201208145 六、發明說明： 【發明所屬的技術領域】 本發明係關於波長轉換元件、具有波長轉換元件之光 電組件及製造波長轉換元件之方法。 【先前技術】 發光二極體（LED)於窄波長範圍内產生光，該波長範 圍造成單色光（monochromatic light)的顯現。為了顯現出 多色光或彩色光，習知技術係於LED的下游（d〇wnstream) 設置染料（d y e )，該染料能夠將一些該L E D所發射的光轉換 成為其他波長的光。藉由將經過轉換的光與該LED主要發 射的光進行疊合’能夠得到顯現出多色光或彩色光之更寬 的波長頻譜。 染料可例如與密封材料（encapsulating material)共 同設置於已經接置且經電性連接的LED上。也了解到，設 置預先製造的染料板（dye plate)包括直接於LED晶片上形 成染料。於習知技術上，由於LED的主要發光表面係由其 上方侧（upper side)所形成，故此種染料板具有與該LED 的上方側尺寸匹配的尺寸，並且假設為二維且平面的形式。 具體而言，此類染料板的邊緣長度符合LED晶片的上方側 的邊緣長度。此類染料板可藉由例如網版印刷（screen printing)進行製造，藉由此種製造方法僅能夠製造平坦的 染料板。習知的染料板係藉由黏著層牢牢固定至晶片，該 黏著層典型上具有數微米的厚度。當採用此類染料板時， 已經發現到主要發射自LED的轄射線（radiation)可於黏 4 95228 201208145 著層的側向邊緣（lateral edge)被耦合輸出（〇utCOUpie)， 而不會通過設置於該LED晶片下游的染料板，且藉此被部 分地轉換。在習知的LED中亦可進一步觀察到發射自主動、 光產生區域的光亦可於該LED晶片的側向邊緣被耦合輸 出。因此，由於上述主要產生自LED晶片的光的侧向麵合 輸出，使得在具有下游染料板的習知LED晶片的空間輻射 線圖案中可觀察到单色周圍區域（monochromatic peripheral region)，且高度可見地圍繞由該染料板所產 生之實際所欲的、合光。在具有染料板的習知發光二極體 晶片中，混合光的品質在相對於法線的較大發射角度下可 能因此嚴重衰減。 此問題可藉由例如利用不透明材料及（較佳的是）反 射性材料覆蓋LED晶片的側面（Side face)而避免，、使得光 能夠不再直接經由該LED的側面發射。然而，如此一來必 須於製造此LED時增加額外的製程步驟，因而增加製 雜度與生產成本。再者，於LED勤提供此鋪蓋或鏡面 加工（mirrored finish)無法避免主要產生自該LED的光 經由該L E D晶片與該染料板間的黏著層的側面被輕合輸 出。 【發明内容】 本發明的某些實施例之至少一個目的係提供一種波 長，換7C件，能夠避免至少一些先前所述的缺點。至少一 些實施例的進一步目的係提供具有波長轉換元件的光電組 件。至少一些實施例的其他目的係提供用於製造波長轉換 95228 5 201208145 元件的方法。 方法=;!: 立項之技術特徵的標的與 !法可達到上4目的。此外，本發明的標的與方法的有利 貫施例與進—步發展係揭露於申請專利範_屬項中，且 藉由以下說明書内容與附加圖式明確而充分揭露。 括』發明一個實施例的波長轉換元件包 括基體㈣與嵌人該基體材料中的波長 Π:成為具有主要延伸平面的層，且包括L於= 要：:申：：而突出進入該波長轉換元件的井，該井係由至 夕局縣奴邊框沿著該主要延伸平面所圍繞。換言之， 該波長轉換元件可採取具有主纽伸平_平面層_赃 layer)的形式。料可㈣進人該層，使得該波長轉換元 件在垂直於該主要延伸平面的方向上在該井的區域中所具 有的厚度相在至4局部環繞該井的邊框的區域中所具有 的厚度更加縮減。 本發明的波長轉換元件係採用自我支撐 (self-supporting)的架構^於本說明書中，自我支樓意指 該波長轉換元件可獨立於半㈣4錢线行製造，於 該半導體晶片上可放置該波長轉換元件，並且容置及保留 其形狀而㈣於該半導體晶片。本說明書所述的波長轉換 凡件在這方面不同於習知的密封方法以及藉由此類方法所 製造的含_密封產品，本發_波長轉換元件係直 置於半導體晶片上方才成型，且適配於該半導體晶片的步 狀0 夕 6 95228 201208145 與習知的二維（例如平面）的染料板相比較，本說明書 所述的波長轉換元件包括具有三維結構的井以及至少局部 .環繞該井的邊框。 根據本發明實施例的一種用於製造波長轉換元件的 方法具體而言係藉由三維成型製程（moulding pr〇cess)進 行。此夠藉由此類二維成型製程將自我支撐波長轉換元件 製造成為如同具有該井以及至少局部環繞該井的邊框之 層。相較於習知藉由例如網版印刷製造的二維與平面染料 板，能夠藉由本發明所述方法利用三維成型製程製造波長 轉換元件，該波長轉換元件包括井以及三維結構與形狀。 具體而言，較有利的三維成型製程係壓縮成型 (compression moulding)。在該波長轉換元件具有基體材 料與嵌入該基體材料中的波長轉換材料的情況下，此處欲 成型的材料係位於模具（mould)中，包括欲製造的波長轉換 元件的負拓印（negative impressi〇n)。在熱及/或壓力的 作用下’欲成型的材料轉換成為所欲的波長轉換元件形狀。 替代上述的壓縮成型，該三維成型製程亦可例如藉由 射出成型（injection moulding)或轉注成型（transfer moulding)實施。 具體而言，壓縮成型可具有幾近沒有或較佳的情況是 完全沒有浪費材料之優點。再者，由於基體材料中之波長 轉換元件非所欲的不均勻或者分佈不均，故相較於例如網 版印刷法，利用壓縮成型能夠達到較低程度的色彩位置散 射（colour location scatter)。相較於其他方法（例如： 95228 7 201208145 網版印刷），藉由以下所進一步說明的切單方法以及所述的 分割技術有利於進一步達到較佳的邊緣品質。再者，相浐 於其他製造方法，藉由壓縮成型法可製造具有任何厚戶的 波長轉換元件 & 具體而言，該波長轉換元件宜構建為單件式（〇ne piece)。如此一來’意指该基體材料係形成為如同具有井 以及至少局部環繞該井的邊框之層，該環繞邊框連同包括 該井之層可藉由例如先前所述的方法製造為單件式。 藉由三維成型製程較佳可製造複數個波長轉換元件 的連續聯結件（contiguous association)。具體而言，這 意指可藉由三維成型製程製造具有主要延伸平面的層形薄 片（layer-shaped sheet)，該薄片包括複數個井，其中， 各個井皆對應於用於個別波長轉換元件的井。於該等井之 間具有網（web) ’且在三維成型製程之後實施切單，使得在 切單之後’部分的網形成至少局部環繞該井的邊框，藉此 切單該聯結件形成複數個波長轉換元件。可藉由例如斷裂 (breaking)、劃線（scribing)、鑛、砂輪切割（abrasive wheel cutting)、雷射切割及/或水刀切割（waterjet cutting)或這些方法的組合繼續進行切單。 波長轉換材料可特別適用於至少局部吸收主要由半 導體晶片所產生的光（於本文中’亦指定為主要的輻射 =)並且將其發射作為次要轄射線，該次要輕射線的波長 π刀不同於§亥主要輕射線的波長範圍。該主要輻 射線與次要輻射線可包含-㈣多種波長及/或紅外光至 8 95228 201208145 紫外光波長範圍中的波長範圍，尤其是可見光波長範圍。 在這方面’社要輻射線的_及/或該次要輻射線的頻譜 .可為窄頻帶（narrowband)，也就是說，該主要輻射線及/曰 或該次要輻射線可包含單色的或接近單色的波長範圍。或 者’該主要輻射線的頻譜及/或該次要輻射線的頻譜亦可^ 寬頻帶（broadband)，也就是說，該主要輻射線及/或該次 要輕射線可包含彩色的波長範圍，.其中，該彩色的波長範 圍可包含連續頻譜或具有各種波長的複數個不連續頻譜^ 分。舉例而言，該主要輻射線可包含自紫外光至綠色光波 長範圍之波長範圍’同時該次要輻射線可包含自藍色光至 紅外光波長範圍之波長範圍^當兩者重疊時，較佳的情況 是，該主要輻射線與次要輻射線特別呈現出白色光。基於 此原因，該主要輻射線宜呈現藍色光，而該次要輻射線呈 現出黃色光，這是起因於該次要輻射線於黃色光波長範圍 内的頻5醤成为及/或綠色光與紅色光波長範圍内的頻譜成 分。或者’該波長轉換元件亦可將該主要輻射線完全轉換 成為次要輻射線，此為習知的”全轉換（full conversion)" 〇 於本發明中，波長轉換材料可包含下列材料的其中一 種或多種：稀土（^^6&1'1±)、鹼土金屬石榴石(^11^111^ earth metal garnet)(例如 YAG:Ce3+)、氮化物（nitride)、 氮化物矽酸鹽（nitridosilicate)、氮氧化矽（siOn)、氛化 矽（sialon)、鋁酸鹽（aluminate)、氧化物、鹵素填酸鹽 (halophosphate)、正矽酸鹽（〇rthosilicate)、硫化物 95228 9 201208145 (sulfide)、釩酸鹽（vanadate)、氣矽酸鹽（chlorosilicate；)。 再者，該波長轉換材料可額外地或者替代地包含有機材料 (organic material )，該有機材料係選自下列所組成之群 組.花（perylene)、苯並芘（benzopyrene)、香豆素 (coumarin)、玫紅（rh〇damine)、及偶氮染料（azo dye)。 該波長轉換元件可包含適當的混合物及/或上述波長轉換 材料的組合，作為嵌入該基體材料中的波長轉換材料。該 基體材料可包圍或包含該波長轉換材料或者經化學鍵接至 (chemically bonded to)該波長轉換材料。於本發明中， 該波長轉換材料宜均勻地分佈於該基體材料中。該波長轉 換材料可例如成型為顆粒，該等顆粒的尺寸小於或等於 100微米’而較佳的情況是尺寸大於或等於2微米且小於 或等於30微米。 該波長轉換元件可進一步包含透明基體材料，其中， 該波長轉換材料係經嵌入作為基體材料。該透明基體材料 可例如包含單體（monomer)、低聚物（oligomer)、聚合物 (polymer)以及相關的混合物、共聚物（cop〇iymer)、化合 物（compound)形式的玻璃（尤其是可壓縮成型的玻璃）、矽 氧烧（siloxane)、環氧化物（epoxide)、丙稀酸西旨 (aerylate)、曱基丙婦酸曱酉旨（methyl methacrylate)、酿 亞胺（imide)、碳酸鹽（carbonate)、胺曱酸乙酯（urethane) 或者其衍生物。舉例而言，該基體材料可包含或可為環氧 樹脂、聚曱基丙稀酸甲g旨（polymethyl methacrylate; PMMA)、聚碳酸鹽（polycarbonate)、聚丙稀酸酯 10 95228 201208145 (polyacrylate)、聚氨酯（p〇lyurethane)、石夕樹月匕 (silicone resin)，如聚矽氧烷或其混合物。 曰 於較佳實施例中，該基體材料係含有矽樹脂或 脂所構成。有利的是’另-方面，歸功於錢脂的熱= 質（thermoplastic property)，可輕易地藉由三維成型製 程處理矽樹脂，另一方面，矽樹脂顯現出波長轉換元件所 需求的輻射線穩定度以及必要的光學性質（如透明）。 具體而言，形成該環繞邊框的基體材料可包含部分的 亥波長轉換材料。換έ之，該波長轉換材料可存在於整體 波長轉換元件巾，因此，也存在於包含該井的層中以及至 少局部環繞該井的邊框中。 s錢繞邊框可進一步完全圍繞該井。如此一來，意指 =、二邊框形成連續的框架（⑽tigu_斤㈣），該框架沿 著形成該波長轉換元件之層駐要延伸平面於所有侧邊上 圍繞該井。 u波長轉換元件可進一步包含切口，該切口垂直於該 主要延伸平面而突出穿過該波長轉換元件。於本發明中， °玄切口可採用洞（hole)、孔（bore)、或開口（opening)的形 式於本發明中，該切口可設置於該環繞邊框内，使得該 /在^井之區域中突出穿過該波長轉換元件之層。該開 亦可進步設置於該環繞邊框的區域中，由於該邊框為 A切口所中斷’故使得部分的該邊框可能消失。舉例而言， 二波長轉換元件可能呈現四角形，其中，該切卩係、設置於 違波長轉換元件的轉角區...域中以及該邊框的區域中，使得 11 95228 201208145 該轉角自該環繞邊框消失。如稍後將進一步詳述者，此切 口可能適於透過該波長轉換元件接觸半導體晶片。 具體而§，根據本發明一個實施例所述的光電組件包 含根據上述一個或多個實施例所述之波長轉換元件。該光 電組件復包含發光半導體晶片，該發光半導體晶片上設置 有該波長轉換元件。於說明書中，該半導體晶片包含上方 侧，該上方側形成該半導體晶片的至少局部光耦合輸出 面。該上方側係設置於該波長轉換元件的井中，且於側向 上被該波長轉換元件的邊框所圍繞，因此環繞該井之邊框 沿著該波長轉換元件的主要延伸平面圍繞該上方侧。焊接 層（bonding layer)係設置於該半導體晶片的上方侧與該 波長轉換元件之間，該焊接層係完全位於該井内。換言之， 該焊接層的厚度可能小於該波長轉換元件的井之深度，且 因而小於該邊框自該井之底面的高度。換言之，該焊接層 可能並未突出該井外。 由於該焊接層係完全設置於該井中，故透過該半導體 晶片與該波長轉換元件之間的焊接層的侧面耦合輸出的光 係被耦合進入該邊框（其至少局部環繞該井），其中，該光 至少部分被轉換。因此，在本發明所述的光電組件中，可 有利地避免經由與前述習知染料板有關的黏著層之側面的 直接光耦合輸出的非所欲效應。如此一來，能夠至少局部 降低習知LED中之空間輕射線圖案（spatial radiati〇n pattern)中非所欲的單色周圍區域。 在遠離該半導體晶片的上方側上，該波長轉換元件包 12 95228 201208145 含外部表面（outer surface)，該外部表面沿著該波長轉換 元件的主要延伸平面延伸，且其尺寸大於該半導體晶片的 : 上方側之尺寸。於該井中，該波長轉換元件可包含内部表 面（inner surf ace)，該内部表面沿著該主要延伸平面相對 於該外部表面的尺寸實質上與該半導體晶片的上方側之尺 寸相匹配。具體而言，意指該外部表面的尺寸（例如：邊緣 長度）大於該半導體晶片的上方側之對應尺寸不超過10% (較佳的情況是不超過5%，特別較佳的情況是不超過4%)。 該井的形狀可進一步適配於該半導體晶片的上方側 之形狀。具體而言，意指該半導體晶片的上方侧具有三維 凸起形狀，且該井具有三維凹陷形狀，且該三維凹陷形狀 適配於該半導體晶片之上方側上的三維凸起形狀。因此， 在該井中，該半導體晶片可以實質適配的方式接置於其上 方侧上，使得該井内形成有間距（介於該波長轉換元件的邊 框與該半導體晶片中鄰接該上方側的至少一個側面之 間），該間距不超過沿著該上方側之主要延伸平面之尺寸的 10% (較佳的情況是不超過5%，特別較佳的情況是不超過 4%)。於本說明書中，該半導體晶片的上方側上可具有例如 矩形或方形上方側，且於該上方侧的區域中，可為立方或 截斷的圓錐形或截斷的金字塔形結構。換言之，於該上方 侧的區域中，該半導體晶片可包含垂直於該上方側延伸或 傾斜於該上方側延伸的側面，於後者的情況下，該半導體 晶片可被指定為具有"凸形（mesa)"邊緣。 