TW201145813A - Operational amplifier - Google Patents

Operational amplifier Download PDF

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TW201145813A
TW201145813A TW99118716A TW99118716A TW201145813A TW 201145813 A TW201145813 A TW 201145813A TW 99118716 A TW99118716 A TW 99118716A TW 99118716 A TW99118716 A TW 99118716A TW 201145813 A TW201145813 A TW 201145813A
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Taiwan
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differential
electrically connected
circuit
transistors
transistor
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TW99118716A
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Chinese (zh)
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TWI397258B (en
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Chun-Hsien Kuo
Tai-Haur Kuo
Hung-Yi Huang
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Univ Nat Cheng Kung
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Abstract

An operational amplifier includes: a first differential circuit coupled to a ground; a second differential circuit coupled between a DC voltage and the first differential circuit; and a switching device coupled to the first and second differential circuit, and selectively configuring each of the first and second differential circuits to operate in a differential mode. When the first differential circuit operates in the differential mode, it outputs a first differential current based on a first set of differential voltages, and cooperates with the second differential circuit to generate a set of differential output voltages based on the first differential current. When the second differential circuit operates in the differential mode, it outputs a second differential current based on a second set of differential voltages, and cooperates with the first differential circuit to generate a set of differential output voltages based on the second differential current.

Description

201145813 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種放大器,特別是指一種運算放大 器。 【先前技術】 習知的一種管線式類比/數位轉換裝置以共享運算放大 器的架構,將一輸入電壓轉換成一相對應的數位信號,來 節省功率和面積的成本。 但是上述類比/數位轉換裝置的缺點為:所共享運算放 大器的輸入差動對的閘極電容因.前一次的電荷注入,會留 下殘值記憶效應,而降低整體的效能。 如圖1所示,美國專利第6,759 898 B1號,,dual input201145813 VI. Description of the Invention: [Technical Field] The present invention relates to an amplifier, and more particularly to an operational amplifier. [Prior Art] A conventional pipeline analog/digital conversion apparatus converts an input voltage into a corresponding digital signal by a shared arithmetic amplifier structure to save power and area cost. However, the above analog/digital conversion device has the disadvantage that the gate capacitance of the input differential pair of the shared operational amplifier is such that the previous charge injection leaves the residual memory effect and reduces the overall efficiency. As shown in Figure 1, U.S. Patent No. 6,759 898 B1, dual input

的目的。 I點為:使用尾電流源200,將 而降低電路可容忍雜訊的大小 但是上述運算放大器的缺點為 限制差動輸出信號的振幅, 【發明内容】 即在提供一種避免限制差動輸 因此’本發明之目的, 201145813 出信號的振幅、增加可容忍雜訊及減少功率消耗的運算放 大器。 該運算放大器,包含: 一第一差動電路,電連接於地; 一第二差動電路,電連接於一直流電壓和該第一差動 電路之間;及 一切換裝置,電連接該第一、二差動電路,且該切換 裝置選擇性地使各差動電路操作於一差動模式; 其中,當該第一差動電路操作於一差動模式,會根據 一第一組差動電壓輸出一第一差動電流,且該第一、二差 動電路更將起阻抗作用而根據該第一差動電流產生一組差 動輪出電壓; 當該第二差動電路操作於該差動模式,會根據一第二 組差動電壓輸出一第二差動電流,且該第一、二差動電路 更將起阻抗作用而根據該第二差動電流產生該組差動輸出 電壓。 本發明之另一目的,即在提供另一種運算放大器。 該運算放大器,包含: -直流偏壓電路,用於產生—呈直流的第—偏壓電流 第一差動電路,耦接該直流偏壓電路; 一第二差動電路,耦接該直流偏壓電路; 一切換裝置 裝置 電連接該第一、二差動電路,且該切換 選擇性地使各差動電路操作於 一差動模式;及 5 201145813 一共模偏壓電路,電連接該切換裝置; 其中,當該第一差動電路操作於一差動模式,會耦接 該直流偏壓電路以接收該第一偏壓電流,並根據一第一組 差動電壓輸出-第-差動電流,且該第―、二差動電路和 該共模偏壓電路該更將起阻抗作用而根據該第—差動電流 產生一組差動輸出電壓; 當該第二差動電路操作於該差動模式,會耦接該直流 偏壓電路以接收該第一偏壓電流,並根據一第二組差動電 磨輸出-第二差動電流’且該第―、二差動電路和該共模 偏麼電路該更將起阻抗仙而根據該第二差動電流產生該 組差動輸出電壓;且 ^ 該共模偏壓電路會根據一共模控制電壓將該組差動輸 出電壓的平均值維持於一預設值。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效,在 以下配合參考圖式之三個較佳實施例的詳細說明中,將可 清楚的呈現。 <第一較佳實施例> 如圖2所示,本發明運算放大器之第一較佳實施例, 適用於接收一第一組差動電壓和一第二組差動電壓,並進 行放大以輪出—組差動输出電壓v〇+、v〇·。且該運算放大 窃包含:一第-差動電路A1、-第二差動電路A2、-切換 裝置T,及一增益電路 該第一差動電路A1用於將所接收的電壓轉換成電流, 201145813 且包括一第一電晶體NMOS1和一第二電晶體NM〇S2,該 第一、二電晶體NM〇S 1、2分別具有一閘極、一汲極和一 電連接於地的源極。 該第二差動電路A2用於將所接收的電壓轉換成電流, 且包括一第三電晶體PM0S3和一第四電晶體PM〇S4,該第 三、四電晶體PM0S3、4分別具有一閘極、一汲極和一電 連接於一直流電壓VDD的源極。the goal of. Point I is: using the tail current source 200, which reduces the size of the noise that can be tolerated by the circuit. However, the above operational amplifier has the disadvantage of limiting the amplitude of the differential output signal. [Invention] It is to provide a way to avoid limiting the differential input. For the purpose of the present invention, 201145813 increases the amplitude of the signal, increases the operational amplifier that can tolerate noise and reduce power consumption. The operational amplifier includes: a first differential circuit electrically connected to the ground; a second differential circuit electrically connected between the DC voltage and the first differential circuit; and a switching device electrically connected to the first One or two differential circuits, and the switching device selectively operates the differential circuits in a differential mode; wherein, when the first differential circuit operates in a differential mode, the differential is based on a first group The voltage outputs a first differential current, and the first and second differential circuits further act as an impedance to generate a set of differential wheeling voltages according to the first differential current; when the second differential circuit operates at the difference In the active mode, a second differential current is output according to a second set of differential voltages, and the first and second differential circuits further function as impedances to generate the set of differential output voltages according to the second differential currents. Another object of the invention is to provide another operational amplifier. The operational amplifier includes: - a DC bias circuit for generating - a first bias current of a DC current, a first differential circuit coupled to the DC bias circuit; and a second differential circuit coupled to the a DC bias circuit; a switching device electrically connecting the first and second differential circuits, and the switching selectively operating the differential circuits in a differential mode; and 5 201145813 a common mode bias circuit, Connecting the switching device; wherein, when the first differential circuit operates in a differential mode, the DC bias circuit is coupled to receive the first bias current, and according to a first set of differential voltage outputs - a first-differential current, and the first and second differential circuits and the common-mode bias circuit further act as an impedance to generate a set of differential output voltages according to the first differential current; The dynamic circuit operates in the differential mode, coupled to the DC bias circuit to receive the first bias current, and according to a second set of differential electric grind output - the second differential current 'and the first, The second differential circuit and the common mode bias circuit will further act as an impedance The second differential current generates the set of differential output voltages; and ^ the common mode bias circuit maintains the average of the set of differential output voltages at a predetermined value based on a common mode control voltage. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the drawings. <First Preferred Embodiment> As shown in FIG. 2, a first preferred embodiment of the operational amplifier of the present invention is adapted to receive a first set of differential voltages and a second set of differential voltages and to amplify Take the wheel-set differential output voltages v〇+, v〇·. And the operation amplification includes: a first-differential circuit A1, a second differential circuit A2, a switching device T, and a gain circuit. The first differential circuit A1 is configured to convert the received voltage into a current. 201145813 includes a first transistor NMOS1 and a second transistor NM〇S2, wherein the first and second transistors NM〇S 1 and 2 respectively have a gate, a drain, and a source electrically connected to the ground. . The second differential circuit A2 is configured to convert the received voltage into a current, and includes a third transistor PM0S3 and a fourth transistor PM〇S4, wherein the third and fourth transistors PM0S3 and 4 respectively have a gate A pole, a drain and a source are electrically connected to the source of the DC voltage VDD.

