201117296 六、發明說明： 【發明所屬之技術領域】 本發明個於-種半導财置之製造裝置及轉體裝置 之製造方法’尤其是關於-觀.、對所敏之位置選擇性地 形成鶴膜的選擇性化學氣相沉積法(選擇性cvd 導體裝置之裝置及其製造方法。 【先前技術】 在具備由石夕等半導體材料所構成的基板之半導體裝置 中，主動7L件或被動元件等的複數個構成要素，係在被絕緣膜 包夾的狀態下疊層於基板上。為了要雜連接複數個構成要 素，而在絕緣膜形成有複數個貫通孔以連結各構成要素間。尤 其是’在設置於基板駐動元件與麵於該基板上的多層配線 之間’係設置有用以電性連接主動元件與多層配線的接觸孔 (contact hole)。例如，在主動元件型则電晶體與p型 M0S電晶體形成於相同絲板之表面的cm〇s(互補式⑽） 構4的兄在邊層於基板上的絕緣層係形成有接觸孔，以使 形成作為N型MQS電晶體之源極電極及汲極電極的N型雜質 擴散區域(N+區域）、與形成作為p型M〇s電晶體之源極電極 及=極電極的P型雜質擴散區域(p+區域)露出。在接觸孔，係 埋设有鶴(W)等金屬材料。被埋設的金屬材料，係發揮作為電 性連接主動元件與配線的内連線之功能。近年來，從可抑制元 件間之不好的相互作用如寄生效應、以及對熱具有較高穩定性 201117296 的觀點來看’鶴已被廣泛使㈣為配線材料。 作為配線之形成方法，習知以來就已廣泛使用覆蓋式 (blanket)CVD。在覆蓋式㈣法中，係在形成有接觸孔的絕 緣f全面’形成有氮化鈦(TiN)膜料用以使配線材料成長的 黏著層(glue layer)。然後，在黏著層之全面，形成有配線材料 例如由鶴所構成的薄膜。之後，去除不需要部位的配線材料。 城，在覆蓋式CVD財，餘是在觀狀全面形成鶏之 賴，所以會發生在接觸孔之開σ周緣成長鶴咖使其開口面 積變窄之所謂的懸突現象(〇verhang)。當發生懸突現象時，由 =可進入於接觸仙部_量就會受魏制，故而接觸孔的埋 =作業變得不充分。_接麻之埋設不m接觸孔之直 徑越小’尤其是40nm以下時’就會變得越顯著。又，在覆蓋 式CVD法巾，由於需要賴後的去除步驟，故而此部分就會 ^加半導體裝置之製造步雜，並且製造縣姨著被去 材料而上升。 因此’近年來’有實施-種同時可削減製造步驟數以及降 低製造成本的選擇性CVD法(參照日本特開平1()侧54號公 報），作為將由配線材料所構成的_只形成於鋪孔等部位 之技術。 【發明内容】 (發明所欲解決之課題） 作為在具備CMOS構造的基板之接觸孔選擇性地形成由 ，.，、所構成的賴之方法，已知有—種在真空腔室内供給六氣化 201117296 氣體與單石夕烧卿4)氣體以形成鶴薄膜的卿還原 而，當同時供給趣峨體與單魏諸於真空腔室 時’在成輯理之抽隨很誠錢之核成長。因此，嫣之 成膜反應會在初贿段進行速率關，使得轉體裝置之生產 處理停滯。 j之選擇性CVD法中，業已檢討為了要改善成膜開始 時的核成長，而在供給單魏氣體之前先供給讀化鶴氣體。 在此方法巾，係在供給反應性高的單錢氣體之前，在接觸孔 之底部的N+區域或P+區域吸附六氟化鶴分子。然後，六氣化 嫣分子會藉由雜板而還原。藉此，可促進鎮薄膜之核成長， 而初期階段的成膜速度會變高。此種的核成長之促進作用，係 藉由進行在練麵减部的魏板之稍已吸附神基板 表面的六氣简之間㈣行的下敍_婦現。細，在先 供給六氟鱗的製程流程中，促賴之初期成長的另一方面， 有使夕基板詳3之使構成源極/汲極區域的石夕受到侵姓之虞。 2WF6+3Si-^2W+3SiF4 、本發明之目的係在於提供一種半導體裝置之製造裝置及 半導體裝置之製造方法，其在形成有N型雜質擴散區域與p 型雜質擴散區域的雜板，可使雜質擴散區域之⑪不受到侵姓 下形成鎢薄膜。 (解決課題之手段） 一為了解決上述課題，依據本發明的第一態樣，可提供一種 半導體褒置之製造方法，制以製造執行細處理的半導體裝 之方法°亥成膜處理係以通過設置於絕緣層的貫通孔使n 201117296 == 質擴散區域露出的方式將由絕緣層 所覆蓋的魏減容於真空腔如，且供給六氟倾氣體及單 石夕烧氣體於真空腔室，以在N型雜f擴舰域與 散區域選擇性地形成由鱗所構成的薄膜。 雜買擴 在該製造方法中，係在進行成膜處理前對真空腔室供 石夕烧氣體以使單魏氣體吸_ N雜f 區域及p型雜 質擴散區域’之後，以超過真空腔室_單钱氣體之分壓的 方式供給六氟化贼體於真空腔室，以執行成膜處理。 為了解決上述課題，依據本發明的第二態樣，可提供一種 半導體裝置之製造裝置，係· ••真空輕，其射收容石夕基201117296 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a manufacturing apparatus for a semi-conducting financial device and a manufacturing method of the same, which are particularly related to the position of the sensitive portion. Membrane selective chemical vapor deposition method (device for selective cvd conductor device and method for manufacturing the same) [Prior Art] In a semiconductor device including a substrate made of a semiconductor material such as Shi Xi, an active 7L device or a passive device The plurality of constituent elements are laminated on the substrate while being sandwiched by the insulating film. In order to connect a plurality of constituent elements, a plurality of through holes are formed in the insulating film to connect the respective constituent elements. 'Between the substrate holding member and the multilayer wiring on the substrate' is provided with a contact hole for electrically connecting the active element and the multilayer wiring. For example, in the active device type, the transistor is The p-type MOS transistor is formed on the surface of the same silk plate, and the brother of the complementary layer (10) is formed with a contact hole on the insulating layer on the substrate to form a contact hole. An N-type impurity diffusion region (N+ region) serving as a source electrode and a drain electrode of the N-type MQS transistor, and a P-type impurity diffusion region forming a source electrode and a = electrode electrode as a p-type M〇s transistor ( The p+ region is exposed. Metal materials such as cranes (W) are embedded in the contact holes. The embedded metal material functions as an interconnect for electrically connecting the active device and the wiring. The poor interactions such as parasitic effects and the high stability of heat 201117296 point of view 'He has been widely used (4) as wiring materials. As a method of forming wiring, it has been widely used since the past (blanket) CVD. In the cover type (four) method, an insulating layer f formed with a contact hole is integrally formed with a titanium nitride (TiN) film material for a bonding layer to grow a wiring material. Then, The adhesive layer is formed in a comprehensive manner, and a wiring material such as a film made of a crane is formed. After that, the wiring material of the unnecessary portion is removed. The city, in