WO2010082480A1

WO2010082480A1 - Rectification circuit, control circuit for said rectification circuit, and integrated circuit element containing said circuits

Info

Publication number: WO2010082480A1
Application number: PCT/JP2010/000138
Authority: WO
Inventors: 羽田正二; 高草英博; 岡田實; 和田晴樹
Original assignee: エヌ・ティ・ティ・データ先端技術株式会社
Priority date: 2009-01-13
Filing date: 2010-01-13
Publication date: 2010-07-22
Also published as: JP5547496B2; JP2010187530A

Abstract

A rectification circuit free from low forward voltage drop and reverse current is realized. The circuit is equipped with a first semiconductor element having a first control terminal and one end and the other end of a current path, a second semiconductor element having a second control terminal and one end and the other end of a current path, a third semiconductor element having a third control terminal and one end and the other end of a current path, a first resistive element, a second resistive element, and an inductive element, and is configured such that: an external bias potential is applied to the second control terminal and the third control terminal by the second resistive element; an external direct-current power is supplied to the one end of the current path of the second semiconductor element via the first resistive element, and to the one end of the current path of the third semiconductor element via the second resistive element; the potential at the other end of the second semiconductor element is transmitted to the one end of the first semiconductor element; and the potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element from one end of the inductive element via the other end of the inductive element.

Description

Rectifier circuit, control circuit for the rectifier circuit, and integrated circuit element incorporating these circuits

The present invention relates to a diode circuit, an ORingFET diode application circuit, and the like realized by a low-loss rectifier circuit in which an FET is highly controlled, and to a diode circuit suitable for a rectifier circuit such as a switching power source to which this is applied.

In a conventional rectifying diode, a normal PN-junction silicon diode has a forward voltage drop of about 0.6 V to 1 V. In recent years, in a low voltage drive device adopted in an information processing device. The power loss is great.
Even in the case of a Schottky barrier diode having a relatively small forward voltage drop, the forward voltage drop is about 0.2 V to 0.4 V, and the magnitude of power loss is not significantly different from that of a silicon diode. Further, since this diode has a small reverse withstand voltage, it is not suitable for high voltage rectification.
In the OR diode circuit, a DC power source (for example, a DC / DC converter) having a small power capacity is connected in parallel by a diode to obtain a large power (a large current), or similarly a device connected in parallel is used as a spare device. In other words, a plurality of power supply outputs are connected in parallel through diodes.
Recently, in order to suppress power loss (high heat generation) of information processing devices, these devices are driven at a low voltage. Therefore, since a DC power supply having a low output voltage (12 V is becoming standard) is used, when a normal PN junction silicon diode or Schottky barrier diode is used for the OR diode circuit, the order of the DC power supply voltage is reduced. The rate of directional voltage drop is large, and power loss and waste of voltage are large. Therefore, a low-loss rectifier circuit using a FET with a low conduction resistance can be considered.
Further, when a FET (a field-effect transistor) used in a synchronous rectifier circuit having a rectifying action is controlled, a complicated circuit is obtained. A switching power supply diode used for the same purpose is required to have a high frequency response.

JP 2004-320873 A

The operation of Patent Document 1 is as follows.
(1) When the source potential of the FET 1 is lower than the drain potential or when the terminal 12 is open, the emitter potential of the bipolar transistor 3 is lower than the base potential, so that the bipolar transistor 3 is non-conductive. The collector potential of the transistor 3 is high and the FET 1 becomes conductive.
(2) When the emitter potential of the bipolar transistor 3 is higher than the base potential, the bipolar transistor 3 becomes conductive. Therefore, the collector potential of the bipolar transistor 3 is lowered and the FET 1 becomes non-conductive.
(3) When the emitter potential of the bipolar transistor 3 further increases, the emitter potential of the bipolar transistor 3 in the path of the emitter of the bipolar transistor 3 → the base → the resistance element 9 → the resistance element 6 → the base of the bipolar transistor 2 If a base is applied and the diode 4 is not inserted between the base and emitter of the bipolar transistor 2, the base of the bipolar transistor 2 becomes a high potential and is destroyed.
(4) In the above (3), since the diode 4 is present, the bipolar transistor 2 is not destroyed, but the diode 4 becomes conductive (equivalent to current flowing from the terminal 12 to the terminal 11) and does not function as a backflow prevention circuit.
(5) Application of potential by the resistance element 7 does not function. That is, the circuit of the resistance element 7 may be open.
As described above, the operation of Patent Document 1 is basically different from the operation of the present invention described later.

In view of the above situation, the present invention is a rectifier circuit that reliably prevents backflow, and realizes an ORingFET diode application circuit, a diode circuit suitable for a switching power supply circuit, and the like.

In order to achieve the above object, the present invention has the following configuration.
(1) A rectifier circuit according to claim 1 is:
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element, a second resistance element, and an inductive element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source to one end of the current path of the second semiconductor element via the first resistance element and to one end of the current path of the third semiconductor element via the second resistance element Is configured to flow,
The potential of the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and the potential of the other end of the first semiconductor element is transmitted from one end of the inductive element to the inductive element. Configured to be transmitted to the other end of the third semiconductor element via the other end,
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted,
A current path is formed between one end of the first semiconductor element and the other end of the inductive element.
(2) A rectifier circuit according to claim 2 is:
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element and a second resistance element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source to one end of the current path of the second semiconductor element via the first resistance element and to one end of the current path of the third semiconductor element via the second resistance element Is configured to flow,
A potential at the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and a potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element. Configured to
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted,
A current path is formed between one end of the first semiconductor element and the other end of the first semiconductor element.
(3) A rectifier circuit according to claim 3 is:
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element, a second resistance element, and an inductive element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source flows through one end of the current path of the second semiconductor element through the first resistance element, and
One end of the third semiconductor element is opened,
The potential of the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and the potential of the other end of the first semiconductor element is transmitted from one end of the inductive element to the inductive element. Configured to be transmitted to the other end of the third semiconductor element via the other end,
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted,
A current path is formed between one end of the first semiconductor element and the other end of the inductive element.
(4) A rectifier circuit according to claim 4 is:
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element and a second resistance element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source flows through one end of the current path of the second semiconductor element through the first resistance element, and
One end of the third semiconductor element is opened,
A potential at the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and a potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element. Configured to
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted,
A current path is formed between one end of the first semiconductor element and the other end of the first semiconductor element.
(5) A control circuit according to claim 5 is:
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element, a second resistance element, and an inductive element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source to one end of the current path of the second semiconductor element via the first resistance element and to one end of the current path of the third semiconductor element via the second resistance element Is configured to flow,
The potential of the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and the potential of the other end of the first semiconductor element is transmitted from one end of the inductive element to the inductive element. Configured to be transmitted to the other end of the third semiconductor element via the other end,
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. Part of the rectifier circuit in which the potential of the first control terminal is increased, the current path of the first semiconductor element is conducted, and the current path is between one end of the first semiconductor element and the other end of the inductive element. A control circuit comprising:
The control circuit is configured such that an external bias potential is applied to the second control terminal and the third control terminal by the second resistance element, and between the one end and the other end of the current path of the second semiconductor element. A current supplied by an external DC power source flows between the one end and the other end of the current path of the third semiconductor element via the first resistance element. 2 is configured to be transmitted to one end of the first semiconductor element, and is configured to be transmitted to the other end of the third semiconductor element.
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conducted, and the potential at one end of the second semiconductor element is output as a low potential,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is increased. It is output as a potential.
(6) A control circuit according to claim 6 is:
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element and a second resistance element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source to one end of the current path of the second semiconductor element via the first resistance element and to one end of the current path of the third semiconductor element via the second resistance element Is configured to flow,
A potential at the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and a potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element. Configured to
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted, and one of the rectifier circuits having a current path between one end of the first semiconductor element and the other end of the first semiconductor element. A control circuit constituting a unit,
The control circuit is configured such that an external bias potential is applied to the second control terminal and the third control terminal by the second resistance element, and the first resistance is connected to one end of the current path of the second semiconductor element. A current supplied by an external DC power source flows through one end of the current path of the third semiconductor element via the second resistance element via the element, and the potential at the other end of the second semiconductor element is The first semiconductor element is configured to be transmitted to one end of the first semiconductor element, and the potential of the other end of the first semiconductor element is configured to be transmitted to the other end of the third semiconductor element.
(7) A control circuit according to claim 7 is:
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element, a second resistance element, and an inductive element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source flows through one end of the current path of the second semiconductor element through the first resistance element, and
One end of the third semiconductor element is opened,
The potential of the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and the potential of the other end of the first semiconductor element is transmitted from one end of the inductive element to the inductive element. Configured to be transmitted to the other end of the third semiconductor element via the other end,
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. Part of the rectifier circuit in which the potential of the first control terminal is increased, the current path of the first semiconductor element is conducted, and the current path is between one end of the first semiconductor element and the other end of the inductive element. A control circuit comprising:
The control circuit is configured such that an external bias potential is applied to the second control terminal and the third control terminal by the second resistance element, and the first resistance is connected to one end of the current path of the second semiconductor element. A current supplied from an external DC power source is configured to flow through the element, one end of the third semiconductor element is opened, and the potential at the other end of the second semiconductor element is transmitted to one end of the first semiconductor element. And the potential at the other end of the first semiconductor element is transmitted from one end of the inductive element to the other end of the third semiconductor element through the other end of the inductive element. It is characterized by that.
(8) A control circuit according to claim 8 is:
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element and a second resistance element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source flows through one end of the current path of the second semiconductor element through the first resistance element, and
One end of the third semiconductor element is opened,
A potential at the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and a potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element. Configured to
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted, and one of the rectifier circuits having a current path between one end of the first semiconductor element and the other end of the first semiconductor element. A control circuit constituting a unit,
The control circuit is configured such that an external bias potential is applied to the second control terminal and the third control terminal by the second resistance element, and the first resistance is connected to one end of the current path of the second semiconductor element. A current supplied from an external DC power source is configured to flow through the element, one end of the third semiconductor element is opened, and the potential at the other end of the second semiconductor element is transmitted to one end of the first semiconductor element. The potential of the other end of the first semiconductor element is configured to be transmitted to the other end of the third semiconductor element.
(9) The rectifier circuit according to claim 9 is the rectifier circuit according to any one of claims 1 to 4, wherein one end of the second semiconductor element is a collector of a bipolar transistor, and the other end of the second semiconductor element. Is an emitter of a bipolar transistor, and one end of the third semiconductor element is an emitter of the bipolar transistor, and the other end of the third semiconductor element is a collector of the bipolar transistor.
(10) The rectifier circuit according to claim 10 is the rectifier circuit according to any one of claims 1 to 4, wherein one end of the second semiconductor element is an emitter of a bipolar transistor, and the other end of the second semiconductor element. Is a collector of the bipolar transistor, wherein one end of the third semiconductor element is an emitter of the bipolar transistor, and the other end of the third semiconductor element is a collector of the bipolar transistor.
(11) The control circuit according to claim 11 is the control circuit according to any one of claims 5 to 8, wherein one end of the second semiconductor element is a collector of a bipolar transistor, and the other end of the second semiconductor element Is an emitter of a bipolar transistor, and one end of the third semiconductor element is an emitter of the bipolar transistor, and the other end of the third semiconductor element is a collector of the bipolar transistor.
(12) A control circuit according to claim 12 is the control circuit according to any one of claims 5 to 8, wherein one end of the second semiconductor element is an emitter of a bipolar transistor, and the other end of the second semiconductor element. Is a collector of the bipolar transistor, wherein one end of the third semiconductor element is an emitter of the bipolar transistor, and the other end of the third semiconductor element is a collector of the bipolar transistor.
(13) An integrated circuit device according to a thirteenth aspect is characterized in that the rectifier circuit according to any one of the first to fourth aspects, the ninth aspect, and the tenth aspect is incorporated.
(14) An integrated circuit device according to a fourteenth aspect is characterized in that the control circuit according to any one of the fifth to eighth, eleventh and twelfth aspects is incorporated.

