TW201123269A - Systems and methods for non-periodic pulse sequential lateral solidification - Google Patents

Abstract

The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart.

Description

201123269 VI. INSTRUCTIONS: [Reciprocal References] This application is based on 35 USC 119(e). US Patent Application No. 61/294,288, filed on January 12, 2010, and 12/9. The priority of U.S. Patent Application Serial No. 61/291,663, the entire disclosure of which is incorporated herein by reference. All patents, patent applications, patent publications and publications mentioned herein are expressly incorporated by reference. In the case that the application proposal and the documentary presentation are inconsistent, the application shall be examined and examined. TECHNICAL FIELD OF THE INVENTION The present invention relates to systems and methods for non-periodic pulse continuous lateral crystallization. [Prior Art] In the field of semiconductor processing, some teachings have condensed the conversion of amorphous quartz films into polycrystalline films. The teaching is - continuous lateral crystallization (sls). It is a pulsed laser crystallization process which can produce a polycrystalline film having elongated crystal grains on a substrate, such as a heat-resistant substrate (such as glass and plastic), but is not limited thereto. The SLS system and process examples are described in commonly-owned U.S. Patent Nos. 6,322,625, 6, 945, 6, 555, 449, and 6, 573, 531, the entireties of each of which are incorporated herein by reference. SLS uses position-controlled laser pulses to scatter the amorphous or 201123269 polycrystalline film area on the substrate. The fused region of the film is then laterally crystallized into a directional microcrystalline structure or a plurality of positionally controlled large single crystal regions. Typically, the melting/crystallization process is repeated continuously throughout the surface of the film. It can then be fabricated from a crystalline film - or a plurality of devices such as image sensors, active matrix liquid crystal display (AMLCD), and active matrix organic light emitting diode (AMOLED) display devices. In the AMLCD and ΑΜητ and AM〇LED display devices, a thin film transistor (4) column or TFT circuit is fabricated on a transparent substrate, and each transistor or circuit is used as a pixel controller. In traditional SLS systems, the factor of successful crystallization is the precision of the platform, moving the sample relative to the laser. For the current four-generation two-dimensional (10)) shirt SLS system, the platform moves at tens of centimeters per second (cm/s), for example 18 cm/s. Such platforms will partially deviate from the perfect moving line. Deviation is collectively referred to herein as platform shaking. Here, "platform shaking" means that when the platform moves along the laser path, its position will change and deviate from the predetermined position. The variation is, for example, when the platform moves in the x-direction, the platform is moved slightly along the direction y, and the projection system produces a dimensionally patterned beam that is SLS. Other methods can produce beam lines for the process. The problem associated with conventional single sweeps and platform shakes in secondary illumination SLS is that the long grain boundaries of the material produced by two consecutive laser pulses (i.e., secondary illumination materials) are non-equidistantly spaced. The single sweep process refers to the SLS process of a single scan = fully crystallized region on the substrate. The secondary illuminator refers to the SLS process that completely crystallizes a specific partial area with two laser pulses. The platform shake between the two pulses will cause the second pulse to overlap symmetrically with the first pulse not 201123269. Ideally, the second pulse beam is located in the middle of the region illuminated by the first pulse beam such that there is a fixed interval between the grain boundaries produced by the secondary illumination process. If the second pulse beam is not properly positioned due to the shaking of the platform, the grain of a certain day column may be shorter than that of the adjacent crystal column, and many grains remain in the wide crystal column of the width of the incompletely extended crystal column. (such as occluding crystal grains). Beam distortion caused by various aberrations of the other 'forked light members' also causes a partial asymmetric overlap of the second pulse during scanning. Here, "beam distortion" refers to projection light aberration, which results in uneven beam formation. SUMMARY OF THE INVENTION A non-periodic pulse SLS method and tool for continuously triggering lasers using position control is described herein. The system can use multiple lasers or single-laser to make non-periodic laser pulses in the crystallization process, especially in the laser wars. Melting and crystallization cycles. One or more lasers are used to coordinate the pulse sequence and illuminate and crystallize the selected membrane area with a single scan. For example, lighter (10) and faster than the early source pulse rate, the fast laser pulse from two different laser sources can improve the effective pulse rate of the local area by (4). It also allows for far-reaching, greater overlap between pulses, and no need to reduce the speed of platform movement.屮 _ The film overlap between the pulses of the two lasers can be greater than 70% or 95%, and the household lL ^ is greater than 99% in some cases. Such a large degree of overlap can alleviate the problem of platform® shaking and laser beam distortion. In any embodiment, the π-non-periodic pulsed continuous lateral junction 201123269 is used to treat the film 疋 direction. The method of advancing the film core, and simultaneously illuminating the film with the first laser pulse and the second laser pulse, the second laser pulse and the fourth laser pulse are irradiated with a second time interval: two first The time interval between the laser pulse and the first impulse - the half-shot pulse and the third laser pulse beam are sufficient to fuse the fluence of each of the pulses in the embodiment to provide a melted d-domain basin thickness. But it is laterally crystallized. In some embodiments, the regions are adjacent to each other. In some embodiments, the first and the first & fields are separated by a distance. In any embodiment, the first-first generation is a first laser pulse and a second laser pulse, and the second laser source produces a whistle _t', generating a first laser pulse and a fourth lightning Shoot the pulse. In some embodiments, the 'first and second laser sources generate pulses at a fixed rate. In some embodiments the 'first and second lasers are the same. In some embodiments, the first and second lasers are different. In some embodiments, the film continues to advance in a selected direction. - In any embodiment, the first and second laser pulses each provide a beam of light that overlaps in a first region of the thin web, and the respective beams provided by the third and fourth laser pulses overlap in a second region of the film. The amount of overlap in each region is greater than 90%, such as greater than 95% or greater than 99%. In any embodiment, the shaped beam can be obtained by directing a laser pulse through the mask and/or including a plurality of beams. In some embodiments, the beam is positioned at an angle relative to the edge of the film. In some embodiments, the edges of the film are positioned at an angle relative to the scan direction. In some embodiments, shaping the 201123269 beam is a dot pattern. In any embodiment, the first and second regions are spaced apart from each other and are separated by an unilluminated membrane region. In some embodiments, the first and second regions overlap by, for example, 10% or 1%. In any embodiment, the electronic device is fabricated in the first region and the second region, and the region is sized to accommodate circuitry belonging to the nodes of the matrix type electronic device. In one aspect, this document relates to films treated in accordance with the methods described. The film can be used to fabricate electronic devices, including devices having thin film transistors in the first and second regions of the film. ^ In one aspect, the method of treating a film while advancing the film at a fixed velocity in a selected direction 'includes a first beam of the film provided by a laser beam from a primary laser source to illuminate the first region of the film A second beam of light from the laser source of the secondary laser source illuminates a second region of the film, and a third beam provided by a laser pulse from the primary laser source illuminates a third region of the film. In some embodiments, the first, second, and third beams are fluent enough to melt the entire film thickness of the irradiated film region' and laterally crystallize into one or more lateral growth crystals upon cooling, and

The amount of illumination overlap between the first and second regions is greater than the amount of illumination overlap between the second and third regions. In one aspect, this is a method for processing a film while advancing the thin crucible in a selected direction. In the first time, the first shot is generated from the laser pulse of the main laser, the ά ά ', the raw plastic beam bundle, and the first region of the film irradiated by the first shaping beam to form the first melt a molten region which, when cooled, is crystallized into a first set of crystalline regions by a cross-section 201123269; at a second time, a first shaped beam is generated from a laser pulse of a secondary laser source, and the film is illuminated by a second shaped beam a first region forming a second melting region that crystallizes laterally into a second set of crystalline regions upon cooling; and at a third time, a third shaped beam from another laser pulse of the primary laser source, and The third shaped beam illuminates the second region of the film to form a third molten region that crystallizes laterally into a third set of crystalline regions upon cooling. In some embodiments, the time interval between the first time and the third time exceeds twice the time interval between the first time and the second time. In one aspect, this document relates to a system for processing a film, including primary and secondary laser sources for generating laser pulses, a system for generating a shaped beam from a laser pulse, for fixing a film on a substrate. The working surface, the platform for moving the film relative to the beam pulse, and thereby generating the direction of the laser beam pulse propagation on the surface of the film, and the computer for processing the platform to synchronize the laser pulse command, so that the film loaded on the mobile platform is An area is illuminated by a first set of one or more shaped beams provided by a laser pulse from a primary source, the second area of the film being provided by a second set of one or more shaped laser pulses from a secondary source The beam is illuminated and the second region of the film is illuminated by a third set of one or more shaped beams provided by laser pulses from the primary source. In some embodiments, the processing instructions are for moving the film relative to the beam pulse in a direction of propagation to illuminate the first and second regions 'where the amount of illumination overlap between the first and second regions is greater than between the third regions of the second disk The amount of overlap is illuminated. In some embodiments, the system also includes a system for sample alignment. [2011] [Embodiment] A non-periodic pulse SLS method and tool for continuously triggering a plurality of lasers using position control are described herein. Multiple lasers can produce different non-periodic laser pulses in the crystallization process, i.e., the different laser pulses cause respective cycles of crystallization and crystallization. Two or more lasers are used to coordinate the pulse sequence' and illuminate and crystallize the selected film regions in a single scan. Compared to the single-source pulse rate, the (four) laser pulse sequence from two different (four) sources can increase the effective pulse rate for processing local regions. It also allows for greater overlap between successive pulses without reducing the speed of platform movement: the overlap of membranes between pulses from two lasers can be greater than or 95%, and in some cases greater than 99%. This large degree of overlap reduces the problem of platform shake and laser beam distortion. Rear

