201131642 •發明說明： 【發明所屬之技術領域】 本發明係關於一種載置有被施予電裝處理的基 之基板載置台的溫度控制方法及溫度控制系統。土 【先前技術】 ，基施予絲處理之基板處縣置係具備 有.处理室：係作為收納該晶圓之減壓室；噴淋頭，係 將處理氣體導入至該處理室内；以及晶座(載置台广係 於，理室内與喷_呈對向配置，並較有晶圓且對處 =内，加高頻電功率。被導人至處理室内的處理氣體 會藉由高頻電功率而被激發形成電漿，並使用該電聚^ 之陽離子或自由基來進行晶圓之電漿處理。 曰被施予電漿處理之期間，晶圓會受到來自該電渡的 熱置而使溫度上昇。當晶圓之溫度上昇時，會改變該晶 圓上之自由基分布，又’於晶圓處之化學反應之反應速 度會產生變化。因此，於電漿處理時為了獲得所期望之 結果，便需要控制晶圓之溫度，更具體來說，即是控制 用以載置晶圓之晶座本身的溫度。 於疋，近年來，於基板處理裝置中，為了控制晶座 的溫度，晶座便於其内部具有電熱加熱器與冷媒流道。 %熱加熱器會加熱晶座，而流通於冷媒流道之冷媒則藉 由將晶座的熱傳遞至外部來冷卻晶座。此時，要正確地 控制冷媒溫度或流量雖會有困難，但由於可正確地控制 201131642 傳熱加熱益的發熱篁，故亦可於基板處理裝置中讓冷媒 流道經常流通有冷媒，並依需要讓電熱加熱器發熱來正 確地調整晶座溫度(例如參考專利文獻丨：日本專利特 平7-183276號公報）。 但是，刖述基板處理裝置中，由於冷媒流道經常流 通有冷媒，因此讓電熱加熱器發熱來使晶座溫度上昇 時，來自電熱加熱器之熱量的一部分便會被流通於冷媒 流道之冷媒而朝晶座之外部傳遞，導致晶座溫度上昇， 更進步會導致晶圓溫度上昇黉時的問題。又？由於來 自電熱加熱器的熱量並非完全用於使晶座溫度上昇，亦 會有熱能損失較大的問題。 【發明内容】 本發明之目的係提供一種基板載置台之溫度控制 方法系統及溫度控制系統，其可迅速地使基板溫度上 昇，且減少熱能損失。 為達成上述目的，申請專利範圍第1項之基板載置 台的溫度控制方法，係於内建有加熱單元與冷媒流道， 亚，置有被施予特定處理的基板之基板載置台中 ，使冷 媒，過該冷媒流道；其特徵在於具有以下步驟：於該加 熱單70發熱時，使該冷媒的流動停止之冷媒流動停止步 驟。 /申請專利範圍第2項之基板載置台的溫度控制方 法係使用申請專利範圍第1項之溫度控制方法，其中該 4 201131642 冷媒流動停止步驟中，係使較該冷媒要高溫 入該冷媒流道。 丑机 、申請專利範圍第3項之基板載置台的溫度控制方 法係使用中請專利範圍第1或2項之溫度控制方法，其 中該基板載置台頂部係形成有用以載置該基板之載置、 = 該基板載置台係更進—步地内建有與該冷媒流道相 、—通之冷媒室，從上方依序配置有該載置面、該加熱單 媒室，該冷媒流動停止步驟中，係使氣體流入 该冷媒至_於該冷媒室_上部形成有氣體層。 申凊專利範圍第4項之基板載置台的温度控制方 >係使用中請專利範圍第3項之溫度控制方法’其係藉 加壓後的兩溫氣體來形成該氣體層。 申請專利範圍第5項之基板載置台的溫度控制方 法係使用=請專利範圍第4項之溫度控制方法，其中該 加壓後的高溫氣體係由該冷媒的蒸氣所構成。 申明專利Iil圍第6項之基板載置台的溫度控制方 法係使料請翻制第3項之溫度㈣方法，其中該 冷媒流動停止步驟中，係藉由將該冷媒室的冷媒加熱彿 騰所產生之該冷媒的蒸氣來形成該氣體層。 申請專利範圍第7項之基板載置台二溫度控制方 法係使用申請專利範圍第1或2項之溫度控制方法，其 中祕板載置台頂部係形成有用以載置該基板之載置 面；該基板《台係更進-步地内建有與該冷媒流道相 連通之冷媒室；從上方依序配置㈣魅面、該加熱單 201131642 元及該冷媒室；該冷媒流動停止步驟中，係使複數個絕 熱粒狀物流入該冷媒室内而於該冷媒室上部形成有絕 熱層。 申請專利範圍第8項之基板載置台的溫度控制方 法係使用申請專利範圍第7項之溫度控制方法，其中於 加熱該複數個絕熱粒狀物後，係藉由該加熱後的高溫該 絕熱粒狀物來形成該絕熱層。 為達成上述目的’申請專利範圍第9項之基板載置 台之溫度控制系統係基板載置台内建有加熱單元、冷媒 流道及與該冷媒流道相連通之冷媒室，並於頂部形成有 載置有被施予特定處理的基板之載置面，且從上方依序 配置有該載置面、該加熱單元及該冷媒室來使冷媒流過 該冷媒流道及該冷媒室；其特徵在於具有氣體層形成裝 置’係於當該加熱单元發熱且該冷媒的流動停止時，使 氣體流入該冷媒室内，以於該冷媒室内上部形成有氣體 層。 申s青專利範圍第1〇項之基板載置台的溫度控制系 統係使用申請專利範圍第9項之溫度控制系統，其中該 氣體層形成裝置係具有用以加熱該氣體之加熱裝置，以 藉由該加熱後的高溫該氣體來形成該氣體層。 為達成上述目的，申請專利範圍第n項之板載置 台之溫度控制系統係基板載置台内建有加熱單元、冷媒 流道及與該冷媒流道相連通之冷媒室，並於頂部形成有 載置有被知予特定處理的基板之載置面，且從上方依序 6 201131642 配置有該載置面、該加熱單元及該冷媒室來使冷媒流過 5亥冷媒流道及該冷媒室；其特徵在於具有絕熱層形成裝 置，係於當該加熱單元發熱且該冷媒的流動停止時，使 複數個絕熱粒狀物流入該冷媒室内，以於該冷媒室上部 形成有絕熱層。 申請專利範圍第12項之基板载置台的溫度控制方 法係使用申請專利範圍第11項之溫度控制方法，其中 該絕熱層形成裝置係具有用以加熱該絕熱粒狀物之加 熱裝置，以藉由該加熱後的高溫該絕熱粒狀物來形成該 絕熱層。 依申凊專利範圍第1項之基板載置台的溫度控制 方法，由於係在加熱單元發熱時停止冷媒的流動，故來 自加熱單元之熱量的一部分不會因冷媒而被傳遞至基 板載置台外部。藉此，便能夠有效率地將來自加熱單元 的熱1用於使基板載置台的溫度上昇，從而迅速地使基 板溫度上昇並減少熱能損失。 依申請專利範圍第2項之基板載置台的溫度控制 方法，由於係在加熱單元發熱且停止冷媒的流動時，使 較冷媒要高溫的媒介體流入冷媒流道，故不僅是來自加 熱單元的熱量，而亦可藉由高溫媒介體的熱量來加熱基 板載置台，且可減少被媒介體奪走之來自加熱單元的熱 量，而將來自加熱單元的熱量更有效率地用於使基板載 置台的溫度上昇’從而更迅速地使基板溫度上昇。 依申請專利範圍第3項之基板載置台的溫度控制 201131642 方法及申請專利範園第9項之基板載置台的溫度控制 系統’係在加熱單元發熱且停止冷媒的流動時，於冷媒 室内的上部形成有氣體層。由於該氣體層係存在於加熱 單元與冷媒室的冷媒之間，來將加熱單元自冷媒予以熱 隔離’故可將來自加熱單元的熱量更有效率地用於基板 載置台的溫度上昇。 依申睛專利範圍第4項之基板載置台的溫度控制 方法及申睛專利範圍第1 〇項之基板載置台的溫度控制 系統，由於係藉由高溫氣體而形成有氣體層，故不僅是 來自加熱單元的熱量’而亦可藉由氣體層的熱量來加熱 基板載置台，且可減少被氣體層奪走之來自加熱單元的 熱量’而將來自加熱單元的熱量更有效率地用於使基板 載置台的溫度上昇，從而更迅速地使基板溫度上昇。 依申請專利範圍第5項之基板載置台的溫度控制 方法，形成氣體層之加壓後的高溫氣體係由冷媒的蒸氣 所構成。被基板載置台奪走熱量而使得溫度降低之蒸氣 會凝縮而成為冷媒，並與先前即存在於冷媒流道之冷媒 混合。因此，基板溫度上昇後，由於不需回收蒸氣，可 省卻作業者等的手續，且冷媒的濃度等不會變化，故可 防止冷媒所造成的冷卻性能變化。 依申請專利範圍第6項之基板載置台的溫度控制 方法，由於係藉由將冷媒室的冷媒加熱彿騰所產生之冷 媒的蒸氣來形成氣體層，故不需從外部注入蒸氣等。 又，被基板載置台奪走熱量而使得溫度降低之蒸氣會凝 8 201131642 縮而回到原先的冷媒。因此，基板溫度上昇後，不需回 收冷媒的療氣，可省卻作業者等的手續且冷媒的濃度等 不會變化，故可防止冷媒所造成的冷卻性能變化。 依申請專利範圍第7項之基板載置台的溫度控制 方法及申請專利範圍第11項之基板載置台的溫度控制 系統，係在加熱單元發熱且停止冷媒的流動時，於冷媒 至内的上部形成有複數個絕熱粒狀物所構成之絕熱 層。由於該絕熱層係存在於加熱單元與冷媒室的冷媒之 間，來將加熱單元自冷媒加以熱隔離，故可將來自加熱 單元的熱量更有效率地用於基板載置台的溫度上昇。 依申請專利範圍第8項之基板載置台的溫度控制 方法及申請專利範圍第12項之基板載置台的溫度控制 系統，由於係藉由加熱後的高溫絕熱粒狀物而形成有絕 熱層，故不僅是來自加熱單元的熱量，而亦可藉由絕熱 層的熱量來加熱基板載置台，且可減少被絕熱層奪走之 來自加熱單元的熱量，而將來自加熱單元的熱量更有效 率地用於使基板载置台的溫度上昇，從而更迅速地使基 板溫度上昇。 【實施方式】 以下’參考圖式來詳細說明本發明實施形態。 首先’針對本發明第1實施形態之基板載置台的溫 度控制方法加以說明。 圖1為概略顯示應用本發明第1實施形態之基板载 201131642 置口的脈度才工制方法之基板處理裝置的結構之到面 圖。本基板處理裝置係對作為基板之半導體元件用晶圓 (以下僅稱作「晶圓」）施予電裝钮刻處理。 。圖1中，基板處理裝置ίο具有收納半導體元件用 晶圓w的處理室u，該處理室u内之下部配置有圓拄 狀晶座12(基板載置台），又，處理室㈣之上部則與 晶座=對向般地配置有圓板狀喷淋頭13。 —阳座1=係内建有靜電爽具(圖中未顯示)、加熱器單 兀Η(加熱單元）、冷媒流道1S、及與該冷媒流道15相 連通之冷媒室16，並於頂部形成有載置晶圓w之载置 面17日日座12中，載置面17、加熱器單元14及冷媒 室16係依上述順序倾上方依序配置。 電吸藉由庫倫力等來將所載置之晶圓W靜 熱器單元14係由對應於晶座12之 大致全部區域所配置之電阻所組成，且受到來 施加電壓便會發熱，以加熱晶座心戈 该晶座12來加熱晶圓w<sA 次，、、工由 來吸收晶座12的熱量及經由該 7、BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature control method and a temperature control system for mounting a substrate stage on which a substrate to be electrically mounted is placed. Soil [Prior Art], the substrate for the treatment of the substrate is provided with a processing chamber: a decompression chamber for accommodating the wafer; a shower head for introducing a processing gas into the processing chamber; The seat is placed in the room, and the spray chamber is arranged in the opposite direction, and the wafer is placed in the opposite direction, and the high-frequency electric power is added. The process gas introduced into the processing chamber is controlled by high-frequency electric power. Excited to form a plasma, and use the cation or radical of the electropolymer to perform plasma treatment of the wafer. During the process of plasma treatment, the wafer is subjected to heat from the electric ferry to make the temperature Rising. When the temperature of the wafer rises, it changes the radical distribution on the wafer, and the reaction rate of the chemical reaction at the wafer changes. Therefore, in order to obtain the desired result in the plasma processing In order to control the temperature of the wafer itself, in recent years The seat is easy to have electric heating inside The refrigerant and the refrigerant flow path. The % heat heater heats the crystal seat, and the refrigerant flowing through the refrigerant flow path cools the crystal seat by transferring the heat of the crystal seat to the outside. At this time, the temperature or flow rate of the refrigerant is properly controlled. Although it is difficult, the heat can be properly controlled by the 201131642 heat transfer heating. Therefore, the refrigerant flow path can be constantly circulated with refrigerant in the substrate processing device, and the electric heater can be heated to properly adjust the crystal as needed. For example, in the substrate processing apparatus, since the refrigerant flow path often flows