TW201145813A - Operational amplifier - Google Patents
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201145813 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種放大器,特別是指一種運算放大 器。 【先前技術】 習知的一種管線式類比/數位轉換裝置以共享運算放大 器的架構,將一輸入電壓轉換成一相對應的數位信號,來 節省功率和面積的成本。 但是上述類比/數位轉換裝置的缺點為:所共享運算放 大器的輸入差動對的閘極電容因.前一次的電荷注入,會留 下殘值記憶效應,而降低整體的效能。 如圖1所示,美國專利第6,759 898 B1號,,dual input201145813 VI. Description of the Invention: [Technical Field] The present invention relates to an amplifier, and more particularly to an operational amplifier. [Prior Art] A conventional pipeline analog/digital conversion apparatus converts an input voltage into a corresponding digital signal by a shared arithmetic amplifier structure to save power and area cost. However, the above analog/digital conversion device has the disadvantage that the gate capacitance of the input differential pair of the shared operational amplifier is such that the previous charge injection leaves the residual memory effect and reduces the overall efficiency. As shown in Figure 1, U.S. Patent No. 6,759 898 B1, dual input
的目的。 I點為:使用尾電流源200,將 而降低電路可容忍雜訊的大小 但是上述運算放大器的缺點為 限制差動輸出信號的振幅, 【發明内容】 即在提供一種避免限制差動輸 因此’本發明之目的, 201145813 出信號的振幅、增加可容忍雜訊及減少功率消耗的運算放 大器。 該運算放大器,包含: 一第一差動電路,電連接於地; 一第二差動電路,電連接於一直流電壓和該第一差動 電路之間;及 一切換裝置,電連接該第一、二差動電路,且該切換 裝置選擇性地使各差動電路操作於一差動模式; 其中,當該第一差動電路操作於一差動模式,會根據 一第一組差動電壓輸出一第一差動電流,且該第一、二差 動電路更將起阻抗作用而根據該第一差動電流產生一組差 動輪出電壓; 當該第二差動電路操作於該差動模式,會根據一第二 組差動電壓輸出一第二差動電流,且該第一、二差動電路 更將起阻抗作用而根據該第二差動電流產生該組差動輸出 電壓。 本發明之另一目的,即在提供另一種運算放大器。 該運算放大器,包含: -直流偏壓電路,用於產生—呈直流的第—偏壓電流 第一差動電路,耦接該直流偏壓電路; 一第二差動電路,耦接該直流偏壓電路; 一切換裝置 裝置 電連接該第一、二差動電路,且該切換 選擇性地使各差動電路操作於 一差動模式;及 5 201145813 一共模偏壓電路,電連接該切換裝置; 其中,當該第一差動電路操作於一差動模式,會耦接 該直流偏壓電路以接收該第一偏壓電流,並根據一第一組 差動電壓輸出-第-差動電流,且該第―、二差動電路和 該共模偏壓電路該更將起阻抗作用而根據該第—差動電流 產生一組差動輸出電壓; 當該第二差動電路操作於該差動模式,會耦接該直流 偏壓電路以接收該第一偏壓電流,並根據一第二組差動電 磨輸出-第二差動電流’且該第―、二差動電路和該共模 偏麼電路該更將起阻抗仙而根據該第二差動電流產生該 組差動輸出電壓;且 ^ 該共模偏壓電路會根據一共模控制電壓將該組差動輸 出電壓的平均值維持於一預設值。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效,在 以下配合參考圖式之三個較佳實施例的詳細說明中,將可 清楚的呈現。 <第一較佳實施例> 如圖2所示,本發明運算放大器之第一較佳實施例, 適用於接收一第一組差動電壓和一第二組差動電壓,並進 行放大以輪出—組差動输出電壓v〇+、v〇·。且該運算放大 窃包含:一第-差動電路A1、-第二差動電路A2、-切換 裝置T,及一增益電路 該第一差動電路A1用於將所接收的電壓轉換成電流, 201145813 且包括一第一電晶體NMOS1和一第二電晶體NM〇S2,該 第一、二電晶體NM〇S 1、2分別具有一閘極、一汲極和一 電連接於地的源極。 該第二差動電路A2用於將所接收的電壓轉換成電流, 且包括一第三電晶體PM0S3和一第四電晶體PM〇S4,該第 三、四電晶體PM0S3、4分別具有一閘極、一汲極和一電 連接於一直流電壓VDD的源極。the goal of. Point I is: using the tail current source 200, which reduces the size of the noise that can be tolerated by the circuit. However, the above operational amplifier has the disadvantage of limiting the amplitude of the differential output signal. [Invention] It is to provide a way to avoid limiting the differential input. For the purpose of the present invention, 201145813 increases the amplitude of the signal, increases the operational amplifier that can tolerate noise and reduce power consumption. The operational amplifier includes: a first differential circuit electrically connected to the ground; a second differential circuit electrically connected between the DC voltage and the first differential circuit; and a switching device electrically connected to the first One or two differential circuits, and the switching device selectively operates the differential circuits in a differential mode; wherein, when the first differential circuit operates in a differential mode, the differential is based on a first group The voltage outputs a first differential current, and the first and second differential circuits further act as an impedance to generate a set of differential wheeling voltages according to the first differential current; when the second differential circuit operates at the difference In the active mode, a second differential current is output according to a second set of differential voltages, and the first and second differential circuits further function as impedances to generate the set of differential output voltages according to the second differential currents. Another object of the invention is to provide another operational amplifier. The operational amplifier includes: - a DC bias circuit for generating - a first bias current of a DC current, a first differential circuit coupled to the DC bias circuit; and a second differential circuit coupled to the a DC bias circuit; a switching device electrically connecting the first and second differential circuits, and the switching selectively operating the differential circuits in a differential mode; and 5 201145813 a common mode bias circuit, Connecting the switching device; wherein, when the first differential circuit operates in a differential mode, the DC bias circuit is coupled to receive the first bias current, and according to a first set of differential voltage outputs - a first-differential current, and the first and second differential circuits and the common-mode bias circuit further act as an impedance to generate a set of differential output voltages according to the first differential current; The dynamic circuit operates in the differential mode, coupled to the DC bias circuit to receive the first bias current, and according to a second set of differential electric grind output - the second differential current 'and the first, The second differential circuit and the common mode bias circuit will further act as an impedance The second differential current generates the set of differential output voltages; and ^ the common mode bias circuit maintains the average of the set of differential output voltages at a predetermined value based on a common mode control voltage. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the drawings. <First Preferred Embodiment> As shown in FIG. 2, a first preferred embodiment of the operational amplifier of the present invention is adapted to receive a first set of differential voltages and a second set of differential voltages and to amplify Take the wheel-set differential output voltages v〇+, v〇·. And the operation amplification includes: a first-differential circuit A1, a second differential circuit A2, a switching device T, and a gain circuit. The first differential circuit A1 is configured to convert the received voltage into a current. 201145813 includes a first transistor NMOS1 and a second transistor NM〇S2, wherein the first and second transistors NM〇S 1 and 2 respectively have a gate, a drain, and a source electrically connected to the ground. . The second differential circuit A2 is configured to convert the received voltage into a current, and includes a third transistor PM0S3 and a fourth transistor PM〇S4, wherein the third and fourth transistors PM0S3 and 4 respectively have a gate A pole, a drain and a source are electrically connected to the source of the DC voltage VDD.