舉例而言，該半導體晶片可採用具半導體層序列之發 13 95228 201208145 光二極體的形式’該半導體層序列具有主動、光產生區域， 且以砷化物、磷化物及/或氮化物化合物為基礎。此類半導 體晶片為所屬技術領域中具有通常知識者所習知.，不於本 說明書進一步詳述。 具有該半導體晶片與該波長轉換元件的光電組件可 進一步例如設置於載體上及/或設置於殼體（h〇using)中， 且可藉由電性端子（例如：經由導線框架（lead frame))進 行電性接觸。 該半導體晶片可進一步包含光產生區域，該光產生區 域係設置於該波長轉換元件的井中。具體而言，這意指該 波長轉換元件的邊框（至少局部環繞該井）具有一高度，使 得一旦該波長轉換元件已經置於該半導體晶片上之後，則 該半導體晶片的側面至少局部重疊，使得該光產生區域亦 至少局部重疊。如此一來，能夠有利地防止光經由該半導 體晶片的側面自該半導體晶片直接耦合輸出。於本說明書 中所述的光電組件中，亦能夠使得此側向耦合輸出的光耦 合進入該波長轉換元件的邊框，其中，可藉由嵌入該邊框 的波長轉換材料至少局部轉換該光。如此一來，相較於僅 具有平面染料板（planar dye plate)設置於其上方側上的 習知發光二極體而言，能夠有利地避免在該光電組件的空 間輻射線圖案的周圍區域中發生非所欲的色彩變化（colour change) 0 再者，該波長轉換元件可包含如前所述的切口，該切 口可設置於該半導體晶片的上方側之上方，且係設置於該 14 95228 201208145 半導體晶片的接點區域中。換言之，透過該切口，可透過 該波長轉換元件存取該半導體晶片的接點區域（例如：其表 • 面）’使得導線接觸（例如：焊接接點）可透過該波長轉換元 件存取該半導體晶片。該光電組件可進一步包含焊接導線， 該烊接導線係透過該切口連接至該半導體晶片的接點區 域。於本說明書中，該接點區域可設置於該半導體晶片的 上方側的邊框區域中，或者可設置於該半導體晶片中遠離 該邊框的上方側的中央區域中’該切口因此可設置於邊框 區域中，具體而言，係設置於環繞邊框區域中，或者設置 於該波長轉換元件的并内的中央區域中。 可例如藉由三維成型製程製造該切口。或者，—旦已 經製造波長轉換元件或複數個波長轉換元件的聯結件^ 後，亦可藉由例如雷射剝蝕成型該切口。如此一來，能夠 有利於藉由-種及相同的三維成型製程來製造複數個= 轉換7G件，其中’根據所採用的半導體晶片，可接著將該 切口個別引進該波長轉換元件中。 該焊接層可進-步含有石夕樹脂，藉此該焊接層相對於 由該=導體B曰片所產生的主要輻射線可顯現出更高的輕射 線穩定度，以及必要的光學性質，如透明度。 本發明所述的波長轉換元件與本發明所述在半導體 晶月上具有波長轉換元件的光電組件可利於使用在例如汽 車、工業、電子應用、照明、醫療、運輸、電腦農置及/ 或投衫應用。具體而言，本發明所述的波長轉換元件與光 電組件尤其適於需要在整體空間輕射線圖案上（包含該輻 95228 15 201208145 射線圖案的周圍區域）具有均 均勻光發射之應用。 勻光顯現及色彩顯現的最大 【實施方式】 第1A圖至第id圖 轉換元件1物卜據實施難造波長 的剖面圖。第㈣二：中第^ Λ ^ 丁弟1C圖中沿者剖面DD的剖面圖。 製仏波長轉換元件1的第-方法步驟中，其中嵌入 有波長轉換材料之基體材料係藉由三 維成型製程（於本示範實施例中係壓縮成型製程）而成型， 以產生聯結件（ass〇c：iatic)n)4(顯示於第u及ib圖）。於 本示範實施例中，基體材料係矽樹脂（siUc〇ne)(尤其適合 壓縮成型）’而波長轉換材料可為先前所述的一種或多種波 長轉換材料。波長轉換材料的選定係以該波長轉換元件的 後續用途以及尤其疋包含該波長轉換元件1之光電組件所 欲的光發射與所欲的色彩顯現為基礎。藉由三維成型製程 可使得聯結件4為自我支撐。 如第1A與1B圖所示，聯結件4係形成為具有主要延 伸平面9的層，於所示實施例中，井10係沿著該主要延伸 平面9設置，以正規、類似矩陣的配置方式彼此相鄰接。 如圖所示，井10垂直於主要延伸平面9延伸進入基體材料 的層，而嵌入於其中的波長轉換材料形成聯結件4。包圍 井10之網12係設置於該等井10之間。 純粹舉例而言，聯結件4於網12的區域中的厚度大 約為0. 16毫米，而於井10的區域中的厚度大約為0. 11 95228 16 201208145 亳米，使得該等井在各種情況下垂直於該聯結件的主要延 伸平面9具有0.05毫米的厚度。各個井10皆為方形的， 該等井10的形狀僅為例示且係由欲設置於經完成的波長 轉換元件1上的半導體晶片之形狀所決定。於所示的示範 實施例中，各個井的邊緣長度皆為大約1. 04毫米，該等井 的轉角係圓形且半徑為0. 01毫米，如此有助於藉由三維成 型製程來成型該等井。於各種情況下，兩個鄰近的井10 之間的網12沿著主要延伸平面9具有寬度0. 215毫米，使 得直接鄰接的兩個井10的對應邊緣相互間隔1. 255毫米。 於第1C圖與第1D圖所示的進一步方法步驟中，沿著 井10之間的網12切單（singulate)聯結件4。此切單製程 可藉由例如斷裂（break)、劃線（scr ibe)、鑛、砂輪切割、 雷射切割、水刀切割或上述各者之結合實施。 第1C圖與第1D圖顯示來自以此方式所製造的複數個 波長轉換元件的其中一個波長轉換元件1。根據上述說明 書内容，波長轉換元件1包含基體材料，於該基體材料中 嵌·入有波長轉換材料^該基體材料係形成為具有主要延伸 平面9的層且包含垂直於該主要延伸平面9突出進入該波 長轉換元件1的井10。由於聯結件4係沿著網12被切單， 故波長轉換元件1現在具有邊框11，該邊框11沿著主要 延伸平面9至少部份圍繞該井10，於所示實施例中，甚至 完全圍繞該井10。未完全環繞的邊框11的一個範例係如 第4圖所示。 利用三維成型製程（於所示的示範實施例中係採用壓 17 95228 201208145 縮成型），可製造立體、自我支撐的波長轉換元件l，該波 長轉換元件1包含在形成該波長轉換元件之整個層中嵌入 基體材料中的波長轉換材料，尤其亦包含嵌入圍繞該井10 的邊框11中的波長轉換材料。 應理解到，示範實施例中所示垂直於主要延伸平面9 的井之矩形剖面係純粹作為範例。由進一步圖式所示的示 範實施例中亦可清楚了解到，該井的形狀宜符合半導體晶 片的上方側的形狀，該半導體晶片上放置有波長轉換元件 1。倘若此類半導體晶片例如包含傾斜凸形邊緣（oblique mesa edge)形式之傾斜侧面（如所屬技術領域中具有通常 知識者所習知），則適於讓該半導體晶片的波長轉換元件1 也宜包含梯形剖面，該剖面垂直於主要延伸平面9往下傾 斜變窄進入井。倘若半導體晶片例如包含矩形的或偏離四 角形的上方側，則適於該半導體晶片的波長轉換元件1的 井10沿著主要延伸平面9亦具有對應該井10之形狀。 第2圖顯示光電組件5之示範實施例，該光電組件5 包含如先前示範實施例所述的波長轉換元件1。波長轉換 元件1係設置於發光半導體晶片2的上方側20上。發光半 導體晶片2包含基板21，於該基板21上放置有具光產生 區域23的半導體層序列。於所示實施例中，該半導體晶片 2係具有載體基板形式之基板21的薄膜半導體晶片’ 在適當的生長基板上磊晶生長之後，半導體層序列22(採 用蟲晶層序列之形式）係轉移至該基板21上’該生長基板 已經局部或完全移除。 18 95228 201208145 具體而言’薄膜半導體晶片係以下列一個或多個特徵 作區別： 4 -反射層（reflective layer)係舖設或形成於產生輻 射線之蟲晶層序列中面向載體基板的第一主要面（ma j or face)上，該反射層將該磊晶半導體層序列中所產生的一部 份電磁輻射線反射回到該磊晶半導體層序列（未圖示）； -該磊晶層序列的厚度約在20微米或更小，更具體而 言，係大約5微米至1〇微米的範圍；以及 -該磊晶層序列含有至少一層半導體層，該半導體層 的至少一個面包含有混合結構（intermiXing structure)，該混合結構理想上於該磊晶層序列中造成光 的約略遍歷分佈（ergodic distribution)，亦即，光呈現 出盡可能為遍歷隨機（ergodically stochastic)的散射行 為。 薄膜發光二極體晶片的基本原理係描述於例如I.201208145 VI. Description of the Invention: TECHNICAL FIELD The present invention relates to a wavelength conversion element, a photovoltaic device having the wavelength conversion element, and a method of manufacturing the wavelength conversion element. [Prior Art] Light-emitting diodes (LEDs) generate light in a narrow wavelength range, which causes the appearance of monochromatic light. In order to visualize polychromatic or colored light, conventional techniques provide a dye (d y e ) downstream of the LED, which is capable of converting some of the light emitted by the L E D into light of other wavelengths. By superposing the converted light with the light mainly emitted by the LED, a wider wavelength spectrum exhibiting polychromatic light or colored light can be obtained. The dye may be disposed, for example, with an encapsulating material on the LED that has been attached and electrically connected. It is also understood that the provision of a pre-fabricated dye plate includes the formation of a dye directly on the LED wafer. In the prior art, since the main light-emitting surface of the LED is formed by its upper side, such a dye plate has a size matching the size of the upper side of the LED, and is assumed to be in a two-dimensional and planar form. Specifically, the edge length of such a dye plate conforms to the edge length of the upper side of the LED wafer. Such a dye plate can be produced by, for example, screen printing, by which only a flat dye plate can be produced. Conventional dye sheets are firmly fixed to the wafer by an adhesive layer which typically has a thickness of a few microns. When such a dye plate is used, it has been found that the radiation mainly emitted from the LED can be coupled out (〇utCOUpie) at the lateral edge of the layer of the adhesive layer, without passing through the setting. The dye plate downstream of the LED wafer is thereby partially converted. It is further observed in conventional LEDs that light emitted from the active, light generating regions can also be coupled out at the lateral edges of the LED wafer. Therefore, due to the lateral face-to-face output of the light mainly generated from the LED wafer, a monochromatic peripheral region can be observed in the spatial radiation pattern of a conventional LED wafer having a downstream dye plate, and the height is high. Visiblely surrounding the actual desired, combined light produced by the dye plate. In a conventional light-emitting diode wafer having a dye plate, the quality of the mixed light may be severely attenuated at a large emission angle with respect to the normal. This problem can be avoided by, for example, covering the side face of the LED wafer with an opaque material and, preferably, a reflective material, so that light can no longer be emitted directly through the side of the LED. However, this necessitates an additional process step in the manufacture of this LED, thereby increasing the complexity and production cost. Furthermore, providing such a cover or mirrored finish on the LED cannot avoid the