the cover type CVD, the balance is formed in the overall view, so it will occur in Contact hole The so-called overhang phenomenon (〇verhang), which causes the opening area to be narrowed by the σ circumference growth crane. When the overhang phenomenon occurs, the quantity that can enter the contact fairy is subject to Wei system, so the contact hole Buried = work becomes insufficient. _ The embedding of the hemp is not the smaller the diameter of the contact hole, especially when it is below 40 nm. The more obvious, the more the cover CVD towel is removed. In this case, the manufacturing process of the semiconductor device is increased, and the manufacturing county is raised by the material to be removed. Therefore, in recent years, there is a selective CVD which can reduce the number of manufacturing steps and reduce the manufacturing cost. The method (refer to Japanese Laid-Open Patent Publication No. Hei. No. Hei 54) is a technique for forming a portion made of a wiring material only at a portion such as a hole. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) As a method of selectively forming a contact hole in a substrate having a CMOS structure, it is known to supply six gas in a vacuum chamber. The gas of 201117296 and the single stone Xishuangqing 4) gas to reduce the formation of the crane film, while simultaneously supplying the fun body and the single Wei in the vacuum chamber, 'in the formation of the rationale with the money of the nuclear growth . Therefore, the film formation reaction of the crucible will be carried out at the rate of the initial bribe, so that the production process of the swivel device is stagnant. In the selective CVD method of j, it has been reviewed that in order to improve the nuclear growth at the start of film formation, the read gas is supplied before the supply of the Weiwei gas. In this method, the hexafluorene crane molecule is adsorbed in the N+ region or the P+ region at the bottom of the contact hole before the supply of the highly reactive monoxide gas. Then, the six gasified ruthenium molecules are reduced by the miscellaneous plates. Thereby, the nuclear growth of the film can be promoted, and the film formation speed in the initial stage becomes high. The promotion of such nuclear growth is carried out by the fact that the Weiqi, which has been slightly absorbed on the surface of the god substrate, has been immersed in the four-segment. Fine, in the process of supplying hexafluoride in the first process, on the other hand, on the other hand, the other side of the growth of the substrate, the stone eve that constitutes the source/bungee area is invaded by the surname. 2WF6+3Si-^2W+3SiF4, an object of the present invention is to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, which can form a miscellaneous plate in which an N-type impurity diffusion region and a p-type impurity diffusion region are formed. The impurity diffusion region 11 is not subjected to the formation of a tungsten film under the invading. (Means for Solving the Problem) In order to solve the above problems, according to a first aspect of the present invention, a method of manufacturing a semiconductor device can be provided, and a method for manufacturing a semiconductor device for performing a fine process can be manufactured. The through hole disposed in the insulating layer reduces the Wei covered by the insulating layer into the vacuum chamber such that the n 201117296 == the diffusion region is exposed, and supplies the hexafluoride gas and the single stone gas to the vacuum chamber. A film composed of scales is selectively formed in the N-type heterogeneous expansion domain and the scattered region. In the manufacturing method, after the film forming process is performed, the vacuum chamber is supplied with a gas to make the gas of the single Wei gas absorb the _N impurity region and the p-type impurity diffusion region to exceed the vacuum chamber. The partial pressure of the single money gas is supplied to the hexafluoride thief in the vacuum chamber to perform a film forming process. In order to solve the above problems, according to a second aspect of the present invention, a semiconductor device manufacturing apparatus can be provided, which is light vacuum and is housed in Shi Xiji.
