TW201206943A - Polycyclic compound - Google Patents

Polycyclic compound Download PDF

Info

Publication number
TW201206943A
TW201206943A TW100107267A TW100107267A TW201206943A TW 201206943 A TW201206943 A TW 201206943A TW 100107267 A TW100107267 A TW 100107267A TW 100107267 A TW100107267 A TW 100107267A TW 201206943 A TW201206943 A TW 201206943A
Authority
TW
Taiwan
Prior art keywords
ring
ring structure
compound
atom
group
Prior art date
Application number
TW100107267A
Other languages
Chinese (zh)
Inventor
Yasuo Miyata
Mitsuhiro Matsumoto
Masao Yanagawa
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of TW201206943A publication Critical patent/TW201206943A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04Ortho-condensed systems
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/22Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00Other synthetic dyes of known constitution
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B69/00Dyes not provided for by a single group of this subclass
    • C09B69/008Dyes containing a substituent, which contains a silicium atom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

A polycyclic compound represented by formula (1) [wherein the ring structure C represents a benzene ring represented by formula (C1), a hetero[3,2-b]heteror ring represented by formula (C2), or a benzo[1,2-b:4,5-b']diheteror ring represented by formula (C3) (wherein P and Q independently represent a sulfur atom or the like); W, X, Y and Z independently represent a sulfur atom, N-(R15) or the like, wherein at least one residue selected from the group consisting of W, X, Y and Z represents N-(R15); the ring structures A and B independently represent an aromatic carbon ring or the like, wherein the ring structures A and B independently represent an aromatic hetero ring which may have a substituent when the ring structure C represents a benzene ring represented by formula (C1) and both X and Y represent N-(R15); and R15's independently represent an alkyl group or the like].

Description

201206943 六、發明說明: 【發明所屬之技術領域】 本發明係有關多環式化合物。 【先前技術】 有機電晶體係作爲電子報紙、大畫面平板面板顯示器 等之元件用。該類有機電晶體係由有機半導體活性層、基 板、絕緣層、電極等之構件構成。已知之賦予有機半導體 活性層之化合物如’ J. Appl. Phys. 2002,92,5259所記載 之戊省’又係將真空蒸鍍戊省而得之薄膜使用於有機半導 體活性層。 【發明內容】 發明之揭示 本發明係提供, Π]—種多環式化合物,其爲式(1)201206943 VI. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to polycyclic compounds. [Prior Art] The organic electro-crystal system is used as a component of an electronic newspaper, a large-screen flat panel display, or the like. Such an organic electromorphic system is composed of a member such as an organic semiconductor active layer, a substrate, an insulating layer, and an electrode. A compound which is known to impart an active layer to an organic semiconductor, such as the one described in 'J. Appl. Phys. 2002, 92, 5259', is a vacuum-evaporated film obtained for use in an organic semiconductor active layer. SUMMARY OF THE INVENTION The present invention provides, a polycyclic compound, which is of the formula (1)

4,5-b’]二雜環,4,5-b']diheterocyclic ring,

-5- 201206943 (式中,P及Q獨立爲硫原子、氧原子、硒原子或碲原子 ,構成上述環之苯環可具有取代基)’ W、X、Y及Z獨立爲硫原子、氧原子、硒原子、碲原子、 S〇2、(rU^C-CR12)、(R13)-Si-(R14)或 N-(R15)’ 且 W、X、 Y及Z所成群中所選出之至少1個爲N-(R15),環構造A及環 構造B獨立爲可具有取代基之芳香族性碳環或可具有取代 基之芳香族性雜環,又,環構造C爲式(C1)所表示之苯 環,且X及Y爲N-(R15)時,環構造A及環構造B獨立爲可具 有取代基之芳香族性雜環, R11、R12、R13及R14獨立爲可具有1個以上鹵原子之烷基或 氫原子,R15獨立爲可具有1個以上鹵原子之烷基) 所表示之多環式化合物; [2] 如[1]所記載之多環式化合物,其中W、X、γ及z 獨立爲硫原子、氧原子、硒原子或N-(R15),且W、X、γ 及Z所成群中所選出之至少1個爲N-(R15); [3] 如[1]或[2]所記載之多環式化合物,其中W、X、 γ及Z所成群中所選出之至少2個爲N-(R15); [4] 如[1]至[3]中任何一項所記載之多環式化合物, 其中環構造C爲式(C2)所表示之雜[3,2-b]雜環或式(C3 )所表示之苯歼[l,2-b: 4,5-b’]二雜環; [5] 如[1]所記載之多環式化合物,其中環構造C爲( C1)所表示之苯環’ X及γ獨立爲n-(R15),W及Z獨立爲硫 原子、氧原子或硒原子,環構造A及環構造B獨立爲可具 有取代基之芳香族性雜環; 201206943 [6] 如[1]所記載之多環式化合物,其中環構造C爲式 (C1)所表示之苯環,且X及Y獨立爲硫原子、氧原子或 硒原子,W及Z獨立爲N-(R15); [7] 如[1]至[6]中任何一項所記載之多環式化合物, 其中可具有取代基之芳香族性碳環爲,可具有取代基之苯 環或可具有取代基之萘環,可具有取代基之芳香族性雜環 爲,可具有取代基之噻吩環,可具有取代基之苯并[b]噻 吩環或可具有取代基之噻吩并[3,2-b]噻吩環; [8] 如[4]或[7]所記載之多環式化合物,其環構造C爲 ,噻吩并[b]噻吩環,可具有取代基之苯并[l,2-b: 4,5-b’] 二噻吩環或可具有取代基之苯并[l,2-b: 4,5-b’]二呋喃環 » [9] 如[4]、[7]或[8]所記載之多環式化合物,其中環 構造C爲,噻吩并[3,2-b]噻吩環或無取代之苯并[i,2-b: 4,5-b’]二噻吩環; [10] 如[4]、[7]、[8]或[9]所記載之多環式化合物, 其中W及X中一方爲N-(R15),另一方爲硫原子 '氧原子或 硒原子,Y及Z中一方爲N-(R15),另一方爲硫原子、氧原 子或硒原子; [11] 如[10]所記載之多環式化合物,其中X爲N-(R15) ,W爲硫原子,Y爲N-(R15),z爲硫原子; [12] 如[10]所記載之多環式化合物,其中w爲N-(R15),X爲硫原子,Z爲N-(R15),Y爲硫原子; [13] 如[5]所記載之多環式化合物,其中環構造A及 201206943 環構造B獨立爲,可具有取代基之噻吩環; [14] 如[5]或[13]所記載之多環式化合物,其中X及γ 爲相同之N-(R15),W及Z爲硫原子; [15] 如[6]所記載之多環式化合物,其中環構造a及 環構造B獨立爲,可具有取代基之苯環、可具有取代基之 萘環或可具有取代基之噻吩環; [16] 如[6]或[15]所記載之多環式化合物,其中…及乙 爲相同之N-(R15),X及Y雙方爲硫原子或氧原子; [17] —種薄膜,其爲含有如[1]至[16]中任何一項所 記載之多環式化合物; [18] —種薄膜,其爲僅由如[1]至[16]中任何一項所 記載之多環式化合物形成; [19] 一種有機電晶體,其爲含有如[17]所記載之薄 膜; [20] 一種有機電晶體,其爲含有如[18]所記載之薄 膜; [21] —種有機半導體裝置,其爲含有如[19]或[20]所 記載之有機電晶體;等。 實施發明之最佳形態 首先將說明本發明之式(1)所表示之多環式化合物 (以下略記爲化合物(1 ))。 化合物(1)爲,由各自含有W、X、γ及Z之4個5員 環與環構造A、環構造B及環構造C形成之化合物。化合物 201206943 (1)中W、X、Y及Z獨立爲硫原子、氧原子、硒原子、 碲原子、S02、(RH)-C-(R12)、(R13)-Si-(R14)或 N-(R15), 且W、X、Y及Z所成群中所選出之至少一個爲N-(R15)。 R15爲可具有1個以上鹵原子之烷基,具體例如,甲基、乙 基、η-丙基、異丙基、η-丁基、s-丁基' t-丁基、η-戊基 、新戊基、η-己基、2-乙基己基、環己基、n-庚基、n-辛 基、環辛基、η -壬基、η -癸基、2 -己基癸基' η-~|—^院基 、η-十二烷基、η-十三烷基、η-十四烷基、η-十五烷基、 η-十六烷基、η-十七烷基、η-十八烷基、η-十九烷基、η-二十烷基、η-二十一烷基、η-二十二烷基、η-二十三烷基 、η-二十四烷基、η-二十五烷基、η-二十六烷基、η-二十 七烷基、n-二十八烷基、η-二十九烷基' η-三十烷基等之 碳數1至30之直鏈狀、支鏈狀或環狀之烷基及上述烷基之 部分或全部氫原子被鹵原子取代之基,較佳爲可具有1個 以上鹵原子之碳數1至20之烷基。 W、X、Υ及Ζ獨立爲硫原子、氧原子、硒原子或Ν-(R15),且W、、Υ及Ζ所成群中所選出之至少1個較佳爲 N-(R15),W、X、Υ及Ζ更佳爲,獨立之硫原子、氧原子、 硒原子或N-(R15),且W、X、Y及Z所成群中所選出之至少 2個爲 N-(R15)。 W、X、Y及Z特佳爲,獨立之硫原子或N-(R15),且W 、X、Y及Z所成群中所選出之至少2個爲N-(R15)。 R11、R12、R13及R14獨立爲,可具有1個以上鹵原子之 烷基或氫原子,可具有1個以上鹵原子之烷基如,與上述 -9- 201206943 R15相同之基。 就易合成化合物(1)之觀點較佳爲’ x與γ相同’ w 與z相同。 式(1)中,環構造A及環構造B獨立爲,可具有取代 基之芳香族性碳環(以下略記爲芳香環)或可具有取代基 之芳香族性雜環(以下略記爲雜環)° 環構造A及環構造B之芳香環爲具有芳香族性之環’ 環構造A之芳香環爲,由6至14個碳原子構成’共有含有W 之5員環與2個碳原子之碳環。環構造B之芳香環爲’由6至 14個碳原子構成,共有含有Z之5員環與2個碳原子之碳環 。該芳香環可具有1個以上取代基。 無取代之芳香環如,苯環、萘環、蒽環、菲環及芴環 ,較佳爲苯環及萘環,更佳爲苯環。 環構造A及環構造B之雜環爲,具有芳香族性且含有 至少1個異種原子之環,環構造A之雜環爲,構成環之原 子數爲5至I2,共有含有W之5員環與2個碳原子之碳環。 環構造B之雜環爲,構成環之原子數爲5至12,共有含z之 5員環與2個碳原子之碳環。該雜環可具有1個以上取代基 。異種原子如,氧原子、硒原子、硫原子及氮原子。雜環 所含之異種原子數較佳爲1個或2個。 無取代之雜環如,噻吩環、呋喃環、硒吩環、吡略環 、噁唑環、噻唑環、吡啶環、吡嗪環、嘧啶環、噠嗪環等 之單環式雜環’及噻吩并[3,2-b]噻吩環、呋喃并[3,2-b]咲 喃環、噻吩并[3,2-b]呋喃環、苯并[b]噻吩環、苯幷[b]咲 -10- 201206943 喃環等之雙環式雜環。 環構造A及環構造B之雜環較佳爲,噻吩環、呋喃環 、硒吩環、吡咯環、噻唑環、噻吩并[3,2-b]噻吩環、呋喃 并[3,2-b]呋喃環、噻吩并[3,2-b]呋喃環、苯并[b]噻吩環 及苯并[b]呋喃環,更佳爲共有2位及3位之碳原子與含有W 或Z之環之噻吩環、共有2位及3位之碳原子與含有W或Z之 環之噻吩并[3,2-b]噻吩環,及共有2位及3位之碳原子與含 有W或Z之環之苯并[b]噻吩環,特佳爲共有2位及3位之碳 原子與含有W或Z之環之噻吩環。 環構造A及環構造B之芳香環及雜環之取代基如,烷 基、烷氧基、芳基、烷基取代芳基、烷氧基取代芳基、雜 芳基、烷基取代雜芳基、烷氧基取代雜芳基、鏈烯基、炔 基、烷硫基、烷羰基、烷氧基羰基、(三烷基)矽烷基、 (二烷基)胺基、鹵原子、氰基及硝基。前述烷基、烷氧 基、芳基、烷基取代芳基、烷氧基取代芳基、雜芳基、烷 基取代雜芳基、烷氧基取代雜芳基、鏈烯基、炔基、烷硫 基、烷羰基、烷氧基羰基、(三烷基)矽烷基及(二烷基 )胺基可具有1個以上鹵原子。 其中較佳爲,可具有1個以上鹵原子之烷基,可具有1 個以上鹵原子之烷氧基,可具有1個以上鹵原子之芳基, 可具有1個以上鹵原子之烷基取代芳基,可具有1個以上鹵 原子之烷氧基取代芳基,可具有1個以上鹵原子之雜芳基 ,可具有1個以上鹵原子之烷基取代雜芳基,可具有1個以 上鹵原子之烷氧基取代雜芳基,可具有1個以上鹵原子之 -11 - 201206943 (三烷基)矽烷基及鹵原子, 更佳爲可具有1個以上鹵原子之烷基,可具有1個以 子之烷氧基,可具有1個以上鹵原子之芳基,可具] 上鹵原子之雜芳基,可具有1個以上鹵原子之(三 矽烷基及鹵原子, 特佳爲可具有1個以上鹵原子之烷氧基,可具有1個 原子之芳基,可具有1個以上鹵原子之雜芳基及鹵頂 上述鹵原子如,氟原子、氯原子、溴原子及碘 較佳爲氟原子、溴原子及碗原子。 上述烷基如,直鏈狀烷基、支鏈狀烷基及環狀 較佳爲碳數1至30之直鏈狀、支鏈狀或環狀烷基。. 如,甲基、乙基、η-丙基、異丙基、η-丁基、S-丁 丁基、η-戊基、新戊基、η-己基' 2-乙基己基、環 η-庚基、η-辛基、環辛基·、η-壬基、η-癸基、2-己 、η-十一烷基、η-十二烷基、η-十三烷基、η-十四 η-十五烷基、η-十六烷基、η-十七烷基、η-十八烷 十九烷基、η-二十烷基、η-二十一烷基、η-二十二 η-二十三烷基、η-二十四烷基、η-二十五烷基、η-烷基、η-二十七烷基、η-二十八烷基、η-二十九烷 三十烷基,較佳爲碳數1至2〇之烷基’更佳爲碳數1 烷基。具有1個以上鹵原子之烷基如,上述烷基之 全部氫原子被鹵原子取代之基。 上述烷氧基如,直鏈狀、支鏈狀及環狀烷氧基 爲碳數1至30之直鏈狀、支鏈狀或環狀之烷氧基。 上鹵原 I 1個以 垸基) 以上鹵 €子。 原子, 烷基, 具體例 基、t-己基、 基癸基 烷基、 基、n-烷基、 二十六 基及n-至16之 部分或 ,較佳 具體例 -12- 201206943 如,甲氧基、乙氧基、η-丙氧基、異丙氧基、η-丁氧基、 異丁氧基' t-丁氧基、η-戊氧基、新戊氧基、η-己氧基、 2-乙基己氧基、環己氧基、η-庚氧基、η-辛氧基、環辛氧 基、壬氧基、癸氧基、2 -己基癸基、3,7 -一甲基辛氧基、 η-十一烷氧基、η-十二烷氧基、η-十三烷氧基、η-十四烷 氧基、η-十五烷氧基、η-十六烷氧基、η-十七烷氧基、η-十八烷氧基、η-十九烷氧基、η-二十烷氧基、η-二十一烷 氧基、η-二十二烷氧基、II-二十三烷氧基、η-二十四烷氧 基、η -二十五院氧基、η -二十六院氧基、η -二十七院氧基 、η -二十八院氧基、η -二十九院氧基、η -二十垸氧基、甲 氧基甲氧基、甲氧基乙氧基、甲氧基甲氧基甲氧基、甲氧 基乙氧基乙氧基及聚乙二醇氧基,較佳爲碳數1至20之烷 氧基,更佳爲碳數1至16之烷氧基。具有1個以上鹵原子之 烷氧基如,上述烷氧基之部分或全部氫原子被鹵原子取代 之基。 上述芳基如,苯基、萘基等之碳數6至20之芳基,較 佳爲苯基及萘基。具有1個以上鹵原子之芳基如,上述芳 基之部分或全部氫原子被鹵原子取代之基。 上述雜芳基較佳爲,單環或雙環之雜芳基,例如噻嗯 基、呋喃基、噻唑基、噻吩并[3,2-b]噻嗯基、呋喃并[3,2-b]呋喃基、噻吩并[3,2-b]呋喃基、苯并[b]噻嗯基、苯并 [b]呋喃基,更佳爲噻嗯基、呋喃基、噻吩并[3,2-b]噻嗯 基、苯并[b]噻嗯基及苯并[b]呋喃基。具有1個以上鹵原子 之雜芳基如,上述雜芳基之部分或全部氫原子被鹵原子取 -13- 201206943 代之基。 上述烷基取代芳基爲,上述芳基之1個以上氫原子被 上述烷基取代之基。 上述烷氧基取代芳基爲,上述芳基之1個以上氫原子 被上述烷氧基取代之基。 上述烷基取代雜芳基爲,上述雜芳基之1個以上氫原 子被上述烷基取代之基。 上述烷氧基取代雜芳基爲,上述雜芳基之1個以上氫 原子被上述烷氧基取代之基。 上述鏈烯基如,直鏈狀鏈烯基及支鏈狀鏈烯基,較佳 爲碳數2至30之直鏈狀或支鏈狀鏈烯基。具體例如,乙烯 基、1-丙烯基、1-丁烯基、1-戊烯基、1-己烯基、1-環己 烯基、1-庚烯基、1-辛烯基、1-壬烯基、1-癸烯基、1-十 一碳烯基、1-十二碳烯基、1-十三碳烯基、1-十四碳烯基 、1-十五碳烯基、1-十六碳烯基、1-十七碳烯基、1-十八 碳烯基、1-十九碳烯基、1-二十碳烯基、1-二十一碳烯基 、1-二十二碳烯基、1-二十三碳烯基、1-二十四碳烯基、 1-二十五碳烯基、1-二十六碳烯基、1-二十七碳烯基、1-二十八碳烯基、1-二十九碳烯基及1-三十碳烯基,較佳爲 碳數2至20之鏈烯基,更佳爲碳數2至16之鏈烯基。具有1 個以上鹵原子之鏈烯基如,上述鏈烯基之部分或全部氫原 子被鹵原子取代之基。 上述炔基如,直鏈狀炔基及支鏈狀炔基,較佳爲碳數 2至30之直鏈狀或支鏈狀炔基。具體例如,乙块基、1-丙 -14- 201206943 炔基、1 - 丁炔基、1 -戊快基、1 -己炔基、1 -庚炔基、1 -辛 炔基、1 -壬炔基、1 -癸炔基、1 - Ί--碳炔基、1 -十二碳炔 基、1-十三碳炔基、1-十四碳炔基、十五碳炔基、1_十 六碳炔基、1-十七碳炔基、1-十八碳炔基、十九碳炔基 、1-二十碳快基、1-二-[—碳炔基、1-—十一碳炔基、1-二十三碳炔基、1-二十四碳炔基、1-二十五碳炔基、^二 十六碳炔基、1-二十七碳炔基、1-二十八碳炔基、卜二十 九碳炔基及1-三十碳炔基,較佳爲碳數2至20之炔基’更 佳爲碳數2至16之炔基。具有1個以上鹵原子之炔基如’上 述炔基之部分或全部氫原子被鹵原子取代之基。 上述烷硫基如,直鏈狀、支鏈狀及環狀之烷硫基’較 佳爲碳數1至30之直鏈狀、支鏈狀或環狀之烷硫基。具體 例如,甲硫基、乙硫基、η -丙硫基、異丙硫基、η -丁硫基 、異丁硫基、s-丁硫基、t-丁硫基、η-戊硫基、環戊硫基 、η-己硫基、2-乙基己硫基、環己硫基、η-庚硫基、環庚 硫基、η-辛硫基、環辛硫基、η-壬硫基、η-癸硫基、2-己 基癸硫基、η-~(--院硫基、η -十二院硫基、η -十三院硫基 、η-十四烷硫基、η-十五烷硫基、η-十六烷硫基、η-十七 院硫基、η_十八院硫基、η·十九院硫基、η -—十院硫基、 η-二十一烷硫基、η-二十二烷硫基、η-二十三烷硫基、η-二十四烷硫基、η-二十五烷硫基' η-二十六烷硫基、η-二 十七烷硫基、η-二十八烷硫基、η-二十九烷硫基及η-三十 烷硫基,碳數2至20之烷硫基,更佳爲碳數2至16之烷硫基 。具有1個以上鹵原子之烷硫基如,上述烷硫基之部分或 15- 201206943 全部氫原子被鹵原子取代之基。 上述烷羰基如,直鏈狀之烷羰基及支鏈狀之烷羰基, 較佳爲碳數2至30之直鏈狀或支鏈狀之烷羰基,更佳爲碳 數2至17之直鏈狀或支鏈狀之烷羰基。具體例如,甲羰基 、乙羰基、η-丁羰基、η-己羰基、η-辛羰基、η-十一羰基 、η-十五羰基及η-二十羰基。具有1個以上鹵原子之烷羰 基如,上述烷羰基之部分或全部氫原子被鹵原子取代之基 上述烷氧基羰基如,直鏈狀烷氧基羰基及支鏈狀烷氧 基羰基,較佳爲碳數2至30之直鏈狀或支鏈狀烷氧基羰基 ,更佳爲碳數2至17之直鏈狀或支鏈狀烷氧基羰基。具體 例如,甲氧基羰基、乙氧基羰基、η-丁氧基羰基、η-己氧 基羰基、η_辛氧基羰基、η-十二烷氧基羰基、η-十五烷氧 基羰基及η-二十烷氧基羰基。具有1個以上鹵原子之烷氧 基羰基如,上述烷氧基羰基之部分或全部氫原子被鹵原子 取代之基。 上述(三烷基)矽烷基如,3個碳數1至30之烷基鍵結 於矽原子之基。具體例如,三甲基矽烷基、三乙基矽烷基 、三-η-丙基矽烷基、三異丙基矽烷基、三-η-丁基矽烷基 、三-s-丁基矽烷基、三-t-丁基矽烷基、三-異丁基矽烷基 、t-丁基-二甲基矽烷基、三-n-戊基矽烷基、三-η-己基矽 烷基及二甲基-η-十二烷基矽烷基,較佳爲3個碳數1至6之 烷基鍵結於矽原子之基。具有1個以上鹵原子之(三烷基 )矽烷基如,3個烷基鍵結於矽原子之基中,至少1個烷基 -16- 201206943 之部分或全部氫原子被鹵原子取代之基。 上述(二烷基)胺基如,2個碳數1至30之烷基鍵結於 氮原子之基,即,胺基之2個氫原子各自被碳數1至30之烷 基取代之基。較佳爲2個碳數1至10之烷基鍵結於氮原子之 基。具體例如,二甲基胺基、二乙基胺基、二-η-丙基胺 基、二異丙基胺基、二-η-丁基胺基、二-s-丁基胺基、二 t-丁基胺基、二-異丁基胺基、t-丁基異丙基胺基、二-η-己基胺基、二-η-辛基胺基及二-η_癸基胺基。具有1個以上 鹵原子之(二烷基)胺基如,2個烷基鍵結於氮原子之基 中’至少1個烷基之部分或全部氫原子被鹵原子取代之基 〇 環構造C爲,式(C1)所表示之苯環、式(C2)所表 示之雜[3,2-b]雜環或式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環。-5- 201206943 (In the formula, P and Q are independently a sulfur atom, an oxygen atom, a selenium atom or a ruthenium atom, and the benzene ring constituting the above ring may have a substituent) 'W, X, Y and Z are independently a sulfur atom and oxygen. Atom, selenium atom, germanium atom, S〇2, (rU^C-CR12), (R13)-Si-(R14) or N-(R15)' and selected from the group of W, X, Y and Z At least one of them is N-(R15), and the ring structure A and the ring structure B are independently an aromatic carbocyclic ring which may have a substituent or an aromatic heterocyclic ring which may have a substituent, and the ring structure C is a formula ( When the benzene ring represented by C1) and X and Y are N-(R15), the ring structure A and the ring structure B are independently an aromatic hetero ring which may have a substituent, and R11, R12, R13 and R14 are independently independent. a polycyclic compound represented by an alkyl group having 1 or more halogen atoms or a hydrogen atom, and R 15 is independently an alkyl group which may have one or more halogen atoms; [2] a polycyclic compound as described in [1], Wherein W, X, γ and z are independently a sulfur atom, an oxygen atom, a selenium atom or N-(R15), and at least one selected from the group consisting of W, X, γ and Z is N-(R15); [3] a polycyclic compound as described in [1] or [2], At least two selected from the group consisting of W, X, γ, and Z are N-(R15); [4] The polycyclic compound of any one of [1] to [3], wherein the ring The structure C is a hetero [3,2-b] heterocyclic ring represented by the formula (C2) or a benzoquinone [l,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3); The polycyclic compound according to [1], wherein the ring structure C is a benzene ring represented by (C1), and X and γ are independently n-(R15), and W and Z are independently a sulfur atom, an oxygen atom or selenium. The atomic ring structure A and the ring structure B are independently an aromatic heterocyclic ring which may have a substituent; 201206943 [6] The polycyclic compound according to [1], wherein the ring structure C is represented by the formula (C1) a benzene ring, and X and Y are independently a sulfur atom, an oxygen atom or a selenium atom, and W and Z are independently N-(R15); [7] A polycyclic ring as described in any one of [1] to [6] The compound, wherein the aromatic carbocyclic ring which may have a substituent is a benzene ring which may have a substituent or a naphthalene ring which may have a substituent, an aromatic heterocyclic ring which may have a substituent, and a thiophene ring which may have a substituent a benzo[b]thiophene ring which may have a substituent or a thieno[3] which may have a substituent , the 2-b] thiophene ring; [8] The polycyclic compound as described in [4] or [7], wherein the ring structure C is a thieno[b]thiophene ring, a benzo[1] group having a substituent , 2-b: 4,5-b'] dithiophene ring or benzo[l,2-b: 4,5-b']difuran ring which may have a substituent» [9] as [4], [ The polycyclic compound described in 7 or [8], wherein the ring structure C is a thieno[3,2-b]thiophene ring or an unsubstituted benzo[i,2-b: 4,5-b' a polycyclic compound as described in [4], [7], [8] or [9], wherein one of W and X is N-(R15), and the other is a sulfur atom. 'Oxygen atom or selenium atom, one of Y and Z is N-(R15), and the other is a sulfur atom, an oxygen atom or a selenium atom; [11] The polycyclic compound as described in [10], wherein X is N -(R15), W is a sulfur atom, Y is N-(R15), and z is a sulfur atom; [12] The polycyclic compound as described in [10], wherein w is N-(R15), and X is sulfur The atom, Z is N-(R15), and Y is a sulfur atom; [13] The polycyclic compound according to [5], wherein the ring structure A and the 201206943 ring structure B are independently a thiophene ring which may have a substituent; [14] as recorded in [5] or [13] a polycyclic compound wherein X and γ are the same N-(R15), and W and Z are a sulfur atom; [15] The polycyclic compound according to [6], wherein ring structure a and ring structure B are independently a benzene ring which may have a substituent, a naphthalene ring which may have a substituent or a thiophene ring which may have a substituent; [16] The polycyclic compound of [6] or [15], wherein ... and B are the same N-(R15), both X and Y are a sulfur atom or an oxygen atom; [17] a film which is a polycyclic compound as described in any one of [1] to [16]; [18] A film formed by the polycyclic compound as described in any one of [1] to [16]; [19] an organic transistor comprising the film according to [17]; [20] An organic transistor comprising the film according to [18]; [21] an organic semiconductor device comprising the organic transistor according to [19] or [20]; BEST MODE FOR CARRYING OUT THE INVENTION First, the polycyclic compound represented by the formula (1) of the present invention (hereinafter abbreviated as the compound (1)) will be described. The compound (1) is a compound formed of four 5-membered rings each containing W, X, γ, and Z, and a ring structure A, a ring structure B, and a ring structure C. Compound 201206943 (1) wherein W, X, Y and Z are independently a sulfur atom, an oxygen atom, a selenium atom, a germanium atom, S02, (RH)-C-(R12), (R13)-Si-(R14) or N. - (R15), and at least one selected from the group consisting of W, X, Y, and Z is N-(R15). R15 is an alkyl group which may have one or more halogen atoms, and specifically, for example, methyl, ethyl, η-propyl, isopropyl, η-butyl, s-butyl't-butyl, η-pentyl , neopentyl, η-hexyl, 2-ethylhexyl, cyclohexyl, n-heptyl, n-octyl, cyclooctyl, η-fluorenyl, η-fluorenyl, 2-hexylfluorenyl' η- ~|-^, η-dodecyl, η-tridecyl, η-tetradecyl, η-pentadecyl, η-hexadecyl, η-heptadecyl, η -octadecyl, η-nonadecyl, η-icosyl, η-icosyl, η-docosyl, η-tetracosyl, η-tetracosane Base, η-pentacosyl, η-hexadecyl, η-tetradecyl, n-dodecyl, η-tetradecyl ' η-tridecyl, etc. a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms and a group in which a part or all of hydrogen atoms of the above alkyl group are substituted by a halogen atom, preferably having a carbon number of 1 or more halogen atoms To 20 alkyl groups. W, X, Υ and Ζ are independently a sulfur atom, an oxygen atom, a selenium atom or Ν-(R15), and at least one selected from the group consisting of W, Υ and Ζ is preferably N-(R15), More preferably, W, X, Υ and Ζ are independent sulfur atoms, oxygen atoms, selenium atoms or N-(R15), and at least two selected from the group consisting of W, X, Y and Z are N-( R15). W, X, Y and Z are particularly preferred, independent sulfur atoms or N-(R15), and at least two selected from the group consisting of W, X, Y and Z are N-(R15). R11, R12, R13 and R14 are each independently an alkyl group or a hydrogen atom which may have one or more halogen atoms, and an alkyl group which may have one or more halogen atoms, such as the same group as the above-mentioned -9-201206943 R15. The viewpoint of the easy synthesis of the compound (1) is preferably that 'x is the same as γ' w is the same as z. In the formula (1), the ring structure A and the ring structure B are independently an aromatic carbocyclic ring which may have a substituent (hereinafter abbreviated as an aromatic ring) or an aromatic heterocyclic ring which may have a substituent (hereinafter abbreviated as a heterocyclic ring) ° ° Ring structure A and ring structure B of the aromatic ring is an aromatic ring ' ring structure A's aromatic ring is composed of 6 to 14 carbon atoms 'shared with 5 ring of 5 and 2 carbon atoms Carbon ring. The aromatic ring of ring structure B is composed of 6 to 14 carbon atoms and has a carbon ring containing a 5-membered ring and a carbon atom of Z. The aromatic ring may have one or more substituents. The unsubstituted aromatic ring is, for example, a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring or an anthracene ring, preferably a benzene ring and a naphthalene ring, more preferably a benzene ring. The heterocyclic ring of the ring structure A and the ring structure B is a ring having aromaticity and containing at least one hetero atom, and the hetero ring of the ring structure A is a ring having 5 to 12 atoms, and a total of 5 members containing W Ring with a carbon ring of 2 carbon atoms. The heterocyclic ring of the ring structure B is such that the number of atoms constituting the ring is 5 to 12, and a carbon ring containing a 5-membered ring and 2 carbon atoms is common. The heterocyclic ring may have one or more substituents. Heterogeneous atoms such as oxygen atoms, selenium atoms, sulfur atoms, and nitrogen atoms. The number of heterologous atoms contained in the heterocyclic ring is preferably one or two. Unsubstituted heterocyclic ring such as thiophene ring, furan ring, selenophene ring, pyroline ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, etc. Thieno[3,2-b]thiophene ring, furo[3,2-b]pyranyl ring, thieno[3,2-b]furan ring, benzo[b]thiophene ring, benzoquinone[b]咲-10- 201206943 A bicyclic heterocyclic ring such as a ring. The heterocyclic ring of ring structure A and ring structure B is preferably a thiophene ring, a furan ring, a selenophene ring, a pyrrole ring, a thiazole ring, a thieno[3,2-b]thiophene ring, a furo[3,2-b a furan ring, a thieno[3,2-b]furan ring, a benzo[b]thiophene ring and a benzo[b]furan ring, more preferably a carbon atom having 2 and 3 positions and a W or Z group a thiophene ring of a ring, a carbon atom having 2 and 3 positions and a thieno[3,2-b]thiophene ring containing a ring of W or Z, and a carbon atom having 2 and 3 positions and containing W or Z The benzo[b]thiophene ring of the ring is particularly preferably a thiophene ring having a carbon atom of 2 and 3 positions and a ring containing W or Z. The ring of the ring structure A and the ring structure B and the substituent of the hetero ring such as an alkyl group, an alkoxy group, an aryl group, an alkyl-substituted aryl group, an alkoxy-substituted aryl group, a heteroaryl group, an alkyl-substituted heteroaryl group Alkoxy substituted heteroaryl, alkenyl, alkynyl, alkylthio, alkylcarbonyl, alkoxycarbonyl, (trialkyl)decyl, (dialkyl)amine, halogen, cyano And nitro. Alkyl, alkoxy, aryl, alkyl substituted aryl, alkoxy substituted aryl, heteroaryl, alkyl substituted heteroaryl, alkoxy substituted heteroaryl, alkenyl, alkynyl, The alkylthio group, the alkylcarbonyl group, the alkoxycarbonyl group, the (trialkyl)decylalkyl group and the (dialkyl)amine group may have one or more halogen atoms. Among them, an alkyl group having one or more halogen atoms, an alkoxy group having one or more halogen atoms, an aryl group having one or more halogen atoms, and an alkyl group having one or more halogen atoms may be preferably used. The aryl group may have an alkoxy-substituted aryl group having one or more halogen atoms, may have a heteroaryl group of one or more halogen atoms, may have an alkyl-substituted heteroaryl group having one or more halogen atoms, and may have one or more The alkoxy-substituted heteroaryl group of the halogen atom may have -11 - 201206943 (trialkyl) fluorenyl group and a halogen atom of one or more halogen atoms, more preferably an alkyl group which may have one or more halogen atoms, and may have One of the alkoxy groups may have an aryl group having one or more halogen atoms, may have a heteroaryl group of a halogen atom, and may have one or more halogen atoms (trialkylene group and halogen atom, particularly preferably An alkoxy group having one or more halogen atoms, an aryl group having one atom, a heteroaryl group having one or more halogen atoms, and a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom and iodine Preferred are a fluorine atom, a bromine atom and a bowl atom. The above alkyl group is, for example, a linear alkyl group or a branched chain. The alkyl group and the cyclic group are preferably a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms. For example, methyl, ethyl, η-propyl, isopropyl, η-butyl , S-butylbutyl, η-pentyl, neopentyl, η-hexyl '2-ethylhexyl, cycloη-heptyl, η-octyl, cyclooctyl, η-fluorenyl, η-fluorenyl , 2-hexyl, η-undecyl, η-dodecyl, η-tridecyl, η-tetradecyl-pentadecyl, η-hexadecyl, η-heptadecyl , η-octadecanecandecyl, η-eicosyl, η-tetradecyl, η-twencosyl-tetracosyl, η-tetracosyl, η-di Pentadecyl, η-alkyl, η-tetradecyl, η-octadecyl, η-dodecyltridecyl, preferably an alkyl group having 1 to 2 carbon atoms. More preferably, it is a C 1 alkyl group, and an alkyl group having one or more halogen atoms, such as a group in which all hydrogen atoms of the above alkyl group are substituted by a halogen atom. The alkoxy group is, for example, linear, branched or cyclic. The alkoxy group is a linear, branched or cyclic alkoxy group having 1 to 30 carbon atoms. The upper halogen atom I is a fluorenyl group. Atom, an alkyl group, a specific example group, a t-hexyl group, a decylalkyl group, a group, an n-alkyl group, a hexadecyl group, and a part of n- to 16 or, preferably, a specific example -12-201206943 Oxyl, ethoxy, η-propoxy, isopropoxy, η-butoxy, isobutoxy ' t-butoxy, η-pentyloxy, neopentyloxy, η-hexyloxy , 2-ethylhexyloxy, cyclohexyloxy, η-heptyloxy, η-octyloxy, cyclooctyloxy, decyloxy, decyloxy, 2-hexyldecyl, 3,7- Monomethyloctyloxy, η-undecyloxy, η-dodecyloxy, η-tridecyloxy, η-tetradecyloxy, η-pentadecanyloxy, η-ten Hexacarbonyloxy, η-heptadecanyloxy, η-octadecyloxy, η-nonadecanyloxy, η-icosyloxy, η-icosyloxy, η-Twenty a dialkoxy group, a II-docosyloxy group, a η-tetracosyloxy group, a η-tetradecyloxy group, an η-trihexayloxy group, an η-27-isthoxy group, η - 28 oxalate oxy, η - yttrium oxide, η - decyloxy, methoxymethoxy, methoxyethoxy, methoxymethoxymethoxy, Methoxy The ethoxyethoxy group and the polyethylene glycoloxy group are preferably an alkoxy group having 1 to 20 carbon atoms, more preferably an alkoxy group having 1 to 16 carbon atoms. An alkoxy group having one or more halogen atoms, such as a group in which a part or all of hydrogen atoms of the above alkoxy group are substituted by a halogen atom. The above aryl group is an aryl group having 6 to 20 carbon atoms such as a phenyl group or a naphthyl group, and more preferably a phenyl group or a naphthyl group. An aryl group having one or more halogen atoms such as a group in which a part or all of hydrogen atoms of the above aryl group are substituted by a halogen atom. The above heteroaryl group is preferably a monocyclic or bicyclic heteroaryl group such as a thiol group, a furyl group, a thiazolyl group, a thieno[3,2-b]thiol group, a furo[3,2-b] group. Furanyl, thieno[3,2-b]furanyl, benzo[b]thienyl, benzo[b]furanyl, more preferably thienyl, furyl, thieno[3,2-b Thiamine, benzo[b]thienyl and benzo[b]furanyl. A heteroaryl group having one or more halogen atoms, for example, a part or all of hydrogen atoms of the above heteroaryl group is substituted by a halogen atom from the group -13 to 201206943. The alkyl-substituted aryl group is a group in which one or more hydrogen atoms of the above aryl group are substituted with the above alkyl group. The alkoxy-substituted aryl group is a group in which one or more hydrogen atoms of the above aryl group are substituted by the above alkoxy group. The alkyl-substituted heteroaryl group is a group in which one or more hydrogen atoms of the above heteroaryl group are substituted with the above alkyl group. The alkoxy-substituted heteroaryl group is a group in which one or more hydrogen atoms of the above heteroaryl group are substituted by the above alkoxy group. The above alkenyl group, for example, a linear alkenyl group and a branched alkenyl group, is preferably a linear or branched alkenyl group having 2 to 30 carbon atoms. Specifically, for example, vinyl, 1-propenyl, 1-butenyl, 1-pentenyl, 1-hexenyl, 1-cyclohexenyl, 1-heptenyl, 1-octenyl, 1- Decenyl, 1-decenyl, 1-undecylalkenyl, 1-dodecenyl, 1-tridecenyl, 1-tetradecenyl, 1-pentadecenyl, 1-hexadecenyl, 1-heptadecenyl, 1-octadecenyl, 1-nonadecenyl, 1-eicosyl, 1-eicosylalkenyl, 1 -tetradecenyl, 1-docosylcenyl, 1-tetracosylenyl, 1-pentadecenyl, 1-hexadecenyl, 1-branched Alkenyl, 1-teroctadecenyl, 1-terecosylenyl and 1-tridecenyl, preferably an alkenyl group having 2 to 20 carbon atoms, more preferably 2 to 16 carbon atoms Alkenyl. The alkenyl group having one or more halogen atoms is a group in which a part or all of hydrogen atoms of the above alkenyl group are substituted by a halogen atom. The above alkynyl group, for example, a linear alkynyl group and a branched alkynyl group, is preferably a linear or branched alkynyl group having 2 to 30 carbon atoms. Specifically, for example, an ethyl group, 1-prop-14-201206943 alkynyl, 1-butynyl, 1-pentyl, 1-hexynyl, 1-heptynyl, 1-octynyl, 1-indole Alkynyl, 1-nonynyl, 1-non-carbynyl, 1-dodecynyl, 1-tridecynyl, 1-tetradecynyl, pentadecynyl, 1_ Hexadecaynyl, 1-heptadecaynyl, 1-octadecynyl, nonadecanyl alkynyl, 1-epi-carbyl, 1-di-[-carbynyl, 1--ten Mono-alkynyl, 1-tetracosylalkynyl, 1-tetracosylalkynyl, 1-tetradecalkynyl, ^hexadecaalkynyl, 1-hexadecanylalkynyl, 1 a octacosyl alkynyl group, a bromo-non-octadecynyl group and a 1-triacontanyl group, preferably an alkynyl group having 2 to 20 carbon atoms is more preferably an alkynyl group having 2 to 16 carbon atoms. An alkynyl group having one or more halogen atoms such as a group in which a part or all of hydrogen atoms of the above alkynyl group are substituted by a halogen atom. The above alkylthio group, for example, a linear, branched or cyclic alkylthio group is more preferably a linear, branched or cyclic alkylthio group having 1 to 30 carbon atoms. Specifically, for example, methylthio, ethylthio, η-propylthio, isopropylthio, η-butylthio, isobutylthio, s-butylthio, t-butylthio, η-pentylthio , cyclopentylthio, η-hexylthio, 2-ethylhexylthio, cyclohexylthio, η-heptylthio, cycloheptylthio, η-octylthio, cyclooctylthio, η-壬Sulfur, η-sulfonylthio, 2-hexylsulfonylthio, η-~(--indolylthio, η-tetradecylthio, η-tritylthio, η-tetradecylthio, Η-pentadecanethio, η-hexadecanethio, η-seventeenth thiol, η_eighteen thiol, η·nine thiol, η - tenth thiol, η- T-dodecylthio, η-docosylthio, η-docosylthio, η-tetracosylthio, η-pentacosylthio ' η-hexadecanesulfide a group, an η-tetradecylthio group, a η-docosylthio group, a η-dodecylthio group and an η-triacontanyl group, and an alkylthio group having 2 to 20 carbon atoms, more preferably An alkylthio group having 2 or more carbon atoms. An alkylthio group having 1 or more halogen atoms, such as a moiety of the above alkylthio group or a group in which all of a hydrogen atom of 15-201206943 is substituted by a halogen atom. The above alkylcarbonyl group is, for example, a linear chain The alkylcarbonyl group and the branched alkylcarbonyl group are preferably a linear or branched alkylcarbonyl group having 2 to 30 carbon atoms, more preferably a linear or branched alkylcarbonyl group having 2 to 17 carbon atoms. Specifically, for example, methylcarbonyl, ethylcarbonyl, η-butanecarbonyl, η-hexylcarbonyl, η-octylcarbonyl, η-undecylcarbonyl, η-pentadecylcarbonyl, and η-icosylcarbonyl. Alkane having one or more halogen atoms A carbonyl group such as a group in which a part or all of hydrogen atoms of the above alkylcarbonyl group are substituted by a halogen atom, such as a linear alkoxycarbonyl group and a branched alkoxycarbonyl group, preferably a carbon number of 2 to 30. a linear or branched alkoxycarbonyl group, more preferably a linear or branched alkoxycarbonyl group having 2 to 17 carbon atoms. Specifically, for example, methoxycarbonyl, ethoxycarbonyl, η-butoxy a carbonyl group, a η-hexyloxycarbonyl group, a η-octyloxycarbonyl group, an η-dodecyloxycarbonyl group, an η-pentadecyloxycarbonyl group, and an η-icosyloxycarbonyl group. The alkoxycarbonyl group is a group in which a part or all of hydrogen atoms of the above alkoxycarbonyl group are substituted by a halogen atom. The above (trialkyl) nonyl group is, for example, 3 carbon atoms of 1 to 30. The alkyl group is bonded to a base of a halogen atom, and specifically, for example, a trimethylsulfanyl group, a triethylsulfanyl group, a tri-n-propyldecylalkyl group, a triisopropyldecylalkyl group, a tri-n-butyldecane group, Tris-butyl-decyl, tri-t-butyldecyl, tri-isobutyldecyl, t-butyl-dimethyldecyl, tri-n-pentyldecyl, tri-η- a hexyldecylalkyl group and a dimethyl-n-dodecyldecanealkyl group, preferably three alkyl groups having 1 to 6 carbon atoms bonded to a ruthenium atom. (Trialkyl group) having one or more halogen atoms The above-mentioned (dialkyl)amino group is, for example, 2 alkyl groups bonded to a base of a halogen atom, at least one of which is substituted by a halogen atom for at least one of the alkyl groups 16 to 201206943. The alkyl group having 1 to 30 carbon atoms is bonded to a group of a nitrogen atom, that is, a group in which two hydrogen atoms of the amine group are each substituted by an alkyl group having 1 to 30 carbon atoms. Preferably, two alkyl groups having 1 to 10 carbon atoms are bonded to the nitrogen atom. Specifically, for example, dimethylamino group, diethylamino group, di-η-propylamino group, diisopropylamino group, di-η-butylamino group, di-s-butylamino group, two T-butylamino, di-isobutylamino, t-butylisopropylamino, di-η-hexylamino, di-η-octylamino and di-η-decylamino . A (dialkyl)amino group having one or more halogen atoms, for example, a group in which a two alkyl group is bonded to a nitrogen atom, and a part or all of hydrogen atoms of at least one alkyl group are substituted by a halogen atom. Is a benzene ring represented by the formula (C1), a hetero [3,2-b] heterocyclic ring represented by the formula (C2) or a benzo[l,2-b: 4,5- represented by the formula (C3). B'] diheterocyclic ring.