light mainly generated from the LED being lightly outputted through the side of the adhesive layer between the L E D wafer and the dye plate. SUMMARY OF THE INVENTION At least one object of certain embodiments of the present invention is to provide a wavelength, 7C piece that avoids at least some of the disadvantages previously described. A further object of at least some embodiments is to provide an optoelectronic component having a wavelength converting element. Other objects of at least some embodiments provide a method for fabricating a wavelength converted 95228 5 201208145 component. Method =;!: The standard and the method of the technical characteristics of the project can achieve the above four purposes. In addition, the advantageous embodiments and further developments of the subject matter of the present invention are disclosed in the patent application, and are fully disclosed by the following description and the accompanying drawings. The wavelength conversion element of the invention includes a substrate (4) and a wavelength Π embedded in the substrate material: a layer having a main extension plane, and including L at = to: The well is surrounded by the main extension plane along the border of the county. In other words, the wavelength conversion element can take the form of having a main-level planar layer. The material may be (4) entered into the layer such that the wavelength conversion element has a thickness in the region perpendicular to the main extension plane in the region of the well having a thickness in a region of 4 surrounding the frame of the well. More reduced. The wavelength conversion component of the present invention employs a self-supporting architecture. In the present specification, a self-supporting building means that the wavelength conversion component can be fabricated independently of a half (four) 4 money line, and the semiconductor wafer can be placed on the semiconductor wafer. a wavelength converting element, and accommodating and retaining its shape and (d) the semiconductor wafer. The wavelength conversion component described in this specification differs from the conventional sealing method in this respect as well as the sealing-containing product manufactured by such a method, the hair-wavelength converting component is formed directly above the semiconductor wafer, and Steps for adapting to the semiconductor wafer 6 00228 201208145 Compared to conventional two-dimensional (e.g., planar) dye plates, the wavelength conversion element described herein includes a well having a three-dimensional structure and at least partially surrounding the The border of the well. A method for fabricating a wavelength converting element according to an embodiment of the present invention is specifically carried out by a three-dimensional molding process (moulding pr〇cess). This enables the self-supporting wavelength converting element to be fabricated as a layer having the well and at least partially surrounding the frame of the well by such a two-dimensional forming process. The wavelength conversion element can be fabricated by a three-dimensional forming process including a well and a three-dimensional structure and shape by a method of the present invention as compared to conventional two-dimensional and planar dye sheets manufactured by, for example, screen printing. In particular, a more advantageous three-dimensional forming process is compression moulding. In the case where the wavelength converting element has a matrix material and a wavelength converting material embedded in the matrix material, the material to be formed here is located in a mold, including negative imprinting of the wavelength converting element to be fabricated (negative impressi) 〇n). The material to be formed is converted into the desired shape of the wavelength conversion element under the action of heat and/or pressure. Instead of the above compression molding, the three-dimensional molding process can also be carried out, for example, by injection molding or transfer moulding. In particular, compression molding can have few or no better advantages without the waste of material. Moreover, due to undesired unevenness or uneven distribution of the wavelength converting elements in the matrix material, a lower degree of color location scatter can be achieved by compression molding than, for example, screen printing. Compared to other methods (e.g., 95228 7 201208145 screen printing), the singulation method and the segmentation technique described further below are advantageous for further achieving better edge quality. Further, as compared with other manufacturing methods, a wavelength conversion element having any thicker can be manufactured by compression molding. In particular, the wavelength conversion element should be constructed as a one-piece piece. As such, it is meant that the matrix material is formed as a layer having a well and a frame at least partially surrounding the well, the surrounding bezel along with the layer comprising the well being fabricated in a single piece by, for example, the methods previously described. Preferably, a contiguous association of a plurality of wavelength converting elements can be produced by a three-dimensional forming process. Specifically, this means that a layer-shaped sheet having a main extension plane can be produced by a three-dimensional molding process, the sheet including a plurality of wells, wherein each well corresponds to an individual wavelength conversion element well. Having a web between the wells and performing a singulation after the three-dimensional forming process such that after singulation, the portion of the web forms a border at least partially surrounding the well, thereby singulating the joint to form a plurality of Wavelength conversion element. The singulation can be continued by, for example, breaking, scribing, ore, abrasive wheel cutting, laser cutting, and/or water jet cutting, or a combination of these methods. The wavelength converting material may be particularly suitable for at least partially absorbing light generated primarily by a semiconductor wafer (also designated herein as primary radiation =) and emitting it as a secondary ray, the wavelength of the secondary light ray It is different from the wavelength range of the main light rays of §Hai. The primary and secondary radiation may comprise - (iv) a plurality of wavelengths and/or infrared light to a wavelength range in the ultraviolet wavelength range of 8 95228 