該切換裝置T則用以切換地傳遞該第一組差動電壓或 一第一偏壓電壓Vbn到第一、二電晶體NM〇sl、2的閘極 ,並用以切換地傳遞該第二組差動電壓或一第二偏壓電壓 Vbp到PMOS3、4的閘極。較佳地,本例的第一、二組差 動電壓不相同,因此於圖式中分別以(Vini+、、 (Vin2+、Vin2-)表示。 〃值得注意的是’當該切換裝置傳遞第一組差動電壓到 第一、二電晶體NMOS1、2 #閘極時,會傳遞第二偏壓電 壓Vbp到第三、四電晶體pM〇S3、4的間極。而當該切換 裝置τ傳遞第—偏壓電壓Vbn到第―、二電晶體麵㈣、 2的閘極時’會傳遞第二組差動電壓到第三、四電晶體 PM0S3、4的閘極。 而各差動電路會因為收到的信號不同 向孫作於The switching device T is configured to switchably transmit the first set of differential voltages or a first bias voltage Vbn to the gates of the first and second transistors NM〇s1, 2, and to switch the second group The differential voltage or a second bias voltage Vbp is applied to the gates of the PMOSs 3, 4. Preferably, the first and second sets of differential voltages of the present example are different, and therefore are represented by (Vini+, (Vin2+, Vin2-) respectively in the figure. 〃 It is worth noting that 'when the switching device transmits the first When the differential voltage reaches the first and second transistors NMOS1, 2# gate, the second bias voltage Vbp is transmitted to the interpoles of the third and fourth transistors pM〇S3, 4. When the switching device τ transmits When the first bias voltage Vbn reaches the gates of the first and second transistors (4) and 2, the second set of differential voltages are transmitted to the gates of the third and fourth transistors PM0S3, 4. The differential circuits will Because the signals received are different to Sun

, ▼…r rj I 動模式或-偏壓模式。詳細作動情形說明如下 :二圖3,當第一、二電晶體難⑽、2的閘極们 作於“組差動電壓Vhll+、¥ ’第一差動電路A1會击 ;動模式而藉由該第一、二電晶體蘭〇51、2的㈣ 201145813 輸出一第一差動電。dl。此時,由於該第三、四電晶體 _S3、4的間極分別收到第二偏壓電壓、,所以第二差 動電路A2會操作於偏壓模式而藉由第三、四電晶體 PMOS3、4的沒極輸出二偏壓電流咖。該第—、二差動電 路Μ、A2更將起阻抗作用而根據該第—差動電流⑻產生 該組差動輸出電壓Vo+、vQ_。 參閱圖4,反之,者楚一 田第 '一電晶體NMOS1、2的閘 極分別收到第-偏壓電壓Vbn,第—差動電路…會操作於 偏堡模式而藉由該第-、二電晶體Nm〇si、2岐極產生 二偏壓電流1dC2°此時,由於第三、四電晶體PM〇S3、4 的閘極分別接收該第二組差動電M Vin2+、vin2_,所以第 二差動電4 A2會操作於差動模式而藉由第三、四電晶體 腦S3、4的汲極輸出該第二差動電流奶。該第―、二差 動電路M、A2更將起阻抗作用而根據該第二差動電流⑽ 產生該組差動輸出電壓V〇+、ν〇-。 回歸參_ 2,詳細來說,油換裝置τ包括電連接第 -差動電路A1的二個第一開關S1和二個第二開關Μ,且 包括電連接第二差動電路A2的二個第—開關si和二個第 二開關S2。每一開關皆具有一第一端、—第二端和一控制 端’且各控制端受控制使相關的第__端和第二端於導通與 不導通之間切換。 電連接第-差動電路A1的二個第一開si,會藉由 各自的第-端分別接收該第一組差動電壓Vinl+、vini_, 且藉由各自的第二端分別電連接該二電晶冑画⑽、2的 201145813 間極。 電連接第一差動電路A1的二個第二開關S2,會藉由 各自的第一端分別接收第一偏壓電壓vbn,且藉由各自的第 二端分別電連接該二電晶體NMOS1、2的閘極。 另一方面’電連接第二差動電路A2的二個第一開關 S1 ’會藉由各自的第一端分別接收第二偏壓電壓Vbp,且 藉由各自的第二端分別電連接該二電晶體p]V[〇S3、4的閑 極。 • 電連接第二差動電路A2的二個第二開關,會藉由各自 的第一端分別接收該第二組差動電壓Vin2+、Vin2_,且藉 由各自的第二端分別電連接該二電晶體PM〇S3、4的閘極 該切換裝置T根據一控制信號來控制,使得所有第一 開關s 1同步導通或不導通,也使得所有第二開關S2同步 導通或不導通。且值得注意的是,第一、二開關S1、S2的 導通期間不會互相重疊(overlap)。, ▼...r rj I motion mode or -bias mode. The detailed operation situation is as follows: In Fig. 3, when the first and second transistors are difficult (10), the gates of 2 are made in the "group differential voltage Vhll+, ¥ 'the first differential circuit A1 is hit; in the dynamic mode The first and second transistors Lancome 51, 2 (4) 201145813 output a first differential power dl. At this time, since the third and fourth transistors _S3, 4 respectively receive the second bias The second differential circuit A2 operates in the bias mode and outputs two bias currents through the non-polarization of the third and fourth transistors PMOS3, 4. The first and second differential circuits Μ, A2 are further The set of differential output voltages Vo+, vQ_ will be generated according to the first differential current (8). Referring to FIG. 4, on the contrary, the gates of the first transistors NMOS1 and 2 respectively receive the first- The bias voltage Vbn, the first-differential circuit... operates in the partial mode, and the two-bias current is generated by the first and second transistors Nm〇si, 2, and the second bias current is 1dC2°. The gates of the crystals PM〇S3 and 4 respectively receive the second set of differential powers M Vin2+ and vin2_, so the second differential power 4 A2 operates in the differential mode and borrows The drains of the third and fourth transistor brains S3, 4 output the second differential current milk. The first and second differential circuits M and A2 will further act as impedances to generate the group according to the second differential current (10). Differential output voltage V〇+, ν〇-. Regression parameter _ 2, in detail, the oil changing device τ includes two first switches S1 and two second switches 电 electrically connected to the first differential circuit A1, and The switch includes two first switch si and two second switches S2 electrically connected to the second differential circuit A2. Each switch has a first end, a second end and a control end, and each control end is controlled to be The related __ terminal and the second end are switched between conducting and non-conducting. The two first opening si of the first differential circuit A1 are electrically connected, and the first group is respectively received by the respective first end. The driving voltages Vin1+, vini_ are electrically connected to the 201145813 interpoles of the two transistors (10) and 2 respectively through the respective second ends. The two second switches S2 electrically connected to the first differential circuit A1 are The first terminals respectively receive the first bias voltage vbn, and are respectively electrically connected to the gates of the two transistors NMOS1 and 2 through the respective second ends. On the other hand, the two first switches S1' electrically connected to the second differential circuit A2 respectively receive the second bias voltage Vbp by the respective first ends, and are electrically connected by the respective second ends respectively. The second transistor p]V[〇S3, 4 of the idle pole. • The second switch of the second differential circuit A2 is electrically connected, and the second set of differential voltages Vin2+ are respectively received by the respective first ends, Vin2_, and electrically connected to the gates of the two transistors PM〇S3, 4 by respective second ends, the switching device T is controlled according to a control signal, so that all the first switches s 1 are synchronously turned on or off, All of the second switches S2 are turned on or off. It is also worth noting that the on periods of the first and second switches S1, S2 do not overlap each other.

如此,當所有第一開關S i導通而所有第二開關S2不 導通時,則第一差動電路A1操作於差動模式,第二差動電 路A2操作於偏壓模式。當所有第一開關S1不導通而所有 第二開關S2導通時,則第一差動電路Ai操作於偏壓模式 ,第二差動電路A2操作於差動模式。 此外,增益電路G電連接於該第一、二差動電路ai〜2 之間’以接收來自該第-或二差動電路A1、A2的差動電流 。且增益電路G提供一增益以將來自該第一、二差動電「路^ 201145813 的阻抗作用進行放大,以增加該組差動輸出電壓Vo+、Vo-的幅值。 該增益電路G包括一第五電晶體PMOS5、一第六電晶 體PMOS6、一第七電晶體NMOS7、一第八電晶體NMOS8 、四個放大單元G1~G4。 該四個放大單元G1~G4的輸入端分別電連接於該四電 晶體PM0S5、PMOS6、NM0S7、NMOS8的源極,且四個 放大單元G1~G4的輸出端分別電連接於該四電晶體PMOS5 、PMOS6、NMOS7、NMOS8 的閘極。 籲 該四電晶體 PMOS5、PMOS6、NMOS7、NMOS8 的源 極分別電連接於該四電晶體PMOS3、PMOS4、NMOS1、 NMOS2的汲極。 該二電晶體NMOS7、NMOS8的汲極分別電連接於該 二電晶體PMOS5、PMOS6的汲極,且輸出該組差動輸出電 屋 Vo-、Vo+。 本實施例中的第一、二、七、八電晶體NMOS1、2、7 、8是一N型金屬氧化物半導體場效電晶體,而該第三、四 春 、五、六電晶體PMOS3~6是一 P型金屬氧化物半導體場效 電晶體。 又如圖5所示,為第一較佳實施例的變形,其中差別 在於: 沒有該增益電路G,而是第一差動電路A1直接電連接 於第二差動電路A2,且該第一、二差動電路將分-別起阻抗 作用而根據所產生的差動電流產生該組差動輸出電壓Vo+、 10 201145813 v〇-。又此變形的電路操作與上述類似,故不再重述。 而在詳細電路連接方式的差別為: 該第一、二電晶體NMOS1、NMOS2的汲極分別電連 接於該第三 '四電晶體PM0S3、PM〇S4的汲極,且輸出該 組差動輸出電壓ν〇_、ν〇+。 上述架構因移除尾端電流源,相較於先前技術可得到 更廣的輸出振幅》 <第二較佳實施例>Thus, when all of the first switches S i are turned on and all of the second switches S2 are not turned on, the first differential circuit A1 operates in the differential mode, and the second differential circuit A2 operates in the bias mode. When all of the first switches S1 are not turned on and all of the second switches S2 are turned on, the first differential circuit Ai operates in the bias mode, and the second differential circuit A2 operates in the differential mode. Further, a gain circuit G is electrically connected between the first and second differential circuits ai to 2' to receive a differential current from the first or second differential circuits A1, A2. And the gain circuit G provides a gain to amplify the impedance from the first and second differential electric circuits "201145813 to increase the amplitude of the set of differential output voltages Vo+, Vo-. The gain circuit G includes a a fifth transistor PMOS5, a sixth transistor PMOS6, a seventh transistor NMOS7, an eighth transistor NMOS8, and four amplification units G1~G4. The input terminals of the four amplification units G1 G G4 are electrically connected to The sources of the four transistors PM0S5, PMOS6, NM0S7, and NMOS8, and the output terminals of the four amplification units G1 to G4 are electrically connected to the gates of the four transistors PMOS5, PMOS6, NMOS7, and NMOS8, respectively. The sources of the PMOS5, PMOS6, NMOS7, and NMOS8 are electrically connected to the drains of the four transistors PMOS3, PMOS4, NMOS1, and NMOS2. The drains of the two transistors NMOS7 and NMOS8 are electrically connected to the two transistors PMOS5 and PMOS6, respectively. The drain of the group and the output of the differential output electric house Vo-, Vo+. The first, second, seventh, and eighth transistors NMOS 1, 2, 7, and 8 in this embodiment are an N-type metal oxide semiconductor field effect. a transistor, and the third, fourth spring, five, six transistor P MOS3~6 is a P-type metal oxide semiconductor field effect transistor. As shown in Fig. 5, it is a modification of the first preferred embodiment, wherein the difference is: without the gain circuit G, but the first differential circuit A1 is directly electrically connected to the second differential circuit A2, and the first and second differential circuits will respectively perform an impedance action to generate the set of differential output voltages Vo+ according to the generated differential current, 10 201145813 v〇- The circuit operation of this deformation is similar to the above, so it will not be repeated. The difference in the detailed circuit connection manner is as follows: The first and second transistors NMOS1, NMOS2 are electrically connected to the third 'four electric The drains of the crystals PM0S3, PM〇S4, and the differential output voltages ν〇_, ν〇+ are output. The above structure can obtain a wider output amplitude than the prior art by removing the tail current source. Second preferred embodiment >

