201128931 0980068TW 32648twf.doc/n 六、發明說明： 【發明所屬之技術領域】 本發明係與一種電壓控制振盈裝置有關，且特別係與 一種多相位的電壓控制振盪裝置有關。 【先前技術】 在現今的技術中，電壓控制振盪裝置（voUage controlled oscillator，VCO)的種類大概可以分成三種，其等 分別為考畢茲（Colpitts)、哈特利(Hartely)以及交相耦合 (Cr〇SS-Couple)三種類型。其中大部分的電壓控制振盪裝^ 都是利用電感以及電容所構成的共振電路(或稱為共振槽 或共振腔）’來完成基本的振盪功能。電壓控制振盪裝置常 被應=在鎖相迴路(PhaseL〇ckL〇〇p，pLL)中，而在綠色設 拍刖提下，這種鎖相迴路的功率、;肖耗常是設計者所注意 中二如何在鎖相迴路中設計一個省電的電壓控 又盪裝置，就成為一個重要的課題。 下杯照圖1 ’目1纟會示—種習知的並職合四相 :璧控制振盡裝置⑽。電壓控制振蘯裝置100係利用 雷士2以及絲C21、C22、c23及c24來組成電感電 電路，並且利用電晶體M21、M22、m23及M24的分 且脚兩個—階的交相轉合電晶 電晶體電路，俜田4 又々曰褐合 電容共振電路二=負電阻以抵消與其相連接的電感 路的flb里消耗。電壓控制振盪裝置1〇〇則 用串聯的電日日日λ彳 録i貝丨疋利 曰紅M21、M22、m23及m24進行耦合，來產生 201128931 0980068TW 32648twf.doc/n 四相位的輸出信號12+、12-、（32+及Q2_。由於這種習知的 電壓控制振盛裝置1GG使用串聯的電晶體(例如電晶體 要較高糕㈣統電壓V“使得整體的 f率她上升。並且，使用串聯電晶體搞合的方式上，也 ^為電晶體所產生的雜訊而使得整體的相位雜訊的表現 F置=請’圖2緣示—種1知的電壓控制振盪 =置2⑻。電壓控制缝裝置鳩中包括由電晶體 =Γ=3ίΜ34所喊的互補式交她合電㈣電路，以 l31及可_容C3i、^所組成的電感電容共振 抗而可變電容電晶體電路係用以提供負阻 壓控制振二=出信號的頻率。電 M31、VI 、Λ/f XX TV 有效的改善交相耦合的電晶體 的表現H 333 34的祕度，並提升整體之相位雜訊 及Μ ：二由於其具有串聯的電晶體(例如電晶體心 及Μ33)’而在節省功耗的表現上 另外，請來昭圖3所洽-ΛΛ 口 控制振盪穿m =、、'曰7^的另—種習知的四相位電壓 l41、l ί 麵制振聽包括由電感 成的電感電容共振電路:r由xc:。:及〜所組 ，所組成的交相㈣晶體電路；：；、= 電晶體柄合所產生的_ :2出’並進而避免利用 整體之相心壓控制滅裝置300 本σ 、、。：、、;、而，電壓控制振盪裝置300並 [S1 5 201128931 0980068TW 32648twf.doc/n 未，有效降低系統麵Vdd，而在雜的表現上依舊未盡 人意。 【發明内容】 本發明提供-種電壓控制振盪聚置，其係用以產生多 =同相位的多個輸出信號，而可以有效改善相位雜訊。 考X明亚且可以降低所需要的操作電壓，而進一步降低功 半的消耗。 發明提出—觀壓控制振H置，其包括多數個電 鮮元。其巾的各驗㈣«單元係相聽ί 感兩信號’各電壓控制振盡單元則包括電 i带=2二路：父相—合電晶體電路以及尾端電路。電 將第一參考電壓與交相耦合電晶體電路 接廿曰’毛端電路則將第一交相麵合電晶體電路加以搞 tit尾端電路包括第―、二偏壓控制電感以及第-、 壓茲二t、二偏壓控制電感的—端係、共同與偏壓電 二而二的=雜接至交相綱晶 壓控制電^ 壓，其之祕餘接至第二偏 以提供d，:貫:例:’上述之第-偏壓控制電感可 電曰曰脰-第-控制電壓，以控制第一電晶體的 201128931 0980068TW 32648twf.doc/n 等效阻抗，而第二偏壓控制電 第二控制電壓，以控制第二電 在本發明之一實施例中， 電晶體皆在三極管區進行作用 在本發明之一實施例中， 此間均不相同。 感則可以提供第二電晶體一 晶體的等效阻抗。 上述之第—電晶體以及第二 〇 上述之相位輪出信號相位彼201128931 0980068TW 32648twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a voltage controlled oscillating device, and in particular to a multi-phase voltage controlled oscillating device. [Prior Art] In today's technology, the types of voltage-controlled oscillators (VCOs) can be roughly divided into three types, which are Colpitts, Hartely, and cross-phase coupling ( Cr〇SS-Couple) three types. Most of these voltage-controlled oscillating devices use a resonant circuit (or resonant cavity or resonant cavity) composed of an inductor and a capacitor to perform the basic oscillating function. The voltage-controlled oscillating device is often used in the phase-locked loop (PhaseL〇ckL〇〇p, pLL), and in the green setting, the power of the phase-locked loop is often noticed by the designer. How to design a power-saving voltage-controlled and swinging device in the phase-locked loop becomes an important issue. The next cup is shown in Figure 1 ''''''''''''' The voltage-controlled vibrating device 100 uses the NVC 2 and the wires C21, C22, c23, and c24 to form an inductive electric circuit, and uses the two-step interphase of the transistors M21, M22, m23, and M24. The electric crystal transistor circuit, the Putian 4 and the browning capacitor resonance circuit 2 = negative resistance to offset the consumption of the flb connected to the inductor circuit connected thereto. The voltage-controlled oscillating device 1 耦合 is coupled with a series of electric day and day λ 彳 i 丨疋 丨疋 M 21 21 M21, M22, m23 and m24 to generate the output signal 12 of 201128931 0980068TW 32648twf.doc / n