該切換裝置T則用以切換地傳遞該第一組差動電壓或 一第一偏壓電壓Vbn到第一、二電晶體NM〇sl、2的閘極 ,並用以切換地傳遞該第二組差動電壓或一第二偏壓電壓 Vbp到PMOS3、4的閘極。較佳地,本例的第一、二組差 動電壓不相同,因此於圖式中分別以(Vini+、、 (Vin2+、Vin2-)表示。 〃值得注意的是’當該切換裝置傳遞第一組差動電壓到 第一、二電晶體NMOS1、2 #閘極時,會傳遞第二偏壓電 壓Vbp到第三、四電晶體pM〇S3、4的間極。而當該切換 裝置τ傳遞第—偏壓電壓Vbn到第―、二電晶體麵㈣、 2的閘極時’會傳遞第二組差動電壓到第三、四電晶體 PM0S3、4的閘極。 而各差動電路會因為收到的信號不同 向孫作於The switching device T is configured to switchably transmit the first set of differential voltages or a first bias voltage Vbn to the gates of the first and second transistors NM〇s1, 2, and to switch the second group The differential voltage or a second bias voltage Vbp is applied to the gates of the PMOSs 3, 4. Preferably, the first and second sets of differential voltages of the present example are different, and therefore are represented by (Vini+, (Vin2+, Vin2-) respectively in the figure. 〃 It is worth noting that 'when the switching device transmits the first When the differential voltage reaches the first and second transistors NMOS1, 2# gate, the second bias voltage Vbp is transmitted to the interpoles of the third and fourth transistors pM〇S3, 4. When the switching device τ transmits When the first bias voltage Vbn reaches the gates of the first and second transistors (4) and 2, the second set of differential voltages are transmitted to the gates of the third and fourth transistors PM0S3, 4. The differential circuits will Because the signals received are different to Sun
, ▼…r rj I 動模式或-偏壓模式。詳細作動情形說明如下 :二圖3,當第一、二電晶體難⑽、2的閘極们 作於“組差動電壓Vhll+、¥ ’第一差動電路A1會击 ;動模式而藉由該第一、二電晶體蘭〇51、2的㈣ 201145813 輸出一第一差動電。dl。此時,由於該第三、四電晶體 _S3、4的間極分別收到第二偏壓電壓、,所以第二差 動電路A2會操作於偏壓模式而藉由第三、四電晶體 PMOS3、4的沒極輸出二偏壓電流咖。該第—、二差動電 路Μ、A2更將起阻抗作用而根據該第—差動電流⑻產生 該組差動輸出電壓Vo+、vQ_。 參閱圖4,反之,者楚一 田第 '一電晶體NMOS1、2的閘 極分別收到第-偏壓電壓Vbn,第—差動電路…會操作於 偏堡模式而藉由該第-、二電晶體Nm〇si、2岐極產生 二偏壓電流1dC2°此時,由於第三、四電晶體PM〇S3、4 的閘極分別接收該第二組差動電M Vin2+、vin2_,所以第 二差動電4 A2會操作於差動模式而藉由第三、四電晶體 腦S3、4的汲極輸出該第二差動電流奶。該第―、二差 動電路M、A2更將起阻抗作用而根據該第二差動電流⑽ 產生該組差動輸出電壓V〇+、ν〇-。 回歸參_ 2,詳細來說,油換裝置τ包括電連接第 -差動電路A1的二個第一開關S1和二個第二開關Μ,且 包括電連接第二差動電路A2的二個第—開關si和二個第 二開關S2。每一開關皆具有一第一端、—第二端和一控制 端’且各控制端受控制使相關的第__端和第二端於導通與 不導通之間切換。 電連接第-差動電路A1的二個第一開si,會藉由 各自的第-端分別接收該第一組差動電壓Vinl+、vini_, 且藉由各自的第二端分別電連接該二電晶冑画⑽、2的 201145813 間極。 電連接第一差動電路A1的二個第二開關S2,會藉由 各自的第一端分別接收第一偏壓電壓vbn,且藉由各自的第 二端分別電連接該二電晶體NMOS1、2的閘極。 另一方面’電連接第二差動電路A2的二個第一開關 S1 ’會藉由各自的第一端分別接收第二偏壓電壓Vbp,且 藉由各自的第二端分別電連接該二電晶體p]V[〇S3、4的閑 極。 • 電連接第二差動電路A2的二個第二開關,會藉由各自 的第一端分別接收該第二組差動電壓Vin2+、Vin2_,且藉 由各自的第二端分別電連接該二電晶體PM〇S3、4的閘極 該切換裝置T根據一控制信號來控制,使得所有第一 開關s 1同步導通或不導通,也使得所有第二開關S2同步 導通或不導通。且值得注意的是,第一、二開關S1、S2的 導通期間不會互相重疊(overlap)。, ▼...r rj I motion mode or -bias mode. The detailed operation situation is as follows: In Fig. 3, when the first and second transistors are difficult (10), the gates of 2 are made in the "group differential voltage Vhll+, ¥ 'the first differential circuit A1 is hit; in the dynamic mode The first and second transistors Lancome 51, 2 (4) 201145813 output a first differential power dl. At this time, since the third and fourth transistors _S3, 4 respectively receive the second bias The second differential circuit A2 operates in the bias mode and outputs two bias currents through the non-polarization of the third and fourth transistors PMOS3, 4. The first and second differential circuits Μ, A2 are further The set of differential output voltages Vo+, vQ_ will be generated according to the first differential current (8). Referring to FIG. 4, on the contrary, the gates of the first transistors NMOS1 and 2 respectively receive the first- The bias voltage Vbn, the first-differential circuit... operates in the partial mode, and the two-bias current is generated by the first and second transistors Nm〇si, 2, and the second bias current is 1dC2°. The gates of the crystals PM〇S3 and 4 respectively receive the second set of differential powers M Vin2+ and vin2_, so the second differential power 4 A2 operates in the differential mode and borrows The drains of the third and fourth transistor brains S3, 4 output the second differential current milk. The first and second differential circuits M and A2 will further act as impedances to generate the group according to the second differential current (10). Differential output voltage V〇+, ν〇-. Regression parameter _ 2, in detail, the oil changing device τ includes two first switches S1 and two second switches 电 electrically connected to the first differential circuit A1, and The switch includes two first switch si and two second switches S2 electrically connected to the second differential circuit A2. Each switch has a first end, a