201213782 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種接面溫度測量方法，特別的是測量 "T發榮光半導體元件之接面溫度的—接面溫度測 量方法。 【先前技術】 習知技術中，高效率的可發螢光半導體元件，例如太 陽能電池(solar cells)、發光二極體(LEDs)、與異質接面雙 載子磊晶片（Η B T)等。以太陽能電池為例，其係藉由吸收較 大的光源以產生對應的電流輸出，且—種可能的方式係可 透過聚焦鏡或透鏡將該光源聚焦在該太陽能電池上，以增 加該光源的吸收。然而，由於該光源聚焦後於該太陽能電 池上所產生的熱能亦隨之增加，而其所對應產生的電流係 有可此党到溫度的影響。於相關文獻中亦提及到，當太陽 能電池之溫度增加時，其所對應的開路電壓會隨之降低， 使得光電轉換(conversioI1 efficiency)效率亦隨之降低，而該 光電轉換效率係太陽能電池所最重視考量的特性。故有必 要針對太陽能電池之接面溫度進行測量’以進行相關的改 良工作。 省知技術因應上述的需求，發展出一些測量太陽能電 池之接面溫的方法，例如可透過聚焦後之太陽能通量係等 於電月b量輸出方式，判斷其接面溫度，其中該電能量係可 包含熱輻射損失等，並在熱平衡的條件下，該太陽能電池 溫度係因此可藉由帶有能量損失率之能量產生率之平衡， 201213782 用以決定該接面溫度。然而，上述_量方式，係需要透 過接觸的方式進行測量，而於其它方式亦有可能需要透過 破壞的方式，進行測量。 故針對上述所提及測量方式所造成的缺失，有必要發 展出一種以直接地、快速地、非接觸式、與非破壞性的方 式’用以獲得該可發螢光半導體元件（例如太陽能電池） 之接面溫度的方法。 【發明内容】 本發明係提供一種接面溫度測量方法，係利用光激螢 光(ph〇t〇luminescence，pL)分析的方式，用以達成測量可發 螢光半導體元件之接面溫度。 為達上述目的，本發明提出一種接面溫度測量方法， 係用於測量可發螢光半導體元件之接面溫度，其方法包含 發射藉由佔空比調變雷射光源至該可發螢光半導體元件， 並利用光激螢光(PL)分析的方式，以獲得該佔空比對應該 光激螢光之光譜的第一關係式；調整該可發螢光半導體元 件於絕對溫度區間，並獲得該光激螢光之光譜對應該絕對 溫度區間的第二關係式；以及藉由該第一關係式與該第二 關係式，以透過該光激螢光之光譜獲得該佔空比對該絕對 溫度區間之第三關係式，使得藉由該佔空比直接地對應測 量該可發螢光半導體元件之接面溫度。 與習知技術相較’本發明之接面溫度測量方法係可在 不直接地接觸可發螢光半導體元件之接面下，仍可以藉由 201213782 佔空比魏連續雷射光源，使得可藉由該佔空比與溫度的 對應關係以直接地、快速地、非接觸式、與非破壞性的方 式，用以獲得該可發蝥光半導體元件之接面溫度。 【實施方式】 為充分瞭解本發日狀目的、特徵及功效，㈣由下述 具體之實施例’並配合所附之圖式，對本發明做—詳細說 明，說明如後： 參考第1〜5圖，係本發明一實施例中之接面溫度測量 方法的示意圖。於第1目中’該接面溫度測量方法係用於 測里可發螢光半導體元件之接面溫度，例如可發螢光半導 體元件係可為太陽能電池（s〇lar cens)、發光二極體 (LEDs)、與異質接面雙載子蠢晶片（HBT)等，其結構如第2 圖所示’於此，該可發螢光半導體元件係具砷化鎵(GaAs) 之太陽能電池。此外，該可發螢光半導體元件係藉由有機 金屬化學氣相沉積法（metal-organic chemical vapor desposition ’ MOCVD)在P型鍺(Ge)的基材上長成。例如， 砷化鎵太陽能電池之結構可包含基板、砷化鎵緩衝層 (buffer layer)、磷化銦鎵背面電場（back surface field， BSF)、P 型神化鎵基層（p_type GaAs base layer)、N 型發射 層（N-type emitter layer)、填化紹銦透光層（AllnP window layer)、與珅化鎵接觸層（GaAs contact layer)，且其厚度係 分別為 150/zm、0.1#m、3//m、0.1#m 與 0.06 /zm，而Zn (鋅）摻雜與Si (矽）摻雜的濃度系介於2xl017 201213782 至 3xl018cnT3 與 1χ1〇18 至 lxl〇19cm_3 之間。 再者’回至第1圖’接面溫度測量方法係起始於步驟 S1 ’發射藉由佔空比調變雷射光源至該可發發光半導體元 件’並利用光激螢光(PL)分析的方式，以獲得該佔空比對 應該光激螢光之光譜的第一關係式，例如於此該連續雷射 光係由固態雷射所產生波長為523nm的連續雷射光，且透 過具有方波脈衝波為10Hz所形成之該佔空比。其中，該方 波脈衝波之佔空比(Duty cycle)係定義為：201213782 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for measuring junction temperature, in particular, a method for measuring junction temperature of a junction temperature of a semiconductor device. [Prior Art] In the prior art, high-efficiency fluorescable semiconductor elements such as solar cells, light-emitting diodes (LEDs), and heterojunction bipolar epitaxial wafers (Η B T) are used. Taking a solar cell as an example, it absorbs a larger light source to generate a corresponding current output, and a possible way is to focus the light source on the solar cell through a focusing mirror or a lens to increase the light source. absorb. However, the thermal energy generated by the light source after focusing on the solar cell also increases, and the current generated by the light source is affected by the party to temperature. It is also mentioned in the related literature that when the temperature of the solar cell increases, the corresponding open circuit voltage will decrease, and the efficiency of the photoelectric conversion (conversioI1 efficiency) will also decrease, and the photoelectric conversion efficiency is a solar cell. The most important