201120928 六、發明說明： 【發明所屬之技術領域】 [0001] 本案係有關電感結構，尤指一種薄型化的電感結構。 [先前技術] [0002] 在電子產品輕薄短小的趨勢下，整個電路系統（包括 主動與被動元件）需要以高密度的方式整合。如系統晶片 (System On Chip)，簡稱 SOC 或 SIP(系統封裝）。 [0003] 電路系統晶片中的被動元件通常都含有震盪電路，也 因此必須使用到電容和電感，而電感的結構通常由金屬 導線與磁性材料所共同組成。其中磁性材料能增進電感 值並有.電磁遮蔽的功用。磁性材料的導磁率與厚度與電 感的感值有關；使用高導磁率的金屬鐵磁材料可以降低 整體電感結構的厚度，藉以達到薄形化的需求。 [0004] 請參閱「圖1」所示，其為習用的電感5，該電感5包 含一鐵氧體的遮蔽鼓1與一使用螺旋的方式排列設置的金 屬導線2，且該金屬導線2藉由樹脂3的充填而獲得保護， Ο 且該金屬導線2電性連接至二焊墊4以作為電性接點，其 形成垂直堆疊的電感5，而可利用垂直堆疊的方式增加感 應磁場的面積，藉此產生較大的電感值。 [0005] 此習知電感5的垂直的設計較不會影響到電路設計的 使用面積。然而其要產生較大的電感值時，除了需增加 該金屬導線2的繞線圈數之外，其所使用的遮蔽鼓1亦需 具相當的厚度，因此造成整體厚度的增加頗多，其除了 增加材料的使用量之外，亦使電子產品難以薄型化，無 法滿足需求。 表單編號A0101 098141113 第3頁/共14頁 0982070553-0 201120928 【發明内容】 [0006] 本發明之主要目的在於利用金屬鐵磁薄膜減少電感所 需磁性材料的厚度。 [0007] 本發明之次要目的在於利用金屬鐵磁薄膜的阻絕電磁 放射，以增加感應效果。 [0008] 為了達到上述目的，本發明為一種具金屬鐵磁薄膜的 電感，其電感包含一上磁性材料層、一下磁性材料層與 一螺旋排列的金屬導線，其中該金屬導線被該上磁性材 料層與該下磁性材料層夾制，且該上磁性材料層與該下 磁性材料層的任一個為金屬鐵磁薄膜。 [0009] 據此，本發明藉由金屬鐵磁薄膜的設置，藉而利用金 屬鐵磁薄膜良好的遮蔽與阻絕，來形成良好的磁場效果 ，其可以提昇該電感的感值並減少該上磁性材料層或該 下磁性材料層所需的厚度，在減少該上磁性材料層或該 下磁性材料層的厚度之後，即可構成薄型化的電感結構 〇 【實施方式】 [0010] 茲有關本發明的詳細内容及技術說明，現以實施例來 作進一步說明，但應瞭解的是，該等實施例僅為例示說 明之用，而不應被解釋為本發明實施之限制。 [0011] 請參閱「圖2」所示，其為本發明的第一實施例，其 電感40A包含一上磁性材料層10A、一下磁性材料層20A 與一螺旋排列的金屬導線30，其中該金屬導線30被該上 磁性材料層10A與該下磁性材料層20A夹制。於本實施例 098141113 表單編號A0101 第4頁/共14頁 0982070553-0 201120928 中口玄下磁性材料層2()Α可以為亞鐵鹽（h出e)合金。 而》亥上磁崎料層1QA為金屬鐵磁薄膜 而具較薄的厚度， 其可以為選自H錄、或含鐵賊之合金的保—種 〇 [0012] [0013] ❹201120928 VI. Description of the invention: [Technical field to which the invention pertains] [0001] The present invention relates to an inductor structure, and more particularly to a thinned inductor structure. [Prior Art] [0002] In the trend of thin and light electronic products, the entire circuit system (including active and passive components) needs to be integrated in a high-density manner. Such as System On Chip, referred to as SOC or SIP (system package). [0003] Passive components in circuit-system wafers typically contain an oscillating circuit, and therefore capacitors and inductors must be used, and the structure of the inductor is typically composed of a metal wire and a magnetic material. Among them, the magnetic material can enhance the inductance value and have the function of electromagnetic shielding. The magnetic permeability of the magnetic material is related to the thickness and the inductance of the inductor; the use of a high magnetic permeability metal ferromagnetic material can reduce the thickness of the overall inductive structure, thereby achieving the demand for thinning. [0004] Please refer to FIG. 1 , which is a conventional inductor 5 , which comprises a ferrite shielding drum 1 and a metal wire 2 arranged in a spiral manner, and the metal wire 2 is borrowed. The protection is obtained by the filling of the resin 3, and the metal wire 2 is electrically connected to the second pad 4 as an electrical contact, which forms the vertically stacked inductor 5, and the area of the induced magnetic field can be increased by vertical stacking. Thereby, a larger inductance value is generated. [0005] The vertical design of the conventional inductor 5 does not affect the area of use of the circuit design. However, in order to generate a large inductance value, in addition to increasing the number of windings of the metal wire 2, the shielding drum 1 used also needs to have a considerable thickness, thereby causing an increase in the overall thickness, in addition to In addition to increasing