second end and a control end, and each control end is controlled to be The related __ terminal and the second end are switched between conducting and non-conducting. The two first opening si of the first differential circuit A1 are electrically connected, and the first group is respectively received by the respective first end. The driving voltages Vin1+, vini_ are electrically connected to the 201145813 interpoles of the two transistors (10) and 2 respectively through the respective second ends. The two second switches S2 electrically connected to the first differential circuit A1 are The first terminals respectively receive the first bias voltage vbn, and are respectively electrically connected to the gates of the two transistors NMOS1 and 2 through the respective second ends. On the other hand, the two first switches S1' electrically connected to the second differential circuit A2 respectively receive the second bias voltage Vbp by the respective first ends, and are electrically connected by the respective second ends respectively. The second transistor p]V[〇S3, 4 of the idle pole. • The second switch of the second differential circuit A2 is electrically connected, and the second set of differential voltages Vin2+ are respectively received by the respective first ends, Vin2_, and electrically connected to the gates of the two transistors PM〇S3, 4 by respective second ends, the switching device T is controlled according to a control signal, so that all the first switches s 1 are synchronously turned on or off, All of the second switches S2 are turned on or off. It is also worth noting that the on periods of the first and second switches S1, S2 do not overlap each other.
如此,當所有第一開關S i導通而所有第二開關S2不 導通時,則第一差動電路A1操作於差動模式,第二差動電 路A2操作於偏壓模式。當所有第一開關S1不導通而所有 第二開關S2導通時,則第一差動電路Ai操作於偏壓模式 ,第二差動電路A2操作於差動模式。 此外,增益電路G電連接於該第一、二差動電路ai〜2 之間’以接收來自該第-或二差動電路A1、A2的差動電流 。且增益電路G提供一增益以將來自該第一、二差動電「路^ 201145813 的阻抗作用進行放大,以增加該組差動輸出電壓Vo+、Vo-的幅值。 該增益電路G包括一第五電晶體PMOS5、一第六電晶 體PMOS6、一第七電晶體NMOS7、一第八電晶體NMOS8 、四個放大單元G1~G4。 該四個放大單元G1~G4的輸入端分別電連接於該四電 晶體PM0S5、PMOS6、NM0S7、NMOS8的源極,且四個 放大單元G1~G4的輸出端分別電連接於該四電晶體PMOS5 、PMOS6、NMOS7、NMOS8 的閘極。 籲 該四電晶體 PMOS5、PMOS6、NMOS7、NMOS8 的源 極分別電連接於該四電晶體PMOS3、PMOS4、NMOS1、 NMOS2的汲極。 該二電晶體NMOS7、NMOS8的汲極分別電連接於該 二電晶體PMOS5、PMOS6的汲極,且輸出該組差動輸出電 屋 Vo-、Vo+。 本實施例中的第一、二、七、八電晶體NMOS1、2、7 、8是一N型金屬氧化物半導體場效電晶體,而該第三、四 春 、五、六電晶體PMOS3~6是一 P型金屬氧化物半導體場效 電晶體。 又如圖5所示,為第一較佳實施例的變形,其中差別 在於: 沒有該增益電路G,而是第一差動電路A1直接電連接 於第二差動電路A2,且該第一、二差動電路將分-別起阻抗 作用而根據所產生的差動電流產生該組差動輸出電壓Vo+、 10 201145813 v〇-。又此變形的電路操作與上述類似,故不再重述。 而在詳細電路連接方式的差別為: 該第一、二電晶體NMOS1、NMOS2的汲極分別電連 接於該第三 '四電晶體PM0S3、PM〇S4的汲極,且輸出該 組差動輸出電壓ν〇_、ν〇+。 上述架構因移除尾端電流源,相較於先前技術可得到 更廣的輸出振幅》 <第二較佳實施例>Thus, when all of the first switches S i are turned on and all of the second switches S2 are not turned on, the first differential circuit A1 operates in the differential mode, and the second differential circuit A2 operates in the bias mode. When all of the first switches S1 are not turned on and all of the second switches S2 are turned on, the first differential circuit Ai operates in the bias mode, and the second differential circuit A2 operates in the differential mode. Further, a gain circuit G is electrically connected between the first and second differential circuits ai to 2' to receive a differential current from the first or second differential circuits A1, A2. And the gain circuit G provides a gain to amplify the impedance from the first and second differential electric circuits "201145813 to increase the amplitude of the set of differential output voltages Vo+, Vo-. The gain circuit G includes a a fifth transistor PMOS5, a sixth transistor PMOS6, a seventh transistor NMOS7, an eighth transistor NMOS8, and four amplification units G1~G4. The input terminals of the four amplification units G1 G G4 are electrically connected to The sources of the four transistors PM0S5, PMOS6, NM0S7, and NMOS8, and the output terminals of the four amplification units G1 to G4 are electrically connected to the gates of the four transistors PMOS5, PMOS6, NMOS7, and NMOS8, respectively. The sources of the PMOS5, PMOS6, NMOS7, and NMOS8 are electrically connected to the drains of the four transistors PMOS3, PMOS4, NMOS1, and NMOS2. The drains of the two transistors NMOS7 and NMOS8 are electrically connected to the two transistors PMOS5 and PMOS6, respectively. The drain of the group and the output of the differential output electric house Vo-, Vo+. The first, second, seventh, and eighth transistors NMOS 1, 2, 7, and 8 in this