201213602 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種無電極與薄膜污染之大面積大氣電 漿鍍膜裝置，尤指涉及一種可應用於可彎曲基料之電漿增强化 學鼠相儿積鑛膜裝置’特別係指連續式捲抽基材之大氣電漿增 强鍍膜裝置。 【先前技術】 電漿中含有高能之電子、離子、自由基與紫外光（uv) 等高活性種（HighActive Species) ’因此’三十年前真空電漿 就被廣泛應用於高附加價值之半導體製程，包括蝕刻（Etching) 與鍍膜（Deposition)。但由於真空電漿所需昂貴之真空腔與其 抽氣設備，為了降低產業投資成本與製造成本，以提昇競爭 力，開發大氣電漿設備與各種應用製程為近二十年來相當具有 吸引力之研究領城。 基於各種大氣電漿之表面處理製程無需真空設備，且基材 φ 面積不受真空腔之尺寸限制等兩項顯著優點，使大氣電漿具有 無限之應用潛力。因此，許多大氣電漿之應用研究已在國際間 積極展開，纟中，1品附加價錄高之大氣電聚增強化學氣相 沉積（Atmospheric-Pressurep丨asma_EnhancedDep〇siti〇n)或簡 稱大氣電聚鍍膜’因其用途與需求市場非常廣泛，主要包括 有.U)防刮之光學塑膠眼鏡；個人數位助理（Pers〇nal Digital Assistant，PDA )、行動電話、數位相機與數位攝職等 之顯不器之抗反射膜；（3)金屬之防蝕保護層；以及（4)高 刀子材料之阻氣層，可應用於輕薄短小且可撓曲之軟性電子產 201213602 品，包含有機發光二極體（Organic Light Emitting Diode， OLED)、薄膜電池、有機太陽能電池、無機太陽能電池與 LCD/LED等之封裝。因此，大氣電漿鐘膜為目前國際間之研 究重點，例如比利時Ghent University之R.Morent等人於2009 年在Progress in Organic Coatings期刊已發表他們之大氣電漿 鍍膜研究；而法國LGET-UPS之S.Martin等人亦於2004年在 Surface and Coating Technology期刊發表他們之大氣電漿鍍膜 結果。然而因其技術困難度相當高，故目前尚未有量產型之設 ^ 備與技術問世。 雖然目刖國際間已存在不少此類應用之專利被發表，於其 中’較具產業應用潛力之鍵膜裝置者，則包含有以下兩項。其 一為2003年Andrew James Goodwin等人申請之歐洲專利 WO03086031A1，專利名稱為「An Atmospheric Pressiire Plasma201213602 VI. Description of the Invention: [Technical Field] The present invention relates to a large-area atmospheric plasma coating device without electrode and film contamination, and more particularly to a plasma-enhanced chemical mouse that can be applied to a bendable base material. The phase deposition membrane device 'specially refers to the atmospheric plasma enhanced coating device of the continuous coiling substrate. [Prior Art] Plasma contains high-energy electrons, ions, free radicals, and high-activity species such as ultraviolet light (UV). Therefore, vacuum plasma is widely used in high value-added semiconductors 30 years ago. Processes, including etching (Etching) and coating (Deposition). However, due to the expensive vacuum chamber and vacuum pumping equipment required for vacuum plasma, in order to reduce the industrial investment cost and manufacturing cost, to enhance competitiveness, it is quite attractive to develop atmospheric plasma equipment and various application processes for nearly two decades. Leading the city. The surface treatment process based on various atmospheric plasmas does not require vacuum equipment, and the substrate φ area is not limited by the size of the vacuum chamber, which makes the atmospheric plasma have unlimited application potential. Therefore, the application research of many atmospheric plasmas has been actively carried out internationally. In the middle, the high-temperature electro-chemical enhanced vapor deposition (Atmospheric-Pressurep丨asma_EnhancedDep〇siti〇n) or the abbreviated atmospheric electropolymerization Coatings are widely used in the market for their use and demand. They mainly include .U) scratch-resistant optical plastic glasses; personal digital assistants (PDAs), mobile phones, digital cameras and digital cameras. The anti-reflection film of the device; (3) the anti-corrosion protection layer of the metal; and (4) the gas barrier layer of the high knife material, which can be applied to the soft, thin and flexible soft electronic product 201213602, including the organic light-emitting diode ( Organic Light Emitting Diode, OLED), thin film battery, organic solar cell, inorganic solar cell and LCD/LED package. Therefore, atmospheric plasma film is currently the focus of international research. For example, R. Morent et al. of Ghent University in Belgium published their atmospheric plasma coating research in the journal Progress in Organic Coatings in 2009; and France LGET-UPS S. Martin et al. also published their atmospheric plasma coating results in the Surface and Coating Technology journal in 2004. However, due to its high technical difficulty, there are no mass production types and technologies available. Although many patents for such applications have been published in the international community, the following two items are included in the key film device with industrial application potential. One is the European patent WO03086031A1 filed by Andrew James Goodwin et al., 2003, entitled "An Atmospheric Pressiire Plasma"
Assembly」’如第7圖所示，該習用之大氣電漿鍍膜鍍膜裝置 5係由一對以上之大氣電漿源5 i、5 2、一鍍膜前驅物之霧 化裝置5 3、一組捲軸式鍵膜基材裝置之三個捲筒5 4、5 5 • 與5 6、以及一電漿氣體進氣口 5 7等所組成，上述兩個大氣 電漿源51、5 2均採用平面型介電板電極結構，並利用氦氣 產生大氣電漿，其中第-魏源5丄之兩電極為5 1&與5工 b其電漿係用於鑛膜基材之清潔與活化，而第二 之^極為5 2a與5 2b，其霧化之前驅物與氦氣混合後進 亥第一電聚源5 2之電極5 2a、5 2b間被其電聚分解。 ”缺點為：⑴被分解之前驅物不但錢於基材上，亦有一部分 鑛在_表面而逐漸改變其電極之電聚特性，因此其電極内部 必須經常清除電極表面鑛上之薄膜，而無法作連續之生產；（ 5 201213602 鑛膜大氣電榮源之電漿氣體氦氣因混入霧化之前驅物，而降低 產生大氣電漿之密度’因而降低其鍍膜速率；以及（3)因使 用昂貴之氦氣作為電漿氣體，故其生產成本太高等。