four phases +, 12-, (32+ and Q2_. Since this conventional voltage-controlled vibrating device 1GG uses a series-connected transistor (for example, the transistor has a higher voltage (four) system voltage V" causes the overall f-rate to rise. In the way of using the series transistor, it is also the noise generated by the transistor, so that the performance of the overall phase noise is set to F = please 'Figure 2 edge' - a known voltage control oscillation = set 2 (8) The voltage control slit device includes a complementary electric hybrid (four) circuit shouted by a transistor = Γ = 3ίΜ 34, an inductor-capacitor resonance reactance and a variable capacitance transistor circuit composed of l31 and a capacitor C3i, ^ It is used to provide the negative resistive voltage to control the frequency of the two signals. The electric M31, VI, Λ/f XX TV effectively improves the performance of the phase-coupled transistor H 333 34 and enhances the overall phase miscellaneous News and Μ : 2 because it has a series of transistors (such as the crystal heart Μ33)' In addition to the performance of saving power, please refer to Figure 3 - ΛΛ 控制 控制 控制 m m m m m m m = = = = ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The oscillatory circuit consists of an inductor-capacitor resonant circuit consisting of an inductor: r is composed of xc:.: and ~, and the phase (4) crystal circuit is composed of:;;, = _ _ 2 out of the transistor handle and further Avoid using the integral phase core pressure control device 300 σ, , . : , ,;,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The present invention provides a voltage-controlled oscillatory acquisition system for generating multiple output signals of multiple in-phase, which can effectively improve phase noise. Moreover, the required operating voltage can be reduced, and the consumption of the work half can be further reduced. The invention proposes that the pressure control vibration H is set, which includes a plurality of electric fresh elements. The inspection of the towel (4) «the unit is audible and the two signals are 'Various voltage control and vibration unit includes electric i band = 2 two way: father phase The combined crystal circuit and the tail end circuit electrically connect the first reference voltage to the cross-coupled transistor circuit, and the 'hair-end circuit connects the first cross-phase to the transistor circuit to make the tail circuit including the first, Two bias control inductors and the first-, second-voltage, two-bias control inductor-end-end, common and bias voltage two-to-two hybrid-to-phase crystal pressure control voltage, the secret Connected to the second bias to provide d,: for example: 'The above-mentioned first-bias control inductor can be electrically---control voltage to control the first transistor 201128931 0980068TW 32648twf.doc/n equivalent Impedance, and the second bias controls the second control voltage to control the second electrical. In one embodiment of the invention, the transistors all function in the triode region in one embodiment of the invention, which are all different. The sense can provide the equivalent impedance of the second transistor-crystal. The above-mentioned first transistor and the second phase