(式中’ P及Q獨立爲硫原子 '氧原子、硒原子或碲原子 ,構成上述環之苯環可具有取代基)^ 式(C2 )及(C3 )中,p及q較佳爲,獨立之硫原子 '氧原子或硒原子,更佳爲硫原子或氧原子,特佳爲硫原 子。 構成上述式(C1)及(C3)所表示之環之苯環的取 代基如’同上述環構造A及環構造B之取代基,較佳取代 基也同上述環構造A及環構造b之較佳取代基。 -17- 201206943 式(C2 )所表示之環如’噻吩并[3,2_b]噻吩環、呋喃 并[3,2-b]呋喃環、硒基[3,2_b]硒吩環、噻吩并[32b]呋喃 環、噻吩并[3,2-b]硒吩環及硒基[3,2-b]呋喃環,較佳爲嚷 吩并[3,2-b]噻吩環^ 式(C3 )所表示之環如’苯并[i,2_b : 4,5冲,]二噻吩 環、苯并[l,2-b: 4,5-b’]二呋喃環及苯并[ij-b: 4,5_b,] —硒吩環,較佳爲苯并[ij-b: 4,5-b’]二噻吩環及苯并 [l,2-b : 4,5-b’]二呋喃環,更佳爲苯并:4,5-b,】二 唾吩環。 化α物(1)中,環構造C爲式(C1)所表示之苯環 ,且X及Υ獨立爲N-(R15)時,環構造八及環構造Β獨立爲可 具有取代基之芳香族性雜環’此時W及z較佳爲,獨立之 硫原子、氧原子或硒原子,W及Z更佳爲,獨立爲硫原子 或氧原子’ W及Z特佳爲硫原子。又,此時X及γ較佳爲相 同之 N-(R15p 化合物(1)中,環構造C爲式(C1)所表示之苯環 時較佳爲’ X及Y獨立爲硫原子、氧原子或硒原子,W及z 獨立以N-(R15)爲佳’ X及γ爲硫原子或氧原子,评及2獨立 爲N-(R15)爲更佳,X及Y爲硫原子,贾及2獨立爲N_(Rl5)爲 特佳。又,此時之W及Z爲相同之N-(R15)。 化合物(1)中,環構造爲式(C2)所表示之雜[3,2_ b]雜環或式(C3)所表不之苯并[i,2_b : 4,5-b,]二雜環時 較佳爲’ W及X中一方爲N-(R15)’另一方爲硫原子、氧原 子或晒原子’ Y及Z中一方爲N-(R15),另—方爲硫原子、 • 18 - 201206943 氧原子或硒原子,更佳爲,W及χ中一方爲^⑺】5),另一 方爲硫原子或氧原子,γ及Z中一方爲N-(R15),另一方爲 硫原子或氧原子’特佳爲,W及X中一方爲N-(R15),另一 方爲硫原子或氧原子,γ與X相同,Z與W相同。 化合物(1 )如, 環構造C爲式(C1)所表示之苯環,環構造a及環構造b獨 立爲可具有取代基之芳香族性雜環,乂及γ獨立爲N_(R15) ’ w及Z獨jx爲硫原子、氧原子或硒原子之化合物(^); 環構造C爲式(C1 )所表示之苯環,環構造a及環構造b相 同’且爲可具有取代基之芳香族性雜環,X及γ爲相同之 N-(R15)’ W及Z獨立爲硫原子、氧原子或硒原子之化合物 (1 ); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同’且爲可具有取代基之芳香族性雜環,X及γ爲相同之 N-(R15)’w及Z獨立爲硫原子或氧原子之化合物(1); 環構造C爲式(C1)所表示之苯環,環構造a及環構造b相 同’且爲可具有取代基之芳香族性雜環,X及γ爲相同之 N-(R15),W及Z爲硫原子之化合物(i ); 環構造C爲式(C1)所表示之苯環,環構造a及環構造b獨 爲可具有取代基之噻吩環,又及¥獨立爲n_(ri5),rM爲 碳數1至30之院基’ W及Z獨立爲硫原子、氧原子或硒原子 之化合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造a及環構造b相 同’且爲可具有取代基之噻吩環,X及γ爲相同之n_(Ri5) •19- 201206943 ’ R15爲碳數1至30之烷基’ W及Z獨立爲硫原子、氧原子 或硒原子之化合物(1); 環構造C爲式(C1 )所表示之苯環,環構造a及環構造B相 同,且爲可具有取代基之噻吩環,X及γ爲相同之N-(R15) ’ R15爲碳數1至30之烷基,W及z獨立爲硫原子或氧原子 之化合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造a及環構造B相 同,且爲可具有取代基之噻吩環,X及γ爲相同之N-(R15) ’ R15爲碳數1至30之烷基’ W及Z爲硫原子之化合物(1) 環構造C爲式(C1)所表示之苯環,環構造A及環構造B獨 立爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基或雜 芳基之噻吩環,X及Y獨立爲N-(R15),R15爲碳數1至30之 烷基’ W及Z獨立爲硫原子、氧原子或硒原子之化合物(i ): 環構造C爲式(ci)所表示之苯環,環構造A及環構造B相 同’且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之噻吩環,X及Y爲相同之N-(R15),R15爲碳數1 至30之垸基’ W及Z獨立爲硫原子、氧原子或硒原子之化 合物(1 ): 環構造C爲式(C1 )所表示之苯環,環構造A及環構造B相 同’且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之噻吩環,X及γ爲相同之N-(Ri5),Ri5爲碳數1 至30之院基’ W及Z獨立爲硫原子或氧原子之化合物(1) -20- 201206943 環構造C爲式(Cl)所表示之苯環,環構造A及環構造B相 同’且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之噻吩環,X及Y爲相同之N-(Ri”,Ri5爲碳數1 至3 0之烷基’ W及Z爲硫原子之化合物(丨); 環構造C爲式(Cl)所表示之苯環’環構造a及環構造B獨 立爲可具有取代基之苯并[b]噻吩環,X及γ獨立爲N-(R15) ,R15爲碳數1至30之烷基,W及Z獨立爲硫原子、氧原子 或硒原子之化合物(1); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B獨 立爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基或雜 芳基之苯并[b]噻吩環,X及Y獨立爲N-(R15),R15爲碳數1 至30之烷基’ W及Z獨立爲硫原子、氧原子或硒原子之化 合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造a及環構造B相 同’且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之苯并[b]噻吩環,X及γ爲相同之n-(R15),R15 爲碳數1至30之烷基’ W及Z獨立爲硫原子、氧原子或硒原 子之化合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同’且爲可具有齒原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之苯并[b]噻吩環,X及γ爲相同之n-(R15),R15 爲碳數1至30之烷基’ W及Z獨立爲硫原子或氧原子之化合 物(1 ); -21 - 201206943 環構造C爲式(Cl)所表示之苯環,環構造A及環構造B相 同’且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之苯并[b]噻吩環,X及γ爲相同之n-(r15),R15 爲碳數1至30之院基,W及Z爲硫原子之化合物(1); 環構造C爲式(C1)所表示之苯環,環構造a及環構造B獨 立爲可具有取代基之芳香族性碳環,W及Z獨立爲N-(R15) ’X及Y獨立爲硫原子、氧原子或硒原子之化合物(1); 環構造C爲式(C1)所表示之苯環,環構造a及環構造B相 同’且爲可具有取代基之芳香族性碳環,W及Z爲相同之 N-(R15),X及Y獨立爲硫原子、氧原子或硒原子之化合物 (1 ): 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同’且爲可具有取代基之芳香族性碳環,W及Z爲相同之 >^-(1115),乂及丫獨立爲硫原子或氧原子之化合物(1); 環構造C爲式(C1 )所表示之苯環,環構造A及環構造B相 同,且爲可具有取代基之芳香族性碳環,W及Z爲相同之 N-(R15),X及Y爲硫原子之化合物(1); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B獨 立爲可具有取代基之苯環,W及Z獨立爲N-(R15),R15爲碳 數1至30之烷基,X及Y獨立爲硫原子、氧原子或硒原子之 化合物(1 ): 環構造C爲式(C1 )所表示之苯環,環構造A及環構造B相 同,且爲可具有取代基之苯環,W及Z爲相同之N-(R15), R15爲碳數1至30之烷基,X及Y獨立爲硫原子、氧原子或 -22- 201206943 硒原子之化合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同’且爲可具有取代基之苯環,W及Z爲相同之N-(R15), R15爲碳數1至30之烷基,X及γ獨立爲硫原子或氧原子之 化合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同,且爲可具有取代基之苯環,W及Z爲相同之N-(R15), R15爲碳數1至30之烷基,X及γ爲硫原子之化合物; 環構造C爲式(C1)所表示之苯環,環構造a及環構造B獨 立爲可具有鹵原子、燒基、(三烷基)矽烷基、芳基或雜 芳基之苯環,W及Z獨立爲N-(R15),Ris爲碳數1至3〇之烷 基’ X及Y獨立爲硫原子、氧原子或硒原子之化合物(1) » 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同’且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之苯環,W及Z爲相同之N-(R15),R15爲碳數1至 30之烷基,X及Y獨立爲硫原子、氧原子或硒原子之化合 物(1 ); 環構造C爲式(C1)所表示之苯環,環構造a及環構造B相 同,且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之苯環,W及Z爲相同之N-(R15),R15爲碳數1至 30之烷基,X及Y獨立爲硫原子或氧原子之化合物(1); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同,且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 -23- 201206943 或雜方基之苯環’ W及Z爲相同之N-(R15),R15爲碳數1至 3 0之烷基,X及Y爲硫原子之化合物(1); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B獨 立爲可具有取代基之萘環’ W及Z獨立爲n-(R15),R15爲碳 數1至30之烷基’ X及γ獨立爲硫原子、氧原子或硒原子之 化合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同’且爲可具有取代基之萘環,W及Z爲相同之N-(R15), R15爲碳數1至30之烷基,X及Y獨立爲硫原子、氧原子或 硒原子之化合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同,且爲可具有取代基之萘環,W及Z爲相同之N-(R15), R15爲碳數1至30之烷基,X及Y獨立爲硫原子或氧原子之 化合物(1 ); 環構造C爲式(C1 )所表示之苯環,環構造A及環構造B相 同,且爲可具有取代基之萘環,W及Z爲相同之N-(R15), R15爲碳數1至30之烷基,X及Y爲硫原子之化合物(1 ); 環構造C爲式(C1)所表示之苯環’環構造A及環構造B獨 立爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基及雜 芳基之萘環,W及Z獨立爲N-(R15),R15爲碳數1至之院 基,X及Y獨立爲硫原子、氧原子或硒原子之化合物(1) , 環構造c爲式(C1)所表示之苯環’環構造A及環構造B相 同,且爲可具有鹵原子、烷基、(三院基)砂院基、芳基 • 24- 201206943 或雜芳基之萘環’貨及2爲相同之n_(Ri5),Rl5爲碳數1至 3 0之烷基,X及Y獨立爲硫原子、氧原子或硒原子之化合 物(1 ): 環構造C爲式(C1)所表示之苯環,環構造a及環構造8相 同,且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之萘環,W及Z爲相同之N-(R15),R15爲碳數 30之院基,X及Y獨立爲硫原子或氧原子之化合物(丨); 環構造C爲式(C1 )所表示之苯環,環構造a及環構造b相 同,且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜方基之萘環’ W及Z爲相同之N_(R15),R15爲碳數1至 30之院基’ X及Y爲硫原子之化合物(1); 環構造C爲式(C1)所表示之苯環,環構造a及環構造b獨 立爲可具有取代基之噻吩環,W及Z獨立爲N-(R15),R15爲 碳數1至30之烷基,X及Y獨立爲硫原子、氧原子或硒原子 之化合物(1 ): 環構造C爲式(C1)所表示之苯環,環構造a及環構造B相 同’且爲可具有取代基之噻吩環,W及Z爲相同之N-(R15) ,R15爲碳數1至30之烷基,X及Y獨立爲硫原子、氧原子 或硒原子之化合物(1); 環構造C爲式(C1)所表不之苯環,環構造a及環構造B相 同,且爲可具有取代基之噻吩環,W及Z爲相同之N-(R15) ,R15爲碳數1至30之烷基’ X及Y獨立爲硫原子或氧原子 之化合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 -25- 201206943 同,且爲可具有取代基之噻吩環,w及z爲相同之N-(R15) ,R15爲碳數1至30之烷基,X及γ爲硫原子之化合物(1) 環構造c爲式(C1)所表示之苯環,環構造A及環構造B獨 立爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基或雜 芳基之噻吩環,W及Z獨立爲N-(R15),R15爲碳數1至30之 烷基,X及Y獨立爲硫原子、氧原子或硒原子之化合物(1 ): 環構造C爲式(C1)所表示之苯環,環構造a及環構造B相 同’且爲可具有鹵原子'烷基、(三烷基)矽烷基、芳基 或雜芳基之噻吩環’ W及Z爲相同之N-(R15),R15爲碳數1 至30之烷基,X及Y獨立爲硫原子、氧原子或硒原子之化 合物(1 ); 環構造C爲式(C1)所表示之苯環,環構造A及環構造B相 同,且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之噻吩環,W及Z爲相同之N-(R15),R15爲碳數1 至3 0之烷基,X及Y獨立爲硫原子或氧原子之化合物(1) t 環構造c爲式(Cl )所表示之苯環,環構造A及環構造B相 同,且爲可具有鹵原子、烷基、(三烷基)矽烷基、芳基 或雜芳基之噻吩環,W及Z爲相同之N-(R15),R15爲碳數1 至3〇之烷基,X及Y爲硫原子之化合物(1 ); 環構造C爲式(C2 )所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之芳香族性碳環,W及X中一 -26- 201206943 方爲N-(R15),另一方爲硫原子、氧原子或硒原子,γ及z 中一方爲N-(R15)’另一方爲硫原子、氧原子或硒原子, R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表不之雜[3,2-b]雜環,環構造a及 環構造B獨立爲可具有取代基之芳香族性碳環,w&x中一 方爲N-(R15),另一方爲硫原子或氧原子,γ及z中—方爲 N-(R15)’另一方爲硫原子或氧原子,R15爲碳數1至30之烷 基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造a及 環構造B獨立爲可具有取代基之芳香族性碳環,w&x中一 方爲N-(R15)’另一方爲硫原子,γ及z中一方爲N-(R15), 另一方爲硫原子’ R15爲碳數1至30之烷基之化合物(1) 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之芳香族性碳環,W及X中一 方爲N-(R15),另一方爲硫原子或氧原子,γ與X相同,z與 W相同’R15爲碳數1至3〇之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之芳香族性碳環,W及X 中一方爲N-(r15),另一方爲硫原’子或氧原子,γ與X相同 ’Z與W相同,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之芳香族性碳環,W及X 中一方爲N-(R15),另一方爲硫原子,γ與X相同,Z與W相 -27- 201206943 同,R15爲碳數1至30之烷基之化合物(1); 環構造c爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之芳香族性雜環,W及X中一 方爲N-(R15),另一方爲硫原子、氧原子或硒原子,Y及Z 中一方爲N-(R15),另一方爲硫原子、氧原子或硒原子, R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之芳香族性雜環,W及X中一 方爲N-(R15),另一方爲硫原子或氧原子,γ及Z中一方爲 N-(R15),另一方爲硫原子或氧原子,R15爲碳數1至30之烷 基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之芳香族性雜環,w及X中一 方爲N-(R15),另一方爲硫原子,γ及z中一方爲N_(Ri5), 另一方爲硫原子,R15爲碳數1至30之烷基之化合物(1) » 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之芳香族性雜環,W及X中一 方爲N-(R15),另一方爲硫原子或氧原子,γ與X相同,z與 W相同,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之芳香族性雜環,w及X 中一方爲N-(R15),另一方爲硫原子或氧原子,γ與X相同 ,乙與\¥相同,R15爲碳數1至30之烷基之化合物(丨); -28- 201206943 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之芳香族性雜環,W及X 中一方爲N-(R15)’另一方爲硫原子,Y與X相同,z與W相 同,R15爲碳數1至30之烷基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之苯環,W及X中一方爲N-(R15),另一方爲硫原子、氧原子或硒原子,γ及Z中一方 爲N-(R15),另一方爲硫原子、氧原子或硒原子,R15爲碳 數1至30之烷基之化合物(1); 環構造C爲式(C2 )所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之苯環,w及X中一方爲N-(R15)’另一方爲硫原子或氧原子,γ及Z中一方爲N-(R15) ,另一方爲硫原子或氧原子,R15爲碳數1至30之烷基之化 合物(1 ); 環構造c爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同’且可具有取代基之苯環,w及X中一方爲Ν-β15)’ 另一方 爲硫原 子或氧 原子, γ及 Z 中 一方爲 N-(R15) ’另一方爲硫原子或氧原子,Ri5爲碳數1至30之烷基之化 合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同’且爲可具有取代基之苯環,w及X中一方爲 N-(R15),另一方爲硫原子,γ及z中一方爲N-(R15),另一 方爲硫原子’R15爲碳數1至3〇之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2_b]雜環,環構造a及 -29- 201206943 環構造B相同,且爲可具有取代基之苯環,W及X中一方爲 N-(R15),另一方爲硫原子或氧原子,Y與X相同,Z與W相 同,R15爲碳數1至30之烷基之化合物(1) ; 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之苯環,W及X中一方爲 N-(R15),另一方爲硫原子,Y與X相同,Z與W相同,R15 爲碳數1至30之烷基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同’且爲可具有鹵原子、烷基、(三烷基)矽 烷基、芳基或雜芳基之苯環,W及X中一方爲N-(R15),另 一方爲硫原子或氧原子,Y與X相同,Z與W相同,R15爲碳 數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之苯環,w及X中一方爲 N-(R15)’另一方爲硫原子,γ與X相同,z與W相同,R15 爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有鹵原子、烷基、(三院基)砂 焼基、芳基或雜芳基之苯環,W及X中一方爲n-(R15),另 一方爲硫原子’ Y與X相同,Z與W相同,Ris爲碳數1至30 之烷基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨爲可具有取代基之萘環,评及X中—方爲心 (R15),另一方爲硫原子、氧原子或硒原子,丫及2中—方 -30- 201206943 爲N-(R15)’另一方爲硫原子、氧原子或硒原子,爲碳 數1至30之烷基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之萘環,中一方爲… (R15),另一方爲硫原子或氧原子,γ及Z中一方爲n-(R15) ’另一方爲硫原子或氧原子,R15爲碳數1至30之烷基之化 合物(1 ): 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之萘環,w及X中一方爲 N-(R15),另一方爲硫原子或氧原子,γ及z中一方爲N-(R15)’另一方爲硫原子或氧原子,R15爲碳數1至30之垸基 之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之萘環,w及X中一方爲 N-(R15)’另一方爲硫原子,γ及z中一方爲N-(R15),另一 方爲硫原子,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之萘環,w及X中一方爲 N-(R15),另一方爲硫原子或氧原子,γ與X相同,z與W相 同,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有鹵原子、烷基、(三烷基)矽 烷基、芳基或雜芳基之萘環,W及X中一方爲N-(R15),另 一方爲硫原子或氧原子,Y與X相同,Z與W相同,R15爲碳 -31 - 201206943 數1至30之烷基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之萘環,W&x中一方爲 N-(R15)’另一方爲硫原子,Y與X相同,z與W相同,R15 爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有鹵原子、烷基、(三烷基)矽 烷基、芳基或雜芳基之萘環,W及X中一方爲N-(R15),另 一方爲硫原子,Y與X相同,Z與W相同,R15爲碳數1至30 之烷基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之噻吩環,w及X中一方爲Ν-ίΚ·15), 另 一方爲 硫原子 、氧原 子或硒 原子, γ及 Z 中一方 爲N-(R15)’另一方爲硫原子、氧原子或硒原子,爲碳 數1至30之烷基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B獨立爲可具有取代基之噻吩環,w及X中一方爲N-(R15)’另一方爲硫原子或氧原子,Y及Z中一方爲N-(R15) ,另一方爲硫原子或氧原子’ R15爲碳數1至30之烷基之化 合物(1 ): 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同’且爲可具有取代基之噻吩環,w及X中一方 爲N-(R15),另一方爲硫原子或氧原子,γ及z中一方爲N-(R15),另一方爲硫原子或氧原子,R15爲碳數1至30之烷基 -32- 201206943 之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之噻吩環,w及X中一方 爲N-(R15),另一方爲硫原子,Y及Z中一方爲N-(R15),另 一方爲硫原子,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之噻吩環,w及X中一方 爲N-(R15)’另一方爲硫原子或氧原子,γ與X相同,z與W 相同,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有鹵原子、烷基、(三烷基)矽 烷基、芳基或雜芳基之噻吩環,W及X中一方爲N-(R15), 另一方爲硫原子或氧原子,Y與X相同,Z與W相同,R15爲 碳數1至3〇之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有取代基之噻吩環,w及X中一方 爲N-(R15),另一方爲硫原子,γ與X相同,z與w相同, R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造a及 環構造B相同,且爲可具有鹵原子、烷基、(三烷基)砂 烷基、芳基或雜芳基之噻吩環,W及X中一方爲N-(R15), 另一方爲硫原子,γ與X相同,Z與W相同,R15爲碳數 30之烷基之化合物(1 ); 環構造C爲式(C2)所表示之雜[3,2_b]雜環,環構造a及 -33- 201206943 環構造B相同,且爲可具有鹵原子、烷基、(三烷基)矽 烷基、芳基或雜芳基之苯并[b]噻吩環,W及X中一方爲Ν-β15) , 另一方 爲硫原 子或氧 原子, Y與 X相同, Z與 W相同 •R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造Α及 環構造B相同,且爲可具有取代基之苯并[b]噻吩環,W及 X中一方爲N-(R15),另一方爲硫原子,Y與X相同,Z與W 相同,R1 5爲碳數1至30之烷基之化合物(1); 環構造C爲式(C2)所表示之雜[3,2-b]雜環,環構造A及 環構造B相同,且爲可具有鹵原子、烷基、(三烷基)矽 烷基、芳基或雜芳基之苯并[b]噻吩環,W及.X中一方爲N-(R15),另一方爲硫原子,Y與X相同,Z與W相同,R15爲 碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B獨立爲可具有取代基之芳香族性碳 環,W及X中一方爲N-(R15),另一方爲硫原子、氧原子或 硒原子’ Y及Z中一方爲N-(R15),另一方爲硫原子、氧原 子或硒原子,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B獨立爲可具有取代基之芳香族性碳 環,W及X中一方爲N-(R15),另一方爲硫原子或氧原子, Y及Z中一方爲N-(R15)’另一方爲硫原子或氧原子,R15爲 碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[1,2-b: 4,5-b’]二雜環 -34- 201206943 ,環構造A及環構造B獨立爲可具有取代基之芳香族性碳 環,W及X中一方爲N-(R15),另一方爲硫原子,Y及Z中一 方爲N-(R15),另一方爲硫原子,R15爲碳數1至30之烷基之 化合物(1 ); 環構造C爲式(C3)所表示之苯并[i,2-b: 4,5-b’]二雜環 ,環構造A及環構造B獨立爲可具有取代基之芳香族性碳 環,W及X中一方爲N-(R15),另一方爲硫原子或氧原子, Y與X相同,Z與W相同,R15爲碳數1至30之烷基之化合物 (1 ); 環構造C爲式(C3)所表示之苯并[i,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之芳香族 性碳環’ W及X中一方爲N-(R15),另一方爲硫原子或氧原 子’ Y與X相同’ Z與W相同,R15爲碳數1至30之烷基之化 合物(1 ); 環構造C爲式(C3)所表示之苯并[i,2-b: 4,5-b’]二雜環 ,環構造Λ及環構造B獨立爲可具有取代基之芳香族性雜 環,W及X中一方爲N-(R15)’另一方爲硫原子、氧原子或 硒原子,Y及Z中一方爲N-(R15),另一方爲硫原子、氧原 子或硒原子’R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[i,2-b: 4,5-b,]二雜環 ’環構造A及環構造B獨立爲可具有取代基之芳香族性雜 環’ W及X中一方爲N_(Ri5),另一方爲硫原子或氧原子, Y及Z中一方爲N-(R15)’另一方爲硫原子或氧原子,Ri5爲 碳數1至30之烷基之化合物(1); -35- 201206943 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B獨立爲可具有取代基之芳香族性雜 環,W及X中一方爲N-(R15),另一方爲硫原子,Y及Z中一 方爲N-(R15),另一方爲硫原子,R15爲碳數1至30之烷基之 化合物(1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B獨立爲可具有取代基之芳香族性雜 環,W及X中一方爲N-(R15),另一方爲硫原子或氧原子, Y與X相同,Z與W相同,R15爲碳數1至30之烷基之化合物 (1 ); 環構造c爲式(C3)所表示之苯并[l,2-b: 4,5-b,]二雜環 ’環構造A及環構造B相同,且爲可具有取代基之芳香族 性雜環’ W及X中一方爲N-(R15),另一方爲硫原子或氧原 子’ Y與X相同,2:與”相同,R15爲碳數1至30之烷基之化 合物(1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b,]二雜環 ’環構造A及環構造B相同,且爲可具有取代基之芳香族(wherein P and Q are independently a sulfur atom 'an oxygen atom, a selenium atom or a ruthenium atom, and the benzene ring constituting the above ring may have a substituent). In the formulae (C2) and (C3), p and q are preferably, The independent sulfur atom 'oxygen atom or selenium atom, more preferably a sulfur atom or an oxygen atom, particularly preferably a sulfur atom. The substituent of the benzene ring constituting the ring represented by the above formulas (C1) and (C3) is the same as the substituent of the ring structure A and the ring structure B, and the substituent is preferably the same as the ring structure A and the ring structure b. Preferred substituents. -17- 201206943 The ring represented by formula (C2) such as 'thieno[3,2_b]thiophene ring, furo[3,2-b]furan ring, selenyl[3,2_b]selenophene ring, thieno[ 32b] furan ring, thieno[3,2-b] selenophene ring and selenyl [3,2-b]furan ring, preferably benzophenan [3,2-b]thiophene ring (C3) The ring represented is such as 'benzo[i,2_b: 4,5 rush,] dithiophene ring, benzo[l,2-b: 4,5-b']difuran ring and benzo[ij-b: 4,5_b,] - a selenophene ring, preferably a benzo[ij-b: 4,5-b']dithiophene ring and a benzo[l,2-b:4,5-b']difuran ring More preferably, it is benzo: 4,5-b,] dipyrene ring. In the α-form (1), the ring structure C is a benzene ring represented by the formula (C1), and when X and oxime are independently N-(R15), the ring structure VIII and the ring structure Β are independently a scent having a substituent. The group heterocyclic ring 'in this case, W and z are preferably an independent sulfur atom, an oxygen atom or a selenium atom, and more preferably W and Z are independently a sulfur atom or an oxygen atom 'W and Z are particularly preferably a sulfur atom. Further, in this case, X and γ are preferably the same N-(R15p compound (1), and when ring structure C is a benzene ring represented by formula (C1), it is preferred that 'X and Y are independently a sulfur atom or an oxygen atom. Or a selenium atom, W and z are independently N-(R15) is preferred as 'X and γ are sulfur atoms or oxygen atoms, and 2 is independently N-(R15) is preferred, and X and Y are sulfur atoms. 2 is independently N_(Rl5). Further, at this time, W and Z are the same N-(R15). In the compound (1), the ring structure is represented by the formula (C2) [3, 2_ b The heterocyclic ring or the benzo[i,2_b : 4,5-b,] diheterocyclic ring represented by the formula (C3) is preferably 'W and one of X is N-(R15)' and the other is sulfur. Atom, oxygen atom or sun atom 'Y and Z are N-(R15), the other is a sulfur atom, • 18 - 201206943 oxygen atom or selenium atom, more preferably, W and χ one is ^(7)] 5), the other side is a sulfur atom or an oxygen atom, one of γ and Z is N-(R15), the other is a sulfur atom or an oxygen atom', particularly preferably, one of W and X is N-(R15), and One is a sulfur atom or an oxygen atom, γ is the same as X, and Z is the same as W. Compound (1), for example, ring structure C is a benzene ring represented by formula (C1), ring structure a and ring structure b are independently an aromatic hetero ring which may have a substituent, and 乂 and γ are independently N_(R15) ' w and Z are the compounds of a sulfur atom, an oxygen atom or a selenium atom (^); the ring structure C is a benzene ring represented by the formula (C1), the ring structure a and the ring structure b are the same 'and may have a substituent Aromatic heterocyclic ring, X and γ are the same N-(R15)' W and Z is a compound of sulfur atom, oxygen atom or selenium atom (1); ring structure C is a benzene ring represented by formula (C1) , a ring structure A and a ring structure B are the same 'and are aromatic heterocycles which may have a substituent, X and γ are the same N-(R15)'w and Z is a compound independently a sulfur atom or an oxygen atom (1) The ring structure C is a benzene ring represented by the formula (C1), the ring structure a and the ring structure b are the same 'and are aromatic heterocyclic rings which may have a substituent, and X and γ are the same N-(R15), W And Z is a sulfur atom compound (i); ring structure C is a benzene ring represented by formula (C1), ring structure a and ring structure b are thiophene rings which may have a substituent, and ¥ is independently n_(ri5 ), rM is carbon number 1 a compound (1) in which the W and Z are independently a sulfur atom, an oxygen atom or a selenium atom; the ring structure C is a benzene ring represented by the formula (C1), and the ring structure a and the ring structure b are the same 'and a thiophene ring which may have a substituent, X and γ are the same n_(Ri5) • 19-201206943 'R15 is an alkyl group having 1 to 30 carbon atoms' and a compound in which Z is independently a sulfur atom, an oxygen atom or a selenium atom ( 1); Ring structure C is a benzene ring represented by formula (C1), ring structure a and ring structure B are the same, and are thiophene rings which may have a substituent, and X and γ are the same N-(R15) ' R15 is a compound having a carbon number of 1 to 30, a compound (1) wherein W and z are each independently a sulfur atom or an oxygen atom; and a ring structure C is a benzene ring represented by the formula (C1), the ring structure a and the ring structure B are the same, and a thiophene ring which may have a substituent, X and γ are the same N-(R15) ' R15 is a C 1 to 30 alkyl group 'W and Z is a sulfur atom compound (1) Ring structure C is a formula (C1) The represented benzene ring, ring structure A and ring structure B are independently thiophene rings which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and X and Y are independently N-(R15 ), R15 is carbon number 1 to 30 The compound (i) wherein the alkyl group 'W and Z are independently a sulfur atom, an oxygen atom or a selenium atom: The ring structure C is a benzene ring represented by the formula (ci), and the ring structure A and the ring structure B are the same 'and may have a halogen A thiophene ring of an atom, an alkyl group, a (trialkyl)decylalkyl group, an aryl group or a heteroaryl group, X and Y are the same N-(R15), and R15 is a fluorenyl group having a carbon number of 1 to 30 'W and Z independent a compound (1) which is a sulfur atom, an oxygen atom or a selenium atom: The ring structure C is a benzene ring represented by the formula (C1), and the ring structure A and the ring structure B are the same 'and may have a halogen atom, an alkyl group, (three) Alkyl, aryl or heteroaryl thiophene ring, X and γ are the same N-(Ri5), and Ri5 is a carbon number of 1 to 30. The W and Z are independently a sulfur atom or an oxygen atom. Compound (1) -20- 201206943 Ring structure C is a benzene ring represented by formula (Cl), ring structure A and ring structure B are the same ' and may have a halogen atom, an alkyl group, a (trialkyl) decyl group, a aryl group a thiophene ring of a heteroaryl group, X and Y are the same N-(Ri", Ri5 is a C 1 to 30 alkyl group 'W and Z is a sulfur atom compound (丨); Benzene ring represented by (Cl) The ring structure a and the ring structure B are independently a benzo[b]thiophene ring which may have a substituent, X and γ are independently N-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and W and Z are independently sulfur. a compound of an atom, an oxygen atom or a selenium atom (1); a ring structure C is a benzene ring represented by the formula (C1), and the ring structure A and the ring structure B are independently a halogen atom, an alkyl group, or a (trialkyl) decane. a benzo[b]thiophene ring of a aryl, aryl or heteroaryl group, X and Y are independently N-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and Z is independently a sulfur atom, an oxygen atom or a compound of a selenium atom (1); a ring structure C is a benzene ring represented by the formula (C1), and the ring structure a and the ring structure B are the same 'and may have a halogen atom, an alkyl group, a (trialkyl) nonyl group, and an aromatic group. a benzo[b]thiophene ring of a heteroaryl group, X and γ are the same n-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and Z is independently a sulfur atom, an oxygen atom or a selenium atom. Compound (1); ring structure C is a benzene ring represented by formula (C1), ring structure A and ring structure B are the same 'and may have a tooth atom, an alkyl group, a (trialkyl) decyl group, an aryl group or Heteroaryl benzo[b]thiophene ring, X and γ The same n-(R15), R15 is a compound having a carbon number of 1 to 30 'W and Z is independently a sulfur atom or an oxygen atom (1); -21 - 201206943 The ring structure C is represented by the formula (Cl) The benzene ring, ring structure A and ring structure B are the same 'and are benzo[b]thiophene rings which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and X and γ are the same N-(r15), R15 is a compound having a carbon number of 1 to 30, and W and Z are a sulfur atom (1); ring structure C is a benzene ring represented by formula (C1), ring structure a and ring structure B is independently an aromatic carbocyclic ring which may have a substituent, and W and Z are independently N-(R15) 'X and Y are independently a compound of a sulfur atom, an oxygen atom or a selenium atom (1); The benzene ring represented by C1) is the same as the ring structure a and the ring structure B, and is an aromatic carbocyclic ring which may have a substituent. W and Z are the same N-(R15), and X and Y are independently a sulfur atom. Compound (1) of oxygen atom or selenium atom: Ring structure C is a benzene ring represented by formula (C1), ring structure A and ring structure B are the same 'and are aromatic carbon rings which may have a substituent, W and Z For the same >^-(1115), 乂 and independence a compound (1) which is a sulfur atom or an oxygen atom; a ring structure C is a benzene ring represented by the formula (C1), and the ring structure A and the ring structure B are the same, and are aromatic carbon rings which may have a substituent, and Z is the same N-(R15), X and Y are sulfur atom compounds (1); Ring structure C is a benzene ring represented by formula (C1), ring structure A and ring structure B are independently capable of having a substituent a benzene ring, wherein W and Z are independently N-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and X and Y are independently a compound of a sulfur atom, an oxygen atom or a selenium atom (1): ring structure C is a formula ( The benzene ring represented by C1) is the same as the ring structure A and the ring structure B, and is a benzene ring which may have a substituent, W and Z are the same N-(R15), and R15 is an alkyl group having 1 to 30 carbon atoms. X and Y are independently a sulfur atom, an oxygen atom or a compound of -22-201206943 selenium atom (1); ring structure C is a benzene ring represented by formula (C1), ring structure A and ring structure B are the same 'and may have a benzene ring of a substituent, wherein W and Z are the same N-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and X and γ are each independently a sulfur atom or an oxygen atom (1); Benzene ring represented by (C1), ring structure A and The ring structure B is the same, and is a benzene ring which may have a substituent, W and Z are the same N-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and X and γ are sulfur atoms; The benzene ring represented by the formula (C1), the ring structure a and the ring structure B are independently a benzene ring which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and is independently Z and Z. Is N-(R15), Ris is a compound having a carbon number of 1 to 3 Å and X is independently a sulfur atom, an oxygen atom or a selenium atom. (1) » Ring structure C is a benzene represented by formula (C1) Ring, ring structure A and ring structure B are the same 'and are benzene rings which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and W and Z are the same N-(R15) , R15 is a C 1 to 30 alkyl group, X and Y are independently a compound of a sulfur atom, an oxygen atom or a selenium atom (1 ); a ring structure C is a benzene ring represented by the formula (C1), a ring structure a and a ring Structure B is the same and is a benzene ring which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and W and Z are the same N-(R15), and R15 is a carbon number of 1 to 30 alkyl, X and Y are independently a sulfur atom or an oxygen atom Compound (1); Ring structure C is a benzene ring represented by formula (C1), ring structure A and ring structure B are the same, and may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl-23 - 201206943 or a heterocyclic benzene ring 'W and Z are the same N-(R15), R15 is a C 1 to 30 alkyl group, X and Y are a sulfur atom compound (1); The benzene ring represented by the formula (C1), the ring structure A and the ring structure B are independently a naphthalene ring which may have a substituent 'W and Z is independently n-(R15), and R15 is an alkyl group having a carbon number of 1 to 30' X And the compound (1) in which γ is independently a sulfur atom, an oxygen atom or a selenium atom; the ring structure C is a benzene ring represented by the formula (C1), the ring structure A and the ring structure B are the same 'and a naphthalene ring which may have a substituent , W and Z are the same N-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and X and Y are independently a compound of sulfur atom, oxygen atom or selenium atom (1); ring structure C is formula (C1) The benzene ring represented by the ring structure A and the ring structure B are the same, and are a naphthalene ring which may have a substituent, W and Z are the same N-(R15), and R15 is an alkyl group having 1 to 30 carbon atoms, X And Y is independently a compound of a sulfur atom or an oxygen atom (1 ); C is a benzene ring represented by the formula (C1), the ring structure A and the ring structure B are the same, and are a naphthalene ring which may have a substituent, W and Z are the same N-(R15), and R15 is a carbon number of 1 to 30. Alkyl group, X and Y are compounds of a sulfur atom (1); ring structure C is a benzene ring represented by formula (C1), ring structure A and ring structure B independently may have a halogen atom, an alkyl group, (trioxane) a naphthyl group of an alkyl group, an aryl group and a heteroaryl group, wherein W and Z are independently N-(R15), R15 is a group having a carbon number of 1 to 1, and X and Y are independently a sulfur atom, an oxygen atom or a selenium atom. The compound (1) and the ring structure c are the same as the benzene ring represented by the formula (C1), and the ring structure A and the ring structure B are the same, and may have a halogen atom, an alkyl group, a (three-compartment) sand courtyard group, an aryl group. 24- 201206943 or heteroaryl naphthalene ring 'good and 2 are the same n_(Ri5), Rl5 is an alkyl group having 1 to 30 carbon atoms, and X and Y are independently a compound of a sulfur atom, an oxygen atom or a selenium atom ( 1): The ring structure C is a benzene ring represented by the formula (C1), and the ring structure a and the ring structure 8 are the same, and may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group. Naphthalene ring, W and Z are the same N-(R15) R15 is a compound having a carbon number of 30, X and Y are each a compound of a sulfur atom or an oxygen atom (丨); a ring structure C is a benzene ring represented by the formula (C1), and the ring structure a and the ring structure b are the same, and The naphthalene ring 'W and Z which may have a halogen atom, an alkyl group, an alkyl group, a (trialkyl) nonyl group, an aryl group or a heterocyclic group are the same N_(R15), and R15 is a hospital base 'X with a carbon number of 1 to 30 and Y is a sulfur atom compound (1); ring structure C is a benzene ring represented by formula (C1), ring structure a and ring structure b are independently a thiophene ring which may have a substituent, and W and Z are independently N-(R15 R15 is a C 1 to 30 alkyl group, and X and Y are each independently a sulfur atom, an oxygen atom or a selenium atom. (1): The ring structure C is a benzene ring represented by the formula (C1), and the ring structure a and The ring structure B is the same 'and is a thiophene ring which may have a substituent, W and Z are the same N-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and X and Y are independently a sulfur atom, an oxygen atom or selenium. Atom compound (1); Ring structure C is a benzene ring represented by formula (C1), ring structure a and ring structure B are the same, and are thiophene rings which may have a substituent, and W and Z are the same N-( R15), R15 is an alkyl group having 1 to 30 carbon atoms X and Y are each independently a sulfur atom or an oxygen atom (1); ring structure C is a benzene ring represented by formula (C1), ring structure A and ring structure B phase -25-201206943 are the same, and may have a substituent a thiophene ring, wherein w and z are the same N-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and X and γ are a sulfur atom; (1) ring structure c is benzene represented by formula (C1) Ring, ring structure A and ring structure B are independently thiophene rings which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and W and Z are independently N-(R15), and R15 is a compound having a carbon number of 1 to 30, X and Y independently being a sulfur atom, an oxygen atom or a selenium atom (1 ): The ring structure C is a benzene ring represented by the formula (C1), and the ring structure a and the ring structure B are the same ' And the thiophene ring 'W and Z which may have a halogen atom 'alkyl group, a (trialkyl) decyl group, an aryl group or a heteroaryl group are the same N-(R15), and R15 is an alkyl group having 1 to 30 carbon atoms. a compound (1) wherein X and Y are independently a sulfur atom, an oxygen atom or a selenium atom; and a ring structure C is a benzene ring represented by the formula (C1), the ring structure A and the ring structure B are the same, and may have a halogen atom , alkyl, (trialkyl) fluorene a thiophene ring of an alkyl group, an aryl group or a heteroaryl group, wherein W and Z are the same N-(R15), R15 is an alkyl group having 1 to 30 carbon atoms, and X and Y are independently a compound of a sulfur atom or an oxygen atom ( 1) t ring structure c is a benzene ring represented by formula (Cl), ring structure A and ring structure B are the same, and may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group. a thiophene ring, wherein W and Z are the same N-(R15), R15 is an alkyl group having 1 to 3 carbon atoms, and X and Y are a sulfur atom (1); ring structure C is represented by formula (C2) Hetero[3,2-b]heterocycle, ring structure A and ring structure B are independently aromatic carbon rings which may have a substituent, and X and -26-201206943 are N-(R15), and One of which is a sulfur atom, an oxygen atom or a selenium atom, one of γ and z is N-(R15)' and the other is a sulfur atom, an oxygen atom or a selenium atom, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms (1) The ring structure C is a heterocyclic [3,2-b] heterocycle represented by the formula (C2), and the ring structure a and the ring structure B are independently an aromatic carbocyclic ring which may have a substituent, and one of the w&x N-(R15), the other side is a sulfur atom or an oxygen atom, and γ and z are in the form of N-(R15)' The compound is a sulfur atom or an oxygen atom, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; the ring structure C is a hetero [3,2-b] heterocyclic ring represented by the formula (C2), a ring structure a and The ring structure B is independently an aromatic carbocyclic ring which may have a substituent, and one of w&x is N-(R15)' and the other is a sulfur atom, one of γ and z is N-(R15), and the other is sulfur. A compound in which the atom ' R15 is an alkyl group having 1 to 30 carbon atoms (1) The ring structure C is a hetero [3,2-b] hetero ring represented by the formula (C2), and the ring structure A and the ring structure B may independently have The aromatic carbocyclic ring of the substituent, one of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, γ is the same as X, and z is the same as W. 'R15 is an alkyl group having 1 to 3 carbon atoms. The compound (1); the ring structure C is a hetero [3,2-b] heterocyclic ring represented by the formula (C2), the ring structure A and the ring structure B are the same, and are aromatic carbon rings which may have a substituent , one of W and X is N-(r15), the other is a sulphur pro- or an oxygen atom, γ is the same as X, 'Z is the same as W, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; The ring structure C is a hetero [3,2-b] heterocycle represented by the formula (C2), and the ring structure A and the ring structure B are the same, and An aromatic carbocyclic ring having a substituent, one of W and X is N-(R15), the other is a sulfur atom, γ is the same as X, Z is the same as W phase -27-201206943, and R15 is a carbon number of 1 to 30. The alkyl group compound (1); the ring structure c is a hetero [3,2-b] heterocyclic ring represented by the formula (C2), and the ring structure A and the ring structure B are independently an aromatic heterocyclic ring which may have a substituent. One of W and X is N-(R15), the other is a sulfur atom, an oxygen atom or a selenium atom, one of Y and Z is N-(R15), and the other is a sulfur atom, an oxygen atom or a selenium atom, R15 a compound (1) having an alkyl group having 1 to 30 carbon atoms; a ring structure C is a hetero [3,2-b] hetero ring represented by the formula (C2), and the ring structure A and the ring structure B are independently a substituent group The aromatic heterocyclic ring, one of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, one of γ and Z is N-(R15), and the other is a sulfur atom or an oxygen atom, R15 a compound (1) having an alkyl group having 1 to 30 carbon atoms; a ring structure C is a hetero [3,2-b] hetero ring represented by the formula (C2), and the ring structure A and the ring structure B are independently a substituent group An aromatic heterocyclic ring, one of w and X is N-(R15), and the other is a sulfur atom, γ A compound in which one of z is N_(Ri5), the other is a sulfur atom, and R15 is an alkyl group having 1 to 30 carbon atoms (1) » The ring structure C is a heteropoly group represented by the formula (C2) [3, 2-b] The heterocyclic ring, ring structure A and ring structure B are independently an aromatic hetero ring which may have a substituent, and one of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, and γ is the same as X, z Like W, R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; ring structure C is a hetero [3,2-b] heterocyclic ring represented by formula (C2), and ring structure A and ring structure B are the same. And an aromatic heterocyclic ring which may have a substituent, one of w and X is N-(R15), the other is a sulfur atom or an oxygen atom, γ is the same as X, B is the same as \¥, and R15 is a carbon number. a compound of 1 to 30 alkyl groups (丨); -28- 201206943 Ring structure C is a hetero [3,2-b] heterocycle represented by formula (C2), ring structure A and ring structure B are the same, and An aromatic heterocyclic ring having a substituent, wherein one of W and X is N-(R15)' and the other is a sulfur atom, Y is the same as X, z is the same as W, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms. (1); Ring structure C is a heterocyclic [3,2-b] heterocycle represented by formula (C2), ring structure A and ring structure B is independently a benzene ring which may have a substituent, and one of W and X is N-(R15), the other is a sulfur atom, an oxygen atom or a selenium atom, and one of γ and Z is N-(R15), and the other is a sulfur atom, an oxygen atom or a selenium atom, R15 is a compound having an alkyl group having 1 to 30 carbon atoms; (1); a ring structure C is a hetero [3,2-b] heterocyclic ring represented by the formula (C2), ring structure A And ring structure B is independently a benzene ring which may have a substituent, and one of w and X is N-(R15)', and the other is a sulfur atom or an oxygen atom, and one of γ and Z is N-(R15), and the other is a sulfur atom or an oxygen atom, R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; a ring structure c is a hetero [3,2-b] heterocyclic ring represented by the formula (C2), a ring structure A and a ring structure B is the same 'and a benzene ring which may have a substituent, one of w and X is Ν-β15)' The other is a sulfur atom or an oxygen atom, and one of γ and Z is N-(R15) 'The other is a sulfur atom or An oxygen atom, a compound (1) wherein Ri5 is an alkyl group having 1 to 30 carbon atoms; a ring structure C is a hetero [3,2-b] heterocyclic ring represented by the formula (C2), and the ring structure A and the ring structure B are the same ' And a benzene ring which may have a substituent, one of w and X is N-(R15), and the other side a sulfur atom, one of γ and z is N-(R15), and the other is a compound (1) in which a sulfur atom 'R15 is an alkyl group having 1 to 3 carbon atoms; and ring structure C is a compound represented by formula (C2) [3,2_b]heterocyclic ring, ring structure a and -29-201206943 ring structure B is the same, and is a benzene ring which may have a substituent, one of W and X is N-(R15), and the other is a sulfur atom or oxygen Atom, Y is the same as X, Z is the same as W, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms (1); ring structure C is a hetero [3,2-b] heterocyclic ring represented by formula (C2). The ring structure A and the ring structure B are the same, and are a benzene ring which may have a substituent. One of W and X is N-(R15), the other is a sulfur atom, Y is the same as X, Z is the same as W, and R15 is carbon. a compound of the alkyl group of 1 to 30 (1); a ring structure C is a hetero [3,2-b] heterocycle represented by the formula (C2), the ring structure A and the ring structure B are the same ' and may have a halogen atom a benzene ring of an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, wherein one of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, and Y is the same as X, Z and W is the same as the compound (1) wherein R15 is an alkyl group having 1 to 30 carbon atoms; the ring structure C is a hetero group represented by the formula (C2) [3, 2-b]heterocyclic ring, ring structure A and ring structure B are the same, and are a benzene ring which may have a substituent, one of w and X is N-(R15)' and the other is a sulfur atom, and γ is the same as X, z Like W, R15 is a compound of the alkyl group having 1 to 30 carbon atoms (1); ring structure C is a hetero [3,2-b] heterocycle represented by formula (C2), ring structure A and ring structure B are the same And a benzene ring which may have a halogen atom, an alkyl group, a (trimethylene) sulfonium group, an aryl group or a heteroaryl group, one of W and X is n-(R15), and the other is a sulfur atom 'Y and X is the same, Z is the same as W, and Ris is a compound (1) having an alkyl group having 1 to 30 carbon atoms; ring structure C is a hetero [3,2-b] hetero ring represented by formula (C2), ring structure A and Ring structure B is a naphthalene ring which may have a substituent, and it is considered that X is a square (R15), and the other is a sulfur atom, an oxygen atom or a selenium atom, and 2 is a square - 30-201206943 is N- (R15) 'The other side is a sulfur atom, an oxygen atom or a selenium atom, and is a compound (1) having an alkyl group having 1 to 30 carbon atoms; the ring structure C is a heteropoly group represented by the formula (C2) [3, 2-b] The heterocyclic ring, ring structure A and ring structure B are independently a naphthalene ring which may have a substituent, one of which is ... (R15), the other side A sulfur atom or an oxygen atom, a compound in which one of γ and Z is n-(R15)' and the other is a sulfur atom or an oxygen atom, and R15 is an alkyl group having 1 to 30 carbon atoms (1): Ring structure C is a formula (C2) The heterocyclic [3,2-b] heterocycle represented by the ring structure A and the ring structure B are the same, and are a naphthalene ring which may have a substituent, one of w and X is N-(R15), and the other is sulfur. One of the atoms or oxygen atoms, one of γ and z is N-(R15)', the other is a sulfur atom or an oxygen atom, and R15 is a compound of the fluorenyl group having 1 to 30 carbon atoms; (1); ring structure C is a formula (C2) The heterocyclic [3,2-b]heterocycle represented, the ring structure A and the ring structure B are the same, and is a naphthalene ring which may have a substituent, and one of w and X is N-(R15)' and the other is a sulfur atom. , one of γ and z is N-(R15), the other is a sulfur atom, and R15 is a compound of the alkyl group having 1 to 30 carbon atoms (1); the ring structure C is a heteropoly group represented by the formula (C2) [3, 2-b]heterocyclic ring, ring structure A and ring structure B are the same, and are a naphthalene ring which may have a substituent, one of w and X is N-(R15), the other is a sulfur atom or an oxygen atom, γ and X Similarly, z is the same as W, R15 is a compound having a carbon number of 1 to 30 (1); ring structure C is represented by formula (C2) a heterocyclic [3,2-b] heterocyclic ring having the same ring structure A and ring structure B, and being a naphthalene ring which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, And one of X is N-(R15), the other is a sulfur atom or an oxygen atom, Y is the same as X, Z is the same as W, and R15 is a compound (1) of carbon-31 - 201206943 alkyl having 1 to 30; The ring structure C is a heterocyclic [3,2-b] heterocyclic ring represented by the formula (C2), and the ring structure A and the ring structure B are the same, and are a naphthalene ring which may have a substituent, and one of W&x is N-( R15) 'The other side is a sulfur atom, Y is the same as X, z is the same as W, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms (1); ring structure C is a hetero group represented by formula (C2) [3, 2-b]heterocyclic ring, ring structure A and ring structure B are the same, and are a naphthalene ring which may have a halogen atom, an alkyl group, a (trialkyl)decylalkyl group, an aryl group or a heteroaryl group, and one of W and X is N-(R15), the other is a sulfur atom, Y is the same as X, Z is the same as W, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; ring structure C is a heterogeneous formula represented by formula (C2) [3,2-b]heterocyclic ring, ring structure A and ring structure B are independently a thiophene ring which may have a substituent, and one of w and X Ν-ίΚ·15), the other side is a sulfur atom, an oxygen atom or a selenium atom, one of γ and Z is N-(R15)' and the other is a sulfur atom, an oxygen atom or a selenium atom, and the carbon number is 1 to 30. Alkyl compound (1); ring structure C is a hetero [3,2-b] heterocycle represented by formula (C2), ring structure A and ring structure B are independently thiophene rings which may have a substituent, w and X One of them is N-(R15)' and the other is a sulfur atom or an oxygen atom. One of Y and Z is N-(R15), and the other is a sulfur atom or an oxygen atom. R15 is an alkyl group having 1 to 30 carbon atoms. Compound (1): Ring structure C is a hetero [3,2-b] heterocyclic ring represented by formula (C2), ring structure A and ring structure B are the same ' and are thiophene rings which may have a substituent, w and X One is N-(R15), the other is a sulfur atom or an oxygen atom, one of γ and z is N-(R15), the other is a sulfur atom or an oxygen atom, and R15 is an alkyl group having a carbon number of 1 to 30-32. Compound (1) of 201206943; ring structure C is a hetero [3,2-b] heterocycle represented by formula (C2), ring structure A and ring structure B are the same, and is a thiophene ring which may have a substituent, w And one of X is N-(R15), the other is a sulfur atom, and one of Y and Z N-(R15), the other one is a sulfur atom, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; the ring structure C is a hetero [3,2-b] heterocyclic ring represented by the formula (C2). The ring structure A and the ring structure B are the same, and are thiophene rings which may have a substituent. One of w and X is N-(R15)' and the other is a sulfur atom or an oxygen atom, γ is the same as X, and z is the same as W. R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; the ring structure C is a hetero [3,2-b] heterocyclic ring represented by the formula (C2), and the ring structure A and the ring structure B are the same and are a thiophene ring having a halogen atom, an alkyl group, a (trialkyl)decylalkyl group, an aryl group or a heteroaryl group, wherein one of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, and Y is the same as X , Z is the same as W, R15 is a compound having an alkyl group having 1 to 3 carbon atoms (1); ring structure C is a hetero [3,2-b] heterocyclic ring represented by formula (C2), ring structure A and ring The structure B is the same and is a thiophene ring which may have a substituent. One of w and X is N-(R15), the other is a sulfur atom, γ is the same as X, z is the same as w, and R15 is a carbon number of 1 to 30. Alkyl compound (1); ring structure C is a hetero [3,2-b] heterocycle represented by formula (C2), ring structure a and ring structure B is the same and is a thiophene ring which may have a halogen atom, an alkyl group, a (trialkyl)silyl group, an aryl group or a heteroaryl group, and one of W and X is N-(R15), and the other is a sulfur atom. γ is the same as X, Z is the same as W, and R15 is a compound having a carbon number of 30 (1); ring structure C is a heterocyclic [3,2_b] heterocycle represented by formula (C2), ring structure a and -33 - 201206943 The ring structure B is the same and is a benzo[b]thiophene ring which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and one of W and X is Ν-β15) The other is a sulfur atom or an oxygen atom, Y is the same as X, Z is the same as W, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms (1); ring structure C is a heteropoly group represented by formula (C2) [3] , 2-b]heterocyclic ring, ring structure Α and ring structure B are the same, and may be a benzo[b]thienyl ring which may have a substituent, one of W and X is N-(R15), and the other is a sulfur atom, Y is the same as X, Z is the same as W, and R1 5 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; ring structure C is a hetero [3,2-b] heterocyclic ring represented by formula (C2), ring The structure A and the ring structure B are the same, and may have a halogen atom, an alkyl group, a (trialkyl) nonyl group, An aryl or heteroaryl benzo[b]thiophene ring, one of W and .X is N-(R15), the other is a sulfur atom, Y is the same as X, Z is the same as W, and R15 is a carbon number of 1 to a compound of the alkyl group of 30 (1); a ring structure C is a benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3), and the ring structure A and the ring structure B are independently An aromatic carbocyclic ring which may have a substituent. One of W and X is N-(R15), and the other is a sulfur atom, an oxygen atom or a selenium atom. One of Y and Z is N-(R15), and the other is a sulfur atom, an oxygen atom or a selenium atom, R15 is a compound having a carbon number of 1 to 30 (1); and ring structure C is a benzo[l,2-b: 4,5-b represented by the formula (C3) '] Diheterocyclic ring, ring structure A and ring structure B are independently an aromatic carbocyclic ring which may have a substituent, one of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, Y and Z One of the compounds is N-(R15)', the other is a sulfur atom or an oxygen atom, and R15 is a compound having a carbon number of 1 to 30 (1); the ring structure C is a benzo[1, represented by the formula (C3). 2-b: 4,5-b']bicyclohetero-34-201206943, ring structure A and ring structure B are independently an aromatic carbocyclic ring which may have a substituent, W a compound (1) wherein one of X is N-(R15), the other is a sulfur atom, one of Y and Z is N-(R15), the other is a sulfur atom, and R15 is an alkyl group having 1 to 30 carbon atoms; The ring structure C is a benzo[i,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3), and the ring structure A and the ring structure B are independently an aromatic carbocyclic ring which may have a substituent. , one of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, Y is the same as X, Z is the same as W, and R15 is a compound having a carbon number of 1 to 30 (1); C is a benzo[i,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3), and the ring structure A and the ring structure B are the same, and are aromatic carbon rings which may have a substituent. 'W and X are N-(R15), the other is a sulfur atom or an oxygen atom 'Y is the same as X'. Z is the same as W, and R15 is a compound having a carbon number of 1 to 30 (1); C is a benzo[i,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3), and the ring structure Λ and the ring structure B are independently an aromatic heterocyclic ring which may have a substituent, W And one of X is N-(R15)' and the other is a sulfur atom, an oxygen atom or a selenium atom, one of Y and Z is N-(R15), and the other is a sulfurogen. a compound (1) wherein an oxygen atom or a selenium atom 'R15 is an alkyl group having 1 to 30 carbon atoms; and a ring structure C is a benzo[i,2-b: 4,5-b, represented by the formula (C3). The diheterocyclic ring structure A and the ring structure B are independently an aromatic heterocyclic ring having a substituent. One of W and X is N_(Ri5), the other is a sulfur atom or an oxygen atom, and one of Y and Z is N-(R15)' wherein the other is a sulfur atom or an oxygen atom, and Ri5 is a compound having an alkyl group having 1 to 30 carbon atoms (1); -35-201206943 The ring structure C is a benzo[l] represented by the formula (C3) , 2-b: 4,5-b'] diheterocyclic ring, ring structure A and ring structure B are independently an aromatic heterocyclic ring which may have a substituent, and one of W and X is N-(R15), and the other side a sulfur atom, one of Y and Z is N-(R15), the other is a sulfur atom, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; the ring structure C is a benzene represented by the formula (C3) And [l,2-b: 4,5-b'] diheterocyclic ring, ring structure A and ring structure B are independently an aromatic heterocyclic ring which may have a substituent, and one of W and X is N-(R15) The other side is a sulfur atom or an oxygen atom, Y is the same as X, Z is the same as W, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; The structure c is a benzo[l,2-b: 4,5-b,]diheterocyclic ring structure represented by the formula (C3), and the ring structure A and the ring structure B are the same, and are aromatic impurities which may have a substituent. One of the rings 'W and X is N-(R15), the other is a sulfur atom or an oxygen atom 'Y is the same as X, 2: is the same as ", and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; The ring structure C is the same as the benzo[l,2-b: 4,5-b,]diheterocyclic ring structure A and the ring structure B represented by the formula (C3), and is an aromatic group which may have a substituent.