板的真紐室，而雜板係以通過設置於絕緣層之貫通孔使N _質擴散區域與P型雜f擴散區域露出的方式由絕緣層所 ，盍41氣體供給部’其係對真空腔室供給六氟化鶴氣體； 第2氣體供給部’其倾真空腔室供給單魏氣體；以及高頻 電源’其鑛真皱鎌加高_場的高_源，且對高頻天 線供給高頻功率以將真空腔室_氣體電漿化，該製造裝置係 用以製造執行成麟理的料置之裝置，該細處理係對 收容树基板的真空腔室供給六氟化鶴氣體與單魏氣體，以 對N型雜雜散區軸P _f概區域卿㈣形成由鶴 所構成的薄膜。 在該製造裝置巾，係麵行成縣理前，對真空腔室供給 單石夕烧氣體以使單雜氣體吸瞻N型㈣擴舰域及p型 雜質擴舰域，之後’以超過真空腔室_單魏氣體之分壓 的方式將六氟化職體供給至真空腔室，以執行成膜處理。 201117296 【實施方式】 (第1實施形態） 以下，係參照第1圖至第3圖說明將本發明的半導體裝置 之製造裝置及半導體裝置之製造方法具體⑽第i實施形態。 如第1圖所示，在半導體裝置之製造裝置，係相鄰設置有 用以導入或取出石夕基板的一對搬入/搬出口 Ua、11b。在鄰接 於各搬入/搬出口 11a、llb的位置，係設置有前處理腔室以、 12b。在前處理腔室ua'ub中，係對矽基板之表面進行洗淨， 以作為在前述矽基板形成鎢薄膜之前的處理。又，在鄰接於前 處理腔室12a、12b的位置，係設置有成膜腔室13a、nb。在 成膜腔室13a、13b中，係執行在魏板形成鶴薄膜的成膜處 理。在成膜腔室13a、13b間，係設置有熱處理腔室14。在熱 處理腔室14中，係執行對經前處理後的矽基板施加預定之熱 的熱處理。在半導體裝置之製造裝置中，一對搬入/搬出口 11a、lib與五個腔室i2a、12b、13a、13b、14構成環狀。 在製造裝置之中央，係設置有從二個搬入/搬出口 Ua、llb 及五個腔室12a、12b、13a、13b、14中之任一者將石夕基板朝 下一個步驟移動時所通過的轉移腔室(transfer 。 在製造半導體裝置時，首先成為成膜處理之對象的矽基板 係從搬入/搬出口 lla、llb導入於製造裝置内。搬入/搬出口 11a、lib係相對於被導入的基板具有相同的功能。以下，針對 從搬入/搬出口 lla導入矽基板的情況加以說明。矽基板，係 具備主動元件的N型MOS電晶體與P型MOS電晶體形成於 201117296 同一面上的CMOS(互補式M0S)構造。在具備CM〇s構造的 矽基板，係形成有：形成作為N型M〇s電晶體之源極電極及 汲極電極的N型雜質擴散區域(N+區域）、以及形成作為p型 MOS電晶體之源極電極及沒極電極的p型雜質擴散區域(p+區 域）。在疊層於矽基板的絕緣層係形成有接觸孔，以使N型雜 質擴散區域及P型雜質擴散區域露出。 矽基板，係在被導入於搬入/搬出口 lla之後，首先，透 過轉移腔至15，朝剛處理腔室i2a搬運。在前處理腔室i2a 中，例如，係從位於設置在絕緣層的接觸孔底部之矽基板表 面，去除掉與大氣中之氧等反應成反應物的氧化物層。矽基 板，係在前處理腔室12a經前處理之後，透過轉移腔室15， 朝熱處理腔至14搬運。在熱處理腔室μ中，為了要降低由鶴 所構成的薄膜與底層之界面的電阻，而對藉由上述前處理而露 出的底層執行熱處理。石夕基板，係在經過熱處理之後，透過轉 移腔室15，朝成膜腔室13a搬運。在成膜腔室13a内，係為了 要形成設置於矽基板的接觸孔、即對於導電性比其他部位高的 部位選擇性地形成鎢薄膜，而執行選擇性CVD的成膜處理。 矽基板，係在經成膜處理之後，透過轉移腔室15被搬運 至搬入/搬出口 lla之後，朝製造裝置外搬出。從搬入/搬出口 lib搬運至製造裝置的情況，矽基板，係與從搬入/搬出口 Ua 搬入的情況相同，會在依順序施行前處理腔室12b之前處理、 熱處理腔室14之熱處理、以及成膜腔室i3b之成膜處理之後， 從搬入/搬出口 lib朝製造裝置外搬出。 其次，參照第2圖及第3圖說明成膜腔室13a、13b之構 201117296 成、以及藉由成臈腔室1Sa、13b而執行的成膜處理。 如第2圖所示，成膜腔室13a、⑽，係騎真空槽^。 在真空槽21内，係設置有載置錄板s的基板餘^ 真空槽21，係設置有用以供給原料氣體之六氟化郎叫 及單石夕烧(SiH4)氣體的原料氣體蜂p卜在原料氣體_ 之下 方，係設置有用以將從肩料氣體埠ρι供給的氣體均勾 於真空槽21内的淋浴頭23。 、蚁 在原料氣體槔P1係連結有—個配管，該配管係分歧成單 石夕烧氣體贿管、以及六氟化錢體舰f。在單魏氣體用 配管及六氣化錢翻配管，係分別設置有肋難氣體流量 的流篁控制部MFa、MFC3。流量控制部MFC卜娜^ ,係 執行使用於成膜處理鍵理巾的氣體之流量控制。在潔淨 處理中’係藉由潔淨氣體之來去除依成猶理爾絲真 空槽21内之槽壁或基板載物台22等構件的鎢薄膜。 用以將惰性氣體之氬(Ar)氣體導入於單石夕院氣體用配管 内的惰性氣體用配管，係從比單矽烷氣體用配管之流量控制部 MFC1還罪近下游側開始分歧。又，用以將惰性氣體之氬氣導 入於六氟化鎢氣體用配管内的惰性氣體用配管，係從比六氟化 鎢氣體用配管之流量控制部MFC3還靠近下游側開始分歧。在 上述的各惰性氣體用配管，係分別設置有用以調整氬氣之流量 的流量控制部MFC2、MFC4。流量控制部MFC2、MFC4，係 執行使用於成膜處理及潔淨處理中的惰性氣體之流量控制。在 本實施形態中，流量控制部MFC2以及與其連接的惰性氣體用 配管係構成第2惰性氣體供給部。流量控制部MFC4以及與其 10 201117296 連接的ιό生氣體用配㈣構成第丨惰性氣體供給部。單魏氣 體用配管與流量控制部觸係構成單魏_供給部。單石夕 烧乱體供給部與第2惰性氣體供給部係構成第2氣體供給部。 六氟化絲_緣麵量㈣部赃3翻滅六氟化鶴氣 體供給部。又，六氟化贼體供給部與第1雜氣體供給部係 構成第1氣體供給部。 在基板載物台22,係連接有用以將高頻電場施加於真空 槽21内的高頻電源24。依高頻電場，被導入於真空槽21内 的氣體會電魏。結雜2卜係設置有導人料氣體的潔 淨氣料P2。在真空槽21 係交互地重複進行使用原料氣 體的成膜處理與潔淨處理。在潔淨氣料p2，係連結有用以 將潔淨氣體之tXF2)氣體與惰性驗之氬氣畴地供給至真空 槽21的春淨氣體配管。在潔淨氣體配管，係設置有流量控制 部 MFC5。 在真空槽21，係透過排氣埠p3連結有渦輪泵(加此〇 pump)25。當渦輪泵25驅動時，真空槽21之内壓，就會被減 壓至適於成膜處理或潔淨處理的壓力。在真空槽21、各種氣 體所流通的配管類以及基板載物台22，係分別設置有用以將 真空槽21之内壁、配管類以及石夕基板§之溫度維持在預定溫 度的溫調機構。 矽基板S，係在經過前處理腔室12a、12b之前處理、熱 處理腔室14之熱處理之後，被搬入於成膜腔室i3a、i3b内。 然後，矽基板S，係在被載置於成膜腔室13a、13b内之基板 載物台22的狀態下’藉由設置於基板載物台22的溫調機構加 201117296 熱至預m讀，六氟化魏體及單魏氣體，係從淋洛 頭23均句地擴散而朝真空槽21_給。依以下反應式所示的 六氟化鶴之單魏的還原反應，係在石夕基板s上導電性相對高 的部位進行。亦即，執行選擇性CVD法之成膜。 • 2WF6+3SiH4—2W+3SiF4+3H2，或是 • WF6+2SiH4->W+2SiF3+3H2 在石夕基板S巾導電性相賴的部位，係位於接觸孔之底部 的雜質擴散區域，且對該部位選擇性地形成有鶴薄膜。 當對複數個石夕基板S執行上述成膜處理時，就可從潔淨氣 體用配官供給氟氣與氬氣於真空槽21，並且依細電源％之 =頻電場會在真空槽21誠生，喊行料處理。此時，附 2真空槽21之内壁的鶴薄膜會與使用氟氣的電漿起反應， 六，M '三_郎™3)、四氟魏(卿或氟化氫 空槽21 的内复然後’所生成的氣化物，會與氬氣一同從真 ^ rfrj ㈣給六·鎢氣體與單魏氣體時，在成膜處安 階段驗難發线之贼長。因此，叙賴反應糾 :=段進行速率限制。相對於此’在供給單魏氣體之育 ==六統魏體的狀態開始細處理時，就可促進· =成長，而成膜初期的成長速度會變高。細，此 成。土因…广、面的’、氣化鶴氣體之間進行的以下反應所道 之石夕會有遭ntt雜區域級麵_雜質擴散區越 12 201117296 • 2WF6+3Si-^2W+3SiF4 此情況下，在石夕基板S之表面，係從電子密度The true button chamber of the plate, and the miscellaneous plate is made of an insulating layer by exposing the N − -type diffusion region and the P-type impurity f diffusion region through the through hole provided in the insulating layer, and the gas supply portion of the crucible 41 is vacuumed The chamber supplies the hexafluoride gas; the second gas supply unit 'the tilting vacuum chamber supplies the single-wei gas; and the high-frequency power source' has its high _ source, and the high-frequency antenna is supplied to the high-frequency antenna. The high-frequency power is used to plasma the vacuum chamber_gas, and the manufacturing device is used to manufacture a device for performing a slab, which supplies the hexafluoride gas to the