的第ί 控上述之各崎制振鮮元 早兀之電感電容共振電路係相电感職盈 控制=單，，可以產生相位上 括第施财，上述之電感電容共振電路包 括弟、一共振電感，以及第„、二匕 =電，—端係共同祕至第一參考-第二;: 容的一，輕接至該第-共振電感的另—端，^:= 接收調}電壓。並且，第二共振電容的-端係柄接至^ 共振it二另-端則會接收調整電壓。一 電容值叙第—、二共振電容為 在本發明之一實施例中，上述之交相人 包括第-及第二交相輕合電晶體。其中，第: 汲極_接至電感電容 ，源/ 電晶體。第二交相=== f ，原/汲極及第二源/汲極，其之第-源/汲椏係 201128931 uy«uu〇6iw^ 32648twf.doc/n 耦接至電感電容共振電路以及第—六 極，其之第二源/汲極係耦接至尾端電^目輕合電晶體的閘 其之閘極係麵接至第一交相輕合電晶體電晶體’且 在本發明之一實施例中，上、 源V没極。 電壓。 K第—參考電壓為系統 在本發明之—實_巾， 電壓。 乐一參考電壓為接地 在本發明之一實施例中，上 —The 第 上述 各 各 各 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感 电感And the „, 匕============================================================================================= The second end of the second resonant capacitor is connected to the ^ resonance and the other end receives the adjustment voltage. A capacitance value - the second resonance capacitor is in one embodiment of the present invention, the above-mentioned phase person Including first and second phase-crossing light-emitting transistors, wherein: the first: the drain _ is connected to the inductor and capacitor, the source / the transistor. The second phase === f, the original / drain and the second source / drain The first source/drain is coupled to the inductor-capacitor resonant circuit and the sixth-pole, and the second source/drain is coupled to the tail terminal. The gate of the light-emitting transistor is connected to the first phase-coupled light-emitting transistor transistor and, in an embodiment of the invention, No voltage V K - of. The reference voltage for the system in the present invention - the reference voltage is a ground Le embodiment of the present invention, a solid _ one towel, the voltage, on the -
型金氧半場效電晶體。 一電晶體為N 基於上述說明，本發明補由在尾 來:電感電容共振電路互感 = 的輸出#號。並且，本發明提 座生夕相位 ==阻’以改善交购合電作 進而達到降低功率消耗。特性，亚降低操作電壓’ 兴每^本發明之上述特徵和優點能更明顯易懂，下文护 舉貫施例，並配合所附圖式作詳細說明如下易搶下灿 【實施方式】 凊參照圖4，圖4絡干太恭Rn a — 振盪裝置400的示音圖施例的電屢控制 括電壓控制餐d 電壓控制振盡裝置400包 剑係相聽合，並產生相祕/餘制振好疋楊、 卫產生相位輸出信號1+、I-、Q+及Q_。 201128931 wy〇w〇〇rW 32648twf.doc/n 振鮮元41〇包括電感電容共振電路4ii 一 412及尾端電路413。相類似的，電^ 合電晶體電路422及尾電路421、交_ 在電麗控制振盪單元41〇中，電 :=參考電壓V-以及交她合電晶體電=4U 晶體電路412則係另外_至尾端_ ’交 =bias而其之另—端則係迪至電晶體M55的閘極。Type gold oxide half field effect transistor. A transistor is N. Based on the above description, the present invention is supplemented by the end: inductance and capacitance resonance circuit mutual inductance = output # number. Moreover, the present invention provides a phase of life == resistance to improve the purchase of electricity and thus reduce power consumption. Characteristics, sub-lowering operating voltage' The above-mentioned features and advantages of the present invention can be more clearly understood, and the following is a detailed description of the following examples, and the following drawings are described in detail as follows: [Embodiment] 凊 Reference Figure 4, Figure 4 络 太 R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R Zhenhao Yang and Wei produce phase output signals 1+, I-, Q+ and Q_. 201128931 wy〇w〇〇rW 32648twf.doc/n The vibrating element 41〇 includes an inductor-capacitor resonant circuit 4ii-412 and a tail end circuit 413. Similarly, the electro-transistor crystal circuit 422 and the tail circuit 421, the intersection _ in the electric control oscillation unit 41, the electric: = reference voltage V - and the electric transistor = 4U crystal circuit 412 is another _ to the end _ 'cross = bias and the other - the end is the gate of the transistor M55.