其二為 2009年Chia-Chiang Chang等人申請之美國專利第 20090162263 A1 ’ 專利名稱為「Atjnospheric-Pressure PlasmaAs shown in Fig. 7, the conventional atmospheric plasma coating coating device 5 is composed of a pair of atmospheric plasma sources 5 i, 5 2, a coating precursor atomizing device 5 3, a set of reels The three reels of the key film substrate device are composed of three reels 5 4, 5 5 • and 56, and a plasma gas inlet 57, and the two atmospheric plasma sources 51 and 52 are flat. Dielectric plate electrode structure, and using helium gas to generate atmospheric plasma, wherein the two electrodes of the first-Wei source 5 are 5 1 & 5 and b, the plasma is used for the cleaning and activation of the mineral film substrate, and the second The electrodes 5 2a and 5 2b are mixed with the helium gas before being atomized, and then electrocoagulated and decomposed between the electrodes 5 2a and 5 2b of the first electropolymer source 5 2 . The disadvantages are as follows: (1) Before being decomposed, the precursor is not only on the substrate, but also a part of the ore is gradually changing the electropolymerization characteristics of the electrode. Therefore, the inside of the electrode must always remove the film on the surface of the electrode, and cannot For continuous production; (5 201213602 Membrane atmosphere electric source of plasma gas helium due to mixing into the atomization of the precursor, and reduce the density of the atmospheric plasma to reduce the coating rate; and (3) expensive due to use The gas is used as a plasma gas, so its production cost is too high. The second is the US patent No. 20090162263 A1 filed by Chia-Chiang Chang et al. in 2009. The patent name is "Atjnospheric-Pressure Plasma".
Reactor」，如第8圖所示’該習用之大氣電漿鍍膜裝置6係由 一高頻率射頻（RF)電源3 3 〇、一提供鍍膜前驅物均勻分 配之高壓金屬電極3 1 〇、一提供電漿氣體均勻分配之絕緣外 • 罩3 5 0、以及一提供電漿與鍍膜前驅物喷口之接地金屬電極 3 2 0等所組成。其中該高壓金屬電極3 i 〇與該接地金屬電 極3 2 0係分別具有數個彼此相對應之鍍膜前驅物喷口 P1及 電漿分解後之前驅物噴口 P2，且該高壓金屬電極3 1 〇内並 具有一鍍膜前驅物導管S4、以及一鍍膜前驅物均勻分配板3 6 4與其出氣孔’而該絕緣外罩3 5 〇係包括數個電漿氣體入 口 P3 ’且該絕緣外罩3 5 0乃連接至該接地金屬電極3 2 0 而形成有一圍堵空間S5’該圍堵空間S5中尚具有二電槳氣體 • 均勻分配板3 6 2與其出氣孔P4。其缺點為：（i)因鍍膜前 驅物係在兩電極之間被電漿分解，所以同樣也有一部分被分解 之前驅物鍍在兩片金屬電極之表面，而逐漸改變其電極之電漿 特性與鐘膜性能’因此其高壓電極與接地電極均必須經常清除 其鑛膜’因而同樣也無法達到產業界所需的連續生產製程;（2) 鍍膜之前驅物流經兩電極間之電漿氣體，稀釋電漿氣體之濃 度，因而降低了電漿密度與鍍膜速率；以及（3)該裝置亦採 用昂貴之氦氣作為電漿氣體，因此亦無法降低生產成本。 综合以上兩種現存大氣電漿鍍膜裝置之兩項重大缺點 6 201213602 為：採用昂貴之氦氣為電聚氣體導致生產成本太高；以及電極 内部無法避免被賴前驅物鍍上薄膜以導致必須經常作清除 薄膜作業而無法施行連續式之鍍難程以提 本。由此可知，目前雖然已有可應用於可彎曲材料之大氣電漿 鍍縣置，惟其均具有氦氣電漿氣體昂貴及電極純鍵膜前驅 物链上薄膜等兩項重A缺點’因而無法作連續式生產與生產成 本太高而不符合產業應用需求，進而導致該項裝置與製程尚未 能應用到產業界。故，-般習用者係無法符合使用^於實際使 • ㈣之㈣’實有必要發展-魏完全改善上述兩項重大缺點 之裝置。 » 【發明内容】 本發明之主要目的係在於，克服習知技藝所遭遇之上述問 題並提供一種可應用於可彎曲基料之連續式捲軸基材之大氣 電漿增强鍍膜裝置。 本發明之次要目的係在於，提供一種除了可達到完全避免 • 電極内部被前驅物污染及鍍膜基材被電極外部脫落之微粒與 小薄膜碎片及鍍膜腔内之空浮(Aerosols)等污染外，並可達到 大面積捲軸式基材之均勻鍍膜，適合作捲軸式基材連續鍍臈生 產，俾以達到提昇品質、增加產量與降低成本之目的者。 為達以上之目的，本發明係一種無電極與薄膜污染之大面 積大氣電漿鍍膜裝置，係可應用於可彎曲基料，主要係由至少 一以上之垂直式平面型大面積氮氣大氣電漿活化電極及其高 電壓電源、至少一以上之垂直式平面型大面積氮氣大氣電漿鍍 膜電極及其高電壓電源、至少一以上之長線型前驅物均勻噴出 7 201213602 機構及其前驅滅生單元、-捲軸式觸基材雜機構、以及 一負氣壓鍍膜腔體等所構成。 【實施方式】 請參閱『第1圖』所*，係本發明之整體震置結構示意圖。 如圖所示：本發明係-種無電極與薄膜污染之大面積大氣電聚 錢膜裝置’係可應用於可弯曲基料。該裝置丄0 0主要係由至 少套以上之垂直式平面型大面積氮氣大氣電聚活化電極i a、至少-套以上之垂直式平面型大面積氮氣大氣電聚鐘膜電 極lb、至少一套以上之長線型前驅物均勻噴出機構2、一套 捲軸式鍍膜基材移動機構3、以及一負氣壓鑛膜腔體4等所構 成，俾以達到連續式之低成本與高品質之大面積大氣電聚鑛膜 產品者。 上述所提之垂直式平面社面魏氣錢電漿活化電極 1&及該垂直式平面型大面魏氣大氣電漿鍍輯極lb係配 置於該負氣壓鑛膜腔體4内’且分別連接至腔體外之高電壓電 源5a與5b ’俾以產生基材活化及鑛膜所需強度之大面積氮 氣=氣電襞。其中，該高電壓電源5績51)係可為卜聰千 赫茲（kHz)之脈衝、AC正弦波或处高功率電源。 上述所提之長線型前驅物均勻喷出機構2係配置於該負 氣壓鐘膜腔體4内，且可位於該垂直式平面型大面積氮氣大氣 電漿鑛膜1極i b與賴紐之狀上方灯方，並連接有一 前驅物產生單元2 〇 1於該負氣壓鐘膜腔體4外，俾以構成導 引氣態前驅物由其長線型前驅物氣孔均勻喷出，喷出之氣態前 驅物係W。着平行於鑛膜電極lb之表面，且位於鐘膜電極lb [S] 201213602 與鍍膜基材的中間。 上述所提之捲軸式鍍膜基材移動機構3係配置於該負氣 壓鑛膜腔體4内’其垂直通過大氣電漿活化區之基材係平行於 該垂直式平面型大面積氮氣大氣電漿活化電極la之電極表 面，且距活化電極表面約3-4 mm，而其通過電漿鍍膜區之基 材係亦平行於該鍍膜電極lb之電極表面，距鍍膜電極表面約 8-12 mm ’且其背面係以紅外線加熱至鍍膜所需之溫度，俾以 參Reactor", as shown in Fig. 8, 'the conventional atmospheric plasma coating device 6 is provided by a high frequency radio frequency (RF) power source 3 3 〇, a high voltage metal electrode 3 1 提供 providing a uniform distribution of the coating precursor The outer portion of the plasma gas is evenly distributed, the cover 305, and a grounded metal electrode 3 2 0 which provides a plasma and a coating precursor nozzle. The high-voltage metal electrode 3 i 〇 and the grounded metal electrode 3 2 0 respectively have a plurality of coating precursor nozzles P1 corresponding to each other and a pre-discharge nozzle P2 after plasma decomposition, and the high-voltage metal electrode 3 1 And having a coated precursor conduit S4, and a coated precursor uniform distribution plate 364 and its venting opening ', and the insulating outer cover 3-5 includes a plurality of plasma gas inlets P3' and the insulating outer cover 350 is connected To the grounded metal electrode 3 2 0 , a containment space S5 ′ is formed, and the enclosed space S5 has two electric propeller gases • a uniform distribution plate 362 and its air outlet P4. The disadvantages are as follows: (i) since the coating precursor is decomposed by the plasma between the two electrodes, a part of the precursor is also plated on the surface of the two metal electrodes, and the plasma characteristics of the electrode are gradually changed. The film performance 'so that its high-voltage electrode and ground electrode must always remove its mineral film' and thus can not reach the continuous production process required by the industry; (2) before the coating, the flow of plasma through the plasma between the two electrodes, diluted The concentration of the plasma gas thus reduces the plasma density and coating rate; and (3) the device also uses expensive helium gas as the plasma gas, and thus cannot reduce the production cost. Combining the two major shortcomings of the above two existing atmospheric plasma coating devices 6 201213602 is: the use of