vacuum chamber of the tree substrate. A single Wei gas forms a film composed of cranes for the N-type stray region axis P _f. In the manufacturing device towel, before the line is formed into a county, the vacuum chamber is supplied with a single stone gas to make the single gas to absorb the N-type (four) expansion ship domain and the p-type impurity expansion ship domain, after which the vacuum is exceeded. The partial fluorination of the chamber_monowei gas supplies the hexafluoride body to the vacuum chamber to perform a film forming process. [Embodiment] (Embodiment) Hereinafter, a manufacturing apparatus of a semiconductor device and a method of manufacturing a semiconductor device according to the present invention will be described in detail with reference to Figs. 1 to 3 in an eleventh embodiment. As shown in Fig. 1, in the manufacturing apparatus of the semiconductor device, a pair of loading/unloading ports Ua and 11b for introducing or taking out the stone substrate are provided adjacent to each other. A pretreatment chamber 12b is provided at a position adjacent to each of the loading/unloading ports 11a and 11b. In the pretreatment chamber ua'ub, the surface of the ruthenium substrate is washed as a process before the tungsten film is formed on the ruthenium substrate. Further, film forming chambers 13a and nb are provided at positions adjacent to the pretreatment chambers 12a and 12b. In the film forming chambers 13a, 13b, a film forming process for forming a film of a crane in a Wei plate is performed. A heat treatment chamber 14 is provided between the film forming chambers 13a and 13b. In the heat treatment chamber 14, a heat treatment for applying a predetermined heat to the pretreated ruthenium substrate is performed. In the manufacturing apparatus of the semiconductor device, the pair of loading/unloading ports 11a and 11b and the five chambers i2a, 12b, 13a, 13b, and 14 are formed in a ring shape. In the center of the manufacturing apparatus, it is provided to pass through the two loading/unloading ports Ua and 11b and the five chambers 12a, 12b, 13a, 13b, and 14 to move the Shishi substrate to the next step. In the case of manufacturing a semiconductor device, the ruthenium substrate which is the target of the film formation process is introduced into the manufacturing apparatus from the loading/unloading ports 11a and 11b. The loading/unloading ports 11a and lib are introduced with respect to each other. The substrate has the same function. Hereinafter, a case where the ruthenium substrate is introduced from the loading/unloading port 11a will be described. The 矽 substrate is an N-type MOS transistor having an active device and a P-type MOS transistor formed on the same surface of 201117296. a CMOS (complementary MOS) structure, in which a NMOS substrate having a CM 〇s structure is formed with an N-type impurity diffusion region (N+ region) which is a source electrode and a drain electrode of an N-type M 〇s transistor, And forming a p-type impurity diffusion region (p+ region) as a source electrode and a gate electrode of the p-type MOS transistor. A contact hole is formed in the insulating layer laminated on the germanium substrate to allow an N-type impurity diffusion region and P type impurity expansion After the substrate is introduced into the loading/unloading port 11a, first, it is conveyed toward the processing chamber i2a through the transfer chamber to 15. In the pretreatment chamber i2a, for example, the slave is located in the insulation. The surface of the substrate at the bottom of the contact hole of the layer removes the oxide layer which reacts with oxygen in the atmosphere to form a reactant. The substrate is pretreated by the pretreatment chamber 12a, passes through the transfer chamber 15, and is heat treated. The cavity is transferred to 14. In the heat treatment chamber μ, in order to reduce the electrical resistance of the interface between the film and the bottom layer composed of the crane, heat treatment is performed on the bottom layer exposed by the above pretreatment. The stone substrate is heat treated. Thereafter, it is transported to the film forming chamber 13a through the transfer chamber 15. In the film forming chamber 13a, a contact hole provided in the