201122964 六、發明說明： 特別是相關於一種可提高 本發明另有關一種具有上 【發明所屬之技術領域】 [0001]本發明有關一種光感測裝置， 顯示器開口率之光感測裝置； 述光感測裝置之顯示ϋ。 [0002]201122964 VI. Description of the Invention: In particular, it relates to a method for improving the present invention. The invention relates to a light sensing device for displaying a light transmittance of a light sensing device according to the present invention. The display of the sensing device is ϋ. [0002]
[0003] 〇 【先前技術] 隨著科技、網路、以；s 及通訊的蓬勃發展，電子產品除須 具有科技的新穎性條件外，更尋求與使用者的直接互動 ，以滿足使用者在方便性以及互動性上的需求。因此， 許多觸控式產品與介面因應推出，例如ATM提款機、個人 數位助理（Personal Digital Assistant, PDA)，行 動電話或筆記型電腦。觸控式產品藉著使用者接近或按 壓觸控式面板（touch panel)，進行使用者與電子產品 之間的直接互動，以完成資料的傳輸、存取以及更新， 因此增加輸入上的效率。 • . » -* , r'·- 1 於習知技藝中，觸控面板俦整余於疼晶顯示器（I i qu i d crystal display, LCD)内i，並於液晶顯示器的薄膜電 晶體（thin-film transistor，TFT)陣列架構下内嵌 光感測裝置。當使用者以手指、觸控筆或其他物體接近 或者按壓顯示器面板時，會遮蔽面板内光感測裝置的部 分或全部光源，因此光感測裝置可藉由感測光的變化， 而操取手指、觸控筆或其他物體於觸控面板的影像以及 其座標位置。 [0004]習知技藝並揭露一種光學感測裝置，該光學感測裝置包 括複數個感測畫素電路；每一該感測畫素電路包括一個 098145274 表單編號A0101 第3頁/共22頁 0982077364-0 201122964 [0005] [0006] [0007] [0008] 098145274 光電薄膜電晶體以及複數個讀取薄膜電晶體；其中一讀 取薄膜電晶體係作為重置（reset)之用，因此其閘極須與 一重置信號電性相連，以讀取一第一重置電壓。此外， 為反應感測畫素電路於不同遮光程度的電氣訊號結果， 須另設置一第二重置電壓，並使該第二重置電壓與該第 一重置電壓之間形成一電壓準位差。因該等習知技藝須 在畫素（pixel)單元的既有電路外，另增額外的控制訊號 ，因此電路架構較為複雜。然而，過於複雜的電路架構 將增加薄膜電晶體的佈線難度，並增添成本。 再者，由於光感測的訊號通常相當微弱，若於畫素單元 的原電路架構下，額外增設複雜的控制電路以獲取較強 的訊號，將降低顯示器的開口率（aperture ratio)。 因此，習知内嵌於顯示器之光學感測器在設計時，難以 兼顧光訊號強度與感測裝置的複雜度。 【發明内容】 有鑑於此，本發明之一目的在於提供一種光感測裝置， 其使用畫素單元之原電路架構，無須額外增加其他控制 訊號，因此電路架構簡化、佈局簡單。 本發明之另一目的在於提供一種顯示器，其包括複數個 上述光感測裝置，因該等光感測裝置之電路架構簡單， 因此不致降低該顯示器之開口率。 於本發明之一實施例中，提供一種光感測裝置，其包括 一光感測元件、一儲存電容、一第一薄膜電晶體以及一 第二薄膜電晶體。該光感測元件可將一節點的電壓重置 為一第一電壓準位，而該儲存電容與該節點電性相連， 表單編號A0101 第4頁/共22頁 0982077364-0 201122964 並依據該光感測元件之一光照度於一晝面時間内，將該 節點放電至一第二電壓準位。該第二電壓準位控制該第 一薄膜電晶體之一導通電壓，而該第二薄膜電晶體係依 據該導通電壓，輸出一讀取電壓。 [0009] Ο [0010] [0011] ❹ 於本發明之另一實施例中，提供一種顯示器，其包括一 第一基板、一第二基板、一設置於該第一基板與第二基 板之間的液晶層、一包括複數個光感測區之有效顯示區 ;該有效顯示區設置於第二基板，於每一該光感測區可 設置一光感測裝置，該光感測裝置包括複數個上述之光 感測裝置。 【實施方式】 以下的說明以及範例用以解釋本發明的細節。惟，熟習 此項技藝之人士應可輕易瞭解，在本發明之實施例所涵 蓋下，所述及之該些實施例應有相當的變化以及改良。 因此，以下所述的實施例並不用以限制本鼙明的範圍。 請參閱第一圖，其為根據本發明一實施例之顯示器的系 統方塊圖，該顯示器包括一有效顯示區1，一閘.極線驅動 器2、一輸出控制器3，以及一資料線驅動器4。於該有效 顯示區1，複數個閘極線（gate lines)以及複數個輸出 線（output lines)彼此絕緣相交，以定義出複數個光感 測區10。於第一圖中，該些閘極線係以G(i)標示，而輸 出線則以ou t (j)標示，其中i與j表示索引號（i ndex)， 且i與j的總數不必然相等。於每一該光感測區10内，一 光感測裝置11與相鄰之兩閘極線與一輸出線電性相連， 並輸出一讀取電壓。 098145274 表單編號A0101 第5頁/共22頁 0982077364-0 201122964 [0012] 其中，該閘極線驅動器2將複數個閘極脈衝（p u 1 s e s )依 序施加於該些閘極線G(i)，除了用於開啟每一畫素 (pixel)中的電晶體，同時也用以觸發每一該光感測區内 之光感測裝置11 ’對於畫素容後敘述；而輸出控制器3用 以操取每一該光感測裝置11之讀取電壓，並進行所需之 訊號處理或轉換。該資料線驅動器4則控制複數個資料線 data ’用於寫入影像資料到複數個畫素單元（顯示於第二 A圖以及第二B圖）。 [⑻ 13] 請參閱第二A圖，其顯示本發明之光感測裝置的第一實施 例示意圖 本發明之每一該光感測裝置U輿相鄰之一第[0003] 先前 [Prior Art] With the rapid development of technology, network, s and communication, electronic products must seek direct interaction with users in addition to the novelty conditions of technology to meet users. Convenience and interactivity requirements. As a result, many touch-sensitive products and interfaces have been introduced, such as ATMs, Personal Digital Assistants (PDAs), mobile phones, or notebook computers. The touch-sensitive product enables direct interaction between the user and the electronic product by the user to approach or press the touch panel to complete the transmission, access and update of the data, thereby increasing the efficiency of the input. • . . - - , , r'·- 1 In the conventional technique, the touch panel is surrounded by a thin crystal transistor (I i qu id crystal display, LCD) and