201208145, particularly in the visible wavelength range. In this respect, the spectrum of the radiation and/or the secondary radiation may be a narrowband, that is, the primary radiation and/or the secondary radiation may comprise a single color. Or near a single wavelength range. Or 'the spectrum of the primary radiation and/or the spectrum of the secondary radiation may also be broadband, that is, the primary radiation and/or the secondary light rays may comprise a range of wavelengths of color, Wherein the wavelength range of the color may comprise a continuous spectrum or a plurality of discontinuous spectra having various wavelengths. For example, the primary radiation may comprise a wavelength range from the ultraviolet to green wavelength range and the secondary radiation may comprise a wavelength range from the blue to the infrared wavelength range. The case is that the primary and secondary radiations in particular exhibit white light. For this reason, the primary radiation should preferably exhibit blue light, and the secondary radiation exhibits yellow light, which is caused by the frequency of the secondary radiation in the wavelength range of the yellow light and/or green light and Spectral components in the red wavelength range. Or 'the wavelength conversion element can also completely convert the main radiation into a secondary radiation, which is a conventional "full conversion". In the present invention, the wavelength conversion material can include the following materials. One or more: rare earth (^^6&1'1±), alkaline earth garnet (^11^111^ earth metal garnet) (eg YAG: Ce3+), nitride (nitride), nitride tantalate (nitridosilicate ), siOn, sialon, aluminate, oxide, halophosphate, 〇rthosilicate, sulfide 95228 9 201208145 (sulfide , vanadate, chlorosilicate; Further, the wavelength converting material may additionally or alternatively comprise an organic material selected from the group consisting of Groups of perylene, benzopyrene, coumarin, rh〇damine, and azo dye. The wavelength converting element may comprise a suitable mixture and/or The above wavelength conversion material Combining as a wavelength converting material embedded in the base material, the base material may surround or contain the wavelength converting material or be chemically bonded to the wavelength converting material. In the present invention, the wavelength converting material is preferably uniform. Distributed in the matrix material. The wavelength converting material can be formed, for example, into particles having a size less than or equal to 100 microns' and preferably having a size greater than or equal to 2 microns and less than or equal to 30 microns. The conversion element may further comprise a transparent matrix material, wherein the wavelength converting material is embedded as a matrix material. The transparent matrix material may, for example, comprise a monomer, an oligomer, a polymer, and related Mixture, copolymer (cop〇iymer), glass in the form of a compound (especially compressible glass), siloxane, epoxide, aerylate, Methyl methacrylate, imide, carbonate, ethyl citrate Urethane) or a derivative thereof. For example, the matrix material may comprise or may be an epoxy resin, polymethyl methacrylate (PMMA), polycarbonate, polyacrylate. 10 95228 201208145 (polyacrylate), polyurethane (p〇lyurethane), silicone resin, such as polyoxyalkylene or a mixture thereof. In a preferred embodiment, the matrix material is comprised of a resin or a resin. Advantageously, the 'other aspect' is due to the thermoplastic nature of the resin, which can be easily processed by a three-dimensional molding process. On the other hand, the enamel resin exhibits the radiation stability required for the wavelength conversion element. Degree and the necessary optical properties (such as transparency). In particular, the base material forming the surrounding bezel may comprise a portion of the self-wavelength converting material. Alternatively, the wavelength converting material can be present in the overall wavelength converting element, and therefore also in the layer containing the well and at least partially surrounding the well. The money around the border can further completely surround the well. Thus, meaning =, the two frames form a continuous frame ((10) tigu_(4)), which surrounds the well along all of the sides along the plane in which the layers of the wavelength conversion element are formed. The u-wavelength converting element may further comprise a slit that protrudes through the wavelength conversion element perpendicular to the main extension plane. In the present invention, the sinuous incision may be in the form of a hole, a bore, or an opening, and the slit may be disposed in the surrounding frame so that the area is The layer protruding through the wavelength conversion element. The opening can also be improved in the area of the surrounding frame, and the frame may be partially broken due to the interruption of the frame by the A slit. For example, the two-wavelength conversion element may exhibit a quadrangular shape, wherein the tangent system is disposed in a corner region of the wavelength-interpreting element and in the region of the bezel such that the corner is from the wraparound border. disappear. As will be described in further detail later, the slit may be adapted to contact the semiconductor wafer through the wavelength converting element. Specifically, §, the optoelectronic component according to one embodiment of the present invention includes the wavelength conversion element according to one or more embodiments described above. The photo-electric component further comprises a light-emitting semiconductor wafer on which the wavelength conversion element is disposed. In the specification, the semiconductor wafer includes an upper side that forms at least a portion of the optical coupling output surface of the semiconductor wafer. The upper side is disposed in the well of the wavelength conversion element and is laterally surrounded by the bezel of the wavelength conversion element such that the bezel surrounding the well surrounds the upper side along the major extension plane of the wavelength conversion element. A bonding layer is disposed between the upper side of the semiconductor wafer and the wavelength conversion element, the solder layer being entirely within the well. In other words, the thickness of the solder layer may be less than the depth of the well of the wavelength converting element and thus less than the