectric material, photosensitive material, Shixi dielectric material, Shixi oxygen burning poly eight object (SINR) Polyimide (PI) or anthraquinone resin. After the σ-transmission-lithography process (exposure/development) or etching process, the patterned filling material layer 1Q4 is formed on the upper surface and the sidewall of the metal film pattern 122 in the filling material layer 124, as shown in the fifth figure. The middle filling material layer has a plurality of openings 1 〇 4a formed therein, and a plurality of openings 1 〇乜 are located on the metal thin film pattern 122. The side walls (slde wal丨) of the filling material layer 1〇4 formed on the side walls of the metal thin film pattern 122 may be non-vertical side walls. The opening 104a is formed in the opening 121a, and the size of the opening 1 is slightly smaller than the size of the opening 121a. Next, a plurality of openings 1 之上 on the metal thin film pattern 122 are filled with a metal material to form a columnar metal layer 125, for example, through a plating process to form a Cu puar needle. As shown in the sixth figure. In one embodiment, the length of the appropriate columnar metal layer 125 may absorb portions of the deformation or stress, and the upper surface of the columnar metal layer 125 is approximately flush (equivalent) to the upper surface of the filler material layer 104. Then, a first dielectric layer pattern 105 is formed over the columnar metal layer 125 as shown in the seventh figure. /, the plurality of openings 105a are formed in the first dielectric layer pattern 105 through a lithography process or a last name process, and the plurality of openings 105a are formed on the columnar metal layer 125 to expose the columnar metal layer 125. . Then, a plurality of openings l〇5a are filled with a metal material to form a tip metal layer (tip 7 201215894 stmCtUre) 125a over the first dielectric layer pattern 1〇5, for example, through an electroplating process to complete the tip end. The nickel/gold alloy layer 丨25a is as shown in the eighth figure. The columnar metal layer 125 and the tip metal layer 125 are made of a conductive plug conductive plug 109 as a copper/nickel/gold alloy structure, and the upper surface thereof is approximately flush with the upper surface of the first dielectric layer pattern 105 (equivalent) . The formation of the tip metal layer can facilitate the avoidance of the torsion of the columnar metal layer 125 when performing CP (charge_pumping) measurements.
、接下來’移除基板123，留下基板123之上的結構， 如第九圖所示。移除底部之金屬薄膜圖案122而形成一金 屬薄膜108,例如透過一餘刻製程完成，以暴露柱狀金屬 層125之底部’如第十圖所示。導電插塞1〇9之上表面及 底部表面係暴露者，並且位於金屬薄膜1〇8之開口中而貫 穿填充材料層104及第一介電層圖案1〇5。其中柱狀金屬 層125形成於填充材料層1〇4之側壁間之間隙（開口 中’而梢端金屬層1〜形成於第一介電層圖案1〇5之側壁 間’之間隙（開σ 105a)中。利用金屬薄膜1〇8的金屬特性以 及其四周圍的多層彈性介電層⑽、1()3、1()4及ι〇5)的彈 眭，適當的金屬薄膜108之厚度可以自適應結構的曲伸及 偏斜，並且金屬薄膜108可以透過其形變以適應均勻變化 的塾（pad)。 然後，上述結構附著於一基板13〇之上，其中金屬薄 膜結構108朝上而暴露，如第十一圖所示，基板13〇例如 為玻璃基板。形成第二介電層圖案103於柱狀金屬層125 及填充材料層104之上，如第十二圖所示。其中複數個開 8 201215894 口 l〇3a係透過一微影製程或蝕刻製程形成於第二介電層 圖案103之中，複數個開口 1〇3a位於柱狀金屬層1乃之 上。之後，形成一重佈層（redistributi〇n 】ayer，rdl)i〇6(亦 可稱為導電層106)於柱狀金屬層125及第二介電層圖案 1〇3之上、複數個開口 103a之中，如第十三圖所示:” 接下來形成一保濩層102於重佈層1〇6及第二介電 層圖案103之上，如第十四圖所示。保護層1〇2係透過一 微影製程或蝕刻製程以形成，保護層1〇2為一介電材料， 此介電材料包含但不限定於：彈性介電材料、感光材料、 矽介電材料、矽氧烷聚合物（SINR)、聚亞醯胺（ρι)或矽樹 脂。複數個開口 l〇2a形成於保護層1〇2之中，位於重佈層 106之上，以暴露重佈層1〇6。然後，於複數個開口 區域中’形成一金屬墊層（under ball meta卜UBM)107於重 侪層106之上，並延伸至保護層1〇2之側壁及上表面之上， 如第十五圖所示。 之後，移除基板130，留下基板130之上的結構。在 此步驟中，需避免上層保護層1〇2之裂開或剝落問題、柱 狀銅層125上之金層之剝落問題以及於金層上之任何殘膠 (glue residue) ° 接下末’上述結構附著於一基板140之上，其中導電 插塞109(梢端金屬層125a)及第一介電層圖案1〇5朝上而 暴露’如第十六圖所示，基板140例如為一玻璃基板。然 後’形成一金屬凸塊（stud bump)110於梢端金屬層125a之 上，如第十七圖所示。金屬凸塊110例如為透過一電鍍製。 