TW201119057A - Thin film solar cell and manufacturing method thereof - Google Patents

Abstract

A thin film solar cell including a substrate, a first conductive layer, a photovoltaic layer, a second conductive layer and a barrier material is provided. The first conductive layer is disposed on the substrate and has a plurality of first openings to expose a portion of the substrate. The photovoltaic layer is disposed on the first conductive layer and has a plurality of second openings to expose a portion of the first conductive layer. The second conductive layer is disposed on the photovoltaic layer and has a plurality of third openings to expose a portion of the first conductive layer and a portion of the side surface at the photovoltaic layer. The third openings and a portion of the second openings are located in the same place, and the second conductive layer is physically connected to the first conductive layer by the second openings. The barrier material fills into the third openings and at least covers the first conductive layer and the photovoltaic layer exposed by the third openings. A manufacturing method of the thin film solar cell is also provided.

Description

201119057 3i433twr.a〇c/n VI. Description of the Invention: [Technical Field] The present invention relates to a solar cell and a method for fabricating the same, and relates to a thin film solar cell having better photoelectric conversion efficiency and Production method - ', [previous technology] Due to the shortage of petrochemical energy, people's awareness of the importance of environmental protection is well-recognized. Therefore, in recent years, it has been said that the development of alternative energy sources can reduce the current dependence of human beings on petrochemical energy = and the use of petrochemical energy. The impact on the environment. In the many technologies of == and renewable energy, solar cells (Qin edi) are eye-catching and solar cells can directly convert solar energy into mussels without polluting the environment. . The material is a cross-section of a conventional thin film solar cell. Figure 1 shows a conventional thin film solar cell. (active area) PI % % r〇 (Aei, A hair transfer area, b, and second wire (嶋) P2, _ photoelectric conversion zone photoelectric conversion layer 13G for converting external light rays. Generally, the thin film solar cell 1GG is generally stacked with the first electrode layer 12 on the soil plate 110; the electrode layer is just In the process of stacking these layers, the process of r 2 is called the pour layer, and the secondary battery (ieell) is shown in Fig. 2011. 201119057 31433twf.doc/n Detailed, , Tian, and „, in full formation The second electric (10) ί layer is usually patterned by a laser cutting process to form a second electrode layer 14G as shown in Fig. 1. After the process of completing this step, the =121 in the p-region p2 of the photoelectric conversion region The side walls of the photoelectric conversion layer 130 and the second electrode layer M0 (the region 132 shown by the fins in FIG. 1) are not covered with an insulating layer, and the leakage current of these layers is affected. 'Solar battery, the second is so - it is possible to form ^, _3 battery 100 electrical performance, and reduce thin 0 The service life, even the safety of personnel a / [Summary of the content] efficiencies = mention = a thin film solar cell, which can have a power conversion effect ^ I bribe low leakage current ' and have a better light电明k is supplied with a thin amine; 1哩At$ is filled with a barrier material in the method of: c-battery, which is formed by a layer and a second conductive layer: a second conductive layer, a photoelectric conversion of -iii; a film solar cell comprising: a substrate, a material. The first conversion u two conductive layer "and - the barrier material conductive layer is disposed on the substrate, and has a plurality of first openings in a different number: light! conversion layer configuration On the first conductive layer, and having the first: two-out portion of the first conductive layer. The photoelectric conversion layer is transmitted through the layer, and the second body is connected. The second conductive layer is disposed on the photoelectric switch, and the second opening is exposed. a portion of the first conductive layer and a portion of the side surface of the 201119057 31433twi.doc/n photoelectric conversion layer. The third opening openings are located at the same position, and the second conductive layer is physically connected through the first conductive layer. The barrier material is filled in. These sweats at least cover the exposure of these third openings The first side surface of the layer. The electric layer and the electro-converting material. In the embodiment of the present invention, the above-mentioned barrier material comprises - 〇 insulating in the present invention, the above-mentioned insulating material or an organic material In one embodiment of the present invention, the above-mentioned inorganic material package: and the combination of the incision, the nitrous oxide, the carbon cutting, the oxidation, the oxygen, or the above, the present invention - the implementation of the above, the organic Materials include photoresist, butylene, cycloolefins, polyimine, polyfluorene: =: oxygen-benzene, resin, poly