The method and system can be applied to conventional two-dimensional projection SLS at high throughput. In addition, non-periodic pulse SLS methods and tools can also be used to perform selective area crystallization (SAC) films, thereby crystallizing only the film regions of the electronic device to be formed. . The non-periodic pulse SLS method and the tool provide a partial overlap of the first pulse of the Me or multiple lasers, and in some cases a substantial overlap (ie, greater than the gift), causing the first region of the film to grow in a slender crystal, followed by a laser. The repetition rate is interrupted for a period of time, and then the second pulses of the two or more lasers are substantially overlapped to cause elongated crystal growth in the second region of the film. The laser pulse that causes the non-circumferential (four) laser pulse sequence to physically overlap with the illuminated area is shown in Figure W5C, which will be detailed in the 201123269 process. Low-temperature polycrystalline WLTPS) technology is required for large diameter am〇led displays that produce sufficient brightness and/or lifetime. SLS is a well-received laser based LTPS technology - the SLS system is expected to have a large platform to handle large panels and more laser power to achieve adequate throughput (high pulse repetition rate and / or high pulse energy). Although having a fast platform and high pulse repetition rate alone has been shown to reduce wobble and its impact on microstructures (platform inertia and short pulse interval), the need for large platforms and small grains still makes platform design more challenging and The platform is also more expensive. On the other hand, the non-periodic pulse can greatly shorten the time of two consecutive overlapping pulses to the moment when the platform between the two pulses deviates from the substantial change, while effectively reducing the difficulty of platform design. Increasing the amount of overlap between pulses is beneficial to reduce the negative effects of platform shake and proper overlapping image distortion between beams. The execution of the non-periodic pulse sls may employ a beam that is oriented to move relative to the platform in any direction. In reality, however, a vertical beam (such as a vertical platform moving direction) can provide a larger pulse weight of 4's. Therefore, the method is more advantageous. For a SLS using a long rectangular beam, such as a secondary illumination SLS process, The maximum degree of pulse overlap can be established using the main vertical directional beam. Although a horizontal beam can be used in accordance with the non-periodic pulse SLS method, it is preferable to use a vertical beam in order to achieve a high degree of overlap between pulses. "Vertical Beam Alignment" is described in "Systems and Methods for Uniform SequentUi" ("Systems and Methods for Uniform SequentUi")

Lateral Solidification of Thin Films Using High 201123269

U.S. Patent Application Serial No. i2/〇63,8i4, the entire disclosure of which is hereby incorporated by reference in its entirety for the purpose of clearly explaining the features and advantages of non-periodic pulse SLS, first describing single-person scanning and one-person Irradiate the SLS. Figure 1 shows an example of a system that can be used in a 2D SLS process. A light source (such as an excimer laser 11 产生) produces a pulsed laser beam that passes a pulse delay before passing through optical components such as mirrors 130, 140, 16 〇, telescope 135, homogenizer 145, beam splitter 155, and lens 165. The laser 120 and the attenuation plate 125 are then passed through a mask 170 that is placed on a moving platform (not shown) and a projection light 195. The projection light reduces the size of the laser beam while increasing the intensity of the light at a predetermined position of the illumination film. Membrane 199 is placed on a precision x_y_z stage 198 which accurately positions film 199 underneath the beam and assists in focusing or defocusing the image of the mask 17 produced by the laser beam at a predetermined location on film 199. In an exemplary embodiment, the platform includes a mechanism for moving the work surface on which the substrate is placed and/or a projection lens to move the substrate and the projection lens relative to one another. The characteristics of the laser crystallization system that can be used in the SLS process are primarily dependent on the source of the laser. For example, high frequency lasers with low energy pulses (several kilohertz or up to tens of kilohertz or more) are used to create elongated lines for so-called "line scan SLS". The beam length is greater than one or more displays and is either a fractional rate or a glass panel size that cuts the display. The fraction can range from about 1/2 to about 1/16 of the panel, such as panel I/O with high power low frequency lasers (eg 3 Hz or 600 Hz or more and 300 watts (W) or 600 W) Or above) Not suitable for line scan SLS mode, because the pulse energy is too high (1 joule level)' so that a rectangular beam is formed to scan the entire film surface. Using this 12 201123269 laser special SLS system type (such as Japan Steel Works, Ltd. from Japan) uses a two-dimensional (2D) projection system to produce typical short-axis dimensions of approximately 0.5 mm (mm) to 2 mm and typical Rectangular laser pulses with a long axis dimension of approximately i5 mm to 30 mm. The at least one dimension of the molten region for continuous lateral crystallization is 2 times the lateral grain growth, for example, about 2 micrometers (μm) to 6 μm. Therefore, a rectangular laser beam can be shielded to provide a plurality of small-sized beams. Instead of using a mask with other optical means of controlling the beam, such as creating an interference pattern 'which forms a light pattern similar to a mask, a plurality of appropriately sized beams can also be provided. In the SLS mode where a plurality of beams are used to form a highly uniform crystalline film, the irradiation of a particular region of the film with two different laser pulses completes the film, providing a faster way to fabricate the polycrystalline semiconductor film. This method generally refers to secondary illumination of the SLS. Additional details of secondary exposure and other SLS methods and systems can be found in the description of "Methods and Systems for Providing Continuous Movement and Continuous Lateral Crystallography (Meth〇d and System

Providing a Continuous Motion Sequential Lateral

Solidification), U.S. Patent No. 6,3,68,945, the entire disclosure of which is incorporated herein by reference. The secondary illumination SLS can be performed in a single scan. This is called a single scan SLS, in which the beam pulse is patterned into a beam array. Its long axis is usually aligned with the parallel scan direction. See the description for "Continuous movement with a single scan." Method and System for Providing a Single-Scan,

"Continuous Motion Sequential Lateral Solidification", U.S. Patent No. 6,908,835, the entire disclosure of which is incorporated herein by reference. 13 201123269 Fig. 2A shows a mask as described in U.S. Patent No. 6,908,835, which is incorporated herein by reference to the SLS method of the first embodiment of the system for performing a single scan and the Gos mobile LS process. The mask includes a plurality of rectangular slits of a plurality of arrays 210, 215 that transfer and shape the laser beam to produce a plurality of beam illumination films. The other part of the mask (non-slit) is opaque. The mask can be made of a transparent substrate such as quartz and includes a metal or dielectric coating that is etched into a mask of any shape or size by conventional techniques. It should be understood that the illustrated mask is merely illustrative, and that the size and aspect ratio of the slit are substantially variable and are related to the predetermined processing speed, the energy density required to melt the film of the illuminated area, and the available pulse energy. A set of slits 21 偏离 are offset from the second set of slits 215 toward the X-axis and the y-axis. Generally, the specific slit width and length aspect ratio may be different, for example, 1:5 to 1:2 〇〇 or more. The length 265 of the mask feature selects the size of the device to be fabricated on the surface of the substrate. The width 26 〇 and the spacing 24 遮 of the mask feature may also differ. In some embodiments t, the width 26 is chosen to be small enough to prevent small grains from nucleating in the molten region, but large enough to maximize the lateral crystal growth of each laser pulse. For example, the mask features have a length 265 of about 25 to ΙΟΟΟμιη and a width 260 of about 2 to 5 μm, which can be multiplied by any reduction factor present in the subsequent projection light, for example, by a factor of 4 to 6. During operation, the platform continues to move the film in the -Χ direction, so that the long axis of the slit of the second mask is parallel to the scanning direction. As the film moves, the laser produces pulses at a characteristic frequency (e.g., 30 GHz) that is masked and shaped. The film velocity (e.g., plateau, degree) is chosen such that as it moves, the beams within subsequent laser pulses overlap. 201123269 Figure 2B-2D illustrates a single-shot SLS process using a mask of Figure 2A to focus on the film area, which shows a second set of dual array slits 210 (right) and a second when scanning the film toward the _χ direction The amount of illumination overlap between a set of dual array slits 2 1 5 (left). In this example, the width 260 of the mask slit 2 (7) is about 5 μm and the spacing 240 is about 2 μm. During the first pulse, the membrane area is illuminated with a first laser pulse. As shown in Figure 2, this region is illuminated by a first set of beams from a second array 21 of masks, and the laser pulses fuse the regions 211, 212, 213 on the sample, wherein the width of the melt region 214 is approximately 5 μπι, the spacing 217 is about 2 μιη, which can be multiplied by any reduction factor existing in the subsequent projection light, for example, by 4 to 6 times. As shown in Fig. 2C, the first laser-induced irradiation regions 211, 212, and 213 are crystallized from the melting boundary 216 to the melting region, so that polycrystalline stone is formed in the irradiation region. The film continues to move in the X direction to fuse the remaining amorphous regions 223, 225, 227, 229 with a second illumination caused by the second set of beam illumination regions of the first array 2丨5 of the mask (Fig. 2C ) extends to the new crystal [domain 221 and the initial seed region 224 to be melted. As shown in Fig. 2D, when the molten region is crystallized, the crystal structure constituting the central portion 228 grows outward, thereby forming a uniform long-grain polycrystalline germanium region. In addition, FIG. 2D illustrates four crystal columns 231, 232, 233, and 234 which are separated from each other by the elongated grain boundaries 235, 236, 237, and 238. The long grain boundaries 235, 236, 237, and 238 correspond to the respective melting regions. center of. There are a plurality of substantially parallel κ to growth crystals 239, 241, 242, 243, 244 in the crystal column. Figure 3 shows an example of film illumination with two subsequent laser pulses

