201201280 六、發明說明： 【發明所屬之技術領域】 本發明是一種二極體製造方法，特別是指一種在溝槽中 形成切割道，制切割道對基板進行切割時不損壞玻璃保護 層之溝槽式二極體製造方法。 【先前技術】 凊參考圖2A與圖2B’為一種習用二極體製造方法， # 於進行複數二極體切割之前，首先根據二極體的定義位 置’在-基10㈣出縱向與橫向垂直交錯之複數溝槽 101 ’再請參考2C所示，為了保護該溝槽1〇1之側壁不 又水氣、重金屬汙染與離子性汙染，必須在該溝槽，〇彳之 側壁附予保護層，該保護層之製作方法將配合圖式詳細介 紹如下。 清參考圖2D所示，在基板1〇之溝槽1〇1中填充保護 膠層20，其中該保護膠層2〇為玻璃粉與聚酯之混合物。 _ 請參考圖2E所示，接著對該基板1Q加以升溫洪烤保 f膠層20 ’燒除保護膠層2〇内之聚酷成份留下玻璃粉，再 提高加熱溫度，令坡璃粉因高溫熔融而形成一玻璃保護層 2〇2。當形成玻璃保護層2〇2後，係採背切方式，自該基板 1〇底部開始切割，切割過程止於該基板1〇與玻璃保護層 202之交接處。 4參考圖2F所示，再以外力方式將該玻璃保護層2〇2 沿其切割處折斷以形成二極體，由於該玻璃保護層2〇2係 由機械式外力折斷，不僅容易導致該玻璃保護層202的斷 .201201280 Z生不規則破裂’該破璃保制202斷裂面也容易產生 裂痕203 ’因玻璃係為—種非晶結構的材質，玻璃裂痕 之形成方向係、無法預估與控制，甚至在玻璃保護層202 與基板1G之間將形成縫隙204。若二極體尺寸越大，所產 生的麵裂痕203與縫隙2()4問題將更明顯，該玻璃裂痕 2〇^與鏠隙2G4將成為水氣、離子或重金屬污染該基板a 之管道，降低二極體良率。201201280 VI. Description of the Invention: [Technical Field] The present invention is a method for manufacturing a diode, in particular, a method of forming a dicing street in a groove, and cutting the substrate without cutting the groove of the glass protective layer Trench diode manufacturing method. [Prior Art] Referring to FIG. 2A and FIG. 2B' as a conventional diode manufacturing method, # before performing the complex diode cutting, firstly according to the defined position of the diode 'in the base 10 (four), the vertical and horizontal directions are vertical. Interleaved multiple trenches 101' Please refer to 2C again. In order to protect the sidewalls of the trenches 1〇1 from moisture, heavy metal pollution and ionic contamination, a protective layer must be attached to the trenches and the sidewalls of the trenches. The manufacturing method of the protective layer will be described in detail as follows. Referring to Fig. 2D, a protective layer 20 is filled in the trench 1〇1 of the substrate 1 , wherein the protective layer 2 is a mixture of glass frit and polyester. _ Please refer to FIG. 2E, and then the substrate 1Q is heated and baked to prevent the adhesive layer 20' from burning off the protective layer 2, leaving the glass powder, and then increasing the heating temperature to make the slag powder The high temperature melts to form a glass protective layer 2〇2. After the glass protective layer 2〇2 is formed, the back-cutting method is adopted, and the cutting is started from the bottom of the substrate, and the cutting process is terminated at the intersection of the substrate 1〇 and the glass protective layer 202. 4, as shown in FIG. 2F, the glass protective layer 2〇2 is broken along the cutting portion thereof to form a diode, and the glass protective layer 2〇2 is broken by mechanical external force, which is not only easy to cause the glass. The damage of the protective layer 202.201201280 Z irregular cracks 'The broken surface of the broken glass 202 is also prone to cracks 203 'Because the glass system is a kind of amorphous structure material, the direction of glass crack formation is unpredictable and controllable Even a gap 204 will be formed between the glass protective layer 202 and the substrate 1G. If the size of the diode is larger, the problem of the surface crack 203 and the gap 2 () 4 will be more obvious. The glass crack 2 鏠 and the gap 2G4 will become pipes for water, ions or heavy metals to contaminate the substrate a. Reduce the yield of the diode.