expensive helium as the electropolymerized gas leads to too high production costs; and the inside of the electrode cannot avoid the coating of the film by the precursor to cause frequent It is not possible to perform a continuous plating process to remove the film. It can be seen that although there are existing atmospheric plasma plating can be applied to flexible materials, they all have the disadvantages of expensive helium gas plasma and thin film on the electrode precursor film chain. The continuous production and production costs are too high to meet the industrial application requirements, which in turn leads to the application of the device and process to the industry. Therefore, the general practitioners are unable to meet the requirements of using the actual (4) (four)'s necessary development - Wei completely improved the above two major shortcomings. » SUMMARY OF THE INVENTION The primary object of the present invention is to overcome the above problems encountered in the prior art and to provide an atmospheric plasma enhanced coating apparatus that can be applied to a continuous reel substrate of a bendable substrate. A secondary object of the present invention is to provide a particle and a small film fragment which are completely prevented from being contaminated by the precursor inside the electrode and the substrate is detached from the outside of the electrode, and aerosols in the coating chamber. It can reach the uniform coating of large-area roll-type substrate, and is suitable for continuous rhodium-plating production of roll-type substrate, in order to achieve the purpose of improving quality, increasing output and reducing cost. In order to achieve the above purpose, the present invention is a large-area atmospheric plasma coating device without electrode and film contamination, which can be applied to a bendable base material, mainly consisting of at least one vertical flat type large area nitrogen atmosphere plasma. The activation electrode and the high-voltage power source thereof, the at least one vertical planar large-area nitrogen atmospheric plasma coating electrode and the high-voltage power source thereof, and the at least one long-line precursor are evenly ejected 7 201213602 mechanism and its precursor destroying unit, - a reel type touch substrate hybrid mechanism, and a negative pressure coating chamber. [Embodiment] Please refer to "Fig. 1", which is a schematic diagram of the overall vibration structure of the present invention. As shown in the figure, the present invention is a type of large-area electrically concentrated polymer film device which is electrodeless and film-contaminated, and can be applied to a bendable base. The device 丄0 0 is mainly composed of at least one set of vertical flat type large-area nitrogen atmosphere electropolymerization activation electrode ia, at least one set of vertical flat type large-area nitrogen atmosphere electric polymerization film electrode lb, at least one set or more The long-line type precursor uniform discharge mechanism 2, a set of roll-type coating substrate moving mechanism 3, and a negative-pressure mineral film cavity 4, etc., to achieve continuous low cost and high quality large area atmospheric electricity Poly film products. The above-mentioned vertical planar social surface Weiqi Qian plasma activation electrode 1& and the vertical planar large-faced Wei gas atmospheric plasma plating series lb series are disposed in the negative pressure mineral membrane cavity 4' The high voltage power supplies 5a and 5b'' connected to the outside of the cavity are used to generate a large area of nitrogen for the activation of the substrate and the strength required for the mineral film. Among them, the high-voltage power supply 5 (51) can be a pulse of Bucon kilohertz (kHz), an AC sine wave or a high-power power supply. The above-mentioned long-line type precursor uniform discharge mechanism 2 is disposed in the negative bellows chamber 4, and can be located in the vertical plane type large-area nitrogen atmosphere plasma film 1 ib and Lai The upper lamp is connected to a precursor generating unit 2 〇1 outside the negative bellows chamber 4, and the crucible is configured to guide the gaseous precursor to be uniformly ejected by the long-line precursor pores, and the gaseous precursor is ejected. Department W. It is parallel to the surface of the membrane electrode lb and is located between the clock electrode lb [S] 201213602 and the coated substrate. The above-mentioned roll-type coated substrate moving mechanism 3 is disposed in the negative-pressure mineral film cavity 4, and the substrate perpendicular to the atmospheric plasma activation zone is parallel to the vertical planar large-area nitrogen atmospheric plasma. The surface of the electrode of the active electrode la is about 3-4 mm away from the surface of the active electrode, and the substrate passing through the plasma coating zone is also parallel to the electrode surface of the coating electrode lb, about 8-12 mm from the surface of the coated electrode. And the back side is heated by infrared rays to the temperature required for the coating.