embodiment are an N-type metal oxide semiconductor field effect. a transistor, and the third, fourth spring, five, six transistor P MOS3~6 is a P-type metal oxide semiconductor field effect transistor. As shown in Fig. 5, it is a modification of the first preferred embodiment, wherein the difference is: without the gain circuit G, but the first differential circuit A1 is directly electrically connected to the second differential circuit A2, and the first and second differential circuits will respectively perform an impedance action to generate the set of differential output voltages Vo+ according to the generated differential current, 10 201145813 v〇- The circuit operation of this deformation is similar to the above, so it will not be repeated. The difference in the detailed circuit connection manner is as follows: The first and second transistors NMOS1, NMOS2 are electrically connected to the third 'four electric The drains of the crystals PM0S3, PM〇S4, and the differential output voltages ν〇_, ν〇+ are output. The above structure can obtain a wider output amplitude than the prior art by removing the tail current source. Second preferred embodiment >
如圖6所示,本發明運算放大器之第二較佳實施例, 適用於接收一第一組差動輸入電壓Vinl+、Vin卜和一第二 組差動輸人㈣Vin2+、Vin2_,並進行放大以輸出一組差 動輸出電壓Vo+、Vo-。 且該運算放大器包含:-直流偏壓電路D、—第一差動 電路B1' H動電路B2、—切換裝置τ、—增益電路 G、-共模回授電路CF、一共模偏壓電路c。其中,增益 電路G會透過該切換裝置了分㈣接到第1動電路βΐ、 一第二差動電路B2。 直流偏壓電路D用於產生-呈直流的第-偏壓電流IB1 ,且包括-第十-電晶體PM〇Su,該電晶體Μ継具有 :電連接於一直流電壓VDD的源極 '一電連接於一偏塵電 壓Vbp的閘極、和一輸出該第一偏屋電流ΐβι的沒極。 第一差動電路B1透過該切τ > ^ ^刀換裴置T耦接該直流偏壓電 並用於將所接收的M轉換成電流, 日日體PMOS1及一第二電晶體pM⑽。該二電晶[體] 11 201145813 PMOSl、2分別具有一閘極、一源極和—汲極。 該第二差動電路透過該切換裝置Τ耦接該直流偏壓電 路,並用於將所接收的電壓轉換成電流,且包括··一第九 電晶體PMOS9及-第十電晶體pM〇Si〇。該二電晶體 PMOS9、10分別具有一閘極、一源極和一汲極。 該切換裝置T則用以切換地傳遞該第一組差動電壓或 -偏壓電M Vbp到二電晶體PM⑽、2的閘極,並用以切 換地傳遞該第二組差動電壓或該偏壓電壓到pM〇s9 ' 的 閘極。較佳地,本例的第一、二組差動電壓相同。 · 值得注意的是,當該切換裝置τ傳遞第一組差動電壓 到一電晶體PM0S1、2的閘極時’會傳遞偏壓電壓心到 -電晶體PM0S9、1G的閘極。而當該切換裝置傳遞偏壓電 壓Vbp到二電晶體PMOS1、2的閘極時,會傳遞第二組差 動電壓到PMOS9、1〇的閘極。 而各差動電路Bl、B2會因為收到的信號不同,而操作 於一差動模式或一偏壓模式。詳細作動情形說明如下。 參閱圖7’當二電晶體PM〇sl、w閘極分別收到第一 · 組差動電壓vinl+、Vinl’第—差動電路B1會操作於差動 模式而藉由該二電晶體PMOS1、2的汲極輸出一呈交流的 第一差動電流idi。此時,由於二電晶體pM〇S9、ι〇的閘 極分別收到偏壓電壓Vbp’所以第二差動電路B2會操作於 偏壓模式而藉由二電晶體PMOS9、1〇的沒極輸出二第二偏 壓電流I.B2。該第-、二差動電路B1、B2和該共模偏壓電 路C該更將起阻抗作用而根據該第—差動電流⑷產生該組 12 201145813 差動輸出電壓Vo+、Vo-。As shown in FIG. 6, a second preferred embodiment of the operational amplifier of the present invention is adapted to receive a first set of differential input voltages Vinl+, Vin and a second set of differential inputs (4) Vin2+, Vin2_, and to amplify A set of differential output voltages Vo+, Vo- is output. The operational amplifier includes: a DC bias circuit D, a first differential circuit B1', a H circuit B2, a switching device τ, a gain circuit G, a common mode feedback circuit CF, and a common mode bias voltage. Road c. The gain circuit G is connected to the first dynamic circuit βΐ and the second differential circuit B2 via the switching device. The DC bias circuit D is for generating a DC-first bias current IB1 and includes a tenth-transistor PM〇Su having a source electrically connected to the DC voltage VDD. A gate electrically connected to a dust-dusting voltage Vbp, and a gate electrically outputting the first partial current ΐβι. The first differential circuit B1 is coupled to the DC bias voltage through the tangent τ > ^^^, and is used to convert the received M into a current, a solar PMOS1 and a second transistor pM(10). The two crystals [body] 11 201145813 PMOS1, 2 respectively have a gate, a source and a drain. The second differential circuit is coupled to the DC bias circuit through the switching device, and is configured to convert the received voltage into a current, and includes a ninth transistor PMOS9 and a tenth transistor pM〇Si Hey. The two transistors PMOS 9, 10 have a gate, a source and a drain, respectively. The switching device T is configured to switchably transmit the first set of differential voltages or bias voltages M Vbp to the gates of the two transistors PM (10), 2, and to switch the second set of differential voltages or the biases Press the voltage to the gate of pM〇s9'. Preferably, the first and second sets of differential voltages of this example are the same. It is worth noting that when the switching device τ delivers the first set of differential voltages to the gates of one of the transistors PM0S1, 2, the bias voltage is delivered to the gates of the transistors PM0S9, 1G. When the switching device transmits the bias voltage Vbp to the gates of the two transistors PMOS 