CN104952682A - Plasma treatment chamber and base station thereof - Google Patents

Plasma treatment chamber and base station thereof Download PDF

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Publication number
CN104952682A
CN104952682A CN201410113448.4A CN201410113448A CN104952682A CN 104952682 A CN104952682 A CN 104952682A CN 201410113448 A CN201410113448 A CN 201410113448A CN 104952682 A CN104952682 A CN 104952682A
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China
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base station
base
coolant passage
made
pedestal
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CN201410113448.4A
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Chinese (zh)
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吴狄
倪图强
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中微半导体设备(上海)有限公司
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Priority to CN201410113448.4A priority Critical patent/CN104952682A/en
Publication of CN104952682A publication Critical patent/CN104952682A/en

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Abstract

The invention provides a plasma treatment chamber and a base station thereof. The base station comprises a base station base body internally provided with a coolant passage; the upper-layer structure of the base station base body comprises a second insulation layer internally provided with a heater, and a first insulation layer directly arranged above the second insulation layer and internally provided with a static electrode, wherein a plurality of holes are formed in a material layer between the plane where the upper surface of the coolant passage of the base station base body and the lower surface of the second insulation layer. The plasma treatment chamber and the base station thereof provided by the invention are capable of greatly increasing the temperature difference between the coolant passage in the base body of the base station and the heater embedded in the second insulation layer, so as to meet the needs of manufacturing procedures.

Description

一种等离子体处理腔室及其基台 A plasma processing chamber and the base

技术领域 FIELD

[0001] 本发明涉及半导体制造领域,尤其涉及一种等离子体处理腔室及其基台。 [0001] The present invention relates to semiconductor manufacturing, and more particularly relates to a plasma processing chamber and their base stations.

背景技术 Background technique

[0002] 等离子处理腔室利用真空反应室的工作原理进行半导体基片和等离子平板的基片的加工。 [0002] The plasma processing chamber for processing a substrate and a semiconductor substrate by plasma flat working principle of the vacuum reaction chamber. 真空反应室的工作原理是在真空反应室中通入含有适当刻蚀剂源气体的反应气体,然后再对该真空反应室进行射频能量输入,以激活反应气体,来激发和维持等离子体, 以便分别刻蚀基片表面上的材料层或在基片表面上淀积材料层,进而对半导体基片和等离子平板进行加工。 Working principle of the vacuum chamber is introduced into a vacuum reaction chamber a reaction gas containing a suitable etchant source gas, and then the RF energy input to the vacuum chamber to activate the reaction gas, and maintaining a plasma is excited, so that respectively etchable material layer on the surface layer of the substrate or depositing material on a substrate surface, and thus the semiconductor substrate and the flat plasma processing.

[0003] 等离子体处理腔室中包括一腔体,腔体下方设置有一用于放置基片的基台,基台中设置有温度调节装置用于对系统以及基片的温度进行控制。 [0003] The plasma processing chamber comprises a chamber, the chamber is arranged below the substrate for placing a base station, the base station is provided with a temperature adjusting means for the substrate and the temperature of the system is controlled. 其中,所述温度调节装置包括设置于基台基体的冷却液供应系统以及设置于基体以上的加热器层。 Wherein said temperature adjusting means includes a cooling liquid supply system member and the substrate pedestal heater layer disposed above the base body. 在某些制程中,对温度调节装置的冷却液供应层和加热器层有明确的温差要求,有时达到50摄氏度及以上。 In certain processes, coolant supply temperature adjustment of the heater layer of the device layer and the clear temperature difference between the requirements, and may reach 50 degrees Celsius or more.

[0004] 因此,如何将基台中的冷却液供应层以及加热器层的温度差维持在制程所需范围,又能不浪费资源和能量,是业内急待解决的问题。 [0004] Thus, the temperature difference between the base station how coolant supply layer and a heater layer is maintained at the desired range of the process, but not to waste energy and resources, pressing problem is the industry.

发明内容 SUMMARY

[0005] 针对背景技术中的上述问题,本发明提出了一种等离子体处理腔室及其基台。 [0005] In view of the above problems of the background art, the present invention provides a plasma processing chamber and their base stations.

