TW201131300A - Low molecular weight positive radiation-sensitive resin composition and forming method of resist pattern - Google Patents

Abstract

The object of this invention is to provide a radiation-sensitive composition containing a resist material (compound) which has excellent shape of obtained resist pattern and easy to quality control, and a forming method of resist pattern using the radiation-sensitive composition. The object is solved by a positive radiation-sensitive composition including a specific low molecular compound and the forming method of resist pattern using the composition.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist pattern forming method which is useful for a positive type sensation of a specific low molecular weight compound and a radioactive composition of a saffron (four). [Prior Art] The conventional light-sensitive material is a high molecular weight positive photoresist. However, 'the molecular weight of the positive-type plant material (polymer) is as large as about 10,000 to H), and the molecular weight distribution is also wide. Therefore, the lithography + of the polymer-based photoresist is used to produce the surface of the fine pattern. The thick chain, it is difficult to control the size of the pattern, and the yield is reduced. Therefore, lithography using the previous high/knife-based photoresist material has a limit in miniaturization. In order to make a more subtle case, dj has various low molecular weight positive photoresist materials. Previous low molecular weight positive photoresist materials (compounds) are typically obtained by reacting an acid dissociable functional group-directing reagent with a low molecular weight. However, in this case, the simple photoresist material becomes an A compound containing a π-different σ-containing substance containing a silk base, and it is difficult to obtain a control ratio. (4) It is not practical (refer to the patent document 〇. When the protective group is introduced on all the desired substrates of the low-knife, it is not practical to use the pure material f ' at this time. 'The sensitivity of the positive photoresist using the pure substance is not practical (refer to the patent document 丨) Further, there is a low molecular weight and a low-molecular introduction, and a purely qualitative reporter α is obtained only by selectively introducing a protective group on the green (see Patent Document 2). However, at this time, there is a low introduction of a spicy group. The molecular weight is large, and the low molecular weight of the low-molecular weight 4 201131300. type resist material obtained by the method has a low purity, and is expected to be improved. PRIOR ART DOCUMENT Patent Document Patent Document 1: Patent Application Patent Publication No. 2 SUMMARY OF THE INVENTION An object of the present invention is to provide a positive-type radioactive composition that solves the above problems and light using the positive-type radioactive composition. Resistance map The present inventors have diligently studied to solve the above problems, and as a result, have found that a useful positive-type radioactive composition containing a specific low molecular weight compound is effective for solving the above problems, and provides a good resist pattern shape, thereby completing The present invention is as follows: 1. A positive-type radioactive composition containing: Compound (A) satisfying all of the following conditions a) to e), satisfying the following f) to i) Compound (B) of all conditions is selected from any group consisting of visible light, ultraviolet light, excimer laser, electron beam, extreme ultraviolet (EUV), X-ray, and ion beam. An acid generator (C) which directly or indirectly generates an acid upon irradiation, an acid diffusion controlling agent (E)' and a solvent; and the composition contains 1% by weight (wt%) to 80% by weight of a solid component and 20% by weight ～99 wt% of the solvent, the sum of the weight of the compound (A) and the weight of the compound (B) is 50% by weight to 99% by weight based on the total weight of the solid component. 201131300 a) Molecular weight: 400~3000; b) Not in the quarantine liquid (tetramethyl ammonium hydroxide (TMAH) is 2.38 wt〇 / 〇); c) by the action of acid And become soluble in the test developer (TMAii is 2.38 wt%); d) has at least one phenolic hydroxyl group or carboxyl group introduced with an acid dissociable functional group; e) 1.0〇SMw/Mr^l. 〇5 (Mw: number average molecular weight, Mw: weight average molecular weight); f) molecular weight: 350~2500; g) soluble in the developer (TMAH is 2.38wt%); h) at least one phenol in the molecule A hydroxyl group or a carboxyl group; i) l_0〇SMw/Mn$l.〇5. 2. The positive-type radioactive composition according to Item 1, wherein the compound (A) is a compound having an acid-dissociable functional group introduced on the compound (8) and having a hysteresis-functional group (eight hearts). The positive-type radioactive composition according to Item 1, wherein the compound (B) is a compound (Bb) which has an acidic functional group on all the moieties and on the silk. a radioactive composition wherein the above compound (A) is the above compound (Aa), which is represented by the following formula (ia): a cyclic compound (A1), and the above compound (8) is the above-mentioned compound

Bb) is a cyclic compound represented by the following formula (1B) ([Chemical Formula 1] 6 201131300

(In the formula (1A), L is independently a linear or branched stretched wire, a carbon number bond, an extended aryl group of 1 to 20 6 to 24, a number of 〇 3 = an exocyclic group; The free carbon number in the group consisting of any combination of carbon number bases, the carbon number of 20, and the number of charcoal 3~= group 'R are independently 20 selected aryl groups, carbon number U 攸 oxy group, = a ruthenium group in the group consisting of a carbon number of 2 to 20, a chaotic group, a nitro group, a heterocyclic ring, a = atom, and a carbon number 2G-based group, and a substituted thiol group having a carbon number of 2 to 20, a substituted carbon of 3 to 2 Å, an L-substituted-n-propyl group having 4 to 20 carbon atoms, a 1-branched alkyl group having 3 to 2 carbon atoms, a decyl group having 1 to 20 carbon atoms, and a carbon number of 2 ~2〇 fluorenyl group, stone-tolerant number 2~20 1-substituted methoxyoxyalkyl group, carbon number 2~2〇 cyclic ether group, carbon number 2~20 alkoxycarbonyl group and alkoxycarbonyl group An acid-dissociable functional group in a group consisting of alkyl groups, or a hydrogen atom, R' is independently a thio group having 2 to 20 carbon atoms, or the following formula 201131300 [Chemical 2]

The group represented by p, R4 is an alkyl group selected from a carbon number of 1 to 20, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, and cyanogen. a functional group in the group consisting of a nitro group, a heterocyclic group, a sulfonyl group, and an alkylalkyl group having 1 to 20 carbon atoms, or a substituted methyl group having a carbon number of 2 to 20, and a carbon number of 3 to a 1-substituted ethyl group of 20, a 1-substituted-n-propyl group having 4 to 20 carbon atoms, a 1-branched alkyl group having 3 to 20 carbon atoms, a decyl group having 1 to 20 carbon atoms, and a fluorene having 2 to 20 carbon atoms. a group consisting of a 1-substituted alkoxyalkyl group having 2 to 20 carbon atoms, a cyclic ether group having 2 to 20 carbon atoms, an alkoxycarbonyl group having 2 to 20 carbon atoms, and an alkoxycarbonylalkyl group The acid dissociable functional group, at least one of R1 or R4 is an acid dissociable functional group, R5 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, m is an integer of 1 to 4, and p is 0 to 5 Integer. ) [Chem. 3] 8 201131300

R1ai; (In the formula (IB), La is independently a linear or branched alkyl group selected from a single bond, a carbon number of 1 to 20, a cycloalkyl group having a carbon number of 3 to 20, and a carbon number of 6 to 24 Aryl group, -0-, -0C(=0)-, -0C(=0)0-, -N(R5A)-C(=0)-, -N(R5A)-C(=0) a divalent group in the group consisting of 0-, -S-, -SO-, -so2-, and any combination of the groups, R1A is independently selected from an alkyl group having a carbon number of 1 to 20, and a carbon number of 3 ～20 cycloalkyl, aryl 6 to 20, alkoxy having 1 to 20 carbon atoms, cyano group, nitro group, hydroxyl group, heterocyclic group, halogen atom, carboxyl group, and carbon number 1 to 20. a functional group in a group consisting of alkylalkylalkyl groups, or a hydrogen atom, R" is independently an alkyl group having 2 to 20 carbon atoms, or the following formula [Chemical Formula 4]

The base 'r4a represented by 201131300 is a wire selected from the group consisting of a carbon number, a cycloalkyl group having a carbon number of 3, an aryl group having a carbon number of 6 to 2 fluorene, an alkoxy group having a carbon number, a cyano group, and a nitro group. a functional group in a group consisting of a heterocyclic group, a minus, a self atom, a thief, and an alkyl decyl group having a carbon number of 20: or a substituted fluorenyl group having an inverse number of 2 to 20, a carbon number of 3 to 2〇〇·substituted ethyl group, 1—substituted-n-propyl group having 4 to 20 carbon atoms, fluorene-branched alkyl group having 1 to 20 carbon atoms, and 1 to 2 carbon atoms; a mercapto group, a C 2 to 2 fluorene substituted alkoxyalkyl group, a carbon number 2 to 20 cyclic ether group, a carbon number 2 to 2 fluorene alk 2 carbonyl group, and an alkoxycarbonylalkyl group The acid dissociable functional group in the group, at least one of R1A^R4A is a heterozygous or silk, r5a is a hydrogen atom or an alkyl group having a carbon number of 1 to 20, mA is an integer of i~4, pA is 0~5 The integer. A method for forming a photoresist pattern, comprising the steps of: forming a photoresist film on a substrate by using the radiation-sensitive composition according to any one of items 1 to 4; Exposing; and developing the photoresist film to form a photoresist pattern. [Effect of the Invention] According to the present invention, it is possible to provide a positive radiation sensitive composition that solves the above problems, and a photoresist pattern forming method using the composition. In the present invention, since the photoresist compound which can be used for the positive-type radioactive composition can be made easy, the purity of the photoresist compound can be improved, and quality management can be facilitated. Further, the positive-type radioactive composition containing the photoresist compound provides a good photoresist pattern. [Embodiment] Hereinafter, the present invention will be described in detail. [Positive-type radioactive composition] The present invention relates to a positive-type radioactive composition containing: Compound (A) satisfying all the conditions of the following a) to e), satisfying the following f) to i) Compound (B) of all conditions is directly irradiated by radiation selected from the group consisting of visible light, ultraviolet light, excimer laser 'electron beam x ultraviolet light (EUV), X-ray, and ion beam Or indirectly generating an acid generator (C) 'acid diffusion controlling agent (E), and a solvent; and the composition comprises 1 wt% to 80 Wt% of a solid component and 2% by weight to 99% by weight of a solvent The sum of the weight of the above compound (A) and the weight of the compound (B) is from 50% by weight to 99% by weight based on the total weight of the solid component. a) Molecular weight: 400~5000; b) Insoluble in alkaline developing solution (TMAH is 2 38 wt%); c) It becomes soluble in alkaline developing solution by acid action (TMAH is 2.38 wt%) In the molecule; d) having at least one phenolic group or a thiol group introduced with an acid dissociable functional group; e) 1.00SMw/Mn^1.05; f) molecular weight: 350~4000; g) soluble in alkaline Developing solution (TMAH is 2.38wt%); h) having at least one phenolic hydroxyl group or carboxyl group in the molecule; i) l.OOSMw/MnSl.050 11 201131300 ^The so-called soluble in alkaline developing solution means The dissolution rate of the amorphous film produced by the spin coating method using a solution obtained by dissolving the compound in a solvent described later is 10 persons/sec or more. In addition, the insoluble in an alkali developing solution means that the dissolution rate of the amorphous film produced by dissolving the compound in a solvent described later and prepared by a spin coating method is 5 persons/sec or less. The Mw/Mn means that the polydispersity Μη is a number average molecular weight, and Mw is a weight average molecular weight, which can be determined by gpc analysis or the like. Mw / Mn is l. 〇〇 SMw / Md 〇 5, preferably l. 〇〇 SMw / MnS 1.03, more preferably 1.00SMw / MnS 1.01, Mw / Mn = 1.00 due to the inclusion of a single component 'resistance of the photoresist pattern The roughness is reduced, so it is especially good. The acid dissociable functional group refers to a group which can be introduced into a phenolic hydroxyl group and/or a carboxyl group and which is dissociated by an action of an acid to produce an original phenolic hydroxyl group and/or a carboxyl group, and can be chemically amplified from KrF or ArF. The tenth proposed by the hydroxystyrene resin or the (fluorenyl)acrylic resin used in the radiation-sensitive composition is appropriately selected. For example, preferred are substituted fluorenyl, 1-substituted ethyl, 1-substituted-n-propyl, 1-branched alkyl, nonylalkyl, aryl, 1-substituted alkoxymethyl, cyclic ether, And an alkoxycarbonyl group and the like. The above acid-dissociable functional group preferably has no crosslinkable functional group. The compound (A) is preferably used in all the phenolic hydroxyl groups of the compound (B) and the compound (Aa) having an acid dissociable functional group introduced into the carboxyl group in terms of ease of manufacture and quality management. The introduction of an acid dissociable functional group on all the phenolic hydroxyl groups and carboxyl groups of the compound (B) makes it easier to obtain the quality compared with the introduction of the acid dissociable functional group on a part of the 2011 20113300 thiol group and the sulfhydryl group. A highly pure compound that is advantageous in terms of management. The compound (B) is preferably a compound (Bb) which is not introduced with an acid dissociable functional group on all phenolic hydroxyl groups and carboxyl groups in terms of ease of manufacture and quality management. The compound (B) having an acid-dissociable functional group which is soluble in an alkaline developing solution can be obtained by introducing an acid-dissociable functional group to a part of the phenolic hydroxyl group and the thiol group, but the reaction control and quality thereof The management is more difficult than the compound (Bb) in which all of the phenolic hydroxyl groups and the carboxyl groups are not introduced with the acid dissociable functional group. In terms of ease of manufacture and quality management, it is more preferred to use the above compound (Aa) in combination with the compound (Bb). The ratio is appropriately determined by the dissolution rate of the solid component at 2.3 ° C for 2.38 wt% of the aqueous TMAH solution. Usually compound (Aa): compound (Bb) = 1 〇 ~ 9 〇: 10 to 90 (wt%), more preferably compound (Aa): compound (Bb) = 12 5 〜 50: 50 to 87.5 (wt% Particularly preferred is the compound (Aa): the compound (Bb) = 15 to 3 2: 7 to 85 (wt%). If the ratio is the above, the degree of resolution is obtained for high sensitivity, and the line edge roughness becomes small. In the present invention, the compound (A) is the above compound (Aa), that is, the cyclic compound (A1) represented by the following formula (1A), and the compound is the above compound (Bb)', that is, the following formula (1B) ) is represented as a compound (B1). ^ 口 [化5] 13 201131300t

(In the formula (1A), 'L is independently a linear or branched excipient selected from the group consisting of a cinnabar bond, a carbon number, a cyclinyl group having a carbon number of 3 to 2 Å, and an extended aryl group having a carbon number of 6 to 24. ...〇_, -OC(=〇)_, %(3)〇, _n(r5)-C(=0)_,·Ν(Ιι5κ(=0)α, _s~s〇, _s〇2 and these bases The divalent group in the group consisting of any combination, R1 is independently selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 2 carbon atoms, and carbon. a functional group in the group consisting of an alkoxy group, a cyano group, a nitro group, a heterocyclic group, a halogen atom, a carbon atom of 1 to 20, and a derivative of the group of 1 to 20, Selecting a substituted fluorenyl group having 2 to 20 carbon atoms, a stone and a 1-substituted ethyl group having 3 to 20 carbon atoms, a substituted-n-propyl group having a carbon number of 4 to 2 fluorene, and a 1-branched alkyl group having an inverse number of 3 to 20 a carbon number of 1 to 2 Å; a sulfonium group; a fluorenyl group having 2 to 2 carbon atoms; a fluorene-substituted alkoxyalkyl group having 2 to 20 carbon atoms; and a cyclic ether group having 2 to 20 carbon atoms; An acid-dissociable functional group in the group consisting of an alkoxycarbonyl group having 2 to 20 carbon atoms and an alkoxycarbonyl group, or a hydrogen atom, R, independently Number 2~20 alkyl group, or the following formula [Formula 6] 14 201 131 300

a group represented by P or a derivative of the group, R4 is an alkyl group selected from the group consisting of 碳20 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 2 carbon atoms, and a carbon number of 1 to 2 a functional group in the group consisting of alkoxy, cyano, nitro, heterocyclic, halogen atom, alkylalkylalkyl having 1 to 20 carbon atoms, and derivatives of such groups, or selected from a substituted fluorenyl group having 2 to 2 carbon atoms, a 1-substituted ethyl group having 3 to 20 carbon atoms, a 1 -substituted n-propyl group having 4 to 2 carbon atoms, and a 1-branched alkyl group having 3 to 20 carbon numbers a sulphur group having a carbon number of 1 to 2 Å, a fluorenyl group having 2 to 20 carbon atoms, a 1-substituted alkoxyalkyl group having 2 to 20 carbon atoms, a cyclic ether group having 2 to 2 carbon atoms, and carbon An acid dissociable functional group in the group consisting of 2 to 20 alkoxycarbonyl groups and an alkoxycarbonylalkyl group, at least one of R1 or R4 being an acid dissociable functional group, and R5 being a hydrogen atom or a carbon number烷基~2〇 alkyl, m is an integer from 1 to 4, and p is an integer from 〇 to 5) [Chem. 7] 15 201131300

mA (IB) (In the formula (IB), LA is independently a linear or branched stretching group selected from a single bond, a carbon number (10), a stretching group having a carbon number of 3 to 2 G, and a carbon number of 6 to 24 Aryl group, _〇_, _〇c(=〇)·, _〇c(=〇)〇, -N(RA)-C(=〇)-, -N(R5A)-C(=〇 a divalent group in the group consisting of 〇_, _s-, -SO-, -S02-, and any combination of singular groups, and R1A is independently selected from an alkyl group having a carbon number of 1 to 20, and a carbon number a cycloalkyl group of 3 to 20, an aryl group having 6 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, a cyano group, a nitro group, a hydroxyl group, a heterocyclic group, a halogen atom, a carboxyl group, and a carbon number of 1 to 2? An alkylalkyl group, a functional group in a group consisting of derivatives of the groups, or a hydrogen atom, R" independently an alkyl group having 2 to 20 carbon atoms, or the following formula [Chem. 8]

The group represented by the group or the derivative of the group, r4A is selected from the group consisting of carbon number 1 201131300. 〜2〇 filament, carbon number 3~2G ring filament, carbon number 6~20 aryl group, carbon number 1~2 a group consisting of a silk group, a cyano group, a rock wire, a heterocyclic group, a thiol group, a decyl group having a carbon atom number of 1 to 2 Å, and a derivative of the group a functional group, or a fluorenyl group having a carbon number of 2 to 20, a substituted fluorenyl group having 3 to 20 carbon atoms, a 1-substituted ethyl group having 3 to 20 carbon atoms, a carbon number of 4 to 2 Å, a substituted-n-propyl group, and a carbon number of 3 to 20 a branched alkyl group, a carbon number of alkaloid, an acid group having 2 to 20 carbon atoms, a 1 substituted alkoxyalkyl group having 2 to 2 carbon atoms, a cyclic ether group having 2:20 carbon atoms, and carbon The acid dissociable functional group in the group consisting of 2 to 2 (d) alkoxy group and alkoxycarbonylalkyl group, at least one of r1a or r4A is a phenolic hydroxyl group or a carboxyl group, and R5A is a hydrogen atom or a stone anastomosis The number of bases of 1 to 20, 1^ is an integer of 4, and pA is an integer of 〇5. The above-mentioned acid-dissociable functional group can be suitably selected from the group consisting of a hydroxyl group-based vinyl resin or a (fluorenyl) acrylic resin used in a chemically amplified photoresist composition for KrF or ArF. For example, a substituted fluorenyl group, a 1-substituted ethyl group, a 1-substituted-n-propyl group, a fluorene-branched alkyl group, an anthracene group, a aryl group, a 1-substituted alkoxy group, and a ring _ are preferably exemplified. a base, an alkoxycarbonyl group, and the like. The above acid-dissociable functional group preferably has no crosslinkable functional group. The substituted methyl group is usually a substituted fluorenyl group having 2 to 20 carbon atoms, preferably a substituted methyl group having 4 to 18 carbon atoms, and more preferably a substituted fluorenyl group having 6 to 16 carbon atoms. For example, an anthracene fluorenyl group, a methylthio fluorenyl group, an ethoxy fluorenyl group, a n-propoxy fluorenyl group, an isopropoxy fluorenyl group, a n-butoxymethyl group, a third butoxy group Base, 2-methylpropoxyfluorenyl, ethylthiodecyl, decyloxyethoxymethyl, phenyloxyindenyl, 1-cyclopentyloxymethyl, cyclohexyloxymethyl 17 201131300 benzyl, benzylthio sulfhydryl, phenacyl, 4- benzinyl, 4-methoxybenzyl sulfhydryl, piperonyl, and the following formula (7) Substituents represented and the like. [Chemistry 9]

(7) In the formula (7), R2 is an alkyl group having 1 to 4 carbon atoms, and examples of the alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, an isopropyl group, a n-propyl group, and a t-butyl group. n-Butyl and the like.) The 1-substituted ethyl group is usually a 1-substituted ethyl group having 3 to 20 carbon atoms, preferably a 1-substituted ethyl group having a carbon number of 5 to 18, and particularly preferably a carbon number of 7 to 16 Ethyl. For example, 1-methoxyethyl, 1-mercaptothioethyl, 1,1-dimethoxyethyl, 1-ethoxyethyl, 1-ethylthioethyl, 1 ,1-diethoxyethyl 18 201131300 base, n-propoxyethyl, isopropoxyethyl, n-butoxyethyl, tert-butoxyethyl, 2-mercaptopropoxyethyl , 1-phenoxyethyl, 1-phenylthioethyl, 1,1-diphenoxyethyl, 1-cyclopentyloxyethyl, 1-cyclohexyloxyethyl, 1- Phenylethyl, 1,1-diphenylethyl, and a substituent represented by the following formula (8). [化10]

(In the formula (8), R2 is the same as above.) The 1-substituted-n-propyl group is usually a 1-substituted-n-propyl group having a carbon number of 4 to 20, preferably a 1-substituted-positive group having a carbon number of 6 to 18. The propyl group is particularly preferably a 1-substituted-n-propyl group having a carbon number of 8 to 16. For example, 1-nonyloxy-n-propyl group, 1-ethoxy-n-propyl group and the like can be mentioned. The 1-branched alkyl group is usually a 1-branched alkyl group having 3 to 20 carbon atoms, preferably 19 2 〇 113130 〇 1 of a 1-branched alkyl group having 5 to 18 carbon atoms, particularly preferably a branch having a carbon number of 7 to 16. Burning base. For example, isopropyl, t-butyl, tert-butyl, 1,1-dimercaptopropyl, 1-decylbutyl, 1,1-didecylbutyl, 2-hydrazine fund Alkyl (2-methyl adamantyl), 2-ethyladamantyl and the like. The fluorenyl group is usually a decyl group having 1 to 20 carbon atoms, preferably a decyl group having 3 to 18 carbon atoms, and particularly preferably a decyl group having 5 to 16 carbon atoms. For example, tridecylalkyl, ethyl decyl decyl, decyl diethyl decyl, triethyl decyl, tert-butyl decyl decyl, and tert-butyl diethyl decane A group, a tert-butyldiphenylalkylene group, a tri-tert-butylfluorenyl group, a triphenyldecylalkyl group, and the like. The fluorenyl group is usually a fluorenyl group having 2 to 20 carbon atoms, preferably a fluorenyl group having 4 to 18 carbon atoms, and particularly preferably a fluorenyl group having 6 to 16 carbon atoms. For example, acetyl, phenoxy acetyl, propionyl, butyryl, heptanoyl, hexanoyl, pentamidine Valeryl, pivaloyl, isovaleryl, lauroyl, adamantyl carbonyl, benzoyl, and naphthoquinone Naphthoyl) and so on. The 1-substituted alkoxyfluorenyl group is usually a 1-substituted alkoxyfluorenyl group having 2 to 20 carbon atoms, preferably a 1-substituted alkoxyfluorenyl group having 4 to 18 carbon atoms, particularly preferably a carbon number of 6~ 16-substituted alkoxymethyl. For example, ι_cyclopentyl decyloxy fluorenyl group, 1-cyclopentylethoxy fluorenyl group, 1-cyclohexyl decyloxy fluorenyl group, 1-cyclohexyl ethoxy fluorenyl group, 1-ring ring An octyl decyloxy fluorenyl group and a 1-adamantyl fluorenyl fluorenyl group. 20 201131300 ^o/ivpif The magnetic base is usually a cyclic fluorenyl group having 2 to 20 carbon atoms, preferably a cyclic ether group having 4 to 18 carbon atoms, and particularly preferably a cyclic ether group having 6 to 16 carbon atoms. . For example, tetrahydropyranyl, tetrahydrofuranyl, tetrahydrothiopyranyl, tetrahydrothiofuranyl, 4-decyloxytetrazole can be cited. 4-methoxy tetrahydropyrany 1 and 4-methoxy tetrahydrothiopyranyl. The alkoxycarbonyl group is usually an alkoxycarbonyl group having 2 to 20 carbon atoms, preferably an alkoxycarbonyl group having 4 to 18 carbon atoms, and more preferably an alkoxycarbonyl group having 6 to 16 carbon atoms. For example, an oximeoxycarbonyl group, an ethoxycarbonyl group, a n-propoxycarbonyl group, an isopropoxycarbonyl group, a n-butoxycarbonyl group, a tert-butoxycarbonyl group, or n=0 of the following formula (9) An acid dissociable functional group or the like represented. The alkoxyalkyl group is usually an alkoxyalkyl group having 2 to 20 carbon atoms, preferably an alkoxycarbonylalkyl group having 4 to 18 carbon atoms, particularly preferably an alkoxy group having 6 to 16 carbon atoms. Carbonylalkyl. For example, a methoxycarbonylmethyl group, an ethoxycarbonyl fluorenyl group, a n-propoxycarbonylmethyl group, an isopropoxycarbonylmethyl group, a n-butoxycarbonyl fluorenyl group, or η of the following formula (9) The acid dissociable functional group represented by == ι 〜4, and the like. [2011 11] 21 201131300 ^ V / f x ^ ^μλΪ.

A0 gas U-(9) (In the formula (9), R2 is hydrogen or a linear or branched alkyl group having a carbon number of i to 4, and η is an integer of 0 to 4.) Among the acid-dissociable functional groups, Preferably substituted methyl, 1-substituted ethyl, 1-substituted decyloxy fluorenyl, cyclic yl, methoxycarbonyl, and alkyloxyalkyl, substituted fluorenyl, 1-substituted ethyl, alkane The oxycarbonyl group and the alkoxycarbonylalkyl group are more preferably higher in sensitivity, and more preferably are selected from the group consisting of a cycloalkane, a lactone (lact〇nekane) and a carbon number of 3 to 12 carbon atoms. 6 to 16 in the aromatic ring structure of the acid dissociation functional group slave number 3 to 12 ring-burning smoke can be a single ring, but the ring. Specific examples can be cited: single 璟栌 persimmon one ^ ring hydrocarbon, etc. More specifically, ff-% burnt, 1 ring of hexazone, etc., or 歹2. 2^^, □ h ring sister, isobornane, tricyclic, P, ro + norbornane Preferably, it is a diamond, a trioxane, a decane, a tricyclodecane, a carbon number of 3 to 12 "°, a hetero alkane, a tetraammine, or a diradical. 12 cycloalkane groups ' 22 201131300 6 to 16 The aromatic ring may, for example, be a benzene ring, a naphthalene ring, an anthracene ring, a phenanthrene ring, a pyrene ring or the like, preferably a benzene ring or a naphthalene ring, and particularly preferably a naphthalene ring. In particular, the acid-dissociable functional group selected from the group consisting of the respective groups represented by the following formula (10) is preferred because of high resolution.