thin film transistor of the liquid crystal display (thin A -film transistor (TFT) array structure is embedded with a light sensing device. When the user approaches or presses the display panel with a finger, a stylus or other object, some or all of the light sources of the light sensing device in the panel are shielded, so the light sensing device can manipulate the finger by sensing the change of the light. , the image of the stylus or other object on the touch panel and its coordinate position. [0004] The prior art discloses an optical sensing device that includes a plurality of sensing pixel circuits; each of the sensing pixel circuits includes a 098145274 Form No. A0101 Page 3 / Total 22 Page 0982077364 -0 201122964 [0005] [0007] [0008] 098145274 photoelectric thin film transistor and a plurality of read thin film transistors; one of which reads a thin film electro-crystalline system as a reset, thus its gate It must be electrically connected to a reset signal to read a first reset voltage. In addition, in order to reflect the electrical signal result of the pixel circuit at different shading levels, a second reset voltage is required, and a voltage level is formed between the second reset voltage and the first reset voltage. difference. Since these conventional techniques require additional control signals in addition to the existing circuits of the pixel unit, the circuit architecture is complicated. However, an overly complex circuit architecture will increase the wiring difficulty of the thin film transistor and increase the cost. Furthermore, since the light sensing signal is usually quite weak, if a complicated control circuit is added to obtain a strong signal under the original circuit structure of the pixel unit, the aperture ratio of the display will be lowered. Therefore, it is difficult to balance the optical signal strength and the complexity of the sensing device when designing an optical sensor embedded in a display. SUMMARY OF THE INVENTION In view of this, an object of the present invention is to provide a light sensing device that uses the original circuit structure of a pixel unit without additional control signals, thereby simplifying the circuit structure and simplifying the layout. Another object of the present invention is to provide a display comprising a plurality of the above-mentioned light sensing devices. Since the circuit structures of the light sensing devices are simple, the aperture ratio of the display is not lowered. In an embodiment of the invention, a light sensing device is provided, comprising a light sensing component, a storage capacitor, a first thin film transistor, and a second thin film transistor. The light sensing component can reset the voltage of a node to a first voltage level, and the storage capacitor is electrically connected to the node, and the form number A0101 is 4th/22 pages 0982077364-0 201122964 and is based on the light One of the sensing elements illuminates the node to a second voltage level for a period of time. The second voltage level controls a turn-on voltage of the first thin film transistor, and the second thin film transistor system outputs a read voltage according to the turn-on voltage. [0009] In another embodiment of the present invention, a display includes a first substrate, a second substrate, and a first substrate and a second substrate. a liquid crystal layer, an effective display area including a plurality of light sensing