性雜環’ W及X中—方爲N-(R15),另一方爲硫原子,Y與X 相同’ Z與W相同,R15爲碳數1至30之烷基之化合物(1 ) , 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ’環構造A及環構造b獨立爲可具有取代基之苯環,W及X 中—方爲N_(R15),另一方爲硫原子、氧原子或硒原子,Y 及2中一方爲N-(R15),另一方爲硫原子、氧原子或硒原子 -36- 201206943 ’R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b,]二雜環 ,環構造A及環構造B獨立爲可具有取代基之苯環,w及X 中一方爲N-(R15),另一方爲硫原子或氧原子,γ及z中一 方爲N-(R15),另一方爲硫原子或氧原子,R15爲碳數1至30 之烷基之化合物(1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之苯環,w 及X中一方爲n-(rm),另一方爲硫原子或氧原子,Y及Z中 一方爲N-(R15),另一方爲硫原子或氧原子,R15爲碳數1至 30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之苯環,W 及X中一方爲N-(R15),另一方爲硫原子,Y及Z中一方爲Ν-β15), 另一 方爲硫 原子, R15 爲碳數 1 至 30 之烷基之化合物 (1 ): 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之苯環,W 及X中一方爲N-(R15),另一方爲硫原子或氧原子,Y與X 相同,Z與W相同,R15爲碳數1至30之烷基之化合物(1 ) » 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之苯環,W及X中一方 -37- 201206943 爲N-(R15),另一方爲硫原子或氧原子,Y與X相同,z與W 相同,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之苯環,W及X中一方 爲N-(R15),另一方爲硫原子,Y及Z中一方爲N-(R15),另 —方爲硫原子,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之苯環,W及X中—方 爲N-(R15),另一方爲硫原子,Y與X相同,z與W相同, R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B獨立爲可具有取代基之萘環,W&x 中一方爲N-(R15),另一方爲硫原子、氧原子或硒原子,γ 及Z中一方爲N-(R15),另一方爲硫原子、氧原子或晒原子 ’ R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3 )所表示之苯并[l,2-b : 4,5-b,]二雜環 ’環構造A及環構造B獨立爲可具有取代基之萘環,%及父 中一方爲N-(R15),另一方爲硫原子或氧原子,γ及z中— 方爲N-(R15),另一方爲硫原子或氧原子,R15爲碳數1至3〇 之烷基之化合物(1 ); 環構造C爲式(C3)所表不之苯+并[l,2-b : 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之萘環,w -38- 201206943 及X中一方爲N-(R15),另一方爲硫原子或氧原子,Y及Z中 —方爲N-(R15),另一方爲硫原子或氧原子,R15爲碳數1至 30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[1,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之萘環,W 及X中一方爲N-(R15),另一方爲硫原子,Y及Z中一方爲N-(R15),另一方爲硫原子,R15爲碳數1至3 0之烷基之化合物 (1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之萘環,W 及X中一方爲N-(R15),另一方爲硫原子或氧原子,Y與X 相同,Z與W相同,R15爲碳數1至30之烷基之化合物(1) » 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之萘環,W及X中一方 爲N-(R15),另一方爲硫原子或氧原子,Y及Z中一方爲Να15), 另一方 爲硫原 子或氧 原子, R15 爲碳數 1 至 30 之院基 之化合物(1 ); 環構造C爲式(C3)所表示之苯并[1,2-b: 4,5_b’]二雜環 ’環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之萘環,W及X中一方 爲N-(R15),另一方爲硫原子,γ與X相同,Z與W相同, R15爲碳數1至30之烷基之化合物(1); -39- 201206943 環構造c爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B獨立爲可具有取代基之噻吩環,w及 X中一方爲N-(R15)’另一方爲硫原子、氧原子或硒原子, Y及Z中一方爲N-(R15),另一方爲硫原子、氧原子或硒原 子,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B獨立爲可具有取代基之噻吩環,W及 X中一方爲N-(R15),另一方爲硫原子或氧原子,Y及Z中一 方爲N-(R15),另一方爲硫原子或氧原子,R15爲碳數1至30 之烷基之化合物(1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之噻吩環 ,…及乂中一方爲N-(R15),另一方爲硫原子或氧原子,Y 及Z中一方爲N-(R15),另一方爲硫原子或氧原子,R15爲 碳數1至30之烷基之化合物(1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之噻吩環 ,W&X中一方爲N-(R15),另一方爲硫原子,Y及Z中一方 爲N-(R15),另一方爲硫原子,R15爲碳數1至30之烷基之化 合物(1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之噻吩環 ,W&X中一方爲N-(R15),另一方爲硫原子或氧原子,Y 與X相同,Z與W相同,R15爲碳數1至30之烷基之化合物( -40- 201206943 1 ): 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b,]二雜環 ’環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之噻吩環,W及X中一 方爲N-(R15)’另一方爲硫原子或氧原子,γ及z中一方爲 N-(R15),另一方爲硫原子或氧原子,Ri5爲碳數1至30之烷 基之化合物(1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ’環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之噻吩環,W及X中一 方爲N-(R15),另一方爲硫原子,γ及z中一方爲N-(R15), 另一方爲硫原子,R15爲碳數1至30之烷基之化合物(1) , 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之噻吩環 ,W及X中一方爲N-(R15),另一方爲硫原子,Y與X相同, Z與W相同,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之噻吩環,W及X中一 方爲N-(R15),另一方爲硫原子,Y與X相同,Z與W相同, R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B獨立爲可具有取代基之苯并[b]噻吩 201206943 環,W及X中一方爲N-(R15),另一方爲硫原子、氧原子或 硒原子,Y及Z中一方爲N-(R15),另一方爲硫原子、氧原 子或硒原子,R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2_b: 4,5-b’]二雜環 ’環構造A及環構造B獨立爲可具有取代基之苯并[b]噻吩 環’ W及X中一方爲N-(R15),另一方爲硫原子或氧原子, Y及Z中一方爲>|_(尺15),另一方爲硫原子或氧原子,R15爲 碳數1至30之烷基之化合物(1 ); 環構造C爲式(C3)所表示之苯并[1,2-b: 4,5-b,]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之苯并[b] 噻吩環’ W及X中一方爲N-(R15),另一方爲硫原子或氧原 子’ Y及Z中一方爲N-(R15),另一方爲硫原子或氧原子, R15爲碳數1至30之烷基之化合物(1); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b,]二雜環 ’環構造A及環構造B相同,且爲可具有取代基之苯并[b] 噻吩環,W及X中一方爲N-(R15),另一方爲硫原子,Y及Z 中一方爲N-(R15),另一方爲硫原子,Ri5爲碳數1至30之烷 基之化合物(1 ); 環構造C爲式(C3)所表示之苯并[i,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有取代基之苯并[b] 噻吩環,W及X中一方爲N-(R15),另一方爲硫原子或氧原 子,Y與X相同,2與W相同,Ris爲碳數1至3〇之烷基之化 合物(1 ); 環構造C爲式(C3)所表示之苯并[i,2-b: 4,5-b’]二雜環 -42- 201206943 ,環構造A及環構造B相同’且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之苯并[b]噻吩環,W及 X中一方爲N-(R15),另一方爲硫原子或氧原子,Y及冗中~ 方爲N-(R15),另一方爲硫原子或氧原子,R15爲碳數1至30 之烷基之化合物(1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之苯并[b]噻吩環,W及 X中一方爲NjR15),另一方爲硫原子,Y及Z中一方爲Ν-β15)’ 另一 方爲硫 原子, R15 爲碳數 1 至 30 之 烷基之 化合物 (1 ); 環構造C爲式(C3)所表示之苯并[l,2-b: 4,5-b’]二雜環 ,環構造A及環構造B相同,且爲可具有鹵原子、烷基、 (三烷基)矽烷基、芳基或雜芳基之苯并[b]噻吩環,W及 X中一方爲N-(R15),另一方爲硫原子,γ與X相同,z與w 相同,R15爲碳數1至30之烷基之化合物(1)。 化合物(1)如下述式(1-1)至式(1-4 5)、式(2-1)至式(2_65)及式(3-1)至式(3-90)所表示之化合 物。 -43- 201206943The heterocyclic ring 'W and X' are in the form of N-(R15), the other is a sulfur atom, Y is the same as X', and Z is the same as W, and R15 is a compound having a carbon number of 1 to 30 (1), ring The structure C is a benzo[l,2-b:4,5-b']diheterocyclic ring structure represented by the formula (C3), and the ring structure b is independently a benzene ring which may have a substituent, W and X. The middle side is N_(R15), the other side is a sulfur atom, an oxygen atom or a selenium atom, one of Y and 2 is N-(R15), and the other side is a sulfur atom, an oxygen atom or a selenium atom-36-201206943 'R15 a compound (1) having an alkyl group having 1 to 30 carbon atoms; a ring structure C is a benzo[l,2-b:4,5-b,]diheterocyclic ring represented by the formula (C3), a ring structure A and The ring structure B is independently a benzene ring which may have a substituent, one of w and X is N-(R15), the other is a sulfur atom or an oxygen atom, one of γ and z is N-(R15), and the other is sulfur. a compound (1) wherein an atom or an oxygen atom, R15 is an alkyl group having 1 to 30 carbon atoms; and a ring structure C is a benzo[l,2-b:4,5-b']dimer represented by the formula (C3) The ring, the ring structure A and the ring structure B are the same, and are a benzene ring which may have a substituent, one of w and X is n-(rm), and the other is a sulfur atom or an oxygen source. a compound (1) in which one of Y and Z is N-(R15), the other is a sulfur atom or an oxygen atom, and R15 is an alkyl group having 1 to 30 carbon atoms; the ring structure C is represented by the formula (C3) Benzo[l,2-b: 4,5-b']bicyclohetero, ring structure A and ring structure B are the same, and is a benzene ring which may have a substituent, and one of W and X is N-(R15) , the other is a sulfur atom, one of Y and Z is Ν-β15), the other is a sulfur atom, and R15 is a compound having a carbon number of 1 to 30 (1): The ring structure C is represented by the formula (C3) Benzo[l,2-b: 4,5-b']bicyclohetero, ring structure A and ring structure B are the same, and is a benzene ring which may have a substituent, and one of W and X is N-(R15 The other is a sulfur atom or an oxygen atom, Y is the same as X, Z is the same as W, and R15 is a compound having 1 to 30 carbon atoms. (1) » Ring structure C is a benzene represented by formula (C3) [l,2-b: 4,5-b']diheterocyclic ring, ring structure A and ring structure B are the same, and may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group The benzene ring, one of W and X -37-201206943 is N-(R15), the other is a sulfur atom or an oxygen atom, Y is the same as X, and z is W phase , R15 is a compound having a carbon number of 1 to 30 (1); ring structure C is a benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3), ring structure A and ring structure B are the same, and are a benzene ring which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and one of W and X is N-(R15), and the other is a sulfur atom, one of Y and Z is N-(R15), the other is a sulfur atom, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms; (1); ring structure C is a benzene represented by formula (C3) And [l,2-b: 4,5-b'] diheterocyclic ring, ring structure A and ring structure B are the same, and may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a hetero a benzene ring of an aryl group, a compound of N and (R15) in W and X, a sulfur atom in the other, Y is the same as X, z is the same as W, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms (1) The ring structure C is a benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3), and the ring structure A and the ring structure B are independently a naphthalene ring which may have a substituent, W& One of x is N-(R15), the other is a sulfur atom, an oxygen atom or a selenium atom, one of γ and Z is N-(R15), and the other is a sulfur atom, an oxygen atom or a sun. The compound 'R15 is a compound having a carbon number of 1 to 30 (1); the ring structure C is a benzo[l,2-b:4,5-b,]diheterocyclic ring represented by the formula (C3) The structure A and the ring structure B are independently a naphthalene ring which may have a substituent, and one of the % and the parent is N-(R15), the other is a sulfur atom or an oxygen atom, and the γ and z are N-(R15), The other is a sulfur atom or an oxygen atom, and R15 is a compound (1) having an alkyl group having 1 to 3 carbon atoms; the ring structure C is benzene + [1, 2-b: 4, which is represented by the formula (C3). 5-b']bicyclohetero, ring structure A and ring structure B are the same, and may be a naphthalene ring having a substituent, w -38- 201206943 and one of X is N-(R15), and the other is a sulfur atom or An oxygen atom, a compound (1) in which Y and Z are N-(R15), the other is a sulfur atom or an oxygen atom, R15 is an alkyl group having 1 to 30 carbon atoms; and a ring structure C is a formula (C3) The benzo[1,2-b: 4,5-b'] diheterocyclic ring is represented by the same ring structure A and ring structure B, and is a naphthalene ring which may have a substituent, and one of W and X is N-( R15), the other is a sulfur atom, one of Y and Z is N-(R15), the other is a sulfur atom, and R15 is a compound of the alkyl group having 1 to 30 carbon atoms (1); The structure C is a benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3), and the ring structure A and the ring structure B are the same, and are a naphthalene ring which may have a substituent, W And one of X is N-(R15), the other is a sulfur atom or an oxygen atom, Y is the same as X, Z is the same as W, and R15 is a compound having 1 to 30 carbon atoms (1) » Ring structure C is The benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3), the ring structure A and the ring structure B are the same, and may have a halogen atom, an alkyl group, (trialkyl group) a naphthalene ring of a decyl group, an aryl group or a heteroaryl group, wherein one of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, one of Y and Z is Να15), and the other is a sulfur atom or An oxygen atom, R15 is a compound (1) having a carbon number of 1 to 30; and ring structure C is a benzo[1,2-b:4,5_b']diheterocyclic ring structure represented by formula (C3) A and ring structure B are the same, and are a naphthalene ring which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and one of W and X is N-(R15), and the other is a sulfur atom, a compound in which γ is the same as X, Z is the same as W, and R15 is an alkyl group having 1 to 30 carbon atoms; (1); -39- 201206943 ring Let c be a benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by formula (C3), ring structure A and ring structure B independently as a thiophene ring which may have a substituent, w and X One of them is N-(R15)' and the other is a sulfur atom, an oxygen atom or a selenium atom. One of Y and Z is N-(R15), the other is a sulfur atom, an oxygen atom or a selenium atom, and R15 is a carbon number of 1. Compound (1) of alkyl group up to 30; ring structure C is a benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by formula (C3), ring structure A and ring structure B independent In the thiophene ring which may have a substituent, one of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, one of Y and Z is N-(R15), and the other is a sulfur atom or an oxygen atom. , R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; and ring structure C is a benzo[l,2-b:4,5-b']diheterocyclic ring represented by formula (C3), ring structure A and ring structure B are the same, and are thiophene rings which may have a substituent, and one of them is N-(R15), the other is a sulfur atom or an oxygen atom, and one of Y and Z is N-(R15), The other is a sulfur atom or an oxygen atom, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; the ring structure C is represented by the formula (C3) Benzo[l,2-b: 4,5-b']bicyclohetero, ring structure A and ring structure B are the same, and is a thiophene ring which may have a substituent, and one of W&X is N-(R15) The other is a sulfur atom, one of Y and Z is N-(R15), the other is a sulfur atom, and R15 is a compound having a carbon number of 1 to 30 (1); the ring structure C is a formula (C3) The benzo[l,2-b:4,5-b']bicycloheterocycle represented by the ring structure A and the ring structure B are the same, and is a thiophene ring which may have a substituent, and one of the W&X is N-( R15), the other is a sulfur atom or an oxygen atom, Y is the same as X, Z is the same as W, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms (-40-201206943 1 ): Ring structure C is formula (C3) The benzo[l,2-b:4,5-b,]diheterocyclic ring structure A and the ring structure B are the same, and may have a halogen atom, an alkyl group, a (trialkyl)decyl group, A thiophene ring of an aryl or heteroaryl group, one of W and X is N-(R15)' and the other is a sulfur atom or an oxygen atom, one of γ and z is N-(R15), and the other is a sulfur atom or oxygen. a compound in which an atom, Ri5 is an alkyl group having 1 to 30 carbon atoms; and a ring structure C is a benzo[l,2-b:4,5-b represented by the formula (C3) The diheterocyclic ring structure A and ring structure B are the same, and are thiophene rings which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, and one of W and X is N- (R15), the other is a sulfur atom, one of γ and z is N-(R15), the other is a sulfur atom, and R15 is a compound of the alkyl group having 1 to 30 carbon atoms (1), and the ring structure C is a formula ( The benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by C3) is the same as the ring structure A and the ring structure B, and is a thiophene ring which may have a substituent, and one of W and X is N-(R15), the other is a sulfur atom, Y is the same as X, Z is the same as W, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; ring structure C is a benzene represented by formula (C3) And [l,2-b: 4,5-b'] diheterocyclic ring, ring structure A and ring structure B are the same, and may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a hetero a thiophene ring of an aryl group, wherein one of W and X is N-(R15), the other is a sulfur atom, Y is the same as X, Z is the same as W, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; The ring structure C is a benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by the formula (C3), and the ring structure A and the ring structure B are independently Benzo[b]thiophene with a substituent 201206943 ring, one of W and X is N-(R15), the other is a sulfur atom, an oxygen atom or a selenium atom, and one of Y and Z is N-(R15), another One of which is a sulfur atom, an oxygen atom or a selenium atom, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms; (1); ring structure C is a benzo[1,2_b: 4,5-b represented by formula (C3) ']Diheterocycle' ring structure A and ring structure B are independently a benzo[b]thiophene ring of the thiophene ring, and one of X is N-(R15), and the other is a sulfur atom or an oxygen atom, Y And one of Z is >|_(foot 15), the other is a sulfur atom or an oxygen atom, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms; the ring structure C is represented by the formula (C3) Benzo[1,2-b: 4,5-b,]diheterocyclic ring, ring structure A and ring structure B are the same, and may be a benzo[b]thiophene ring of W and a group of X N-(R15), the other one is a sulfur atom or an oxygen atom. One of Y and Z is N-(R15), the other is a sulfur atom or an oxygen atom, and R15 is a compound having an alkyl group of 1 to 30 carbon atoms. Ring structure C is a benzo[l,2-b: 4,5-b,]diheterocyclic ring structure A and ring structure B represented by formula (C3) Similarly, it is a benzo[b]thiophene ring which may have a substituent, one of W and X is N-(R15), the other is a sulfur atom, one of Y and Z is N-(R15), and the other is a sulfur atom, a compound (1) wherein Ri5 is an alkyl group having 1 to 30 carbon atoms; and a ring structure C is a benzo[i,2-b:4,5-b'] diheterocyclic ring represented by the formula (C3). The ring structure A and the ring structure B are the same, and are a benzo[b]thiophene ring which may have a substituent. One of W and X is N-(R15), the other is a sulfur atom or an oxygen atom, and Y is the same as X. 2 is the same as W, and Ris is a compound (1) having an alkyl group having 1 to 3 carbon atoms; and ring structure C is benzo[i,2-b: 4,5-b'] represented by formula (C3) Heterocycle-42-201206943, ring structure A and ring structure B are the same 'and are benzo[b]thiophene rings which may have a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group, And one of X is N-(R15), the other is a sulfur atom or an oxygen atom, Y and the redundant medium are N-(R15), the other is a sulfur atom or an oxygen atom, and R15 is a carbon number of 1 to 30. Alkyl compound (1 ); ring structure C is a benzo[l,2-b: 4,5-b'] diheterocyclic ring represented by formula (C3), ring structure A and ring structure B phase And a benzo[b]thiophene ring which may have a halogen atom, an alkyl group, a (trialkyl)decylalkyl group, an aryl group or a heteroaryl group, one of W and X is NjR15), and the other is a sulfur atom, One of Y and Z is Ν-β15)', the other is a sulfur atom, and R15 is a compound having an alkyl group having 1 to 30 carbon atoms; (1); ring structure C is a benzo[1,2 represented by formula (C3). -b: 4,5-b']bicyclohetero, ring structure A and ring structure B are the same, and may be a benzene group having a halogen atom, an alkyl group, a (trialkyl)decyl group, an aryl group or a heteroaryl group. [b] The thiophene ring, wherein one of W and X is N-(R15), the other is a sulfur atom, γ is the same as X, z is the same as w, and R15 is a compound (1) having an alkyl group having 1 to 30 carbon atoms. The compound (1) is a compound represented by the following formula (1-1) to formula (1-4 5), formula (2-1) to formula (2_65), and formula (3-1) to formula (3-90). . -43- 201206943