(1 〇) (In the formula (10), 'R6A is a hydrogen atom or a straight bond of carbon number 丨~4 or 23 201131300 branched alkyl group, R6 is a hydrogen atom, a rehearsal, ΛL mountain.. I extinction number 1~4 Linear or branched alkyl, cyano, nitro, heterozygous, halogen% unsupported, carboxyl, ~ is an integer of 〇~4, 叱 is an integer from 1 to 5, and η〇 is 〇~4 In addition, the acid dissociable functional group Ri may include a repeating unit represented by the following formula (11), a formula (丨2) or R1 (R1 is the same as described above) as long as the effect of the present invention is not impaired. a substituent of the terminal group represented. [Chem. 13]

X〇R1)ne (X 2) In the formula (11) and/or the formula (12), R1 is the same as described above. L· is the same as above, and the father is preferably a single bond, an anthracene group, an ethyl group or a carbonyl group. Multiple Q towns can be the same or different.叱 is an integer of 44, % is an integer of 1 to 3, and X is an integer 〇~3 and satisfies +. Multiple 叱, shame, χ 24 201131300 j〇/iypif can be different from f. R3 is selected from the group consisting of a halogen atom, a decyl group, a cycloalkyl group, a ruthenium group, an alkoxy group, an aryloxy group, a dilute group, a fluorenyl group, an alkoxy group, a fluorenyloxy group, a silk group oxy group, and a cyano group. And the substituents in ^ which are composed of Shi Xiaoji. - the surface may be exemplified by a gas atom, a _ sub- and a ruthenium atom; a base group of an alkyl group, an ethyl group, a propyl group, a sulfonium group, a n-butyl group, a first butyl group, a second butyl group and the like having 1 to 4 carbon atoms; The alkyl group; the ring = may be exemplified by a cyclohexyl group, an ice-reducing silk, a gold-based group or the like; and the silk may be a toluene (tolyl), a xylyl group (xyly., a naphthyl group). Recording, second recording, etc.; burning oxygen = enumerated methoxy, ethoxy, secret ethoxy, propoxy, propyl propyl, isopropoxy, n-butoxy, isobutoxy, Examples include a second butoxy group, a decyloxy group, and the like, wherein the number of carbon atoms is 2, and the aryloxy group is exemplified by a phenoxy group; an alkenyl group; 〜4 alkenyl; the county can be listed as methyl, ethyl fluorenyl, propionic acid, butyl, succinyl, isoprene, pentylene, and the like, and the number of carbon atoms is 6 ^ aliphatic, and benzoquinone, A stupid base (her. (4) and other aromatic brewing base; the base group can be enumerated as f-oxyl, ethoxylated, =oxycarbonyl, isopropoxy, n-butoxy green, different The number of carbon atoms such as butoxy-based, second butoxy-based, and third-butoxy-based 5, alkoxy groups, the base oxygen can be exemplified by ethyl thio, (tetra) oxy, butyl oxy, isoyloxy pentyloxy, iso-succinyloxy, pentyloxy, etc.; The mercaptooxy group may, for example, be a benzyloxy group or the like. The R3 may be the same or different. In the present invention, the acid dissociable functional group means a property of detecting a soluble group by the cracking of 25 201131300 in the presence of an acid. The soluble group may include a heterobasic group, a silk, a hetero group, a hexafluoroisopropanol group, etc., and preferably a promiscuous radical and a slow base are particularly preferred. For the shape of the paleo-resolution, The compound of the above formula (1) is a group selected from the group consisting of aromatic mercapto compounds (All). The compound (A) represented by the above formula (1) is selected from the group consisting of aromatic mercapto compounds (All). The above-mentioned and the desired (AU) are subjected to a condensation reaction, and then obtained by reacting an acid-dissociable functional group-conductive compound. The aromatic-based compound (All) is a benzaldehyde and a derivative thereof, and for example, : benzofural, methyl benzaldehyde, dimethyl benzaldehyde, ethyl benzofural, Benzofurfural, butyl benzofural, ethyl methyl benzophenone, isopropyl sulfhydryl benzene disk, diethyl benzene disk, anisaldehyde, naphthaldehyde, Anthraldehyde, cyclopropylbenzaldehyde, cyclobutane benzaldehyde, pentane benzoic acid, cyclohexane benzoic acid, phenylbenzoic acid, naphthylbenzoic acid, adamantylbenzaldehyde, norbornene Benzoaldehyde, benzaldehyde, cumene benzaldehyde, n-propyl benzaldehyde, bromobenzoic acid, dinonylaminobenzaldehyde, cyclopropylbenzaldehyde, cyclobutane benzaldehyde, Cyclopentene benzoic acid, cyclohexane benzoic acid, phenylbenzene cap, naphthyl benzoquinone: adamantyl benzofural, norbornyl benzaldehyde, decyl benzofural, hydroxybenzaldehyde and dihydroxybenzene Formaldehyde, etc., preferably propyl benzaldehyde, butyl benzofural, hydroxybenzaldehyde, cyclohexyl benzene aldehyde, phenyl benzaldehyde, more preferably propyl benzofural, butyl benzofural, cyclohexyl Benzofurfural and phenylbenzaldehyde, 26 201131300 jo/iypif x Linhex. Material_Base compound The invention of the effect of the first mu has a linear or scalloped wire having a carbon number of 1 to 4, a minus, a lining, a money atom and the like. The aromatic compound (All) may be used singly or in combination of two or more. Examples of the human soil (M2) include benzene age, catechol, resorcinol (res〇rcin〇1), hydroquine, and pyrogallol which may have a substituent described later. Pyr〇gall〇1), etc. are preferably hydrazine-substituted benzene, meta-benzene stellate, ortho-benzene, and more preferably benzene-dimer, or phthalate. Lai (A12) may have a linear or branched carbon having a carbon number of 、~, a cyclic alkyl group having a carbon number of -20, a aryl group having a carbon number of 6 to 2 Å, and a cyanide in a range not detracting from the effects of the present invention. Base, meridine, dentate atom, etc. Lai (A12) can be used, or two or more types can be used in combination. The compound represented by the above formula (1B) can be produced by a known method. For example, by using an organic solvent such as methanol or ethanol, a phenol (A12) or an acid catalyst (hydrochloric acid, sulfuric acid or the like) is used in an amount of from 1 mol to 1 mol per mol of the aromatic carbonyl compound (All). For the benzene benzenesulfonic acid, etc., it is reacted at ～150 C for 0.5 hr to 20 hr. After filtration, it is washed with an alcohol such as methanol, washed with water, filtered, separated, and dried. It can also be obtained by similarly using an alkaline catalyst (sodium hydroxide, cesium hydroxide or H-diazabicyclo [5.4.0] undecene-7, etc.) instead of the acid catalyst. Further, the compound represented by the above formula (1B) may be a halogenated ruthenium or a ruthenium-based alloy, and the aromatic group-based compound (AH) may be made into a dihalide, and then the isolated dihalide and the phenol (A12) may be obtained. Reaction and 27 201131300. I Li 10 f manufacturing. The compound (A) is obtained by introducing an acid dissociable functional group on at least one of a divalent radical or a carboxyl group of the compound (B). A method of introducing an acid dissociable functional group to at least one phenolic hydroxyl group or carboxyl group of the compound (B) is known. For example, an acid dissociable functional group may be introduced on at least one of a desired trans group or a carboxyl group of the compound (B) as described below. The compound (acid dissociable functional group introducing reagent) for introducing an acid dissociable functional group can be synthesized or easily obtained by a known method, and examples thereof include an active carboxylic acid derivative compound such as hydrazine halide, acid field, and monocarbonate, and an alkane. The group halide, vinyl alkyl ether, dihydr〇pyrane, alkyl halocarboxylate or the like is not particularly limited. For example, in the case of acetone, tetrahydrofuran ('THF), propylene glycol monoterpene, the compound (8) is dissolved or suspended. Next, a vinyl alkyl ether such as ethyl vinyl ether or dihydropyran is added, and the reaction is carried out at normal pressure at 20 C to 60 C for 6 hours in the presence of an acid catalyst such as pyridinium sulfonate. 72 hours. Then, the reaction mixture is neutralized with an organic compound, and then added to the steaming water to precipitate a white solid. Then, the separated white g body is washed with steamed water and dried to obtain a compound (A). Further, in the aprotic solvent such as propylene, THF or propylene glycol monoacetic acid vinegar, the compound (B) is transferred or floated, and the ethyl chloroform or the like is added. Fund·Base material minus acid burning, in the presence of potassium carbonate, etc., in the presence of __, f pressure, grab ~ 110C reaction 6 〜 ~ 72 hours. Then, the reaction liquid was precipitated with an acid such as hydrochloric acid 28 201131300 ', and then dried to obtain a neutralization. Then, the white solid separated in distilled water was added to wash the compound (A) in distilled water. Ϊ Ϊ is a compound of two or more aromatic compounds (A11). The solubility of the cyclic compound obtained by the aromatic compound (A11)' in the +-conductor safe solvent is improved. The compound represented by the above formula (1A) has a molecular weight of 99 () to 29 Å, preferably 1040 to 2650, more preferably 1 〇 8 〇 to 24 Å, and particularly preferably 5% to 2,200. The compound represented by the above formula (1B) has a molecular weight of 诵, preferably 840 to 1,750, more preferably 88 to 15 (8), still more preferably 95 to 1300. In the case of the upper wire, the lens maintains the necessary properties and has heat resistance. The compound (4) represented by the above formula (1A) is preferably a compound represented by the following formula (2A). [化15]

(2 A) 29 201131300 4 i is a nitrogen atom or a commercial atom, an integer called b + , and mi + m2 = 4HR4 is the acid dissociable functional group ^ is the same as above. The compound (A) represented by the above (1A) is more preferably a compound represented by the following formula (3A). [Chemistry 16]

(3 A) In the mountain (Formula A), R2 is a 1-substituted thiol group selected from a carbon number of 2 to 20, a 1_substituted ethyl group having a carbon number of 3 to 20, and a carbon number of 4 to 2 Å. a propyl group, a 1-branched alkyl group having a carbon number of 3. to 20, a decyl group having 1 to 2 carbon atoms, a fluorenyl group having 2 to 2 carbon atoms, and a fluorene-substituted alkoxyalkyl group having 2 to 2 carbon atoms. Acid dissociable functional group in the group consisting of a cyclic ether group having 2 to 2 carbon atoms, an alkoxycarbonyl group having 2 to 2 carbon atoms, and an alkoxycarbonylalkyl group, X, mi, m2 , R4, P are the same as above. The compound (A) represented by the above formula (1A) is particularly preferably a compound represented by the formula (4A) in 201131300. [Π化]

(4A) (In the formula (4A), R2, R4, and p are the same as those described above.) The compound (A) represented by the above formula (1A) is particularly preferably a compound represented by the following formula (5A). [Chem. 18]

In the formula (5A), R2 is the same as the above. The compound (B) represented by the above formula (1B) is a compound represented by the formula (2B). [Chem. 19]

(2B) (In the formula (2B), X is a hydrogen atom or a halogen atom, an integer called ι 4 ' m2 is an integer of 〇~3, mi + m2 = 4, ^ is the same.) p one upper: more preferably The compound represented by the formula (3B) represented by the above formula (IB) can be mentioned. [化 20] 32 201131300

(3B) In the formula (3B), mi'R4 is the same as the above. The compound (B) represented by the above formula (1B) is preferably a compound represented by the following formula (4B). [Chem. 21]

(4B) 33 20113130〇 (In the formula (4B), R4 and p are the same as above.) 歹1J is represented by the compound (B) represented by the above formula (1B), represented by the formula (5B) compound of. For [22]

The above compound (A) has high heat resistance, and has::::r does not have sublimation property, and it is suitable for the development of the resistive material, particularly the optical material, and in terms of manufacturing, The various kinds of industrially produced secrets are represented by various kinds of _ 赖 n 邻 三 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The reaction is produced in a high yield, so that the practicality is extremely squeaky. The compound (8) has high heat resistance and is amorphous, so that == different, no sublimation property, solubility of the test developer, and resistance to impurities Excellent, suitable (four) for the light material, especially the main component of the light kaki material 34 201131300 points (substrate). In addition, in terms of manufacturing, it is also possible to achieve high yields by using various non-metals such as bis-benzene and phthalate, which are represented by industrial acid groups. It is manufactured, so it is extremely excellent. The I reaction can be purified by observing the residual metal amount of the compound (A) or the compound (8). In addition, if the acid catalyst remains, the storage stability of the positive type residue == is generally lowered, or if the silkiness of the radiation-retaining composition of the test catalyst remains decreased, it is also possible to purify the compound as long as the compound (a) or a compound, the purification can be carried out by a known method, and there is no particular ('Audio, green, (4) water = too, a method of washing an aqueous solution, a method of treating with an ion exchange resin, and (4) f The column chromatography method is used for the treatment, etc. The pure 2 method is more preferably carried out by combining two or more kinds of the acidic acid solution, the aqueous solution, the material, the metal, the acidic compound and/or the testability. The amount of the compound is determined; the optimum method is appropriately selected by removing the surface of the purified dissolution inhibitor, etc. Example 1 'Acid aqueous solution may be a hydrochloric acid or a nitric acid m solution having a concentration of 0 01 mol/L to lo m〇i/L. The aqueous solution of neonate can have an aqueous ammonia solution having a concentration of 001 μl/I^~l〇_/L, and examples of the ion exchange resin include a cation exchange resin, for example, Ambedyst 15J-HG Dry manufactured by Organo, etc. It can be dried after purification. Drying can be known The method is carried out, and the helmet is particularly limited to a method of riding a vacuum lining or a lining under the condition that the compound (A) or the compound (8) is not modified by 35 201131300. The compound (A) and the compound (8) of the invention towel are: !'1 is a structure or a mixture. It is used as a material for sensing 2 m, and only has two structures in the _ body and the trans body: "chemical" becomes a pure substance compound, and the photoresist film is obtained only in the film. The method of having a %-form compound of any of cis and trans is possible by using column chromatography or ==;: reaction solvent at the time of production, and reaction temperature, etc. The glass transition temperature of (A) and compound (8) is preferably 100 C or more, more preferably 12 (rc or more, and particularly preferably 14 〇. 〇 or more, particularly preferably 15 (TC or more.) In the case of semiconductor lithography, it has a resistance to patterning, and can impart high resolution and the like. "' The compound (A) and the compound (8) in the present invention have a glass spear temperature* The difference in the amount of heat generated by the differential sweep analysis is preferably J at 2〇jr/g. The crystallization temperature) _ (glass transition temperature) is preferably 70 Å (J or more, more preferably 8 (rc or more, particularly preferably l 〇 (rc or more, particularly preferably 130 c or more. If the crystallization heat amount is less than 2) When 〇j/g or (crystallization degree μ)_(glass transition temperature) is within the above range, an amorphous film can be easily formed by spin coating the sensitized radioactive composition, and film formation necessary for photoresist In the present invention, the crystallization heat generation, the crystallization temperature, and the glass transition temperature can be measured by DSC/TA_5〇ws manufactured by Shimadzu Corporation, and by the following method: 36 201131300t by measurement and differential scanning Calculated by heat analysis. Approximately 1 〇mg of the sample was placed in an aluminum unsealed container and heated to a temperature above the melting point at a temperature rise rate of 20 ° C / min in a nitrogen stream (5 〇 ml / min). After quenching, the temperature was raised to a temperature above the melting point at a temperature increase rate of 2 (rc/min) in a nitrogen stream (30 ml/miii), and then quenched again, and again at a temperature increase rate of 20 ° C in a nitrogen stream (3 〇 ml/min). /mm is raised to 400 ° C. The temperature at the midpoint of the region where the discontinuous portion appears on the baseline (where the specific heat changes to half) is taken as the glass transition temperature (Tg) ' and the temperature of the heat generation peak appearing thereafter is taken as the crystal The calorific value is determined as the crystallization heat amount based on the area of the region surrounded by the heat peak and the baseline. The compound (A) and the compound (B) are preferably at most 〇〇〇c under normal pressure. Preferably, it is 120 〇C or less, more preferably 13 〇. 〇 below, especially preferably below i4 〇 ° C, particularly preferably below 150 ° C, low sublimation. The so-called sublimation is low, preferably in the heat weight In the analysis, the weight loss when kept at a predetermined temperature for 1 minute is 10%, preferably 5%, more preferably 3%, particularly preferably 1%, particularly preferably 0.1% or less. Due to low sublimation, Prevents contamination of the exposure device caused by external air during exposure. In addition, low line edge roughness can be achieved Line edge roughness ' LER) provides a good pattern shape. Compound (A) and compound (B) preferably satisfy f < 3. 〇 (F represents total number of atoms / (total number of carbon atoms - total number of oxygen atoms)), More preferably, F < 2_5 is satisfied. The dry etching resistance is excellent by satisfying the above conditions. The compound (A) and the compound (B) are selected from propylene glycol monomethyl ether acetate (PGMEA). > Pr〇pylene glycol monomethyl ether, 37 201131300 PGME ), cyclohexanone (CHN ), cyclopentanone (CPN), 2-heptanone, benzoquinone, acetic acid Among the butyl ester, the propionic acid, and the ethyl lactate, and the solvent which exhibits the highest solubility to the compound (A) and the compound (B), it is preferably dissolved at 23 C. 1 wt% or more, more preferably 5 wt% or more, and particularly preferably 10 wt% or more, particularly preferably selected from the group consisting of pGMea, PGME, and CHN, and exhibits the highest dissolution of the compound (A) and the compound (B). The solvent in the capacity 'dissolves at 20 wt% or more at 23 ° C. By satisfying the above It can be used in a semiconductor manufacturing step in actual production, and the storage stability is also good. 4 The phenolic hydroxyl group and/or carboxyl group of the compound (B) can be at least in a range not impairing the effects of the present invention. The introduction of a non-acid dissociable functional group to a non-acid dissociable functional group means that the characteristic group which does not cleave in the presence of an acid and which does not generate an alkali-soluble group is, for example, selected from those which are not decomposed by the action of an acid. C1~2〇 alkyl group, C3~2〇 cycloalkyl group, :20 aryl group, cl~2〇 alkoxy group, cyano group, nitro group, hydroxyl group, hetero group, group, _ atom, county, a functional group such as a group consisting of a silk group having α 2 〇 2 、, a derivative of these groups, and the like. / The above compound (Α) and the compound (Β) can be formed into an amorphous film by a spin coating method. In addition, the usual semiconductor manufacturing process can be fulfilled. The positive-type radioactive composition of the present invention can be opened into an amorphous film by a spin coating method. Rotating and coating the present invention with a positive-type radioactive domain to open /see, j\3 = the melting rate of the crystal film to the 2.38 wt% #ΤΜΑΗ aqueous solution at 23 ° C is preferably 5 A/Sec or less, more preferably 0 05 A/sec~5 people/5 38 201131300 ^o/iypif Good for 0.0005 A/sec~5 people/: sec ° a, if the dissolution rate is 5 people/sec or less, = dissolve in ^ development, can As a touch. Further, when the amorphous film is thinner than 5 A/see and the solution speed, it is difficult to improve the resolution. The reason for this is that the contrast of the solubility change before and after the exposure of the cyclic compound to the interface between the unexposed portion of the secret developer sheet and the exposed portion in the non-experimentable developer becomes large. In addition, it has a reduction in LER and a reduction in defects. /', the portion of the amorphous film formed by spin-coating the solid content of the positive-type radioactive composition of the present invention exposed by radiation such as KrF excimer laser, extreme ultraviolet ray, electron beam or X-ray is under 23π For 2 38 wt〇/. The dissolution rate of the TMAH aqueous solution is preferably 1 〇A/sec or more, more preferably *10 human/sec to 10,000 human/sec', and particularly preferably 1 〇〇 person/sec to 1 〇〇〇 person/sec. When the dissolution rate is 10 people/sec or more, it can be dissolved in an alkaline developing solution to form a photoresist. Further, if the exposed portion has a dissolution rate of 1 000 000 /sec or less, the resolution may be improved. It is presumed that the reason is that the minute surface portion of the above cyclic compound is dissolved to lower the LER. In addition, it has the effect of reducing defects. The positive-type radioactive composition of the present invention comprises 1 wt% to 80 wt% of a solid component and 20 wt% to 99 wt% of a solvent. Preferably, it is 1 wt% to 5 wt% of the solid component and 50 wt% to 99 wt% of the solvent, particularly preferably 2 wt% to 40 wt% of the solid component and 60 wt% to 98 wt% of the solvent, Preferably, the solid component is 2 wt% to 1 wt% and the solvent is 90 wt% to 98 wt%. The sum of the weight of the above compound (A) and the weight of the compound (B) is 39 201131300. The total weight of the body component is from 50% by weight to 99% by weight, preferably from 65% by weight to 8% by weight, more preferably from 60% by weight to 70% by weight. If the ratio is the above, a high resolution is obtained and the line edge roughness becomes small. The acid generator (C) is preferably at least one selected from the group consisting of compounds represented by the following formulas (7-丨) to (7_8).

(r~i) (in the formula (7-1), they may be the same or different', respectively, independently, a straight-chain, branched or cyclic alkyl group, linear, branched or % alkoxy a sulfonic acid ion halide ion having an alkyl group, an aryl group, a halogen-substituted alkyl group or a halogen-substituted aryl group.) / the above formula (7-1) The compound to be represented is preferably at least one selected from the group consisting of triphenyl sulfonium trifluoromethane sulfonate, triphenylsulfonium trifluoromethane sulfonate, triphenylsulfonium hexafluoro-n-butanesulfonate, Diphenyl phenyl phenyl hexafluoro-n-butane sulfonate, 201131300 t phenyl porphyrin I-n-octylate, tri-phenyl-4-pyrylphenyl sulphate, acid salt: two, 4 ,6·trimethylphenyl sulfonate, diphenyl-wood, butoxybenzene, trifluoromethane, diphenyl _4_t-butoxy quinone - n-butyl sulfonate, diphenyl _ 4 hydroxyphenyl fluorene trifluorosulfonate, bis (4-IL phenyl) _ 4 _ phenyl phenyl l trifluoromethane, diphenyl Base I hydroxyphenyl quinone nonafluoro-n-butyl sulfonate, (4-hydroxyphenyl)-phenylindole trifluorodecanoate, bis(4-decyloxyphenyl)phosphonium trifluorosulfonate, tris(4-fluorophenyl)phosphonium difluorosulfonate Salt, triphenylsulfonium p-toluenesulfonate, triphenylsulfonate, benzyl-2,4,6-trimethylphenyl-p-benzoate, diphenyl- 2,4,6-Dimethylphenyl- 2,3-trifluorodecyl benzoate, diphenyl 2,4,6-diindole, fluorenyl-4-trifluoro-t-benzenesulfonate , diphenyl-2,7-tris(trimethylphenyl)-2,4-difluorobenzenesulfonate, diphenyl-2,4,6-tridecylphenylphosphonium hexafluoroate Diphenylnaphthyl triflate, diphenyl-4-phenylphenyl-p-toluenesulfonate, triphenyl sulfonium 10-camphor sulfonate ), diphenyl-4-hydroxyphenyl铳ι〇_ camphorsulfonate and cyclo(1,3-perfluoropropanedisulfonate) quinone. [Chem. 24]

(In the formula (7-2), 'R14' may be the same or different, and independently, Table 41 201131300 is a hydrogen atom, a linear chain, a branched or a cyclic alkyl group, a linear chain, a branched form or a % alkoxy group. The hydroxy or dentate atom ^ x- is the same as above.) The compound represented by the above formula (7-2) is preferably at least one selected from the group consisting of bis(4_third τ group)镊)trifluoro(tetra) acid salt, bis(4_t-butylphenyl)-locked nine-n-butyl acid salt, bis(4·t-butylphenyl)anthene gas _ n-octylate, double &Third butyl oxime p-toluene, acid salt, bis(4_t-butylphenyl) hexanoate, bis(heart butyl phenyl) 鎭 2 · trifluoromethyl benzene sulfonate Acid salt, bis(4_t-butyl)phosphonium-4-trifluoromethylbenzenesulfonate, bis(4_t-butylphenyl oxime bis-benzoate, bis(tetra)butane Pyrene hexafluorobenzene salt, bis: ^dibutylphenyl) 镝10_樟 cerebral acid salt, diphenyl fluorene trifluoromethane, 'phenyl quinone nonafluoro-n-butyl sulphate, diphenyl Base town perfluoro-n-octanoic acid|, monophenylphosphonium p-toluenesulfonate, diphenylsulfonium benzenesulfonate, two towns 10-樟顾盐, Diphenyl鎭_2_trifluoromethylbenzene continuation of di-yl t-trifluoromethyl phthalate, di-ply-end 2,4_di-benzene;; Liudun benzoate, bis(4-trifluorodecylphenyl) cone tristearate, bis(4.trifluoromethylphenyl)phosphonium hexafluoride, n-butyric acid I bis: benzophenone Perfluoro-n-octanesulfonate (tetra), di(4)trifluoromethylphenyl) Town = the present salt, bis(tetrakis(trifluoromethyl)phenyl sulfonium salt and bis(4)tris-nonylphenyl)anthracene 10-camphorsulfonate. - both [Chem. 25] 42 201131300 •30/ 丄ypif Ο

(7-3) (In the formula (7-3), Q is an alkylene group, an aryl group or an alkoxy group, and R15 is an alkyl group, an aryl group, a carboxylic acid-substituted alkyl group or a halogen-substituted aromatic group. The compound represented by the above formula (7-3) is preferably at least one selected from the group consisting of N-(trifluoromethylsulfonyloxy) amber imine, N -(Trifluoromethylcansyloxy)phthalic imine, N-(trifluoromethylsulfonyloxy)diphenylbutylimide, N-(trifluoromethyl) Biphenyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarbenylimine, N-(trifluoromethylsulfonyloxy)naphthylimine, N- (l〇- camphorsulfonyloxy) amber imine, N-( 10-camphorsulfonyloxy) phthalimide, N-(10-camphorsulfonyloxy)diphenyl Cis-butenylene diimine, N_(1〇_ camphorsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-di-rebel with imine, N-(10-camphor Sulfhydryloxy)naphthylimine, N_(n-octylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyindenine, N-(n-octane) Mercaptooxy) carbamic acid imine, N-(p-toluenesulfonyl) Bicyclo[2.2.1]hept-5-ene-2,3-dicarboxy quinone imine, N_(p-phenylenesulfonyloxy)naphthyl quinone imine, N-(2-trifluorodecyl) Phenylsulfonyloxy)bicyclo[2 21]hept-5-ene-2,3-dicarboxy S&imine, Ν-(2-trifluorodecylbenzenesulfonyloxy)naphthylquinoneimine , N_(4_ bis-decyl phenylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyfluorene 43

X 201131300 Imine, team (4-difluorodecylbenzene hydrazinyloxy)naphthyl quinone imine, (perfluorobenzene succinyloxy)bicyclo[2.2.1]hept-5-ene-2, 3-dicarboxy quinone imine, N-(perfluorobenzenesulfonyloxy)naphthyl quinone imine, Ν_(1_naphthalenesulfonyloxy)bicyclo[2.2.1]hept-5-ene~2 , 3_dicarboxylic acid imine, N-(l-naphthalenesulfonyloxy)naphthylimine, fluorene-(nonafluoro-n-butylsulfonyloxy)bicyclo[2.2.1]heptene- 2,3-Dicarboxy quinone imine, Ν_(nonafluoro-n-butylsulfonyloxy)naphthyl quinone imine, Ν-(perfluoro·n-octylsulfonyloxy)bicyclo[2 2丨]g _5_ dilute, 2, dicarboxy quinone imine and Ν-(perfluoro-n-octylsulfonyloxy) naphthyl quinone imine. [Chem. 26]

V \J 0 0

R16—S—I~~R16 II II (7 — 4) (In the formula (7-4), Ri6 may be the same or different, and each independently is an optionally substituted linear, branched or cyclic alkyl group. Any optionally substituted aryl group, optionally substituted heteroaryl group or optionally substituted aralkyl group.) The compound represented by the above formula (7-4) is preferably at least one selected from the group consisting of the following compounds. : diphenyl disulfone, bis(4-methylphenyl)disulfone, dinaphthyl disulfone, bis(4_t-butylphenyl)disulfone, bis(4-hydroxyphenyl) Disulfone, bis(3-hydroxynaphthyl) diruthenium, bis(4-fluorophenyl)disulfone, bis(2-fluorophenyl)disulfone, and bis(4-trifluoromethylphenyl)diamine . [化27] 201131300

