34055twf.doc/I 201135333 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種晝素結構與對準標記，且特別是 有關於一種易於檢測誤對準(mis-alignment)的晝素結構與 對準標記。 【先前技術】 隨著顯示科技的日益進步，人們藉著顯示器的辅助可 使生活更加便利，為求顯示器輕、薄之特性，促使平面顯 示器（flat panel display，FPD)成為目前的主流。在諸多平面 顯示器中’液晶顯示器(liquid cryStal display，LCD)具有高 空間利用效率、低消耗功率、無輻射以及低電磁干擾等優 越特性，因此，液晶顯示器深受消費者歡迎。 在一般的液晶顯示器中，整合有彩色濾光薄膜之主動 几件陣列基板(COA)與整合有黑矩陣之主動元件陣列基板 (BOA)已經屬於目前的主流。就現有的c〇A基板或B〇A 基板來說，在同一塊基板上的彩色濾光薄膜與其下薄膜（即 主動元件陣列中的圖案化薄膜）之間的誤對準問題 (=iis-alignment iSsue)通常會影響到顯示品質以及產品良 ''因此如何快速地判定出是否有誤對準的問題，並判 辦出誤對準的程度是否在容許範H是目前研發者關 >主的問題之一。 【發明内容】34055twf.doc/I 201135333 VI. Description of the Invention: [Technical Field] The present invention relates to a halogen structure and alignment mark, and more particularly to a defect that is easy to detect mis-alignment Prime structure and alignment marks. [Prior Art] With the advancement of display technology, people can make life more convenient by the aid of the display. In order to make the display light and thin, the flat panel display (FPD) has become the mainstream. Among many flat-panel displays, liquid cryStal displays (LCDs) have excellent characteristics such as high space utilization efficiency, low power consumption, no radiation, and low electromagnetic interference. Therefore, liquid crystal displays are popular among consumers. In a general liquid crystal display, an active array substrate (COA) incorporating a color filter film and an active device array substrate (BOA) incorporating a black matrix are currently in the mainstream. In the case of the existing c〇A substrate or B〇A substrate, misalignment between the color filter film on the same substrate and the underlying film (ie, the patterned film in the active device array) (=iis- Alignment iSsue) usually affects the display quality and the product's goodness. So how to quickly determine whether there is misalignment, and whether the degree of misalignment is within the allowable range is the current developer's level. One of the problems. [Summary of the Invention]
201135333 AU0912093 34055twf.d〇c/I 本發明提供一種晝素沾 區域處的誤對準的程度是否超出g於^地檢測出電容 本發明另提供一種對 ^圍。 對準的程度是否超出容許範圍"^。己，有助於快速地檢測出鴿 本發明提出一種晝|6士 電極、電容上電極、保ϋ、°構包括主動元件、電容下 電容下電極具有開口 Γ電衫色濾光薄膜以及晝素電極。 並與主動元件電性連接。電容下電極上方， 動元件、電容下電極與嘗配置於保護層上以覆蓋主 光薄臈具有接觸窗/而接d二’其中保護層與彩色濾 上電極的部分區域。金自位於開口上方並暴露出電容 透過接觸窗與電容上二極配置於彩色渡光薄膜上，益 於開口的側壁與電容上電二^之;_的側壁位 積例所述之畫素結構，上述之開口的面 上電極的面t 積，而接觸窗的面積例如小於電容 依,、?、本發明貫施例 士 :r緣例如位於電容下綱外：接= 接例===狀_構，上敎電容下電 於電施酬述之4素結構，還μ包括配置 电合·下电極與電容上電極之間的介電層。 又…、本發明貫施例所述之晝素結構，還可以包括配置201135333 AU0912093 34055twf.d〇c/I The present invention provides a method for detecting whether or not the degree of misalignment at a region of a halogen coating exceeds g. Whether the degree of alignment is outside the allowable range "^. Having helped to quickly detect the pigeons. The invention proposes a 昼|6 士 electrode, a capacitor upper electrode, a ϋ ϋ, a structure including an active element, a capacitor lower electrode, an electrode having an opening, a shirt color filter film, and a halogen electrode. And electrically connected with the active components. Above the lower electrode of the capacitor, the movable element and the lower