My的源極係耦接至參寺電 電日日體 至交相輕合電晶體魏偏^：；ΪΖ係輕接 :係，至偏綱V一其另一端則係二 =體 1、f甲極。電晶體μ56❸源極係輕接至參考電壓⑽D， ，、之及極則係麵接至交相_合電晶體電路仍。 在此要注意的是，電晶體λ 得其之汲極迦參伽⑽二心==減 =合電晶體電路412的方式，圖:所 本發明的實施方式。上述的參考電 以是電壓控制振錢置的系統電壓則可 偏壓控制電感L55可以提供電晶體心 的十均值將可以由偏壓控制電感L55 :: 201128931 wowooW 32648twf.doc/n vbias來決定。並且電晶體m55將會依據 管區以進行操作。也就是說，在本實施例中=二極 可⑽為是-個通道切換電阻，而其電阻值的大 偏壓控制電感L55所提供的控制電壓所決定。、’、 同樣的’偏壓控制電感L56可以為電 制電壓’來控制電晶體M56的等效阻抗。這卿 ΠΪ，將可：由偏壓控制電仏6所接收的偏壓電廢L ’ ’、疋。亚且電晶體m56會依據控制電壓來在三極 = 進行^乍。也就是說，在本實施例中的電晶體·同= =視為疋-個通道切換電阻’ *其電崎的大小則是 壓控制電感L·56所提供的控制電壓所決定。 、 署^上^的說明可以得知，本實施_電壓控制振盛裝 =〇 ’並不會因為設置了電晶體M55、Μ%而使得參考電 ί置升高。換個角度來看，_控制振盤 降低功率系統電壓下進行操作，而有效的 另外’由電晶體Μ55、Μ56所產生的通道切換電阻可 m所:胃的源極退化電阻(source de_generated reS1Stor)。而本領域之—般習於此藝者都可以得知，此 極退化電阻的設置，將可以有效的改善交她合的電晶體 電路412的線性度，並減低交相麵合的電晶體電路4 閃爍雜訊，進而使得電壓控制振盪裝置4〇〇的相 特性得到改善。 巧 同時，在本實施例中，利用電感L55、L56來與電感電 201128931 uy«uu〇»rW 32648twf.doc/n 感電容共振電路411 h來舆電 :2中的電感)的品質因子上=值振::二The source of My is coupled to the solar energy system of the sacred temple to the phase-to-phase light-combined crystal. The 偏 is lightly connected: the system is connected to the V-vertical V-the other end. . The transistor μ56❸ source is lightly connected to the reference voltage (10)D, and the poles are connected to the phase-to-transistor circuit. It is to be noted here that the transistor λ has its 汲 迦 ( ( 10 10 10 10 10 10 = = = = = = = = 合 合 合 合 合 合 合 合 合 合 合 合 合 合 合 合 合 合 合 合The above reference voltage is the voltage of the system controlled by the voltage control. The bias control inductor L55 can provide the ten-value of the transistor core. It can be determined by the bias control inductor L55 :: 201128931 wowooW 32648twf.doc/n vbias. And the transistor m55 will operate according to the tube area. That is to say, in the present embodiment, the =2 pole (10) is a channel switching resistor, and the large bias voltage of the resistance value is determined by the control voltage supplied from the inductor L55. The same 'bias control inductor L56' can be the electrical voltage' to control the equivalent impedance of the transistor M56. In this case, the bias voltage L ’ ', 疋 received by the bias voltage control unit 6 will be available. The sub-transistor m56 will be operated at the three poles according to the control voltage. That is to say, in the present embodiment, the transistor·same == is regarded as the 疋-channel switching resistor ’*, and the magnitude of the galvanic is determined by the control voltage supplied from the voltage control inductor L·56. The description of the ^^^ can be known that the present embodiment _ voltage control vibrating device = 〇 ′ does not cause the reference voltage to rise due to the setting of the transistor M55, Μ%. From another point of view, the _ control oscillating disc operates at a lower power system voltage, and the effective channel switching resistance generated by the transistors Μ55, Μ56 can be: source de_generated reS1Stor. As can be seen in the art, the setting of the pole-degrading resistor can effectively improve the linearity of the transistor circuit 412 and reduce the phase-matching transistor circuit. 