如圖6所示,本發明運算放大器之第二較佳實施例, 適用於接收一第一組差動輸入電壓Vinl+、Vin卜和一第二 組差動輸人㈣Vin2+、Vin2_,並進行放大以輸出一組差 動輸出電壓Vo+、Vo-。 且該運算放大器包含:-直流偏壓電路D、—第一差動 電路B1' H動電路B2、—切換裝置τ、—增益電路 G、-共模回授電路CF、一共模偏壓電路c。其中,增益 電路G會透過該切換裝置了分㈣接到第1動電路βΐ、 一第二差動電路B2。 直流偏壓電路D用於產生-呈直流的第-偏壓電流IB1 ,且包括-第十-電晶體PM〇Su,該電晶體Μ継具有 :電連接於一直流電壓VDD的源極 '一電連接於一偏塵電 壓Vbp的閘極、和一輸出該第一偏屋電流ΐβι的沒極。 第一差動電路B1透過該切τ > ^ ^刀換裴置T耦接該直流偏壓電 並用於將所接收的M轉換成電流, 日日體PMOS1及一第二電晶體pM⑽。該二電晶[體] 11 201145813 PMOSl、2分別具有一閘極、一源極和—汲極。 該第二差動電路透過該切換裝置Τ耦接該直流偏壓電 路,並用於將所接收的電壓轉換成電流,且包括··一第九 電晶體PMOS9及-第十電晶體pM〇Si〇。該二電晶體 PMOS9、10分別具有一閘極、一源極和一汲極。 該切換裝置T則用以切換地傳遞該第一組差動電壓或 -偏壓電M Vbp到二電晶體PM⑽、2的閘極,並用以切 換地傳遞該第二組差動電壓或該偏壓電壓到pM〇s9 ' 的 閘極。較佳地,本例的第一、二組差動電壓相同。 · 值得注意的是,當該切換裝置τ傳遞第一組差動電壓 到一電晶體PM0S1、2的閘極時’會傳遞偏壓電壓心到 -電晶體PM0S9、1G的閘極。而當該切換裝置傳遞偏壓電 壓Vbp到二電晶體PMOS1、2的閘極時,會傳遞第二組差 動電壓到PMOS9、1〇的閘極。 而各差動電路Bl、B2會因為收到的信號不同,而操作 於一差動模式或一偏壓模式。詳細作動情形說明如下。 參閱圖7’當二電晶體PM〇sl、w閘極分別收到第一 · 組差動電壓vinl+、Vinl’第—差動電路B1會操作於差動 模式而藉由該二電晶體PMOS1、2的汲極輸出一呈交流的 第一差動電流idi。此時,由於二電晶體pM〇S9、ι〇的閘 極分別收到偏壓電壓Vbp’所以第二差動電路B2會操作於 偏壓模式而藉由二電晶體PMOS9、1〇的沒極輸出二第二偏 壓電流I.B2。該第-、二差動電路B1、B2和該共模偏壓電 路C該更將起阻抗作用而根據該第—差動電流⑷產生該組 12 201145813 差動輸出電壓Vo+、Vo-。As shown in FIG. 6, a second preferred embodiment of the operational amplifier of the present invention is adapted to receive a first set of differential input voltages Vinl+, Vin and a second set of differential inputs (4) Vin2+, Vin2_, and to amplify A set of differential output voltages Vo+, Vo- is output. The operational amplifier includes: a DC bias circuit D, a first differential circuit B1', a H circuit B2, a switching device τ, a gain circuit G, a common mode feedback circuit CF, and a common mode bias voltage. Road c. The gain circuit G is connected to the first dynamic circuit βΐ and the second differential circuit B2 via the switching device. The DC bias circuit D is for generating a DC-first bias current IB1 and includes a tenth-transistor PM〇Su having a source electrically connected to the DC voltage VDD. A gate electrically connected to a dust-dusting voltage Vbp, and a gate electrically outputting the first partial current ΐβι. The first differential circuit B1 is coupled to the DC bias voltage through the tangent τ > ^^^, and is used to convert the received M into a current, a solar PMOS1 and a second transistor pM(10). The two crystals [body] 11 201145813 PMOS1, 2 respectively have a gate, a source and a drain. The second differential circuit is coupled to the DC bias circuit through the switching device, and is configured to convert the received voltage into a current, and includes a ninth transistor PMOS9 and a tenth transistor pM〇Si Hey. The two transistors PMOS 9, 10 have a gate, a source and a drain, respectively. The switching device T is configured to switchably transmit the first set of differential voltages or bias voltages M Vbp to the gates of the two transistors PM (10), 2, and to switch the second set of differential voltages or the biases Press the voltage to the gate of pM〇s9'. Preferably, the first and second sets of differential voltages of this example are the same. It is worth noting that when the switching device τ delivers the first set of differential voltages to the gates of one of the transistors PM0S1, 2, the bias voltage is delivered to the gates of the transistors PM0S9, 1G. When the switching device transmits the bias voltage Vbp to the gates of the two transistors PMOS 1, 2, the second set of differential voltages are transferred to the gates of the PMOS 9, 1 。. Each of the differential circuits B1 and B2 operates in a differential mode or a bias mode because the received signals are different. The detailed action situation is explained below. Referring to FIG. 7', when the two transistors PM〇sl and w are respectively received by the first group of differential voltages vinl+ and Vinl', the differential circuit B1 operates in the differential mode by the two transistors PMOS1. The drain output of 2 is the first differential current idi of the alternating current. At this time, since the gates of the two transistors pM〇S9 and ι〇 respectively receive the bias voltage Vbp', the second differential circuit B2 operates in the bias mode and the second transistor PMOS9, 1〇 Two second bias currents I.B2 are output. The first and second differential circuits B1, B2 and the common mode bias circuit C will further act as an impedance to generate the set of 12 201145813 differential output voltages Vo+, Vo- based on the first differential current (4).