[0006] 本发明第一方面提供了一种用于等离子体处理腔室的基台,其中,所述基台包括: [0006] The first aspect of the present invention provides a base station for a plasma processing chamber, wherein, said base station comprising:

[0007] 基台基体,其中设置有冷却液通道; [0007] The pedestal base member, wherein a coolant passage;

[0008] 基台基体的上层结构包括:第二绝缘层,其中设置有加热器;以及直接设置于该第二绝缘层之上的第一绝缘层,其中设置有静电电极; Superstructure [0008] The base station base body comprising: a second insulating layer, wherein a heater; and a first insulating layer disposed directly on the second insulating layer, wherein the electrostatic electrode is provided;

[0009] 其中,在所述基台基体的所述冷却液通道上表面所在平面与所述第二绝缘层下表面之间的材料层中设置有若干空洞。 [0009] wherein, on the surface where the coolant passage of the base station base body material layer between the plane of the lower surface of the second insulating layer is provided with a plurality of voids.

[0010] 进一步地,所述基台基体和所述第二绝缘层之间还包括一温度隔离层,在该温度隔离层中设置有若干空洞。 [0010] Further, the pedestal base between the body and the second layer further comprises a temperature insulating spacer layer disposed on the spacer layer has a temperature of several voids.

[0011] 进一步地,所述基台基体中位于所述冷却液通道之上的区域设置有若干空洞。 [0011] Further, the base of the pedestal body is positioned above the coolant channel is provided with a plurality of hollow regions.

[0012] 进一步地,所述基台基体是由金属钛制成的。 [0012] Further, the pedestal base is a metal body made of titanium.

[0013] 进一步地,所述基台基体中的至少冷却液通道上表面以下的区域是由金属钛制成的。 [0013] Further, at least a region below the surface of the substrate on the coolant passage pedestal body is made of metal titanium.

[0014] 进一步地,所述温度隔离层的主体是由金属钛制成的。 [0014] Further, the temperature of the body of the spacer layer is made of titanium metal.

[0015] 进一步地,所述温度隔离层中至少其不包括若干空洞的区域是由金属钛制成的。 [0015] Further, the temperature of the spacer layer that does not include at least a plurality of hollow regions are made of titanium metal.

[0016] 进一步地,所述空洞的体积范围占所述冷却液通道上表面与所述第二绝缘层下表面之间的材料层总体积的30%到90%。 [0016] Further, the voids volume range comprises from 30% to 90% of the total volume of the material layer between the surface of the lower surface of the insulating layer on the second coolant passage.

[0017] 进一步地,所述冷却液通道还通过若干管道外接有一冷却液循环装置,所述冷却液循环装置用于循环提供冷却液。 [0017] Further, the coolant passage through an external conduit having a plurality of cooling fluid circulating means, the circulating means for circulating the cooling fluid to provide cooling fluid.

[0018] 进一步地,所述加热器还外接有一电源装置。 [0018] Further, the heater has a further external power supply device.

[0019] 进一步地,所述直流电极还外界有一直流电源。 [0019] Further, the external DC electrode further has a DC power.

[0020] 本发明第二方面提供了一种等离子体处理腔室,其中,所述等离子体进一步地,所述基台基体是由金属钛制成的。 [0020] The second aspect of the present invention provides a plasma processing chamber, wherein the plasma further, the base station base consists of metal titanium.

[0021] 进一步地,所述基台基体中的至少冷却液通道上表面以下的区域是由金属钛制成的。 [0021] Further, at least a region below the surface of the substrate on the coolant passage pedestal body is made of metal titanium.

[0022] 进一步地,所述温度隔离层的主体是由金属钛制成的。 [0022] Further, the temperature of the body of the spacer layer is made of titanium metal.

[0023] 进一步地,所述温度隔离层中至少其不包括若干空洞的区域是由金属钛制成的。 [0023] Further, the temperature of the spacer layer that does not include at least a plurality of hollow regions are made of titanium metal.

[0024] 本发明提供的一种等离子体处理腔室及其基台能够极大地增加基台中的基体中冷却液通道和第二绝缘层中内嵌的加热器之间的温度差,以满足制程所需。 [0024] A plasma processing chamber and the base station of the present invention provides can greatly increase the temperature between the base station of the base body coolant passage and the second insulating layer embedded in the difference between the heater, in order to meet process required.

