201126739 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種太陽能電池製造程序用濕式蝕刻機， 尤其關於一種能夠減少更換蝕刻液頻率的太陽能電池製造 程序用濕式|虫刻機。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wet etching machine for a solar cell manufacturing process, and more particularly to a wet type insecticidal machine for a solar cell manufacturing program capable of reducing the frequency of replacing an etching solution.
【先前技術】 濕式蝕刻是常被使用的蝕刻技術，它是利用酸混合溶 液’例如氫紐（HF)混合溶液’對晶圓進行的化學侧， 其優點在於製料純、侧成本低、產率(ThrQughput)高以及 可罪性佳等。為了延長侧液的使用壽命，太陽能電池製造 私序中所使肖之献侧勤(Wet StatiGn)，通技使用具有 程序槽和緩衝槽結構之濕式蝕刻循環槽系統。 圖1顯示習知太陽能電池製造程相赋_機的示意 圖。如圖1所示，太陽能電池製造程序賴式_機1〇〇包 含—程序槽no及-緩衝槽12G。程序槽⑽包含_處理槽 ui及-溢储m。太陽能電池製造程賴濕式糊機觸 進仃細作時，财晶紐1G置於處理槽m +，綱液會對 石夕晶基板10 it行侧，因而造成餘刻液的酸濃度下降:此 201126739 時’利用一泵131抽取緩衝槽120中的蝕刻液，經過泵131 的加壓後，將蝕刻液供給至程序槽110的處理槽111，以維 持處理槽111的濃度。處理槽111置於溢流槽112内部，且 溢流槽112的壁面高於處理槽111的壁面，當處理槽in中 的蝕刻液過量（如圖1所示之溢流S)時會溢出處理槽111， 而流至溢流槽112内，最後再從溢流槽112流至緩衝槽120。 當緩衝槽120中的酸溶液的濃度未達某一預定值時，則 必須更換餘刻液。更換蝕刻液時，有時候需將太陽能電池製 造程序用濕式蝕刻機1〇〇停機，再利用泵132排放緩衝槽120 中的酸溶液’並打開泵133將新的蝕刻液送入緩衝槽120中。 通常緩衝槽120中蝕刻液是使用硝酸（hn〇3)和氫氟 酸（HF )，其初始濃度設定分別為濃度、 ^^49% ;其初始比重分別為HN03=1.4卜HF=1.17。加入 緩衝槽120中的水量（H2〇-Di)為175.27L，HN〇3量為 204.26L ’ HF量100.47L ’因此初始狀態下，緩衝槽丨2〇之 姓刻液之各種酸的濃度分別為HNO3=420 g/L、HF=120 g/L。 圖2A及2B分別顯示依據習知技術，產量與緩衝槽中蝕刻液 濃度兩者間的關係圖。如圖2A及2B所示，當產量為40萬 片時則必須更換蝕刻液。 【發明内容】 201126739 本發明-實施例之目的在於提供一種能夠減少更換麵 刻液頻率的太陽能電池製造程序用濕式鞋刻機。 依據本發明-實_，提供—歡池製造程序用 濕式_機其包含-程序槽、—緩衝槽、—第—自動系、— 第二自躲及-控制器。程序槽儲存有—_液，用以對多 數的矽晶基板進行_。緩_儲存摊職，其中緩衝ζ • 中的_液被一泵抽取至程序槽中，並接收程序槽中過量^ 蝕刻液。第-自練連通於緩衝槽，扣排魏衝槽中的餘 刻液。第二自動泵連通於緩衝槽’用以將新的一钱刻液系加 入緩衝槽中°控制器雛於第—自動泵及第二自動泵，用以 控制第-自動泵及第二自動泵，藉以㈣添加人緩衝槽之新 的侧液的流量；以及排放出緩衝槽的舰刻液的流量。 於-貫施例中，添加入緩衝槽之新的姓刻液的流量，大 •致等於排放出緩衝槽的姓刻液的流量。 於貝施例中’控制器更儲存有一預設製程參數，統古十 太陽能電池製造程序職絲職目前的製程參數，當目前 的製程參數等於或大於預設製程參數時，於—預定_期間 内打開第-自動果及第二自動粟至一預定開口大小。 於-實施财’太電池製造程序職式侧機更包 含-流量計，流量計連通於第—自練，用以測量緩衝槽中 被第一自動泵排出之侧㈣流量。較佳的情岐，控制器 201126739 更接收流量計測得之被第一自動泵排出之蝕刻液的流量，當 通過被第一自動泵排出之蝕刻液的流量，大於一預設值時關 閉第一自動泵及第二自動泵。 於一實施例中，控制器更將目前的製程參數歸零，並再 次重新統計目前的製程參數。 依據本發明一實施例，係於太陽能電池製造程序用濕式 餘刻機的操作触巾’對麟槽添加人新祕舰並排放出 舊敍刻液的流量，能_少了太陽能f池製造程序用濕式韻 刻機停機_率，增加了太電雜造程序賴式钮刻機 的稼動率，進吨職能增加 '減少製造成本的效果。。 本發明的其他目的和優點可以從本發明所揭露的技術 特徵中得到進-步的了解。為讓本發明之上述和其他目的、 特徵和優點能更明顯易懂，下文特舉實施例並配合所附圖 式’作詳細說明如下。 【實施方式】 圖3顯示依本剌—實_之太陽能電_造程序用濕 雜刻機的示意圖。如圖3所示，依本發明-實施例之，太 陽能電池製造程序用濕式_機包含_程序槽別及一 缓衝=〇。程序物包含—處理槽211及—溢流槽212。 太―電池製造程序用濕式钱刻機2〇〇進行操作時，將石夕晶 201126739 基板10置於處理槽211中，以對矽晶基板1〇進行蝕刻。當 處理槽211中蝕刻液濃度不夠時，利用一泵231抽取緩衝槽 22〇中的蝕刻液’並將其供給至處理槽211，以維持處理槽 211的蝕刻液濃度。處理槽211置於溢流槽212内部，且溢 流槽212的壁面高於處理槽211的壁面，當處理槽lu的蝕 刻液產生溢流s時，能夠使溢流s流至溢流槽212内，再從 溢流槽212流至緩衝槽220。 於本實施例中，太陽能電池製造程序用濕式蝕刻機2〇〇 還包含一第一自動泵241、一第二自動泵242及一控制器 240第自動泵241連通於緩衝槽220以排放緩衝槽220 中的蝕刻液。第二自動泵242連通於緩衝槽22〇以將新的蝕 刻液添加入緩衝槽220中。控制器240耦接於第一自動泵241 及第二自動泵242，用以控制該些自動泵241及242的開口 大小及流通期間，進而能夠控制添加入緩衝槽22〇的蝕刻液 的流量、及排放出緩衝槽220的蝕刻液的流量。較佳的情況 是，使添加入緩衝槽220的蝕刻液的流量大致等於排放出緩 衝槽220的蝕刻液的流量。 圖4顯示依本發明一實施例之太陽能電池製造程序用濕 式蝕刻機的示意圖。圖4實施例之太陽能電池製造程序用濕 式蝕刻機200a相似於圖3實施例之太陽能電池製造程序用濕 式蝕刻機200，因此相同的元件使用相同的符號，並省略其 201126739 相關的說明，以下僅說明兩實施例的相異處。於本實施例 中，太陽能電池製造程序用濕式蝕刻機2〇〇a更包含一流量計 244。流量計244連通於第一自動泵24卜用以測量緩衝槽 220中被第一自動泵241排出之钮刻液的排出量qs。流量計 244亦耦接於控制器240 ’並將所測得之排出量qs傳送至控 制器240。當控制器240判斷流量計244所測得之排出量Qs 大於一預定值時，則關閉第一自動泵241及第二自動泵242， 使該些自動泵241及242停止對緩衝槽220添加或排放蝕刻 液。 於圖3實施例中’雖然控制器240可以依據自動泵241 及242的開口大小及流通期間’來推知緩衝槽22〇之蝕刻液 的添加量及排放量，但此方法的流量精確度較不準確。於圖 4實施例中，增設一流量計244，能夠較精確地計算緩衝槽 220之钱刻液的添加量及排放量。於一實施例中，亦可以再 增設一流量計（未圖示），使此流量計連通第二自動泵242， 用以測量通過第二自動泵242的流量。 最後，當缓衝槽220中的酸溶液的濃度未達某一預定值 時’則可利用泵232排放緩衝槽220中的酸溶液，將新的蝕 刻液送入緩衝槽220中。 圖6顯示依本發明一實施例太陽能電池製造程序用濕式 颠刻機之控制器的自動排酸方法的流程圖。如圖6所示，於 201126739 一貫:种，控制器240之自動排酸方法的包含以下步驟。 ^步驟S〇2 :儲存一預設製程參數於控制器240中^箱 設=程參數可以為太陽能電池製造程序職趣刻機的一 預°又操作時間或者預設處理片數（晶圓）。 、 、_】步驟S04 :統計太陽能電池製造程序用濕式姓刻機目前 =製程參數’亦即統計太陽能電池製造程相濕式餘刻機目 前的操作時間或者處理片數。 