(A) Since the rectifier circuit according to the present invention uses an FET for the rectification current path, the forward voltage drop due to rectification is extremely small, and the power loss is extremely low.
(B) A rectifier circuit according to the present invention uses an FET as a rectifier current path, and a control circuit in which two bipolar transistors constitute a potential of a portion corresponding to the anode of the rectifier circuit and a potential of a portion corresponding to the cathode of the rectifier circuit However, since the FET is controlled to be conductive / non-conductive, current does not flow backward from the cathode to the anode.
(C) In the control circuit according to the present invention, the potential of the portion corresponding to the anode of the rectifier circuit and the potential of the portion corresponding to the cathode of the rectifier circuit are compared by the control circuit formed by the two bipolar transistors, and the FET is turned on / off. Since conduction is controlled, current does not flow backward from the cathode to the anode of the rectifier circuit.
(D) In the rectifier circuit according to the present invention, since the inductor is inserted in the portion corresponding to the other end of the FET and the cathode of the rectifier circuit, the current from the cathode of the rectifier circuit to the anode is rectified even when rectifying a high-frequency current. Will not flow backwards.

These are the circuit block diagrams which show 1st Embodiment of the rectifier circuit by this invention, and a control circuit. These are the circuit block diagrams which show 2nd Embodiment of the rectifier circuit by this invention, and a control circuit. These are the circuit block diagrams which show 3rd Embodiment of the rectifier circuit by this invention, and a control circuit. These are the circuit block diagrams which show 4th Embodiment of the rectifier circuit by this invention, and a control circuit. These are the circuit block diagrams which show 5th Embodiment of the rectifier circuit by this invention, and a control circuit. These are the circuit block diagrams which show 6th Embodiment of the rectifier circuit by this invention, and a control circuit. These are the circuit block diagrams which show 7th Embodiment of the rectifier circuit by this invention, and a control circuit. These are the circuit block diagrams which show 8th Embodiment of the rectifier circuit by this invention, and a control circuit. These are the circuit block diagrams which show 9th Embodiment of the rectifier circuit by this invention, and a control circuit.

(1) First Embodiment (1-1) Circuit Configuration FIG. 1 shows a rectifier circuit according to a first embodiment of the present invention and a first semiconductor element constituting a rectified current path in the rectifier circuit. It is a circuit block diagram which shows the control circuit which controls N channel FETQ1.
In FIG. 1, a portion surrounded by a broken line is the control circuit. The control circuit includes an NPN bipolar transistor Q2 that is a second semiconductor element, an NPN bipolar transistor Q3 that is a third semiconductor element, a resistance element R1 that is a first resistance element, and a resistance element R2 that is a second resistance element. .

The circuit configuration of the present invention will be described below with reference to FIG.
There is a terminal T1 (corresponding to an anode referred to as a diode) for inputting the positive potential of the DC power supply, and a terminal T2 (corresponding to a cathode referred to as a diode) for outputting the positive potential of the DC power supply.
The terminal S1 is connected to the source S of the FET Q1, the drain D of the FET Q1 is connected to one end of an inductor L, which is an inductive element, and the other end of the inductor L is connected to the terminal T2. The current flows from the terminal T1 to the terminal T2, that is, from the source S to the drain D of the FET Q1. The current from the drain D to the source S is controlled to be cut off.

Further, a collector C of an NPN bipolar transistor Q2 which is a second semiconductor element is connected to the terminal T1, and a collector C of an NPN bipolar transistor Q3 which is a third semiconductor element is connected to the terminal T2.

The base B of the bipolar transistor Q2 and the base B of the bipolar transistor Q3 are connected, and one end of a resistance element R2 that is a second resistance element is connected to this connection portion, and the other end of the resistance element R2 is connected to both bipolar transistors Q2, Q3. Is connected to a terminal T3 to which a DC power supply for supplying a bias potential is applied to the base B.

The emitter E of the bipolar transistor Q3 is connected to one end of the resistance element R2. That is, the base and emitter of the bipolar transistor Q3 are short-circuited.
The emitter E of the bipolar transistor Q2 is connected to one end of a resistance element R1 which is a first resistance element, and the other end of the resistance element R1 is applied with a DC power supply for supplying the emitter E potential of the bipolar transistor Q2 and the gate potential of the FET Q1. Connected to terminal T3.
The bipolar transistor Q3 is used as a collector C ground, but since an external DC power supply potential is applied to the terminal T2, a collector whose breakdown voltage is higher than that of the emitter is connected to the terminal T2. The bipolar transistor Q2 is also used as the collector C ground so that the operating characteristics of both bipolar transistors Q2 and Q3 are made uniform.

The emitter E of the bipolar transistor Q2 is connected to the gate G of the FET Q1, and the collector C of the bipolar transistor Q2 is connected to the source of the FET Q1.

A circuit surrounded by a broken line composed of the bipolar transistor Q2, the bipolar transistor Q3, the resistor element R1, and the resistor element R2 is the control circuit of the present invention which is a part of the rectifier circuit of the present invention.

(1) First Embodiment (1-2) Circuit Operation The circuit operation of the rectifier circuit and the control circuit according to the first embodiment of the present invention will be described with reference to FIG.

The rectifier circuit in the circuit of FIG. 1 of the present invention comprises a diode having the terminal T1 as an anode and the terminal T2 as a cathode, and the control circuit discriminates the voltage polarity applied between the terminals T1 and T2, and the gate of the FET Q1. The potential applied to G is controlled to control the conduction / non-conduction of the FET Q1.

In the description of the circuit operation of the present invention, the potential of each element is the direct current positive electrode applied to the terminal T3, with the emitter potential of the bipolar transistor Q2 being the reference potential (= the potential of the terminal T1, the source potential of the FET Q1). Operates with sex potential.
One end of a DC power source for load operation is connected to the terminal T1, and one end of the load is connected to the terminal T2. Although not shown in the circuit of FIG. 1, the other end of the DC power supply and the other end of the load are connected by another current path to form a current path of the DC power supply and the load.
In the description of the present invention, one end of the DC power source has a positive potential and the other end of the DC power source has a negative potential.

(1-2-1) Outline of operation for making FET Q1 non-conductive Assuming that the potential of the terminal T1 is V1 and the potential of the terminal T2 is V2, the bipolar transistor Q3 is nonconductive or slightly shallowly conductive when V1 ≦ V2, Since the bipolar transistor Q2 is surely turned on, the potential of the emitter E of the bipolar transistor Q2 is lowered by the voltage drop due to the resistance element R1, and is approximately 0V (operation of the control circuit). The FET Q1 is non-conductive due to the gate potential of the FET Q1 to which this potential is transmitted (the operation of the rectifier circuit is combined with the operation of the control circuit).
That is, no current flows from the drain D to the source S of the FET Q1. Accordingly, the circuit in FIG. 1 operates with the terminal T2 as the cathode of the diode and the terminal T1 as the anode of the diode.

(1-2-2) Outline of operation for making FET Q1 conductive On the contrary, when V1> V2, the bipolar transistor Q3 is conductive and the bipolar transistor Q2 is nonconductive, so there is no voltage drop due to the resistance element R1, and the bipolar transistor Q2 The potential of the emitter E rises to the DC power supply voltage applied to the terminal T3 (operation of the control circuit), and the FET Q1 is turned on by the gate potential of the FET Q1 to which this potential is transmitted (in conjunction with the operation of the control circuit). The operation of the rectifier circuit.)
That is, a current flowing from the source to the drain of the FET Q1 flows. Therefore, the circuit of FIG. 1 operates with the terminal T1 as the anode of the diode and the terminal T2 as the cathode of the diode.

As supplemented in the above description, when the FET Q1 is non-conductive, the current from the drain D to the source S of the FET Q1 does not flow, but the current from the source to the drain flows by the body diode of the FET Q1. Is possible. However, since there is a precondition that the FET Q1 is non-conductive when V1 ≦ V2, there is no current from the source toward the drain.

Further, when the FET Q1 is conductive, a current flowing from the source S to the drain D of the FET Q1 flows, but a current flowing from the drain D to the source S of the FET Q1 can also flow. However, since there is a precondition that the FET Q1 becomes conductive when V1> V2, there is no current from the drain of the FET Q1 toward the source.
When the FET Q1 is conductive, a current flowing from the source to the drain direction can be flowed by the extremely low conductive resistance of the FET Q1 regardless of the body diode of the FET Q1, which is far more advantageous than the rectification by the PN junction diode.

Hereinafter, the first embodiment of the present invention will be described in detail with reference to FIG. However, there are preconditions of the following equations (1-1) and (1-2).
I _EC3 / hfe3> I _EC2 / hfe2... Formula (1-1)
Formula (1-1) represents I _BC3 > I _BC2 .
hfe2 · r1> hfe3 · r2 ··· formula (1-2)
Expression (1-1) is equivalent to Expression (1-2).
When the conditional expression of the case is expanded based on the expression (1-2), the following expression can be considered.
When hfe2 = hfe3, r1> r2 (2)
When hfe2> hfe3, r1 ≧ r2 (3)
When hfe2 >> hfe3, r1 <r2 (4)
The case where hfe2 <hfe3 is not considered here.