4 flickering noise, which in turn improves the phase characteristics of the voltage controlled oscillating device 4〇〇. At the same time, in the present embodiment, the inductance L55, L56 is used to inductive power 201128931 uy«uu〇»rW 32648twf.doc/n sense capacitance resonance circuit 411 h to charge: the inductance factor of 2) Value vibration:: two
控制振i裝置40G之整體的品質因子， U 裝置彻的相位雜訊特性，可以更進-步得 一 fjf控制振盪單元410相同的是，在電壓盪 早凡畑中，電感電容共振電路421係捕至 =及交_合電晶體電路422，交_合電晶 = 則係另外輕接至尾端雷政電路422 電感L57的一端係耦接至偏壓電壓％， ，制 ;;至電晶體M-的閑極。電晶體‘的源極俜輕= :電 vb.，而^山制電感L58的一端係轉接至偏屋電壓 體M58的源極係耦接至參考電壓G 私日日 接至交_合電晶體電路422。 H«則係輕 電壓控制振盪單元420的動作方式以及t ::係與電壓控制振盪單元41。相同的，町:不多： N型的:氧It電ί 中的電晶體M55,8均為 接著請參照圖5，圖5緣示本發明的另—實施例的電 201128931 υ>〇υυ〇〇ι>ν 32648twf.doc/n 壓控制振盪裝置500之_立因_ 括電壓控制振盈單元51^回、墨控制振盡袈置500包 則包括電感電容共振電路511 :電塵控制振盡單元510 :，路513。電編振二單512 合共振電路52:1、交相_ 、J匕括電感電 523。 耦〇電日日脰電路522以及尾端電硌 振C電略511中包括共振電感h、L5及故 饿冤谷c51、c52。共振恭戌 51 L52及共 參考電壓vDD，而共振：5152=-端係共同耦接至 -共振電感L為的二二:則係， srn’r同接收調整:的芯 “的電；:t;r電= 相位輪出信號I+、〒控籠羞料51G所產生的 父相隸合電晶體電丄 及M52。苴中，六如4人 貝丨匕括父相耦合電晶體m5] 電容趣h X她合電晶體M51的汲極_接至電巧 1'並域與共鱗仏及^電容C =二其，絲接至電晶體4。另外ΐ: 並且係與共振電感L52及共㈣路川’ 相耦合電晶體从的汲極係:7、5馬接。並且，交 閘極。而六知“ 係輕接父相輕合電晶體Μ5】的 且政之‘=電晶體Μ52的源極係耦接至電晶體Μ56， 極軸接至交相耦合電晶體Μ秦極。 W的父相_合電晶體μ5 1及μ5 2之源極與汲極的配 ’ rw 32648twf.doc/n 201128931 置關係是可以相互調換的。也就 ♦ 源極可以改為搞接至電感電容共振毛晶體M51及M5 2的 及Μ52的沒極則可以改為柄*至^路511 ’而電晶體]V[5! 定要偏限於須與圖5的繪示内容相^電路513，而並不— 尾端電路513則包括偏壓控制 體M55、M56。而本實施中的尾端=乂、56以及電晶 動方法’係、與前—實施财 =的構成方式與作 不多加說明。 毛柒電路413相同，在此則 另外’在電感電容共振電路521 k及共振電容C53、C54。共二振電感乙53、 糕接至參考電壓VDD，而共振電= L53、L54的—端係共同 別輕接至共振電感l53、L54的另H;4的—端則係分 的另—另鳊。共振電容c53、c54 乃&係相互触，並共同接 54 共振電容C53、Cs4為可鐡I六、，I窀’土 vt_。其中， C53、c54的+六佶\义_谷，並可以利用調整共振電容 之相位_壓控制振盡單元別所產生 之相位輪出信號Q+、q^頻率。 吓座生 父相_合電晶體電路522目丨—^ 及Μ54。其+，六相說1貝1包括父_合電晶體μ53 電容共振電路‘ "晶體Μ53的没極係輕接至電感 ίϋΐ: 曰體‘°另外，交 σ屯日日體M54的汲極係耦接至電感丘 521’並與共振電感[ 二，、振電路 交相糕人带日触“振弘谷〜共同輕接。同時， 。$阳體Mm的汲極係耦接至交相耦合電晶體％ 的閘極。而交相絲人♦曰 53 0包日日脰Μ；54的源極則係|馬接至電晶體Controlling the overall quality factor of the oscillatory device 40G, the phase noise characteristic of the U device can be further advanced, and the fjf control of the oscillating unit 410 is the same. In the voltage swinging, the inductor-capacitor resonant circuit 421 is captured. To = and _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ - The idle pole. The source of the transistor 'light is light = : electric vb., and one end of the mountain-made inductor L58 is switched to the source of the partial house voltage body M58 and is coupled to the reference voltage G. Circuit 422. H« is an operation mode of the light voltage control oscillation unit 420 and a t:: system and voltage control oscillation unit 41. The same, the town: not much: N-type: Oxygen