TW201141807A - Surface treatment method for glass substrate and device thereof - Google Patents

Abstract

The present invention provides a surface treatment method of glass substrate, comprising: placing a glass substrate in a vacuum treatment chamber; flowing gas into the vacuum treatment chamber; and providing power to generate ion source which is used to perform a surface treatment on the surface of the glass substrate, thereby not only cleaning the surface but also reducing the surface resistance of the conductive film of the glass substrate to increase its conductivity and crystallinity of surface coating film during the following processes.

Description

201141807 VI. Description of the Invention: [Technical Field] The present invention relates to a surface treatment method and device for a glass substrate, mainly for performing ion source pretreatment on the surface of the glass substrate, which not only achieves the effect of surface cleaning, but also The surface resistance of the subsequent glass substrate conductive film can be lowered to increase its conductivity. [Prior Art] • Recently, flat panel displays have been widely used in, for example, LCD TVs, computers, mobile phones, and Personal Digital Assistants (PDAs). Among them, the glass substrate is one of the important key materials in the manufacturing process of the flat panel display panel. However, the substrate cleaning system used in the current substrate manufacturing process has problems to be improved. The cleaning method of the traditional glass substrate requires a large amount of chemical cleaning solvent, and the subsequent use of a large amount of water to rinse and dry. This cleaning process not only causes air pollution caused by volatile organic gases, but also wastes water resources and time. In the case of Taiwan • Bay, the EPA recently proposed to amend the regulations and levy a V0C air pollution fee, which will cause pressure on the cleaning process in the country. In addition, the international trend is also moving towards the green products of green processes. Relevant regulations are also being formulated or implemented. Therefore, the wet cleaning methods have not been able to meet the demand. SUMMARY OF THE INVENTION The main object of the present invention is to provide a method and a device for treating a surface of a glass substrate applied to an electronic device, mainly for performing ion source pretreatment on the surface of the glass substrate, which not only achieves the effect of surface cleaning, but also The surface resistance of the conductive film of the glass substrate can be reduced after 201141807 to increase its conductivity. In order to achieve the above object, the surface treatment method of the glass substrate in the present invention is to first place the glass substrate in a vacuum processing chamber, then pass a gas into the vacuum processing chamber, and provide a power source to generate an ion source to utilize the The surface treatment of the ion source on the surface of the glass substrate not only achieves the surface cleaning effect, but also reduces the surface resistance of the conductive film of the glass substrate to increase the conductivity thereof and increase the crystallinity of the surface coating film. [Embodiment] The features of the present invention can be clearly understood by referring to the drawings and the detailed description of the embodiments. The surface treatment device for a glass substrate of the present invention, as shown in the first and second figures, includes at least one glass placement trolley 21 for placing the glass substrate 2 〇, and the glass substrate can be transported into a vacuum processing chamber 10; a vacuum processing chamber 10, provided with an electron gun 11; a vacuum assembly 30,

The vacuum processing chamber is evacuated to a vacuum; a gas supply assembly 40 is connected to the vacuum processing chamber 10 for connecting the vacuum system to the vacuum processing chamber 10 for supplying gas to the vacuum processing Room 1〇; a power supply component 5〇, is the Austrian

201141807 The pressure, power or time of the gas supplied to the component 40, or the voltage of the control power source. With the above device, the following processing methods can be performed. Please refer to the second figure at the same time, which includes at least the following steps: Step A, the glass substrate 20 is transferred to the vacuum processing chamber by the glass placing trolley 21. In the step S, the gas supply unit 40 is supplied with gas into the electron processing chamber of the vacuum processing chamber, wherein oxygen can be introduced (the gas flow rate is 1 〇 5 〇 SCCM) 'and access Argon gas (the gas flow rate is 10~50 SCCM); Step c, using the power supply component 50 to provide power to generate an ion source 'where the voltage of the power source can be controlled between 500 and 2000 volts (and 800 to 1200 volts) Between the two, and the working pressure in the vacuum processing chamber can be controlled to 1~5mtc)i*:r; Step 1>, using the ion source to surface treatment on the surface of the glass substrate 20, the present invention utilizes ions The surface treatment of the glass substrate by the low-energy active atomic group in the source not only achieves the surface cleaning effect, but also reduces the surface resistance of the subsequent glass substrate conductive film to increase its conductivity. The surface treatment device may further be provided with a coating assembly 70. As shown in the fourth figure, the coating assembly 70 is disposed after the vacuum processing chamber 10, and the glass substrate after the step D is subjected to a coating step, which is performed on the coating step. At least one surface of the glass substrate is plated with a conductive film, for example, an indium tin oxide (ITO) conductive film, wherein the glass substrate of the present invention is pre-treated by an ion source to increase the surface clock The crystallinity of the film, as shown in Table 1, is the effect of the ion source pretreatment on the surface resistance of the glass substrate 201141807. This embodiment is a glass substrate without ion source pretreatment, and the second to fourth embodiment For the implementation of the ion source pre-treatment of the glass substrate, wherein the abscissa (v) is the voltage of the power supply provided by the chamber of the vacuum processing chamber, and the ordinate (ohm·/square) is the surface resistance value of the glass substrate, As can be clearly seen in Table 1, the glass substrate (ie, Example 1) without the ion source pretreatment has a large surface resistance value (about 683 ohm·/square), and other implementations before the ion source. The treated glass substrate (i.e., Examples 2 to 4) has a small surface resistance value, and the glass substrate of the fourth embodiment has a minimum surface resistance value (about 402 ohm. / square).

