TW201119512A - Lamp driving apparatus and level shift driving circuit - Google Patents

Abstract

Disclosed is a lamp driving apparatus, comprising a switch module, a controller, a resonant module and a level shift circuit. The switch module comprises a high side MOSFET switch and a low side MOSFET switch connected in series, between an input power source and a common level. The controller is adapted to control the high side MOSFET switch and the low side MOSFET switch to switch for controlling the power from the input power source transmitted by the switch module. The resonant module is coupled to the switch module and converts the power from the input power source into an AC output signal to drive a lamp. The level shift circuit is coupled to the controller, the switch module and a level shift voltage and generates a high side control signal based on the level shift voltage, a control signal generated by the controller and a connecting node of the high side MOSFET switch and the low side MOSFET switch, which controls the switching of the high side MNOSFET switch.

Description

201119512, invention description: TECHNICAL FIELD The present invention relates to a lamp driving device and a displacement driving circuit. [Prior Art] Please refer to the first figure, which is a circuit diagram of a conventional fluorescent lamp driving circuit. The electronic stability controller 10 includes a high-end driving circuit HSD and a low-end driving circuit LSD, respectively driving a corresponding high-end P-type in the switching module 40 through a high-side driving pin 〇UM1 and a low-end driving pin OUM2. The gold-oxygen half-field effect transistor M1 and a low-end N-type gold-oxygen half-field effect transistor M2. The high-end p-type gold gas half-field effect transistor M1 and the low-end N-type gold-oxygen half-field effect transistor M2 are connected in series between an input power source VIN and a ground, and the power of the input power source VIN is transmitted according to the control of the electronic ballast 1〇. To a resonant module 3〇. The spectrum module 30 includes an inductor L1 and a capacitor C2 for converting the power of the input power source VIN into an alternating current signal to drive a lamp tube 20. ^ Electronic stability controller 10 in order to be able to accurately control the high-end P-type MOS half-field effect transistor, Ml and low-end N-type MOS half-effect transistor M2 conduction and wear, so the end drive circuit HSD and a low end The drive circuit LSD must be coupled to both the input power supply VIN and ground. However, the driving voltage of the lamp 2 在 is a few special, so the voltage of the input power supply VIN is also several hundred volts, so that the electronic safety controller is electronically stable. [Inventive content] I», first electrons The stability and cost of the stability control (4) t, the displacement drive circuit of the Ming not only provides the position of the control signal. The transistor at the county end can simultaneously make the $n-type gold-oxygen half-field effect transistor, and the circuit (4) Combined with the input power to the human part _ part of the component (10) high voltage element t t input power supply high voltage is applied to other components, so that the controller of the controller is used to achieve the above purpose, the present invention provides a lamp driving device, including A 201119512 switch module, a controller, a resonant mode, the group includes (four) - input voltage source and - common potential = crystal switch and a low-end transistor switch. Control two on the same switch and low-end transistor switch switch ^ ^ end ^ crystal signal to drive - lamp. Level control, switch module and displacement reference electronic control