In the invention, the photoelectric conversion layer is an IV 溥Μ, -m_V compound semiconductor film, a semiconductor film or an organic compound semiconductor film. σ In the present invention, the above-mentioned Ιν-type film includes at least one of a ship, a so-called a, a_SiC, a SiC, a stacked (() coffee) sagittal film or a triple IV film. In the embodiment, the above-described chalcogenide semiconductor film formation includes gallium arsenide (GaAs) or indium gallium (InGaP). 201119057 ^i4〇^rwf.d〇c/n The heart of the present invention is a H-zone, and the above-mentioned VI compound ruthenium film includes copper indium selenide (CIS), copper indium gallium selenide (CdTe) or a combination thereof. In one embodiment of the present invention, the above organic compound semiconductor thin film comprises a mixture of 3-hexane porphine (p-lye (3_hexyithi hene) carbon balloon 〇 CBM). Talk:) and 奈 透明 ί : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : In one embodiment of the invention, the material of the second conductive layer is a layer of the month h and the first conductive layer comprises a reflective layer and a transparent conductive layer to the second, and the present invention proposes a thin film solar cell. The manufacturing method is a substrate. Next, a "first" conductive layer is formed on the substrate. A plurality of younger brothers are formed on the first conductive layer, and the first and second openings are exposed to the second conductive conversion layer on the first conductive layer. Forming a plurality of first photoelectric conversion layers ‘where the second openings expose a portion of the Ϊ======================================================================== Then, the formation of a plurality of brothers two open the second layer of the second layer of the conductive layer of the second-lead, a part of the two dynasty roads, part of the second layer and the part of the side of the first conversion layer, and the younger brother The second open fish is the first violation of _+&- electric layer penetration, 5,, _ /, brother ¥ electric layer connection. Finally, fill in the - Tsui 2;:: in the second opening, where the barrier material is at least covered by the first opening + 庶t ^ 二弟® exposed by the two openings and the side of the photoelectric conversion layer surface. 201119057 31433twf.doc/n In one embodiment of the invention, the barrier material is simultaneously filled into each of the third openings while forming each of the third openings. In one embodiment of the invention, the step of filling the barrier material into the third openings is followed by the step of forming the third openings. In one embodiment of the invention, the above method of filling the barrier material includes performing a dispensing, inkjet printing, screen printing, dry film pressing or coating process. In one embodiment of the invention, the above method of forming a photoelectric conversion layer comprises radio frequency plasma assisted chemical vapor deposition (Radi〇 Frequency)

Plasma Enhanced Chemical Vapor Deposition, RF PECVD), Ultra High Frequency Plasma_Chemical Gas Hermetic Method (Very High Ffequeney ρι_&

Enhanced Chemical Vapor Deposition, VHF PECVD) or Microwave Plasma Assisted Chemical Gas _ (MiefQwave plasma Enhaneed

