TW201203587A - High photoelectric conversion efficiency laminated type solar cell and manufacturing method thereof - Google Patents

Abstract

A high photoelectric conversion efficiency laminated type solar cell and a manufacturing method thereof are provided. A first transparent substrate is provided. A first electrode is formed on the first transparent substrate. At least one stacked semiconductor structure is formed on the first electrode, wherein each stacked semiconductor structure includes a p-type semiconductor layer, an intrinsic layer and an n-type semiconductor layer. The intrinsic layer is between the p-type semiconductor layer and the n-type semiconductor layer. A second electrode is formed on the stacked semiconductor structure. A second transparent substrate is provided. An infrared light conversion layer for converting an infrared light to a visible light is formed on the second transparent substrate. An adhesive layer is formed on the infrared light conversion layer and/or the second electrode. The first transparent substrate and the second transparent substrate are laminated.

Description

201203587

DC/I VI. Description of the Invention: [Technical Field] The present invention relates to a solar cell and a method of manufacturing the same, and in particular to a high photoelectric conversion efficiency (photoelectric eoiwei*si〇n efficiency 'PCE) Press-fit solar cell and method of manufacturing the same. [Prior Art] Solar energy is a clean, pollution-free and inexhaustible source of energy. It has been the focus of attention in addressing the current pollution and shortages facing petrochemical energy. Since solar cells can directly convert solar energy into electrical energy, it has become a very important research topic at present. Silicon-based solar cells are a common type of solar cell in the industry. The principle of a ruthenium-based solar cell is to bond a P-type semiconductor to an n-type semiconductor to form a Ρ·η junction. When sunlight strikes a semiconductor having this ρ_η structure, the energy provided by the photons excites the electrons in the semiconductor to produce an electron-hole pair. Both electrons and holes are affected by built-in potentials, causing the holes to move in the direction of the electric field and the electrons moving in the opposite direction. If the solar cell is connected to a load by a wire, a loop can be formed and current can flow through the load, which is the principle of solar cell power generation. With the rise of environmental awareness, the concept of energy conservation and carbon reduction has gradually been emphasized by the audience. The development and utilization of the renewable source has become the focus of active development in all countries of the world. Therefore, the key issue of solar cells is the improvement of their photoelectric conversion efficiency. And the increase in the photoelectric conversion efficiency of solar cells means that 201203587, the competitiveness of products is improved. SUMMARY OF THE INVENTION The present invention provides a method for manufacturing a solar cell with high photoelectric conversion efficiency, which can rapidly produce a solar cell having a high light f conversion efficiency without changing the original solar cell process. The present invention further provides a high-photoelectric conversion efficiency of >1 combined solar energy, which can convert visible light that cannot be utilized by solar cells into visible light that can be utilized by solar cells to improve photoelectric conversion efficiency. The present invention proposes a method of manufacturing a press-fit type solar cell having high photoelectric conversion efficiency by first providing a first transparent substrate. Then, a first electrode is formed on the first transparent substrate. Next, at least one stacked semiconductor structure is formed on the first electrode, wherein each stacked semiconductor structure comprises a p-type semiconductor layer, an intrinsic layer and an n-type semiconductor layer, and the intrinsic layer is located in the germanium-type semiconductor layer and the !! type Between the semiconductor layers. A second electrode is formed on the stacked semiconductor structure. A second transparent substrate is then provided. Subsequently, an infrared hght conversion layer is formed on the second transparent substrate, and the infrared light conversion layer is used to convert the infrared light into visible light. Next, an adhesive layer is formed on the infrared light conversion layer and/or the second electrode. Thereafter, the first transparent substrate and the second transparent substrate are combined. The method for producing a press-fit type solar cell having high photoelectric conversion efficiency according to an embodiment of the present invention is a material of the above-mentioned infrared light conversion layer, for example, a rare earth element. Press-fit type of photoelectric conversion efficiency according to an embodiment of the present invention