附图说明 BRIEF DESCRIPTION

[0025] 图1是等离子体处理腔室的结构示意图; [0025] FIG. 1 is a schematic view of a plasma processing chamber;

[0026] 图2是根据本发明一个具体实施例的等离子体处理腔室的基台的结构示意图; [0026] FIG. 2 is a schematic diagram of the structure of the base station plasma processing chamber of a particular embodiment of the present invention;

[0027] 图3是根据本发明一个具体实施例的等离子体处理腔室的基台的结构示意图。 [0027] FIG. 3 is a schematic view of the base of the plasma processing chamber according to the present invention a particular embodiment.

具体实施方式 Detailed ways

[0028] 以下结合附图,对本发明的具体实施方式进行说明。 [0028] conjunction with the drawings, specific embodiments of the present invention will be described.

[0029] 要指出的是,"半导体工艺件"、"晶圆"和"基片"这些词在随后的说明中将被经常互换使用,在本发明中,它们都指在处理反应室内被加工的工艺件,工艺件不限于晶圆、衬底、基片、大面积平板基板等。 [0029] It is noted that, "semiconductor process device", "wafer" and "substrate" these words are often used interchangeably in the following description, in the present invention, they all refer to the reaction chamber is in the process processing technology member member is not limited to the wafer process, the substrate, the substrate, a large area flat panel substrates. 为了方便说明,本文在实施方式说明和图示中将主要以"基片"为例来作示例性说明。 For convenience of explanation, in the description herein and in the illustrated embodiment primarily "substrate" as an example to be illustrative.

[0030] 图1示出了等离子体处理腔室的结构示意图。 [0030] FIG. 1 shows a schematic configuration of a plasma processing chamber. 等离子体处理腔室100具有一个处理腔体(未示出),处理腔体基本上为柱形,且处理腔体侧壁102基本上垂直,处理腔体内具有相互平行设置的上电极和下电极。 Plasma processing chamber 100 having a process chamber (not shown), the processing chamber is substantially cylindrical, and the processing chamber 102 is substantially perpendicular to the side wall, the processing chamber having upper and lower electrodes disposed parallel to each other . 通常,在上电极与下电极之间的区域为处理区域P,该区域P将形成高频能量以点燃和维持等离子体。 Typically, in the region between the upper and lower electrodes for processing region P, the P region to form a high-frequency energy to ignite and sustain a plasma. 在基台106上方放置待要加工的基片W, 该基片W可以是待要刻蚀或加工的半导体基片或者待要加工成平板显示器的玻璃平板。 The semiconductor substrate to be processed is placed over the base 106 of the substrate W, the substrate W can be etched or to be processed or to be processed into a flat panel display glass plate. 其中,所述基台106上设置有静电夹盘用于夹持基片W。 Wherein the base is provided with an electrostatic chuck 106 for holding the substrate W. 反应气体从气体源103中被输入至处理腔体内的气体喷淋头109, 一个或多个射频电源104可以被单独地施加在下电极上或同时被分别地施加在上电极与下电极上,用以将射频功率输送到下电极上或上电极与下电极上,从而在处理腔体内部产生大的电场。 The reaction gas from the gas source 103 is input to the process gas shower head cavity 109, one or more RF power source 104 may be separately or simultaneously applied to the lower electrode are respectively applied to the upper and lower electrodes, with in the RF power supplied to the lower electrode or the upper electrode and the lower electrode, thereby generating a large electric field in the processing chamber. 大多数电场线被包含在上电极和下电极之间的处理区域P内,此电场对少量存在于处理腔体内部的电子进行加速,使之与输入的反应气体的气体分子碰撞。 Most of the processing region P between the electric field lines are contained in the upper and lower electrodes, the electric field inside the electronic present in small amounts to accelerate the processing chamber, so that collisions with gas molecules of the reaction gas input. 这些碰撞导致反应气体的离子化和等离子体的激发,从而在处理腔体内产生等离子体。 These collisions result in ionization and excitation of a plasma of reactive gas to generate plasma in the process chamber. 反应气体的中性气体分子在经受这些强电场时失去了电子,留下带正电的离子。 Neutral gas molecules of the reaction gas is lost electrons when subjected to these strong electric field, leaving positively charged ions. 带正电的离子向着下电极方向加速,与被处理的基片中的中性物质结合,激发基片加工,即刻蚀、淀积等。 Positively charged ions to accelerate toward the lower direction of the electrode, in combination with neutral species in the substrate to be processed, the excitation substrate processing, i.e., etching, deposition or the like. 在等离子体处理腔室100的合适的某个位置处设置有排气区域,排气区域与外置的排气装置(例如真空泵105)相连接,用以在处理过程中将用过的反应气体及副产品气体抽出腔室。 Exhaust means includes an exhaust region, an exhaust region and external (e.g., a vacuum pump 105) at a location suitable plasma processing chamber 100 is connected to the reaction gas used in the process and product gases out of the chamber. 其中,等离子体约束环107用于将等离子体约束于处理区域P内。 Wherein the plasma confinement ring 107 for confining the plasma in the processing region P. 腔室侧壁102上连接有接地端,其中设置有一电阻108。 The upper chamber has a side wall 102 connecting the ground terminal, a resistor 108 disposed therein.

