201215502 六、發明說明： 【發明所屬之技術領域】 本發明係有關一種導電性透明基材、以及電阻膜方式 觸控面板及靜電容方式觸控面板等觸控面板，該導電性透 明基材係用於觸控面板等，該等觸控面板係使用此導電性 透明基材而形成。 【先前技術】 近年來，筆記型電腦和行動電話等採用觸控面板之情 形增加，而亦越來越顯著需要使觸控面板薄型化、輕量化、 南耐衝擊性。 以往，觸控面板等中所使用之導電性透明基材，一般 而言係以下述方式製造··於聚對苯二甲酸乙二_(ρΕτ)膜= 塑膠膜或聚碳錢等塑膠板之表面，形成非晶形的氧化姻 錫（ΙΤΟ)膜；或於玻璃之表面，拟士 衣匈形成具結晶性的ΙΤΟ膜（例 如··參照專利文獻1)。 [先前技術文獻] (專利文獻） 專利文獻1:日本特開2010-127975號公報 【發明内容】 [發明所欲解決之問題] 故在薄型化、輕量化、高 然而’玻璃由於容易破裂 201215502 耐衝擊性上有極限。 另一方面，塑膠膜（包含塑膠板，以下均同）由於耐故 性和尺寸安定性不足，故無法形成具結晶性的ιτ〇膜。因 此，ΙΤΟ膜之電阻率會增加，但若為了製作成低電阻而增 加ΙΤΟ膜的膜厚，則穿透率會降低。 此外，有下述報告··使.用藉由電漿辅助來進行之離子 鍍覆法之特殊方法’即使為耐熱性低的塑膠膜，仍能夠在 低溫下形成具結晶性的ΙΤ0膜。然而，此方法，除了成本 高且難以適用於泛用材料以外，亦難以大面積化等，有許 多困難點。 此外，於一般的塑膠膜形成有ΙΤΟ膜之導電性透明基 材，當用於大面積的觸控面板時，由於熱膨脹率大，故汀ο 膜容易發生龜裂。Α了進一步製作成大面積化所需的低電 阻膜，而必須增加ITO膜的膜厚，但相反地，會犧牲透明 性。另-方面，^為了獲得透㈣、低電阻性而使用耐熱 性和尺寸安定性高的玻璃，則導電性透明基材整體會變 重’並且容易破裂，故不佳。 本發明係鑒於上述問題點而研創，目的在於提供一種 導電性透明基材、以及觸控面板（電阻膜方式觸控面板及靜 電容方式觸控面板），該導電性透明基材能夠實現薄型化、 輕量化、高财衝擊性、高透明性、低成本化、大面積化， 而能夠較佳地用於觸控面板等，該等觸控面板能夠使用此 導電性透明基材而形成。 [解決問題之技術手段] 201215502 本發明之導電性透明基材，其特徵在於：使透明樹脂 組成物含浸於玻璃纖維的基材中並使其硬化，而形成透明 土材則述透明樹脂組成物之硬化後之玻璃轉移溫度（Tg) 為2〇〇°c以上，於前述透明基材的至少單面，形成電阻率 為2.0X1(nm以下之氧化姻錫膜，錢長55〇⑽之光 之穿透率為80%以上。 在前述導電性透明基材中，較佳是：前述氧化銦錫膜 之電阻率為以⑽〜以下，前述波長55〇 之光之 穿透率為90%以上。 在前述導電性透明基材中，較佳u 15(rc、9〇分 鐘之條件下加熱而進行高溫測試後之薄片電阻的變化率為 20%以下。 在前述導電性透明基材巾，較佳是：在听、濕度^ % RH、240小時之條件下進行恆溫恆濕測試後之薄片電阻 的變化率為20%以下。 在前述導電性透明基材中，鲂 .此 ^ Τ 較佳疋.則述氧化銦錫臈 係由濺鍍法所形成。 ' 熱膨脹率為1 8 ppm以下。 在前述導電性透明基材中，以於透明樹脂組成物中調 配有下述式⑴所示^ 3官能以上的環氧樹脂，來作為折射 率大於玻璃纖維的高折射率樹脂為佳： 201215502201215502 VI. Description of the Invention: [Technical Field] The present invention relates to a conductive transparent substrate, a touch panel such as a resistive film type touch panel and a capacitive touch panel, and the conductive transparent substrate is It is used for a touch panel or the like, and these touch panels are formed using the conductive transparent substrate. [Prior Art] In recent years, the use of touch panels in notebook computers and mobile phones has increased, and there has been a growing demand for thinner, lighter, and more impact resistant touch panels. Conventionally, a conductive transparent substrate used in a touch panel or the like is generally manufactured in the following manner: in a plastic sheet such as a polyethylene terephthalate film or a plastic film. On the surface, an amorphous oxidized samarium oxide film is formed; or on the surface of the glass, it is proposed to form a crystalline ruthenium film (for example, see Patent Document 1). [Prior Art Document] (Patent Document) Patent Document 1: JP-A-2010-127975, SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] Therefore, the thickness is reduced, the weight is high, and the glass is easily broken due to the resistance of 201215502. There are limits on impact. On the other hand, the plastic film (including the plastic sheet, the following is the same) is incapable of forming a crystallized ιτ〇 film due to insufficient durability and dimensional stability. Therefore, the resistivity of the ruthenium film increases, but if the film thickness of the ruthenium film is increased in order to produce a low resistance, the transmittance is lowered. In addition, there is a special method of the ion plating method by plasma assisting, which is capable of forming a crystalline ΙΤ0 film at a low temperature even in a plastic film having low heat resistance. However, this method has many difficulties, in addition to being costly and difficult to apply to general-purpose materials, and it is difficult to increase the area. Further, in the case of a general plastic film, a conductive transparent substrate having a ruthenium film is formed. When used for a large-area touch panel, since the thermal expansion rate is large, the film is liable to be cracked. In order to further form a low-resistance film required for a large area, it is necessary to increase the film thickness of the ITO film, but conversely, the transparency is sacrificed. On the other hand, in order to obtain a high heat resistance and a glass having high dimensional stability in order to obtain (4) and low electrical resistance, the conductive transparent substrate becomes heavy as a whole and is easily broken, which is not preferable. The present invention has been made in view of the above problems, and an object of the invention is to provide a conductive transparent substrate and a touch panel (a resistive touch panel and a capacitive touch panel), which can be made thinner. It is lightweight, high-impact, high-transparency, low-cost, and large-area, and can be preferably used for a touch panel or the like, and the touch panel can be formed using the conductive transparent substrate. [Technical means for solving the problem] 201215502 The conductive transparent substrate of the present invention is characterized in that the transparent resin composition is impregnated into a base material of the glass fiber and hardened, and the transparent resin material is formed into a transparent resin composition. The glass transition temperature (Tg) after hardening is 2 〇〇 ° c or more, and at least one side of the transparent substrate forms an oxidized sulphur film having a resistivity of 2.0×1 (nm or less) and a light length of 55 Å (10). The transmittance is 80% or more. In the conductive transparent substrate, it is preferable that the indium tin oxide film has a resistivity of (10) or less, and a transmittance of light having a wavelength of 55 前述 is 90% or more. In the conductive transparent substrate, it is preferable that the change rate of the sheet resistance after heating at a temperature of 9 sec for 9 minutes is 20% or less. In the conductive transparent substrate, Preferably, the change rate of the sheet resistance after the constant temperature and humidity test under the conditions of listening, humidity, % RH, and 240 hours is 20% or less. In the above conductive transparent substrate, ^. The indium tin oxide system is formed by sputtering The thermal expansion coefficient is 18 ppm or less. In the above-mentioned conductive transparent substrate, an epoxy resin having a refractive index of not more than the following formula (1) is blended in the transparent resin composition, and the refractive index is larger than that of the glass fiber. High refractive index resin is better: 201215502
(I) (式中，R1、R3〜R10表示 價有機基）。 價有機基或氫原子，R2表示2 • M於迓明樹脂缸出札心 配有下述式（II)所示之3官鈐沾p 、A成物中調 夂j吕月^•的環氧樹脂，來作 1玻璃纖維的高折射率樹脂為佳： -折射率大(I) (wherein R1, R3 to R10 represent a valence organic group). Valence organic or hydrogen atom, R2 means 2 • M in the 迓 树脂 resin cylinder out of the heart is equipped with the following formula (II) 3 official 钤 钤 p, A 夂 夂 吕 吕 吕 ^ 的 的 的 epoxy resin It is preferable to use a high refractive index resin of 1 glass fiber: - a large refractive index