height of the bezel from the bottom surface of the well. In other words, the weld layer may not protrude outside the well. Since the solder layer is completely disposed in the well, a light system coupled through the side of the solder layer between the semiconductor wafer and the wavelength conversion element is coupled into the bezel (at least partially surrounding the well), wherein Light is at least partially converted. Therefore, in the photovoltaic module of the present invention, the undesired effect of direct optical coupling output through the side of the adhesive layer associated with the aforementioned dye plate can be advantageously avoided. In this way, it is possible to at least partially reduce the undesired surrounding area of the space in the spatial radiati pattern of the conventional LED. On the upper side away from the semiconductor wafer, the wavelength conversion element package 12 95228 201208145 includes an outer surface extending along a major extension plane of the wavelength conversion element and having a size greater than that of the semiconductor wafer: The size of the upper side. In the well, the wavelength converting element can include an inner surf ace having a dimension along the major extending plane relative to the outer surface that substantially matches the dimension of the upper side of the semiconductor wafer. Specifically, it means that the size of the outer surface (for example, the edge length) is greater than 10% of the corresponding size of the upper side of the semiconductor wafer (preferably, not more than 5%, and particularly preferably not exceeding 4%). The shape of the well can be further adapted to the shape of the upper side of the semiconductor wafer. Specifically, it means that the upper side of the semiconductor wafer has a three-dimensional convex shape, and the well has a three-dimensional concave shape, and the three-dimensional concave shape is adapted to a three-dimensional convex shape on the upper side of the semiconductor wafer. Therefore, in the well, the semiconductor wafer can be placed on the upper side thereof in a substantially fitting manner such that a pitch is formed in the well (at least one of the frame of the wavelength conversion element and the upper side of the semiconductor wafer adjacent to the upper side) Between the sides, the spacing does not exceed 10% of the dimension along the major extension plane of the upper side (preferably no more than 5%, particularly preferably no more than 4%). In the present specification, the upper side of the semiconductor wafer may have, for example, a rectangular or square upper side, and in the upper side region, may be a cubic or truncated conical or truncated pyramid structure. In other words, in the region on the upper side, the semiconductor wafer may include a side extending perpendicular to the upper side or inclined to the upper side, and in the latter case, the semiconductor wafer may be designated to have a convex shape ( Mesa)"Edge. For example, the semiconductor wafer may be in the form of a semiconductor layer sequence of 13 95228 201208145 photodiode. The semiconductor layer sequence has active, light generating regions and is based on arsenide, phosphide and/or nitride compounds. . Such semiconductor wafers are well known to those of ordinary skill in the art and are not described in further detail in this specification. The optoelectronic component having the semiconductor wafer and the wavelength conversion component can be further disposed, for example, on a carrier and/or in a housing, and can be electrically connected (eg, via a lead frame) ) make electrical contact. The semiconductor wafer may further comprise a light generating region disposed in the well of the wavelength converting element. In particular, this means that the bezel of the wavelength conversion element (at least partially surrounding the well) has a height such that once the wavelength conversion element has been placed on the semiconductor wafer, the sides of the semiconductor wafer at least partially overlap, such that The light generating regions also overlap at least partially. In this way, it is advantageously prevented that light is directly coupled out from the semiconductor wafer via the side of the semiconductor wafer. In the optoelectronic component described in this specification, the laterally coupled output light can also be coupled into the bezel of the wavelength conversion component, wherein the light can be at least partially converted by the wavelength converting material embedded in the bezel. In this way, compared to a conventional light-emitting diode having only a planar dye plate disposed on the upper side thereof, it can be advantageously avoided in the surrounding area of the spatial radiation pattern of the photovoltaic module. An undesired color change occurs. 0 Further, the wavelength converting element may include a slit as described above, and the slit may be disposed above the upper side of the semiconductor wafer and disposed at the 14 95228 201208145 In the junction area of the semiconductor wafer. In other words, through the slit, the contact region (eg, the surface thereof) of the semiconductor wafer can be accessed through the wavelength conversion component such that a wire contact (eg, a solder joint) can access the semiconductor through the wavelength conversion component. Wafer. The optoelectronic component can further include a solder wire through which the strap is connected to the contact area of the semiconductor wafer. In the present specification, the contact region may be disposed in a frame region on the upper side of the semiconductor wafer, or may be disposed in a central region of the semiconductor wafer away from the upper side of the frame. The slit may thus be disposed in the frame region. Specifically, it is disposed in the surrounding frame area or in a central area of the wavelength conversion element. The slit can be made, for example, by a three-dimensional forming process. Alternatively, the slit may be formed by, for example, laser ablation after the coupling member of the wavelength conversion element or the plurality of wavelength conversion elements has been fabricated. In this way, it is advantageous to manufacture a plurality of = 7G pieces by the same type and the same three-dimensional forming process, wherein the slits can be individually introduced into the wavelength converting element depending on the semiconductor wafer used. The solder layer may