201125032 六、發明說明： 【發明所屬之技術領域】 發明領域 本發明係有關於-種供在處理晶圓的期間使用之方法 與儀器。特別地，但並不排外地，本發明係'有關於一種用 於促進從包含數個晶圓之—陣列來移除個別的晶圓之方法 與儀器。 發明背景 供使用於，舉例而言，製造半導體裝置(例如太陽電池) 的石夕晶圓典型地储由切割—料所形成以便於生產—些 個別的晶圓。切割製程慣例地為—多道線切割方涂。該石夕 塊係使用-黏合劑予以結合至—玻璃板以及該切割製程係 以該矽塊被不動地固定至該玻璃板而予以執行。鋸子徹底 地切削通過該矽塊以及所形成的晶圓各個藉由該黏合劑而 保持附著該玻璃板。於典型的實例中，該切割製程會創造 數百個 >專的石夕晶圓（具有介於1〇〇和3〇〇 um之間的寬度），各 個係由大概100至200 um的距離予以分隔開。 一旦該矽塊已經被切削而形成個別的矽晶圓，該等矽 晶圓必須被清潔以及從該基材移除。該等矽晶圓係，舉例 而言使用熱稀釋有機酸，例如乳酸，予以脫膠，以將該等 晶圓從該玻璃板分隔開。個別的矽晶圓隨後予以單離(稱作 為“剪切（singulation)”）以供使用於隨後的製造步驟。 在以上概述的程序的期間之各個時刻，液體係被引入 201125032 ^夕aaU之間。更確切地，該發塊典型地係於闕環境切 」以及Ik後的清潔和脫膠製程係與顏有關聯。所以，該 等夕b曰圓為>||的’其意指其等由於毛細管作用和表面張力 的致應而傾向要聚集在—起成堆。 該等晶圓的此聚集可以造成於該製程之各種階段的困 難。舉例而言’其可以妨礙當必須時清潔液體通過該等晶 圓之間以有效地清潔該等晶圓。 另一個困難發生在該等矽晶圓已經從該玻璃板予以脫 .之後。一旦被脫膠’任何破裂的晶圓被手工移除以及該 等剩餘的晶圓係藉由手予以清潔來移除該黏合劑之任何的 殘餘物。該等晶圓接而被手工地直接堆疊於彼此的頂部之 上以形成一致的堆。該堆中的晶圓係被支撐於一卡匣中， 且鄰接的晶圓在其等之整個大的表面之上為彼此接觸的。 該等晶圓可以使用一自動化製程從該堆移除。然而，介於 鄰接的晶圓的表面之間的毛細管作用和表面張力可以使得 刀隔開έ玄專晶圓成為困難的。此可以導致過度大的力必須 施加來分開該等晶圓，以及此可以導致當其等係從該堆予 以移除時該等晶圓的一些之破裂。該生產製程可能必須暫 停來移除破裂的晶圓以及此可以造成延遲且增加操作上的 成本。 本發明’至少於較佳具體例中’企圖克服或改良與習 知技藝的技術與儀器有關聯的至少一些問題。 【明内溶1】 發明概要 201125032 從第一個態樣來看，本發明係有關於一種處理數個晶 圓的方法，S亥方法包含以下步驟： 提供數個晶圓，各晶圓係結合至一基材沿著一第—邊 緣； 支撐該等晶圓於其等之邊緣處於一支撐架之内以便於 維持鄰接的晶圓之間的空間；以及201125032 VI. Description of the Invention: [Technical Field of the Invention] Field of the Invention The present invention relates to a method and apparatus for use during processing of a wafer. In particular, but not exclusively, the present invention is directed to a method and apparatus for facilitating the removal of individual wafers from an array comprising a plurality of wafers. BACKGROUND OF THE INVENTION For use, for example, in the fabrication of semiconductor devices (e.g., solar cells), the lithographic wafers are typically formed by cutting materials to facilitate the production of individual wafers. The cutting process is conventionally a multi-line cutting method. The stone block is bonded to the glass plate using a binder and the cutting process is performed by the block being fixedly fixed to the glass plate. The saw is thoroughly cut through the block and the formed wafers are each held attached to the glass by the adhesive. In a typical example, the cutting process creates hundreds of specialized stone wafers (with a width between 1〇〇 and 3〇〇um), each with a distance of approximately 100 to 200 um. Separate. Once the blocks have been cut to form individual tantalum wafers, the wafers must be cleaned and removed from the substrate. The germanium wafer systems, for example, are degummed using a thermally dilute organic acid, such as lactic acid, to separate the wafers from the glass sheet. Individual tantalum wafers are then singulated (referred to as "singulation") for use in subsequent fabrication steps. At various times during the period outlined above, the liquid system was introduced between 201125032 and DAYA. Rather, the hair piece is typically tied to the environment and the cleaning and degumming process after Ik is associated with the hair. Therefore, the 曰b曰 circle is >||, which means that it tends to gather in a pile due to capillary action and surface tension. This accumulation of such wafers can cause difficulties in various stages of the process. For example, it can prevent cleaning liquid from passing between the crystals when necessary to effectively clean the wafers. Another difficulty occurs after the wafers have been removed from the glass sheet. Once any of the broken wafers are manually removed and the remaining wafers are cleaned by hand, any residue of the adhesive is removed. The wafers are then manually stacked directly on top of each other to form a uniform stack. The wafers in the stack are supported in a cassette, and adjacent wafers are in contact with each other over their entire large surface. The wafers can be removed from the stack using an automated process. However, capillary action and surface tension between the surfaces of adjacent wafers can make it difficult to separate the knives from the knives. This can result in excessively large forces that must be applied to separate the wafers, and this can result in cracking of some of the wafers as they are removed from the stack. This manufacturing process may have to be paused to remove cracked wafers and this can cause delays and increase operational costs. The present invention is intended to overcome or ameliorate at least some of the problems associated with the techniques and apparatus of the prior art. [Introduction 1] Summary of Invention 201125032 From the first aspect, the present invention relates to a method for processing a plurality of wafers, the S Hai method comprising the steps of: providing a plurality of wafers, each wafer combination Having a substrate along a first edge; supporting the wafers at their edges within a support frame to maintain a space between adjacent wafers;
使該等數個晶圓與該基材分離同時其等係被支撐於該 支撐架之内。 A 該等晶圓係以一陣列被支承於該支撐架内、鄰接的晶 圓之主要表面互相面對。至少於較佳具體例中本發明使 數個晶圓能夠被-支擇架切，藉此於鄰接的晶圓之間維 持-空間。因而，該等晶圓係以—間隔的陣列而被支樓於 該支樓架内。有繼’此協助了個別的晶圓會從該陣^抽 出。至少於較佳具體例中，本發明可以使能夠用比現存的 方法所被施加至該等晶圓更低的負載來抽取該等晶圓。 -空間較佳地被維持於鄰接的晶圓之間至少於該等曰曰 圓的邊緣處。於某些例子中，該等晶圓可以偏轉越過其= 之長度、導致鄰接的晶圓之表面彼此接觸。然而，即使該 等表面彼此接觸’料__空間於鱗邊緣處，該等了 圓可以更容易地被分隔開。較佳地，然而，該支撐架維;; 鄰接的晶B1互相分離開’藉此其等不會彼此接觸。 至少於較佳具體例中，依據本發明之方法促進從該等 數個晶圓選擇及/或移除個別的晶圓。當降低或避免了鄰接 的晶圓之_接觸，可Μ低或是避免習知技藝方法遭遇 5 201125032 到的聚集效應。此外，個別的晶 該晶圓或是任何其他的晶圓的也除較不可能會導致 晶圓分隔開時。 、當各晶圓係與鄰接的 於本發明之較佳具體例中，1等曰。 即，該等晶圓為石夕晶圓）。該 ^晶圓係由石夕所形成（亦 而言，太陽電池。本發明亦可以可以使用來形成舉例 例如使用於半導體工業之晶圓。k用至其他類型的晶圓， 該等晶圓較佳地係被切於 夾持力以使該等晶圓的邊緣相對 ^内'藉由施加一 由至少-對相對的夾持構件所施加’該夾持力係藉 可變形 夫持於該支撐總成内，夫持構件=地=晶圓係被 的材料所形成。 係由 该等晶圓典型地係從結合至一 Sl, ^ 一基材的一塊狀物所切 則’ U及在已經完成該切削製程 , . 缸之後該等晶圓沿著一邊緣 仍保持為結合至該基材。使用—粗2 4! 錄子來切削該等晶圓，以 及此形成介於鄰接的晶圓之間的★ 二間。支撐該等晶圓於其 等之邊緣於-支撐架内的步驟係被執行，同時該等晶圓係 破結合至該基材以使該等晶圓之間的間隔能夠維持至少 該等晶圓係以-陣列被支撐於該 支撐架内。 使流體，一液體或一氣體，通過該以圓之間可以協 助避免鄰接的晶圓聚集在-起及/或協助使已經成一堆在 —起的晶圓分隔開。較佳地，該方法包含建立—流體流動 在該等晶圓之上及/或於該等晶圓之間的步驟。較佳地，該 201125032 等晶圓係被定位，藉此其等之主要表面係被配置實質平行 於該流體流動的方向。該夾持力較佳地係在該等晶圓被放 在該流體流動内的位置時予以施加。當其等於該流體流動 的作用下為彼此分隔開時，該等晶圓可以藉此被夾持於該 支撐架内。設若希望的話，在該等晶圓被支撐於該支撐架 之内後，可以停止流體的流動。流體的流動可以藉由從一 喷口供應流體來提供。 該等晶圓典型地係藉由一黏合劑來結合至該基材。從 該基材移除該等晶圓的步驟較佳地包含脫膠該等晶圓，舉 例而言藉由使該等晶圓與該基材浸沒於一脫膠溶液内。 較佳地，該方法進一步包含該清潔該等晶圓的步驟。 清潔該等晶圓為有益的，以致於其等可以使用於對其等之 狀況敏感的製程中。較佳地，該清潔該等晶圓的步驟發生 在該支撐該等晶圓於該支撐架内的步驟之後。就其本身而 論，該等晶圓可以在該清潔該等晶圓的步驟的期間被支承 在適當的位置，藉此協助該清潔製程。該清潔該等晶圓的 步驟可以在該等晶圓已經與該基材分離之前及/或之後來 執行。 較佳地，該等晶圓係被支撐，藉此該等晶圓於第一個 方向（其中其等係彼此分隔開）上之移動係被抑制或是實質 上避免。此外，該支撐該等晶圓的步驟使該等晶圓能夠於 該等晶圓的平面上之第二個方向上被抽出。此配置允許該 等晶圓會分別地從該支撐架位移於該第二個方向上對抗相 對地少的阻力。較佳地，該等晶圓可以從該支撐架位移於 7 201125032 該第二個方向上’甚至當施加·持力時。然而，該等曰 圓的分離可以藉由對該等晶圓於第一個方向上的移動之 對向的抑制而總是被維持。 X夾持力可以係藉由一機械的致動器（例如一氣壓紅) 所她加’替代對該等晶圓之至少—個炎持構件。設若該致 動器施加-怪㈣失持力’所施加的力量將會—致地分佈 遍及該支撐架⑽晶圓的各個。於是，被施加至各晶=的 夾持力將會端視該支撐架内的晶圓之數目而變化。因而， 設若從該支樓架移開晶圓，被施加至剩餘的晶圓之各個的 夾持力會增加。可以提供—控㈣來對於該讀架内的晶 圓之數目反應來調整藉由—機械的致動器所施加的失持 力。 於車父佳具體例中’至少一個充氣式失持構件被提供。 -夾持力較佳地係II由使該（等）充氣式夾持構件膨張來施 加°此提供了-有效的方法用於確保該等晶圓被適當地牢 固的，至少於較佳具體例中，其係相對容易控制的。使用 -充氣式夹持構件可以協助確保—恆定的夾持力被施加至 ㈣之各晶圓，不f其内之晶圓的總數 目。此為特別令人滿意的以避免損害該等晶圓，當其等被 夾持時。 依據本發明之方法可以包括將該等晶 圓配置成一垂直 陣列（亦即，該陣列的縱Μ為實質上垂直的）之進-步的步 驟，同時其等係被切於該支撑架之内 。換言之，該等晶 圓係被倾於該支㈣内成—者於另—者之上的—堆。該 201125032 方法可以包括使該陣列在其之橫軸的周圍旋轉的步驟以使 δ亥等晶圓配置成一者於另一者之上的一垂直陣列。該支撐 架較佳維持鄰接的晶圓之間的空間，甚至當該陣列處於垂 直的方位時。 該方法可以包括從該陣列抽出一末端晶圓的步驟。當 該陣列被垂直配置時，該最上部的晶圓典型地從該陣列被 抽出。較佳地’該等晶圓的垂直陣列至少部分地浸沒於一 液體之内。該最上部的晶圓之上部表面的至少一部分較佳 地被舉起於該液體的位準之上，同時於該陣列中之剩餘的 晶圓為部分地或徹底地被浸沒的。最佳地，該最上部的晶 圓的前緣（亦即，當該晶圓從該陣列抽出時，該晶圓面向該 晶圓的移動之方向上之邊緣）突出於該液體的位準之上，當 該晶圓係準備好抽取時。處於該等晶圓以相關於水平線的 一角度傾斜之配置的狀況，該最上部的晶圓的後緣（亦即， 面向當該晶圓被抽出時移動方向的相反的方向之邊緣）可 以被浸沒於該液體的位準之下，當該晶圓係準備好抽取時。 較佳地’僅有該陣列中之最上部的晶圓係被舉起於該 浴槽内的液體的彎月面之上。實際上，然而，舉起頂部的2 個、3個或是4個晶圓於該液體的位準之上會為必須的。晶 圓的陣列較佳地被舉起各個時間一晶圓被移除以維持該最 上部的晶圓在相關於該液體的表面之實質上相同的位置。 較佳地流體，一氣體或一液體，的流動係被建立在待 從該陣列抽出之一晶圓的主要表面之至少一部分之上。該 流體玎以由一喷嘴所供應或是藉由建立一流動於放置該陣 201125032 列的一容器或槽内所供應。設若該流體係由一喷嘴所供 應，其可以是被引導實質上垂直於該晶圓的主要表面，或 是以對該晶圓的主要表面之一銳角被引導。該流體較佳地 被引導至該晶圓（舉例而言最上部的晶圓之頂表面）之經暴 露的表面之上，當該陣列被垂直配置時。該流體流動可以 協助從該陣列移開碎片，例如破裂的晶圓之破片。該流體 流動較佳地以相反於該晶圓移動方向的方向而移動於該晶 圓之上，當其從該陣列抽出時（亦即，從該晶圓的前緣朝該 晶圓的後緣）。 可以提供一用於降低該等晶圓上的負載之展佈器板。 該方法可以包括移開晶圓的陣列朝該展佈器板的步驟，當 各晶圓被抽出時。較佳地，介於該展佈器板和最上部的晶 圓之間的距離被維持為實質上不變的。 儘管該等晶圓可以成批的以2個或更多個晶圓從該支 撐架抽出，該方法較佳包括從該支撐架1次1個抽出該等晶 圓的步驟。該等晶圓可以藉由將待被抽出的晶圓與一抽吸 或真空襯塾接合而抽出。較佳地，然而，待被抽出的晶圓 係藉由一摩擦襯墊予以接合。該摩擦襯墊較佳地接觸待被 抽出之晶圓的主要表面。§亥摩擦概塑*.和該晶圓接而可以·~~ 起被移開來從該支撐架抽出該晶圓。至少於較佳具體例 中，可以使用一摩擦襯墊而施加足夠的力量來從該支撐架 移除該晶圓而不用施加一抽吸或是真空力來接合該晶圓。 晶圓的陣列可以被定位，藉此使各晶圓維持於實質水 平的位置。較佳地，然而，該陣列係被配置，藉此各晶圓 10 201125032 係以對水平線的一銳角來傾斜。該等晶圓較佳地以對水平 線介於0°和45°之間的角度傾斜；或介於5°和30°之間的角度 傾斜。最佳地，該等晶圓係以對水平線大概15°的角度各自 地傾斜。 依據本發明的第二個態樣，提供了一支撐架供用於第 一個態樣的方法。本支撐架包含一夾器以及可以使用來維 持數個晶圓之間的一空間，當其等從其等膠著地附著的一 基材予以移除時。該夾器可以使用來提供可以分別地存取 之一架子的被分隔開的晶圓。 依據本發明的第三個態樣，提供了一支撐架，其用於 支撐數個晶圓且維持鄰接的晶圓之間的空間，該支撐架包 含： 一夾持總成，其具有用於接合數個晶圓之相反邊緣之 至少第一及第二夾器，以支撐該等晶圓且維持鄰接的晶圓 之間的空間； 其中該第一及第二夾器係被配置成實質上避免該等晶 圓於第一個方向上之移動，其中該等晶圓係於第一個方向 上彼此分隔開。該第一及第二夾器較佳地被裝配成使該等 晶圓能夠從該支撐架抽出於該等分別的晶圓的平面上之第 二個方向上。 可以提供一機械的致動器來致動該第一夾器及/或該 第二夾器。較佳地，然而，該第一夾器及/或該第二夾器為 充氣式的。該（等）夾器可以，舉例而言，包含一充氣式囊袋。 可以提供一流量控制裝置來隔離一第一充氣式夾器與 201125032 一第二充氣式夾器。該第一及第二充氣式夾器可以予以互 相隔離，當於該等夾器的一者發生穿刺時。該等夾持構件 可以自動地彼此隔離。可以提供一壓力感測器以使一控制 系統能夠決定何時一夾持構件已經被損害以及應該被取 代。 於一些較佳具體例中，該等夾器可以各自包含一可移 式外部元件。就其本身而論，設若該外部元件變成為受損 害的或髒的，其可以從該夾持構件予以移除來修補、清潔 或是取代。任擇地或此外，該等夾器可以包含一些自行復 原物質，舉例而言一泡沫或液體。自行復原物質可以作用 來修補或密封孔出現的夾器處，例如穿刺。此特別有用於 充氣式夾器的情况下。 