electrode of the capacitor are disposed on the protective layer to cover the main light thin layer, and have a contact window/and a portion of the protective layer and the color filter upper electrode. The gold is located above the opening and exposes the capacitance through the contact window and the upper electrode of the capacitor is disposed on the color light-transmissive film, which is beneficial to the sidewall of the opening and the power-on of the capacitor; the pixel structure described in the sidewall product example of _ The surface t of the surface electrode of the opening is the same, and the area of the contact window is, for example, less than the capacitance, and the embodiment of the present invention: the edge of the r is, for example, located outside the capacitor: connection = connection === shape _ The upper 敎 capacitor is powered down by the electric structure of the electric energy, and the μ layer includes a dielectric layer disposed between the lower electrode and the upper electrode of the capacitor. Moreover, the halogen structure described in the embodiment of the present invention may further include a configuration.
201135333 /vuu^izu^J 34055twf.doc/I 於彩=晝素電極之間的覆蓋層(。一)。 、清光薄^之主二對準標記，適於製作於整合有彩色 慮先賴之主動TL件陣列基板上，其中整 膜之主動元件陣列基板包括第__ 口 y ，思溥 化導電層以及多個彩案導電層、第二圖案 案、第二_及第三以括第-【 之材質與第—圖案化導電層之材質實質上相 :。第-圖案具有第二開口且位於第_圖案上方，直中第 =之材質與第二圖案化導電層之材質實質上相同。第 二圖案位於第一開口與第二開口上方，其 m、光薄膜之材質實質上相同，且第三圖案ξ外緣 位於苐-開口的侧壁與第二開口的側壁之間。 依照本發明實施例所述之對準標記，上述之第一開口 圖案的面積，而第三圖案的面積例如 例如實述之對準標記’上述之第-開口 /幵而弟一開口例如為矩形開口。 例如:之對準標記’上述之第-開口 』如為十予關口，而苐二開σ例如為十字形開口。 於第實3所述之對準標記，還可以包括配置 、弟圖案與第一圖案之間的介電層。 依2發明實施靖述之鱗標記，射以包括覆蓋 於弟二圖案上的保護層。 依照本發明實施綱述之對準標記，還可以包括第一 d度圖案(_Uati〇npattem)以及第二刻度圖案，其中第一201135333 /vuu^izu^J 34055twf.doc/I Yucai = cover layer between the electrodes of alizarin (.1). The main alignment mark of the clearing light is suitable for being fabricated on an active TL device array substrate integrated with color considerations, wherein the active film array substrate of the whole film includes the __ port y, the reflective conductive layer and The plurality of color-coded conductive layers, the second pattern, the second and third materials, and the material of the first-patterned conductive layer are substantially: The first pattern has a second opening and is located above the first pattern, and the material of the straight middle = is substantially the same as the material of the second patterned conductive layer. The second pattern is located above the first opening and the second opening, wherein the material of the light film is substantially the same, and the outer edge of the third pattern is located between the sidewall of the 苐-opening and the sidewall of the second opening. The alignment mark according to the embodiment of the present invention has an area of the first opening pattern, and the area of the third pattern is, for example, an alignment mark of the above-mentioned first opening/幵, and the opening is, for example, a rectangle. Opening. For example, the alignment mark 'the above-mentioned first opening' is a ten-point opening, and the second opening σ is, for example, a