步驟S06 :比較預設製程參數及目前的製程參數當目 别的製程參數雜或大㈣設製程參數時，於-預定流通期 間内，打開第一自動泵241及第二自動泵242至一預定開口 大小，以對緩衝槽220添加及排放钱刻液，隨後執行下一步 驟。當目前的製程參數小於預設製程參數時，執行步驟S04， 持續統計太陽能電池製造程序用濕式蝕刻機目前的製程參 數。 步驟S08 :接收利用一流量計所測得之通過第一自動泵 241或第二自動泵242的蝕刻液的流量，當通過第一自動泵 241及第二自動泵242的钱刻液的該流量，大於一預設值時 關閉第一自動泵241及第二自動泵242。 步驟S10 ··將前述目前的製程參數歸零後，執行步驟 S04，再次重新統計目前的製程參數。 圖5A及5B分別顯示依據本發明一實施例，產量與緩 201126739 衝槽中蝕刻液濃度兩者間的關係圖。更具體而言，緩衝槽22 〇 中餘刻液是使用硝酸（ΗΝ〇3)和氫氟酸（HF)，其初始濃度 設定分別為濃度HN〇3=70%、HF=49% ;其初始比重分別為 HN03=1.41、HF=1.17。於初始狀態下，緩衝槽22〇中的水 量（H20-Di)為 175.27L’HN03 量為 204.26L，HF 量 100.47L。 發明人進行測試實驗，每日自動排放10L緩衝槽220中的钱 刻液’並添加10L之新的蝕刻液於緩衝槽220中，緩衝槽22〇 中硝酸和氫氟酸之濃度的變化結果如圖5A及5B所示曲線。 請參照圖5A及5B，依本發明一實施例，當產量為4〇萬片 時，緩衝槽220蝕刻液之硝酸（hn〇3)和氫氟酸（HF)的 濃度，尚維持在一定值以上，僅有在產量為8〇萬片時才需 更換緩衝槽220中的_液。因此，延長了緩衝槽22〇中的 姓刻液的使用壽命，減少更換蝕刻液的時機。 依據本發明—實關，係於太陽能電池製造程序用濕式 侧機的操作難巾，·_添加人__液並排放出 舊钱刻液的流量，因此能夠減少了太陽能電池製造程序用濕 式侧機停_醉，增加了太陽能電池製造程序用濕式麵 刻機的稼鱗’進喊職能增加、減少製造成本的效果。 雖然本發明已續佳實侧揭露如上，財並非用以限 定本發明，任何熟習此技藝者，衫脫離本發明之精神和範 圍内，當可作些許之更動與潤飾，因此本發明之保護範圍當 201126739 視後附之申請專利範圍所界定者為準。另外，本發明的任 實施例或㈣補制顿達成本發_揭露之全部目的 或優點或獅。此外，摘要部分和標_如_助專利文 件搜尋之用，並_來關本發明之權利範圍。 f圖式簡單說明】 • 圖1顯示習知太陽能電池製造程序用濕式餘刻機的示意 圖。 圖2A及2B分別顯示依據習知技術，產量與緩衝槽中 蝕刻液濃度兩者間的關係圖。 圖3顯示依本發明一實施例之太陽能電池製造程序用濕 式蝕刻機的示意圖。 圖4顯示依本發明一實施例之太陽能電池製造程序用濕 式钱刻機的示意圖。 圖5A及5B分別顯示依據本發明一實施例，產量與缓 衝槽中蝕刻液濃度兩者間的關係圖。 圖6顯示依本發明一實施例太陽能電池製造程序用濕式 餘刻機之控制器的自動排酸方法的流程圖。 【主要元件符號說明】 201126739[Prior Art] Wet etching is a commonly used etching technique, which is a chemical side of a wafer by using an acid mixed solution such as a hydrogen hydride (HF) mixed solution, which has advantages in that the material is pure and the side cost is low. The yield (ThrQughput) is high and the sinfulness is good. In order to extend the service life of the side liquid, Wet StatiGn is used in the private order of solar cell manufacturing, and a wet etching circulation groove system having a program tank and a buffer tank structure is used in the technique. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing a conventional solar cell manufacturing process. As shown in Fig. 1, the solar cell manufacturing program includes a program slot no and a buffer tank 12G. The program slot (10) contains _ processing slots ui and - overflow m. When the solar cell manufacturing process relies on the wet paste machine to touch the fine work, the Caijing New 1G is placed in the treatment tank m + , and the liquid will be on the side of the 10th row of the Shi Xijing substrate, thus causing the acid concentration of the residual liquid to drop: At 201126739, the etchant in the buffer tank 120 is extracted by a pump 131, and after being pressurized by the pump 131, the etchant is supplied to the processing tank 111 of the program tank 110 to maintain the concentration of the processing tank 111. The treatment tank 111 is placed inside the overflow tank 112, and the wall surface of the overflow tank 112 is higher than the wall surface of the treatment tank 111, and overflows when the etching liquid in the treatment tank in is excessive (such as the overflow S shown in Fig. 1). The tank 111 flows into the overflow tank 112 and finally flows from the overflow tank 112 to the buffer tank 120. When the concentration of the acid solution in the buffer tank 120 does not reach a predetermined value, the residual liquid must be replaced. When the etching solution is replaced, sometimes the solar cell manufacturing process is stopped by the wet etching machine, and then the pump 132 is used to discharge the acid solution in the buffer tank 120 and the pump 133 is turned on to send the new etching liquid to the buffer tank 120. in. Generally, the etching solution in the buffer tank 120 is made of nitric acid (hn〇3) and