構成以捲軸式連續傳送基材通過該電漿活化區及鍍膜區，達到 連續大氣電漿鍍膜之目的。 上述所提之負氣壓鍍膜腔體4，其於腔體上方係具有一抽 氣口 4 1，並透過該抽氣口 41連接有一抽氣單元4 2，俾以 構成負氣壓之鑛膜腔，防止氣態前驅物洩露到鑛膜腔四周之作 業場所。 一 5月參閱第2Α圖、第2Β圖、第2C圖及第2DII』所 不’係分別為本發明垂直式平面型大面積氮氣大氣電漿電極結 ，之短軸中心剖面示意圖、本發明垂直式平面型大面積氮氣大 乱電聚電，結構之長軸中心剖面示意圖、本發明垂直式平面型 大面積氮氣大氣錄電極結構之短軸侧邊剖面示意圖、以及第 2 Α圖之長轴g_h剖面示意圖。如圖所示：本發明之垂直式平 面積氮氣大氣電聚活化電極結構la與鑛膜電極ib係 屬封氣之長方形金屬腔體1 3、—安裝於該長方形金 i 3之平面型接地電極丄2、一配置於該長方形金屬腔 置於今^水冷式之平面型高電壓電極1 1、以及一對分別配 型高電壓電極1 1上方與下方之電裝氣體均句喷 、15等所組成。其中，該平面型高電壓電極H m 9 201213602 係由H片氧化介電板1 1 2之長方形金屬平板 1 1 1、一黏貼於氧化鋁陶瓷介電板i i 2四周邊緣之塑膠冷 部水槽1 1 3、一貫穿該塑膠冷卻水槽113而與該金屬平板 1 1 1連接之高電壓連接棒1 1 4、一環繞該高電壓連接棒工 1 4之阿電壓絕緣環1 1 5、及一配設於該塑膠冷卻水槽1 1 3内作為電極表面之冷卻水流騎道i i 6等所組成，且該長 方形金屬腔體13係分別設有一冷卻水入口 i 3丄與出口工 3 2、及電極上方與下方之電漿氣體進氣管丄3 3與丄3 4。 • 請參閱『第3 A圖、第3 B圖及第3 c圖』所示，係分別 為本發明電漿氣體均勻喷出構件之氣孔配置示意圖、第3 A圖 之a-b剖面不意圖、以及第3 A圖中氣體擴散均勻混合段之c d 剖©示意圖。如圖所示：本發明之電漿氣體均勻喷出構件工 4、15係為-扁平的方盒’具有—外殼丄4丄，其氣孔配置 係由-個進氣口14 0、-個二等分氣體分配隔板i 4 2、一 個四等分氣體分配隔板！ 4 3、-個人等分㈣分配隔板工4 4、-個十六等分氣體分配隔板14 5、-個電漿氣體擴散均 • 勻混合段14 6及一個電漿氣體喷口14 7等所組成。 上述所提之二等分氣體分配隔板14 2係配設有二個孔 徑相同之出氣孔4 21與4 2 2及一個此對出氣孔4 21、4 2 2之氣體隔離板4 2 3 ;該四等分氣體分配隔板丄4 3係配 設有四個孔徑相同之出氣孔4 31、4 3 2、4 3 3與4 3 4 及三個該出氣孔4 31、432、433、43 4之氣體隔離 板4 3 5、4 3 6與4 3 7;該八等分氣體分配隔板工4 4係 配設有八孔徑相同之出氣孔及七個這些出氣孔之氣體隔離 板；最後，該十六等分氣體分配隔板14 5係配設有十六個孔f 201213602 徑相同之出氣孔。其中，每一出氣孔之痛 氣體分配隔板之間隙係越小越好，且复 °板與其下一層 段：L 4 6之長度L係錢賴距D之^=練均故合 此電漿氣體擴散物合段i 4 6之下面;The continuous transfer substrate is formed by a roll-type continuous passage through the plasma activation zone and the coating zone to achieve continuous atmospheric plasma coating. The negative pressure coating chamber 4 mentioned above has an air suction port 4 1 above the cavity, and an air extraction unit 4 2 is connected through the air suction port 41 to form a film cavity of a negative air pressure to prevent a gaseous state. The precursor leaks into the work area around the film chamber. In May, reference to Figure 2, Figure 2, Figure 2C, and Figure 2DII are respectively the vertical planar large-area nitrogen atmospheric plasma electrode junctions of the present invention, and the short-axis center profile diagram of the present invention is vertical. Schematic diagram of large-area nitrogen large electric current, large-axis center profile of structure, short-axis side profile of vertical planar large-area nitrogen atmosphere recording electrode structure of the present invention, and long-axis g_h profile of second figure schematic diagram. As shown in the figure: the vertical flat-area nitrogen atmosphere electropolymerization activation electrode structure la and the mineral film electrode ib of the present invention are sealed rectangular metal cavities 13 - a planar ground electrode mounted on the rectangular gold i 3丄2, a rectangular metal cavity is arranged in the water-cooled planar high-voltage electrode 1 1 , and a pair of respectively matched high-voltage electrodes 1 1 and below the electric gas is sprayed, 15 and so on. . Wherein, the planar high voltage electrode H m 9 201213602 is a rectangular metal plate 11 1 made of an H piece oxidized dielectric plate 1 1 2 , and a plastic cold water tank 1 adhered to the periphery of the alumina ceramic dielectric plate ii 2 1 3, a high voltage connecting rod 1 1 4 connected to the metal cooling plate 113 and connected to the metal plate 11 1 , a voltage insulating ring 1 1 5 surrounding the high voltage connecting bar 1 4 , and a matching The cooling water flow path ii 6 or the like is disposed in the plastic cooling water tank 1 1 3 as an electrode surface, and the rectangular metal cavity 13 is respectively provided with a cooling water inlet i 3 丄 and an outlet 3 2 , and an electrode above With the plasma gas inlet pipe below 丄 3 3 and 丄 3 4 . • Refer to “3A, 3B, and 3c” for the arrangement of the pores of the plasma gas uniform discharge member of the present invention, and the ab profile of Fig. 3A, and Figure 3 is a schematic view of the cd section of the gas diffusion uniform mixing section. As shown in the figure: the plasma gas uniform discharge member 4, 15 of the present invention is a flat-shaped square box having a casing 丄4丄, and its pore arrangement is composed of - one inlet port 14 0, - two Divide the gas distribution partition i 4 2. A four-divided gas distribution partition! 