cross-shaped opening. The alignment mark of the third embodiment may further include a dielectric layer between the configuration pattern and the first pattern. According to the invention of 2, the scale mark of the stipulation is implemented, and the shot includes a protective layer covering the pattern of the second. The alignment mark according to the implementation of the present invention may further include a first d-degree pattern (_Uati〇npattem) and a second scale pattern, wherein the first
201135333 AU0912093 34055twf.doc/I 刻度圖案之材質與第— _ 之材質實質上翻 θ *化導電層或苐二圖案化導電層 膜之材質實質上相同而第二刻度圖案之材質與糊光薄 基於上述’在本發明的一實施例中，由於 是;二==則彩色細膜的接觸窗的側壁 g判定形成彩色濾光;:=對; 中進行重複^ 巧純規格，且可在生產過程 進柄此外，在本發明的另—實施例中，同樣可藉由檢繼 上二中:外^案€其材質與彩色濾光薄膜之材質實質 相Π)的外緣疋否位於第—圖案的開口的 :===判梅光_時的= 汽一為讓本發明之上述特徵和優點能更明顯易懂，下文特 牛貫施例，並配合所附圖式作詳細說明如下。 、 【實施方式】 _ 圖1A為依照本發明實施例所繪示的晝素結構之上視 不意圖。圖1B為沿圖1A中的I-Ι，剖線所繪示的剖面示意 圖。在本實施例中’為了便於說明’僅繪示出—個晝素區二 此晝素區具有二個晝素電極’且對應設置有二個主動元 件。當然’視實際設計需求，畫素區也可以僅具有一個或 更多個晝素電極，且設置依實際設計需求的主動元件。此201135333 AU0912093 34055twf.doc/I The material of the scale pattern is substantially the same as the material of the first _ material, and the material of the second scale pattern is based on the material of the second scale pattern. In the above embodiment, in one embodiment of the present invention, the second side of the contact window of the color thin film is determined to form a color filter; In addition, in another embodiment of the present invention, the outer edge of the upper second: the external material is substantially opposite to the material of the color filter film. The above-mentioned features and advantages of the present invention are more apparent and easy to understand. The following is a detailed description of the following examples in conjunction with the drawings. [Embodiment] FIG. 1A is a schematic view of a halogen structure according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view taken along line I-Ι of Fig. 1A. In the present embodiment, 'for convenience of explanation', only one pixel region is shown. This halogen region has two halogen electrodes' and is correspondingly provided with two active elements. Of course, depending on the actual design requirements, the pixel area can also have only one or more elementary electrodes, and set the active components according to the actual design requirements. this
201135333 Auuy uuyi 34055twf.doc/I 外，為了使圖式清晰，圖1A中省略了部分的膜層，如介 電層106、覆蓋層114等。 請同時參闕11B，晝素結構1〇位於基板1〇〇 上。晝素結構ίο包括主動元件1〇2、圖案化導電層1〇4、 化導電層1〇8、保護層110、彩色濾光薄 _後孤層114以及晝素電極116。主動元件102例如 為Γ ί ΐΐ 體(thin fIlm tmnsistQr，TFT)，其具有閘極(未緣 不）、s 102a、源極1〇8c與汲極1〇8d等。圖 容下電極刚a、相互平行的掃描線刚b、主 八二η 01*白1閘極以及作為共通線(c〇mm〇n iine)的導電部 ^ θ ,t 下電極104a具有開口 l〇4a，。開口 104a，意 下電極1G4a之材料於預定要形成開口術 Γο 而可以暴露出其下的膜層(未標示)或基板 此於^! 如例如為環形電容下電極，但不限於 此。於/、匕貫施例中，電容下電極104a可為Η型、U I型、S型等等。圖荦化導雷； 1 極108c以及導雷邱八繼動;^件1〇2的源極108d姐 位於雷ϋ導卩分職、祕⑽g。電容上電極論 4於電今下電極1〇4a上方，並藉由導電 動元件102的汲極108d電性連 /、 腿會覆蓋如謝上方^上電極 =士:介電層腕的部份區域。