further comprise a lithium resin, whereby the solder layer may exhibit higher light ray stability and necessary optical properties relative to the main radiation generated by the = conductor B slab, such as transparency. The wavelength conversion element of the present invention and the photovoltaic module having the wavelength conversion element on the semiconductor crystal moon of the present invention can be advantageously used in, for example, automotive, industrial, electronic applications, lighting, medical, transportation, computer farming, and/or investment. Shirt application. In particular, the wavelength conversion elements and optoelectronic components of the present invention are particularly well suited for applications that require uniform uniform light emission over an overall spatial light ray pattern that includes the surrounding area of the ray 95228 15 201208145 ray pattern. Maximum of uniform light and color appearance [Embodiment] Fig. 1A to Fig. id A cross-sectional view of a conversion element 1 according to a difficult-to-create wavelength. (4) 2: The middle section of the ^ Λ ^ Dingdi 1C diagram in the section DD of the profile. In the first method step of the ytterbium-wavelength converting element 1, the base material in which the wavelength converting material is embedded is formed by a three-dimensional forming process (in the present exemplary embodiment, a compression molding process) to produce a joint (ass) c:iatic)n)4 (shown in the u and ib diagrams). In the exemplary embodiment, the base material is a silicone resin (especially suitable for compression molding) and the wavelength conversion material may be one or more of the wavelength conversion materials previously described. The selection of the wavelength converting material is based on the subsequent use of the wavelength converting element and, in particular, the desired light emission and desired color rendering of the optoelectronic component comprising the wavelength converting element 1. The coupling member 4 can be self-supporting by a three-dimensional forming process. As shown in Figures 1A and 1B, the coupling member 4 is formed as a layer having a primary extension plane 9, which in the illustrated embodiment is disposed along the primary extension plane 9, in a regular, matrix-like configuration. Adjacent to each other. As shown, the well 10 extends perpendicular to the main extension plane 9 into the layer of matrix material, while the wavelength converting material embedded therein forms the junction 4. A net 12 surrounding the well 10 is disposed between the wells 10. By way of example only, the thickness of the coupling member 4 in the region of the web 12 is about 0.16 mm, and the thickness in the region of the well 10 is about 0.11 95228 16 201208145 亳米, making the wells in various situations. The main extension plane 9 which is perpendicular to the coupling member has a thickness of 0.05 mm. Each of the wells 10 is square, and the shape of the wells 10 is merely exemplary and is determined by the shape of the semiconductor wafer to be placed on the completed wavelength conversion element 1. In the exemplary embodiment shown, each of the wells has an edge length of about 1.04 mm, and the corners of the wells are round and have a radius of 0.01 mm, which facilitates molding by a three-dimensional forming process. Wait for the well. 255毫米。 The webs 12 between the two adjacent wells 10 have a width of 0. 215 mm along the main extension plane 9, so that the corresponding edges of the two wells 10 directly adjacent to each other are spaced 1. 255 mm apart. In a further method step as shown in Figures 1C and 1D, the joint 4 is singulated along the web 12 between the wells 10. This singulation process can be carried out by, for example, breaking, scribing, ore cutting, laser cutting, water jet cutting, or a combination of the above. Figs. 1C and 1D show one of the wavelength conversion elements 1 from a plurality of wavelength conversion elements manufactured in this manner. According to the above description, the wavelength conversion element 1 comprises a base material in which a wavelength conversion material is embedded. The base material is formed as a layer having a main extension plane 9 and comprises a projection perpendicular to the main extension plane 9 The well 10 of the wavelength conversion element 1. Since the coupling member 4 is singulated along the web 12, the wavelength conversion element 1 now has a bezel 11 that at least partially surrounds the well 10 along the main extension plane 9, in the illustrated embodiment, even completely surrounding The well 10. An example of a frame 11 that is not completely wrapped is shown in Figure 4. Using a three-dimensional forming process (reduced in the illustrated exemplary embodiment using a press 17 95228 201208145), a stereoscopic, self-supporting wavelength converting element 1 can be fabricated, the wavelength converting element 1 being included in the entire layer forming the wavelength converting element The wavelength converting material embedded in the matrix material, in particular, also includes a wavelength converting material embedded in the bezel 11 surrounding the well 10. It should be understood that the rectangular cross-section of the well perpendicular to the main extension plane 9 shown in the exemplary embodiment is purely exemplary. It will also be apparent from the exemplary embodiments shown in the further figures that the shape of the well preferably conforms to the shape of the upper side of the semiconductor wafer on which the wavelength conversion element 1 is placed. If such a semiconductor wafer, for example, comprises a slanted side in the form of an oblique mesa edge (as is known in the art), the wavelength conversion element 1 of the semiconductor wafer is preferably also included. A trapezoidal profile that slopes down the main extension plane 9 and narrows into the well. If the semiconductor wafer comprises, for example, a rectangular or off-sided upper side, the well 10 of the wavelength conversion element 1 suitable for the semiconductor wafer also has the shape corresponding to the well 10 along the main extension plane 9. Figure 2 shows an exemplary embodiment of an optoelectronic component 5 comprising a wavelength conversion element 1 as described in the previous exemplary embodiment. The wavelength conversion element 1 is disposed on the upper side 20 of the light-emitting semiconductor wafer 2. The light-emitting semiconductor wafer 2 comprises a substrate 21 on which a semiconductor layer sequence having a light generating region 23 is placed. In the illustrated embodiment, the semiconductor wafer 2 is a thin film semiconductor wafer having a substrate 21 in the form of a carrier substrate. After epitaxial growth on a suitable growth substrate, the semiconductor layer sequence 22 (in the form of a sequence of insect layers) is transferred. To the substrate 21, the growth substrate has been partially or completely removed. 