(In the formula (7-5), R17 may be the same or different, and each independently is an optionally substituted linear, branched or cyclic alkyl group, an optionally substituted aryl group, an optionally substituted heteroaryl group or optionally The substituted aralkyl group.) The compound represented by the above formula (7-5) is preferably at least one selected from the group consisting of α-(fluorenylsulfonyloxyimino)- A-(methyl sulfonyloxy imino)-phenyl acetonitrile, a-(methyl sulfonyloxyimino)-4-methylsulfonyloxy imino-4-methoxy Phenyl acetonitrile), a-(trifluoromethyl sulfonyloxy imino)-phenylacetonitrile, a-(trifluoromethylsulfonyloxy) A-(trifluoromethyl sulfonyloxy imino)-4-methoxy phenyl acetonitrile, a-(ethyl-retrienyloxyimino)-4-methoxyphenyl Acetonitrile (a-(ethyl sulfonyloxy imino)-4-methoxy phenyl acetonitrile), a-(propylsulfonyloxyimino)-4-mercaptophenylacetonitrile (a-(propyl sul) Fonyloxy imino)-4-methyl phenyl acetonitrile) and a-(methyl sulfonyloxy imino)-4-bromophenyl acetonitrile ° [化28 ] 45 201131300 JU / i ^pif

In the formula (7-6), R18 may be the same or different and each independently is a halogenated group having one or more chlorine atoms and one or more desert atoms. The halogenated alkyl group preferably has 1 to 5 carbon atoms. [化29]

(7-7)

Γ19 €—Υ19 丄ΊΟ [Chem. 30]

(7-8)

46 201131300 In the formulae (7-7) and (7-8), R19 and R20 are each independently an alkyl group having 1 to 3 carbon atoms such as a mercapto group, an ethyl group, a n-propyl group or an isopropyl group, and a cyclopentyl group. a cycloalkyl group such as a cyclohexyl group, an alkoxy group having 1 to 3 carbon atoms such as a decyloxy group, an ethoxy group or a propoxy group, or an aryl group such as a phenyl group, an anthranilyl group or a naphthyl group, preferably An aryl group having 6 to 10 carbon atoms. L19 and L2G are each independently an organic group having 1,2-naphthoquinonediazido. Specific examples of the organic group having an I,2-naphthoquinonediazide group include anthracene, 2-naphthoquinonediazide-4-sulfonyl group, iota, 2-naphthoquinonediazide-5-sulfonyl group, anthracene 1,2-naphthoquinonediazide-6-sulfonyl and the like iota, 2-quinonediazidesulfonyl group as a preferred organic group. Particularly preferred are 1,2-naphthalene 1 diazide _4_ contiguous fluorenyl and hydrazine, 2_naphthoquinonediazide_5_ scutane. p is an integer from 1 to 3, q is an integer from 〇 to 4, and is +. J19 is a single bond, a polymethylene group having a carbon number of 1 to 4, a cycloalkyl group, a phenylene group, a group represented by the following formula (7-7-1), an ester group, an anthranyl group or The ether group, Y19 is a hydrogen atom, an alkyl group or an aryl group, and the oxime 20 is independently a group represented by the following formula (7-8-1). [化31]

[化32] 201131300

(In the formula (7-8-1), Z22 is independently an alkyl group, a cycloalkyl group or an aryl group, R22 is an alkyl group, a cycloalkyl group or an alkoxy group, and r is an integer of 〇~3.) Others The acid generator may, for example, be bis(p-toluene sulfonyl)diazomethane or bis(2,4-dimercaptophenylsulfonyl)diazepine, Bis(tert-butylsulfonyl)diazononane, bis(n-butylsulfonyl)diazononane, bis(isobutylsulfonyl)diazomethane, bis(isopropylstone xanthine) Gas smoldering, bis(n-propyl hydrazino)diazepine, bis(cyclohexylsulfonyl)diazononane, bis(isopropylsulfonyl)diazononane, 1,3-double (cyclohexyl sulfonyl azomethyl sulfonyl propane), 1,4-bis(phenyl fluorenyl azo sulfonyl sulfonyl) Butane, 1,6-bis(phenylsulfonylazomethylsulfonyl)hexane, 1,10-bis(cyclohexylsulfonylazomethylsulfonyl)decane, etc. Base heavy nitrogen methane; 2-(4-decyloxyphenyl)-4,6-(bistrichloromethyl)-1,3,5-tris(2-(4-methoxyphenyl)-4, 6-(bis- Trichloromethyl)-l,3,5-triazine), 2-(4-decyloxynaphthyl)-4,6-(bistrichloroindenyl)-l,3,5-triazine (2-(4- Methoxy naphthyl)-4,6-(bis-trichloromethyl)-l,3,5-triazine), three (2,3- 48 201131300f j〇/iypii II) odor propyl-1,3,5- Halogen-containing (tris(2,3-dibromopropyl)-l,3,5-triazine), tris(2,3-dibromopropyl)isocyanurate (tris(2,3-dibromopropyl)isocyanurate) Triterpenoid derivatives, etc. The acid generator is preferably an acid generator having an aromatic ring, and more preferably an acid generator represented by the formula (7-1) or (7-2). It is especially preferred that the oxime of the formula (n) or (7-2)-acid generator having a sulfonic acid ion containing an aryl group or a halogen-substituted aryl group is particularly preferably an acid generator having a sulfonic acid ion containing an aryl group. Particularly preferred is diphenyltrimethylphenyl sulfonium benzoate, triphenylsulfonium terephthalate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium hexafluoroantimonate Succinic acid. Ler can be lowered by using the acid generator. The above acid generator (C) may be used singly or in combination of two or more. In the present invention, the radioactive composition of the scatter control side (Ε) can be used to control the diffusion of the acid generated by the acid generator by radiation irradiation to prevent the poor chemical reaction of the unexposed domain. In. By using such an acid residue (8), the storage stability of the radiation-sensitive composition is excellent. Material, * only the resolution is improved, and it is possible to suppress the change of the post-exposure time before the electron beam irradiation and the exposure time after the electron beam irradiation! The line width of the raised photoresist pattern changes to become a very sinister composition. _ Acid Diffusion Control Agent (Ε) Wei Atomic Compound, Detective Circumstance, Face 鐄 Electron beam radiolysis decomposable compound. The acid diffusion controlling agent may be used alone or in combination of two or more. The above acid diffusion control #_, for example, discloses a nitrogen-containing compound, or an organic compound which is decomposed by exposure by 49 201131300. The nitrogen-containing organic compound is exemplified by the following formula (10): 化61 R62', r (10) (hereinafter referred to as "nitrogen-containing compound (1)"), and the same a diamine compound having two nitrogen atoms in the molecule (hereinafter referred to as "nitrogen-containing compound (II)"), a polyamine compound or a polymer having three or more nitrogen atoms (hereinafter referred to as "nitrogen-containing compound (111) ))), a compound containing a brewing amine group, a urea compound, and a nitrogen-containing heterocyclic compound. Further, the above acid diffusion (tetra) agent may be used singly or in combination of two or more. In the above formula (10), R61, r62 and R63 each independently represent a hydrogen atom, a linear, branched or cyclic alkyl group, an aryl group or an aralkyl group. Further, the above-mentioned alkyl group, aryl group or aryl group may be unsubstituted, and may be substituted with another functional group such as a group. Here, the above-mentioned linear or branched calcining group may, for example, be a carbon-based group, and may be a group of (7), and examples thereof include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, and a n-butyl group. Base, j group, second butyl, tert-butyl, n-pentyl, neopentyl, n-hexyl, di-f-yl-2-thezyl, n-heptyl, n-octyl, n-ethyl Beauty, 壬基基, 正癸基, etc. Further, the aryl group may be a group having a carbon number of 6 to 12 Å. Specific examples thereof include a phenyl group, a f phenyl group, a xylyl group, a lining 50 201131300, a JU/iypil (ciimeny), a _naphthyl group and the like. Further, the upper and lower parts of the genus wu include the sulfhydryl group, the fluorenyl group, the basic ethyl group (Phenethyi), and the naphthyl group. The above nitrogen-containing compound (1) specifically includes, for example, an amine such as an amine, n-heptylamine, n-octylamine, n-decylamine, n-decylamine, n-alkylamine or cyclohexylamine. Alkylamine; di-n-butyldi-n-ylamine, di-n-hexylamine, di-n-heptylamine, di-n-octyl hydrazine, diterpene L-n-decylamine, methyl-n-dodecylamine, Di-n-decyl fluorenyl, cyclohexylmethylamine, dicyclohexylamine oxime-alumina diethylamine, di-n-propylamine, tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine, Tri-n-heptylamine, tri-n-octylamine, tri-n-decylamine, tri-n-n-ylamine, monodecyl-d-dodecylamine, di-n-dodecylmethylamine, dicyclohexyldecylamine ditricyclohexyl Tri(cyclo)alkylamines such as amines; monoethanolamines: alkanolamines such as diethanolamine and triethanolamine; aniline, N-mercaptoaniline, n, n-diphenylaniline, 2-mercaptoaniline, 3_曱An aromatic amine such as a aniline, a 4-methylamine, a 4-phenylamine, a diphenylamine, a tris-amine or a naphthylamine. Specifically, the above-mentioned nitrogen-containing compound (II) may, for example, be a female, Ν, Ν, Ν, Ν'-west methylethylenediamine, n, n, N', N'-tetra (2_ Hydroxypropyl) ethylenediamine, tetradecyldiamine, hexamethylenediamine, 4,4L diaminodiphenyl fluorene, 4,4·-diaminodiphenyl ether, 4,4 '_Diaminobenzophenone, 4,4,-diaminodiphenylamine, 2,2-bis(4-aminophenyl)propane, 2-( 3-aminophenyl)-2-(4-aminophenyl)propane, 2-(4-aminophenyl)-2-(3-hydroxyphenyl)propane, 2-(4-amino group Stupid 51 201131300 base)-2-(4-hydroxyphenyl)propane, 1,4-bis[1-(4-aminophenyl) benzhydrinylethyl]benzene, 1,3-bis[1-( 4-aminophenyl)-1-indenylethyl]benzene and the like. Specific examples of the nitrogen-containing compound (III) include a polymer of a polyethylenimine, a polypropylamine, and an N-(2-didecylaminoethyl)glycolamide. Specific examples of the above-mentioned mercapto group-containing compound include, for example, formamide, N-methyl formamide, and N,N-dimethylformamide (Ν,Ν). -dimethyl formamide ), acetamide, N-methyl acetamide, N,N-dimethylacetamide, propionamide ), benzamide, pyrrolidone, N-methyl pyrrolidone, and the like. Specific examples of the urea compound include urea, methyl urea, 1,1-dimercaptourea, 1,3-dimercaptourea, ι, ι, 3,3-tetradecyl. Urea, 1,3-diphenylurea, tri-n-butylthiourea, and the like. Specific examples of the above nitrogen-containing heterocyclic compound include: imidazole, benzimiazole, 4-methyl imidazole, 4-mercapto-2- Imidazoles such as 4-methyl-2-phenyl imidazole and 2-phenyl benzimidazole; pyridine and 2-methyl pyridine , 4-methyl pyridine, 2-ethyl pyridine, 4-ethyl pyridine, 2-phenyl pyridine, 4 -Phenylpyridin 52 201131300 (4_phenyl pyridine ), 2-methyl-4-phenyl pyridine, nicotine, nicotinic acid, final acid Nicotinic acid amide, quinoline, 8-oxyquinoline, acridine, etc. Pyrazine, ° pyrazole, sputum. Pyridazine, quinoxaline, purine, pyrrolidine, piperidine, morpholine, 4-methyl morpholine, piperazine Piperazine, 1,4-dimethyl piperazine, 1,4-diazabicyclo[2.2.2]octane (l,4-diazabicyclo[2.2.2]octane )Wait. Further, the above-mentioned test compound which is decomposed by exposure can be exemplified by the following general formula (11-1): [Chem. 34]

(1 1 - 1) The performance compound expressed, and the following general formula (11-2): 53 201131300

Hb 35]

The hydrazine compound and the like are represented. In the above formulae (11-1) and (11-2), 71 and R independently of each other represent a hydrogen atom, a carbon number of a burnt group, a carbon number of 1 to 6 alkoxy group, a meridine or a functional group atom. 2• represents H〇, rc〇〇_ (wherein, 11 represents a filament of carbon number 6, an aryl group having a carbon number or an alkaryl group having a carbon number of 1 to 6) or a formula of the following formula: ] ^

The anion indicated. Specific examples of the basic compound decomposed by exposure include triphenylsulfonium hydroxide, triphenyl hydroxyacetate, triphenylhydrosalicylate, and diphenyl-4-phenylphenyl. Oxide, diphenyl winter wartene 54 201131300 j〇/iypif based acetate, diphenyl-4-phenylphenyl hydrophobic salicylate, bis(4-t-butylphenyl)hydrazine Oxide, bis(4_t-butylphenyl)phosphonium acetate, bis(4-t-butylphenyl)phosphonium oxynitride, bis(4-t-butylphenyl)phosphonium acetate, double (4-tert-butylphenyl)hydrazine salicylate, 4-tert-butylphenyl-4-hydroxyphenylhydrazine hydroxide, 4-tert-butylphenyl-4-hydroxyphenylhydrazine Acetate, 4-tert-butylphenyl-4-perphenylphenyl salicylate, and the like. The amount of the acid diffusion controlling agent (E) is preferably 0.001 wt% to 50 wt%, more preferably o.ooi wt% to 1 wt%, and particularly preferably 0.001 wt% to 5 wt%, based on the total weight of the solid component. , especially good for o.ooi wt% ~ 3 wt%. If it is within the above range, it is possible to prevent degradation of the resolution, pattern shape, and deterioration in +. Further, even if the exposure time after exposure from the electron beam irradiation to 丄 = heat becomes long, the shape of the upper layer portion of the pattern is not deteriorated. In addition, when the blending amount is 1 Gwt% or less, it is possible to prevent a decrease in sensitivity or developability of an unexposed portion. In addition, by using such acid diffusion control, the composition of the product is improved, and the second analysis is performed, and the photoresist Q caused by the change of the standing time after the exposure of the radiation == can be suppressed. The line width of the case has become the ultimate goal of process stability. 3 = positive-type radioactive composition, which can be used as a second agent, a sensory agent, a surfactant, and various additives such as organic carboxylic acid or gossip. s Wei or its derivatives (1) dissolve and promote the above-mentioned species as other components (7). The low-molecular-weight dissolution promoter is a solution to the developer of the photoresist substrate, such as the solution of the film, and the low-yield condition of the film, which has an increase in the solubility and an increase in the dissolution rate of the ring-shaped compound. It can be used without affecting the performance of this issue. The above-mentioned transfer promotion is exemplified by a low molecular weight phenolic compound, and examples thereof include bisphenols and tris. These dissolution promoters may be used singly or in combination. The dissolution promotion_wei amount is appropriately adjusted depending on the type of the photoresist substrate to be produced, but is referred to as a photoresist substrate (R) with respect to the photoresist substrate (compound (4) and compound jB). The parts by weight are preferably 10,000 parts by weight, more preferably 3% by weight, more preferably 10,000 parts by weight, more preferably 〜2 parts by weight. [2] Dissolution control agent The psycholysis control agent is a component which has a function of controlling the solubility in the case where the solubility of the resist substrate is too high in the developer such as alkali to moderately decrease the dissolution rate during development. Such a transfer control is preferably a dissolution control agent which does not chemically change in the step of "radiation irradiation, development, etc." in the forging of the silk film. Soluble, the preparation can be exemplified by: naphthalene, phenanthrene, anthracene, anthracene (acenaphthene), aromatic known * work class 'benzine _ (such as phen〇ne), benzophenone, phenyl, phenyl, etc.; methylbenzene Stone winds such as base stone, diphenyl hydrazine, and dinaphthyl maple. Some of the dissolution controlling agents may be used singly or in combination of two or more. The amount of the <controlling agent is appropriately adjusted depending on the type of the resist substrate (R) used, but is preferably 0 parts by weight to 1 part by weight relative to the resist substrate (R) 100 parts by weight. The 〇 part by weight, more preferably 〇 part by weight 〜 〇 〇 ' 更 更 更 更 更 更 更 更 更 更 更 更 更 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 。 。 56 201131300 [3] The sensitizer sensitizer is a component that transmits the energy of the radiation irradiated by the nuclear to the acid generator (〇, thereby increasing the amount of acid generated = the surface of the photoresist is improved by the honour. Such sensitizers can be used, for example, benzophenones, biacetyls, phenphenes, phenothiazines, and nyms. These sensitizers can be used alone. Or, the amount of the two types to be used is appropriately adjusted according to the kind of the resist substrate (R) to be used, but is 重量 θ θ by weight with respect to the silk substrate (R), preferably 〇 by weight B 100 by weight. Preferably, it is 0 parts by weight to 10 parts by weight, more preferably 10 parts by weight, particularly preferably 0 parts by weight to 2 parts by weight. [4] Interfacial activity ij The surfactant is a positive radiation having the same type of radiation to the present invention. A component that improves the applicability, streaks, and developability of the photoresist, etc. The surfactant may be any of an anionic, cationic, nonionic, or amphoteric. The agent is a non-ionic surfactant. Non-ionic surfactants and The affinity for the solvent for producing the radiation-sensitive composition is good and more effective. Examples of the nonionic surfactant include polyoxyethylene higher alkyl ethers, polyoxyethylidene higher alkylphenyl bonds. For example, Eft〇p (manufactured by Jemc Co., Ltd.), Megafac (manufactured by Dainippon Ink Chemical Industry Co., Ltd.), and the like. Fiu〇rad (manufactured by Sumitomo Corporation), Aashi Guard, Surflon (manufactured by Asahi Glass Co., Ltd.), Pepol (manufactured by Toho Chemical Industry Co., Ltd.), KP (manufactured by Shin-Etsu Chemical Co., Ltd. 5 57 201131300 Industrial Co., Ltd.), P〇iyfl〇w The amount of the surfactant to be added is appropriately adjusted according to the kind of the resist substrate to be used, but is preferably 1 part by weight with respect to the resist substrate (R). Parts by weight to 100 parts by weight, more preferably 0 parts by weight to 3 parts by weight, still more preferably 0 parts by weight to part by weight, particularly preferably 0 parts by weight to 2 parts by weight. [5] Organic carboxylic acid or phosphorus containing Oxyacid or its derivative The prevention of luminosity deterioration or the improvement of the shape of the photoresist pattern, the stability after exposure, etc. may further include an organic carboxylic acid or an oxo acid of phosphorus or a derivative thereof as an optional component. Further, it may be used together with an acid diffusion controlling agent. It can also be used alone. The organic carboxylic acid is, for example, preferably malicie acid, citric acid, malic acid, succinic acid, benzoic acid, Salicylic acid, etc. Phosphorus oxyacids or derivatives thereof include phosphoric acid, di-n-butyl phosphate, diphenyl g-phosphate, etc., derivatives such as carboxylic acid or esters thereof, and phosphonic acid and phosphonic acid a derivative such as an ester or a di-n-butyl phosphonate, a phosphonic acid such as phenylphosphonic acid, diphenyl phosphonate or dibenzyl phosphonate or an ester thereof, phosphinic acid, phenylphosphinic acid, etc. Derivatives such as phosphinic acid and the like, and particularly preferred among these organic carboxylic acids are phosphonic acids. The organic carboxylic acid or the oxyacid of phosphorus or a derivative thereof may be used alone or in combination of two or more. The compounding amount of the organic carboxylic acid or phosphorus oxyacid or its derivative is appropriately adjusted depending on the kind of the resist substrate (R) to be used, but it is preferably 100 parts by weight based on the resist substrate (R). It is preferably 1 part by weight, more preferably 0 part by weight to 30 parts by weight, more preferably 〇 parts by weight to 58 201131300 10 heavy wounds, particularly preferably 〇 parts by weight to 2 parts by weight. [6] The above-mentioned dissolution controlling agent, sensitizing agent, surfactant, and other additives other than an organic acid or an acid or a derivative thereof, the radiation-sensitive composition of the present invention may not hinder the object of the present invention. In the range of the above, it is necessary to formulate the above-mentioned dissolution, and additives other than the surfactant, or two or two: for example, a dye, a smear, and a subsequent freshening. For example, when a dye or a pigment is blended, the latent image of the exposed portion can be visualized, and the bokeh of the % of exposure can be moderated. Further, when the auxiliary agent is blended, the adhesion to the substrate can be improved, which is preferable. Further, other additives may be mentioned as a halo preventing agent, a storage stabilizer, an antifoaming agent, a shape improving agent, etc., specifically, "T歹J 4 4 -4 4 - 曱 查 查 酮 ketone (4_hydr〇xy-4) , -methyl chalcone) and so on. The formulation of the positive-type radioactive composition of the present invention (compound (A) / compound (B) / acid generator (c) / acid diffusion controlling agent / other (F)) is based on the weight percent of the solid component Preferably, it is 1〇~49.989/50~89.989/0.001~39.99/0.01~39.999/0~39.989, more preferably 10~49.989/50~89_989/0.001~39.99/0.01~39.999/0~15, especially good for 12 ~35/60~70/10~25/0.01~3/0~1, especially good for 12.5~17.5/60~70/10~25/0.01~3/0. According to the above-mentioned blending, the properties such as sensitivity, resolution, and alkali developability are excellent. The positive-acting radioactive composition of the present invention is usually prepared by forming a homogeneous solution of 59 201131300 at the time of use, and then, if necessary, by using a dioxane or the like. For example, the agent, ethylene glycol, single positive and negative subtraction, 7 曰 ethyl alcohol, early diethyl ether acetate, single-burning squaring, _ class·^, single-n-butyl, acetic acid vinegar, etc. Alcohol two = B: alcohol;, second brewing, internal early transfer of acetaminophen, propionate, early B-acetic acid diol, single μ, B, propylene glycol, mono-n-acetic acid, vinegar, etc. Propylene glycol single test, propylene glycol single test, etc.; „ethers; lactic acid brewing, lactic acid ethyl vinegar, lactic acid n-propyl vinegar, 夂T酉, lactic acid, pentyl vinegar and other lactic acid vinegar; B = B ^ _ _, acetic acid is · ^ ' acetic acid is the purpose of the purpose, acetic acid is the purpose of the original, anthraquinone, ethyl propionate and other aliphatic carboxylic acid esters; 3 methoxy propionic acid A: 3- Methoxypropionic acid, 3-ethoxypropionic acid formazan, 3_ethoxypropane 3 ethyl ester, 3-methoxy-2-methylpropanoate methyl ester, 3-decyloxy group Butyric acid vinegar, -oxybutyl ethane g owed 3-methyl ester, 3-methoxy _3_methyl propionic acid butyl, butyl 3-methoxy-3-methylbutyrate, acetamidine Other solvents such as methyl acetate, decyl pyruvate, propylene glycol, etc.; aromatic hydrocarbons such as toluene and xylene ; ketones such as 2-heptanone, 3-heptanone, 4-heptanone, cyclopentanone, cyclohexanone; N,N-didecylguanamine, N-methylacetamide, n,N- Diterpenoids: decylamines such as acetalamine and N-methylpyrrolidone; lactones such as γ-lactone, and the like are not particularly limited. These solvents may be used singly or in combination of two or more. The positive-type radiation composition can contain a resin soluble in an alkaline aqueous solution within a range not inhibiting the object of the present invention. Examples of the resin soluble in the alkaline water 201131300 solution are phenolic resin and polyvinyl phenol. , polyacrylic acid, polyvinyl alcohol, styrene-maleic anhydride resin, and polyacrylate containing acrylic acid, ethyl alcohol, or vinyl wire as a monomer unit or the silky-derived scale. Soluble The amount of the resin in the aqueous secret solution is adjusted according to the type of the (4) cyclic compound, but it is preferably 30 parts by weight of the above-mentioned cyclic compound, more preferably 〇 by weight. 1 part by weight, particularly preferably 5 part by weight to 5 parts by weight, particularly preferably 〇 by weight. [Formation of a resist pattern The present invention relates to a photoresist pattern forming method, comprising the steps of: placing the above-mentioned present-positive-type S on a substrate on a 3 photoresist film; exposing the film; (4) Forming = pattern by light development. The fourth layer of light (4) can be formed as the upper layer photoresist in the multilayer photoresist process. In order to form the photoresist pattern, by spin coating, cast coating, j cloth The coating method is applied to the substrate of the present invention by applying the above-described emitter composition 'four wires' to the known substrate. The previously known substrate, the two temples, may be exemplified by a substrate for electronic components, or 3 fixed wiring, board, etc. More frequently, it can be listed as two stones: 曰: a substrate made of metal such as chrome, iron, or aluminum, or a glass base: a material of a wiring pattern, for example, copper, inscription, recording, and gold Wait. In addition, the organic 糸It may be provided with an inorganic system and/or a bottom resistance on the substrate as needed. The film may be an inorganic anti-reflective coating (61 201131300). The organic film of the organic system is exemplified by an organic antireflection film (organic BARC). Can also enter the surface treatment of the six Asian 曱 二 二 二. The coated substrate is heated as needed. The heating conditions are based on the above. The composition of the raw material has changed, and it is preferably 2 〇 ° C ~ dip is preferably 2 〇 C 〜 15 〇 C. It is preferable to use a photoresist to improve the durability of the substrate by heating. Then, it is selected from any of a group consisting of visible light, ultraviolet light, excimer laser, electron beam, extreme ultraviolet (EUV) X-ray, and ion beam to expose the photoresist film. The method of blending silk parts (4) the composition of the level of the composition of the radiation, etc. (4) when selected. In order to stably form a fine pattern of south precision in exposure, the towel of the present invention is preferably heated after radiation irradiation. The heating condition varies depending on the composition of the radiation-sensitive composition, etc., and is preferably 2 (TC to 250T: more preferably 2 (TC to 150). (3. Next, by exposing the exposed photoresist film The shirt is formed with an alkali developer to form a predetermined resist pattern. The above-mentioned test developer is used, for example, to preferably be 1 wt% to 10 wt%, more preferably 1 wt% to 5 wt%. The concentration of the mono-, di- or dialkyl amines, mono-, di- or tri-alcohol amines 'heterocyclic amines, tetradecyl ammonium hydroxide (TM AH), biliary test ( Choline) One or more aqueous test solutions of the test compound. When the concentration of the alkaline aqueous solution is 1% by weight or less, it is preferable to prevent the exposed portion from being dissolved in the developer, and it is preferable. In the above, an alcohol such as methanol, ethanol or isopropyl alcohol or the above surfactant may be added in an appropriate amount. Among them, it is particularly preferable to add isopropyl alcohol of 10% by weight to 30% by weight. Liquid to photoresist 62 201131300 濡 wet, so it is better. In addition, the case of the developer, usually after development = such a secret aqueous solution After the photoresist pattern is formed, a known method such as a dry type using a plasma gas, a emulsified copper squeegee, or a vaporized iron solution, etc., may be performed, for example, after forming a photoresist pattern. The deposit of copper, solder deposits, nickel, gold, etc. The residual photoresist pattern of the crucible can be used to reduce the timing of the solvent or the water used for development.