through the refrigerant flow path, the electric heater is heated to raise the temperature of the crystal holder. At this time, a part of the heat from the electric heater is transmitted to the outside of the crystal seat through the refrigerant flowing through the refrigerant flow path, causing the temperature of the crystal holder to rise, and the progress of the wafer temperature rises. The heat from the electric heater is not completely used to raise the temperature of the crystal holder, and there is also a problem that the heat energy loss is large. [Invention] The object of the present invention is A temperature control method system and a temperature control system for a substrate mounting table, which can rapidly increase the substrate temperature and reduce thermal energy loss. To achieve the above object, the temperature control method of the substrate mounting table of claim 1 is The heating unit and the refrigerant flow path are built therein, and the substrate is placed on the substrate mounting table on which the substrate to be subjected to the specific treatment, and the refrigerant passes through the refrigerant flow path. The method has the following steps: heating the heating unit 70 The refrigerant flow stopping step for stopping the flow of the refrigerant. The temperature control method of the substrate stage of claim 2 is the temperature control method of the first application of the patent scope, wherein the 4 201131642 refrigerant flow stop step The temperature control method of the substrate mounting table of the third application of the patent application is the temperature control method of the first or second patent scope of the patent application, wherein the temperature control method of the substrate is higher than that of the refrigerant. The top of the substrate stage is formed to be placed on the substrate, and the substrate mounting stage is further embedded therein. In the refrigerant flow chamber, the refrigerant chamber is disposed in this order from the top, and the heating medium chamber is sequentially arranged. In the refrigerant flow stopping step, the gas flows into the refrigerant to form an upper portion of the refrigerant chamber. There is a gas layer. The temperature control method of the substrate stage of the fourth aspect of the patent application is the temperature control method of the third item of the patent application, which is formed by the pressurized two-temperature gas. The temperature control method of the substrate stage of the fifth application of the patent application is the temperature control method of the fourth aspect of the patent scope, wherein the pressurized high temperature gas system is composed of the vapor of the refrigerant. The temperature control method of the substrate mounting table of claim No. 6 of the patent Iil is to reproduce the temperature (4) method of item 3, wherein the refrigerant flow is stopped by heating the refrigerant in the refrigerant chamber. The vapor of the refrigerant is generated to form the gas layer. The substrate mounting table 2 temperature control method of claim 7 is the temperature control method of claim 1 or 2, wherein the top of the secret plate mounting table forms a mounting surface for loading the substrate; the substrate "The Taiwan system further has a refrigerant chamber connected to the refrigerant flow passage; the top side is arranged (4) the charm surface, the heating sheet 201131642 yuan and the refrigerant chamber; the refrigerant flow stop step is A plurality of heat insulating granules flow into the refrigerant chamber to form a heat insulating layer on the upper portion of the refrigerant chamber. The temperature control method of the substrate mounting table of claim 8 is the temperature control method of claim 7, wherein after heating the plurality of heat insulating particles, the heat-insulating particles are heated by the high temperature. Forming the heat insulating layer. In order to achieve the above object, the temperature control system of the substrate stage of claim 9 is a heating unit, a refrigerant flow path, and a refrigerant chamber connected to the refrigerant flow path, and a load is formed on the top of the substrate stage. The mounting surface of the substrate to which the specific treatment is applied is disposed, and the mounting surface, the heating unit, and the refrigerant chamber are sequentially disposed from above to allow the refrigerant to flow through the refrigerant flow path and the refrigerant chamber; The gas layer forming apparatus is configured to allow a gas to flow into the refrigerant chamber when the heating unit generates heat and the flow of the refrigerant stops, so that a gas layer is formed in the upper portion of the refrigerant chamber. The temperature control system of the substrate mounting table of the first aspect of the invention is the temperature control system of claim 9 wherein the gas layer forming device has a heating device for heating the gas. The heated high temperature gas forms the gas layer. In order to achieve the above object, the temperature control system of the board mounting table of the nth aspect of the patent application system has a heating unit, a refrigerant flow path, and a refrigerant chamber connected to the refrigerant flow path in the substrate mounting table, and is formed at the top. The mounting surface of the substrate known to be subjected to the specific treatment is disposed, and the mounting surface, the heating unit, and the refrigerant chamber are disposed in sequence from the top 6 201131642 to allow the refrigerant to flow through the 5H refrigerant flow passage and the refrigerant chamber; The heat insulating layer forming device is characterized in that when the heating unit generates heat and the flow of the refrigerant stops, a plurality of heat insulating particles are caused to flow into the refrigerant chamber, and a heat insulating layer is formed on the upper portion of the refrigerant chamber. The temperature control method of the substrate mounting table of claim 12 is the temperature control method of claim 11, wherein the heat insulating layer