feature to consider. Therefore, it is necessary to measure the junction temperature of the solar cell to perform related improvement work. In response to the above-mentioned needs, the state-informed technology has developed methods for measuring the junction temperature of solar cells. For example, the solar energy flux after focusing is equal to the output mode of the electricity month b, and the junction temperature is determined. The heat radiation loss and the like may be included, and under the condition of thermal equilibrium, the temperature of the solar cell can be determined by the balance of the energy generation rate with the energy loss rate, which is used by 201213782 to determine the junction temperature. However, the above-mentioned _ quantity method requires measurement by means of contact, and in other ways, it is also possible to perform measurement by means of destruction. Therefore, in view of the defects caused by the above-mentioned measurement methods, it is necessary to develop a direct, rapid, non-contact, and non-destructive manner to obtain the expandable semiconductor device (for example, a solar cell). The method of junction temperature. SUMMARY OF THE INVENTION The present invention provides a junction temperature measurement method for measuring the junction temperature of a fluorescable semiconductor device by means of photo-fluorescence (pL) analysis. In order to achieve the above object, the present invention provides a junction temperature measuring method for measuring a junction temperature of a fluorinable semiconductor device, the method comprising: transmitting a laser light source by a duty cycle to the fluorescable light a semiconductor element, and using a method of optical fluorescence (PL) analysis to obtain a first relationship of the duty ratio corresponding to the spectrum of the photo-induced fluorescence; adjusting the fluorescable semiconductor element in an absolute temperature range, and Obtaining a second relationship of the spectrum of the photoluminescence corresponding to the absolute temperature interval; and obtaining the duty ratio by transmitting the spectrum of the photoluminescence by the first relationship and the second relationship The third relationship of the absolute temperature interval is such that the junction temperature of the expandable fluorescent semiconductor element is directly measured by the duty ratio. Compared with the prior art, the junction temperature measuring method of the present invention can still be borrowed by the 201213782 duty cycle Wei continuous laser light source without directly contacting the junction of the fluorinable semiconductor device. The junction temperature and the temperature are used in a direct, fast, non-contact, and non-destructive manner to obtain the junction temperature of the photo-expandable semiconductor device. [Embodiment] In order to fully understand the purpose, characteristics and efficacy of the present invention, (4) The following specific embodiments are described in conjunction with the accompanying drawings, and the present invention is described in detail as follows: References 1 to 5 Figure is a schematic view showing a method of measuring junction