掃描線娜與資料 m而在基板100上定義出畫素區1心與ui 丨1G2則分別對應於晝素區㈣與·， 、刀$性連接到所對應的掃描線104b與資料線201135333 Auuy uuyi 34055twf.doc/I In addition, in order to make the drawing clear, part of the film layer, such as dielectric layer 106, cover layer 114, etc., is omitted in FIG. 1A. Please refer to 11B at the same time, and the unitary structure 1〇 is located on the substrate 1〇〇. The pixel structure ίο includes an active device 1〇2, a patterned conductive layer 1〇4, a conductive layer 1〇8, a protective layer 110, a color filter thin layer _ a rear isolated layer 114, and a halogen electrode 116. The active device 102 is, for example, a thin fIlm tmnsist Qr (TFT) having a gate (not edge), s 102a, a source 1 〇 8c, and a drain 1 〇 8d. The lower electrode is a, the scanning line parallel to each other, the main VIII η 01* white 1 gate, and the conductive portion θ θ as a common line (c〇mm〇n iine), the lower electrode 104a has an opening l 〇 4a,. The opening 104a, the material of the lower electrode 1G4a is intended to form an opening Γο, and the underlying film layer (not shown) or the substrate may be exposed. For example, it is a ring capacitor lower electrode, but is not limited thereto. In the embodiment, the capacitor lower electrode 104a may be a Η type, a U I type, an S type, or the like. Figure 荦化导雷; 1 pole 108c and guide mine Qiu Ba relay; ^ 1〇2 source 108d sister located in Thunder guide division, secret (10) g. Capacitor upper electrode theory 4 is above the electric lower electrode 1〇4a, and is electrically connected by the drain 108d of the conductive moving element 102. The leg will cover the upper part of the upper electrode = the upper part of the dielectric layer wrist region. The scan line Na and the data m define a pixel area 1 on the substrate 100 and ui 丨 1G2 respectively correspond to the pixel area (4) and ·, and the knife is connected to the corresponding scan line 104b and the data line.
201135333 AU0912093 34055twf.doc/I 108b。此外，介電層106配置於基板1〇〇上，以覆蓋圖案 化導電層104以及被開口 104a，所暴露的基板1〇〇。另外^ 保護層110覆蓋介電層1〇6、主動元件1〇2、圖案化導電層 104、108。上述的基板1〇〇、主動元件ι〇2、圖案化導體層 104與108、介電層1〇6、保護層11〇的詳細配置關係及^ 材料為本領域技術人員所熟知，且其配置方式並不限於本 發明圖式所示，故於此不另行說明。 彩色濾光薄膜112配置於保讓層11〇上，以覆蓋主動 το件102、電容下電極104a與電容上電極.1〇8&。保護層 110與彩色濾光薄膜112具有接觸窗120。接觸窗120位於 開口 104a’上方，並暴露出電容上電極108a的部分區域。 開口 l〇4a’的面積例如小於接觸窗12〇的面積，而接觸窗 120的面積例如小於電容上電極1〇如的面積。電容上電極 l〇8a的外緣例如位於電容下電極1〇4a的外緣與接觸窗 的側土之間。重要的疋，接觸窗12〇的側壁位於開口 1 〇4a， 的側壁與電容上電極l〇8a的外緣1〇8a，之間。在本實施例 中，開口 104a，的側壁與電容上電極1〇8a的外緣1〇8&，之 間的距離即為形成彩色濾光薄膜112時的誤對準的容許範 圍。也就是說，在形成彩色濾光薄膜112之後，藉由檢測 接觸窗120的側壁是否位於開口 1〇乜，的側壁與電容上電 極108a的外緣i〇8a’之間即可迅速地判定產品是否符合規 格，且可在生產過程中進行重複確認。當接觸窗 120的側 ^位於開口 l〇4a’的側壁與電容上電極1〇如的外緣i〇8a， 之間時(誤料程度未超丨料範圍），則可狀為符合規 格，田接觸面120的側壁不位於開口 1〇4a，的側壁與電容201135333 AU0912093 34055twf.doc/I 108b. In addition, the dielectric layer 106 is disposed on the substrate 1 to cover the patterned conductive layer 104 and the exposed substrate 104 by the opening 104a. In addition, the protective layer 110 covers the dielectric layer 1〇6, the active device 1〇2, and the patterned conductive layers 104 and 108. The detailed arrangement relationship of the substrate 1 〇〇, the active device ι 2, the patterned conductor layers 104 and 108, the dielectric layer 1 〇 6 , and the protective layer 11 上述 and the materials are well known to those skilled in the art, and the configuration thereof The method is not limited to the one shown in the drawings