S S 15 201123269 Irradiation. As described above, during cooling, the beam illuminates and illuminates a specific column of individual illumination regions 380, and the crystallization of this region will grow from the edge of the region to the middle of the region. Therefore, in the central region 350 of the illumination region, the beam edge is aligned with the X direction (parallel scanning), and the crystal grains extend substantially in the y direction (vertical scanning). The film includes a first group of crystalline regions 345, and the film moves toward the _χ direction. And when scanning in the +x direction, it has formed a first pulse of the first group of beams (corresponding to the slit 215) by the second mask and a second group of beams 340 formed by the second mask (also corresponding to the narrow The second pulse of the slit 21 5) is irradiated. When the sample is scanned, the end portion of the second crystallization 'region 34 产生 of the second laser pulse 370 partially overlaps the front end portion of the first crystallization region 345 of the first laser 345. The crystallization portion of the second set of crystalline regions 34A, also produced by the second laser pulse, overlaps the edge of the first set of crystalline regions 345 to fill the spaces between the regions of the first set of crystalline regions (4). When the film is scanned in the X direction, the entire surface of the film will crystallize. Since the beam is very long, many crystalline regions have grains oriented in the 丫 direction. In contrast, in the front end and the end regions 36 〇, 37 〇 _, part of the crystal grows from the end of the region and substantially in the χ direction (parallel_extends, and the other grows in the oblique scanning direction. These regions are known as "edge regions". Here, the edge of the pupil which is regenerated by the melted portion causes the grain to grow laterally and obliquely from the edge, and it may form a processed product because it deviates from the lateral growth direction of the preform. According to the above method of continuous lateral crystallization, the entire region is only It can be crystallized by using a two-shot pulse. This method is hereinafter referred to as "secondary irradiation". The filming means that only two laser pulses (irradiation) are required to complete the crystallization. The remaining details of the second shot 16 201123269 can be found in the name "Methods for Producing Uniform Large-Grained and Grain Boundary Location Manipulated Polycrystalline Thin Film Semiconductors Using Sequential Lateral Solidification" j US Patent "Method for Producing Uniform Large-Grained and Grain Boundary Location Manipulated Polycrystalline Thin Film Semiconductors Using Sequential Lateral Solidification" Certificate No. 6,555,449, the entire text of which is hereby incorporated by reference. The SLS process can be used to crystallize the tantalum film used to fabricate small-diameter active array displays (eg, for mobile applications), such as glass panels of approximately 730 mm x 92 0 mm. Manufacturing large-diameter active array displays (eg as a monitor or τν application) need to deal with large panels, for example up to 2200mmx25〇0mm, or even larger. The obstacle to the development of large panel manufacturing tools lies in the linear platform for moving panels: the precision required by traditional secondary illumination sls process It is not easy to operate such a large platform. The following describes some of the problems encountered in the above SLS using an inaccurate platform. In particular, it describes the influence of platform shaking. Figure 4A-4E depicts the limitations related to the secondary illumination SLS process. And the problem. Fig. 4A illustrates a typical mask pattern for a secondary illumination process to generate a beam. The mask 4 for the secondary illumination SLS process includes a double column slit array 402, 4〇4, They are offset from each other and correspond to the first mask. Although the slits 4〇2, 4〇4 are shown to have triangular bevels, the slits may have other shapes. For example, the slits have trapezoidal bevels. Or rounded edges as shown in Figures 2A and 3A, rectangular slits may also be used. Other details of beam and gap width and other slit shape or edge shape may be used. See 2011 WO 129/029546 and US Patent Certificate. No. 6,908,835 'the entire disclosure of which is incorporated herein by reference. FIG. 4B shows a plurality of paintings including a thin film transistor (TFT) or a circuit 420 and an electrode 43 以 on a secondary irradiation SLS process film 41. 415. As previously mentioned, this is a single scan SLS process in which each laser pulse is patterned into a beam array' its long (four) quasi-parallel scan direction. The light beam pulse forms a plurality of crystalline regions including a first crystalline region 44A and a second crystalline region 450. The illustrated crystalline regions 440, 450 are approximately 25 awake in length and approximately wide in width. The "pixel spacing" (the distance from the pixel center to the middle) depends on the diameter of the matrix and the number of nodes in the matrix (where the matrix corresponds to the back of the active matrix of the LCD or QLED display H, and the node corresponds to the individual elements on the back of the active matrix), And the size can be as large as 6 〇〇μΠ1 or more for large arrays (such as large TVs). The second crystalline region 450 is shown to overlap the first region 44A by about 5 G%. The line 46G indicates the scanning direction (which is the pulse scanning direction), and the nonlinearity indicates the effect of the platform shaking (y direction) during scanning, which will result in poor pulse overlap. FIG. 4C illustrates the use of the foregoing method and the 帛4A mask pattern for two-person...SLS scanning 1 -th laser irradiation to correspond to the area of the case and (4) the partial film 'which is represented as the 4th C region 460 (; K is the first-thirty (fourth) domain. The second illumination illuminates and melts a portion of the film in the S region of the corresponding region 450, which is shown as the 4C-th image region 470 (1 line) (ie, the second melting region). Each (4) zone cools and forms a crystalline zone that is too biased, 470. As shown in Fig. 4C, the crystallization regions 46A and (4) include a plurality of regions 461, 471, etc., which respectively correspond to beams generated by the mask, and the branches 18 201123269 have unexposed regions between the plurality of regions 461 and 47 1 . Each of the melted regions is cooled and crystallized into a region 461 before the next laser beam illuminates the surface of the film and forms a fused region of the crystalline region 471. Fig. 4C also shows the overlapping portion 48 of the first crystal region 460 and the second crystal region 470. For example, overlapping portion 480 includes overlapping portions of regions 461a and 471a. Thus, region 480 can be fully crystallized by overlap and different illumination, which corresponds to the right side of region 461 and the left side of region 471, and as described in Figure 2-3, corresponds to the extension of the lateral grain of region 48. The shaking of the platform causes a laser pulse misalignment between subsequent laser pulses, as shown by the misalignment of the area 480 of Figure 4C. Due to the shaking of the platform, the first crystal column from the illumination region 461 of the first laser pulse is not precisely aligned with the first crystal column from the illumination region 471 of the second laser pulse. Misalignment results in an asymmetric overlap of the illuminated areas during the second laser pulse. Therefore, the first crystal column from the irradiation region 471 of the second pulse is shifted in the direction of the arrow 465 by a distance from the first crystal column of the irradiation region 461 of the first laser pulse (Fig. 4D). Laser pulse misalignment results in a long grain boundary with uneven spacing in the final product. The long grain boundary is the midline formed by the convergence of the two lateral growth crystal front ends. Fig. 4e is a schematic view showing the position of the long crystal boundary of the region 480 after the secondary irradiation of the SLS. It depicts the midline of the long grain boundaries 490', 491, 492, 493 of the final product. As shown in Fig. 4E, the center line is unevenly spaced. Figure 4e further depicts four crystalline regions 49〇, 491, 492, 493 separated by elongated boundaries 49〇, 491 ', 492', 493' and including laterally extending grains at region 49〇 490A, 490B, 490C, etc. The wire or the growth boundary 49〇, 491, 19 19 201123269 492', 493' forms an electron flow barrier and reduces the electron mobility in the resulting tft. The decrease in electron mobility is more related to the precise position of the long crystal boundaries in the channel region of the TFT and its source region and the poleless region. The long grain boundaries are preferably evenly spaced to provide a more uniform material. As shown in Fig. 4E, the crystalline regions are unevenly spaced; the regions 491 are wider than the regions 490. In the middle and the back, the sentence is as _ l deep + 叼 相 phase ® is uneven in the crystal column caused by the platform shake during one irradiation process, which not only affects the uniformity of the material, but also limits the feasible beam width and the lower limit of the spacing. That is, unevenness results in small beam widths and spacings that are not feasible. Although it may result in low performance, sometimes short crystal grains are still used to obtain a more uniform thin film transistor (TFTX, for example, a small crystal grain allows a more efficient average effect of crystal grains located in/near the channel region of the TFT). It is especially important for active array organic light-emitting devices. In addition, the occluded grains produced by grains that are not fully extended by the width of the wide column will result in poor device performance. Another topic of the secondary illumination SLS process is distortion. The lens used for the projection light has aberrations such as astigmatism which causes beam distortion. In particular, the beam domain of the crystalline film away from the center is changed to be conspicuous. Figure 4F depicts beam distortion not formed using the dual array mask of Figure 4A. For example, beam 1200 gradually changes to the lower right corner of Figure 4F. In the secondary irradiation SLS, as shown in Fig. 4G, the first pulse 121A and the second pulse 122 are overlapped by about 5% in the secondary irradiation region. The local distortion between overlapping regions of the secondary illumination region may vary. For example, if the lower portion of the second array (right side) of the beam U00 is skewed due to distortion, the first beam array of the first laser pulse 124〇 and the first beam array of the second laser pulse 123〇 (left)