(II) 在前述導電性透明基材中，較佳是： 物中調配有氰酸酯樹脂，來作為折射率大 折射率樹脂》 於透明樹脂組成 於破螭纖維的高 本發明之觸控面板，其特徵在於： 明基材作為顯示器而形成。 本發明之電阻膜方式觸控面板，其 述導電性透明基材作為3〇V型以上的顯 本發明之靜電容方式觸控面板，其 述導電性透明基材作為15V型以上的顯 使用前述導電性透 特徵在於：使用前 示器而形成。 特徵在於：使用前 示器而形成。 201215502 [功效] 根據本發明之導電性透明基材，因透明基材係使透明 樹脂組成物含浸於玻璃纖維的基材中並使其硬化而形成， 因此相較於玻璃，更能夠實現薄型化、輕量化、高耐衝擊 性。此外’因透明樹脂組成物之硬化後之玻璃轉移溫度（Tg) 為200°c以上，因此即使不使用特殊方法（例如離子鍍覆 法）’仍能夠形成結晶性高的氧化铟錫膜，而相較於塑穋 膜’更能夠實現低成本化。此外，因形成電阻率為2·0 X 1 0_4 i2cm以下之氧化銦錫膜’因此無須為了獲得低電阻性而增 加氧化銦錫膜的膜厚，並且因波長550 nm之光之穿透率為 80%以上，因此能夠實現高透明性。此外，透明基材係因 較玻璃更輕，因此能夠實現大面積化，並且因相較於塑勝 膜’熱膨脹率更小而尺寸安定性更高，因此氧化麵錫膜不 容易破裂’而能夠實現大面積化。因此，本發明之導電性 透明基材能夠較佳地用於觸控面板等。 【實施方式】 [實施發明的較佳形態] 以下，說明本發明之實施形態。 本發明之導電性透明基材，係於透明基材的至少單面 設置氡化銦錫（ITO)膜而形成。 此處’透明基材’係使透明樹脂組成物含浸於玻璃纖 維的基材中並使其硬化而形成。玻璃纖維的基材能夠使用 201215502 例如玻璃布等。這樣的話，透明基材係因使用玻璃纖維的 基材’而能夠提高彈性，因使用透明樹脂組成物，而能夠 實現輕量化。此外，透明基材為在破璃纖維的基材中保持 有透明樹脂組成物之透明複合材，具體而言，係使透明樹 脂組成物含浸於玻璃纖維的基材中並使其硬化而形成該 透明樹脂組成物能夠以下述方式調製：將折射率大於玻璃 纖維的高折射率樹脂與折射率小於玻璃纖維的低折射率樹 脂混合’並使其折射率近似於玻璃纖維之折射率。 透明樹脂組成物中所調配之高折射率樹脂，較佳是使 用上述式（I)所示之3官能以上的多官能環氧樹脂。 使用上述式（I)所示之3官能以上的多官能環氧樹脂， 即能夠一面維持高透明性，一面玻璃轉移溫度（Tg)高而提 高硬化物之耐熱性，亦能夠進一步抑制因熱而變色。 式（I)中之R2之2價有機基，可舉例如：伸苯基等取代 或未取代之伸芳基；具有取代或未取代之伸芳基與碳原子 或碳鏈鍵結而成之結構之基等。碳原子或碳鏈可舉例如： 甲基亞甲基、二曱基亞甲基等伸烷基；羰基等。 R之2價有機基，較佳是使用伸苯基與式（1)之右側的 環氧丙氧基鍵結而構成環氧丙氧基苯基之基。此外，從抑 制導電性透明基材因熱而變色之觀點來看，較佳是使用在 介置於伸芳基彼此間之碳原子或碳鏈不包含亞甲基卜^Η2_) 者。 R之2價有機基，可舉例如下述結構（中括號内之任一 者）。 201215502(II) In the above-mentioned conductive transparent substrate, it is preferable that a cyanate resin is blended as a refractive index large refractive index resin, and a high-invention touch panel composed of a transparent resin in a broken fiber is used. It is characterized in that the bright substrate is formed as a display. In the resistive film type touch panel of the present invention, the conductive transparent substrate is a three-dimensional V-type or more capacitive touch panel of the present invention, and the conductive transparent substrate is used as a 15V type or more. The conductive permeability is characterized by being formed using a front indicator. It is characterized in that it is formed using a front display. 201215502 [Efficacy] According to the conductive transparent substrate of the present invention, since the transparent substrate is formed by impregnating and curing the transparent resin composition in the base material of the glass fiber, the thickness can be made thinner than that of the glass. Lightweight and high impact resistance. In addition, since the glass transition temperature (Tg) after curing of the transparent resin composition is 200 ° C or more, even if a special method (for example, ion plating method) is not used, a crystallized indium tin oxide film can be formed. Compared with the plastic film, it is more cost-effective. In addition, since an indium tin oxide film having a resistivity of 2·0 X 1 0_4 i2 cm or less is formed, it is not necessary to increase the film thickness of the indium tin oxide film in order to obtain low resistance, and the transmittance of light due to a wavelength of 550 nm is More than 80%, so high transparency can be achieved. In addition, since the transparent substrate is lighter than glass, it can be made to have a large area, and since the thermal expansion coefficient is smaller and the dimensional stability is higher than that of the plastic film, the oxidized tin film is not easily broken. Achieve a large area. Therefore, the conductive transparent substrate of the present invention can be preferably used for a touch panel or the like. [Embodiment] [Best Mode for Carrying Out the Invention] Hereinafter, embodiments of the present invention will be described. The conductive transparent substrate of the present invention is formed by providing an indium tin oxide (ITO) film on at least one side of a transparent substrate. Here, the 'transparent substrate' is formed by impregnating and curing a transparent resin composition in a glass fiber substrate. The glass fiber substrate can be used, for example, 201215502, such as glass cloth. In this case, the transparent substrate can be made elastic by using the base material of the glass fiber, and the transparent resin composition can be used to reduce the weight. Further, the transparent substrate is a transparent composite in which a transparent resin composition is held in a base material of the glass fiber, and specifically, the transparent resin composition is impregnated into a base material of the glass fiber and hardened to form the transparent resin composition. The transparent resin composition can be prepared by mixing a high refractive index resin having a refractive index larger than that of glass fibers with a low refractive index resin having a refractive index smaller than that of glass fibers and making the refractive index approximate to the refractive index of the glass fibers. The high refractive index resin to be blended in the transparent resin composition is preferably a trifunctional or higher polyfunctional epoxy resin represented by the above formula (I). By using the trifunctional or higher polyfunctional epoxy resin represented by the above formula (I), the glass transition temperature (Tg) can be increased while maintaining high transparency, and the heat resistance of the cured product can be improved, and heat resistance can be further suppressed. Discoloration. The divalent organic group of R2 in the formula (I) may, for example, be a substituted or unsubstituted extended aryl group such as a phenyl group; and a substituted or unsubstituted extended aryl group bonded to a carbon atom or a carbon chain. The basis of the structure, etc. Examples of the carbon atom or the carbon chain include an alkylene group such as a methylmethylene group or a dimercaptomethylene group; a carbonyl group and the like. The divalent organic group of R is preferably a group in which a pendant phenyl group is bonded to a glycidoxy group on the right side of the formula (1) to form a glycidoxyphenyl group. Further, from the viewpoint of suppressing discoloration of the conductive transparent substrate due to heat, it is preferred to use a carbon atom or a carbon chain interposed between the aryl groups to contain no methylene group. The divalent organic group of R may, for example, be as follows (any one of the brackets). 201215502
式（υ中之r1、 R: R1 級院基等烴基、其他有機其無特別限定’可舉例如：低 環童其’機基、氫原子等。R，、R3〜R1。之含 Γ Λ鏈可舉。t!如下述結構(中 括號内）。 ό (式中’ m表示正整數）。 式⑴所示之3官能以上的多官能環氧樹脂，能夠使用 例如··上i4式（II)、T述式（ΠΙ)、（ίν)所示之多官能環氧樹 脂。In the formula (r1, R1, R1, a hydrocarbon group such as a R1 grade, and other organic groups, there is no particular limitation), for example, a low-ring boy's machine base, a hydrogen atom, etc. R, R3 to R1. The chain may be as follows: t! The following structure (in the brackets) ό (wherein 'm represents a positive integer). The trifunctional or higher polyfunctional epoxy resin represented by the formula (1) can be used, for example, on the i4 formula ( II), a polyfunctional epoxy resin represented by the formula (ΠΙ), (ίν).