of the present invention, and therefore will not be described here. The color filter film 112 is disposed on the retaining layer 11 , to cover the active τ 102, the capacitor lower electrode 104a and the capacitor upper electrode .1 〇 8 & The protective layer 110 and the color filter film 112 have a contact window 120. The contact window 120 is located above the opening 104a' and exposes a portion of the capacitive upper electrode 108a. The area of the opening l〇4a' is, for example, smaller than the area of the contact window 12A, and the area of the contact window 120 is, for example, smaller than the area of the upper electrode 1 of the capacitor. The outer edge of the capacitor upper electrode l〇8a is located, for example, between the outer edge of the capacitor lower electrode 1〇4a and the side soil of the contact window. Importantly, the side wall of the contact window 12 is located between the side wall of the opening 1 〇 4a and the outer edge 1 〇 8a of the capacitor upper electrode 10a. In the present embodiment, the distance between the side wall of the opening 104a and the outer edge 1?8& of the capacitor upper electrode 1?8a is an allowable range of misalignment when the color filter film 112 is formed. That is, after the color filter film 112 is formed, the product can be quickly determined by detecting whether the sidewall of the contact window 120 is located between the sidewall of the opening 1 and the outer edge i 8a of the capacitor upper electrode 108a. Compliance with specifications and repeated confirmation during production. When the side of the contact window 120 is located between the side wall of the opening 10a'a and the outer edge i〇8a of the capacitor upper electrode 1, for example, the degree of error does not exceed the range of the material, the shape can be conformed to the specification. The sidewall of the field contact surface 120 is not located at the opening 1〇4a, the side wall and the capacitor
201135333 34055twf.doc/I 上電極108a的外緣l〇8a，之間時(誤對準程度超出容許範 圍），則判定為不符合規格。值得注意的是，開口 1〇4a，的 侧壁與電谷上電極l〇8a的外緣i〇8a，之間的距離可以依照 產品的規格而做適度的調整。 #晝素電極116配置於彩色濾光薄膜112上，並透過接 觸® 120與電容上電極1〇8a電性連接。在一實施例中，晝 /η電極116可以疋具有微狹缝(丘ne 5出)的晝素電極。此 =在本實施例中，較佳地，覆蓋層114配置於彩色渡光 薄膜上12與4素電極116之間’而在其他實施例中也可以 將覆蓋層114省略。 承拍此外、對於整合有彩色濾、光薄膜之主動元件陣列基板 二遠木取與上述貫施例相同的方式’經由位於基板 圍:°°°域的對準標絲檢測誤對準程度是否超出容許範 視示i依照本發明—實施例騎示的對準標記之上 干:ί二圖2B為沿圖2A中的Η·11，剖線所緣示的剖面 Ϊ"^：ΪΓ2Α^2Β5^" 200 ^ 204上。之主動元件陣列基板皿的周邊區域 括第-元件陣列基板202包 層(用以作為電容 认線料）、第-圖案化導電 源極與汲極等等平行的資料線、主動元件的 說明，圖2A _ 2=f $膜以及畫素電極。為了便於 圖案化導電層、第_^未纟17^製作於晝素區内的第- 一圖案化導電層、彩色濾光薄膜以及晝 201135333201135333 34055twf.doc/I When the outer edge l8a of the upper electrode 108a is between (when the degree of misalignment exceeds the allowable range), it is determined that the specification is not in compliance with the specification. It is to be noted that the distance between the side wall of the opening 1〇4a and the outer edge i〇8a of the upper electrode 8a of the electric valley can be appropriately adjusted according to the specifications of the product. The pixel electrode 116 is disposed on the color filter film 112, and is electrically connected to the capacitor