為了避免該玻璃保護層2〇2在切割時所造成玻璃裂痕 〇3與縫隙2〇4,另有_種習用二極體之製作方法如圖从〜 圖3D所不’在切割時不會造成玻璃裂痕與縫隙2〇4。 如圖3A’於上述已被触刻出溝槽1〇1的基板1〇上先 塗佈一保護膠層20,該保護膠層2()為玻璃粉與聚醋之混合 物。 如圖3B ’經過黃光製程後’形成環繞於該溝槽1〇1之 保護膠層20’烘烤該保護膠層20以燒除聚酯而留下玻璃粉 201 〇 如圖3C ’再持續升溫以燒結該玻璃㈣為玻璃保護層 202,其中一切割道1〇3係形成於該溝槽1〇1中未受該玻璃 保護層202覆蓋處。 如圖3D，最後可沿該切割道103進行切割，製成二極 體，該二極體包含有二極體本體1〇a與玻璃保護層2〇2, 因利用切割道103對基板10進行切割，所以不會損壞玻璃 保護層202。 而’上述製造二極 …队 作於牡T/ 時可避免玻璃裂痕203與缝隙204,但如上述過程包^ 201201280 曝光與顯影等，耗費許多時間與材料成本 【發明内容】 有鑑於玻璃保護層破裂所導致的問題是不容忽視的， 本發明提供—種溝槽式二極體製造方法，所製出的二極體 可以避免其玻璃保護層在切割過程中碎裂，且製作方法較 容易，本發明溝槽式二極體製造方法包含以下步驟： 在一基板上蝕刻出交錯之複數溝槽； 填充保護膠層於該複數溝針，其巾料鄉 粉與聚酯之混合物； 敬喝 切割保護膠層，係對該俘讀朦展 Μ保濩膠層進行切割，使保護膠 層形成一延伸至溝槽底面的分隔道； 對該基板與升溫烘烤以燒除該仵 下玻璃令、w “ “飞保護膠層中的聚酯而留 下破璃叔，並持續升溫燒結 展甘^ 双，物便具形成一玻璃保護 層’其中，前述分隔道係形成為一切割道； 沿該切割道對該基板進行切割，以獲得二極體。 猎此’由㈣㈣道係形成於未被該該麵保護 蓋處’故切割時得以避開該玻璃 覆 護層打甘……坡璃保護層而不會導致該玻璃保 去較簡早且節省成本，省去在务 刖技術中，使用黃光製程以 先 成在溝槽側壁保護膠層的部 【實施方式】 本發明溝槽式二極體製造方法搭配圖式詳述如下 201201280 參考圖1A與圖a，於進扞 ： 复數—極體切割之前，f 先根據二極體的定義 引首 钱位置，在一基板1〇蝕刻出縱向盥橋 垂直交錯之複數溝#1ni ^ ππ興枳向 再僧101，再清參考圖1(：所示，為 101與該基板10之月^ 為該溝槽 辟T > 局°P放大圖，為了保護該溝槽101之側 壁不受水氣、重金屬、、千，九命M工卜 屬汙染與離子性汙染，必須在 之側壁附予保護層，兮徂噌廢夕制从 U1 該保邊層之製作方法將配合圖式詳細 Μ紹如下。 :參考圖1D所示’在基板1〇之溝肖1〇1中填充保護 夕層 其中該保護膠層20為玻璃粉與聚醋之混合物。 請參考圖所示，切割溝槽1〇1中的保護膠層2〇, 切割過程止於溝槽1()1之底面，使保護膠層2〇形成一延伸 至溝槽101底面的分隔道102’其中，切割保護膠層2〇的 方式可利用雷射切割或刀具切割等方式對該保護膠層2〇進 行切割’惟切割保護膠層2〇的方式不以此兩方式為限，只 要可於該保護膠層20形成一分隔道102之切割方式即可。 請參考圖1F所示，對該基板1〇加以升溫以洪烤保護 膠層20’燒除保護膠層20内之聚酯成份而留下玻璃粉，接 著再提高加熱溫度，令玻璃粉因高溫熔融而形成一玻璃保 護層202，其中如圖1E所述之分隔道1〇2形成一切割道 1〇3，且該切割道1〇3未被玻璃保護層2〇2所覆蓋。 參考圖1 G所示，沿該切割道1 03進行切割，以獲得一 完整的二極體，由於該切割道103係形成於未被該玻璃保 護層202所覆蓋處，故切割時得以避開該玻璃保護層2〇2 而不會導致該玻璃保護層202破損。 參考圖1H，當利用前述方法製作完成二極體後，該二 201201280 極體包含有二極體本體10a與玻璃保護層202，由圖1 η可 知’該二極體本體10a的侧面環繞有凹部1〇b，且該玻璃保 護層202成形於該凹部1〇b中，其中該玻璃保護層外緣2〇2a 與該二極體本體1 〇a之側邊緣1 〇c尚維持有一距離。 本發明利用簡單的製程步驟即可形成具有完整玻璃保 護層202之二極體，由於該切割道1〇3係形成於未被該玻 璃保護層202所覆蓋處’故切割時得以避開該玻璃保護層 202而不會導致該玻璃保護層2〇2發生破損、不規則斷裂 • 面、縫隙等問題，維持玻璃保護層202之完整性以提供良 好的防護效果。 【圖式簡單說明】 圖〜1G:本發明溝槽式二極體製造方法示意流程圖。 圖1H :以圖iA〜1G製法所得之二極體示意圖。 圖2A〜2F:習知二極體製法之示意流程圖。In order to avoid the glass crack 〇3 and the gap 2〇4 caused by the glass protective layer 2〇2, another method for manufacturing the conventional diode is as shown in the figure from FIG. 3D. Glass cracks and gaps 2〇4. As shown in Fig. 3A', a protective layer 20 is first coated on the substrate 1 which has been touched out of the trench 1'1, and the protective layer 2() is a mixture of glass frit and polyacetate. 3B 'after the yellow light process', the protective layer 20' surrounding the trench 1'1 is baked to bake the protective layer 20 to burn off the polyester leaving the glass frit 201 〇 as shown in FIG. 3C The temperature is raised to sinter the glass (4) to the glass protective layer 202, wherein a scribe line 1 〇 3 is formed in the trench 〇1 without being covered by the glass protective layer 202. As shown in FIG. 3D, the dicing is performed along the dicing street 103 to form a diode. The diode includes a diode body 1a and a glass protective layer 2〇2, and the substrate 10 is processed by the dicing street 103. Cutting, so the glass protective