較佳提供了一展佈器板(spreader plate)來控制被施加 至該陣列中的一晶圓之負載。當一晶圓被抽出時，例如由 於夾持構件的擴展，被施加於一鄰接的晶圓上之負載可以 增加。該展佈器板可以控制任何此擴展以及藉此維持實質 上一致的負載於該等晶圓上，當其等係由該支撐架予以處 理時。該展佈器板較佳為可動式的相關於該第一及第二夾 器，藉此，在使用，介於該展佈器板和該陣列中之最上部 的晶圓之間的距離係被維持為實質上不變的。 該等夾器較佳為可變形的以便於圍繞該等晶圓的邊緣 變形。此變形有效地造成溝槽以形成於該等可撓式夾器 内，當一夾持力係被施加至一晶圓時。該溝槽允許各晶圓 移動於其自身之平面（亦即，該第二個方向）。較佳地，該等 12 201125032 夾器係由一彈性材料所形成，例如橡膠或其他的彈性體材 料。於其他的具體例中，該等夾器可以為剛性的。 該第一夾器及/或該第二夾器各自可以包含一或更多 個脊。此等脊可以協助維持該等晶圓的分離，同時允許該 等晶圓的移動於其等各自的平面。較佳地，該等脊延伸於 該等晶圓被分隔開的方向上（該第一個方向）。 該支撐架的較佳地包含用於接合待從該支撐架抽出之 一晶圓的構件。該接合構件可以包含一抽吸或真空概墊。 較佳地，然而，該接合構件包含一摩擦襯墊用於接合待從 該支撐架抽出之晶圓的主要表面。在使用，該摩擦襯墊為 隨該晶圓可動的以從該支撐架移開該晶圓，舉例而言，至 一輸送裝置（例如一環狀輸送器）之上。 該支撐架較佳被提供至少一個喷嘴用於引導一流體， 一氣體或一液體，至該等晶圓之上，當其等被支撐於該支 撐架内時。該至少一個喷嘴較佳被配置成引導流體的流動 至待從該陣列抽出的一晶圓的主要表面之上。該喷嘴較佳 被配置成引導該流體實質上垂直於該晶圓的主要表面，或 是以對該晶圓的主要表面之銳角。該至少一個喷嘴可以被 架設於舉例而言，該展佈器板之上。 圖式簡單說明 本發明之較佳具體例現在將經由實例、僅僅關於附圖 予以說明，其中： 第1A圖顯示出耦合至一基材之矽晶圓的陣列之側視 圖， 13 -5.. 201125032 第1B圖顯示出第1A圖之石夕晶圓的陣列的端視圖； 第2 A圖顯示出一依據本發明的較佳具體例之夾持總成 被固定至石夕晶圓的陣列之側視圖； 第2B圖顯示出依據本發明之夾持總成的端視圖； 第3A圖顯示出依據本發明之夾持總成於脫離位置的端 視圖； 第3B圖顯示出依據本發明之夾持總成於接合位置之端 視圖； 第4圖顯示出數個矽晶圓，其等已經彼此黏附； 第5A圖顯示出從被支撐於依據本發明之夾持總成内之 矽晶圓的陣列移除該基材，； 第5B圖顯示出第5A圖的特徵之端視圖； 第6A圖顯示出從被支撐於依據本發明之夾持總成内之 該矽陣列移除一個別的矽晶圓； 第6B圖顯示出從被支撐於依據本發明之夾持總成内之 一個別的矽晶圓之移除的平面圖； 第7A圖與第7B圖示意地顯示出本發明的第二個具體 例； 第8圖顯示出被支撐於依據本發明的第二個具體例之 該抽取槽内的晶圓的陣列之放大圖； 第9A圖與第9B圖示意地顯示出本發明的第二個具體 例之修改版； 第10A圖與第10B圖示意地顯示出本發明的第三個具 體例； 14 201125032 苐11A圖與第hb圖示意地顯示出本發明的第三個具 體例之修改版； 苐12圖示思地顯示出依據本發明之一摩擦襯墊；以及 第13圖示意地顯示出用於該夾持總成之氣壓系統。 I 万包方式】 較佳貫施例之詳細說明 依據本發明之一方法與儀器的較佳具體例現在將予以 兒月。第1Α圖係圖解，舉例而言待被使用於製造太陽電池 之石夕晶圓1的陣列。料晶圓1係被結合至-基材總成3以促 進在本文中更詳盡說明的生產方法的期間之處理。 該等晶圓1實質上為平面形式的矩形以及最佳為實質 上正方形的。该等晶圓的角落可以是弧形的或倒角的。該 等晶圓1為實質平面的以及各具有介於1〇〇至3〇〇腿之間的 厚度。於鄰接的晶圓丨被結合至該基材總成3的位置處之鄰 接的晶圓1之間的距離為大概刚至2〇〇um於縱秘方向上（亦 即，垂直於晶圓的表面卜典型地，介於500個和2000個之 間的晶圓被形成在一起於該陣列中以及隨後的處理步驟係 於整個的陣列上予以執行。 該基材總成3包含被架設於一金屬架3b之上的一玻璃 板3a。一ί夕塊係使用一適合的黏合劑4予以結合至該玻璃板 3a。s亥矽塊接而使用慣用的多道切割的技術予以切削以形 成紐成s亥陣列之個別的晶圓丨。鋸子徹底地切削穿過該矽塊 以及典型地切削到該玻璃板3 a以確保所形成的矽晶圓t不 連結在一起。在已經完成該切削製程之後，該等晶圓1藉由 15 201125032 該黏合劑沿著其等之頂邊緣而各自保持結合至該玻璃板 3a在s亥陣列的各個末端’可以選擇性地提供未切割的石夕 之一P早壁層2(或末端頰板(end cheek))來保護該陣列，如第 1B圖中所顯示的。 第2A圖與第2B圖圖解了依據本發明的較佳具體例之 一夹持總成用於支撐矽晶圓的陣列。該夾持總成係由帶有 兩對相對的夾持構件5之一框架（未顯示）所形成。該等失持 構件5的2者係被配置於該等矽晶圓1的1側之上，同時該等 剩餘的2者係被配置於相反側之上。藉著使該等夹持構件5 的—内部表面與該等矽晶圓丨之相反邊緣接觸，該等矽晶圓 1可以以此一方式被夾持以使得支撐其等，同時維持該等矽 晶圓1沿著該陣列的縱軸x彼此分隔開。因而，當該等晶圓工 係破支樓於該失持總成内時，晶圓i之經間隔的陣列係 持。 、 製體例中，料夾持構件5為由彈性體的材料之擠 即又斤形成的延長的構件。已經發現到聚石夕氧橡膠 =分適合用於形成該等失持構件5。該等夹持構件5各 有—接合表面6詩接觸該等晶圓丨的邊緣；以及 ::等提::了一加壓的空氣供應以供應加壓 籍： … 弟3A圖中所顯示的，當該辇十4* 構件5不是膨脹時，的該等 夾持 緣八^ ^ 專接合表面6係與該等矽晶圓i的邊 ㈣。當該等夾持構件5是膨 的邊 向内地位移以接觸該等晶圓⑽邊绫…礼表面6係 的邊緣以及藉此支撐該陣列 16 201125032 的各曰曰圓，如第3b圖中所顯示的。該夾持總成内之全部 等爽持構件5為充氣式的是非必要的，可以提供舉例而 言充氣式和彈性構件的組合。 口°亥等失持構件5擴展且與該等矽晶圓1接觸，該接合 表面隻形而圍繞該等矽晶圓丨的邊緣。所形成的變形限制了 a圓於垂直於該晶圓的平面之第一個方向上之移動。 名士 ，— '° ’ ―旦該夾持總成被致動，該等矽晶圓1於其等被分隔 的方向上之移動被抑制（亦即，延伸垂直於第3B圖内之書 頁的一平面）。然而，於該等分別的晶圓1的平面之第二個 方向上的移動（亦即，於第祀圖的頁之平面）為較少被抑制 的。該等晶m可以藉由使其等於該第二個方向上移動而藉 此㈣等夾持構件5被抽出，甚至當該夾持總成被致動時。 系y之預形成的縱脊係，選擇性地提供於該等爽持構 内部表面上，如第3_圖中所顯示的。該 觸/、Λ降低該等夹持構件5與該等晶m的邊緣之接 觸區。此外，該等脊可能為更容易變形的以 被施加至該等晶圓】之負載力量可二 1上口门而：亥等脊可以協助移除個別的晶in於該第二個方 移動於該第—個方向上。彳適田地被夾持來限制或避免 抑保該等夾持構件5的完整性，充氣管可以由一外 17 201125032 可能的。於本具體例巾，該等夾持構件5係由具有-中空的 内部之聚#氧擠製物所形成，加壓空氣係被引人至該中空 的内部内以使該等夹持構件5膨脹，以及施加-炎壓。 會了解到於該等失持構件5的一者之穿刺，舉例而言由 於一石夕晶圓1切削其，可以導致施加來支撐該等晶圓1的夾 持力之降低。為了降低此事發生的可能性，一自行復原流 體可以選擇性被提供於該等夾持構件5内以便自動地修補 那樣形成的任何穿刺。可預期到，至少於較佳具體例中， 一適當的夾持力可以仍舊被施加以夾持該等晶圓丨於適當 的位置，即使該等夾持構件5的一或更多者已經被穿刺。 可以提供一或更多個流量控制裝置來使各個夾持構件 5與其他的夾持構件5隔離。可以任擇提供一或更多個流量 控制裝置來使不同組的該#夾持構件5彼此隔離。此等的配 置為有利的’因其等可以避免該等夾持構件5的全部放氣， 設若一者被穿刺。該流量控制裝置可以，舉例而言，包含 一自封式氣壓連接器、一流量限制器或是—止回閥。 於本具體例中’該夹持總成和該等失持構件5係以可以 被運送的-卡E的形式。此卡E可以使料運载生產製程 的步驟之間的矽晶圓1的陣列。於其他的實施，該夾持總成 可以隨著所發生之全部的步驟而被保持於固定的位置了同 時該等石夕晶圓1被夾持發生在那個位置。 如上所提及的，晶圓1⑽列錢用多道線切割的技 術由一矽塊所形成。典型地在此等製程的期間使用一切削 液以及一旦已經完成切削繼續存在_液體的淤漿。就其本 18 201125032 身而論，各個矽晶圓1係由液體所環繞。介於鄰接的晶圓1 的表面之間所形成的表面張力及/或毛細管作用可以使其 等聚集在一起，導致聚集效應藉以鄰接的晶圓1彼此接觸， 如同第4圖中所圖解的。可以證明當該等晶圓1以此方式凝 結在一起時’分隔開該等晶圓1為困難的。 為了移除或是降低聚集效應，液體的流動係被引入該 等矽晶圓1之間。此液體的流動係足夠以確保各晶圓1不會 接觸任何鄰接的晶圓丨。該等晶圓丨典型地被放置於該液體 流内歷時1和60秒之間（賴設想収長的時間期間）以確保 該等晶圓1已經彼此分隔開（換言之，其等已未聚集）。儘管 此液體的流動持續，該等晶圓！接而由該夾持總成予以牢 固，如同第2 A、2 B、3 A和3 B圖中所圖解的。該夹持總成係 作用以支撐該等晶圓i於該陣列中同時維持鄰接的晶圓1之 間的空間’至少於其等之邊緣處。該液體的流動可以選擇 性地被停止，—旦該等晶圓丨已經被鱗至該續總成之 内’其等相關於彼此的位置(至少於其等之邊緣處)接而藉由 該夾持總成而實質固定。 應該進行—清潔步驟來移除圍繞該等石夕晶圓！之切削 液和任何其他的污染物。此清潔步驟可以在該等發晶圓1被 夾持之前予以進行。然而，在該㈣晶圓i已經被爽持於該 失持總成内以後來進行清潔步驟為較佳的。此係因為如 將"亥等石夕晶圓1炎持於該夹持總成内確保了其等之間的分 離，允許清潔流體進出各個矽晶圓的整個表面。 該等石夕晶圓1隨後係與該基材總成3分隔開。於較佳具 S. 19 201125032 體例中，此步驟係藉由從該基材總成3脫膠該等矽晶圓1來 進行。脫膠的製程涉及將該等矽晶圓丨浸浴於一脫膠液體 内，例如熱稀釋有機酸(較佳地乳酸於的溫度以 及具有、於10%的)辰度）或是其他適合的製劑。晶圓1的陣列 係被引入至一脫膠浴槽之内同時其被支撐於該夾持總成 内。將該等矽晶圓1耦合至該基材總成3的膠係釋放於該脫 勝/谷槽内，使β亥基材總成3能夠從該等碎晶圓1實際移除， 如第5Α和5Β圖中所顯示的。該夾持總成支承該等矽晶圓丄 於該陣列中而維持一空間於鄰接的晶圓i之間，一旦該等矽 晶圓1已經從該基材總成3釋放。 該等晶圓1可以逐個地從該夾持總成移除。從該陣列移 除個別的晶圓之步驟於本文中稱作為抽取。該等晶圓i被轉 移至一抽取浴槽用於逐個地從該夾持總成抽取。該抽取浴 槽典型地包含一稀釋溶液，例如水和洗潔劑，以協助執行 晶圓之額外的清潔。該等晶圓丨可以選擇性地從該脫膠浴槽 被轉移至含有一清潔液體之中間的清潔浴槽。 如第6A圖中所顯示的，為了從該夾持總成抽取該等晶 圓1’該陣列係旋轉通過90。於一橫軸Y之周圍’藉此該陣列 的縱軸X係被垂直配置而該等晶圓〖被放置成一者於另一者 之上。會了解到該夾持總成於該陣列中之鄰接的晶圓1之間 、准持一空間，甚至當其被配置成此垂直的方位時。 晶圓1的陣列之旋轉可以在轉移該陣列至該抽取浴槽 的步驟之前/的期間/之後予以執行。設若該陣列以垂直的方 位運送該等晶圓1(亦即，該陣列的縱軸乂被水平配置），於 20 201125032 該等晶圓1之間的液體傾向流掉以及此可以導致晶圓聚集 在一起。有鑑於此，該陣列較佳地以該等晶圓1的主要表面 被支承以實質水平的定位來運送（亦即，該陣列的縱轴X被 實質垂直地配置）以降低從該等晶圓1之間的液體之排液。 一液體可以選擇性地供應於該陣列中的該等晶圓1之上，其 等被運送以降低可能從該等晶圓1之間排出的至少一些液 體以及藉此協助避免該等晶圓1的聚集。 使晶圓1的陣列沈入於，舉例而言該抽取浴槽中所含有 的，液體内會允許可能在運送步驟的期間已經聚集在一起 之任何的晶圓1彼此分隔開。當該等晶圓1被支撐於該夾持 總成内時，其不必須要建立一流體流動於其等之間以分隔 開其等。 該夾持總成係被放置於該抽取浴槽中而該陣列的縱軸 Y係被實質垂直地配置。如可以於第6A圖中看見的，該等 晶圓1的多數係浸沒於清潔液體之内，同時最上部的晶圓1 之至少頂表面係呈現在該液體的該表面8之上。較佳地，該 頂部的晶圓1被移開於該液體的彎月面之上，同時於該陣列 中之其他的晶圓1保持浸沒於該抽取浴槽中的液體之内。此 配置是令人滿意的，因其促進從該陣列移除最上部的晶圓 1，同時該等晶圓的剩餘物保持被支撐於該夾持總成之内。 如顯示於第6A圖的放大圖中，該最上部的晶圓Γ可以 藉由滑動其於其自身之平面於該第二個方向上而側向地從 該陣列抽出，經由第6A圖中的箭頭A所圖解。會了解到該 頂部的晶圓Γ可以以此方式從該夾持總成抽出，當該等夾 21 & 201125032 持構件膨脹時。該最上部的晶圓丨’係於第6八圖中被圖解為 部分地從該陣列予以移除。 第6B圖顯示出石夕晶圓1的陣列之一平面圖以及圖解了 第二個方向，其中一矽晶圓1可以從該陣列予以移除。可以 提供一制動構件或導引構件以避免該晶圓以相反的方向被 抽出。 提供了一摩擦襯墊9來予以接合該最上部的晶圓丨，之 頂表面以及使其從該等夾持構件5之間滑出。該摩擦襯塾9 為平滑的且可撓的以調節該夾持總成内之該最上部的晶圓 Γ的垂直位置之偏差。該摩擦襯墊9可以由皮革、聚胺曱酸 酯彈性體（例如Sylomer®)或是對該最上部的晶圓i，之表面 具有適當的摩擦力之其他的材料所形成。取代該摩擦襯墊9 或是除了該摩擦襯墊9’尚有一抽吸或真空襯塾可以使用來 接合s玄最上部的晶圓Γ。該摩擦概塾9的一中央部分可以， 舉例而言，形成一真空襯墊》然而’應該施加一相對低的 力量來降低損害該最上部的晶圓1’之風險。該抽吸襯墊可 以由有小孔的材料(例如Sylomer®)所形成。一用於接合該 最上部的晶圓Γ之晶圓處理裝置17係在下面有關於第丨2圖 予以說明。 該最上部的晶圓Γ典型地係從該夾持總成位移至—環 狀輸送器或是其他的運送構件之上用於進一步的處理。 為了協助降低被施加至該等晶圓1的負載，一展佈器板 10被提供於該夾持總成的頂部。使該展佈器板1〇相關於該 等夾持構件5移動，藉此當晶圓1係從該夾持總成抽出時， 22 201125032 其之位置關於該陣列中的該最上部的晶圓i，保持為實質上 :變的。該展佈器板10典型地從該最上部的晶圓i，被位移 :於1和1〇 _之間，以及較佳地從該晶訂位移大概 二。该展佈器板職助降低該等夾持構件5(由於膨服)於 ^手就在該等剩餘的晶^之上的區域之擴展。沒有該展佈 錢10’當移除-晶m時該等祕構件5會，導致施 用增加的負載於該陣列中的下一個晶圓!之上㈣地該晶 圓Γ位於該陣列的頂部）。 該展佈器板K)較佳-般為w的且包含彼此分隔開的2 個臂（未顯示）。-致動器（未顯示），例如—氣壓缸，被提供 來使該等臂相關於彼此移動。該致動器可以使該等臂朝彼 此位移崎健展佈雜·有效寬度叹允許其被放置 於晶圓1的陣列之上的該等夾持構件5之間一旦在適當的 位置，該致動器以橫向延伸該等臂向外以致於該展佈器板 1〇接合該等夾持構件5。該展佈器板1〇具有如該等晶圓k 實質相同的寬度，當該等臂係在其等之延伸位置時。該展 佈器板H)的臂在該等晶^從該夾持總成抽出的製程持續 保持為延伸的。 當各晶圓1，被抽出時，該夾持總成向上位移來舉起晶 圓1的陣列逐漸地離開該抽取浴槽中的液體’ 的下個晶m’，之至少頂表面被位移離_液體。隨著該夹 持總成向上位移，該展佈器板10沿著該等夾持構件5滑動， 藉此其之位置相關於該最上部的晶圓丨，保持為實質固定 的。-低摩擦的塗層，例如Tefl_，可以選擇性地被提供 S. 23 201125032 於展佈器板ίο的臂之上接觸該等夾持構件5之該等區域内 以促進該展佈器板10的滑動。較佳地，然而，至少該展佈 器板10的臂係由低的摩擦的材料組成，例如Teflon®或玻 璃。 提供了至少一個喷嘴（未顯示）來引導一流體流動至該 陣列中的該最上部的晶圓Γ之上表面之上。於本具體例中 提供了數個喷嘴以引導液體至該最上部的晶圓1 ’之上以創 造一流體流.動在其之上部的主要表面之上。喷嘴被提供於 該展佈器板10的臂之上以及被配置成要引導液體實質垂直 於該最上部的晶圓1，之頂表面。所形成的液體的流動可以 協助清潔該等晶圓1 ’舉例而言藉由移開已經與該基材總成 3分離且變成被困在該等晶圓1之間的任何的膠帶。此外， 該液體的流動可以移開任何破裂的晶圓丨之破片，其等可以 要不然藉由該摩擦襯墊9來運送。 取代或是除了引導來自一或更多個喷嘴的液體至該最 上部的晶圓Γ之上，液體的流動還可以被建立於該抽取浴 槽中以協助該等晶圓1的清潔以及破裂的晶圓i之任何破片 的移除。遠流動較佳地建立在相反於從該陣列移除該等晶 圓1的方向上之方向。該流動可以藉由提供一污水坑來建 立’來自該抽取浴槽的液體和任何的碎片-起流動至其 内於此配Ϊ於„亥抽取浴槽中的液體為持續裝滿的，不 不是藉由引人新鮮液體的供應就是藉由再循環來自冷水坑 之液體。抽吸可以用來改良該抽取浴槽中之液體的流動及/ 或調節被施加的力量。 24 201125032 儘管該陣列的縱軸x被實質垂直地配置，該夾持總成允 許該等晶圓1被側向地移除但是的抑制該等晶圓1的垂直移 動。就其本身而論，各個個別的晶圓1可以依次自動地從該 夾持總成予以選擇，但是總是於該等晶圓1之間維持一空 間。即使該等晶圓1各個被支撐於相反邊緣，其等可以充分 地屈曲和彎曲因此鄰接的晶圓1的表面彼此接觸。然而，本 發明之藉以至少該等晶圓1的邊緣彼此分隔開的配置允許 該等晶圓1可以更容易地從該陣列抽出。設若必須，一液體 可以被引入於該等晶圓1之間以促進鄰接的晶圓1之接觸面 的分離。該液體可以以液體的流動而被引入於該等晶圓1之 間或是僅僅藉由維持該等晶圓1為至少部分被浸沒的。 第二個具體例現在將有關於第7 A圖與第7B圖予以說 明。本具體例使用如同本文中說明的第一個具體例之相同 的儀器以及類似的參考數字已經使用於類似的組件。 該等晶圓1係被引入至一脫膠浴槽11之内，同時其等係 被結合至該玻璃基材3a。該脫膠浴槽11含有一脫膠溶液， 例如熱的有機酸，以及該脫膠溶液的流動被建立於該脫膠 浴槽11内。如同由第7A圖中的箭頭B所圖解的，該脫膠溶 液以相關於該等晶圓1的橫向來流動以促進該等晶圓1之間 的液體的流動以及藉此來協助避免該等晶圓1聚集在一 起。該夾持總成接而被放置在晶圓1的陣列四周，以及一夹 持力被施加來支撐該夾持總成内的該等晶圓1。因而，該等 晶圓1係被支撐於該夾持總成内在該脫膠浴槽11中而該陣 列的縱轴X水平地延伸。 25 201125032 將該等晶圓1結合至該基材3a的黏合劑係於該脫膠浴 心11内予以釋放’以及該基材總成3係被移除 '使該等晶圓 1處於被支樓於以，陣列内在該夾持總成之内。該夹持總成 係由H參考第7塌巾的參考數字12之-自動處理儀 器予以支撐。 炎持Ά成係旋轉在該陣列的縱軸X (由箭頭C所圖解 的）的周圍通過90卩及在轉㈣橫軸γ(由箭頭D所圖解 的）的周圍通過9G，藉此該等晶ι係被配置成直接在彼此 之上方於該陣列中。該等晶圓艰而可以選擇性地被運送至 一抽取㈣13 ’同日紐支撐於該夾縣仙㈣陣列的縱 軸X圍實質水平的。會了解到該陣列在該縱似和該橫轴υ 的周圍之旋轉可以同時地執行或是以任-順序作為2個不 5 ’、』再者’錢持總成的旋轉可以於該脫膠浴槽I】 内或是在該脫膠浴槽11的外部執行。 成H1係被^至該抽取浴槽之内以及該炎持總 2被疋位藉此該陣列的縱似係以對該垂直線的-角度 自本具體例中，該陣_縱轴 W綠a, 該等晶圓1的各個係以對 ^ΙΤΓ _由龄Γ例之相同的方式從該夾持總成抽出。 等晶圓1傾斜，破裂的晶圓之碎片及/或破片 係更容易地運送_該最" 體至該最上部的晶圓i，之上表面之表面。供應液 特別有效的，當該陣列幻W 在移開任何的碎片為 陣列為傾斜的時，藉此該晶m，的表面 26 201125032 係以對水平線的一銳角傾斜。 如同於第一個具體例中，該夾持總成係被向上舉起， 當各晶圓1從該陣列抽出。一展佈器板(未顯示）再次被提供 以降低各晶圓1之上的負載在抽取之前。 該等晶圓1係藉由一摩擦襯墊9予以抽出，該摩擦襯塾9 被架設於一般而言參考第7B圖中的參考數字14之一自動化 的輸送器之上。該等晶圓1係藉由該摩擦襯墊9予以遞送至 一帶式輸送器15之上用於運送該等晶圓1。該等晶圓1可以 在最終的檢查之前，舉例而言，經受進一步的清洗週期及/ 或一乾燥週期。該等晶圓1接而可以被分類以及封裝。 本發明的第二個具體例之修改版係圖解於第9A圖與第 9B圖中。類似的參考數字已經使用於此修改版中之類似的 組件。此配置中的主要差異係在於該等晶圓1係被引入至— 夹持浴槽17之内，同時其等係結合至該玻璃基材3a。該夾 持總成係被故置圍繞該等晶圓1於該夾持浴槽Π内且一失 持力係被施加，同時流體流動於該等晶圓1之間（如同由箭 頭B所圖解的）以協助避免其等聚集在一起。該等晶圓1係被 支樓於該夾持總成内以及接而被轉移至該脫膠浴槽11。本 製程的剩餘部分與以上所說明的第二個具體例之剩餘部分 沒有不同。本發明的第三個具體例係圖解於第10A圖與第 10B圖中。本具體例使用如同本文中說明之第一個與第二個 具體例之相同的儀器以及類似的參考數字已經再次地使用 於類似的組件。 