參閱圖8,反之,當二電晶體PMOS1、2的閘極分別收 到偏壓電壓Vbp,第一差動電路B1會操作於偏壓模式而藉 由二電晶體PMOS1、2的汲極輸出二第三偏壓電流IB3。此 時,由於二電晶體PMOS9、10的閘極分別接收該第二組差 動電壓Vin2+、Vin2-,所以第二差動電路B2會操作於差動 模式而藉由PMOS9、10的汲極輸出該第二差動電流id2。 該第一、二差動電路B1、B2和該共模偏壓電路C該更將起 阻抗作用而根據該第二差動電流id2產生該組差動輸出電壓 Vo+ ' Vo- ° 該增益電路G電連接於該共模偏壓電路C和該切換裝 置T,且提供一增益以將來自該第一、二差動電路B1、B2 和該共模偏壓電路C的阻抗作用進行放大,以增加該組差 動輸出電壓Vo+、Vo-的幅值。 回歸參閱圖 6,共模回授(common-mode feedback, CMFB)電路CF,偵測該組差動輸出電壓Vo+、Vo-,而送出 一期望將該組差動輸出電壓的共模值調整至一預設值的共 模控制電壓VCMFB,又此電路的詳細做法可參考「D. Senderowicz, S. Dreyer, J. II. Huggins, C. F. Rahim, and C. A. Laber,” A family of differential NMOS analog circuits for a PCM codes filter chip,” IEEE J. Solid-State Circuits, vol. SC-17,Dec.1982,pp. 1014-1023」、「R. Castello and P. R. Gray, “A high-performance micropower switched-capacitor filter,” IEEE J. Solid-State Circuits, vol. SC-20, no. 6, Dec^.i 13 201145813 1985, pp.1122-1132」,但不限於此文獻所述。 共模偏壓電路C,用以接收該共模控制電壓,以 將該組差動輸出電M VQ+、VG_的平均值維持於—預設值。 再者,詳細來說,本例之增益電路G的實施態樣是: 包括-第五、六電晶體麵〇S5、6、一第七、八電晶體 PM〇S7、8和四個放大單& G1〜G4。其中,該四個放大單 元G1~G4的輸入端分別電連接於該等電晶體顧〇55、6、Referring to FIG. 8, on the other hand, when the gates of the two transistors PMOS1 and 2 respectively receive the bias voltage Vbp, the first differential circuit B1 operates in the bias mode and the drain output of the two transistors PMOS1, 2 is two. The third bias current IB3. At this time, since the gates of the two transistors PMOS9, 10 respectively receive the second set of differential voltages Vin2+, Vin2-, the second differential circuit B2 operates in the differential mode and outputs the drains of the PMOSs 9, 10 The second differential current id2. The first and second differential circuits B1, B2 and the common mode bias circuit C will further act as an impedance to generate the set of differential output voltages Vo+ ' Vo- ° according to the second differential current id2. G is electrically coupled to the common mode bias circuit C and the switching device T, and provides a gain to amplify impedance effects from the first and second differential circuits B1, B2 and the common mode bias circuit C To increase the amplitude of the set of differential output voltages Vo+, Vo-. Referring back to FIG. 6, a common-mode feedback (CMFB) circuit CF detects the set of differential output voltages Vo+, Vo-, and sends a desired common mode value of the set of differential output voltages to A preset value of the common mode control voltage VCMFB, and the detailed description of this circuit can be found in "D. Senderowicz, S. Dreyer, J. II. Huggins, CF Rahim, and CA Laber," A family of differential NMOS analog circuits for a PCM codes filter chip," IEEE J. Solid-State Circuits, vol. SC-17, Dec. 1982, pp. 1014-1023", "R. Castello and PR Gray, "A high-performance micropower switched-capacitor filter , IEEE J. Solid-State Circuits, vol. SC-20, no. 6, Dec..i 13 201145813 1985, pp. 1122-1132", but is not limited to this document. The common mode bias circuit C is configured to receive the common mode control voltage to maintain an average value of the set of differential output powers M VQ+ and VG_ at a preset value. Furthermore, in detail, the implementation of the gain circuit G of this example is: including - fifth, sixth transistor face 〇S5, 6, a seventh, eight transistor PM 〇 S7, 8 and four amplification orders & G1~G4. The input ends of the four amplification units G1 G G4 are electrically connected to the transistors 55, 6, respectively.

PM〇S7'8的源極,且四個放大單^⑴⑽的輸出端分別 電連接於該等電晶體NM0S5、6、PM〇S7、8的閘極。二電 晶體PM〇S7、8的沒極分別電連接於該二電晶體麵⑽、 6的汲極’且輸出該組差動輸出電壓ν〇·、v〇+。 而本例之切換裝置T的實施態樣是:包括電連接第一 差動電路Μ的六個第一開關S1和六個第二開關以,且包 括電連接第二差動電路B2的六個第一開關si和六個第二 開關S2。每一開關皆具有一第一端、—第二端和一控制端 ’且各控制端受㈣使相關的第—端和第:端於導通與不 導通之間切換。The source of the PM 〇 S7'8, and the outputs of the four amplifiers (1) (10) are electrically connected to the gates of the transistors NM0S5, 6, PM 〇 S7, 8, respectively. The small electrodes of the two transistors PM〇S7 and 8 are electrically connected to the drains of the two crystal faces (10) and 6, respectively, and output the set of differential output voltages ν〇·, v〇+. The implementation of the switching device T of the present example is: six first switches S1 and six second switches including the first differential circuit 电 electrically connected, and six electrically connected second differential circuits B2 The first switch si and the six second switches S2. Each switch has a first end, a second end and a control end and each control terminal is (4) switched between the associated first end and the third end between conducting and non-conducting.

電連接第-差動電路B1的該六第一開M S1的其中之 二,會藉由各自的第-端分別接收該第-組差動㈣+ 、Vml- ’且藉由各自的第二端分別電連接該二電晶體 PMOS1、2的閘極。 電連接第一差動電路B1的該六第一開關S1的其中之 另二,會藉由各自的第一端分別電連接於該二電晶體 PMOS1、2的源極,且藉由各自的第二端分別電連接於該電 14 201145813 晶體PMOS11的汲極。 電連接第一差動電路B1的該六第一開關S1的剩餘之 二,會藉由各自的第一端分別電連接於該二電晶體NM〇S5 ' 6的源極,且藉由各自的第二端分別電連接該二電晶體 PM0S1、2的汲極。Two of the six first openings M S1 electrically connected to the first-differential circuit B1 receive the first-group differential (four)+, Vml-' by respective first ends and by respective second The terminals are electrically connected to the gates of the two transistors PMOS1, 2, respectively. The other two of the six first switches S1 electrically connected to the first differential circuit B1 are electrically connected to the sources of the two transistors PMOS1 and 2 by respective first ends, and by respective The two ends are electrically connected to the drain of the circuit 14 201145813 crystal PMOS11, respectively. The remaining two of the six first switches S1 electrically connected to the first differential circuit B1 are electrically connected to the sources of the two transistors NM〇S5'6 by respective first ends, and by respective The second ends are electrically connected to the drains of the two transistors PM0S1, 2, respectively.

電連接第一差動電路B1的該六個第二開關S2的其中 之一,會藉由各自的第一端分別接收偏壓電壓Vbp,且藉由 各自的第二端分別電連接該二電晶體p M 〇 s丨、2的閘極: 電連接第一差動電路B1的該六個第二開關S2的其中 之另- ’會藉由各自的第一端分別電連接於該二電晶體 PM0S1、2的源極,且藉由各自的第:端分別電連接於該直 流電壓VDD。 友切电峪的該六個第 之二’會藉由各自的第一端分別電連接於該二電晶體 PMOS7 8的源極’且藉由各自的第二端分別電連接於該二 電晶體PMOS1、2的汲極。 、° 一 另―方面’電連接第二差動電路Β2的該六 S1的其中之二,會藉由夂ή从结 网關 — 自的第一端分別接收該偏壓電壓One of the six second switches S2 electrically connected to the first differential circuit B1 receives the bias voltage Vbp by the respective first ends, and electrically connects the two terminals by the respective second ends. a gate of the crystal p M 〇s丨, 2: the other of the six second switches S2 electrically connected to the first differential circuit B1 is electrically connected to the two transistors by respective first ends The sources of PM0S1 and 2 are electrically connected to the DC voltage VDD by respective first ends. The six seconds of the switch are electrically connected to the source of the two transistors PMOS 7 8 by respective first ends and electrically connected to the two transistors by respective second ends. The drain of PMOS 1, 2. And two of the six S1s electrically connected to the second differential circuit Β2, respectively, receive the bias voltage by the first terminal from the junction gateway.