Chemical Vapor Deposition, MW PECVD). In the embodiment of the present invention, the method for forming the first conductive layer further comprises forming a transparent conductive layer and a reflective layer on at least one of the substrates, wherein the second conductive layer is a transparent conductive layer. It is obvious that in the embodiment, the forming of the second conductive layer comprises forming a transparent conductive layer and a reflective layer at least on the photovoltaic layer, wherein the first conductive layer is a transparent conductive layer. Based on the above description, due to the fact that the thin solar cell battery of this (four) has the cover of the 7th road, the conductive layer and the side surface of the photoelectric conversion layer are lifted to prevent the moisture from invading and causing the deterioration of the film layer, 3 current USC) The shunt resistor (sh_resis_ Niu V layer, the surface of the photoelectric conversion layer side may form a leak 201119057 3! 43itwf.doc / n flow problem, can mention the electrical performance rate of the solar cell. In addition, the present invention also provides a The above-mentioned features and advantages of the present invention are more apparent and easy to understand, and the embodiments are described in detail with reference to the following drawings. [Embodiment] A schematic cross-sectional view of a thin film solar cell according to an embodiment of the present invention. Please refer to ® 2 ' In this embodiment, a thin film solar cell 2 〇〇 & includes a substrate 210, a first conductive layer 220, and photoelectric conversion a layer 23, a second conductive layer 240, and a barrier material 250. In this embodiment, the substrate 210 may be a transparent substrate, such as a glass substrate. The first conductive layer 220 is disposed on The board 210 has a plurality of first openings 222 to expose a portion of the substrate 210, wherein the first conductive layer 22 is generally used as a front electrode of a plurality of series sub cells. In an example, the first conductive layer 22 can be a transparent conductive layer, and the material thereof can be indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (indium tin oxide). Indium tin zinc oxide, ITZO), zinc oxide, aluminum tin oxide, aluminum zinc oxide (AZO), cadmium indium oxide (CIO) At least one of cadmium zinc oxide (CZO), gallium oxide (GZO) and tin oxyfluoride (FTO). In another embodiment not shown, the first conductive layer .220 is also It may be 201119057 ji43jtwi.a〇c/n two reflection: (Βί::) and a laminate of the above transparent conductive layer, wherein the reflection is located between the transparent conductive layer and the substrate (10), and the material of the reflective layer is, for example, silver or A metal with better reflectivity such as aluminum. - Photoelectric conversion layer 23〇 The first conductive layer 2 is disposed as above, and has a plurality of second openings 232 to expose a portion of the first conductive layer 22, wherein the photoelectric conversion layer 230 transmits through the first embodiment. In the embodiment, the photoelectricity is two= III-V compound semiconductor thin film ^, ^ IV 敎 film, or - organic compound semiconductor film. In this case, the Group IV film is, for example, == dem) Group IV film (eg, stacked (trlple) Group IV film (eg: three layers; 1 矣 conductor) The film includes, for example, a gallium-plated gallium S), a packaged two: a combination, a II-VI compound semiconductor film such as steel, (CIS), copper indium _ (CIGS), a mixture of coffee (four), Ρ3ΗΤ) and Nai Rice carbon ball (10) chest) The sun can be made of amorphous austenitic film thin == electric film too, battery, stacked type, 砸 film sun-layer tnp type solar cell, copper indium solar, 铜 copper steel recording film Solar cell, recording film or __ too battery financial structure. For the tenth, the only (four) photoelectric conversion layer 23 can be seen by the needs of the user. 201119057 31433twf.doc/n For illustrative purposes only, the thin film solar cell 200 can also be a film structure using other possible thin film solar cells. . Referring to FIG. 3, a stacked thin film solar energy is taken as an example, that is, the photoelectric conversion f layer 230 may be a laminate of the first semiconductor dimensional laminate 234 and the second semiconductor stacked θ 236, wherein the first semiconductor stacked layer 234 is, for example, A type of semiconductor, layer 234a, first-essential layer 234b and second-type semiconductor layer 234c', and semiconductor stack 236, for example, having a third type f 236a, a second intrinsic layer 236b, and a fourth type semiconductor layer &. The third type semiconductor layer of the first type semiconductor layer 234a of the semiconductor stacked layer 234 may be a P + + body layer ' and the first semiconductor stacked layer 234c and the second semiconductor stacked layer 236 The fourth type of semiconductor-two is an N-type semiconductor layer. In other words, the first half layer 234 and the second ♦ conductor stack layer 236 of the present embodiment are exemplified by a piN semiconducting structure, but are not limited thereto. The J 236a of the first semiconductor stacked layer 234 and the second semiconductor stacked layer 236 may be an N-type semiconductor layer, and the first semiconductor stack: the layer=_c and the second semiconductor stacked layer 236; the work layer 236c may be a P-type a semiconductor layer. Further, in other implementations, the + ^ : the first semiconductor stacked layer 234 and the second semiconductor described above are "two of the above: or may have no - the first layer 2 and the first layer