However, hfe2 is a current amplification factor when the collector C of the bipolar transistor Q2 is grounded, and hfe3 is a current amplification factor when the collector C of the bipolar transistor Q3 is grounded.
I _BC2 is the base current of the bipolar transistor Q2, and I _BC3 is the base current of the bipolar transistor Q3.
_IEC2 is the emitter current of the bipolar transistor Q2, and _IEC3 is the emitter current of the bipolar transistor Q3.
r1 is the resistance value of the resistance element R1, and r2 is the resistance value of the resistance element R2.
The collector potential of the bipolar transistor Q2 is Vc2, the collector potential of the bipolar transistor Q3 is Vc3, and Vc2 = V1 and Vc3 = V2.

Condition: A1
In Vc2 = Vc3 (the state where V1 = V2, the collector potential of the bipolar transistor Q2 = the collector potential of the bipolar transistor Q3), the bipolar transistor Q3 conducts slightly shallower and the bipolar transistor Q2 conducts reliably.

In the circuit of FIG. 1, since hfe2> hfe3, Expression (3) is applied.
The reason why hfe2> hfe3 is that, as described above, as shown by I _BC3 > I _BC2 , a large base current of the bipolar transistor Q3 is supplied and a low base current of the bipolar transistor Q2 is supplied.
However, the bipolar transistors Q2 and Q3 are examples in which they are substantially the same hfe in the same ground circuit (when both transistors are connected to the collector ground or the emitter ground). Further, it is preferable to use substantially the same temperature characteristics.

In FIG. 1, when “hfe2> hfe3, r1 ≧ r2 (formula (3)” is satisfied, and the potential between the collector of the bipolar transistor Q2 and the collector of the bipolar transistor Q3 is substantially the same. Thus, I _BC3 > I _BC2 . Therefore, the base forward voltage V _BC3 for conducting the bipolar transistor Q3 is V _BC3 > V _BC2 .

In the above state, since the bases of the bipolar transistor Q2 and the bipolar transistor Q3 are connected, both base potentials are balanced so that V ′ _BC3 = V ′ _BC2 ,
In the state of V _BC3 > V ′ _BC3 = V ′ _BC2 > V _BC2 , the potential settles to an intermediate potential between V _BC3 and V _BC2 .
Therefore, the base forward voltage V _BC3 for conducting the bipolar transistor Q3 is lower than the potential V _BC3 required for conducting the bipolar transistor Q3, and therefore I _BC3 and I _EC3 are normally applied to the base B of the bipolar transistor Q3. Less than when the base forward voltage _VBC3 is applied.

Although I _BC3 and I _EC3 decrease due to the balance of the base potentials of both bipolar transistors, V ′ _BC3 = V ′ _BC2 , the current flowing through the resistance element R2 is Ir2 = V3 / r2, which is limited by r2 and does not change. So
As much I _BC2 flows as I _BC3 and I _EC3 decrease, and the bipolar transistor Q2 can maintain a reliable conduction state.

However, V _BC2 is the base potential with respect to the collector potential of the bipolar transistor Q2,
V _BC3 is a base potential with respect to the collector potential of the bipolar transistor Q3.
The base forward voltage _VBC2 is a voltage at which the emitter E and the collector C of the bipolar transistor Q2 are conducted.
The base forward voltage _VBC3 is a voltage that conducts between the emitter E and the collector C of the bipolar transistor Q3.

When I _BC3 > I _BC2 is further explained,
hfe2 is represented by hfe2 = I _EC2 / I _BC2 ,
hfe3 is represented by hfe3 = I _EC3 / I _BC3 .
I _EC2 is represented by a reciprocal function of r1, I _EC3 is represented by a reciprocal function of r2,
I _EC3 / hfe3> I _EC2 / hfe2... Formula (1-1),
In the case of hfe2> hfe3, r1 ≧ r2...
There is a tendency of I _EC3 ≧ I _EC2 , and further, due to the relationship of hfe2> hfe3 in formula (3),
As a result, I _BC3 > I _BC2 .
Since I _BC3 > I _BC2 , the base forward voltage V _BE2 of the bipolar transistor Q2 through which I _BC2 with a small amount of current flows is smaller than the base forward voltage V _{BC3 of the} bipolar transistor Q3 through which I _BC3 with a large amount of current flows. .
Therefore, as described above, V _BC3 > V _BC2 is _satisfied .

I _{EC3 ≈V3} / r2 and I _EC2 = V3 / r1. However, V3 is a DC power supply potential applied to the terminal T3.
Here, I _{EC3 ≈V3} / r2, and I _EC3 = V3 / r2 is not caused, because the base current is caused to flow through the bipolar transistors Q2 and Q3 through the resistance element R2.

Since the bipolar transistor Q2 is reliably turned on, the collector C potential of the bipolar transistor Q2 is reduced to about 0 V, and the FET Q1 is non-conductive at the gate G of the FET Q1 to which this potential is applied. For this reason, no current flows from the drain D of the FET Q1 to the source S, and it has a function of blocking the reverse current of the diode.

Condition: B1
In Vc2 <Vc3 ′ (the state where V1 <V2; the collector potential of the bipolar transistor Q2 <the collector potential of the bipolar transistor Q3), the bipolar transistor Q3 is non-conductive and the bipolar transistor Q2 is reliably conductive.
If Vc2 <Vc3 ′ is expressed in another way, Vc2 <Vc3 ′ can be expressed as Vc2 <Vc3 + Vα.
The above condition: In addition to the description of A1, when the potential of the collector C of the bipolar transistor Q3 rises from Vc3 to Vα, the bipolar transistor Q3 maintains the predetermined potential between its collector C and base B, so that the base potential is Vα Will rise. For this reason, the base B potential of the bipolar transistor Q2 which is the same potential as the base B of the bipolar transistor Q3 further increases, and the bipolar transistor Q2 is surely turned on.

Therefore, the potential of the collector C of the bipolar transistor Q2 decreases to approximately 0 V, and the FET Q1 is non-conductive at the gate G of the FET Q1 to which this potential is applied. For this reason, no current flows from the drain D of the FET Q1 to the source S, and it has a function of blocking the reverse current of the diode.

The reason why the bipolar transistor Q3 becomes non-conductive is that, for the base B of the bipolar transistor Q3, the reverse bias voltage is applied from the collector side, and the base current does not flow.

Condition: C1
In Vc2> Vc3 ″ (the state of V1> V2, the collector potential of the bipolar transistor Q2> the collector potential of the bipolar transistor Q3), the bipolar transistor Q3 is turned on and the bipolar transistor Q2 is turned off.
In other words, Vc2> Vc3 ″ can be expressed as Vc2> Vc3-Vβ.

In addition to the description of the condition A1, when the potential of the collector C of the bipolar transistor Q3 is lowered by Vβ from Vc3, the base potential is lowered by Vβ in order to maintain the predetermined self-collector C and base B potential. For this reason, the base B potential of the bipolar transistor Q2 which is the same potential as the base B of the bipolar transistor Q3 decreases, and the bipolar transistor Q2 becomes non-conductive.

Therefore, the emitter E potential of the bipolar transistor Q2 rises and becomes the DC power supply potential applied to the terminal T3, and the FET Q1 becomes conductive at the gate potential of the FET Q1 to which this potential is applied. Therefore, a current flows from the source S of the FET Q1 to the drain D, the source S of the FET Q1 has a function of an anode of the diode, and the drain D of the FET Q1 has a function of a cathode of the diode.

The reason why the bipolar transistor Q3 becomes conductive is that the forward bias voltage is applied from the collector C side to the base B of the bipolar transistor Q3, and the base current flows sufficiently.

In the circuit of FIG. 1, the reason why the inductor L, which is an inductive element, is inserted between the drain D of the FET Q1 and the terminal T2 is to improve the frequency characteristics related to current path interruption that makes the FET Q1 of the circuit non-conductive. . That is, rectification can be performed without backflow in rectification of high-frequency current. That is, it corresponds to a high frequency.

This operating principle is that when the potential applied between the terminals T1 and T2 transitions from V1> V2 to V1 ≦ V2, the collector potential of the bipolar transistor Q3 immediately becomes V2, but the inductor L causes the drain of the FET Q1 to This is because a delay occurs in the applied potential V2, and time is taken until the FET Q1 becomes non-conductive.

If the inductor L is not inserted in the drain D-side current path of the FET Q1 in the current path in which the FET Q1 is disposed, the potential transfer due to the charge discharge time of each element, particularly the bipolar transistors Q2 and Q3 and the gate of the FET Q1. This causes a time delay for the FET Q1 to transition from conduction to non-conduction.
Therefore, the current flows backward from the drain D to the source S of the FET Q1 while the FET Q1 is in the conductive state.

When the potential V2 from another power source is applied to the terminal T2, as described above, when the delay from the conduction to the non-conduction of the FET Q1 and the condition that the potential V1 of the terminal T1 is V1 <V2 overlap. A current flows to the power supply side connected to the terminal T1 by the potential V2 applied to the terminal T2.

When such a situation occurs, the function as a rectifier circuit is lost. The inductor L has a function of delaying transmission of the potential V2 applied to the terminal T2 to the drain D of the FET Q1. This inductor L can be adapted to a rectifier circuit such as a switching power supply to which a harmonic pulse potential is applied.

(2) Second Embodiment (2-1) Circuit Configuration FIG. 2 shows a rectifier circuit according to a second embodiment of the present invention and a first semiconductor element constituting a rectified current path in the rectifier circuit. It is a circuit block diagram which shows the control circuit which controls N channel FETQ1.

In FIG. 2, a portion surrounded by a broken line is the control circuit. The control circuit includes an NPN bipolar transistor Q2 as a second semiconductor element, an NPN bipolar transistor Q3 as a third semiconductor element, a resistance element R1 as a first resistance element, and a resistance element R2 as a second resistance element. .

Hereinafter, the difference between the circuit configuration of the second embodiment of the present invention and FIG. 1 which is the first embodiment of the present invention will be described with reference to FIG.

There is a terminal T1 (corresponding to an anode referred to as a diode) for inputting the positive potential of the DC power supply, and a terminal T2 (corresponding to a cathode referred to as a diode) for outputting the positive potential of the DC power supply.
There is a terminal T1 ′ for inputting the negative potential of the DC power supply and a terminal T2 ′ for outputting the negative potential of the DC power supply.

However, in the present invention, since a diode is formed between the terminal T1 and the terminal T2,
The terminal T2 ′ is not essential and may not be present.
A DC power supply to be supplied to the load is input between the terminals T1 and T1 ′, and this power supply is diverted to the power supply for operating the control circuit. In FIG. 2, as shown in FIG. If a separate power supply for operating the control circuit is prepared, the terminal T1 ′ may be omitted in the present invention.