[0031] 图2是根据本发明一个具体实施例的等离子体处理腔室的基台的结构示意图。 [0031] FIG. 2 is a schematic view of the base of the plasma processing chamber according to the present invention a particular embodiment. 如图1所示,基台106包括一基体1061,在所述基体1061中设置有若干冷却液通道1062用于降低基台106以及其上放置的基片W的温度。 1, base station 106 includes a substrate 1061, 1061 is provided in the base body in a number of coolant passage 1062 for reducing the temperature of the base station 106 and the substrate W placed thereon. 其中,冷却液通道1062下接一冷却液循环装置(未示出),冷却液循环装置用于循环向设置于基台主体1061中的冷却液通道1062提供冷却液体。 Wherein, then a coolant circulation apparatus (not shown), means for circulating a cooling fluid circulation is provided in the base body to the coolant passage 1061 provides 1062 the cooling liquid coolant passage 1062. 基台106的最上层设置了一层第一绝缘层1063,其中内嵌有静电电极1064。 The base layer of the uppermost layer a first insulating layer provided 1,063,106, wherein an electrostatic electrode 1064 embedded. 其中,所述静电电极1064外接有一静电电源(未不出),用于产生静电吸附力从而将基片W夹持于第一绝缘层1063上方进行制程。 Wherein the electrostatic electrode 1064 has a static external power source (not not), for generating an electrostatic attraction force to the substrate W clamped over the first insulating layer 1063 from a process. 在该第一绝缘层1063下方设置有第二绝缘层1066, 其中内嵌有加热器1065。 Below the first insulating layer 1063 is provided with a second insulating layer 1066, where the heater 1065 embedded. 加热器1065由金属制成,有可能是一整片式结构,也可以是若干基本处于同一平面上的小金属薄片。 The heater 1065 is made of metal, there may be a single piece structure, or may be a plurality of small sheet metal substantially in the same plane. 加热器1065外接电源装置,从而在通电的情况下发热使得基台106以及其上放置的基片W的问题得到提升。 An external heater power supply device 1065, so that the problem of heating the base 106 and the substrate W placed thereon in case of power may be raised. 因此,基台106的温度调节装置由冷却液循环通道1062以及加热器1065构成,前者用于降温,后者用于升温,两者共同作用, 协同控制基台106及其上放置的基片W的温度。 Thus, the temperature of the base station apparatus 106 is adjusted by the cooling fluid circulation passage 1062 and a heater 1065 configured, the former for cooling, which is used for heating, both together, cooperative control is placed on the base 106 and the substrate W temperature.

[0032] 前文已述及,在某些特定制程中,制程需要基台106中的基体1061中冷却液通道1062上表面所在平面和第二绝缘层1066中内嵌的加热器1065下表面之间的温度差达到一定数值,例如大于50°C。 [0032] has been previously mentioned, between the lower surface of the heater 1065 is located on the surface of the second insulating layer 1062 and the plane 1066 of the base station 106 in the coolant passage 1061 embedded in specific process, the process needs yl the temperature difference reaches a certain value, for example greater than 50 ° C.

[0033] 热量公式为: [0033] calorie formula is:

[0034] [0034]

Figure CN104952682AD00051

[0035] 其中,Q为热量,A为常数系数,K为热导率,Ax和基体1061中冷却液通道1062 和第二绝缘层1066中内嵌的加热器1065之间的材料厚度有关,而AT则表示基体1061中冷却液通道1062和第二绝缘层1066中内嵌的加热器1065之间的温度差。 [0035] wherein, Q is the heat, A is a constant coefficient, K is the thermal conductivity, the material thickness between the substrate 1061 and the Ax coolant passage 1062 and the second insulating layer 1066 is embedded in the heater 1065, whereas AT represents a temperature difference between the substrate 1061 and the coolant passage 1062 in a second insulating layer embedded in the heater 1066 1065 difference.