ruthenium substrate, that is, a portion having higher conductivity than other portions is selectively formed. The tungsten thin film is subjected to a film formation process by selective CVD. After the film formation process, the substrate is transported to the carry-in/out port 11a through the transfer chamber 15, and then carried out outside the manufacturing apparatus. When the loading/unloading port lib is transported to the manufacturing apparatus, the substrate is processed in the same manner as in the case of loading from the loading/unloading port Ua, and the heat treatment chamber 14 is heat-treated before the pre-treatment chamber 12b is sequentially applied. After the film forming process of the film forming chamber i3b, the loading/unloading port lib is carried out from the outside of the manufacturing apparatus. Next, the structure of the film forming chambers 13a and 13b and the structure of the film forming chambers 13a and 13b will be described with reference to FIGS. 2 and 3, and The film forming process is performed by forming the chambers 1Sa and 13b. As shown in Fig. 2, the film forming chambers 13a and (10) are mounted on the vacuum chamber. In the vacuum chamber 21, the recording board s is provided. The substrate vacuum chamber 21 is provided with a raw material gas bee for the supply of the raw material gas, and a raw material gas of the sulphuric acid (SiH4) gas, which is provided below the raw material gas _ The gas supplied from the gas 埠ρι is hooked on the shower head 23 in the vacuum chamber 21. The ant has a pipe connected to the raw material gas 槔P1, which is divided into a single stone gas burning tube and a hexafluoride money ship f. In the single Wei gas piping and the six gasification money turning piping, the flow control units MFa and MFC3 having the ribbed gas flow rate are respectively provided. The flow rate control unit MFC is performing flow control of the gas used for the film forming process of the bonding towel. In the cleaning process, the tungsten film of the member such as the groove wall or the substrate stage 22 in the yule silk vacuum chamber 21 is removed by a clean gas. The piping for the inert gas for introducing the argon (Ar) gas of the inert gas into the piping for the single-stone gas is to be diverged from the downstream side of the flow rate control unit MFC1 of the monooxane gas piping. In addition, the piping for the inert gas for introducing the argon gas of the inert gas into the piping for the tungsten hexafluoride gas is branched from the downstream side of the flow rate control unit MFC3 of the tungsten hexafluoride gas piping. In each of the above-described inert gas pipes, flow rate control units MFC2 and MFC4 for adjusting the flow rate of the argon gas are provided. The flow rate control units MFC2 and MFC4 perform flow rate control of the inert gas used in the film formation process and the clean process. In the present embodiment, the flow rate control unit MFC2 and the inert gas piping connected thereto constitute a second inert gas supply unit. The flow rate control unit MFC4 and the iv gas (4) connected to the battery 10201117296 constitute a second inert gas supply unit. The single-wei gas piping and the flow control unit are connected to each other to form a single-wei supply unit. The single stone etched body supply unit and the second inert gas supply unit constitute a second gas supply unit. Hexafluoride wire _ edge amount (four) part 赃 3 defensive hexafluoride gas supply department. Further, the hexafluoride thief supply unit and the first impurity gas supply unit constitute a first gas supply unit. The substrate stage 22 is connected to a high-frequency power source 24 for applying a high-frequency electric field to the vacuum chamber 21. According to the high frequency electric field, the gas introduced into the vacuum chamber 21 is electrically charged. The noisy 2 is provided with a clean gas P2 for guiding the gas. The film forming process and the cleaning process using the raw material gas are alternately repeated in the vacuum chamber 21. In the clean gas material p2, a spring gas gas pipe for supplying the clean gas tXF2) gas and the inert gas to the vacuum tank 21 is connected. In the clean gas piping, a flow control unit MFC5 