temperature in an embodiment of the present invention. In the first item, the junction temperature measuring method is used for measuring the junction temperature of the fluorinable semiconductor device, for example, the fluorescable semiconductor device can be a solar cell (s〇lar cens), a light emitting diode The body (LEDs), and the heterojunction bipolar carrier (HBT) have a structure as shown in Fig. 2, wherein the fluorinable semiconductor device is a solar cell of gallium arsenide (GaAs). Further, the fluorinable semiconductor device is grown on a P-type germanium (Ge) substrate by metal-organic chemical vapor desposition (MOCVD). For example, the structure of the gallium arsenide solar cell may include a substrate, a gallium arsenide buffer layer, an indium phosphide back surface field (BSF), a p-type GaAs base layer, and a N N-type emitter layer, allinP light layer (AllnP window layer), and GaAs contact layer, and the thickness is 150/zm, 0.1#m, 3//m, 0.1#m and 0.06 /zm, and the concentration of Zn (zinc) doping and Si (矽) doping is between 2xl017 201213782 to 3xl018cnT3 and 1χ1〇18 to lxl〇19cm_3. Furthermore, 'return to Fig. 1' junction temperature measurement method starts from step S1 'transmitting the laser light source by the duty cycle to the light-emitting semiconductor element' and using optical fluorescence (PL) analysis In a manner of obtaining a first relationship of the duty ratio corresponding to the spectrum of the photo-induced fluorescence, for example, the continuous laser light system produces continuous laser light having a wavelength of 523 nm from a solid-state laser, and has a square wave The duty cycle formed by the pulse wave is 10 Hz. Wherein, the duty cycle of the square wave pulse is defined as:
D=t/T 其中t係方波脈衝波的寬度(sec·1)，τ係為週期（se(fl)。 於此’該連續雷射光係藉由該佔空比操作在範圍1 〇至 75%以進行測量’而該方波脈衝波之產生係可透過一函數 波產生器產生。 而光激螢光訊號係聚焦在0.75m的單色光，且該光機 榮光的訊號係透過矽偵測器進行該光激螢光訊號的測量。 值得注意的是，為使得利用本發明之接面溫度測量方 法更為準確，該可發螢光半導體元件係設置於銅製的樣本 支架上’其用以獲得該光激螢光之光譜。 再者’參考第3圖，其係藉由該佔空比於範圍1〇至75〇/〇 的調變，可獲得當佔空比與該光激螢光的頻譜的該第一關 係式。其中’當該佔空比係操作於1〇%的調變狀態時，其 峰值係對應於1423.8meV，且隨著佔空比朝向75%的調變 變化，該光激螢光的頻譜之峰值係朝向較低的能量端（或 稱紅位移，往長波長位移）位移，其係可說明因藉由該連 201213782 續雷射光使該可發螢光半導體元件之溫度增加所造成光激 螢光的頻譜之峰值的位移現象。而值得注意的是，隨著所 採用之該連續雷射光能量（energy)或強度(p〇wer)的不同，會 產生不同的溫度影響，但仍可用此方法獲得不同條件下的 接面溫度。 該第一關係式中，該光激螢光的頻譜之峰值係可可根 據實驗的數據被描續'如同虛線所示，且其斜率係為 dE/dD=0.615meV/%，亦即該光激螢光的頻譜之峰值的變化 •係母佔空比對應〇.615meV的變化，其呈現線性（nnear)的變 化，而如此的線性特性係有助於該可發螢光半導體元件之 接面溫度的測量。 接著步驟S2，調整該可發螢光半導體元件於絕對溫度 區間，並獲得該光激螢光之光譜對應該絕對溫度區間的第 二關係式’其可一併參考第4圖，例如藉由絕對溫度2〇〇 至300度的凱氏(K)溫度施加於該可發螢光半導體元件，用 φ 以獲得該絕對溫度與該光激螢光的頻譜之峰值變化之第二 關係式，且從該變化曲線可以了解到，藉由該絕對溫度的 變化’該光激螢光的頻譜之峰值產生紅位移（red_shift)現 象，亦即該光激螢光的頻譜之峰值隨著絕對溫度地提高朝 向低波長位移。其中，該紅位移的產生係由於該可發螢光 半導體元件之接面溫度上升使能隙變小的效應（reduce the energy bandgap)’故藉由上述的方式可獲得絕對溫度與該光 激螢光的頻譜之峰值的第二關係式。 此外，為使得更加精準的考慮實際的溫度變化，該可 201213782 發螢光半導體元件的熱傳導因素(heat transfer)現象需要進 行進一步的考量’其該熱傳導因素係可表示為： 其中該ΔΓ係接面溫度、Γ。係基板溫度、&係熱阻、與 2係熱能消耗。 而該熱阻係更表示為： ^th ~ P(f ! 其中该厂係一熱阻率、/係在該可發螢光半導體元件之 熱流方向的一厚度、J係一截面區域。 而該熱能消耗係表示在該接面之熱損耗，其更表示為： Q = Pa ~VPt 其中6係接面層、％轉換效率與、該連續雷射 之入射能量。 此外，上料賴㈣崎際絲㈣可發螢光 體，件之接面層W熱能散失，其可藉由該連續雷射光入 射i該接面所吸收的狀態進行該熱能消耗的損耗，其表 7JT 為· 、 匕一丄a — 其中Α係接面層、7係轉換效率與~系 之入射能量。 由來 特別是’該接面層A係可葬ώ 構，其表示為： 1由矩陣來表示為多 D〇l -D\ PX Z),'1 .£)2 其中D。、A、化係自由空間動態陣列。 201213782 並且上述中，其該轉換效率係進一步包含： 7 = α(1-ό·Δ7,) …其中“係在室溫下的效率、電池溫度係數、與 係為效率的函數。 