[0036] 热量Q不能改变,因为为了基体1061中冷却液通道1062和第二绝缘层1066中内嵌的加热器1065之间的温度差而导致热能消耗过高是得不偿失的。 [0036] The heat Q can not be changed, since the temperature difference between the substrate 1061 to a coolant passage 1062 and the second insulating layer embedded in the heater 1066 1065 excessive energy consumption caused by a difference pay. 因此,在热量Q和A不变的情况下,能够改变的只有AX和K。 Thus, the heat quantity Q and A in the same case, changing only the AX and K. 由于AX和基体1061中冷却液通道1062和第二绝缘层1066中内嵌的加热器1065之间的材料厚度有关,由于等离子体处理腔室内部的真空空间有限,因此不可能增加基体1061中冷却液通道1062和第二绝缘层1066中内嵌的加热器1065之间的材料厚度来增加Ax,从而拉大AT。 Since the material thickness between the substrate 1061 and the AX coolant passage 1062 and the second insulating layer embedded in the heater 1066 about 1065, due to the limited space inside the vacuum plasma processing chamber, it is impossible to increase the cooling base 1061 fluid channels 1062 and 1066 in the second insulating layer embedded between the material thickness of the heater 1065 to increase Ax, thereby widening AT. 因此要提高基体1061中冷却液通道1062和第二绝缘层1066中内嵌的加热器1065之间的温度差AT,只能改变热导率K。 Therefore to improve the temperature difference AT between the base 1061 of the second coolant passage 1062 and insulating layer 1066 embedded in the heater 1065, changing only the thermal conductivity K.

[0037] 其中,热导率K其实是基体1061中冷却液通道1062和第二绝缘层1066中内嵌的加热器1065之间的材料的平均热导率。 [0037] where, in fact, the thermal conductivity K is the average thermal conductivity of the material between the matrix 1061 a coolant passage 1062 and the second insulating layer 1066 embedded in the heater 1065. 传统的等离子体处理腔室的基台106的基体1061 一般是由铝或者铝合金制程的,它们的热导率大概为167w/mk。 Traditional base substrate 1061 in a plasma processing chamber 106 is generally made of aluminum or an aluminum alloy manufacturing process, their thermal conductivity approximately 167w / mk. 在热量公式中其他参数皆不变的情况下,减小基体1061中冷却液通道1062和第二绝缘层1066中内嵌的加热器1065 之间的材料的平均热导率K,就能够提高基体1061中冷却液通道1062和第二绝缘层1066 中内嵌的加热器1065之间的温度差AT。 In the case where the heat equation are other parameters constant, the average thermal conductivity of the material between the second insulating layer 1062 and 1066 to reduce the coolant passage 1061 embedded in the heater matrix 1065 K, the substrate can be improved AT temperature difference between the coolant passage 1061 and the second insulating layer 1062 1066 1065 embedded in the heater. 因此,可以将基台106的基体1061的材料替换成热导率更低的材料,例如金属钛,其热导率仅为15~25w/mk,相较于原本热导率大概为167w/mk的铝或者铝合金制成的基体1061,基体1061中冷却液通道1062和第二绝缘层1066中内嵌的加热器1065之间的温度差AT得到了升高。 Thus, the base material may be replaced with the 1061 base 106 to a lower thermal conductivity material, such as metallic titanium, the thermal conductivity rate was 15 ~ 25w / mk, compared to the original thermal conductivity approximately 167w / mk substrate 1061 made of aluminum or an aluminum alloy, the temperature difference AT between the base 1061 and the coolant passage 1062 in a second insulating layer 1066 embedded in the heater 1065 has been increased.