18 95228 201208145 Specifically, 'thin film semiconductor wafers are distinguished by one or more of the following characteristics: 4 - a reflective layer is laid or formed in the first main layer of the carrier substrate in the sequence of radiation-generating layers of radiation a reflective layer that reflects a portion of the electromagnetic radiation generated in the epitaxial semiconductor layer sequence back to the epitaxial semiconductor layer sequence (not shown); - the epitaxial layer sequence Thickness of about 20 microns or less, more specifically, about 5 microns to 1 micron; and - the epitaxial layer sequence contains at least one semiconductor layer, at least one of the layers of the semiconductor layer containing a hybrid structure ( IntermiXing structure), the hybrid structure desirably causes an approximate ergodic distribution of light in the epitaxial layer sequence, that is, the light exhibits ergodically stochastic scattering behavior as much as possible. The basic principle of a thin film light emitting diode chip is described, for example, in I.
Schnitzer 等人發表在 Appl. Phys. Lett. 63(16),18Schnitzer et al. published in Appl. Phys. Lett. 63(16), 18
October 1993,2174-2176的文獻中，所揭露的内容特此併 入本說明書以為參考。 於所示的示範實施例中，半導體層序列22的厚度大 約為6微米。於所示的示範實施例中，該半導體層序列μ 及光產生區域23係以氮化物化合物半導體材料為基礎，且 經組構使得半導體晶片2於操作中發射藍光作為主要輻射 線。波長轉換元件丨包含波長轉換材料，該波長轉換材料 將半導體晶片2的部分藍光轉換成為黃色及/或綠色與紅 95228 19 201208145 色光形式之次要輻射線，使得主要及次純射線的疊加 (superposition)能夠產生白色光。 或者，半導體晶片2及/或波長轉換元件1亦可產生 或將光轉換成為進一步或其他的色彩。 本實施例的上方側20形成半導體晶片的至少部分光 耦合輸出面。如此一來，意指光產生區域23所產生的光有 更大部份係經由該上方側自該半導體晶片2麵合輸出。然 而，此外，光亦可自半導體層序列22的侧面耦合輸出。波 長轉換元件1係設置於半導體晶片2的上方側2()上，使得 該上方侧20係位於井10内，且於側向上（沿著該波長轉換 π件1的主要延伸平面）被該波長轉換元件i環繞該井 的邊框11所圍繞。矽樹脂的焊接層3係位於上方側2〇與 波長轉換元件1之間的井10中，該焊接層3將該波長轉換 元件1連結至該半導體晶片2。於本實施例的焊接層3係 藉由喷注（jetting)而鋪設於上方側2〇上，且厚度為數微 米。 相較之下，習知的染料層（典型上係藉由網版印刷製 造）僅可製造成平面層的形式，不具有類似本實施例所述的 波長轉換元件1的井10形式的任何三維圖案化。相較於此 類習知的層形式之平面染料層（其具有與放置有此類染料 層於其上的半導體晶片相同的邊緣長度），波長轉換元件1 於达離半導體晶片2之侧上具有外部表面，該外部表面的 尺寸大於該半導體晶片2的上方侧20的尺寸。另一方面， 井10的尺寸、與外部表面相對之内部表面的尺寸以及環繞 95228 20 201208145 邊框11的尺寸係適配於半導體晶片2的上方側2〇，在該 上方側20具有三維凸起形狀（於示範實施例中顯示為立體 方形）的同時，該井10具有對應的凹陷形狀。如此一來， 可製造波長轉換元件1的井，以匹配半導體晶片2的上方 側，使得發生於該波長轉換元件丨與該半導體晶片2之間 僅有的間距不超過該半導體晶片2的上方側的尺寸的大約 10%，較佳的情況是不超過大約5%，且尤其較佳的情況是 不超過大約4%。 焊接層3的整體係完全設置於井1〇中，換言之，意 指該焊接層3的厚度係小於該井1〇的深度^如此一來，除 了讓焊接層3 5又置在半導體晶片2的上方侧2〇上的那一側 以外’該焊接層3於所有側邊上完全被波長轉換元件i所 覆蓋。如此一來，能夠防止半導體晶片2的光產生區域23 中所產生之未經轉換的光經由焊接層3的側面自光電組件 5被耦合輸出。因此’能夠有利於降低或甚至防止光電組 件5的工間輪射線圖案中的藍色周圍區域的習知⑽發生 不想要的效果。. 第3圖顯示光電組件6的進一步示範實施例，相較於 先前的示範實施例，該光電組件6包含波長轉換元件卜 該波長轉換元件1的井1〇的深度使得光產生區域23亦設 置於》亥井10中。舉例而言，井1〇亦可與整體半導體層序 列22重豐’並且例如亦更與一部分的基板21重疊。如此 -來’能夠有利於防止域生區域23所產生的主要光直接 自光電組件6 _合輸出而不會通過波長轉換元件卜可 95228 21 201208145 因此避免以相對於該半導體晶片2的上方側2〇的法線之大 發射角度（large emission angle)發射未經轉換的光，而 無需其他測量（例如，半導體晶片2的側面的鏡射 (mirroring)) ° 第4圖顯示光電組件7的進一步不範實施例，相較於 第2圖及第3圖的剖面圖式，第4圖係顯示示意的立體圖 式。在此，可根據其中一個先前的示範實施例組構波長轉 換元件卜半導體晶片2於上方側20的轉角區域中包含接 點區域29，該接點區域29係設置用於導線接觸（例如藉由 知接導線（未圖示.）），以用於電性接觸該半導體晶片2的上 方侧20。 波長轉換元件1在接點區域29的區域中具有切口 19, 該切口 19中設置有接點區域29。如此一來，儘管波長轉 換兀件1係設置於半導體晶片2的上方侧20上，但該半導 體晶片2能夠自上方側實施電性接觸。於所示的示範實施 例中，切口 19係形成於環繞邊框11的區域中，使得該環 繞邊柩11不致完全圍繞井1〇。 或者，接點區域29亦可設置於半導體晶片上，使得 波長轉換元件1的對應切口 19係設置於井1〇内，使得該 切口 19亦完全被邊框11所圍繞。在根據第1A圖及第1B 圖斤示的方法完成波長轉換元件1之後，可藉由例如雷射 剝餘製造切σ 19。或者，亦可在聯结件4經切單以形成個 別波長轉換元件1之前，也可將用於一個或多個波長轉換 兀件的井10先行引進該聯結件4中。歸功於本實施例所述 95228 22 201208145 轉換3=件的三維自1^㈣狀，其有利於使得切 接自欲發射的半導體晶片發射，其中二 實施該半導體晶片的上方側的接觸。.轉 本發-制的π書内容並非將 賴特徵及這些特徵的任何^反t本發明欲涵蓋任何新 各項特徵的任何組合，即便：牲：ί包含申請專利範圍中 利範圍或示範實施财日㈣寺徵或趣合並未於申請專 【圖式簡單說明】 步優點°圖式第^至4圖揭露本發明的進-步優=與較佳實施例以及進—步發展，其中： 弟1A至1D圖根據一钿_ μ & 元件之方法的示意圖；不財施例顯示製造波長轉換 件之2圖根據進一步的示範實施例顯示具有波長轉換元 仵之光電組件的示意圖；以及 第^與第4«根據進—㈣减實施讎 件的不意圖。 =示範實_及圖式中，於各種情況下，㈣或相同 、零件U有相同的元件符號。所⑽的元件及其 :寸比例原則上並非依據實際比例，而個別元件(例如： 且件、結構性％件及區域）可能以誇張的厚度或大小 ^會’從而更利於賴這些元件及/祕這些Μ更易於了 解。 【主要元件符號說明】 95228 23 201208145 1 波長轉換元件 2 半導體晶片 3 焊接層 4 聯結件 5 K 「光電組件 9 主要延伸平面 10 井 11 邊框 12 網 19 切口 20 上方側 21 基板 22 半導體層序列 23 光產生區域 29 接點區域 24 95228The disclosure of the documents of October 1993, 2174-2176 is incorporated herein by reference. In the exemplary embodiment shown, the semiconductor layer sequence 22 has a thickness of about 6 microns. In the exemplary embodiment shown, the semiconductor layer sequence μ and the light generating region 23 are based on a nitride compound semiconductor material, and are organized such that the semiconductor wafer 2 emits blue light as a main radiation in operation. The wavelength conversion element 丨 includes a wavelength converting material that converts part of the blue light of the semiconductor wafer 2 into a secondary radiation of yellow and/or green and red 95228 19 201208145 color light forms, superimposing the primary and secondary pure rays (superposition) ) can produce white light. Alternatively, semiconductor wafer 2 and/or wavelength converting element 1 may also produce or convert light into further or other colors. The upper side 20 of the present embodiment forms at least a portion of the optical coupling output face of the semiconductor wafer. As such, it means that a larger portion of the light generated by the light generating region 23 is outputted from the semiconductor wafer 2 via the upper side. In addition, light can also be coupled out from the side of the semiconductor layer sequence 22. The wavelength conversion element 1 is disposed on the upper side 2() of the semiconductor wafer 2 such that the upper side 20 is located within the well 10 and is laterally polarized (along the main extension plane of the π-piece 1 along the wavelength) by the wavelength The conversion element i is surrounded by the bezel 11 of the well. The solder layer 3 of the bismuth resin is located in the well 10 between the upper side 2 〇 and the wavelength conversion element 1, and the solder layer 3 connects the wavelength conversion element 1 to the semiconductor wafer 2. The solder layer 3 of the present embodiment is laid on the upper side 2 by jetting and has a thickness of several micrometers. In contrast, conventional dye layers (typically manufactured by screen printing) can only be fabricated in the form of planar layers, without any three-dimensional form of