1, 2, the second set of differential voltages are transferred to the gates of the PMOS 9, 1 。. Each of the differential circuits B1 and B2 operates in a differential mode or a bias mode because the received signals are different. The detailed action situation is explained below. Referring to FIG. 7', when the two transistors PM〇sl and w are respectively received by the first group of differential voltages vinl+ and Vinl', the differential circuit B1 operates in the differential mode by the two transistors PMOS1. The drain output of 2 is the first differential current idi of the alternating current. At this time, since the gates of the two transistors pM〇S9 and ι〇 respectively receive the bias voltage Vbp', the second differential circuit B2 operates in the bias mode and the second transistor PMOS9, 1〇 Two second bias currents I.B2 are output. The first and second differential circuits B1, B2 and the common mode bias circuit C will further act as an impedance to generate the set of 12 201145813 differential output voltages Vo+, Vo- based on the first differential current (4).
參閱圖8,反之,當二電晶體PMOS1、2的閘極分別收 到偏壓電壓Vbp,第一差動電路B1會操作於偏壓模式而藉 由二電晶體PMOS1、2的汲極輸出二第三偏壓電流IB3。此 時,由於二電晶體PMOS9、10的閘極分別接收該第二組差 動電壓Vin2+、Vin2-,所以第二差動電路B2會操作於差動 模式而藉由PMOS9、10的汲極輸出該第二差動電流id2。 該第一、二差動電路B1、B2和該共模偏壓電路C該更將起 阻抗作用而根據該第二差動電流id2產生該組差動輸出電壓 Vo+ ' Vo- ° 該增益電路G電連接於該共模偏壓電路C和該切換裝 置T,且提供一增益以將來自該第一、二差動電路B1、B2 和該共模偏壓電路C的阻抗作用進行放大,以增加該組差 動輸出電壓Vo+、Vo-的幅值。 回歸參閱圖 6,共模回授(common-mode feedback, CMFB)電路CF,偵測該組差動輸出電壓Vo+、Vo-,而送出 一期望將該組差動輸出電壓的共模值調整至一預設值的共 模控制電壓VCMFB,又此電路的詳細做法可參考「D. Senderowicz, S. Dreyer, J. II. Huggins, C. F. Rahim, and C. A. Laber,” A family of differential NMOS analog circuits for a PCM codes filter chip,” IEEE J. Solid-State Circuits, vol. SC-17,Dec.1982,pp. 1014-1023」、「R. Castello and P. R. Gray, “A high-performance micropower switched-capacitor filter,” IEEE J. Solid-State Circuits, vol. SC-20, no. 6, Dec^.i 13 201145813 1985, pp.1122-1132」,但不限於此文獻所述。 共模偏壓電路C,用以接收該共模控制電壓,以 將該組差動輸出電M VQ+、VG_的平均值維持於—預設值。 再者,詳細來說,本例之增益電路G的實施態樣是: 包括-第五、六電晶體麵〇S5、6、一第七、八電晶體 PM〇S7、8和四個放大單& G1〜G4。其中,該四個放大單 元G1~G4的輸入端分別電連接於該等電晶體顧〇55、6、Referring to FIG. 8, on the other hand, when the gates of the two transistors PMOS1 and 2 respectively receive the bias voltage Vbp, the first differential circuit B1 operates in the bias mode and the drain output of the two transistors PMOS1, 2 is two. The third bias current IB3. At this time, since the gates of the two transistors PMOS9, 10 respectively receive the second set of differential voltages Vin2+, Vin2-, the second differential circuit B2 operates in the differential mode and outputs the drains of the PMOSs 9, 10 The second differential current id2. The first and second differential circuits B1, B2 and the common mode bias circuit C will further act as an impedance to generate the set of differential output voltages Vo+ ' Vo- ° according to the second differential current id2. G is electrically coupled to the common mode bias circuit C and the switching device T, and provides a gain to amplify impedance effects from the first and second differential circuits B1, B2 and the common mode bias circuit C To increase the amplitude of the set of differential output voltages Vo+, Vo-. Referring back to FIG. 6, a common-mode feedback (CMFB) circuit CF detects the set of differential output voltages Vo+, Vo-, and sends a desired common mode value of the set of differential output voltages to A preset value of the common mode control voltage VCMFB, and the detailed description of this circuit can be found in "D. Senderowicz, S. Dreyer, J. II. Huggins, CF Rahim, and CA Laber," A family of differential NMOS analog circuits for a PCM codes filter chip," IEEE J. Solid-State Circuits, vol. SC-17, Dec. 1982, pp. 1014-1023", "R. Castello and PR Gray, "A high-performance micropower switched-capacitor filter , IEEE J. Solid-State Circuits, vol. SC-20, no. 6, Dec..i 13 201145813 1985, pp. 1122-1132", but is not limited to this document. The common mode bias circuit C is configured to receive the common mode control voltage to maintain an average value of the set of differential output powers M VQ+ and VG_ at a preset value. Furthermore, in detail, the implementation of the gain circuit G of this example is: including - fifth, sixth transistor face 〇S5, 6, a seventh, eight transistor PM 〇 S7, 8 and four amplification orders & G1~G4. The input ends of the four amplification units G1 G G4 are electrically connected to the transistors 55, 6, respectively.