[0038] 如图2所示,为了进一步地升高基体1061中冷却液通道1062和第二绝缘层1066 中内嵌的加热器1065之间的温度差AT,本发明在所述基台基体1061的所述冷却液通道1062上表面所在平面与所述第二绝缘层1066下表面之间的材料层中设置有若干空洞。 [0038] As shown in FIG. 2, in order to further increase the temperature difference AT between the base 1061 of the second coolant passage 1062 and insulating layer 1066 embedded in the heater 1065, the present invention is the base pedestal 1061 the coolant passage on the surface where the layer of material 1062 between the plane 1066 and the lower surface of the second insulating layer is provided with a plurality of voids. 由于空气的热导率仅为〇. 〇257w/mk,因此设置了若干空洞的基台基体1061的所述冷却液通道1062与所述第二绝缘层1066之间的材料层的等效热导率也得到了极大降低,使得基台基体1061的所述冷却液通道1062与所述第二绝缘层1066之间温度差AT得到非常大地提高,满足了制程所需。 Since the thermal conductivity rate of air is square. 〇257w / mk, and therefore provided a number of the hollow base pedestal coolant passage 1061 and 1062 equivalent thermal conductivity of the second material layer between the insulating layer 1066 ratio has been greatly reduced, so that the temperature difference AT between the base station base 1062 and the second insulating layer 1066 to give very greatly improved, the process required to meet the body of the coolant passage 1061.

[0039] 需要说明的是,如图2或3所示,上文提及的冷却液通道1062并非占据了机台基体1061的整个平面,从基台106横切面来看,冷却液通道1062是间隔设置的。 [0039] Incidentally, as shown in FIG. 2 or 3, the above-mentioned coolant passage 1062 is not occupy the entire plane of the machine pedestal 1061, 106 from the cross-section view of the base, a coolant passage 1062 intervals. 然而,上文提及的基台基体1061的所述冷却液通道1062的上表面所在的平面是指横亘基台106的连续的平面。 However, the above-mentioned pedestal base of plane on a surface of the coolant passage 1061 is located 1062 refers to a continuous plane 106 runs through the base.

[0040] 可选地,如图2所示,所述基台基体1061和所述第二绝缘层1066之间还包括一温度隔离层1067,在该温度隔离层1067中设置有若干空洞G1。 [0040] Alternatively, as shown in FIG. 2, the base pedestal body further includes a temperature between 1061 and the separation layer 1067 of the second insulating layer 1066, the temperature in the separation layer 1067 is provided with a plurality of hollow G1.

[0041] 可选地,如图3所示,所述基台基体1061中位于所述冷却液通道1062之上的区域设置有若干空洞G2。 [0041] Alternatively, as shown in FIG. 3, the substrate pedestal 1061 is located above the coolant passage 1062 is provided with a plurality of hollow areas G2.

[0042] 典型地,所述基台基体1061是由金属钛制成的。 [0042] Typically, the base metal pedestal 1061 is made of titanium. 优选地,所述基台基体1061中的至少冷却液通道1062上表面以下的区域是由金属钛制成的。 Preferably, the surface area of ​​the base 1062 of the pedestal member 1061 is at least a metal coolant passage is made of titanium.

[0043] 可选地,所述温度隔离层1067的主体是由金属钛制成的。 [0043] Alternatively, the body temperature of the spacer layer 1067 is made of titanium metal.

[0044] 需要说明的是,空洞设置于温度隔离层1067中还是所述基台基体1061中位于所述冷却液通道1062之上的区域皆可实现本发明的发明目的,只要空洞位于所述基台基体1061中位于所述冷却液通道1062之上的区域之间就可以。 [0044] Incidentally, the cavity is provided in the region of 1067 or above the coolant passage 1062 of the base pedestal 1061 is located in the spacer layer temperature Jieke object of the present invention to achieve the invention, as long as the base located in the cavity region can be between the pedestal 1061 is located above the coolant passage 1062.

[0045] 至于温度隔离层1067还是基台基体1061的材料,其优选地为金属钛。 [0045] As the separation layer 1067 or the base material temperature pedestal member 1061, which is preferably titanium. 然而,如果局部地将温度隔离层1067或基台基体1061的材料替换成其他金属也可实现本发明的发明目的,只要基体1061中冷却液通道1062和第二绝缘层1066之间材料的等效热导率低于金属钛的热导率15~25w/m_k即可。 However, if locally the separation layer 1067 or alternatively the temperature of the base pedestal 1061 to other metal materials may be achieved according to the present invention object of the invention, as long as equivalent material between the base 1061 and the coolant passage 1062 of the second insulating layer 1066 thermal conductivity lower than thermal conductivity of titanium metal 15 ~ 25w / m_k can.

[0046] 典型地,所述空洞的体积范围占所述冷却液通道上表面与所述第二绝缘层下表面之间的材料层总体积的30% 到70%,包括31%、33. 5%、38%、45%、47. 77%、50%、53%、55%、61%、 64%、67%、85%、87. 55%、88% 等。 [0046] Typically, the void volume range on account of the coolant passages 30 to 70% of the total volume of the material layer between the lower surface of the second insulating layer, comprising 31%, 33.5 %, 38%, 45%, 47.77%, 50%, 53%, 55%, 61%, 64%, 67%, 85%, 87.55%, 88%, etc.

