201200548 六、發明說明： 【發明所屬之技術領域】 概括而言，本發明传古 其是，本發明個於-軌；化學機械研㈣領域。尤 window)之化學機械研磨缺陷—體成型窗（integral 低缺陷-體成型窗之化學機發月亦有關於―種使用具有 研磨方法。 予機械研磨塾研磨基材之化學機械 【先前技術】 在製造積體電路與其他電子 導體以及介電材料沉積在半導：、 的導電、半‘ 移除。導電、半導體以及介電材·薄層可圓^ 技術沉積。現代製程常見的沉積技術包括物 =也稱為糊、化學氣相沉積法請增： 學氣相沉積法（PECVD)，以及電化學電鑛（Ecp)。強化 、，當材料層依序沉積及移除時，晶圓最上層表 不平。由於後續的半導體加工（例如金屬化）需要晶圓具有于 的表面’就需要平坦化晶圓。平坦化係用於移除非 形貌以及表面缺陷，例如粗糙的表面、結塊的材 料、S曰格損壞、到痕以及受污染層或材料。 化學機械平坦化，或化學機械研磨（CMP)為用來使基 材（例如半導體晶圓）平坦化常見的技術。在傳統的 中’晶圓係置於載體組合件並定位成與CMp設備中的研磨 塾接觸。該載體組合件對該晶圓提供可控之壓力使晶圓壓 抵研磨鲁。墊體藉由外部驅動力相對於晶圓移動（例如轉 3 94912 201200548 動）°與此同時’化學組成物（聚料’，）或其他研磨溶液被 供應於晶圓與研磨墊之間。因此，藉由塾體表面及漿料的 化學與機械作用研磨以及平坦化晶圓表面。 與化學機械研磨有關的一個問題在於決定基材何時 已經達到需要的研磨程度。決定研磨終點之原位法已被開 發出來° _枝之—使用雷射干涉法（laser lnterferomety)其中由雷射產生之光係被用於測量基材尺 寸因而，已經開發出一種具容易藉光學方法測量基材尺 寸之特徵之化學機械研.磨塾。舉例而言第5,6〇5,6〇號美 々國專，露一種研磨墊’其中，至少一部份墊體在一波長 範圍疋雷射光可穿透。在一實施例中，研磨塾包含透明窗 件於相反的不透明塾體中。該窗件可為模製研磨塾中的透 明聚合物材料之棒體或栓狀體。棒體或栓狀體可插入模製 於研磨塾（即-體成型窗）中，或可以在模製操作之後安置 於研磨墊之切除部位（即插入式窗（plug_in_place window)) ° 傳統化學機械研磨墊包括插入式窗者，研磨介質容易 從插入式窗與其餘化學機械研磨墊間的界面滲漏出。研磨 介質的滲漏會流入研磨層、中介層或底墊層，造成如研磨 層可壓縮性的區域性差異，而導致研磨缺陷增加。研磨介 質的滲漏也會透到研磨墊，並對研磨裝置造成傷宝。 傳統化學機械研磨墊包含一體成型窗者，其係因隨著 時間經過從研磨層向外凸起之窗隨著使用研磨墊造成的研 .磨缺陷（例如被研磨基材的到痕），而相對於插入式窗容易 94912 4 201200548 增加研磨缺陷。 因此，需要一種具有窗之化學機械研磨墊，其窗能減 少傳統上與插入式窗相關的滲漏問題，以及傳統上與一體 成型窗相關的研磨缺陷問題。 【發明内容】 於本發明之一態樣中，係提供一種化學機械研磨墊， 包括：研磨層，該研磨層具有研磨表面以及一體成型窗； 其中，一體成型窗一體成型於研磨層之中；其中，一體成 型窗為固化劑與以異氰酸酯封端之預聚物多元醇之聚胺曱 酉欠酉曰反應產物；其中’固化劑包含與以異氰酸酯封端之預 聚物夕元醇中所包含之未反應的NC0成份反應形成一體成 =窗之固化胺部份（m〇iety)，其中，該固化劑與該以異氰 酸酯封端之預聚物多元醇係以胺部份對未反應之NC0部份 之化學計量比為1 : 1至1 :丨.25提供；其中，一體成型窗 的孔隙率小於0· 1體積％(v〇lW ;其中，一體成型窗具有5 至2抓的壓縮變形（compression set);其中，研磨表面係 適合研磨選自磁性基材、光學基材以及半導體基材之基材。 於本發明之另一態樣中，係提供一種化學機械研磨選 自磁性基材、光學基材以及半導體基材之基材的方法，包 括：提供具有平台之化學機械研磨設備；提供至少一選自 磁性基材、光學基材以及半導體基材之基材；選擇具有研 磨層之化學機械研磨墊’其中’研磨層包含形成於其中之 一體成型窗，其中，一體成型窗具有5至25%之壓縮變形； 安置化學機械研磨墊於平台之上；以及，以研磨層的研磨 5 94912 201200548 表面研磨此至少一基材。 在本發明之另一態樣中，係提供一種化學機械研磨選 自磁性基材、光學基材以及半導體基材之基材的方法，包 括：提供具有平台之化學機械研設備；提供至少一選自磁 性基材、光學基材以及半導體基材之基材；選擇如申請專 利範圍第1項之化學機械研磨墊；安置化學機械研磨墊於 平台之上；以及’以研磨層的研磨表面研磨此至少一基材。 【實施方式] 此處及申請專利範圍所使用的“研磨介質，’ 一詞，包 3 3粒子研磨溶液及不含粒子研磨溶液（例如無研磨劑與 反應性液體研磨液）。 、 此處及申請專利範圍所使甩的“聚胺甲酸酯，，一 祠，包含（a)由（i)異氰酸酯以及（ii)多元醇（包括二元醇） 之反應所形成之聚胺甲酸酯；以及（b)由（i)異氰酸酯與（^) 夕元醇（包括二元醇）及（丨丨丨）水、胺（二胺及多元胺）或水及 胺（一胺及多元胺）之纟且合之反應所形成之聚胺曱酸醋。 本發明之化學機械研磨墊包含研磨層，該研磨層具有 研磨表面及一體成型窗;其中，一體成型窗一體成型‘研 磨層之中；其中’ 一體成型窗為固化劑與以異IL酸酿封端 之預聚物多元醇之聚胺甲酸醋反應產物，其中，固化劑含 與以異氰㈣封端之預聚物多元醇中所包含之未反應的 NC0成份反應以形成一體成型窗之固化胺部份，其中，誃 固化劑與mu㈣封敵預聚物多元醇以胺部份對未 反應之NC0成份化學計量比為i:丨至丨：ι 25提供；其中 94912 6 201200548 一體成型窗的孔隙率（p_sity)<1Q如ι%;較佳者， <0.L，更佳者，為 為請眶至<0.9祕，最佳者，為請刪 vol% ;其中，一髀忐剂介目士。 ' υο 體成型1¾具有5至25%之壓縮變形，齡伟 者’ 5至20%，更佳者，5至15%，再更佳者，5至⑽ 佳者，5至8%之壓縮變形；其中，研磨表面係適合研磨選 自磁性基材、光學基材以及半導縣材之基材。 較佳者，固化劑與以異氰酸酉旨封端之預聚物多元 以適當比例提供以給出1 : 1至1 : 1.25之腦對未反應之 NC0化學計量比’較佳者，1:1至1:115更佳者，⑴ 至1 · 1· 10。此化學計量的達成可藉由直接提供化學計量 程度之原料或間接將部份_與水特地反應或者暴露 然的濕氣。 舉例而言，以異氰酸酯封端之預聚物多元醇包括多元 醇與夕g月b芳香異氰酸酯的反應產物。適合的多元醇包 括，例如，聚醚多元醇、聚碳酸酯多元醇、聚酯多元醇、 聚己内酯多元醇、乙二醇、h 2—丙二醇、h 3—丙二醇、 1，2—丁二醇、1，3—丁二醇、2_ 甲基——丙二醇、14 —丁二醇、新戊二醇、1，5_戊二醇、3—甲基_15 一戊二 醇、1’6—己二醇、二伸乙二醇、二伸丙二醇、三伸丙二醇 及其混合物。較佳的多元醇包括聚四亞甲基醚二醇 [polytetramethylene ether glycol，PTMEG]、聚丙二醇 [PPG ]、酯系多元醇（例如己二酸乙二醇酯或己二酸丁二醇 醋）、其共聚物及其混合物。適合的多官能芳香異氰酸g旨包 94912 7 201200548 22,4-曱笨二異氰酸酉旨、2,6_甲苯二異氛酸醋、4,4，一二 苯甲烧二異氰酸醋、蔡]，5_二異氰酸醋、二異滅聯甲笨 胺、對伸笨基二異氰酸醋、伸二曱苯基二異氣酸醋及其混 合物。較佳者，多官能芳香異氰酸酯含有少於2〇重量％， 更佳者3有；於15重量％，最佳者，含有少於π重量％ 之脂肪族異氰酸醋’例如4,4，—二環己基甲烧二異氛酸 醋；異佛酮二異氰義（i s_r〇ne d i i獄卿以e )及環己 烷一異氰馱酯。較佳者，以異氰酸酯封端之預聚物多元醇 含8· 75至9· 40 wt%，較佳者8. 90至9. 30 wt%，更佳者 9. 00至9.25 wt%之未反應之NC0成份。較佳者，以異氰酸 酉曰封端之預聚物多元醇包括以異氰酸酯封端之聚四亞曱基 醚一醇。更佳者，以異氰酸酯封端之預聚物多元醇包括氰 酸酯封端之聚四亞曱基醚二醇，其中，以異氰酸酯封端之 預聚物聚四亞曱基醚二醇含8.9〇至9.30 wt%之未反應之 NCO成份。最佳者’以異氰酸酯封端之預聚物多元醇包括 以異氰酸酯封端之聚四亞曱基醚二醇，其中，以異氰酸酯 封端之預聚物聚四亞甲基醚二醇含9. 00至9. 25 wt°/。之未 反應之NCO成份。 