is provided. In the vacuum chamber 21, a turbo pump 25 is connected to the exhaust port 3p3. When the turbo pump 25 is driven, the internal pressure of the vacuum chamber 21 is depressurized to a pressure suitable for the film forming process or the clean process. The vacuum chamber 21, the piping through which the various gases are passed, and the substrate stage 22 are provided with temperature adjustment mechanisms for maintaining the temperature of the inner wall of the vacuum chamber 21, the piping, and the stone substrate at a predetermined temperature. The tantalum substrate S is processed in the heat treatment chamber 14 before being processed by the pretreatment chambers 12a and 12b, and then carried into the film forming chambers i3a and i3b. Then, the substrate S is placed in the state of the substrate stage 22 placed in the film forming chambers 13a, 13b, 'by the temperature adjustment mechanism provided on the substrate stage 22 plus 201117296 heat to pre-m read , hexafluoride Wei and Wei Wei gas, from the shower head 23 uniformly spread to the vacuum tank 21_. The reduction reaction of the hexafluorene of the hexafluorene crane shown in the following reaction formula is carried out on the site where the conductivity is relatively high on the stone substrate s. That is, film formation by the selective CVD method is performed. • 2WF6+3SiH4—2W+3SiF4+3H2, or • WF6+2SiH4->W+2SiF3+3H2 is located in the impurity diffusion region at the bottom of the contact hole in the conductive portion of the Shishi substrate. A crane film is selectively formed on the portion. When the film forming process is performed on the plurality of stone substrates S, the fluorine gas and the argon gas can be supplied from the clean gas to the vacuum chamber 21, and the frequency electric field of the fine power source will be in the vacuum tank 21 , shouting the material processing. At this time, the crane film attached to the inner wall of the vacuum chamber 21 reacts with the plasma using fluorine gas, six, M 'three _ lang TM3), tetrafluoro Wei (clear or hydrogen fluoride vacant 21 and then ' The generated vapor will be combined with argon gas from the true ^rfrj (4) to the hexa-tungsten gas and the single-wei gas, and the thief of the refractory line will be tested at the film-forming stage. Therefore, the reckless reaction is correct: = When the rate is limited, the growth rate of the initial stage of film formation is increased, and the growth rate at the initial stage of film formation is increased. The soil reaction due to the following reaction between the wide and the surface of the 'gasification' gas will be affected by the ntt impurity region level _ impurity diffusion zone 12 201117296 • 2WF6+3Si-^2W+3SiF4 In the case, on the surface of the stone substrate S, the electron density
::先進行鎢薄膜之成長。因此，在N型雜質擴散區域的: ，成長速度與P型雜質擴散區域的鶴之成長速度之生 知大的差異。具體而言，N型雜f擴散區域的電 X :質:散區域的電子密度高，結果，N型雜質擴散_』 厚’會比p型雜質擴散區域的膜厚還大幅地變高。換句話說，、 在具有CMOS構造的雜板s巾’膜之成長速度，係依 接觸孔之底部的雜質擴散區域是N型或是P型而異，结 果’在接觸孔間會在鶴薄膜之厚度上發生較大的不均等、。 ^實施形態中，為了要抑制雜質擴散區域之石夕的侵银或接 =間的厚度的不解，而在執行將六統鶴氣體及 早魏氣體均供給至成膜腔室13a、13b的成膜處理之前，合 比六氟化魏_早料魏_供給至細財以、㈣ 内。 以下’係參料3圖說卿具有CMC)S構造神基板§ 所執订的單魏氣體之供給處理及細處_執行時序、以及 其等的處理條件。 仏第®係顯示在成膜腔室H既所執行的單石夕烧氣體 ，給處理時及_處理_各魏體之供給咖、以及成膜腔 室^3a、13b内的各種氣體之分壓。第3圖⑷、⑼、⑹、⑹ ，刀別顯不單石夕烧氣體(狐)、六氟化鶴氣體(WF6)、供給至六 氟化鶴用料的氯⑽氣體之供給時間、以及成膜腔室内的單 石夕烧氣體及六氟似|氣體之各分壓。 201117296 如第3圖所示，在時序tl至時序t2之期間，在真空槽a 内供給有單魏《錢氣。單魏鐘，係_於透過形成 於絕緣膜的接觸孔而露出的N型雜f擴散區域及p型雜質擴 散區域。在單魏氣體供給處理中，例如，將單魏氣體之流 量蚊於谈他咖版㈣、將缝之妓設定於u % U) W/s(2Gs_)、以及料雜21切壓蚊㈣4ρ 維持15秒。 =傻’研序t2至時序t3之期間，從單魏氣體供給處 理連、..貝供給單魏氣體，並且供給六氣化鶴氣體。藉此，開始 成膜處理’並在絲板S之接觸孔形成有鶴薄膜。在此期間， 構成通過接觸孔而露出的N型雜f擴散區域及 區域之梦，係由科貌氣體繼。換句話說，_== 體供給處理先行實施，所以吸附於雜質擴散區域的單魏氣體 =，會輯絲_倾域切魏先軸六氟倾氣體起 =應°結果’構成雜質擴舰域切的侵财受到抑制。