最後藉由上述該第-關係式與該第二關係式，其步驟 S3係可藉由該第1係式與該第二關係式，以透過該光激 勞光之光譜獲得該佔空比對該絕對溫度區間之第三關係 S ’使得藉由該佔空比直接地對制量料錢光半導體 7G件之接面溫度，其可一併參考第5圖所示。 本發明在上文中已以較佳實施例揭露，然熟習本項技 術者應理解的是，該實施例僅用於描綠本發明，而不應解 讀為限制本發明之範圍。應注意的是，舉凡與該實施例等 效之變化與置換，均應没為涵蓋於本發明之範轉内。因此， 本發明之保護範圍當以下文之申請專㈣圍所界定者為 〇 【圖式簡單說明】 第1〜5圖係本發明實施例中之接面溫度測量方法的示 【主要元件符號說明】 S1〜S3 步驟D=t/T where t is the width of the square wave pulse wave (sec·1), and τ is the period (se(fl). Here, the continuous laser light is operated in the range of 1 to 75% is used for measurement' and the generation of the square wave pulse wave is generated by a function wave generator. The photo-excited fluorescent signal is focused on a monochromatic light of 0.75 m, and the signal of the optical glory is transmitted through the 矽The detector performs the measurement of the optical fluorescence signal. It is noted that in order to make the junction temperature measurement method using the present invention more accurate, the fluorinable semiconductor device is disposed on a sample holder made of copper. In order to obtain the spectrum of the photo-excited fluorescence. Referring to FIG. 3, the duty ratio and the optical excitation are obtained by the modulation of the duty ratio in the range of 1 〇 to 75 〇/〇. The first relation of the spectrum of the fluorescence, wherein 'when the duty ratio is operating in a modulation state of 1〇%, the peak value corresponds to 1423.8 meV, and the modulation is adjusted toward 75%. Change, the peak of the spectrum of the fluorescent light is shifted toward the lower energy end (or red displacement, long wavelength shift) It can explain the displacement phenomenon of the peak of the spectrum of the photo-induced fluorescence caused by the increase of the temperature of the fluorinable semiconductor element by the continuous laser light of 201213782. It is worth noting that The difference in energy or intensity of continuous laser light will have different temperature effects, but this method can still be used to obtain the junction temperature under different conditions. In the first relation, the optical fluorescence The peak of the spectrum is cocoa-based according to the experimental data' as shown by the dotted line, and its slope is dE/dD=0.615 meV/%, that is, the peak value of the spectrum of the photo-induced fluorescence. The space ratio corresponds to a change of 615.615meV, which exhibits a linear (nnear) change, and such a linear characteristic contributes to the measurement of the junction temperature of the fluorinable semiconductor device. Next, in step S2, the fluorescing is adjusted. The optical semiconductor component is in an absolute temperature range, and obtains a second relationship of the spectrum of the optical excitation corresponding to the absolute temperature range, which can be referred to FIG. 4 together, for example, by an absolute temperature of 2 to 300 degrees. Temperature (K) For the fluorinable semiconductor device, φ is used to obtain a second relationship between the absolute temperature and a peak change of the spectrum of the luminescence, and it can be understood from the variation curve that the absolute temperature changes The peak of the spectrum of the fluorescent light produces a