(III) 201215502 〇(III) 201215502 〇
所示之3官能的環氧樹 # - - - - ^(II) ^ ^ 3 - 9稭此，相較於使用其他的（I)所 不之3官能以上的吝它处俾匕上 v m 持高透明神 …展氧樹脂之情形，更能夠-面維 熱性，亦能夠進_牛__(心而提高硬化物之耐 J連步抑制因熱而變色。 透明樹脂組成物中所$ 古 斤凋配之同折射率樹脂，較佳 用氰酸酯樹脂。 权狂疋使 作為氰_旨樹脂，能夠使用例如：2,2_雙（4_氰酸基苯 基)丙烷、雙(3,5-二甲基_4_氰酸基笨基)甲⑥、2,2_雙⑷氰 酸基苯基）乙烧；此等之衍生物；芳香族氰酸自旨化合物等。 此等可單獨使用！種、亦可併用2種以上。 氰酸醋樹脂，由於具有堅固的分子結構，故能夠對硬 化物.賦予較高的玻璃轉移溫度(Tg)。例如：氰酸酿樹脂係 與環氧樹脂一起進行硬化反應，而生成三畊（triazine)環或 噚唑啉（oxazoline)環，而提高環氧樹脂之交聯密度，而形 成堅固的結構，而能夠對硬化物賦予較高的玻璃轉移溫度 (Tg)。此外’氰酸酯樹脂係由於在常溫下為固態，故經由 如後所述使透明樹脂組成物含浸於玻璃纖維的基材中並乾 燥’而在調製作為透明基材的材料之預浸體時，容易進行 指觸乾燥（set to touch)，使預浸體之處理性變良好。 201215502 相對於高折射率樹脂及低折 脂組成物中之氰酸…配量：Γ::的總罝，透明樹 以挤 以10〜4〇質量％為佳，以 =質量％較佳。若上述調配量過度少 則有時破璃轉移溫度⑽不會充分提高 ^ 度大於40質量％，目,丨亡& Α 右上迮5周配置過 保存中，Λ t 度會不足’而在含浸步驟和 '、氰酸酯樹脂會從清漆中析出。 作為高折射率樹脂之式⑴所示之 環氧樹脂、氰酸醋樹浐$^ 此以上的夕官能 〜16… 4之混合物之折射率，以1'58 =為佳。例如：當玻璃纖維之折射率為1 562時，高 折射率樹脂’以折射率為1 6 ^ 右為佳，右令玻璃纖維之 …、’·、，n，則以在η+0·03〜η+0·06之範圍為佳。 在本發明中’樹脂之折射率，都是意指在經硬 =树:曰之狀態(硬化樹脂)下之折射率，且為依照A· D542進行測試而得之值。 方面，透明樹脂組成物中所調配之低折射率樹 月曰，此夠使用環氧樹脂。低折射率樹脂之折射率以Μ 〜I.”為佳。例如：當玻璃纖維之折射率為咖時，低 折射率樹脂以折射率> 1 & m 請羊為1>5左右為佳，若令破璃纖維之折 • η’則以在n—〇.〇4〜n—〇〇8之範圍為佳。 作為低折射率樹脂使用之環氧樹脂，能夠使用：包含 環氧基-4-(2_環氧乙基）環己烧之環氧樹脂、氣化雙紛型 環氧樹脂等。 包含1，2-環氧基_4_(2_環氧乙基）環己貌之環氧樹脂， 由於在常溫下為U態，故㈣容易製造導電性透明基材。 201215502 作為風化雙齡型環氧樹脂，能夠使用例如：雙酚A型、 :吩F型、雙盼S型等。以使用在常溫下為固態的氮化雙 雜型^樹脂為佳。雖亦能夠使用在常溫下為液狀的氮化 酚里衣氧樹月曰’但在經由使透明樹脂組成物含浸於玻璃 纖’准的基材中並乾燥而調製作為透明基材的材料之預浸體 時’經常僅能夠乾燥至以指觸仍具有黏著性之狀態為止， 而有時預浸體之處理性會惡化。 發明能夠以下述方式來調製透明樹脂組成物：將如 上所述之高折射率樹脂與低折射率樹脂混合，並使折射率 近似於玻璃纖維之折射率。高折射率樹脂與低折射率樹脂 之混合tb例’能夠以近似於玻璃纖維之折射率之方式任意 調整ilt* 4 it日月樹月曰組成物之折射率’以儘可能接近玻 璃纖維之折射率為佳，具體而言，若令玻璃纖維之折射率 為η，則以在η-0·02〜η+〇_〇2之範圍内近似之方式來調 整為佳，以在η~〇.01〜η+〇 〇1之範圍内較佳。 透明樹脂組成物之硬化後之玻璃轉移溫度(Tg)為 200t以上，以230t以上為佳。這樣的話，能夠藉由硬化 樹脂之高玻璃轉移溫度（Tg)來提高透明基材之耐熱性。通 常，ITO膜之結晶化’ ^藉由成本較低的_般方法（例如藏 鍍法），則在高溫（例如200〜300〇C)下進行，但若如上所述 為耐熱性高的透明基材，則能夠容易形成結晶性高的ιτ〇 膜，而能夠實現低成本化。^，若透明樹月旨組成物之硬 化後之玻璃轉移溫度（Tg)未達200t，則與财熱性低的習知 塑膠膜之情形同樣地，若不使用特殊方法（例如離子鍍覆 12 201215502 法）則，.、、去於透明基材之表面形成結晶性高的it。^，而 會導致南成本化。玻璃轉移溫度（Tg)之上限係無特別限 定，貫用上之上限為35代左右。再者，在本發明中，玻 璃轉移溫度（Tg)為按照m C6481雇法而測得之值。 在本發明中，在透明樹脂組成物中能夠調配硬化起始 劑（硬化劑）。硬化起始劑能夠使用有機金屬料。有機金 屬孤可舉例如下述有冑酸與下述金屬之鹽：辛酸、硬脂酸、 乙酿丙酮化物、環院酸、柳酸等有機酸，· zn、Cu、Fe等金 屬。此等可單獨使用1種，亦可併用2種以上。其中，硬 化起始劑以使用辛酸鋅為佳。這樣的話，經由使用辛酸辞 作為硬化起始劑，相較於使用其他有機金屬鹽之情形，能 夠更加提高硬化樹脂之玻璃轉移溫度(Tg)。透明樹脂組： 物中之金屬鉗合物及辛酸辞等金屬鹽的調配量，較佳是在 〇·〇1 〜0.1 PHR(parts per hundred resin，相對於每 1〇〇 份樹 脂之份數）之範圍内。 此外，硬化起始劑，以使用陽離子系硬化起始劑為佳。 陽離子系硬化起始劑，可舉例如：芳香族銃鹽、芳香族鳞 鹽、銨鹽、鋁鉗合物、三氟化硼胺錯合物等。這樣的話， 經由使用陽離子系硬化起始劑作為硬化起始劑，即能夠提 高硬化樹脂的透明性。透明樹脂組成物中之陽離子系硬化 起始劑的調配量，以在〇.2〜3.〇PHR之範圍内為佳。 並且，亦能夠使用下述硬化觸媒作為硬化起始劑：三 乙胺、二乙醇胺等三級胺；2_乙基_4_咪唑、4_甲基咪唑、 2-乙基-4-甲基咪唑等。透明樹脂組成物中之此等硬化觸媒 13 201215502 的調配量，較佳是在0.5〜5.0 PHR之範圍内。 透明樹脂組成物，能夠經由調配下述成分而調製：高 折射率樹脂、低折射率樹脂、因應需要之硬化起始劑等。 此透明樹脂組成物’能夠因應需要而以溶劑稀釋，而調製 成清漆。溶劑可舉例如：苯、甲苯、二甲苯 '曱基乙基網 (MEK)、甲基異丁基酮、丙酮、甲醇、乙醇、異丙醇、^ 丁醇、乙酸乙酯、乙酸丁酯、丙二醇單甲基醚、丙二醇單 甲基醚乙酸酯、二丙酮醇、n，n，-二甲基乙醯胺等。 從提向導電性透明基材之耐衝擊性之觀點、和價廉且 供給品質安定之觀點等來看，構成基材之玻璃纖維，較佳 疋使用E玻璃、NE玻璃、τ玻璃之纖維。E玻璃纖維亦稱 為無鹼玻璃纖維，係廣泛使用作為樹脂強化用玻璃纖維， NE玻璃係指NewE玻璃。 此外’為了提高耐衝擊性之目的，玻璃纖維，以預先 藉由錢輕合劑進行表面處理為佳，财絲合劑通常係 作為玻璃纖維處理劑使用。玻璃纖維之折射率，以1>55〜 i.57為佳，以1.555〜+ 5車乂佳。此時，硬化後之高折射 率樹月曰之折射率，以1 5 8 I·63為佳，硬化後之低折射率 樹知之折射率，以i 47〜 為佳。若玻璃纖維、高折射 率树知及低折射率樹脂之 -^ ^ β 吓耵半在上述範圍内，則能夠獲 侍辨識性優異的導電性 田你士‘ 边月基材。並且，此時由於能夠使 用低成本的原料形成，故 g便 導電性透明基材。亦或者b/低成本來獲得可靠性高的 ⑽叫.53，,更化後 ：佳是：玻璃纖維之折射率為 之习折射率樹脂之折射率為154〜 201215502 1.63，硬化後之低折射率樹脂之折射率為丨47〜玻璃纖維 之折射率。此時，亦能夠獲得辨識性優異的導電性透明基 材。並且’此時由於能夠在寬廣的波長内配合玻璃纖維與 透明樹脂組成物之折射率，故能夠獲得更透明的導電性透 明基材。玻璃纖維的基材能夠使用玻璃纖維之織布或不織 布。 q % d W圾碉纖維 的基材中’並加熱乾燥，即能夠調製作為透明基材的材料 之預浸體。乾燥條件係無特別限定，以乾燥溫度⑽〜 、乾燥時間卜1〇分鐘之範圍為佳。 ，次’經由將U此預浸體進行加熱加壓成形、或將 又體重疊並進订加熱加塵成形，即能夠使透明 二 =化，而獲得透明基材。加熱加厂堅成形之條件 二㈣限疋’以溫度15。，、壓力!〜、、時間 10〜120分鐘之範圍為佳。 在按照上述進行而得之透明基材中，高折射率樹，i 度（Tg)高達朦c以上，而耐熱性優異。 璃轉移恤 此外’像上述所例示般的高折射 脂係透明性優異，而能夠獲得確保高透^崎射率樹 在此透明基材中，麵纖維的基材的基材。 量％之範圍内為佳。若在此範圍内，則a:在5〜6” 所得之強化效果而獲得高耐衝擊因由玻璃纖維 透明性。此外，若破璃纖維過多 月b夠獲得充分的 刻表面之凹凸會變大， 15 201215502 透明性亦降低。另一方面，若玻璃纖維過少，則有時透明 基材之熱膨脹率會增加。 再者’為了獲得高透明性，玻璃纖維的基材能夠將複 數片厚度較薄者重疊來使用。具體而言，能夠使用厚度 5〇μηι以下者作為玻璃纖維的基材，將2片以上的此基材重 疊來使用。玻璃纖維的基材的厚度係無特別限定，實用上 之下限為1 Ομιη左右。此外，玻璃纖維的基材的片數亦無 特別限定，實用上之上限為20片左右。當像這樣使用複數 片玻璃纖維的基材製造透明基材時，經由使透明樹脂組成 -物含浸於各個玻璃纖維的基材中並乾燥，而製作預浸體 後’將複數片此預浸體重疊並進行加熱加壓成形，即能夠 獲得透明基材，亦可在將複數片玻璃纖維的基材重疊之狀 態下’使透明樹脂組成物含浸並乾燥，而製作預浸體後， 將複數片此預浸體進行加熱加壓成形，而獲得透明基材。 而且，導電性透明基材，能夠藉由下述方式製造：於 透明基材的至少單面（或兩面）’形成電阻率為2.οχιό·4 iicm以下之ΙΤΟ膜，其電阻率以1 5 X 1 〇-4 Qcrn以下為佳（下 限為1.0 X 10-4 Hem)»當ITO膜之電阻率超過2.0 X 1〇_4 Qcm 時，必須為了獲得低電阻性而增加膜厚，但相反地，透明 性會降低。 如上所述電阻率低的ITO膜’能夠藉由下述方法來形 成，例如：直流（DC)或交流（RF)磁控濺鍍法等濺鍍法、 CVD(Chemical Vapor Deposition，化學氣相沉積）法、離子 鍍覆法等。其中’為了能夠實現低成本化及品質安定化， 16 201215502 ITO膜以藉由濺鍍法來形成為佳。換言之，能夠藉由下述 方式來形成ΙΤΟ膜：在真空下’一面導入惰性氣體，一面 在透明基材與作為標靶之ΙΤ0燒結體之間施加高電壓，來 使經離子化之惰性氣體撞擊標靶，而使被彈飛之標靶的粒 子附著在透明基材之表面。再者，於欲形成ΙΤ0膜之透明 基材之表面’可預先形成有透明樹脂層（後述）等機能薄膜。 在使用濺鑛法時，其條件並無特別限定，當使用DC 激鍍法時，其條件例如下述。 10 X 10'3 Torr) Pa · m3/s(10 〜 ^ 100 Pa · m3/s(0.1 - -0.3 濺鍍氣體：氬氣/氧氣 濺鍍壓力：0.133 〜1.333 Pa(lXi〇-3 氬氣流量：1.69X10·2 〜1.69X10 SCCM)(〇°C ’ 大氣壓 1013 hPa) 氧氣流量：1.69X10·4 〜5.07X10 SCCM)(〇°C，大氣壓 1013 hPa) 濺鍍電流：0.01〜15 A 濺鍍速度：10〜300 A/分鐘 賤鑛時間：〇. 5〜2小時 透明基材溫度：1〇〇〜3〇〇。〇 按照上述進行，能夠獲得波長5 5 0 nm之光之穿透率為 80%以上的導電性透明基材，其穿透率以9〇%以上為佳。 右穿透率未達80%，則辨識性不良，而無法作為觸控面板 等顯示器使用。 此外’在按照上述進行而得之導電性透明基材中，透 明基材的厚度以20〜1000 μιη為佳，以5〇〜5〇〇 μπι較佳。 17 201215502 此外，ITO膜的厚度’以10〜100 nm為佳，以15〜4〇 較佳。 在按照上述進行而得之導電性透明基材中，在其表面 (ITO膜之表面）或透明基材與IT〇膜之間，可形成有透明 樹脂層作為機能薄膜。藉由此透明樹脂層’即能夠更加提 高透明基材的透明性、表面平滑性和耐擦傷性。 此處，上述之透明樹脂層，能夠使用塗佈材料形成， 該塗佈材料係調配光聚合性多官能化合物及甲基乙基酮等 溶劑等而調製而成。具體而言，塗佈材料以使用下述物質 為佳.相對於單官能光聚合性化合物和其他添加劑等固態 份總量，包含1分子内具有5個以上的光聚合性基之光聚 合性多官能化合物5〇〜90質量％，且黏度為5〇〇〇 mpa. S(25t)以下（下限實質上為1〇mPa. s(25t：))。再者’由於 有分子的黏度會上升之虞，故光聚合性基的個數之上限實 質上為10個左右。光聚合性多官能化合物能夠使用例如: 具有6個光聚合性基之二季戊四醇六丙烯酸酯、具有3個 光聚合性基之季戊四醇三丙烯酸酯等。若光聚合性多官能 化合物之含量未達5〇質量％ ’則有無法充分獲得提高耐擦 傷性之效果之虞，相反地，若光聚合性多官能化合物之含 量超過90質量％，則有過硬而可撓性和彎曲性會惡化之 虞。此外，若塗佈材料的黏度超過5〇〇〇 mpa . s(25^，則 會難以控制膜厚，’吉果’例如當膜厚過度增加時，有可撓 性和彎曲性會惡化之虞。而且，$明樹脂層能夠藉由下述 方式來形成：將塗佈材料塗佈於透明基材或ιτ〇膜之表面 201215502 並使其乾燥後，照射紫外線。 如上所述’本發明之導電性透明基材，因透明基材係 使透明樹脂組成物含浸於玻璃纖維的基材中並使其硬化而 形成，因此相較於玻璃，更能夠實現薄型化、輕量化、高 耐衝擊性。而且，因透明基材較玻璃更輕，因此能夠容易 實現導電性透明基材之大面積化。 此外，透明基材係由於經玻璃布等玻璃纖維的基材所 強化，故即便使交聯密度高亦即耐熱性高的透明樹脂組成 物含浸，韌性亦不會降低，而耐熱性較一般的塑膠膜更高。 因此’在高溫下，能夠使用像濺鍍法般的一般方法，形成 結晶性高的ITO膜。 此外，在本發明之導電性透明基材中，該透明基材係 因玻璃纖維的基材，而相較於塑膠膜，熱膨脹率更小而尺 寸安定性更尚。具體而言，透明基材之熱膨脹率以18 ppm 以下（下限為5 Ppm)為佳。這樣的話，若透明基材之熱膨脹 率小而尺寸安定性高’則即使於其表面形成有結晶性高的 ITO膜’ ITG膜亦不容易發生龜裂’ m ΙΊΌ膜不容易破裂， 該龜裂係由透明基材與ΙΤ〇膜之熱膨脹率差所造成：因 此，能夠容易實現導電性透明基材之大面積化。再者，π。 膜之熱膨脹率為數ppm。然而’若透明基材之熱膨脹率超 過UPPm’則有IT〇膜會發生龜裂之虞，且有ιτ〇膜會因 此龜裂而破裂之虞。 此外，根據本發明， 之表面之ΙΤΟ膜結晶化， 由於能夠容易使形成於透明基材 故能夠將此ΙΤΟ膜之電阻率降低 19 201215502 須為了獲得降低薄片電 ，並且因波長550nm之 成為2.0X10-4Qcm以下。因此，無 阻等低電阻性而增加IT 〇膜的膜厚 光之穿透率成為80%以上，而能夠實現高透明性 此外’根據本發明，由於透明基材之尺寸安定性及耐 熱性優異’故即使對導電性透明基材進行高溫測試和怪溫 恆濕測試，IT〇膜亦不容易發生龜裂。此處，高溫測試為 例如：在15〇t、90分鐘之條件下將導電性透明基材加熱 之測試’值溫怪濕測試為例如：纟价、濕度85%奶之 環境下將導電性透明基材靜置24〇小時之測試。如上所 述’ ITO膜係由於不容易劣&，故能夠將進行高溫測試和 恆溫恆濕測試後之導電性透明基材之薄片電阻的變化率減 少成為20%以下。再者，薄片電阻的變化率能夠以（測試前 後之薄片電阻的差）x i 00/(測試前之薄片電阻）來算出。 這樣的話，本發明之導電性透明基材，由於能夠實現 薄型化、輕量化、高耐衝擊性、高透明性、低成本化、大 面積化，故忐夠較佳地設置於圖像顯示裝置之圖像顯示部 來使用。此處’圖像顯示裝置可舉例如：觸控面板、液晶 顯示器、電顯示器、有機EL顯示器等。特別是，觸控面 板能夠使用本發明之導電性透明基材作為顯示器而形成。 