(1-1) (1-2) (1-3) (1-4) (1-5)(1-1) (1-2) (1-3) (1-4) (1-5)

-44- 201206943-44- 201206943

-45- 201206943-45- 201206943

(1-26) (1-27) (1-28) (1-29) (1-30)(1-26) (1-27) (1-28) (1-29) (1-30)

-46- 201206943-46- 201206943

(1-41) (1-42) (1-43) (1-44) (1-45)(1-41) (1-42) (1-43) (1-44) (1-45)

(2-1) (2-2) (2-3) (2-4) (2-5)(2-1) (2-2) (2-3) (2-4) (2-5)

(2-8) >30π61 (2-6) (2-, 、S Q Q iPr - Ns^s sQ sQ (2-11) (2-12)(2-8) >30π61 (2-6) (2-, , S Q Q iPr - Ns^s sQ sQ (2-11) (2-12)

(2-13)(2-13)

c2h5《 CzHs c6h13( > CeH-c4h9^\,n 、s C8H17々N i C4HC2h5" CzHs c6h13( > CeH-c4h9^\,n,s C8H17々N i C4H

47 20120694347 201206943

F FF F

(2-21) (2-22)(2-21) (2-22)

Cl ClCl Cl

(2-25)(2-25)

-48- 201206943-48- 201206943

-49 201206943-49 201206943

(2-41) (2.42)(CH3)3 ^ ㈣) “(2-41) (2.42)(CH3)3 ^ (4)) "

(2-46) (2-47) (2-48) -50- 201206943(2-46) (2-47) (2-48) -50- 201206943

-51 - 201206943-51 - 201206943

-52 201206943-52 201206943

(3-6) p-7) (3-8) (3-9) (3-10)(3-6) p-7) (3-8) (3-9) (3-10)

P-11) P-12) (3-13) P-14) (3-15)P-11) P-12) (3-13) P-14) (3-15)

(3-16) G3-17) (3-18) 0-19) (3-20) -53- 201206943(3-16) G3-17) (3-18) 0-19) (3-20) -53- 201206943

(3-26) (3-27) (3-28) (3-29) (3-30)(3-26) (3-27) (3-28) (3-29) (3-30)

(3-31) (3-32) (3-33) (3-34) (3-35) -54- 201206943(3-31) (3-32) (3-33) (3-34) (3-35) -54- 201206943

(3-41) (3-42) (3-43) 0-44) (3-45) -55- 201206943(3-41) (3-42) (3-43) 0-44) (3-45) -55- 201206943

(3-52) -56- 201206943(3-52) -56- 201206943

P-61> (3-62) (3-63) (3-64) (3-65) -57- 201206943P-61> (3-62) (3-63) (3-64) (3-65) -57- 201206943

(3-71) (3-72) (3-73) (3-74) (3-75) -58- 201206943(3-71) (3-72) (3-73) (3-74) (3-75) -58- 201206943

(3-76) P-77) (3-78) (3-79) (3-80)(3-76) P-77) (3-78) (3-79) (3-80)

-59- 201206943-59- 201206943

(3-86) (3-87) (3-88) (3-89)(3-86) (3-87) (3-88) (3-89)