forming device has heating means for heating the heat insulating granular material by The heated high temperature heat insulating particles form the heat insulating layer. According to the temperature control method of the substrate stage of the first aspect of the patent application, since the flow of the refrigerant is stopped when the heating unit generates heat, a part of the heat from the heating unit is not transmitted to the outside of the substrate mounting table by the refrigerant. Thereby, the heat 1 from the heating means can be efficiently used to increase the temperature of the substrate stage, thereby rapidly increasing the temperature of the substrate and reducing the heat loss. According to the temperature control method of the substrate stage according to the second aspect of the patent application, since the medium which is higher in temperature than the refrigerant flows into the refrigerant flow path when the heating unit generates heat and stops the flow of the refrigerant, not only the heat from the heating unit but also the heat from the heating unit The substrate mounting table can also be heated by the heat of the high temperature medium, and the heat from the heating unit taken away by the medium can be reduced, and the heat from the heating unit can be used more efficiently for the substrate mounting table. The temperature rises 'to increase the substrate temperature more quickly. The temperature control system of the substrate stage according to the third aspect of the patent application scope is the third embodiment of the invention, and the temperature control system of the substrate stage of the patent application section 9 is in the upper part of the refrigerant chamber when the heating unit generates heat and stops the flow of the refrigerant. A gas layer is formed. Since the gas layer is present between the heating unit and the refrigerant in the refrigerant chamber to thermally isolate the heating unit from the refrigerant, the heat from the heating unit can be more efficiently used for the temperature rise of the substrate stage. The temperature control method of the substrate mounting table according to the fourth aspect of the patent scope and the temperature control system of the substrate mounting table according to the first aspect of the invention are not only due to the formation of a gas layer by the high temperature gas. Heating the heat of the unit' can also heat the substrate mounting table by the heat of the gas layer, and can reduce the heat from the heating unit taken away by the gas layer', and the heat from the heating unit can be used more efficiently to make the substrate The temperature of the stage rises, and the temperature of the substrate rises more rapidly. According to the temperature control method of the substrate stage of the fifth application of the patent application, the pressurized high temperature gas system forming the gas layer is composed of the vapor of the refrigerant. The heat that is removed by the substrate stage causes the temperature to decrease, and the vapor is condensed to become a refrigerant, and is mixed with the refrigerant previously present in the refrigerant flow path. Therefore, since the temperature of the substrate does not need to be recovered, the procedure of the operator or the like can be eliminated, and the concentration of the refrigerant or the like does not change, so that the cooling performance change by the refrigerant can be prevented. According to the temperature control method of the substrate stage of the sixth aspect of the patent application, since the gas layer is formed by heating the refrigerant in the refrigerant chamber to the vapor of the refrigerant generated by the gas, it is not necessary to inject steam or the like from the outside. In addition, the heat is removed by the substrate mounting table, so that the vapor whose temperature is lowered will be condensed and returned to the original refrigerant. Therefore, after the substrate temperature rises, it is not necessary to recover the treatment gas of the refrigerant, and the procedure of the operator or the like can be omitted, and the concentration of the refrigerant or the like does not change, so that the cooling performance change by the refrigerant can be prevented. The temperature control method of the substrate stage according to item 7 of the patent application scope and the temperature control system of the substrate stage of claim 11 are formed in the upper portion of the refrigerant to the inside when the heating unit generates heat and stops the flow of the refrigerant. There is a heat insulating layer composed of a plurality of insulating particles. Since the heat insulating layer is present between the heating unit and the refrigerant in the refrigerant chamber to thermally isolate the heating unit from the refrigerant, the heat from the heating unit can be more efficiently used for the temperature rise of the substrate stage. The temperature control method of the substrate stage according to item 8 of the patent application scope and the temperature control system of the substrate stage of claim 12 are formed by a heat insulating layer after heating, thereby forming a heat insulating layer. Not only the heat from the heating unit, but also the heat of the heat insulating layer to heat the substrate mounting table, and the heat from the heating unit taken away by the heat insulating layer can be reduced, and the heat from the heating unit can be used more efficiently. The temperature of the substrate stage is raised to increase the temperature of the substrate more quickly. