201215713 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種應用於長晶爐之供氣裝置，尤指一種 可以有效降低雜質濃度之長晶爐供氣裝置。 【先前技術】 眾所周知，太陽能電池是利用太陽光與材料相互作用直 接產生電力的一種無污染再生能源，尤其太陽能電池在使用 • 中並不會釋放包括二氧化碳在内之任何氣體，明顯可改善生 態環境、解決地球溫室效應的問題。 太陽能電池是將太陽能轉換成電能的裝置，且不需要透 過電解質來傳遞導電離子，而是改採半導體產生PN結來獲得 電位，當半導體受到太陽光的照射時，大量的自由電子伴隨 而生，而此電子的移動又產生了電流，也就是在PN結處產生 電位差。 目前，太陽能電池主要分非晶、單晶及多晶三種；其中， 鲁如第一圖所示，為一種用以製造矽晶體之長晶爐，其主要係 以一供盛裝矽熔湯11的坩堝21為主體，並且於坩堝21外圍 設有侧絕熱層22及上絕熱層23 ’使構成一密封的熱場，並 且於熱場當中設有加熱器24用以對矽金屬進行加熱。 再者，熱場之上絕熱層23處設有一供連接惰性氣體之輸 氣管25,以及數量不等的排氣孔26。使於矽金屬加熱熔融過 程中，配合由輸氣管25輸入預定流速的氣體，藉以產生通過 熱場的氣流，以將容易形成雜質的氧化物排出。 整體長晶爐則可採用降低加熱器24功率使坩堝21内之 201215713 矽熔湯11固化的方式獲得晶體12(鑄造法）’或採用側絕熱 層22上移輻射冷卻使坩堝21内之矽熔湯11固化的方式獲得 晶體12(直接固化系統）。 甚至於，可進一步於坩堝21與底座27之間連接有一支 柱28 ;使得以透過支柱28帶動坩堝21下移至冷區，使坩堝 21内之矽熔湯11固化的方式獲得晶體12(布氏法），或是於 支柱28導入冷卻流體，使坩堝21内之矽熔湯11固化的方式 獲得晶體12(熱交換器法）。 惟’類似習用之長晶爐之供氣裝置當中的輸氣管25僅概 略伸入上絕熱層23下方之熱場中，因此極容易因為輸氣管 25之管口與坩堝21内部矽熔湯11之自由表面（矽熔湯與氣 體之接觸表面）距離過長，致使排出輸氣管25之氣流無法有 效將雜質帶離自由表面’使形成之晶體所含雜質濃度較高， 因而降低晶體品質。 【發明内容】 有鑑於此’本發明即在提供長晶爐一種可以有效降低雜 質濃度，藉以提升晶體品質之供氣裝置，為其主要目的者。 為達上述目的，本發明之供氣裝置係包括有：一相對罩 設於坩堝外圍的絕熱層、一設於絕熱層上的輸氣管，以及若 干設於絕熱層的排氣孔，使得以配合由輸氣管輸入預定埯逮 的氣體，藉以產生通過熱場的氣流，以將容易形成雜質的氣 化物排出；尤其，輸氣管之管口處設有一組可供調整角度之 導流罩，其通過輸氣管之氣流在導流罩之作用下，使熔湯之 自由表面得以同步接受導引氣流之吹拂作用，達到有效降低 201215713 雜質濃度之目的，進而提升晶體之 本發明之長晶爐之供氣敦置係；進二 -調節機構，使得以依照實際操 步f輸心處攻有 由表面高度，而調整輸氣管之相對位置，： = 自 之管口錢_部料之自 u科掌控輸氟管 内，使得以在相同氣靜速^_在預定的間距範圍 之流速，__之雜^：7、，可增加自ί表面氣體201215713 VI. Description of the Invention: [Technical Field] The present invention relates to a gas supply device applied to a crystal growth furnace, and more particularly to a gas furnace furnace gas supply device capable of effectively reducing impurity concentration. [Prior Art] It is well known that solar cells are a kind of pollution-free renewable energy that directly generates electricity by interacting with sunlight and materials. In particular, solar cells do not release any gas including carbon dioxide, which can obviously improve the ecological environment. To solve the problem of the global warming effect. A solar cell is a device that converts solar energy into electrical energy, and does not need to transmit conductive ions through an electrolyte. Instead, a semiconductor is used to generate a PN junction to obtain a potential. When the semiconductor is exposed to sunlight, a large amount of free electrons are accompanied. The movement of this electron generates a current, that is, a potential difference is generated at the PN junction. At present, solar cells are mainly classified into three types: amorphous, single crystal and polycrystalline; among them, Lu, as shown in the first figure, is a crystal growth furnace for making ruthenium crystals, which is mainly used for simmering soup 11 The crucible 21 is a main body, and a side heat insulating layer 22 and an upper heat insulating layer 23' are disposed on the periphery of the crucible 21 to form a sealed thermal field, and a heater 24 is provided in the thermal field for heating the base metal. Further, a heat insulating layer 23 above the heat field is provided with a gas pipe 25 for connecting an inert gas, and a plurality of vent holes 26. In the heating and melting process of the base metal, a gas having a predetermined flow rate is supplied from the gas pipe 25 to generate a gas flow passing through the heat field to discharge the oxide which is easy to form impurities. In the whole crystal growth furnace, the crystal 12 (casting method) can be obtained by reducing the power of the heater 24 to cure the 201215713 矽 molten soup 11 in the crucible 21 or by using the side thermal insulation layer 22 to move the radiant cooling to melt the crucible