regions; the effective display area is disposed on the second substrate, and each of the light sensing regions may be provided with a light sensing device, wherein the light sensing device includes a plurality of One of the above light sensing devices. [Embodiment] The following description and examples are intended to explain the details of the invention. However, those skilled in the art should readily appreciate that the embodiments described herein are susceptible to variations and modifications. Therefore, the embodiments described below are not intended to limit the scope of the invention. Please refer to the first figure, which is a system block diagram of a display according to an embodiment of the invention. The display comprises an effective display area 1, a gate, a line driver 2, an output controller 3, and a data line driver 4. . In the effective display area 1, a plurality of gate lines and a plurality of output lines are insulated from each other to define a plurality of light sensing regions 10. In the first figure, the gate lines are indicated by G(i), and the output lines are indicated by ou t (j), where i and j represent index numbers (i ndex), and the total number of i and j is not Must be equal. In each of the light sensing regions 10, a light sensing device 11 is electrically connected to an adjacent two gate lines and an output line, and outputs a read voltage. 098145274 Form No. A0101 Page 5 of 22 0982077364-0 201122964 [0012] wherein the gate line driver 2 sequentially applies a plurality of gate pulses (pu 1 ses ) to the gate lines G(i) In addition to being used to turn on the transistors in each pixel, and also to trigger the light sensing device 11 in each of the light sensing regions to be described later; and the output controller 3 To read the read voltage of each of the light sensing devices 11, and perform the required signal processing or conversion. The data line driver 4 controls a plurality of data lines data' for writing image data to a plurality of pixel units (shown in the second A picture and the second B picture). [(8) 13] Referring to FIG. 2A, which shows a first embodiment of the light sensing device of the present invention, each of the light sensing devices of the present invention is adjacent to the first
閘極線G(n)、一第二閘極.線G.(n + 1)..以及一輸出線out 電性相連；該光感測裝置11包括：一光感測元件p ' 一儲 存電容Cst、一第一薄膜電晶體T1以及一第二薄膜電晶體 T2。其中，該光感測元件p之一端與該第二閘極線 G(n + 1)電性相連，另一端則定義一節點χ ;該光感測元件 P可為任一將光訊號轉換為電性訊號之元件，例如光感應a gate line G(n), a second gate, a line G.(n+1), and an output line out are electrically connected; the light sensing device 11 includes: a light sensing element p' The capacitor Cst, a first thin film transistor T1 and a second thin film transistor T2. Wherein, one end of the photo sensing element p is electrically connected to the second gate line G(n + 1), and the other end defines a node χ; the photo sensing element P can convert any optical signal into a component of an electrical signal, such as a light sensor