The terminal T1 includes a collector of an NPN bipolar transistor Q2 as a second semiconductor element, one end of a capacitor C as a capacitive element, and a PDn cathode of a series circuit of photodiodes PD1 to PDn as light receiving elements constituting a DC power supply for a control circuit. And an anode of a light emitting diode LED which is a light emitting element for exciting the photodiode.
The terminal T1 ′ and the terminal T2 ′ are connected, and a cathode of a constant current diode RD that is a constant current element is connected to the connection portion, and an anode of the constant current diode RD is connected to a cathode of the light emitting element LED.

The anode of the photodiode PD1, the other end of the capacitor C, the other end of the resistance element R1 that is a resistance element, and the other end of the resistance element R2 that is a resistance element are connected.
In FIG. 2 of the second embodiment of the present invention, the inductor L which is the inductive element shown in FIG. 1 of the first embodiment does not exist, and the drain D of the FET Q1 which is the first semiconductor element Terminal T2 is directly connected.

The above is the difference between FIG. 2 and FIG.

2, similarly to FIG. 1, an NPN bipolar transistor Q2 that is a second semiconductor element surrounded by a broken line, an NPN bipolar transistor Q3 that is a third semiconductor element, and a resistance element R1 that is a resistance element The same is true in that the control circuit configured by the resistance element R2 that is a resistance element and the N-channel FET Q1 that is the first semiconductor element constitute a rectification current path and the rectification circuit as a whole.

Therefore, the reference numerals used in the circuit of FIG. 2 which is the second embodiment are the same as the reference numerals of FIG. 1 of the first embodiment, and the description of the circuit configuration uses the description in FIG. , Omit duplicate explanations.

(2) Second Embodiment (2-2) Circuit Operation The circuit operation of the rectifier circuit and control circuit according to the second embodiment of the present invention will be described with reference to FIG.

In FIG. 2, the difference from FIG. 1 is a light receiving element that emits light from a light emitting diode LED that is a light emitting element by using a DC power source applied between the terminal T1 and the terminal T1 ′, and receives this light emission. The control circuit operation power supply voltage is generated by the photodiodes PD1 to PDn.

In the above points, there is no difference in the operation of the control circuit and the rectifier circuit in FIG.

Another difference is that the inductor L does not exist in FIG. Therefore, in FIG. 1, the potential V2 of the terminal T2 is directly applied to the collector C of the bipolar transistor Q3, whereas it is applied to the drain D of the FET Q1 through the inductor L. In FIG. The potential V2 of the terminal T2 is applied directly to the collector C of the bipolar transistor Q3 and to the drain D of the FET Q1.

Therefore, the absence of the inductor L means that if the collector potential Vc3 of the bipolar transistor Q3 and the drain potential Vd of the FET Q1 in FIG. 1 are Vc3 ≠ Vd
In FIG. 2, Vc3 = Vd. Even in this difference, the circuit operation principle of the control circuit and the FET Q1, which is the rectification current path, is the same.

However, the effect of inserting the inductor L, which is the feature described in the first embodiment, does not occur. However, there is no problem if the application does not require a rectifying operation at a high frequency as described in the first embodiment.

As described above, Vc3 ≠ Vd in FIG. 1, and Vc3 = Vd in FIG. Even if there is such a difference, the circuit operation principle of the control circuit and the FET Q1 that is the rectification current path is the same. Therefore, the control circuit in FIG. 2 makes the FET Q1 conductive / non-conductive like the control circuit in FIG. Control to turn on is possible.

Therefore, the description of the circuit operation of FIG. 2 according to the second embodiment can be applied to the description of the circuit operation of FIG. 1 according to the first embodiment. Therefore, the description of the circuit operation in FIG. 1 is used for the description of the circuit operation in FIG. 2, and the overlapping description is omitted.

(3) Third Embodiment (3-1) Circuit Configuration FIG. 3 shows a rectifier circuit according to a third embodiment of the present invention and N which is a first semiconductor element constituting a rectified current path in the rectifier circuit. It is a circuit block diagram which shows the control circuit which controls channel FETQ1.

In the circuit of FIG. 3 in the third embodiment, the inductor L, which is an inductive element, is removed from the circuit of FIG. 1 in the first embodiment, and the terminal T2 and the drain D of the FET Q1 are directly connected. In this circuit, the connection between the base B and the emitter E of the transistor Q3 is opened. That is, the emitter of the bipolar transistor Q3 is open.
Therefore, the reference numerals of the elements in the circuit of FIG. 3 are the same as the reference numerals of the elements of the circuit in FIG. 1, and the description of the circuit configuration in FIG.

(3) Third Embodiment (3-2) Circuit Operation The circuit operation of the rectifier circuit and the control circuit according to the third embodiment of the present invention will be described with reference to FIG.

In the circuit of FIG. 3 in the third embodiment, the inductor L, which is an inductive element, is removed from the circuit of FIG. 1 in the first embodiment, and the terminal T2 and the drain D of the FET Q1 are directly connected. In this circuit, the connection between the base B and the emitter E of the transistor Q3 is opened.

The circuit of FIG. 3 which is the third embodiment of the present invention is a circuit in which the base B and the emitter E of the bipolar transistor Q3 are not connected, that is, the circuit of FIG. 3 in the third embodiment of the present invention. This is the reason why the control circuit surrounded by the broken line is different from the circuit operation of the control circuit surrounded by the broken line in FIG. 1 according to the first embodiment of the present invention.
Also in the description of the third embodiment of the present invention, the same symbols are used for symbols such as potential value, current value, current amplification factor, and resistance value used in the description of the first embodiment. The significance is the same.

Therefore, in the description of the circuit operation of FIG. 3, the description of the operation of the inductor L, which is an inductive element, is deleted from the description of the circuit operation of FIG. 1, and the connection between the base B and the emitter E of the bipolar transistor Q3 is opened. The operation will be mainly described, and the description of FIG. 1 will be used for the parts that are the same as those in FIG. 1, and the overlapping description will be omitted.

In FIG. 3, since there is no inductor L, there is no need to improve the frequency characteristics related to the current path interruption (the FET Q1 is made non-conductive) in the operation description in FIG. It is suitable for an ORingFET diode circuit for connecting DC power supplies in parallel.

In the circuit of FIG. 3, since the base B and the emitter E of the bipolar transistor Q3 are open, the bipolar transistor Q3 functions as a PN junction diode with the base B being P-type and the collector C being N-type.

(3-2-1) Outline of operation for making FETQ1 non-conducting When the potential of the terminal T1 is V1 and the potential of the terminal T2 is V2, when V1 ≦ V2, the collector potential is between the base B and the collector C of the bipolar transistor Q3. A standard PN junction potential difference of base forward voltage V ″ _BC3 = about 0.6 V is generated with reference to the base potential of bipolar transistor Q2 and bipolar transistor Q2 having a common base potential and bipolar transistor Q2 is surely turned on. .

In the circuit of FIG. 3, since the emitter current of the bipolar transistor Q3 does not flow,
If I _BC3 + I _BC2 = V3 / r2 and V3 / r2 is constant, I _BC3 is larger when the emitter current of bipolar transistor Q3 does not flow than when the emitter current of bipolar transistor Q3 flows. .

Accordingly, since a current flows through the current path of the bipolar transistor Q2, the potential of the emitter E of the bipolar transistor Q2 is reduced to approximately 0 V due to a voltage drop caused by the resistance element R1 (operation of the control circuit).
The FET Q1 is non-conductive due to the gate potential of the FET Q1 to which this potential is transmitted (operation of the rectifier circuit in addition to the operation of the control circuit).
That is, no current flows from the drain D to the source S of the FET Q1. Therefore, the circuit of FIG. 3 operates with the terminal T1 as the anode of the diode and the terminal T2 as the cathode of the diode.

(3-2-2) Outline of Operation for Making FET Q1 Conductive Conversely, when V1> V2, the potential at the base B of the bipolar transistor Q3 is lowered as in the first embodiment, and the bipolar transistor Q2 is turned off. Therefore, there is no voltage drop due to the resistance element R1, the potential of the emitter E of the bipolar transistor Q2 rises to the DC power supply voltage V3 applied to the terminal T3 (operation of the control circuit), and the gate of the FET Q1 to which this potential is transmitted The FET Q1 is turned on by the potential (operation of the rectifier circuit together with the operation of the control circuit).
That is, a current flowing from the source to the drain of the FET Q1 flows. Therefore, the circuit of FIG. 3 operates with the terminal T1 as the anode of the diode and the terminal T2 as the cathode of the diode.

The third embodiment of the present invention will be described in detail below with reference to FIG. However, there is a precondition of the following equation (5).
I ′ _BC3 > I _EC2 / hfe2 (5)
I ′ _BC3 > I _BC2 Formula (6)
Formula (5) means Formula (6). That is, the base current I _BC2 of the bipolar transistor Q2 is set smaller than the base current I ′ _BC3 of the bipolar transistor Q3.

The emitter current I _EC2 of the bipolar transistor Q2 is I _EC2 = V3 / r1, and when the current amplification factor of the bipolar transistor Q2 is hfe2, the base current I _BC2 of the bipolar transistor Q2 is I _BC2 = V3 / r1 / hfe2. Become.
Since the sum of the base current I ′ _BC3 of the bipolar transistor Q3 and the base current I _BC2 of the bipolar transistor Q2, I ′ _BC3 + I _BC2 is limited by V3 / r2,
I ′ _BC3 + I _BC2 = V3 / r2. (I ′ _BC3 + V3 / r1 / hfe2) = V3 / r2 (7)

However, I ′ _BC3 is the base current of the bipolar transistor Q3 when the emitter E of the bipolar transistor Q3 is opened. V ″ _BC3 is a base potential with respect to the collector potential of the bipolar transistor Q3 when the emitter E of the bipolar transistor Q3 is opened.

Condition: A3
Vc2 = Vc3 (V1 = V2 state. Source potential of FETQ1 = drain potential. Collector potential of bipolar transistor Q2 = collector potential of bipolar transistor Q3.)
Since the base forward voltage V ″ _{BC3 of the} bipolar transistor Q3 is about 0.6V (the forward voltage of a standard PN junction diode), the bipolar transistor Q3 has a base forward voltage V _BC2 of the bipolar transistor Q2 lower than this voltage. The bipolar transistor Q2 is reliably turned on by the base potential of the bipolar transistor Q2 having the common base potential.