in the crucible 21. The soup 11 was cured in a manner to obtain a crystal 12 (direct curing system). Further, a post 28 can be further connected between the crucible 21 and the base 27; so that the crucible 21 can be moved down to the cold zone by the support post 28, and the crucible 11 in the crucible 21 can be solidified to obtain the crystal 12 (Brinell). The method 12 is to introduce the crystal 12 (heat exchanger method) in such a manner that the cooling fluid is introduced into the column 28 and the crucible 11 in the crucible 21 is solidified. However, the gas pipe 25 in the gas supply device similar to the conventional crystal growth furnace only protrudes into the heat field below the upper heat insulating layer 23, so that it is extremely easy to melt the soup 11 due to the nozzle of the gas pipe 25 and the inside of the gas pipe. The distance between the free surface (the contact surface of the crucible soup and the gas) is too long, so that the gas flow exiting the gas pipe 25 cannot effectively carry the impurities away from the free surface', so that the crystal formed has a higher concentration of impurities, thereby lowering the crystal quality. SUMMARY OF THE INVENTION In view of the above, the present invention provides a crystal growth furnace with a crystal growth furnace which can effectively reduce the concentration of impurities and thereby improve the quality of the crystal. In order to achieve the above object, the air supply device of the present invention comprises: a heat insulating layer disposed on the outer periphery of the crucible, a gas conveying pipe disposed on the heat insulating layer, and a plurality of exhaust holes disposed in the heat insulating layer, so as to cooperate The gas captured by the gas pipe is input by the gas pipe to generate a gas flow passing through the heat field to discharge the gas which is easy to form impurities; in particular, a set of guide pipes for adjusting the angle is provided at the nozzle of the gas pipe, which passes through The airflow of the gas pipe is under the action of the shroud, so that the free surface of the melt can be synchronously received by the guiding airflow to achieve the purpose of effectively reducing the impurity concentration of 201215713, thereby improving the gas supply of the crystal growth furnace of the present invention. The Duny system; the second-adjustment mechanism, so that the relative position of the gas pipe is adjusted according to the actual operation f, and the relative position of the gas pipe is adjusted:: = Since the pipe mouth money _ the material from the U department control In the inside of the fluorine tube, the flow rate at the same gas velocity ^_ at a predetermined pitch range, __ of the compound: 7, can be increased from the surface gas
面，並加速將雜質帶離自由表面：H速帶離熔场之自由表 【實施方式】 本發明之特點 獲得清楚地瞭解。 可參閱本案圖式及實施例之詳細說明而 本發明主要提供長晶爐—種可以有效降低雜質濃度，藉 以提升晶體品質之供氣裝置，如第二圖所示，本發明之長晶 爐主要係以一供盛裝矽熔湯41的坩堝31為主體，並且於坩堝 31外圍設有絕熱層32，使構成-密封的熱場，並且於熱場當 中設有加熱器37用以對矽金屬進行加熱。 其中，本發明之供氣裝置係包括有：一設於該絕熱層32 上的輸氣管33 ’以及若干設於該絕熱層32的排氣孔34 ;使得 以配合由輸氣管33輸入預定流速的氣體，藉以產生通過熱場 的氣流，以將容易形成雜質的氧化物排出；其特徵在於·· 該輸氣管33之管口處設有一組可供調整角度之導流罩 36 ’用以將通過輸氣管33之氣流朝向輸氣管33之管口周圍引 導，使溶湯41之自由表面得以同步接受導引氣流之吹拂作 用’而加速將雜質帶離自由表面之速率，以有效降低雜質濃 5 201215713 度’藉以提熔湯41冷卻固化後之晶體品質；當然，另於該坩 瑪31上方可進一步設有蓋板39，如第三圖所示，而該蓋板39 上設有預定數量之排氣孔34，而該輸氣管33與該導流罩36之 角度可以介於80〜160度之間，如第二圖及第四圖所示，其中 以150度為最佳。 本發明之供氣裝置所應用之長晶爐，係可以為採用直接 降低加熱器功率使坩堝31内之熔湯41冷卻固化（鑄造法）之長 晶爐’或是以絕熱層32上移輻射冷卻使坩堝31内之熔湯41冷 卻固化（直接固化系統）之長晶爐。 當然’本發明之供氣裝置所應用之長晶爐係可進一步於 堆瑪31底部連接有一支柱38 ;使得以透過支柱帶動坩堝31下 移至冷區’使坩堝31内之熔湯41冷卻固化（布氏法），或是於 支柱導入冷卻流體’使坩堝31内之熔湯41冷卻固化（熱交換器 法)而皆可以利用本發明之供氣裝置有效降低雜質濃度，藉 以提升熔湯41冷卻固化後之晶體42品質。 