ClCl

(3-90) 其中較佳爲式(1-1) 、 (1-2) 、 (1-3) 、 (1-4) 、(1-5) 、 (1-6) 、 (1-7) 、 ( 1-14) 、 ( 1-16)、( 1-17) 、 ( 1-18) 、 ( 1-19) 、 (1-20) 、 (1-21)、( 1-22 ) 、 ( 1-23 ) 、 ( 1-26) 、 ( 1-29) 、 ( 1-31)、( 1-32) 、 ( 1-33) 、 ( 1-34) 、 ( 1-35) 、 ( 1-36)、( 1- 37 ) 、 ( 1-41 ) 、 (1-44) 、 (1-45) 、 (2-1) 、 (2- 2) ' (2-3) 、 (2-4) 、 (2-5) 、 (2-6) 、 (2-7)、 (2-8) 、 (2-9) 、 (2-10) 、 (2-11) 、 ( 2-12)、( 2- 13) 、 ( 2-14) 、 ( 2-15) 、 ( 2-17) 、 ( 2-19)、( 2-20 ) 、 ( 2-2 1) 、 (2-22) 、 (2-24) 、 (2-26)、( 2-27 ) 、 (2-28) 、 (2-29) 、 (2-30) 、 ( 2-3 1)、( 2-33 ) 、 (2-35) 、 (2-36) 、 (2-38) 、 (2-40)、( 2-42 ) 、 (2-43) 、 (2-45) 、 (2-46) 、 ( 2-47 )、( -60- 201206943 2-48 ) 、 ( 2-51)、( 2-52 )、(: 2-53 )、 (3-1 )、( 3- 2 )、 (3 .3 丨)、(3-4 ) 丨、(3-5 ) 、(3-6 ) 、(3-7 ) 、 (3-8 )' (3-11) ^ ( 3-12 )、( 3-16)、 (3-17 )、 ( 3-18) 、 ( 3-19)、( 3-20)、( 3-21 )、 (3-22 )、 ( 3-23 ) 、 ( 3 -26 )、( 3-27)、( 3-28 )、 (3-29 )、 ( 3-30 ) 、 ( 3-31)、( 3-32)、( 3-33)、 (3-34 )、 ( 3-35 ) ( 3-36)、( 3-37 ) ' ( 3-38)、 (3-41 )、 ( 3-42 ) ( 3-46)、( 3-47)、( 3-48 )、 (3-49 )、 ( 3-50 ) 、 ( 3-51)、( 3-52)、( 3-53 ) ' (3-54 )、 ( 3-55 ) 、 ( 3-57)、( 3-61 )、( 3-62 )、 (3-63 )、 ( 3-64 ) 、 ( 3-65)、( 3-66 )、( 3-67 )、 (3-68 )、 ( 3-69 ) 、 ( 3-70)、( 3-71 )、( 3-72 )、 (3-76 )、 ( 3-77 ) 、 ( 3-78)、( 3-79 )、( 3-81)、 (3-82 )、 ( 3-83 ) 、 ( 3-84)、( 3-85 )、( 3-86 )、 (3-87 )及 ( 3-88 ) 所表示之化合物 > 更佳爲式 ( 1-1 ) 、( 1 -2) 、( 1-3 ) 、 ( 1 - 4 ) 、 ( 1-6 ) ' (1 -14 ) 、(1-16) 、(1-17 ) 、(1-18 )' (1-19 ) ' (1 -2 1 ) 、(1-31 ) 、(1-32 ) 、(1 -33 ) 、 ( 1-34 ) 、(1 -36 ) 、(1 -44 ) 、(2-1 )、 (2-2 )- ‘ (2-3 )、 ( 2-4 ) ' ( :2 丨-5 ) 、 ( 2- 6 ) 、 ( 2-7 ) 、 ( 2- 8 ) 、 ( 2-9 ) 、(2 -10 ) 、(2-14 ) 、(2-19 ) 、(2-20 ) 、 ( 2-21 ) 、(2 -28 ) ' (2-29 ) 、(2-47 ) 、(3-1 ) 、(3-2 ) 、 (3-3 )' (3-4)、( 3-5) 、 (3 -6 )、( 3-7 ) 、 (3-8 ) '丨 〔3- 11) 、 ( 3-16 )、(3-17 )、(3- 18) 、 (3- 19 -61 - 201206943 ) X ( 3. •20 ) 、 (3-21 ) ' ( 3-22 ) 1 、 (3-23 ) ( 3 -26 ) > ( 3- •28 ) 、 (3-29 ) ' ( 3-30 ) 、 (3-31 ) > ( 3. -32 ) ( 3- •33 ) (3-34 ) ' ( 3-35 ) 、 (3-36 ) > ( 3. -37 ) ( 3- •38 ) 、 (3-41 ) ' ( 3-5 1 ) 、 (3-52 ) ( 3· -53 ) 、 ( 3- •54 ) (3-55 ) ' ( 3-61 ) > (3-62 ) % ( 3. -63 ) 、 ( 3. .64 ) (3-65 ) ' ( 3-66 ) 、 (3-67 ) 、 ( 3-68 ) 、 ( 3- 69 ) 、 (3-70 ) ' ( 3-71 ) 、 (3-72 ) 、 ( 3- •8 1 ) 、 ( 3- 83 ) 、 (3-84 ) 及(3 -85 ) 所表示之化合物。 化 合 物( 1 )如後述 可以真空步 .驟 形成薄膜 〇 又 , 因 化 合 物 ( 1 )相對於有機 溶劑具有優 良 溶解性, 故 mr 既 使 以 塗 佈 於 基 板等 之 方法也可 形成 薄膜。 、/-刖 述有機溶 劑 如 > 水 t 甲 醇 、 乙醇 異丙基醇 、丁 醇等之醇 溶劑;苯 、 甲 苯 、 二 甲 苯 % 氯苯 〇-二氛苯 、三: 氣苯、 氟 苯等之芳 香 族 烴 溶 劑 t 二 氣 甲烷 氯仿、1,2-二氯乙院 1,1’,2,2,- 四 氯 乙 烷 四 氯 乙 烯、 四 氯化碳等 之鹵· 化脂肪族 烴溶劑; 二 乙 基 醚 、 二 噁 烷 、四 氫 呋喃、茴 香醚1 等之醚溶 劑;戊烷 > 己 院 > 庚 烷 、 辛 烷、 環 己烷等之 脂肪; 族烴溶劑 ;丙酮、 甲 基 乙 基 酮 、 甲 基 異丁 基 酮、環己 酮等: 之酮溶劑 ;乙酸乙 酯 乙 酸 丁 酯 等 之 酯溶 劑 :乙腈、 丙腈 、甲氧基 乙腈、戊 二 腈 、 苯 腈 等 之 腈 溶劑 * 及二甲基 亞砸 、環丁颯 、N,N-二 甲 基 甲 醯 胺 N, N- 二甲 基 乙醯胺、 N-甲 基-2- 吡丨 塔烷酮等 之 非: 質 子 性 極 性 溶 劑, 較 佳爲芳香 族烴; 溶劑、 鹵 化脂肪族 烴 溶 劑 及 醚 溶 劑 > 更佳 爲 甲苯、二 甲苯 、〇 -二 :氯 苯、二氯 甲 院 、 氯 仿 及 四 氫 呋喃 〇 可組合使 用2種 以上: 之有機溶劑》 -62- 201206943 將化合物(1 )溶解於有機溶劑而得之溶液中,化合 物(1)之濃度一般爲0_〇〇1至50重量%,較佳爲0.01至10 重量%,更佳爲0.1至5重量%。 上述溶液於不會明顯損害後述薄膜(有機半導體活性 層)之載體移動度之範圍內,可含有防氧化劑、安定劑等 之添加劑。 上述溶液例如可藉由,一般於1〇至2〇〇。(:,較佳於20 至1 5〇°C下將化合物(1 )溶解於有機溶劑中調製而得。 下面將說明化合物(1)之製造方法。 環構造C爲式(C1)所表示之苯環,X及γ爲N-(R5)之 化合物(1 )例如可藉由,式(2 ):(3-90) Among them, preferred are formulas (1-1), (1-2), (1-3), (1-4), (1-5), (1-6), (1-7) ), (1-14), (1-16), (1-17), (1-18), (1-19), (1-20), (1-21), (1-22), (1-23), (1-26), (1-29), (1-31), (1-32), (1-33), (1-34), (1-35), (1 -36), ( 1- 37 ), ( 1-41 ), (1-44) , (1-45) , (2-1) , (2- 2) ' (2-3) , (2-4 ), (2-5), (2-6), (2-7), (2-8), (2-9), (2-10), (2-11), (2-12), ( 2- 13) , ( 2-14) , ( 2-15) , ( 2-17) , ( 2-19 ) , ( 2-20 ) , ( 2-2 1) , ( 2-22 ) , ( 2-24), (2-26), (2-27), (2-28), (2-29), (2-30), (2-3 1), (2-33), (2 -35), (2-36), (2-38), (2-40), (2-42), (2-43), (2-45), (2-46), (2-47 ), ( -60- 201206943 2-48 ), ( 2-51), ( 2-52 ), (: 2-53 ), (3-1 ), ( 3- 2 ), (3 .3 丨), (3-4) 丨, (3-5), (3-6), (3-7), (3-8)' (3-11) ^ (3-12), ( 3-16), (3-17), (3-18), (3-19), (3-20), (3-21), (3-22), (3-23), (3 - 26), (3-27), (3-28), (3-29), (3-30), (3-31), (3-32), (3-33), (3-34) , ( 3-35 ) ( 3-36), ( 3-37 ) ' ( 3-38), (3-41 ), ( 3-42 ) ( 3-46), ( 3-47), ( 3- 48 ), (3-49 ), ( 3-50 ), ( 3-51), ( 3-52), ( 3-53 ) ' (3-54 ), ( 3-55 ), ( 3-57) , ( 3-61 ), ( 3-62 ), (3-63 ), ( 3-64 ), ( 3-65), ( 3-66 ), ( 3-67 ), (3-68 ), ( 3-69 ) , ( 3-70), ( 3-71 ), ( 3-72 ), (3-76 ), ( 3-77 ) , ( 3-78), ( 3-79 ), ( 3- Compounds represented by 81), (3-82), (3-83), (3-84), (3-85), (3-86), (3-87), and (3-88)> More preferably (1-1), (1-2), (1-3), (1-4), (1-6) '(1 -14), (1-16), (1-17 ), (1-18 ) ' (1-19 ) ' (1 -2 1 ) , (1-31 ) , (1-32 ) , (1 -33 ) , ( 1-34 ) , (1 -36 ) , (1 -44 ) , (2-1 ), (2-2 )- ' (2-3 ), ( 2-4 ) ' ( :2 丨-5 ) , ( 2 6 ) , ( 2-7 ), ( 2 - 8 ) , ( 2-9 ) , ( 2 -10 ) , ( 2-14 ) , ( 2-19 ) , ( 2-20 ) , ( 2-21 ) , ( 2 -28 ) ' (2-29), (2-47), (3-1), (3-2), (3-3)' (3-4), (3-5), (3 -6), (3 -7 ) , (3-8 ) '丨[3- 11) , ( 3-16 ), (3-17 ), (3- 18) , (3- 19 -61 - 201206943 ) X ( 3. •20 ), (3-21 ) ' ( 3-22 ) 1 , (3-23 ) ( 3 -26 ) > ( 3- •28 ) , (3-29 ) ' ( 3-30 ) , (3-31 ) > ( 3. -32 ) ( 3- •33 ) (3-34 ) ' ( 3-35 ) , (3-36 ) > ( 3. -37 ) ( 3- •38 ) , (3- 41 ) ' ( 3-5 1 ) , (3-52 ) ( 3· -53 ) , ( 3- •54 ) (3-55 ) ' ( 3-61 ) > (3-62 ) % ( 3. -63 ) , ( 3. .64 ) (3-65 ) ' ( 3-66 ) , (3-67 ) , ( 3-68 ) , ( 3- 69 ) , (3-70 ) ' ( 3-71 ), a compound represented by (3-72), (3- •8 1 ), (3-83), (3-84), and (3-85). The compound (1) can be formed into a vacuum step as described later, and since the compound (1) has excellent solubility with respect to an organic solvent, mr can be formed into a film even by coating on a substrate or the like. , /- narration of organic solvents such as > water t methanol, ethanol isopropyl alcohol, butanol and other alcohol solvents; benzene, toluene, xylene% chlorophenyl hydrazine - di- benzene, three: gas benzene, fluorobenzene, etc. Aromatic hydrocarbon solvent t di-methane methane chloroform, 1,2-dichloroethane 1,1', 2,2,- tetrachloroethane tetrachloroethylene, carbon tetrachloride, etc. Ether solvent of diethyl ether, dioxane, tetrahydrofuran, anisole 1, etc.; pentane>hexain> fat of heptane, octane, cyclohexane, etc.; hydrocarbon solvent; acetone, methyl ethyl Ketone, methyl isobutyl ketone, cyclohexanone, etc.: ketone solvent; ethyl acetate butyl acetate ester solvent: acetonitrile, propionitrile, methoxy acetonitrile, glutaronitrile, benzonitrile, etc. * and dimethyl hydrazine, cyclobutyl hydrazine, N, N-dimethylformamide N, N-dimethylacetamide, N-methyl-2-pyridinone, etc. a polar solvent, preferably an aromatic hydrocarbon; a solvent, a halogenated aliphatic hydrocarbon Solvent and ether solvent> More preferably, toluene, xylene, hydrazine-di: chlorobenzene, dichlorocarbyl, chloroform or tetrahydrofuran can be used in combination of two or more kinds: organic solvent. -62-201206943 Compound (1) The concentration of the compound (1) is usually from 0 to 〇〇1 to 50% by weight, preferably from 0.01 to 10% by weight, more preferably from 0.1 to 5% by weight, based on the solution obtained by dissolving in an organic solvent. The above solution may contain an additive such as an antioxidant or a stabilizer in a range that does not significantly impair the carrier mobility of the film (organic semiconductor active layer) to be described later. The above solution can be, for example, generally from 1 Torr to 2 Torr. (: It is preferably prepared by dissolving the compound (1) in an organic solvent at 20 to 15 ° C. The method for producing the compound (1) will be described below. The ring structure C is represented by the formula (C1). The compound (1) wherein the benzene ring, X and γ are N-(R5) can be, for example, by the formula (2):

(式中’環構造A、環構造B' w及Z各自同上述定義,環 構造C爲式(C1)所表示之苯環,R2及R3各自獨立爲鹵原 子)所表示之化合物(以下略記爲化合物(2)),與式 (4): R1 5 -NH2 (4) (r15同上述定義) 所表示之胺化合物(以下略記爲胺化合物(4))反應而 得。 R2及R3所表示之鹵原子如溴及碘。 -63- 201206943 化合物(2 )如下述化合物。(In the formula, the ring structure A, the ring structure B' w and Z are each the same as defined above, and the ring structure C is a compound represented by the formula (C1), and R2 and R3 are each independently a halogen atom) The compound (2)) is obtained by reacting an amine compound (hereinafter abbreviated as the amine compound (4)) represented by the formula (4): R1 5 -NH 2 (4) (r15 is as defined above). The halogen atoms represented by R2 and R3 are bromine and iodine. -63- 201206943 The compound (2) is as the following compound.

SiMe3SiMe3

SiMe3SiMe3

-64 201206943-64 201206943

化合物(2 )與胺化合物(4 )之反應較佳於有機溶劑 中進行。有機溶劑可爲,相對於上述反應爲不活性之有機 溶劑、甲苯、二甲苯等之芳香族烴溶劑、氯苯、〇-二氯苯 等之鹵化芳香族烴溶劑、己烷、庚烷等之脂肪族烴溶劑、 氯仿、1,2-二氯乙烷等之鹵化脂肪族烴溶劑、甲醇、異丙 醇、t-丁醇等之碳數1至4之醇溶劑、及四氫呋喃、二噁烷 、二甲氧基乙烷等之醚溶劑,較佳爲芳香族烴溶劑及脂肪 族烴溶劑’更佳爲芳香族烴溶劑,特佳爲甲苯及二甲苯。 可組合使用2種以上之有機溶劑。 胺化合物(4)之使用量相對於化合物(2) 1莫耳一 般爲1至50莫耳,較佳爲2至2〇莫耳,更佳爲2至15莫耳。 將化合物(2 )溶解於有機溶劑時,所使用之溶劑量 爲,相對於溶劑每丨升使所得溶液中之化合物(2) 一般爲 0.0001至20莫耳,較佳爲〇 〇〇1至1〇莫耳更佳爲〇 〇1至5 莫耳之量。 化合物(2)與胺化合物(4)之反應較佳於存在鈀觸 媒及鹼下進行。 -65- 201206943 鈀觸媒之使用量相對於化合物(2) 1莫耳,於鈀原子 換算下一般爲0.0001至0.3莫耳,較佳爲0.0001至0.2莫耳 〇 鈀觸媒一般可藉由’於有機溶劑中使配位基接觸鈀化 合物而得。可使用反應之前於有機溶劑中使配位基接觸鈀 化合物而得之鈀觸媒進行反應。又,可於反應系內使配位 基接觸鈀化合物,而於反應系中調製鈀觸媒。 配位基可爲,能配位於鈀,且可溶於有機溶劑之單座 配位基、多座配位基及聚炔配位基,較佳爲單座配位基, 更佳爲單座膦配位基。 單座膦配位基如,三(η-丁基)膦、三(t-丁基)膦 、三環己基膦、三苯基膦、三(〇-甲苯基)膦、三萘基膦 、二苯基萘膦及二環己基萘鱗,較佳爲三(t-丁基)膦。 雙座配位基如,2,2’-雙(二苯基膦基)-1,1’-聯萘、 1,2-雙(二苯基膦基)乙烷、1,3-雙(二苯基膦基)丙烷 、1,4-雙(二苯基膦基)丁烷、1,1’-(二苯基膦基)二茂 鐵、4,5-雙(二苯基膦基)-9,9-二甲基咕噸、2,2’-雙(二 苯基膦基)二苯基醚、5,5’·雙(二苯基膦基)-4,4’-二( 1,3-苯并二噁唑)等具有2個磷原子之雙座膦配位基’及2-(N,N-二甲基胺基)-2’-(二環己基胺基)聯苯等具有1 個氮原子與1個磷原子之雙座胺基膦配位基。 可使用市售之配位基,又可使用已知方法所製造之配 位基。 配位基之使用量相對於鈀化合物所含有之細原子1莫 -66- 201206943 耳一般爲0.5至2 0莫耳》 紀化合物如’乙酸鈀、氯化鈀、二氯雙(乙腈)鈀、 鈀乙醯乙酸鹽、二氯(環辛_丨,5 -二烯)鈀、二溴雙(苯腈 )銷、二-Μ-氯雙(κ-烯丙基)二鈀、二氯雙(吡啶) 鈀、二氯雙(三苯基膦)鈀、二氯雙(二苯基膦基 )二茂鐵]鈀-二氯甲烷錯合物等2價之鈀化合物,及三( 二亞苄基丙酮)二鈀、三(二亞苄基丙酮)二鈀-氯仿錯 合物、四(三苯基膦)鈀等〇價之鈀化合物,較佳爲三( 二亞苄基丙酮)二鈀及三(二亞苄基丙酮)二鈀-氯仿錯 合物。可使用市售之鈀化合物,又可使用已知方法所製造 之鈀化合物。 鹼如,氫氧化鈣等之鹼土類金屬氫氧化物;碳酸鉀、 碳酸鈉、碳酸铯等之鹼金屬碳酸鹽;碳酸鎂、碳酸鈣、碳 酸鋇等之鹼土類金屬碳酸鹽;磷酸鋰、磷酸鉀、磷酸鈉等 之鹼金屬磷酸鹽;及甲氧化鈉、乙氧化鈉、t- 丁氧化鈉、 甲氧化鉀、乙氧化鉀、t-丁氧化鉀、t-丁氧化鋰等之鹼金 屬烷氧化物’較佳爲鹼金屬碳酸鹽及鹼金屬烷氧化物,更 佳爲鹼金屬烷氧化物’特隹爲碳數1至6之鹼金屬烷氧化物 。可組合使用2種以上之鹼。 鹼之使用量相對於化合物(2) 1莫耳一般爲0.1至25 莫耳’較佳爲1至20莫耳,更佳爲2至1〇莫耳。鹼之使用量 相對於化合物(2) 1莫耳爲0.1莫耳以上時,傾向減少未 反應之胺化合物(4)之量而爲佳。 反應溫度一般爲〇 °c至反應混合物之回流溫度,較佳 -67- 201206943 爲40至200°C。反應時間一般爲1分鐘至120小時。 進行一定時間反應後,例如可藉由將水或稀鹽酸加入 反應混合物,使反應急冷。反應急冷後藉由萃取、洗淨等 —般之後處理步驟可取出化合物(1)。取出之化合物(1 )可藉由再結晶、昇華 '各種色譜法等一般之精製步驟再 精製。 化合物(2)例如可藉由特開2008-08 1494號公報等所 記載之方法製造。 環構造C爲式(C1)所表示之苯環、W及Z獨立爲N-(R5)之化合物(1 )例如可藉由,式(3 )The reaction of the compound (2) with the amine compound (4) is preferably carried out in an organic solvent. The organic solvent may be an organic solvent inactive with respect to the above reaction, an aromatic hydrocarbon solvent such as toluene or xylene, a halogenated aromatic hydrocarbon solvent such as chlorobenzene or hydrazine-dichlorobenzene, or hexane or heptane. An aliphatic hydrocarbon solvent, a halogenated aliphatic hydrocarbon solvent such as chloroform or 1,2-dichloroethane, an alcohol solvent having 1 to 4 carbon atoms such as methanol, isopropanol or t-butanol, and tetrahydrofuran or dioxane. The ether solvent such as dimethoxyethane is preferably an aromatic hydrocarbon solvent or an aliphatic hydrocarbon solvent. More preferably, it is an aromatic hydrocarbon solvent, and particularly preferably toluene and xylene. Two or more organic solvents may be used in combination. The amine compound (4) is used in an amount of usually 1 to 50 moles, preferably 2 to 2 moles, more preferably 2 to 15 moles, per mole of the compound (2). When the compound (2) is dissolved in an organic solvent, the amount of the solvent to be used is such that the compound (2) in the resulting solution is generally 0.0001 to 20 mol, preferably 〇〇〇1 to 1 per liter of the solvent. It is better to use 〇1 to 5 moles. The reaction of the compound (2) with the amine compound (4) is preferably carried out in the presence of a palladium catalyst and a base. -65- 201206943 The amount of palladium catalyst used is generally 0.0001 to 0.3 mol, preferably 0.0001 to 0.2 mole of palladium catalyst in terms of palladium atom, relative to compound (2) 1 mol. The ligand is brought into contact with the palladium compound in an organic solvent. The palladium catalyst obtained by contacting the ligand with the palladium compound in an organic solvent before the reaction can be used for the reaction. Further, the ligand may be contacted with the palladium compound in the reaction system to prepare a palladium catalyst in the reaction system. The ligand may be a single-site ligand, a plurality of ligands and a polyacetylene ligand which are soluble in palladium and are soluble in an organic solvent, preferably a single-site ligand, more preferably a single-seat. Phosphine ligand. Single-site phosphine ligands such as tris(η-butyl)phosphine, tri(t-butyl)phosphine, tricyclohexylphosphine, triphenylphosphine, tris(p-tolyl)phosphine, trinaphthylphosphine, Diphenylnaphthalenephosphine and dicyclohexylnaphthalene scale are preferably tris(t-butyl)phosphine. Two-seat ligands such as 2,2'-bis(diphenylphosphino)-1,1'-binaphthyl, 1,2-bis(diphenylphosphino)ethane, 1,3-double ( Diphenylphosphino)propane, 1,4-bis(diphenylphosphino)butane, 1,1'-(diphenylphosphino)ferrocene, 4,5-bis(diphenylphosphino) )-9,9-dimethylxanthene, 2,2'-bis(diphenylphosphino)diphenyl ether, 5,5'·bis(diphenylphosphino)-4,4'-di a two-seat phosphine ligand having two phosphorus atoms, such as 1,3-benzoxoxazole, and 2-(N,N-dimethylamino)-2'-(dicyclohexylamino) A biphenylaminophosphine ligand having one nitrogen atom and one phosphorus atom such as biphenyl. A commercially available ligand may be used, and a ligand produced by a known method may be used. The amount of the ligand used is generally 0.5 to 20 moles of the fine atom of the palladium compound 1 to -66 to 201206943, such as 'palladium acetate, palladium chloride, dichlorobis(acetonitrile) palladium, Palladium acetamacetate, dichloro(cycloxin-丨,5-diene) palladium, dibromobis(benzonitrile) pin, di-anthracene-chlorobis(κ-allyl)dipalladium, dichlorobis( Pyridine) a divalent palladium compound such as palladium, dichlorobis(triphenylphosphine)palladium, dichlorobis(diphenylphosphino)ferrocene]palladium-dichloromethane complex, and tris(dibenzylidene) A valence palladium compound such as diacetone, tris(dibenzylideneacetone)dipalladium-chloroform complex or tetrakis(triphenylphosphine)palladium, preferably tris(dibenzylideneacetone)dipalladium And tris(dibenzylideneacetone) dipalladium-chloroform complex. A commercially available palladium compound or a palladium compound produced by a known method can be used. An alkali metal hydroxide such as an alkali metal such as calcium hydroxide; an alkali metal carbonate such as potassium carbonate, sodium carbonate or cesium carbonate; an alkaline earth metal carbonate such as magnesium carbonate, calcium carbonate or cesium carbonate; lithium phosphate and phosphoric acid An alkali metal phosphate such as potassium or sodium phosphate; and an alkali metal alkane such as sodium methoxide, sodium ethoxide, sodium t-butoxide, potassium methoxide, potassium ethoxide, potassium t-butoxide or lithium t-butoxide The oxide 'preferably an alkali metal carbonate and an alkali metal alkoxide, more preferably an alkali metal alkoxide' is an alkali metal alkoxide having a carbon number of 1 to 6. Two or more bases may be used in combination. The base is used in an amount of usually 0.1 to 25 moles, preferably 1 to 20 moles, more preferably 2 to 1 mole, per mole of the compound (2). When the amount of the base is 0.1 mol or more based on the compound (2), it is preferred to reduce the amount of the unreacted amine compound (4). The reaction temperature is usually from 〇 °c to the reflux temperature of the reaction mixture, preferably from -67 to 201206943 of from 40 to 200 °C. The reaction time is usually from 1 minute to 120 hours. After the reaction for a certain period of time, the reaction can be quenched, for example, by adding water or dilute hydrochloric acid to the reaction mixture. After the reaction is quenched, the compound (1) can be taken out by a post-treatment step such as extraction, washing, or the like. The compound (1) taken out can be purified by a general purification step such as recrystallization or sublimation 'various chromatography. The compound (2) can be produced, for example, by the method described in JP-A-2008-08 1494. The ring structure C is a benzene ring represented by the formula (C1), and the compound (1) wherein W and Z are independently N-(R5) can be, for example, by the formula (3)

(式中’環構造A'環構造B、X及Y同上述定義,環構造 C爲式(C1)所表示之苯環,R4及R5獨立爲鹵原子) 所表不之化合物(以下略記爲化合物(3 ))與胺化合物 (4 )反應而得。 R4及R5所表示之鹵原子如,溴及碘。 化合物(3 )如下述化合物。 -68- 201206943(In the formula, the ring structure A' ring structure B, X and Y are the same as defined above, and the ring structure C is a benzene ring represented by the formula (C1), and R4 and R5 are independently a halogen atom) (hereinafter abbreviated as Compound (3)) is obtained by reacting with amine compound (4). The halogen atoms represented by R4 and R5 are, for example, bromine and iodine. The compound (3) is as the following compound. -68- 201206943

化合物(3 )與胺化合物(4 )之反應較佳於有機溶劑 中進行。有機溶劑可爲,相對於上述反應爲不活性之有機 溶劑,甲苯、二甲苯等之芳香族烴溶劑、氯苯、〇_二氯苯 等之鹵化芳香族烴溶劑、己烷、庚烷、二甲氧基乙烷等之 脂肪族烴溶劑、氯仿、1,2-二氯乙烷等之鹵化脂肪族烴溶 劑、甲醇、異丙醇、t-丁醇等之碳數1至4之醇溶劑,及四 氫呋喃、二噁烷等之醚溶劑,較佳爲芳香族烴溶劑及脂肪 族烴溶劑,更佳爲芳香族烴溶劑,特佳爲甲苯及二甲苯。 可組合使用2種以上之有機溶劑。 式(4)所表示之胺化合物之使用量相對於化合物(3 )1莫耳一般爲1至50莫耳’較佳爲2至20莫耳,更佳爲2至 15莫耳。 將化合物(3 )溶解於有機溶劑時,所使用之溶劑量 —般爲’相對於溶劑每1升使所得溶液中之化合物(3)爲 0.0001至20莫耳’較佳爲〇〇〇1至1〇莫耳,更佳爲〇〇1至5 莫耳。 化合物(3 )與胺化合物(4)之反應較佳於存在鈀觸 媒及驗下進行。 -69- 201206943 祀觸媒之使用量相對於化合物(3) 1莫耳,於絕原子 換算下一般爲0·0001至0.3莫耳,較佳爲0.0001至0.2莫耳 〇 鈀觸媒一般可藉由,有機溶劑中使配位基接觸鈀化合 物而得。可使用反應之前於有機溶劑中使配位基接觸鈀化 合物而得之鈀觸媒。又可於反應系內使配位基接觸鈀化合 物,而於反應系中調製鈀觸媒。 配位基如,與前述化合物(2 )與胺化合物(4 )反應 所使用之配位基相同之物。鈀化合物也如,與前述化合物 (2)與胺化合物(4)反應所使用之鈀化合物相同之物。 鹼也如’與前述化合物(2)與胺化合物(4)反應所使用 之鹼相同之物。 鹼之使用量相對於化合物(3) 1莫耳一般爲〇.1至25 莫耳’較佳爲1至20莫耳’更佳爲2至10莫耳》鹼之使用量 相對於化合物(3) 1莫耳爲0.1莫耳以上時,傾向減少未 反應之胺化合物之量而爲佳。 化合物(3)與胺化合物(4)之反應溫度一般爲〇。〇 至反應混合物之回流溫度,較佳爲40至20(TC。反應時間 —般爲1分鐘至120小時。 進行一定反應時間後,例如可藉由將水或稀鹽酸加入 反應混合物中,使反應急冷。反應急冷後藉由萃取、洗淨 等一般後處理步驟,可取出化合物(1)。取出之化合物 (1 )可藉由再結晶、昇華、各種色譜法等一般之精製步 驟再精製。 -70- 201206943 化合物(3 )例如可藉由,式(5 ):The reaction of the compound (3) with the amine compound (4) is preferably carried out in an organic solvent. The organic solvent may be an organic solvent which is inactive with respect to the above reaction, an aromatic hydrocarbon solvent such as toluene or xylene, a halogenated aromatic hydrocarbon solvent such as chlorobenzene or hydrazine-dichlorobenzene, hexane, heptane or the like. An aliphatic hydrocarbon solvent such as methoxyethane, a halogenated aliphatic hydrocarbon solvent such as chloroform or 1,2-dichloroethane, or an alcohol solvent having 1 to 4 carbon atoms such as methanol, isopropanol or t-butanol. The ether solvent such as tetrahydrofuran or dioxane is preferably an aromatic hydrocarbon solvent or an aliphatic hydrocarbon solvent, more preferably an aromatic hydrocarbon solvent, and particularly preferably toluene and xylene. Two or more organic solvents may be used in combination. The amine compound represented by the formula (4) is used in an amount of usually 1 to 50 moles, preferably 2 to 20 moles, more preferably 2 to 15 moles, per mole of the compound (3). When the compound (3) is dissolved in an organic solvent, the amount of the solvent to be used is generally 'per 10 liters of the compound (3) in the resulting solution per liter of the solvent, preferably 〇〇〇1 to 1 〇 Mo Er, more preferably 〇〇 1 to 5 Mo. The reaction of the compound (3) with the amine compound (4) is preferably carried out in the presence of a palladium catalyst and the test. -69- 201206943 The amount of rhodium catalyst used is generally 0.0001 to 0.3 mol, preferably 0.0001 to 0.2 molA palladium catalyst, based on the compound (3) 1 mol. It is obtained by contacting a ligand with a palladium compound in an organic solvent. A palladium catalyst obtained by contacting a ligand with a palladium compound in an organic solvent before the reaction can be used. Further, the ligand may be contacted with the palladium compound in the reaction system to prepare a palladium catalyst in the reaction system. The ligand is, for example, the same as the ligand used for the reaction of the above compound (2) with the amine compound (4). The palladium compound is also the same as the palladium compound used for the reaction of the above compound (2) with the amine compound (4). The base is also the same as the base used for the reaction of the above compound (2) with the amine compound (4). The amount of the base used is generally from 0.1 to 25 moles, preferably from 1 to 20 moles, more preferably from 2 to 10 moles, relative to the compound (3). When 1 mol is 0.1 mol or more, it is preferred to reduce the amount of the unreacted amine compound. The reaction temperature of the compound (3) with the amine compound (4) is generally ruthenium. The reflux temperature of the reaction mixture is preferably 40 to 20 (TC. The reaction time is generally from 1 minute to 120 hours. After a certain reaction time, the reaction can be carried out, for example, by adding water or dilute hydrochloric acid to the reaction mixture. After quenching, the compound (1) can be taken out by a general post-treatment step such as extraction, washing, etc. The compound (1) taken out can be re-refined by a general refining step such as recrystallization, sublimation or various chromatography. 70-201206943 The compound (3) can be, for example, by the formula (5):

(式中’環構造A、環構造B、環構造C、X及γ同式(3) 定義,R0及R7獨立爲氫原子或鹵原子,但R6&R7中任何— 方爲氫原子) 所表示之化合物(以下略記爲化合物(5 ))與鹵化劑反 應而得。 R6及R7所表不之鹵原子如,溴原子及碘原子。 化合物(5 )如下述化合物。(In the formula, 'ring structure A, ring structure B, ring structure C, X and γ are the same as defined in formula (3), R0 and R7 are independently a hydrogen atom or a halogen atom, but any of R6&R7 is a hydrogen atom) The compound (hereinafter abbreviated as compound (5)) is reacted with a halogenating agent. The halogen atoms represented by R6 and R7 are, for example, a bromine atom and an iodine atom. The compound (5) is as the following compound.

化合物(5)例如可依、Synth. Met. 2002,130,139、 J. Org. Chem. 2003,68,9813、J. Am. Chem. Soc. 2007, 1 29, 1 23 86 ' Org. Lett. 2008, l〇5 43 23 ' J. Org. Chem. 2005, 7 0,1 02 92等所記載之方法製造。 化合物(5 )與鹵化劑之反應較佳於有機溶劑中進行 。有機溶劑如,與化合物(3 )與胺化合物(4 )反應所使 用之有機溶劑相同之物’較佳爲甲苯、氯仿、四氯化碳及 -71 - 201206943 N,N-二甲基甲醯胺。 鹵化劑如’ N -溴琥珀醯亞胺、2 -溴乙醯胺、溴、碘、 碘-高碘酸之組合、單氯化碘-高碘酸之組合、及苄基三甲 基銨二氯碘化物-氯化鋅(II )之組合,較佳爲N_溴琥珀 醯亞胺、'為及碘-高碘酸之組合。鹵化劑之使用量相對於 化合物(5) 1莫耳一般爲(^丨至50莫耳,較佳爲〇5至2〇莫 耳,更佳爲1至1 0莫耳。 將化合物(5)溶解於有機溶劑時,所使用之溶劑之 量一般爲’使相對於溶劑每1升之所得溶液中之化合物(5 )爲0.0001至20莫耳,較佳爲0.001至1〇莫耳,更佳爲0.01 至5莫耳》 不易進行反應時,可將過氧化苯醯或偶氮雙丁腈等之 添加劑加入觸媒量反應系內。 反應溫度一般爲-78 °C至反應混合物之回流溫度,較 佳爲-20°C至5 0°C。反應時間一般爲1分鐘至48小時。 . 進行一定時間反應後,例如可藉由將水或稀鹽酸加入 反應混合物中,使反應急冷。反應急冷後藉由萃取、洗淨 等一般之後處理步驟,可取出化合物(3)。取出之化合 物(3)可藉由再結晶、昇華、各種色譜法等一般之精製 步驟再精製。 化合物(3 )及化合物(5 )例如可依特開 2008-08 1 494號公報等所記載之方法製造。 環構造C爲式(C1)所表示之苯環、W及Z獨立爲Ν-β5) 所 表示之 化合物 (1) 例如也 可藉由 ’將式 (6) -72- 201206943Compound (5) is, for example, Synth. Met. 2002, 130, 139, J. Org. Chem. 2003, 68, 9813, J. Am. Chem. Soc. 2007, 1 29, 1 23 86 ' Org. Lett 2008, l〇5 43 23 'Manufactured by the method described in J. Org. Chem. 2005, 7 0, 1 02 92, etc. The reaction of the compound (5) with a halogenating agent is preferably carried out in an organic solvent. The organic solvent is, for example, the same as the organic solvent used for the reaction of the compound (3) with the amine compound (4), preferably toluene, chloroform, carbon tetrachloride, and -71 - 201206943 N,N-dimethylformamidine. amine. Halogenating agents such as 'N-bromosuccinimide, 2-bromoacetamide, bromine, iodine, combination of iodine-periodic acid, a combination of monoiodide-periodic acid, and benzyltrimethylammonium The combination of chloroiodide-zinc chloride (II) is preferably a combination of N-bromosuccinimide, 'as and iodine-periodic acid. The halogenating agent is used in an amount of from 1 to 50 mol per mol of the compound (5), preferably from 5 to 2 mol, more preferably from 1 to 10 mol. The compound (5) When dissolved in an organic solvent, the amount of the solvent to be used is generally 'in terms of the compound (5) per 1 liter of the solvent relative to the solvent, 0.0001 to 20 mol, preferably 0.001 to 1 mol, more preferably When the reaction is difficult to be 0.01 to 5 moles, an additive such as benzoquinone or azobisbutyronitrile may be added to the catalyst reaction system. The reaction temperature is usually -78 ° C to the reflux temperature of the reaction mixture. It is preferably from -20 ° C to 50 ° C. The reaction time is usually from 1 minute to 48 hours. After a certain period of reaction, for example, water or dilute hydrochloric acid can be added to the reaction mixture to quench the reaction. The compound (3) can be taken out by a general post-treatment step such as extraction, washing, etc. The compound (3) taken out can be further purified by a general purification step such as recrystallization, sublimation or various chromatography. The compound (5) can be, for example, JP-A-2008-08 1494 A method of manufacturing a carrier. Ring C is configured of formula (C1) represented by the benzene ring, W, and Z are independently Ν-β5) represented by the compound (1) may, for example, by 'the formula (6) -72-201206943

(式中,環構造A、環構造B、X及Y同上述定義,環構造 C爲式(C1)所表示之苯環) 所表示之化合物(以下略記爲化合物(6 ))環化後,使 所得之化合物與式(7 ): R1 5 -X1 (7) (R15同上述定義,X1爲鹵原子) 所表示之化合物(以下略記爲化合物(7 ))反應而得。 X1所表示之鹵原子如,溴原子及碘原子。 化合物(6)之環化反應例如可依據Org. Lett., 2010, 12,3164’於存在膦酸三乙酯等之膦酸酯類下,藉由加熱 化合物(6 )而實施。 化合物(6)之環化反應而得的化合物與化合物(7) 之反應’一般係以同胺基之烷基化反應之條件實施。 化合物(6 )如下述化合物。 -73- 201206943(In the formula, the ring structure A, the ring structure B, X and Y are the same as defined above, and the ring structure C is a benzene ring represented by the formula (C1)) (hereinafter, abbreviated as the compound (6)) is cyclized. The obtained compound is obtained by reacting a compound represented by the formula (7): R1 5 -X1 (7) (wherein R15 is as defined above, and X1 is a halogen atom) (hereinafter abbreviated as the compound (7)). The halogen atom represented by X1 is, for example, a bromine atom and an iodine atom. The cyclization reaction of the compound (6) can be carried out, for example, according to Org. Lett., 2010, 12, 3164' in the presence of a phosphonate such as triethyl phosphonate, by heating the compound (6). The reaction of the compound obtained by the cyclization reaction of the compound (6) with the compound (7) is generally carried out under the conditions of an alkylation reaction with an amine group. The compound (6) is as the following compound. -73- 201206943