4 3, - personal aliquots (4) distribution of partitions 4 4, - 16 aliquots of gas distribution partitions 14 5, a plasma gas diffusion • uniform mixing section 14 6 and a plasma gas nozzle 14 7 etc. Composed of. The above-mentioned halved gas distribution partition plate 14 2 is provided with two air outlet holes 4 21 and 4 2 2 having the same aperture and a gas separation plate 4 2 3 of the pair of air outlet holes 4 21 and 4 2 2 ; The four-divided gas distribution partition 丄4 3 is provided with four air outlets 4 31 , 4 3 2, 4 3 3 and 4 3 4 having the same aperture, and three of the air outlets 4 31, 432, 433, 43 4 gas barrier plates 4 3 5, 4 3 6 and 4 3 7; the octave gas distribution baffle 44 4 is equipped with eight gas orifices having the same pore diameter and seven gas outlet holes; The sixteen-divided gas distribution partition 14 5 is provided with sixteen holes f 201213602 with the same diameter. Wherein, the gap between the gas distribution partitions of each vent hole is as small as possible, and the complex plate and its lower layer: the length of L 4 6 is the distance of the money D; Below the gas diffusion junction i 4 6;
字型之高電舰緣板i 4 8，並使氣 附有―&置L 小於或等於電極之塑膠冷卻水槽與接地且封= 之寬度w略 腔體:壁之間距，且安裝於緊靠_ -=The type of high-voltage shipboard i 4 8, and the gas is attached with "&L is less than or equal to the electrode of the plastic cooling water tank and the ground and the width of the seal = a slight cavity: wall spacing, and installed tightly By _ -=
口14 7兩侧各設-片具有導氣之氣㈣板14 9 = 儘量貼近該歸冷卻水槽外緣，俾使電極長軸 漿氣體只流向與電極長軸之垂直方向。 電 =參閱『第4A圖、第4B圖及第4C圖』所示，係分別 圓:明長線型則驅物均勻噴出機構之前驅物氣孔配置示意 圖、第4 A®之e_f觸、以及第4 擴散均勾混合段之^剖面示意圖。如圖所示：本發明 勿均勾喷出機構2係具有一外殼2 0，其前驅物氣孔配 ^系由-進氣口 2卜-個二等分氣體分配隔板2 2、一個四 荨分氣體分配隔板2 3、一個八等分氣體分配隔板2 4、一個 =六等分氣體分配隔板2 5、一個長線型氣體擴散均句混合段 26及一長線型氣體喷口27所組成。 -上這所七1之一專分氧體分配隔板2 2係配設有二個孔徑 相同之出氣孔2 21與2 2 2及-個此對出氣孔2 21、2 2 2之氣體隔離板2 2 3 ;四等分氣體分g&隔板2 3係g:設有四 <固孔控相同之出氣孔2 3 1、2 3 2、2 3 3與2 3 4及三個 ^些出31、232、233、23 4之氣體隔離板2 35'236與237;該八等分氣體分配隔板2 4係配設有 201213602 八個孔徑相同之出氣孔及七個這些出氣孔之氣體隔離板；最 後，該十六等分氣體分配隔板2 5係配設有十六個孔徑相同之 出氣孔。其中，每一出氣孔之氣體隔離板與其下一層氣體分配 隔板之間隙係越小越好’且其長線型氣體擴散均勻混合段2 6 之長度P係至少為最後一層氣體分配隔板出氣孔之間距Q之 10倍，又此長線型氣體擴散均勻混合段2 6之寬度V為小於 或等於最後一層氣體分配隔板出氣孔之直徑之1/2，可俾以提 昇氣態前驅物喷出之速度。Each side of the mouth 14 7 is provided with a gas-conducting gas (4) plate 14 9 = as close as possible to the outer edge of the cooling water tank, so that the long-axis slurry gas of the electrode flows only in the vertical direction with the long axis of the electrode. Electricity = Refer to "4A, 4B and 4C", respectively, for the round: the long-line type, the schematic diagram of the venting of the precursor before the uniform discharge mechanism, the 4th A® e_f touch, and the 4th Schematic diagram of the cross section of the diffusion-mixed section. As shown in the figure, the present invention does not have a casing 2, and has a casing 20, the precursor of which is provided by a gas inlet port 2 - a halved gas distribution plate 2 2, a four inch a gas distribution partition 23, an octant gas distribution partition 24, a = six equal gas distribution partition 25, a long-line gas diffusion uniform mixing section 26 and a long-line gas nozzle 27 . - One of the seven-one special oxygen distribution partitions 2 2 is provided with two air outlets 2 21 and 2 2 2 having the same aperture, and the gas isolation of the pair of air outlets 2 21, 2 2 2 Plate 2 2 3 ; quarter aliquot gas g & separator 2 3 series g: provided with four < solid hole control same vent 2 3 1, 2 3 2, 2 3 3 and 2 3 4 and three ^ 31, 232, 233, 23 4 gas isolating plates 2 35'236 and 237; the octave gas distribution baffle 24 is equipped with 201213602 eight venting holes of the same aperture and seven of these venting holes The gas isolating plate; finally, the sixteen-divided gas distribution partitions 25 are provided with sixteen outlet holes having the same aperture. Wherein, the gap between the gas barrier of each vent and the gas distribution baffle of the next layer is as small as possible, and the length of the long-line gas diffusion uniform mixing section 6 is at least the last gas distribution baffle vent. 10 times the distance from Q, and the width V of the long-line gas diffusion uniform mixing section is less than or equal to 1/2 of the diameter of the gas outlet of the last gas distribution partition, so as to enhance the ejection of the gaseous precursor. speed.