well 10 similar to wavelength conversion element 1 of the present embodiment. Patterned. In contrast to such conventional layered planar dye layers having the same edge length as the semiconductor wafer on which such a dye layer is placed, the wavelength converting element 1 has a side on the side away from the semiconductor wafer 2 An outer surface having a size greater than a dimension of the upper side 20 of the semiconductor wafer 2. On the other hand, the size of the well 10, the size of the inner surface opposite the outer surface, and the size of the frame 11 surrounding the 95228 20 201208145 are adapted to the upper side 2 of the semiconductor wafer 2, and the upper side 20 has a three-dimensional convex shape. While shown as a solid square in the exemplary embodiment, the well 10 has a corresponding concave shape. In this way, the well of the wavelength conversion element 1 can be fabricated to match the upper side of the semiconductor wafer 2 such that the only spacing between the wavelength conversion element 丨 and the semiconductor wafer 2 does not exceed the upper side of the semiconductor wafer 2. About 10% of the size, preferably no more than about 5%, and particularly preferably no more than about 4%. The entirety of the solder layer 3 is completely disposed in the well 1 , in other words, the thickness of the solder layer 3 is less than the depth of the well 1 such that the solder layer 35 is placed on the semiconductor wafer 2 again. Outside the side on the upper side 2', the solder layer 3 is completely covered by the wavelength conversion element i on all sides. As a result, it is possible to prevent unconverted light generated in the light generating region 23 of the semiconductor wafer 2 from being coupled out from the photovoltaic module 5 via the side surface of the solder layer 3. Therefore, it is possible to reduce or even prevent the conventional effect (10) of the blue surrounding area in the inter-wheel ray pattern of the photovoltaic module 5 from occurring an undesired effect. Fig. 3 shows a further exemplary embodiment of a photovoltaic module 6, which comprises a wavelength conversion element having a depth of a well of the wavelength conversion element 1 such that the light generation region 23 is also set, as compared to the previous exemplary embodiment. In "Haijing 10". For example, well 1 may also be heavier with integral semiconductor layer sequence 22 and, for example, also overlap with a portion of substrate 21. In this way, it can be advantageous to prevent the main light generated by the domain generation region 23 from being directly output from the photovoltaic module 6 without passing through the wavelength conversion element. 92528 21 201208145 Therefore avoiding the upper side 2 with respect to the semiconductor wafer 2 The large emission angle of the normal emits unconverted light without other measurements (for example, mirroring of the side of the semiconductor wafer 2). FIG. 4 shows further of the photovoltaic module 7 In the exemplary embodiment, FIG. 4 shows a schematic perspective view compared to the cross-sectional views of FIGS. 2 and 3. Here, the wavelength conversion element can be assembled according to one of the preceding exemplary embodiments. The semiconductor wafer 2 includes a contact region 29 in the corner region of the upper side 20, the contact region 29 being provided for wire contact (for example by A wire (not shown) is known for electrically contacting the upper side 20 of the semiconductor wafer 2. The wavelength conversion element 1 has a slit 19 in the region of the contact region 29, in which a contact region 29 is provided. In this manner, although the wavelength conversion element 1 is disposed on the upper side 20 of the semiconductor wafer 2, the semiconductor wafer 2 can be electrically contacted from the upper side. In the exemplary embodiment shown, the slit 19 is formed in the area surrounding the bezel 11 such that the looped edge 11 does not completely surround the well. Alternatively, the contact region 29 may be disposed on the semiconductor wafer such that the corresponding slit 19 of the wavelength conversion element 1 is disposed within the well 1 such that the slit 19 is also completely surrounded by the bezel 11. After the wavelength conversion element 1 is completed according to the method shown in Figs. 1A and 1B, the cut σ 19 can be produced by, for example, laser stripping. Alternatively, the well 10 for one or more wavelength conversion elements may be introduced into the coupling member 4 before the coupling member 4 is singulated to form the individual wavelength conversion elements 1. Thanks to the present embodiment, 95228 22 201208145 converts the three-dimensional shape of the 3= member into a shape which facilitates the emission from the semiconductor wafer to be emitted, wherein the contact of the upper side of the semiconductor wafer is performed. The contents of the π book are not intended to cover any feature of any of the features, even if the invention includes a range of benefits or exemplary implementation. The fiscal day (4) Temple sign or interesting merger is not in the application for a special description [step description] Steps Advantages Figure 2 to Figure 4 reveals the advantages of the present invention and the preferred embodiment and further development, wherein: BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1D are schematic diagrams showing a method of fabricating a wavelength conversion member according to a further embodiment of the invention, and a schematic diagram showing a photovoltaic module having a wavelength conversion element according to a further exemplary embodiment; ^ With the 4th «based on - (four) minus the implementation of the intent. In the demonstration _ and the diagram, in each case, (4) or the same, the part U has the same component symbol. The components of (10) and their ratios are not based on actual proportions in principle, and individual components (for example: and parts, structural parts and regions) may be exaggerated in thickness or size, which is more conducive to these components and / These tips are easier to understand. [Main component symbol description] 95228 23 201208145 1 Wavelength conversion element 2 Semiconductor wafer 3 Solder layer 4 Coupling member 5 K "Optoelectronic component 9 Main extension plane 10 Well 11 Frame 12 Net 19 Notch 20 Upper side 21 Substrate 22 Semiconductor layer sequence 23 Light Generation area 29 contact area 24 95228