Semiconductor stack structure. Referring to FIG. 2, the second conductive layer 240 is disposed on the photoelectric conversion layer 11 201119057 3l433twr.doc/n, and has a plurality of third openings 242 to expose part of the first and the photoelectric The partial side surface of the layer 23 (the third opening day 242 and the portion of the second opening 232 are located at the same position 24〇, the second opening 232 and the first conductive layer 22〇; 'The thin film solar cell can be divided into the photoelectric conversion region Ρ1 and the insulating region 如2 as shown in the second opening 242 through the third opening 242. Further, the second conductive layer 240 can be referred to by the above transparent conductive layer, The material of the second conductive layer 240 may have a reflective layer. The second conductive layer 240 has a reflective layer. The power-on layer 220 can only be a reflective layer. Transparent conductive layer. Conversely, when the reflective layer is designed, the second conductive layer can only be a transparent electrode; instead of the above reflective layer. In another embodiment, the first core = 21 and Brother-guide layer 24G can also be a transparent conductive layer, without anti-, /, configuration. In other words, this part The design can be adjusted according to the user's needs (for example, making a double-sided light-receiving thin-film solar cell), and the upper pool or the early surface is only for illustrative purposes, not limited to this. In the third opening 242, and to the side surface of the first conductive layer 220 and the photoelectric conversion layer 230 exposed by 242, as shown in FIG. 2, new + » . ^ 9.π Φ φ θ m . In the embodiment, the barrier material electroacoustic 220: the side surface of the first conductive layer 23! exposed by the third opening 242 and a part of the second conductive layer-conductive reed 2^0, also 2 water emulsion intrusion caused by the film Degradation of the layer and reduction of leakage current 201119057 3 l43Jtwf.doc/n problem that may be formed on the surface of the first and m layers 230, thereby improving the electrical performance of the thin film solar cell 2 详细. In detail, 'in the insulating region P2 When the first conductive layer 22, the light-changing layer and the second conductive layer are not completely removed or electrically insulated from the light-changing region P1, the photoelectric conversion layer 23 is also subjected to light current generation. Similarly, the 'first conductive layer 22 (), photoelectric conversion 230 and the side surface of the second conductive layer are also The leakage current may occur. So - by filling the barrier material in the third opening 242 = help to improve the overall _ solar cell short-circuit current (^ shuntresistance) and shunt resistance increase When the current is relatively small, the conversion efficiency of the thin film solar cell can be improved, and the thin film solar cell has better electrical conductivity. The barrier material 25 includes an insulating material, wherein the material y is made of inorganic or organic materials. The inorganic material is, for example, fossil eve, catalyzed stone, nitrous oxide, carbonized stone, oxidized, oxidized, and combined, and the organic material is, for example, photoresist, benzocyclobutene, series = ^ amine, poly brewing Amines, polydecenes, polyalcohols, polyepoxys, polystyrenes, resins, polyethers, poly-members or combinations thereof.兀', ft's because of the barrier material 250 of the thin film solar cell of the present embodiment, and covering the side surface of the first conductive layer (10) and the photoelectric conversion layer 23, to prevent water reading Deterioration of the aging layer and improvement of the thinness: The leakage surface of the 23° side of the conversion layer may be formed, and the electrical conversion efficiency of the thin film solar cell may be improved. Further, the present invention also provides a method of fabricating the above thin film solar cell 200, which is explained below. 4A through 4H are flow charts showing the fabrication of a thin film solar cell according to an embodiment of the present invention. Referring to FIG. 4A, first, the substrate 210 mentioned above is provided, wherein the substrate 21A may be a transparent substrate such as a glass substrate. Next, referring to FIG. 4B, the first conductive layer 22 mentioned above is formed on the substrate 210, wherein the first conductive layer 22 is formed, for example, by using the material of the transparent conductive layer mentioned above to form the first conductive layer. The 22G method is, for example, sputtering, metal organic chemical vapor deposition (MOCVD), or evaporation. Referring to FIG. 4C, the above-mentioned first opening-opening 222 is formed on the first conductive layer 22A such that the first opening 222 exposes a portion of the substrate 21'' and forms a series-connected secondary battery ( The front electrode (f_t electrode) of sub eell). In the present embodiment, the first opening 222 is formed by, for example, a laser process to pattern the first conductive layer 22A. Next, referring to Fig. 4D', the above-mentioned photoelectric conversion layer 23 is formed on the first conductive layer 220. In the present embodiment, the photoelectric conversion layer 23 is formed by, for example, forming the above-mentioned first semiconductor stacked layer 234 on the first conductive layer 22, and then forming the above-mentioned layer on the first semiconductor stacked layer Μ4. And a second semiconductor stacked layer 236. In detail, the method of forming the photoelectric conversion layer 230 is, for example, a radio frequency electric-assisted chemical vapor deposition method (Racho F_eney P1, Enh_d ___ 201119057 31433 twf.doc/n, PECVD), ultra-high frequency plasma-assisted chemical vapor deposition method. (Very High Frequency Plasma Enhanced Chemical Vapor Deposition, VHF PECVD) or Microwave Plasma Assisted Chemical Vapor Deposition (Micr〇wave)