请參閱『第5圖』所示，係本發明之捲軸式鑛膜基材移動 麵架構目。如目獅：本㈣之捲赋賴紐移動機 構3係由-可f曲之基材祕絲3丨、基材收料捲軸32、 一配設於該基材出料捲軸31與電漿活化區上方之垂直式基 材定位轴3 3、一配設於該基材收料捲軸31與電漿錢膜區上 方之垂直式基材定位軸34及該紐電漿麵區之—紅外線基 材加熱元件3 5等所組成。 請麥閱 乐〇圖』所示’係本發明具電漿喷口之平面型 地電極結構示意圖。如圖所示：本發明之平面型接地電極工 係由一金屬板1 2卜—於該金屬板1 2上局部均勻分佈之 漿喷出口陣列1 2 2、至少6片設於該電漿喷出口陣列丄2 局部邊緣之氧她喊㈣1 2 3、及數輝設於該金屬板 2 1周，用以絲於接地且封氣之長方形金屬腔體之裝配 1 2 4等所組成。其中，該氧化銘陶究墊片1 2 3之下部係 入緊配槽之金屬板’作為氧化細;£塾片1 2 3之定位機帝 而此氧化_片！ 2 3突出該金屬板之高度，係為電紫 電之間距約小於或等於G6毫米（mm)。 IS] 12 201213602 j所提之該㈣嘴出。陣列122係由至少兩故 :::喷口所組成，每一組電裝噴口係由數排氣孔列均 電漿喷口相對應氣孔之位置橫向位移為其氣孔直徑組 聚喷出口陣列122包括三組電浆喷口 且 ，漿喷口相對應氣孔之位置橫向位移為其氣孔直彳以之^且 2 2每—電时口之氣孔直徑d係 為i於或极0.6賴，而橫向陣列嘴口之間距為小於 3d，且相鄰兩排陣列賴嘴σ之間距為小於或等於如发 中第:組電料出口_122最後—排與其下—排陣列嘴 口之弟一排之間距為小於或等於4d。 由此可知，本發明係具有以下四項主要特徵，其一為創作 極小間距電極結構，以採用低成本之氮氣氣體作為電漿氣體； =二為創作-噴射式之賴電極，且灿之電㈣在接地電極 外面分解鍍膜所用之前驅物，因此其電聚電極内部不會被 2前驅物附著與污染；其三為創作垂直式電極與基材之活化區 ”鑛膜區，以避免電極外部贿之小薄膜碎片及麵腔内之空 序(Aerosols)落於活化與鑛膜基材及薄膜表面；其四為創作大 面積電漿氣體均勻喷出構件、接地雜均勻分佈之電漿喷口盘 長線型前驅物均勻喷出機構等’以達到大面積之大氣電聚均句、 鍍膜之良好品質目的。因此，本發明之裝置係可改善f用技術 之缺點，例如：鑛膜之電極易受污染’需經常清除其鐘膜而無 法作連續式生產，薄膜易受電極上脫落之碎片與空浮等污染， 使錢膜品質無法符合產錢㈣求；大面積賴不均勻，無法[s 13 201213602 符口產業，求；以及必須使用昂貴之電漿氣體如氦氣，而使生 產成本居1¾不下等四項重A缺點，以達到提高麵品質與降低 生產f本，並可達到連續生產及提高產率之目標。 絲上所述，本發明係一種無電極與薄膜污染之大面積大氣 電槳鑛膜裝置’可有效改善習用之種種缺點，除了可達到完全 避免電極内部;㈣驅物污染及鑛膜純被外部脫落之小薄膜 碎片π染外’並可達到大面積捲軸式基材之均勻鍍膜，適合作 捲轴式基材連續鑛膜生i，俾以達到提昇品質、增加產量與降 低成本之目的，進而使本發明之産生能更進步、更實用、更符 合使用者之所須，確已符合發明專辦請之要件，爰依法提出 專利申請。 惟以上所述者，僅為本發明之較佳實施例而已，當不能以 此限定本發日續施之細；故，凡依本發明申料利範圍及發 明說明書内容所作之簡單的等效變化與修飾，皆應仍屬本發明 專利涵蓋之範圍内。 【圖式簡單說明】 第1圖，係本發明之整體裝置結構示意圖。 第2A圖’係本發明垂直式平面型大面積氮氣大氣電漿電 極結構之短軸中心剖面示意圖。 第2B圖’係本發明垂直式平面型大面積氮氣大氣電漿電 極結構之長軸中心剖面示意圖。 第2 C圖’係本發明垂直式平面型大面積氮氣大氣電漿電 極結構之短軸侧邊剖面示意圖。 第2 D圖，係第2 A圖之長軸g-h剖面示意圖。 201213602 第3 A圖，係本發明電 意圖。 聚氣體均^出構件之氣孔配置示 第3 B圖， 段之c-d剖面示 意圖。Referring to Figure 5, it is the moving surface structure of the roll-type mineral film substrate of the present invention. Such as the lion: this (four) volume of the Lai New Zealand mobile mechanism 3 series by - can be bent to the substrate secret wire 3 基材, the substrate receiving reel 32, a distribution on the substrate discharge reel 31 and plasma activation a vertical substrate positioning shaft 33 above the area, a vertical substrate positioning shaft 34 disposed above the substrate receiving reel 31 and the plasma film area, and an infrared substrate of the new plasma surface area The heating element 3 5 or the like is composed. Please refer to the diagram of the planar electrode structure of the present invention with a plasma jet. As shown in the figure: the planar grounding electrode working system of the present invention comprises a metal plate 1 2 - a slurry discharge outlet array 1 2 partially distributed on the metal plate 12, at least 6 pieces are disposed on the plasma spray The outlet array 丄2 is partially localized with oxygen. She shouts (4) 1 2 3 and several radiances are provided on the metal plate 2 for one week, and are composed of the assembly of the grounded and sealed rectangular metal cavity 1 2 4 . Among them, the oxidized Ming ceramic tile 1 2 3 is attached to the metal plate of the tightly fitting groove as the oxidized fine; the 塾 塾 1 2 3 positioning machine Emperor and this oxidation _ film! 2 3 The height of the metal plate is highlighted by a distance of less than or equal to G6 mm (mm). IS] 12 201213602 j mentioned (4) mouth out. The array 122 is composed of at least two::: nozzles, each group of electrical outlets is laterally displaced by the number of venting ports corresponding to the positions of the corresponding orifices of the plasma nozzles. The plasma nozzle is arranged, and the position corresponding to the pore of the slurry nozzle is laterally displaced by the pores of the pores, and the diameter d of the pores of the mouth of each of the electric ports is i or 0.6, and the mouth of the horizontal array is The spacing is less than 3d, and the distance between the adjacent two rows of arrays of the nozzles σ is less than or equal to the distance between the first row