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the temperature control method of the substrate stage according to the first embodiment of the present invention will be described. Fig. 1 is a plan view showing the structure of a substrate processing apparatus which is a method for manufacturing a pulse-forming method in which a substrate-loaded 201131642 according to a first embodiment of the present invention is applied. In the substrate processing apparatus, a wafer for a semiconductor element (hereinafter simply referred to as a "wafer") as a substrate is subjected to an electrical bonding process. . In FIG. 1, the substrate processing apparatus has a processing chamber u in which a wafer w for a semiconductor element is housed, and a dome-shaped crystal holder 12 (substrate mounting table) is disposed in a lower portion of the processing chamber u, and an upper portion of the processing chamber (four) A disk-shaped shower head 13 is disposed opposite to the crystal seat. - Sun seat 1 = built-in static cooling device (not shown), heater unit (heating unit), refrigerant flow path 1S, and refrigerant chamber 16 communicating with the refrigerant flow path 15, and The mounting surface 17 on which the wafer w is placed is formed on the top, and the mounting surface 17, the heater unit 14, and the refrigerant chamber 16 are arranged in the order described above. The electric attraction is composed of Coulomb force or the like to form the wafer W thermostat unit 14 which is composed of resistors corresponding to substantially all areas of the crystal holder 12, and is heated to receive heat. The crystal seat 12 is used to heat the wafer w<sA times, and the heat is absorbed by the crystal holder 12 and via the
:熱量並傳，座12外部，以冷卻晶/二W =為下部電極之功能，可將高頻電功率=二 =喷琳頭13之間的處理空 = 雖具有作為上«極之舰，但村 10 201131642 在接地電位，亦或連接於其他高頻電源。 喷淋頭13係於内部具有緩衝室20、以及連通該緩 衝室20及處理空間S的複數個氣體孔21。從外部處理 氣體供給裝置（圖中未顯示）將處理氣體供給至緩衝室 20,前述所供給之處理氣體便會經由複數個氣體孔21 而被導入至處理空間S。基板處理裝置10由於將高頻 電功率施加至該處理空間S，故可激發被導入至處理空 間S的處理氣體以產生電漿。然後，使用前述產生之電 漿所包含的陽離子或自由基來對晶圓W施予電漿蝕刻 處理。 電漿蝕刻處理中，由於晶圓W會持續受到來自電 漿的熱量，故會有晶座12的溫度上昇之虞。於是，基 板處理裝置10具備有冷媒循環系統，以防止晶座12的 溫度上昇。 冷媒循環系統具備有：冷媒室16、冷媒流道15、 配置於處理室11外而連接於冷媒流道15之冷媒配管 22、及設置於該冷媒配管22中途之冷媒供應裝置23。 於該冷媒循環系統中，冷媒室16係位於該冷媒循環系 統的最上方。 冷媒供應裝置23具有作為壓送泵之功能，係經由 冷媒配管22及冷媒流道15來將冷媒沿著圖中箭頭方向 往冷媒室16壓送。又，冷媒供應裝置23具有作為熱交 換器之功能，係將吸收晶座12的熱量而變得高溫之冷 媒予以冷卻，來使該冷媒的溫度降低至較低溫，具體來 201131642 說為電漿飯刻處理中之晶座12的溫度維持或溫度下降 所品之μ度(例如10 C) °藉以將從冷媒供應裝置23被 供應至冷媒至16之冷媒的溫度維持在較低溫。此外， 本實施形態所使用之冷媒使用例如galdeZ(註冊商標) 或FLUORINERT(註冊商標）。 不 然而’於基板處理裝置10中’對晶圓W施予電製 蝕刻處理時，係使用來自加熱器單元14的熱量來使晶 座12的溫度上昇至該電漿钮刻處理的適合溫度。此 時，來自加熱器單元14之熱量的一部分會因流通於冷 媒流道15或冷媒室16之冷媒而被傳遞至晶座12外 部，而有阻礙晶座12的溫度上昇之虞。本實施形態中， 為了對應於此，便在加熱器單元14發熱來使晶座12的 溫度上昇時，停止冷媒流道15或冷媒室16之冷媒的流 動。 圖2為顯示本實施形態之基板載置台的溫度控制 方法之步驟圖。 圖2中，首先，在加熱器單元14發熱前，冷媒供 應襄t23會將冷媒往冷媒室16壓送，因此冷媒會在； 媒循％系統中如圖中箭頭所示般地循環（圖2(Α))。 _接著，在加熱器單元14發熱時，冷媒供應裝置23 會停止冷媒的壓送(圖2⑻)。藉此’在冷媒循環系統中， 冷媒的流較會停止。特別是，冷媒室16巾當冷媒的 流動停止時’冷媒室16的冷媒雖會吸收來自加熱 元14之熱量的-部分，但並不會將所吸收之熱傳遞至 12 201131642 晶座12外部。又，& Μ上方，故來自加熬==二於冷媒室 造成_ 會 媒室16中亦不合吝4人 稭此，由於冷 僅會吸收少物料㈣16的冷媒 來自加熱器單元二=14的熱里°結果便可將 度上昇。 4的熱1有效率地使用於晶座的溫 *日日座12的溫度上昇至電 合溫度時，冷媒#师w 水㈣漢理的適 因此冷會冷媒的壓送， 循環系統中如圖中箭頭所示般地 將^卢措此，便可將晶座12的溫度維持在電 水姓刻處理的適合溫度。 依本實施形態之基板載置台的溫度控制方法，由於 器單元14發熱時停止冷媒的流動，因此來自 加,一單元14之熱夏的—部分不會因冷媒而被傳遞至 晶座12外部。藉此，可將來自加熱器單元14的埶量有 效率地使用於晶座12的溫度上昇，從而可迅速地使晶 圓W溫度上昇，並減少熱能損失。 >又，由於只要利用冷媒供應裝置23來使冷媒的壓 达停止，便旎夠停止冷媒的流動，故不需為了實現本實 施形態之基板載置台的溫度控制方法，而於基板處理裴 置10之冷媒循環系統中配置特殊裝置等，從而可防止 成本大幅上昇。 又，於圖2的溫度控制方法中，在加熱器單元14 13 201131642 發熱且冷媒独系統中冷媒的流動停止時，亦可直 經由冷媒流道15或冷魏f 22，來錄 = 晶座^溫度時所需之冷媒溫度_)要高t 媒介體(例如8〇C的高溫媒介體)流入冷媒室16。藉此， 不僅是來自加熱器單元14的熱量，而亦可藉 介體的熱#來加熱晶座12，並可減少被媒介體奪^之 來自加熱器料14的熱量，而將來自加熱器單元 熱量更有效率地使用於晶座12的溫度上昇，從而 迅速地使晶圓W溫度上昇。 上述本實施形態之基板載置台的溫度控制方法 中，雖係在冷媒循環系統中，停止冷媒的流動，但亦可 使冷媒的流動較一般狀態要更慢❶藉此，可減少冷媒傳 遞至晶座12外部之熱量的量，從而較—般狀態要更迅 速地使晶圓W溫度上昇。 上述基板處理裝置1〇中，晶座12雖具有冷媒室 16’但即使是在晶座12不具有冷媒室16而僅具備冷媒 流道15的情況，亦可在加熱器單元14發熱時，藉由停 止冷媒流道15中之冷媒的流動來達成同樣效果。 接下來，針對本發明第2實施形態之基板載置台的 溫度控制方法及溫度控制系統加以說明。 圖3為概略顯示應用本實施形態之基板載置台的 溫度控制方法之基板處理裴置的結構之剖面圖。 由於本實施形態之結構、作用與上述第丨實施形態 基本上相同，針對重複的結構、作用則省略說明，以下 201131642 僅針對相異結構、作用加以說明。 θ 上中，基板處理裝置24係於冷媒配管22的中i令 口塾槽25(氣體層形成裝置Η口塵槽μ係 、 氣體(例如惰性氣體)，並在特定的時: 體流入:媒室:622,:媒流道15來使所儲存之嶋 A據㈣I 處必需將惰性氣體言史定為當流入 令二-& 時不會凝縮之程度的壓力、溫 設，為〇柳a以上，溫度係設定為酿以上j係 =⑶==置，中未顯示)，所 方法本實振形態之基板載置台的溫度控制 ^ 中首先’在加熱器單元14發敎前，出认、人 ΪίίΪί?3會將冷媒往冷媒室16壓送，因此冷媒； ▽接2:統中ί圖中箭頭所示般地循環(圖々(A)): 合Ρ卜 加熱器單元14發熱時，冷媒供應裝置23 會分止冷媒的壓送。藉直 流動便會停止。此時，力媒㈣統中，冷媒的 Α媒、士、曾Η办f 槽25係經由冷媒配管U及 、*入、{所儲存之較高溫、高壓的惰性氣體26 流入冷媒室丨6(圖4⑻）。流 26由於冷媒的流動已停止’且；^ 16後編生乳體 If ^ V 冷媒室16係位在冷媒循 承糸摘取上方，故會滯留在冷媒室Μ内的上部。 接者古會因滯留之惰性氣體％而在冷媒室Μ内的 陽成有讀層27(氣體層)(圖4(C))。當氣體層27 201131642 遍佈形成在冷媒室16内的上部整面，而使得冷媒室16 的上部内壁面與冷媒室16之冷媒的液面分開時，加壓 槽25便會停止流入惰性氣體26。此時，由於氣體層27 係存在於加熱器單元14與冷媒室16的冷媒之間，因此 會將加熱器單元14自冷媒室16的冷媒加以熱隔離。藉 此，來自加熱器單元14的熱量便不會被冷媒室16的冷 媒吸收。結果便可將來自加熱器單元14的熱量有效率 地使用於晶座12的溫度上昇。 接著，當晶座12的溫度上昇至電漿蝕刻處理的適 合溫度時，冷媒供應裝置23會再度開始冷媒的壓送， 因此冷媒便會在冷媒循環系統中如圖中箭頭所示般地 循環（圖4(D))。此時，冷媒室16的惰性氣體26會因循 環之冷媒而被傳遞至冷媒室16外部，而造成氣體層27 消失。藉此，便會因循環之冷媒而開始晶座12的溫度 調整，來將晶座12的溫度維持於電漿蝕刻處理的適合 溫度。 依本實施形態之基板載置台的溫度控制方法，在加 熱器單元14發熱且冷媒循環系統中冷媒的流動停止 時，會在冷媒室16内的上部形成有氣體層27。由於該 氣體層27係存在於加熱器單元14與冷媒室16的冷媒 之間，而將加熱器單元14自冷媒室16的冷媒加以熱隔 離，故可將來自加熱器單元14的熱量更有效率地使用 於晶座12的溫度上昇。 上述本實施形態之基板載置台的溫度控制方法，由 16 201131642 於係藉由較高壓、高溫的惰性氣體26來形成氣體層 27,故不壯來曰自加熱器單幻4的熱量，❿亦可“ 氣體層27的熱里來加熱晶座12,並可減少被氣體層27 奪走之來自加熱器單元U的熱量，而將來自加熱^單 元14的熱量更有效率地使用於晶座12的溫度上昇，從 而可更迅速地使晶圓W溫度上昇。 當產生氣體層27時’為了將該氣體層27的溫度維 持在較高溫，較佳地，係關閉冷媒配管22中途所設置 之闊門28(參照圖3)來將冷媒室16、冷媒流道15自外 部隔離後’再加壓冷媒室16等。此時，由於氣體層27 會被絕熱壓縮而使得溫度上昇，因此可易於將該氣體層 27的溫度維持在較高溫。 上述基板載置台的温度控制方法中，雖然加壓槽 25係儲存惰性氣體，並使惰性氣體流入冷媒室16而胃形 成有氣體層27 ’但加壓槽25亦可儲存較高壓、高溫(例 ，〇.2赂以上，且例如12叱以上）的冷媒蒸氣，而使 。亥冷媒崧氣流入冷媒室16來形成氣體層。藉此，便 可藉由較高壓、高溫的冷媒蒸氣來形成氣㈣27。然 後，被晶座12奪走熱量而使得溫度降低之冷媒的蒸氣 會凝縮而成為冷媒，並與先前即存在於冷媒室16或冷 媒流道15之冷媒混合。因此，晶圓w的溫度上昇後\ 由於不需时冷媒的蒸氣，可省卻作業者_手續，且 冷媒的濃度等+會變化，故可防止冷媒所造成的冷卻性 能變化。 17 201131642 又，當形成有氣體層27時，亦可不使惰性氣體26 或冷媒的蒸氣流入冷媒室16，而以加熱器單元14或其 他加熱器（圖中未顯示）來使冷媒室16的冷媒加熱沸騰 而產生冷媒的蒸氣，並藉由冷媒室16所產生之冷媒的 蒸氣來形成氣體層27。此情況下，便可不需在冷媒循 環系統中設置使惰性氣體26等流入冷媒室16之裝置 (加壓槽25)，並可簡化裝置結構。又，由於被晶座12 奪走熱量而使得溫度降低之冷媒的蒸氣會凝縮而回到 原先的冷媒，故可達到與使得冷媒蒸氣流入冷媒室16 的情況相同的效果。 接下來，針對本發明第3實施形態之基板載置台的 溫度控制方法及溫度控制系統加以說明。 圖5為概略顯示應用本實施形態之基板載置台的 溫度控制方法之基板處理裝置的結構之剖面圖。 由於本實施形態之結構、作用與上述第i實施形態 基本上相同，針對重複的結構、作用則省略說明，以下 僅針對相異結構、作用加以說明。 圖5中，基板處理裝置29係於冷媒循環系統中之 3冷上游側的冷媒配管22中途具有絕熱粒子槽 密产要置^絕熱粒子槽3G儲存有多數較冷媒 粒Ϊ ㈣材料(例如财熱樹脂所構成之球狀絕熱 管22及αΓΪ狀物I並在特定的時間點經由冷媒配 人冷媒來使所儲存之多數絕熱粒子31流 至16。此處絕熱粒子31係設定為較高溫(例如 201131642 90°C以上）。又，絕熱粒子槽30具有加熱器（加熱裝置， 圖中未顯示），以將所儲存之絕熱粒子31維持在較高溫。 又，基板處理裝置29係在冷媒循環系統中之冷媒 室16下游側的冷媒配管22中途具有絕熱粒子回收器 32。絕熱粒子回收器32係於内部具有特定容積的空間 33，與配置於該空間33之回收網34。回收網34係藉 由在空間33中過濾包含從冷媒室16流出的多數絕熱粒 子31之冷媒，來將冷媒與絕熱粒子31予以分離。連同 回收網3 4來將分離後的多數絕熱粒子31從絕熱粒子回 收器32取出，並再度儲存至絕熱粒子槽30。 圖6為顯示本實施形態之基板載置台的溫度控制 方法之步驟圖。 圖6中，首先，在加熱器單元14發熱前，由於冷 媒供應裝置23會將冷媒往冷媒室16壓送，因此冷媒會 在冷媒循環系統中如圖中箭頭所示般地循環（圖6(A))。 接著，在加熱器單元14發熱時，冷媒供應裝置23 會停止冷媒的壓送。藉此，在冷媒循環系統中，冷媒的 流動便會停止。此時，絕熱粒子槽30係經由冷媒配管 22及冷媒流道15來使所儲存之較高溫的絕熱粒子31 流入冷媒室16(圖6(B))。流入冷媒室16後的絕熱粒子 31由於冷媒的流動已停止，且其密度係較冷媒要更小， 故會滞留在冷媒室16内的上部。 