化合物(6 )例如可藉由,式(X ) R50Compound (6) can be, for example, by formula (X) R50

(X) (式中,X及Y同上述定義,環構造C爲式(Cl)所表示之 苯環,R5Q及R51獨立爲鹵原子)(X) (wherein, X and Y are the same as defined above, and ring structure C is a benzene ring represented by formula (Cl), and R5Q and R51 are independently a halogen atom)

所表示之化合物(以下略記爲化合物(X )),與式(Y -74- 201206943 R52The compound represented (hereinafter abbreviated as compound (X)), and formula (Y-74-201206943 R52

N〇2 (式中,環構造A同上述定義,R52及R53獨立爲羥基、碳 數1至10之烷基、碳數1至10之烷氧基或碳數6至20之芳氧 基、或R52及R53鍵結且與其鍵結之硼原子同時形成含硼環 )所表示之化合物(以下略記爲化合物(Y))之鈴木偶 合反應而得。 R5()及R51所表示之鹵原子如,氯原子、溴原子及碘原 子。 R52及R53所表示之碳數1至10之烷基如,甲基、乙基 、η-丙基、異丙基、η-丁基、sec-丁基、tert-丁基、η-戊 基、新戊基、環戊基、η-己基、環己基、η-庚基、η-辛基 、η-壬基、η-癸基、1,2-二甲基丙基等之直鏈狀、支鏈狀 或環狀烷基。碳數1至10之烷氧基如,甲氧基、乙氧基、 η-丙氧基、η-丁氧基及η-己氧基。碳數6至20之芳氧基如 ,苯氧基、1-萘氧基及2-萘氧基。 R52及R53鍵結且與其鍵結之硼原子同時形成之硼環如 ,1,3,2-二氧雜環戊硼、4,4,5,5-四甲基-1,3,2-二氧雜環戊 硼、5,5-二甲基.-1,3,2-二氧雜環己硼烷、1,3,2-苯并二氧 雜環戊硼烯及9-硼二環3,3,1-壬烷環。 化合物(X)與化合物(Υ)之鈴木偶合反應可以已 知條件實施。 化合物(X)例如可依據 Chem. Mater. 2010,22,5314 記載之方法,使苯并[l,2-b: 4,5-b’]二雜環與n-丁基鋰反 -75- 201206943 應後’使所得生成物與四鹵甲烷反應而得。 環構造c爲式(C2)所表示之雜[3,2-b]雜環或式(C3 )所表示之苯并[l,2-b : 4,5-b’]二雜環之化合物(1)例如 可藉由,式(8 ):N〇2 (wherein, ring structure A is the same as defined above, and R52 and R53 are independently a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms or an aryloxy group having 6 to 20 carbon atoms; Or a Suzuki coupling reaction in which a compound represented by R52 and R53 and a boron atom bonded thereto form a boron-containing ring (hereinafter, abbreviated as a compound (Y)). The halogen atom represented by R5() and R51 is, for example, a chlorine atom, a bromine atom and an iodine atom. The alkyl group having 1 to 10 carbon atoms represented by R52 and R53 is, for example, methyl, ethyl, η-propyl, isopropyl, η-butyl, sec-butyl, tert-butyl, η-pentyl. , neopentyl, cyclopentyl, η-hexyl, cyclohexyl, η-heptyl, η-octyl, η-fluorenyl, η-fluorenyl, 1,2-dimethylpropyl, etc. , branched or cyclic alkyl. Alkoxy groups having 1 to 10 carbon atoms are, for example, methoxy, ethoxy, η-propoxy, η-butoxy and η-hexyloxy. The aryloxy group having 6 to 20 carbon atoms is phenoxy, 1-naphthyloxy and 2-naphthyloxy. A boron ring in which R52 and R53 are bonded and formed with a boron atom bonded thereto, such as 1,3,2-dioxaborolan, 4,4,5,5-tetramethyl-1,3,2- Dioxolane, 5,5-dimethyl.-1,3,2-dioxacycloborane, 1,3,2-benzodioxolane and 9-boron Ring 3,3,1-decane ring. The Suzuki coupling reaction of the compound (X) with the compound (Υ) can be carried out under known conditions. The compound (X) can be, for example, benzo[l,2-b:4,5-b']bicyclo and n-butyllithium--75- according to the method described in Chem. Mater. 2010, 22, 5314. 201206943 After the reaction, the obtained product was reacted with tetrahalomethane. The ring structure c is a hetero[3,2-b]heterocyclic ring represented by the formula (C2) or a benzo[l,2-b:4,5-b']diheterocyclic compound represented by the formula (C3). (1) For example, by equation (8):

(式中,環構造A、環構造B、W及Z同上述定義,環構造 C爲式(C2)所表示之雜[3,2_b]雜環或式(C3)所表示之 苯并[l,2-b: 4,5-b’]二雜環’ R8及R9獨立爲鹵原子) 所表示之化合物(以下略記爲化合物(8 ))與胺化合物 (4 )反應而得。 又’環構造C爲式(C2 )所表示之雜[3,2-b]雜環或式 (C3 )所表示之苯并[1,2-b : 4,5-b,]二雜環之化合物(1 )也可藉由,式(9 ):(wherein, ring structure A, ring structure B, W and Z are the same as defined above, and ring structure C is a heterocyclic [3,2_b] heterocyclic ring represented by formula (C2) or a benzo[l] represented by formula (C3). , a compound represented by 2-b: 4,5-b']bicyclo"R8 and R9 independently as a halogen atom) (hereinafter abbreviated as compound (8)) is reacted with an amine compound (4). Further, the 'ring structure C is a heterocyclic [3,2-b] heterocyclic ring represented by the formula (C2) or a benzo[1,2-b:4,5-b,] diheterocyclic ring represented by the formula (C3). The compound (1) can also be obtained by the formula (9):

(式中’環構造A、環構造B、W及Z同上述定義,環構造 C爲式(C2)所表不之雜[3,2-b]雜環或式(C3)所表示之 苯并[l,2-b: 4,5-b’]二雜環,R8及R9同上述定義) 所表不之化合物(以下略記爲化合物(9))與胺化合物 (4)反應之方法製造。 R8及R9所表不之齒原子如’溴原子及姚原子。 -76- 201206943 化合物(8 )及化合物(9 )如下述化合物。(In the formula, 'ring structure A, ring structure B, W and Z are as defined above, and ring structure C is a heterocyclic [3,2-b] heterocyclic ring represented by formula (C2) or benzene represented by formula (C3) And [l,2-b: 4,5-b'] diheterocyclic ring, R8 and R9 are the same as defined above). The compound (hereinafter abbreviated as compound (9)) is reacted with the amine compound (4). . R8 and R9 do not represent a tooth atom such as a 'bromine atom and a Yao atom. -76- 201206943 The compound (8) and the compound (9) are as the following compounds.

化合物(8 )與胺化合物(4 )之反應,及化合物(9 )與胺化合物(4 )之反應可以同前述化合物(2 )與胺化 合物(4 )之反應實施。 胺化合物(4 )之使用量相對於化合物(8 )或化合物 (9 ) 1莫耳一般爲1至50莫耳,較佳爲2至20莫耳,更佳爲 -77- 201206943 2至1 5莫耳。 將化合物(8)或化合物(9)溶解於有機溶劑時,所 使用之溶劑量一般爲’使所得溶液中化合物(8)相對於 溶劑每1升或化合物(9)爲0.0001至2〇莫耳,較佳爲 0.001至10莫耳,更佳爲001至5莫耳。 上述反應較佳於存在鈀觸媒及鹼下進行。 鈀觸媒之使用量相對於化合物(8)或化合物(9) 1 莫耳’於鈀原子換算下一般爲0.0001至0.3莫耳,較佳爲 0.0001 至 0.2莫耳· 鈀觸媒一般係藉由’有機溶劑中使配位基接觸鈀化合 物而得。可使用反應之前於有機溶劑中使配位基接觸鈀化 合物而得之鈀觸媒。又可於反應系內使配位基接觸鈀化合 物,而於反應系中調製鈀觸媒。 配位基如,與前述化合物(2)與胺化合物(4)反應 所使用之配位基相同之物》鈀化合物也如,與前述化合物 (2 )與胺化合物(4 )反應所使用之鈀化合物相同之物。 鹼也如,與前述化合物(2)與胺化合物(4)反應所使用 之鹼相同之物。 鹼之使用量相對於化合物(8)或化合物(9) 1莫耳 —般爲0.1至25莫耳,較佳爲1至20莫耳,更佳爲2至10莫 耳。鹼之使用量相對於化合物(8)或化合物(9) 1莫耳 爲0.1莫耳以上時,傾向減少未反應之胺化合物量而爲佳 〇The reaction of the compound (8) with the amine compound (4), and the reaction of the compound (9) with the amine compound (4) can be carried out by reacting the compound (2) with the amine compound (4). The amine compound (4) is used in an amount of usually 1 to 50 moles, preferably 2 to 20 moles, more preferably -77 to 201206943 2 to 1 5 with respect to the compound (8) or the compound (9). Moor. When the compound (8) or the compound (9) is dissolved in an organic solvent, the amount of the solvent to be used is generally 'the compound (8) in the obtained solution is 0.0001 to 2 mol per 1 liter or the compound (9) relative to the solvent. Preferably, it is from 0.001 to 10 moles, more preferably from 001 to 5 moles. The above reaction is preferably carried out in the presence of a palladium catalyst and a base. The palladium catalyst is generally used in an amount of 0.0001 to 0.3 mol, preferably 0.0001 to 0.2 mol per palladium atom, based on the compound (8) or the compound (9). 'In the organic solvent, the ligand is brought into contact with the palladium compound. A palladium catalyst obtained by contacting a ligand with a palladium compound in an organic solvent before the reaction can be used. Further, the ligand may be contacted with the palladium compound in the reaction system to prepare a palladium catalyst in the reaction system. The ligand is, for example, the same as the ligand used for the reaction of the above compound (2) with the amine compound (4). The palladium compound is also, for example, palladium used for the reaction with the above compound (2) and the amine compound (4). The compound is the same. The base is also the same as the base used for the reaction of the above compound (2) with the amine compound (4). The amount of the base to be used is usually 0.1 to 25 moles, preferably 1 to 20 moles, more preferably 2 to 10 moles, per mole of the compound (8) or the compound (9). When the amount of the base used is 0.1 mol or more based on the compound (8) or the compound (9), the amount of the base tends to decrease the amount of the unreacted amine compound.

化合物(3 )與胺化合物(4 )之反應溫度一般爲0 °C -78- 201206943 至反應混合物之回流溫度,較佳爲40至200 °C。反應時間 一般爲1分鐘至120小時。 進行一定時間反應後,例如可藉由將水或稀鹽酸加入 反應混合物中,使反應急冷。反應急冷後藉由萃取、洗淨 等一般之後處理步驟可取出化合物(1)。取出之化合物 (1)可藉由再結晶、昇華、各種色譜法等一般之精製步 驟再精製。 化合物(8 )例如可藉由式(1 〇 ):The reaction temperature of the compound (3) with the amine compound (4) is usually from 0 °C to -78 to 201206943 to the reflux temperature of the reaction mixture, preferably from 40 to 200 °C. The reaction time is usually from 1 minute to 120 hours. After the reaction for a certain period of time, the reaction can be quenched, for example, by adding water or dilute hydrochloric acid to the reaction mixture. After the reaction is quenched, the compound (1) can be taken out by a usual post-treatment step such as extraction or washing. The compound (1) taken out can be re-refined by a general purification step such as recrystallization, sublimation or various chromatography. The compound (8) can be, for example, by the formula (1 〇 ):

(式中’環構造A、環構造B、環構造c、W及Z同上述定 義’ R2Q及R21獨立爲氫原子或鹵原子,但r2〇及r2i中任何 一方爲氣原子) 所表示之化合物(以下略記爲化合物(i 〇 ))與鹵化劑反 應而得。 化合物(9 )例如可藉由式(1〖)··(In the formula, the ring structure A, the ring structure B, the ring structure c, W and Z are the same as defined above. R2Q and R21 are independently a hydrogen atom or a halogen atom, but any of r2〇 and r2i are gas atoms) (hereinafter, abbreviated as compound (i 〇)) is obtained by reacting with a halogenating agent. Compound (9) can be, for example, by formula (1)

(式中,環構造A、環構造B、環構造C、Χ、γ、r2。及r21 同上述定義) 所表示之化合物(以下略記爲化合物(丨i ))與鹵化劑反 應而得。 -79- 201206943 R2Q及R21所表示之鹵原子如,溴原子及碘原子。 化合物(1 0 )及化合物(1 1 )如下述化合物。(In the formula, the ring structure A, the ring structure B, the ring structure C, Χ, γ, r2, and r21 are as defined above), the compound (hereinafter abbreviated as the compound (丨i)) is reacted with a halogenating agent. -79- 201206943 The halogen atom represented by R2Q and R21 is, for example, a bromine atom and an iodine atom. The compound (10) and the compound (1 1 ) are as the following compounds.

化合物(10 )及化合物(1 1 )例如可依Synth. Met. 2002,130,139、J. Org. Chem. 2003,68,9813、J. Am. Chem. Soc. 2007,129,1 23 86、Org. Lett. 2008, 1 0,43 23 等所記載之方法製造。 化合物(10)與鹵化劑之反應,及化合物(11)與鹵 化劑之反應各自較佳於有機溶劑中進行。 有機溶劑如’與前述化合物(5 )與鹵化劑反應所使 用之有機溶劑相同之有機溶劑,較佳爲甲苯、氯仿、四氯 • 80 - 201206943 化碳及N,N-二甲基甲醯胺。 鹵化劑之使用量相對於化合物(i 0 )或化合物(n ) 1莫耳一般爲0.1至50莫耳,較佳爲〇·5至2〇莫耳,更佳爲】 至10莫耳。 將化合物(10)或化合物(11)溶解於有機溶劑時, 所使用之溶劑量一般爲,相對於溶劑每1升使所得溶液中 之化合物(10)或化合物(11)爲0.0001至20莫耳,較佳 爲0.001至10莫耳,更佳爲0.01至5莫耳。 鹵化劑如,Ν -溴號拍醯亞胺、2 -溴乙醯胺、溴、碘、 碘-高碘酸之組合、單氯化碘-過乙酸之組合、及苄基三甲 基銨二氯碘化物-氯化鋅(II)之組合等,較佳爲Ν -溴琥 珀醯亞胺、溴及碘-高碘酸之組合。 不易進行反應時,觸媒量反應系中可添加過氧化苯醯 或偶氮雙丁腈等之添加劑。 反應溫度一般爲-78 °C至反應混合物之回流溫度,較 佳爲-20°C至5 0°C。反應時間一般爲1分鐘至48小時。 進行一定時間反應後,例如可藉由將水加入反應混合 物中,使反應急冷。反應急冷後,藉由萃取、洗淨等一般 之後處理步驟可取出化合物(1)。取出之化合物(1)可 藉由再結晶、昇華、各種色譜法等一般之精製方法再精製 〇 化合物(8 )及化合物(9 )例如可依特開 2008-08 1494號公報所記載之方法製造。 本發明之化合物(1)可溶於有機溶劑’因此含有化 -81 - 201206943 合物(1)與有機溶劑之溶液可利用塗佈成膜加工製造後 述之本發明之薄膜(有機半導體活性層)而爲佳。 可溶解化合物(1)之有機溶劑如,苯、甲苯、二甲 苯、四磷、来、氯苯、0-二氯苯、三氯苯、氟苯、茴香醚 等之芳香族烴溶劑、二氯甲烷、氯仿、1,2-二氯乙烷、 1,1’,2,2’-四氯乙烷、四氯乙烯、四氯化碳等之鹵化脂肪 族烴溶劑、二乙基醚、二噁烷、四氫呋喃等之醚溶劑、戊 烷、己烷、庚烷、辛烷、環己烷等之脂肪族烴溶劑、丙酮 、甲基乙基酮、甲基異丁基酮、環己酮等之酮溶劑、乙酸 乙酯、乙酸丁酯等之酯溶劑、乙腈、丙腈、甲氧基乙腈、 戊二腈、苯腈等之腈溶劑,及二甲基亞颯、環丁楓、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯烷酮 等之非質子性極性溶劑。其中較佳爲甲苯、二甲苯、四磷 、采、氯苯、〇-二氯苯、二氯甲烷、氯仿及四氫呋喃。可 組合使用2種以上之有機溶劑。 溶解化合物(1)之溶液中化合物(1)之濃度一般爲 0.001至50重量%,較佳爲〇.〇1至1〇重量%,更佳爲〇.1至5 重量%。 該溶液可僅含有化合物(1),又於不會明顯損害後 述薄膜之載體移動度之範圍內,可含有防氧化劑、安定劑 、不同於化合物(1)之有機半導體材料、有機絕緣性材 料等。 不同於化合物(1)之有機半導體材料可爲低分子材 料’或高分子材料。高分子材料可爲,將高分子交聯反應 -82- 201206943 而得之物。較佳爲高分子材料。具體例如,聚乙炔及其衍 生物、聚噻吩及其衍生物、聚伸噻嗯基伸乙烯酯及其衍生 物、聚伸苯酯及其衍生物、聚伸苯基伸乙烯酯及其衍生物 、聚吡咯及其衍生物、聚苯胺及其衍生物、聚三芳基胺及 其衍生物、聚喹啉及其衍生物'紫蘇烯及其衍生物、丁省 及其衍生物、戊烯及其衍生物、酞菁及其衍生物等。本發 明之薄膜中’相對於不同於化合物(1)之有機半導體材 料與化合物(1)之合計100重量%,化合物(1)之含量 較佳爲10重量%以上,更佳爲20重量%以上。 前述有機絕緣性材料可爲低分子材料或高分子材料。 高分子材料可爲’將高分子交聯反應而得之物。較佳爲高 分子材料。具體例如’聚苯乙烯、聚碳酸酯、聚二甲基矽 氧烷、尼龍、聚醯亞胺、環狀烯烴共聚物、環氧聚合物、 纖維素、聚環氧甲烷、聚烯烴系聚合物、聚乙烯系聚合物 '聚酯系聚合物、聚醚系聚合物、聚醯胺系聚合物、氟系 聚合物、生分解性塑料、苯酚系樹脂、胺基樹脂、不飽和 聚酯樹脂、二烯丙基酞酸酯樹脂、環氧樹脂、聚醯亞胺樹 脂、聚胺基甲酸酯樹脂、聚矽氧烷樹脂、及各種聚合物單 位組合而得之共聚物。本發明之薄膜中,相對於有機絕緣 性材料與化合物(丨)之合計100重量%,化合物(1)之 含量較佳爲10重量%以上,更佳爲20重量%以上。 含有化合物(1)與有機溶劑之溶液可藉由,一般以 10°C至200 °C,較佳以20°C至150°C將化合物(1 )混入溶 劑中溶解而得。 -83- 201206943 其次將說明本發明之薄膜及有機半導體裝置。 本發明之薄膜爲’含有化合物(1)之薄膜,較佳爲 僅由化合物(1)形成之薄膜。薄膜之厚度一般爲111111至 10仁m,較佳爲5nm至1;/ rn。 本發明之薄膜爲具有發光性時,此時可作爲發光性薄 膜用。該’發光性薄膜〃係指,光或電性刺激之條件下會 發光之薄膜。 發光性薄膜適用爲發光元件之材料,具有發光性薄膜 之發光元件爲本發明之一項,本發明之發光元件適用爲有 機發光二極管等之材料。該、發光元件〃係指,使用發光 性薄膜之裝置。 又,本發明之薄膜爲具有與半導體相同之導電性時, 適用爲導電性薄膜。該"導電性薄膜〃係指,光或電性刺 激之條件下具有導電性之薄膜。具有與半導體相同之導電 性之導電性薄膜可作爲有機半導體活性層用。導電性薄膜 適用爲後述之有機電晶體等之有機半導體裝置等之材料。 本發明之薄膜之形成方法如塗佈成膜加工。該塗佈成 膜加工係指’如前述般具有將化合物(1)溶解於溶劑中 之後’將所得溶液塗佈於基板或絕緣體層之步驟之成膜加 工之意。 塗佈方法如,鑄塑法、浸塗法、模頭塗佈法、輥塗法 、棒塗法、旋塗法、噴塗法、網版印刷法、膠版印刷法及 微接觸印刷法。此等方法可單獨使用或2種以上組合使用 -84- 201206943 將含有化合物(1)及有機溶劑之溶液塗佈於基板或 絕緣層上形成塗佈膜後,去除該塗佈膜含有之溶劑,於基 板上或絕緣層上形成薄膜。有機溶劑一般可藉由自然乾燥 、加熱乾燥、減壓乾燥、通風乾燥等去除。又可組合此等 之2種以上乾燥以去除有機溶劑。就操作簡便觀點,較佳 爲自然乾燥或加熱乾燥。去除有機溶劑較佳如,藉由放置 大氣下或以熱板加熱基板(例如40 °C至250。(:,較佳爲50 °C至2 0 0 °C )實施。 本發明之薄膜也可藉由,使用化合物(1)分散於溶 劑之分散液之塗佈成膜加工而形成。此時同上述使用化合 物(1)之溶液之塗佈成膜加工實施。此時除了前述有機 溶劑,也可以水作爲溶劑用。 本發明之薄膜可藉由上述之塗佈成膜加工等之簡便方 法形成。 本發明之薄膜也可利用化合物(1),使用真空蒸鍍 法、濺鍍法、CVD法、分子線外延成長法等之供給真空步 驟形成薄膜之方法形成薄膜。 以真空蒸鍍法形成薄膜之方法爲,真空下於坩堝或金 屬皿中加熱化合物(1),將蒸發之化合物(1)蒸鍍於基 板或絕緣體材料之方法。蒸鍍時之真空度一般爲 以下,較佳爲1x1 〇·3Ρ a以下。蒸鍍時之基板溫度一般爲〇 °C至3 00 °C ,較佳爲2(TC至200 °C。蒸鍍速度一般爲 Ο-OOlnm/sec至 10nm/sec,較佳爲 0.01nm/sec至 lnm/sec。 藉由上述塗佈成膜加工或上述真空步驟而得之含有化 -85- 201206943 合物(η之薄膜的膜厚,可依有機半導體裝置之元件構 造而適當調節,但較佳爲lnm至10/Ζ m,更佳爲5nm至1 μ m。 本發明之有機電晶體爲,含有作爲有機半導體活性層 用之本發明之薄膜。該有機電晶體因含有本發明之化合物 (1),故具有較高之載體移動度,較佳爲nr6cm2/vs以 上之載體移動度。該載體移動度可使用參數分析器等,測 定汲電流及閘電壓後,由其測定結果與下述式(a)算出 〇 I d= (W/2 L) μ C i (Vg-V t) 2 (a) (式中,Id爲電特性之飽和領域中之汲電流,L爲有機電 晶體之通道長度,W爲有機電晶體之通道寬度,Ci爲閘絕 緣膜之每單位面積之容量,Vg爲閘電壓,Vt爲閘電壓之 臨界値電壓)。 本發明之有機電晶體如有機電場效果電晶體。 有機電場效果電晶體一般爲,具有有機半導體活性層 (以下略記爲半導體層)接連源電極及汲電極之構造,又 可爲,源電極及汲電極或半導體層接連絕緣層(介電質層 ),且該絕緣層接連閘電極。 該有機電晶體之元件構造如下述(1)至(4)之構造 〇 (1)基板/閘電極/絕緣體層/源電極-汲電極/半導體 層形成之構造; (2 )基板/閘電極/絕緣體層/半導體層/源電極-汲電 -86- 201206943 極形成之構造; (3) 基板/半導體層+源電極-汲電極/絕緣體層/閘電 極形成之構造; (4) 基板/源電極(或汲電極)/半導體層+絕緣體層 +閘電極/汲電極(或源電極)形成之構造。 各構造中存在二層以上之該半導體層時,可於同一平 面內各自設置半導體層,或層合半導體層。上述各構造中 可各自存在2個以上源電極、汲電極及閘電極。 本發明之有機電晶體中,構成源電極、汲電極及閘電 極之材料可爲,有機電晶體領域一般所使用之導電性材料 無限定,具體例如,鉛、金、銀、鎳、鉻、銅、鐵、錫、 銻鉛、鉬、銦、鈀、締、銶、銥、鋁、鍇、鍺、鉬、鎢、 氧化錫-銻、氧化銦-錫(ITO )、氟膠氧化鋅、鋅、碳、 石墨、結晶碳、銀漿及碳漿、鋰、鈹、鈉、鎂、鉀、鈣、 銃、鈦、錳、鉻、鎵、鈮、鈉、鈉-鉀合金、鎂、鋰、鋁 、鎂/銅混合物、鎂/銀混合物、鎂/鋁混合物、鎂/銦混合 物.、鋁/氧化鋁混合物、鋰/鋁混合物、及氧化鉬, 較佳爲鈾、金、銀、銅、鋁、鎳、銦、ITO、碳及氧化鉬 。又適用以摻雜等提升導電率之已知之導電性聚合物、導 電性聚苯胺、導電性聚吡咯、導電性聚噻吩、聚伸乙基二 氧噻吩與聚苯乙烯磺酸之錯合物。其中較佳爲減少與半導 體層之接觸面之電阻之物。可組合使用2種以上之電極材 料。 電極之膜厚會因材料而異,一般爲〇.1 nm至10# m, -87- 201206943 較佳爲〇.5nm至5/z m,更佳爲lnm至3/z m。又 作基板用時,閘電極之膜厚可大於上述膜厚。 電極膜之形成方法如已知之各種方法。具 空蒸鍍法、濺鍍法、塗佈法、熱轉印法、印刷 膠法等。成膜時或成膜後於必要時較佳爲進行 之方法可爲各種方法。具體例如,組合光阻製 光微影法等》又如,噴墨印刷、網版印刷、膠 版印刷等之印刷法、微接觸印刷法等之軟微影 可組合2種以上之製圖方法進行製圖。 本發明之有機電晶體所使用之源電極及汲 表面處理》接觸本發明之薄膜(有機半導體活 極表面實施表面處理時,傾向提升含有該薄膜 體之電晶體特性而爲佳。表面處理如,將上述 1-辛基硫醇、1-全氟辛基硫醇、1-十八烷基硫 十八烷基硫醇等之具有硫醇基(-SH)之飽和 苯硫醇、全氟苯硫醇等之具有硫醇之芳香族化 基硫醇、全氟噻吩基硫醇等之具有硫醇基之雜 合物等之硫醇化合物溶解於醇溶劑而得的溶液 絕緣層可使用無機氧化物或有機化合物被 絕緣膜。無機氧化物如,氧化砍、氧化銘、氧 鈦、氧化錫、氧化鈀、鈦酸鋇緦、鉻酸鈦酸鋇 鉛、鈦酸鉛鑭、鈦酸緦、鈦酸鋇、氟化鋇鎂、 酸緦鉍、鉬酸緦鉍、鉬酸鈮酸鉍及三氧化釔, 矽、氧化鋁、氧化鉅及氧化鈦。又如,氮化矽 ,閘電極兼 體例如,真 法、溶膠凝 製圖。製圖 圖與蝕刻之 版印刷、凸 方法等。又 電極可實施 性層)之電 之有機電晶 電極浸漬於 醇、1-全氟 烴化合物、 合物、噻吩 環芳香族化 中之方法。 膜等之各種 化鉅、氧化 、銷酸鈦酸 鈦酸鉍、鈦 較佳爲氧化 、氮化鋁等 -88 - 201206943 之無機氮化物。有機化合物被膜如,聚苯乙烯、聚醯亞胺 、聚醯胺、聚酯、聚丙烯酸酯、光自由基聚合系或光陽離 子聚合系之光硬化性樹脂、具有來自丙烯腈之構造單位之 共聚物、聚乙烯酚、聚乙烯醇、酣醛清漆樹脂及氰基乙基 聚三葡萄糖(Pullulan),較佳爲聚苯乙烯、聚醯亞胺、 聚乙烯酚及聚乙烯醇。 可使用2種以上之絕緣層材料。 絕緣層之膜厚會因材料而異,一般爲O.lnm至100//m ,較佳爲〇.5nm至50// m,更佳爲5nm至10/z m。 絕緣層之形成方法可使用已知之各種方法。具體例如 ,旋塗、噴塗、浸塗、鑄造、棒塗 '刮塗等之塗佈法、網 版印刷、膠版印刷、噴墨等之印刷法、真空蒸鍍法、分子 線外延成長法、離子群束法、離子鍍金法、濺鍍法、大氣 壓等離子法、CVD法等之乾式法。又如溶膠凝膠法或鋁上 之氧化鋁膜處理法、矽之熱氧化膜等於金屬上形成氧化膜 之方法。 基板如,玻璃、紙、石英、陶瓷、軟性樹脂等之基板 材料構成之板或片物。樹脂片如,聚對苯二甲酸乙二醇酯 (PET)、聚萘二甲酸乙二醇酯(PEN )、聚醚楓(PES ) 、聚醚醯亞胺、聚醚醚酮、聚伸苯基硫化物、聚丙烯酸酯 、聚醯亞胺、聚碳酸酯(PC)、纖維素三乙酸酯(T AC ) 及纖維素乙酸酯丙酸酯(CAP)。基板之厚度較佳爲1/zm 至10mm,更佳爲5// m至5mm。 接觸半導體層之絕緣體層及基板可使用經表面處理之 • 89 - 201206943 絕緣體層及基板。藉由於層合半導體層之絕緣體層上進行 表面處理,可提升元件之電晶體特性。表面處理如,使用 六甲基二矽氮烷、十八烷基三氯矽烷、辛基三氯矽烷、苯 乙基三氯矽烷等之排水化處理、使用鹽酸、硫酸、過氧化 氫水等之酸處理、使用氫氧化鈉、氫氧化鉀、氫氧化鈣、 氨等之鹼處理、臭氧處理、氟化處理、使用氧或氬等之等 離子處理、蘭米拉投影膜之形成處理、其他絕緣體等或半 導體薄膜之形成處理、機械式處理、電暈放電等之電性處 理、使用纖維等之刷洗處理等,又可組合使用2種以上之 處理方法。 進行表面處理之方法如,真空蒸鍍法、濺鍍法、塗佈 法、印刷法、溶膠凝膠法等。 半導體層上可設置由樹脂或無機化合物形成之保護膜 。藉由形成保護膜可抑制外氣之影響,可使電晶體驅動安 定化® 本發明之有機電晶體可使用於液晶顯示元件、有機電 場發光元件、電子紙、傳感器、RFIDs ( radio frequency identification cards)等之有機裝置。 【實施方式】 實施例 下面將舉實施例具體說明本發明,但本發明非限定於 此等實施例。 又,藉由氣相色譜分析及/或高速液體色譜分析確認 -90- 201206943 反應進行。各分析之條件如下所述。 <氣相色譜分析> 裝置:島津製作所製GC2010 管柱:J&W賽恩提公司製DB-1 (內徑:0.25 mm、長 :30m) <高速液體色譜分析>The compound (10) and the compound (1 1 ) can be, for example, according to Synth. Met. 2002, 130, 139, J. Org. Chem. 2003, 68, 9813, J. Am. Chem. Soc. 2007, 129, 1 23 86 , Org. Lett. 2008, 1 0, 43 23 and other methods are manufactured. The reaction of the compound (10) with a halogenating agent, and the reaction of the compound (11) with a halogenating agent are preferably carried out in an organic solvent. The organic solvent is, for example, the same organic solvent as the organic solvent used for the reaction of the above compound (5) with a halogenating agent, preferably toluene, chloroform, tetrachloro-80-201206943 carbon and N,N-dimethylformamide . The halogenating agent is used in an amount of usually 0.1 to 50 moles, preferably 〇 5 to 2 moles, more preferably 10 moles per mole of the compound (i 0 ) or the compound (n ). When the compound (10) or the compound (11) is dissolved in an organic solvent, the amount of the solvent to be used is generally 0.0001 to 20 mol per 1 liter of the compound (10) or the compound (11) in the resulting solution. It is preferably 0.001 to 10 moles, more preferably 0.01 to 5 moles. Halogenating agents such as hydrazine-bromo quinone imine, 2-bromoacetamide, bromine, iodine, iodine-periodic acid combination, monoethyl iodine-peracetic acid combination, and benzyltrimethylammonium A combination of chloroiodide-zinc chloride (II) or the like is preferably a combination of bismuth-bromosuccinimide, bromine and iodine-periodic acid. When it is difficult to carry out the reaction, an additive such as benzoquinone or azobisbutyronitrile may be added to the catalyst amount reaction system. The reaction temperature is usually -78 ° C to the reflux temperature of the reaction mixture, preferably -20 ° C to 50 ° C. The reaction time is usually from 1 minute to 48 hours. After a reaction for a certain period of time, the reaction can be quenched, for example, by adding water to the reaction mixture. After the reaction is quenched, the compound (1) can be taken out by a usual post-treatment step such as extraction or washing. The compound (1) to be taken out can be further purified by a general purification method such as recrystallization, sublimation or various chromatography methods, and the compound (8) and the compound (9) can be produced, for example, by the method described in JP-A-2008-08 1494. . The compound (1) of the present invention is soluble in an organic solvent. Therefore, the solution of the compound (1) and the organic solvent can be used to produce a film (organic semiconductor active layer) of the present invention described later by coating film formation. And better. An organic solvent capable of dissolving the compound (1), such as benzene, toluene, xylene, tetraphosphorus, chlorobenzene, 0-dichlorobenzene, trichlorobenzene, fluorobenzene, anisole, etc., an aromatic hydrocarbon solvent, dichloro Halogenated aliphatic hydrocarbon solvent of methane, chloroform, 1,2-dichloroethane, 1,1', 2,2'-tetrachloroethane, tetrachloroethylene, carbon tetrachloride, etc., diethyl ether, two An ether solvent such as an alkylene or tetrahydrofuran; an aliphatic hydrocarbon solvent such as pentane, hexane, heptane, octane or cyclohexane; acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, etc. An ketone solvent, an ester solvent such as ethyl acetate or butyl acetate; a nitrile solvent such as acetonitrile, propionitrile, methoxyacetonitrile, glutaronitrile or benzonitrile; and dimethyl hydrazine, cyclazone, and N, An aprotic polar solvent such as N-dimethylformamide, N,N-dimethylacetamide or N-methyl-2-pyrrolidone. Among them, toluene, xylene, tetraphosphorus, chlorobenzene, hydrazine-dichlorobenzene, dichloromethane, chloroform and tetrahydrofuran are preferred. Two or more organic solvents may be used in combination. The concentration of the compound (1) in the solution of the dissolved compound (1) is usually 0.001 to 50% by weight, preferably 〇1 to 1% by weight, more preferably 〇1 to 5% by weight. The solution may contain only the compound (1), and may contain an antioxidant, a stabilizer, an organic semiconductor material different from the compound (1), an organic insulating material, etc., within a range that does not significantly impair the carrier mobility of the film described later. . The organic semiconductor material different from the compound (1) may be a low molecular material' or a polymer material. The polymer material may be obtained by crosslinking the polymer -82-201206943. It is preferably a polymer material. Specifically, for example, polyacetylene and its derivatives, polythiophene and its derivatives, polythiophene vinyl ester and its derivatives, polyphenylene ester and its derivatives, polyphenylene vinyl ester and its derivatives, poly Pyrrole and its derivatives, polyaniline and its derivatives, polytriarylamine and its derivatives, polyquinoline and its derivatives 'peperene and its derivatives, Ding and its derivatives, pentene and its derivatives , phthalocyanine and its derivatives. In the film of the present invention, the content of the compound (1) is preferably 10% by weight or more, more preferably 20% by weight or more based on 100% by weight based on the total of the organic semiconductor material different from the compound (1) and the compound (1). . The aforementioned organic insulating material may be a low molecular material or a high molecular material. The polymer material may be obtained by crosslinking a polymer. It is preferably a high molecular material. Specifically, for example, 'polystyrene, polycarbonate, polydimethyl siloxane, nylon, polyimine, cyclic olefin copolymer, epoxy polymer, cellulose, polymethylene oxide, polyolefin polymer Polyethylene polymer, polyester polymer, polyether polymer, polyamine polymer, fluorine polymer, biodegradable plastic, phenol resin, amine resin, unsaturated polyester resin, A copolymer obtained by combining a diallyl phthalate resin, an epoxy resin, a polyimide resin, a polyurethane resin, a polyoxyalkylene resin, and various polymer units. In the film of the present invention, the content of the compound (1) is preferably 10% by weight or more, and more preferably 20% by weight or more based on 100% by weight of the total of the organic insulating material and the compound (丨). The solution containing the compound (1) and an organic solvent can be obtained by, for example, dissolving the compound (1) in a solvent at 10 ° C to 200 ° C, preferably at 20 ° C to 150 ° C. -83-201206943 Next, the film and organic semiconductor device of the present invention will be described. The film of the present invention is a film containing the compound (1), preferably a film formed only of the compound (1). The thickness of the film is generally from 111111 to 10 lm, preferably from 5 nm to 1; / rn. When the film of the present invention has luminosity, it can be used as a luminescent film at this time. The term "luminescent film" refers to a film that emits light under conditions of light or electrical stimulation. The luminescent film is suitably used as a material of a light-emitting element, and a light-emitting element having a light-emitting film is one of the inventions, and the light-emitting element of the present invention is suitably used as a material such as an organic light-emitting diode. The light-emitting element 〃 refers to a device using a light-emitting film. Further, when the film of the present invention has the same conductivity as that of a semiconductor, it is preferably used as a conductive film. The "conductive film" refers to a film having electrical conductivity under conditions of light or electrical stimulation. A conductive film having the same conductivity as that of a semiconductor can be used as an organic semiconductor active layer. The conductive film is suitably used as a material such as an organic semiconductor device such as an organic transistor described later. The method for forming a film of the present invention is, for example, a coating film forming process. The coating film forming process means the film forming process of the step of applying the solution (1) to a substrate or an insulator layer after the compound (1) is dissolved in a solvent as described above. The coating method is, for example, casting, dip coating, die coating, roll coating, bar coating, spin coating, spray coating, screen printing, offset printing, and microcontact printing. These methods may be used alone or in combination of two or more. -84-201206943 A solution containing the compound (1) and an organic solvent is applied onto a substrate or an insulating layer to form a coating film, and then the solvent contained in the coating film is removed. A thin film is formed on the substrate or on the insulating layer. The organic solvent can generally be removed by natural drying, heat drying, reduced pressure drying, air drying, and the like. Further, two or more of these may be combined to be dried to remove the organic solvent. From the standpoint of ease of handling, it is preferred to dry naturally or heat dry. The removal of the organic solvent is preferably carried out by placing the substrate or heating the substrate with a hot plate (for example, 40 ° C to 250 ° (:, preferably 50 ° C to 200 ° C). The film of the present invention can also be used. It is formed by coating film formation processing using the dispersion of the compound (1) dispersed in a solvent. At this time, the coating film formation process using the solution of the compound (1) described above is carried out. In addition to the above organic solvent, Water can be used as a solvent. The film of the present invention can be formed by a simple method such as coating film formation or the like described above. The film of the present invention can also utilize the compound (1), using a vacuum evaporation method, a sputtering method, or a CVD method. And a method of forming a film by a vacuum step by a molecular line epitaxial growth method, etc. Forming a film by vacuum evaporation is a method of heating a compound (1) in a crucible or a metal dish under vacuum, and evaporating the compound (1) A method of vapor deposition on a substrate or an insulator material. The degree of vacuum during vapor deposition is generally the following, preferably 1 x 1 〇 · 3 Ρ a or less. The substrate temperature during vapor deposition is generally 〇 ° C to 300 ° C, preferably 2 (TC to 200 ° C. evaporation rate It is generally Ο-001 nm/sec to 10 nm/sec, preferably 0.01 nm/sec to 1 nm/sec. The compound-85-201206943 (n-yield) obtained by the above-mentioned coating film forming process or the above vacuum step The film thickness of the film can be appropriately adjusted depending on the element structure of the organic semiconductor device, but is preferably from 1 nm to 10 / Ζ m, more preferably from 5 nm to 1 μm. The organic transistor of the present invention contains, as an organic semiconductor, active. The film of the present invention for use in the layer. The organic crystal crystal has a high carrier mobility, preferably a carrier mobility of nr6cm2/vs or more, because it contains the compound (1) of the present invention. The carrier mobility can be used as a parameter. After measuring the 汲 current and the thyristor voltage, the analyzer calculates the 〇I d= (W/2 L) μ C i (Vg-V t) 2 (a) from the measurement result and the following formula (a). Id is the 汲 current in the saturation region of the electrical characteristics, L is the channel length of the organic transistor, W is the channel width of the organic transistor, Ci is the capacity per unit area of the gate insulating film, Vg is the gate voltage, and Vt is The critical 値 voltage of the gate voltage). The organic transistor of the present invention is an organic electric field effect transistor. The electric field effect transistor generally has a structure in which an organic semiconductor active layer (hereinafter abbreviated as a semiconductor layer) is connected to the source electrode and the germanium electrode, and the source electrode and the germanium electrode or the semiconductor layer are connected to the insulating layer (dielectric layer). And the insulating layer is connected to the gate electrode. The element structure of the organic transistor is as follows: (1) to (4) structure 〇 (1) substrate / gate electrode / insulator layer / source electrode - germanium electrode / semiconductor layer formation structure (2) Substrate/gate electrode/insulator layer/semiconductor layer/source electrode-汲电-86- 201206943 Polar formation structure; (3) Substrate/semiconductor layer+source electrode-汲 electrode/insulator layer/gate electrode formation (4) A structure in which a substrate/source electrode (or germanium electrode)/semiconductor layer+insulator layer+gate electrode/germanium electrode (or source electrode) is formed. When two or more layers of the semiconductor layer are present in each structure, a semiconductor layer or a semiconductor layer may be provided in the same plane. In each of the above structures, two or more source electrodes, a germanium electrode, and a gate electrode may be present. In the organic transistor of the present invention, the material constituting the source electrode, the ytterbium electrode, and the gate electrode may be a conductive material generally used in the field of organic transistors, and specific examples thereof include lead, gold, silver, nickel, chromium, and copper. , iron, tin, antimony, lead, molybdenum, indium, palladium, tantalum, niobium, tantalum, aluminum, niobium, tantalum, molybdenum, tungsten, tin oxide-bismuth, indium oxide-tin (ITO), fluorine rubber zinc oxide, zinc, Carbon, graphite, crystalline carbon, silver paste and carbon paste, lithium, barium, sodium, magnesium, potassium, calcium, barium, titanium, manganese, chromium, gallium, antimony, sodium, sodium-potassium alloy, magnesium, lithium, aluminum, Magnesium/copper mixture, magnesium/silver mixture, magnesium/aluminum mixture, magnesium/indium mixture, aluminum/aluminum oxide mixture, lithium/aluminum mixture, and molybdenum oxide, preferably uranium, gold, silver, copper, aluminum, nickel , indium, ITO, carbon and molybdenum oxide. Further, a known conductive polymer having a conductivity such as doping, a conductive polyaniline, a conductive polypyrrole, a conductive polythiophene, a poly(ethylene dioxythiophene) and a polystyrenesulfonic acid complex are used. Among them, it is preferable to reduce the electric resistance of the contact surface with the semiconductor layer. Two or more types of electrode materials can be used in combination. The film thickness of the electrode varies depending on the material, and is generally from 1 nm to 10 # m, and -87 to 201206943 is preferably from 5 nm to 5/z m, more preferably from 1 nm to 3/z m. When used as a substrate, the film thickness of the gate electrode may be larger than the film thickness. The method of forming the electrode film is as known in various methods. An empty vapor deposition method, a sputtering method, a coating method, a thermal transfer method, a printing method, and the like. The method which is preferably carried out at the time of film formation or after film formation may be various methods. Specifically, for example, a combined photoresist photolithography method, etc., such as a printing method such as inkjet printing, screen printing, or offset printing, or a soft lithography method such as a microcontact printing method, can be combined with two or more drawing methods for drawing. . The source electrode and the ruthenium surface treatment used in the organic transistor of the present invention are in contact with the film of the present invention (when the surface of the organic semiconductor electrode is subjected to surface treatment, it is preferred to enhance the crystal characteristics of the film body.) a saturated benzenethiol or perfluorobenzene having a thiol group (-SH), such as the above 1-octyl mercaptan, 1-perfluorooctyl mercaptan, or 1-octadecylthiooctadecyl mercaptan A solution of a thiol compound having a thiol group such as a thiol-containing aromatic thiol or a perfluorothiophene thiol, which is dissolved in an alcohol solvent, may be used for inorganic oxidation. The organic compound is an insulating film. Inorganic oxides such as oxidized chopped, oxidized, oxytitanium, tin oxide, palladium oxide, barium titanate, barium titanate titanate, lead titanate tantalum, barium titanate, titanium Barium strontium, magnesium strontium fluoride, strontium strontium sulphate, barium bismuth molybdate, barium strontium bismuth citrate and antimony trioxide, antimony, aluminum oxide, oxidized giant and titanium oxide. Another example is tantalum nitride, a gate electrode and a body, for example. , true method, sol condensation diagram, drawing diagram and etching plate printing, convex method, etc. Further, the electrode of the electrode can be electrically immersed in an alcohol, a 1-perfluorocarbon compound, or a thiophene ring. Various types of membranes, such as oxides, oxidized, barium titanate, barium titanate, and titanium are preferably inorganic nitrides of -88 - 201206943. Organic compound film such as polystyrene, polyimide, polyamine, polyester, polyacrylate, photoradical polymerization or photocationic polymerization photocurable resin, copolymerization with structural units derived from acrylonitrile The material, polyvinyl phenol, polyvinyl alcohol, furfural varnish resin and cyanoethyl polytriglucose (Pullulan) are preferably polystyrene, polyimide, polyvinyl phenol and polyvinyl alcohol. Two or more insulating layer materials can be used. The film thickness of the insulating layer varies depending on the material, and is generally from 0.1 nm to 100 / / m, preferably from 5 5 nm to 50 / / m, more preferably from 5 nm to 10 / z m. As the method of forming the insulating layer, various methods known in the art can be used. Specifically, for example, a coating method such as spin coating, spray coating, dip coating, casting, bar coating, draw coating, screen printing, offset printing, inkjet printing, vacuum evaporation, molecular line epitaxy, and ion Dry method such as group beam method, ion gold plating method, sputtering method, atmospheric pressure plasma method, CVD method, or the like. Further, as the sol-gel method or the aluminum oxide film treatment method on aluminum, the thermal oxide film of ruthenium is equal to the method of forming an oxide film on the metal. The substrate is a plate or a sheet made of a substrate material such as glass, paper, quartz, ceramic, or soft resin. Resin tablets such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether maple (PES), polyether phthalimide, polyether ether ketone, poly benzene Base sulfide, polyacrylate, polyimine, polycarbonate (PC), cellulose triacetate (T AC ) and cellulose acetate propionate (CAP). The thickness of the substrate is preferably from 1/zm to 10mm, more preferably from 5/m to 5mm. The surface layer of the insulator layer and the substrate can be used for the surface layer of the insulator layer and the substrate. The surface characteristics of the element can be improved by surface treatment on the insulator layer of the laminated semiconductor layer. For the surface treatment, for example, drainage treatment using hexamethyldioxane, octadecyltrichlorosilane, octyltrichlorodecane or phenethyltrichloromethane, or hydrochloric acid, sulfuric acid, hydrogen peroxide water or the like is used. Acid treatment, alkali treatment using sodium hydroxide, potassium hydroxide, calcium hydroxide, ammonia, etc., ozone treatment, fluorination treatment, plasma treatment using oxygen or argon, formation of a Lamyra projection film, other insulators, etc. For example, a semiconductor film formation process, a mechanical process, an electrical treatment such as corona discharge, a brushing treatment using a fiber or the like, or a combination of two or more types of treatment methods may be used. The surface treatment is carried out, for example, a vacuum deposition method, a sputtering method, a coating method, a printing method, a sol-gel method, or the like. A protective film formed of a resin or an inorganic compound may be disposed on the semiconductor layer. The effect of the external gas can be suppressed by forming a protective film, and the transistor can be driven to stabilize. The organic transistor of the present invention can be used for liquid crystal display elements, organic electroluminescent elements, electronic paper, sensors, and RFID (radio frequency identification cards). Such as organic devices. [Embodiment] Hereinafter, the present invention will be specifically described by way of Examples, but the present invention is not limited to the Examples. Further, it was confirmed by gas chromatography analysis and/or high-speed liquid chromatography analysis that -90-201206943 reaction proceeded. The conditions of each analysis are as follows. <Gas Chromatography Analysis> Apparatus: GC2010 manufactured by Shimadzu Corporation: DB-1 manufactured by J&W Sainti Co., Ltd. (inner diameter: 0.25 mm, length: 30 m) <High-speed liquid chromatography>