PM〇S7'8的源極,且四個放大單^⑴⑽的輸出端分別 電連接於該等電晶體NM0S5、6、PM〇S7、8的閘極。二電 晶體PM〇S7、8的沒極分別電連接於該二電晶體麵⑽、 6的汲極’且輸出該組差動輸出電壓ν〇·、v〇+。 而本例之切換裝置T的實施態樣是:包括電連接第一 差動電路Μ的六個第一開關S1和六個第二開關以,且包 括電連接第二差動電路B2的六個第一開關si和六個第二 開關S2。每一開關皆具有一第一端、—第二端和一控制端 ’且各控制端受㈣使相關的第—端和第:端於導通與不 導通之間切換。The source of the PM 〇 S7'8, and the outputs of the four amplifiers (1) (10) are electrically connected to the gates of the transistors NM0S5, 6, PM 〇 S7, 8, respectively. The small electrodes of the two transistors PM〇S7 and 8 are electrically connected to the drains of the two crystal faces (10) and 6, respectively, and output the set of differential output voltages ν〇·, v〇+. The implementation of the switching device T of the present example is: six first switches S1 and six second switches including the first differential circuit 电 electrically connected, and six electrically connected second differential circuits B2 The first switch si and the six second switches S2. Each switch has a first end, a second end and a control end and each control terminal is (4) switched between the associated first end and the third end between conducting and non-conducting.
電連接第-差動電路B1的該六第一開M S1的其中之 二,會藉由各自的第-端分別接收該第-組差動㈣+ 、Vml- ’且藉由各自的第二端分別電連接該二電晶體 PMOS1、2的閘極。 電連接第一差動電路B1的該六第一開關S1的其中之 另二,會藉由各自的第一端分別電連接於該二電晶體 PMOS1、2的源極,且藉由各自的第二端分別電連接於該電 14 201145813 晶體PMOS11的汲極。 電連接第一差動電路B1的該六第一開關S1的剩餘之 二,會藉由各自的第一端分別電連接於該二電晶體NM〇S5 ' 6的源極,且藉由各自的第二端分別電連接該二電晶體 PM0S1、2的汲極。Two of the six first openings M S1 electrically connected to the first-differential circuit B1 receive the first-group differential (four)+, Vml-' by respective first ends and by respective second The terminals are electrically connected to the gates of the two transistors PMOS1, 2, respectively. The other two of the six first switches S1 electrically connected to the first differential circuit B1 are electrically connected to the sources of the two transistors PMOS1 and 2 by respective first ends, and by respective The two ends are electrically connected to the drain of the circuit 14 201145813 crystal PMOS11, respectively. The remaining two of the six first switches S1 electrically connected to the first differential circuit B1 are electrically connected to the sources of the two transistors NM〇S5'6 by respective first ends, and by respective The second ends are electrically connected to the drains of the two transistors PM0S1, 2, respectively.
電連接第一差動電路B1的該六個第二開關S2的其中 之一,會藉由各自的第一端分別接收偏壓電壓Vbp,且藉由 各自的第二端分別電連接該二電晶體p M 〇 s丨、2的閘極: 電連接第一差動電路B1的該六個第二開關S2的其中 之另- ’會藉由各自的第一端分別電連接於該二電晶體 PM0S1、2的源極,且藉由各自的第:端分別電連接於該直 流電壓VDD。 友切电峪的該六個第 之二’會藉由各自的第一端分別電連接於該二電晶體 PMOS7 8的源極’且藉由各自的第二端分別電連接於該二 電晶體PMOS1、2的汲極。 、° 一 另―方面’電連接第二差動電路Β2的該六 S1的其中之二,會藉由夂ή从结 网關 — 自的第一端分別接收該偏壓電壓One of the six second switches S2 electrically connected to the first differential circuit B1 receives the bias voltage Vbp by the respective first ends, and electrically connects the two terminals by the respective second ends. a gate of the crystal p M 〇s丨, 2: the other of the six second switches S2 electrically connected to the first differential circuit B1 is electrically connected to the two transistors by respective first ends The sources of PM0S1 and 2 are electrically connected to the DC voltage VDD by respective first ends. The six seconds of the switch are electrically connected to the source of the two transistors PMOS 7 8 by respective first ends and electrically connected to the two transistors by respective second ends. The drain of PMOS 1, 2. And two of the six S1s electrically connected to the second differential circuit Β2, respectively, receive the bias voltage by the first terminal from the junction gateway.