Vbp ’且猎由各自的第-媳八 柒刀別電連接該二電晶體PMOS9 ' 10的閘極。 y 電連接第二差動雷技 產動電路B2的該六個第一開關 之另二’會藉由各自的坌 ^ v 、甲 自的苐一端分別電連接於該二 PMOS9、10的源極,且 玉日日體 日由各自的第一端分別電連接於兮 直流電壓VDD。 电逐接於該 15 201145813 電連接第二差動電路B2的該六個第—開關si的剩餘 之-,會藉由各自的第一端分別電連接於該二電晶體 圃7、8的源極’且藉由各自的第二端分別電連接該二電 晶體PMOS9、1〇的汲極。 一爾第二差動電路B2的該六個第二開關幻的其中 之一’會猎由各自的第一端分別接收該第二差動電壓Vin2+ 、Vni2- ’且藉由各自的第二端分別電連接該二電晶體 PMOS9、10的閘極。 電連接第二差動電路B2的該六個第二開關s2的其中 之另- ’會藉由各自的第一端分別電連接於該二電晶體 PMOS9、H)的源極,且藉由各自的第:端分別電連接於該 電晶體PMOS11的汲極。 電連接第二差動電路B2的該六個第二開關Μ的剩餘 之二’會藉由各自的第一端分別電連接於該二電晶體 NMOS5、6的源極,且藉由各自的第二端分別電連接該二 電晶體PMOS9、10的没極。 該切換裝置T根據一控制信號來控制,使得所有第— 開關S1同步導通或不導通,也使得所有第二開關S2同步 導通或不導通。且值得注意的是,第—、二開關s i、S2的 導通期間不會互相重疊(overlap)。 如此,當所有第一開關S1導通而所有第二開關S2不 導通時,則第一差動電路B1操作於差動模式,第二差動電 路B2操作於偏壓模式。當所有第一開關si不導通而所有 第二開關S2導通時,則第一差動電路Bl操作於偏壓模式 16 201145813 ,第二差動電路B2操作於差動模式。 此外,該共模偏壓電路C的實施態樣是:該共模偏壓 電路C電連接於該增益電路G和該共模回授電路CF,且透 過切換裝置T耦接到該第一、二差動電路B1、B2。 該共模偏壓電路C包括一 NMOS3、4。該二電晶體 NMOS3、4的閘極接收來自該共模回授電路CF的該共模控 制電壓 VcMFB J 該二電晶體NMOS3、4的源極電連接於地 ,該NMOS3、4的汲極分別電連接於該二電晶體NMOS5、 ^ 6的源極。 因本實施例使用由該第一、二差動電路B1、B2、切換 裝置T和該增益電路G所構成的折疊式串疊型(folded-cascode)架構,相較於先前技術,可得到較大的輸出振幅。 本實施例中的第三〜第六電晶體NMOS3~6是一 N型金 屬氧化物半導體場效電晶體(NMOS),而第一、第二、第七 〜十一電晶體PMOS1、2、7~11是一 P型金屬氧化物半導體 場效電晶體(PM0S)。 • 又如圖9所示,為第二較佳實施例的變形,其中差別 在於: 沒有該增益電路G,又此變形的電路操作與該第二較佳 實施例類似,故不再重述。 <第三較佳實施例> 如圖10所示,與第二較佳實施例的差別為將NM0S改 成PM0S,而將PM0S改成NMOS,其中,該第三、四電晶 體PMOS3、4的源極改成電連接於一直流電壓VDD,而氣 17 201145813 第十一電晶體NMOS11的源極改成電連接於地,電連接於 第一差動電路B1的部分第二開關S2之第二端改電連接於 地,電連接於第二差動電路B2的部分第一開關S1之第二 端改電連接於地’其餘部分因其連接關係與操作類似,故 不再重述。 又如圖11所示,為第三較佳實施例的變形,其中差別 在於: 沒有該增益電路G,又此變形的電路操作與該第三較佳 實施例類似,故不再重述。 又上述所有實施例,不限於用金屬氧化物半導體場效 電晶體(MOS)實現,也可改成雙載子接面電晶體(bjt)實現 〇 练上所述,將本發明之較佳實施例應用於類比/數位轉 換裝置之共旱運算放大器的架構中具有以下優點: 1_藉由該第一、二差動電路A1、A2或B1' B2切換於 差動模式和偏壓模式中,可消除殘值記憶效應。 2.相較於先前技術,本發明的差動輸出電壓之振幅較大籲 因此可合忍較大的雜訊,又因為雜訊正比於②(k :波 故曼常數’ T:絕對溫度,C:電容值),所以本發^月所推動 的電容大小就可以降低’如果不需要推動太大的電容就 可以把MOS大小縮小,使總面積下降,進而減少成本。 3·更因為可容忍較大的雜訊,於供應較小的直流電壓即 I達到與先前技術相同的信號雜訊比(SNR)’因此,可減少 功率消耗。 18 201145813 惟以上所述者’僅為本發 能以此限定本發明實施之範圍 範圍及發明說明内容所作之簡 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 月之較佳貫施例而已,當不 ,即大凡依本發明申請專利 單的等效變化與修飾,皆仍 圖1疋習知運算放大器的電路圖;Vbp' and the gates of the second transistor PMOS9'10 are electrically connected by their respective first-eighth knives. y electrically connecting the other two of the six first switches of the second differential lightning performance circuit B2 to be electrically connected to the sources of the two PMOSs 9, 10 by respective 苐^, And the jade day is electrically connected to the 兮DC voltage VDD by the respective first ends. The remaining ones of the six first switches si electrically connected to the second differential circuit B2 are electrically connected to the sources of the two transistors 、7, 8 by respective first ends. The poles are electrically connected to the drains of the two transistors PMOS 9, 1 , respectively, by respective second ends. One of the six second switches of the second differential circuit B2 is hunted by the respective first ends to receive the second differential voltages Vin2+, Vni2-' and by respective second ends The gates of the two transistors PMOS 9, 10 are electrically connected, respectively. The other of the six second switches s2 electrically connected to the second differential circuit B2 is electrically connected to the sources of the two transistors PMOS9, H by respective first ends, and by respective The first end is electrically connected to the drain of the transistor PMOS11, respectively. The remaining two of the six second switches 电 electrically connected to the second differential circuit B2 are electrically connected to the sources of the two transistors NMOS 5, 6 respectively by the respective first ends, and by respective The two ends are electrically connected to the poles of the two transistors PMOS 9, 10, respectively. The switching device T is controlled according to a control signal such that all of the first switches S1 are turned on or off synchronously, and all of the second switches S2 are simultaneously turned on or off. It is also worth noting that the conduction periods of the first and second switches s i and S2 do not overlap each other. Thus, when all of the first switches S1 are turned on and all of the second switches S2 are not turned on, the first differential circuit B1 operates in the differential mode, and the second differential circuit B2 operates in the bias mode. When all of the first switches si are not turned on and all of the second switches S2 are turned on, the first differential circuit B1 operates in the bias mode 16 201145813 and the second differential circuit B2 operates in the differential mode. In addition, the common mode bias circuit C is electrically connected to the gain circuit G and the common mode feedback circuit CF, and coupled to the first through the switching device T. One or two differential circuits B1, B2. The common mode bias circuit C includes an NMOS 3, 4. The gates of the two transistors NMOS3, 4 receive the common mode control voltage VcMFB J from the common mode feedback circuit CF. The sources of the two transistors NMOS3, 4 are electrically connected to the ground, and the drains of the NMOSs 3 and 4 are respectively Electrically connected to the sources of the two transistors NMOS5, ^6. Since the present embodiment uses a folded-cascode architecture composed of the first and second differential circuits B1 and B2, the switching device T, and the gain circuit G, compared with the prior art, Large output amplitude. The third to sixth transistors NMOS 3 to 6 in this embodiment are an N-type metal oxide semiconductor field effect transistor (NMOS), and the first, second, seventh to eleven transistors PMOS 1, 2, 7 ~11 is a P-type metal oxide semiconductor field effect transistor (PM0S). Further, as shown in Fig. 9, a modification of the second preferred embodiment, wherein the difference is that the circuit operation without the gain circuit G is similar to that of the second preferred embodiment and will not be described again. <Third Preferred Embodiment> As shown in FIG. 10, the difference from the second preferred embodiment is that the NMOS is changed to PMOS and the PMOS is changed to NMOS, wherein the third and fourth transistors PMOS3, The source of 4 is electrically connected to the DC voltage VDD, and the source of the gas 17 201145813 eleventh transistor NMOS 11 is electrically connected to ground, and is electrically connected to a portion of the second switch S2 of the first differential circuit B1. The second end is electrically connected to the ground, and the second end of the first switch S1 electrically connected to the second differential circuit B2 is electrically connected to the ground. The rest of the switch is similar to the operation because of its connection relationship, and therefore will not be described again. Further, as shown in Fig. 11, a modification of the third preferred embodiment, wherein the difference is that the circuit operation without the gain circuit G is similar to that of the third preferred embodiment and will not be described again. Furthermore, all the above embodiments are not limited to being implemented by a metal oxide semiconductor field effect transistor (MOS), but may also be modified into a double carrier junction transistor (bjt) to achieve the training, and the preferred embodiment of the present invention. The example has the following advantages in the architecture of the co-occurrence operational amplifier of the analog/digital conversion device: 1_ switching between the differential mode and the bias mode by the first and second differential circuits A1, A2 or B1' B2, Can eliminate the residual memory effect. 2. Compared with the prior art, the amplitude of the differential output voltage of the present invention is large, so that it can withstand a large amount of noise, and because the noise is proportional to 2 (k: waveman constant 'T: absolute temperature, C: Capacitance value), so the size of the capacitor pushed by this method can be reduced. 'If you don't need to push too much capacitance, you can reduce the size of the MOS, so that the total area is reduced, and the cost is reduced. 3. Moreover, because of the large noise that can be tolerated, the supply of a smaller DC voltage, i, achieves the same signal-to-noise ratio (SNR) as in the prior art. Therefore, power consumption can be reduced. 18 201145813 The above description is only intended to limit the scope of the invention and the scope of the invention. [Simple description of the scheme] The best example of the month is the case. If not, the equivalent change and modification of the patent application form according to the present invention are still shown in the circuit diagram of the conventional operational amplifier.

圖2是本發明第一較佳實施例的電路 圖3是該第一較佳實施例輸出第一 圖; 差動電流的電路 圖 電流的電路圖 圖4是該第一較佳實施例輸出第二差動 圖5是該第—較佳實施例變形的電路圖; 圖6是本發明第二較佳實施例的電路圖; • θ 〇第—較佳貫施例輸出第一差動電流的電路圖 Θ β。第一較佳貫施例輸出第二差動電流的電路圖 圖9是該第二較佳實施例變形的電路圖; •疋本發明第二較佳實施例的電路圖;及 圖11疋該第二較佳實施例變形的電路圖。 19 201145813 【主要元件符號說明】 A1 ~2.....第一、二差動電路 T..........切換電路 S1〜2 ••…第一、二開關 G..........增益電路 G1-4····.放大單元 NMOS1〜2第一、二電晶體 NMOS7~8第七、八電晶體 PMOS3〜6第三~六電晶體 D..........直流偏壓電路 C..........共模偏壓電路 CF........共模回授電路 B1-2 ••…第一、二差動電路 PMOSl~2第一、二電晶體 PMOS7-11第七〜十一電晶體 NMOS3〜6第三〜六電晶體 202 is a circuit diagram of the first preferred embodiment of the present invention. FIG. 3 is a first diagram of the output of the first preferred embodiment. FIG. 4 is a circuit diagram of the current of the differential current. FIG. 4 is a second differential output of the first preferred embodiment. Figure 5 is a circuit diagram of a modification of the first preferred embodiment; Figure 6 is a circuit diagram of a second preferred embodiment of the present invention; • θ 〇 - the preferred embodiment of the circuit diagram Θ β for outputting the first differential current. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 9 is a circuit diagram showing a modification of the second preferred embodiment; FIG. 9 is a circuit diagram of a second preferred embodiment of the present invention; and FIG. A circuit diagram of a preferred embodiment variant. 19 201145813 [Description of main component symbols] A1 ~2.....first and second differential circuits T..........switching circuits S1~2 ••...first and second switches G.. ........Gain circuit G1-4····. Amplifier unit NMOS1~2 first, two transistors NMOS7~8 seventh, eight transistors PMOS3~6 third~six transistor D.. ........DC bias circuit C..........Common mode bias circuit CF........Common mode feedback circuit B1-2 ••... First and second differential circuits PMOS1~2 first and second transistors PMOS7-11 seventh to eleven transistors NMOS3~6 third to sixth transistors 20