hydrofluoric acid (HF), and the initial concentration is set to a concentration of ^^49%; the initial specific gravity is HN03=1.4 Bu HF=1.17, respectively. The amount of water (H2〇-Di) added to the buffer tank 120 is 175.27L, and the amount of HN〇3 is 204.26L 'HF amount 100.47L'. Therefore, in the initial state, the concentrations of various acids in the buffer tank 丨2〇 are respectively It is HNO3=420 g/L and HF=120 g/L. 2A and 2B are graphs showing the relationship between the yield and the concentration of the etchant in the buffer tank, respectively, according to the prior art. As shown in Figs. 2A and 2B, when the yield is 400,000 sheets, the etching liquid must be exchanged. SUMMARY OF THE INVENTION 201126739 An object of the present invention is to provide a wet shoe engraving machine for a solar cell manufacturing program capable of reducing the frequency of replacement of a face. According to the present invention, the present invention provides a wet-machine manufacturing program using a wet type machine including a program slot, a buffer tank, a first automatic system, a second self-hiding and a controller. The program slot stores - liquid for performing _ on most of the twin substrates. The _ liquid storage tank is pumped into the program tank by a pump and receives excess etchant in the program tank. The first self-training is connected to the buffer tank, and the residual liquid in the Wei rushing tank is deducted. The second automatic pump is connected to the buffer tank to add a new one of the money to the buffer tank. The controller is adapted to the first automatic pump and the second automatic pump for controlling the first automatic pump and the second automatic pump. By (4) adding the flow rate of the new side liquid of the human buffer tank; and discharging the flow rate of the ship's engraving liquid from the buffer tank. In the example, the flow rate of the new surname engraved into the buffer tank is equal to the flow rate of the surname of the buffer tank. In the case of the Beishi, the controller stores a preset process parameter, and the current process parameters of the Tonggu solar cell manufacturing program are the current process parameters. When the current process parameters are equal to or greater than the preset process parameters, during the -predetermined process period The first-automatic fruit and the second automatic millet are opened to a predetermined opening size. In the implementation of the 'Taiwan battery manufacturing program, the side machine further includes a flow meter, and the flow meter is connected to the first self-training to measure the flow in the buffer tank on the side (4) discharged by the first automatic pump. Preferably, the controller 201126739 further receives the flow rate of the etchant discharged by the first automatic pump measured by the flow meter, and turns off the first time when the flow rate of the etchant discharged by the first automatic pump is greater than a preset value. Automatic pump and second automatic pump. In one embodiment, the controller further zeros the current process parameters and re-statistics the current process parameters. According to an embodiment of the present invention, the operating towel of the wet type engraving machine is used in the solar cell manufacturing process to add a new secret ship to the lining tank and discharge the flow of the old syllabary fluid, which can reduce the production of the solar energy pool. The program uses the wet rhyme machine to stop the _ rate, which increases the utilization rate of the electric machine's