舉例而言’固化劑包括包括4,4’ -亞甲基-雙-鄰-氯 苯胺[1^匸八]、4,4’-亞曱基-雙-(3-氯-2,6-二乙基苯 胺）[MCDEA]、二甲基硫基曱笨二胺、三亞曱基二醇二-對-胺基苯甲酸酯、聚氧化四亞曱二-對-胺基苯甲酸酯、聚氧 化四亞甲單-對-胺基苯曱酸酯、聚伸丙基氧化物二-對-胺 基苯曱酸酯、聚伸丙基氧化物單-對-胺基苯甲酸酯、1,2- 8 94912 201200548 雙(2-胺基苯基硫基)乙燒、“ 基甲苯二胺、5-第三丁^田奸—土又本胺、二乙 土 ，4-甲本一胺、3-第三丁基一 2 曱笨二胺、5-第三戊美9」w J丞A 6~ 田—_ — 基2, 4-甲本二胺、3-第三戊基-2 ^ 曱本一胺、氣曱苯二胺， ㈣。 胺及其混合物。較佳地、固化劑為 製備一體成型窗時，眉斜盥 项料興化學叶的選擇較 使產生之-體成型窗且右φ佳者為 又……, 25%’更佳者，為5至2〇%， 又更佳者’為5至15%，i宙乂土 土 ^ η ^ , 再更佳者，為5至1〇%，又再更佳 者，為5至<10%，最佳去，A c s οη/ 1主 者為5至8%之壓縮變形，此係枏 據ASTMD395^)3方法a在耽下22小時計算得到。視需 要地’可用早-混合步驟避開使用預聚物來製造胺甲酸醋 聚合物系一體成型窗。 、-體成型S較佳者對波長67Gnra光絲現出的光學穿 透性為選自20至70%、20至50%以及3〇至50%之範圍。 本發明之化學機械研磨墊視需要地復包括基層，係界 面接合（interfaced)研磨層。可視需要地用黏著劑將研磨 層黏附於基層。黏著劑可選自壓感黏著劑（pressure sensitive adhesives)、熱融黏著劑（hot melt adhesives)、接觸黏著劑（contact adhesives)及其組合。 在一些實施例中，黏著劑為熱融黏著劑。在一些實施例中， 黏著劑為接觸黏著劑。在一些實施例中，黏著劑為壓感黏 著劑。 視需要地，本發明之化學機械研磨墊復包含基層以及 至少一層界面接合並中介（interposed)於研磨層與基層之 9 94912 201200548 間的附加層。各層可視需要地用黏著劑黏附在一起。黏著 劑可選自壓感黏著劑、熱融黏著劑、接觸黏著劑及其組合。 在一些實施例中，黏著劑為熱融黏著劑。在一些實施例中， 黏著劑為接觸黏著劑。在一些實施例中，黏著劑為壓感黏 著劑。 較佳地，本發明之化學機械研磨墊為適合與研磨機之 平台界面接合。視需要地，本發明之化學機械研磨墊適合 用壓感黏著劑及真空之至少其中之一者而固定於平台之 上。 本發明之化學機械研磨墊之研磨層的研磨表面視需 要地表現出巨觀織構（macrotexture)及微觀織構 (microtexture)之至少一種以促進基材的研磨。較佳者， 研磨表面表現出巨觀織構，其中，巨觀織構設計成能減緩 至少一種水漂現象（hydroplaning);對研磨介質流動之影 響；能調整研磨層的剛度；能減少邊緣效應；及能使研磨 屑容易從研磨表面與基材之間移除。 本發明之化學機械研磨墊之研磨層的研磨表面視需 要地表現出選自穿孔（perforation)及溝槽（grooves)其中 至少之一者之巨觀織構。視需要地，穿孔可從研磨表面延 伸部份或全部地穿過研磨層厚度◊視需要地，溝槽排列於 研磨表面上以使研磨期間墊體轉動時至少一溝槽掃過基材 方。視需要地.，溝槽係選自曲溝槽（curved grooves)、 直線溝槽（linear· grooves)及其結合。溝槽視需要地表現 出幺10密耳（mil)的深度；較佳者，為1〇至15〇密耳。視 10 94912 201200548 需要地，溝槽形成的溝槽圖案包括至少二溝槽，且該至少 二溝槽具有的深度為選自2 10 mil、2 15 mil以及15至 150 mil ;寬度為選自2 10 mil以及10至100 mil ;以及 節距（pitch)為選自 2 30 mil、2 50 mi卜 50 至 200 mil、 70至200 mil，以及90至200 mil的組合。 本發明之化學機械研磨選自磁性基材、光學基材以及 半導體基材之基材的方法，包含：提供具有平台之化學機 械研磨設備；提供至少一選自磁性基材、光學基材以及半 導體基材之基材；選擇具有研磨層之化學機械研磨墊，其 中，研磨層包含一形成於其中之一體成型窗，其中，該一 體成型窗具有5至25°/。，較佳為5至20%，較佳為5至15°/〇, 更佳為5至10%，再更佳為5至8%之壓縮變形；安置化學 機械研磨墊於平台之上；以及以研磨層的研磨表面研磨此 至少一基材。較佳者，本發明之化學機械研磨塾中的一體 成型窗在研磨溫度40°C下研磨10小時後，從研磨表面之 研磨層向外凸起< 50微米（g m)，更佳者，為0至50 // m， 最佳者，為0至40//m。 以下實施例將詳述本發明之部份實施例。 實施例 窗塊體（Window Blocks) 以下内容係製備窗塊體以一體成型至化學機械研磨 墊中作為一體成型窗。各種固化劑（例如MBCA)以及以異氰 酸酯封端之預聚物多元醇（例如從Chemtura取得之L325) 的用量係記載於表，將其二者組合並引入模具之中。接著 11 94912 201200548 將模具中的内容物於烤箱中固化18個小時。烤箱的溫度設 定為在開始的20分鐘時設定為93°C ;接下來的15個小時 又40分鐘為104°C ;並在最後2小時降為2TC。接著以傳 統方法將窗塊體切成栓狀體（plugs)以更容易併入研磨墊 塊體。 表1 實例 MBCA(wt%) L325(wt%) 化學計量比 (NH2 對 NCO) 窗比較例1 18.4 81. 6 0.78:1.00 窗比較例2 21. 5 78. 5 0. 95:1. 00 窗3 23. 2 76.8 1.00:1.05 壓縮變形測試. 對依上述内容製成的窗塊體材料樣本根據規範於 ASTM法D395-03方法A的步驟進行測試以測定壓縮變形。 實驗結果係列於表2。 ^ 表2 實例 測得壓縮變形（以％計） 窗比較例1-1 1. 9 窗比較例1-2 2. 0 窗比較例1-3 2. 3 窗比較例2-1 4. 6 窗比較例2-2 4. 3 窗3-1 6. 1 窗3-2 5. 8 窗3-3 7.4 研磨實驗 12 94912 201200548 研磨塾 用相同的研磨層配方製備（a)具有傳統一體成型窗紕 成（根據上述表1中窗比較例1具有NH2對NC0的化學計量 比為0. 78 : 1· 00)之對照組研磨墊；以及（b)具有創新一體 成型窗組成（根據上述表1中實施例3具有NHz對NC0的化 學計量比為1 : 1. 05)。具傳統窗配方之對照組研磨墊以及 具創新窗配方之研磨塾皆為厚度50mi 1，並具15mi 1深之 圓形溝槽。該二研磨層配方皆壓合於Suba IVTM底墊（Suba201200548 VI. Description of the Invention: [Technical Field to Which the Invention Is Applicable] In summary, the present invention is in the field of the invention, in the field of chemical engineering (4). Chemical window grinding defects - body forming windows (integral low defect - body forming window chemical machine also has a grinding method for mechanical use. Mechanical polishing machine grinding mechanical polishing machine [prior art] Manufacturing integrated circuits and other electronic conductors and dielectric materials deposited in semiconducting:, conductive, semi-removal. Conductive, semiconductor, and dielectric materials. Thin layers can be rounded. Technical