Vbp ’且猎由各自的第-媳八 柒刀別電連接該二電晶體PMOS9 ' 10的閘極。 y 電連接第二差動雷技 產動電路B2的該六個第一開關 之另二’會藉由各自的坌 ^ v 、甲 自的苐一端分別電連接於該二 PMOS9、10的源極,且 玉日日體 日由各自的第一端分別電連接於兮 直流電壓VDD。 电逐接於該 15 201145813 電連接第二差動電路B2的該六個第—開關si的剩餘 之-,會藉由各自的第一端分別電連接於該二電晶體 圃7、8的源極’且藉由各自的第二端分別電連接該二電 晶體PMOS9、1〇的汲極。 一爾第二差動電路B2的該六個第二開關幻的其中 之一’會猎由各自的第一端分別接收該第二差動電壓Vin2+ 、Vni2- ’且藉由各自的第二端分別電連接該二電晶體 PMOS9、10的閘極。 電連接第二差動電路B2的該六個第二開關s2的其中 之另- ’會藉由各自的第一端分別電連接於該二電晶體 PMOS9、H)的源極,且藉由各自的第:端分別電連接於該 電晶體PMOS11的汲極。 電連接第二差動電路B2的該六個第二開關Μ的剩餘 之二’會藉由各自的第一端分別電連接於該二電晶體 NMOS5、6的源極,且藉由各自的第二端分別電連接該二 電晶體PMOS9、10的没極。 該切換裝置T根據一控制信號來控制,使得所有第— 開關S1同步導通或不導通,也使得所有第二開關S2同步 導通或不導通。且值得注意的是,第—、二開關s i、S2的 導通期間不會互相重疊(overlap)。 如此,當所有第一開關S1導通而所有第二開關S2不 導通時,則第一差動電路B1操作於差動模式,第二差動電 路B2操作於偏壓模式。當所有第一開關si不導通而所有 第二開關S2導通時,則第一差動電路Bl操作於偏壓模式 16 201145813 ,第二差動電路B2操作於差動模式。 此外,該共模偏壓電路C的實施態樣是:該共模偏壓 電路C電連接於該增益電路G和該共模回授電路CF,且透 過切換裝置T耦接到該第一、二差動電路B1、B2。 該共模偏壓電路C包括一 NMOS3、4。該二電晶體 NMOS3、4的閘極接收來自該共模回授電路CF的該共模控 制電壓 VcMFB J 該二電晶體NMOS3、4的源極電連接於地 ,該NMOS3、4的汲極分別電連接於該二電晶體NMOS5、 ^ 6的源極。 因本實施例使用由該第一、二差動電路B1、B2、切換 裝置T和該增益電路G所構成的折疊式串疊型(folded-cascode)架構,相較於先前技術,可得到較大的輸出振幅。 本實施例中的第三〜第六電晶體NMOS3~6是一 N型金 屬氧化物半導體場效電晶體(NMOS),而第一、第二、第七 〜十一電晶體PMOS1、2、7~11是一 P型金屬氧化物半導體 場效電晶體(PM0S)。 • 又如圖9所示,為第二較佳實施例的變形,其中差別 在於: 沒有該增益電路G,又此變形的電路操作與該第二較佳 實施例類似,故不再重述。 <第三較佳實施例> 如圖10所示,與第二較佳實施例的差別為將NM0S改 成PM0S,而將PM0S改成NMOS,其中,該第三、四電晶 體PMOS3、4的源極改成電連接於一直流電壓VDD,而氣 17 201145813 第十一電晶體NMOS11的源極改成電連接於地,電連接於 第一差動電路B1的部分第二開關S2之第二端改電連接於 地,電連接於第二差動電路B2的部分第一開關S1之第二 端改電連接於地’其餘部分因其連接關係與操作類似,故 不再重述。 又如圖11所示,為第三較佳實施例的變形,其中差別 在於: 沒有該增益電路G,又此變形的電路操作與該第三較佳 實施例類似,故不再重述。 又上述所有實施例,不限於用金屬氧化物半導體場效 電晶體(MOS)實現,也可改成雙載子接面電晶體(bjt)實現 〇 练上所述,將本發明之較佳實施例應用於類比/數位轉 換裝置之共旱運算放大器的架構中具有以下優點: 1_藉由該第一、二差動電路A1、A2或B1' B2切換於 差動模式和偏壓模式中,可消除殘值記憶效應。 2.相較於先前技術,本發明的差動輸出電壓之振幅較大籲 因此可合忍較大的雜訊,又因為雜訊正比於②(k :波 故曼常數’ T:絕對溫度,C:電容值),所以本發^月所推動 的電容大小就可以降低’如果不需要推動太大的電容就 可以把MOS大小縮小,使總面積下降,進而減少成本。 3·更因為可容忍較大的雜訊,於供應較小的直流電壓即 I達到與先前技術相同的信號雜訊比(SNR)’因此,可減少 功率消耗。 18 201145813 惟以上所述者’僅為本發 能以此限定本發明實施之範圍 範圍及發明說明内容所作之簡 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 月之較佳貫施例而已,當不 ,即大凡依本發明申請專利 單的等效變化與修飾,皆仍 圖1疋習知運算放大器的電路圖;Vbp' and the gates of the second transistor PMOS9'10 are electrically connected by their respective first-eighth knives. y electrically connecting the other two of the six first switches of the second differential lightning performance circuit B2 to be electrically connected to the sources of the two PMOSs 9, 10 by respective 苐^, And the jade day is electrically connected to the 兮DC voltage VDD by the respective first ends. The remaining ones of the six first switches si electrically connected to the second differential circuit B2 are electrically connected to the sources of the two transistors 、7, 8 by respective first ends. The poles are electrically connected to the drains of the two transistors PMOS 9, 1 , respectively, by respective second ends. One of the six second switches of the second differential circuit B2 is hunted by the respective first ends to receive the second differential voltages Vin2+, Vni2-' and by respective second ends The gates of the two transistors PMOS 9, 10 are electrically connected, respectively. The other of the six second switches s2 electrically connected to the second differential circuit B2 is electrically connected to the sources of the two transistors PMOS9, H by respective first ends, and by respective The first end is electrically connected to the drain of the transistor PMOS11, respectively. The remaining two of the six second switches 电 electrically connected to the second differential circuit B2 are electrically connected to the sources of the two transistors NMOS 5, 6 respectively by the respective first ends, and by respective The two ends are electrically connected to the poles of the two transistors PMOS 9, 10, respectively. The switching device T is controlled according to a control signal such that all of the first switches S1 are turned on or off synchronously, and all of the second switches S2 are simultaneously turned on or off. It is also worth noting that the conduction periods of the first and second switches s i and S2 do not overlap each other. Thus, when all of the first switches S1 are turned on and all of the second switches S2 are not turned on, the first differential circuit B1 operates in the differential mode, and the second differential circuit B2 operates in the bias mode. When all of the first switches si are not turned on and all of the second switches S2 are turned on, the first differential circuit B1 operates in the bias mode 16 201145813 and the second differential circuit B2 operates in the differential mode. In addition, the common mode bias circuit C is electrically connected to the gain circuit G and the common mode feedback circuit CF, and coupled to the first through the switching device T. One or two differential circuits B1, B2. The common mode bias circuit C includes an NMOS 3, 4. The gates of the two transistors NMOS3, 4 receive the common mode control voltage VcMFB J from the common mode feedback circuit CF. The sources of the two transistors NMOS3, 4 are electrically connected to the ground, and the drains of the NMOSs 3 and 4 are respectively Electrically connected to the sources of the two transistors NMOS5, ^6. Since the present embodiment uses a folded-cascode architecture composed of the first and second differential circuits B1 and B2, the switching device T, and the gain circuit G, compared with the prior art, Large output amplitude. The third to sixth transistors NMOS 3 to 6 in this embodiment are an N-type metal oxide semiconductor field effect transistor (NMOS), and the first, second, seventh