the amount of materials used, it is also difficult to make electronic products thinner and unable to meet demand. Form No. A0101 098141113 Page 3 of 14 0982070553-0 201120928 SUMMARY OF THE INVENTION [0006] The main object of the present invention is to reduce the thickness of a magnetic material required for inductance by using a metal ferromagnetic film. [0007] A secondary object of the present invention is to use a metal ferromagnetic film to resist electromagnetic radiation to increase the sensing effect. [0008] In order to achieve the above object, the present invention is an inductor having a metal ferromagnetic film, the inductor comprising an upper magnetic material layer, a lower magnetic material layer and a spirally arranged metal wire, wherein the metal wire is the magnetic material. The layer is sandwiched by the lower magnetic material layer, and any one of the upper magnetic material layer and the lower magnetic material layer is a metal ferromagnetic film. [0009] Accordingly, the present invention forms a good magnetic field effect by utilizing the arrangement of the metal ferromagnetic film, thereby utilizing the good shielding and blocking of the metal ferromagnetic film, which can improve the inductance of the inductor and reduce the magnetic property. The thickness of the material layer or the lower magnetic material layer can be reduced to form a thinned inductor structure after reducing the thickness of the upper magnetic material layer or the lower magnetic material layer. [Embodiment] [0010] The detailed description and the technical description are to be considered as illustrative and not restrictive. [0011] Referring to FIG. 2, which is a first embodiment of the present invention, the inductor 40A includes an upper magnetic material layer 10A, a lower magnetic material layer 20A and a spirally arranged metal wire 30, wherein the metal The wire 30 is sandwiched by the upper magnetic material layer 10A and the lower magnetic material layer 20A. In this embodiment 098141113 Form No. A0101 Page 4 of 14 0982070553-0 201120928 The middle layer of the magnetic material layer 2 () can be a ferrous salt (h out e) alloy. And the 1QA of the magnetic layer on the sea is a metal ferromagnetic film and has a thin thickness, which may be an alloy selected from the group consisting of H-recorded or iron-containing thief. [0012] 00
[0014] Q[0014] Q
[0015] 又本實加例更包含二焊藝5〇與二導電接線6〇，該二焊 塾50設於該下师材料層分義二導電接線60 與该金屬導線3〇的兩端電性連接。 且忒上磁性材料層1〇A與該下磁性材料層2〇A之間充填 有一樹脂70，並讓該樹脂7〇覆蓋該金屬導線川，以保護 «亥金屬導線30。並該上磁輯料層與該下磁性材料層 20Α之間以-柱狀磁性材料層連結，而該金屬導線⑽螺 旋排列纏繞於該錄魏㈣層15上，_狀磁性材料 層15可以為亞鐵鹽（Ferrite)合金或是由金屬鐵磁薄 膜的材料構成亦可》 請參閱「圖3」所示，其為本發明的第二實施例，其 電感40B結構大致與第一實施例相同，電感4〇B包含一上 磁性材料層10B、一下磁性材料層2〇B與一螺旋排列的金 屬導線30，不同在於該上磁性材料層1〇B包含一第—上 磁性材料層11 β與一第二上磁性材料層12β，其中該第一 上磁性材料層11Β為金屬鐵磁薄膜，該第二上磁性材料層 12Β則為亞鐵鹽合金。於本實施例中，雖然該上磁性材料 層10Β的厚度略增，然藉由該第二上磁性材料層】2β的存 在可增加感值。 請參閱「圖4」所示，其為本發明的第三實施例，其 098141113 表單編號Α0101 第5頁/共14頁 0982070553-0 201120928 電感40C結構包含—上磁性材料層 20C與一螺旋排列的金屬導線3〇， 10C、一下磁性材料層 相較第二實施例而言， 同樣的該上磁性材料層⑽包含—第—上磁性材料層 與一第二上磁性材料層12G，而該下磁性材料層取更包 含一第-下磁性材料層21c與—第二下磁性材料層饥， 其令該第—下磁性材料層21C與該第-上磁性材料層llc 為金屬鐵磁薄膜，該第二下磁性材料層22C與該第二上磁 性材料層12C則為亞鐵鹽合金。因此藉由該第—下磁性材 料層21C金屬鐵磁薄膜的作用’相較第一、二實施例而言 ，該下磁性材料層20C的總體厚度即可縮減。