Oc/I 201203587 = method for producing a battery, the rare earth element described above is, for example, a mineral system (La), a method for producing a high photoelectric conversion efficiency according to an embodiment of the present invention, a method for producing a moon-shaped battery, wherein the visible light is, for example, Green Light or Blue Green The present invention further proposes a high photoelectric conversion efficiency battery cell first transparent substrate, a second transparent substrate, a first electrode, a at least a semiconductor structure, and an infrared light transfer layer. The second transparent substrate is disposed on the first transparent substrate.筮 Ray between the transparent substrates. The second electrode is disposed between the first electrode and the second transparent substrate. Stacking semi-lean: and :: between the electrodes, where the stack::= conductor layer, the intrinsic layer and ηCaixian County, and the intrinsic layer ^ between the bulk layer and the n-type semiconductor layer. The infrared light conversion layer is disposed between the second transparent substrate and the second electrode for converting infrared light into a visible light layer and disposed between the infrared light conversion layer and the second electrode. The material of the above-mentioned infrared light conversion layer of the above-mentioned infrared light conversion layer according to the high photoelectric conversion efficiency according to the embodiment of the present invention is, for example, a rare earth element.

The indentation solar cell having high photoelectric conversion efficiency as described in the present invention is, for example, a rare earth element. QI according to the present invention, a high-light conversion efficiency of a laminated solar cell, wherein the visible light is, for example, green light or blue, according to the high photoelectric conversion efficiency of the solar cell of the present invention, the first electrode and The materials of the second electrode are each for example 201203587

, a "f.doc/I ^ t A > ib ^ (transparent conductive oxide » TCO) 压 solar inventive embodiment of the high photoelectric conversion efficiency of the press-type solar cell, the above-mentioned p-type semiconductor layer, layer Each of the materials is, for example, a non-four or micro (four) intrinsic layer" type 11 + conductor

The above-mentioned 'the hairpin separately manufactures a solar cell having a transparent light-converting layer and a well-known solar cell, and then presses the adhesive layer to press-fit it, so in the process of the present-compression type solar cell, There is no need to change the original solar cell process, so it will not lead to an increase in production costs. In addition, since the transparent substrate having the infrared light conversion layer and the well-known domain (four) pool are manufactured separately, it is possible to carry out the well-known solar battery without the need of the actual demand. In addition, for the press-fit solar cell of the present invention, when the sunlight enters the solar cell from the second electrode side, the infrared light conversion layer converts the infrared light in the sunlight into the forest layer. Therefore, the photoelectric conversion efficiency of the solar cell can be greatly improved. In addition, since the infrared light in the sunlight irradiated to the type 4 solar cell of the present invention is converted into visible light, it is possible to absorb the effect of the infrared light caused by the large amount of infrared light, and to feed the high solar cell. Furthermore, if the infrared light exchange or the blue-green mixed light of the solar tissue of the press-fit type solar cell of the present invention is used, the pressed type Hongqi Ke of the invention is applied to require more green light or mixed light. Agriculture or flower industry, (10) cultivation of crops and flowers. In order to make the above-mentioned features and superior functions of the present invention more expensive, the following is a specific example of 201203587, and is described in detail below with reference to the accompanying drawings. [Embodiment] FIG. 1A to FIG. 1C are diagrams according to an embodiment of the present invention. A cross-sectional view of the manufacturing process of a press-fit solar cell with high photoelectric conversion efficiency. First, please refer to Fig. 1 Α ' to provide a transparent substrate 1 〇〇. The material of the transparent substrate 1 is, for example, glass. Then, the material for forming the electrode 1 〇 2 〇 electrode 102 on the transparent substrate 1 is, for example, a transparent conductive oxide. The above transparent conductive oxide may be indium tin oxide (ITO), oxidized zinc (Α1 doped ZnO ‘AZO), indium zinc oxide (IZO) or other transparent conductive material. The method of forming the electrode 1〇2 is, for example, sputtering, chemical vapor deposition (CVD), or vapor deposition (evaporatix). Next, a stacked semiconductor structure 104 is formed on the electrode 1〇2. In the present embodiment, the stacked semiconductor structure 1?4 includes a p-type semiconductor layer 104a, an intrinsic layer i?4b and an n-type semiconductor layer 104c. In detail, the method of forming the stacked semiconductor structure 1 〇 4 is, for example, a material for forming a p-type semiconductor layer 1 〇 4 γ 型 type semiconductor 1 〇 4a on the electrode 102, for example, an amorphous germanium or a microcrystalline germanium, and the p-type semiconductor layer 1 The material doped in the crucible 4a is, for example, a group selected from the group IIIA elements of the periodic table, which may be boron (B), aluminum (Al), gallium (Ga), indium (In) or antimony (T1). . Then, an intrinsic layer 1〇4b is formed on the germanium-type semiconductor layer 10a. The essential layer l〇4b is used as a main area for light-generating electrons. The material of the f layer 1Q4b is, for example, an undoped amorphous germanium or microcrystalline germanium. Thereafter, a material of the n-type semiconductor layer 104c^n-type semiconductor layer 1〇牝 is formed on the intrinsic layer 1 such as 201203587