300 200 Embodiment 1 None Embodiment 2 800 Embodiment 3 1000 Embodiment 4 1200 ion source (V) Table 1 again, the glass substrate of the present invention is pre-treated by an ion source to increase the crystallinity of the subsequent surface coating, and further The thickness of the coating is reduced, so that the glass substrate with the conductive film is more suitable for application in an optoelectronic device, for example, in a touch panel, and the overall transmittance can be increased by the thin coating. As shown in Table 2, the effect of the ion source pretreatment on the thickness of the indium tin oxide of the glass substrate after coating (under the same surface resistance condition) is that the first embodiment is the 201141807 glass substrate without the ion source pretreatment. In the second to fourth embodiments, the glass substrate after the ion source pretreatment is performed, wherein the abscissa (v) is a vacuum processing chamber.

The voltage from the cavity to the supplied power supply is large λ!, 'and the vertical lion's girth is a forged film after indium tin oxidation = film = (unit is Α), as can be clearly seen from Table 2, there is no implementation of the ion source before the oxide (that is, the embodiment -) has a thick film thickness (about the same meaning, and other implementations of the indium tin oxide after the pretreatment) (that is, the film thickness of the second embodiment is smaller, and the indium material of the fourth embodiment is further Thick (about 150 Α). Small film

The technical content and technical features of the present invention have been disclosed as above, and those skilled in the art may still make substitutions and modifications based on the spirit of the invention. Therefore, the present invention is not to be construed as being limited to the details disclosed in the embodiments of the present invention. Replacement and repair [Simplified description of the drawings] The structural perspective view. The first figure is the surface treatment apparatus of the present invention. 201141807 The second figure is a schematic structural view of the surface treatment apparatus of the present invention. The third figure is a schematic diagram of the surface treatment method in the present invention. The fourth figure is another schematic structural view of the surface treatment apparatus of the present invention. [Description of main components and symbols] Vacuum processing chamber 10 Electron gun 11 Glass substrate 20 Glass placing trolley 21 Vacuuming assembly 30 Gas supply assembly 40 Power supply assembly 50 Control assembly 60 Coating assembly 70

Claims (1)

201141807 VII. Patent application scope: 1. A surface treatment method for a glass substrate, comprising the following steps: A. placing the glass substrate in a vacuum processing chamber; B, introducing a gas into the vacuum processing chamber; C, providing a power source to generate an ion source; D. using the ion source to surface treatment on the surface of the glass substrate. 2. The surface treatment method for a glass substrate according to claim 1, wherein the voltage of the power source is between 500 and 2000 volts. 3. The surface treatment method for a glass substrate according to claim 1, wherein the voltage of the power source is preferably between 800 and 1200 volts. 4. The surface treatment method of the glass substrate according to claim 1 or 2, wherein the step E may be further performed after the step D, and the step E may be a coating step. 5. The surface treatment method of the glass substrate according to claim 4, wherein the coating step of the step E is performed by plating a conductive film on at least one surface of the glass substrate. 6. The surface treatment method for a glass substrate according to claim 5, wherein the conductive film is an indium tin oxide (ITO) conductive film. 7. The surface treatment method for a glass substrate according to claim 1, wherein oxygen and argon are introduced in the step B. 8. The surface treatment method for a glass substrate according to claim 7, wherein the gas flow rate of the oxygen gas is 10 to 50 SCCM. 9. The surface treatment method for a glass substrate according to claim 7, wherein the gas flow rate of the argon gas is 10 to 50 SCCM. The method of surface treatment of a glass substrate according to claim 1 or 7, wherein the vacuum processing chamber is controlled by a surface treatment device of 1 to 5 mtorr 〇 11 kinds of slabs, including at least: The glass is placed on the trolley for placing the glass substrate, and the glass substrate is transported to a vacuum processing chamber; a vacuum processing chamber is provided with an electronic grab; and a vacuuming assembly is connected to the vacuum processing chamber for Pumping the vacuum processing chamber to a vacuum; a gas supply assembly is coupled to the vacuum processing chamber for supplying gas to the vacuum processing chamber; a power supply assembly is coupled to the vacuum processing chamber for A power supply is provided in the vacuum processing chamber; and a control component is respectively connected to the vacuuming component, the gas supply component, and the power supply component to control the working state of each component. 12. The surface treatment apparatus for a glass substrate according to claim 11, wherein the step is provided with a coating assembly, the key film assembly is disposed after the vacuum processing chamber to receive the glass substrate, and at least one of the glass substrates The surface is plated with a conductive film. The surface treatment apparatus for a glass substrate according to claim 12, wherein the conductive film is an indium tin oxide (ITO) conductive thin crucible.