接著，當因滯留之絕熱粒子31而在冷媒室16内的 上部形成有絕熱粒子層35(絕熱層）(圖6(C))時，絕熱粒 19 201131642 子乜會停止流入絕熱粒子31。此時，由於絕熱粒子 層35係存在於加熱器單元14與冷媒室16的冷媒之 間因此便會將加熱器單元14自冷媒室的冷媒加以 熱，離。藉此，來自加熱器單元14的熱量便不會被冷 媒室16的冷媒吸收》結果便可將來自加熱 * 熱量有效率地使用於晶座12的溫度上昇。° 接著，當晶座12的溫度上昇至電_刻處理的適 合溫度時，冷媒供應裝置23會再度開始冷媒的壓送， 因此冷媒便會在冷媒循環系統中如圖中箭頭所示般地 循裱（圖6(D))。藉此，冷媒室16的絕熱粒子31會 環之冷媒而㈣遞至冷媒室16料，Μ成絕敎粒子 層35消失。藉此，便會因循環之冷媒而開始晶座η 溫度調整’來將晶座12的溫度維持於電祕刻處 適合溫度。此時，彳邑熱粒子回收器32係在空間幻 用回收網34來回收因冷媒而被傳遞至冷媒室16 = 多數絕熱粒子31。 。之 依本實施形態之基板載置台的溫度控制方法， 熱器單το 14發熱且冷媒循環系統中冷媒的流動停止加 時，會在冷媒室16内的上部形成有絕熱粒子層％。 於該絕熱粒子層35係存在於加熱器單元14與冷媒— 16的冷媒之間，而將加熱器單元14自冷媒室、、至 媒加以熱隔離，故可將來自加熱器單元14的熱量更令 效率地使用於晶座12的溫度上昇。 ”、、里有 上述本實施形態之基板載置台的溫度控制方法，由‘ 201131642 於係藉由較高溫的絕熱粒子31來形成絕熱粒子層35， 故不僅是來自加熱器單元14的熱量，而亦可藉由絕熱 粒子層35的熱量來加熱晶座12，並可減少被絕熱粒子 層35奪走之來自加熱器單元14的熱量，而將來自加熱 為單元14的熱量更有效率地使用於晶座12的溫度上 昇’從而可更迅速地使晶圓W溫度上昇。 此外’上述各實施形態中被施予電漿钱刻處理之基 板不限於半導體元件用晶圓，而亦可為包含LCD(Liquid Crystal Display)等之 FPD(Flat Panel Display)等所使用 的各種基板、光罩、CD基板或印刷基板等。 【圖式簡單說明】 圖1為概略顯示應用本發明第丨實施形態之基板載 置台的溫度控制方法之基板處理裝置的結構之剖面圖。 圖2(A)〜圖2(C)為顯示本實施形態之基板載置台的 溫度控制方法之步驟圖。 圖3為概略顯示應用本發明第2實施形態之基板載 置台的溫度控制方法之基板處理裝置的結構之剖面圖。 圖4(A)〜圖4(D)為顯示本實施形態之基板載置台的 溫度控制方法之步驟圖。 圖5為概略顯示應用本發明第3實施形態之基板載 置台的溫度控制方法之基板處理裝置的結構之剖面圖。 圖6(A)〜® 6(D)為顯林實施形態之基板載置台的 溫度控制方法之步驟圖。 201131642 【主要元件符號說明】 s 處理空間 w 晶圓 10、24、29 基板處理裝置 11 處理室 12 晶座 13 喷淋頭 14 加熱器單元 15 冷媒流道 16 冷媒室 17 載置面 18 電源 19 南頻電源 20 緩衝室 21 氣體孔 22 冷媒配管 23 冷媒供應裝置 25 加壓槽 26 惰性氣體 27 惰性氣體層 28 閥門 30 絕熱粒子槽 31 絕熱粒子 22 201131642 32 33 34 絕熱粒子回收器 空間 回收網 23: Heat and pass, seat 12 outside, to cool the crystal / two W = for the function of the lower electrode, can be high frequency electric power = two = spray between the head 13 processing empty = although with the ship as the upper pole, but Village 10 201131642 is at ground potential or connected to other high frequency power supplies. The shower head 13 has a buffer chamber 20 therein and a plurality of gas holes 21 that communicate with the buffer chamber 20 and the processing space S. The processing gas is supplied from the external processing gas supply means (not shown) to the buffer chamber 20, and the supplied processing gas is introduced into the processing space S via the plurality of gas holes 21. Since the substrate processing apparatus 10 applies high frequency electric power to the processing space S, the processing gas introduced into the processing space S can be excited to generate plasma. Then, the wafer W is subjected to a plasma etching treatment using the cation or radical contained in the plasma generated as described above. In the plasma etching process, since the wafer W continues to receive heat from the plasma, the temperature of the crystal holder 12 rises. Thus, the substrate processing apparatus 10 is provided with a refrigerant circulation system to prevent the temperature of the crystal holder 12 from rising. The refrigerant circulation system includes a refrigerant chamber 16, a refrigerant flow passage 15, a refrigerant pipe 22 disposed outside the processing chamber 11 and connected to the refrigerant flow passage 15, and a refrigerant supply device 23 installed in the middle of the refrigerant pipe 22. In the refrigerant circulation system, the refrigerant chamber 16 is located at the uppermost portion of the refrigerant circulation system. The refrigerant supply device 23 has a function as a pressure feed pump, and the refrigerant is pressure-fed to the refrigerant chamber 16 in the direction of the arrow in the figure via the refrigerant pipe 22 and the refrigerant flow path 15. Further, the refrigerant supply device 23 has a function as a heat exchanger, and cools the refrigerant that has absorbed the heat of the crystal holder 12 to a high temperature, thereby lowering the temperature of the refrigerant to a lower temperature. Specifically, 201131642 is called a plasma rice. The temperature of the crystal holder 12 in the engraving process is maintained or lowered by a temperature of (for example, 10 C) to maintain the temperature of the refrigerant supplied from the refrigerant supply device 23 to the refrigerant to 16 at a lower temperature. Further, the refrigerant used in the embodiment is, for example, galdeZ (registered trademark) or FLUORINERT (registered trademark). When the wafer W is subjected to an electrical etching treatment in the substrate processing apparatus 10, heat from the heater unit 14 is used to raise the temperature of the wafer 12 to a suitable temperature for the plasma button processing. At this time, a part of the heat from the heater unit 14 is transmitted to the outside of the crystal holder 12 by the refrigerant flowing through the refrigerant flow path 15 or the refrigerant chamber 16, and the temperature of the crystal holder 12 is prevented from rising. In the present embodiment, in response to this, when the heater unit 14 generates heat to raise the temperature of the crystal holder 12, the flow of the refrigerant in the refrigerant flow path 15 or the refrigerant chamber 16 is stopped. Fig. 2 is a flow chart showing a method of controlling the temperature of the substrate stage of the embodiment. In Fig. 2, first, before the heater unit 14 generates heat, the refrigerant supply 襄t23 will pressurize the refrigerant to the refrigerant chamber 16, so that the refrigerant will circulate in the medium circulation system as shown by the arrow in the figure (Fig. 2). (Α)). Then, when the heater unit 14 generates heat, the refrigerant supply device 23 stops the pressure feed of the refrigerant (Fig. 2 (8)). Thereby, in the refrigerant circulation system, the flow of the refrigerant is stopped. In particular, when the flow of the refrigerant is stopped in the refrigerant chamber 16, the refrigerant in the refrigerant chamber 16 absorbs the portion of the heat from the heating element 14, but does not transfer the absorbed heat to the outside of the 12 201131642 crystal holder 12. Also, & Μ above, so from the twisting == two in the refrigerant room _ will not be in the media room 16 吝 4 people straw, because the cold will only absorb less material (four) 16 of the refrigerant from the heater unit two = 14 The result of the heat can increase the degree. 