介於本具體例和第二個具體例之間的主要差異是該夾 27 201125032 持總成被再定位以把該等晶圓1放置在供用於抽取的位置 之階段。於本具體例中，晶圓1的陣列係從該夾持總成予以 移除而該陣列的縱軸X被實質水平地配置。因而，當其等從 該脫膠浴槽移除時，該等晶圓1係實質垂直地配置。該等晶 圓1在該陣列的縱軸x(由箭頭E所圖解的）的周圍通過90。以 及在該陣列的橫軸Y(由箭頭F所圖解的）的周圍通過90。旋 轉之前，以此定位被運送至該抽取浴槽13。該等晶圓1的再 定位可以在該抽取浴槽13的外部或是於該抽取浴槽13之内 執行。 該等晶圓1再次被放置於該抽取浴槽13中而該陣列的 縱轴X係被配置成對該垂直線大概15°。因而’該等晶圓1 係以對水平線大概15。傾斜。該等晶圓1接而係以如以上所 說明之第二個具體例之相同的方式從該夾持總成抽出。 本發明的第三個具體例之修改版係圖解於第11Α圖與 第11Β圖中。類似的參考數字已經使用於此修改版中之類似 的組件。如同於第二個具體例的修改版中，主要差異係在 於該等晶圓1係被引入至一夾持浴槽17之内，以及在被引入 至該脫膠浴槽11内之前被夾持至該夾持總成之内。液體的 流動被建立於該等晶圓1之間以協助避免其等聚集在一 起。儘管該等晶圓1彼此分隔開，該夾持力係被施加以支樓 其等於該夾持總成内彼此分隔開。該等晶圓1被轉移至該脫 膠浴槽11。本製程的剩餘部分與以上所說明的第三個具體 例之剩餘部分沒有不同。 圖解於第12圖中之該晶圓處理裝置17包含被架設於一 28 201125032 護罩19之上的—襯墊9，該護罩19被固定地架設於一背板21 之上。一系列的腔室23係形成於該護罩19内、與該襯墊9流 體連通。連接至一泵（未顯示）的一真空軟管25係被架設於該 背板21之上用於操作地降低該等腔室23之内的壓力。該襯 墊9為多孔的以及可以供使用作為一摩擦襯墊及/或一抽吸 襯墊來接合該最上部的晶圓1，以使其能夠從該堆晶圓的頂 部被抽出。會了解到該等腔室23内之壓力的相對地小的降 低可以足以接合該晶圓1’。 該襯墊9可以是有小孔的材料，舉例而言由多孔的材料 或是一開放室（open cell)泡沫的材料所形成的。任擇地，或 此外’數個孔可以形成於該襯墊9内用於建立流體連通與該 等腔室23。於後者的配置中，該襯墊9可以由皮革形成。然 而，於較佳的配置中，該襯墊9為PUR為主的彈性體，例如 Sylomer®。 用於致動該等夾持構件5之氣壓系統的結構圖係顯示 於第13圖中。該系統包含4個充氣式夾持構件5，各個具有 一流量控制裝置25，如果發生穿刺來隔離該夾持構件5(舉 例而言’由該等晶圓的切削穿過該充氣式夾器所造成用 於膨脹s亥孝夾持構件5之流體係藉由一空氣供應器29所供 應的一泉27(舉例而言一壓縮器）予以加壓。該等夾持構件$ 係被配置於該氣壓系統的個別支路之上以及各個支路具有 一流量調節器31以及，選擇性地，一壓力感測器33。 提供了一控制系統(未顯示）來控制該氣壓系統。該壓力 感測器33可以由該控制系統所使用來偵測損害的充氣式爽 29 201125032 持構件5以及為了取代而標記其等。 於本配置中的該等流量控制裝置25為自封式氣壓連接 器25，被連接於加壓的供應線至各個夾持構件5。如果發生 穿刺，忒#氣壓連接器密封該供應線至被穿刺的夾持構件5 以及避免或是降低压力流體的漏出。缺少一流量控制襄置 來密封供應線，一穿刺可以導致該等失持構件5的全體為 (部分地或疋元全地)放氣的以及被施加以支撐該等晶圓1的 夾持力為降低的。 會了解到可以使用其他類型的流量控制裝置25。任擇 地，或是此外，可以提供多於一個流體泵27用於供應压力 流體至該等夾持構件5。舉例而言，各個夾持構件5可以與 一專用的流體泵27結合。 设想了各種各樣的變化和修飾用於本文中說明的方法 與儀器。舉例而言，為了確保於該夾持總成内之晶圓丨的正 確的挑選位置，儀器可以包括一感測器系統來提供該陣列 中之該最上部的晶圓1的位置之定位資料。該感測器可以為 機械的或是電子的（雷射/IR/可見光）。該摩擦襯墊9的位置 可以對定位資料反應來控制。 此外’會了解到數個夾持總成可以以迴轉配置予以支 撐使能夠持續的晶圓生產和處理。任擇地，該等夾持總成 可以藉由線性等候系统予以支撐。該等夾持總成可以於該 線性系统内相繼地排序使各種各樣的製程能夠並行地執 行。 本文中提及該等晶圓1的定位係關於其等之主要表 30 201125032 面，除非以另外方式明確說明。特別地，提及該晶圓1係水 平配置的係指出該晶圓1的主要表面為水平的；以及提及該 晶圓1係垂直配置的係指出該晶圓1的主要表面為垂直的。 同樣地，提及該陣列係垂直配置的係指出該陣列的縱軸X 為垂直的；以及提及該陣列係水平配置的係指出該縱轴X 為水平的。 本發明說明的具體例僅僅供使用作為本發明可以如何 執行之實例。具有適當技藝和知識的該等會想到所說明的 具體例之修飾、變異和變化。可以做出此等修飾、變異和 變化而沒有背離申請專利範圍中所定義之本發明的範疇以 及其之均等物。 I：圖式簡單說明3 第1A圖顯示出耦合至一基材之矽晶圓的陣列之側視 圖； 第1B圖顯示出第1A圖之矽晶圓的陣列的端視圖； 第2A圖顯示出一依據本發明的較佳具體例之夾持總成 被固定至矽晶圓的陣列之側視圖； 第2B圖顯示出依據本發明之夾持總成的端視圖； 第3A圖顯示出依據本發明之夾持總成於脫離位置的端 視圖， 第3 B圖顯示出依據本發明之夾持總成於接合位置之端 視圖， 第4圖顯示出數個矽晶圓，其等已經彼此黏附； 第5A圖顯示出從被支撐於依據本發明之夾持總成内之 5. 31 201125032 妙晶圓的陣列移除該基材， 弟5B圖顯不出第5A圖的特徵之端視圖， 第6A圖顯示出從被支撐於依據本發明之夾持總成内之 該矽陣列移除一個別的矽晶圓； 第6B圖顯示出從被支撐於依據本發明之夾持總成内之 一個別的矽晶圓之移除的平面圖； 第7A圖與第7B圖示意地顯示出本發明的第二個具體 例； 第8圖顯示出被支撐於依據本發明的第二個具體例之 該抽取槽内的晶圓的陣列之放大圖； 第9A圖與第9B圖示意地顯示出本發明的第二個具體 例之修改版； 第10A圖與第10B圖示意地顯示出本發明的第三個具 體例； 第11A圖與第11B圖示意地顯示出本發明的第三個具 體例之修改版； 第12圖示意地顯示出依據本發明之一摩擦襯墊；以及 第13圖示意地顯示出用於該夾持總成之氣壓系統。 【主要元件符號說明】 1，Γ，Γ’···晶圓 4…黏合劑 2…障壁層 3…基材總成 3a…玻璃板 3b…金屬架 5···夾持構件 6…接合表面 7···内部腔室 8···表面 32 201125032 9…摩擦襯墊 21…背板 9…概塾 23…腔室 10…展佈器板 25…真空軟管 11…脫膠浴槽 25…流量控制裝置 13…抽取浴槽 25…自封式氣壓連接器 14…自動化的輸送器 27…泵 15…帶式輸送器 27…流體泵 17…夾持浴槽 29…空氣供應器 17…晶圓處理裝置 31…流量調節器 19…護罩 33…壓力感測器 33 <The plurality of wafers are separated from the substrate while they are supported within the support frame. A The wafers are supported in an array in the support frame, and the major surfaces of the adjacent crystal grains face each other. In at least preferred embodiments, the present invention enables a plurality of wafers to be diced, thereby maintaining a space between adjacent wafers. Thus, the wafers are supported in the truss in a spaced array. There is a follow-up that assists in the removal of individual wafers from the array. In at least preferred embodiments, the present invention can enable the wafers to be extracted with a lower load applied to the wafers than existing methods. The space is preferably maintained between adjacent wafers at least at the edges of the domes. In some examples, the wafers can be deflected past their length to cause the surfaces of adjacent wafers to contact each other. However, even if the surfaces are in contact with each other, the circle can be more easily separated. Preferably, however, the support frame is contiguous; the adjacent crystals B1 are separated from each other by the fact that they do not contact each other. In at least preferred embodiments, the method of the present invention facilitates selecting and/or removing individual wafers from the plurality of wafers. When the contact of adjacent wafers is reduced or avoided, the effect of the conventional method encountering 5 201125032 can be reduced or avoided. In addition, individual wafers or any other wafers are less likely to cause wafer separation. In the preferred embodiment of the present invention, each wafer system is adjacent to the first embodiment. That is, the wafers are Shi Xi Wa Wa). The wafer is formed by Shi Xi (also known as a solar cell. The present invention can also be used to form, for example, a wafer used in the semiconductor industry. k is used for other types of wafers, and the wafers are used. Preferably, the clamping force is applied to the edge of the wafer so that the clamping force is applied to the support by applying at least a pair of opposing clamping members. In the assembly, the member is formed by the material of the wafer. The wafer is typically cut from a piece of material bonded to a Sl, ^ substrate. The cutting process has been completed, . The wafers remain bonded to the substrate along an edge after the cylinder. The wafers are cut using a thick 2 4! recording, and this forms a second between adjacent wafers. The steps of supporting the wafers at their edges in the support frame are performed while the wafers are broken and bonded to the substrate such that the spacing between the wafers can sustain at least the wafers The array is supported in the support frame. Having a fluid, a liquid or a gas, through the circle, can assist in avoiding the accumulation of adjacent wafers and/or assisting in separating the wafers that have been stacked together. Preferably, the method includes the step of establishing a fluid flow on and/or between the wafers. Preferably, the 201125032 wafer system is positioned such that its major surface is configured to be substantially parallel to the direction of fluid flow. The clamping force is preferably applied when the wafers are placed in a position within the fluid flow. The wafers can thereby be clamped within the support frame when they are spaced apart from each other by the action of the fluid flow. If desired, the flow of fluid can be stopped after the wafers are supported within the support frame. The flow of fluid can be provided by supplying fluid from a spout. The wafers are typically bonded to the substrate by an adhesive. The step of removing the wafers from the substrate preferably comprises de-bonding the wafers, for example by immersing the wafers with the substrate in a degumming solution. Preferably, the method further comprises the step of cleaning the wafers. Cleaning such wafers is beneficial so that they can be used in processes that are sensitive to their condition. Preferably, the step of cleaning the wafers occurs after the step of supporting the wafers in the support frame. As such, the wafers can be supported in place during the step of cleaning the wafers to assist in the cleaning process. The step of cleaning the wafers can be performed before and/or after the wafers have been separated from the substrate. Preferably, the wafer systems are supported whereby movement of the wafers in the first direction (where they are separated from one another) is inhibited or substantially avoided. Additionally, the step of supporting the wafers enables the wafers to be drawn in a second direction on the plane of the wafers. This configuration allows the wafers to be displaced from the support frame in the second direction against relatively little resistance, respectively. Preferably, the wafers are displaceable from the support frame in the second direction of the 20111203232 even when the force is applied. However, the separation of the circles can be maintained by the suppression of the relative movement of the wafers in the first direction. The X-clamping force may be replaced by at least one of the holding members of the wafer by a mechanical actuator (e.g., a barometric pressure). It is assumed that the force exerted by the actuator to apply the blame (four) disengagement force will be distributed throughout the wafer of the support frame (10). Thus, the clamping force applied to each crystal = will vary depending on the number of wafers in the holder. Therefore, if the wafer is removed from the stand, the clamping force applied to each of the remaining wafers increases. A control (4) can be provided to react to the number of crystals in the reading frame to adjust the loss of holding force imparted by the mechanical actuator. In the specific example of the car father, at least one inflatable drop-off member is provided. - the clamping force is preferably applied by bulging the inflatable gripping member. This provides an effective method for ensuring that the wafers are properly secured, at