The overlap between [S 20 201123269 will result in uneven centerline spacing of the resulting secondary illuminating material. As shown in Fig. 4H, the line spacing among the beams is not uniform along the vertical scanning direction. For example, the centerline spacing at the top of the scan is fairly equal, and the midline spacing at the bottom of the scan is not. Therefore, the microstructure of the lower portion is similar to the microstructure of Figure 4E. Port Non-Periodic Pulse SLS The non-periodic pulse SLS provides a method for the crystallization process to more robustly overcome problems such as poor beam weight due to platform shake and/or image distortion during subsequent illumination. The system uses non-periodic laser pulses, real-time non-equidistant pulses. In the embodiment, the system utilizes coordinated trigger pulses from a plurality of laser sources (also can be used with multiple laser cavities (such as tubes) A single laser source produces a non-periodic laser pulse, which in turn produces a series of closely spaced time-domain pulses. A plurality of laser sources can be configured as a single laser system. The laser system is a computer control system that uses computer control technology and one or more laser chambers to generate one or more laser beams. Each laser beam corresponds to a laser source. Each of the laser beams can be generated by a laser cavity contained in an independent laser or a lightning system. Figure 5 shows an example gallery of non-periodic laser pulses. The y-axis represents the pulse intensity and the X-axis represents the time. Dimension 5A plots the non-laser periodic rush rate, which can be used to transmit the SLS process. The laser repeats a laser pulse pattern that is evenly spaced in the time domain. The periodic pulse example, the first in the first, and the first in the eighth, 5〇〇 are excited in the time close to the first pulse 5. Next, the third pulse balance 520 is excited at a time interval different from the first pulse; 21 201123269 510 and the second pulse 500. Figure 5C shows the actual laser power (energy density) of two lasers: the example. Such a photographic film will experience non-periodic pulse intensity and uneven illumination energy. Since the time between the first pulse 510 and the second pulse 5〇〇 is short, the areas irradiated by the first pulse 51〇 and the second pulse 5〇〇 are more overlapped as in the case of the 7B-7B. In addition, each laser can generate pulses at a fixed repetition rate. The delay range between the first pulse 510 and the second pulse 5 小于 is less than half of the time interval between the first pulse 5 1 0 and the third pulse 52 。. In some embodiments, the time interval between the first pulse 510 and the second pulse is less than 1/1 〇 of the time interval of the first pulse 510 and the third pulse 52 〇, or less than ι/ι 2 or less than 1/100. The delay between the first pulse 510 and the second pulse 5 可 can range from about 3 microseconds to about! Milliseconds, about 5 microseconds to about 5 microseconds, preferably about 8 microseconds to about 1 〇 〇 microseconds. For example, the delay is as short as a few microseconds (eg, at a platform speed of 4 〇cm/s and a displacement of 3.5 μΐη, the timing is about 8 75 microseconds. If the platform speed is as high as 6 〇cm/s, the timing is about 5 83 microseconds. In the n-th irradiation process, that is, more than two laser irradiation processes in a specific area (such as 3, 4, 5 or 11 irradiation specific areas), the amount of overlap is large. The n-th exposure SLS process is described in U.S. Patent Application Serial No. 1 1/372,161, the entire disclosure of which is incorporated herein by reference in its entirety in its entirety in the the the 1 〇 micron/sec. The film is laterally crystallized in less than about 5 microseconds (μ8) when a 6 micron wide region is melted with a pulse of about 0.3 microseconds in full width at half maximum (FWHM).

f S 22 201123269 In some examples, the displacement exceeds 3.5 μm. Therefore, the delay can be from ten microseconds to 50 microseconds, or even more than one microsecond, and possibly hundreds of microseconds. The upper limit can be approximated, but not equal to 12 inches combined with two 6-inch lasers. The repetition rate: 833 microseconds. For example, for an overlap of 7〇%, the delay is 500 microseconds. However, if two 3 〇〇Ηζ lasers are used, the delay is ^ seconds. Tools having multiple laser cavities (e.g., tubes) have been previously described that increase pulse energy by simultaneously triggering and subsequently combining multiple pulses, and (2) prolonging pulse duration by delaying the triggering of different tubes and subsequent binding of t Time, as described in U.S. Patent No. 7,364,952, the entire disclosure of which is incorporated herein by reference. In other words, the pulses can be combined to provide a modified single melting and crystallization cycle. The difference in non-periodic pulse SLS is that it is a pulse that utilizes different lasers in the individual melt 7 crystallization cycle. However, since the pulse time domain is close enough, the platform still effectively overlaps when traveling at high speed. Figure 5 depicts not a non-periodic pulse pattern, which uses two closely spaced laser pulses A % "laser pulses; however, more closely spaced pulses can be used, such as 3 5 from, which corresponds to 3_5 thunder Shoot or laser cavity. In this embodiment, 'if more closely spaced pulses from different lasers are used, such as laser beams from two different laser energy sources or different laser sources, the target region Correspondingly, the illuminating region has an extended crystallization range. For example, the n pulses from a laser source are closely spaced such that a single region will undergo n illuminations after a single scan. In a secondary illumination SLS, the beams may have a similar width' but the spacing may be increased to accommodate more illuminations. ' 23 201123269 The amount of overlap between the crystalline regions (corresponding to individual melting regions) can be greater than 5% (or 1 χ lateral growth length) 'The crystals thus formed will be more than the secondary irradiation process (the grain length is limited by the pulse train) The number of pulses) the resulting grain length. Long grain materials are beneficial for high performance TFTs. The two consecutive pulses of the pulse train do not need to have the same energy density. For example, if the film still has heat due to the first pulse, the second pulse can have a lower energy density. Similarly, high energy densities can be used to compensate for changes in optical properties caused by the first pulse (amorphous absorption is slightly better than crystallization). Considering the above two effects and other factors, the energy density of the second pulse can be appropriately selected. As shown in Figure 5C, the first laser pulse and the second laser pulse have different energy densities. The system used for the non-periodic pulse SLS performs a non-periodic pulse SLSm using multiple laser sources, such as a dual laser source. The sixth ride shows a system that uses a dual laser source to commit the crime. Figure 6 is similar to the first! The Figure 'has a second laser, except for Figure 6, and a computing configuration or computer system 600' for controlling two laser excitations and platform movements. Computer system 600 provides computer readable media and computer readable fingers to control the position of the platform and to activate laser pulses. The system also includes a plurality of projection lenses for simultaneously scanning a plurality of segments of the film. A system capable of simultaneously scanning a plurality of sections of a film is described in the "System and Method for Pr〇eessing Thin FUms" = National Patent Certificate No. 7,364,952' However, the system and method are to use a dual laser source 'but also a laser. I ' J of the non-periodic pulse S] LS, his method is included in the burst mode 201123269 and / or with the beam interception In addition, the high-frequency laser is operated in a mask-like beam-forming state. The second embodiment allows the system to interfere with the basic assembly to perform functions such as function. Non-periodic laser pulse pattern with repetition rate Laser strikes 1 offset excitation multiples see the use of a single laser to form a non-periodic laser pulse pattern of the modified modification trigger specific repetition rate & ''efficiency difference. In the technology' 士 _ _ sheep The mechanism of the laser to produce a sequence of non-periodic pulses alternating between short and long intervals between successive pulses. A laser (such as an excimer laser) has a maximum output power that increases with repetition rate until the subsequent power is reached. The specific optimum pulse rate for the drop. In other words, the maximum energy that the pulse can have is rapidly reduced when the optimum pulse rate is exceeded. Therefore, for a specific laser with a specific maximum pulse energy, the time interval for shortening the two consecutive pulses is reduced. Pulse energy, especially after a short time interval. In another technique that utilizes a single laser to form a non-periodic laser pulse pattern, the non-periodic pulse pattern is obtained from a single laser at high power/pulse rate Operating in mode, such as a repetition rate of several kilohertz to lG kilohertz, to provide downtime between sequences (eg, fast burst continuous laser pulses). Example laser systems employing the methods and systems include high Frequency lasers such as those developed by cymer (located in San Diego) and used for laser crystallization tools from TCZPte. Ltd. (in Singapore) and diode-excited solid-state lasers, such as from JEN0PTIK Laser , 0ptik,

Systeme GmbH and for laser crystallization tools from Innovavent GmbH. However, compared to lasers with high pulse energy, for example, taken from

i S I 25 201123269

Lasers from Coherent InC. (Santa Clara, Calif.) have low pulse energy and produce smaller pulse sizes. The film 199 can be an amorphous or polycrystalline semiconductor film, such as a stone film. The membrane can be a continuous membrane or a discontinuous membrane. For example, if the film is a discontinuous film, it may be a lithographic patterned film or a selectively deposited film. If the film is a selectively deposited film, it may be a chemical vapor deposited, liquid-treated film such as ink-jet printed ruthenium-based ink.