of the group of electrical outlets _122 and the row of the mouth of the lower row of arrays is less than or Equal to 4d. It can be seen that the present invention has the following four main features, one of which is to create a very small pitch electrode structure, using a low-cost nitrogen gas as a plasma gas; = two is a creation-jet type electrode, and the power of Can (4) Decomposing the precursors used for the coating on the outside of the grounding electrode, so the inside of the electropolymerized electrode is not adhered and contaminated by the 2 precursors; the third is to create the active region of the vertical electrode and the substrate "mineral membrane area" to avoid the external electrode The small film fragments of the bribe and the aerosol in the cavity fall on the activation and mineral film substrate and the surface of the film; the fourth is to create a large-area plasma gas uniform ejection member, a ground-distributed plasma discharge plate The long-line type precursor is uniformly sprayed out of the mechanism to achieve a good quality of a large area of atmospheric electricity, and therefore, the apparatus of the present invention can improve the disadvantages of the technique of f, for example, the electrode of the mineral film is susceptible to Pollution 'requires frequent removal of its clock film and can not be used for continuous production. The film is easily contaminated by fragments and air floats on the electrode, making the quality of the money film incapable of conforming to the production of money (4) Uniform, can not [s 13 201213602 Fukou industry, seeking; and must use expensive plasma gas such as helium, so that the production cost is not equal to four major A shortcomings, in order to improve surface quality and reduce production, The goal of continuous production and improved productivity can be achieved. As described above, the present invention is a large-area atmospheric electric paddle film device without electrode and film contamination, which can effectively improve various disadvantages of the conventional use, except that the electrode can be completely avoided. Internally; (4) the pollution of the propellant and the pure film film π dyed by the outer film, and can achieve uniform coating of large-area roll-type substrate, suitable for continuous film casting of the roll-type substrate, The purpose of improving quality, increasing production and reducing costs, and thus making the invention more progressive, more practical, and more in line with the needs of users, has indeed met the requirements of the invention, and filed a patent application according to law. The above is only the preferred embodiment of the present invention, and it is not possible to limit the details of the present invention; therefore, the scope of the invention and the contents of the invention description are The simple equivalent changes and modifications should be within the scope of the present invention. [Simplified description of the drawings] Fig. 1 is a schematic view showing the structure of the whole device of the present invention. Fig. 2A is a vertical plane of the present invention. Schematic diagram of the short-axis center of the large-area nitrogen atmospheric plasma electrode structure. FIG. 2B is a schematic view of the long-axis center of the vertical planar large-area nitrogen atmospheric plasma electrode structure of the present invention. FIG. 2C is a schematic view of the present invention. Schematic diagram of the short-axis side profile of the vertical planar large-area nitrogen atmospheric plasma electrode structure. Figure 2D is a schematic diagram of the long-axis gh profile of Figure 2A. 201213602 Figure 3A is the electrical intent of the present invention. The arrangement of the pores of the gas extraction member is shown in Fig. 3B, and the cd section of the section is schematic.