Lai-style button engraving machine, and increases the effect of reducing the manufacturing cost. . Other objects and advantages of the present invention will be apparent from the technical features disclosed herein. The above and other objects, features, and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] Fig. 3 is a view showing a wet etching machine for solar power-making according to the present invention. As shown in Fig. 3, in accordance with the present invention-embodiment, the solar cell manufacturing program includes a program slot and a buffer = 〇. The program includes a processing tank 211 and an overflow tank 212. When the battery manufacturing program is operated by the wet money engraving machine, the Shishijing 201126739 substrate 10 is placed in the processing tank 211 to etch the twin crystal substrate 1 . When the concentration of the etching liquid in the processing tank 211 is insufficient, the etching liquid ' in the buffer tank 22' is extracted by a pump 231 and supplied to the processing tank 211 to maintain the etching liquid concentration of the processing tank 211. The treatment tank 211 is placed inside the overflow tank 212, and the wall surface of the overflow tank 212 is higher than the wall surface of the treatment tank 211. When the etching liquid of the treatment tank lu generates the overflow s, the overflow s can be caused to flow to the overflow tank 212. Then, it flows from the overflow tank 212 to the buffer tank 220. In the embodiment, the solar cell manufacturing program further includes a first automatic pump 241, a second automatic pump 242, and a controller 240. The automatic pump 241 is connected to the buffer tank 220 to discharge the buffer. The etchant in the bath 220. The second automatic pump 242 is in communication with the buffer tank 22A to add a new etching liquid into the buffer tank 220. The controller 240 is coupled to the first automatic pump 241 and the second automatic pump 242 for controlling the opening size and the circulation period of the automatic pumps 241 and 242, and further controlling the flow rate of the etching liquid added to the buffer tank 22, And the flow rate of the etching liquid that discharges the buffer tank 220. Preferably, the flow rate of the etching liquid added to the buffer tank 220 is made substantially equal to the flow rate of the etching liquid discharged from the buffer tank 220. Fig. 4 is a view showing a wet etching machine for a solar cell manufacturing process according to an embodiment of the present invention. The wet etching machine 200a for the solar cell manufacturing process of the embodiment of FIG. 4 is similar to the wet etching machine 200 for the solar cell manufacturing process of the embodiment of FIG. 3, and therefore the same elements are denoted by the same reference numerals, and the description thereof related to 201126739 is omitted. Only the differences between the two embodiments will be described below. In the present embodiment, the solar cell manufacturing process further includes a flow meter 244 using the wet etching machine 2A. The flow meter 244 is connected to the first automatic pump 24 for measuring the discharge amount qs of the button in the buffer tank 220 discharged by the first automatic pump 241. The flow meter 244 is also coupled to the controller 240' and transmits the measured discharge amount qs to the controller 240. When the controller 240 determines that the discharge amount Qs measured by the flow meter 244 is greater than a predetermined value, the first automatic pump 241 and the second automatic