deposition. Common deposition techniques included in modern processes. = Also known as paste, chemical vapor deposition, please add: vapor deposition (PECVD), and electrochemical ore (Ecp). Strengthen, when the material layer is deposited and removed sequentially, the top layer of the wafer The surface is flat. Because subsequent semiconductor processing (such as metallization) requires the surface on which the wafer is located, it is necessary to planarize the wafer. The planarization is used to remove non-morphology and surface defects such as rough surfaces and agglomerates. Materials, S-frame damage, traces, and contaminated layers or materials. Chemical mechanical planarization, or chemical mechanical polishing (CMP) is used to flatten substrates (such as semiconductor wafers). Technology. In the conventional medium, the wafer is placed in a carrier assembly and positioned in contact with a polishing crucible in a CMp device. The carrier assembly provides controlled pressure to the wafer to force the wafer against the abrasive body. By external driving force relative to the wafer (for example, 3 94912 201200548) ° At the same time 'chemical composition (polymer), or other grinding solution is supplied between the wafer and the polishing pad. Therefore, borrow Grinding and planarizing the wafer surface by the chemical and mechanical action of the surface of the carcass and the slurry. One of the problems associated with chemical mechanical polishing is determining when the substrate has reached the desired degree of grinding. The in-situ method of determining the end point of the polishing has been developed. Out of the _ branch - using laser interferometer (laser lnterferomety) where the laser-generated light system is used to measure the substrate size, thus, has developed a chemical mechanism with the ability to optically measure the size of the substrate For example, the 5th, 6th, 5th, and 6th 々 々 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , In one embodiment, the abrasive crucible comprises a transparent window member in the opposite opaque body. The window member can be a rod or plug of a transparent polymeric material molded into the crucible. The rod or plug can be inserted. Molded into a grinding 塾 (ie, a body-shaped window), or may be placed at the cutting point of the polishing pad after the molding operation (ie, a plug-in window). The conventional CMP pad includes a plug-in window. The grinding medium easily leaks from the interface between the insert window and the remaining chemical mechanical polishing pads. Leakage of the grinding medium can flow into the polishing layer, the interposer or the underlayer, causing regional differences such as the compressibility of the polishing layer. This leads to an increase in grinding defects. Leakage of the grinding media can also penetrate the polishing pad and cause damage to the grinding device. A conventional chemical mechanical polishing pad comprises an integrally formed window which is a grinding-and-grinding defect (for example, a substrate to be scratched) caused by the use of a polishing pad due to a window that protrudes outward from the polishing layer over time. Compared with the insert window, it is easy to increase the grinding defect by 94912 4 201200548. Accordingly, there is a need for a chemomechanical polishing pad having a window that reduces the leakage problems traditionally associated with plug-in windows, as well as the abrasive defects associated with integrally formed windows. SUMMARY OF THE INVENTION