least in a preferred embodiment. Among them, it is relatively easy to control. The use of an inflatable gripping member can help ensure that a constant clamping force is applied to each wafer of (iv), not the total number of wafers within it. This is particularly desirable to avoid damaging the wafers when they are being held. The method according to the invention may comprise the step of arranging the wafers into a vertical array (ie, the longitudinal direction of the array is substantially vertical) while being cut into the support frame . In other words, the crystal systems are pour into the pile (4) into the pile above the other. The 201125032 method can include the step of rotating the array around its horizontal axis such that the wafers are arranged in a vertical array above the other. The support preferably maintains the space between adjacent wafers even when the array is in a vertical orientation. The method can include the step of withdrawing a tip wafer from the array. When the array is vertically configured, the uppermost wafer is typically extracted from the array. Preferably, the vertical array of wafers is at least partially submerged within a liquid. At least a portion of the upper surface of the uppermost wafer is preferably lifted above the level of the liquid while the remaining wafers in the array are partially or completely submerged. Preferably, the leading edge of the uppermost wafer (i.e., the edge of the wafer facing the direction of movement of the wafer as it is withdrawn from the array) protrudes from the level of the liquid Above, when the wafer system is ready for extraction. In the condition of the arrangement of the wafers inclined at an angle relative to the horizontal line, the trailing edge of the uppermost wafer (ie, the edge facing the opposite direction of the moving direction when the wafer is extracted) may be Immersed below the level of the liquid when the wafer is ready for extraction. Preferably, only the uppermost wafer in the array is lifted above the meniscus of the liquid in the bath. In fact, however, it may be necessary to raise the top 2, 3 or 4 wafers above the level of the liquid. The array of crystals is preferably lifted at various times each time a wafer is removed to maintain the uppermost wafer at substantially the same position relative to the surface of the liquid. Preferably, a flow of fluid, a gas or a liquid, is established over at least a portion of the major surface of the wafer to be withdrawn from the array. The fluid helium is supplied by a nozzle or by establishing a container or tank that flows into the array of 201125032. It is assumed that the flow system is provided by a nozzle which may be directed substantially perpendicular to the major surface of the wafer or directed at an acute angle to one of the major surfaces of the wafer. The fluid is preferably directed over the exposed surface of the wafer (e.g., the top surface of the uppermost wafer) when the array is vertically disposed. This fluid flow can assist in removing debris from the array, such as fragments of broken wafers. The fluid flow preferably moves over the wafer in a direction opposite to the direction of movement of the wafer as it is withdrawn from the array (ie, from the leading edge of the wafer toward the trailing edge of the wafer) ). A spreader plate for reducing the load on the wafers can be provided. The method can include the step of removing the array of wafers toward the spreader plate as each wafer is withdrawn. Preferably, the distance between the spreader plate and the uppermost crystal circle is maintained to be substantially constant. Although the wafers can be withdrawn from the support in batches of two or more wafers, the method preferably includes the step of withdrawing the crystals from the support one at a time. The wafers can be drawn by bonding the wafer to be withdrawn to a suction or vacuum liner. Preferably, however, the wafer to be drawn is joined by a friction pad. The friction pad preferably contacts the major surface of the wafer to be drawn. §Hai friction model*. The wafer is connected to the wafer and can be removed to extract the wafer from the support. In at least preferred embodiments, a friction pad can be used to apply sufficient force to remove the wafer from the support without applying a suction or vacuum force to engage the wafer. The array of wafers can be positioned to maintain wafers in a substantially horizontal position. Preferably, however, the array is configured whereby each wafer 10 201125032 is tilted at an acute angle to the horizontal. The wafers are preferably inclined at an angle between 0 and 45 for the horizontal; or at an angle between 5 and 30. Most preferably, the wafers are each tilted at an angle of approximately 15° to the horizontal. According to a second aspect of the invention, a support frame is provided for use in the first aspect. The holder includes a clipper and can be used to maintain a space between the plurality of wafers when they are removed from a substrate to which they are glued. The clip can be used to provide a separate wafer that can access one of the shelves separately. According to a third aspect of the present invention, a support frame is provided for supporting a plurality of wafers and maintaining a space between adjacent wafers, the support frame comprising: a clamping assembly having Bonding at least first and second clamps of opposite edges of the plurality of wafers to support the wafers and maintaining a space between adjacent wafers; wherein the first and second clamps are configured to be substantially The movement of the wafers in the first direction is avoided, wherein the wafers are separated from each other in the first direction. The first and second clamps are preferably assembled to enable the wafers to be drawn from the support in a second direction on the plane of the respective wafers. A mechanical actuator can be provided to actuate the first clamp and/or the second clamp. Preferably, however, the first clamp and/or the second clamp are inflatable. The collet may, for example, comprise an inflatable pouch. A flow control device can be provided to isolate a first inflatable clip and a 201125032 second inflatable clip. The first and second inflatable clips can be isolated from each other when a puncture occurs in one of the clips. The clamping members can be automatically isolated from one another. A pressure sensor can be provided to enable a control system to determine when a clamping member has been damaged and should be replaced. In some preferred embodiments, the clips can each comprise a removable outer member. As such, it is assumed that if the external component becomes damaged or dirty, it can be removed from the clamping member for repair, cleaning or replacement. Optionally or additionally, the clips may contain some self-reconstituting material, such as a foam or liquid. Self-healing substances can act to repair or seal the clips where the holes appear, such as punctures. This is especially useful in the case of inflatable clamps. A spreader plate is preferably provided to control the load applied to a wafer in the array. When a wafer is withdrawn, for example, due to the expansion of the clamping member, the load applied to an adjacent wafer can be increased. The spreader panel can control any such expansion and thereby maintain a substantially uniform load on the wafers when they are processed by the support. The spreader plate is preferably movably associated with the first and second clamps, whereby the distance between the spreader plate and the uppermost wafer in the array is used It is maintained to be substantially unchanged. The clips are preferably deformable to facilitate deformation around the edges of the wafers. This deformation effectively creates a groove to be formed in the flexible clips when a clamping force is applied to a wafer. The trench allows each wafer to move in its own plane (i.e., the second direction). Preferably, the 12 201125032 clips are formed from an elastomeric material such as rubber or other elastomeric material. In other embodiments, the clips can be rigid. Each of the first clamps and/or the second clamps may comprise one or more ridges. These ridges can help maintain the separation of the wafers while allowing the wafers to move in their respective planes. Preferably, the ridges extend in a direction in which the wafers are separated (the first direction). The support frame preferably includes means for engaging a wafer to be withdrawn from the support frame. The engagement member can comprise a suction or vacuum cushion. Preferably, however, the engagement member includes a friction pad for engaging the major surface of the wafer to be withdrawn from the support. In use, the friction pad is movable with the wafer to remove the wafer from the support, for example, onto a conveyor (e.g., an endless conveyor). The support frame is preferably provided with at least one nozzle for directing a fluid, a gas or a liquid onto the wafers when they are supported within the support. The at least one nozzle is preferably configured to direct the flow of fluid over the major surface of a wafer to be withdrawn from the array. The nozzle is preferably configured to direct the fluid substantially perpendicular to the major surface of the wafer or to an acute angle to the major surface of the wafer. The at least one nozzle can be mounted, for example, above the spreader plate. BRIEF DESCRIPTION OF THE DRAWINGS Preferred embodiments of the present invention will now be described, by way of example only, with respect to the accompanying drawings, wherein: Figure 1A shows a side view of an array of tantalum wafers coupled to a substrate, 13 -5. . 