Listed as leg sputum (propylene glycol mono (tetra) acetate vinegar), pgme (^G A _) 'EL (lactic acid ethyl vinegar), etc., for example, a strong aqueous solution can be exemplified by ~20 wt% aqueous solution of hydrogen hydroxide or i wt%~2 Screen out the % aqueous solution of nitrous oxide. Examples of the above-mentioned peeling method include a dipping method, a spraying method, and the like. Further, the wiring substrate on which the photoresist pattern is formed may be a multilayer wiring substrate or may have a small-diameter through hole. The wiring substrate obtained in the present invention may be formed by a method in which a metal is vapor-deposited in a vacuum and then a photoresist pattern is dissolved in a solution, that is, after the formation of the photoresist pattern. EXAMPLES Hereinafter, examples of the invention will be described more specifically by way of examples. However, the invention is not limited to the examples. In the following synthesis examples, the structure of the compound was confirmed by 1H-nuclear magnetic resonance (NMR) measurement. 63 201131300 <Synthesis Example> Synthesis of Compound (B) • Synthesis Example 1 Synthesis of CR-1B A dropping funnel, a Dimroth condenser, a thermometer, and a stirring were placed in a dry and nitrogen-substituted gas. In the four breaths of the wing, (1000 ml), it was put into the Kanto Chemical Company under the nitrogen flow to produce guanidine diphenol (22 g, 0.2 mol), 4-isopropylphenylfurfural (29.6 g, 〇.2 stupid dehydrated ethanol). (200 ml), adjust the ethanol solution. Heat the solution to the side with _, and heat to 85 ° C. Then use a dropping funnel to add 75 ml of concentrated hydrochloric acid (35%) to ~ After it is stirred, the mixture is cooled, allowed to reach room temperature, and then cooled down. After standing for 丨 hours, a pale yellow target is formed, which is separated by ice bath. The crystals were washed with 500 ml of methanol, separated by filtration and dried under vacuum, whereby the desired product (hereinafter, CR-1B) (45.6 g, yield 95%) was obtained. Chromatography mass spectrometry (LC-MS) for eight fruits showing f) target The molecular weight of 960. In addition, the chemical shift value (δρρπι, TMS basis) of H-NMR in the 氘代二甲=石风/谷剂 is 1.1 〜1·2 (m, 24Η), 2.6~2.7 (m, 4Η), 5.5 (s, 4Η), 6.0~ 6.8 (m, 24Η), 8.4, 8_5 (d, 8Η). Further, g) is soluble in an alkaline developing solution (TMAH is 2.38 wt%), and 'h) has a heterogeneous radical, e) Mw/Mn = l.oo. [化37] 64 201131300

Synthesis of CR-2B In the same manner as in the case of CR-1 except that 4-isopropylbenzaldehyde in the synthesis example of CR-1B was replaced by 4-cyclohexylaldehyde. As a result, CR-2B (50 g, yield 91%) was obtained. The structure of the compound was analyzed by LC-MS, and the result showed f) the molecular weight of the target was 1121. In addition, the chemical shift value (5 ppm, TMS basis) of 1H-NMR in deuterated chloroform solvent is 0.8 to 1.9 (m, 44H), 5.5, 5·6 (d, 4H), 6.0 to 6·8 (m) , 24H), 8.4, 8.5 (m, 8H). In addition, g) is soluble in an alkaline developing solution (TMAH is 2.38 wt%), h) has a fluorene-based radical in the molecule, and e) Mw/Mn = 1.00. [化38] 65 201131300

(CR — 2 B) The synthesis of CR-1A-EE100 was carried out in a four-necked flask (1000 ml) provided with a dropping funnel, a tube, a thermometer, and a stirring blade, which were sufficiently dried and purged with nitrogen. 5.8 g (8 〇m ^ of ethyl vinyl ether) was added dropwise to a solution containing 9.6 g (10 mmol) of CR-1B, 2.5 g of para-A, and an acidity ratio of 镔, 4 〇〇ml of acetone. The reaction solution was stirred at room temperature for 24 hours, and the obtained solid was purified by column chromatography using hexane/ethyl acetate. 12.2 g of phenol" 100 〇 1% of the argon atom of the hydroxyl group was taken from the ethoxyethyl group to take CR-1A-EE100. The structure of the compound was analyzed by LC_MS, and the molecular weight of the &amp; The chemical shift value (δρρηι, the basis of the H-NMR of the obtained product in the dimethyl hardening solvent is 〇9~1 (m, 24H), 1.1 1.2 (m5 24H), 1.3^1.4 (m, 24H) ), 2.6~2 (m, 4H), 3.3~3 4 1 yang, &lt; !, , (m, 16H), 5.1 (m, 8H), 5.5 (s, 4H), 6.0^ 66 201131300 6.8 (m , 24H). In addition, b) is insoluble in alkaline developer (T MAH is 2.38 wt%), c) becomes soluble in an alkaline developer (TMAH is 2.38 wt%) by the action of an acid, and d) has an ethoxylate B as an acid dissociable reactive group in the molecule. Base, e) Mw/Mn = 1.00. [化39]

(CR~ 1 A-EE 1 Ο 0) Synthesis of CR-1A-CE100 A well-dried, nitrogen-substituted four-necked flask (1000 ml) equipped with a dropping funnel, a Dairy cooling tube, a thermometer, and a stirring wing. In a solution containing 9.6 g (10 mmol) of CR-1B synthesized in Synthesis Example 1, 2.5 g of pyridinium sulfonate, and 400 ml of 1,3-dioxolane under a nitrogen stream 201131300: 10.0 g (80 mmol) of cyclohexyl vinyl ether was added dropwise. The reaction solution was stirred at room temperature for 24 hours. After the completion of the reaction, the solvent was removed, and the obtained solid was mixed with hexane/ethyl acetate = 1/3, and the mixture was subjected to column chromatography to obtain a hydrogen of 12.2 g of a suitable hydrogen group. The m〇i% of the atom was substituted by cyclohexyloxyethyl CR-1A-CE100. The structure of the compound was analyzed by LC-MS, and the result showed a) the molecular weight of the target was 1969. The chemical shift value (δρριη, TMS basis) of 1H-NMR in the solvent of the hydrazide is 1.0 to 3·5 (m, 148 Η), 5.5 (s, 4 Η), 6.0 to 6·8 (m, 24 Η). ' b) Insoluble in alkaline developer (TMAH is 2.38 wt ° / 〇) in 'c) becomes soluble in alkaline developer (ΤΜΑΗ 2.38 wt%) by the action of acid, d) Cyclohexyloxyethyl group as an acid dissociable reactive group in the molecule, e) Mw/Mn=l.〇〇. [Chem. 40] 68 201131300 JU/ l^pif

CR-2A Marriage 00 is synthesized, filled, dried, and nitrogen-substituted 151 is equipped with a dropping funnel, Dais cold 2: 50, and a four-necked flask of the mixing wing is flowed down to contain n 〇CR_1B Z g (10 mm 〇D in the synthesis of the synthesis of 2A, the temple ★ 8 of the benzene benzene continued acid ° than the bite iron, the solution of the ml of acetone at room temperature two to two: two upper base (four) base (4) The reaction solution is used to remove the solvent after using m^7^, and the obtained solid sputum is replaced with hexane/ethyl acetate=1/3 mixed solvent 100«t chyloethyl substituted CR-2A-EE100 The structure of the compound was analyzed by LC-MS, and the molecular weight of the target of 69 201131300 was 1697. The chemical shift value (δρριη, TMS basis) of the obtained product in deuterated dimethyl sulfoxide solvent was 0.8. ~1.9 (m, 92Η), 3.5 (m, 16Η), 5.5, 5.6 (d, 12Η), 6.0~6.8 (m, 24H). In addition, b) insoluble in alkaline developer (TMAH is 2.38 wt%) Medium, c) becomes soluble in an alkaline developing solution (TMAH is 2.38 wt%) by the action of an acid, d) has an ethoxyethyl group as an acid dissociable reactive group in the molecule, e) Mw/ Mn = 1.00. [化41]

(CR-2 A-EE 10 0) Synthesis of CR-2A-CE100 In a four-necked flask (1000 ml) equipped with a dropping funnel, a Dynacol cold 201131300f, a thermometer, and a stirring wing, which were sufficiently dried and replaced with nitrogen. , under air/guar, CR_2B synthesized in Synthesis Example 2 containing U 2 g (1〇mmoi), 2·5 g of pyridine sulfonate sulfonate, 400 ml of i,3-dioxane The ring solution solution was added with a cyclohexyl (tetra) group of lGQg (8GmmGl). The solution was stirred at room temperature for 24 hours. After completion of the reaction, the solvent was removed, and the obtained solid was purified by column chromatography using hexane/ethyl acetate = 1/3 mixture solvent. 13 2 g of a hydrogen atom of a phenolic hydroxyl group of ι〇〇 mol% was substituted with cyclohexyloxyethyl group, cr 2 A-CE100. The structure of the hydrazine compound was analyzed by LC-MS, and the results showed that a) the molecular weight of the target was 212 9 . The 1H-NMR chemical shift value (δρριη, TMS basis) of the obtained product in the deuterated dimethyl sulfoxide solvent was 〇84 9 (m, 148H), 3.5 (m, 8H), 5.5, 5.6 (d, 12H). ), 6.0~6.8 (m, 2ffi). In addition, b) is insoluble in the alkaline developing solution (1:]^8-11 is 2 38 wt%), c) becomes soluble in the alkaline developing solution (TMAH is 2.38 wt%) by the action of an acid , d) has a cyclohexyloxyethyl group as an acid dissociable reactive group in the molecule, e) Mw / Mn = l. [化42] 71 201131300

The synthesis of CR-1A-EE50 was carried out in the same manner as in the case of CR-1A-EE100 except that the amount of ethyl vinyl ether in the synthesis example of CR-1A-EE100 was changed to half, and the desired transmembrane group was obtained. 50 mol% of a hydrogen atom CR-1A-EE50 (mixture) substituted with an ethoxyethyl group. Further, the obtained compound b) was insoluble in an alkaline developing solution (TMAH was 2.38 wt%), c) was made soluble in an alkaline developing solution (TMAH was 2.38 wt%) by the action of an acid, d) a molecule There is an ethoxyethyl group as an acid dissociable reactive group. The synthesis of CR-1A-CE50 was carried out in the same manner as CR-1A-CE100 except that the amount of ethyl vinyl ether in the synthesis example of CR-1A-CE100 was changed to half. 50 mol% of a hydrogen atom of a hydroxyl group is substituted with an ethoxyethyl group of CR-1A-CE50 (mixture). Further, the obtained compound b) was insoluble in an alkaline developing solution (tmaH was 2.38 wt%), and c) was dissolved by an acid to become soluble in an in-situ developer (TMAH was 2.38 wt%), d) There is a cyclohexyloxyethyl group as an acid dissociable reactive group. The synthesis of CR-2A-EE50 is carried out in the same manner as in the case of CR_2A_EE1〇〇 except that the amount of ethyl vinyl ether in the synthesis example of CR-2A-EE100 is changed to half, and a hydrogen atom of a phenolic hydroxyl group is obtained. 50 mol% CR-2A-EE50 (mixture) substituted with cyclohexyloxyethyl. Further, the obtained compound b) is insoluble in an alkaline developer (TMAH is 2.38 wt/〇), c) becomes soluble in alkali (=ΑΗ2·38 wt%) by the action of an acid, d Having an ethoxyethyl group as an acidolysis reaction group in the molecule. Synthesis of CR-2A-CE50 Addition of the ethyl vinyl ether in the synthesis example of im2A_cEi〇〇 was changed to half, and 5G mGl% of the hydrogen atom of the same group as CR2ACE1 was subjected to cyclohexyloxy B. Deuterated CR-2A-CE50 (mixture). ^ (τμαηλ 2; 8 reaction base towel 'd) is called acid dissociation

S 73 201131300 (Examples 1 to 4 and Comparative Examples 1 to 8) The composition test was prepared by blending the components described in the first table with a film of Teflon (registered trademark) having a pore diameter of 0.1 μm. The filter was filtered to prepare a sensitized radioactive composition, and each of the sensitized radioactive compositions was subjected to the following evaluation. The results are shown in Table 3. (1) Evaluation of sensitivity The photoresist was spin-coated on a clean crucible wafer, and then pre-bake&apos;PB was baked in an oven to form a photoresist film having a thickness of 6 Å. An electron beam tracing apparatus (elS-7500, manufactured by Elionix Co., Ltd.) was used for the 5 glare resist film, and an electron beam set by a line and gap of 1:1 at intervals of 100 nm was irradiated. After the irradiation, it was heated at a predetermined temperature for 9 sec., and developed in a 2.3 8 w t % TMAH aqueous solution for 60 seconds. Then, it was washed with water for 3 seconds and dried to form a positive resist pattern. The obtained lines and gaps were observed using a scanning electron microscope (S-4800 manufactured by Hitachi High-Technology). Further, the dose (pC/cm2) at this time was taken as the sensitivity. ~ A : Dosage $50 pC/cm2 (excellent sensitivity) B : 50pC/cm2 <dose $120pC/cm2 (good sensitivity) C : 120 gC/cm2 <dose (poor sensitivity) (2) Rough line edge Degree (LER) is evaluated by using Hitachi Semiconductor's SEM terminal PC V5 for offline measurement of any linear point in the length direction of the gap of 100 μm (〇75 μηη) at 100 nm intervals ((H) Hitachi Science Systems manufactured) 'Measurement edge 201131300, /17ριΙ edge distance from the baseline. The k-bias deviation (3 σ ) is calculated from the measurement results. A : LER ( 3σ) $3.5 nm (good LER) C : 3.5 nm &lt; LER (3σ) (not good LER) It is confirmed by the results of the patterning test that the specific compound (Α) and the compound (Β) of the present invention are used. The sensitizing radioactive composition was superior in sensitivity and LER to the sensitized radioactive composition using the compound (Α) containing the mixture of the comparative examples. Further, the specific compounds (Α) and the compound (Β) of the present invention are easy to produce compounds having a purity of 100%, respectively, and can be blended only by mixing them, and the quality is easy. On the other hand, the compound (Α) containing the mixture of the comparative examples was a mixture, and the composition thereof was unevenly produced each time, and quality management was difficult. 75 201131300 [Table l] (C) (E) Compound (A) Compound (B) Acid generator acid diffusion controller solvent (g) (g) (g) (g) (g) Example 1 CR-1A-EE100 CR-1B P-1 Q-1 S-1 0.50 0.50 0.3 0.03 30.0 Example 2 CR-1A-CE100 CR-1B P-1 Qi S-1 0.50 0.50 0.3 0.03 30.0 Example 3 CR-2A-EE100 CR-2B P -1 Q-1 S-1 0.50 0.50 0.3 0.03 30.0 Example 4 CR-2A-CE100 CR-2B P-1 Qi S-1 0.50 0.50 0.3 0.03 30.0 Comparative Example 1 CR-1A-EE50 P-1 Q-1 S -1 1.00 0.3 0.03 30.0 Comparative Example 2 CR-1A-CE50 P-1 Q-1 S-1 1.00 0.3 0.03 30.0 Comparative Example 3 CR-2A-EE50 P-1 Q-1 S-1 1.00 0.3 0.03 30.0 Comparative Example 4 CR-2A-CE50 P-1 Q-1 S-1 1.00 0.3 0.03 30.0 Comparative Example 5 CR-1A-EE100 P-1 Q-1 S-1 1.00 0.3 0.03 30.0 Comparative Example 6 CR-1A-CE100 P- 1 Q-1 S-1 1.00 0.3 0.03 30.0 Comparative Example 7 CR-2A-EE100 P-1 Q-1 S-1 1.00 0.3 0.03 30.0 Comparative Example 8 CR-2A-CE100 P-1 Q-1 S-1 1.00 0.3 0.03 30.0 (c) Acid generator P-1: Triphenylphenylhydrazine trifluorosulfonate (MidoriKagaku (share)) (E) Acid diffusion control agent Q-1: Trioctylamine (Tokyo Chemical Industry Co., Ltd. ( share) Solvent S-1: propylene glycol monoterpene ether (Tokyo Chemical Industry Co., Ltd.) 76 201131300 [Table 2] PEB ·*·, ftf LER (3σ) (°C) - --- V Vr.m^ ^ Example 1 110 _____A —--- A Example 2 110 AA Example 3 110 AA Example 4 110 --- A Comparative Example 1 110 AC Comparative Example 2 110 - C Comparative Example 3 110 *****^ - C Comparative Example 4 110 AC Comparative Example 5 110 c Invisible red symplectic comparison Example 6 110 -----.— ^ Knife Fan Dye - Pattern Comparison Example 7 110 .-___ Unable to shape Hi An Comparative Example 8 110 1 -------- - '/ &quot; Where ISj band _ ___ - Pattern PEB : Temperature at which electron beam is heated after irradiation (Comparative Example 9) In the second example 4, instead of compound (a),

PHS-CE100 used as a molecular polystyrene (PHS) (MW = 8,000 'Aldrich) towel, except that % hexyloxyethyl 1 〇〇 m 〇 1% was used Patterning test. The knot 77 201131300 is ' LER is judged to be c. (Comparative Example 10) A patterning test was carried out in the same manner as in Example 4 except that the CR 2B of the compound (8) was used as the polymer (4) (PHS) (Mw = 8, _, manufactured by Aldrich). Its conclusion is judged as C. (Comparative Example 11) In Example 4, PHS-CE100 was used instead of CR 2A cei (8) of the compound (A), and CR 2b* of the compound (B) was used instead of the polyphenylene benzoate (PHS) as a polymer ( Mw=8, _, manufactured by Aidrich) In addition to this, a patterning test was performed in the same manner. As a result, no pattern was obtained at a dose of ς 120 pC/cm or less. Further, in any of Comparative Example 9 to Comparative Life J, it was confirmed that the spot was caused by poor phase solubility by obtaining %· _ by spin coating. Further, it is suggested that the polyphenylene styrene which is a polymer or the polystyrene which introduces an acid dissociable functional group has a molecular weight distribution, and is also inferior in terms of quality control. [Industrial Applicability] The present invention is suitably used for an acid-amplified low molecular weight positive-type radioactive composition and a resist pattern forming method using the same. [Simple description of the diagram] / ° None. [Main component symbol description] None. 78

Claims (1)