The full-area non-periodic pulse SLS diagrams 7A and 7B illustrate a non-periodic pulse SLS process using a vertical mask 7〇〇 (7th 8th). The vertical mask 7'' includes a slit array 71G' which is vertically positioned (e.g., aligned in the vertical scanning direction) and has a beveled edge selectively. The slit 710 transfers and shapes the laser beam to produce a plurality of beams of similar shape. The other part of the cover (non-slit) is opaque. It should be understood that the illustrated mask is merely illustrative, and that the size and aspect ratio of the slit and the number of slits can be greatly varied and are related to the processing speed of the crucible, the energy density of the film of the (ir) illumination region, and the available pulse energy. Generally, the aspect ratio of a particular slit width to length can be different, such as 1:5 to 1:2 〇〇 and Μ. Two or more. In other embodiments, the mask is opaque when the background is a transparent "center" point. Others of the Dot Matrix Mask: Sections of Cocoa are described in U.S. Patent No. 7,645,337, the disclosure of which is incorporated herein by reference. 〃 As described in the previous secondary illumination SLS, Figure 7B depicts an example membrane that has been illuminated with two sets of cone laser pulses, where the first set of double laser pulses are dense: now, experienced delay, followed by a second set of double lasers Pulses also appear intensively. The plow 26 201123269 includes at least four illumination steps 'where two illumination steps correspond to pulses of autonomous lasers, and the second illumination step corresponds to pulses from secondary lasers. These steps are as follows: When the film is moved in the -X direction and scanned in the +x direction, '(1) the first shot corresponds to the main laser and the seventh group is masked to form the first set of beams (dashed line). The first pulse is irradiated with a second illumination of (1) (7) corresponding to the region 712 illuminated by the first pulse from the secondary laser and formed by the first group of beams (solid lines); The third illumination 'corresponds to the second pulse of the third laser beam (the dotted line of the gray area) from the main laser and is masked by the seventh person, and (4) the fourth time The illumination corresponds to a region 714 illuminated by a second pulse from a secondary laser and masked by a solid shape (solid line of the gray region) of Figure 7A. A first secondary illumination crystallization region 715 is created where the first and second illumination regions 711, 712 overlap. The third and fourth irradiation regions 713 7 1 4 generate a second secondary irradiation crystallization region 7 16 . The overlap of the first and second crystalline regions 711, 712 and the third and fourth crystalline regions 713, 714 is greater than about 5% when scanning the sample (preferably at a fixed platform speed). Preferably, the first and second crystalline regions ^, ? And the amount of overlap with the second and fourth crystalline regions 713, 714 is greater than about 7%, greater than about 90%, greater than about 95%, or greater than about 99%. The first irradiation of the corresponding zone melts the thickness of the entire region; the molten region then rapidly crystallizes laterally from the solid edge into a laterally crystalline region. The second illumination produced by the first-secondary laser pulse spans the "Oxidation region" between the individual beam regions of the first set of beams and overlaps the first crystalline region 711. Upon cooling, the crystals of the first region grow from the edge of the second molten region to the grains extending laterally in the direction of the lateral direction 27 201123269 (parallel scanning direction). The amount of overlap can be from greater than 5% to about 99%' and the amount of overlap is selected to crystallize the entire region with two laser pulses. The region of the film completely crystallized in this manner is referred to as "secondary irradiation crystallization region". In this example, the irradiation of the first crystal region 7丨丨 and then the irradiation of the second crystal region 712 will form the first secondary irradiation crystal region 715. Next, the irradiation of the third crystal region 713 and the fourth crystal region will form a second secondary irradiation crystal region 716. If there are more than two laser pulses in the pulse train, the amount of overlap is selected such that the entire area is the maximum number of overlaps between the first secondary illumination crystallization region 715 and the second secondary illumination crystallization region 716 in the number of pulses of the pulse train. The amount is such that the first beam of the second pulse is exactly between the first and second beams of the first pulse. The maximum amount of overlap corresponds to the minimum displacement of the half-beam spacing of the vertically aligned beam. If the beam is tilted perpendicular to the alignment (as described above), that is, it is not oriented in the vertical scanning direction, the minimum displacement is - half divided by the beam spacing of the cosine of the inclination. In the n-th exposure process (as described above), the first beam of the second pulse is positioned close to the center line of the first beam of the first pulse, with a larger amount of overlap. The first and second secondary illumination crystallization regions 715, 716 are narrower if there is less overlap between the second pulses of the first pulse disk. In the lesser folds, there will be "wings" adjacent to the first and second secondary illuminating regions 715, 716, which cause the "wings" to be illuminated only by the single-non-overlapping beams. Figure 7C illustrates an alternative overlap mode in which the second pulse ιιι〇 (solid line) is positioned as 1 > 5 times the beam spacing of the first pulse _ (dashed line). The overlap between the first pulse (corresponding to the main laser) and the second pulse (corresponding to the secondary laser) (corresponding to 28 201123269 one-person illumination area) may be about 7〇% to about 99% ^ as shown in Figure 7C Less formation of a smaller secondary illumination crystallization area and a long delay between pulses is beneficial to sufficiently cool the film after the first pulse and before the second pulse. The small overlap amount may be adopted separately, or as described above, in combination with adjusting the second pulse of this 3: density. In addition, the overlap is less conducive to reducing the unevenness of the energy density of the beam. As a process that relies on complete melting of the membrane, SLS is quite immune to changes in the energy density of the 纟-type between the pulses, or between the segments of the pulse. The change in energy density causes a slight change in the width of the region illuminated by a single beam. In the secondary irradiation process, a change in energy density causes a slight change in the amount of overlap between the molten regions, thereby changing the microstructure formed. Preferably, part of the film is irradiated with a low energy density of one pulse, and is not irradiated by another pulse. Example #, if a small section of the beam has a low energy density due to the optical system, it is preferable to increase the displacement between the two pulses so that part of the film is not irradiated twice by the low energy density section of the beam. The operation of the flattening chamber continues to move the film in the X direction to produce the pulse scanning direction indicated by arrow 720 of Figure 7B, such that the long axis of the slit of the 7a mask is perpendicular to the vertical scanning direction. As the film moves, the laser produces pulses at a specific frequency (eg, 300 Hz) that is masked and shaped. The membrane velocity and the excitation offset of the two laser laser pulses are selected to cause subsequent laser pulses to illuminate the overlapping regions 711, 712 as the platform moves. The film velocity and the repetition rate (frequency) of the first and second laser pulses determine the position of the primary illumination crystallization region on the subsequently formed film. In one or more of the actual [Si 29 201123269 examples, the first and the first illuminating crystallization regions 715, 716 are also overlapped at the region 715, so that when the film is scanned in the x direction, the entire film surface will

crystallization. If the regions 711, 712 only shift the half-width of the beam spacing (as shown in Figure 7B), the vertical verticals between the regions 715, 71fi 16 will be as small as the overlap between the beams, which is horizontal in the secondary illumination SLS. The length of growth is up to 】 times. The amount of overlap between the regions m, 716 can be reduced to the amount of beam overlap between the rightmost side of the region 712 and the leftmost region of the region 713. The amount of overlap between the first and second secondary illumination crystallization regions may range from about μ 5 μβι to about 邛 claw. As described above, with the two independent lasers, the amount of overlap between the first and the = regions 7H, 712 and the third and fourth regions 713 714 of Fig. 7B can be increased. The main laser excites the pulse and crystallizes the first and third regions, 7". The secondary laser excites the pulse to crystallize the second and fourth regions Chuan, 714. The pulse excitation is controlled, for example, by a computer. At the fixed platform speed of Xiaoding, the degree of overlap between the first and second regions 7u, 7i2 caused by the use of two lasers is, for example, greater than the overlap with the current laser frequency - the degree of overlap caused by the laser is large. It is important to use multiple laser sources, but to generate non-periodic f-pulses. As noted above, lasers with high laser repetition rates do exist and are operable to provide downtime between fast = laser pulses. Develop laser power and high frequency yields and increase the commercial appeal of this approach. Tilt Scan Using Non-Periodic Pulse SLS In some implementations, when the τρτ array is fabricated on the film, it is beneficial for the crystal to define the direction of the slanted TFT channel. If the parallel direction of the array and / or the edge of the active matrix device or film, then diagonal 30 201123269

Beams can be used, for example, to perform tilt processing (see "Polysilicon TFT Uniformity by Microstructure Misalignment (p〇iycrystalline TFT)

Uniformity Through Microstructure Mis-Alignment, U.S. Patent No. 7,160,763, the entire disclosure of which is incorporated herein by reference. Figures 7D and 7E illustrate the y-axis tilt of the beam relative to the film. Fig. 7D shows that the tilt angle is smaller than that of Fig. 7E' as shown in Fig. 7E, so that there is a large overlap between the first illumination and the second illumination. The angle of inclination can range from 0 degrees to about 90 degrees. Assuming that the beam is at a specific tilt angle (such as 〇1 angle relative to the vertical y direction (ie, the direction of the vertical scanning direction), a specific time delay between successive pulses can be calculated to provide a moving distance equal to d=0*5x (X/). Cosc〇, where λ is the beam spacing. With a slope of 75 degrees and a beamwidth and spacing of 55/15 arrays (ie, as =7), as shown in Figure 7D, the moving distance is about 13 5 哗. At a scanning speed of lOcm/s, there is a 网35 network delay between successive pulses. A tilt of 45 纟 can make the TFTs aligned with the vertical Linping display or the edge of the panel have the same TFT uniformity. The double secondary illumination process is performed, for example. It is also possible to adopt a tilting of 45 degrees and then a second irradiation of 135 degrees at the first secondary illumination. That is, when the display design is rotated by 9 degrees relative to the previous assumption, the tilt angle may also be More than 45 degrees to approximately 9G degrees (eg close to vertical). Although the tilt angle affects the overlap between the areas of continuous column pulse processing (the smaller the angle, the larger the amount of overlap), but in all cases the 'interval between scan and scan Still remain - Beamwidth. The slanted beam can be used for holistic and selective crystallization in 201123269. This will be explained later. Once the film has been completely scanned in the X direction, the shadow beam can be shifted in the y direction to scan the rest of the film. As shown in Fig. 7B, in addition to the overlap region 745 between the secondary illumination regions 715, 716, an overlap region 75 is also created between the first scan 730 and the second scan 74. Therefore, the beam edge is located in the overlap region. Then, as with the overlapping illumination of the conventional single-shot and secondary-irradiation SLS shown in Figure 4, it is necessary to properly overlap the beam edges to ensure the continuity of the microstructure. As mentioned above, this involves using beam edge processing techniques to ensure The long axis of the grain is oriented to the substantially vertical beam midline. However, in horizontal alignment, in the case of a non-slope beam, when the next pulse is generated in the overlap region 745, one end of the beam naturally overlaps its opposite end. The end of the beam needs to be 4 according to the beam length and inclination angle to the opposite end of the other beam. Therefore, the timing of the pulse needs to accurately overlap the center line of the beam edge. The degree can be optimized to minimize the amount of overlap of the beam edges. For non-horizontal beam alignment, the beam edges are still present at the top and bottom of the patterned beam as shown in the overlap region. To ensure scan to scan The inter-microstructural continuity 'that ensures that the different regions formed by the full edge scan' also need to overlap the edge regions appropriately, even if the beam midline overlaps, and the beam dip and length are selected to produce π and the smallest overlap from the house. Accurately stitching in the overlap region 750, the mirror is controlled to control the laser pulse. The pulse position variation in the X direction is generally from the inaccuracy of the pulse timing and the change in the platform speed, for example