[0015] In addition, the embodiment further includes two soldering 5 turns and two conductive wires 6〇, and the second soldering ring 50 is disposed on the two ends of the material layer of the second layer of the conductive wire 60 and the metal wire 3〇 Sexual connection. And a resin 70 is filled between the upper magnetic material layer 1A and the lower magnetic material layer 2A, and the resin 7 is covered to cover the metal wire to protect the metal wire 30. And the upper magnetic material layer and the lower magnetic material layer 20Α are connected by a columnar magnetic material layer, and the metal wire (10) is spirally wound around the recorded Wei (four) layer 15, and the _-shaped magnetic material layer 15 may be The ferrite alloy may be composed of a material of a metal ferromagnetic film. Referring to FIG. 3, which is a second embodiment of the present invention, the structure of the inductor 40B is substantially the same as that of the first embodiment. The inductor 4A includes an upper magnetic material layer 10B, a lower magnetic material layer 2B and a spirally arranged metal wire 30, except that the upper magnetic material layer 1B includes a first magnetic material layer 11β and a second upper magnetic material layer 12β, wherein the first upper magnetic material layer 11 is a metal ferromagnetic film, and the second upper magnetic material layer 12 is a ferrous salt alloy. In the present embodiment, although the thickness of the upper magnetic material layer 10 is slightly increased, the presence of the second upper magnetic material layer 2β increases the inductance. Please refer to FIG. 4, which is a third embodiment of the present invention, which is 098141113, form number Α0101, page 5/14 pages 0982070553-0, 201120928. The inductor 40C structure includes an upper magnetic material layer 20C and a spiral array. The metal wire 3〇, 10C, and the lower magnetic material layer are the same as the second embodiment, and the same upper magnetic material layer (10) includes a first magnetic material layer and a second upper magnetic material layer 12G, and the lower magnetic layer The material layer further comprises a first-lower magnetic material layer 21c and a second lower magnetic material layer, wherein the first-lower magnetic material layer 21C and the first-up magnetic material layer llc are metal ferromagnetic thin films, the first The second lower magnetic material layer 22C and the second upper magnetic material layer 12C are ferrous salt alloys. Therefore, the overall thickness of the lower magnetic material layer 20C can be reduced by the action of the metal-ferromagnetic film of the first-lower magnetic material layer 21C as compared with the first and second embodiments.
[0016] 請參閱「圖5」所示，其為本發明㈣四實施例，如 第—實施例所述的電細A結構，亦可以設置於—基板 上，該基板8G包含有-基村部81以及_設置在該基材部 =上的容置部82，該容置部82供該電感復設置而該 =置部82可以為於該基材部81上_來完成，或者，該 容置部82可以為於該基材部81上鑽孔來完成。又第四實 施例的基材部81可以為石夕、氧化㈣及坤化鎵的任—種[0016] Please refer to FIG. 5, which is a fourth embodiment of the present invention. The electric thin A structure according to the first embodiment may also be disposed on a substrate, and the substrate 8G includes a base village. The portion 81 and the accommodating portion 82 provided on the base portion _, the accommodating portion 82 is provided for the inductance, and the portion 82 can be completed on the base portion 81, or The accommodating portion 82 can be completed by drilling a hole in the base portion 81. Further, the base material portion 81 of the fourth embodiment may be any of the types of Shixia, Oxidation (4), and Kunlun Gallium.