Height: Transistor Switch: Line:: Use the number to generate - high-end control signal to control ii: same? ί provides a displacement drive circuit for displacement-control and a second-discharge path. After the path of the energy storage path, the displacement reference potential Wei Zhi power is sent. Wei component potential, used to store the displacement reference - the first end, the first release can be dicrystal, off. The first end of the second release path ==== ΐ Li The second release path - the second end consumes the reference potential, and uses j! to release ί J between the crystals (4) the capacitive contact (4) - electricity = - Step: The nature of the paradigm is for the sake of the advantages of the other objects and embodiments of the present invention. Γ circuit block module 130 and - ': 丨 40, for control state 100 includes a drive circuit 1 〇 5 minus a drive power repeatedly vcc and a total of 201119512 the same potential (ie ground) 'to penetrate the foot according to the potential of the drive voltage VCC Bit ουτ outputs a control signal Si2. The displacement drive circuit 110 includes a phase adjustment circuit 150 and a one-bit shift circuit 16A. The phase adjustment circuit 150 is coupled to the level shifting circuit 160' and receives the control signal Si2 to adjust the phase of the control signal Si2. The off module 140 is coupled to an input voltage source VIN and a common potential, and includes a transistor switch T1 and The low-end transistor switch T2, and the high-end ΐ crystal switch Τ1 are connected in series with the low-side transistor switch Τ2. In the present embodiment, the 2-body switch Τ1 and the low-end transistor switch Τ2 are both Ν-type gold oxide half-field crystals. The tenth 准^ quasi-shift circuit 160 is coupled to the controller 100, the switch module, the connection point VS of the middle and high-end electric cesium switch and the low-end transistor switch, and a displacement reference ray source. The driving power frequency vcc is taken as the displacement parameter i potential bit ί path 160 receives the phase adjustment circuit 150 to adjust the phase of the terminal end: the level of the body 1Sl2 is difficult according to the high-end transistor switch and the i-connected potential, and the output is a high-end Control 5ίΙ#〇&1. Since the high-end transistor switch 耵 VIN ^ drives electricity > 1 Gr volts, and is much higher than a few volts to tens of volts, the level of Sil is higher than the connection point VS - a drive The high-end transistor switch T1 can be smoothly turned on. In addition, the displacement drive circuit 110 of the present invention has the source _, so the controller! The factory is outside the T = ke, this part is controlled by the subsequent real = to control the low-end transistor = device control (4) with the level operator she (10) m through the phase adjustment circuit 15 〇 and η to generate the end control signal Sil to control the switch of the ancient annihilation god god = τι. In order to avoid the high-end transistor switch T2 w (four) money (four) this May 201119512 and low-end transistor switch T2 conduction time are staggered from each other. The phase adjustment circuit 150 can adjust the phase of the control signal si2 so that the phase of the high-end control signal Sil generated according to the woven phase signal SC can be maintained at a predetermined phase difference with the phase of the control signal. The example is (10) degrees. In some applications, for example, the controller outputs two phase shifting circuits (10) having the same inverting function, and the phase 150 can be omitted. Referring now to the third figure, it is a "first embodiment" according to the present invention.

Shi Lai ^ Shihe Wei contains her adjustment circuit 150 and the level shift circuit 16〇. The phase adjustment circuit 15A includes R4, R5 and a ΝΡΝ bipolar junction transistor S2. The 8^2 end of the resistors R4 and R5 is returned to the LG. (4) The control signal ί山, the other end of the electric is connected to the gate of the low-end transistor switch T2 (control know) 'Low the low-end transistor switch Τ2 The control signal Si2 is controlled by ^. The other end of the resistor R4 is connected to the double carrier t. The base of the NPN bipolar junction transistor S2 is connected to the driving two vc= collector connected to the level shifting circuit 16A. The level shift circuit 160 includes resistors R 〇, 幻, 、, R3,

The carrier is connected to the transistor S1 and the diodes m and D3. The three-pole connection drive voltage vcc, the negative-end connection resistance R, the PNP double-carrier junction f MSI, and the capacitance C3 ^. Electron ϊ ϊ ϊ ϊ ϊ 及 及 及 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = 今 今Pnp double fresh junction transistor contact; and electricity? = another 5 far one:, the other end of the electric two and the other end of the connection m Α connected to the positive end of the diode D3. The two poles of Leiyang are connected to the high-end transistor to close the T1 and one end of the resistor R3, and the other end of the resistor R3 is connected to the connection point of ¥8. The transmission drive D2 is used as the - energy storage path to store the power of the VLC to the capacitor c3 as the energy storage component. 201119512 can provide the potential of the signal displacement displacement and drive the high-end electric coffee 1 τι: . PNP double-carrier junction transistor S1, electric 曰:, open-pole body D3 as - the first - release energy job's will: = the gate of the high-end transistor switch T1, so that the high-end electricity is the second Release _ (four) so that the charge stored in the high-end electro-crystal two parasitic electric valley can be released through the resistor R3. The phase adjustment circuit 15A and the level shift circuit 16 = are described. The standby control signal Si2 is at a high level (equal to the driving voltage VCc ',