201131300 VII. Patent application scope: h~ a positive-type radioactive composition containing: Compound (a) satisfying all the conditions of the following a) e), and compounds satisfying all the conditions of f) to 丨) below ( B) directly or indirectly generating an acid by irradiation of any one of radiation selected from the group consisting of visible light, ultraviolet light, excimer laser, electron beam, extreme ultraviolet (Ευν), xenon ray, and ion beam An acid generator (C), an acid diffusion controlling agent (e), and a solvent; and the composition contains 1 wt 0 /❶ to 80 wt% of a solid component and 20 wt% to 99 wt% of a solvent (A) The sum of the weight of the compound and the weight of the compound (b) is 50 wt% to 99 wt% of the total weight of the solid component; a) molecular weight · 400 to 3000; b) insoluble in the developer (tetramethyl hydroxide) Ammonium (TMAH) is 2 to 38 wt%); c) becomes soluble in an alkaline developer (TMah is 2.38 wt%) by the action of an acid; d) has at least one acid-dissociated functional group introduced therein Phenolic hydroxyl or carboxyl group; e) l, 00$Mw/Mn$l.〇5 (Mw: number average molecule , Mw : weight average molecular weight); 'f) molecular weight: 350~2500; g) soluble in alkaline developing solution (TMAH is 2.38wt%); h) having at least one divalent base or slow base in the molecule; i) 1.00$Mw/Mn$1.05. 2. The positive-type radioactive composition 79 201131300 according to claim 1, wherein the compound (A) is a compound having an acid-dissociable functional group introduced into all phenolic hydroxyl groups and carboxyl groups of the above compound (Aa). ). 3. The positive-acting radioactive composition as described in claim 1, wherein the compound (Bb) of the above-mentioned compound (Β) is not introduced with an acid-dissociable functional group on all of the moth groups and the moieties. 4. If you apply for a patent scope! The positive-type radioactive composition according to the above aspect, wherein the compound (A) is the compound (Aa), that is, the cyclic compound (A1) represented by the following formula (1A), and the compound (b) (Bb)' is a ring (B1) represented by the following formula (1B): [Chemical 1] ' L is independently selected from a straight bond, a straight 2-shaped h-branched nucleus having a carbon number of 1 to 20, a aryl group having a carbon number of 3 to 2 (), and -0... 〇c(,〇_, m_c(=0)...N(R5&gt;CK))a, -s_, fox, ·%, and a divalent group in a group consisting of any combination of the two groups, R1 independently It is selected as 201131300. A burnt group with a free number of 1 to 20, a cycloalkyl group having a carbon number of 3 to 2 fluorene, an aryl group having a carbon number of 6 to 20, a carbon number of 1 to 2 (tetra) alkoxy group, a cyano group, a succinyl group, and a heterocyclic ring. a functional group in the group consisting of a halogen atom and a halogen group having a carbon number of 1 to 2 Å, selected from the group consisting of a substituted fluorenyl group having 2 to 20 carbon atoms, an i-substituted ethyl group having 3 to 2 carbon atoms, and a carbon number 4 to 20, i-substituted _-n-propyl group, l-branched alkyl group having 3 to 2 carbon atoms, Wei group having 1 to 20 carbon atoms, arsenic group having 2 to 2 carbon atoms, and 1-substituted carboniferous number 2 20 An acid-dissociable functional group in a group consisting of a oxyalkyl group, a cyclic fluorenyl group having 2 to 2 carbon atoms, an alkoxycarbonyl group having an inverse number of 2 to 20, and an alkoxycarbonylalkyl group, or a hydrogen atom, R1 is independently a carbon number of 2 to 20, or the following formula [Chemical 2] The group represented by P, R4 is an alkyl group selected from a carbon number of 1 to 20, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, and a cyano group. a functional group in the group consisting of a nitro group, a heterocyclic group, a halogen atom and an alkylalkyl group having 1 to 20 carbon atoms, or a substituted methyl group selected from the group consisting of: ε carbon number 2 to 20, carbon number 3~ a 1-substituted ethyl group of 20, a 1-substituted-n-propyl group having 4 to 20 carbon atoms, a 1-branched group having 3 to 20 carbon atoms, a decyl group having 1 to 20 carbon atoms, and a fluorene having 2 to 20 carbon atoms. a group, a 1-substituted alkoxyalkyl group having 2 to 20 carbon atoms, a cyclic ether group having 2 to 20 carbon atoms, an alkoxycarbonyl group having 2 to 20 carbon atoms, and an alkoxy group 81 201131300 • A- i miscellaneous The acid-decomposing functional group in the group consisting of a group, the ar or r4 is an acid-decomposing functional group, the r5 is a hydrogen atom or an alkyl group having a carbon number of 2 ,, and m is an integer of 1 to 4, p is an integer of 〇~5) [Chemical 3] (In the formula (1B), L is independently a linear or branched alkyl group selected from a single bond, a carbon number of 1 to 2 Å, a stretched alkyl group having a carbon number of 3 to 20, and a carbon number of 6 to 24; Aryl group, -0-, -〇c(=〇)_, _〇c(=〇)〇_, -n(r5A)-c(=o)_, -n(r5A)-c(=o a divalent group in the group consisting of 〇-, -S_, _so_, -s〇2_, and any combination of the groups, and RiA is independently selected from an alkyl group having a carbon number of 1 to 20, and a carbon number of 3 ～20 cycloalkyl, aryl 6 to 20, alkoxy 1 to 2 fluorene, cyano, nitro, hydroxy, heterocyclic, halogen atom, carboxyl group, and carbon number 1 to 20 a functional group ' or a ruthenium atom in the group consisting of alkylalkylalkyl groups, R" is independently an alkyl group having 2 to 20 carbon atoms, or the following formula [Chem. 4] 82 201131300, The group represented by R4A is an alkyl group selected from the group consisting of carbon number 丨 汾 汾, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkoxy group having a carbon number of 加, and a cyano group. a functional group in a group consisting of a nitro group, a heterocyclic group, a hydroxyl group, a sulfonium atom, a carboxyl group, and an alkylalkyl group having a carbon number of -20, or a substituted methyl group having a carbon number of 2 to 20, and a carbon number 3~2〇 of hydrazine substituted ethyl, carbon number 4~20 1-substituted-n-propyl group, carbon number 3~2〇 of bismuth alkyl group, carbon number 1~2^ of decyl group, carbon number 2~ 2〇 醯 group, carbon number 2~2〇, substituted oxyalkyl group, carbon number 2~2〇 ring, carbon number 2~2〇, alkyloxy group and silk group 6 group Acid dissociation of 1% group towel = at least one of the base 'R or R4A is a divalent base or a slow base, r5A is a wind atom or a carbon number of 1 to 20, an integer of 4, ^ is 〇~5 integer). The method comprises the following steps: using a sensitized radioactive group photoresist film as described in IS: 1, 1 to 4, item 4, to form a sister film; Light; and forming the resist pattern by the nine resist film. 83 201131300 IV. Designated representative map: (1) The representative representative of the case is: None. (2) A brief description of the symbol of the representative figure: Lifetime 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: None. 201131300^ For the Chinese manual No. 99142385, there is no slash correction. This revision date: March 23, 1995 invention patent specification (this manual format ', do not change anything, please do not fill in the ※ part of the mark. ※ ※Application number: f ※Application曰: ※^(:Classification: I. Invention name: (Chinese/English) Low molecular weight positive-type radioactive composition and photoresist pattern forming method LOW MOLECULAR WEIGHT POSITIVE RADIATION-SENSITIVE RESIN COMPOSITION AND 〇FORMING METHOD OF RESIST PATTERN 2. Abstract of the Invention: It is an object of the present invention to provide a radiation-sensitive composition containing a photoresist material (compound) which has a good shape and a good manufacturing and quality control, and a photoresist pattern using the radiation-sensitive composition. The present invention solves the problem by a positive-type radioactive composition containing a specific low molecular compound and a photoresist pattern forming method using the same. 201131300t Revision period: March 23, 100 is No. 142385 Chinese manual without slash correction. 6. Description of invention: TECHNICAL FIELD The present invention relates to a useful positive-type radioactive composition containing a specific low molecular weight compound and a photoresist pattern forming method using the positive-type radioactive composition. [Prior Art] The photoresist material is a high molecular weight positive photoresist. However, the molecular weight of the ruthenium molecular positive photoresist material (polymer) is as large as about 10,000 to 100,000, and the molecular weight distribution is also wide. In lithography, roughness is generated on the surface of the fine pattern, which makes it difficult to control the size of the case and the yield is lowered. The lithography using the previous polymer-based photoresist material is finer in terms of miniaturization. Patterns, proposed with a variety of low molecular weight positive photoresist materials, the previous low molecular weight positive photoresist materials (compounds) are usually obtained by allowing the acid dissociable functional groups to lead to low molecular weight and more desired reactions. In this case, the obtained photoresist material is referred to as a (four)-based reference patent document, and further has a low-substance-based protective group to obtain a low score of a pure base. When the quantity is more than =, there is a low molecular weight that is introduced into the k-shirt and is obtained by the company. 201131300 _ . 1 Revision date: March 23, 2003 is the 99142385 Chinese manual without a sizing correction of this type of photoresist The problem of the purity of the material is low, and the improvement of the material is expected. The prior art document is disclosed in Japanese Patent Laid-Open Publication No. 2009-173623. It is an object of the invention to provide a positive-type radioactive composition that solves the above problems and a photoresist pattern-forming U-forming method using the positive-type radioactive composition. The present inventors have diligently studied in order to solve the above problems, and as a result, have found that a useful positive-type radioactive composition containing a specific low molecular weight compound is effective for solving the above problems, and provides a good resist pattern shape, thereby completing the present invention. That is, the present invention is as follows. A positive-type radioactive composition comprising: a compound (A) satisfying all the conditions of the following a) to e), and a compound (B) of all the conditions satisfying the following f) to i) An acid which directly or indirectly generates acid by irradiation of any one of a group consisting of visible light rays, ultraviolet rays, excimer lasers, electron beams, extreme ultraviolet (EUV), X-rays, and ion beams Producing agent (C) 'acid diffusion controlling agent (e), and a solvent; and the composition comprising 1% by weight (wt%) to 80% by weight of a solid component and 20% by weight to 99% by weight of a solvent (the compound) The sum of the weight of A) and the weight of the compound (B) is from 50% by weight to 99% by weight based on the total weight of the solid component. 5 201131300 For the _ &quot;Η·号 Chinese manual without a slash correction. Amendment date: March 23, 2003 a) Molecular weight: 400~3000; b) No; Valley in the developer (tetramethyl hydroxide) The tetramet Jjyl ammonium hydroxide (TMAH) is 2.38 wt%; c) becomes soluble in the test developer (TMAH is 2.38 wt%) by the action of acid; d) has at least one introduction in the molecule a phenolic hydroxyl group or a carboxyl group having an acid dissociable functional group; e) 1.00SMw/Mn$l.〇5 (Mn: number average molecular weight, Mw: weight average molecular weight); f) molecular weight: 350 to 2500; g) soluble In an alkaline developer (TMAH is 2.38 wt%); h) has at least one phenolic hydroxyl or carboxyl group in the molecule; i) l. 〇〇$Mw/Mngl.〇5. 2. The positive-type radioactive composition according to Item 1, wherein the compound (Α) is a compound having an acid dissociable functional group introduced into all the divalent groups of the above compound (β) and a repellent group (Aa) ). 3. The positive-type radioactive composition according to Item 1, wherein the compound (B) is a compound (Bb) having no acid-dissociable functional group introduced to all of the phenolic hydroxyl groups and the carboxyl group. 4. The positive-type radioactive composition according to Item 1, wherein the compound (A) is the above compound (Aa), that is, the cyclic compound (A1) represented by the following formula (1A), and the above compound ( B) is the above compound (Bb), that is, the cyclic compound (m) represented by the following formula (1B). [化1] 201131300" is the Chinese manual for the 99142385 without a slash correction Amendment date: March 23, 100 〇 (In the formula (1A), 'L is independently a linear or branched alkyl group selected from a single bond, a charcoal number of 1 to 2 Å, and a carbon number of 3 to 20 Cycloalkyl, aryl group of 6 to 24, -〇-, _〇C(=〇)_, _〇c(=〇)〇_, -N(R5)-C(=0)-, -N(R5)-C(=0)0-, -S-, -SO-, -S02-, and a divalent group in a group consisting of any combination of the groups, R1 is independently selected from carbon An alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, a cyano group, a nitro group, a heterocyclic group, and a self atomic atom. And a functional group in the group consisting of a calcined base of 1 to 20, selected from the group consisting of a substituted methyl group having 2 to 20 carbon atoms, a 1-substituted ethyl group having 3 to 20 carbon atoms, and a carbon number of 4 ～20 1-substituted-n-propyl group, 3-branched cyclyl group having a carbon number of 3 to 2 fluorene, a decyl group having a carbon number of 1 to 20, a brewing group having a carbon number of 2 to 20, and a number of 2 to 20 An acid-dissociable functional group in a group consisting of a 1-substituted alkoxyalkyl group, a cyclic ether group having 2 to 20 carbon atoms, an alkoxycarbonyl group having 2 to 20 carbon atoms, and an alkoxycarbonylalkyl group, Or hydrogen atom, R1 Independently, the alkyl group having a carbon number of 2 to 20 or the following formula 7 201131300 is the Chinese manual of the No. $9142385 without a slash correction. Revision date: March 23, 1 [Chemical 2] R4 is a group selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, and a cyano group. a functional group in the group consisting of a nitro group, a heterocyclic group, a halogen atom, and an alkylalkylene group having 1 to 20 carbon atoms, or a group selected from a substituted fluorenyl group having 2 to 20 carbon atoms and a carbon number of 3 to 20 a substituted ethyl group, a 1-substituted-n-propyl group having 4 to 20 carbon atoms, a 1-branched alkyl group having 3 to 20 carbon atoms, a decyl group having 1 to 20 carbon atoms, a fluorenyl group having 2 to 20 carbon atoms, and carbon An acid group of a group consisting of a 2-substituted alkoxyalkyl group having 2 to 20 carbon atoms, a cyclic ether group having 2 to 20 carbon atoms, an alkoxycarbonyl group having 2 to 20 carbon atoms, and an alkoxycarbonylalkyl group The dissociable functional group, at least one of R1 or R4 is an acid dissociable functional group, R5 is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, m is an integer of 1 to 4, and p is an integer of 0 to 5. ) [Chemical 3] 201131300 A II No textline revision for Chinese manual No. 99H2385 Modified flood season: March 23, 1 (in the formula (1B), 'LA is independently a linear or branched stretched wire selected from a single, Wei 3~2Q ^ _ Α~2() 〔^ (9) Cycloalkyl group, aryl group with a carbon number of 6 to 24, ... 0(:(=〇)_, 〇c(=〇)〇, -N(R5a)_C(=0)_, _n(r5A) _c(=0)〇_, _ss〇, _s〇2 and a divalent group in a group consisting of any combination of the groups, r1A is independently selected from a carbon number of 1 to 20, a carbon number a cyclized group of 3 to 20; an aryl group having 6 to 20 carbon atoms; an alkoxy group having 1 to 20 carbon atoms; a cyano group; a nitro group, a hydroxyl group, a heterocyclic group, a aryl group, a carboxyl group, and a carbon number; a functional group ' or a hydrogen atom in the group consisting of 1 to 20 alkylalkyl groups, and R' is independently a fluorenyl group having 2 to 20 carbon atoms or the following formula [Chemical Formula 4] 9 201131300 is the Chinese manual of the "I42385" without a slash correction. The revised period: the base represented by March 23, 100, R4A is selected from an alkyl group having a carbon number of 1 to 2 Å, and a carbon number of 3 to 20. a cycloalkyl group, an aryl group having 6 to 20 carbon atoms, an alkoxy group having a carbon number of 2, a cyano group, a nitro group, a heterocyclic group, a hydroxyl group, a sulfonium atom, a carboxyl group, and an alkyl decane having a carbon number of i to 20 a functional group in the group consisting of a group, or a substituted fluorenyl group having 2 to 20 carbon atoms, a hydrazine-substituted ethyl group having 3 to 2 carbon atoms, and a 1 -substituted-n-propyl group having 4 to 20 carbon atoms a 1-branched alkyl group having 3 to 20 carbon atoms, a sulfonium group having a carbon number of 20, a fluorenyl group having 2 to 2 carbon atoms, a fluorene having 2 to 2 carbon atoms, and an alkoxyalkyl group Acid dissociation, group, 1^ or r4a in a group consisting of a cyclic ether group having 2 to 20 carbon atoms, an alkane having a carbon number of 2 to 20, a base group, and a oxycarbonylalkyl group At least one of them is a heterogeneous radical or a rebel group, r5a is a hydrogen atom or an alkyl group having a carbon number of 加~added, an integer of mA*1 to 4, and pA is an integer of 〇~5. A method for forming a photoresist pattern, comprising the steps of: forming a photoresist film on a substrate by using the radiation-sensitive composition according to any one of items [4] to (4); Exposing; and developing the photoresist film to form a photoresist pattern. [Effect of the Invention] According to the present invention, it is possible to provide a positive-sensing radiation i-lemster that solves the above problems, and a photoresist pattern forming method using the same. In the present invention, the quality of the photoresist compound which is useful for the positive-type radioactive composition is high, and therefore the quality management becomes = good = resistance: ί The positive-sensing radioactive composition of the compound is applied [10] 31300" "Revised period: March 23, 2013 is the 99142385 Chinese manual without a slash correction. The present invention will be described in detail below. The present invention relates to a positive-type radioactive composition comprising: a compound (A) satisfying all the conditions of the following a) to e), satisfying all the conditions of the following f) to i) Compound (B), directly or indirectly, by irradiation of any one of radiation selected from the group consisting of visible light, ultraviolet light, excimer laser, electron beam, extreme ultraviolet (EUV), X-ray, and ion beam An acid generating agent 〇(C) 'acid diffusion controlling agent (E), and a solvent; and θ the composition contains 1 wt% to 80 wt% of a solid component and 2 wt% to 99 wt% of a solvent , the weight of the above compound (A) and The sum of the weights of the compound (B) is 50 wt% to 99 wt% of the total weight of the solid component. a) Molecular weight: 400 to 5000; b) insoluble in an alkaline developing solution (TMAH is 2.38 wt%); c) It becomes soluble in the developer (TMAH q is 2.38 wt%) by the action of an acid; d) has at least one phenolic hydroxyl group or carboxyl group introduced with an acid dissociable functional group; e) 1.00^ Mw / Mn ^ 1.05 ; Ο molecular weight: 350 ~ 4000; g) soluble in alkaline developer (TMAH is 2.38wt%); h) has at least one phenolic hydroxyl or carboxyl group in the molecule; i) l_00SMw / MnS1. 05. 201131300 ^ &gt; Λ ^ Λ. Λ. Λ. Amendment period: March 23rd of the following year is the 99142385 Chinese manual without a slash correction. The so-called soluble in the developer solution is The dissolution rate of the amorphous film prepared by dissolving the solution obtained by dissolving the compound in a solvent described later is 10 people/sec or more. In addition, it is insoluble in the developer solution. It is an amorphous film produced by a spin coating method using a solution obtained by dissolving the compound in a solvent described later. Solution rate is 5 / sec or less ° The Mw/Mn' indicates a polydispersity, Μη is a number average molecular weight, and Mw is a weight average molecular weight' which can be determined by GPC analysis or the like. Mw / Mn is 1,00 $ Mw / Mn $ 1.05, preferably 1.00SMw / MnS 1.03, more preferably l.OOSMw / Mngl.Ol, Mw / Mii - 1.00 due to the inclusion of a single component, the resulting resist pattern rough The degree is reduced, so it is especially good. The acid dissociable functional group 'is a group which can be introduced into a phenolic thiol group and/or a carboxyl group by dissociation by an action of an acid to produce a phenolic thiol group and/or a carboxyl group, and can be used for KrF or ArF. The hydroxystyrene resin or the (fluorenyl) acrylic resin used in the chemically amplified radiation-sensitive composition is appropriately selected from those proposed. For example, preferred are substituted methyl, 1-substituted ethyl, 1-substituted-n-propyl, :u-branched alkyl, nonylalkyl, fluorenyl, 1-substituted alkoxyalkyl, cyclic ether, And an alkoxycarbonyl group or the like. The above acid-dissociable functional group preferably has no crosslinkable functional group. In terms of ease of manufacture and ease of quality management, the compound (A) is preferably a compound (Aa) which is used for all the aging base groups of the compound (B) and the acid-dissociable functional group. Introducing an acid dissociable functional group on all phenolic hydroxyl groups and carboxyl groups of the compound (b), and in the part 12 201131300, the Chinese specification of the 99142385 is not underlined. The date of this revision: (3) The phenolic base of the year of March 23 Further, a high-purity compound which is advantageous in quality management can be obtained more easily than the introduction of an acid dissociable functional group at a carboxyl group. The compound (B) is preferably a compound (Bb) which is not introduced with an acid dissociable functional group on all phenolic hydroxyl groups and carboxyl groups in terms of ease of manufacture and quality management. The compound (B) having an acid-dissociable functional group which is soluble in an alkaline developing solution can be obtained by introducing an acid dissociable functional group on a part of a divalent light group and a carboxyl group, but the reaction control and quality thereof The management is more difficult than the compound (Bb) in which all of the phenolic hydroxyl groups and the carboxyl groups are not introduced with the acidolyzed exfoliating functional group. In terms of ease of manufacture and quality management, it is more preferred to use the above compound (Aa) in combination with the compound (Bb). The ratio is appropriately determined by the dissolution rate of the solid component at 2.3 ° C for 2.38 wt% of the aqueous TMAH solution. Usually, the compound (Aa): compound (Bb) = 10 to 90: 10 to 90 (wt%), more preferably compound (Aa): compound (Bb) = 12.5 to 5: 50 to 87.5 (wt%) It is especially preferred that the compound (Aa): compound (Bb) = 15 to 30: 70 to 85 (wt ° / 0). In the case of the above-mentioned blending ratio, the high-sensitivity Q luminosity is obtained, and the high-deflection degree line edge coarse rotation becomes small. In the present invention, the compound (A) is the above compound (Aa), that is, the cyclic compound (A1) represented by the following formula (1A), and the compound (b) is the above compound (Bb), that is, the following The cyclic compound (B1) represented by the formula (1B). [化5] 13 201131300 X ✓ Λ. For the Chinese manual No. 99142385, there is no slash correction. Amendment date: March 23, 100 (in the formula (1Α), 'L is independently a linear or branched alkyl group selected from a single bond, a carbon number of ι 2 〇, and a ring number of 3 to 20 carbon atoms. Alkyl group, an extended aryl group having a carbon number of 6 to 24, _〇_, -〇c(=〇)_, 〇c(=〇)〇, -n(r5)-c(=o)_, -n( R5)-c(=o)o-, -s-, so_, _s〇2_ and a divalent group in a group consisting of any combination of the groups, r1 is independently selected from carbon numbers 1 to 20 Alkyl group, cycloalkyl group having 3 to 20 carbon atoms, aryl group having 6 to 20 carbon atoms, alkoxy group having a carbon number of 丨~added, cyano group, nitro group, heterocyclic group, halogen atom, slave number 1~ a functional group in the group consisting of 20 calcined bases and derivatives of the bases, selected from the group consisting of a substituted methyl group having 2 to 20 carbon atoms and a 1-substituted ethyl group having a stone number of 3 to 20; a 1-substituted-n-propyl group having a carbon number of 4 to 20, a 1-branched group having a carbon number of 3 to 20, and a sulfonium group having a carbon number of 1 to 2 Å and a fluorenyl group having a carbon number of 2 to 20. a group consisting of a 1-substituted alkoxyalkyl group having 2 to 20 carbon atoms, a cyclic ether group having 2 to 2 carbon atoms, an alkoxycarbonyl group having 2 to 20 carbon atoms, and an alkoxycarbonylalkyl group Acid dissociating officer a group, or a hydrogen atom, R, independently an alkyl group having a carbon number of 2 to 20, or the following formula [Chem. 6] 14 201131300. Date of revision: March 23, 1999, No. 99H2385 Line correction The group represented by the group or the derivative of the group, R4 is selected from the group consisting of a carbon number i 〜2〇, a cycloalkyl group having a carbon number of 3 to 20, an aryl group having a carbon number of 6 to 20, and Wei 1 to 20 a functional group in the group consisting of an alkoxy group, a cyano group, a succinyl group, a heterocyclic group, a functional atom, a decyl group having a number of 1 to 20, and a derivative of the group, or selected from a substituted methyl group having 2 to 2 carbon atoms, a 1-substituted ethyl group having 3 to 20 carbon atoms, a fluorene-substituted propylene group having a rear number of 4 to 2 fluorene, a 1-branched alkyl group having 3 to 20 carbon atoms, a decyl group having a carbon number, a fluorenyl group having 2 to 20 carbon atoms, a 1 -substituted alkoxyalkyl group having 2 to 20 carbon atoms, a cyclic ether group having 2 to 20 carbon atoms, and an alkoxy group having 2 to 20 carbon atoms An acid-dissociable functional group in the group consisting of a carbonyl group and an alkoxycarbonylalkyl group; at least one of Ri or R4 is an acid-dissociable functional group, and R5 is a hydrogen atom or an alkylene group having 1 to 20 carbon atoms; m is an integer of 1 to 4, and p is an integer of 〇~5) [Chemical 7] 15 201131300 is the Chinese manual of No. 99142385 without a slash correction Amendment date: March 23, 100 (in the formula (1B), LA is independently a cycloalkyl group selected from a single bond, a linear or branched alkyl group having a carbon number, and a carbon number of 3 to 2 Å. Aryl group with a carbon number of 6 to 24, -〇-, -0C(=0)-, -0C(=0)0-, -N(R5A)-C(=〇)-, -n(r5A)- a divalent group in the group consisting of c(=o)〇_, _S-, -so-, -so2-, and any combination of the groups, and R1A is independently selected from an alkyl group having 1 to 20 carbon atoms. a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkoxy group having 1 to 2 carbon atoms, a cyano group, a nitro group, a hydroxyl group, a heterocyclic group, a halogen atom, a carboxyl group, and a carbon number. a 1 to 2 fluorene alkyl fluorenyl group, a functional group in a group consisting of derivatives of the groups, or a hydrogen atom, R&quot; independently an alkyl group having 2 to 20 carbon atoms, or the following formula 8] The represented group or the derivative of the group, R4A is selected from the carbon number of 1 16 201131300Li. The date of revision: March 23, 1995 is the number of $9142385. 〇2〇 cycloalkyl group, aryl group having 6 to 2 carbon atoms, alkoxy group having 1 to 20 carbon atoms, cyano group, triyl group, heterocyclic group, hydroxyl group, halogen atom, carboxyl group, carbon number 1 to 20 a functional group in the group consisting of a decylalkyl group and a derivative of the group, or a substituted methyl group selected from a carbon number of 2 to 2 fluorene, a 1-substituted ethyl group having a carbon number of 3 to 20, and carbon a 4-substituted-n-propyl group having 4 to 20 carbon atoms, a 1-branched alkyl group having 3 to 20 carbon atoms, a decyl group having 1 to 2 carbon atoms, a fluorenyl group having 2 to 20 carbon atoms, and a carbon number of 2 to 2? Acid dissociation in a group consisting of a substituted alkoxyalkyl group, a cyclic ether group having 2 to 20 carbon atoms, an alkoxycarbonyl group having 2 to 2 carbon atoms and a group of U and alkoxycarbonylalkyl groups At least one of the functional group, rIA or R4A- is a phenolic hydroxyl group or a carboxyl group, r5a is a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, mA is an integer of 1 to 4, and pA is an integer of 〇5. The acid-dissociable functional group can be suitably selected from the group consisting of a hydroxystyrene resin or a (meth)acrylic resin used in a chemically amplified photoresist composition for KrF or ArF. For example, a substituted fluorenyl group, a 1-substituted ethyl group, a 1-substituted-n-propyl group, a 1-branched alkyl group, a fluorene group, a fluorenyl group, a 1-substituted alkoxymethyl group, and a cyclic ether are preferred. a base, an alkoxycarbonyl group, and the like. The above acid-dissociable functional group preferably has no crosslinkable functional group. The substituted methyl group is usually a substituted methyl group having 2 to 20 carbon atoms, preferably a substituted methyl group having 4 to 18 carbon atoms, and more preferably a substituted methyl group having 6 to 16 carbon atoms. For example, a methoxymethyl group, a methylthiomethyl group, an ethoxymethyl group, a n-propoxymethyl group, an isopropoxymethyl group, n-butoxymethyl group, and a 3 Base, 2-methylpropoxymethyl, ethylthiomethyl, methoxyethoxymethyl, phenyloxyindol, 1-cyclopentyloxymethyl, 1-cyclohexyloxy Base A 17 201131300 is the Chinese manual of No. $9142385 without a slash correction. Amendment date: March 23, 100 benzyl, benzylthio fluorenyl, phenacyl, 4-bromobenzylidenemethyl, 4 - an anthranilylmethyl group, a piperonyl group, a substituent represented by the following formula (7), and the like. [Chemistry 9] (7) y (In the formula (7), F2 is a carbon group having 1 to 4 carbon atoms. The alkyl group having a carbon number of 1 to 4 may be an alkyl group, an ethyl group, an isopropyl group, a n-propyl group, a tert-butyl group or a n-butyl group. The 1-substituted ethyl group is usually a 1-substituted ethyl group having 3 to 20 carbon atoms, preferably a 1-substituted ethyl group having 5 to 18 carbon atoms, particularly preferably a substituted ethyl group having 7 to 16 carbon atoms. . For example, 1-methoxyethyl, 1-mercaptothioethyl, U-dimethoxyethyl, 1-ethoxyethyl, 1-ethylthioethyl, 1,1 -Diethoxyethyl 18 201131300^ Revision date: March 23, 1999 is the Chinese manual of No. 9142385 No underline correction of the base, n-propoxyethyl, isopropoxy red, n-butoxy Ethyl ethyl, tert-butoxyethyl, 2·methylpropoxyethyl, 丨·phenoxyethyl, phenylthioethyl, U·diphenoxyethyl, u cyclopentane A oxyethyl group, a cyclohexyloxyethyl group, a 1 phenylethyl group, a U-diphenylethyl group, α, and a substituent represented by the following formula (8). [化10] (In the formula (8), R2 is the same as above.) The substituted-n-propyl group is usually an i 2G ❸^-substituted-n-propyl group having a carbon number of 6 to 18, and an enemy is η The propyl group is particularly preferably a carbon number of 8 to 16 oxy oxime and a bismuth 1-branched group which is usually a carbon number of 3 to 2 Q, preferably 19 201131300 / l ^^JiH No. 99142385 Chinese manual without a slash correction. Revision date: March 23, 100 carbon number 5~18 1-branched base 'especially a carbon number 7~16 branch base. For example, isopropyl, t-butyl, tert-butyl, 1, decyl-dimercaptopropyl, 1-mercaptobutyl, 1,1-didecylbutyl, 2-methyl-gold 2-methyl adamantyl, 2-ethyladamantyl, and the like. The fluorenyl group is usually a decyl group having 1 to 20 carbon atoms, preferably a decyl group having 3 to 18 carbon atoms, and particularly preferably a decyl group having 5 to 16 carbon atoms. For example, a trimethyl sulfonyl group, an ethyl dimethyl fluorenyl group, a methyl diethyl decyl alkyl group, a triethyl decyl alkyl group, a tert-butyl bis decyl fluorenyl group, a tert-butyl diethyl fluorene group An alkyl group, a tert-butyl diphenyl stone, a tri-tert-butyl group, a triphenyl sulfonyl group, and the like. The acid group is usually an acid group having 2 to 20 carbon atoms, preferably a fluorenyl group having 4 to 18 carbon atoms, and particularly preferably a fluorenyl group having 6 to 16 carbon atoms. For example, acetyl, phenoxy acetyl, propionyl, butyryl, heptanoyl, hexanoyl, pentamidine Valeryl, pivaloyl, isovaleryl, lauroyl, adamantyl carbonyl, benzoyl, and naphthoquinone | Base (naphthoyl) and so on. The 1-substituted alkoxymethyl group is usually a 1-substituted alkoxyfluorenyl group having 2 to 20 carbon atoms, preferably a 1-substituted alkoxyfluorenyl group having 4 to 18 carbon atoms, particularly preferably a carbon number of 6~ a 1-substituted alkoxyfluorenyl group of 16. For example, a cyclopentyl decyloxy fluorenyl group, a 1-cyclopentyl ethoxy fluorenyl group, a 1-cyclohexyl decyloxy fluorenyl group, a 1-cyclohexyl ethoxy fluorenyl group, a 1-cyclooctyl group A methoxymethyl group and a buckymantyl fluorenyl fluorenyl group. 