· wUoc/I is not, dream or microcrystalline, and the material doped in the n-type semiconductor layer, for example, is selected from the group of VA elements in the periodic table of τ, which may be phosphorus (P), Arsenic (As), antimony (Sb) or antimony (Bi). After the stacked semiconductor structure JQ4 is formed, the electrodes 1〇6 are formed on the interlayer semiconductor structure 1〇4. The material of the electrode 1〇6 is, for example, a transparent conductive oxide. The above transparent conductive oxide may be indium tin oxide, aluminum zinc oxide, indium zinc oxide or other transparent conductive material. % In the present embodiment, the stacked semiconductor structure 104 is composed of a p-type semiconductor layer 1?4a, an intrinsic layer 1 and an 11-type semiconductor layer 104c which are sequentially formed on the electrode 102. In other embodiments, the n-type semiconductor layer i〇4c, the intrinsic layer 1〇4b, and the p-type semiconductor layer 110a may be sequentially formed on the electrode 1〇2 to form a stacked semiconductor structure. In addition, in this embodiment, there is only one stacked semiconductor structure between the electrode 1〇2 and the electrode 1〇6, and in other embodiments, the order between the electrode 102 and the electrode 106 can also be formed according to actual needs. Stacked multiple stacked semiconductor structures. Further, the step of forming the electrode 102, stacking the semiconductor structure 104 and the electrode 106 on the transparent substrate 100 is a process step of a generally known solar cell. That is to say, the structure in Fig. 1 is a generally well-known solar cell, which can be manufactured by existing equipment without using additional equipment and without changing the current process steps. Next, referring to FIG. 1B, a transparent substrate 1 8 is provided. The material of the transparent substrate 108 is, for example, glass. Then, an infrared light conversion layer 10 is formed on the transparent substrate 1〇8. Infrared light conversion 201203587·/! The forming method for converting infrared light into visible light and infrared light conversion layer no is, for example, a sputtering method, a chemical vapor deposition method, or a vapor deposition method. The material of the infrared light conversion layer 110 is, for example, a rare earth element such as a skeleton element. Thereafter, an adhesive layer 112 is formed on the infrared light conversion layer 110. The material of the adhesive layer 112 is, for example, ethylene vinyl acetate (EVA). Thereafter, referring to FIG. 1C, the transparent substrate 100 and the transparent substrate 1〇8 are pressed in such a manner that the adhesive layer 112 faces the electrode 106 to form a press-fit solar cell 114. In the present embodiment, the adhesive layer Π 2 is formed on the infrared light conversion layer Π0. Of course, in other embodiments, the adhesive layer 112 may be formed on the electrode 106, and then the transparent substrate 1 〇〇 and the transparent substrate 1 〇 8 may be pressed in such a manner that the adhesive layer 112 faces the infrared light conversion layer 11 ,. A press-fit type solar cell 114 is formed. Alternatively, the adhesive layer 112 may be formed on the infrared light conversion layer 11A and the electrode 106 at the same time.