upper electrode 1A8a through the contact sensor 120. In one embodiment, the 昼/η electrode 116 may be a ruthenium electrode having a micro slit (the nucleus). In the present embodiment, preferably, the cover layer 114 is disposed between the phototransistor film 12 and the 4-electrode 116, and the cover layer 114 may be omitted in other embodiments. In addition, for the active device array substrate integrated with the color filter and the light film, the same method as the above-mentioned embodiment is used to detect whether the degree of misalignment is detected via the alignment mark located in the periphery of the substrate: °°° Exceeding the permissible range i is in accordance with the present invention - the embodiment of the above-mentioned alignment mark is dry: ί 2 Figure 2B is the Η·11 along the line of Figure 2A, the section 缘"^:ΪΓ2Α^2Β5 ^" 200 ^ 204. The peripheral region of the active device array substrate includes a description of the data line and the active component of the first-element array substrate 202 cladding layer (for use as a capacitor wire), the first-patterned conductive power source and the drain electrode, and the like. Figure 2A _ 2 = f $ film and pixel electrodes. In order to facilitate the patterning of the conductive layer, the first patterned conductive layer, the color filter film, and the germanium are produced in the halogen region.
Αϋυ，α〇93 34055twf.doc/I 素電極。 對準標記2〇〇包括圖安 圖案206具有開口島J 0安6、H以及圖案21〇。 導電層之材質實質上相同，質與第-圖案化 化導電層可在同-製程步=案例如與第-圖案 208a且位於圖案2〇6上方，，成岛圖市208具有開口 二圖案化導電層之材質實質^圖” 208之材質例如與第 圖案化導電層可在同—㈣:目同’亦即圖案208.與第二 卩I與開口施例:皆施例中’ 開口 206a與開口 208a上方，:士回办 圖案2丨〇位於 彩色濾光薄膜之材質實質上〃中圖木之材質例如與 光薄膜可在同4;;;=’=，與彩色遽 ;卜，一a的侧壁壁，的 ^兄，開口 206a的面積例如小 了二之間。換句 210的面積例如小於開口 2〇8的面=冰積，而圖案 圖案置，之間還配置有介電二 -置於被開口 206a所暴露出的美 電層212 二其中介電層212之材質例如“料1 =住圖案 =二圖案化導電層之間的介電；：導電層 :之;的介電層可在同-製程步驟^成以電 中還可以於圖案208上的覆莒一 A靶例 g他實施例中也可以將覆蓋層心 於圖案208、圖案2U)與介電層=例中’ 旦素電極相同的膜層（未繪示）， 日-置材質與 )亦即此膜層與晝紊_可Αϋυ, α〇93 34055twf.doc/I element electrode. The alignment mark 2A includes a figure 206 having an opening island J0, 6, and a pattern 21A. The material of the conductive layer is substantially the same, and the quality and the first patterned conductive layer can be in the same-process step=case, for example, and the first-pattern 208a and above the pattern 2〇6, and the island map 208 has an opening pattern. The material of the conductive layer is substantially the same as that of the first patterned conductive layer, for example, the same as the fourth layer: the same pattern, that is, the pattern 208. and the second layer I and the opening embodiment: in both embodiments, the opening 206a and Above the opening 208a, the material of the color filter film is substantially the same as that of the light film, for example, the light film can be in the same 4;;====, with color 遽; The wall of the side wall, the area of the opening 206a is, for example, between two. The area of the sentence 210 is, for example, smaller than the surface of the opening 2〇8=ice product, and the pattern is placed with the dielectric II interposed therebetween. - placed in the electrical layer 212 exposed by