裝置:島津製作所製LC10AT 管柱:化學物質評價機構製L-column ODS (內徑: 4.6mm、長:15cm) 循環分取高速液體色譜精製係使用下述裝置及管柱進 行。 裝置:日本分析工業公司製LC-250HS 管柱:曰本分析工業公司製JAIGEL-ODS-AP-50L (內 徑:50mm、長:25cm) 所得之生成物係基於W-NMR、HRMS及/或 LC-HRMS之測定結果確認。 j-NMR測定之裝置:日本電子股份公司製EX270或 BRUKER公司製 DPX300 HRMS測定之裝置:日本電子股份公司製JMS-T100GC LC-HRMS測定之裝置:Applied Biosystems公司製 QSTAR XL (管柱:化學物質評價機構製L-column ODS ( 內徑:4.6mm、長:15cm)) -91 - 201206943 [實施例1 :製造3,6 -二溴-2,5 -二碘噻吩并[3,2-b]噻吩] 2.5- 二溴噻吩并[3,2-b]噻吩係藉由,噻吩并[3,2-b]噻 吩與N-溴琥珀酸醯亞胺反應調製而得(參考Dalton Trans., 2005, 874)。 3.6- 二溴噻吩并[3,2-b]噻吩係藉由,2,5-二溴噻吩并 [3,2-b]噻吩與鋰二異丙基醯胺反應調製而得(參考〇r g. Lett·,2007,9,1 005 )。 將3,6-二溴噻吩并[3,2-1)]噻吩12.0(^、碘8.188、碘酸 3.54g、硫酸0.39g、四氯化碳132ml、乙酸264ml及水41ml 放入備有攪拌子、溫度計及冷凝器之1 000mL四口燒瓶中 。氮氣下以45 °C攪拌所得之混合物20小時。將碘0.45g及 碘酸0.2 0g加入所得混合物中,再於氮氣下以45°C攪拌10 小時。將所得之反應混合物冷卻至室溫後過濾。以水及甲 醇洗淨所得之固體後,減壓下乾燥,再結晶以產率88 %得 下述式所表示之3,6-二溴-2,5-二碘噻吩并[3,2-b]噻吩之白 色結晶1 9.5 g。Apparatus: LC10AT column manufactured by Shimadzu Corporation: L-column ODS (inner diameter: 4.6 mm, length: 15 cm) manufactured by Chemical Substance Evaluation Co., Ltd. The high-speed liquid chromatography purification system was carried out by using the following apparatus and column. Device: LC-250HS column manufactured by Nippon Analytical Industries Co., Ltd.: JAIGEL-ODS-AP-50L (inner diameter: 50 mm, length: 25 cm) manufactured by Sakamoto Analytical Co., Ltd. The resulting product is based on W-NMR, HRMS, and/or The measurement result of LC-HRMS was confirmed. Apparatus for measuring by j-NMR: Apparatus for measuring the DPX300 by the EX270 or BRUKER company manufactured by JEOL Ltd.: JMS-T100GC manufactured by JEOL Ltd. LC-HRMS measuring device: QSTAR XL manufactured by Applied Biosystems Co., Ltd. (column: chemical substance) Evaluation mechanism L-column ODS (inner diameter: 4.6 mm, length: 15 cm) -91 - 201206943 [Example 1: Production of 3,6-dibromo-2,5-diiodothiophene [3,2-b Thiophene] 2.5-dibromothieno[3,2-b]thiophene is prepared by reacting thieno[3,2-b]thiophene with quinone imine N-bromosuccinate (refer to Dalton Trans., 2005, 874). 3.6-Dibromothieno[3,2-b]thiophene is obtained by reacting 2,5-dibromothieno[3,2-b]thiophene with lithium diisopropyl decylamine (refer to 〇r g. Lett·, 2007, 9, 1 005 ). 3,6-dibromothieno[3,2-1)]thiophene 12.0 (^, iodine 8.188, iodic acid 3.54 g, sulfuric acid 0.39 g, carbon tetrachloride 132 ml, acetic acid 264 ml, and water 41 ml were placed in stirring The mixture was stirred in a 1 000 mL four-necked flask of a thermometer and a condenser. The resulting mixture was stirred at 45 ° C for 20 hours under nitrogen. 0.45 g of iodine and 0.20 g of iodic acid were added to the resulting mixture, followed by stirring at 45 ° C under nitrogen. After 10 hours, the obtained reaction mixture was cooled to room temperature and then filtered. The obtained solid was washed with water and methanol, and then dried under reduced pressure, and recrystallized to give a yield of 88% of the following formula: 3,6- White crystal of bromo-2,5-diiodothieno[3,2-b]thiophene 1 9.5 g.

W-NMR ( 5、CDC13 )測定之結果未驗出1H-峰値。 [實施例2:製造3,6-二溴-2,5-雙(3-溴苯并[b]噻吩-2-基 )-噻吩井[3,2-b]噻吩] 將2,3-二溴苯并[b]噻吩22.5g (爾都里公司製)放入 -92 - 201206943 備有攪拌子、溫度計、冷凝器及滴液漏斗之500mL四口燒 瓶中。以氮取代燒瓶內後’室溫下利用注射器加入脫水四 氫呋喃230ml ’得溶液。將所得之溶液冷卻至_3〇〇c後,同 溫度下以45分鐘加入異丙基鎂溴化物之四氫呋喃溶液(濃 度:1.00M’東京化成製)76.3ml。同溫度下攪拌所得之 混合物30分鐘後,將所得之溶液冷卻至_50〇c,同溫度下 以20分鐘加入氯化鋅之二乙基醚溶液(濃度:i 〇〇m,爾 都里製)76.3ml。同溫度下攪拌所得之混合物10分鐘後, 將所得之混合物緩緩升溫至室溫,減壓下去除溶劑後,得 白色結晶。將3,6 -二溴-2,5-二碘噻吩并[3,2-15]噻吩14.0§ 及四三苯基膦2.7g (東京化成製)加入所得之結晶中,以 氮取代燒瓶內,再利用注射器加入脫水四氫呋喃2 3 0 m 1。 回流下攪拌所得之混合物7小時。將所得之溶液冷卻至室 溫後’加入1當量鹽酸及甲苯。過濾所得之混合物後,以 水及甲醇洗淨所得之固體,乾燥後得3,6-二溴-2,5-雙(3-溴苯并[b]噻吩-2-基)-噻吩并[3,2-b]噻吩之黃色結晶 相對於3,6-二溴-2,5-二碘唾吩并[3,2-b]噻吩之產 率爲73 %。The result of W-NMR (5, CDC13) measurement did not detect 1H-peak enthalpy. [Example 2: Production of 3,6-dibromo-2,5-bis(3-bromobenzo[b]thiophen-2-yl)-thiophene well [3,2-b]thiophene] 2,3- Dibromobenzo[b]thiophene 22.5 g (manufactured by Erdori Co., Ltd.) was placed in -92 - 201206943 A 500 mL four-necked flask equipped with a stir bar, a thermometer, a condenser, and a dropping funnel. After replacing the inside of the flask with nitrogen, a solution of 230 ml of dehydrated tetrahydrofuran was added by a syringe at room temperature. After the obtained solution was cooled to _3 〇〇c, 76.3 ml of a tetrahydrofuran solution (concentration: 1.00 M' manufactured by Tokyo Chemical Co., Ltd.) of isopropylmagnesium bromide was added thereto at the same temperature for 45 minutes. After stirring the resulting mixture for 30 minutes at the same temperature, the resulting solution was cooled to _50 〇c, and a solution of zinc chloride in diethyl ether was added at the same temperature for 20 minutes (concentration: i 〇〇m, manufactured by Erduri) ) 76.3ml. After the resulting mixture was stirred at the same temperature for 10 minutes, the mixture was gradually warmed to room temperature, and the solvent was evaporated under reduced pressure to give white crystals. 3,6-dibromo-2,5-diiodothio[3,2-15]thiophene 14.0 § and tetrakisphenylphosphine 2.7 g (manufactured by Tokyo Chemical Industry Co., Ltd.) were added to the obtained crystal, and the inside of the flask was replaced with nitrogen. Then, dehydrated tetrahydrofuran 2 3 0 m 1 was added using a syringe. The resulting mixture was stirred under reflux for 7 hours. After the resulting solution was cooled to room temperature, 1 equivalent of hydrochloric acid and toluene were added. After filtering the obtained mixture, the obtained solid was washed with water and methanol, and dried to give 3,6-dibromo-2,5-bis(3-bromobenzo[b]thiophen-2-yl)-thieno[ The yield of the yellow crystal of 3,2-b]thiophene relative to 3,6-dibromo-2,5-diiodopyrano[3,2-b]thiophene was 73%.

HRMS ( EI+ ) : found 719.6175 ( calcd. for C22H8Br4S4 : 7 1 9.6201 ) [實施例3] -93- 201206943 氮氣下將3,6-二溴-2,5-雙(3-溴苯并[b]噻吩-2-基)-噻吩并[3,2-b]噻吩9.00g、三(二亞苄基丙酮)二鈀2.29g 、消旋-2,2’-雙(二苯基膦基)聯萘6.23g、十二烷 基胺25.48g、鈉tert-丁氧化物l〇.57g及脫水甲苯450ml放 入備有攪拌子、溫度計及冷凝器之l〇〇〇mL四口燒瓶中》 氮環境下將所得之混合物升溫至回流後,回流24小時。將 所得之反應混合物冷卻至室溫後加入水,再以甲苯萃取。 以硫酸鎂乾燥所得之有機層後過濾。減壓下濃縮所得之濾 液後,藉由使用添加容積比0.2 %之三乙基胺之己烷與甲 苯的混合溶劑之矽膠凝膠色譜法精製。以甲苯再結晶所得 之固體後,再以循環分取高速液體色譜法(移動層:四氫 呋喃與乙腈之混合溶劑)精製,得下述式所表示之化合物 之白黃色結晶2.44g。產率25%。HRMS ( EI+ ) : found 719.6175 ( calcd. for C22H8Br4S4 : 7 1 9.6201 ) [Example 3] -93- 201206943 3,6-Dibromo-2,5-bis(3-bromobenzo[b] under nitrogen 9.00 g of thiophen-2-yl)-thieno[3,2-b]thiophene, 2.29 g of tris(dibenzylideneacetone)dipalladium, racemic-2,2'-bis(diphenylphosphino) linkage 6.23 g of naphthalene, 25.48 g of dodecylamine, 450 g of sodium tert-butoxide, and 450 ml of dehydrated toluene were placed in a l〇〇〇mL four-necked flask equipped with a stir bar, a thermometer and a condenser. Nitrogen environment The resulting mixture was heated to reflux and refluxed for 24 hours. After the resulting reaction mixture was cooled to room temperature, water was added and extracted with toluene. The resulting organic layer was dried over magnesium sulfate and filtered. The obtained filtrate was concentrated under reduced pressure, and purified by silica gel chromatography using a solvent mixture of hexane and toluene which added 0.2% by volume of triethylamine. The solid obtained by recrystallization from toluene was purified by high-speed liquid chromatography (moving layer: a mixed solvent of tetrahydrofuran and acetonitrile) to obtain a white-yellow crystal of 2.44 g of the compound represented by the following formula. The yield was 25%.

111^1^111(5/??1«,四氫呋喃-(18):0-86〇,61〇、 1.25〜1,65 ( m,36H) 、2.00〜2.13(m,4H) 、4·67 ( t N 、 C12H25111^1^111(5/??1«, tetrahydrofuran-(18): 0-86〇, 61〇, 1.25~1,65 (m, 36H), 2.00~2.13(m,4H), 4.67 ( t N , C12H25

,4H) ' 7.25 ( t - 2H ) 、7.39(t,2H) 、7.86(d,2H )、7.95 ( d,2H ) LC-HRMS ( APPI+) : found 767.3 5 5 3 ( calcd for C46H59N2S4 : 767.3556) [薄膜及以該薄膜作爲有機半導體活性層之有機電晶體之 -94- 201206943 製造例1 ] 使用發射步驟或光微影依序將鉻及金蒸鍍於玻璃基板 上,設置源及汲電極。鉻層之厚度爲5 nm,金層之厚度爲 40nm。以丙酮及異丙基醇對基板進行超音波洗淨,乾燥 後以氧等離子進行清洗,再以80 °C加熱5分鐘。通道寬爲 2mm,通道長爲50//m。對通道部分進行苯乙基三氯矽烷 處理,對電極部分進行五氟苯硫醇處理後,氮環境下滴入 前述[實施例3]製造之化合物之0.5重量/容積%的四磷溶液 ,再以旋塗法形成薄膜(有機半導體活性層)。其次將含 有氟系聚合物之溶液滴在該薄膜上,再以旋塗法形成絕緣 層。此時之薄膜厚度爲2 5nm,絕緣層厚度爲3 00nm。於絕 緣層上使用遮蔽圖罩,依序蒸鍍鉻及鋁設置閘電極,製造 圖2所示之有機電晶體。鉻層之厚度爲5nm,鋁層之厚度 爲 2 0 Onm 〇 測定所得之有機電晶體之電特性。結果閘電壓(Vg )中,相對於汲電壓(Vd )之汲電流(Id )的變化曲線爲 良好,較高之汲電壓中具有飽和領域。又,增加施加於閘 電極之負的閘電極時,也會增加負的汲電流,因此確認所 得之有機電晶體爲p型之有機電晶體。又,以前述式(a ) 算出有機電晶體之載體移動度//,結果載體移動度爲 0.25cm2/Vs。 [實施例4:製造5,5’-二溴苯并[l,2-b; 4,5-b’]二噻吩] 參考Chem. Mater·,2010, 22, 5314所記載之方法,以 -95- 201206943 下述方法製造5,5’-二溴苯并[l,2-b: 4,5-b’]二噻吩β 將苯并[l,2-b ; 4,5-b’] 一噻吩之結晶o.ggg加入備有搜 拌子及溫度計之反應容器後’以氮取代該容器內部。將脫 水四氫呋喃220ml加入該容器中,室溫(約25 °C )下溶解 結晶。將所得之溶液冷卻至-7 8 °C後,維持約_ 7 8 °C下以5 分鐘加入t-丁基鋰之己烷溶液(濃度:1.5 9M,關東化學 製)8.73ml »同溫度下攪拌所得之混合物1小時後,得反 應混合物A。以10分鐘將四溴化碳4.60g (東京化成製)溶 解於脫水四氫呋喃20ml而得之溶液,加入調整爲_78。(:之 反應混合物A中,同溫度下再攪拌所得之混合物4小時。 將所得之反應混合物升溫至室溫後,加入氯仿與水,再充 分攪拌。以塗覆放射光之過濾器過濾所得之混合物,以去 除不溶物。將所得之濾液分液後,以硫酸鎂乾燥所得之有 機層。過濾後減壓下濃縮所得之濾液,得下述式所表示之 5,5’-二溴苯并[1,2-1»:4,5-1)’]二噻吩之黃褐色結晶2.018。, 4H) ' 7.25 ( t - 2H ) , 7.39 (t, 2H), 7.86 (d, 2H ), 7.95 ( d, 2H ) LC-HRMS ( APPI + ) : found 767.3 5 5 3 ( calcd for C46H59N2S4 : 767.3556) [Thin film and organic transistor using the film as an organic semiconductor active layer-94-201206943 Production Example 1] The chromium and gold were vapor-deposited on a glass substrate in this order using an emission step or photolithography, and a source and a germanium electrode were provided. The thickness of the chromium layer is 5 nm and the thickness of the gold layer is 40 nm. The substrate was ultrasonically washed with acetone and isopropyl alcohol, dried, washed with oxygen plasma, and heated at 80 ° C for 5 minutes. The channel width is 2mm and the channel length is 50//m. The channel portion was treated with phenethyltrichloromethane, and after the electrode portion was subjected to pentafluorobenzenethiol treatment, a 0.5 wt/vol% tetraphosphorus solution of the compound produced in the above [Example 3] was dropped into the nitrogen atmosphere, and then A thin film (organic semiconductor active layer) is formed by spin coating. Next, a solution containing a fluorine-based polymer was dropped on the film, and an insulating layer was formed by spin coating. The film thickness at this time was 25 nm, and the thickness of the insulating layer was 300 nm. An organic oxide crystal as shown in Fig. 2 was fabricated by using a mask on the insulating layer and sequentially depositing chrome and aluminum to form a gate electrode. The thickness of the chromium layer was 5 nm, and the thickness of the aluminum layer was 2 0 Onm 〇 The electrical characteristics of the obtained organic transistor were measured. As a result, in the gate voltage (Vg), the curve of the 汲 current (Id) with respect to the 汲 voltage (Vd) is good, and the higher 汲 voltage has a saturation region. Further, when the negative gate electrode applied to the gate electrode is increased, a negative erbium current is also increased, so that the obtained organic transistor is a p-type organic transistor. Further, the carrier mobility of the organic transistor was calculated by the above formula (a), and as a result, the carrier mobility was 0.25 cm 2 /Vs. [Example 4: Production of 5,5'-dibromobenzo[l,2-b; 4,5-b']dithiophene] Referring to the method described in Chem. Mater, 2010, 22, 5314, - 95-201206943 The following method produces 5,5'-dibromobenzo[l,2-b:4,5-b']dithiophene β to give benzo[l,2-b; 4,5-b'] The crystal of a thiophene o.ggg is added to the reaction vessel provided with a stirrer and a thermometer to replace the inside of the vessel with nitrogen. 220 ml of dehydrogenated tetrahydrofuran was added to the vessel, and the crystal was dissolved at room temperature (about 25 ° C). After cooling the resulting solution to -7 8 ° C, a solution of t-butyllithium in hexane (concentration: 1.5 9 M, manufactured by Kanto Chemical Co., Ltd.) 8.73 ml was maintained at about -7 8 ° C for 5 minutes » at the same temperature. After the resulting mixture was stirred for 1 hour, the reaction mixture A was obtained. A solution obtained by dissolving 4.60 g of carbon tetrabromide (manufactured by Tokyo Chemical Industry Co., Ltd.) in 20 ml of dehydrated tetrahydrofuran in 10 minutes was adjusted to _78. (In the reaction mixture A, the resulting mixture was stirred for another 4 hours at the same temperature. After the resulting reaction mixture was warmed to room temperature, chloroform and water were added thereto, and the mixture was stirred well, and filtered by a filter coated with a light. The mixture was separated to remove the insoluble matter. After the obtained filtrate was separated, the obtained organic layer was dried over magnesium sulfate. After filtration, the obtained filtrate was concentrated under reduced pressure to give 5,5'-dibromobenzene represented by the following formula. [1,2-1»: 4,5-1) '] Yellow-brown crystal of dithiophene 2.018.

t> Br 'H-NMR ( δ /ppm ' CDC13 ) : 7.34 ( s > 2H ) 、8.03 (s,2H) [實施例5:製造5,5,-雙(2-硝基苯基)苯并H,2-b; 4,5-b’]二噻吩] 氮環境下將5,5,-二溴苯并[1,2-15;4,5-1)’]二噻吩1.708 、2- (4,4,5,5-四甲基-1,3,2-二氧雜環戊硼烷-2-基)硝基 201206943 苯3.65g (和光純藥製)、乙酸鈀O.llg (爾都里公司製) 、2-二環己基膦基-2’,6’-二甲氧基聯苯0.40g (爾都里公司 製)、磷酸三鉀15.55g及四氫呋喃170mL放入備有攪拌子 、溫度計及冷凝器之四口燒瓶中。氮環境下加熱至回流後 ,回流4小時。將所得之反應混合物冷卻至室溫後,減壓 下去除溶劑。將水加入濃縮殘渣後過濾。以水及甲醇洗淨 所得之固體後,減壓下乾燥,得下述式所表示之5,5’-雙( 2-硝基苯基)苯并[l,2-b; 4,5-b’]二噻吩之褐色結晶1.69g 。產率:8 0 %。t> Br 'H-NMR ( δ /ppm ' CDC13 ) : 7.34 ( s > 2H ) , 8.03 (s, 2H) [Example 5: Production of 5,5,-bis(2-nitrophenyl)benzene And H,2-b; 4,5-b']dithiophene] 5,5,-dibromobenzo[1,2-15;4,5-1)']dithiophene 1.708, 2 - (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)nitro 201206943 benzene 3.65g (manufactured by Wako Pure Chemical Industries, Ltd.), palladium acetate O.llg (made by Erdori), 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl 0.40g (manufactured by Erdori Co., Ltd.), tripotassium phosphate 15.55g and tetrahydrofuran 170mL Stirring, thermometer and condenser in a four-necked flask. After heating to reflux under a nitrogen atmosphere, it was refluxed for 4 hours. After the resulting reaction mixture was cooled to room temperature, the solvent was removed under reduced pressure. Water was added to the concentrated residue and filtered. The obtained solid was washed with water and methanol, and dried under reduced pressure to give 5,5'-bis(2-nitrophenyl)benzo[1,2-b; 4,5- represented by the following formula. b'] The brown crystal of dithiophene was 1.69 g. Yield: 80%.