As described above, the present invention separately manufactures a transparent substrate 1 〇 8 having an infrared light conversion layer 11 与 and a generally known solar cell (structure as shown in FIG. 1A) in the process of manufacturing the laminated solar cell 114, The two are then pressed together by the adhesive layer 112. That is to say, in the process paper of the press-fit type solar cell of the present invention, it is necessary to change the original solar cell process, and thus the production cost is not increased. In addition, since the transparent substrate 1 8 having the infrared light conversion layer 110 and the solar cell in FIG. 1A are manufactured in (4), the transparent light having the infrared light conversion layer 110 can be manufactured in different places depending on actual needs. Substrate 108 and Figure 1A 201203587

v / π f · (Solar cell in 1og/I. Hereinafter, the solar cell of the present invention will be described by taking the press-fit type solar cell 114 of Fig. 1C as an example. Referring to Fig. 1C, the press-fit type solar cell 114 includes The transparent substrate 100, the transparent substrate 108, the electrode 102, the electrode 1〇6, the stacked semiconductor structure 104, the infrared light conversion layer 110, and the adhesive layer 112, the transparent substrate 1〇8 are disposed on the transparent substrate 100. The electrodes 1〇2 are disposed in a transparent The substrate 1 is disposed between the φ transparent substrate 108. The electrode 106 is disposed between the electrode 102 and the transparent substrate 108. The stacked semiconductor structure 104 is disposed between the electrode 1〇2 and the electrode 1〇6. The stacked semiconductor structure 104 includes a p-type Between the semi-1Q4 & 胄 conductor layer 10 乜 and the !1 type semiconductor layer, an infrared light conversion layer 11 〇 is disposed between the transparent substrate 108 and the electrode 106 for converting infrared light into visible light. It is disposed between the infrared light conversion layer and the electrode mg. For a general solar cell, when the sunlight is irradiated to the solar cell, the intrinsic layer made of amorphous germanium or microcrystalline germanium cannot be effectively absorbed. Infrared light in sunlight (which accounts for about 5% of sunlight), so infrared light can pass directly through the solar cell, making the photoelectric conversion efficiency of the solar cell not greatly improved. However, for pressing The type solar cell 114 says that when sunlight passes through the transparent substrate 1 〇 8 and is irradiated to the infrared light conversion layer 110, the infrared light conversion | 11 〇 can convert the infrared light in the sunlight that cannot be utilized by the solar cell into Visible light used by solar cells. Since the intrinsic layer 104b has a better 11 oq/1 for visible light, 201203587 :=! When the infrared light in the sunlight is converted by the infrared light conversion layer no 2 The solar cell emits the amount of visible light of the present (4) secret, thereby increasing the photoelectric conversion efficiency of the pressure η i solar cell 114. For the visible recording relative to other colors, if the M-type solar ray, the essence layer of 14 is The amorphous dream is a material, and the amorphous stone material has a good absorption for the green light and the blue light light (the best absorption rate for the lining light), so the rare earth element in the infrared light conversion layer m can be adjusted. $ The type and group of aircraft to convert the sunlight outside the solar towel into green light or blue-green mixed light 'saki-step to enhance the photoelectric conversion efficiency of the laminated solar cell 114. In particular, the infrared light conversion layer After the converted green or blue-green mixed light passes through the press-fit type solar cell 114, the unabsorbed portion can be further utilized. For example, the infrared light conversion layer 110 is converted and formed without being absorbed. The green or blue-green mixed light can be mixed with the unabsorbed visible light that originally passed through the press-fit solar cell 114 to produce different colors of light. Therefore, if the press-fit solar cell 114 is used in architectural design, It is adjusted according to actual needs to present light different from white light. In addition, if the press-fit solar cell crucible 4 is applied to an agricultural or flower industry that requires more green light or blue-green mixed light, it can contribute to crop and flower cultivation. Furthermore, in the present embodiment, since the infrared light in the sunlight irradiated to the press-type solar cell 114 has been converted into visible light, the heat accumulation effect generated when the infrared light is irradiated to the solar cell can be largely 12 201203587 -7^^ /^iwf.doc/1 The reduction allows the press-fit solar cell 114 to remain at the same temperature as the surrounding environment after being exposed to sunlight. In addition, since the heat accumulation effect has been greatly reduced, the problem of lowering the photoelectric conversion efficiency due to the heat accumulation effect can be further avoided, thereby achieving the purpose of improving the performance of the solar cell. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1C are cross-sectional views showing a manufacturing process of a high-photoelectric conversion efficiency press-fit solar cell according to an embodiment of the present invention. [Description of main component symbols] 100, 108: transparent substrate 102, 106: electrode • 104: stacked semiconductor structure 104a: p-type semiconductor layer l〇4b: intrinsic layer l〇4c: n-type semiconductor layer 110: infrared light Conversion layer 112: adhesive layer 114: press-fit solar cell 13