It is the transistor M55, 8 in the vicinity, please refer to FIG. 5, and FIG. 5 shows the other embodiment of the present invention 201128931 υ> 〇υυ〇 〇ι>ν 32648twf.doc/n Pressure Control Oscillation Device 500_立因_ Included Voltage Control Vibration Unit 51^ Back, Ink Control Vibration Set 500 Pack includes Inductance and Capacitance Resonance Circuit 511: Dust Control Exhaustion Unit 510:, way 513. The electric oscillator two single 512 resonant circuit 52: 1, the phase _, J includes the inductor 523. The coupled electric day and day circuit 522 and the tail end electric current C 511 include the resonant inductances h, L5 and the hungry valleys c51 and c52. Resonance Gongyi 51 L52 and the common reference voltage vDD, and resonance: 5152 = - the end system is commonly coupled to the - resonance inductor L is the two two: the system, srn'r with the receiving adjustment: the core "electricity;: t ;r electric = phase wheel out signal I+, 〒 control cage shy material 51G generated by the father phase 电 电 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六 六h X her combined transistor M51's bungee _ connected to the electronic 1' parallel field and the common scale ^ and ^ capacitor C = two, the wire is connected to the transistor 4. In addition: and the resonance inductor L52 and a total (four) Luchuan 'phase-coupled transistor from the bungee line: 7, 5 horses. And, the gate. And the six knows "lightly connected to the father of the light and the transistor Μ 5] and the political '= transistor Μ 52 source The poles are coupled to the transistor Μ56, and the poles are connected to the AC-coupled transistor ΜQin. The relationship between the source of the W and the source of the U5 and μ5 2 and the bungee of the W are set to be mutually interchangeable. rw 32648twf.doc/n 201128931 In other words, the source can be switched to the inductor and capacitor resonance crystals M51 and M5 2 and the 没52 can be changed to the handle * to ^ 511 ' and the transistor] V [5! The circuit 513 is shown in FIG. 5, and the tail circuit 513 includes bias control bodies M55, M56. In the present embodiment, the configuration of the tail end = 乂, 56, and the electro-mechanical method, and the former-implementation fiscal = are not described. The burr circuit 413 is the same, and here, the inductor-capacitor resonant circuit 521 k and the resonant capacitors C53 and C54. A total of two vibration inductors B, the cake is connected to the reference voltage VDD, and the resonant power = L53, L54 - the end of the line is not connected to the resonant inductor l53, L54 of the other H; 4 - the end of the line is divided into another Hey. The resonant capacitors c53 and c54 are in contact with each other and are connected in common. 