20 201131300 -----rn Amendment date: March 23, 1st, is the 9S»142385 Chinese manual without a slash correction. The cyclic ether group is usually a cyclic ether group with a carbon number of 2~20. The cyclic acid group having a carbon number of 4 to 18 is particularly preferably a cyclic fluorenyl group having a hindrance of 6 to 16 = for example, tetrahydropyranyl, tetrahydrofuranyl, or tetrahydrofuranyl. Tetrahydr〇thiopyranyl, tetrahydrothiofuranyl, 4-methoxytetrahydropyranyl, and 4-methoxytetrahydropyran 4-methoxytetrahydrothiopyranyl, etc. The alkoxycarbonyl group is usually an alkoxycarbonyl group having 2 to 20 carbon atoms, preferably an alkoxycarbonyl group having 4 to 18 carbon atoms, and particularly preferably having a carbon number of 6 to 16. The alkoxycarbon group may, for example, be a methoxycarbonyl group, an ethoxycarbonyl group, a n-propoxy group, an isopropoxycarbonyl group, a n-butoxycarbonyl group, a third butoxycarbonyl group or the following formula. (9) an acid dissociable functional group represented by n = 0. The alkoxycarbonylalkyl group is usually an alkoxy group having a carbon number of 2 to 20 It is preferably an alkoxycarbonylalkyl group having 4 to 18 carbon atoms, more preferably an alkoxycarbonylalkyl group having 6 to 16 carbon atoms, and examples thereof include a decyloxycarbonylmethyl group and an ethoxycarbonylmethyl group. An n-propoxycarbonylmethyl group, an isopropoxycarbonyl fluorenyl group, a fluorenyl n-butoxycarbonyl fluorenyl group, or an acid dissociable functional group represented by n = 1 to 4 of the following formula (9). ] 21 201131300 is the Chinese manual of No. 9142385 without a slash correction Amendment date: March 23, 100 (in the formula (9), 'R2 is hydrogen or a linear or branched alkyl group having a carbon number of 1 to 4, and η is an integer of 0 to 4.) The acid dissociable functional groups Preferred are substituted fluorenyl, 1-substituted ethyl, 1-substituted alkoxymethyl, cyclic ether, alkoxycarbonyl, and alkoxycarbonylalkyl, substituted fluorenyl, 1-substituted ethyl The alkoxycarbonyl group and the alkoxycarbonylalkyl group are more preferably high in sensitivity, and more preferably have a cycloalkane, a lactone, and a carbon selected from the group consisting of a reciprocal number 3 to I2. An acid dissociable functional group of a structure in the number of 6 to 16 aromatic rings. The number of the ring-shaped hydrocarbons may be a single ring or a polycyclic ring, but more preferably, it may be exemplified by monocyclic hydrocarbons, bicyclic hydrocarbons, triweines, tetracyclohexanes, and the like. , 兀 丁 butyl butane pentane, isobornane, tricyclo 2 3 nonane, norbornane (n 〇 〇 〇 ane ane 、 、 、 、 、 、 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Ring-burning hydrocarbon tricyclodecane. The carbon number 3 to ruthenium, tetracyclic Wei, particularly preferably adamantane, butyrolactone or If%, a cycloalkane may have a substituent. The lactone can be in the inner surface of the carbon number of the base. Carbon number 22 201131300" For the first Η2%5 Chinese manual without a slash correction This revision date: March 23, 2013, 6~16 aromatic ring can be cited as benzene ring, naphthalene ring And an anthracene ring, a phenanthrene ring, a pyrene ring, etc., preferably a benzene ring or a naphthalene ring, particularly preferably a naphthalene ring. In particular, it is selected from the group represented by the following formula (10). The acid dissociable functional group in the composed group is preferred because of its high resolution. (10) (In the formula (10), R6A is a hydrogen atom or a carbon number i~4 linear or 23 201131300 is the $9142385 Chinese manual without a slash correction. Amendment date: March 23, 1 branch An alkyl group, R6 is a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, a cyano group, a nitro group, a heterocyclic group, a hydroxyl atom, a carboxyl group, 1^ is an integer of 0 to 4, and n2 is 1~ In addition, the acid dissociable functional group R1 may include a repeating unit represented by the following formula (11) and the following formula, as long as the acid dissociable functional group R1 does not impair the effects of the present invention. (12) or a substituent of the terminal group represented by R1 (R1 is the same as the above). [Chem. 13] [Chem. 14] In the formula (11) and/or the formula (12), R1 is the same as described above. L is the same as above, and is preferably a single bond, an anthracene group, an ethyl group or a carbonyl group. Multiple Qs may be the same or different. N5 is an integer of 0 to 4, n6 is an integer of 1 to 3, X is an integer of 0 to 3, and satisfies lSn5 + n6S5. Multiple n5, n6, X 24 201131300^ JKJ I is the 99M2385 Chinese manual without a slash correction. The revised period: 100 years March 23 曰 o The same ^ can be different. R3 is selected from the group consisting of a halogen atom, a silk, a cyclodecyl group, a f group, an alkoxy group, an aryloxy group, an alkenyl group, a decyl group, an alkoxycarbonyl group, a &quot;based aryl group, an aryl acid group oxy group, a cyano group And a substituent in the group consisting of nitro groups. (4) The atom publishes chlorine atoms, ligaments, and honest atoms; the stimuli may be methyl, ethyl, propyl, n-propyl, n-butyl; "the number of carbon atoms such as butyl hydrazine, butyl, etc." Examples of the alkyl group; the cycloalkyl group may be a cyclohexyl group, a norbornyl group, an adamantyl group or the like; and the aryl group may be phenylxylyl (tolyi), xylyl (xylyl), naphthyl () o or the like; Aromatic filaments can be carved, M-based, di-hoc, etc.; alkoxy groups can be exemplified by methoxy, ethoxy, ethoxypropyl, propoxy, propyloxy, isopropoxy, positive An alkoxy group having 1 to 4 carbon atoms such as an oxy group, an isobutoxy group, a second butoxy group or a second butoxy group; an aryloxy group; and a phenoxy group; and an alkenyl group; An alkenyl group having 2 to 4 carbon atoms such as an allyl group, an allyl group or a butenyl group; and an anthracenyl group; an anthracenyl group, an ethyl fluorenyl group, a propyl fluorenyl group: a butyl group, a pentyl group, an isovaleryl group, a pentylene group An aliphatic fluorenyl group having a carbon number of 丨~6, and an aromatic fluorenyl group such as a benzamidine group or a t〇lu曱醯yl group; an alkoxycarbonyl group may be an anthraceneoxycarbonyl group or a Oxycarbonyl, C Alkoxycarbonyl group having 2 to 5 carbon atoms such as a carbonyl group, an isopropoxycarbonyl group, a n-butoxycarbonyl group, an isobutoxycarbonyl group, a second butoxycarbonyl group or a third butoxycarbonyl group; The oxy group may, for example, be an ethoxycarbonyl group, a propyl fluorenyloxy group, a butenyloxy group, an isobutylphosphonium pentyloxy group, an isoamyloxy group or a pentyloxy group; The benzoinyloxy group or the like may be mentioned. A plurality of R3's may be the same or different. In the present invention, the acid dissociable functional group means in the presence of an acid 25 201131300. Revision period: March 23, 100 ^ &quot The Chinese manual of I42385 has no slash correction, and the test results are based on the characteristic base of the '!! base. The soluble base can be enumerated as a promiscuous base, a rebel base, a Weiji, a hexa-isopropanol group, etc. It is preferred that it is a phenolic property, and it is a phenolic property. In order to form a higher sensitivity resolution, the above-mentioned hetero-functional residual material has a property of causing a crack reaction in a chain in the presence of an acid. (1) The compound (4) represented is a group selected from the group consisting of the aromatic compound Uii) The above-mentioned and above-mentioned (A12) condensation reaction is carried out, and then the acid dissociating agent is reacted to obtain. This soil is ordered into: 香 碳 碳 碳 香 香 香 香 香 香 香 香 香 香 香 香 香 香 香 香 香 香 香 香 香 香 香Examples of the substance can be exemplified by: benzyl m benzophenone, phenyl benzoic acid, ethyl benzophenone, propyl benzophenone, butyl benzophenone, acetonitrile formaldehyde, isopropyl methyl benzaldehyde, diethyl Benzoaldehyde, phenanthrene; nasddehyde), naphthaldehyde, anthrolaldehyde, cyclopropyl benzoate, cyclobutane 1 benzoyl, cyclohexan (tetra), phenylbenzene (tetra), naphthylbenzene (4) U-form base norbornene-based benzophenone, emulsified base benzophenone peak tyl), isopropyl benzophenone, n-propyl benzoyl I desert benzoyl-methylaminobenzamide, trans-benzoic acid and dijing Benzophenone, etc., preferably propylbenzene (tetra), butyl benzoate, benzene (four), cyclohexidine #phenylbenzoic acid 'better propyl benzoic acid, butyl benzoate: cyclohexyl benzene Plate and phenyl benzoquinone, especially for listening to benzoquinone (four) and ring hexane ^ = acid. The aromatic-based compound (Αιι) can be used without damaging the dryness of the present invention. _ The linear or branched yarn having a carbon number of 丨~4 is used. The 201131300 is the 99142385 Chinese manual without secant correction. The repair period: 1〇 March 23, 曰 base, dentate atom, etc. The ruthenium group-based compound (AU) may be used singly or in combination of two or more. —1—(Α12), benzophenone, ortho-catech®, resorcinol, hydroqumone, or pyrogallol (pyr〇) which may have a substituent described later Gall〇1) Substituting benzene, meta-phenylene, ortho-benzene, more preferably iso-benzene ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί A straight or branched wire having a carbon number, a cyclic alkyl group having a carbon number of -20, an aryl group having a carbon number of 6 to 2 Q, a cyano group, a thiol group, and the like. The expectant class (A12) may be used singly or in combination of two or more kinds: 化合物 The compound represented by the above formula (1B) may be a known one. For example, by organic solvent of methanol and ethylene, with respect to the aromatic carbonyl compound (M〇i Mo, Q) Moer ~ 1 () Mo amount _ (A12), acid catalyst (hydrochloric acid, sulfuric acid or Toluenesulfonic acid, etc., in the shame: 1 paper under the reaction 〇. 5 hours ~ 2 (H, around, after filtration, washed with methanol, washed with water, separated, refined and obtained. It can be obtained by using the secret _ (hydrogen oxychloride, diazabicyclo [5A0] dec-ene -7, etc.) instead of _media, _ ground_ reaction. Further, the compound of the above formula (1B) is also The above aromatic carbonyl compound (AU) may be made into a dihalide by a hydrogen halide or a halogen gas, and then the mono-derivative is reacted with _ (A12). ～ The compound (A) is at least one age of the compound (8). Sexuality 27 201131300 is the first Chinese manual of No. 42385 without a slash correction. This amendment is obtained by introducing an acid dissociable functional group on the base of March 23, 100. In the compound (B), at least one phenolic hydroxyl group or A method of introducing an acid dissociable functional group on a carboxyl group is known, for example, as described below, in the compound (B) The at least one phenolic hydroxyl group or the carboxyl group is introduced with an acid dissociable functional group. The compound for introducing an acid dissociable functional group (acid dissociable functional group introducing reagent) can be synthesized or easily obtained by a known method, for example, The active acid derivative compound such as a halogen, an acid anhydride or a dicarbonate is not particularly limited as long as it is an alkyl halide, a vinyl group, a dihydropyrane or a halogenated acid. The isolated white solid is washed with distilled water to obtain a compound (A). For example, the compound (B) is dissolved in an aprotic solvent such as acetone, tetrahydrofuran (THF) or propylene glycol monomethyl ether acetate, and suspended. Adding a vinyl alkyl ether such as ethyl vinyl ether or dihydrofuran in the presence of an acid catalyst such as acridine sulfonate rust or the like, and reacting at normal pressure at 20 C to 60 C for 6 hours~ After 72 hours, the reaction solution was neutralized with an inert compound, and then added to steamed crane water to precipitate a white solid, which was then dried to obtain acetone, THF, and propanol monomethyl. Aprotic ester and other aprotic The isolated white solid is washed with distilled water, and added with a self-generation carboxy pressure of ethyl ester or the like, at 20 ° C. After being precipitated with an acid such as hydrochloric acid, it is washed, dried, and thereby obtained. 28 201131300 Period: March 23, 1st, is the Chinese manual of No. 99142385 without a slash correction of the compound (Α). More preferably, two or more aromatic compounds (An) are used. By using two or more kinds of aromatic carbonyl compounds (A11), the solubility of the obtained cyclic compound in a semiconductor safe solvent is improved. The compound represented by the above formula (1A) has a molecular weight of 99 〇 29 29 (9), preferably 1 〇 4 〇 to 265 Å, more preferably 1 〇 8 〇 to 24 〇〇, and particularly preferably 11 刈 to = 00. The molecular weight of the compound represented by the above formula (1B) is from 〜 to 750, preferably from 840 to 1750, more preferably from _ to □. If it is in the above range, the properties of the photoresist material can be maintained, and heat resistance can be achieved. The compound (a) represented by the formula (1A) is preferably a compound represented by the formula (2A).歹] Lift down [Chem. 15] (ZA) Side 1 is 1~ or inverse 4 to 29 201131300 is the Chinese version of the "I42385" without a slash correction. Amendment date: March 23 of the following year P is the same as above. (A) It is more preferred that the compound is an acid dissociable functional group, and R1, R4 and the compound represented by the above formula (1A) are compounds represented by the formula (3A). [Chemistry 16] (SA) (In the formula (3A), R2 is a substituted methyl group selected from a hindered number 3 to 20, a substituted methyl group having a carbon number of 4 to 2 to 20, a U-branched fluorenyl group having a carbon number of 3 to 2 G, and carbon. The acid-dissociable functional group in the group consisting of a plurality of/substituted-n-propyl groups, a dressing earth, an alkoxycarbonyl group having 2 to 20 carbon atoms, and an alkoxycarbonylalkyl group, χ and ρ are the same as described above. 2 R The compound (a) represented by the above formula (1A) is particularly preferably a compound represented by the following formula (4A). [化17] 30 201131300. For the Chinese manual No. 99142385, there is no slash correction. Amendment date: March 23, 1 (4A) (In the formula (4A), R2, R4, and p are the same as those described above.) The compound (A) represented by the above formula (1A) is particularly preferably a compound represented by the following formula (5A). [Chem. 18] (In the formula (5A), R2 is the same as above.) The compound (B) represented by the above formula (1B) is preferably exemplified by 31 201131300 jtmypm is the 99142385 Chinese specification without a sizing correction. The compound represented by the formula (2B) on March 23 of the following year. [Chem. 19] (2B) (In the formula (2B), X is a hydrogen atom or a halogen atom, 1^ is an integer of 1 to 4, m2 is an integer of 0 to 3, 11^ + 1112 = 4, and R4 and p are the same as described above. The compound (B) represented by the above formula (1B) is more preferably a compound represented by the following formula (3B). [化 20] 32 201131300 l yVln is the 99142385 Chinese manual without a slash correction. Amendment date: 10 () March 23 In the formula (3B), mi, R4, and p are the same as those described above. The compound (B) represented by the above formula (1B) is preferably a compound represented by the following formula (4B). [Chem. 21] (4 B) 33 201131300 For the Chinese manual No. 142385, there is no slash correction. This revision date: March 23, 100 (in the formula (4B), 'R4, p are the same as above. The above formula (1B) shows Compound (b) is a compound represented by the formula (5B). It is particularly preferable that the f film has high heat resistance and is amorphous, so that it is excellent in resistance, and the swelling property is inferior to the dissolution property of the developer, and is preferably used as a photoresist material, particularly a photoresist material. The second generation = the aspect of manufacture, it can also be dehydrated and condensed by non-golden medium such as aromatic = hydrochloric acid, which is manufactured in the industry, and acid or amine is not the golden chest medium to make the industrially produced acid dissociation. Its ^. The human body is reacted in four doses, and is produced in a high yield. Therefore, the practicality of the film forming compound (Β) is high in heat resistance and amorphous, so that the two properties are ', good, and not sublimate, alkali The solubility of the developer is only suitable for the photoresist. In particular, it is used as a photoresist material, especially the main component of the photoresist. 34 201131303⁄4 is the Chinese text of No. 142385 without a slash correction. 23 days (substrate). In addition, various aldehydes represented by industrially produced aromatic aldehydes, and phenols such as resorcinol and pyrogallol can be used as a raw material by a non-metal catalyst such as hydrochloric acid. The dehydration condensation reaction is carried out, and it is produced in a high yield, so that the practicality is also extremely excellent. In order to reduce the amount of residual metal of the compound (A) or the compound (B), purification may be carried out as needed. Further, when the acid catalyst remains, the storage stability of the positive-type radioactive composition is generally lowered, or if the basic catalyst remains, the sensitivity of the positive-sensing radioactive composition is lowered, so that the above-described Reduce the purification for the purpose. When the compound (A) or the compound (B) is not modified, the purification can be carried out by a known method, and is not particularly limited, and examples thereof include a method of washing with water, a method of washing with an acidic aqueous solution, and washing with an alkaline aqueous solution. A method of treating with an ion exchange resin, a method of treating with a gel column chromatography, and the like. These pure = methods are more preferably carried out in combination of two or more. The acidic aqueous solution, the aqueous solution, the ion exchange resin, and the gel column chromatography may be depending on the amount or type of the metal, the acidic compound, and/or the basic compound to be removed, the type of the dissolved inhibitor to be purified, and the like. Choose the best method as appropriate. Example ^ 'The acidic aqueous solution can be exemplified by a salt of 〇·〇1 m〇1/L~1〇, a nitric acid, an aqueous solution of acetic acid, and an alkaline aqueous solution, which can be enumerated as a concentration of 〇〇1 i^ol/L~1 The ammonia aqueous solution of 〇m〇1/L, and the ion exchange resin may, for example, be a cationic parent-replacement resin, for example, Amberlyst 15J hg Dry manufactured by Øgan〇. It can be dried after purification. Drying can be carried out by a known method, and is particularly limited to ^, and the scale can be modified in the compound (4) or the compound (B). 35 201131300 Revision date: H) G, March 23, No. 991423S5 Under the conditions of this, vacuum drying, hot air drying, and the like are carried out. The compound (A) and the compound (B) in the present invention may be in the form of a cis form or a trans form, and may be any structure or mixture. In the case of using a photoresist component as a radiation-sensitive composition, a compound having only a Ι 构 structure of any of a cis-form and a trans-form is a pure compound, and a component of the photoresist film has high uniformity, which is preferable. The method of obtaining a cyclic compound having only one of a cis form and a trans form can utilize a reaction solvent and a reaction temperature at the time of separation or production by column chromatography or preparative liquid chromatography. A well-known method such as optimization. ▲ The glass transition temperature of the compound (Α) and the compound (Β) in the present invention is preferably 10 ° C or more, more preferably 12 ° C or more, and particularly preferably 140. Above 〇, especially better than 150 °c. When the glass transition temperature is within the above range, heat resistance can be maintained in the pattern lithography process, and high resolution and the like can be imparted. The crystallization heat generation amount of the compound (A) and the compound (B) in the present invention which is obtained by differential scanning calorimetry of glass transfer μ is preferably = 20. J/g. Further, (crystallization temperature) _ (glass transition temperature) is preferably 耽 or more, more preferably 80 ° C or more, and particularly preferably 1 Torr. (: Above, particularly good, 130. 〇 or more. If the crystallization heat is less than 2 〇J/g, or (crystal 匕 acidity) - (glass transition temperature) is within the above range, the coating feeling can be rotated In the present invention, the crystallization heat, the crystallization temperature, and the glass transfer degree can be used in Shimadzu. The DSC/TA_50WS manufactured by the manufacturer is based on the following 36 201131300 ~J\J il Revision date: 1GQ March 23rd is the 99142385 Chinese manual No picture 丨 i line correction This method is obtained by measurement and differential scanning calorimetry Put about 1 〇 material into aluminum unsealed container 10, and raise it to a bright point above 20 〇C/min in a nitrogen stream (50ml/min). After quenching, again in nitrogen production (30ml /min) W heating rate chat - warming up to the bright point to = and after quenching, again in the nitrogen stream (3 〇 ml / min) to increase the temperature of 20 °c / min to 400 °. 〇. will appear on the baseline The midpoint of the zone ^ of the continuous part (the specific heat change is - half) The degree of the glass transition temperature (Tg) and the temperature of the heat generation peak appearing thereafter are taken as the crystallization temperature. The calorific value is determined as the crystallization heat amount based on the area of the region surrounded by the heat generation peak and the baseline. (A) and the compound (B) are preferably at most 1 Torr (r, preferably 120 or less, more preferably 13 (TC or less, particularly preferably 14 (rc or less, particularly preferably 150). 〇C or less, sublimation is low. The so-called sublimation is low. Preferably, in the thermogravimetric analysis, the weight loss at a predetermined temperature for 1 minute is 10%, preferably 5%, more preferably 3%. It is particularly preferably 1%, particularly preferably 0.1% or less. Due to the low sublimation property, contamination of the exposure device caused by external gas enthalpy during exposure can be prevented. In addition, it can be provided by line edge roughness (LER) at a low line edge. a good pattern shape. The compound (A) and the compound (B) preferably satisfy f &lt; 3. 〇 (F represents the total number of atoms / (total number of carbon atoms - total number of oxygen atoms)), more preferably F &lt; 2.5. By satisfying the above conditions, the dry button resistance is excellent. Compound (A) and chemical The compound (B) is selected from the group consisting of propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (propylene glyc〇1 m〇nomethyi ether, 37 201131300 revised period: March 23, 100 The Japanese manual No. wi42385 has no underline correction PGME), cyclohexanone (cyclinhexan〇ne, CHN), cyclopentanone 'CPN), 2·heptanone, anisole, butyl acetate, Among the solvents which exhibit the highest solubility in the compound (A) and the compound (B), it is preferably i wt dissolved at 23 ° C in the solvent of ethyl benzoate and ethyl iactate. More than %, more preferably 5 wt% or more, and particularly preferably 10 wt% or more, particularly preferably selected from the group consisting of pGMEA and pGME CHN, and exhibiting the highest dissolving power in the ruthenium (A) and the compound (B). In the solvent 'at 23. (The dissolution is 2% by weight or more. By satisfying the above conditions', the usability can be improved in the semiconductor manufacturing step in actual production. L疋 can be used in the range of not impairing the effects of the present invention. The non-acid dissociable functional group is introduced into the aging group and/or the slow group of B). The non-acid dissociable functional group refers to a characteristic group which does not crack in the presence of an acid and does not generate an alkali-soluble group. The ring of C1~20. group, C3~2〇 which is decomposed by the action of an acid, the ring of the C3~2〇, the alkoxy group of C1~2〇, the aryl group, the nitro group, the thiol group, the hetero-S group _, C1~2G pyrolysis base, functional groups in the group consisting of the butyl organisms of these groups, etc. «it compound (A) and compound (8) can be rotated by coating method Yang film. In addition, it can be applied to the usual semiconductor manufacturing process. The Hert (four) sand-sensing radioactive composition can be formed by the method of fascinating the bluffing method = 睹 本 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The dissolution of 2.38 _TMAH aqueous solution is 5 A/Sec or less, more preferably 0.05 A/Sec~5 human/sec 'You 38 20113 1300 ____Α”A is the Chinese manual of No. 142385. There is no slash correction. The date of this revision is March 5, which is 0.0005 person/sec~5 person/sec. If the dissolution rate is 5 A/sec, it is insoluble in alkali. In the developer, it can be used as a photoresist. In addition, if it is not a b-film and has a dissolution rate of 0.0005 person/sec or more, the resolution is high. It is presumed that it is due to the exposure of the cyclic compound. The solubility change of = is such that the contrast between the unexposed portion dissolved in the alkaline developing solution and the exposed portion which is not dissolved in the alkaline developing solution becomes large. Further, the effect of reducing the LER and reducing the defect is obtained. The portion of the amorphous film formed by spin-coating the solid content of the positive-sensing radioactive composition of the present invention, which is exposed by radiation such as KrF excimer laser, extreme ultraviolet ray, electron beam or X-ray, is exposed to 23 〇c. The dissolution rate of the 2 38 wt% TMAH aqueous solution is preferably 1 〇 person / qing or more, more preferably 10 ° person &amp; (: ~ 1 〇〇〇〇 person / like ' Especially good for 1 〇〇 person / muscle ~1〇〇〇人/咖. If the dissolution rate is 10 people/sec or more, it will dissolve. In the alkaline developing solution, a photoresist is formed. Further, when the portion exposed to the right has a dissolution rate of 10,000 persons/sec or less, the resolution is improved. It is presumed that the cause of the above-mentioned cyclic compound is small. The surface portion is dissolved to lower the LER. In addition to Q, there is a defect reducing effect. The positive-type radioactive composition of the present invention comprises 1 wt% to 8 wt% of a solid component and 20 wt% to 99 wt% of a solvent. Preferably, it is 1 wt% to 5 〇 wt% of the solid component and 50 wt% to 99 wt% of the solvent, particularly preferably 2 wt% to 40 wt% of the solid component and 60 wt% to 98 wt% of the solvent, particularly good It is a solid component of 2 wt% to 1 wt% and a solvent of 90 wt% to 98 wt%. The sum of the weight of the above compound (A) and the weight of the compound (B) is 39 201131300 —&gt; J Λ. ^ X Λ. JL is the Chinese name of the first place No. Dirty correction This revision date: 1_month 23 From 50 wt% to 99 wt% of the total weight of the daily solid component, preferably 65 plus 0/〇, preferably more than 6 Gwt% to 7 Qwt%. If it is the above-mentioned blending ratio, the resolution is still the same, and the line edge coarse rotation becomes smaller. Further, the acid generator (C) is preferably at least one selected from the group consisting of compounds represented by the following formulas (7) to (7j). (In the formula (7-1), 'R13' may be the same or different, and each independently is a hydrogen atom, a linear, branched or cyclic alkyl group, a linear or branched cyclic alkoxy group, a hydroxyl group or a halogen. An atom; X- is a sulfonic acid ion halide ion having an alkyl group, an aryl group, a halogen-substituted alkyl group or a halogen-substituted aryl group.) The compound represented by the above formula (7-1) is preferably selected from the group consisting of At least one of the following groups consisting of: triphenyl sulfonium trifluoromethane sulfonate, triphenyl sulfonium trifluoromethane sulfonate, diphenylmethyl sulfonium sulfonate _ n-butane sulfonate: 40 201131300 JVJ / 1 Revision date: March 23, 100 is the Chinese manual of "142385" without a slash correction of the diphenyl fluorene perfluoro-n-octane sulfonate, diphenyl _4_Methylphenylphosphonium trifluoromethane hydrochloride, di-2,4,6-dianonylphenyl chloride, trifluoroindole 4 acid, diphenyl ice, second butoxyphenyl pin Fluorinated acid salt, diphenyl_4_t-butoxyphenyl sulphide hexafluoro-n-butyl, diphenyl _4_ benzophenonic acid, (4-1 phenyl M- Phenylphenyl Sodium sulphate, diphenyl hydroxy phenyl shovel, nonafluoro-n-butane sulfonate, bis(4-hydroxyphenylphenyl fluorene trifluoromethane hydrochloride, bis(4-anthraceneoxy) L) trifluoromethane hydrochloride, tris(4-fluorophenyl)phosphonium triflate, triphenylsulfonium terephthalate, triphenylsulfonate, one base -2,4,6-trimethylphenyl-p-benzoate, diphenyl-2,4,6-dimercaptopurine-2-trifluorodecyl benzoate, II Phenyl 2,4,6-diindole basic 4-pyridyl-4-trifluoromethyl phthalate, diphenyl-2,4,6-tridecylphenyl fluorene-2,4-difluorobenzene sulfonate Acid salt, diphenyl-2,4,6-trimercaptophenylphosphonium hexafluorobenzate, monophenylnaphthyl anthracene trisodium citrate, diphenyl _4_ via basic hydrazine Toluene orthoate, triphenyi sulfonium l〇-camphor sulfonate, diphenyl-4-phenylphenyl sulfonium 10-camphorsulfonate and ring (1,3) -Perfluoropropane disulfonate quinone imine. 