pump 242 are turned off, so that the automatic pumps 241 and 242 stop adding to the buffer tank 220 or Drain the etchant. In the embodiment of FIG. 3, although the controller 240 can infer the addition amount and the discharge amount of the etching liquid in the buffer tank 22 according to the opening size and the circulation period of the automatic pumps 241 and 242, the flow accuracy of this method is less. accurate. In the embodiment of Fig. 4, a flow meter 244 is additionally provided, which can accurately calculate the amount of addition and the amount of money engraved in the buffer tank 220. In an embodiment, a flow meter (not shown) may be further added to connect the flow meter to the second automatic pump 242 for measuring the flow rate through the second automatic pump 242. Finally, when the concentration of the acid solution in the buffer tank 220 does not reach a predetermined value, the pump 232 can be used to discharge the acid solution in the buffer tank 220 to feed the new etching solution into the buffer tank 220. Fig. 6 is a flow chart showing the automatic acid discharging method of the controller for a wet-tipped machine for manufacturing a solar cell according to an embodiment of the present invention. As shown in Fig. 6, in the case of 201126739, the automatic acid removal method of the controller 240 includes the following steps. ^Step S〇2: Store a preset process parameter in the controller 240. The box parameter can be a pre-operation time or a preset processing number (wafer) of the solar cell manufacturing program. . , , _] Step S04: Statistical solar cell manufacturing procedure uses wet type engraving machine current = process parameter', that is, the current operating time or number of processed wafers of the solar cell manufacturing process phase wet remanufacturing machine. Step S06: Comparing the preset process parameters with the current process parameters, when the process parameters of the target are mixed or large (4), the first automatic pump 241 and the second automatic pump 242 are opened to a predetermined time during the predetermined circulation period. The opening is sized to add and discharge the engraving liquid to the buffer tank 220, and then the next step is performed. When the current process parameter is less than the preset process parameter, step S04 is performed to continuously count the current process parameters of the wet etching machine for the solar cell manufacturing process. Step S08: receiving a flow rate of the etchant passing through the first automatic pump 241 or the second automatic pump 242 measured by a flow meter, and the flow rate of the money etched through the first automatic pump 241 and the second automatic pump 242 When the value is greater than a preset value, the first automatic pump 241 and the second automatic pump 242 are turned off. Step S10 · After zeroing the foregoing current process parameters, step S04 is performed to re-count the current process parameters. 5A and 5B are graphs showing the relationship between the yield and the concentration of the etching solution in the punching groove of 201126739, respectively, according to an embodiment of the present invention. More specifically, the buffer solution 22 is made of nitric acid (ΗΝ〇3) and hydrofluoric acid (HF), and the initial concentration is set to the concentration HN〇3=70%, HF=49%; The specific gravity is HN03=1.41 and HF=1.17. In the initial state, the amount of water (H20-Di) in the buffer tank 22 is 175.27 L'HN03, the amount is 204.26 L, and the HF amount is 100.47 L. The inventor conducted