此外，在觸控面板中，有電阻膜方式觸控面板和靜電容方 式觸控面板，由於本發明之導電性透明基材能夠容易實現 積化故電阻膜方式觸控面板能夠使用導電性透明基 材作為30V型以上（上限為2〇〇v型）的顯示器而形成並且 靜電容方式觸控面板能夠使用導電性透明基材作為i5v型 201215502 以上（上限為100ν型）的顯示器而形成 … 的面積大的觸控面板，传難 、δ ，顯不器 換言之，塑膠膜係由於一般而言熱 1 。 化所靈的㈣ 龜裂。為了進-步製作成大面積 化所而的低電阻膜，而必須增加ΙΤ〇臈 會犧牲透明性。另—方面， 、，但相反地， ^换能 ^ ”由於—般較重且容易破 ΐ，故難以貫現薄型化、輕量化、高耐衝擊性。再者，所 :〇〇ν $ ’係'意指有效畫面之對角線尺寸為〇〇英时（1 英吋=2.54 cm)。 [實施例] 以下藉由實施例來具體說明本發明’但本發明並不受 實施例所限定。 (實施例1) 使用下述物質來作為透明樹脂組成物之調配成分。 1. 南折射率樹脂 • TECHMORE VG 3101 ’ Printec 公司製，具有上述式（π) 所示之分子結構之3官能環氧樹脂，折射率i 59，3〇質量 份 • BADCy，Lonza公司製，固態的氰酸酯樹脂，2,2_雙（4_ 氰酸基苯基）丙燒，折射率1.59，30質量份 2. 低折射率樹脂 • EHPE 3150，DAICEL化學工業公司股製，固態的包含 1，2-環氧基-4-(2-環氧乙基）環己烧之環氧樹脂，折射率 21 201215502 1.51，40質量份 3.硬化起始劑 •辛酸辞，0.02質量份 調配上述之高折射率樹脂及低折射率樹卜 硬化起始劑後，t其中添加作為溶劑之甲苯質量份Γ甲己 :乙基酮50質里伤’並在溫度7(rc攪拌溶解，藉 透明樹脂組成物之清漆。 ^ ^ 其次’使上述之透明樹脂組成物之清漆含浸於厚戶25 pm 之玻璃布（ASAHIKaseimicr〇devices 公司頂，型 號「1037」，E玻璃，折射率丨56)中，並在i5〇ec加熱$分 鐘，藉此去除溶劑並且使樹脂半硬化，而製作預浸體。 然後，重疊2片預浸體，設置於加壓機，並在i 7〇<>c、 2 MPa、15分鐘之條件下進行加熱加壓成形，藉此獲得樹 脂含有率為63質量％、厚度70 μηι之透明基材。 然後，藉由DC磁控濺鍍法來於上述透明基材之表面 形成厚度20 nm之ITO膜’而製造導電性透明基材。濺鍍 條件係如下所示。 濺鍍氣體：氬氣/氧氣 濺鍍壓力：0.133 Pa(l X 1(T3 Torr) 氬氣流量：8.45X 10·2 Pa. m3/s(50 SCCM)(0°C，大氣壓 1013 hPa) 氧氣流量：3.38X 10·4 Pa. m3/s(0.2 SCCM)(0°C，大氣壓 1013 hPa)The 3-functional epoxy tree shown is # - - - - ^(II) ^ ^ 3 - 9 straw, which is compared with the other than (3) which is not more than 3 functional groups. Highly transparent god...In the case of oxygen-enhancing resin, it is more capable of surface-heating, and it is also possible to enter the ___ (heart and improve the resistance of the hardened material to prevent discoloration due to heat. The transparent resin composition is For the same refractive index resin, a cyanate resin is preferably used. As a cyanide resin, for example, 2,2_bis(4-cyanophenyl)propane, double (3, can be used). 5-dimethyl-4-yl-cyanate-based phenyl)methyl 6,2,2-bis(4)cyanate phenyl)ethinane; derivatives of these; aromatic cyanic acid from a compound or the like. These can be used alone! Two or more types may be used in combination. Cyanate vinegar resin imparts a high glass transition temperature (Tg) to the carbide due to its strong molecular structure. For example, a cyanic resin is subjected to a hardening reaction together with an epoxy resin to form a triazine ring or an oxazoline ring, thereby increasing the crosslinking density of the epoxy resin to form a strong structure. A high glass transition temperature (Tg) can be imparted to the cured product. In addition, since the cyanate resin is solid at normal temperature, the transparent resin composition is impregnated into the base material of the glass fiber as described later and dried to prepare a prepreg as a material of the transparent substrate. It is easy to perform set to touch, making the prepreg rationally good. 201215502 Relative to the high refractive index resin and the low-fat composition, the amount of cyanic acid is: Γ:: total 罝, transparent tree is preferably 10 to 4 〇 mass%, preferably = mass%. If the above-mentioned blending amount is too small, sometimes the glass transition temperature (10) will not be sufficiently increased by more than 40% by mass, and the 右 & & amp 右 右 右 右 右 迮 迮 迮 迮 迮 迮 迮 迮 迮 迮 迮 迮 迮 迮 迮 迮 迮 迮The steps and ', cyanate resin will precipitate out of the varnish. The refractive index of the mixture of the epoxy resin and the cyanic acid vinegar of the formula (1) as the high refractive index resin is preferably 1'58 =. For example, when the refractive index of the glass fiber is 1 562, the high refractive index resin 'is preferably a refractive index of 16 μm, and the right glass fiber..., '·, n, then η+0·03 The range of ~η+0·06 is better. In the present invention, the refractive index of the resin means a refractive index in a state of hard = tree: 曰 (hardened resin), and is a value obtained by testing in accordance with A·D542. On the other hand, a low refractive index tree which is blended in the transparent resin composition is sufficient for epoxy resin. The refractive index of the low refractive index resin is preferably Μ 〜 I." For example, when the refractive index of the glass fiber is café, the refractive index of the low refractive index resin is preferably > 1 &m; If the glass fiber is folded, η' is preferably in the range of n-〇.〇4~n-〇〇8. As the epoxy resin used for the low refractive index resin, it can be used: including epoxy group- 4-(2-epoxyethyl) cyclohexane-fired epoxy resin, gasified double-type epoxy resin, etc. Containing 1,2-epoxy-4-4_(2-epoxyethyl) ring Epoxy resin is a U-state at normal temperature, so (4) It is easy to manufacture a conductive transparent substrate. 201215502 As a weathered two-age epoxy resin, for example, bisphenol A type, phenotype F type, and double-looking S type can be used. Etc. It is preferable to use a nitriding double-hybrid resin which is solid at normal temperature. It is also possible to use a phenolphthalein which is liquid at normal temperature, but is impregnated with a transparent resin composition. When pre-impregnated as a material for a transparent substrate in a glass fiber quasi-substrate and dried, it is often only dry until it still adheres to the finger. In the state of the prepreg, the rationality may deteriorate. The invention can modulate the transparent resin composition in such a manner that the high refractive index resin as described above is mixed with the low refractive index resin, and the refractive index is approximated to The refractive index of the glass fiber. The mixture of the high refractive index resin and the low refractive index resin tb can 'arbitrarily adjust the refractive index of the composition of the ilit* 4 it, the moon and the moon 曰 composition in a manner similar to the refractive index of the glass fiber. It is preferable that the refractive index of the glass fiber is good. Specifically, if the refractive index of the glass fiber is η, it is preferably adjusted in such a manner that it is approximated within the range of η-0·02 η η 〇 〇 , 2 . It is preferably in the range of η~〇.01 to η+〇〇1. The glass transition temperature (Tg) after curing of the transparent resin composition is 200 t or more, preferably 230 t or more. In this case, it can be hardened by The high glass transition temperature (Tg) of the resin improves the heat resistance of the transparent substrate. Usually, the crystallization of the ITO film is performed at a high temperature (for example, 200~ by a lower cost method (for example, a plating method). 