再者’本發明之供氣裝置係可進一步在該輸氣管33處設 有一用以調節該輸氣管33相對位置之調節機構，該調節機構 ，可以由一軸設於該絕熱層32上的螺旋套筒35為主體，該輸 氣管33之外圍係設有供與該螺旋套筒35相螺接的螺牙區段 33卜使當該輸氣管33與該螺旋套筒35形成相對轉動時，即可 利用螺紅作用調整該輸氣管之相對位置。 古整體長晶爐之供氣裝置即得以依照實際操作時的坩堝31 门度或溶湯41之自由表面高度，調整該輸氣管33之相對位 置以準確掌控輸氣管33之管口與坩堝31内部熔湯41之自由 表面保持在預定的間距範圍内’使得以在相同氣體流速之條 201215713 件下，增加自由表面氣體之流速，能夠將氣化之雜質混合氣 迅速帶離溶湯41之自由表面，並加速將雜質帶離自由表面之 速率。 於實施時，本發明之導流罩36係在其罩體上平均佈設有 若干呈放射線狀配置的執道361，另於各軌道361與該輸氣管 33之間連接有拉桿362，使得以在拉桿362與軌道361之作用 下，使導流罩36與輸氣管33可做80〜160度之間的夾角調整； 抑或是，如第五圖及第六圖所示，設有若干鉸鍊363連接於該 •導流罩36之罩體與該輸氣管33之管體之間，使導流罩36與輸 氣管33可做80〜160度之間的夾角調整，以符合不同氣體流速 之使用需求。 再者，該導流罩36之外圍輪廓形狀與該坩堝31内部輪廓 形狀係可以如呈第七圖所示皆為方形，或是如第八圖所示該 導流罩36之外圍輪廓形狀與該坩堝31内部輪廓形狀皆為圓 形；而且，該導流罩332之外緣與該坩堝31之内緣係保持有一 預定之間距。 • 本發明之供氣裝置主要利用該輸氣管33管口處之導流罩 36設計，使通過輸氣管33之氣流係可在導流罩36之作用下， 使熔湯41之自由表面得以同步接受導引氣流之吹拂作用，達 到有效降低雜質濃度之目的。 由如第九圖所示係為不同輸氣管設計下，造成不同晶體 生長高度所含有之雜質濃度曲線圖，其中，包含有習有輸氣 管设计（實驗組1)，以及輸氣管與導流罩之夾角分別為9〇度 (實驗組2)以及150度（實驗組3)等實驗組別，而於相同晶體高 度下（例如晶體高度為80醒），實驗組丨設計下該晶體約含有 201215713 1 · 6ppma之雜質濃度，該實驗組2設計下該晶體約含有 1 · 25ppma之雜質濃度，而該實驗組3設計下該晶體約含有 1.05ppma之雜質濃度，故本發明之熱場裝置利用該導流罩之 作用，可使熔湯冷卻固化後之晶體内含有較少雜質濃度，而 其中該輸氣管與導流罩之夾角又以15〇度效果較佳。 如上所述，本發明提供長晶爐一較佳可行之供氣裝置， 爰依法提呈發明專利之申請；本發明之技術内容及技術特點 巳揭示如上，然而熟悉本項技術之人士仍可能基於本發明之 揭示而作各種不背離本案發明精神之替換及修飾。因此，本 發明之保護範圍應不限於實施例所揭示者，而應包括各種不 背離本發明之替換及修飾，並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 第一圖係為一習用長晶爐之長晶爐之供氣裝置結構示意 圖。 第二圖係為本發明第一實施例之長晶爐結構剖視圖。 第二圖係為本發明第一實施例中供氣裝置之結構剖視 圖。 第四圖係為本發明第一實施例中導流罩之調整狀態示意 圖。 第五圖係為本發明第二實施例之供氣裝置結構剖視圖。 第六圖係為本發明第二實施例中導流罩之調整狀態示意 圖。 第七圖係為本發明第三實施例中坩堝及導流罩之平面輪 廉示意圖。 201215713 第八圖係為本發明第四實施例中坩堝及導流罩之平面輪 廓示意圖。 第九圖係為不同輸氣管設計下，造成不同晶體生長高度 所含有之雜質濃度曲線圖。 【主要元件符號說明】Surface, and accelerate the removal of impurities away from the free surface: the free surface of the H-speed band from the melting field. [Embodiment] The features of the present invention are clearly understood. Referring to the drawings and the detailed description of the embodiments, the present invention mainly provides a gas crystal furnace, which can effectively reduce the impurity concentration, thereby improving the crystal quality. As shown in the second figure, the crystal growth furnace of the present invention is mainly The main body of the crucible 41 is provided with a crucible 31, and a heat insulating layer 32 is disposed on the periphery of the crucible 31 to form a heat field for sealing, and a heater 37 is provided in the thermal field for the base metal. heating. The air supply device of the present invention includes: a gas pipe 33' disposed on the heat insulating layer 32; and a plurality of exhaust holes 34 disposed in the heat insulating layer 32; so as to cooperate with the gas pipe 33 to input a predetermined flow rate. a gas for generating a gas flow through the heat field to discharge oxides which are easy to form impurities; characterized in that: a tube of the gas pipe 33 is provided with a set of angle-adjustable flow guides 36' for passage The airflow of the gas pipe 33 is directed around the nozzle of the gas pipe 33, so that the free surface of the melt 41 can be synchronously subjected to the blowing action of the pilot gas stream' to accelerate the rate at which the impurities are carried away from the free surface, thereby effectively reducing the impurity concentration 5 201215713 degrees. 