to eleven transistors PMOS 1, 2, 7 ~11 is a P-type metal oxide semiconductor field effect transistor (PM0S). Further, as shown in Fig. 9, a modification of the second preferred embodiment, wherein the difference is that the circuit operation without the gain circuit G is similar to that of the second preferred embodiment and will not be described again. <Third Preferred Embodiment> As shown in FIG. 10, the difference from the second preferred embodiment is that the NMOS is changed to PMOS and the PMOS is changed to NMOS, wherein the third and fourth transistors PMOS3, The source of 4 is electrically connected to the DC voltage VDD, and the source of the gas 17 201145813 eleventh transistor NMOS 11 is electrically connected to ground, and is electrically connected to a portion of the second switch S2 of the first differential circuit B1. The second end is electrically connected to the ground, and the second end of the first switch S1 electrically connected to the second differential circuit B2 is electrically connected to the ground. The rest of the switch is similar to the operation because of its connection relationship, and therefore will not be described again. Further, as shown in Fig. 11, a modification of the third preferred embodiment, wherein the difference is that the circuit operation without the gain circuit G is similar to that of the third preferred embodiment and will not be described again. Furthermore, all the above embodiments are not limited to being implemented by a metal oxide semiconductor field effect transistor (MOS), but may also be modified into a double carrier junction transistor (bjt) to achieve the training, and the preferred embodiment of the present invention. The example has the following advantages in the architecture of the co-occurrence operational amplifier of the analog/digital conversion device: 1_ switching between the differential mode and the bias mode by the first and second differential circuits A1, A2 or B1' B2, Can eliminate the residual memory effect. 2. Compared with the prior art, the amplitude of the differential output voltage of the present invention is large, so that it can withstand a large amount of noise, and because the noise is proportional to 2 (k: waveman constant 'T: absolute temperature, C: Capacitance value), so the size of the capacitor pushed by this method can be reduced. 'If you don't need to push too much capacitance, you can reduce the size of the MOS, so that the total area is reduced, and the cost is reduced. 3. Moreover, because of the large noise that can be tolerated, the supply of a smaller DC voltage, i, achieves the same signal-to-noise ratio (SNR) as in the prior art. Therefore, power consumption can be reduced. 18 201145813 The above description is only intended to limit the scope of the invention and the scope of the invention. [Simple description of the scheme] The best example of the month is the case. If not, the equivalent change and modification of the patent application form according to the present invention are still shown in the circuit diagram of the conventional operational amplifier.
圖2是本發明第一較佳實施例的電路 圖3是該第一較佳實施例輸出第一 圖; 差動電流的電路 圖 電流的電路圖 圖4是該第一較佳實施例輸出第二差動 圖5是該第—較佳實施例變形的電路圖; 圖6是本發明第二較佳實施例的電路圖; • θ 〇第—較佳貫施例輸出第一差動電流的電路圖 Θ β。第一較佳貫施例輸出第二差動電流的電路圖 圖9是該第二較佳實施例變形的電路圖; •疋本發明第二較佳實施例的電路圖;及 圖11疋該第二較佳實施例變形的電路圖。 19 201145813 【主要元件符號說明】 A1 ~2.....第一、二差動電路 T..........切換電路 S1〜2 ••…第一、二開關 G..........增益電路 G1-4····.放大單元 NMOS1〜2第一、二電晶體 NMOS7~8第七、八電晶體 PMOS3〜6第三~六電晶體 D..........直流偏壓電路 C..........共模偏壓電路 CF........共模回授電路 B1-2 ••…第一、二差動電路 PMOSl~2第一、二電晶體 PMOS7-11第七〜十一電晶體 NMOS3〜6第三〜六電晶體 202 is a circuit diagram of the first preferred embodiment of the present invention. FIG. 3 is a first diagram of the output of the first preferred embodiment. FIG. 4 is a circuit diagram of the current of the differential current. FIG. 4 is a second differential output of the first preferred embodiment. Figure 5 is a circuit diagram of a modification of the first preferred embodiment; Figure 6 is a circuit diagram of a second preferred embodiment of the present invention; • θ 〇 - the preferred embodiment of the circuit diagram Θ β for outputting the first differential current. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 9 is a circuit diagram showing a modification of the second preferred embodiment; FIG. 9 is a circuit diagram of a second preferred embodiment of the present invention; and FIG. A circuit diagram of a preferred embodiment variant. 19 201145813 [Description of main component symbols] A1 ~2.....first and second differential circuits T..........switching circuits S1~2 ••...first and second switches G.. ........Gain circuit G1-4····. Amplifier unit NMOS1~2 first, two transistors NMOS7~8 seventh, eight transistors PMOS3~6 third~six transistor D.. ........DC bias circuit C..........Common mode bias circuit CF........Common mode feedback circuit B1-2 ••... First and second differential circuits PMOS1~2 first and second transistors PMOS7-11 seventh to eleven transistors NMOS3~6 third to sixth transistors 20
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US6759898B1 (en) * | 2003-01-24 | 2004-07-06 | Ion E. Opris | Dual input differential amplifier |
TWI330457B (en) * | 2006-12-21 | 2010-09-11 | Novatek Microelectronics Corp | Differential amplifier with plurality of input pairs |
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US10972079B2 (en) | 2019-05-02 | 2021-04-06 | Ic Plus Corp. | Common mode voltage level shifting and locking circuit |
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