300〇C), but if When it is described as a transparent substrate having high heat resistance, it is possible to easily form an iota ruthenium film having high crystallinity, and it is possible to achieve cost reduction. If the glass transition temperature (Tg) of the transparent resin composition is not cured, In the case of 200 t, in the same manner as in the case of the conventional plastic film having low heat build-up, if a special method (for example, ion plating 12 201215502 method) is not used, a highly crystalline it is formed on the surface of the transparent substrate. The upper limit of the glass transition temperature (Tg) is not particularly limited, and the upper limit is about 35 generations. Further, in the present invention, the glass transition temperature (Tg) is in accordance with m C6481. The value measured by the employment method. In the present invention, a curing initiator (hardener) can be formulated in the transparent resin composition. The hardening initiator can use an organometallic material. The organic metal is exemplified by the following salts of citric acid and the following metals: organic acids such as caprylic acid, stearic acid, ethyl acetonide, ring acid, and salicylic acid, and metals such as zn, Cu, and Fe. These may be used alone or in combination of two or more. Among them, the hardening initiator is preferably zinc octoate. In this case, by using octanoic acid as a curing initiator, the glass transition temperature (Tg) of the cured resin can be further improved as compared with the case of using other organic metal salts. In the transparent resin group, the compounding amount of the metal chelating compound and the octanoic acid metal salt is preferably 〇·〇1 ～0.1 PHR (parts per hundred resin, relative to the number of parts per 〇〇 resin) Within the scope. Further, the curing initiator is preferably a cationic hardening initiator. The cationic hardening initiator may, for example, be an aromatic onium salt, an aromatic scale salt, an ammonium salt, an aluminum clamp, or a boron trifluoride amine complex. In this case, the transparency of the cured resin can be improved by using a cationic curing initiator as a curing initiator. The amount of the cationic hardening initiator in the transparent resin composition is preferably in the range of 〇. 2 to 3. 〇 PHR. Further, the following hardening catalyst can also be used as a curing initiator: a tertiary amine such as triethylamine or diethanolamine; 2-ethyl-4-imidazole, 4-methylimidazole, 2-ethyl-4-methyl Imidazole and the like. The amount of such a hardening catalyst 13 201215502 in the transparent resin composition is preferably in the range of 0.5 to 5.0 PHR. The transparent resin composition can be prepared by blending a high refractive index resin, a low refractive index resin, a curing initiator which is required, and the like. This transparent resin composition ' can be diluted with a solvent as needed to prepare a varnish. The solvent may, for example, be benzene, toluene, xylene 'mercaptoethyl net (MEK), methyl isobutyl ketone, acetone, methanol, ethanol, isopropanol, butyl alcohol, ethyl acetate, butyl acetate, Propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diacetone alcohol, n, n, dimethylacetamide, and the like. The glass fiber constituting the substrate is preferably a fiber of E glass, NE glass or τ glass from the viewpoint of the impact resistance of the conductive transparent substrate and the viewpoint of low cost and stable supply quality. E glass fiber is also called alkali-free glass fiber, and is widely used as a glass fiber for resin reinforcement, and NE glass is NewE glass. Further, in order to improve the impact resistance, it is preferred that the glass fiber is surface-treated with a light-weight mixture in advance, and the silk yarn mixture is usually used as a glass fiber treatment agent. The refractive index of the glass fiber is preferably 1 > 55 to i.57, and is preferably 1.555 to +5. At this time, the refractive index of the high refractive index tree after the hardening is preferably 1 5 8 I·63, and the refractive index of the low refractive index tree after hardening is preferably i 47~. If the glass fiber, the high refractive index tree, and the -^^β of the low refractive index resin are within the above range, it is possible to obtain an electrically conductive property with excellent visibility. Further, in this case, since a low-cost raw material can be used, it is a conductive transparent substrate. Or b/low cost to obtain high reliability (10) called .53, after the change: better: the refractive index of the glass fiber is the refractive index of the refractive index resin is 154~201215502 1.63, low refraction after hardening The refractive index of the resin is the refractive index of 丨47~glass fiber. In this case, a conductive transparent substrate excellent in visibility can also be obtained. Further, at this time, since the refractive index of the glass fiber and the transparent resin composition can be blended in a wide wavelength, a more transparent conductive transparent substrate can be obtained. The base material of the glass fiber can be a woven or non-woven fabric of glass fiber. The d % d W waste fiber substrate is heated and dried to prepare a prepreg as a material of the transparent substrate. The drying conditions are not particularly limited, and it is preferably in the range of drying temperature (10) to drying time and drying time. The second step is obtained by subjecting the U prepreg to heat and pressure molding, or by superimposing and superimposing the heating and dusting molding, that is, the transparent film can be formed to obtain a transparent substrate. The conditions for the forming of the heating plant are two (four) limited to a temperature of 15. ,, pressure! ~,, the time is 10 to 120 minutes. In the transparent substrate obtained as described above, the high refractive index tree has an i degree (Tg) of not more than 朦c and is excellent in heat resistance. In addition, the high refractive index transparency as exemplified above is excellent, and it is possible to obtain a substrate which ensures a high permeability and a base material of the surface fibers in the transparent substrate. It is preferred that the amount is within the range of %. In this range, a: a high impact resistance obtained by a reinforcing effect of 5 to 6" is obtained by the transparency of the glass fiber. Further, if the glass fiber is excessively long, the unevenness of the surface of the engraved surface becomes large, 15 201215502 Transparency is also reduced. On the other hand, if the glass fiber is too small, the thermal expansion rate of the transparent substrate may increase. In addition, in order to obtain high transparency, the substrate of the glass fiber can be thinner than the plurality of sheets. Specifically, it is possible to use a substrate having a thickness of 5 μm or less as a base material of a glass fiber, and to