201125032 Figure 1B shows an end view of the array of the wafers of Figure 1A; Figure 2A shows a preferred embodiment of the clamp assembly fixed to the array of Shixi wafers in accordance with a preferred embodiment of the present invention. Figure 2B shows an end view of the clamping assembly in accordance with the present invention; Figure 3A shows an end view of the clamping assembly in the disengaged position in accordance with the present invention; Figure 3B shows the clip in accordance with the present invention; The end view of the assembly at the joint position; FIG. 4 shows a plurality of tantalum wafers that have been adhered to each other; FIG. 5A shows the wafer from being supported in the clamp assembly according to the present invention. The array removes the substrate; Figure 5B shows an end view of the features of Figure 5A; Figure 6A shows the removal of an additional frame from the array of supports supported in the clamping assembly in accordance with the present invention Wafer; Figure 6B shows a plan view of removal from an individual wafer supported in a clamping assembly in accordance with the present invention; Figures 7A and 7B schematically illustrate a second embodiment of the present invention Specific examples; Figure 8 shows support for a second specific example in accordance with the present invention An enlarged view of an array of wafers in the extraction slot; FIGS. 9A and 9B schematically show a modified version of the second specific example of the present invention; FIGS. 10A and 10B schematically show the present invention a third specific example; 14 201125032 苐11A diagram and hb diagram schematically show a modified version of the third embodiment of the present invention; 苐12 graphically shows a friction pad according to the present invention; Figure 13 schematically shows the pneumatic system for the clamping assembly. I 10,000 Pack Mode] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of a method and apparatus according to one embodiment of the present invention will now be presented. The first diagram is for example an array of wafers 1 to be used in the manufacture of solar cells. Wafer 1 is bonded to a substrate assembly 3 to facilitate processing during the production process as described in more detail herein. The wafers 1 are substantially rectangular in plan form and are preferably substantially square. The corners of the wafers may be curved or chamfered. The wafers 1 are substantially planar and each have a thickness between 1 and 3 legs. The distance between the adjacent wafers 1 at the position where the adjacent wafer cassettes are bonded to the substrate assembly 3 is approximately just 2 〇〇 um in the longitudinal direction (ie, perpendicular to the surface of the wafer) Typically, between 500 and 2000 wafers are formed in the array and subsequent processing steps are performed on the entire array. The substrate assembly 3 is mounted on a metal a glass plate 3a on the shelf 3b. The glaze block is bonded to the glass plate 3a using a suitable adhesive 4. The slab is joined and cut using a conventional multi-pass cutting technique to form a new slab. The individual wafer defects of the array of s. The saw is thoroughly cut through the block and typically cut to the glass plate 3 a to ensure that the formed tantalum wafers t are not joined together. After the cutting process has been completed The wafers 1 are selectively held to the glass plate 3a at each end of the array by means of 15 201125032. The adhesives are each provided to be bonded to the top edge of the glass plate 3a to selectively provide one of the uncut stones. Early wall layer 2 (or end cheek) to protect the The array, as shown in Figure 1B. Figures 2A and 2B illustrate an array of clamping assemblies for supporting a silicon wafer in accordance with a preferred embodiment of the present invention. Formed by a frame (not shown) of two pairs of opposing clamping members 5. Two of the missing members 5 are disposed on one side of the wafer 1 while the remaining The two are disposed on opposite sides. By bringing the inner surfaces of the clamping members 5 into contact with opposite edges of the wafers, the wafers 1 can be held in this manner. In order to support them, while maintaining the germanium wafers 1 spaced apart from each other along the longitudinal axis x of the array. Thus, when the wafers are broken in the lost assembly, the wafer The spacer array of i is held. In the example, the material holding member 5 is an elongated member formed by the extrusion of the material of the elastomer, and it has been found that the poly-stone rubber is suitable for formation. The missing members 5. The clamping members 5 each have a bonding surface 6 that is in contact with the edges of the wafer cassettes; and:: a pressurized air supply to supply the pressurized home: ... as shown in the figure 3A, when the tenth member 4 is not inflated, the clamping edges are the same as the surface 6 The sides (four) of the wafer i. When the clamping members 5 are inflated, they are displaced inwardly to contact the edges of the wafers (10), and the edges of the surface 6 and the arrays that support the array 16 201125032 The circle, as shown in Fig. 3b, is not necessary for all of the holding members 5 in the clamping assembly to be inflated, and a combination of inflatable and elastic members can be provided, for example. The holding member 5 is expanded and in contact with the crucible wafer 1 , and the bonding surface only shapes around the edge of the crucible wafer crucible. The deformation formed limits a to the first of the plane perpendicular to the wafer. Movement in the direction. Celebrity, — '° '—The clamping assembly is actuated and the movement of the wafer 1 in its direction of separation is suppressed (ie, extending perpendicular to the pages of Figure 3B) a plane). However, the movement in the second direction of the plane of the respective wafers 1 (i.e., the plane of the page of the second figure) is less suppressed. The crystals m can be withdrawn by the clamping member 5, such as by moving it in the second direction, even when the clamping assembly is actuated. The pre-formed longitudinal ridges of the system y are selectively provided on the interior surfaces of the cool holdings, as shown in Figure 3_. The contacts/, Λ reduce the contact areas of the clamping members 5 and the edges of the crystals m. In addition, the ridges may be more easily deformed to be applied to the wafers. The load force may be two upper gates: the ridges may assist in removing individual crystals in the second side. In the first direction. The field is clamped to limit or avoid the integrity of the clamping members 5, and the inflation tube can be made from an outer 17 201125032. In the specific example, the holding members 5 are formed of a poly-oxygen extrudate having a hollow interior, and pressurized air is introduced into the hollow interior to make the clamping members 5 Swell, and apply - inflammatory pressure. It will be appreciated that the puncture of one of the missing members 5, for example, by cutting it off, may result in a reduction in the clamping force applied to support the wafers 1. In order to reduce the likelihood of this happening, a self-healing fluid may optionally be provided in the gripping members 5 to automatically repair any punctures thus formed. It is contemplated that, at least in preferred embodiments, a suitable clamping force may still be applied to hold the wafers in place even if one or more of the clamping members 5 have been puncture. One or more flow control devices may be provided to isolate each of the clamping members 5 from the other clamping members 5. One or more flow control devices may optionally be provided to isolate the different sets of the #clamping members 5 from each other. Such a configuration is advantageous as it is possible to avoid deflation of all of the gripping members 5, and if one is punctured. The flow control device can, for example, comprise a self-sealing pneumatic connector, a flow restrictor or a check valve. In the present embodiment, the clamping assembly and the missing members 5 are in the form of a card E that can be carried. This card E can be used to carry an array of