a test experiment, automatically discharging the money engraving liquid in the 10 L buffer tank 220 every day and adding 10 L of new etching liquid to the buffer tank 220. The variation of the concentration of nitric acid and hydrofluoric acid in the buffer tank 22 was as follows. The curves shown in Figures 5A and 5B. Referring to FIGS. 5A and 5B, according to an embodiment of the present invention, when the yield is 40,000 pieces, the concentration of nitric acid (hn〇3) and hydrofluoric acid (HF) in the buffer tank 220 etching solution is maintained at a certain value. In the above, the liquid in the buffer tank 220 needs to be replaced only when the output is 80,000 pieces. Therefore, the life of the surname in the buffer tank 22 is prolonged, and the timing of replacing the etching liquid is reduced. According to the present invention, the actual operation is based on the operation of the wet side machine in the solar cell manufacturing process, and the flow of the old money etchant is discharged, thereby reducing the wetness of the solar cell manufacturing process. The side machine stops _ drunk, which increases the effect of increasing the manufacturing cost and increasing the manufacturing cost of the solar cell manufacturing process using the wet-faced machine. Although the present invention has been described above in detail, it is not intended to limit the present invention, and any person skilled in the art will be able to make some modifications and refinements when the present invention is within the spirit and scope of the present invention. When 201126739 is defined as defined in the scope of the patent application, it is subject to change. In addition, any of the embodiments or (4) of the present invention achieves all of the objects or advantages of the present invention. In addition, the summary section and the ___ help patent file search, and _ to the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a conventional wet cell engraving machine for a solar cell manufacturing process. 2A and 2B are graphs showing the relationship between the yield and the concentration of the etching solution in the buffer tank, respectively, according to the prior art. Fig. 3 is a view showing a wet etching machine for a solar cell manufacturing process according to an embodiment of the present invention. Fig. 4 is a view showing a wet type engraving machine for a solar cell manufacturing process according to an embodiment of the present invention. 5A and 5B are graphs showing the relationship between the yield and the concentration of the etching solution in the buffer tank, respectively, according to an embodiment of the present invention. Fig. 6 is a flow chart showing an automatic acid discharging method of a controller for a wet type engraving machine for a solar cell manufacturing program according to an embodiment of the present invention. [Main component symbol description] 201126739
10 砍晶基板 100 太陽能電池製造程序用濕式蝕刻機 110 程序槽 111 處理槽 112 溢流槽 120 緩衝槽 131-133 泵 200 太陽能電池製造程序用濕式蝕刻機 200a 太陽能電池製造程序用濕式蝕刻機 210 程序槽 211 處理槽 212 溢流槽 220 緩衝槽 231-232 泵 240 控制器 241 第一自動泵 242 第二自動泵 244 流置計 [s] 1310 Chopped substrate 100 Solar cell manufacturing program with wet etching machine 110 Program slot 111 Processing tank 112 Overflow tank 120 Buffer tank 131-133 Pump 200 Solar cell manufacturing program with wet etching machine 200a Solar cell manufacturing program with wet etching Machine 210 Program slot 211 Processing tank 212 Overflow tank 220 Buffer tank 231-232 Pump 240 Controller 241 First automatic pump 242 Second automatic pump 244 Flow meter [s] 13