The transistor switch T2 is turned on to make the potential of the connection point vs zero. Since the potential of ί ΐ VS is zero, lower than the driving voltage VCC, the driving voltage VCC is stored in the capacitor C3 until the capacitor C3 (four) is equal to, and the dynamic voltage VCC is subtracted from the forward bias of the diode D2. In addition, since the N double carrier is connected to the potential of the driving voltage cc from the wire of the t M S2 and the emitter of the emitter, the current is not turned off and the current flows through the resistor. Because of the two scales of the resistor R1, that is, the pNp bipolar junction transistor pole and the emitter equipotential, the PNP bipolar junction transistor S1 is also at the cutoff 丄 unable to conduct current through the resistor R3, the resistor R3 Equipotential at both ends. That is to say, the gate and source of the transistor switch T1 are equipotential, and the high-end transistor switch T1 is turned off. At this time, since the PNP bipolar junction transistor S1 and the NPN bipolar junction transistor S2 are both turned off, the power of the driving voltage vcc does not flow through the PNP bipolar junction transistor S1 & NpN dual load. The sub-surface transistor S2 is lost. When the control signal Si2 is turned to the low level (i.e., zero potential), the low side transistor switch T2 is turned off. At this time, the resistor R4 is connected to the zero potential so that the emitter potential of the bipolar junction transistor S2 is lowered to turn on the bipolar junction transistor S2. Due to the conduction of the bipolar junction transistor S2, a current flows through the resistor R1 to form a voltage difference and thereby the PNP bipolar junction transistor si is also turned on. At this time, the voltage of the capacitor C3 is applied to the high-side transistor switch T1 through the PNP bipolar contact transistor S1, the resistor R 〇 and the diode D3 to form a high-side control signal Sil, so that the high-end transistor switch T1 is turned on. When the high-end transistor switch T1 is turned on, even the potential of the 201119512 contact vs rises to the voltage of the input voltage source VIN. Therefore, the potential at the junction of the diode D2 and the electric valley C3 rises to (vin + vcc_vth), causing the diode D2 to be reverse biased and turned off. Vin is the voltage of the input voltage source VIN, Vcc is the voltage of the driving voltage VCC, and Vth is the forward bias voltage of the diode D2. When the control signal Si2 is again turned to the high level, the PNP bipolar contact junction transistor S1 and the NPN dual carrier junction transistor S2 are again turned off. The high-end transistor is turned on, and the charge of the parasitic capacitance of T1 is released through the resistor R3, so that the gate potential drops to be equal to the potential of the connection point VS, and the high-end transistor switch T1 is turned off. Capacitor C3 again stores energy through diode D2, causing the voltage of capacitor C3 to rise again to W Vcc-Vth. As described above, when the low-side transistor switch T2 is turned on, the high-side transistor switch T1 is turned off, and vice versa, so that the high-side transistor switch Ή and the low-end transistor switch T2 are not turned on at the same time and are damaged. In addition, when the transistor switch T1 is turned on, the potential of the connection point between the diode D2 and the capacitor C3 will rise to (Vin+Vcc-Vth). At this time, the diode D2 and the NPN double load with sufficient withstand voltage capability are selected. The sub-junction transistor §2, other components, including the voltage resistance of the controller 100, is only required to be higher than the driving voltage VCc. Therefore, the voltage withstand requirements of