Claims (1)

201145813 七、申請專利範圍·· !· 一種運算放大器,包含: —第一差動電路,電連接於地; 第一差動電路,電連接於一直流電壓和 一 動電路之間;及 差 一切換裝置,電連接該第―、二差動電路,且該切 換裝置選擇性地使各差動電路操作於一差動模式; 其中,當該第一差動電路操作於一差動模式,會根 據第一組差動電壓輸出一第一差動電流,且該第一、 差動電路更將起阻抗作用而根據該第一差動電流產生 一組差動輸出電壓; 當該第二差動電路操作於該差動模式,會根據一第 一組差動電壓輸出一第二差動電流,且該第一、二差動 電路更將起阻抗作用而根據該第二差動電流產生該組差 動輸出電壓。 2.依據申請專利範圍第i項所述之運算放大器,其中: 該第一差動電路包括一第一電晶體和一第二電晶體 ’該第一、二電晶體分別具有一閘極、一汲極和一電連 接於地的源極; 該第二差動電路包括一第三電晶體和一第四電晶體 ’該第三、四電晶體分別具有一閘極、一汲極和一電連 接於該直流電壓的源極,其中,該該第一、二電晶體的 沒極分別電連接於該該第三、四電晶體的没極; 當該切換裝置傳遞該第一組差動電壓到該第一、二[ 21 201145813 電晶體的閘極且傳遞該第二 二偏壓電壓到該第三201145813 VII. Patent application scope ··· An operational amplifier comprising: - a first differential circuit electrically connected to ground; a first differential circuit electrically connected between a DC voltage and a moving circuit; and a difference switch The device is electrically connected to the first and second differential circuits, and the switching device selectively operates the differential circuits in a differential mode; wherein, when the first differential circuit operates in a differential mode, The first set of differential voltages outputs a first differential current, and the first, differential circuit further acts as an impedance to generate a set of differential output voltages according to the first differential current; when the second differential circuit Operating in the differential mode, a second differential current is output according to a first set of differential voltages, and the first and second differential circuits further function as impedances to generate the set of differences according to the second differential currents. Dynamic output voltage. 2. The operational amplifier according to claim i, wherein: the first differential circuit comprises a first transistor and a second transistor, wherein the first and second transistors respectively have a gate and a gate a drain and a source electrically connected to the ground; the second differential circuit includes a third transistor and a fourth transistor. The third and fourth transistors respectively have a gate, a drain and an electric a source connected to the DC voltage, wherein the first and second transistors are electrically connected to the third and fourth transistors, respectively; when the switching device transmits the first set of differential voltages To the first and second [ 21 201145813 transistor gates and pass the second two bias voltages to the third 的汲極輸出該第一差動電流, 該第二、四電晶體的汲極輸出該二偏壓電流; 、四電晶The drain of the second output of the first differential current, the drain of the second and fourth transistors outputs the two bias currents; 田該切換裝置傳遞該第一偏壓電壓到該第一、_ 晶體的閘極且傳遞該第 二組差動電壓到該第三、四電晶The switching device transmits the first bias voltage to the gate of the first, _ crystal and transmits the second set of differential voltages to the third and fourth transistors 第二、四電晶體的汲極輸出該第二差動電流。 3. 依據申請專利範圍第丨項所述之運算放大器,更包含: 增:a電路,電連接於該第一 '二差動電路之間, 且提供一增益以將來自該第一、二差動電路的阻抗作用 進行放大,以增加該組差動輸出電壓的幅值。 4. 依據申请專利範圍第3項所述之運算放大器,其中, 該切換裝置使得各差動電路切換於該差動模式與一 偏壓模式間; 當該切換裝置使該第一差動電路操作於該差動模式 ,會使該第二差動電路操作於該偏壓模式而根據一第二 偏壓電壓產生二偏壓電流; 當該切換裝置使該第一差動電路操作於該偏壓模式 ’會使該第二差動電路操作於該差動模式,且該第一差 動電路會根據一第一偏壓電壓產生該二偏壓電流。 5. 依據申請專利範圍第4項所述之運算放大器,其中: 該第一差動電路包括一第一電晶體和一第二電晶體 201145813 ,該第一、二電晶體分別具有一閘極、一汲極和一電連 接於地的源極; 該第二差動電路包括一第三電晶體和一第四電晶體 ,該第二、四電晶體分別具有一閘極、一汲極和一電連 接於該直流電壓的源極; 當該切換裝置傳遞該第一組差動電壓到該第―、二 電晶體的閘極且傳遞該第二偏壓電壓到該第三、四電晶 體的閘極,則該第一差動電路會藉自該第一、二電晶體 的汲極輸出該第一差動電流,且該第二差動電路會藉由 該第三、四電晶體的汲極輸出該二偏壓電流; 當該切換裝置傳遞該第一偏壓電壓到該第一、二 晶體的閘極且傳遞該第二組差動電壓到該第三曰 體的閘極,則該第-差動電路會藉由該第-、二電晶 的及極產生該二偏壓電流,且該第二差動電路會藉由該 6第二、四電晶體的汲極輸出該第二差動電流。 Λ .依據申請專利範圍第5項所述之運算放大器,其中 =換裝置包括電連接該第—差動電路的:㈣—= 〜個第二開關,及電連接該第二差動電路的二個 : * 個第-開關’母-開關皆具有一第一端、—第〜 端和-控制端’且各控制端受控制使相 : 二端於導通與不導通之間切換; 、和第 r c 各二Γ該第一差動電路的該二個第一開關,會藉由 的:的第:端分別接收該第一組差動電壓,且藉由各自 、 端刀別電連接該第一、二電晶體的閘極; 23 201145813 電連接該第一差動電路的該二個 各自的第-端分別接收該第一偏麼電壓7::由會藉由 第二端分別電連接該第一、二電晶體的閘極;各自的 電連接該第二差動電路的該二個第 各自的第-端分別接收該第二偏壓電壓,:藉由會藉由 第二端分別電連接該第三、四電晶體的閘極;自的 電連接第二差動電路的該二個第二開關,會藉 自的第一端分別接收該第二組差 ^ |稭由各白的 第二端分別電連接該第三、四電晶體的閘極。 依據申請專利範圍第ό項所述之運算放大 中, 增益電路包括-第五電晶體、一第六電晶體、—第七; 日曰體、一苐八電晶體和四個放大單元; 該四個放大單元的輸入端分別電連接於該第五〜第八 電晶體的源極,且該四個放大單元的輸出端分別電連接 於該第五~第八電晶體的閘極; 四 該第五〜第八電晶體的源極分別電連接於該第= 、一、二電晶體的汲極; 該第七、八電晶體的汲極分別電連接於該第五、丄 電晶體的汲·極’且輸出該組差動輸出電壓。 8.依據申請專利範圍第7項所述之運算放大器,其中,該 第一、二、七、八電晶體是一 Ν型金屬氧化物半導體場 效電晶體; 該第三、四、五、六電晶體是一 Ρ型金屬氧化物半 導體場效電晶體。 24 201145813 9. 一種運算放大器,包含:The drain of the second and fourth transistors outputs the second differential current. 3. The operational amplifier according to claim 2, further comprising: a circuit: electrically connected between the first 'two differential circuits, and providing a gain to be derived from the first and second differences The impedance of the moving circuit is amplified to increase the amplitude of the set of differential output voltages. 4. The operational amplifier according to claim 3, wherein the switching device switches each differential circuit between the differential mode and a bias mode; when the switching device operates the first differential circuit In the differential mode, the second differential circuit is operated in the bias mode to generate a two-bias current according to a second bias voltage; when the switching device operates the first differential circuit to the bias voltage The mode 'will cause the second differential circuit to operate in the differential mode, and the first differential circuit generates the two bias currents according to a first bias voltage. 5. The operational amplifier according to claim 4, wherein: the first differential circuit comprises a first transistor and a second transistor 201145813, wherein the first and second transistors respectively have a gate, a drain and a source electrically connected to the ground; the second differential circuit includes a third transistor and a fourth transistor, the second and fourth transistors respectively having a gate, a drain and a Electrically connected to the source of the DC voltage; when the switching device transmits the first set of differential voltages to the gates of the first and second transistors and transmits the second bias voltage to the third and fourth transistors a first differential circuit that outputs the first differential current from the drains of the first and second transistors, and the second differential circuit passes through the third and fourth transistors The pole outputs the two bias currents; when the switching device transmits the first bias voltage to the gates of the first and second crystals and transmits the second set of differential voltages to the gates of the third body, The first-differential circuit generates the two bias currents by the first and second transistors And the second differential circuit 6 will by the second, four drain electrode of the output transistor of the second differential current. The operational amplifier according to claim 5, wherein the = changing device comprises: (4) -= a second switch electrically connected to the first differential circuit, and two electrically connected to the second differential circuit One: * The first-switch 'mother-switch has a first end, - the first end and the - control end' and each control end is controlled to make the phase: the two ends switch between conduction and non-conduction; Each of the two first switches of the first differential circuit receives the first set of differential voltages by the respective ends of the first differential circuit, and is electrically connected to the first by the respective ends a gate of the second transistor; 23 201145813 electrically connecting the two respective first ends of the first differential circuit to receive the first bias voltage 7: respectively, by electrically connecting the second terminal The gates of the first and second transistors; the respective second ends of the second differential circuits respectively receiving the second bias voltages: respectively, are electrically connected by the second ends The gates of the third and fourth transistors; the two second openings of the second differential circuit electrically connected Off, the first end of the first group receives the second set of differences respectively. The straw is electrically connected to the gates of the third and fourth transistors respectively. According to the operational amplification described in the scope of the patent application, the gain circuit comprises a fifth transistor, a sixth transistor, a seventh; a solar cell, a germanium transistor and four amplifying units; The input ends of the amplifying units are electrically connected to the sources of the fifth to eighth transistors, respectively, and the output ends of the four amplifying units are electrically connected to the gates of the fifth to eighth transistors, respectively; The sources of the fifth to eighth transistors are electrically connected to the drains of the first, first, and second transistors, respectively; the drains of the seventh and eighth transistors are electrically connected to the fifth and second transistors respectively. The pole 'and outputs the set of differential output voltages. 