9 201215894 程完成之金凸塊（Au stud bump)11〇。之後，形成一光阻圖 •案141於第一介電層圖案105之上，，並暴露金屬凸塊層 .110，其中複數個開口 141a區域涵蓋整個金屬凸塊層11〇， 如第十八圖所示。 接下來，形成一增強層（reinforcement layer)l 11於金 屬凸塊110及第一介電層圖案1〇5之上，並覆蓋金屬凸塊 11〇,如第十九圖所示。增強層lu例如係透過一塗佈或電 鍍製程完成之金屬層111。然後，移除光阻圖案丨4 i。 _ 上述金屬凸塊110類似於探針（needle tip)或探測端之 設計，其得以確保成功地接觸焊墊而不會發生任何的錯誤 量測。 最後，移除基板140，留下基板14〇之上的結構，如 第二十圖所示，此即完成晶圓級探針卡結構。完成晶圓級 才木針卡製私之後，利用切割製程（sawing pr〇cess)得以形成 符合單一晶片尺寸之探針卡單元。在上述步驟中，需避免 籲上層第一介電層圖案105之裂開或剝落問題、柱狀銅層 上之金層之剝落問題以及於金屬墊層（UBM)丨〇7上之任 殘膠。 ° 如第二十一圖所示，上述晶圓級探針卡結構可以形成 於一彈性材料101之上，其中保護層1〇2形成於彈性材料 101之上，以利於吸收柱狀金屬層125於形變及位移時的 應力。彈性材料101例如為橡膠材料。而彈性材料1 〇 1形 成於一剛性基底（dgidbase)i〇0之上。此外，金屬墊層i〇i 之下可以形成一焊接凸塊112，焊接凸塊丨12連接一導線 201215894 ⑴，以利於電性連接及測試—待測元件。舉 言’導線113高度不超過金屬凸塊層11〇之高度。 優二!針卡存在諸多缺點，本發明之“級探針卡 =於傳統式探針卡’0具有傳統式探針卡無法預期的效 上，者，本發明雖以較佳實例闡明如 特二’ U限疋本發明之精神。在不脫離本發明之 圍内所作之修改與類似的配置，均應包含在下述 構此範圍應覆蓋所有類似修改與類似結 構且應做最寬廣的詮釋。 【圖式簡單說明】 施方+述=Μ及本發明其料徵與優點，#由閱讀實 施方式之内容及其圖式後，將更為明顯： 、 第一圖係根據本發明之形成_ 之截面圖。 /成先阻圖案於-金屬薄膜 圖。第二圖係根據本發明之形成一金屬薄膜圖案之截面 卜」三圖係根據本發明之金屬薄膜圖案附著於-基板之 上之截面圖。 第四圖係根據本發明之一填充 圖案之上之戴面圖。 真充材枓層形成於金屬薄膜 第五圖係根據本發明之开彡占货. 膜圖案之上之戴面I /成弟一介電層圖案於金屬薄 第六圖係根據本發明之开{ 土' /成一杈狀金屬層於金屬薄獏 ο 11 201215894 圖案之上之截面圖。 第七圖係根據本發明之形成—第二介電層圖案於柱狀 金屬層之上之截面圖。 第八圖係根據本發明之形成一梢端金屬層於第二介電 層圖案之上之截面圖。 第九圖係根據本發明夕&认# ^ X月之移除基板之後的結構之截面 第十圖係根據本發明之） .„ _ β之$成一金屬薄膜之戴面圖。 第十一圖係根據本發明 妨， 乃之附者於一基板之截面圖。 第十一圖係根據本發明之犯# # 金f層之上之截面圖。之屯成第三介電層圖案於柱4 第十三圖係根據本發明 之上之截面圖。 形成—重佈層於柱狀金屬』 第十四圖係根據本發明 之截面圖。 形成一保護層於重佈層之j 第十五圖係根據本發明之形七 上之截面圖。 金屬墊層於重佈層之 第十六圖係根據本發明之 ^ 第十七圖係根據本發明之笊一基板之截面圖。 層之上之截面圖。 》成一金屬凸塊於梢端金屬 第十八圖係根據本發明之 層圖案之上之截面圖。 夕—光阻圖案於第二介電 第十九圖係根據本發明之 之上之截面圖。 >成一增強層於金屬凸塊層 c 12 201215894 第二十圖係根據本發明之探針卡結構之截面圖。 第二十一圖係根據本發明之探針卡結構之截面圖。 【主要元件符號說明】 剛性基底100 彈性材料101 保護層102 第一介電層圖案105 第二介電層圖案103 重佈層106 金屬塾層107 金屬薄膜108 導電插塞109 金屬凸塊110 增強層111 焊接凸塊112 導線113 金屬薄膜120 光阻圖案121、141 開口 102a、103a、104a、105a、121a、141a 金屬薄膜圖案122 基板 123、130、140 填充材料層104、124 柱狀金屬層125 梢端金屬層125a 13Next, the substrate 123 is removed, leaving the structure above the substrate 123, as shown in the ninth figure. The metal film pattern 122 at the bottom is removed to form a metal film 108, for example, through a process of etching to expose the bottom of the columnar metal layer 125 as shown in the tenth figure. The upper surface and the bottom surface of the conductive plug 1〇 are exposed, and are located in the opening of the metal film 1〇8 to penetrate the filling material layer 104 and the first dielectric layer pattern 1〇5. The columnar metal layer 125 is formed in a gap between the sidewalls of the filling material layer 1〇4 (the gap between the tip metal layer 1 and the sidewall of the first dielectric layer pattern 1〇5) (open σ) 105a). The thickness of the appropriate metal film 108 is utilized by the metal characteristics of the metal film 1〇8 and the elastic layers of the multilayer elastic dielectric layers (10), 1()3, 1()4, and ι〇5 around it. The curvature and deflection of the structure can be accommodated, and the metal film 108 can be deformed through it to accommodate a uniformly varying pad. Then, the above structure is attached to a substrate 13A, wherein the metal film structure 108 is exposed upward, and as shown in Fig. 11, the substrate 13 is, for example, a glass substrate. A second dielectric layer pattern 103 is formed over the columnar metal layer 125 and the fill material layer 104 as shown in FIG. A plurality of openings 8 201215894 are formed in the second dielectric layer pattern 103 through a lithography process or an etching process, and a plurality of openings 1 〇 3a are located on the columnar metal layer 1 . Thereafter, a redistribution layer (redistributi〇n) ayer, rdl) i〇6 (also referred to as a conductive layer 106) is formed over the columnar metal layer 125 and the second