r j is sinusoidal. The weight A between pulses is affected by positional changes. The inaccuracy of the pulse-time bed AT standard is usually much less. 32 201123269 Bounce caused by the inaccuracy of the corresponding pulse-triggered electronic device. The impact level can be several nanoseconds or more. The jitter causes the pulse position on the film to shift very little' and is negligible for this application. Taking the pulse delay 丨0ns as an example, when the platform speed is 20cm/s, the trigger only causes the sample to shift by 2nm. The change in velocity causes the pulse positional shift on the film to be small, and is similar to the gradual shift in the case of shaking. Therefore, closely locating the two pulses will help to reduce the effect of variations on the uniformity of the microstructure. Beam Distortion The method and system of the present invention also mitigates the effects of beam distortion. In the non-periodic pulse SLS system and method, since the amount of overlap between the first pulse and the second pulse in the secondary irradiation region is greater than about 7〇%, between the first pulse and the second pulse of the secondary irradiation region The overlapping portion is a more intersecting beam path segment, so the degree of distortion is more similar. Therefore, the final crucible film is obviously unaffected by distortion. The 7F_H diagram shows the same distortion as the beamforming of the 4f_h diagram. Further, the wave body in the lower right corner of Fig. 7F has been turned on/帛7G and 7H to show the non-periodic pulse SLS |, which is used, for example, in the 7B picture area 711, 712. Note that the 4F_ does not vertically align the mask, and the @帛7F diagram shows the horizontal alignment mask. [In the example of the 4F-H diagram and the 7F_H diagram, there is distortion in the y and y directions. The direct alignment beam is affected in the same way as a horizontally aligned beam. Measuring the ripple line during the non-periodic pulse SLS process shows that the 7F distortion does not affect the centerline regularity (Fig. 7) and does not affect the grain boundaries. This benefit is due to the close separation of the beam paths between the overlapping portions of the first and second pulses' so that the optical domains become similar. 201123269 The above non-periodic SLS systems and methods can be applied to full-area crystallized films. For example, aperiodic SLS can be used for a large number of closely spaced TFTs on a large area scanning film. Selective region crystallization using non-periodic pulse SLS. In two cases, the 'non-periodic pulse sequence is used to selectively degenerate features, such as active matrix devices (such as displays or sensor arrays). Alizarin TFT or circuit. In the selective region crystallization (in the eighth embodiment, there is no overlap between the first and second secondary illuminating regions, for example, between regions 715, 716 shown in Fig. 7B. For example, 帛8 shows the film 820 There are closely spaced jaws 825 and are scanned in a non-periodic pulse process where there is no overlap between the second and second illumination regions 830 and the second secondary illumination region 840. This process implements the same mask as in Figure 7A. Similar to the embodiment of Figure 7B, the film includes at least four illumination steps to form a primary illumination crystallization zone: corresponding to the first secondary illumination crystalline region 83〇 from the first pulse of the primary and secondary lasers, respectively, and corresponding a second secondary illumination crystallization region 840 from a second pulse of the primary laser and the secondary laser, respectively. The illumination step for generating the secondary illumination crystallization region "Ο, 840 is as follows: when the film is moved in the -X direction, (1) The first illumination corresponds to the area 8 ιι irradiated by the first pulse of the main laser; (2) the second illumination step corresponds to the area 812 illuminated by the first pulse from the secondary laser; ) the third exposure, The region 813 illuminated by the second pulse from the primary laser; and (4) the fourth illumination step, corresponding to the region 814 illuminated by the second pulse from the secondary laser. In one or more embodiments The mask/beam size of the forced SAC is selected to be one or more fully crystallized regions after two pulses 34 201123269 (or η pulses), and each crystal region is large enough to accommodate at least one of the matrix type electronic devices. a node * or a circuit. In conjunction with the seventh embodiment, only the first and second crystalline regions 811, 812 overlap each other, and the third and fourth crystalline regions 813, 814 overlap each other. In this embodiment, There is no overlap between the primary irradiation area 83〇 and the second secondary irradiation area 840. Therefore, the platform supporting the sample can be moved at a high speed to increase the interval between the first and second secondary irradiation areas 83〇, 84〇 to match The periodicity of the matrix type electronic device. Accelerating the platform speed can greatly increase the overall processing yield. For example, in the pixel array of the display, the density of the electronic device is low, for example, the pitch is hundreds of micrometers or more, such as more than 1 Mm or more, so by simply crystallizing these areas, the yield can be greatly increased. Thus for a specific laser pulse rate, the platform can move at a faster rate to achieve a selected area on the fully crystallized film. Periodic pulses such as the example yield values of the system can be found in the "Examples" section of this application. The yield increase of the non-periodic pulse SAc is more competitive, such as the large panel production required for large TV manufacturing, such as the eighth. Panel (~2.2〇x2.5()m2). A single-scan process using non-periodic pulses places non-periodic pulses on the film, where the overlap between pulses in a particular region increases and the region is reduced V 〇 using non-periodic laser pulses and changing the scanning speed for low scanning speeds during processing of special areas, and between specific areas / with fast scanning speeds 'can also achieve non-periodic pulses in a single scan, eg using optics Set up to quickly redirect pulses to specific areas