In one aspect of the present invention, a chemical mechanical polishing pad is provided, comprising: an abrasive layer having an abrasive surface and an integrally formed window; wherein the integrally formed window is integrally formed in the polishing layer; Wherein, the integrally formed window is a polyamine oxime oxime reaction product of a curing agent and an isocyanate-terminated prepolymer polyol; wherein the curing agent comprises a prepolymer which is contained in the prepolymer which is blocked with isocyanate. The unreacted NC0 component reacts to form a solidified amine moiety (m〇iety), wherein the curing agent and the isocyanate-terminated prepolymer polyol are unreacted by the amine moiety. The stoichiometric ratio of part is 1:1 to 1: 丨.25; wherein the porosity of the integrally formed window is less than 0.1% by volume (v〇lW; wherein the integrally formed window has a compression deformation of 5 to 2) (compression set); wherein the abrasive surface is suitable for grinding a substrate selected from the group consisting of a magnetic substrate, an optical substrate, and a semiconductor substrate. In another aspect of the invention, a chemical mechanical polishing is selected from the group of magnetic substrates , A method of studying a substrate and a substrate of a semiconductor substrate, comprising: providing a chemical mechanical polishing apparatus having a platform; providing at least one substrate selected from the group consisting of a magnetic substrate, an optical substrate, and a semiconductor substrate; and selecting a chemical having an abrasive layer Mechanical polishing pad 'where the abrasive layer comprises a one-piece molding window formed therein, wherein the integrally formed window has a compression deformation of 5 to 25%; a chemical mechanical polishing pad is placed on the platform; and, the polishing layer is ground 5 94912 201200548 Surface grinding the at least one substrate. In another aspect of the invention, there is provided a method of chemical mechanical polishing of a substrate selected from the group consisting of a magnetic substrate, an optical substrate, and a semiconductor substrate, comprising: providing a platform a chemical mechanical research apparatus; providing at least one substrate selected from the group consisting of a magnetic substrate, an optical substrate, and a semiconductor substrate; selecting a chemical mechanical polishing pad as in claim 1; placing a chemical mechanical polishing pad on the platform; 'The at least one substrate is ground by the polishing surface of the polishing layer. [Embodiment] "Research" used herein and in the scope of the patent application Medium, 'the term, the package 3 3 particle grinding solution and the particle-free grinding solution (for example, no abrasive and reactive liquid slurry). Here, and the scope of the patent application, the "polyurethane", a crucible comprising (a) a polyurethane formed by the reaction of (i) an isocyanate and (ii) a polyol (including a glycol); and (b) from (i) an isocyanate and (^) Polyamine phthalic acid vinegar formed by the reaction of alcohol (including diol) and (丨丨丨) water, amine (diamine and polyamine) or water and amine (monoamine and polyamine). The chemical mechanical polishing pad of the invention comprises an abrasive layer having an abrasive surface and an integrally formed window; wherein the integrally formed window is integrally formed into the 'abrasive layer; wherein the 'integrally formed window is a curing agent and is sealed with