二極體（photodiodes)或光電薄膜電晶體（photo thin film transistors)。如第二A圖所顯示之第一實施例 ，該光感測元件P可為一光電薄膜電晶體，其閘極與源/ 及極之其一與該第二掃描線G(n+1)電性相連，而另一源/ 汲極用以定義該節點X。以下說明以及申請專利範圍有多 處使用「源/汲極」，其與「源極或者汲極」係為同義。 該儲存電容Cst的一端與上述節點X電性相連，彼端則電 性連接於一共同（common)電壓Vc〇m。該第一薄膜電晶體 T1的閘極與該卽點X電性相連，其源/汲極之一與該第一 098145274 表單編號A0101 第6頁/共22頁 0982077364-0 [0014] 201122964 閘極線G(n)電性相連；該節點X之電壓準位用以控制該第 一薄膜電晶體T1之開關（on or off)，於開啟第一薄膜 電晶體T1的情況下，並決定一導通電壓之大小；該第二 薄膜電晶體T2的閘極與該第一閘極線G(n)電性相連，其 源/汲極之一則與該輸出線out電性相連，該第二薄膜電 晶體T2之另一源/汲極則與第一薄膜電晶體T1的另一源/ 汲極電性相連。 [0015] Ο 第二A圖亦同時顯示一個子畫素（sub-pixel)單元12，該 子畫素單元12包含於一個畫素單元内，每一該晝素單元 包括紅、綠以及藍三個子畫素單元，第二A圖僅例示其中 的一個子晝素單元12，且本發明並不為所顯示之子畫素 單元12電路所限。繪製子畫素單元12於圖式中之目的， 僅顯示本發明之光感測裝置11之電路訊號可與畫素單元 共同使用，因此無須增設其它額外電路訊號，俾使本發 明之電路架構較為簡單。 [0016] Ο - [0017] 請參見第二B圖，其顯示本發明之光感測裝置的第二實施 例，其中資料線data與輸出線ou1;係為共用，致使光感測 裝置與畫素單元加以整合，電路架構更為簡化。 第三圖顯示本發明之顯示器一實施例之層疊結構圖，為 簡化說明，該結構圖僅作部分顯示並簡化其結構，且未 依照比例繪製。如第三圖，本發明之顯示器包括一第一 基板41、一第二基板42、以及設置於第一基板41以及第 二基板42之間的一液晶層43。該第一基板41相對第二基 板42之一側形成一遮光層44，該遮光層44覆蓋處可定義 一非透光區。於一實施例中，該遮光層44可為黑矩陣 098145274 表單編號A0101 第7頁/共22頁 0982077364-0 201122964 (black matrix)。第三圖顯示本發明之有效顯示區 设置於該第一基板42，且於該有效顯示區1定義該些光感 測區10 ’每一該光感測區10可設置一該光感測裝置U。 為方便顯示’第二圖僅顯示其中一光感測裝置11形成於 第二基板42。 [0018] [0019] [0020] 該遮光層44對應光感測元件p處，設置有一開口 a ;當外 界物體4 6遮蔽該開口 4 5，將改變該光感測元件p的一光照 度（illuminance)，該光感測元件p根據該光照度，將光 訊號轉換為一漏電流之電氣訊號，而讓光照度係與該漏 電流大小呈正相關。〇 第四圖為本發明之電壓訊號時序圖（voltage timing diagram)，其顯示複數個預設週期3〇 每一該預設週期 30包括一重置期間（reset peri〇d)31、一積分期間 (integration period)32、以及一讀取期間（read out peri〇d)33。該預設週期3〇可為一畫面（frame)時 間，例如1 / 60 s。 請配合參閱第二A圖或第二b圖，於第四圖所顯示之該重 〇 置期間31，該閘極線驅動器2(請見第一圖）施加一脈衝 (pulse)於該第二閘極線〇(η+ι)，使第二閘極線G(n + i) 成為致能（enable )’藉以導通與該第二閘極線G(n + 1) 電性相連之光感測元件P，並將該光感測元件p彼端之節 點X電壓重置為一第一電壓準位。 接著，於該積分期間，與該光感測元件p相鄰之第一閘極 線G(n)以及第二閘極線以n+1)皆為非致能（disable)， 098145274 表單編號A0101 第8頁/共22頁 0982077364-0 [0021] 201122964 儲存於該儲存電容(^ t之 电電荷經由光感測元件p持續釋出 ，自該儲存電容Cst釋出之電荷量與該光感測元件p之光 ’’、、度相關，如該光感測元件P為外界物體46所遮蔽，將降 低光照度，因此造成光感測元件P的漏電流減小，儲存電 容Cst將節點X放電幅度亦隨之減少。請參見第五a圖，其 顯示節點X於高光照度與低光照度之兩光照度下的放電幅 度差異。Photodiodes or photo thin film transistors. As shown in the first embodiment of FIG. A, the photo sensing element P can be a phototransistor transistor, one of its gate and source/pole and the second scan line G(n+1). Electrically connected, and another source/drain is used to define the node X. The following descriptions and the scope of patent application use "source/bungee" in many places, which is synonymous with "source or bungee". One end of the storage capacitor Cst is electrically connected to the node X, and the other end is electrically connected to a common voltage Vc〇m. The gate of the first thin film transistor T1 is electrically connected to the defect point X, one of the source/drain electrodes and the first 098145274 Form No. A0101 Page 6 of 22 page 0982077364-0 [0014] 201122964 Gate The line G(n) is electrically connected; the voltage level of the node X is used to control the on or off of the first thin film transistor T1, and the first thin film transistor T1 is turned on, and a conduction is determined. The gate of the second thin film transistor T2 is electrically connected to the first gate line G(n), and one of the source/drain electrodes is electrically connected to the output line out, and the second thin film is electrically connected The other source/drain of the crystal T2 is electrically connected to the other source/drain of the first thin film transistor T1. [0015] Ο The second A picture also shows a sub-pixel unit 12, the sub-pixel unit 12 is contained in one pixel unit, and each of the unit elements includes red, green and blue The sub-pixel unit, the second A diagram only illustrates one of the sub-cell units 12, and the present invention is not limited by the circuit of the sub-pixel unit 12 shown. For the purpose of drawing the sub-pixel unit 12 in the figure, only the circuit signal of the light sensing device 11 of the present invention can be used together with the pixel unit, so that no additional circuit signals need to be added, so that