•H-NMR ( δ /ppm > CDC13 ) : 7.34 ( s · 2H ) > 7.52 〜7.71(m,6H) 、7_85(d,2H) 、8.25(s,2H) [實施例6] 將5,5’-雙(2-硝基苯基)苯并[l,2-b; 4,5-b’]二噻吩 1.60 g放入備有攪拌子、溫度計及冷凝器之四口燒瓶中, 以氮取代燒瓶內部。加入亞磷酸三乙酯l〇〇mL後,氮環境 下將所得混合物加熱至回流後,回流5小時。將所得之反 應混合物冷卻至室溫後過濾。以甲醇洗淨所得之固體後, 減壓下乾燥,得下述式所表示之化合物之黃褐色結晶 0.51g。產率:37%。 -97- 201206943• H-NMR ( δ /ppm > CDC13 ) : 7.34 ( s · 2H ) > 7.52 to 7.71 (m, 6H), 7_85 (d, 2H), 8.25 (s, 2H) [Example 6] , 5'-bis(2-nitrophenyl)benzo[l,2-b; 4,5-b']dithiophene 1.60 g was placed in a four-necked flask equipped with a stirrer, a thermometer and a condenser. The inside of the flask was replaced with nitrogen. After adding l〇〇mL of triethyl phosphite, the resulting mixture was heated to reflux under a nitrogen atmosphere, and refluxed for 5 hr. The resulting reaction mixture was cooled to room temperature and filtered. The solid obtained was washed with methanol, and dried under reduced pressure to give 0.51 g of yellow brown crystals of the compound of the formula. Yield: 37%. -97- 201206943

j-NMRC <5/ppm、四氫呋喃- d8) : 7.17( txd,2H) 、7.27(txd,2H) ' 7.55 ( d > 2H ) 、7.73(d,2H)、 8.46 ( s,2H ) 、1 1 · 1 3 ( s,2H ) [實施例7] 將前述[實施例6]所得之化合物〇.43g、1-碘己烷1.49g (東京化成製)、40重量%四丁基銨氫氧化物水溶液 0.08g (東京化成製)、1〇重量%氫氧化鈉水溶液9.34g及 四氫呋喃26mL放入備有攪拌子、溫度計及冷凝器之四口 燒瓶中。氮環境下加熱所得之混合物至回流後,回流4小 時。將所得之反應混合物冷卻至室溫後,加入水與甲苯進 行分液。以硫酸鎂乾燥所得之有機層後過濾。減壓下濃縮 所得之濾液後,以使用添加容積比0.2%之三乙基胺之己 烷與甲苯的混合溶劑之矽膠柱色譜法精製所得之殘渣。將 所得之固體再結晶(溶劑:甲苯),得下述式所表示之化 合物之黃色結晶〇.13g。產率:21%。j-NMRC <5/ppm, tetrahydrofuran-d8): 7.17 (txd, 2H), 7.27 (txd, 2H) ' 7.55 ( d > 2H ) , 7.73 (d, 2H), 8.46 ( s, 2H ) , 1 1 · 1 3 ( s, 2H ) [Example 7] The compound obtained in the above [Example 6] was 〇.43 g, 1-iodohexane 1.49 g (manufactured by Tokyo Chemical Industry Co., Ltd.), 40% by weight of tetrabutylammonium hydrogen 0.08 g of an aqueous oxide solution (manufactured by Tokyo Chemical Industry Co., Ltd.), 9.34 g of a 1% by weight aqueous sodium hydroxide solution, and 26 mL of tetrahydrofuran were placed in a four-necked flask equipped with a stir bar, a thermometer, and a condenser. The resulting mixture was heated to reflux under a nitrogen atmosphere and refluxed for 4 hours. After the resulting reaction mixture was cooled to room temperature, water and toluene were added for liquid separation. The resulting organic layer was dried over magnesium sulfate and filtered. After the obtained filtrate was concentrated under reduced pressure, the obtained residue was purified by silica gel column chromatography using a solvent mixture of a mixture of hexane and toluene of triethylamine in a volume ratio of 0.2%. The obtained solid was recrystallized (solvent: toluene) to give a yellow crystal of the compound represented by the following formula: 13 g. Yield: 21%.

•H-NMRC (5/ppm、四氫呋喃- d8) : 0·91 (t,6H)、 1.28 〜1.61 (m,12H) 、1.95 〜2.10 (m,4H) 、4.79 (t• H-NMRC (5/ppm, tetrahydrofuran-d8): 0·91 (t, 6H), 1.28 to 1.61 (m, 12H), 1.95 to 2.10 (m, 4H), 4.79 (t

、7.63 ( d,2H ,4H ) 、7.19 ( t,2H ) 、7.34 ( t,2H ) -98- 201206943 )、7.71 ( d,2H)、8·71 ( s,2H ) LC-HRMS ( APPI+ ) : found 5 3 7.23 92 ( calcd. for C34H37N2S2 : 53 7.23 92 ) [薄膜及以該薄膜作爲有機半導體活性層之有機電晶體之 製造例2] 將高濃度摻雜閘電極之η-型矽基板(圖2之31)之表 面熱氧化,形成3 00nm之矽氧化膜(圖2之32 )。其次利 用光微影法依序於前述矽氧化膜上層合鉻層及金層,製作 通道長lOOym、通道寬1mm之源電極(圖2之33)與汲電 極(圖2之34)。以丙酮對所得之基板進行超音波洗淨10 分鐘後’照射臭氧UV30分鐘。接著將前述照射UV後之基 板浸漬於含有苯基乙基三氯矽烷之甲苯溶液中2分鐘,對 基板表面進行矽烷處理。 製作以0.7重量%之濃度含有前述[實施例7]製造之化 合物之二甲苯溶液後,以膜濾器過濾該二甲苯溶液調製塗 佈液。 使用旋塗法將所得之塗佈液塗佈於前述矽烷處理後之 基板之矽氧化膜、源電極及汲電極之表面上。氮環境下將 塗佈有塗佈液之面朝上之前述基板置於5 0 °C之熱板上乾燥 3 0分鐘,形成厚約25nm之薄膜(有機半導體活性層,圖2 之3 5 ),得圖2記載之有機電晶體。 將該有機電晶體之源•汲間電壓Vsd設定爲-40V,以 將閘電壓Vg由20V變化至-40V之條件,測定電晶體特性。 -99- 201206943 由該測定而得之傳達特性算出該有機電晶體之載體移動度 爲 6.1xlO-5cm2/Vs。 [實施例8], 7.63 ( d, 2H , 4H ) , 7.19 ( t, 2H ) , 7.34 ( t, 2H ) -98 - 201206943 ), 7.71 ( d, 2H), 8 · 71 ( s, 2H ) LC-HRMS ( APPI + ) : found 5 3 7.23 92 ( calcd. for C34H37N2S2 : 53 7.23 92 ) [Production Example 2 of film and organic transistor using the film as an active layer of an organic semiconductor] η-type ruthenium substrate with high concentration doping gate electrode The surface of Fig. 2, 31), was thermally oxidized to form a tantalum oxide film of 300 nm (Fig. 2, 32). Secondly, the chrome layer and the gold layer were laminated on the tantalum oxide film by photolithography, and a source electrode (33 in Fig. 2) and a tantalum electrode (Fig. 2, 34) having a channel length of 100 μm and a channel width of 1 mm were fabricated. The obtained substrate was ultrasonically washed with acetone for 10 minutes, and then irradiated with ozone for 30 minutes. Next, the substrate irradiated with UV was immersed in a toluene solution containing phenylethyltrichloromethane for 2 minutes, and the surface of the substrate was subjected to decane treatment. After preparing a xylene solution of the compound produced in the above [Example 7] at a concentration of 0.7% by weight, the xylene solution was filtered through a membrane filter to prepare a coating liquid. The obtained coating liquid was applied onto the surface of the tantalum oxide film, the source electrode and the tantalum electrode of the substrate after the decane treatment by a spin coating method. The substrate coated with the coating liquid facing up is dried on a hot plate at 50 ° C for 30 minutes in a nitrogen atmosphere to form a film having a thickness of about 25 nm (organic semiconductor active layer, 3 of FIG. 2 ) The organic transistor described in Fig. 2 is obtained. The source/turn-to-turn voltage Vsd of the organic transistor was set to -40 V, and the transistor characteristics were measured by changing the gate voltage Vg from 20 V to -40 V. -99-201206943 The carrier mobility of the organic transistor was calculated from the measurement characteristics obtained by the measurement to be 6.1 x 10 -5 cm 2 /Vs. [Embodiment 8]

將3-溴-2-碘噻吩并[3,2-b]噻吩(lOmmol)之四氫呋 喃溶液3 0mL冷卻至_78°C後,滴入η-丁基鋰(1.6M,己烷 溶液)(lOmmol ),再搅拌所得之混合物1小時。將 BujSnCl ( lOmmol )滴入所得之溶液中,攪拌所得之混合 物後,升溫至25 t再攪拌1小時。將雙(三苯基鱗基)鈀 (lmmol ) 、1,4-二溴-2,5-二碘苯(5111111〇1)加入所得之 溶液中,65 °C下攪拌所得之混合物8小時後濃縮,以矽膠 柱色譜法精製殘渣,得下述式所表示之化合物。After cooling 30 mL of a solution of 3-bromo-2-iodothieno[3,2-b]thiophene (10 mmol) in tetrahydrofuran to _78 ° C, η-butyllithium (1.6 M, hexane solution) was added dropwise. lOmmol), the resulting mixture was stirred for an additional 1 hour. BujSnCl (10 mmol) was added dropwise to the resulting solution, and the resulting mixture was stirred, and the mixture was warmed to 25 t and then stirred for 1 hour. Bis(triphenyls)palladium (1 mmol) and 1,4-dibromo-2,5-diiodobenzene (5111111〇1) were added to the resulting solution, and the resulting mixture was stirred at 65 ° C for 8 hours. After concentration, the residue was purified by silica gel column chromatography to give a compound represented by the following formula.

[實施例9] 100- 201206943[Embodiment 9] 100-201206943

氮環境下回流前述[實施例8]所得之化合物(5mmol) 、η-十二烷基胺(25 mmol )、三(二亞苄基丙酮)二鈀( 1 mmol )、鈉 tert-丁 氧化物(50mmol ) ' (±) -2,2’-雙( 二苯基膦基)-1,1’-聯萘(4mmol )及甲苯(lOOmL )之混 合物2 1小時。將所得之反應混合物冷卻至室溫後加入水, 再以氯仿萃取。以硫酸鎂乾燥所得之有機層,過濾後減壓 下濃縮所得之濾液。以矽膠柱色譜法精製所得之混合物, 得式(2-7 )所表示之化合物。藉由昇華精製式(2-7 )所 表示之化合物。 [薄膜及以該薄膜作爲有機半導體活性層之有機電晶體之 製造例3] 將形成有機半導體層用之金屬罩置於辛基三氯矽烷處 理後之200nm之附Si02熱氧化膜的摻雜矽電路板上,得覆 罩之矽電路板。其次於真空度設定爲lxl (Γ3 Pa以下之空室 內,設置該電路板與放入實施例9所得之式(2-7)所表示 之化合物的鎢製器皿中,加熱該器皿的同時將該電路板加 熱至室溫(24°C )以上l5〇°C以下,可於無金屬罩之部分 形成由式(2-7)所表示之化合物之薄膜形成的有機半導 -101 - 201206943 體層。 其次移除金屬罩後,將形成源電極及汲電極用之金屬 罩置於有機半導體層之面上,以相同之真空蒸鍍法於該有 機半導體層上形成膜厚40nm之金屬層,形成源電極及汲 電極,可製造圖1所示之有機電晶體。 [薄膜及以該薄膜作爲有機半導體活性層之有機電晶體之 製造例4] 將實施例9所得之式(2-7 )所表示之化合物溶解於〇-二甲苯中,調製式(2-7)所表示之化合物之濃度爲0.3重 量%的溶液。 將形成有機半導體層用之金屬罩置於苯乙基三氯矽烷 處理後之附Si02熱氧化膜之摻雜矽電路板上,得覆罩之矽 電路板。其次利用旋塗法將上述溶液塗佈於該電路板上, 形成由式(2-7)所表示之化合物形成之薄膜。將形成之 薄膜保溫於80t下30分鐘後,可於無金屬罩之部分形成由 式(2-7)所表示之化合物之薄膜形成的有機半導體層。 其次移除金屬罩後,將形成源電極及汲電極用之金屬 罩置於有機半導體層之面上,以相同之真空蒸鍍法於該有 機半導體層上形成膜厚40nm之金屬層,形成源電極及汲 電極,可製造圖1所示之有機電晶體。 產業上利用可能性 本發明可提供能賦予適用爲有機半導體活性層之薄膜 -102- 201206943 之多環式化合物。 【圖式簡單說明】 圖1爲,含有有機半導體層用之含有本發明之多環式 化合物的薄膜之有機電晶體之一實施形態的槪略圖。 圖2爲,含有有機半導體層用之含有本發明之多環式 化合物的薄膜之有機電晶體之另一實施形態的槪略圖。 【主要元件符號說明】 1 1 :基板 1 2 :閘電極 1 3 :閘絕緣膜 1 4 :源電極 1 5 :汲電極 16 :有機半導體層 31 :矽基板 3 2 :矽氧化膜 3 3 :源電極 3 4 :汲電極 35 :有機半導體活性層 -103-The compound (5 mmol) obtained in the above [Example 8], η-dodecylamine (25 mmol), tris(dibenzylideneacetone)dipalladium (1 mmol), sodium tert-butoxide were refluxed under a nitrogen atmosphere. (50 mmol) A mixture of '(±)-2,2'-bis(diphenylphosphino)-1,1'-binaphthyl (4 mmol) and toluene (100 mL) for 2 h. After the resulting reaction mixture was cooled to room temperature, water was added and extracted with chloroform. The obtained organic layer was dried over magnesium sulfate, filtered, and evaporated. The obtained mixture was purified by silica gel column chromatography to give a compound represented by formula (2-7). The compound represented by the sublimation formula (2-7) is refined. [Production Example 3 of Film and Organic Oxide Crystal Using the Film as Organic Semiconductor Active Layer] The doping of the SiO2 thermal oxide film of 200 nm after the treatment of the octyl trichloromethane treatment with the metal cover for forming the organic semiconductor layer On the board, you need to cover the board. Next, in a chamber in which the degree of vacuum is set to 1×1 (Γ3 Pa or less), the circuit board is placed in a tungsten vessel in which the compound represented by the formula (2-7) obtained in the embodiment 9 is placed, and the vessel is heated while the vessel is heated. The circuit board is heated to room temperature (24 ° C) or more and below 15 ° C to form an organic semiconducting -101 - 201206943 bulk layer formed of a film of the compound represented by the formula (2-7) in a portion without a metal cover. After the metal cover is removed, a metal cover for forming the source electrode and the germanium electrode is placed on the surface of the organic semiconductor layer, and a metal layer having a film thickness of 40 nm is formed on the organic semiconductor layer by the same vacuum evaporation method to form a source. The electrode and the ruthenium electrode can be used to produce the organic transistor shown in Fig. 1. [Production Example 4 of film and organic transistor using the film as an active layer of an organic semiconductor] The formula (2-7) obtained in Example 9 is represented. The compound was dissolved in hydrazine-xylene to prepare a solution having a concentration of the compound represented by the formula (2-7) of 0.3% by weight. The metal cover for forming the organic semiconductor layer was placed in the treatment with phenethyltrichloromethane. Doped with Si02 thermal oxide film On the board, the circuit board is covered with a cover. Next, the solution is applied onto the circuit board by spin coating to form a film formed of the compound represented by the formula (2-7). The formed film is kept at 80t. After the next 30 minutes, an organic semiconductor layer formed of a film of the compound represented by the formula (2-7) can be formed in a portion without a metal cover. Next, after removing the metal cover, a metal cover for the source electrode and the germanium electrode is formed. On the surface of the organic semiconductor layer, a metal layer having a thickness of 40 nm is formed on the organic semiconductor layer by the same vacuum deposition method to form a source electrode and a germanium electrode, and the organic transistor shown in Fig. 1 can be produced. UTILITY OF THE INVENTION The present invention can provide a polycyclic compound capable of imparting a film-102-201206943 suitable for an organic semiconductor active layer. [Simplified Schematic] FIG. 1 is a polycyclic ring containing the organic semiconductor layer containing the present invention. Fig. 2 is a schematic view showing an embodiment of an organic transistor of a film of a compound. Fig. 2 is another example of an organic transistor containing a film of the polycyclic compound of the present invention for an organic semiconductor layer. Outline of the form. [Description of main component symbols] 1 1 : Substrate 1 2 : Gate electrode 1 3 : Gate insulating film 1 4 : Source electrode 1 5 : Strontium electrode 16 : Organic semiconductor layer 31 : 矽 Substrate 3 2 : Antimony oxidation Film 3 3 : source electrode 3 4 : germanium electrode 35 : organic semiconductor active layer - 103-

Claims (1)

201206943 七、申請專利範園: 1.—種多環式化合物,其爲式(1)201206943 VII. Application for Patent Park: 1. A polycyclic compound, which is of formula (1) (式中,環構造c爲式(C1)所表示之苯環、式(C2) 所表示之雜[3,2-b]雜環或式(C3)所表示之苯并[i,2-b: 4,5-b’]二雜環;(wherein, the ring structure c is a benzene ring represented by the formula (C1), a hetero [3,2-b] heterocyclic ring represented by the formula (C2) or a benzo[i,2- represented by the formula (C3). b: 4,5-b'] diheterocyclic ring; (式中,P及Q獨立爲硫原子、氧原子、硒原子或碲原子 ,構成上述環之苯環可具有取代基) W、 X、Y及Z獨立爲硫原子、氧原子、硒原子、碲原子 、S〇2、(R1 b-CjR12)、(R13)-Si-(R14)或 N-(R15),且 W、 X、 Y及Z所成群中所選出之至少1個爲N-(R15); 環構造A及環構造B獨立爲可具有取代基之芳香族性碳 環或可具有取代基之芳香族性雜環,環構造C爲式(C1 )所表示之苯環,且X及Y爲N-(R15)時,環構造A及環 構造B獨立爲可具有取代基之芳香族性雜環; RM、R12、R13及R14獨立爲可具有1個以上鹵原子之烷 基或氫原子,R15獨立爲可具有1個以上鹵原子之烷基) 所表示之多環式化合物。 2.如申請專利範圍第1項之多環式化合物,其中W 、X、Y及Z獨立爲硫原子、氧原子、硒原子或N-(R15)’ -104- 201206943 且1、乂、丫及z所成群中所選出之至少1個爲n_(rm) 〇 3. 如申請專利範圍第2項之多環式化合物,其中W 、X、γ及z所成群中所選出之至少2個爲n-(r15)。 4. 如申請專利範圍第1項之多環式化合物,其中環 構造C爲’式(C2)所表示之雜[3,2_b]雜環或式(C3) 所表示之苯并[l,2-b: 4,5-b,]二雜環。 5. 如申請專利範圍第1項之多環式化合物,其中環 構造C爲式(C1)所表示之苯環,X及γ獨立爲n_(R15) ’W及Z獨立爲硫原子、氧原子或硒原子,環構造a及 環構造B獨立爲可具有取代基之芳香族性雜環。 6. 如申請專利範圍第1項之多環式化合物,其中環 構造C爲式(C1)所表示之苯環,且X及Y獨立爲硫原 子、氧原子或硒原子,W及Z獨立爲N-(R15)。 7. 如申請專利範圍第1至6項中任何一項之多環式 化合物,其中可具有取代基之芳香族性碳環爲,可具有取 代基之苯環或可具有取代基之萘環,可具有取代基之芳香 族性雜環爲,可具有取代基之噻吩環,可具有取代基之苯 并[b]噻吩環或可具有取代基之噻吩并[3,2-b]噻吩環。 8. 如申請專利範圍第4項之多環式化合物’其中環 構造C爲噻吩并[b]噻吩環,可具有取代基之苯并[l,2-b: 4,5-b’]二噻吩環或可具有取代基之苯并[l,2-b: 4,5-b’]二 呋喃環。 9. 如申請專利範圍第4項之多環式化合物’其中環 -105- 201206943 構造C爲噻吩并[3,2-b]噻吩環或無取代之苯并[l,2-b: 4,5-b’]二噻吩環。 10.如申請專利範圍第4項之多環式化合物,其中W 及X中一方爲N-(r^),另—方爲硫原子、氧原子或硒原 子’ Y及Z中一方爲n-(R15),另一方爲硫原子、氧原子 或硒原子。 1 1 .如申請專利範圍第1 〇項之多環式化合物,其中 X爲N-(R15),W爲硫原子,γ爲n-(R15)’ Z爲硫原子。 12_如申請專利範圍第1〇項之多環式化合物,其中 W爲N-(R15),X爲硫原子,z爲N-(R15)’ Y爲硫原子。 】3.如申請專利範圍第5項之多環式化合物,其中環 構造A及環構造B獨立爲可具有取代基之噻吩環。 14. 如申請專利範圍第5項之多環式化合物,其中X 及Y爲相同之N-(R15),W及Z爲硫原子。 15. 如申請專利範圍第6項之多環式化合物,其中環 構造A及環構造B獨立爲可具有取代基之苯環、可具有 取代基之萘環或可具有取代基之噻吩環。 16. 如申請專利範圍第6項之多環式化合物,其中w 及Z爲相同之N-(R15),X及Y雙方爲硫原子或氧原子。 I7· —種薄膜,其爲含有如申請專利範圍第1至16 項中任何一項之多環式化合物。 1 8 · —種薄膜,其爲僅由如申請專利範圍第1至i 6 項中任何一項之多環式化合物形成。 1 9. 一種有機電晶體,其爲含有如申請專利範圍第 -106- 201206943 17項之 20. 1 8項之: 2 1. 第19或 I膜。 一種有機電晶體,其爲含有如申請專利範圍第 i膜。 一種有機半導體裝置,其爲含有如申請專利範圍 20項之有機電晶體。 107- •βιί(wherein P and Q are independently a sulfur atom, an oxygen atom, a selenium atom or a ruthenium atom, and the benzene ring constituting the above ring may have a substituent) W, X, Y and Z are independently a sulfur atom, an oxygen atom, a selenium atom, Helium atom, S〇2, (R1 b-CjR12), (R13)-Si-(R14) or N-(R15), and at least one selected from the group consisting of W, X, Y and Z is N -(R15); Ring structure A and ring structure B are independently an aromatic carbocyclic ring which may have a substituent or an aromatic hetero ring which may have a substituent, and ring structure C is a benzene ring represented by formula (C1), When X and Y are N-(R15), the ring structure A and the ring structure B are independently an aromatic hetero ring which may have a substituent; and RM, R12, R13 and R14 are independently an alkane having one or more halogen atoms. A polycyclic compound represented by a group or a hydrogen atom, and R15 is independently an alkyl group which may have one or more halogen atoms. 2. A polycyclic compound as claimed in claim 1, wherein W, X, Y and Z are independently a sulfur atom, an oxygen atom, a selenium atom or N-(R15)'-104-201206943 and 1, 乂, 丫And at least one selected from the group consisting of z and n_(rm) 〇3. The polycyclic compound of claim 2, wherein at least 2 of the groups selected by W, X, γ, and z are selected. One is n-(r15). 4. The polycyclic compound of claim 1, wherein the ring structure C is a heterocyclic [3,2_b] heterocyclic ring represented by the formula (C2) or a benzo[1,2 represented by the formula (C3). -b: 4,5-b,] diheterocyclic. 5. The polycyclic compound of claim 1, wherein ring structure C is a benzene ring represented by formula (C1), X and γ are independently n_(R15) 'W and Z is independently a sulfur atom or an oxygen atom. Or a selenium atom, a ring structure a and a ring structure B are independently an aromatic hetero ring which may have a substituent. 6. The polycyclic compound of claim 1, wherein ring structure C is a benzene ring represented by formula (C1), and X and Y are independently a sulfur atom, an oxygen atom or a selenium atom, and W and Z are independently N-(R15). 7. The polycyclic compound according to any one of claims 1 to 6, wherein the aromatic carbocyclic ring which may have a substituent is a benzene ring which may have a substituent or a naphthalene ring which may have a substituent. The aromatic heterocyclic ring which may have a substituent is a thiophene ring which may have a substituent, a benzo[b]thiophene ring which may have a substituent or a thieno[3,2-b]thiophene ring which may have a substituent. 8. The polycyclic compound of claim 4, wherein ring structure C is a thieno[b]thiophene ring, a benzo[l,2-b:4,5-b']di which may have a substituent A thiophene ring or a benzo[l,2-b:4,5-b']difuran ring which may have a substituent. 9. The polycyclic compound of claim 4, wherein ring -105-201206943, structure C is a thieno[3,2-b]thiophene ring or an unsubstituted benzo[l,2-b:4, 5-b']dithiophene ring. 10. The polycyclic compound of claim 4, wherein one of W and X is N-(r^), and the other is a sulfur atom, an oxygen atom or a selenium atom. One of Y and Z is n- (R15), the other side is a sulfur atom, an oxygen atom or a selenium atom. A polycyclic compound according to the first aspect of the invention, wherein X is N-(R15), W is a sulfur atom, and γ is n-(R15)' Z is a sulfur atom. A polycyclic compound according to the first aspect of the invention, wherein W is N-(R15), X is a sulfur atom, and z is N-(R15)'Y is a sulfur atom. 3. The polycyclic compound of claim 5, wherein the ring structure A and the ring structure B are independently a thiophene ring which may have a substituent. 14. The polycyclic compound of claim 5, wherein X and Y are the same N-(R15), and W and Z are sulfur atoms. 15. The polycyclic compound of claim 6, wherein the ring structure A and the ring structure B are independently a benzene ring which may have a substituent, a naphthalene ring which may have a substituent or a thiophene ring which may have a substituent. 16. The polycyclic compound of claim 6, wherein w and Z are the same N-(R15), and both X and Y are a sulfur atom or an oxygen atom. A film comprising a polycyclic compound according to any one of claims 1 to 16 of the patent application. A film formed of only a polycyclic compound as disclosed in any one of claims 1 to 6 of the patent application. 1 9. An organic transistor comprising: 20.18 of the scope of the patent application No. -106-201206943: 2 1. The film of the 19th or the I. An organic transistor comprising a film as described in the patent application. An organic semiconductor device comprising an organic transistor as claimed in claim 20. 107- •βιί
TW100107267A 2010-03-05 2011-03-03 Polycyclic compound TW201206943A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010048796 2010-03-05
JP2010048797 2010-03-05
JP2010048798 2010-03-05

Publications (1)

Publication Number Publication Date
TW201206943A true TW201206943A (en) 2012-02-16

Family

ID=44542393

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100107267A TW201206943A (en) 2010-03-05 2011-03-03 Polycyclic compound

Country Status (3)

Country Link
JP (1) JP2011201874A (en)
TW (1) TW201206943A (en)
WO (1) WO2011108765A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109400624A (en) * 2018-12-03 2019-03-01 河南大学 Asymmetric four thiophene isomer of benzo and its preparation method and application

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150016255A (en) * 2012-04-25 2015-02-11 메르크 파텐트 게엠베하 Conjugated polymers
WO2013159863A1 (en) 2012-04-25 2013-10-31 Merck Patent Gmbh Conjugated polymers
JP6085675B2 (en) 2012-07-02 2017-02-22 メルク パテント ゲーエムベーハー Conjugated polymer
WO2015078551A1 (en) * 2013-11-28 2015-06-04 Merck Patent Gmbh Novel polycyclic polymer comprising thiophene units, a method of producing and uses of such polymer
CN105315298B (en) * 2014-08-04 2017-10-10 中国科学院化学研究所 A D A conjugated molecules and its preparation method and application based on seven and condensed ring unit
CN105838104B (en) * 2016-03-28 2017-11-10 大连理工大学 A kind of bithiophene and pyrroles's quinoid structure compound and preparation method thereof
EP3501695A1 (en) 2017-12-22 2019-06-26 Evonik Degussa GmbH Device for the layered production of three-dimensional objects and process
CN108987470B (en) * 2018-07-16 2021-01-01 华南理工大学 Thin film transistor, display panel and manufacturing method of thin film transistor
CN110818725B (en) * 2019-10-30 2022-06-14 华南理工大学 Conjugated micromolecule based on multi-nitrogen heterocyclic ring and application of conjugated micromolecule in organic photoelectric device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5499422B2 (en) * 2006-06-28 2014-05-21 コニカミノルタ株式会社 Organic semiconductor material, organic semiconductor film, organic thin film transistor, and organic thin film transistor manufacturing method
US8138355B2 (en) * 2006-08-28 2012-03-20 Tosoh Corporation Heteroacene derivative, tetrahaloterphenyl derivative, and processes for producing the same
JP5166816B2 (en) * 2007-10-15 2013-03-21 山本化成株式会社 Organic transistor
TW201016706A (en) * 2008-09-08 2010-05-01 Sumitomo Chemical Co Novel compound and organic semiconductor material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109400624A (en) * 2018-12-03 2019-03-01 河南大学 Asymmetric four thiophene isomer of benzo and its preparation method and application

Also Published As

Publication number Publication date
JP2011201874A (en) 2011-10-13
WO2011108765A1 (en) 2011-09-09

Similar Documents

Publication Publication Date Title
TW201206943A (en) Polycyclic compound
JP6021922B2 (en) COMPOUNDS WITH SEMICONDUCTOR PROPERTIES, AND RELATED COMPOSITIONS AND DEVICES
KR20110065511A (en) Novel compound and organic semiconductor material
TWI588150B (en) Heterocyclic compound and use thereof
TW201829410A (en) Organic thin-film transistor, organic semiconductor film, compound, organic-thin-film-transistor composition, and organic-thin-film-transistor manufacturing method
TW200940519A (en) Organic semiconductor material
TWI549327B (en) Organic field effect transistor and organic semiconductor material
JP2012206953A (en) Dithienobenzodithiophene derivative, and organic thin-film transistor using the same
JP2013220996A (en) Dithienobenzodithiophene derivative, solution for drop-casting film production, and organic semiconductor layer
JP2014110347A (en) Material for formation of organic semiconductor layer
JP2012206989A (en) Soluble heteroacene compound, thin film containing the same, and organic transistor
TW201238971A (en) Dinaphtho[2,3-a:2',3'-h]phenazines and their use as organic semiconductors
JP6252032B2 (en) Benzodifuran derivatives and organic thin film transistors
JP2018008885A (en) Heteroacene derivative, organic semiconductor layer, and organic thin film transistor
JP5637985B2 (en) Diazaborol compound and field effect transistor containing the same
JP6421429B2 (en) Heteroacene derivative, organic semiconductor layer, and organic thin film transistor
JP6364876B2 (en) Heteroacene derivative, organic semiconductor layer, and organic thin film transistor
JP6399956B2 (en) Heteroacene derivative, method for producing the same, organic semiconductor layer, and organic thin film transistor
JP2018168149A (en) Diimidazolobenzodithiophene compound, method for producing the same and transistor element
KR102114805B1 (en) Organic semiconductor material for organic transistor, and organic transistor element
JP6686559B2 (en) Heteroacene derivative, organic semiconductor layer, and organic thin film transistor
JP2018043947A (en) Heteroacene derivative, organic semiconductor layer, and organic thin-film transistor
WO2012111533A1 (en) Compound for organic transistor
JP2018035110A (en) Heteroacene derivative, organic semiconductor layer, and organic thin film transistor
WO2012096360A1 (en) Substituted benzochalcogenoacene compound