Γ Γ*· T i .3 i 35 201123269 On, you can also quickly add and slow down. The optical device can include, a beam steering element, a fast mirror or an oscillating mask. The single scan of the sacsls process is closely related to the optical device, so it is better to use a non-periodic pulse system. Moreover, its non-periodic pulse can reduce the disadvantage of platform wobble related errors. Another single-scan SAC process utilizing periodic laser pulses involves splitting each patterned beam into two or more patterned segments, each of which is large enough to crystallize a particular region and at a distance such that multiple segments are simultaneously Overlapping a plurality of special m scans is performed at a speed at which the sample travel distance is equal to an integer multiplied by the pitch at the time of subsequent illumination, such that one segment of the pulse now overlaps with the region of the previous 'interval pulse'-segment processing. By appropriately designing the beam pattern for each segment, the second illumination provides a lateral extension of the crystal for the first illumination growth. Forming a segment by blocking (shadowing) a portion of the beam will result in a large separation between the segments and is therefore a kind of wave f. More specifically, the beam splitting technique can be used to redirect a portion of the beam to the same or a different optical path. The single-scan SACSLS process does not have a tightly overlapped portion. The patterned beam can reduce the effects of beam distortion. Moreover, the fact that it does not have a non-periodic pulse can reduce the jitter error associated with the platform. As described above, selective region crystallization involves crystallizing only characteristic regions such as matrix type electric, set or circuits. The position of the crystallization area needs to be aligned with the node position of the matrix type electronic device or circuit. The sample alignment step can be achieved according to each technology. In one technique, the crystallization system can be used to quickly achieve sample-alignment, which is more capable of locating the sample in a manner that reproducibly positions its other processing steps in the fabrication of the electronic device. - common methods such as when the panel "36 201123269 points or when aligning the mask" is detected before crystallization and used for crystallization. The two sample alignment method is often used in the lithography process to fabricate the different features of the film two. Sub-micron accuracy. The alignment of each side does not need to be as precise as lithography. For example, the sides of the crystallization area can be several micrometers or 10 microns or more larger than a specific area. Another technique is to measure the crystallization area before manufacturing the electronic device. The second is to establish sample alignment. The way to achieve this is to set the area to be set, set, or to detect additional crystallization areas for alignment, such as reference points. quasi. The system can be used to make reference points or alignment masks on the film or substrate for subsequent alignment. The patterned beam can be used to create a well-defined feature 'which can be used for at least the earliest panel alignment in subsequent lithography steps' followed by a micro-reference point. The benefit of complete melting and associated lateral growth is that there are connected protrusions in the vertical long grain boundaries, which can be observed by dark field microscopy. Further, the phenomenon of changing from an amorphous phase to crystallization can be observed by a microscope, which is caused by a change in optical properties. The system for sample alignment can include an automated system for offsetting the reference point and aligning the sample to a known location relative to the reference point. For example, the system can include a computing configuration to control the moving and responsive optical detectors that detect the reference points on the J film. The optical detector is, for example, a charge coupled device (CCD) camera. Figure 9 shows the film 91 处理 processed by the SAC process. In Fig. 9, the halogen 920 of the membrane 910 is horizontally positioned, but in Figures 7 and 8, it is vertically positioned. In Fig. 9, a plurality of secondary irradiation regions 93A, 37, 201123269, 940, 950, and 960 are superposed on the TFT 97A of the halogen 92. Compared to the SLS method, the beam width in the non-periodic pulse SAC SLS is small; it only needs to be like the width-width of the region to be crystallized. Therefore, the excess month b can be used to add a long beam of light. Long beam lengths can be obtained using large diameter projection lenses and/or splitting the beam into individual optical paths', whereby multiple (4) layers of the film are simultaneously crystallized during beam pulse scanning. Increasing the length of the treatment area during a single scan reduces the number of scans required for a fully crystallized film. The scan catch is actually smaller than the traditional SLS, which adds another advantage of being arbitrarily sr. The non-periodic pulse SLS has the advantage of random design scale because of the tightly spaced pulses in the time domain and the more robust deviations such as platform wobble and beam sag. The advantage of using aperiodic pulse SLS to maximize SAC requires optimizing the size of the patterned beam and optimizing the layout of the pixel or circuit. Improving the pixel TFT and circuit design, for example, can reduce the width of the area to be crystallized. As shown in Fig. 9, the optimization involves rotating the sub-tend configuration by 90 degrees and re-arranging the layout of the TFTs and circuits. Taking a 55-inch display with a pixel spacing as an example, the width of the electronic device is at most about 30 μm. Therefore, the film of 660 μm is only 3 μm, which requires crystallization. In addition, the two regions to be crystallized in adjacent crystal columns can be close to each other, so that a single group of light beams can be used to crystallize the entire region, and then a large region is skipped to abut a group of TFT/circuit regions. The display (usually only a single TFT) says that the area to be crystallized is narrower, so further narrowing the beam width and subsequently extending the beam length throughout the wide diameter lens and/or a large number of projection lenses becomes less attractive. 38 201123269 SAC strengthens the crystallization process by selectively crystallizing only specific regions and omitting the membrane regions between them. Similarly, the ability to illuminate selected regions further eliminates the need for precise scanning to scan overlapping beams for fully crystallized regions, eliminating the need for additional beam edges that are edge-triggered. The beam length closely matches the size of the corresponding TFT or circuit to be crystallized. The beam length is selected to contain an integer number of TFTs or circuits. The adjacent pixels of the TFT or the circuit leave some space for crystallization. This space is for example a node for the long electrodes to connect to the active matrix. In addition, the beam can be subdivided into a plurality of sets of beams along its length, each of which corresponds to the size of the pixel TFT or circuit. Figure 1A discloses a mask 1010 for sac crystallization. The end of the beam does not need to overlap, so the 10A mask has a rectangular edge. The mask can be used with the film lG2〇, as shown in FIG. 10B, which contains the spacers 1030 each having a TFT 1〇4〇, and the slit size of the towel is selected to be slightly larger than the purchased size, so scan Only these areas will crystallize. The thermal load on the system light member, especially the projection lens, can be reduced by merely placing the slit on the corresponding film to form the TFT_ or the mask of the circuit. As shown in Fig. 6, the projection light member 195 is located downstream of the mask 17'. Therefore, if the mask blocks more light, the projection lens will receive less light, thus reducing overheating. In SAC, the beam pulse can be narrowed, and in some embodiments, the amount of overlap between the first and second pulses is less than 50%' and the next pulse time is still relatively long. The time interval between pulses is still very short' to maintain the advantage of non-periodic scanning of SLS. The overlap between some of the first and second pulses is limited, 39 201123269. In the sac embodiment where the secondary illumination of the crystalline region is not heavier, the wing shape of any of the regions (4) overlaps with the airfoil of the adjacent secondary illumination crystalline region. EXAMPLES The non-periodic pulse sls, which is crystallized by the selective region as described above, has a high yield. Suppose that a 1.2 kW laser with two tubes each illuminated with 6_z (lj/pulse) is used, and two 5 〇mm field projection lenses are used to produce a two-person 5 cm x 〇.3 mm pulse size, which can be 22 times. Scanning treatments with a 1200 micron spacing and a display made by the 8th generation panel, for a total of 22x25〇cm/(60〇HZx66(^m) + 2 b or about 16〇 seconds, each round trip time is i seconds The resulting scanning speed is approximately 4 〇cm/s. If 30 seconds of loading and unloading time are taken, the processing yield is 3,000 hours x (1/160 + 3 〇) seconds, or about 13 儿Panel/month. Assume that the normal running time of the equipment is 85%, then the output is U6k panels/month. Using a 2kw laser made of two tubes of different phases (ie combined into a periodic 12〇〇Hz pulse) Sequence) and 5cmX〇6mm pulse size (single 5〇mm field projection lens) for traditional SLS, the platform speed suitable for making the overlap between pulses 1 to 50% is 36cm/s, and the number of scans is doubled (ie 44 times), so the time for processing each panel with the traditional sls exceeds the processing time of the SAC non-periodic pulse SLS instance described above. Twice. While the invention has been described above by way of example, without departing from the spirit and scope of the invention, any skilled person can make various modifications and refinements. For example, it should be understood that the film is advanced in a selected direction. The method can be achieved by keeping the laser beam stationary and moving relative to the laser source. 40 201123269 Example of keeping the film and film fixed and moving the beam [Simplified illustration] The present invention is referred to the drawings It will become clearer and easier, in which Figure 1 shows the system for the continuous lateral crystallization (SLS) process, Figure 2A shows the mask for the SLS process, and Figure 2B-2D shows the SLS process. Figure 3 shows the secondary illumination scan using the secondary illumination process; Figure 4A shows the mask for the SLS process; the pixel array 4B_4E shows the secondary secondary illumination scan; 4F- 4H is a diagram showing the beam distortion formed by the mask of FIG. 4A; FIG. 5A is a diagram showing the relationship between time and pulse energy in the conventional secondary illumination sls process; FIG. 5B is not used according to the embodiment of the present invention for selectivity Advance secondary irradiation SLS system The relationship between the time and the pulse energy; FIG. 5C is a diagram showing the relationship between the time and the pulse energy in the secondary illumination SLS process for selective propulsion according to an embodiment of the invention, wherein the energy of the second pulse is greater than the first pulse 6 is a system for a non-periodic pulse SLS process according to an embodiment of the invention; FIG. 7A is a vertical mask for a non-periodic pulse SLS process according to an embodiment of the invention; 41 201123269

Figure 7B is a diagram showing a secondary illumination scan in a process according to the present invention; < Non-periodic pulse SLS Figure 7C is a diagram showing

^ ^ ^ ^ ^ ^ 1 〗 之 之 之 之 之 替代 替代 替代 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; The edge is inclined; the 7F-7H diagram shows the distortion of the non-periodic pulse SLS process according to the invention; and the 8th figure shows the selectivity of the acupuncture cup according to the present invention. The region crystallizes the non-periodic pulse SLS process; FIG. 9 shows the film treated by the selective region crystallization non-periodic pulse SLS process according to the sinusoidal sinus of the present invention; FIG. 10A a mask for selective area crystallization non-periodic pulse SLS process processing according to an embodiment of the present invention; and FIG. 10B illustrates a selective area crystallization non-periodic pulse SLS process according to an embodiment of the present invention. Component Symbol Description] 110, 110' Laser 120 Delayer 125 Attenuation Board 130, 140, 160 135 Telescope 145 Homogenizer 155 Beam Splitter 165 Lens 170 Mask 195 Light

42 201123269 198 Platform 199 Membrane 210, 215 Slit (Array) 211-214 Area 216 Boundary 217 '240 Pitch 221 Polycrystalline Dream/Region 223-225, 227, 229 Area 228 Section 231-234 Crystal Column 235. 238 Crystal 239 ' 241-244 Crystal 260 Width 265 Length 340 ' 3405 ' 345 , 360 ' 380 Area 365 Grain 370 Grain / Area 400 Mask 402 , 404 Slit (Array ) 410 Film 415 Pixel 420 Circuit 430 Electrode 440 , 450 ' 460, 461, 460, line 480 overlap / area 490 '-493 ' grain boundary 500, 510, 520 pulse 700 mask 711-716, 745, 750 730, 740 scan 820 film 910 film

930, 940, 950, 960 970 TFT 461a, 470 '471, 471a 465 arrow 490-493 area

490A-490C 600 Computer System 710 Slit (Array) Area 720 Arrow 811-814 ' 830 ' 840 825 TFT 920 Alizarin Area 1010 Mask Area Grain Area • Γ 5 τ 么 J· 43 201123269 1020 Membrane 1030 昼素 1040 TFT 1100 > 1110 pulse 1120 area 1200 ' 1300 beam 1210, 1220 ' 1230 , 1240 pulse

44

Claims (1)