Plasma Enhanced Chemical Vapor Deposition, MW PECVD). Here, the method of forming the film layer can be adjusted depending on which film layer design (such as the structure of the above-mentioned Group IV film or the yttrium-VI compound semiconductor film) is used, and the above description is merely illustrative. Furthermore, the deposited thickness of the first semiconductor stack layer 234 and the second semiconductor stack layer 236 may depend on the needs of the user. Then, please refer to the figure, the second opening 232 mentioned above is formed on the photoelectric conversion layer MO, wherein the second openings 232 expose a portion of the first conductive layer 'and the first semiconductor stacked layer 232 of the photoelectric conversion layer, These first opening 222 are physically connected to the substrate. The manner in which these second openings 232 are formed in the present embodiment is, for example, a laser process to pattern the photoelectric conversion layer 230. Next, please refer to Fig. 4F to form the above-mentioned second conductive layer·=electric conversion layer 23G. In the present embodiment, the formula of ^ is the same as that of the wire-conducting layer (four), and if the method is the same as the above method, the metallurgical electricity is used: Ϊ: The foregoing transparent guides then refer to FIG. 4G to form a third opening 24 on the second conductive layer 24G, which is mentioned above, and the third opening 242 is exposed. section

The conductive layer (10) and the photo-electricity H 15 201119057 31433 twf.doc/n The conductive layer 240 is physically connected to the first conductive layer 22 through these second openings 232. In the present embodiment, the manner of forming these third openings 242 is, for example, a laser process to pattern the second conductive layer 24 () as a back electrode (baek) for forming a plurality of series sub cells. In the present embodiment, after the step of forming the third opening 242, the thin film solar cell can be divided into photoelectric conversion regions as shown in FIG. 4G. 1 disk Insulation zone P2. Next, referring to FIG. 4H, 'filling the above-mentioned barrier material 25 into the third openings 242, wherein the barrier material 25 covers the first conductive layer 22() exposed by the third opening openings 242, The photoelectric conversion layer (9) is a side surface and a top surface and a side surface of a portion of the second conductive layer. In this embodiment, when each of the third openings 242 is formed, the barrier material 250 can be simultaneously filled into the third opening 242, that is, when the third opening 242 is formed by using the laser, the barrier material 25 can be in close proximity. The laser is simultaneously filled in the third opening 242'. In addition to avoiding the deterioration of the film caused by moisture intrusion, the short-circuit current (Isc) and shunt resistance of the thin film solar cell 2 can also be improved. 'The leakage current problem that may be formed on the side surface of the first conductive layer 22〇 and the photoelectric conversion layer 230 can be reduced. Further, the method of filling the barrier material 250 may be by dispensing, ink-jet printing, screen printing, dry film pressing or a coating process. In another embodiment, the step of filling the barrier material 25A may be started after all of the third opening 242 is formed, which may be determined by the user's needs and design. Thus far, the above-described manufacturing method of the thin film solar cell 2 is substantially completed. 