layer 202 is not damaged. And the above-mentioned manufacturing of the two poles...the team can avoid the glass crack 203 and the gap 204 when it is used for the oyster T/, but as the above process package 201201280 exposure and development, etc., it takes a lot of time and material cost [invention] In view of the glass protective layer The problem caused by the rupture is not negligible. The present invention provides a method for manufacturing a trench diode, which can prevent the glass protective layer from being chipped during the cutting process, and the manufacturing method is relatively easy. The method for manufacturing a trench diode of the present invention comprises the steps of: etching a staggered plurality of trenches on a substrate; filling a protective adhesive layer on the plurality of grooved needles, and mixing the mixture of the vegetable powder and the polyester; The protective adhesive layer is formed by cutting the captured adhesive layer to form a protective layer extending to the bottom surface of the groove; baking the substrate and heating to burn the underarm glass, w ““The polyester in the protective layer of the rubber leaves the unbridled glass, and continues to heat up and sinter, and the material forms a protective layer of glass.” The foregoing separation channel is formed as a cutting track; The dicing street cuts the substrate to obtain a diode. Hunting this 'by (4) (four) trajectory formed in the protective cover of the face is not cut off when the cutting is avoided, the glass cover layer is protected... the protective layer of the glass does not cause the glass to be kept simple and saves The cost is omitted, and the yellow light process is used to form the portion of the protective layer of the trench on the sidewall of the trench. [Embodiment] The method for fabricating the trench diode of the present invention is described in detail below. 201201280 Referring to FIG. 1A And Figure a, Yu Jinyu: Before the complex-polar body cutting, f first leads the money position according to the definition of the diode, and etches the vertical 盥 bridge vertically interlaced on a substrate 1##1ni ^ ππ兴枳Referring again to FIG. 1, and referring to FIG. 1 (shown as 101, the month of the substrate 10 and the substrate 10 is a T > enlarged view of the trench, in order to protect the sidewall of the trench 101 from moisture, Heavy metal, thousand, nine life M work is a pollution and ionic pollution, must be attached to the protective layer on the side wall, the waste 夕 system from U1 The production method of the edge layer will be detailed as follows. : Referring to FIG. 1D, 'filling the protective layer on the substrate 1 〇 肖 〇 1 〇 1 The protective adhesive layer 20 is a mixture of glass powder and polyester. Referring to the figure, the protective adhesive layer 2〇 in the trench 1〇1 is cut, and the cutting process is stopped on the bottom surface of the trench 1 ()1 to make the protective adhesive. The layer 2 is