the controller and most of the components can be greatly reduced, thereby reducing the cost of the electrical circuit. Please refer to the fourth figure, which is a circuit diagram of a displacement driving circuit according to a second embodiment of the present invention. Compared with the embodiment shown in FIG. 3, the phase adjustment circuit 150 of the present embodiment adds a Zener diode Z1 coupled between the low-end transistor opening T2 and the resistor R5 when the control signal Si2 is low. When the level is changed to the high level [the delay time of the low-end transistor switch T2 is delayed by the avalanche voltage of the Zener diode zi, the high-end transistor switch T1 and the low-end transistor switch T2 can be ensured. It will not be turned on at the same time. In addition, the resistor R3 as the second release path in the level shifting circuit 160' of the present embodiment is replaced by the pNp bipolar junction transistor S3 to accelerate the turn-on of the high-side transistor switch to be turned off and = The cut-off is the speed of conduction. The emitter of the PNP bipolar junction transistor S3 is connected to the gate of 201119512, the base connection resistor 112 is connected to the pNp bipolar ί, and the collector is connected to the connection point VS. The fifth figure is the signal waveform diagram of the embodiment shown in the fourth figure. When the level is low, the gate potential of the low-side transistor switch η is lowered. ΡΝΡ double load? Connect the φ transistor S1 and the ΝΡΝ double contact vs the two-body phantom conduction, so that the high-end transistor switch T1 is turned on, so that the lian ί ^ 3 rises rapidly to the potential close to the input voltage source vin and then the transition between the switch T1 The potential rises to near (Vin+Vcc), and at this time, the high-end transistor switch T1 is turned on and slightly lowered. cutoff. Compared with the potential of the transistor S3, the potential is higher than the emitter potential, so the resistor 113 in the case of the smear is still flowing through the current. The potential Vcc of the driving voltage VCC rises at T2. At this time, the low love T2 conduction causes the potential V3 of the connection point VS to rapidly drop to near S'2 cutoff, and the lightning junction transistor S1 and the double carrier junction transistor are connected to each other! The emitter of the sub-junction transistor S3 is pulled to the same level as the 'PNP bipolar junction junction transistor S3. At this time, the speed of Qing Shuanghe Lai speed.曰曰 曰曰 S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S The surface transistor maintains the I potential of the 3-body switch T1's potential V1 and the connection point vs. the voltage difference vth of the voltage (the difference between the vth and the νώ scale switch τι is in the second place), so It accelerates the speed at which the high-end transistor switch Τ1 turns from off to on. use. The circuit can be integrated into a single-W to match the driving power: the driving device comprises a controller 100, a displacement oscillating module 130 and a switch module 14A for driving the 201119512 to a lamp 120. The displacement driving circuit 1A includes a driving circuit LSD, a phase adjusting circuit 150 and a level shifting circuit 160 for generating two control signals according to the control signal of the controller 1 to control the high-end power of the switch module 14〇 Crystal switch T1 and low-end transistor switch T2. The driving circuit LSD is used to strengthen the driving ability of the control signal issued by the low-side driving pin LO. Therefore, when different low-end transistor switches T2 are used for different application environments, the driving circuit LSD of the displacement driving circuit 110 is driven to cooperate.