use two or more of the base materials in a superposed manner. The thickness of the base material of the glass fiber is not particularly limited, and is practically used. The lower limit is about 1 Ομηη. The number of the base material of the glass fiber is not particularly limited, and the practical upper limit is about 20. When a transparent substrate is produced using a substrate made of a plurality of glass fibers as described above, the transparent substrate is transparent. The resin composition is impregnated into the substrate of each glass fiber and dried, and after the prepreg is prepared, 'the plurality of prepregs are superposed and heated and pressed to form The transparent substrate may be formed by impregnating and drying the transparent resin composition while the base material of the plurality of glass fibers is superimposed, and then preparing the prepreg, and then heating and pressing the plurality of the prepregs. A transparent substrate is obtained. Further, the conductive transparent substrate can be produced by forming a ruthenium film having a resistivity of 2.οχιό·4 iicm or less on at least one side (or both sides) of the transparent substrate. The resistivity is preferably 1 5 X 1 〇-4 Qcrn or less (lower limit is 1.0 X 10-4 Hem)»When the resistivity of the ITO film exceeds 2.0 X 1 〇 _4 Qcm, the film must be added in order to obtain low resistance. Thick, but conversely, the transparency is lowered. The ITO film 'having a low resistivity as described above can be formed by a method such as direct current (DC) or alternating current (RF) magnetron sputtering. CVD (Chemical Vapor Deposition), ion plating, etc. In order to achieve cost reduction and quality stabilization, 16 201215502 ITO film is preferably formed by sputtering. In other words, The ruthenium film can be formed by: Under the vacuum, an inert gas is introduced while applying a high voltage between the transparent substrate and the sintered body as the target, so that the ionized inert gas hits the target, and the particles of the target are bombed. It is attached to the surface of the transparent substrate. Further, a functional film such as a transparent resin layer (described later) may be formed in advance on the surface of the transparent substrate on which the ΙΤ0 film is to be formed. When the sputtering method is used, the conditions are not particularly limited. When the DC plating method is used, the conditions are as follows. 10 X 10'3 Torr) Pa · m3/s (10 ～ ^ 100 Pa · m3/s (0.1 - -0.3 sputtering gas: argon/oxygen) Sputtering pressure: 0.133 ~ 1.333 Pa (lXi〇-3 argon flow: 1.69X10·2 ~ 1.69X10 SCCM) (〇 °C 'atmospheric pressure 1013 hPa) Oxygen flow: 1.69X10·4 ~ 5.07X10 SCCM) (〇° C, atmospheric pressure 1013 hPa) Sputtering current: 0.01~15 A Sputtering speed: 10~300 A/min Antimony time: 〇. 5~2 hours Transparent substrate temperature: 1〇〇~3〇〇. 〇 According to the above, a conductive transparent substrate having a transmittance of light having a wavelength of 550 nm of 80% or more can be obtained, and the transmittance is preferably 9% or more. If the right transmittance is less than 80%, the recognition is poor and cannot be used as a display such as a touch panel. Further, in the conductive transparent substrate obtained as described above, the thickness of the transparent substrate is preferably from 20 to 1,000 μm, more preferably from 5 to 5 μm. Further, the thickness ITO of the ITO film is preferably 10 to 100 nm, more preferably 15 to 4 Å. In the conductive transparent substrate obtained as described above, a transparent resin layer can be formed as a functional film between the surface (the surface of the ITO film) or the transparent substrate and the IT film. By the transparent resin layer ′, the transparency, surface smoothness and scratch resistance of the transparent substrate can be further improved. Here, the above-mentioned transparent resin layer can be formed by using a coating material prepared by disposing a photopolymerizable polyfunctional compound or a solvent such as methyl ethyl ketone. Specifically, the coating material is preferably a material having a photopolymerizable property having 5 or more photopolymerizable groups in one molecule, based on the total amount of solid components such as a monofunctional photopolymerizable compound and other additives. The functional compound is 5 90 to 90% by mass, and the viscosity is 5 〇〇〇 mpa. S (25 t) or less (the lower limit is substantially 1 〇 mPa·s (25t:)). Furthermore, since the viscosity of the molecule increases, the upper limit of the number of photopolymerizable groups is substantially about 10. As the photopolymerizable polyfunctional compound, for example, dipentaerythritol hexaacrylate having six photopolymerizable groups, pentaerythritol triacrylate having three photopolymerizable groups, or the like can be used. When the content of the photopolymerizable polyfunctional compound is less than 5% by mass, the effect of improving the scratch resistance may not be sufficiently obtained. Conversely, if the content of the photopolymerizable polyfunctional compound exceeds 90% by mass, the hardness is excessive. The flexibility and flexibility will deteriorate. In addition, if the viscosity of the coating material exceeds 5 〇〇〇mpa.s (25^, it is difficult to control the film thickness, and the 'Jiguo', for example, may have deterioration in flexibility and flexibility when the film thickness is excessively increased. Further, the $ming resin layer can be formed by applying a coating material to the surface of the transparent substrate or the ruthenium film 201215502 and drying it, and then irradiating the ultraviolet ray. As described above, the conductive material of the present invention Since the transparent base material is formed by impregnating the transparent resin composition in the base material of the glass fiber and hardening it, it is thinner, lighter, and higher impact resistance than glass. Further, since the transparent substrate is lighter than glass, it is possible to easily realize a large area of the conductive transparent substrate. Further, since the transparent substrate is reinforced by a substrate of glass fibers such as glass cloth, even the crosslinking density is made. The high-heat-resistant transparent resin composition is impregnated, the toughness is not lowered, and the heat resistance is higher than that of a general plastic film. Therefore, at a high temperature, a general method such as sputtering can be used to form crystals. Further, in the conductive transparent substrate of the present invention, the transparent substrate is a substrate of glass fibers, and the thermal expansion coefficient is smaller