在該 ^處理中’例如’―邊將單魏氣體之流量轉於冰 ⑽/__)、將六氟化嫣氣體之流量維持於叫:: First grow tungsten film. Therefore, in the N-type impurity diffusion region: the growth rate and the growth rate of the crane in the P-type impurity diffusion region are greatly different. Specifically, in the N-type impurity-diffusion region, the electron density of the impurity region is high, and as a result, the N-type impurity diffusion _"thickness" is significantly higher than the film thickness of the p-type impurity diffusion region. In other words, the growth rate of the film in the CMOS structure of the slab is different depending on whether the impurity diffusion region at the bottom of the contact hole is N-type or P-type, and the result is a film between the contact holes. A large inequality occurs in the thickness. In the embodiment, in order to suppress the intrusion of the silver in the impurity diffusion region or the inconsistency in the thickness of the contact, the formation of both the Liutonghe gas and the early Wei gas to the film forming chambers 13a and 13b is performed. Before the membrane treatment, the mixture is fed to the fine hexafluoride Wei _ early feed Wei _ to the fine money, (4). The following 'Materials' reference 3 shows that the CMC) S-structured substrate § is supplied with the supply processing of the single-wei gas, the details of the execution timing, and the processing conditions thereof. The 仏 ® 系 system displays the single-stone gas that is executed in the film forming chamber H, the processing time, and the partial pressure of the various gases in the film forming chambers ^3a, 13b. Fig. 3 (4), (9), (6), (6), the time of supply of the chlorine (10) gas supplied to the hexafluoride crane, and the supply time of the sulphur gas (fox), hexafluoride gas (WF6) The partial pressure of the single stone gas and the hexafluoride gas in the membrane chamber. 201117296 As shown in Fig. 3, during the period from t1 to t2, a single Wei "money gas" is supplied in the vacuum chamber a. The single-wei clock is an N-type hetero-f diffusion region and a p-type impurity diffusion region which are exposed through a contact hole formed in the insulating film. In the single-wei gas supply process, for example, the flow rate of the single-wei gas is discussed in the version (4), the enthalpy of the seam is set to u % U) W/s (2Gs_), and the residue of the cut-off mosquito (4) 4p is maintained. 15 seconds. = Silly 'During the period from t2 to t3, the single Wei gas is supplied from the single Wei gas supply, and the Wei gas is supplied, and the six gasified crane gas is supplied. Thereby, the film forming process is started, and a crane film is formed in the contact hole of the wire board S. During this period, the dream of constituting the N-type hetero-f diffusion region and the region exposed through the contact hole is followed by the appearance gas. In other words, the _== body supply process is implemented first, so the single Wei gas adsorbed in the impurity diffusion region =, the set wire _ 倾 domain cut Wei pre-axis hexafluoride tilt gas = should result in 'conformity' expansion of the ship domain The cut of wealth has been suppressed. In the ^ process, for example, the flow rate of the single Wei gas is transferred to the ice (10) / __), and the flow rate of the ruthenium hexafluoride gas is maintained.
Pam /s(施㈣、明_槽21之内壓轉於 — 邊以成膜腔室13a、13b肉沾儿祕 燒氣體之分壓還高的方式，將:氟化：；^得比單石夕 至真空槽2】内。 統^獻早魏氣體供給 本案發明人，係在時序tl至時成 擴政區域與P型雜質擴散區域之嫣薄_度成為二= 14 201117296 情形來看，有關單魏氣體供給的條件，可以說是 分地使單魏吸附於N型雜質擴散區域及p型雜質擴散 的條件。亦即，可以說是在鶴薄膜形成時的初期階段，供給至 -槽1内的/、氟化鶴氣體、與比六敦化鶴氣體還早供給至 真二槽21並簡婦㈣散區酬單魏紐有助於成膜 體的供給量，係可刺從取自各種條件的鶴 、/、早石、元氣體之供給量的關係中導出的實測值。 也可適用從各種數值計算中導出的推定值。無論在何種情況， i目擴散區域是否受繼之情況，還更能簡單地 掌握此種侵韻。 又’本案發明人，也已確認N型雜質擴散 的成膜速度均—因此，只= 型雜質擴散區域均擴散區域與p 區域使單魏型雜質擴散 區域之卿:成：=成:^ 分壓超過單石夕烧氣體主1%内的六氣化鶴氣體之 度就會比單二成:初期的六— 擴散區域之侵敍，所以藉由t如上此’由於容易發生對雜質 理，稭由實知如上所述的單矽烷氣體供給處 區域之㈣魏抑制效果就可更加顯著。 (SiH2F6)等所謂三嫩(S_、氟矽酸 或對ϋ轳+八& 予式所表示的鎢以外之反應生成物 、成刀之構件的吸附，所以可藉由溫調機構來加熱真空 201117296 槽21及配管’以將真空槽21之内壁或供給各種氣體的配管之 溫度維持在80。(：。又，可分別藉由溫調機構來加熱基板載物 台22，以將被載置於基板載物台22的基板s之溫度維持在28〇 X：。 依據第1實施形態，可獲得如下效果。 (1)在N型雜質擴散區域及p型雜質擴散區域形成由鎢所 構成的薄膜之成膜處理之前’對成膜腔室13a、13b供給單矽 烷氣體。亦即，在接續於單矽烷氣體供給處理之後的成膜處理 時，會在構成N型雜質擴散區域及P型雜質擴散區域的矽吸 附單矽烷氣體。然後，可推測吸附於N型及p型雜質擴散區 域的單矽烷之一部分會分解而變成矽烷自由基(SiH3)。亦即， 可推測在經加熱過的鋁或鎳等之金屬膜上單矽烷會分解，而在 矽基板上也會發生相同的現象。又，由於矽烷自由基的反應性 同，且易與六氟化鎢起反應，所以容易形成鎢膜。另一方面， 絕緣膜上的單魏*會解誠是在單魏分子之狀態下吸 附因此’與石夕烧自由基比較，其與六化鶴之反應性會較為 不充刀又，由於單石夕烧分子從絕緣膜上的脫離也較快速，所 以鎢膜較不易在絕緣膜上形成。 =，在執行成膜處理時，係以真空腔室内的六氟化鎢氣體 之分壓超過單魏氣體之分㈣方式，供給六氟麟氣體及單 石夕，II體。該情況’由於構成N型雜s擴散區域或p型雜質 擴散區域⑽可由單魏氣體所覆蓋，所以單雜氣體的石夕比 起構成N型雜質擴散區域或p型雜質擴散區域神，可較優 先地與,、氟化鶴氣體起反應。因此，可抑制触雜質擴散區域 16 201117296 的石夕之侵姓。 另外，在以真空腔室内的六氟化鶴氣體之分壓超過單魏 氣體之分㈣方式供給六氟倾氣體及單雜氣體的情況，成 膜初期的六1化贼體之濃度會比私絲_濃度還高。因 而’較容易發生對雜質擴散區域之侵韻。此點，藉由執行如上 述的單械紐供祕理，則對雜質概區域之㈣侵敍抑制 效果就更為顯著。 (2)N型半導體區賴自由電子密度，触p魏質擴散 區域的自由電子密度還高。在成膜處理時，鶴薄膜，係以電子 密度較高的部佩雜板_L的其他部位還更優先地成長。因 此，比起P型雜質擴散區域係以N型雜質擴散區域中的鎢薄 膜之成長速度較高’且在二個雜質擴散區域間不易在鎢薄膜之 膜厚上發生差異。