〇[Chemistry 24] (In the formula (7-2), R14 may be the same or different, and each independently represents the table 41 201131300 jo/丄ypiii Revision date: March 23, 2003 is the 99142385 Chinese manual without a slash correction of the hydrogen atom 'money a linear, branched or cyclic alkoxy group, via a base or a veneer atom. χ_ is the same as above.) The compound represented by the above formula (7-2) is preferably selected from the group consisting of At least one species of group towels consisting of: bis(4_t-butylphenyl)cone triflate, bis(4-secondbutylphenyl)nonafluoro-n-butylsulfonate Acid salt, bis(4-secondbutyl strepyl) fluorene perfluoro-n-octyl sulphate, bis (4_t-butylpyrazine benzopyrene, bis (4-third) Butyl phenyl) fluorene xanthate ^ bis ^ dibutyl phenyl) guanidin-2-difluorodecyl benzoate, bis (4_t-butylphenyl) 鎭-4-III Fluoromethylbenzenesulfonate, bis(4_t-butylphenyl)phosphonium-2,4-difluorophene salt, bis(4-secondbutylphenyl)phosphonium hexafluoroate, double (Heart second butyl phenyl) 錤 1 〇 樟 樟 续 g g g (four), diphenyl sulfonium trifluoromethane hydrochloride, diphenyl iron nine gas - positive Continuous acid salt, diphenyl sulfonium total gas n-octane sulfonate, diphenyl sulfonium terephthalic acid sulfonate, diphenyl sulfonium benzene sulfonate, diphenyl hydrazine 10 hydrazine salt, one base镌_2_Trifluoromethyl benzoate, diyl fluorene-4-trifluoromethyl benzene salt, diphenyl oxa 2,4-difluorobenzene hydrochloride, diphenyl sulfonium hexafluorobenzene Acid salt, bis(4-trifluoromethylphenyl)phosphonium trifluorosulfate, mono(4-difluoromethylphenyl)phosphonium hexa-n-butyrate, bis(4) two-bond, fluorenyl Phenyl)phosphonium per-n-octanoate, bis(4-trifluoromethanesulfonate)-benzenesulfonate, bis(4-trifluorodecylphenyl)sulfonate, and Heart trimethyl phenyl) 锵 10 - camphor sulfonate.一气 [化 25] 42 201131300 -JL- The Chinese manual for the 99142385 has no underline revision (7-3) Date of revision: March 23, 100 (in the formula (7-3), 'Q is Shinsuke, Shin-Fang #为丝,芳基'«Substituted alkyl or dentate = aryl. ) The compound represented by the above formula (7-3) is preferably at least one selected from the group consisting of the following: a group (trifluoromethylbis-oxysuccinimide, N-(three) Fluoromethylsulfonyloxy) phthalimide, N-(trifluoromethylsulfonyloxy)diphenylbutyleneimine, group (trifluoromethylsulfonyl) Oxy)bicycloalkenyl 2,3-dicarboxy quinone imine, N-(difluorodecylsulfonyloxy)naphthyl quinone imine, N_(1〇_ camphorsulfanyloxy) succinic acid Imine, N-(10-camphorinyloxy) phthalimide, N-(l〇-樟 brain glanyloxy)diphenylmethylenebuteneimide, 1〇_ rod brain sulfonyloxy)bicyclo[2.2.1]hept-5-oxime-2,3-dicarboxy quinone imine N-(10-camphorsulfonyloxy)naphthyl quinone imine , N_(n-octylsulfonyloxy)bicyclo[2.2.1]hept-5-indole-2,3-di-trans-acid imine, N-(n-octanoyloxy)naphthyl , N-(p-toluenesulfonyloxy)bicyclo[2.2.1]hept-5-female-2,3-dicarboxyindenine, N_(p-phenylenesulfonyloxy)naphthylquinoneimine , N-(2-trifluoromethylbenzenesulfonyloxy)bicyclo[2 2 1;|hept-5-ene-2,3_ Diterpenoid, N-(2-trifluoromethylbenzenesulfonyloxy)naphthylimine, n_(4-trifluoromethylsulfonyloxy)bicyclo[2 21]g 5_ene_2,3_dicarboxyfluorene 43 201131300 l Λ. ^ X ^ is the 99142385 Chinese manual without a slash correction. Amendment date: March 23, 100, imine, N-(4-trifluoromethane Benzene hydrazinyloxy)naphthyl quinone imine, N_(perfluorophenyl decyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxy quinone imine, N-( Perfluorobenzenesulfonyloxy)naphthylimine, n-(i-naphthalenesulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyindenine, N -(l-naphthalenesulfonyloxy) carbamic acid imine, N-(nonafluoro-n-butyl fluorenyloxy)bicyclo[2·2·ι]hept-5-ene-2,3-di Carboxylimine, fluorene-(nonafluoro-n-butylsulfonyloxy)naphthylimine, fluorene-(perfluoro-n-octylsulfonyloxy)bicyclo[2 2 ^g: osmotic dicarboxyl醯imine and Ν-(perfluoro-n-octylsulfonyloxy)naphthyl quinone imine. [Chem. 26] Ο Ο ο ο (7 — 4 ) One (in Equation (7-4), Ri6 may be the same Alternatively, they are independently linear, branched or ring-shaped, which are replaced by Rensi. An optionally substituted aryl group, a substituted heteroaryl group or an optionally substituted sodium group.) The compound represented by the above formula (7-4) is preferably at least one selected from the group consisting of the following compounds. Diphenyl disulfone (d-dlSUltne), bis(4-nonylphenyl) disulfone, dinaphthyl difluorene, bis(4-tert-butylphenyl)-sulfone, di(4-hydroxyl) Phenyl)disulfone, bis(&gt;hydroxynaphthyl)dipsite, bis(4-fluorophenyl)di-roll, bis(2-fluorophenyl)dragon, and bis(4-trisylbenzene) Base) two. [化 27] 44 Revision date: March 23, 1st, the Chinese manual No. 1 without a slash correction (TS) 20113130^ (In the formula (7-5), rh may be the same or different, and each independently is an optionally substituted linear, branched or cyclic alkyl group, optionally substituted aryl group, optionally substituted a heteroaryl group or an optionally substituted aryl group.) The compound represented by the above formula (7-5) is preferably at least one selected from the group consisting of α_(methylsulfonyloxy group) A-(methyl sulfonyloxy imino)-phenyl acetonitrile, a-(methylsulfonyloxyimino)-glycolyloxyphenyl bromide (ot_(methyl sulfonyloxy imino) -4-methoxy phenyl acetonitrile), a-(trifluoromethyl sulfonyloxy imino)-phenylacetonitrile, a-(trifluoromethylsulfonyl) A-(trifluorometliyl sulfonyloxy imino) 4-methoxyphenyl acetonitrile, a-(ethyl sulfonyloxyimino)-4-methoxy A-(ethyl sulfonyloxy imino)-4-methoxy phenyl acetonitrile, α-(propyl fluorescein oxyimino)-4-methylbenzene A-(propyl sulfonyloxy imino)-4-methylphenylacetonitrile and a-(methyl sulfonyloxyimino)-4-hydroxyphenylacetonitrile (a-(methyl sulfonyloxy imino)-4-bromophenyl Acetonitrile). [化 28] 45 201131300 is the Chinese manual of the paragraph &amp;142385 without a slash correction Amendment date: March 23, 2013. In the formula (7-6), R18 may be the same or different, and is independently a halogenated alkyl group having one or more chlorine atoms and one or more bromine atoms. The halogenated alkyl group preferably has 1 to 5 carbon atoms. [化29] 46 201131300 J\J/ l^plfl is the Chinese manual of No. 99M2385. There is no slash correction. This revision date: In March 23, 100 (7-7) and (7-8), R19 and R20 are independently A group such as a methyl group, an ethyl group, a n-propyl group or an isopropyl group which has an atomic number of 1 to 3, a cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, and a carbon number such as a decyloxy group, an ethoxy group or a propoxy group. The alkoxy group of 1 to 3 or an aryl group such as a phenyl group, a tolylmethyl group or a naphthyl group is preferably an aryl group having 6 to 10 carbon atoms. L19 and L2G are each independently an organic group having 1,2_2-naphthoquinoiie diazido. Specific examples of the organic group having a 1,2-naphthoquinonediazide group include quinonediazide-4-sulfonyl group, 1,2-naphthoquinonediazide _5_thenyl group, anthracene, and 2-naphthoquinone. The 1,2_醌diazide fluorenyl group such as Erfeng nitrogen-6-continuation sulfhydryl group is a preferred organic group. Particularly preferred are 1,2-naphthoquinonediazide-4-sulfonyl and L2-naphthoquinonediazidesulfonyl. p is an integer of 1 to 3, q is an integer of 〇4, and gp + qg. J19 is a single bond, a polyarylene group having a carbon number of i to 4, a cycloalkyl group, a phenyl group, a group represented by the following formula (7-7-1), a benzyl group, a acetamide group, a decylamine group. Shout, Y19 is a hydrogen atom, a pyridyl group or an aryl group, and χ2〇 is independently a group represented by the following formula (7-8-1). [化31] 〇 [化32] 47 201131300 jo/iypm = No correction for the Chinese manual No. 99142385 Revision date: March 23, 100 (In the formula (7-8-1), Z22 is independently an alkyl group, a cycloalkyl group or an aryl group, R22 is an alkyl group, a cycloalkyl group or an alkoxy group, and r is an integer of 0 to 3.) The acid generator may be exemplified by bis (p-benzoquinone) diazonium tritium (汾8 (卩-比1\^116 3111£〇1171) (^&amp;2011161;1131^), double (2,4) - Dimercaptophenylsulfonyl)diazononane, bis(t-butylsulfonyl)diazomethane, bis(n-butylsulfonyl)diazepine, bis(isobutylsulfonate) Diazomethane, bis(isopropyl decanoic acid) diazonium triazole, bis(n-propyl fluorescein) diazo-methyl, bis(cyclohexylsulfonyl)diazononane, double (iso) Propylsulfonyl)diazomethane, 1,3-bis(cyclohexyl sulfonyl azomethyl sulfonyl) propane, 1, 4-bis(phenyl fluorenyl azofluorenyl)butane, 1,6-bis(phenylsulfonylazolylsulfonyl)hexane, 1,10-bis(cyclohexyl) Dioxamethane diazonium such as sulfonyl azomethylsulfonyl) decane; 2-(4-decyloxyphenyl)-4,6-(bistrichloroindenyl)-1, 3,5- Sancha (2-( 4-methoxy phenyl)-4,6-(bis-trichloromethyl)-l,3,5-triazine), 2-(4-decyloxynyl)-4,6-(ditrichloroindenyl)-1 ,3,5-trimethoxy-phthyl-4,6-(bis-trichlorometliyl)-l,3,5-triazine), S(2,3-48 201131300- is the 99142385 Chinese manual without slash correction date of revision: March 23, 100 dibromopropyl)-1,3,5-triazine (tris(2,3-dibromopropyl)-l,3,5-triazine), three a halogen-containing triazine derivative such as (2,3-dibromopropyl)isocyanurate or the like. Among the above acid generators, an acid generator having an aromatic ring is preferred, and an acid generator represented by formula (7-1) or (7-2) is more preferred. Particularly preferred is an acid generator of the formula (7_1) or (7-2) having a sulfonic acid ion having an aryl group or a halogen-substituted aryl group, particularly preferably an acid generator having a sulfonic acid ion containing an aryl group. Particularly preferred is diphenyltridecylphenylphosphonium terephthalate, triphenylphene p-toluenesulfonate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluorocarbonate Xanthate. By using the acid generator, the LER can be lowered. The above acid generator (C) may be used singly or in combination of two or more. In the present invention, an acid diffusion controlling agent (E) having an effect of controlling the diffusion of an acid generated by an acid generating agent in a photoresist film by radiation irradiation, preventing an adverse chemical reaction in an unexposed region, and the like can be blended. Sensitive radioactive composition. The storage stability of the radioactive composition is excellent by making the shame-resolved paste (8). In addition, not only the resolution is improved, but also the line width variation of the resist pattern caused by the change of the t-time after the exposure of the electron beam before the irradiation of the electron beam, and the variation of the t-time after the exposure of the electrons, can be achieved. Extremely excellent system of money. This surface diffuses (4) agent (8) a basic compound having a nitrogen atom, a basic ruthenium compound, and an alkaline ruthenium electron beam release base bismuth complex. The _pour preparation can be used alone or in combination of two or more. The acid diffusion control side may, for example, be a nitrogen-containing organic compound, or may be modified by the use of the Japanese Patent Specification No. 49 201131300. The date of revision: The alkaline compound decomposed by exposure on March 23, 2010. The nitrogen-containing organic compound is, for example, a compound represented by the following formula (10): [Chem. 33] 31 I (10) (hereinafter referred to as "nitrogen-containing compound (1)")) a diamine compound of a nitrogen atom (hereinafter referred to as "nitrogen-containing compound (II)"), a polyamine compound or a polymer having three or more nitrogen atoms (hereinafter referred to as "nitrogen-containing compound (III)"), A compound containing a brewing amine group, a urea compound, a nitrogen-containing heterocyclic compound, and the like. Further, the above acid diffusion controlling side may be used alone or in combination of two or more. In the above formula (10), R61, R62 and R63 each independently represent a halogen atom, a linear chain, a branched or a cyclic yarn, an aryl group or an aryl group. Further, the above-mentioned alkyl group, aryl group or hetero group may not be substituted, and may be substituted by other official records. Here, the above-mentioned money-like, branched or i-shaped f-group is, for example, a county carbon number, preferably a dime. Base, with =7, exemplified by methyl, ethyl, n-propyl, isopropyl, n-butyl, butyl dibutyl, tert-butyl, n-pentyl, neopentyl, n-hexyl, 2 Less: methyl f 2-butyl (thexyl), n-heptyl, n-octyl, n-ethylhexyl, alumina, n-decyl and the like. Further, 'the above-mentioned aryl group may be a soil having a carbon number of 6 to 12', and specific examples thereof include a phenyl group, a tolyl group, a xylyl group, and a cumyl group. 50 201131300 JXJf i^pifl Revision date: March 23, 1 The Japanese manual No. 99142385 has no underline correction (_enyl), i naphthyl and the like. Further, the above-mentioned technical group may be a group having 7 to 19 carbon atoms, preferably 7 to 13 carbon atoms, and specific examples thereof include a benzyl group, a methylbenzyl group, a phenethyl group, and a naphthylmethyl group. Specific examples of the above nitrogen-containing compound (I) include n-hexylamine, n-heptylamine, n-octylamine, n-decylamine, n-decylamine, n-dodecylamine, and cyclohexylamine. Mono- (cyclo)alkylamines; di-n-butylamine, di-n-pentylamine, di-n-hexylamine, di-n-heptylamine, di-n-octylamine, di-n-s-amine, di-n-decylamine, Di(cyclo)alkylamines such as methyl-n-dodecylamine, di-n-dodecylyl, cyclohexylmethylamine, dicyclohexylamine; diethylamine, di-n-propylamine, tri-n-butyl Base amine, tri-n-pentylamine, tri-n-hexylamine, tri-n-heptylamine, tri-n-octylamine, tri-n-decylamine, tri-n-decylamine, monodecyl-n-dodecylamine, di-positive Tri(cyclo)alkylamines such as dodecylmethylamine, dicyclohexylmethylamine, tricyclohexylamine; alkanolamines such as monoethanolamine, diethanolamine, triethanolamine; aniline, N-methylaniline , n, n_, mercaptoaniline, 2-mercaptoaniline, 3-methylaniline, 4-methylaniline, 4-nitroaniline, diphenylamine, triphenylamine, μ-naphthylamine, etc. Classes, etc. Specific examples of the nitrogen-containing compound (II) include ethylenediamine, hydrazine, hydrazine, hydrazine, Ν'-tetradecylethylenediamine, hydrazine, hydrazine, hydrazine, and hydrazine (2-hydroxypropane). Ethylenediamine, tetramethylenediamine, hexamethylenediamine, 4,4,-diaminodiphenylmethane, 4,4,-diaminodiphenyl ether, 4,4, _Diaminobenzophenone (4,4'-diamin〇benzophenone), 4,4'-diaminodiphenylamine, 2,2-bis(4-aminophenyl)propane, 2_(3 _Aminophenyl)_2_(4-aminophenyl)propane, 2-(4-aminophenyl)_2_(3-hydroxyphenyl)propane, 2-(4-aminophenyl) 51 201131300 for the 99142385 No. Chinese manual, no correction, date of revision: March 23, 2013) 2-(4-hydroxyphenyl)propane, 1,4-bis[1-(4-aminophenyl)- 1-methylethyl]benzene, 1,3-bis[1-(4-aminophenyl)-1-indenylethyl] phenyl, and the like. Specific examples of the nitrogen-containing compound (III) include a polymer of a polyethylenimine, a polypropylamine, and an N-(2-didecylaminoethyl)propylamine. Specific examples of the acid group-containing compound include, for example, formamide, N-methyl formamide, and N,N-didecylguanamine (N, N). -dimethyl formamide ), acetamide, N-methyl acetamide, hydrazine, N, N-dimethyl acetamide, propionamide , benzamide, pyrrolidone, N-methyl pyrrolidone, and the like. Specific examples of the urea compound include urea, methyl urea, 1,1-dimercaptourea, 1,3-dimercaptourea, ι, ι, 3,3-tetradecyl. Urea, 1,3-diphenylurea, tri-n-butylthiourea, and the like. Specific examples of the nitrogen-containing heterocyclic compound include, for example, imidazole, benzimidazole, and 4-indolyl. Imidazole (4-methyl imidazole), 4-methyl-2-phenyl imidazole, 2-phenyl benzimidazole, etc.; pyridine (pyridine), 2-methyl pyridine, 4-methyl pyridine, 2-ethyl pyridine, 4-ethyl. 4-ethyl pyridine, 2-phenyl pyridine, 4-phenylpyridine 52 201131300 jo/ i^pifl is the 99142385 Chinese manual without a slash correction. Amendment date: 丨00 4-phenyl pyridine, 2-methyl-4-phenyl pyridine, nicotine, nicotinic acid, acid amide (nicotinic acid amide), quinoline (quinoline), 8-oxyquinoline, 8-oxyquinoline. Pyridines such as acridine; and pyrazine, pyrazole, pyridazine, quinoxaline, purine, and D bite ( Pyrrolidine), piperidine, moirpholine, 4-methylmorpholine, piperazine, 1,4-dimethyl piperazine , 1,4-diazabicyclo[2.2.2]octane (l,4-diazabicyclo[2,2.2] octane), and the like. Further, the above-mentioned test compound which is decomposed by exposure can be exemplified by the following general formula (11-1): [Chem. 34] Nickel compound represented, and the following general formula (11-2): 53 201131300 Revision date: March 23, 1 year, No. 99142385 Chinese manual without a slash correction [Chem. 35] (1 1 - 2 ) Locking compounds, etc. In the above formulae (11-1) and (11-2), r71, r72, r73, R and R each independently represent a hydrogen atom, a carbon atom having a carbon number of i to 6, and a oxy group having 1 to 6 carbon atoms. , thiol or _ atomic atom - indicates swelling (10), = in the 'R table - showing the carbon number of the carbon number 6, the aryl group of carbon number 6 or the alkaryl number of 1 to 6 or The following formula: [Chem. 36] The anion indicated. Specific examples of the above-mentioned test compound decomposed by exposure include, for example, diphenylphosphonium hydroxide, triphenyl acetoacetate, triphenylsulfonium salicylate, and diphenyl-4-hydroxybenzene. Based on hydroxide, diphenyl-4-hydroxybenzene 54 201131300 is the Chinese manual of "142385" without a slash correction. The revised period: March 23, 100 based on acetate, diphenyl-4- Hydroxyphenyl hydrazine salicylate, bis(4_t-butylphenyl)phosphonium hydroxide, bis(4-t-butylphenyl)phosphonium acetate, bis(4_t-butylphenyl) Barium hydroxide, bis(4-tert-butylphenyl)phosphonium acetate, bis(4-secondbutylphenyl)hydrazine salicylate, 4_t-butylphenyl-4_hydroxyphenyl Hydrazine hydroxide, 4_t-butylphenyl-4-hydroxyphenyl hydrazine acetate, 4-second butyl phenyl hydroxyphenyl hydrazine salicylate, and the like. The amount of the hydrazine diffusion controlling agent (Ε) is preferably 0.001 wt% to 50 wt 〇 / 〇, more preferably 〇〇〇 1 wt% 〜 1 〇 plus %, and particularly preferably 0.001 wt% ~5 wt%, especially good for 〇〇〇1 wt%~3 wei. If it is within the above range, the resolution of the financial resolution is reduced, the pattern is mixed, and the size is faithful. Further, there is no patterning even if the exposure time after exposure from the electron beam riding to the irradiation after radiation irradiation becomes long. In addition, when the blending amount is 1 〇 wt% or less, it is possible to prevent a decrease in Ο 影 。 or the like. In addition, by using such an acid-emitting composition, the storage stability is improved, and it is also possible to suppress the light caused by the change in the post-exposure standing time after the exposure after the radiation exposure: Such as the other components (7), such as various additives, mm, 3, oxygen, or any of them (1) dissolution promotion = or two or more. The low-molecular-weight dissolution promoter is dissolved in the photoresist of the photoresist substrate. 2011 31300300 JO / For the Chinese manual of the "I42385", there is no slash correction. This revision period: 1 year, March 23, dissolving In the case of being low, the component which has an effect of improving the solubility and appropriately increasing the dissolution rate of the cyclic compound during development can be used within the range which does not impair the effects of the present invention. The dissolution promoter may be, for example, a phenolic compound, and examples thereof include bisphenols, tribendazole, and the like. These dissolution promoters may be used singly or in combination. The amount of the dissolution promoter to be adjusted is appropriately adjusted depending on the type of the resist substrate to be used, but it is 1 part by weight based on the resist substrate (the compound (4) and the compound 'hereinafter referred to as the photoresist substrate (8)). Preferably, it is '~100 parts by weight, more preferably 〇3 parts by weight, more than 10 parts by weight, more preferably 〜2 parts by weight. ‘、、' [2] Dissolution Control Agent Dissolution Control _ is a component that controls the solubility and makes the dissolution rate during development moderately reduce by the excessive solubility of the silk substrate. Such a dissolution control side is preferably a chemical process such as forging, several, radiation irradiation, development, etc. of the photoresist film, acetoPhen〇ne, benzophenone, phenyl fluorenyl , such as auxiliary oxime, methyl phenyl phosphorus, diphenyl, dinaphthyl hard and so on. Some of the dissolution controlling agents may be used singly or in combination of two or more. The amount of the dissolution controlling agent is appropriately adjusted depending on the type of the resist substrate (R) to be used, but the weight of the resist substrate (R) is 1 GG by weight. The parts by weight are more preferably 〇 〇 〜 〜 〇 〇 〇 〇 ^ ^ 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 。 。 。 。 。 。 。里里忉z里56 201131300 _ L ί Revised date: March 23rd of the following year is No. 142385 Chinese manual without scribe correction [3] Sensitizer sensitizer has absorption of irradiated radiation Energy, a component that transfers this energy to the acid generator (C), thereby increasing the amount of acid generated and increasing the apparent sensitivity of the photoresist. Examples of such a sensitizer include benzophenones, biacetyls, anthracenes, and phenones. The phenotliiazines and fluorenes are not particularly limited. 5 liters of sensitizer can be used alone or in combination of two or more. The amount of the reducing agent is appropriately adjusted according to the kind of the resist substrate (R) to be used, but is preferably 1 part by weight with respect to the resist substrate (R), preferably from 100 parts by weight. More preferably, it is ～30 parts by weight, more preferably 1010 parts by weight, particularly preferably 0 parts by weight to 2 parts by weight. [4] Surfactant The surfactant is a component which has an effect of improving the coatability, streaks, and developability of the resist of the positive-type radioactive composition of the present invention. Such a surfactant may be any of an anionic, cationic, nonionic or amphoteric. Preferred surfactants are nonionic surfactants. The nonionic surfactant has a good affinity with a solvent for producing a radiation-sensitive composition, and is more effective. Examples of nonionic surfactants include: polyoxyalkylene extended alkyl ethers, polyoxyalkylene extended alkyl phenyl ethers, and higher fatty acid diesters of polyethylene glycol, but not Specially limited. Commercially available products include Eftop (manufactured by Jemc Co., Ltd.), Megafac (manufactured by Otsuka Ink Chemical Industry Co., Ltd.), mu〇rad (manufactured by Sumitomo = Company), Aashi Guard, and Surflon (above by Asahi Glass Co., Ltd.) ), Pepol (manufactured by Toho Chemical Industry Co., Ltd.), κρ (Shin-Etsu Chemical 57 201131300 Revision period: March 23, 100, No. 142385, Chinese manual, no underline correction, manufactured by the industrial company), Polyflow Manufactured by Grease Chemical Industry Co., Ltd.). The amount of the surfactant to be added is appropriately adjusted depending on the kind of the resist substrate (R) to be used, but it is preferably 0 parts by weight to 100 parts by weight, based on 100 parts by weight of the resist substrate (R). It is preferably 0 parts by weight to 30 parts by weight, more preferably 0 parts by weight to 10 parts by weight, still more preferably 0 parts by weight to 2 parts by weight. [5] An oxyacid of an organic carboxylic acid or phosphorus or a derivative thereof may further contain an organic carboxylic acid or an oxoacid of phosphorus for the purpose of preventing deterioration of sensitivity or improving the shape of a resist pattern, stability after exposure, or the like. Its street creatures are an arbitrary component. Further, it may be used alone in combination with an acid diffusion controlling agent. The organic carboxylic acid is preferably, for example, malic acid, citric add, malHc add, succinic acid, benzoic acid, salicylic acid or the like. Examples of the oxoacid of phosphorus or a derivative thereof include a derivative such as a hetero- or di-n-butyl group, a bis-fluorene or the like, or a derivative thereof, a phosphonic acid, a phosphonium diphosphonate, and a di-n-butyl phosphonate. Derivatives such as phosphinic acid, phosphinic acid, etc., such as phosphinic acid or its vinegar, etc., sub-ship, phenylphosphinyl-phosphinus, etc. Derivatives, particularly preferred among these organic carboxylic acids. The organic carboxylic acid or the oxyacid of the scale or its street organism can be used alone. The oxyacid of _acid or dish or the second of its street creatures, 适当 is adjusted according to the (4) photoresist riding (R) _, weight TM 0 parts by weight, weight two 58 20113 Π 00π correction period: 1〇〇 On March 23, the Chinese manual of ^^^^142385 has no scribe line correction of 10 parts by weight, and particularly preferably 〇 part by weight to 2 parts by weight. [6] The above-mentioned dissolution-control paste, sensitizer, interface active lysing, and other additives other than acid or hindrance oxyacid or its derivative, in addition, the sensitized radioactive composition of the present invention may not hinder the present invention. Within the scope of the object, one or two or more additives other than the above-mentioned dissolution controlling agent, sensitizer, and surfactant may be blended as needed. Examples of the additive for this age include dyes, pigments, and auxiliaries. For example, if the dye or the woman is adjusted, the (four) light portion (four) image can be visualized, and the effect of the halation during exposure can be alleviated. Further, if the auxiliary agent is blended, the adhesion of the substrate can be improved, which is preferable. Further, examples of the other additives include a halo preventing agent, a storage stabilizer, an antifoaming agent, a shape improving agent, and the like, and examples thereof include a 4-based group, a 4-methyl chalcone (4 but a chalcone), and the like. Formulation of positive-type radioactive composition (Compound (A) / Compound (B) / Acid generator (C) / Acid diffusion control agent (E) Sub-(10) Weight percent based on solid content: Ο 49·989/5 〇~89.989/0.001 to 39.99/0.01 to 39.999/0 to 39.989, more preferably 1〇~49.989/50~89.989/0.001~39.99/0 01~39.999/0~15, 'Youjia is 12~35/60 ~7Ό/10~25/0.01~3/〇~1, especially good for 12.5~17.5/60~70Λ0~25/0.01~3/〇. For the above formulation, sensitivity 'resolution, alkaline developability The performance of the positive-sensing radioactive composition of the present invention is usually obtained by dissolving the components in the solvent by using the 59 201131300 revision date: March 23, 1995 as the 99M2385 Chinese manual. a uniform solution, and then, if necessary, filtering using, for example, a filter having a pore size of about 0.2 μm The above solvent for preparing the positive-type radioactive composition of the present invention may, for example, be ethylene glycol monoterpene ether acetate, ethylene glycol monoethyl ether acetate or ethylene glycol mono-n-propyl ether acetate. Ethylene glycol monoalkyl ether acetate such as ester, ethylene glycol mono-n-butyl sulphate acetate; ethylene glycol monoalkyl ether such as ethylene glycol monoterpene ether or ethylene glycol monoethyl ether; propylene glycol monomethyl ether acetate Propylene glycol monoalkyl ether acetate such as ester, propylene glycol monoethyl ether acetate, propylene glycol mono-n-propyl ether acetate, propylene glycol mono-n-butyl ether acetate; propylene glycol monoalkyl ether such as propylene glycol monoterpene ether or propylene glycol monoethyl ether Classes; lactate esters such as methyl lactate, ethyl lactate, n-propyl lactate, n-butyl lactate, n-amyl lactate; methyl acetate, ethyl acetate, n-propyl acetate, n-butyl acetate, n-pentyl acetate Aliphatic carboxylic acid esters such as ester, acetic acid, decyl propionate, and ethyl propionate; decyl 3-methoxypropionate, ethyl 3-methoxypropionate, 3-ethoxypropane Methyl ester, 3_ethoxypropionic acid ethyl acetate, 3_methoxy-2-indolyl propionate 曱, 3_methoxybutyl acetate vinegar, 3 _曱-oxybutylacetate 3-曱S, 3·methoxymethylpropionic acid butyl vinegar, 3 methoxy-3-mercaptobutyl butyl vinegar, acetamidine acetate, acetazide Other aromatics such as 曱 、, 曱 曱 苯 苯; 甲, 甲 , 4 _                          耶 曱 曱 曱 、 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Μ Red reduction and reduction of the present invention The dry circumference of the present invention contains L. sinensis which is soluble in an aqueous test solution. Soluble in alkaline water 60 201131300 / 1 〒:1 For the finest number of Chinese books, there is no slash correction. This correction date is the resin in the solution of March η day. The phenolic resin, polyvinyl phenol, Polyenoic acid, polyethylene glycol, stupid ethylene-maleic acid resin, and polymer containing acrylic acid, vinyl alcohol, or vinyl benzene as monomer units' or derivatives of these polymers Wait. The amount of the compound which is soluble in the aqueous test solution is appropriately adjusted according to the kind of the cyclic compound to be used, but is preferably 〇 by weight to 30 parts by weight based on 1 part by weight of the above cyclic compound. The portion is more preferably Q parts by weight to 1 part by weight, particularly preferably 0 parts by weight to 5 parts by weight, particularly preferably 0 parts by weight. [Method for Forming Photoresist Pattern] The present invention relates to a method for forming a photoresist pattern, which comprises the following two steps: using the above-mentioned (four) positive-type radioactive composition to block a film on a substrate, and exposing the photoresist film And forming a photoresist pattern on the photoresist film, and forming a photoresist film by using a spin coating, a casting coating, or the like to form a photoresist composition on a conventional (four) substrate. The term "first moon" can be exemplified by a substrate for an electronic component or a substrate. A substrate or the like of a predetermined wiring pattern. More specifically, examples of the material of the "substrate =: metal substrate such as iron, aluminum, etc." or the glass substrate may include copper, inscription, recording, gold, and the like. Further, it is necessary to provide an inorganic system and/or an organic material on the substrate. The inorganic film can be exemplified by an inorganic anti-reflection film (inorganic bottom anti-reflective coating (b〇tt〇m _ Yao _ (10) ring, 61 201131300 ~ / v / x date of revision: March 23, 00, the first &quot; I42385 Chinese manual has no slash correction BARC)). The organic antimony film can be exemplified by an organic antireflection film (organic said &amp; can also be used to surface treatment with hexamethylene divalent material. Next, the coated substrate is heated down. The addition and subtraction is based on the radioactive composition. The composition of the substance may vary, and it is preferably a machine of 5 〇 C - more preferably 2 〇 c 〜 i 〇 。 