From the precondition, I ′ _BC3 > I _BC2 (6), the description of FIG. 1 in the first embodiment is used, and V ″ _BC3 > V ″ ′ _BC3 = V ″ _BC2 > _VBC2 If the collector potential of the bipolar transistor Q2 = the collector potential of the bipolar transistor Q3 (the source potential of the FET Q1 = the drain potential), in the bipolar transistor Q2 and the bipolar transistor Q3 having the common base potential, the base of the bipolar transistor Q2 at this time potential _{V "BC2} is higher than the base forward voltage _{V BC2} of the bipolar transistor Q2 defined by the base current _I BC2 ₌ _I EC2 / _hfe2 bipolar transistor _{_{Q2 (V"BC2> V BC2}} ).
A potential (V " _BC2 = V"' _BC3 ) synthesized by the base forward voltage V _BC2 of the bipolar transistor Q2 and the base forward voltage V ″ _{BC3 of the} bipolar transistor Q3 is set so that the bipolar transistor Q2 becomes sufficiently conductive. To obtain the base forward voltage.

However, V ″ ′ _BC3 and V ″ _BC2 are base potentials in the condition A3 of the bipolar transistors Q3 and Q2 having the base B as a common potential, respectively.
That is, V ″ _BC2 is a potential in which the potentials V ″ _BC3 and V _BC2 are balanced.
Since the bases of the bipolar transistor Q2 and the bipolar transistor Q3 are connected, both base potentials are set to V ″ ′ _BC3 = V ″ _BC2 .
V ″ _BC3 > V ″ ′ _BC3 = V ″ _BC2 > V _BC2 is balanced.

Thus, since the bipolar transistor Q2 is surely turned on, the emitter potential of the bipolar transistor Q2 is reduced to about 0 V, and the FET Q1 is non-conductive at the gate of the FET Q1 to which this potential is applied. For this reason, no current flows from the drain D of the FET Q1 to the source S, and it has a function of blocking the reverse current of the diode.

Condition: B3
When Vc2 <Vc3 ′ (V1 <V2 state. Collector potential of bipolar transistor Q2 <collector potential of bipolar transistor Q3. Source potential of FET Q1 <drain potential), bipolar transistor Q2 is surely turned on.
If Vc2 <Vc3 ′ is expressed in another way, Vc2 <Vc3 ′ can be expressed as Vc2 <Vc3 + Vα.
In addition to the description of the above condition A3, when the potential of the collector C of the bipolar transistor Q3 rises from Vc3 to Vα, the bipolar transistor Q3 maintains the potential difference between its own collector C and base B, so the base potential rises by Vα. Will do. For this reason, the base B potential of the bipolar transistor Q2 which is the same potential as the base B of the bipolar transistor Q3 further increases, and the bipolar transistor Q2 is surely turned on.

Therefore, the potential of the emitter E of the bipolar transistor Q2 decreases to about 0 V, and the FET Q1 is non-conductive at the gate of the FET Q1 to which this potential is applied. For this reason, no current flows from the drain D of the FET Q1 to the source S, and it has a function of blocking the reverse current of the diode.

Condition: C3
Vc2> Vc3 "
This is V1> V2 (the collector potential of the bipolar transistor Q2> the collector potential of the bipolar transistor Q3. The source potential of the FET Q1> the drain potential), and the bipolar transistor Q2 becomes non-conductive.
In other words, Vc2> Vc3 ″ can be expressed as Vc2> Vc3-Vβ.
In addition to the description of the above condition A3, when the potential of the collector C of the bipolar transistor Q3 is lowered by Vβ from Vc3, the base potential is lowered by Vβ in order to maintain a predetermined potential difference between the collector C and base B. For this reason, the base B potential of the bipolar transistor Q2 which is the same potential as the base B of the bipolar transistor Q3 decreases, and the bipolar transistor Q2 becomes non-conductive.

Therefore, the emitter E potential of the bipolar transistor Q2 rises and becomes the DC power supply potential applied to the terminal T3, and the FET Q1 becomes conductive at the gate potential of the FET Q1 to which this potential is applied.

(4) Fourth Embodiment (4-1) Circuit Configuration FIG. 4 shows a rectifier circuit according to a fourth embodiment of the present invention and N which is a first semiconductor element constituting a rectified current path in the rectifier circuit. It is a circuit block diagram which shows the control circuit which controls channel FETQ1. The control circuit is a circuit surrounded by a broken line in FIG.
The circuit of FIG. 4 in the fourth embodiment is similar to the circuit of FIG. 2 in the second embodiment in that the emitter follower current is generated by an NPN bipolar transistor Q4 as a fourth semiconductor element and a PNP bipolar transistor Q5 as a fifth semiconductor element. An amplifier circuit is added.
This is the only difference between the circuits of FIG. 4 and FIG. Therefore, in the circuit of FIG. 4, each element of the circuit common to the circuit of FIG. 2 that is the second embodiment is denoted by the same reference numeral as that of FIG. 2, and the description of the circuit configuration of FIG. And omit duplicate explanations.

In the circuit of FIG. 4, the bases of the bipolar transistors Q4 and Q5 are connected to the collector C of the bipolar transistor Q2, the emitters of the bipolar transistors Q4 and Q5 are connected to the gate G of the FET Q1, and the collector of the bipolar transistor Q4 is The collector of the bipolar transistor Q5 is connected to the terminal T3 and the terminal T1.

(4) Fourth Embodiment (4-2) Circuit Operation The circuit operation of the rectifier circuit and the control circuit according to the fourth embodiment of the present invention will be described with reference to FIG.
In FIG. 4, an emitter follower current amplifier circuit is added to FIG. 2 which is the second embodiment, and a current sufficient to charge the gate capacitance of the FET Q1 can be supplied.
When the emitter potential of the bipolar transistor Q2 is high (the potential at the terminal T3), the bipolar transistor Q4 is turned on, the bipolar transistor Q5 is turned off, the FET Q1 is turned on, and the emitter potential of the bipolar transistor Q2 is low (the potential at the terminal T1). At this time, bipolar transistor Q4 is non-conductive, bipolar transistor Q5 is conductive, and FET Q1 is non-conductive.

Other than the above, the circuit operation of the second embodiment is as described in FIG. 2, and the circuit operation description of the second embodiment uses the circuit operation description of the first embodiment. .
Therefore, the circuit operation description of FIG. 4 which is the fourth embodiment uses the circuit operation descriptions of FIG. 1 and FIG. 2 which are the first and second embodiments, and omits the overlapping description.

(5) Fifth Embodiment (5-1) Circuit Configuration FIG. 5 shows a rectifier circuit according to a fifth embodiment of the present invention and N which is a first semiconductor element constituting a rectified current path in the rectifier circuit. It is a circuit block diagram which shows the control circuit which controls channel FETQ1. The control circuit is a circuit surrounded by a broken line in FIG.
In the circuit of FIG. 5 in the fifth embodiment, the PNP bipolar transistor Q5, which is a fifth semiconductor element constituting a part of the emitter follower circuit in the circuit of FIG. 4 in the fourth embodiment, is replaced with a diode that is a rectifier. D is replaced.

This diode D corresponds to a PN junction diode formed by the emitter E and base B of the bipolar transistor Q5.

This is the only difference between the circuits of FIG. 5 and FIG. Therefore, in the circuit of FIG. 5, the same reference numerals as those of FIG. 4 are given to the elements of the circuit common to the circuit of FIG. 4 which is the fourth embodiment, and the description of the circuit configuration of FIG. And omit duplicate explanations.

In the circuit of FIG. 5, the anode of the diode D is connected to the emitter E of the bipolar transistor Q4, and the cathode of the diode D is connected to the emitter E of the bipolar transistor Q2.

(5) Fifth Embodiment (5-2) Circuit Operation The circuit operation of the rectifier circuit and the control circuit according to the fifth embodiment of the present invention will be described with reference to FIG.
The diode D in FIG. 5 plays a role of discharging the charge accumulated in the gate G of the FET Q1 and making the FET Q1 non-conductive when the FET Q1 is made conductive. This is possible because the bipolar transistor Q2 is conducting when the FET Q1 is non-conducting, so that the cathode of the diode D is conducting with the collector C of the bipolar transistor Q2.

Except for the above, the circuit operation of FIG. 4 is the description of the fourth embodiment. The circuit operation description of the fourth embodiment is based on the circuit operation description of the second embodiment. The circuit operation description of the second embodiment uses the circuit operation description of the first embodiment.
Therefore, the description of the circuit operation of FIG. 5 which is the fifth embodiment overlaps with the description of the circuit operation of FIG. 1, FIG. 2 and FIG. 4 which is the first, second and fourth embodiments. I will omit the explanation.

(6) Sixth Embodiment (6-1) Circuit Configuration FIG. 6 shows a rectifier circuit according to a sixth embodiment of the present invention and a first semiconductor element constituting a rectified current path in the rectifier circuit. It is a circuit block diagram which shows the control circuit which controls N channel FETQ1.
In FIG. 6, the portion surrounded by a broken line is the control circuit. The control circuit includes an NPN bipolar transistor Q2 that is a second semiconductor element, an NPN bipolar transistor Q3 that is a third semiconductor element, a resistance element R1 that is a first resistance element, and a resistance element R2 that is a second resistance element. .

Further, an emitter E of an NPN bipolar transistor Q2 that is a second semiconductor element is connected to the terminal T1, and a collector C of an NPN bipolar transistor Q3 that is a third semiconductor element is connected to the terminal T2.

The emitter E of the bipolar transistor Q3 is connected to one end of the resistance element R2. That is, the base and emitter of the bipolar transistor Q3 are short-circuited.
The collector C of the bipolar transistor Q2 is connected to one end of a resistance element R1 that is a first resistance element, and the other end of the resistance element R1 is applied with a DC power supply that supplies the collector C potential of the bipolar transistor Q2 and the gate potential of the FET Q1. Connected to terminal T3.

The collector C of the bipolar transistor Q2 is connected to the gate G of the FET Q1, and the emitter E of the bipolar transistor Q2 is connected to the source of the FET Q1.

(6) Sixth Embodiment (6-2) Circuit Operation The circuit operation of the rectifier circuit and the control circuit according to the first embodiment of the present invention will be described with reference to FIG.

(6-2-1) Outline of operation for making FET Q1 non-conductive Assuming that the potential of the terminal T1 is V1 and the potential of the terminal T2 is V2, the bipolar transistor Q3 is non-conductive or slightly shallowly conductive when V1 ≦ V2, Since the bipolar transistor Q2 is surely turned on, the potential of the collector C of the bipolar transistor Q2 is reduced to approximately 0 V due to the voltage drop caused by the resistance element R1 (operation of the control circuit). The FET Q1 is non-conductive due to the gate potential of the FET Q1 to which this potential is transmitted (the operation of the rectifier circuit is combined with the operation of the control circuit).
That is, no current flows from the drain D to the source S of the FET Q1. Therefore, the circuit of FIG. 6 operates with the terminal T2 as the cathode of the diode and the terminal T1 as the anode of the diode.