dielectric layer pattern 1〇3, and the plurality of openings 103a are formed. Among them, as shown in the thirteenth figure:" Next, a protective layer 102 is formed over the redistribution layer 1〇6 and the second dielectric layer pattern 103, as shown in Fig. 14. The protective layer 1〇 2 is formed by a lithography process or an etching process, and the protective layer 1〇2 is a dielectric material, including but not limited to: an elastic dielectric material, a photosensitive material, a germanium dielectric material, a germanium oxide. A polymer (SINR), a polyamidene (ρι) or an anthracene resin. A plurality of openings 10a are formed in the protective layer 1〇2 over the redistribution layer 106 to expose the redistribution layer 1〇6. Then, an under ball meta-bundle 107 is formed over the plurality of open regions 106 and extends over the sidewalls and upper surface of the protective layer 1〇2, such as the fifteenth After that, the substrate 130 is removed, leaving the structure above the substrate 130. In this step, it is necessary to avoid the cracking of the upper protective layer 1〇2. The peeling problem, the peeling problem of the gold layer on the columnar copper layer 125, and any glue residue on the gold layer are attached to the substrate 140, wherein the conductive plug 109 (tip) The end metal layer 125a) and the first dielectric layer pattern 1〇5 are exposed upwards. As shown in FIG. 16, the substrate 140 is, for example, a glass substrate. Then, a metal bump is formed to form a tip. Above the terminal metal layer 125a, as shown in Fig. 17. The metal bump 110 is, for example, electroplated. 9 201215894 The completed gold bump (Au stud bump) 11 〇. After that, a photoresist pattern is formed. The film 141 is over the first dielectric layer pattern 105, and exposes the metal bump layer .110, wherein the plurality of openings 141a cover the entire metal bump layer 11〇, as shown in FIG. 18. Next, the formation A reinforcement layer 11 is over the metal bumps 110 and the first dielectric layer pattern 1〇5 and covers the metal bumps 11〇, as shown in FIG. 19. The enhancement layer lu is, for example, transmitted through a The completed metal layer 111 is coated or plated. Then, the photoresist pattern 丨4 i is removed. The metal bump 110 described above is similar to the design of a needle tip or probe end to ensure successful contact with the pad without any erroneous measurement. Finally, the substrate 140 is removed leaving the substrate 14〇 The structure above, as shown in the twentieth figure, completes the wafer-level probe card structure. After the wafer level is completed, the cutting process (sawing pr〇cess) is used to form a single wafer. Size probe card unit. In the above steps, it is necessary to avoid the problem of cracking or peeling of the first dielectric layer pattern 105 of the upper layer, the peeling of the gold layer on the columnar copper layer, and the residual glue on the metal backing layer (UBM) . ° As shown in FIG. 21, the wafer level probe card structure may be formed on an elastic material 101, wherein a protective layer 1〇2 is formed on the elastic material 101 to facilitate absorption of the columnar metal layer 125. Stress during deformation and displacement. The elastic material 101 is, for example, a rubber material. The elastic material 1 〇 1 is formed on a rigid substrate (dgidbase) i 〇 0. In addition, a solder bump 112 may be formed under the metal pad i〇i, and the solder bump 12 is connected to a wire 201215894 (1) to facilitate electrical connection and testing - the component to be tested. It is stated that the height of the wire 113 does not exceed the