red shift (red_shift) phenomenon, that is, the peak of the spectrum of the fluorescent light is shifted toward the low wavelength as the absolute temperature is increased. The junction temperature of the luminescent semiconductor element rises to reduce the energy bandgap, so that the second relation of the absolute temperature and the peak of the spectrum of the luminescence is obtained by the above method. In addition, in order to make the actual temperature change more precise, the heat transfer phenomenon of the 201213782 fluorescent semiconductor component needs further consideration. The thermal conduction factor can be expressed as: where the ΔΓ junction Temperature, Γ. The substrate temperature, & thermal resistance, and 2 series thermal energy consumption. The thermal resistance system is further expressed as: ^th ~ P(f ! where the factory is a thermal resistivity, / a thickness in the direction of heat flow of the fluorinable semiconductor element, and a cross section of the J system. The heat energy consumption indicates the heat loss at the junction, which is more expressed as: Q = Pa ~ VPt where 6 is the junction layer, the % conversion efficiency is, and the incident energy of the continuous laser. In addition, the feed is based on (4) The wire (4) can emit a phosphor, and the junction layer W of the piece is dissipated, and the heat energy consumption can be lost by the state in which the continuous laser light is incident on the junction surface, and the table 7JT is ··· a — the tantalum junction layer, the 7-series conversion efficiency and the incident energy of the ~ system. In particular, the junction layer A is a funeral structure, which is expressed as: 1 is represented by a matrix as multi-D〇l - D\ PX Z), '1 .£) 2 where D. , A, chemical system free space dynamic array. 201213782 and above, the conversion efficiency further comprises: 7 = α(1-ό·Δ7,) ... wherein "the efficiency at room temperature, the temperature coefficient of the battery, and the system are a function of efficiency. Finally by the above In the first relational expression and the second relational expression, in step S3, the first temperature formula and the second relational expression are used to obtain the duty ratio to the absolute temperature interval by transmitting the spectrum of the optical excitation light. The third relationship S' is such that the junction temperature of the 7G piece is directly measured by the duty ratio, which can be referred to together with FIG. 5. The present invention has been preferably implemented above. It is to be understood that those skilled in the art should understand that this embodiment is only used to describe the present invention and should not be construed as limiting the scope of the present invention. It should be noted that variations equivalent to the embodiment are And the substitutions are not included in the scope of the present invention. Therefore, the scope of protection of the present invention is defined by the following application (4). [The following is a brief description] The first to fifth embodiments are the present invention. The main component of the joint temperature measurement method in the embodiment DESCRIPTION S1~S3 step