c. With the heat of the mouth, there is a case where the adhesion of the photoresist to the substrate is improved, and thus Preferably, the photoresist film is exposed to light by using any one of radiation selected from the group consisting of visible light, ultraviolet light, excimer laser, electron beam, extreme ultraviolet light (Euv), X-ray, and ion beam. In order to stably form a fine pattern of 鬲 precision during exposure, it is preferable to heat it after radiation irradiation. The condition is changed depending on the composition of the radiation-sensitive composition, etc., preferably 2 (TC to 250 ° C, more preferably 2 〇 t to 150. (:. Next, by exposing the exposed photoresist film Developing with an alkaline developing solution to form The above-mentioned alkaline developing solution is exemplified by the use of hydrazine to form a single-, two--in a manner that the enthalpy becomes 1 wt% to 10 wt%, more preferably 1 wt% to 5 wt%, to 4 degrees. Or more than one basicity of trialkylamines, mono-, di- or trialkanolamines, heterocyclic amines, tetramethylammonium hydroxide (TMAH), choline and other basic compounds When the concentration of the alkaline aqueous solution is 10% by weight or less, it is preferable to prevent the exposed portion from being dissolved in the developing solution. Further, in the above alkaline developing solution, decyl alcohol, ethanol, or isopropyl may be added in an appropriate amount. Or an alcohol or the above surfactant. Among them, it is particularly preferable to add 10 wt% to 30 wt% of isopropanol. Thereby, the developer can be improved to the photoresist 62 201131300 as "the crane number manual" It is better to use the scribe line to correct the coffee _ chest wetness. In addition, in the case of using such an experimental developer, it is usually washed with water after development. / After forming a photoresist pattern, the liquid is engraved with money. The method of obtaining the pattern matching can be better than using the plasma gas (4) dry type _ and = line of copper chloride solution For example, a wet paste such as a ferric chloride solution or the like may be subjected to mineralization, such as mirror copper, seed plating, mineral nickel, ore gold, etc. after etching. The residual photoresist pattern can be stripped by using a more aqueous solution of an organically soluble aqueous solution. The upper solution is listed as brain EA (propylene glycol mono(tetra)acetic acid vinegar), pGMEt=; A_), EL (Ethyl acetate) The potent aqueous solution may, for example, be a 1 to 20 wt% aqueous sodium hydroxide solution or an i wt% to 2% aqueous potassium hydroxide solution. Examples of the above-mentioned release method include a dipping method, a spraying method, and the like. The wiring substrate having the photoresist pattern may have a small-diameter through-hole for the multilayer wiring substrate. Wiring The wiring board obtained in the present invention may be formed by a method of dispersing a photoresist pattern in a vacuum and then dissolving the photoresist pattern in a solution after the photoresist pattern is formed. EXAMPLES Hereinafter, the embodiments of the present invention will be more specifically described by way of examples. However, the invention is not limited to the examples. In the following synthesis examples, the structure of the compound was confirmed by nuclear magnetic resonance (nudear leg, resonance, NMR) measurement. 63 201131300 Revision date: March 23, 100 ϋ 9^9142385 Chinese manual No slash correction This <Synthesis Example> Synthesis of compound (Β) Synthesis Example 1 Synthesis of CR-1B is fully dried and gas-gas displaced In a four-necked flask (1000 ml) equipped with a dropping funnel, a Dimroth condenser, a thermometer, and a stirring wing, the resorcinol (22 g, 0.2 mol) manufactured by Kanto Chemical Co., Ltd. was placed under a nitrogen stream. 4_isopropylbenzaldehyde (29.6 g, 〇2 m〇1), dehydrated ethanol (200 ml)' to prepare an ethanol solution. The solution was heated to 85 ° C while being disturbed. Then, using a dropping funnel, 75 ml of concentrated hydrochloric acid (35%) was added dropwise over 3 minutes, and then 3 = was disturbed at 85 °C. After the reaction was completed, it was allowed to cool, allowed to reach room temperature, and then cooled in an ice bath. After standing for 1 hour, a pale yellow target crude crystal was formed, which was separated by filtration. Then, the crude crystals were washed twice with 5 〇〇ml of decyl alcohol, separated by Y filtration and dried under vacuum, whereby the objective product (the following Table VIII$CR-1B) (45.6 g, yield 95%) was obtained. The structure of the compound was analyzed by liquid chromatography mass spectrometry (LC-MS), and the result showed that f) the molecular weight of the target was 960. In addition, the chemical shift value of 1H-NMR in 砺 二甲 二甲 ( ( ( ( δ δ δ δ δ TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM TM 2.6 2.6 2.6 2.6 2.6 2.6 2.6 4H) Soil 6〇~ 6.8 (m, 24H), 8.4, 8.5(d, 8H). ,.~ In addition, g) is soluble in alkaline developer (TMAH is 2 38 〇 / 中, h) in the molecule Has a phenolic hydroxyl group, e) Mw / Mn = 1 training. ° [化37] 64 201131300, the Chinese manual for the $9142385 is not underlined. Revision date: March 23, 1GQ (CR-I B) Synthesis of CR-2B The same procedure as in the case of CR-1 was carried out except that 4-isopropylbenzaldehyde in the synthesis example of CR-1B was replaced by 4-cyclohexylaldehyde. As a result, CR-2B (50 g, yield 91%) was obtained. The structure of the compound was analyzed by LC-MS, and the result showed f) the molecular weight of the target was 1121. In addition, the chemical shift value of 1H-NMR in the deuterated chloroform solvent (5 ppm 'TMS basis) is 0.8 to 1_9 (m, 44H), 5.5, 5·6 (d, 4H), 6.0 to 6.8 (m, 24H) ), 8.4, 8.5 (m, 8H). Further, g) is soluble in an alkaline developing solution (TMAH is 2.38 wt%), and h) has a bismuth-based radical in the molecule, e) Mw/Mn^1.00. [化38] 65 201131300 is the Chinese manual No. 99142385 without a slash correction CCR-2B) Date of revision: Synthesis of CR-1A-EE100 on March 23, 1999. Four-necked flask equipped with a dropping funnel, a Dairy cooling tube, a thermometer, and a stirring wing. 1 〇〇〇 ml), under a nitrogen stream, add 5 8 g to a solution containing 9.6 g (l〇mm〇1), 25 § p-pyrenesulfonate, 400 ml of acetone. (8〇mm〇i) ethyl vinyl ether. The reaction was stirred at room temperature for 24 hours. After completion of the reaction, the solvent was removed, and the obtained solid was purified by column chromatography using a solvent mixture of hexane / ethyl acetate = / / /. 12 2 g of CR-1A-EE100 substituted by ethoxyethyl group of 1 〇〇 m〇l% of a phenolic hydroxy group was obtained. The structure of the compound was analyzed by LC-MS, and the results showed that the molecular weight of a) was 1537. The 1H-NMR chemical shift value (δρρηι, TMS basis) of the obtained product in deuterated dimethyl hydrazine solvent is 〇.9~1.〇(m, 24Η), ll~L2 (m, 24Η), 4 (m, 24Η), 2 6~2 7 (m, 4Η), 3.3~3.4 (m, 16Η), 5.1 (m, 8Η), 5.5 (s, 4Η), 6_0~ 66 201131300 ^ -wt 丄〆▲ The upper i is the 99142385 Chinese manual without a slash correction. The date of this amendment is 6.8 (m, 24H) on March 23, 1st. In addition, b) is insoluble in an alkaline developer (TMAH is 2.38 wt%), c) is soluble in an alkaline developer (TMAH is 2.38 wt%) by the action of an acid, and d) has intramolecular As the ethoxyethyl group of the acid dissociable reaction group, e) Mw / Mn = 1.00. [化39] (CRTM 1 A-EE 1 0 0) Synthesis of CR-1A-CE100 A fully-dried, nitrogen-substituted four-necked flask equipped with a dropping funnel, a Dairy cooling tube, a thermometer, and a stirring wing (l〇〇 In 〇ml), under a nitrogen stream, CR-1B synthesized in Synthesis Example 1 containing 9.6 g (10 mmol), 2.5 g of pyridinium benzenesulfonate sulfonate, and 400 ml of 1,3-dioxolane Solution 67 201131300 Revision date: March 23, 2013, No. $9142385 Chinese manual, no trace correction, 10.0 g (80 mmol) of cyclohexyl vinyl ether was added dropwise. The reaction solution was stirred at room temperature for 24 hours. After completion of the reaction, the solvent was removed, and the obtained solid was purified by column chromatography using a mixed solvent of hexane/ethyl acetate. 12.2 g of a hydrogen atom of a phenolic hydroxyl group was obtained, i.e., 1% of CR-1A-CE100 substituted with a cyclohexyloxyethyl group. The structure of the compound was analyzed by LC-MS and the results showed a) molecular weight of the target 1969. The chemical shift value of the product (yield at 59, 111, butyl)\48 in the solvent of deuterated dimercaptopurine is 1. 〇~3.5 (m, 148H), 5.5 (s, 4H), 6.0 to 6.8 (m, 24H). In addition, b) is insoluble in an alkaline developing solution (tmAH is 2.38 wt%), c) becomes soluble in an alkaline developing solution (TMAH is 2.38 wt%) by the action of an acid, and has a molecule in the molecule As the acid cleavage reactive group, cyclohexyloxyethyl group, e) Mw / Mn = l. [化 40] 68 is the Chinese manual of No. 142385 without a slash correction. Amendment date: March 23, 1 &lt;CR-1 A-CE 10 0) Synthesis of 201131300χι CH-2A-EE100 A four-necked flask equipped with a dropping funnel, a Dairy cooling tube, a thermometer, and a stirring blade, which were sufficiently dried and replaced with nitrogen (l〇〇 〇ml), under a helium turbulent flow, to a solution containing 11.2 g (10 mmol) of CR-1B synthesized in Synthesis Example 2A, 2.5 g of p-toluenesulfonate pyridine rust, and 400 ml of acetone. Add 5.8 g (80 mmol) of ethyl vinyl ether. The reaction solution was mixed for 24 hours at /ja. After completion of the reaction, the solvent was removed, and the obtained solid was purified by column chromatography using a solvent mixture of hexane/ethyl acetate = 1/3. 1 g mol% of a hydrogen atom of 12.5 g of a phenolic hydroxyl group was obtained by replacing the CR-2A-EE100 with an ethoxyethyl group. The structure of the compound was analyzed by LC-MS, and the result was as follows: 69 201131300 ^ No. 1 9*9142385 Chinese specification without scribe correction Date of revision: March 23, 2013 The molecular weight of the target was 1697. The chemical shift value (δρρπι, TMS basis) of 1H-NMR in the gas solvent was 〇.8~1.9 (m, 92Η), 3.5 (m, 16Η), 5.5, 5.6. (d, 12Η), 6.0~6.8 (m, 24Ή). , in addition, b) is insoluble in an alkaline developer (ΤΜΑΗ 2 38 wt%), c) becomes soluble in the alkaline developer (TMAH is 2.38 wt%) by the action of an acid. There is an ethoxyethyl group as an acid dissociable reactive group, and e) Mw/Mn = 1.00. [化41] (CR- 2 A-EE 1 0 〇) The synthesis of CR-2A-CE100 is provided with a dropping funnel and a Dyes cold 70, 201130300 for the 9th and 9012. Date of repair: Synthesis of 11.2 g (1〇mmol) in a four-necked flask (1000 ml) of tube, thermometer, and stirring wing on March 23, 1GG, under nitrogen &quot;丨&lt;_ Add 2 〇〇g (8〇mm〇1) to the oR&quot;2B '2·5§ p-toluenesulfonic acid pyridine rust, 400 ml of 1,3-dioxolane&gt; Cyclohexyl vinyl ether. The solution was allowed to stand at room temperature for a few hours. After completion of the reaction, the solvent was removed, and the obtained solid was purified by column chromatography using hexane / ethyl acetate = 1/3. 1 2 mol% of a hydrogen atom of a phenolic hydroxyl group was obtained as a cyclohexyloxyethyl group-substituted cr_2A-CE100.结构 The structure of the compound was analyzed by LC-MS and the results showed a) the molecular weight of the target was 212 9 . The 1H-NMR chemical shift value (δρρηι, TMS basis) of the obtained product in deuterated dimethyl sulfoxide solvent was 〇.8~1.9 (m, 148 Η), 3.5 (m, 8 Η), 5.5, 5.6 (d) , 12Η), 6.0~6.8 (m, 24H). In addition, b) is insoluble in an alkaline developer (TMAH is 2 38 wt%), c) becomes soluble in the developer (TMAH is 2.38 wt%) by the action of an acid, d) intramolecular ◎ cyclohexyloxyethyl group as an acid dissociable reactive group, e) Mw / Mn = 1.00. [化42] 71 201131300 is the "" Chinese version of the round book 修正 修正 修正 revised date revised March 23 Synthesis of CR-1A-EE50 = The addition of the amount of ethyl vinyl ether in the synthesis example of CR-1A-EE100 was changed to half, and it was synthesized in the same manner as CR_1A_EE1〇〇. 5〇m〇i% of the hydrogen atom of the group is CR-1A-EE50 (mixture) of ethoxylated. In addition, the obtained compound b) is insoluble in an alkaline developing solution (TMAH is 2.38 wt%), c) becomes soluble in basic two (: H is 2.38 wt%) by the action of an acid, d) * has an ethoxyethyl group as an acid solution = a reactive group. Synthesis of CH_lA-CE5〇======================================================================================================================== The specification has no slash correction. The date of this revision is: March 23, 1st, to obtain 50 mol% of the hydrogen atom of the phenolic hydroxyl group, CR-1A-CE50 (mixture) substituted by ethoxyethyl group. Compound b) is insoluble in an alkaline developer (TMAH is 2.38 wt ° / 〇), e) becomes soluble in the test-producing multi-liquid (TMAH is 2.38 wt%) by the action of an acid, d) a cyclohexyloxyethyl group as an acid dissociable reactive group in the molecule. The synthesis of CR-2A-EE50 is carried out by changing the amount of cerium added to the ethyl vinyl group in the synthesis example of CR-2A-EE100 to half. In the same manner as CR-2A-EE100, a 50 mol% cyclohexyloxyethyl-substituted CR-2A-EE50 (mixture) obtained by obtaining a hetero atomic hydrogen atom was synthesized. Further, the obtained compound b was insoluble. In the alkaline developer (TMAH is 2.38 wt%), c) becomes soluble in the developer (TMAH is 2.38 wt%) by the action of an acid. d) an ethoxyethyl group having an acid dissociable reactive group in the molecule. The synthesis of CR-2A-CE50 is carried out by changing the addition of 1 of the ethyl vinyl ether in the synthesis example of CR-2A-CE100 to half. In addition, in the same manner as CR-2A-CE100, a 50 mol% cyclohexyloxyethyl CR-2A-CE50 (mixture) of a hydrogen atom of a phenolic hydroxyl group was obtained. b) insoluble in the test developer (TMAH is 2.38 wt%), c) becomes soluble in the alkaline developer (TMAH is 2.38 wt%) by the action of acid, d) has a solution in the molecule Reaction group of cyclohexyloxyethyl group 73 2011313001 Revision period: March 23, 100 is the first button of the Chinese manual 142385 no line correction This example 4 and comparative example 1~_) ΓΜ λα τ fl (丄+ After the knives and I were in a uniform solution, the film was subjected to a pore size (U _ Teflon (registered trademark) membrane filter for the radioactive composition of each of the sensitivities. The results are shown in Table 2. Evaluation of T (1) sensitivity The photoresist was spin-coated on a clean Shihwa wafer and then exposed in a flood box. Baking (pre-bake, ΡΒ)' forms a photoresist film having a thickness of 6 〇 nm. The photoresist film is irradiated with an electron beam drawing device (ELS_75〇〇, manufactured by χηίχ), and irradiated at intervals of 100 nm. i : ! The electron beam set by the line and the gap. After the irradiation, it was heated at a predetermined temperature for 9 seconds, and developed in a 2.38 TMAH aqueous solution for 60 seconds. Then, it was washed with water for 2 seconds and dried to form a positive resist pattern. The obtained lines and gaps were observed using a scanning electron microscope (S-4800 manufactured by Hitachi High-Technology). Further, the dose (gC/cm2) at this time was taken as the sensitivity. A : Dosage $50pC/cm2 (excellent sensitivity) B : 50 pC/cm2 <dose $120 pC/cm2 (good sensitivity) C : 120pC/cm2 <dose (poor sensitivity) (2) Line edge roughness Evaluation of (LER) In any 300 points of the line length and the length direction of the gap (0.75 μm) at a distance of 100 nm, the SEM terminal Pc V5 of the stand-up semiconductor is used to measure the long-length software ((Hyper) Hitachi Science Systems Manufacturing) 'Measurement side 74 201131303⁄4 is the Chinese manual of No. 9^9142385. There is no slash correction. This revision period: the distance from the edge of the March 23rd. The standard deviation (3σ) was calculated from the measurement results. A : LER (3σ) S3.5 nm (good LER) C : 3.5 nm CLER (3σ) (not good LER) Confirmed by the results of the patterning test 'The use of the specific compound (A) and the compound (B) of the present invention The sensitizing radioactive composition was superior in sensitivity and LER to the sensitized radioactive composition of the compound (A) containing the mixture of the comparative examples. Further, the specific compounds (A) and (b) of the present invention are easy to produce compounds having a purity of 1% by weight, and can be blended only by mixing them, and quality management is easy. On the other hand, the compound (A) containing the mixture of the comparative examples is a mixture, and its composition is produced each time it is produced, and quality management is difficult. 〇75 201131300 Revision date: March 23, 1999, No. 99142385 Chinese manual, no underline correction [Table 1] (C) (E) Compound (A) Compound (B) Acid generator acid diffusion control agent Solvent (g) (g) (g) (g) (g) Example 1 CR-1A-EE100 CR-1B P-1 Ql S-1 0.50 0.50 0.3 0.03 30.0 Example 2 CR-1A-CE100 CR-1B P- 1 Ql S-1 0.50 0.50 0.3 0.03 30.0 Example 3 CR-2A-EE100 CR-2B P-1 Ql S-1 0.50 0.50 0.3 0.03 30.0 Example 4 CR-2A-CE100 CR-2B P-1 Ql S-1 0.50 0.50 0.3 0.03 30.0 Comparative Example 1 CR-1A-EE50 P-1 Ql S-1 1.00 0.3 0.03 30.0 Comparative Example 2 CR-1A-CE50 P-1 Ql S-1 1.00 0.3 0.03 30.0 Comparative Example 3 CR-2A-EE50 P-1 Ql S-1 1.00 0.3 0.03 30.0 Comparative Example 4 CR-2A-CE50 P-1 Ql S-1 1.00 0.3 0.03 30.0 Comparative Example 5 CR-1A-EE100 P-1 Ql S-1 1.00 0.3 0.03 30.0 Comparison Example 6 CR-1A-CE100 P-1 Ql S-1 1.00 0.3 0.03 30.0 Comparative Example 7 CR-2A-EE100 P-1 Ql S-1 1.00 0.3 0.03 30.0 Comparative Example 8 CR-2A-CE100 P-1 Ql S -1 1.00 0.3 0.03 30.0 (c) Acid generator P-1: Triphenylphenyl sulfonium trifluorosulfonate (MidoriKagaku (share)) (E) Acid Diffusion Control Agent Q-1: Trioctylamine (Tokyo Chemical Industry Co., Ltd.) Solvent S-1: Propylene Glycol Monodecyl Ether (Tokyo Chemical Industry Co., Ltd.) 76 201131300, No. $9142385 Chinese manual without line correction This revision date: March 23, 1 [Table 2] PEB sensitivity LER (3σ) (0〇(μΟ/αη2 ) Example 1 110 AA Example 2 110 AA Example 3 110 AA Example 4 110 AA Comparative Example 1 110 AC Comparative Example 2 110 AC Comparative Example 3 110 A c Comparative Example 4 110 A c Comparative Example 5 110 C Pattern cannot be formed Comparative Example 6 110 c Pattern cannot be formed Comparative Example 7 110 c Pattern cannot be formed Comparative Example 8 110 c Pattern PEB cannot be formed: Temperature at the time of heating after electron beam irradiation (Comparative Example 9) In Example 4, instead of the CR-2A-CE100 of the compound (A), a cyclohexyloxy group was introduced into a polyhydroxystyrene (PHS) (Mw = 8,000, manufactured by Aldrich) as a polymer by a usual method. The patterning test was carried out in the same manner except that the base ethyl group was 100 mol% of PHS-CE100. The knot 77 201131300 was the Chinese manual No. 142385 without a slash correction. The date of revision: March 23, 2011 The LER was judged to be c. (Comparative Example 10) In Example 4, instead of the CR-2B of the compound (b), polyhydroxystyrene (PHS) as a polymer was used (Mw = 8, 〇〇〇, Aldrich). system In the same manner as in the above, the patterning test was carried out. As a result, ler was judged to be C. (Comparative Example 11) In Example 4, PHS-CE100 was used instead of cr_2A-CE1〇〇 of the compound (A). A patterning test was carried out in the same manner as in the case of CR_2B of the compound, except that polyhydroxystyrene (PHS) (Mw = 8,000, manufactured by Aldrich) was used as the polymer. The result was a dose of 120 pC/cm 2 or less. In addition, in any of Comparative Example 9 to Comparative Example 11, it was confirmed that the film was obtained by spin coating, and it was considered that the spot was caused by poor phase solubility. The polyhydroxystyrene as a polymer or the polyhydroxystyrene to which an acid dissociable functional group is introduced has a molecular weight distribution, and is also inferior in terms of quality control. [Industrial Applicability] The present invention is suitable for use. An acid-amplified low-molecular-weight positive-type radioactive composition and a photoresist pattern forming method using the same. [Simplified description of the drawing] [Explanation of main components] Ak 〇* 78 201131300 ^ For the Chinese manual No. 99142385, there is no slash correction. This revision date: March 23, 1995 invention patent specification (this specification format ', please do not change any more, please do not fill in the ※ part of the mark number. ※ ※Application number: f ※ Application 曰: ※^(:Classification: I. Invention name: (Chinese/English) Low molecular weight positive type radioactive composition and photoresist pattern forming method LOW MOLECULAR WEIGHT POSITIVE RADIATION-SENSITIVE RESIN COMPOSITION AND 〇FORMING METHOD OF RESIST PATTERN II Abstract: It is an object of the present invention to provide a radiation-sensitive composition containing a photoresist material (compound) which has a good shape and a good manufacturing and quality control, and a photoresist pattern formed using the radiation-sensitive composition. method. The present invention solves the problem by a positive-type radiation-sensitive composition containing a specific low molecular compound and a photoresist pattern forming method using the composition. 201131300 is the Chinese manual of No. 99142385. There is no slash correction. The date of this amendment is: March 23, 2013. Abstract: The object of this invention is to provide a radiation-sensitive composition containing a resist material (compound) which Has excellent shape of obtained resist pattern and easy to quality control, and a forming method of resist pattern using the radiation-sensitive composition. The object is solved by a positive radiation-sensitive composition including a specific low molecular compound and the forming method of resist Pattern using the composition. 201131301 is the Chinese manual of the number "quot42385" without a slash correction. The date of this amendment (10) is the date of March VII. The scope of the patent application: 1. A positive-type radioactive composition containing: a) Compounds (a) of all the conditions of ~e), which satisfy all the conditions of the following f) to 丨), are selected from the group consisting of visible light, ultraviolet light, excimer laser, electron beam, and extreme ultraviolet rays. a group of lines and ion beams An acid generator (C), an acid diffusion controlling agent (E), and a solvent which directly or indirectly generate an acid by irradiation of radiation; and the composition contains 1 Wt% to 80 wt% of a solid component and 20 wt% ~ 〇 99 wt% of the solvent, the sum of the weight of the compound (a) and the weight of the compound (b) is 50 wt% to 99 wt% of the total weight of the solid component; a) molecular weight: 400 to 3000; b) insoluble In an alkaline developing solution (argon oxidized tetradecyl ruthenium (2.38 wt%)); c) becomes soluble in an alkaline developing solution (TMAH is 2.38 wt%) by the action of an acid; d) At least one phenolic Q hydroxy or thiol group having an acid dissociable functional group introduced therein; e) 1.0 〇 SMw / MnS 1.05 (Μη : number average molecular weight, Mw : weight average molecular weight); f) molecular weight · 350 ~ 2500 ; g) soluble in the developer (TMAH is 2.38wt%); h) has at least one phenolic hydroxyl or carboxyl group in the molecule; 〇l.〇〇SMw/MnS1.05. 2. The positive-type radioactive composition as described in item 1 of the scope of patent application. 79 201131300 is the Chinese manual of No. 99142385. There is no slash correction. The date of this amendment: HM), March 23, the above compound (A) is A compound (Aa)e having an acid-dissociable functional group introduced into the phenolic hydroxyl group of the above compound (B) and a carboxyl group, and a positive-type radioactive composition according to claim 1, wherein the above compound ( B) is a compound (Bb) in which an acid dissociable functional group is not introduced on all phenolic hydroxyl groups and carboxyl groups. 4. The positive-type radioactive composition according to claim 1, wherein the compound (A) is the above-mentioned compound (Aa), that is, the cyclic compound (A1) represented by the following formula (1A), and The above compound (b) is the above compound (Bb)', which is represented by the following formula (1B) (B1" [Chemical Formula 1] (In the formula (1A), L is independently a stretching wire selected from a linear or branched filament derived from a single bond, a carbon number, a aryl group having a carbon number of 3 to 2 6 to 24, _〇... Stone inverse number 5)-C (Which, ·_• (4) Q_, _s_, _SQ Any combination of these bases, the two health of the towel, _ site is ^ 80 201131300" for the 99142385 Chinese manual without Correction of the line correction period __100 March 23 〇 free carbon number 1 to 20 alkyl group, carbon number 3 to 20 cycloalkyl group, carbon number 6 to 20 aryl group, carbon number 1 to 20 alkane a functional group in the group consisting of an oxy group, a cyano group, a nitro group, a heterocyclic group, a halogen atom, and a decyl group having a carbon number of 1 to 20, selected from a substituted fluorenyl group having 2 to 20 carbon atoms, and carbon 3 to 2 〇 of 丨_substituted ethyl group, carbon number 4 to 20 1-substituted-n-propyl group, carbon number 3 to 2 〇 of ι_ branched alkyl group, carbon number 1 to 20 decyl group, carbon number 2 a fluorenyl group of -20, a 1-substituted oxyalkyl group having 2 to 20 carbon atoms, a cyclic sulfonic group having 2 to 20 carbon atoms, an alkoxycarbonyl group having 2 to 20 carbon atoms, and an alkoxycarbonylalkyl group. An acid-dissociable functional group in a group consisting of, or a hydrogen atom, R, alone For 2 ~ 20 carbon atoms, an alkyl group, or the following formula [Formula 2] R4 is a group selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, and a nitrogen-based group. a functional group in the group consisting of a heterocyclic group, a _ atom, and a decyl group having a carbon number of 1 to 20, or a substituted methyl group having a carbon number of 2 to 20 and a carbon number of 3 to 20 -Substituted ethyl, 1-substituted with 4 to 20 carbon atoms, propyl group, 1-branched alkyl group having 3 to 20 carbon atoms, alkylene group having 1 to 20 carbon atoms, fluorenyl group having 2 to 20 carbon atoms, carbon a 2-substituted alkoxyalkyl group having 2 to 20 carbon atoms, a cyclic ether group having 2 to 20 carbon atoms, an alkoxycarbonyl group having 2 to 20 carbon atoms, and an alkoxy group 81 1 201131300 Modified period: March 23, 100曰 is the Chinese manual No. 9 '9142385 without the slash correction of the acid dissociable functional r1 alkyl group in the group consisting of the carbonyl alkyl group, m is an integer of 1-4, and p is an integer of 〇~5. 3] (Formula (1B) towel 'L is independently a linear or branched stretched wire selected from a single bond, a carbon number, a stretched base having a carbon number of 3 to 2 G, and an extended aryl group having a carbon number of 6 to 24, _0_, _〇c(=〇), _〇c(=〇)〇, -n(r5A)-c(=o)_, _N(R5A)_C(=0)0...s_, _s〇, _s〇 And a divalent group in the group consisting of any combination of the groups, R1A is independently selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, and a carbon number of 6 to 20 Functional groups in the group consisting of an aryl group, an alkoxy group having a carbon number of 丨20, a cyano group, a nitro group, a hydroxyl group, a heterocyclic group, a halogen atom, a carboxyl group, and an alkylalkyl group having 1 to 20 carbon atoms , or a hydrogen atom, R" is independently a carbon number of 2 to 20, or the following formula [Chemical 4] 82 201131300. For the No. Chinese manual, there is no _ correction of this amendment earned _3_ \ -j^4a R4A is an alkyl group selected from the group consisting of a carbon number of 丨~跗, a cycloalkyl group having a carbon number of 3 to 20, an aryl group having a carbon number of 6 to 20, an alkoxy group having a carbon number of 丨~strong, a cyano group, and a nitrate The base of the group, the heterocyclic group, the hydroxyl group, the halogen atom, the enemy group and the carbon number 2 (3) a group, or a group selected from the group consisting of a substituted fluorenyl group having 2 to 20 carbon atoms, a substituted ethyl group having 3 to 20 carbon atoms, an i-substituted-n-propyl group having a carbon number of 4 to 20, and a carbon number of 3 to 2 Å. a base group having a carbon number of 1 20; a ruthenium group having an inverse of 2 to 2 ε, a ruthenium-substituted alkoxy group having a carbon number of 2 to 2 Å, a ring (tetra) group having a carbon number of 2 to 2 G, and carbon The acid dissociable B-B' R or R4A in the group consisting of 2 to 2 Å of an alkoxy group and an alkoxy group is at least a promiscuous base or a rebel group. R5a is a halogen atom or a carbon number of 1 to 20, # is an integer of 4, and ^ is an integer of 〇~5. 〇a 5. A method for forming a photoresist pattern, comprising the following steps: The photosensitive composition according to any one of the first to fourth aspects of the invention, wherein the photoresist film is formed on the substrate; the photoresist film is exposed; and the photoresist film is developed to form a photoresist pattern. 83 201131300^ For the Chinese manual No. 99142385, there is no slash correction. The date of this amendment: March 23, 1 四 4, the designated representative map: (1) The representative representative of the case is: No. (2) The present generation Brief Description of reference numerals of FIG: No Fifth, if the case of formula, please disclosed invention features most indicative of the formula: None billion 3