[0017] …請參閱「圖6」所示，其為本發明的第五實施例，其 電感40D結構包含-上磁性材料層咐、—下磁性材料層 咖與—螺旋排列的金屬導線3〇，與第四實施例相較，曰其 该下磁性材料層20D可為金屬鐵磁薄勝而具較薄的厚产， 讓該電感柳幾乎與該基板㈣同—平面，並進―步^型 [0018] 098141113 表單=’==結構— 0982070553-0 201120928 有良好的遮蔽與阻絕作用，可以提昇電感的感值並減少 上磁性材料層或下磁性材料層所需的厚度，故本發明可 降低厚度、增加感應，滿足薄型化的需求，又本發明更 可藉與基板進一步整合，達成增加封裝密度並縮小電子 產品的體積之目標。 [0019] ❹ [0020] [0021] [0022] [0023] [0024] [0025] Ο [0026] [0027] [0028] [0029] [0030] [0031] 098141113 惟上述僅為本發明之較佳實施例而已，並非用來限定 本發明實施之範圍。即凡依本發明申請專利範圍所做的 均等變化與修飾，皆為本發明專利範圍所涵蓋。 【圖式簡單說明】 圖1，為習用的電感結構。 圖2，為本發明電感的第一實施例結構圖。 圖3，為本發明電感的第二實施例結構圖。 圖4，為本發明電感的第三實施例結構圖。 圖5，為本發明電感的第四實施例結構圖。 圖6，為本發明電感的第五實施例結構圖。 【主要元件符號說明】 習知 1 :遮蔽鼓 2 :金屬導線 3 :樹脂 4 :焊墊 5 :電感 表單編號Α0101 第7頁/共14頁 0982070553-0 201120928 [0032] 本發明 [0033] 10A、10B、10C、10D : 上磁性材料層 [0034] 11B、11C :第一上磁性材料層 [0035] 12B、12C :第二上磁性材料層 [0036] 15 :柱狀磁性材料層 [0037] 20A、20B、20C ' 20D : 下磁性材料層 [0038] 21C :第一下磁性材料層 [0039] 22C :第二下磁性材料層 [0040] 30 :金屬導線 [0041] 40A、40B、40C、40D : 電感 [0042] 50 :焊墊 [0043] 60 :導電接線 [0044] 7 0 :樹脂 [0045] 8 0 :基板 [0046] 81 :基材部 [0047] 82 :容置部 098141113 表單編號A0101 第8頁/共14頁 0982070553-0[0017] Referring to FIG. 6 , which is a fifth embodiment of the present invention, the inductor 40D structure includes an upper magnetic material layer, a lower magnetic material layer, and a spirally arranged metal wire 3〇. Compared with the fourth embodiment, the lower magnetic material layer 20D can be made of metal ferromagnetic thinner and has a thinner thickness, so that the inductor will be almost the same as the substrate (four), and the step-by-step type [0018] 098141113 Form = '== Structure - 0982070553-0 201120928 has good shielding and blocking effect, can improve the inductance value of the inductor and reduce the thickness required for the upper magnetic material layer or the lower magnetic material layer, so the invention can be reduced The thickness and the inductance are increased to meet the demand for thinning, and the invention can be further integrated with the substrate to achieve the goal of increasing the packaging density and reducing the volume of the electronic product. [0019] [0020] [0020] [0024] [0023] [0024] [0024] [0024] [0028] [0028] [0029] [0013] [0031] 098141113 only the above is only the comparison of the present invention The preferred embodiments are not intended to limit the scope of the practice of the invention. That is, the equivalent changes and modifications made by the scope of the patent application of the present invention are covered by the scope of the invention. [Simple diagram of the diagram] Figure 1, is a conventional inductor structure. Fig. 2 is a structural view showing a first embodiment of the inductor of the present invention. Fig. 3 is a structural view showing a second embodiment of the inductor of the present invention. Fig. 4 is a structural view showing a third embodiment of the inductor of the present invention. Fig. 5 is a structural view showing a fourth embodiment of the inductor of the present invention. Fig. 6 is a structural view showing a fifth embodiment of the inductor of the present invention. [Explanation of main component symbols] Convention 1: Masking drum 2: Metal wire 3: Resin 4: Solder pad 5: Inductance form number Α 0101 Page 7 / Total 14 pages 0982070553-0 201120928 [0032] The present invention [0033] 10A, 10B, 10C, 10D: upper magnetic material layer [0034] 11B, 11C: first upper magnetic material layer [0035] 12B, 12C: second upper magnetic material layer [0036] 15 : columnar magnetic material layer [0037] 20A 20B, 20C ' 20D : lower magnetic material layer [0038] 21C : first lower magnetic material layer [0039] 22C : second lower magnetic material layer [0040] 30 : metal wire [0041] 40A, 40B, 40C, 40D : Inductance [0042] 50 : Solder pad [0043] 60 : Conductive wiring [0044] 7 0 : Resin [0045] 8 0 : Substrate [0046] 81 : Substrate part [0047] 82 : accommodating part 098141113 Form No. A0101 Page 8 of 14 page 0982070553-0