201123269 VII. Patent Application Range: 1. A method for processing a film, the method comprising: illuminating a first region of the film with a first pulse and a squirt pulse when advancing a film in a selected direction, The pulsed pulse provides a shaped beam of light and has a fluence sufficient to melt the entire thickness of the film to form a first molten region and a second molten region, respectively, which crystallize laterally upon cooling, wherein cold (four)' The second (four) region is crystallized into - or a plurality of laterally grown crystals, which is an extension of the one or more laterally grown crystals formed by the first molten region; and, with a third laser pulse and a first The four laser pulses illuminate the -second region of the film to provide a shaped beam of light and have a fluence sufficient to melt the entire thickness of the film to form a third melt region and a fourth melt region, respectively. And laterally crystallizing upon cooling, wherein the fourth melting zone crystallizes into one or more transverse directions when cooled: long crystals, which are the one or more transversely grown crystals formed by the third melted region An extension portion; a time between three laser pulses between two laser pulses, wherein the first laser pulse and the first interval are smaller than the first laser pulse and half of the inter-interval interval Range number! The first laser pulse and the first method, wherein a first laser source produces three laser pulses, and a second laser source ί S 45 201123269 generates the second laser pulse and the fourth mine Shoot the pulse. 3. The method of claim 2, wherein the first laser source and the second laser source system produce a pulse at a fixed repetition rate. 4_ The method of claim 1, wherein the film advances in the selected direction. 5. The method of claim 1, wherein the first laser pulse and the second laser pulse each lift, and the captured bundle overlaps in the first region of the film. The third laser pulse and the fourth laser pulse provided by the fourth laser pulse overlap each other in the second region of the β-film, wherein the laser pulses are in the first region of the film The amount of overlap between the blood whistle _ wide /, ° brother - the region contains more than 90% overlap. The method of item 5, wherein the amount of overlap comprises a large amount of 6. If the scope of the patent application is at 95% overlap. 7. The method of claim 5, wherein the overlap is included in 99% overlap. 8. The method of claim 1, wherein the shaped beam is caused by the mine The pulse is guided through a mask. g 46 201123269 9. For the method of claim 1 of the patent scope, a plurality of beams. 10. The method of claim 9 is at an angle to one of the edges of the film. 11 Method as claimed in item 9 of the patent scope Multiple edge processing beams. 12. The method of applying No. 1 of the patent scope contains a little pattern. 13. If the method of applying for the first item of patent scope 5, the first area overlaps. 14. For example, the method of applying for the first paragraph of the patent scope. The second regions of the sea are spaced apart from each other and are positioned by the film according to the method of the first aspect of the patent application. 16. The method of claim 1, wherein the shaping beam in the first region and the second region each comprise 'where the beam is positioned' wherein the beams comprise 'where the shaped beam package' The second region is separated from 'the first region and the unirradiated region. Wherein an edge of the film is contained in the 5th thin film - the electronic device. IS 47 201123269. The method of claim 1, wherein the first region and the second region are selected to form a large crystalline region ♦ sufficient to contain the A circuit 0 of one of the nodes of the matrix type electronic device is as claimed in the patented cage. The method of claim 2, wherein the first laser source and the second laser source are two different lasers. 19. The method of claim 2, wherein the first laser source and the first laser source are two separate laser chambers 20 in a laser system. A time interval between the second pulse and the second pulse is short. The method of claim 1, comprising a fourth pulse, between the three pulses, such that the fourth pulse and the interval are longer than the fourth pulse and the third pulse 2 The film treated by the method. 22. An electronic device comprising a film processed by Yugu J according to the method of claim 1 of the patent application. For example, in the scope of claim 22, the electronic device includes a thin film crystal disposed in each of the first, the & field and the second region of the film. LS 48 201123269 24. A method of processing a film, the method comprising: illuminating a film in a selected direction, the plurality of first beams provided by the plurality of first laser pulses illuminating a plurality of first regions of the film And a plurality of second light beams provided by the plurality of second laser pulses are irradiated throughout the plurality of second regions of the film; and wherein a fluence of each of the first light beams and the second light beams is sufficient to melt The entire thickness of the film of one of the illumination regions, upon cooling, the molten region is then laterally crystallized into one or more laterally grown crystals, and wherein an amount of overlap between the first region and the second region of each group is greater than A first group of the first region and the second region overlap with an illumination of a subsequent set of the first region and the second region. 25. The method of claim 24, wherein, in cooling, a first set of second molten illumination regions are crystallized into one or more laterally grown crystals, which are formed by a first set of first molten regions An extension of one or more laterally grown crystals. 26. The method of claim 24, wherein a primary laser source produces the first laser pulses and a primary laser source produces the second laser pulses. 27. The method of claim 24, wherein the amount of overlap in a region between the first region and the second region and the first region in a set of the first 49 201123269 is greater than 90%. 28. The method of claim 5, wherein in the first group and the second region, an overlap between the first region and the second region is greater than 95%. 29. The method of claim 24, wherein in a set of the first region and the second region, an overlap between the first region and the second region is greater than 99%. 30. The method of claim 24, wherein a first group of the second region has a overlap with the most recent second group of the first region of less than 10%. 3. The method of claim 24, wherein a first group of the second region and a nearest second group of the first region have an overlap of less than 10/〇〇32. The method of claim 24, wherein an overlap between the first group of the second region and the second group of the first region is 〇. 33. The method of claim 24, wherein a first set of the second zone and a second set of the first zone are spaced apart from each other and separated by an unirradiated area of the film. 34. The method of claim 24, wherein the primary laser source and the secondary laser source generate pulses at a fixed repetition rate. 3 5. The method of claim 24, wherein the film continues to advance in a selected direction. 36. The method of claim 35, wherein an edge of the film is positioned at an angle relative to the selected direction. 37. The method of claim 24, wherein the beam comprises a plurality of beams. 38. The method of claim 37, wherein the beams are positioned relative to an edge of the film - an angle. 39. The method of claim 24, wherein the first region and the second region are selected to form a sufficiently large crystalline region sufficient to accommodate a node belonging to a matrix type electronic device. a circuit. 4〇. A system for processing a film using non-periodic laser pulses. The system comprises: 51 201123269 A primary laser source and a primary laser source are used to generate a laser pulse; a laser pulse generating device for shaping a beam; a working surface for fixing a thin plate on the substrate; a platform for moving the film relative to a beam of light, and generating the film on the surface of the film The direction of propagation of the laser beam pulse; and the 'computer' is used to process a platform synchronized laser pulse command such that a first continuation of the film loaded into the mobile platform is provided by a laser pulse from one of the primary sources a first group of a bad buddy, and / or a plurality of shapings, the skin beam, so that a second area of the film is from the sequel and the shop Tian ί «目 a_人源的—the laser Pulse-provided - a second set - or a plurality of shaped beam illuminations, and a third region of the thin raft provided by a laser pulse from the primary source - a third set of one or more shaped beam illuminations , where the processing instruction is used for relative intelligence The (4) pre-beam pulses move the film in the direction of propagation to illuminate the first region, the first region, and the third region, wherein the first region and the second region have a larger amount of overlap An amount of overlap between the first £ field and the third region. 41. The system of claim 4, wherein the device comprises a late time. The system of claim 4, wherein the device comprises a 42. optical control system as claimed in the patent scope. 43. As claimed in the fourth section of the patent application, the system includes a projection lens 52 201123269 for transmitting the laser beam pulses. 44. The system of claim 43, wherein a plurality of projection lenses are provided for generating the laser beam pulses. 45. The system of claim 44, wherein the projection lenses each produce a laser beam to process a portion of the film. 46. The system of claim 40, wherein the amount of overlap between the first region and the second region is greater than 90%. 47. The system of claim 40, wherein the amount of overlap between the first region and the second region is greater than 95%. 48. The system of claim 40, wherein the amount of overlap between the first region and the second region is greater than 99%. 49. The system of claim 40, wherein the amount of overlap between the second region and the third region is less than 1%. 50. The system of claim 40, wherein the amount of overlap between the second region and the third region is less than 1%. 5 1. The system of claim 40, wherein the amount of overlap between the second region and the second region of [S 53 201123269 is 〇. The system of claim 40, wherein the second region and the second region are spaced apart from each other and separated by an unirradiated region of the film. 53. The system of claim 4, wherein the primary laser source and the secondary laser source generate pulses at a fixed repetition rate. 54. The system of claim 4, wherein the film continues to advance in a selected direction relative to the source. 55. The system of claim 4, comprising a device for positioning the film relative to at least one of the built-in reference points. 56. The method of claim 38, wherein an edge of the film is positioned at an angle relative to the selected direction. 57. The method of claim 38, wherein the one or more plastic beam clamps are at an angle relative to an edge of the substrate. 5S. The system of claim 40, wherein the size of the region formed by the amount of overlap between the first region and the second region is selected to form a large crystalline region sufficient to accommodate A circuit belonging to a node of a matrix type electronic device. 54 201123269 59. A method for processing a film using a non-periodic laser pulse, the method comprising: propelling a film toward a selected direction, a first laser pulse from a primary laser source at a time-to-time ^生: The H-th beam, and irradiating the first region of the film with a (4)-shaped beam to form a first melting region, which is laterally crystallized into a first-group crystal region upon cooling; Generating a second shaped beam from a second laser pulse of one or two laser sources, and illuminating the first region of the film with the second shaped beam to form a second melting region, Radially crystallizing into a second set of crystalline regions upon cooling; and at a third time, generating a third shaped beam from a third laser pulse of the primary laser source and illuminating the third shaped beam a second region of the film forming a third melting region, which is laterally crystallized into a third group of crystalline regions upon cooling; wherein a time interval between the first time and the third time exceeds/the time and the second The time interval is twice as long. 60. The method of claim 59, wherein the melting zone formed by the first shaping beam and the second shaping beam are positioned to provide laterally extending crystal growth. 61. The method of claim 59, wherein the first beam, 55 201123269, the second beam, and one of the beams of the first beam; the primary amount is sufficient to melt the entire thickness of the film in a region of the illumination film . 62. The method of claim 59, wherein the film continues to advance in a selected direction. 6-3. The method of claim 57, wherein an edge of the film is at an angle relative to the selected direction. The method of claim 59, wherein the first laser pulse and the second laser pulse respectively provide a beam that overlaps in the first region of the film, wherein the first laser pulse and the first The amount of overlap between the two laser pulses is greater than 90%. 65. The method of claim 62, wherein the amount of overlap between the first laser pulse and the second laser pulse is greater than 95%. 66. The method of claim 62, wherein the amount of overlap between the first laser pulse and the second laser pulse is greater than 99%. 67. The method of claim 59, wherein each of the shaped beams is lightly guided by the laser beam through the mask. For example, in the method of claim 59, each shaped beam in the bean! S 56 68. 201123269 contains a plurality of beams. 69. The method of claim 59, wherein the shaped beam comprises a beam formed by a pattern of masks. 70. The method of claim 59, wherein the first region and the first region are adjacent to each other. The method of claim 59, wherein the first region and the second region are spaced apart from each other and separated by an unirradiated region of the film. The method of claim 59, wherein the first beam, the second beam, and the third beam are positioned at an angle relative to an edge of the film. 73. The method of claim 59, wherein one of the first region and the second region is sized to form a sufficiently large crystalline region sufficient to accommodate a circuit belonging to a matrix type electronic device. 57