the circuit structure of the present invention is relatively simple. [0016] Referring to FIG. 2B, a second embodiment of the light sensing device of the present invention is shown, wherein the data line data and the output line ou1 are shared, thereby causing the light sensing device and the drawing The unit elements are integrated and the circuit architecture is simplified. The third drawing shows a laminated structure of an embodiment of the display of the present invention, which is only partially shown and simplified in structure, and is not drawn to scale. As shown in the third figure, the display of the present invention includes a first substrate 41, a second substrate 42, and a liquid crystal layer 43 disposed between the first substrate 41 and the second substrate 42. The first substrate 41 forms a light shielding layer 44 on one side of the second substrate 42. The light shielding layer 44 can define a non-light transmitting region. In an embodiment, the light shielding layer 44 can be a black matrix 098145274 Form No. A0101 Page 7 of 22 0982077364-0 201122964 (black matrix). The third figure shows that the effective display area of the present invention is disposed on the first substrate 42 , and the light sensing areas 10 are defined in the effective display area 1 ′ each of the light sensing areas 10 can be provided with the light sensing device. U. For convenience of display, the second diagram shows only one of the light sensing devices 11 formed on the second substrate 42. [0020] [0020] The light shielding layer 44 corresponds to the light sensing element p, and is provided with an opening a; when the external object 46 shields the opening 45, it will change an illuminance of the light sensing element p (illuminance) The light sensing component p converts the optical signal into an electrical signal of a leakage current according to the illuminance, and causes the illuminance system to be positively correlated with the magnitude of the leakage current. The fourth figure is a voltage timing diagram of the present invention, which displays a plurality of preset periods 3, each of which includes a reset period (reset peri〇d) 31 and an integration period. (integration period) 32, and a read out period (read out peri〇d) 33. The preset period 3〇 can be a frame time, for example, 1 / 60 s. Please refer to the second A diagram or the second b diagram. During the reset period 31 shown in the fourth figure, the gate line driver 2 (see the first figure) applies a pulse to the second The gate line 〇(η+ι) causes the second gate line G(n + i) to be enabled (enable) to turn on the light sensation electrically connected to the second gate line G(n + 1) The component P is measured, and the node X voltage of the photo sensing element p is reset to a first voltage level. Then, during the integration period, the first gate line G(n) adjacent to the photo sensing element p and the second gate line are disabled by n+1), 098145274 Form No. A0101 Page 8 of 22 page 0982077364-0 [0021] 201122964 The electric charge stored in the storage capacitor (^t is continuously released via the photo sensing element p, the amount of charge released from the storage capacitor Cst and the light sensing The light of the element p is related to the degree, and if the light sensing element P is shielded by the external object 46, the illuminance will be reduced, thereby causing the leakage current of the photo sensing element P to decrease, and the storage capacitor Cst will discharge the node X. It is also reduced. See Figure 5 a, which shows the difference in discharge amplitude of node X at two illuminances, high and low.