16 201119057 31433twf.doc/n It should be noted that if the second conductive layer 24 is a laminated structure, for example, a transparent conductive layer and a reflective layer, and the first conductive layer 22 is a transparent conductive layer, at this time, The transparent conductive layer may be formed on the photoelectric conversion layer, and then the reflective layer is formed on the transparent conductive layer, and then the above-mentioned FIG. 4H 3 is used as a step to form a thin film solar ray which can only illuminate the surface. Γ ί. In addition, the first conductive layer 220 may also be a laminated structure, for example, a lamination of a coffee conductive layer, so that another thin-film solar cell with a single-sided light can be formed. This is not repeated here, but it is said that the 'scale second conductive layer is only an electric layer. In summary, the thin film solar cell of the present invention and the manufacturing method thereof have the following advantages: Since the thin film solar cell has a barrier material: the first conductive layer and the photoelectric conversion exposed by the second opening covering the third opening, The surface 'in this way, in addition to avoiding the moisture intrusion and causing the deterioration of the film layer, the overall short-circuit current (Ise) and shunt stance can be improved to further reduce the leakage of the first conductive layer and the photoelectric conversion layer side surface. The current problem can improve the electrical spotting efficiency of the thin film solar cell. In addition, the present invention also provides a method for fabricating the above-mentioned thin film cathode battery. Although the present invention has been disclosed above by way of example, it is not intended to limit the ordinary knowledge in the technical field of 2, and may be used for some changes and refinements in the month of the moon. Therefore, the invention of the Wei Weiwei of the present invention is subject to the patent specification. 17 201119057 3l433twf.doc/n [Simple description of the diagram] To: 2: The section of the thin-mode solar cell, the figure. The thin-film solar cell of the embodiment is schematically illustrated in Fig. 3 is a flow chart of the film of the money conversion layer in the field energy battery. Figs. 4A to 4H are flowcharts showing the fabrication of the energy battery of the present invention. A thin 骐 sun of the steam application example [Main component symbol description] 100, 200: 110, 210: 120: § 130 132 230 : Regional thin film solar cell substrate electrode layer photoelectric conversion layer 140 : 220 : 222 : 232 : 234 : 234a : 234b : 234c : 236 : second electrode layer first to conductive layer first to open π second opening first to semiconductor male laminate ^ to type semiconductor layer first to intrinsic layer type II semiconductor layer second semiconductor male layer stack 201119057 31433twf .doc/n 236a: third type semiconductor layer 236b: second intrinsic layer 236c: fourth type semiconductor layer 240: second conductive layer 242: third opening 2 5 0 · barrier material P1: photoelectric conversion region • P2: insulation Area

19

Claims (1)