54 Resonant capacitors C53 and Cs4 are 鐡I6, I窀' soil vt_. Among them, C53, c54 + six 佶 \ _ _ valley, and can be adjusted by the phase of the resonant capacitor _ pressure control of the phase rotation signal generated by the phase rotation signal Q +, q ^ frequency. Sorrowful father _ _ crystal circuit 522 mesh - ^ and Μ 54. Its +, six phase said 1 shell 1 including the parent _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Μ 轻 轻 轻 Μ Μ Μ Μ Μ Μ Μ ° ° ° ° ° ° ° ° ° ° The system is coupled to the inductor 521' and is coupled to the resonant inductor [2, the vibration circuit is connected with the Japanese touch "Zhen Honggu~ common light connection. Meanwhile, the anode of the male body Mm is coupled to the cross coupling. The gate of the transistor is %. The phase is silky ♦ 曰 53 0 packs of sundays; the source of 54 is | horse connected to the transistor
LSI 13 201128931 32648twf.doc/n 58梯、之閘極係減至交_合電晶體Μ53的沒極。 、及’上述的交相耦合電晶體^及‘的源極盘 =極之配置關料可以被相互調換的。也就是說電曰曰體 ^曰，的祕可以改為祕至電感電容共振電路二 ^阳體M53 & m54躲極則可以改為祕至尾端電路 尾端電路523包括偏壓控制電感L57、L58以及電曰只 作5動方:實施例中的尾端電路523的構心LSI 13 201128931 32648twf.doc/n The gate of the ladder is reduced to the pole of the _53. And the above-mentioned cross-coupled transistors ^ and 'the source disk = the poles of the configuration can be interchanged. That is to say, the secret of the electric body, the secret can be changed to the inductor-capacitor resonance circuit II ^ Yang M53 & m54 can be changed to the secret to the end of the circuit circuit 523 including the bias control inductor L57 , L58 and eMule are only made to 5: the center of the tail circuit 523 in the embodiment
'係/、刖一實施例中的尾端電路423相同，在a 則不多加說明。 在11 本實施财，電壓控舰錄置係將電壓㈣ 510中的偏壓控制電感L55，與電壓控制振& 的共振電感L54耦合，將電壓控制振盪單元Μ 中的偏墨控制電感l56’與電壓控制振鮮元52〇中的」 ，電感h耦合，將電壓控制振盛單元52〇中的偏壓^ =感L57 ’與電壓控制振盪單元別中的共振電感^The tail circuit 423 in the embodiment is the same, and a is not described in detail. In the 11th implementation, the voltage control ship recording system couples the bias control inductor L55 in the voltage (4) 510 with the resonant inductor L54 of the voltage control oscillator & and controls the partial ink control inductor l56' in the voltage control oscillation unit Μ. "In the voltage control oscillating element 52", the inductance h is coupled, and the voltage in the voltage control oscillating unit 52 ^ ^ = sense L57 ' and the resonant inductor in the voltage control oscillating unit ^
將電壓控制録單元52()中的驗控制電感& j壓控制振鮮元51G中的共振電感L⑽合，進㈣ 電=制振鮮元51〇、52()分別產生不同相位的相位㈣ 仏戒1+、I-以及Q+、Q_。 、、示上所述，本發明藉由在多個電壓控制振盡單元中， 配置由偏壓㈣電感及電晶體_成的尾端電路，而使得 ^電壓控餘料元，可以尾端電路的偏壓控制電 感，來與相鄰的電感電容共振電路互相耦合，以進一步產 14 201128931 V7〇uuu〇rw 3264Stwf.doc/n 生多個不_位的相位輸出信號 ==作依r_壓所提供的 ====;=操作可 相位雜, m匕制振盛裝置具有優良的 偏===降低其功率的消耗。另外，透過 ^ ^ 1 、D°質因子的設計，則可以使電壓押制据盪 訊的特性得到更進—步的改善。 # 本發明，任何所屬括=例揭路如上’然其並非用以限定 本發明之精神和範圍術領域中具有通常知識者，在不脫離 發明之保護範圍告、胃内，當可作些許之更動與潤飾，故本 ㈣之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1繪示一種習 置100。 的並聯耦合四相位電壓控制振盪裝 圖2 %示—種 • 圖3妬浴 自知的電壓控制振盡裝置200。 300。 