Claims (1)

201203587 VII. Patent application scope: L A method for pressing a solar cell with high photoelectric conversion efficiency, comprising: k for a first transparent substrate; forming a first electrode on the first transparent substrate; Forming at least one stacked semiconductor structure on the first electrode, wherein each of the stacked semiconductor structures includes a -p-type semiconductor layer, an intrinsic layer and a dozen conductors, and the intrinsic layer is located thereon? Forming a second electrode on the at least one stacked semiconductor structure; providing a second transparent substrate; forming an infrared light conversion layer on the second transparent substrate, the infrared conversion layer for The infrared light is converted into a visible light; a layer is formed on the infrared light conversion layer and/or the second electrode, and the first transparent substrate and the second transparent substrate are pressed. 2. The method for producing a high photoelectric conversion effect according to the item, wherein the material of the infrared light conversion layer is a method for manufacturing a high-photoelectric conversion efficiency solar cell according to the second aspect of the invention, wherein the rare earth element Includes lanthanides. 4. The material of the ink-integrated solar cell of the high photoelectric conversion efficiency as described in the first paragraph of the patent application. The visible light includes green light or 201203587, , , ^vT, f.doc/I blue-green mixed light. 5. A high-photoelectric conversion efficiency press-fit solar cell, comprising: a first transparent substrate; a second transparent substrate disposed on the first transparent substrate; a first electrode disposed on the first transparent substrate a second electrode disposed between the first electrode and the second transparent substrate; at least one stacked semiconductor structure disposed between the first electrode and the second electrode, wherein Each stacked semiconductor structure includes a p-type semiconductor layer, an intrinsic layer and an n-type semiconductor layer, and the intrinsic layer is between the p-type semiconductor layer and the n-type semiconductor layer; an infrared light conversion layer is disposed on the The second transparent substrate and the second electrode are configured to convert infrared light into a visible light; and an adhesive layer is disposed between the infrared light conversion layer and the second electrode. 6. The press-fit type solar cell of high photoelectric conversion efficiency according to claim 5, wherein the material of the infrared light conversion layer comprises a rare earth element. 7. The press-fit type solar cell of high photoelectric conversion efficiency according to claim 6, wherein the rare earth element comprises a lanthanide element. 8. A press-fit type solar cell having high photoelectric conversion efficiency as described in claim 5, wherein the visible light comprises green light or blue-green mixed light. 9. The 15 201203587 press-fit solar cell according to claim 5, wherein the material of the first electrode and the second electrode each comprise a transparent conductive oxide. 10. The high-photoelectric conversion efficiency press-type solar cell according to claim 5, wherein the p-type semiconductor layer, the intrinsic layer and the material of the n-type semiconductor layer each comprise an amorphous germanium or a microcrystalline germanium. . 16