wafers 1 between the steps of the production process. In other implementations, the clamping assembly can be held in a fixed position with all of the steps that occur, and the wafers 1 are clamped at that location. As mentioned above, the wafer 1 (10) column is formed by a multi-pass line cutting technique. A cutting fluid is typically used during such processes and a slurry of liquid continues to be present once the cutting has been completed. As far as its 18, 2011,250,32, each wafer 1 is surrounded by a liquid. The surface tension and/or capillary action formed between the surfaces of adjacent wafers 1 can cause them to gather together, resulting in an aggregation effect whereby adjacent wafers 1 are in contact with one another, as illustrated in Figure 4. It can be proved that it is difficult to separate the wafers 1 when the wafers 1 are condensed together in this manner. In order to remove or reduce the aggregation effect, a flow of liquid is introduced between the wafers 1. The flow of this liquid is sufficient to ensure that each wafer 1 does not touch any adjacent wafer defects. The wafer cassettes are typically placed in the liquid stream for between 1 and 60 seconds (during the time period envisaged to lengthen) to ensure that the wafers 1 have been separated from each other (in other words, they have not been gathered yet) ). Despite the flow of this liquid, these wafers! It is then secured by the clamping assembly as illustrated in Figures 2A, 2B, 3A and 3B. The clamping assembly is configured to support the wafers i in the array while maintaining a space between adjacent wafers 1 at least at the edges thereof. The flow of the liquid can be selectively stopped, such that the wafer defects have been squashed into the continuation assembly, and their positions relative to each other (at least at the edges thereof) are The clamping assembly is substantially fixed. It should be done - a cleaning step to remove the wafers around the stone! The cutting fluid and any other contaminants. This cleaning step can be performed before the wafers 1 are held. However, it is preferable to carry out the cleaning step after the (iv) wafer i has been held in the lost holding assembly. This is because the separation between the two is ensured by holding the "Hai Xi wafer 1 inflammation in the clamping assembly, allowing cleaning fluid to enter and exit the entire surface of each wafer. The stone wafer 1 is then separated from the substrate assembly 3. For better S. 19 201125032 In the embodiment, this step is performed by debonding the germanium wafer 1 from the substrate assembly 3. The degumming process involves bathing the crucible wafers in a degumming liquid, such as a hot dilute organic acid (preferably at a temperature of lactic acid and having a temperature of 10%) or other suitable formulation. The array of wafers 1 is introduced into a degumming bath while it is supported within the clamping assembly. The glue system coupling the germanium wafer 1 to the substrate assembly 3 is released in the win/groove, so that the β-base substrate assembly 3 can be physically removed from the broken wafers 1, such as 5Α and 5Β are shown in the figure. The clamping assembly supports the wafers in the array to maintain a space between adjacent wafers i once the wafers 1 have been released from the substrate assembly 3. The wafers 1 can be removed from the clamping assembly one by one. The step of removing individual wafers from the array is referred to herein as extraction. The wafers i are transferred to an extraction bath for extraction from the clamping assembly one by one. The extraction bath typically contains a dilute solution, such as water and detergent, to assist in performing additional cleaning of the wafer. The wafer cassettes can be selectively transferred from the degumming bath to a cleaning bath containing a cleaning liquid. As shown in Figure 6A, the array is rotated through 90 in order to extract the crystal 1' from the clamping assembly. The circumference of the horizontal axis Y is such that the longitudinal axis X of the array is vertically disposed and the wafers are placed one above the other. It will be appreciated that the clamping assembly is between abutting wafers 1 in the array, holding a space even when it is configured in this vertical orientation. The rotation of the array of wafers 1 can be performed during/after/after the step of transferring the array to the extraction bath. If the array transports the wafers 1 in a vertical orientation (ie, the longitudinal axis of the array is horizontally disposed), the liquid between the wafers 1 tends to flow off at 20 201125032 and this may result in wafer aggregation. Together. In view of this, the array is preferably transported with substantially horizontal positioning of the major surfaces of the wafers 1 (i.e., the longitudinal axis X of the array is substantially vertically disposed) to reduce the wafers from the wafers. Discharge of liquid between 1 . A liquid may be selectively supplied over the wafers 1 in the array, such as being transported to reduce at least some of the liquid that may be discharged between the wafers 1 and thereby assist in avoiding the wafers 1 The gathering. The array of wafers 1 is sunk into, for example, the liquid contained in the extraction bath, which allows any wafers 1 that may have gathered together during the transport step to be separated from one another. When the wafers 1 are supported within the clamping assembly, it is not necessary to establish a fluid flow between them or the like to separate them. The clamping assembly is placed in the extraction bath and the longitudinal axis Y of the array is disposed substantially vertically. As can be seen in Figure 6A, a majority of the wafers 1 are immersed in the cleaning liquid while at least the top surface of the uppermost wafer 1 is present on the surface 8 of the liquid. Preferably, the top wafer 1 is removed over the meniscus of the liquid while the other wafers 1 in the array remain immersed in the liquid in the extraction bath. This configuration is satisfactory because it facilitates removal of the uppermost wafer 1 from the array while the remainder of the wafer remains supported within the clamping assembly. As shown in the enlarged view of FIG. 6A, the uppermost wafer cassette can be laterally extracted from the array by sliding it on its own plane in the second direction, via FIG. 6A. Figure A is illustrated by arrow A. It will be appreciated that the wafer cassette at the top can be withdrawn from the clamping assembly in this manner when the clamps 21 & 201125032 hold the member inflated. The uppermost wafer 丨' is shown in Figure 6 to be partially removed from the array. Figure 6B shows a plan view of one of the arrays of Shi Xi wafer 1 and illustrates a second direction in which a wafer 1 can be removed from the array. A brake member or guide member can be provided to prevent the wafer from being drawn in the opposite direction. A friction pad 9 is provided to engage the topmost wafer cassette, the top surface thereof and to slide out between the clamping members 5. The friction pad 9 is smooth and flexible to adjust for deviations in the vertical position of the uppermost wafer cassette within the clamping assembly. The friction pad 9 may be formed of leather, a polyamine phthalate elastomer (e.g., Sylomer®) or other material having a suitable frictional force on the surface of the uppermost wafer i. Instead of the friction pad 9 or in addition to the friction pad 9', a suction or vacuum liner can be used to join the uppermost wafer cassette. A central portion of the friction profile 9 can, for example, form a vacuum liner. However, a relatively low force should be applied to reduce the risk of damaging the uppermost wafer 1'. The suction pad can be formed from a small apertured material such as Sylomer®. A wafer processing apparatus 17 for bonding the uppermost wafer cassette is described below with reference to Fig. 2. The uppermost wafer cassette is typically displaced from the clamp assembly to a loop conveyor or other transport member for further processing. To assist in reducing the load applied to the wafers 1, a spreader plate 10 is provided on top of the clamp assembly. The spreader plate 1 is moved relative to the clamping members 5, whereby when the wafer 1 is withdrawn from the clamping assembly, 22 201125032 is located relative to the uppermost wafer in the array i, remain essentially: changed. The spreader plate 10 is typically displaced from the uppermost wafer i: between 1 and 1 〇 _, and preferably about two from the crystal. The spreader plate assists in reducing the extent to which the gripping members 5 (due to the expansion) are in the area above the remaining crystals. There is no such money 10' when the removal of - crystal m will be the same, resulting in the application of increased load on the next wafer in the array! Above (four) the wafer is located at the top of the array) . The spreader plate K) is preferably w-like and comprises 2 arms (not shown) spaced apart from each other. An actuator (not shown), such as a pneumatic cylinder, is provided to move the arms relative to each other. The actuator can cause the arms to be displaced toward each other and the effective width is allowed to be placed between the clamping members 5 above the array of wafers 1 once in place, The arms extend outwardly of the arms such that the spreader plate 1 engages the clamping members 5. The spreader plate 1 has substantially the same width as the wafers k when the arms are in their extended positions. The arms of the spreader plate H) are continuously extended during the process in which the crystals are withdrawn from the clamp assembly. When each wafer 1 is drawn, the clamping assembly is displaced upward to lift the array of wafers 1 gradually leaving the next crystal m' of the liquid in the extraction bath, at least the top surface being displaced away _ liquid. As the gripping assembly is displaced upwardly, the spreader plate 10 slides along the gripping members 5, whereby its position remains substantially fixed relative to the uppermost wafer stack. - a low friction coating, such as Tefl_, can be optionally provided. 