〜種習知的四相位電壓控制振盪裝置 圖4繪示本發明 的示意圖。 ^的—實施例的電壓控制振盪裝置400 圖5續'示本私日日^ 500的示意圖。'月的另一實施例的電壓控制振盪裝置 32648twf.doc/n 201128931 【主要元件符號說明】 100、200、300、400、500 :電壓控制振盪裝置 410、 420、510、520 :壓控制振盪單元 411、 421、511、521 :電感電容共振電路 412、 422、512、522 :交相耦合電晶體電路 413、 423、513、523 :尾端電路 Vbias :偏壓電壓 VDD、GND :參考電壓 Vtune :調整電壓 Vdd :系統電壓 12+、12_、Q2+、Q2_、1+、1_、Q+、Q_ :輸出信號 M21〜M58 .電晶體 C21〜C58 :電容 L21〜L58 :電感The resonant inductance L(10) in the voltage control unit 52() is combined with the resonant inductance L(10) in the control element 51G, and the fourth phase is generated. (4) The voltages of the modulating elements 51〇 and 52() respectively generate phases of different phases (4)仏 ring 1+, I- and Q+, Q_. As shown in the above description, the present invention configures a tail-end circuit formed by a bias voltage (four) inductor and a transistor in a plurality of voltage-controlled oscillating units, so that the voltage-controlled residual element can be a tail-end circuit. The bias control inductor is coupled to the adjacent inductor-capacitor resonant circuit to further produce 14 201128931 V7〇uuu〇rw 3264Stwf.doc/n multiple phase output signals without _ bits == by r_pressure The provided ====;= operation can be phase miscellaneous, and the m匕 vibrating device has excellent bias === reducing its power consumption. In addition, through the design of the ^ ^ 1 and D° quality factors, the characteristics of the voltage-based sway can be further improved. The invention is not limited to the spirit and scope of the invention, and may be used in the stomach without any departure from the scope of the invention. It is subject to change and refinement, so the scope of the patent application scope of this (4) shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates a prior art 100. The parallel-coupled four-phase voltage-controlled oscillating device is shown in Fig. 2. Fig. 3 妒 Bath The self-known voltage control oscillating device 200. 300. A conventional four-phase voltage controlled oscillating device Fig. 4 is a schematic view of the present invention. The voltage-controlled oscillating device 400 of the embodiment of FIG. 5 continues to show a schematic diagram of the private day ^ 500. Voltage-controlled oscillating device of another embodiment of the month 32648twf.doc/n 201128931 [Description of main component symbols] 100, 200, 300, 400, 500: voltage-controlled oscillating devices 410, 420, 510, 520: voltage-controlled oscillating unit 411, 421, 511, 521: Inductance and capacitance resonance circuits 412, 422, 512, 522: cross-coupled transistor circuits 413, 423, 513, 523: tail circuit Vbias: bias voltage VDD, GND: reference voltage Vtune: Adjust voltage Vdd: system voltage 12+, 12_, Q2+, Q2_, 1+, 1_, Q+, Q_: output signals M21~M58. Transistors C21~C58: Capacitors L21~L58: Inductors
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