'By the crystal quality of the molten soup 41 after cooling and solidifying; of course, a cover plate 39 may be further provided above the gamma 31, as shown in the third figure, and the cover 39 is provided with a predetermined amount of exhaust gas. The hole 34, and the angle of the gas pipe 33 and the shroud 36 may be between 80 and 160 degrees, as shown in the second and fourth figures, wherein 150 degrees is optimal. The crystal growth furnace to which the gas supply device of the present invention is applied may be a crystal growth furnace which directly cools the melting power of the molten metal 41 in the crucible 31 by casting (casting method) or is irradiated upward by the heat insulating layer 32. The crystal growth furnace which cools and solidifies the molten 41 in the crucible 31 (direct curing system). Of course, the crystal growth furnace to which the gas supply device of the present invention is applied may further have a pillar 38 connected to the bottom of the stacker 31; so that the crucible 41 in the crucible 31 is cooled and solidified by driving the crucible 31 downward to the cold zone through the pillar. (Brinell method), or introducing a cooling fluid to the pillars to cool and solidify the melt 41 in the crucible 31 (heat exchanger method), and the gas supply device of the present invention can effectively reduce the impurity concentration, thereby enhancing the melting 41 The quality of the crystal 42 after cooling and solidification. Furthermore, the air supply device of the present invention may further provide an adjusting mechanism for adjusting the relative position of the gas pipe 33 at the gas pipe 33. The adjusting mechanism may be a spiral sleeve provided on the heat insulating layer 32 by a shaft. The cylinder 35 is a main body, and a screw portion 33 for screwing with the spiral sleeve 35 is disposed on the periphery of the gas pipe 33. When the gas pipe 33 and the spiral sleeve 35 are relatively rotated, The relative position of the gas pipe is adjusted by the action of the screw red. The gas supply device of the ancient monolithic furnace can adjust the relative position of the gas pipe 33 according to the 坩埚31 door degree of the actual operation or the free surface height of the dissolved soup 41 to accurately control the inner mouth of the gas pipe 33 and the inner melting of the gas pipe 33. The free surface of the soup 41 is maintained within a predetermined range of spacing' such that by increasing the flow rate of the free surface gas at the same gas flow rate of 201215713, the vaporized impurity mixture can be quickly carried away from the free surface of the dissolved soup 41, and Accelerate the rate at which impurities are carried away from the free surface. In the implementation, the shroud 36 of the present invention has an array of radiantly disposed 361 on the cover body, and a tie rod 362 is connected between each of the rails 361 and the gas pipe 33. Under the action of the tie rod 362 and the rail 361, the air guide cover 36 and the air supply tube 33 can be adjusted at an angle of between 80 and 160 degrees; or, as shown in the fifth and sixth figures, a plurality of hinges 363 are provided. Between the cover of the flow guide 36 and the tube of the gas pipe 33, the flow guide 36 and the gas pipe 33 can be adjusted at an angle of 80 to 160 degrees to meet the requirements of different gas flow rates. . Furthermore, the outer contour shape of the shroud 36 and the inner contour shape of the weir 31 may be square as shown in the seventh figure, or the outer contour shape of the shroud 36 as shown in the eighth figure. The inner contour of the crucible 31 is circular; further, the outer edge of the shroud 332 is maintained at a predetermined distance from the inner edge of the crucible 31. The air supply device of the present invention mainly utilizes the flow guide 36 at the nozzle of the gas pipe 33 so that the air flow through