係第4 A ®巾長線魏簡散均自混合段之㈠ 剖面示意圖。 第3B圖，係第3A圖之a·,剖面示意圖。 第3C圖，係第3相中氣體擴散均勾現合 第5圖，係本發明之捲軸式鍍膜基材移動機構架構示意圖。 第6圖’係本發明具電漿喷口之平面型接地電極結構示意 第7圖，該習用之大氣電漿鍍膜鍍膜裝置結構示意圖。 第8圖’該另一習用之大氣電漿鍍膜鍍膜裝置結構示意圖。 【主要元件符號說明】 (本發明部分） 本装置10 0 垂直式平面型大面積氮氣大氣電漿活化電極la 垂直式平面型大面積氮氣大氣電漿鍍膜電極lb 平面型高電壓電極11 金屬平板111 氧化鋁陶瓷介電板112 塑膠冷卻水槽113 高電壓連接棒114 15 201213602 高電壓絕緣環115 冷卻水流動通道116 平面型接地電極12 金屬板121 電漿喷出口陣列122 氧化鋁陶瓷墊片12 3 裝配孔12 4 長方形金屬腔體13 _ 冷卻水入口131 冷卻水出口13 2 電漿氣體進氣管13 3、13 4 電漿氣體均勻喷出構件14、15 外殼1 4 1 進氣口14 0 二等分氣體分配隔板14 2 四等分氣體分配隔板14 3 • 八等分氣體分配隔板144 十六等分氣體分配隔板14 5 電漿氣體擴散均勻混合段14 6 電漿氣體喷口14 7 高電壓絕緣板14 8 氣體引導板14 9、15 0 高電壓電源5a與5b 長線型前驅物均勻喷出機構2 外殼2 0 16 201213602 進氣口 2 1 前驅物產生單元2 01 二等分氣體分配隔板2 2 出氣孔2 21、2 2 2 氣體隔離板2 2 3 四等分氣體分配隔板2 3 出氣孔231、232、233、234 氣體隔離板2 35、236、237 g 八等分氣體分配隔板2 4 十六等分氣體分配隔板2 5 長線型氣體擴散均勻混合段2 6 長線型氣體喷口 2 7 捲軸式鍍膜基材移動機構3 基材出料捲軸31 基材收料捲轴3 2 電漿活化區垂直式基材定位轴3 3 • 電漿鍍膜區垂直式基材定位軸34 基材加熱元件3 5 負氣壓鍍膜腔體4 抽氣口 4 1 抽氣單元4 2 出氣孔4 21、4 2 2 氣體隔離板4 2 3 出氣孔4 31、432、433、434 氣體隔離板4 35、436、43 7 17 201213602 (習用部分） 習用裝置5 大氣電漿源51、5 2 電極51a、51b、52a、52b _ 霧化裝置53 . 捲筒 5 4、5 5、5 6 電漿氣體進氣口 5 7 習用裝置6 φ 高壓金屬電極310 接地金屬電極3 2 0 兩頻率射頻電源3 3 0 絕緣外罩3 5 0 電漿氣體均勻分配板3 6 2 鍍膜前驅物均勻分配板3 6 4 鑛膜前驅物喷口 P1 電漿及被電漿分解後之鍍膜前驅物喷口 P2 • 電漿氣體入口 P3 出氣孔P4 鍍膜前驅物導管S4 電漿氣體均勻擴散通道S5It is a schematic diagram of the section (1) of the 4th A ® towel long-line Wei Jiansan self-mixing section. Fig. 3B is a schematic view of a section of Fig. 3A. Fig. 3C is a schematic diagram showing the structure of the moving mechanism of the roll-type coating substrate of the present invention, which is a schematic diagram of the gas diffusion in the third phase. Fig. 6 is a schematic view showing the structure of a planar ground electrode with a plasma jet according to the present invention. Fig. 7 is a schematic view showing the structure of the conventional atmospheric plasma coating coating device. Figure 8 is a schematic view showing the structure of another conventional atmospheric plasma coating coating device. [Description of main components] (Invention part) This device 10 0 vertical flat type large area nitrogen atmospheric plasma activation electrode la vertical flat type large area nitrogen atmospheric plasma coating electrode lb flat type high voltage electrode 11 metal plate 111 Alumina ceramic dielectric board 112 Plastic cooling water tank 113 High voltage connection rod 114 15 201213602 High voltage insulation ring 115 Cooling water flow channel 116 Planar ground electrode 12 Metal plate 121 Plasma spray port array 122 Alumina ceramic gasket 12 3 Assembly Hole 12 4 Rectangular metal cavity 13 _ Cooling water inlet 131 Cooling water outlet 13 2 Plasma gas inlet pipe 13 3, 13 4 Plasma gas uniform ejection member 14, 15 Housing 1 4 1 Air inlet 14 0 Second class Sub-gas distribution partition 14 2 Quad-part gas distribution partition 14 3 • Eight-divided gas distribution partition 144 Sixteen equal-part gas distribution partition 14 5 Plasma gas diffusion uniform mixing section 14 6 Plasma gas nozzle 14 7 High voltage insulation board 14 8 gas guide board 14 9 , 15 0 high voltage power supply 5a and 5b long line type precursor uniform discharge mechanism 2 housing 2 0 16 201213602 air inlet 2 1 precursor generation unit 2 01 second class Gas distribution partition 2 2 air outlet 2 21, 2 2 2 gas separation plate 2 2 3 quarter gas distribution partition 2 3 air outlet 231, 232, 233, 234 gas insulation plate 2 35, 236, 237 g 八等Sub-gas distribution partition 2 4 hexadecimal gas distribution partition 2 5 Long-line gas diffusion uniform mixing section 2 6 Long-line gas nozzle 2 7 Roll-type coating substrate moving mechanism 3 Substrate discharge reel 31 Substrate receipt Reel 3 2 Plasma activation zone Vertical substrate positioning axis 3 3 • Plasma coating zone Vertical substrate positioning axis 34 Substrate heating element 3 5 Negative pressure coating chamber 4 Pumping port 4 1 Pumping unit 4 2 Out Air hole 4 21, 4 2 2 gas barrier plate 4 2 3 air outlet hole 4 31, 432, 433, 434 gas insulation plate 4 35, 436, 43 7 17 201213602 (conventional part) conventional device 5 atmospheric plasma source 51, 5 2 Electrode 51a, 51b, 52a, 52b _ atomizing device 53. Reel 5 4, 5 5, 5 6 plasma gas inlet 5 7 conventional device 6 φ high voltage metal electrode 310 grounding metal electrode 3 2 0 two frequency RF power supply 3 3 0 Insulating housing 3 5 0 Plasma gas even distribution plate 3 6 2 Coating precursor uniform distribution plate 3 6 4 Mineral film precursor Spout P1 Plasma and coating precursor nozzle after decomposition by plasma P2 • Plasma gas inlet P3 Air outlet P4 Coating precursor conduit S4 Plasma gas uniform diffusion channel S5