iso-IL acid a polyurethane reaction product of a prepolymer polyol, wherein the curing agent comprises an amine which reacts with an unreacted NC0 component contained in a prepolymer polyol which is blocked with isocyanide (tetra) to form an integrally formed window. Part of which, 誃 curing agent and mu (four) sealed enemy pre-polymerization The stoichiometric ratio of the amine polyol to the unreacted NC0 component is i: 丨 to 丨: ι 25; wherein the porosity of the integrally formed window (p_sity) is 94912 6 201200548 <1Q such as ι%; preferably , <0.L, better, for please drop to <0.9 secret, the best, please delete vol%; among them, a prescription agent. ' υο Body molding 13⁄4 has 5 to 25% compression deformation, aged 5' to 20%, better, 5 to 15%, even better, 5 to (10) better, 5 to 8% compression deformation Wherein the polishing surface is suitable for polishing a substrate selected from the group consisting of a magnetic substrate, an optical substrate, and a semiconductive material. Preferably, the curing agent is provided in a suitable ratio with the prepolymer of the prepolymer which is blocked with isocyanic acid to give an unreacted NC0 stoichiometric ratio of 1 : 1 to 1: 1.25 'better, 1 : 1 to 1:115 is better, (1) to 1 · 1·10. This stoichiometry can be achieved by directly providing a stoichiometric amount of feedstock or indirectly reacting partially with water or exposed moisture. For example, an isocyanate-terminated prepolymer polyol includes the reaction product of a polyol with a sulphate b aromatic isocyanate. Suitable polyols include, for example, polyether polyols, polycarbonate polyols, polyester polyols, polycaprolactone polyols, ethylene glycol, h 2 -propylene glycol, h 3 -propylene glycol, 1,2-butene Glycol, 1,3-butanediol, 2-methyl-propanediol, 14-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-15 monopentanediol, 1' 6-hexanediol, diethylene glycol, dipropylene glycol, tripropylene glycol and mixtures thereof. Preferred polyols include polytetramethylene ether glycol (PTMEG), polypropylene glycol [PPG], and ester polyols (eg, ethylene adipate or butylene glycol adipate). , its copolymers and mixtures thereof. Suitable polyfunctional aromatic isocyanate g package 94912 7 201200548 22,4-曱 diisocyanate, 2,6-toluene diiso-acid vinegar, 4,4, benzophenone diisocyanate Sour vinegar, Cai], 5_ diisocyanate vinegar, diiso- acetonide, streptosamine, acetonyl diisocyanate, bismuth phenyl diiso-sour acid vinegar and mixtures thereof. Preferably, the polyfunctional aromatic isocyanate contains less than 2% by weight, more preferably 3; at 15% by weight, optimally, less than π% by weight of aliphatic isocyanate vines such as 4, 4, - Dicyclohexylmethyl ketone diiso-sour vinegar; isophorone diisocyanide (i s_r〇ne dii prisoner e) and cyclohexane monoisocyanate. Preferably, the isocyanate-terminated prepolymer polyol contains from 8.75 to 9.40 wt%, preferably from 8.90 to 9.30 wt%, more preferably from 9.00 to 9.25 wt%. The NC0 component of the reaction. Preferably, the prepolymer polyol terminated with isocyanic acid comprises a polytetradecyl ether monol terminated with isocyanate. More preferably, the isocyanate-terminated prepolymer polyol comprises a cyanate-terminated polytetramethylene ether glycol, wherein the isocyanate-terminated prepolymer polytetramethylene ether glycol contains 8.9. 〇 to 9.30 wt% of unreacted NCO component. Preferably, the isocyanate-terminated prepolymer polyol comprises an isocyanate-terminated polytetramethylene ether glycol, wherein the isocyanate-terminated prepolymer polytetramethylene ether glycol comprises 9. 