(6-2-2) Outline of operation for making FET Q1 conductive On the contrary, when V1> V2, bipolar transistor Q3 is conductive and bipolar transistor Q2 is nonconductive, so there is no voltage drop due to resistance element R1, and bipolar transistor Q2 The potential of the collector C rises to the DC power supply voltage applied to the terminal T3 (operation of the control circuit), and the FET Q1 is made conductive by the gate potential of the FET Q1 to which this potential is transmitted (in conjunction with the operation of the control circuit). The operation of the rectifier circuit.)
That is, a current flowing from the source to the drain of the FET Q1 flows. Therefore, the circuit of FIG. 6 operates with the terminal T1 as the anode of the diode and the terminal T2 as the cathode of the diode.

Hereinafter, a sixth embodiment of the present invention will be described in detail with reference to FIG. However, there are preconditions of the following equations (1-1) and (1-2).
I _EC3 / hfe3> I _CE2 / hfe2... Formula (1-1)
Formula (1-1) represents I _BC3 > I _BE2 .
hfe2 · r1> hfe3 · r2 ··· formula (1-2)
Expression (1-1) is equivalent to Expression (1-2).
When the conditional expression of the case is expanded based on the expression (1-2), the following expression can be considered.
When hfe2 = hfe3, r1> r2 (2)
When hfe2> hfe3, r1 ≧ r2 (3)
When hfe2 >> hfe3, r1 <r2 (4)
The case where hfe2 <hfe3 is not considered here.

However, hfe2 is the current amplification factor when the emitter E of the bipolar transistor Q2 is grounded, and hfe3 is the current amplification factor when the collector C of the bipolar transistor Q3 is grounded.
I _BE2 is the base current of the bipolar transistor Q2, and I _BC3 is the base current of the bipolar transistor Q3.
I _CE2 is the collector current of the bipolar transistor Q2, and _IEC3 is the emitter current of the bipolar transistor Q3.
r1 is the resistance value of the resistance element R1, and r2 is the resistance value of the resistance element R2.
The emitter potential of the bipolar transistor Q2 is Ve2, the collector potential of the bipolar transistor Q3 is Vc3, Ve2 = V1, and Vc3 = V2.

Condition: A6
In Ve2 = Vc3 (the state where V1 = V2, the emitter potential of the bipolar transistor Q2 = the collector potential of the bipolar transistor Q3), the bipolar transistor Q3 conducts slightly shallower and the bipolar transistor Q2 conducts reliably.

In the circuit of FIG. 6, since hfe2> hfe3, Expression (3) is applied.
The reason why hfe2> hfe3 is that the bipolar transistor Q2 is grounded on the emitter and the bipolar transistor Q3 is grounded on the collector. Therefore, as represented by I _BC3 > I _BE2 , the base current of the bipolar transistor Q3 is large and the base current of the bipolar transistor Q2 is small.
However, the bipolar transistors Q2 and Q3 are examples in the case where they are substantially the same hfe in the same ground circuit (such as when both transistors are connected to the emitter ground). Further, it is preferable to use substantially the same temperature characteristics.

In FIG. 6, when “hfe2> hfe3”, r1 ≧ r2 (Equation (3)) is established, and the potential between the emitter E of the bipolar transistor Q2 and the collector C of the bipolar transistor Q3 is substantially the same. As a result, I _BC3 > I _{BE 2.} Therefore, the base forward voltage V _BC3 for conducting the bipolar transistor Q3 becomes V _BC3 > V _BE2 .

In the above state, since the bases of the bipolar transistor Q2 and the bipolar transistor Q3 are connected, both base potentials are balanced so that V ′ _BC3 = V ′ _BE2 ,
In the state of V _BC3 > V ′ _BC3 = V ′ _BE2 > V _BE2 , the potential settles to an intermediate potential between V _BC3 and V _BE2 .
Therefore, the base forward voltage V _BC3 for conducting the bipolar transistor Q3 is lower than the potential V _BC3 required for conducting the bipolar transistor Q3, and therefore I _BC3 and I _EC3 are normally applied to the base B of the bipolar transistor Q3. Less than when the base forward voltage _VBC3 is applied.

I _BC3 and I _EC3 decrease due to the balance of the base potentials of both bipolar transistors, V ′ _BC3 = V ′ _BE2 , but the current flowing through R2 is Ir2 = V3 / r2 and is limited by r2 and does not change.
I _BE2 flows as much as I _BC3 and I _EC3 decrease, and the bipolar transistor Q2 can maintain a reliable conduction state.

However, V _BE2 is a base potential with respect to the emitter potential of the bipolar transistor Q2,
V _BC3 is a base potential with respect to the collector potential of the bipolar transistor Q3.
The base forward voltage V _BE2 is a voltage at which the collector C and the emitter E of the bipolar transistor Q2 are conducted.
The base forward voltage _VBC3 is a voltage that conducts between the emitter E and the collector C of the bipolar transistor Q3.

Further explanation of I _BC3 > I _BE2
hfe2 is represented by hfe2 = I _CE2 / I _BE2 ,
hfe3 is represented by hfe3 = I _EC3 / I _BC3 .
I _CE2 is expressed as a function of the reciprocal of r1, and I _EC3 is expressed as a function of the reciprocal of r2.
I _EC3 / hfe3> I _CE2 / hfe2... Formula (1-1),
In the case of hfe2> hfe3, r1 ≧ r2...
There is a tendency of I _EC3 ≧ I _CE2 , and further, due to the relationship of hfe2> hfe3 in the formula (3),
As a result, I _BC3 > I _BE2 .
Since I _BC3 > I _BE2 , the base forward voltage V _BE2 of the bipolar transistor Q2 through which the low current amount I _BE2 flows is smaller than the base forward voltage V _{BC3 of the} bipolar transistor Q3 through which the large current amount I _BC3 flows. .
Therefore, as described above, V _BC3 > V _BE2 is _satisfied .

I _{EC3 ≈V3} / r2 and I _CE2 = V3 / r1. However, V3 is a DC power supply potential applied to the terminal T3.
Here, I _{EC3 ≈V3} / r2, and I _EC3 = V3 / r2 is not caused, because the base current is caused to flow through the bipolar transistors Q2 and Q3 through the resistance element R2.

Condition: B6
In Ve2 <Vc3 ′ (the state of V1 <V2, the emitter potential of the bipolar transistor Q2 <the collector potential of the bipolar transistor Q3), the bipolar transistor Q3 is non-conductive, and the bipolar transistor Q2 is reliably conductive.
If Ve2 <Vc3 ′ is expressed in another way, Vc2 <Vc3 ′ can be expressed as Ve2 <Vc3 + Vα.
The above condition: In addition to the description of A6, when the potential of the collector C of the bipolar transistor Q3 rises from Vc3 to Vα, the bipolar transistor Q3 maintains the predetermined potential between its collector C and base B. Will rise. For this reason, the base B potential of the bipolar transistor Q2 which is the same potential as the base B of the bipolar transistor Q3 further increases, and the bipolar transistor Q2 is surely turned on.

Condition: C6
In Ve2> Vc3 ″ (the state of V1> V2, the emitter potential of the bipolar transistor Q2> the collector potential of the bipolar transistor Q3), the bipolar transistor Q3 becomes conductive and the bipolar transistor Q2 becomes nonconductive.
If Ve2> Vc3 ″ is expressed in another way, Ve2> Vc3 ″ can be expressed as Ve2> Vc3-Vβ.

In addition to the description of the above condition A6, when the potential of the collector C of the bipolar transistor Q3 is lowered by Vβ from Vc3, the base potential is lowered by Vβ in order to maintain the predetermined self-collector C and base B potential. For this reason, the base B potential of the bipolar transistor Q2 which is the same potential as the base B of the bipolar transistor Q3 decreases, and the bipolar transistor Q2 becomes non-conductive.

Therefore, the collector C potential of the bipolar transistor Q2 rises and becomes the DC power supply potential applied to the terminal T3, and the FET Q1 becomes conductive at the gate G of the FET Q1 to which this potential is applied. Therefore, a current flows from the source S of the FET Q1 to the drain D, the source S of the FET Q1 has a function of an anode of the diode, and the drain D of the FET Q1 has a function of a cathode of the diode.

In the circuit of FIG. 6, the reason why the inductor L, which is an inductive element, is inserted between the drain D of the FET Q1 and the terminal T2 is to improve the frequency characteristics related to the current path interruption that makes the FET Q1 of the circuit non-conductive. .

This operating principle is that when the potential applied between the terminal T1 and the terminal T2 transitions from V1> V2 to V1 ≦ V2, the collector potential of the bipolar transistor Q3 immediately becomes V2, but the inductor L causes the drain of the FET Q1 to be drained. This is because a delay occurs in the applied potential V2, and time is taken until the FET Q1 becomes non-conductive.

If the inductor L is not inserted in the drain D-side current path of the FET Q1 in the current path in which the FET Q1 is disposed, the potential due to the charge discharge time of each element, in particular, the gates of the bipolar transistors Q2, Q3 and FET Q1 Due to the transmission delay, a time delay occurs for the FET Q1 to transition from conduction to non-conduction.
Therefore, the current flows backward from the drain D to the source S of the FET Q1 while the FET Q1 is in the conductive state.

When such a situation occurs, the function as a rectifier circuit is lost. The inductor L has a function of delaying transmission of the potential V2 applied to the terminal T2 to the drain D of the FET Q1. This inductor L can be adapted to a rectifier circuit such as a switching power supply to which a harmonic pulse potential is applied. *

(7) Seventh Embodiment (7-1) Circuit Configuration FIG. 7 shows a rectifier circuit according to a seventh embodiment of the present invention and N which is a first semiconductor element constituting a rectified current path in the rectifier circuit. It is a circuit block diagram which shows the control circuit which controls channel FETQ1.
FIG. 7 in the seventh embodiment is a circuit in which the inductor L, which is an inductive element, is removed from FIG. 6 in the sixth embodiment, and the terminal T2 and the drain D of the FET Q1 are directly connected.
Therefore, in the circuit of FIG. 7, the reference numerals of the elements other than the inductor L are the same as those of the elements of the circuit of FIG. 6, and the description of the circuit configuration of FIG. Omit.

(7) Seventh Embodiment (7-2) Circuit Operation The circuit of FIG. 7 in the seventh embodiment removes the inductor L that is an inductive element from the circuit of FIG. 6 in the sixth embodiment. , A circuit in which the terminal T2 and the drain D of the FET Q1 are directly connected.
Therefore, the description of the circuit operation in FIG. 7 is the same as that in which the operation description of the inductor L, which is an inductive element, is deleted from the description of the circuit operation in FIG. 6, and the same overlapping description is omitted.