formed into a partition 102' extending to the bottom surface of the groove 101. The protective layer 2 is cut by laser cutting or cutting, etc. The manner of the layer 2 is not limited to the two methods, as long as the cutting manner of the partition 102 can be formed in the protective layer 20. Referring to FIG. 1F, the substrate 1 is heated to protect it. The adhesive layer 20' burns off the polyester component in the protective adhesive layer 20 to leave the glass frit, and then increases the heating temperature to melt the glass frit to form a glass protective layer 202, wherein the separator is as shown in FIG. 1E. 1〇2 forms a cutting lane 1〇3, and the cutting lane 1〇3 is not covered by the glass protective layer 2〇2. Referring to FIG. 1G, cutting is performed along the cutting lane 103 to obtain a complete a diode, since the scribe line 103 is formed not to be covered by the glass protective layer 202 Therefore, the glass protective layer 2〇2 can be avoided during the cutting without causing the glass protective layer 202 to be damaged. Referring to FIG. 1H, after the diode is fabricated by the foregoing method, the two 201201280 polar body includes two poles. The body body 10a and the glass protective layer 202 are known from FIG. 1 'the side surface of the diode body 10a is surrounded by a recess 1b, and the glass protective layer 202 is formed in the recess 1b, wherein the glass protective layer The outer edge 2〇2a maintains a distance from the side edge 1 〇c of the diode body 1 〇a. The present invention utilizes a simple process step to form a diode having a complete glass protective layer 202 due to the scribe line The 1〇3 system is formed not to be covered by the glass protective layer 202. Therefore, the glass protective layer 202 can be avoided without causing damage to the glass protective layer 2〇2, irregular breakage, surface, slit, etc. The problem is to maintain the integrity of the glass cover 202 to provide good protection. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1G is a schematic flow chart of a method for manufacturing a trench diode of the present invention. Figure 1H is a schematic view of a diode obtained by the method of Figures iA to 1G. 2A to 2F are schematic flow charts of a conventional two-pole system method.
圖3A〜3C :另一習知二極體製法之示意流程圖。 圖3D:以圖3A〜3C製法所得之二極體示意圖。 【主要元件符號說明】 10基板 10b凹部 1 01溝槽 103切割道 201破璃粉 1〇a二極體本體 1 〇 c側邊緣 102分隔道 20保護膠層 202破璃保護層 201201280 202a玻璃保護層外緣203玻璃裂痕 204縫隙3A to 3C are schematic flow charts of another conventional two-pole system method. Fig. 3D is a schematic view of a diode obtained by the method of Figs. 3A to 3C. [Main component symbol description] 10 substrate 10b concave portion 01 groove 103 cutting channel 201 broken glass powder 1〇a diode body 1 〇c side edge 102 separation channel 20 protective adhesive layer 202 broken glass protective layer 201201280 202a glass protective layer Outer edge 203 glass crack 204 gap
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