and the dimensional stability is more than that of the plastic film. In other words, the transparent substrate has a thermal expansion coefficient of 18 ppm or less (the lower limit is 5 Ppm). In this case, if the transparent substrate has a small thermal expansion coefficient and a high dimensional stability, even a highly crystalline ITO is formed on the surface. The film 'ITG film is also less prone to cracking' m The film is not easily broken, and the crack is caused by the difference in thermal expansion between the transparent substrate and the film: therefore, a large area of the conductive transparent substrate can be easily realized. Furthermore, π. The thermal expansion coefficient of the film is several ppm. However, if the thermal expansion rate of the transparent substrate exceeds UPPm', the IT film may be cracked, and the film may be cracked and cracked. Further, according to the present invention, the ruthenium film on the surface is crystallized, and the resistivity of the ruthenium film can be reduced by being easily formed on the transparent substrate. 19 201215502 In order to obtain reduced sheet power, and because of the wavelength 550 The thickness of nm is 2.0X10-4Qcm or less. Therefore, the film thickness of the IT film is increased by 80% or more without resistance and low resistance, and high transparency can be achieved. Further, according to the present invention, the transparent substrate is The dimensional stability and heat resistance are excellent. Therefore, even if the conductive transparent substrate is subjected to high temperature test and strange temperature and humidity test, the IT film is not prone to cracking. Here, the high temperature test is, for example, at 15 〇t, The test for heating the conductive transparent substrate under the condition of 90 minutes is a test in which the conductive transparent substrate is allowed to stand for 24 hours in an environment of, for example, a barium price and a humidity of 85% milk. Since the ITO film is not easily inferior, it is possible to reduce the rate of change in the sheet resistance of the conductive transparent substrate after the high temperature test and the constant temperature and humidity test to 20% or less. Further, the rate of change of the sheet resistance can be calculated by (difference in sheet resistance before and after the test) x i 00 / (sheet resistance before the test). In this case, the conductive transparent substrate of the present invention can be preferably provided on an image display device because it can be made thinner, lighter, higher in impact resistance, high in transparency, lower in cost, and larger in area. The image display unit is used. Here, the image display device may be, for example, a touch panel, a liquid crystal display, an electric display, an organic EL display or the like. In particular, the touch panel can be formed using the conductive transparent substrate of the present invention as a display. In addition, in the touch panel, there are a resistive touch panel and a capacitive touch panel. Since the conductive transparent substrate of the present invention can be easily integrated, the resistive touch panel can use a conductive transparent substrate. The material is formed as a display of 30V type or higher (upper limit of 2〇〇v type), and the capacitive touch panel can be formed using a conductive transparent substrate as a display of i5v type 201215502 or higher (upper limit of 100ν type). Large touch panel, transmission difficulty, δ, display device, in other words, the plastic film is generally hot 1 . (4) Cracked. In order to further produce a low-resistance film of a large area, it is necessary to increase the ΙΤ〇臈 to sacrifice transparency. On the other hand, , but, conversely, ^transformation ^ ” is relatively heavy and easy to break, so it is difficult to achieve thinness, light weight, and high impact resistance. Furthermore, 〇〇ν $ ' 'Description' means that the diagonal size of the effective picture is 〇〇 (1 吋 = 2.54 cm). [Examples] Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited by the examples. (Example 1) The following materials were used as a blending component of a transparent resin composition. 1. South Refractive Index Resin TECHMORE VG 3101 'The 3-functional ring of the molecular structure shown by the above formula (π), manufactured by Printec Corporation Oxygen resin, refractive index i 59, 3 parts by mass • BADCy, manufactured by Lonza, solid cyanate resin, 2,2_bis(4-cyanophenyl)propane, refractive index 1.59, 30 parts by mass 2 Low Refractive Index Resin • EHPE 3150, manufactured by DAICEL Chemical Industries, Inc., solid state epoxy resin containing 1,2-epoxy-4-(2-epoxyethyl)cyclohexane, refractive index 21 201215502 1.51 40 parts by mass 3. Hardening initiator; octanoic acid, 0.02 parts by mass of the above high refractive index resin and After the low-refractive-index tree hardening initiator, t is added as a solvent toluene mass part of Γ 己 :: ethyl ketone 50 里 ' ' and at a temperature of 7 (rc stir to dissolve, by varnish of transparent resin composition. ^ ^ Next, 'Immerse the varnish of the above transparent resin composition in a glass cloth of 25 pm thick (ASAHIKaseimicr〇devices top, model "1037", E glass, refractive index 丨56), and heat it at i5〇ec In a minute, the solvent was removed and the resin was semi-hardened to prepare a prepreg. Then, two prepregs were superposed and placed on a press machine at i 7 〇 <>c, 2 MPa, 15 minutes. Under the conditions of heat and pressure molding, a transparent substrate having a resin content of 63% by mass and a thickness of 70 μm was obtained. Then, a thickness of 20 nm was formed on the surface of the transparent substrate by DC magnetron sputtering. A conductive transparent substrate was produced by the ITO film. The sputtering conditions are as follows. Sputtering gas: Argon/oxygen sputtering pressure: 0.133 Pa (l X 1 (T3 Torr) Argon gas flow: 8.45X 10·2 Pa. m3/s (50 SCCM) (0 ° C, atmospheric pressure 1013 hPa) Oxygen flow: 3.38X 10·4 P a. m3/s (0.2 SCCM) (0 ° C, atmospheric pressure 1013 hPa)
濺鍍電流：0.05 A 22 201215502Sputter current: 0.05 A 22 201215502