8. The operational amplifier according to claim 7, wherein the first, second, seventh, and eighth transistors are a germanium-type metal oxide semiconductor field effect transistor; the third, fourth, fifth, and sixth The transistor is a germanium-type metal oxide semiconductor field effect transistor. 24 201145813 9. An operational amplifier comprising: 用於產生一呈直流的第一偏壓電 一第一差動電路,耦接該直流偏壓電路; 且該切 一第二差動電路,耦接該直流偏壓電路; 一切換裝置’電連接該第一、二差動電路 換裝置選擇性地使各差動電路操作於一差動模式;及 一共模偏壓電路,電連接該切換裝置; 其中,當該第 一差動電路操作於一差動模式,會透 過該切換裝置耦接該直流偏壓電路以接收該第一偏壓電 流,並根據一第一組差動電壓輸出一第一差動電流,且 該第、一差動電路和該共模偏壓電路該更將起阻抗作 用而根據該第一差動電流產生一組差動輸出電壓; 當該第二差動電路操作於該差動模式,會透過該切 換襄置耦接該直流偏壓電路以接收該第一偏壓電流,並 根據一第二組差動電壓輸出一第二差動電流,且該第一 、二差動電路和該共模偏壓電路該更將起阻抗作用而根 據該第二差動電流產生該組差動輸出電壓;且 δ亥共模偏壓電路會根據一共模控制電壓將該組差動 輸出電壓的平均值維持於一預設值。 10.依據申請專利範圍第9項所述之運算放大器,其中,該 切換裝置使得各差動電路切換於該差動模式與一偏壓模 式間; 當該切換裝置使該第一差動電路操作於該差動模式[s 25 201145813 ,會使該第二差動電路操作於該偏壓模式而根據一偏壓 電壓產生二個第二偏壓電流; 當該切換裝置使該第一差動電路操作於該偏壓模式 ,會使該第二差動電路操作於該差動模式,且該第一差 動電路會根據該偏壓電壓產生二個第三偏壓電流。 11 .依據申清專利範圍第10項所述之運算放大器,其中: 該第一差動電路包括一第一電晶體及一第二電晶體 ,該第一、二電晶體分別具有一閘極、一源極和一汲極a first differential circuit for generating a direct current, coupled to the DC bias circuit; and the second differential circuit coupled to the DC bias circuit; 'Electrically connecting the first and second differential circuit changing devices to selectively operate the differential circuits in a differential mode; and a common mode biasing circuit electrically connecting the switching device; wherein, when the first differential The circuit operates in a differential mode, and the DC bias circuit is coupled to the DC bias circuit to receive the first bias current, and outputs a first differential current according to a first set of differential voltages, and the a differential circuit and the common mode bias circuit further act as an impedance to generate a set of differential output voltages according to the first differential current; when the second differential circuit operates in the differential mode, The DC bias circuit is coupled to receive the first bias current through the switching device, and output a second differential current according to a second set of differential voltages, and the first and second differential circuits and the The common mode bias circuit will further act as an impedance and according to the second difference The moving current generates the set of differential output voltages; and the δ hai common mode bias circuit maintains the average of the set of differential output voltages at a predetermined value according to a common mode control voltage. 10. The operational amplifier according to claim 9, wherein the switching device switches each differential circuit between the differential mode and a bias mode; and when the switching device operates the first differential circuit In the differential mode [s 25 201145813, the second differential circuit is operated in the bias mode to generate two second bias currents according to a bias voltage; when the switching device causes the first differential circuit Operating in the bias mode causes the second differential circuit to operate in the differential mode, and the first differential circuit generates two third bias currents based on the bias voltage. The operational amplifier according to claim 10, wherein: the first differential circuit comprises a first transistor and a second transistor, wherein the first and second transistors respectively have a gate, One source and one bungee 該第二差動電路包括:一第九電晶體及一第十電晶 體,該第九、十電晶體分別具有一閘極、一源極和一汲 極; 該切換裝置用以切換地傳遞該第一組差動電壓或該 偏壓電壓到該第-或第二電晶體的閘極,並用以切換地 傳遞該第二组差動電壓或該偏壓電壓到該第九或第十電 B曰體的閘極’且更切換地傳遞該第一偏Μ冑流到該第一The second differential circuit includes: a ninth transistor and a tenth transistor, the ninth and tenth transistors respectively having a gate, a source and a drain; the switching device is configured to switch the transfer a first set of differential voltages or the bias voltages to the gates of the first or second transistor, and for switchingly transmitting the second set of differential voltages or the bias voltages to the ninth or tenth The gate of the body is 'and the switching of the first bias flow to the first 、一電晶體的源極或該第九、十電晶體的源極; — 、 田該切換裝置傳遞該第一組差動電壓到該第 電晶體的閘極且傳遞該偏壓電屋到該帛九、十電晶體 閘極’該第-差動電路會藉由該第…二電晶體的源 接收該第-㈣電A,且藉由該第―、二電晶體的沒; 輸出該第-差動電流’而該第二差動電路會藉由該第; 、十電晶體的汲極輸出該二第二偏壓電流; 、二電晶體 當該切換裝置傳遞該偏壓電壓到該第一 26 201145813 的閘極且傳遞該第二組差動電壓到該第九、十電晶體的 閘極,該第-差動電路會藉由該第―、二電晶體的没極 輸出該二第三偏壓電流,而該第二差動電路會藉由該第 九、十電晶體的源極接收該第一偏壓電流,且藉由該第 九、十電晶體的汲極輸出該第二差動電流。 12.依據申請專利範圍第u項所述之運算放大器,更包含: 一增益電路,電連接於該共模偏壓電路和該切換裝 置,且提供一增益以將來自該第一、二差動電路和該共 • 模偏壓電路的阻抗作用進行放大,以增加該組差動輸出 電壓的幅值。 13·依據申請專利範圍第12項所述之運算放大器,其中,該 增I電路包括一第五電晶體、一第六電晶體、一第七電 日日體、一第八電晶體和四個放大單元; 該四個放大單元的輸入端分別電連接於該第五〜第八 電晶體的源極,且該四個放大單元的輸出端分別電連接 於該第五〜第八電晶體的閘極;a source of a transistor or a source of the ninth or tenth transistor; wherein the switching device transmits the first set of differential voltages to the gate of the first transistor and transmits the bias to the gate帛9, 10th transistor gate' The first-differential circuit receives the first-(fourth) A by the source of the second transistor, and by the first and second transistors; outputting the first a differential current 'the second differential circuit outputs the second bias current through the drain of the first and ten transistors; and the second transistor transmits the bias voltage to the first a gate of 2011458458 and transmitting the second set of differential voltages to the gates of the ninth and tenth transistors, the first differential circuit outputting the second through the first and second transistors Three bias currents, and the second differential circuit receives the first bias current through the sources of the ninth and tenth transistors, and outputs the second through the drains of the ninth and tenth transistors Differential current. 12. The operational amplifier according to claim 5, further comprising: a gain circuit electrically connected to the common mode bias circuit and the switching device, and providing a gain to receive the first and second differences The impedance of the dynamic circuit and the common mode bias circuit is amplified to increase the amplitude of the set of differential output voltages. The operational amplifier according to claim 12, wherein the increased I circuit comprises a fifth transistor, a sixth transistor, a seventh electric solar cell, an eighth transistor, and four The input ends of the four amplifying units are electrically connected to the sources of the fifth to eighth transistors, respectively, and the output ends of the four amplifying units are electrically connected to the gates of the fifth to eighth transistors, respectively pole; ^ 五、/、電晶體的源極分別電連接於該第三、它 電晶體的汲極,且該第七、八電晶體的源極分別藉由言 切換裝置耦接到該第一、二電晶體的汲極; 該第七 '八電晶體的汲極分別電連接於該第五、^ 電晶體的汲極,且輸出該組差動輸出電壓。 14.依據申請專利範圍第13項所述之運算放大器,其中,髮 直流偏屋電路包括一第十一電晶體,該第十一電晶體肩 有一電連接於一直流電壓的源極、-電連接於該偏塵f 27 201145813 壓的閘極、和一輸出該第一偏壓電流的汲極。 15.依據申請專利範圍第14項所述之運算放大器,其中,該 切換裝置包括電連接該第一差動路的六個第〜 ^個埜_扣 開關和 " 弟一開關,及電連接第二差動電路的六個第—„ 和六個第二開關,每一開關 端 汗關 < 弟二端 —工制端,且各控制端受控制使相關的第—蠕 端於導通與不導通之間切換; — 電連接該第一差動電路的該六第一開關的其中之_ 田藉由各自的第一端分別接收該第一組差 自的苐二端分別電連接該第-、二電晶體的閘極 電連接該第一差動電路的該六第一開關的其中之另 會藉由各自的第一端分別電連接於該第一、二 體的源極’且藉由各自的第二端分別電連接於該第十 電晶體的汲極; /弟十一 電連接該第—差動電路的該六第一開關的剩餘之二 ,會藉由各自的第一端分別電連接於該第五 '六電曰: 错由各自的第二端分別電連接該第一、一 晶體的沒極; 一電 電連接該第-差動電路的該六個第二開關的 會藉由各自的第-端分別接收該偏壓電壓,且 第二端分別電連接該第―、二電晶體的間極,/ 另二電:接該第一差動電路的該六個第二開關的其中之 -’曰藉由各自的第一端分別電連接於該第一、 28 201145813 晶體的源極,且藉由各自 電壓; 的第一鳊刀別電連接於一直流 電連接該第—差動電路的該> 二’會藉由各自的第一端分關的剩餘之 骑沾%技 %刀別電連接於該第七、八電晶 ’且藉由各自的第二端分別電連接於該第一、 二電晶體的汲極; 史按於这第 電連接該第二差動雷政沾—丄 -m欠差動電路的該六個第-開關的其中之 夂白μ 乐&刀別接收该偏壓電壓,且藉由 各自=二端分別電連接該第九、十電晶體的間極; 另接該第一差動電路的該六個第-開關的其中之 ==由各自的第一端分別電連接於該第九、十電 電壓,且糟由各自的第二端分別電連接於該直流 -忒第—差動電路的該六個第-開關的剩餘之 =會糟由各自的第-端分別電連接於該第七、八電晶 體的源極,且藉山久6 藉由各自的第二端分別電連接該第九、十 電日日體的沒極; 二,電連接該第二差動電路的該六個第二開關的其中之 Γ會藉由各自的第一端分別接收該第二差動電遷,且 .