Referring to the seventh drawing, a circuit of a displacement driving circuit according to a third embodiment of the present invention is not intended. Compared with the embodiment shown in FIG. 3, the phase adjustment circuit 150" of the embodiment receives the output signal jH of the high-side driving pin H〇 of the controller, and generates a high-end driver through the level shifting circuit 16〇. The signal su drives the transistor at both ends to open τι, and the low-end transistor switch T2 is directly controlled by the output signal SL of the low-side driving pin LO of the controller. Among them, the output signal SH of the high-end driving pin HO is low. The output signal SL of the terminal driving pin L is 180 degrees out of phase. The phase adjusting circuit 15A" includes resistors R6, R7 and a wn bi-carrier junction transistor S4. The resistor R6-end is connected to the high-end driver pin shame, and the other end is connected to the base of the NPN bipolar junction transistor S4. The end of the resistor R7 is connected to the emitter of the NPN bipolar junction transistor, and the other end is grounded. The collector of the bipolar junction transistor S4 is coupled to the base of the PNP bipolar junction transistor S1. When the output signal SL of the low-side driving pin LO is at a low level, the high bit HO = the outgoing signal SH is at a high level. At this time, the low-side transistor switch 曰is4 has a high bipolar junction transistor S1 and a surface bipolar junction junction, and the crystal switch T1 is turned on. When the low-side driver pin ί is at the high level, the high-side driver pin is at the t level. At this time, the low-end transistor switch Τ2 is turned on, and the PNP cone transistor S1 and the (four) double-carrier junction transistor S4, , the driving signal Sil is at a low level (relative to the connection point V two-terminal transistor switch T! Therefore, the low-end transistor of the axis 1 201119512 The signal received by the pole is opposite to the phase of the signal SH received by the displacement drive circuit, but after the phase adjustment by the phase adjustment circuit 15〇, the high-end transistor is turned off, and the T1 is turned off. The received signal Sil is inverted from the signal SL received by the gate of the low-end transistor switch T2, that is, the phase difference is 18 degrees, so that the on-times of the high-end transistor switch Ή1 disk-end transistor switch T2 are staggered from each other. In the level shift circuit 160" of the embodiment, the resistor R0 and the diode D3 in the first release path are changed to the double carrier junction transistor, and the resistor R3 of the second release path is replaced. Replace with pNp double carrier junction transistor 3. When the output signal SL of the low-side driving pin L is low, the output signal sh of the driving pin HO is high. At this time, the pNp double-carrier J-plane transistor S1 and the NPN double-carrier junction surface are both turned on, and the collector potential of the carrier-side transistor S1 is pulled high to make the double carrier. The crystal S5 is turned on and the PNP bipolar junction transistor % is turned off. Therefore, the level shifting circuit 160" outputs the high-level driving signal Sil of the high level. Conversely, when the output signal SH of the chicken foot position HO is at the low level, the pNp double-carrier interface | the crystal S1 and the NPN double carrier The junction transistor % is cut off. At this time, the collector potential of Congshuanglei 5 is pulled by the resistor M to the sub-junction of the connection point VS, and the high-frequency drive of the pnp dual-loaded transistor s5 is turned off. i day signal ^ this 'level shift circuit wins, output high level and 吝 the invention fully meets the patent three elements: novelty, progressive habits. The present invention has been disclosed above in the preferred embodiment, It should be noted that the same as the embodiment 1 ^, ' should be included in the scope of the present invention. Therefore, the Lai Lang of the present invention is defined as the following application plane rider ^ This is a schematic diagram of the circuit of the fluorescent tube driving circuit. The first figure is a circuit block diagram of the lamp tube driving device invented by the county. 201119512 The second figure is a first embodiment according to the present invention. Schematic diagram of the displacement drive circuit. The fourth figure is a second according to the present invention. The circuit diagram of the displacement driving circuit of the embodiment is shown in Fig. 5. The fifth figure is the signal waveform diagram of the embodiment shown in Fig. 4. The sixth figure is the circuit block diagram of the lamp driving device using the displacement driving circuit of the invention. Figure 7 is a schematic diagram of a displacement drive circuit according to a third embodiment of the present invention. < [Description of main component symbols] Previous technology: Electronic stability controller 10 Lamp 20 Spectrum module 30 Switch module 40 High-end Driver circuit HSD Low-side driver circuit LSD High-side driver pin OUT 1 Low-side driver pin OUT2 Luster-side P-type gold-oxide half-field transistor Ml Low-side N-type gold-oxygen half-field transistor M2 Input power VTN Inductor L1 Capacitor C2 The present invention: controller 100 drive circuit 105 displacement drive circuit 110, 11 〇, lamp 120 13 201119512 resonant module 130 switch module 140 phase adjustment circuit 150, 150', 150" level shift circuit 160, 160', 160”