23 201125032 contacts the regions of the clamping members 5 above the arms of the spreader plate to facilitate sliding of the spreader plate 10. Preferably, however, at least the arms of the spreader panel 10 are comprised of a low friction material such as Teflon® or glass. At least one nozzle (not shown) is provided to direct a fluid flow over the upper surface of the uppermost wafer cassette in the array. In this embodiment, a plurality of nozzles are provided to direct liquid onto the uppermost wafer 1' to create a fluid stream. Move above the main surface of the upper part. A nozzle is provided over the arm of the spreader plate 10 and is configured to direct the liquid substantially perpendicular to the top surface of the uppermost wafer 1. The flow of the formed liquid can assist in cleaning the wafers 1' by way of example by removing any tape that has been separated from the substrate assembly 3 and becomes trapped between the wafers 1. In addition, the flow of the liquid can remove any fragments of the broken wafer crucible, which can otherwise be transported by the friction pad 9. Instead of or in addition to directing liquid from one or more nozzles onto the uppermost wafer cassette, a flow of liquid may also be established in the extraction bath to assist in cleaning and cracking of the wafer 1 The removal of any fragment of circle i. The far flow is preferably established in a direction opposite to the direction in which the crystal circles 1 are removed from the array. The flow can be established by providing a sump to establish 'liquid and any debris from the extraction bath - flowing into the liquid contained therein for continuous filling, not by The supply of fresh liquid is achieved by recirculating the liquid from the cold puddle. The suction can be used to improve the flow of the liquid in the extraction bath and/or to adjust the applied force. 24 201125032 Although the vertical axis x of the array is Substantially vertically disposed, the clamping assembly allows the wafers 1 to be removed laterally but inhibits the vertical movement of the wafers 1. As such, the individual wafers 1 can be sequentially and automatically Selecting from the clamping assembly, but always maintaining a space between the wafers 1. Even if the wafers 1 are each supported on opposite edges, they can be sufficiently flexed and bent so that adjacent wafers The surfaces of 1 are in contact with each other. However, the configuration of the present invention whereby at least the edges of the wafers 1 are spaced apart from each other allows the wafers 1 to be more easily extracted from the array. If necessary, a liquid can be cited. Between the wafers 1 to facilitate separation of the contact faces of adjacent wafers 1. The liquid may be introduced between the wafers 1 by the flow of liquid or simply by maintaining the wafers 1 is at least partially submerged. The second specific example will now be described with respect to Figures 7A and 7B. This embodiment uses the same instrument and similar reference as the first specific example described herein. The numbers have been used for similar components. The wafers 1 are introduced into a degumming bath 11 while they are bonded to the glass substrate 3a. The degumming bath 11 contains a degumming solution, such as hot organic The acid, and the flow of the degumming solution, are established in the degumming bath 11. As illustrated by arrow B in Figure 7A, the degumming solution flows in a lateral direction associated with the wafers 1 to promote the crystals. The flow of liquid between the circles 1 and thereby assists in avoiding the wafers 1 being gathered together. The clamping assembly is then placed around the array of wafers 1 and a clamping force is applied to support the The wafers 1 within the assembly are clamped. The wafers 1 are supported in the debonding bath 11 and the longitudinal axis X of the array extends horizontally. 25 201125032 Bonding the wafer 1 to the substrate 3a Released in the degumming bath core 11 and the substrate assembly 3 is removed, so that the wafers 1 are in the struts, within the array, within the clamping assembly. The line is supported by an automatic processing instrument with reference to reference numeral 12 of the 7th collapsed towel. The inflammatory system is rotated 90 turns and turns around the longitudinal axis X of the array (illustrated by arrow C). (d) The periphery of the horizontal axis γ (illustrated by arrow D) passes through 9G, whereby the crystal systems are configured to be directly above each other in the array. The wafers can be selectively transported to the array. A draw (four) 13 'the same day New Zealand supports the vertical axis X of the array of the county Xian (four) array substantially horizontal. It will be understood that the rotation of the array around the longitudinal axis and the horizontal axis 可以 can be performed simultaneously or in any order as two not 5 ', and then the rotation of the 'money holding assembly can be used in the degumming bath. I] is performed inside or outside the degumming bath 11. The H1 is taken into the extraction bath and the total holding 2 is clamped by the longitudinal direction of the array to the angle of the vertical line. From the specific example, the array _ vertical axis W green a Each of the wafers 1 is drawn from the clamping assembly in the same manner as in the case of the age. When the wafer 1 is tilted, the broken wafer fragments and/or fragments are more easily transported to the surface of the uppermost wafer i, the upper surface. The supply liquid is particularly effective when the array phantom W is tilted away when any debris is removed, whereby the surface 26 201125032 of the crystal m is tilted at an acute angle to the horizontal line. As in the first specific example, the clamping assembly is lifted up as each wafer 1 is withdrawn from the array. A spreader plate (not shown) is again provided to reduce the load on each wafer 1 prior to extraction. The wafers 1 are drawn by a friction pad 9, which is mounted over a conveyor that is generally automated with reference to one of the reference numerals 14 in Figure 7B. The wafers 1 are delivered to the belt conveyor 15 by the friction pad 9 for transporting the wafers 1. The wafers 1 can be subjected to a further cleaning cycle and/or a drying cycle before, for example, the final inspection. The wafers 1 can be sorted and packaged. A modified version of the second specific example of the present invention is illustrated in Figures 9A and 9B. Similar reference numerals have been used for similar components in this revision. The main difference in this configuration is that the wafers 1 are introduced into the holding bath 17, while they are bonded to the glass substrate 3a. The clamping assembly is disposed around the wafer 1 in the clamping bath and a holding force is applied while fluid flows between the wafers 1 (as illustrated by arrow B) ) to help avoid them from gathering together. The wafers 1 are transferred to the degumming bath 11 in the holding assembly and in the holding assembly. The remainder of the process is no different from the remainder of the second specific example described above. A third specific example of the present invention is illustrated in Figures 10A and 10B. This specific example uses the same instrument as the first and second specific examples described herein and similar reference numerals have been used again for similar components. The main difference between this particular example and the second specific example is that the clip 27 201125032 assembly is repositioned to place the wafers 1 at a location for extraction. In this embodiment, the array of wafers 1 is removed from the clamping assembly and the longitudinal axis X of