4 heat 1 is effectively used in the temperature of the crystal seat * When the temperature of the sun seat 12 rises to the electric junction temperature, the refrigerant #师w water (4) Han Li's suitable cold so that the refrigerant will be pressurized, the circulation system is as shown in the figure As shown by the middle arrow, the temperature of the crystal holder 12 can be maintained at a suitable temperature for the electrothermal water treatment. According to the temperature control method of the substrate stage of the present embodiment, since the flow of the refrigerant is stopped when the unit 14 generates heat, the portion of the hot summer of the unit 14 is not transmitted to the outside of the crystal holder 12 by the refrigerant. Thereby, the amount of electricity from the heater unit 14 can be efficiently used to increase the temperature of the crystal holder 12, so that the temperature of the wafer W can be rapidly increased and the heat energy loss can be reduced. > Further, since the flow of the refrigerant is stopped by the refrigerant supply device 23, the flow of the refrigerant is stopped. Therefore, it is not necessary to implement the temperature control method of the substrate stage of the present embodiment. A special device or the like is disposed in the refrigerant circulation system of 10, thereby preventing a substantial increase in cost. Further, in the temperature control method of FIG. 2, when the heater unit 14 13 201131642 generates heat and the flow of the refrigerant in the refrigerant single system is stopped, the refrigerant flow path 15 or the cold Wei f 22 may be directly recorded. The temperature of the refrigerant required at the temperature _) is high. The medium (for example, a high-temperature medium of 8 〇C) flows into the refrigerant chamber 16. Thereby, not only the heat from the heater unit 14 but also the heat of the mediator can be used to heat the crystal seat 12, and the heat from the heater material 14 can be reduced by the medium, but will be from the heater. The unit heat is more efficiently used for the temperature rise of the crystal holder 12, thereby rapidly increasing the temperature of the wafer W. In the temperature control method of the substrate stage of the present embodiment, the flow of the refrigerant is stopped in the refrigerant circulation system, but the flow of the refrigerant may be made slower than in the normal state, thereby reducing the transfer of the refrigerant to the crystal. The amount of heat external to the seat 12 causes the temperature of the wafer W to rise more rapidly than in the normal state. In the substrate processing apparatus 1A, the crystal holder 12 has the refrigerant chamber 16'. However, even if the crystal holder 12 does not have the refrigerant chamber 16, and only the refrigerant flow path 15 is provided, the heater unit 14 can be used when the heater unit 14 generates heat. The same effect is achieved by stopping the flow of the refrigerant in the refrigerant flow path 15. Next, a temperature control method and a temperature control system of the substrate stage according to the second embodiment of the present invention will be described. Fig. 3 is a cross-sectional view showing the structure of a substrate processing apparatus to which the temperature control method of the substrate stage of the embodiment is applied. The configuration and operation of the present embodiment are basically the same as those of the above-described third embodiment, and the description of the overlapping configuration and operation will be omitted. Hereinafter, the description will be made only for the different configurations and operations. In the above θ, the substrate processing apparatus 24 is in the middle of the refrigerant pipe 22 (the gas layer forming device, the dust groove μ system, the gas (for example, inert gas), and at a specific time: body inflow: medium Room: 622,: The media channel 15 is used to make the stored 嶋A (4) I must be defined as the pressure and temperature of the inert gas when it flows into the second-& In the above, the temperature is set to be the above j system = (3) == set, and is not shown in the middle. The temperature control of the substrate stage in the actual vibration mode is first described in the first step before the heater unit 14 is turned on. Person ΪίίΪί?3 will pressurize the refrigerant to the refrigerant chamber 16, so the refrigerant will be circulated as shown by the arrow in the figure: (Fig. 々(A)): When the heater unit 14 is hot, The refrigerant supply device 23 separates the pressure feed of the refrigerant. It will stop when you flow straight. At this time, in the medium (four) system, the refrigerant medium, the taxi, and the Z-slot 25 are flowed into the refrigerant chamber 经由6 through the refrigerant piping U and, *, and {the stored higher temperature and high pressure inert gas 26 ( Figure 4 (8)). The flow 26 has stopped because the flow of the refrigerant has stopped. And after the 16th, the refrigerant chamber 16 is located above the refrigerant recovery enthalpy, so that it stays in the upper portion of the refrigerant chamber. The receiver will have a reading layer 27 (gas layer) in the refrigerant chamber 因 due to the retained inert gas % (Fig. 4(C)). When the gas layer 27 201131642 is spread over the entire upper surface of the refrigerant chamber 16, so that the upper inner wall surface of the refrigerant chamber 16 is separated from the liquid level of the refrigerant of the refrigerant chamber 16, the pressurizing tank 25 stops flowing into the inert gas 26. At this time, since the gas layer 27 exists between the heater unit 14 and the refrigerant of the refrigerant chamber 16, the heater unit 14 is thermally isolated from the refrigerant of the refrigerant chamber 16. Thereby, the heat from the heater unit 14 is not absorbed by the refrigerant of the refrigerant chamber 16. As a result, the heat from the heater unit 14 can be efficiently used for the temperature rise of the crystal holder 12. Then, when the temperature of the crystal holder 12 rises to a suitable temperature for the plasma etching treatment, the refrigerant supply device 23 starts the pressure feed of the refrigerant again, so that the refrigerant