height of the metal bump layer 11〇. There are many disadvantages in the needle card. The "probe probe card of the present invention has the effect that the conventional probe card '0 has a conventional probe card that cannot be expected, and the present invention is exemplified by a preferred example. The present invention is to be construed as being limited by the scope of the invention, and modifications and similar configurations are intended to cover all modifications and similar structures and should be construed broadly. Brief description of the schema] 方方+述=Μ and the present invention, its advantages and advantages, # will be more apparent after reading the contents of the embodiment and its schema: The first figure is formed according to the invention _ A cross-sectional view of the first metal film pattern according to the present invention, and a cross-sectional view of the metal film pattern according to the present invention attached to the substrate. . The fourth figure is a wearing map on top of a filled pattern in accordance with one of the present invention. The fifth layer of the true filling material layer is formed on the metal film according to the invention. The wearing surface I / Cheng Di - a dielectric layer pattern on the thin metal pattern is in accordance with the invention. {土' / A section of a metal layer on the metal thin 貘 ο 11 201215894 pattern above. The seventh drawing is a cross-sectional view of forming a second dielectric layer pattern over a columnar metal layer in accordance with the present invention. The eighth figure is a cross-sectional view of forming a tip metal layer over a second dielectric layer pattern in accordance with the present invention. The ninth drawing is a cross-sectional view of a structure of a metal film according to the present invention according to the present invention. The eleventh section of the structure after removing the substrate according to the present invention. The drawings are in accordance with the present invention, and are attached to a cross-sectional view of a substrate. The eleventh drawing is a cross-sectional view of the ##金f layer according to the present invention, and the third dielectric layer is patterned on the column. 4th. Fig. 13 is a cross-sectional view according to the present invention. Forming - redistributing layers to columnar metal" Fig. 14 is a cross-sectional view according to the present invention. Forming a protective layer on the redistribution layer. Figure 16 is a cross-sectional view of a substrate according to the present invention. The sixteenth embodiment of the metal underlayer in the redistribution layer is a cross-sectional view of a substrate according to the present invention. A cross-sectional view of a metal bump on a tip metal. Figure 18 is a cross-sectional view of a layer pattern according to the present invention. The eve-resist pattern is in the second dielectric. The upper sectional view. > into a reinforcement layer on the metal bump layer c 12 201215894 21 is a cross-sectional view of a probe card structure according to the present invention. [Main element symbol description] Rigid substrate 100 Elastic material 101 Protective layer 102 First dielectric layer pattern 105 Second dielectric layer pattern 103 redistribution layer 106 metal germanium layer 107 metal film 108 conductive plug 109 metal bump 110 reinforcement layer 111 solder bump 112 wire 113 metal film 120 photoresist pattern 121, 141 openings 102a, 103a, 104a , 105a, 121a, 141a metal thin film pattern 122 substrate 123, 130, 140 filling material layer 104, 124 columnar metal layer 125 tip metal layer 125a 13