the array is substantially horizontally disposed. Thus, when they are removed from the degumming bath, the wafers 1 are arranged substantially vertically. The crystals 1 pass through 90 around the longitudinal axis x of the array (illustrated by arrow E). And pass 90 around the horizontal axis Y of the array (illustrated by arrow F). The positioning is carried to the extraction bath 13 before the rotation. The repositioning of the wafers 1 can be performed outside of the extraction bath 13 or within the extraction bath 13. The wafers 1 are again placed in the extraction bath 13 and the longitudinal axis X of the array is configured to be approximately 15° to the vertical. Thus, the wafers 1 are approximately 15 horizontal lines. tilt. The wafers 1 are then withdrawn from the clamping assembly in the same manner as the second specific example described above. A modified version of the third embodiment of the present invention is illustrated in Figures 11 and 11B. Similar reference numerals have been used for similar components in this revision. As in the modified version of the second specific example, the main difference is that the wafers 1 are introduced into a holding bath 17, and are clamped to the clip before being introduced into the degumming bath 11. Within the assembly. The flow of liquid is established between the wafers 1 to help prevent them from gathering together. Although the wafers 1 are spaced apart from each other, the clamping force is applied to the branches which are equal to each other within the clamping assembly. The wafers 1 are transferred to the deinking bath 11. The remainder of the process is no different from the remainder of the third embodiment described above. The wafer processing apparatus 17 illustrated in Fig. 12 includes a liner 9 that is mounted over a 28 201125032 shroud 19 that is fixedly mounted over a backing plate 21. A series of chambers 23 are formed in the shroud 19 in fluid communication with the shim 9. A vacuum hose 25 connected to a pump (not shown) is mounted over the backing plate 21 for operatively reducing the pressure within the chambers 23. The pad 9 is porous and can be used as a friction pad and/or a suction pad to join the uppermost wafer 1 so that it can be withdrawn from the top of the stack. It will be appreciated that a relatively small decrease in pressure within the chambers 23 may be sufficient to engage the wafer 1'. The liner 9 can be a material having a small aperture, for example formed of a porous material or an open cell foam material. Optionally, or alternatively, a plurality of apertures may be formed in the liner 9 for establishing fluid communication with the chambers 23. In the latter configuration, the liner 9 can be formed from leather. However, in a preferred configuration, the liner 9 is a PUR-based elastomer such as Sylomer®. The structural diagram of the pneumatic system for actuating the clamping members 5 is shown in Figure 13. The system includes four inflatable gripping members 5 each having a flow control device 25 that isolates the gripping member 5 if a puncture occurs (for example, 'cutting through the wafer through the inflatable collet The flow system for causing the expansion of the shovel clamping member 5 is pressurized by a spring 27 (for example, a compressor) supplied from an air supply 29. The clamping members $ are disposed in the Above the individual branches of the pneumatic system and each branch has a flow regulator 31 and, optionally, a pressure sensor 33. A control system (not shown) is provided to control the pneumatic system. The device 33 can be used by the control system to detect the damaged inflatable type 29 201125032 holding member 5 and to mark it for replacement. The flow control device 25 in this configuration is a self-sealing pneumatic connector 25, Connected to the pressurized supply line to each of the clamping members 5. If a puncture occurs, the 气压# pneumatic connector seals the supply line to the pierced clamping member 5 and avoids or reduces leakage of pressurized fluid. Lack of flow control 襄The sealing supply line is placed, and a puncture may cause the entire of the missing members 5 to be deflated (partially or wholly) and the clamping force applied to support the wafers 1 to be reduced. It is understood that other types of flow control devices 25 can be used. Optionally, or in addition, more than one fluid pump 27 can be provided for supplying pressurized fluid to the clamping members 5. For example, each of the clamping members 5 It can be combined with a dedicated fluid pump 27. A variety of variations and modifications are contemplated for use in the methods and apparatus described herein. For example, to ensure proper selection of wafer defects within the clamping assembly Position, the instrument can include a sensor system to provide localization information for the position of the uppermost wafer 1 in the array. The sensor can be mechanical or electronic (laser/IR/visible). The position of the friction pad 9 can be controlled in response to the positioning data. Furthermore, it will be appreciated that several clamping assemblies can be supported in a swivel configuration to enable continuous wafer production and processing. Optionally, such clamping Assembly can Supported by a linear waiting system. The clamping assemblies can be sequentially ordered within the linear system to enable various processes to be performed in parallel. The positioning of the wafers 1 is referred to herein. The main table 30 201125032, unless otherwise specified. In particular, the reference to the horizontal configuration of the wafer 1 indicates that the main surface of the wafer 1 is horizontal; and the wafer 1 is vertical configuration The system indicates that the main surface of the wafer 1 is vertical. Similarly, the vertical configuration of the array indicates that the vertical axis X of the array is vertical; and the reference to the horizontal arrangement of the array indicates the vertical Axis X is horizontal. The specific examples of the present invention are intended to be used as examples of how the invention can be carried out. The modifications, variations and variations of the specific examples described are conceivable with appropriate skill and knowledge. Such modifications, variations and variations may be made without departing from the scope of the invention as defined in the appended claims. I: Schematic Description 3 FIG. 1A shows a side view of an array of germanium wafers coupled to a substrate; FIG. 1B shows an end view of the array of wafers after FIG. 1A; FIG. 2A shows A preferred embodiment of a preferred embodiment of the present invention is secured to a side view of an array of tantalum wafers; FIG. 2B shows an end view of the clamp assembly in accordance with the present invention; FIG. 3A shows Figure 3B shows an end view of the clamp assembly in the disengaged position, and Figure 4 shows an end view of the clamp assembly in the engaged position. Figure 4 shows a plurality of tantalum wafers that have been attached to each other. Figure 5A shows the support from the clamp assembly in accordance with the present invention. 31 201125032 The array of the wonderful wafer removes the substrate, the 5B diagram shows an end view of the features of FIG. 5A, and FIG. 6A shows the array of the crucible supported from the clamping assembly according to the present invention. Removing another wafer of enamel; Figure 6B shows a plan view of removal from an individual enamel wafer supported in a clamping assembly in accordance with the present invention; Figures 7A and 7B schematically show A second specific example of the present invention; FIG. 8 is an enlarged view showing an array of wafers supported in the extraction groove according to the second specific example of the present invention; FIGS. 9A and 9B are schematically illustrated A modified version of the second specific example of the present invention is shown; FIGS. 10A and 10B schematically show a third specific example of the present invention; FIGS. 11A and 11B schematically show the third embodiment of the present invention A modified version of a specific example; Fig. 12 is a view schematically showing a friction pad according to the present invention; and Fig. 13 is a view schematically showing a pneumatic system for the clamping assembly. [Description of main component symbols] 1, Γ, Γ '··· wafer 4... adhesive 2... barrier layer 3... substrate assembly 3a... glass plate 3b... metal frame 5··· clamping member 6... bonding surface 7···Internal chamber 8···Surface 32 201125032 9... Friction pad 21... Back plate 9... Overview 23... Chamber 10... Spreader plate 25... Vacuum hose 11... Degumming bath 25... Flow control Apparatus 13... extraction bath 25... self-sealing air pressure connector 14... automated conveyor 27... pump 15... belt conveyor 27... fluid pump 17... holding bath 29... air supply 17... wafer processing unit 31... flow Regulator 19...shield 33...pressure sensor 33 <