In FIG. 7, since there is no inductor L, there is no need to improve the frequency characteristic related to the current path interruption that makes the FET Q1 of the operation description in FIG. 6 non-conductive. Is suitable for an ORingFET diode circuit for connecting the two in parallel.

(8) Eighth Embodiment (8-1) Circuit Configuration FIG. 8 shows a rectifier circuit according to an eighth embodiment of the present invention and N which is a first semiconductor element constituting a rectified current path in the rectifier circuit. It is a circuit block diagram which shows the control circuit which controls channel FETQ1.

The circuit of FIG. 8 in the eighth embodiment removes the inductor L, which is an inductive element, from the circuit of FIG. 6 in the sixth embodiment, directly connects the terminal T2 and the drain D of the FET Q1, and is further bipolar. In this circuit, the connection between the base B and the emitter E of the transistor Q3 is opened. That is, the emitter of the bipolar transistor Q3 is open.
Therefore, the reference numerals of the elements of the circuit of FIG. 8 are the same as the reference numerals of the elements of the circuit of FIG. 6, the description of the circuit configuration of FIG. 6 is used, and the overlapping description is omitted.

(8) Eighth Embodiment (8-2) Circuit Operation The circuit operation of the rectifier circuit and the control circuit according to the eighth embodiment of the present invention will be described with reference to FIG.

The circuit of FIG. 8 in the eighth embodiment removes the inductor L that is an inductive element from the circuit of FIG. 6 in the sixth embodiment, directly connects the output terminal T2 and the drain D of the FET Q1, In this circuit, the connection between the base B and the emitter E of the bipolar transistor Q3 is opened.

The circuit of FIG. 8 which is the eighth embodiment of the present invention is a circuit in which the base B and the emitter E of the bipolar transistor Q3 are not connected, that is, surrounded by a broken line in the eighth embodiment of the present invention. This is the reason why the control circuit is different from the circuit operation of the control circuit surrounded by the broken line in FIG. 6 which is the sixth embodiment of the present invention.
In the description of the eighth embodiment of the present invention, the same symbols are used for symbols such as potential value, current value, current amplification factor, resistance value, etc. used in the sixth embodiment, and Identical.

Therefore, in the description of the circuit operation of FIG. 8, the description of the operation of the inductor L, which is an inductive element, is deleted from the description of the circuit operation of FIG. 6, and the connection between the base B and the emitter E of the bipolar transistor Q3 is opened. The operation will be mainly described, and the description of the operation of the circuit in FIG.

Since the inductor L does not exist in the circuit of FIG. 8, a high frequency cutoff characteristic that does not need to improve the frequency characteristic related to the current path cutoff (the FET Q1 is made non-conductive) in the operation of the circuit of FIG. 6 is required. This is suitable for a rectifier circuit that is not connected, an ORingFET diode circuit for connecting DC power supplies in parallel, and the like.

In the circuit of FIG. 8, since the base B and the emitter E of the bipolar transistor Q3 are open, the bipolar transistor Q3 functions as a PN junction diode with the base B being P-type and the collector C being N-type.

(8-2-1) Outline of operation for making FET Q1 non-conducting When the potential of the terminal T1 is V1 and the potential of the terminal T2 is V2, the collector potential between the base B and the collector C of the bipolar transistor Q3 is V1 ≦ V2. A standard PN junction potential difference of base forward voltage V ″ _BC3 = about 0.6 V is generated with reference to the base potential of bipolar transistor Q2 and bipolar transistor Q2 having a common base potential and bipolar transistor Q2 is surely turned on. .

In the circuit of FIG. 8, since the emitter current of the bipolar transistor Q3 does not flow,
If I _BC3 + I _CE2 = V3 / r2 and V3 / r2 is constant, I _BC3 is larger when the emitter current of bipolar transistor Q3 does not flow than when the emitter current of bipolar transistor Q3 flows. .

Therefore, since a current flows through the current path of the bipolar transistor Q2, the potential of the collector C of the bipolar transistor Q2 is reduced to approximately 0 V due to a voltage drop caused by the resistance element R1 (operation of the control circuit).
The FET Q1 is non-conductive due to the gate potential of the FET Q1 to which this potential is transmitted (operation of the rectifier circuit in addition to the operation of the control circuit).
That is, no current flows from the drain D to the source S of the FET Q1. Therefore, the circuit of FIG. 4 operates with the terminal T1 as the anode of the diode and the terminal T2 as the cathode of the diode.

(8-2-2) Outline of Operation for Making FET Q1 Conductive On the contrary, when V1> V2, the potential of the base B of the bipolar transistor Q3 is lowered similarly to the sixth embodiment, and the bipolar transistor Q2 is non-conductive. Therefore, there is no voltage drop due to the resistor element R1, the potential of the collector C of the bipolar transistor Q2 rises to the DC power supply voltage applied to the terminal T3 (operation of the control circuit), and the gate potential of the FET Q1 to which this potential is transmitted Thus, the FET Q1 is made conductive (operation of the rectifier circuit together with the operation of the control circuit).
That is, a current flowing from the source to the drain of the FET Q1 flows. Therefore, the circuit of FIG. 8 operates with the terminal T1 as the anode of the diode and the terminal T2 as the cathode of the diode.

Hereinafter, the eighth embodiment of the present invention will be described in detail with reference to FIG. However, there is a precondition of the following equation (5).
I ′ _BC3 > I _CE2 / hfe2 (5)
I ′ _BC3 > I _BE2 Formula (6)
Formula (5) means Formula (6). That is, the base current I _BE2 of the bipolar transistor Q2 is set smaller than the base current I ′ _BC3 of the bipolar transistor Q3.

The collector current I _CE2 of the bipolar transistor Q2 is I _CE2 = V3 / r1, and when the current amplification factor of the bipolar transistor Q2 is hfe2, the base current I _BE2 of the bipolar transistor Q2 is I _BE2 = V3 / r1 / hfe2. Become.
Since the sum of the base current I ′ _BC3 of the bipolar transistor Q3 and the base current I _BE2 of the bipolar transistor Q2, I ′ _BC3 + I _BE2 is limited by V3 / r2,
I ′ _BC3 + I _BE2 = V3 / r2. (I ′ _BC3 + V3 / r1 / hfe2) = V3 / r2 (7)

Condition: A8
Ve2 = Vc3 (V1 = V2 state. Emitter potential of bipolar transistor Q2 = collector potential of bipolar transistor Q3. Source potential of FETQ1 = drain potential)
Since the base forward voltage V ″ _{BC3 of the} bipolar transistor Q3 is about 0.6V (standard PN junction diode forward voltage), the bipolar transistor Q3 has a base forward voltage V _BE2 of the bipolar transistor Q2 lower than this voltage. The bipolar transistor Q2 is reliably turned on by the base potential of the bipolar transistor Q2 having a common base potential.

From the precondition, I ′ _BC3 > I _BE2 (6), the explanation of FIG. 1 in the first embodiment is used, and V ″ _BC3 > V ″ ′ _BC3 = V ″ _BE2 > _VBE2 . If the emitter potential of the bipolar transistor Q2 = the collector potential of the bipolar transistor Q3 (the source potential of the FET Q1 = the drain potential), in the bipolar transistor Q2 and the bipolar transistor Q3 having the same base potential, the base of the bipolar transistor Q2 at this time The potential V ″ _BE2 is higher than the base forward voltage V _{BE2 of} the bipolar transistor Q2 defined by the base current I _BE2 = I _CE2 / hfe2 of the bipolar transistor Q2 (V ″ _BE2 > V _BE2 ).
A potential (V ″ _BE2 = V ″ ′ _BC3 ) synthesized by the base forward voltage V _BE2 of the bipolar transistor Q2 and the base forward voltage V ″ _{BC3 of the} bipolar transistor Q3 is set so that the bipolar transistor Q2 becomes sufficiently conductive. To obtain the base forward voltage.

However, V ″ ′ _BC3 and V ″ _BE2 are base potentials in the condition A8 of the bipolar transistors Q3 and Q2 having the base B as a common potential, respectively. That is, the potentials V ″ _BC3 and V _BE2 are balanced potentials.
Since the base of the bipolar transistor Q2 and the bipolar transistor Q3 is connected, both the base potential _{V "} _'BC3 = V" _BE2 and so _{as, V "BC3>V"'} balanced at _BC3 = _{_V "BE2>} _V BE2 .

Thus, since the bipolar transistor Q2 is surely turned on, the collector C potential of the bipolar transistor Q2 is reduced to about 0 V, and the FET Q1 is non-conductive at the gate of the FET Q1 to which this potential is applied. For this reason, no current flows from the drain D of the FET Q1 to the source S, and it has a function of blocking the reverse current of the diode.

Condition: B8
When Ve2 <Vc3 ′ (the state of V1 <V2, the emitter potential of the bipolar transistor Q2 <the collector potential of the bipolar transistor Q3. The source potential of the FET Q1 <the drain potential), the bipolar transistor Q2 is surely turned on.
If Ve2 <Vc3 ′ is expressed in another way, Vc2 <Vc3 ′ can be expressed as Ve2 <Vc3 + Vα.
In addition to the description of the above condition (A8), when the potential of the collector C of the bipolar transistor Q3 rises from Vc3 to Vα, the bipolar transistor Q3 maintains the determined potential difference between its own collector C and base B. Vα will rise. For this reason, the base B potential of the bipolar transistor Q2 which is the same potential as the base B of the bipolar transistor Q3 further increases, and the bipolar transistor Q2 is surely turned on.

Therefore, the potential of the collector C of the bipolar transistor Q2 decreases to approximately 0 V, and the FET Q1 is non-conductive at the gate of the FET Q1 to which this potential is applied. For this reason, no current flows from the drain D of the FET Q1 to the source S, and it has a function of blocking the reverse current of the diode.

Condition: C8
Ve2> Vc3 "
This is the state of V1> V2, where the emitter potential of the bipolar transistor Q2> the collector potential of the bipolar transistor Q3 and the source potential of the FET Q1> the drain potential. At this time, bipolar transistor Q2 becomes non-conductive.
If Ve2> Vc3 ″ is expressed in another way, Ve2> Vc3 ″ can be expressed as Ve2> Vc3-Vβ.
In addition to the description of the above condition A8, when the potential of the collector C of the bipolar transistor Q3 is lowered by Vβ from Vc3, the base potential is lowered by Vβ in order to maintain the predetermined potential between the collector C and base B. For this reason, the base B potential of the bipolar transistor Q2 which is the same potential as the base B of the bipolar transistor Q3 decreases, and the bipolar transistor Q2 becomes non-conductive.