Pin OUT resistor R0, RJ, R2, R3, R4, R5, R6, R7 High-end control signal Sil Control signal Si2 High-end transistor switch T1 Low-side transistor switch T2 Connection point VS Drive voltage VCC Input voltage source VIN Inductance L1 Capacitor C2, C3 NPN double carrier junction transistor S2, S4, S5 control signal Si2

PNP bipolar junction transistor S1, S3 diode D2, D3 connection point VS high-end transistor switch gate potential V1 low-end transistor switch gate potential V2 connection point potential V3 driver circuit LSD high-end driver pin HO low-end driver pin LO output signal SL, SH Zener diode Z1 14

Claims (1)

201119512 VII. Patent application scope: 1. A lamp tube driving device, comprising: an ancient ft group 'concatenated in-between input voltage source and a common potential, 冋知电=body switch and low-end transistor switch ; μ 夕 + 3 system fi is used to control the high-end transistor switch and the low-end transistor switch control the power of the input voltage of the switch group; Xi Zeng: ί Ϊ Ϊ group connected to the switch module, The power for converting the input voltage source is a parent stream output signal to drive a light tube; and the: H shift circuit, the control unit 11, the switch module, and the -displacement i ί ίίί source According to the high-end transistor switch and the low-end transistor open-button potential, the strict reference potential lion and the controller generate a turn-on=change to generate a high-end control signal to control the high-end transistor to open 2. For the lamp driving device described in the third paragraph of the patent scope, the Tf bit adjusting circuit is secreted between the control port and the level shifting circuit, and the control signal is used to make the high-end control signal The phase difference between the control signals is 4 Predetermined retardation value. 3. The predetermined phase difference of the lamp as described in item 2 of the patent application is 180 degrees. Mobile installation hai Hai 4 · Please call the lamp driving step described in the third paragraph of the patent scope, the straight 2-position adjustment circuit includes - ΝΡΝ double carrier junction transistor, the ^ ^ load; one collector The level shifting circuit is switched, a base is connected to the displacement, and a potential is received, and an emitter receives the control signal. 5. For the lamp drive described in item 2 of the patent scope, the 2-position adjustment circuit in the bean comprises a -ΝΡΝ dual-carrier junction transistor, the carrier; Level shift circuit, the emitter of the common 15 201119512 potential base receives the control signal. Phase II, the second tube of the read tube drive, wherein the controller, the second:;; the diode, the Zener diode-negative coupling is coupled to the low-end transistor switch A control terminal.罟, please refer to the lamp driving drive energy path described in item 1 or 2 of the patent scope = include - energy storage path, - capacitance, - - - 5 / test power, pressure source, one of the energy storage paths The second end reduces one of the capacitors, and the second end of the first valley is coupled to the connection point, and one of the first release paths is connected to the first end of the capacitor, the first release path One of the second ends is lightly connected to one of the control terminals of the transistor switch, and one of the second release paths is firstly connected to the control end of the terminal transistor switch, and one of the second release paths One end is transferred to the connection point. The lamp driving device of claim 7, wherein the second energy release path comprises a PNP dual carrier junction transistor for releasing the parasitic capacitance of the high side transistor switch. Charge. 9. The lamp driving device of claim 7, further comprising a low-end driving circuit, receiving the control signal to generate a low-end control signal to control switching of the low-end transistor switch, and the low The on-times of the terminal transistor switch and the high-end transistor switch are staggered from each other. The light-emitting device of the seventh aspect of the invention, wherein the first energy-dissipating path comprises a diode, wherein a positive end of the diode is coupled to the first end of the capacitor, The negative end of the one pole is lightly connected to the control end of the south end transistor switch. 11. For the lamp driving device described in claim 7 of the patent scope, the 201119512 pass: double 4=body'_ discharge the electric power includes 12* kinds of displacement drive circuit for shifting the position of a control signal, ^粑路杈' The first end of the energy storage path is coupled to the displacement reference source to transmit the power of the displacement reference potential source; the flute-two storage, the energy element--___ From the path - the component - the second end _ - reference button, the rib stores the power of the displacement reference potential source; " the component Σί path, the first - Wei path - the first - connected to the energy storage transistor switch; And a control end of the body switch, configured to turn on the first power-discharging path according to the control signal, the first end of the second energy-discharging path, the control end of the crystal switch, and the first The second release energy path - the second end =, the potential, the rib releases the parasitic ^ ^ charge of the first transistor to cut off the first - transistor (four). #悦存之电13·If the displacement drive circuit described in claim 12 of the patent scope, :=2:= the first-release energy path, receiving the control 14. The displacement drive circuit as described in claim 12 And a bipolar contact junction transistor, wherein one of the collectors of the bipolar junction transistor is coupled to the first release path, and a base is coupled to the displacement reference emitter to receive the control signal. I', 15. The displacement drive-containing NPN Weizi junction transistor as described in claim 12 of the patent scope 'the brain Weizi (4) crystal ^ 17 201119512 collector coupled to the first release path, one shot The pole is grounded and a base receives the control signal. 16. The displacement drive circuit of claim 12, wherein the second release path comprises a PNP bipolar junction junction transistor, and one of the PNP bipolar junction junction transistors is coupled to the collector The reference potential, an emitter coupled to the control end of the first transistor switch, and a base coupled to the first release path. 17. The displacement drive circuit of claim 16, wherein the sigma-discharge path comprises an NPN bi-carrier junction transistor, and one of the npn bi-carrier junction transistors is coupled The first end of the energy storage component, the emitter is coupled to the control end of the first transistor switch, and a base is coupled to the base of the pNp bipolar junction transistor. 18. The displacement drive circuit of claim 12, further comprising a control signal for controlling a second transistor switch, and the negative terminal of the t-pole is reduced by the control of the first transistor switch.