曰自的第-端分別電連接該第九、十電晶體的閘極 9 -電連接第二差動電路的該六個第二開關的其中之另 :’會藉由各自的第一端分別電連接於該第%、十電晶 的源極,且藉由各自的第二端分別電連接於該第十一, 29 201145813 電晶體的及極。 第一差動電路的該六個第二開關的剩餘之 -,^ μ j, ^ ,7rj m ^ m m 曰B - a自的第一端分別電連接於該第五、六電 體的源極,且藉由各白的笙 电 错由各自的第二端分別電連接該第九、 電晶體的沒極。 16.依射請專利範圍第15項所述之運算放大H,其中,該 共模偏壓電路包括一第三電晶體和一第四電晶體;^, /, the source of the transistor is electrically connected to the third, the drain of the transistor, and the sources of the seventh and eighth transistors are respectively coupled to the first and second by means of a switching device The drain of the transistor; the drain of the seventh 'eight transistor is electrically connected to the drain of the fifth transistor, respectively, and outputs the set of differential output voltages. 14. The operational amplifier according to claim 13, wherein the DC-DC partial circuit comprises an eleventh transistor, the eleventh transistor shoulder having a source electrically connected to the DC voltage, - a gate connected to the biased f 27 201145813 and a drain outputting the first bias current. 15. The operational amplifier according to claim 14, wherein the switching device comprises six first-to-negative-switches electrically connected to the first differential path, and a switch, and an electrical connection. The sixth differential of the second differential circuit and the six second switches, each of which is closed to the second end of the second terminal, and the control terminals are controlled so that the associated first-throw is turned on and Switching between non-conducting; - electrically connecting the first of the six first switches of the first differential circuit to each other by the respective first ends respectively receiving the first set of differentials from the second end - the gate of the second transistor is electrically connected to the first switch of the first differential circuit, and the first switch is electrically connected to the source of the first and second bodies respectively by the respective first ends Electrically connected to the drain of the tenth transistor by the respective second ends; the remaining two of the six first switches electrically connected to the first differential circuit are respectively connected by the respective first ends Electrically connected to the fifth 'six electric shovel: the fault is electrically connected by the respective second end The first and a crystal are infinite; the six second switches electrically connected to the first differential circuit respectively receive the bias voltage by respective first ends, and the second ends are electrically connected to the second terminal The interpole of the first and second transistors, and the other two of the six second switches connected to the first differential circuit are electrically connected to the first by the respective first ends, 28 201145813 The source of the crystal, and by the respective voltage; the first file is not electrically connected to the current-current connection of the first-differential circuit; the second will be separated by the respective first end The rider is electrically connected to the seventh and eighth electro-crystals and electrically connected to the drains of the first and second transistors respectively by the respective second ends; The two differential switches of the two differential-distributed 丄-m-m under-differential circuits are respectively received by the μ μ 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐The interpole of the nine or ten transistors; the other of the six first switches that are connected to the first differential circuit == The first ends are electrically connected to the ninth and tenth electrical voltages respectively, and the remaining second ends are electrically connected to the remaining ones of the six first-switches of the DC-忒-differential circuit respectively. The respective ends are electrically connected to the sources of the seventh and eighth transistors, respectively, and the second ends of the ninth and tenth solar days are respectively electrically connected by the respective second ends; Second, the two of the six second switches electrically connected to the second differential circuit respectively receive the second differential current by the respective first ends, and the first ends of the respective electrical connections are electrically connected The gates 9 of the ninth and tenth transistors are electrically connected to the six second switches of the second differential circuit: 'will be electrically connected to the first and tenth wires respectively by the respective first ends The source of the crystal is electrically connected to the parallel pole of the eleventh, 29 201145813 transistor by respective second ends. The first ends of the six second switches of the first differential circuit, ^μ j, ^ , 7rj m ^ mm 曰B - a are electrically connected to the sources of the fifth and sixth electric bodies, respectively And the ninth, the transistor of the transistor is electrically connected by the respective second ends by the respective white electrical faults. 16. The operation amplification according to claim 15, wherein the common mode bias circuit comprises a third transistor and a fourth transistor; 該第二、四電晶體的汲極分別電連接於該第五、六 電晶體的源極,該第三、四電晶體的源極分別電連接於 地,該第三、四電晶體的閘極電連接於該共模控制電壓 17·依據申請專利範圍第16項所述之運算放大器,其中,該 第二〜第六電晶體是一 N型金屬氧化物半導體場效電晶 體; 該第一、第二、第七~十一電晶體是一 P型金屬氧化 物半導體場效電晶體。 18·依據申請專利範圍第10項所述之運算放大器,其中: 該共模偏壓電路包括一第三電晶體和一第四電晶體 該第三、四電晶體的汲極分別電連接於該第五、六 電晶體的源極’該第三、四電晶體的源極分別電連接於 一直流電壓,該第三、四電晶體的閘極接收該共模控制 電壓; 該直流偏壓電路包括一第Η—電晶體,該第Ί —電 30 201145813 晶體具有一電連接於地的源極、一電連接於該偏壓電壓 的閘極,和一產生該第一偏壓電流的汲極。 19. 依據申請專利範圍第18項所述之運算放大器,其中,該 第二〜第六電晶體是一 P型金屬氧化物半導體場效電晶 體; 該第一、第二、第七~十一電晶體是一 N型金屬氧 化物半導體場效電晶體。 20. 依據申請專利範圍第9項所述之運算放大器,更包含: ® 一共模回授電路,偵測該組差動輸出電壓,而送出 期望將該組差動輸出電麼的共模值調整至該預設值的該 共模控制電壓。 31The drains of the second and fourth transistors are electrically connected to the sources of the fifth and sixth transistors, respectively, and the sources of the third and fourth transistors are electrically connected to the ground respectively, and the gates of the third and fourth transistors are respectively The operational amplifier of the sixth aspect of the invention, wherein the second to sixth transistors are an N-type metal oxide semiconductor field effect transistor; The second, seventh to eleven transistors are a P-type metal oxide semiconductor field effect transistor. The operational amplifier according to claim 10, wherein: the common mode bias circuit comprises a third transistor and a fourth transistor, wherein the drains of the third and fourth transistors are electrically connected to The sources of the fifth and sixth transistors 'the third and fourth transistors are respectively electrically connected to the DC voltage, and the gates of the third and fourth transistors receive the common mode control voltage; the DC bias The circuit includes a second-electrode, the third-electrode 30 201145813 crystal having a source electrically connected to the ground, a gate electrically connected to the bias voltage, and a first bias current generated Bungee jumping. 19. The operational amplifier according to claim 18, wherein the second to sixth transistors are a P-type metal oxide semiconductor field effect transistor; the first, second, seventh to eleventh The transistor is an N-type metal oxide semiconductor field effect transistor. 20. The operational amplifier according to claim 9 of the patent application, further comprising: a common mode feedback circuit for detecting the differential output voltage of the group and sending a common mode adjustment for which the differential output is desired to be output. The common mode control voltage to the preset value. 31
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TWI696347B (en) * 2019-05-02 2020-06-11 九暘電子股份有限公司 Common mode voltage level shifting and locking circuit

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US6759898B1 (en) * 2003-01-24 2004-07-06 Ion E. Opris Dual input differential amplifier
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Publication number Priority date Publication date Assignee Title
TWI696347B (en) * 2019-05-02 2020-06-11 九暘電子股份有限公司 Common mode voltage level shifting and locking circuit
US10972079B2 (en) 2019-05-02 2021-04-06 Ic Plus Corp. Common mode voltage level shifting and locking circuit

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