the opening 206a. The material of the dielectric layer 212, for example, "Material 1 = live pattern = dielectric between the two patterned conductive layers;: conductive layer: the dielectric; The layer may be in the same-process step, and may also be applied to the pattern 208 on the pattern 208. In the embodiment, the layer may also be used. Heart capping layer 208 in a pattern, the pattern 2U) = the dielectric layer embodiment 'of the same denier pixel electrode layer (not shown), - The set of material) and Day i.e. this layer can be tangled _
201135333 34055twf.doc/I 在同一製程步驟中形成。 在本實施例中，開口 206a的側壁與開口 208a的側壁 之間的距離即為即為形成圖案210時的誤對準的容許範 圍。換句話說，藉由檢測形成圖案210時的誤對準程度可 判定形成彩色濾光薄膜時的誤對準程度是否超出容許範 圍。當圖案210的外緣位於開口 206a的側壁與開口 208a 的側壁之間時(誤對準程度未超出容許範圍），則判定為符 合規格；當圖案2丨0的外緣不位於開口 2〇6a的側壁與開口 208a的側壁之間時(誤對準程度超出容許範圍），則判定為 不符合規格。因此，藉由檢測圖案21〇的外緣是否位於開 口 206a的側壁與開口 2〇8a的側壁之間即可迅速地判定產 品是否符合規格，且可在生產過程中進行重複確認。 在上述只施例中，開口 206a與開口 208a皆為矩形開 口，而在其他實施例中，開口 2〇6a與開口 2〇8&也可以是 其他形狀的開口，例如方形、菱形、五邊形、六邊形等等。 、一，3為依照本發明另一實施例所繪示的對準標記之上 =意圖。請參照圖3 ’對準標記3⑻與對準標記細的 安在於：在對準標記300中，圖案206的開口 206b盥圖 案208的開口 208b皆為十字形開口。 到千标把與對準標記300還可以包括刻度 :ί:Π;=02’.如圖4所示:刻度圖案彻之 、= •木冬电層或第一圖案化導電層之材質實質 二=度圖案_與第一圖案化導電層或第二圖 :W層可在同—製程步驟中形成。刻度 術 …衫色遽光薄膜之材質實質上相同，亦即刻度圖案402 201135333201135333 34055twf.doc/I Formed in the same process step. In the present embodiment, the distance between the side wall of the opening 206a and the side wall of the opening 208a is an allowable range of misalignment when the pattern 210 is formed. In other words, by detecting the degree of misalignment when the pattern 210 is formed, it can be judged whether or not the degree of misalignment when forming the color filter film exceeds the allowable range. When the outer edge of the pattern 210 is located between the side wall of the opening 206a and the side wall of the opening 208a (the degree of misalignment does not exceed the allowable range), it is determined to conform to the specification; when the outer edge of the pattern 2丨0 is not located at the opening 2〇6a When the side wall and the side wall of the opening 208a (the degree of misalignment exceeds the allowable range), it is determined that the specification is not met. Therefore, by detecting whether or not the outer edge of the pattern 21 is located between the side wall of the opening 206a and the side wall of the opening 2?8a, it is possible to quickly judge whether the product conforms to the specification and repeat the confirmation during the production process. In the above embodiment, the opening 206a and the opening 208a are both rectangular openings, and in other embodiments, the opening 2〇6a and the opening 2〇8& may also be other shapes of openings, such as a square, a diamond, a pentagon , hexagons, etc. , one, and three are above the alignment mark according to another embodiment of the present invention. Referring to Fig. 3, the alignment mark 3 (8) and the alignment mark are fine: in the alignment mark 300, the opening 206b of the pattern 206 and the opening 208b of the pattern 208 are both cross-shaped openings. The scale to the 1000 mark and the alignment mark 300 may further include a scale: ί: Π; =02'. As shown in FIG. 4: the scale pattern is complete, = • the material of the wood winter electric layer or the first patterned conductive layer is substantially two The degree pattern _ is associated with the first patterned conductive layer or the second pattern: the W layer can be formed in the same-process step. The material of the shirt coloring film is substantially the same, that is, the scale pattern 402 201135333