201119057 3l433twf.doc/n VII. Application for patents: a thin film solar cell comprising: 1. a substrate; a first conductive layer disposed on the upper surface of the substrate to expose the iJi portion of the substrate; n S first open one a photoelectric conversion layer disposed on the second opening of the first conductive screen to expose a portion of the first conductive layer, wherein the photoelectrically-connected first openings are physically connected to the substrate; the branch conversion layer is transmitted through the third portion and has a plurality of a side surface, wherein 'these; the opening and the: the electrical redundancy, the same position of the portion' and the second conductive layer is physically connected through the first electrical layer; and] the first conductive material Filling in the third openings, the first conductive layer exposed by the opening and the photoelectric conversion 22: the thinning - 3. The thin film solar energy described in claim 2 The insulating material includes - inorganic material or - organic material. 4. The inorganic material of the thin-film solar power as described in claim 3 includes the oxidized stone, the cerium nitride, the oxynitride, the cerium oxide, the oxidized or the upper rail. 5. The organic material including the photoresist, benzocyclobutene, ring _, cluster, polyamine, etc., in the thin film solar energy described in claim 3, paragraph 3, Polyesters, polyalcohols, polyethylene oxides, polyresins, polyfluorenes, polyketones or combinations thereof. a, 6 · If the scope of the application for patents is thin, the photoelectric conversion layer is a -IV film, a (4) compound semiconductor film, a compound semiconductor, or an organic compound semiconductor, as described in claim 6 In the thin film solar cell, the IV (four) film in i includes at least a-si, (iv) ytterbium, (d) detached, & μ^, stacked (tandem) IV plex film. U 1Ρ16) IV Φ^πΓPlease request the thin film solar cell described in the sixth paragraph of the patent scope, the basin: the financial Weihe Cai conductor _ Baocai* gallium ((Heart); Scaled Marriage (InGaP). A ' Bu ^ τ ^ I Please refer to the solar cell described in item 6 of the _ solar cell, 1 in the 5 Hai II-VI Shao b compound half _ Bao Cai copper indium gallium arsenide (aGS), Jinhua 碲 (CdTe) or its (IS) Tong Lizhong ^Special scope of the solar cell according to item 6 (4), the n-semiconductor thin film includes 3_hex burnt ^ (pcbm) ^: the monthly patent dry circumference mentioned in item 1 The film is too much for the material of the first conductive layer to be a transparent conductive layer, and includes at least one of the reflective layer and the transparent conductive layer. 薄膜Electric 曰12. The thin film solar cell described in the patent patent 围 丨 丨, 201119057 31433 twf.doc/n wherein the material transmissive layer of the second conductive layer comprises at least one of a reflective layer and a transparent conductive layer. The first conductive layer 13 - a method for manufacturing a thin film solar cell, comprising: providing a Forming a first conductive layer on the substrate; forming a plurality of first openings on the first conductive layer, wherein the The first opening exposes a portion of the substrate; forming a photoelectric conversion layer on the first conductive layer; Opening a second opening on the photoelectric conversion layer, wherein the second openings expose a portion of the electrical layer, and the first conversion opening is physically connected to the substrate; Forming a conductive layer on the photoelectric conversion layer; forming a plurality of third openings on the second conductive layer, wherein the third openings expose a portion of the first conductive layer and a portion of the photoelectric conversion layer a surface, and the second conductive layer is physically connected to the first conductive layer through the second openings; and θ , Filling a barrier material in the third openings, wherein the barrier material covers at least the first conductive layer and the side surface of the photoelectric conversion layer exposed by the third openings. 14. The method of fabricating a thin film solar cell according to claim 13, wherein in forming each of the third openings, the barrier material is simultaneously filled in each of the third openings. , 'Process 15', as in the method for fabricating a thin film solar cell according to claim 13, wherein after the steps of the third openings, fill in 22 201119057 3i4j^twf.d〇c/n · the barrier material Within the third openings. 16. The method of fabricating a thin film solar cell according to claim 13, wherein the method of filling the barrier material comprises performing a dispensing, ink-jet printing, screen printing, dry film Press or coating process. 17. The method for fabricating a thin film solar cell according to claim 13, wherein the method for forming the photoelectric conversion layer comprises a radio frequency electric auxiliary chemical vapor deposition method (Radi〇Frequency Plasma Enhanced Enhanced Chemical Vapor Deposition, RF) PEC VD), Very High Frequency Plasma Enhanced Chemical Vapor Deposition (VHF PECVD) or Microwave Plasma Enhanced Chemical Vapor The method for fabricating the thin film solar cell of claim 13 wherein the method of forming the first conductive layer further comprises forming a transparent conductive layer and a reflective layer at least one of On the substrate, the second φ conductive layer is a transparent conductive layer. 19. The method of fabricating a thin film solar cell of claim 13, wherein the method of forming the second conductive layer further comprises forming a transparent layer and a reflective layer on the photoelectric conversion layer, The conductive layer of 5 苐 is a transparent conductive layer. twenty three