[0047] 本发明第二方面提供了一种等离子体处理腔室,其中,所述等离子体处理腔室包括本发明第一方面所述的基台106。 [0047] The second aspect of the present invention provides a plasma processing chamber, wherein said plasma processing chamber includes a base station 106 according to a first aspect of the present invention.

[0048] 可选地,如图3所示,所述基台基体1061中位于所述冷却液通道1062之上的区域设置有若干空洞G2。 [0048] Alternatively, as shown in FIG. 3, the substrate pedestal 1061 is located above the coolant passage 1062 is provided with a plurality of hollow areas G2.

[0049] 典型地,所述基台基体1061是由金属钛制成的。 [0049] Typically, the base metal pedestal 1061 is made of titanium. 优选地,所述基台基体1061中的至少冷却液通道1062上表面以下的区域是由金属钛制成的。 Preferably, the surface area of ​​the base 1062 of the pedestal member 1061 is at least a metal coolant passage is made of titanium.

[0050] 可选地,所述温度隔离层1067的主体是由金属钛制成的。 [0050] Alternatively, the body temperature of the spacer layer 1067 is made of titanium metal.

[0051] 需要说明的是,空洞设置于温度隔离层1067中还是所述基台基体1061中位于所述冷却液通道1062之上的区域皆可实现本发明的发明目的,只要空洞位于所述基台基体1061中位于所述冷却液通道1062之上的区域之间就可以。 [0051] Incidentally, the cavity is provided in the region of 1067 or above the coolant passage 1062 of the base pedestal 1061 is located in the spacer layer temperature Jieke object of the present invention to achieve the invention, as long as the base located in the cavity region can be between the pedestal 1061 is located above the coolant passage 1062.

[0052] 至于温度隔离层1067还是基台基体1061的材料,其优选地为金属钛。 [0052] As the separation layer 1067 or the base material temperature pedestal member 1061, which is preferably titanium. 然而,如果局部地将温度隔离层1067或基台基体1061的材料替换成其他金属也可实现本发明的发明目的,只要基体1061中冷却液通道1062和第二绝缘层1066之间材料的等效热导率低于金属钛的热导率15~25w/m_k即可。 However, if locally the separation layer 1067 or alternatively the temperature of the base pedestal 1061 to other metal materials may be achieved according to the present invention object of the invention, as long as equivalent material between the base 1061 and the coolant passage 1062 of the second insulating layer 1066 thermal conductivity lower than thermal conductivity of titanium metal 15 ~ 25w / m_k can.

[0053]尽管本发明的内容已经通过上述优选实施例作了详细介绍,但应当认识到上述的描述不应被认为是对本发明的限制。 [0053] While the present invention have been described in detail by the above preferred embodiments, it should be appreciated that the above description should not be construed as limiting the present invention. 在本领域技术人员阅读了上述内容后,对于本发明的多种修改和替代都将是显而易见的。 After the skilled artisan reading the foregoing, various modifications and alternatives to the present invention will be apparent. 因此,本发明的保护范围应由所附的权利要求来限定。 Accordingly, the scope of the invention be defined by the appended claims. 此外,不应将权利要求中的任何附图标记视为限制所涉及的权利要求;"包括"一词不排除其它权利要求或说明书中未列出的装置或步骤;"第一"、"第二"等词语仅用来表示名称,而并不表示任何特定的顺序。 Further, in the claims should not be considered as any reference numerals as claimed in claim limitations involved; "comprising" does not exclude other steps or apparatus as claimed in claim or the specification are not listed; "first," "second two "and other terms are only used to indicate the name, but does not indicate any particular sequence.