the gas pipe 33 can be synchronized by the flow guide 36 to synchronize the free surface of the melt 41 Accepting the blowing action of the guiding airflow to achieve the purpose of effectively reducing the impurity concentration. According to the ninth figure, it is a different gas pipeline design, which results in impurity concentration curves contained in different crystal growth heights, including the conventional gas pipeline design (experiment group 1), and the gas pipeline and the flow hood. The angles are 9 〇 (experimental group 2) and 150 degrees (experimental group 3) and other experimental groups, and at the same crystal height (for example, the crystal height is 80 awake), the experimental group design contains the crystal containing 201215713 1 · 6ppma impurity concentration, the experimental group 2 design of the crystal contains about 1.25ppma impurity concentration, and the experimental group 3 design of the crystal contains about 1.05ppma impurity concentration, so the thermal field device of the present invention uses The function of the shroud can make the crystal of the melt cooling and solidification contain less impurity concentration, and the angle between the gas pipe and the shroud is preferably 15 degrees. As described above, the present invention provides a preferred gas supply device for a crystal growth furnace, and an application for an invention patent according to the law; the technical contents and technical features of the present invention are disclosed above, but those skilled in the art may still be based on The invention is not to be construed as being limited or modified by the spirit of the invention. Therefore, the scope of the invention should be construed as not limited by the scope of the invention, and the invention should be [Simple description of the drawing] The first figure is a schematic diagram of the structure of the gas supply device of the crystal growth furnace of a conventional crystal growth furnace. The second drawing is a cross-sectional view showing the structure of the crystal growth furnace of the first embodiment of the present invention. The second drawing is a cross-sectional view showing the structure of the air supply device in the first embodiment of the present invention. The fourth figure is a schematic view showing the state of adjustment of the shroud in the first embodiment of the present invention. Figure 5 is a cross-sectional view showing the structure of a gas supply device according to a second embodiment of the present invention. Fig. 6 is a schematic view showing the state of adjustment of the shroud in the second embodiment of the present invention. The seventh figure is a schematic view of the plane wheel of the weir and the shroud in the third embodiment of the present invention. 201215713 The eighth figure is a plan view showing the plane profile of the weir and the shroud in the fourth embodiment of the present invention. The ninth figure is a graph showing the concentration of impurities contained in different crystal growth heights under different gas pipeline designs. [Main component symbol description]
11矽熔湯 331螺牙區段 12晶體 34排氣孔 21坩堝 35螺旋套筒 22側絕熱層 36導流罩 23上絕熱層 361軌道 24加熱器 362拉桿 25輸氣管 363鉸鍊 26排氣孔 37加熱器 27底座 38支柱 28支柱 39蓋板 31坩堝 41熔湯 32絕熱層 33輸氣管 42晶體11矽 molten soup 331 screw section 12 crystal 34 vent 21 坩埚 35 spiral sleeve 22 side insulation layer 36 shroud 23 thermal insulation layer 361 rail 24 heater 362 rod 25 gas pipe 363 hinge 26 vent 37 Heater 27 base 38 pillar 28 pillar 39 cover plate 31坩埚41 melt soup 32 insulation layer 33 gas pipe 42 crystal