賤鍍速度：80 A/分鐘 濺鍍時間：1小時 透明基材溫度：250°C (實施例2) 除了使ιτο膜的厚度成為18nm以外，其餘與實施例 1同樣進行，而製造導電性透明基材。 (比較例1) 除了使用PET膜（東洋紡績公司製，A_41〇〇，厚度⑺〇 μ*11)作為透明基材’並將透明基材溫度設定成12〇它，使ιτο 膜的厚度成為3 5 nm以外，其餘與實施例1同樣進行，而 製造導電性透明基材。 (比較例2) 除了使ITO膜的厚度成為3〇 nm以外，其餘與比較例 1同樣進行’而製造導電性透明基材。 (比較例3) 除了使用載玻片（松浪硝子工業公I]製’厚度12 mm) 作為透明基材以外，其餘與實施例丨同椽進行，而製造導 電性透明基材。 (比較例4) 除了使ITO膜的厚度成為18 nm以外’其餘與比較例 23 201215502 3同樣進行，而製造導電性透明基材。 對如此進行而得之實施例及比較例之導電性透明基 材’進行下述測定及評估。 [硬化樹脂之玻璃轉移溫度（Tg)] 按照JIS C6481 TMA法’測定透明樹脂組成物硬化 而成之硬化樹脂之玻璃轉移溫度（Tg)。 [透明基材之熱膨脹率] 按照JIS K7 1 97，測定透明基材之熱膨脹率。 [ITO膜之電阻率] 按照JIS K7 1 94，測定導電性透明基材之IT〇膜之電 阻率。 [薄片電阻] 按照JIS Κ7194，測定導電性透明基材之薄片電阻。 [穿透率] 「使用曰立製作所公司製之可見-紫外分光光度計 「14100」，對導電性透明基材測定波長55〇 nm之光之 透率。 [耐衝擊測試] 使用JIS B1501中所, 甲I己載之鋼球，經由以〇 · 5 kj落下 來進行耐衝擊測試，令益里當 ,,^ ^ 「 ......*者為〇」，觉到破壞者為 X」，5平估耐衝擊性。 一此等測定及評估之結果如表丨所示。 [高溫測試] 在15〇C、90分鐘之條杜τ u々，分 也 刀题I係件下將導電性透明基材加熱， 24 201215502 而進行高溫測試。然後，按照JIS K71 94，測定高溫測試 後之導電性透明基材之薄片電阻。 [恆溫恆濕測試] 將導電性透明基材靜置於85°C、濕度85% RH之環境 中240小時，而進行恆溫恆濕測試。然後，按照JIS K7 194，測定恆溫恆濕測試後之導電性透明基材之薄片電 阻。 [表1] 實施例1 實施例2 比較例1 比較例2 比較例3 比較例4 透明基材 使透明樹脂組成物 含浸於玻璃纖維的 基材中並使其硬化 而形成者 PET膜 載玻片 透明基材的厚度 70 μιη 70 μιη 100 μιη 100 μηι 1.2 mm 1.2 mm 透明基材的樹脂成分之 玻璃轉移溫度(Tg)(°c) (JIS C6481) 240 240 110 110 — — 透明基材的熱膨張率 (ppm) 17 17 50 50 9 9 透明基材溫度(°C) (ITO膜形成時的溫度） 250 260 120 130 250 260 ITO膜的膜厚(nm) 20 18 35 30 20 18 ITO膜之電阻率 (XlO^XQcm) 1.3 1.2 2.2 2.2 1.3 1.3 穿透率(％) 89 91 79 76 89 91 耐衝擊測試 (JIS B1501) 〇 〇 〇 〇 X X 薄片電阻(Ω/〇) 150 100 150 100 150 100 150°C、90分鐘之 高溫測試後之 薄片電阻(Ω/Ο 150 100 220 160 150 100 85°C、85%RH、240 小 時之恆溫恆濕測試後之 薄片電阻(Ω/Ο) 160 110 190 140 160 110 由表1明顯能夠確認，藉由實施例1、2之導電性透明 25 201215502 基材，能夠實現薄型化、高耐衝擊性、高透明性。並且， 經由實現薄型化、高耐衝擊性’亦能夠實現輕量化、大面 積化。 相對於此，能夠確認，比較例1、2之導電性透明基材 係由於無法以濺鍍法來提高透明基材的溫度，故無法降低 ITO膜之電阻率。此外，關於薄片電阻，高溫測試後以及 怪溫恆濕測試後之值亦大幅降低，且其變化率超過20%。 因此，若不藉由成本高的離子鍍覆法，則應無法形成電阻 率低的ITO膜，亦難以實現大面積化。 此外，比較例3、4之導電性透明基材，其耐衝擊性低， 而應難以實現大面積化。 【圖式簡單說明】 無 【主要元件符號說明】 26贱 plating rate: 80 A/min sputtering time: 1 hour transparent substrate temperature: 250 ° C (Example 2) The same procedure as in Example 1 was carried out except that the thickness of the ιτο film was changed to 18 nm to produce a transparent conductive layer. Substrate. (Comparative Example 1) A PET film (A_41 〇〇, thickness (7) 〇μ*11, manufactured by Toyobo Co., Ltd.) was used as the transparent substrate, and the temperature of the transparent substrate was set to 12 ,, so that the thickness of the ιτο film was 3 A conductive transparent substrate was produced in the same manner as in Example 1 except for 5 nm. (Comparative Example 2) A conductive transparent substrate was produced in the same manner as in Comparative Example 1, except that the thickness of the ITO film was changed to 3 Å. (Comparative Example 3) A conductive transparent substrate was produced in the same manner as in Example except that a glass slide ("12 mm thick" manufactured by Songlang Glass Industry Co., Ltd.) was used as the transparent substrate. (Comparative Example 4) A conductive transparent substrate was produced in the same manner as in Comparative Example 23, 201215502, except that the thickness of the ITO film was changed to 18 nm. The following measurement and evaluation were carried out on the conductive transparent substrates of the examples and comparative examples thus obtained. [Glass transfer temperature (Tg) of the cured resin] The glass transition temperature (Tg) of the cured resin obtained by curing the transparent resin composition was measured in accordance with JIS C6481 TMA method. [Coefficient of Thermal Expansion of Transparent Substrate] The thermal expansion coefficient of the transparent substrate was measured in accordance with JIS K7 1 97. [Resistivity of ITO film] The resistivity of the IT film of the conductive transparent substrate was measured in accordance with JIS K7 1 94. [Sheet Resistance] The sheet resistance of the conductive transparent substrate was measured in accordance with JIS Κ 7194. [Transmission rate] "The transmittance of light having a wavelength of 55 〇 nm was measured on a conductive transparent substrate using a visible-ultraviolet spectrophotometer "14100" manufactured by Vision Instruments. [Impact Resistance Test] Using the steel ball contained in JIS B1501, the impact test was carried out by dropping it at 〇·5 kj, so that Iri Dang, ^ ^ "...* 〇", I feel that the destroyer is X", 5 flattened the impact resistance. The results of such measurements and assessments are shown in the table. [High temperature test] The conductive transparent substrate is heated under the condition of 15 ° C, 90 minutes, and the high temperature test is carried out under the rule of I. Then, the sheet resistance of the conductive transparent substrate after the high temperature test was measured in accordance with JIS K71 94. [Constant Temperature and Humidity Test] The conductive transparent substrate was allowed to stand in an environment of 85 ° C and a humidity of 85% RH for 240 hours, and subjected to a constant temperature and humidity test. Then, the sheet resistance of the conductive transparent substrate after the constant temperature and humidity test was measured in accordance with JIS K7 194. [Table 1] Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Transparent substrate A transparent resin composition was impregnated into a glass fiber substrate and cured to form a PET film slide. Thickness of transparent substrate 70 μηη 70 μιη 100 μιη 100 μηι 1.2 mm 1.2 mm Glass transition temperature (Tg) (°c) of resin component of transparent substrate (JIS C6481) 240 240 110 110 — — Thermal expansion of transparent substrate Rate (ppm) 17 17 50 50 9 9 Transparent substrate temperature (°C) (temperature at which the ITO film is formed) 250 260 120 130 250 260 Film thickness (nm) of the ITO film 20 18 35 30 20 18 Resistance of the ITO film Rate (XlO^XQcm) 1.3 1.2 2.2 2.2 1.3 1.3 Transmittance (%) 89 91 79 76 89 91 Impact resistance test (JIS B1501) 〇〇〇〇XX sheet resistance (Ω/〇) 150 100 150 100 150 100 150 Sheet resistance after °C, 90 minutes high temperature test (Ω/Ο 150 100 220 160 150 100 85 ° C, 85% RH, 240 hours of sheet resistance (Ω/Ο) after constant temperature and humidity test 160 110 190 140 160 110 It is apparent from Table 1 that the conductive transparent 25 201215502 substrate of Examples 1 and 2 can be used. The thickness is reduced, the impact resistance is high, and the transparency is high. The thickness and the high impact resistance can be reduced and the area can be reduced. The conductivity of Comparative Examples 1 and 2 can be confirmed. In the transparent substrate, since the temperature of the transparent substrate cannot be increased by the sputtering method, the resistivity of the ITO film cannot be lowered. Further, regarding the sheet resistance, the values after the high temperature test and the temperature and humidity test are also greatly lowered, and The rate of change is more than 20%. Therefore, it is not possible to form an ITO film having a low specific resistance by a high-cost ion plating method, and it is also difficult to achieve a large area. Further, the conductive transparent of Comparative Examples 3 and 4 The substrate has low impact resistance, and it should be difficult to achieve large area. [Simple description of the drawing] No [Main component symbol description] 26