Claims (16)

1. 一种用于等离子体处理腔室的基台,其中,所述基台包括: 基台基体,其中设置有冷却液通道; 基台基体的上层结构包括:第二绝缘层,其中设置有加热器;以及直接设置于该第二绝缘层之上的第一绝缘层,其中设置有静电电极; 其中,在所述基台基体的所述冷却液通道上表面所在平面与所述第二绝缘层下表面之间的材料层中设置有若干空洞。 A base station for a plasma processing chamber, wherein, said base station comprising: a pedestal base member, wherein a coolant passage; pedestal base upper body structure comprising: a second insulating layer, wherein there is provided a heater; and a first insulating layer disposed directly on the second insulating layer, wherein the electrostatic electrode is provided; wherein, on the surface where the coolant passage pedestal base member plane and the second insulating material layer disposed between the surface of the lower layer is provided with a plurality of voids.
2. 根据权利要求1所述的基台,其特征在于,所述基台基体和所述第二绝缘层之间还包括一温度隔离层,在该温度隔离层中设置有若干空洞。 The base station according to claim 1, wherein said base and said pedestal further comprises a spacer layer disposed between the temperature of the second insulating layer, the temperature is provided in a number of cavity spacer layer.
3. 根据权利要求1所述的基台,其特征在于,所述基台基体中位于所述冷却液通道之上的区域设置有若干空洞。 3. The base according to claim 1, characterized in that the base region of the pedestal body is positioned above the coolant passage is provided with a plurality of voids.
4. 根据权利要求2或3所述的基台,其特征在于,所述基台基体是由金属钛制成的。 The base station of claim 2 or claim 3, characterized in that the base body is made of a metal pedestal made of titanium.
5. 根据权利要求2或3所述的基台,其特征在于,所述基台基体中的至少冷却液通道上表面以下的区域是由金属钛制成的。 The base station of claim 2 or claim 3, wherein at least a region below the surface of the substrate on the coolant passage pedestal body is made of metal titanium.
6. 根据权利要求2或3所述的基台,其特征在于,所述温度隔离层的主体是由金属钛制成的。 The base station of claim 2 or claim 3, wherein the temperature of the body is made of a metal spacer layer is made of titanium.
7. 根据权利要求2或3所述的基台,其特征在于,所述温度隔离层中至少其不包括若干空洞的区域是由金属钛制成的。 The base station of claim 2 or claim 3, wherein the temperature of said release layer which does not include at least a plurality of hollow regions are made of titanium metal.
8. 根据权利要求1所述的基台,其特征在于,所述空洞的体积范围占所述冷却液通道上表面与所述第二绝缘层下表面之间的材料层总体积的30%到90%。 Base station according to claim 1, wherein the voids volume range of 30% on the surface of the coolant passage total volume of the second insulating layer between the surface layer of material to 90%.
9. 根据权利要求1所述的基台,其特征在于,所述冷却液通道还通过若干管道外接有一冷却液循环装置,所述冷却液循环装置用于循环提供冷却液。 Base station according to claim 1, wherein said coolant passage through an external conduit having a plurality of cooling fluid circulating means, the circulating means for circulating the cooling fluid to provide cooling fluid.
10. 根据权利要求9所述的基台,其特征在于,所述加热器还外接有一电源装置。 10. The base station according to claim 9, characterized in that the heater further has an external power supply unit.
11. 根据权利要求10所述的基台,其特征在于,所述直流电极还外界有一直流电源。 11. The base station according to claim 10, wherein said DC electrode further has external DC power.
12. -种等离子体处理腔室,其中,所述等离子体处理腔室包括权利要求1至3、8至11 中任一项所述的基台。 12. - species plasma processing chamber, wherein said plasma processing chamber, including the claims 1 to 3, 8 base according to claim 11.
13. 根据权利要求12所述的等离子体处理腔室,其特征在于,所述基台基体是由金属钛制成的。 13. The plasma processing chamber as claimed in claim 12, characterized in that the base body is made of a metal pedestal made of titanium.
14. 根据权利要求12所述的等离子体处理腔室,其特征在于,所述基台基体中的至少冷却液通道上表面以下的区域是由金属钛制成的。 14. The plasma processing chamber as claimed in claim 12, characterized in that, on at least a region below the surface of the coolant passage pedestal base body is made of metal titanium.
15. 根据权利要求12所述的等离子体处理腔室,其特征在于,所述温度隔离层的主体是由金属钛制成的。 15. The plasma processing chamber as claimed in claim 12, characterized in that the body temperature of a metal spacer layer is made of titanium.
16. 根据权利要求12所述的等离子体处理腔室,其特征在于,所述温度隔离层中至少其不包括若干空洞的区域是由金属钛制成的。 16. The plasma processing chamber as claimed in claim 12, wherein said temperature in at least a release layer does not comprise a plurality of hollow regions are made of titanium metal.
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