Therefore, the collector C potential of the bipolar transistor Q2 rises and becomes the DC power supply potential applied to the terminal T3, and the FET Q1 becomes conductive at the gate of the FET Q1 to which this potential is applied.

(9) Ninth Embodiment (9-1) Circuit Configuration FIG. 9 shows a rectifier circuit according to a ninth embodiment of the present invention and N which is a first semiconductor element constituting a rectified current path in the rectifier circuit. It is a circuit block diagram which shows the control circuit which controls channel FETQ1. The control circuit is a circuit surrounded by a broken line in FIG.
The circuit of FIG. 9 in the ninth embodiment is different from the circuit of FIG. 6 in the sixth embodiment in that an emitter follower current is generated by an NPN bipolar transistor Q4 as a fourth semiconductor element and a PNP bipolar transistor Q5 as a fifth semiconductor element. An amplifier circuit is added.
Therefore, in FIG. 9, the same reference numerals as those in FIG. 6 are given to the elements of the circuit common to the circuit in FIG. 6 as the sixth embodiment, and the description of the circuit configuration in FIG. Omit duplicate explanations.

In FIG. 9, the bases of the bipolar transistors Q4 and Q5 are connected to the collector C of the bipolar transistor Q2, the emitters of the bipolar transistors Q4 and Q5 are connected to the gate G of the FET Q1, and the collector of the bipolar transistor Q4 is connected to the terminal T3. In addition, the collector of the bipolar transistor Q5 is connected to the terminal T1.

(9) Ninth Embodiment (9-2) Circuit Operation The circuit operation of the rectifier circuit and the control circuit according to the fifth embodiment of the present invention will be described with reference to FIG.
In FIG. 9, an emitter follower current amplifier circuit is added to FIG. 6 which is the sixth embodiment, and a current sufficient to charge the gate capacitance of the FET Q1 can be supplied.
When the collector potential of the bipolar transistor Q2 is high (the potential at the terminal T3), the bipolar transistor Q4 is turned on, the bipolar transistor Q5 is turned off, the FET Q1 is turned on, and the collector potential of the bipolar transistor Q2 is low (the potential at the terminal T1). At this time, bipolar transistor Q4 is non-conductive, bipolar transistor Q5 is conductive, and FET Q1 is non-conductive.

Other than the above, the circuit operation of FIG. 6 according to the sixth embodiment is described, and the description of FIG. 9 uses the description of FIG. 6 and omits the overlapping description.

In the present invention, first to ninth embodiments exist, and FIGS. 1 to 9 exist. The present invention can be realized by combining the respective characteristic portions shown in FIGS.
That is, the combination of the presence or absence of the inductor L, the connection or opening of the base B and the emitter E of the bipolar transistor Q3, and the selection of the collector ground or emitter ground of the bipolar transistor Q2.

Q1 to Q5 Semiconductor element R1 to R3 Resistance element D Rectifier element C Capacitance element LED Light emitting element PD1 to PDn Light receiving element RD Constant current element T1, T2 terminals T1 ', T2' terminals

Claims

A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element, a second resistance element, and an inductive element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source to one end of the current path of the second semiconductor element via the first resistance element and to one end of the current path of the third semiconductor element via the second resistance element Is configured to flow,
The potential of the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and the potential of the other end of the first semiconductor element is transmitted from one end of the inductive element to the inductive element. Configured to be transmitted to the other end of the third semiconductor element via the other end,
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted,
A rectifier circuit comprising a current path between one end of the first semiconductor element and the other end of the inductive element.
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element and a second resistance element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source to one end of the current path of the second semiconductor element via the first resistance element and to one end of the current path of the third semiconductor element via the second resistance element Is configured to flow,
A potential at the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and a potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element. Configured to
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted,
A rectifier circuit comprising a current path between one end of the first semiconductor element and the other end of the first semiconductor element.
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element, a second resistance element, and an inductive element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source flows through one end of the current path of the second semiconductor element through the first resistance element, and
One end of the third semiconductor element is opened,
The potential of the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and the potential of the other end of the first semiconductor element is transmitted from one end of the inductive element to the inductive element. Configured to be transmitted to the other end of the third semiconductor element via the other end,
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted,
A rectifier circuit comprising a current path between one end of the first semiconductor element and the other end of the inductive element.
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element and a second resistance element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source flows through one end of the current path of the second semiconductor element through the first resistance element, and
One end of the third semiconductor element is opened,
A potential at the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and a potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element. Configured to
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted,
A rectifier circuit comprising a current path between one end of the first semiconductor element and the other end of the first semiconductor element.
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element, a second resistance element, and an inductive element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source to one end of the current path of the second semiconductor element via the first resistance element and to one end of the current path of the third semiconductor element via the second resistance element Is configured to flow,
The potential of the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and the potential of the other end of the first semiconductor element is transmitted from one end of the inductive element to the inductive element. Configured to be transmitted to the other end of the third semiconductor element via the other end,
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. Part of the rectifier circuit in which the potential of the first control terminal is increased, the current path of the first semiconductor element is conducted, and the current path is between one end of the first semiconductor element and the other end of the inductive element. A control circuit comprising:
The control circuit is configured such that an external bias potential is applied to the second control terminal and the third control terminal by the second resistance element, and between the one end and the other end of the current path of the second semiconductor element. A current supplied by an external DC power source flows between the one end and the other end of the current path of the third semiconductor element via the first resistance element. 2 is configured to be transmitted to one end of the first semiconductor element, and is configured to be transmitted to the other end of the third semiconductor element.
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conducted, and the potential at one end of the second semiconductor element is output as a low potential,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is increased. A control circuit which outputs as a potential.
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element and a second resistance element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source to one end of the current path of the second semiconductor element via the first resistance element and to one end of the current path of the third semiconductor element via the second resistance element Is configured to flow,
A potential at the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and a potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element. Configured to
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted, and one of the rectifier circuits having a current path between one end of the first semiconductor element and the other end of the first semiconductor element. A control circuit constituting a unit,
The control circuit is configured so that an external bias potential is applied to the second control terminal and the third control terminal by the second resistance element, and the first resistance is connected to one end of a current path of the second semiconductor element. A current supplied from an external DC power source flows through one end of the current path of the third semiconductor element via the second resistance element via the element, and the potential at the other end of the second semiconductor element is A control circuit configured to be transmitted to one end of the first semiconductor element, and configured to transmit a potential of the other end of the first semiconductor element to the other end of the third semiconductor element.
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element, a second resistance element, and an inductive element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source flows through one end of the current path of the second semiconductor element through the first resistance element, and
One end of the third semiconductor element is opened,
The potential of the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and the potential of the other end of the first semiconductor element is transmitted from one end of the inductive element to the inductive element. Configured to be transmitted to the other end of the third semiconductor element via the other end,
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. Part of the rectifier circuit in which the potential of the first control terminal is increased, the current path of the first semiconductor element is conducted, and the current path is between one end of the first semiconductor element and the other end of the inductive element. A control circuit comprising:
The control circuit is configured so that an external bias potential is applied to the second control terminal and the third control terminal by the second resistance element, and the first resistance is connected to one end of a current path of the second semiconductor element. A current supplied from an external DC power source is configured to flow through the element, one end of the third semiconductor element is opened, and the potential at the other end of the second semiconductor element is transmitted to one end of the first semiconductor element. And the potential at the other end of the first semiconductor element is transmitted from one end of the inductive element to the other end of the third semiconductor element via the other end of the inductive element. A control circuit characterized by that.
A first semiconductor element having a first control end and having one end and the other end of a current path;
A second semiconductor element having a second control end and having one end and the other end of a current path;
A third semiconductor element having a third control end and having one end and the other end of a current path;
A first resistance element and a second resistance element;
An external bias potential is applied to the second control end and the third control end by the second resistance element,
A current supplied from an external DC power source flows through one end of the current path of the second semiconductor element through the first resistance element, and
One end of the third semiconductor element is opened,
A potential at the other end of the second semiconductor element is configured to be transmitted to one end of the first semiconductor element, and a potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element. Configured to
The potential of the other end of the third semiconductor element is the same as the potential of the other end of the second semiconductor element, or the potential of the other end of the third semiconductor element is greater than the potential of the other end of the second semiconductor element. When it is high, the current path of the second semiconductor element is conductive, the potential of the first control terminal to which the potential of one end of the second semiconductor element is transmitted decreases, and the current path of the first semiconductor element is non-conductive. Yes,
When the potential at the other end of the third semiconductor element is lower than the potential at the other end of the second semiconductor element, the current path of the second semiconductor element becomes non-conductive and the potential at one end of the second semiconductor element is transmitted. The potential of the first control terminal is increased, the current path of the first semiconductor element is conducted, and one of the rectifier circuits having a current path between one end of the first semiconductor element and the other end of the first semiconductor element. A control circuit constituting a unit,
The control circuit is configured so that an external bias potential is applied to the second control terminal and the third control terminal by the second resistance element, and the first resistance is connected to one end of a current path of the second semiconductor element. A current supplied from an external DC power source is configured to flow through the element, one end of the third semiconductor element is opened, and the potential at the other end of the second semiconductor element is transmitted to one end of the first semiconductor element. And a potential at the other end of the first semiconductor element is transmitted to the other end of the third semiconductor element.
One end of the second semiconductor element is a collector of the bipolar transistor, the other end of the second semiconductor element is an emitter of the bipolar transistor, and one end of the third semiconductor element is an emitter of the bipolar transistor, The rectifier circuit according to any one of claims 1 to 4, wherein the other end of the three semiconductor elements is a collector of a bipolar transistor.
One end of the second semiconductor element is an emitter of a bipolar transistor, the other end of the second semiconductor element is a collector of the bipolar transistor, and one end of the third semiconductor element is an emitter of the bipolar transistor, The rectifier circuit according to any one of claims 1 to 4, wherein the other end of the three semiconductor elements is a collector of a bipolar transistor.
One end of the second semiconductor element is a collector of the bipolar transistor, the other end of the second semiconductor element is an emitter of the bipolar transistor, and one end of the third semiconductor element is an emitter of the bipolar transistor, 9. The control circuit according to claim 5, wherein the other end of the three semiconductor elements is a collector of a bipolar transistor.
One end of the second semiconductor element is an emitter of a bipolar transistor, the other end of the second semiconductor element is a collector of the bipolar transistor, and one end of the third semiconductor element is an emitter of the bipolar transistor, 9. The control circuit according to claim 5, wherein the other end of the three semiconductor elements is a collector of a bipolar transistor.
An integrated circuit element comprising the rectifier circuit according to any one of claims 1 to 4, 9, and 10.
An integrated circuit device comprising the control circuit according to any one of claims 5 to 8, 11, and 12.