00 to 9. 25 wt ° /. The unreacted NCO component. For example, 'curing agents include 4,4'-methylene-bis-o-chloroaniline [1^匸8], 4,4'-indenylene-bis-(3-chloro-2,6- Diethyl aniline) [MCDEA], dimethylthio sulfonium diamine, tridecyl diol di-p-amino benzoate, polyoxytetramethylene di-p-amino benzoate , polyoxytetramethylene mono-p-aminobenzoate, poly-extension propyl di-p-aminobenzoate, poly-propyl oxide mono-p-aminobenzoate 1,2- 8 94912 201200548 bis(2-aminophenylthio)ethene, "toluene diamine, 5-third butyl ^ 奸 — - soil and amine, diethyl soil, 4-benben Monoamine, 3-tert-butyl-2,thenium diamine, 5-trimethylene 9"w J丞A 6~ Tian-_-yl 2, 4-methylbendiamine, 3-tripentyl -2 ^ 曱-monoamine, gas phenylenediamine, (iv). Amines and mixtures thereof. Preferably, when the curing agent is used for preparing the integrally formed window, the selection of the chemical leaf of the eyebrow oblique item is better than that of the body forming window and the right φ is better..., 25% 'better, 5 To 2〇%, and the better one is 5 to 15%, i 乂 乂 soil ^ η ^ , and even better, 5 to 1 〇%, and even better, 5 to < 10% , the best to go, A cs οη / 1 main body is 5 to 8% compression deformation, this system is calculated according to ASTM D395 ^) 3 method a in the next 22 hours. The use of a prepolymer to avoid the use of prepolymers can be used to produce a urethane polymer polymer monolithic window. Preferably, the optical permeability exhibited by the bulk forming S to the wavelength 67Gnra filament is selected from the range of 20 to 70%, 20 to 50%, and 3 to 50%. The CMP pad of the present invention optionally includes a base layer that interfaces to the abrasive layer. The abrasive layer may be adhered to the substrate by an adhesive as needed. The adhesive may be selected from the group consisting of pressure sensitive adhesives, hot melt adhesives, contact adhesives, and combinations thereof. In some embodiments, the adhesive is a hot melt adhesive. In some embodiments, the adhesive is a contact adhesive. In some embodiments, the adhesive is a pressure sensitive adhesive. Optionally, the CMP pad of the present invention comprises a base layer and at least one additional layer interfacially bonded and interposed between the abrasive layer and the base layer 994912 201200548. The layers can be adhered together with an adhesive as needed. The adhesive may be selected from the group consisting of pressure sensitive adhesives, hot melt adhesives, contact adhesives, and combinations thereof. In some embodiments, the adhesive is a hot melt adhesive. In some embodiments, the adhesive is a contact adhesive. In some embodiments, the adhesive is a pressure sensitive adhesive. Preferably, the CMP pad of the present invention is adapted to interface with the platform of the mill. Optionally, the CMP pad of the present invention is adapted to be secured to the platform by at least one of a pressure sensitive adhesive and a vacuum. The abrasive surface of the abrasive layer of the CMP pad of the present invention optionally exhibits at least one of a macrotexture and a microtexture to promote the grinding of the substrate. Preferably, the abraded surface exhibits a macroscopic texture, wherein the macroscopic texture is designed to mitigate at least one hydroplaning; affect the flow of the abrasive medium; the stiffness of the abrasive layer can be adjusted; And can remove abrasive debris from the abrasive surface and the substrate. The abrasive surface of the abrasive layer