AU0912093 34055twf.doc/I 與彩色濾光薄膜可在同一製程步驟中形成。藉由刻度圖案 400與刻度圖案402可進一步檢測出誤對準程度的數值。 換句話說，刻度圖案400與刻度圖案4〇2是否對應即可判 斷出二者的誤對準程度。 〜 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬技術領域中具有通常知識者，在不脫離 本發明之精神和範圍内，當可作些許之更動與潤飾，故本 _ 發明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1A為依照本發明實施例所繪示的晝素結構之上視 示意圖。 圖1B為沿圖1A中的Ι-Γ剖線所緣示的剖面示意圖。 圖2A為依照本發明一實施例所繪示的對準標記之上 視不意圖。 圖2B為沿圖2A中的Π-Π，剖線所繪示的剖面示意圖。 φ 圖3為依照本發明另一實施例所繪甲的對準標記之上 視示意圖。 . 圖4為本發明之對準標記中的刻度圖案之上視示意 圖。 【主要元件符號說明】 1〇 :晝素結構 100 :基板 102 :主動元件 13AU0912093 34055twf.doc/I can be formed in the same process step as the color filter film. The value of the degree of misalignment can be further detected by the scale pattern 400 and the scale pattern 402. In other words, whether or not the scale pattern 400 corresponds to the scale pattern 4〇2 can judge the degree of misalignment between the two. The present invention has been disclosed in the above embodiments, but it is not intended to limit the invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of protection of this invention is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a top plan view of a halogen structure according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along the line Ι-Γ in Fig. 1A. FIG. 2A is a schematic view of an alignment mark according to an embodiment of the invention. 2B is a cross-sectional view taken along line Π-Π of FIG. 2A. φ Figure 3 is a top plan view of an alignment mark of a nail according to another embodiment of the present invention. Figure 4 is a top plan view of a scale pattern in an alignment mark of the present invention. [Main component symbol description] 1〇: Alizarin structure 100: Substrate 102: Active component 13
201135333 Auuyjuuyi 34055twf.doc/I 102a :通道層 104、108 :圖案化導電層 104a :電容下電極 104a’、206a、206b、208a、208b :開口 104b :掃描線 104d、108e、108f、108g :導電部分 106、212 :介電層 108a :電容上電極 108a’ ：外緣 _ 108b :資料線 108c :汲極 108d :源極 110 :保護層 112 :彩色濾光薄膜 114 :覆蓋層 116 :晝素電極 118a、118b :晝素區 φ 120 :接觸窗 200、300 :對準標記 202 :整合有彩色濾光薄膜之主動元件陣列基板 204 :周邊區域 206、208、210 :圖案 400、402 :刻度圖案 14201135333 Auuyjuuyi 34055twf.doc/I 102a: channel layer 104, 108: patterned conductive layer 104a: capacitor lower electrode 104a', 206a, 206b, 208a, 208b: opening 104b: scan line 104d, 108e, 108f, 108g: conductive portion 106, 212: dielectric layer 108a: capacitor upper electrode 108a': outer edge _ 108b: data line 108c: drain 108d: source 110: protective layer 112: color filter film 114: cover layer 116: halogen electrode 118a , 118b : halogen region φ 120 : contact window 200 , 300 : alignment mark 202 : active device array substrate 204 integrated with color filter film : peripheral regions 206 , 208 , 210 : pattern 400 , 402 : scale pattern 14