circulates in the refrigerant circulation system as indicated by the arrow in the figure ( Figure 4 (D)). At this time, the inert gas 26 of the refrigerant chamber 16 is transferred to the outside of the refrigerant chamber 16 by the circulating refrigerant, causing the gas layer 27 to disappear. Thereby, the temperature adjustment of the crystal holder 12 is started by the circulating refrigerant to maintain the temperature of the crystal holder 12 at a suitable temperature for the plasma etching treatment. According to the temperature control method of the substrate stage of the embodiment, when the heater unit 14 generates heat and the flow of the refrigerant in the refrigerant circulation system is stopped, the gas layer 27 is formed in the upper portion of the refrigerant chamber 16. Since the gas layer 27 is present between the heater unit 14 and the refrigerant of the refrigerant chamber 16, the heater unit 14 is thermally isolated from the refrigerant of the refrigerant chamber 16, so that the heat from the heater unit 14 can be more efficiently The temperature used for the crystal holder 12 rises. In the temperature control method of the substrate mounting table according to the present embodiment, the gas layer 27 is formed by the relatively high-pressure, high-temperature inert gas 26 from 16 201131642, so that the heat of the heater alone is not strong. The heat of the gas layer 27 can be used to heat the crystal holder 12, and the heat from the heater unit U taken away by the gas layer 27 can be reduced, and the heat from the heating unit 14 can be more efficiently used in the crystal holder 12. The temperature rises, so that the temperature of the wafer W can be increased more rapidly. When the gas layer 27 is generated, 'in order to maintain the temperature of the gas layer 27 at a relatively high temperature, it is preferable to close the width of the refrigerant pipe 22 in the middle. The door 28 (see FIG. 3) is configured to re-pressurize the refrigerant chamber 16 and the like after the refrigerant chamber 16 and the refrigerant flow passage 15 are isolated from the outside. At this time, since the gas layer 27 is adiabatically compressed and the temperature rises, it is easy to The temperature of the gas layer 27 is maintained at a relatively high temperature. In the temperature control method of the substrate stage, the pressure tank 25 stores an inert gas, and the inert gas flows into the refrigerant chamber 16 to form a gas layer 27' in the stomach. Slot 25 can also be stored The refrigerant vapor at a higher pressure and a higher temperature (for example, 2 or more, and for example, 12 Å or more) is passed through the refrigerant chamber 16 to form a gas layer, thereby allowing a higher pressure and a higher temperature. The refrigerant vapor forms gas (4) 27. Then, the vapor of the refrigerant which is deprived of heat by the crystal holder 12 is condensed to become a refrigerant, and is mixed with the refrigerant which was previously present in the refrigerant chamber 16 or the refrigerant passage 15. After the temperature of the wafer w rises, since the steam of the refrigerant is not required, the operator's procedure can be eliminated, and the concentration of the refrigerant or the like changes, so that the cooling performance change caused by the refrigerant can be prevented. 17 201131642 When the gas layer 27 is present, the refrigerant of the refrigerant chamber 16 or other heaters (not shown) may be used to heat the refrigerant in the refrigerant chamber 16 to generate the refrigerant without flowing the inert gas 26 or the refrigerant vapor into the refrigerant chamber 16. The vapor is formed by the vapor of the refrigerant generated in the refrigerant chamber 16. In this case, it is not necessary to provide a means for flowing the inert gas 26 or the like into the refrigerant chamber 16 in the refrigerant circulation system ( The groove 25) can simplify the structure of the device. Further, since the vapor of the refrigerant whose temperature is lowered by the crystal holder 12 is condensed and returned to the original refrigerant, the refrigerant vapor can be caused to flow into the refrigerant chamber 16. In the following, the temperature control method and the temperature control system of the substrate stage according to the third embodiment of the present invention will be described. Fig. 5 is a view schematically showing the substrate processing to which the temperature control method of the substrate stage of the embodiment is applied. The configuration and operation of the present embodiment are basically the same as those of the above-described first embodiment, and the description of the overlapping configuration and operation will be omitted. Hereinafter, only the different configuration and operation will be described. The substrate processing apparatus 29 is provided with a heat-insulating particle tank in the middle of the refrigerant piping 22 on the cold side of the refrigerant circulation system. The heat-insulating particle tank 3G stores a large amount of refrigerant particles (4) (for example, a heat-resistant resin). The spherical heat insulating tube 22 and the α-shaped material I are supplied with a refrigerant through a refrigerant at a specific time point to make the stored majority of the insulating particles 31 to 16 streams. Here, the heat insulating particles 31 are set to a relatively high temperature (for example, 201131642 and 90 ° C or higher). Further, the adiabatic particle tank 30 has a heater (heating means, not shown) to maintain the stored heat insulating particles 31 at a relatively high temperature. Further, the substrate processing apparatus 29 has a heat insulating particle collector 32 in the middle of the refrigerant piping 22 on the downstream side of the refrigerant chamber 16 in the refrigerant circulation system. The adiabatic particle collector 32 is a space 33 having a specific volume inside, and a recovery net 34 disposed in the space 33. The recovery net 34 separates the refrigerant from the heat insulating particles 31 by filtering the refrigerant containing the plurality of heat insulating