of the CMP pad of the present invention optionally exhibits a macroscopic texture selected from at least one of perforation and grooves. Optionally, the perforations may extend from the abrasive surface partially or wholly through the thickness of the abrasive layer as desired. The grooves are arranged on the abrasive surface such that at least one groove sweeps across the substrate as the pad rotates during polishing. Optionally, the trench is selected from the group consisting of curved grooves, linear grooves, and combinations thereof. The grooves optionally exhibit a depth of 幺10 mils; preferably, from 1 〇 to 15 mils. 10 94912 201200548 desirably, the groove pattern formed by the groove includes at least two grooves, and the at least two grooves have a depth selected from 2 10 mil, 2 15 mil, and 15 to 150 mil; and the width is selected from 2 10 mil and 10 to 100 mil; and the pitch is selected from the group consisting of 2 30 mil, 2 50 mi Bu 50 to 200 mil, 70 to 200 mil, and 90 to 200 mil. The method for chemical mechanical polishing of a substrate selected from the group consisting of a magnetic substrate, an optical substrate, and a semiconductor substrate, comprising: providing a chemical mechanical polishing device having a platform; providing at least one selected from the group consisting of a magnetic substrate, an optical substrate, and a semiconductor a substrate of a substrate; a chemical mechanical polishing pad having an abrasive layer, wherein the polishing layer comprises a one-piece molding window formed therein, wherein the integrally formed window has 5 to 25°/. Preferably, it is 5 to 20%, preferably 5 to 15 ° / 〇, more preferably 5 to 10%, still more preferably 5 to 8% compression deformation; and a chemical mechanical polishing pad is placed on the platform; The at least one substrate is ground with an abrasive surface of the abrasive layer. Preferably, the integrally formed window in the chemical mechanical polishing crucible of the present invention is swelled from the abrasive layer of the abrasive surface to a thickness of 50 μm (gm) after grinding at a polishing temperature of 40 ° C for 10 hours, and more preferably, It is 0 to 50 // m, and the best is 0 to 40//m. The following examples will detail some of the embodiments of the invention. EXAMPLES Window Blocks The following is the preparation of a window block body for integral molding into a chemical mechanical polishing pad as an integrally formed window. The amounts of various curing agents (e.g., MBCA) and isocyanate-terminated prepolymer polyols (e.g., L325 from Chemtura) are listed in the table, and the two are combined and introduced into a mold. Next, 11 94912 201200548 The contents of the mold were cured in the oven for 18 hours. The temperature of the oven was set to 93 °C at the first 20 minutes; 104 °C for the next 15 hours and 40 minutes; and 2TC for the last 2 hours. The window block is then cut into plugs in a conventional manner to more easily incorporate the pad body. Table 1 Example MBCA (wt%) L325 (wt%) stoichiometric ratio (NH2 to NCO) window comparison example 18. 18.4 81. 6 0.78: 1.00 window comparison example 2 21. 5 78. 5 0. 95:1. 00 window 3 23. 2 76.8 1.00:1.05 Compression Deformation Test. A sample of the window block material made in accordance with the above is tested according to the procedure specified in ASTM Method D395-03 Method A to determine the compression set. The experimental results are summarized in Table 2. ^ Table 2 Example measured compression deformation (in %) Window comparison example 1-1 1. 