[0022] G[0022] G
[0023] 〇 請再度回到第四圖，接著於該讀取期間33，該閘極線驅 動器2施加另—脈衝（pUise)於該第一閘極線G(n) ’使第 ...... ... 一閘極線G(n)成為致能，而開啟第二薄膜電晶體T2。因 第一薄膜電晶體T1的源/汲極之一輿第一閘·極線G(η)電性 相連’而其閘極與節點X電性相連’故‘該笫一薄膜電晶體 Τ1亦被開啟。 於整個預設週期3〇内，根據光感測元件少之光照度，該節 點X持續放電，至該預設週斯30妁最末（亦f卩讀取期間33 的最末），經由光感測元件P’:’.將:印'.點X衣電至一第一電壓 準位。該第二電壓準位控制第一薄.膜電晶體T1的導通程 度，使第一薄臈電晶體T1與第二薄膜電晶體電性相連端 具有一導通電壓。進一步而言’第二電壓準位與導通電 壓呈現一函數相關，如第二電壓準位較大，第一薄膜電 晶體T1的導通程度亦將增加，因此存在一較大之導通電 壓。經由開啟之第二薄膜電晶體T2，該導通電壓將決定 第二薄膜電晶體T2之一讀取電壓，並輸出該讀取電壓至 該輸出線。 [0024] 在一個預設週期30内（或是一個畫面時間内），所有的該 098145274 表單編號A0101 第9頁/共22頁 09 201122964 些閘極線G ( i )依序被掃描，得到光感測區1 0内光感測裝 置11的所有讀取電壓。因讀取電壓和導通電壓相關，而 導通電壓決定於節點X之第二電壓準位。更進一步，第二 電壓準位相關於光感測元件Ρ的光照度，光照度則由外界 物體46遮蔽光感測元件Ρ的程度所決定。第五Β圖顯示讀 取電壓於高光照度與低光照度之電壓幅度差異。於此， 擷取所有光感測區10的讀取電壓，可分析出外界物體46 之瞬時影像以及其座標位置，如再配合顯示器之晝素單 元或是其他裝置與元件，可產生彩度或是其他功能，於 此不贅述。 [0025] 本發明之光感測裝置，使用畫素單元之原電路架構，無 須額外增加其他控制訊號，因此電路架構簡化、佈局簡 單。且藉由該預設週期30之調整，可使節點X的放電幅度 增加，俾使輸出的讀取電壓差異增大，因此有利於光照 度之分析比較。 [0026] 本發明以一實施例揭露如上文，然其並非用以限定者。 任何熟習此項技藝者，在不脫離本發明之精神以及範圍 内，當可進行各種實質上相等的變動以及潤飾，因此本 發明之保護範圍當以後附之申請專利範圍所界定者為準 〇 【圖式簡單說明】 [0027] 為使本發明之上述和其他目的、特徵、優點與實施例可 容易了解，所附圖式之詳細說明如下： [0028] 第一圖為根據本發明一實施例之顯示器的系統方塊圖； 098145274 表單編號Α0101 第10頁/共22頁 0982077364-0 201122964 [0029] 第二A圖顯示本發明之光感測裝置的第一實施例示意圖； [0030] 第二B圖顯示本發明之光感測裝置的第二實施例示意圖； [0031] 第三圖為本發明之顯示器一實施例之剖面層疊結構簡化 圖， [0032] 第四圖顯示本發明之電壓訊號時序圖； [0033] 第五A圖顯示節點X於高光照度與低光照度之兩光照度下 的放電幅度差異，以及 ❹ 〇 [0034] 第五B圖顯示讀取電壓於高光照度與低光照度之電壓幅度 差異。 【主要元件符號說明】 [0035] 1有效顯示區 2閘極線驅動器 3輸出控制器 4資料線驅動器 1 0光感測區 11光感測裝置 T1第一薄膜電晶體 T2第二薄膜電晶體 P光感測元件 Cst儲存電容 X節點 12子畫素單元 data資料線 G(n)第一閘極線 098145274 表單編號A0101 第11頁/共22頁 0982077364-0 201122964 G (η +1)第二閘極線 out輸出線 Vcom共同電壓 30預設週期 31重置期間 32積分期間 33讀取期間 41第一基板 42第二基板 4 3液晶層 44遮光層 45開口 46外界物體 098145274 表單編號A0101 第12頁/共22頁 0982077364-0[0023] Please return to the fourth figure again, then in the read period 33, the gate line driver 2 applies another pulse (pUise) to the first gate line G(n) '... ... A gate line G(n) becomes enabled, and the second thin film transistor T2 is turned on. Since one of the source/drain of the first thin film transistor T1 is electrically connected to the first gate/pole line G(n) and its gate is electrically connected to the node X, the thin film transistor Τ1 is also Was opened. Within 3 整个 of the entire preset period, according to the illuminance of the light sensing component, the node X continues to discharge until the last 30 妁 of the preset period (also the last of the reading period 33), via the light sensation The measuring component P': '. will: print '. point X clothing to a first voltage level. The second voltage level controls the conduction degree of the first thin film transistor T1, so that the first thin germanium transistor T1 and the second thin film transistor have an on-voltage. Further, the second voltage level is related to the conduction voltage. If the second voltage level is large, the conduction degree of the first thin film transistor T1 will also increase, so that there is a large conduction voltage. The turn-on voltage determines a read voltage of one of the second thin film transistors T2 via the turned-on second thin film transistor T2, and outputs the read voltage to the output line. [0024] In a preset period 30 (or a picture time), all of the 098145274 form number A0101 page 9 / total 22 page 09 201122964 some gate lines G ( i ) are sequentially scanned to obtain light All of the read voltages of the light sensing device 11 in the sensing region 10 are sensed. Because the read voltage is related to the turn-on voltage, the turn-on voltage is determined by the second voltage level of the node X. Further, the second voltage level is related to the illuminance of the photo sensing element ,, and the illuminance is determined by the extent to which the external object 46 shields the photo sensing element Ρ. The fifth graph shows the difference in voltage amplitude between the read and the high light and low light. In this case, the reading voltage of all the light sensing regions 10 can be extracted, and the instantaneous image of the external object 46 and its coordinate position can be analyzed. If the display is combined with the pixel unit of the display or other devices and components, the chroma can be generated. It is another function and will not be described here. [0025] The optical sensing device of the present invention uses the original circuit structure of the pixel unit, and does not need to add other control signals, so the circuit structure is simplified and the layout is simple. Moreover, by adjusting the preset period 30, the discharge amplitude of the node X can be increased, and the difference in the read voltage of the output is increased, thereby facilitating analysis and comparison of the illuminance. The present invention has been disclosed in an embodiment as described above, but it is not intended to be limiting. Any and all equivalent variations and modifications may be made without departing from the spirit and scope of the invention, and the scope of the present invention is defined as the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS [0027] In order to make the above and other objects, features, advantages and embodiments of the present invention readily <RTIgt; System block diagram of the display; 098145274 Form number Α 0101 Page 10 / Total 22 page 0982077364-0 201122964 [0029] FIG. 2A is a view showing a first embodiment of the light sensing device of the present invention; [0030] The figure shows a schematic diagram of a second embodiment of the light sensing device of the present invention; [0031] The third figure is a simplified diagram of a cross-sectional laminated structure of an embodiment of the display of the present invention, [0032] The fourth figure shows the voltage signal timing of the present invention Figure 5; [0033] Figure 5A shows the difference in discharge amplitude between node X at high illumination and low illumination, and ❹ 〇 [0034] Figure 5B shows the read voltage at highlights The difference in voltage amplitude between illuminance and low illumination. [Main component symbol description] [0035] 1 effective display area 2 gate line driver 3 output controller 4 data line driver 10 light sensing area 11 light sensing device T1 first thin film transistor T2 second thin film transistor P Light sensing element Cst storage capacitor X node 12 subpixel unit data data line G(n) first gate line 098145274 Form number A0101 Page 11 of 22 0982077364-0 201122964 G (η +1) second gate Polar line out output line Vcom common voltage 30 preset period 31 reset period 32 integration period 33 reading period 41 first substrate 42 second substrate 4 3 liquid crystal layer 44 light shielding layer 45 opening 46 external object 098145274 Form No. A0101 Page 12 / Total 22 pages 0982077364-0