particles 31 flowing out of the refrigerant chamber 16 in the space 33. The separated majority of the adiabatic particles 31 are taken out from the adiabatic particle collector 32 together with the recovery net 34, and are again stored in the adiabatic particle tank 30. Fig. 6 is a flow chart showing a method of controlling the temperature of the substrate stage of the embodiment. In Fig. 6, first, before the heater unit 14 generates heat, since the refrigerant supply device 23 pressurizes the refrigerant to the refrigerant chamber 16, the refrigerant circulates in the refrigerant circulation system as indicated by the arrow in the figure (Fig. 6 (Fig. 6 A)). Next, when the heater unit 14 generates heat, the refrigerant supply device 23 stops the pressure feed of the refrigerant. Thereby, in the refrigerant circulation system, the flow of the refrigerant is stopped. At this time, the heat insulating particle tank 30 flows the stored higher temperature heat insulating particles 31 into the refrigerant chamber 16 via the refrigerant pipe 22 and the refrigerant flow path 15 (Fig. 6(B)). The heat insulating particles 31 which have flowed into the refrigerant chamber 16 have stopped due to the flow of the refrigerant, and their density is smaller than that of the refrigerant, so that they stay in the upper portion of the refrigerant chamber 16. Then, when the heat insulating particle layer 35 (heat insulating layer) is formed in the upper portion of the refrigerant chamber 16 due to the retained heat insulating particles 31 (Fig. 6(C)), the heat insulating particles 19 201131642 stop flowing into the heat insulating particles 31. At this time, since the adiabatic particle layer 35 exists between the heater unit 14 and the refrigerant in the refrigerant chamber 16, the heater unit 14 is heated from the refrigerant in the refrigerant chamber. Thereby, the heat from the heater unit 14 is not absorbed by the refrigerant of the refrigerant chamber 16. As a result, the temperature from the heating * heat can be efficiently used to raise the temperature of the crystal holder 12. Then, when the temperature of the crystal holder 12 rises to a suitable temperature for the electric etch process, the refrigerant supply device 23 starts the pressure feed of the refrigerant again, so that the refrigerant is circulated in the refrigerant circulation system as indicated by the arrow in the figure.裱 (Fig. 6(D)). Thereby, the heat insulating particles 31 of the refrigerant chamber 16 are circulated to the refrigerant, and (4) are transferred to the refrigerant chamber 16, and the annihilated particle layer 35 disappears. Thereby, the temperature adjustment of the crystal holder η is started by the circulating refrigerant to maintain the temperature of the crystal holder 12 at the electric secret temperature. At this time, the hot particle collector 32 is collected in the space magic recovery net 34 to be recovered by the refrigerant to be transferred to the refrigerant chamber 16 = most of the heat insulating particles 31. . According to the temperature control method of the substrate stage according to the embodiment, when the heat exchanger unit το 14 generates heat and the flow of the refrigerant in the refrigerant circulation system stops, the heat insulating particle layer % is formed in the upper portion of the refrigerant chamber 16. The heat insulating particle layer 35 is present between the heater unit 14 and the refrigerant of the refrigerant 16 to thermally isolate the heater unit 14 from the refrigerant chamber to the medium, so that the heat from the heater unit 14 can be further increased. The temperature used for the crystal holder 12 is increased efficiently. In the temperature control method of the substrate stage of the above-described embodiment, the heat insulating particle layer 35 is formed by the relatively high temperature heat insulating particles 31 from '201131642, so that not only the heat from the heater unit 14, but also the heat from the heater unit 14 The crystal holder 12 can also be heated by the heat of the insulating particle layer 35, and the heat from the heater unit 14 taken away by the insulating particle layer 35 can be reduced, and the heat from the heating unit 14 can be used more efficiently. The temperature rise of the crystal holder 12 can increase the temperature of the wafer W more quickly. Further, the substrate to which the plasma treatment is applied in the above embodiments is not limited to the wafer for semiconductor elements, and may include an LCD. Various substrates, masks, CD substrates, printed boards, etc. used in FPD (Flat Panel Display), etc. (Liquid Crystal Display), etc. [Brief Description] FIG. 1 is a schematic view showing a substrate to which the embodiment of the present invention is applied. Fig. 2(A) to Fig. 2(C) are process diagrams showing a method of controlling the temperature of the substrate stage of the embodiment. 3 is a cross-sectional view showing a configuration of a substrate processing apparatus to which the temperature control method of the substrate stage according to the second embodiment of the present invention is applied. FIG. 4(A) to FIG. 4(D) are diagrams showing the substrate stage of the embodiment. Fig. 5 is a cross-sectional view showing the structure of a substrate processing apparatus in which the temperature control method of the substrate stage according to the third embodiment of the present invention is applied. Fig. 6(A) to 6(D) are Step diagram of the temperature control method of the substrate mounting table of the embodiment. 201131642 [Description of main component symbols] s Processing space w Wafers 10, 24, 29 Substrate processing apparatus 11 Processing chamber 12 Crystal holder 13 Shower head 14 Heater unit 15 Refrigerant flow path 16 Refrigerant chamber 17 Mounting surface 18 Power supply 19 Southern frequency power supply 20 Buffer chamber 21 Gas hole 22 Refrigerant piping 23 Refrigerant supply unit 25 Pressurizing tank 26 Inert gas 27 Inert gas layer 28 Valve 30 Insulating particle tank 31 Insulating particles 22 201131642 32 33 34 Insulation particle recovery space recovery network 23