9 window comparison example 1-2 2. 0 window comparison example 1-3 2. 3 window comparison example 2-1 4. 6 window Comparative Example 2-2 4. 3 Window 3-1 6. 1 Window 3-2 5. 8 Window 3-3 7.4 Grinding Experiment 12 94912 201200548 Grinding 制备 Prepared with the same abrasive layer formulation (a) with traditional one-piece window 纰a control pad according to the window comparison example 1 in Table 1 having a stoichiometric ratio of NH2 to NC0 of 0.78:1·00; and (b) having an innovative integral molding window composition (according to Table 1 above) Example 3 has a stoichiometric ratio of NHz to NC0 of 1:0.5). The control pad with the traditional window formulation and the grinding pad with the innovative window formula are all 50mm 1 and have a 15mm 1 deep circular groove. The two abrasive layer formulations are pressed against the Suba IVTM bottom pad (Suba
IVTMsubpad)(從 Rohm and Haas Electronic Materials CMPIVTMsubpad) (from Rohm and Haas Electronic Materials CMP
Inc取得）材料之上。 研磨條件 使用下列研磨銅圍包晶圓（blanket wafer) : Applied Materials Mirra® 200 mm研磨機及上述研磨塾，研磨下 壓力（polishing down force)20. 7 千帕（kPa);化學機械 研磨組成物係（從Epoch Material Co.，Ltd取得之 EPL2361)以及流速為200 ml/分鐘；工作台轉速為93 rpm ; 载體轉速為 87 rpm ; Kinik Diagrid® AD3CG 181060 修整 器’以修整下壓力48. 3 kPa進行全原位修整，以及以下壓 力62. lkPa進行20分鐘磨合（break-in)，接著，以下壓力 48. 3kPa進行1〇分鐘磨合。在〇小時、2. 5小時、5小時、 7· 5小時以及1〇小時研磨之後以用於未圖案化晶圓表面之 KLA Tencor卯-丨檢測器決定銅圍包晶圓上的刮痕。刮痕 計數的檢測結果列於表3。 94912 13 201200548 表3 實例 窗組成 研磨後之刮痕計數 0小時 2.5 小時 5小時 7.5 小時 10小時 研磨對照 組-1 窗比較例1 44 84 349 175 416 研磨對照 組-2 窗比較例1 26 31 228 353 546 P1 窗3 183 143 60 58 109 P2 窗3 158 166 78 61 149 窗凸起 此外，於所述的研磨條件下連續晶圓研磨10小時後， 在研「磨表面量測一體成型窗輪廓以測得窗從研磨表面向外 凸起程度。窗比較例1的一體成型窗材料表現出大於100 /zm之平均凸起，而窗3之一體成型窗材料則表現少於40 // m之平均凸起。 【圖式簡單說明】 無 【主要元件符號說明】 無 14 94912Inc acquired) above the material. The grinding conditions were as follows: a blanket wafer: an Applied Materials Mirra® 200 mm mill and the above-mentioned grinding crucible, a polishing down force of 20.7 kPa; a chemical mechanical polishing composition Department (EPL2361 from Epoch Material Co., Ltd) and flow rate of 200 ml/min; table rotation speed of 93 rpm; carrier rotation speed of 87 rpm; Kinik Diagrid® AD3CG 181060 dresser 'to trim down pressure 48. 3 The kPa was subjected to full-scale dressing, and the following pressure was 62. lkPa for 20 minutes of break-in, followed by the following pressure of 48.3 kPa for 1 minute to run-in. The KLA Tencor(R) detector for unpatterned wafer surfaces was used to determine scratches on the copper wrap wafer after 〇 hours, 2.5 hours, 5 hours, 7.5 hours, and 1 hour of grinding. The test results of the scratch count are shown in Table 3. 94912 13 201200548 Table 3 Example window composition Scratch count after grinding 0 hours 2.5 hours 5 hours 7.5 hours 10 hours grinding control group-1 window comparison example 1 44 84 349 175 416 grinding control group-2 window comparison example 1 26 31 228 353 546 P1 window 3 183 143 60 58 109 P2 window 3 158 166 78 61 149 window bulge In addition, after continuous wafer grinding for 10 hours under the described grinding conditions, the grinding surface measurement is integrated with the contour of the window. The window was measured to protrude outward from the abrasive surface. The integrally formed window material of the window comparison example 1 exhibited an average protrusion of more than 100 /zm, and the window forming material of the window 3 exhibited an average of less than 40 // m. Raised. [Simple diagram description] No [Main component symbol description] No 14 94912