因此，若在細處理前供給單魏氣體的 話，則由於吸附於二個雜質擴散區域的單矽烷與六氟化鎢氣體 會起反應’所以二個雜質擴散區域間的鎢薄膜之成長速度之差 異會被緩和。然而，若單矽烷未被充分地吸附及於雜質擴散區 域之全體，則由於雜質之型態會對成長反應帶來影響，結果， 會在成長速度上發生差異。此種成膜速度的差異，係顯示單矽 烧氣體對N型雜質擴散區域及p型雜f擴散區域之吸附是否 充刀、換句話說構成石夕基板的石夕是否會被侵钱之指標。 此點，依據本發明，則設定了單矽烷氣體之供給條件，俾 使形成於N型雜質擴散區域及P型雜質擴散區域的鎢之膜厚 成為相同。藉此，可縮小二個雜質擴散區域間的薄膜之差異， 並且可更確實地抑制二個雜質擴散區域的矽之侵蝕。又，與直 201117296 接測定雜貝擴散區域是否被侵韻的情況相較，較能簡單地掌握 此種的侵名虫。 (j)在單魏供給處理時，當未從六氟化嫣氣體用配管供 給六氟傾氣_航，就會有單魏氣體稍至六氟化鶴氣 體用配g内之虞。藉此，逆流而來的單石夕烧氣體與殘存於六敦 化鶴亂體用配管内的六氟化鎢氣體就會起反應，而有反應生成 物吸附於六氟似！氣_配f内之虞。該航，在成膜處理 時，會從六氟化鶴氣體用配管同時將六氟化鶴氣體與反應生成 物供給至真空槽21内，而反應生成物會附著於石夕基板S之絕 緣膜上，有降低半導體裝置的良率之虞。 此點，依據本發明，則在單魏氣體供給處理時，從單矽 烧现體用配管供給單石夕院氣體的同時，也會從六氣化鶴氣體用 配管供給惰性氣體。藉此，由於可抑制單魏氣體逆流至六氟 ，鶴氣體用配管，所以可避免配管中的六氟化鶴氣體與單魏 氣體之反應且可抑制反應生成物附著於六氟化鶴用配管之内 壁。亦即’在成膜處理時，可抑制反應生成物與六氣化鶴氣體 一同供給至真空槽21内並附著於石夕基板S，且可抑制半導體 裝置之良率的降低。 (4)在成膜處理時，六氟化齡依單魏而還原，並形成 由鶴所構成的薄膜。然而’在六氟化鶴氣體與單魏氣體之反 I’外’也包含有三氣卿啤跑石夕酸 卿6)相SlHxFy之化學式麵合物。此種的化合物， 係附著於單魏氣體用崎或六氟化__配管及真空槽 21之内在舰處理中有時會從崎或真空槽之魄脫離。 201117296 然後，經脫離的化合物相著於石夕基板s之絕緣膜上等並未形 成有鎢薄膜的雜，且因與故化錢行還原反應，而有鶴薄 膜被形成之虞。 此點，依據本發明，則藉由將六氟化鶴氣體用配管、單石夕 ，氣體舰管、料氣_配管及真雜21之_的溫度維 、在0C貞卩可抑制起gj於溫度較低而使六氟化鶴氣體虚單 魏氣體之反練生_ siiixFy_於上述各綺或真雜 1之内壁。又，也可抑制起因於溫度較高而發生紐xFy之熱 分解生成物。另外，g己管或真空槽21之_的溫度，係設定 ;60 C以上且150 C以下之範圍，較佳為設定於啊左右。 [第2實施形態] 尸在第1實施形態中，係在執行成膜處理之前，供給單石夕烧 乳體於成膜腔室13a、13b之真空槽2卜在第2實施料中， 由於是在單魏氣體供給處理之後，為了要去除真空槽21内 =餘_ ’而執行魏處理。剩餘神，係指在成膜處理中 理爆m要· _，亦即，在單魏氣體供給處 後滯留於真空槽21喊絕緣層上的單顿或構成由此而 成生的化合物之元素。 理、施形祕執行㈣4 ®所示的單魏氣體供給處 一軋处理、及成膜處理所構成的一系列處理，取代第3圖 t = 2處理。以下，係參照第4圖說明單魏氣體供給 处里、排氣處理、成膜處理以及此等的條件。 供顯示在成膜腔室13a、13b所執行的單纖體 供、，·口處理時、排氣處理時、及成膜處辦的各魏體之供給時 19 201117296 間、成膜腔室13a、13b内之各種氣體的分壓。帛4圖(a)、（b)、 (c)、（d)、（e)係分別顯示單石夕烧卿4)氣體、供給至單石夕烷氣體 用配管之氬(Ar)氣體、六氟化鶴（WF6)氣體、供給至六氣化鹤 氣體用配管之氬氣的供給時間、以及成膜腔室内的單石夕燒氣體 及六氟化鎢氣體之各分壓。 如第4圖所* ’在時序tl至時序t2之期間，於真空槽a 内，從單石夕烧氣體用配管供給單石夕燒氣體、以及從六氣化鶴 體用配官供給氬氣。單號氣體，係吸附於透過形成於絕緣膜 的，觸孔而露出的N型雜質擴散區域及p型雜f擴散區域。、 在早石夕烧氣體供給處理中，例如，將單梦烧氣體之流量設定於 5·^ X l〇3Pam3/S(l〇sccm)、將氬氣之流量設定於u & 1〇 Pam3/s(2〇Sccm)、以及將真空槽21之内墨設定於 維持15秒。 ·亚 之後’在時序t2至時序t3之期間，為了要去除真空槽a 内之剩餘_ ’而從二_性氣體耻管供給氬氣，以執行排 氣處理。在私絲體或_私錢_生成合物 7緣層上«空槽21内的情況’構成單魏氣體或依該單 :减體而生成的化合物之料助於鎮薄膜之核形成。因此， 膜之選擇性形成受到阻礙之虞。關於此，若執行上述的 ，氧處理，則可在成膜處理前，對在單魏氣體供給處理中所 ^成=版單魏氣體魏料靴_生朗化合物 Ϊ擴丁^域3，可維持成膜處理時的選擇性，並且可抑制雜 質擴晶域之錢。在排氣處理中，例如係將從單魏氣體用 •己官及六氟化鶴氣體用配管供給的氬氣之流量設定於现 20 201117296 1〇3pamVs(15sCCm)、以及將真空槽21之内壓設定於〇.4Pa，並 維持1秒。 然後，在時序t3至時序t4之期間，六氟化鶴氣體與單石夕 烧氣體被供給至真雜2卜藉此，颜處關始，而在石夕基 板之接觸孔形成有觸膜。在此成麟理巾，例如係—邊將單 矽烷氣體之流#設定於5.9xlG3pam3/s(1Gseem)、將六氣化鶴 氣體之/爪里〇又疋於11.8xl〇3pam3/s(2〇sccm)、以及將真空槽21 =内壓維持於〇.4Pa，一邊以成膜腔室13a、13b内的六氣化嫣 氣體之分壓變成為比單魏氣體之分壓還高的方式，將六氣化 鎢氣體及單矽烷氣體供給至真空槽21内。 即使在第2實施形態中，也是以與第1實施形態相同的條 件在成膜處理之前執行科絲體供給處理。因此，在從接觸 孔露出的N型雜質擴散區域及p型雜質擴散區域，可充分地 吸附單石夕烧氣體。又，各種氣體用配管或真空槽21之内璧或 是矽基板S之各溫度，也是與第丨實施形態相同。 第2實化形態中，係在成膜處理前使單石夕烧吸附於n型 雜質擴散區域及P型雜質擴散區域之後，為了要去除剩餘的單 矽烷等，而進行排氣處理。藉此，在成膜處理時可抑制兩雜質 擴散區域的矽之侵蝕，並且可藉由排氣處理而去除剩餘的矽。 因此，可從成膜處理之初期將真空槽21之内部設定在適於成 膜處理的條件。㈣侵崎制效果，係在真空槽21内的六氟 化鎢氣體之分壓超過單矽烷氣體之分壓的情況，只要實施上述 的成膜處理，就更為顯著。 依據第2實施形態，除了依第丨實施形態所得的效果之 21 201117296 外’還可獲得以下的效果。 ㈣(=單雜_供給處理時，料魏氣舰給至真空 ^行排Γ旦知止早石夕貌氣體之供給，就會對真空槽21内 可在細處财軸鮮魏《或依該單 :礼體所生成的化合物進行排氣。因此，可一邊維持成膜處 1:選擇性’一邊抑制雜質擴散區域的矽之侵蝕。因而，從 理之初期，可將_21之内較定在適於成膜處理 的條件。 ⑹在排减理時，可從單魏氣_ 體用配管之雙方灼供s古〜 、亂化竭乱 g之又方均ί、給絲至真空槽21。藉此，可充分地確 保排氣處理時所供給的氬氣之量。 ⑺藉由從單魏氣體魏管及六1化魏翻配管之雙 ，方均供給絲，即使兩配管中之—她管發生料情況，也可 從正吊的配官供給氬氣。因而，可提供-種可靠度高的製造裝 置、以及可靠度高的料體裝置之製造方法。 也可變更上述的各實施形態如下。 也可在母次對一片矽基板S進行成膜處理時，執行淨 處理。 心、' 产·除了氟氣以外，也可使用六氟化石夕卿6)、三氟化氮㈣) 氣體、三氟化氣(C1F3)，作為潔淨氣體。 •除了氬氣以外，也可使用氮(N2)氣體或氦(He)氣體，作 為排氣處理時供給至真空槽21 _惰性氣體、以及與潔淨氣 體同時供給的惰性氣體。 •遍及於成膜處理、單矽烷氣體供給處理及排氣處理，用 22 201117296 以維持各種配管及成膜腔室❿、】％ 度，要維持於6叱以上且]5〇。〇以下即可。土 ’各溫度之溫 惰性氣=::理時：然已從與六氟化鎢氣體用配管連結的 祝糊心、以及與單魏氣 π 配管供給情性氣體，但是即使只從六氣二:情性氣體用 氣體用配管供物_，也爾(5)=_配管的惰性 •雖然已賤與六氟化職翻配管連 使氟化贼體用崎連結㈣城_配管。即 使在该情況，也可獲得⑴至(5)的效果。 、•單魏氣體供給處爾的條件，也可為ν _ 二域=薄膜之膜厚比Ρ型雜質擴散區域之膜厚還厚的： y亦即，即使單魏氣體之料_於雜f擴散區域之全 體，也可抑制雜質擴散區域的矽之侵蝕。 ❶半導體裝置之製縣置，雖齡別具備有二個—組的搬 入/搬出口 11a、11b、前處理腔室12a、12b以及成膜腔室以、 13b ’但是也可具備各一個的搬入㈣口、前處理腔室、成膜 腔室。又’也可任意地設定各種腔室及搬人/搬出口的數量。、 ❶半導體裝置之製造裝置，除了成膜腔室以外，雖然已具 備前處理腔室、減理腔室以及轉健室，但是也可只具備搬 入/搬出口以及細腔t，也可在細較設置搬人/搬出口。 即使在該情況，也可獲得(1)至(7)的效果。 ❼半導體裝置之製造方法’也可朗於形成接觸孔之前的 步驟，亦即，也可適用於在形成電晶體的雜質擴散層之後，在 23 201117296 雜質擴散層直接形成鶴膜的步驟。 雖^她侧;询彻㈣财施例 2=^:==__較佳實施 於許多形式、結構、佈置、比例、材料、元件和 明本私明因此’本文於此所揭示的實施例應被視為用以說 本㈣。本㈣的伽應由後附申請 翻賴所界疋，並涵蓋其合法均等物，並不限於先前的描述。 【圖式簡單說明】 2係顯林利第1實施職的铸雜置之製造裝置的上 第2圖係顯示成膜腔室的部分剖視圖； 圖3係顯示對成膜腔室供給氣體的時序之時序圖；以及 _2 __之供、㈣體㈣序圖、及成膜 腔至内的分壓之時序圖。 13a成膜腔室 13b成膜腔室 14熱處理腔室 15轉移腔室 【主要元件符號說明】 lla搬入·搬出口 lib搬入·搬出口 12a前處理腔室 12b前處理腔室 24 201117296 21真空槽 22基板座 23淋浴頭 24尚頻電源 2 5调輪豕 MFC1流量控制部 MFC2流量控制部 MFC3流量控制部 MFC4流量控制部 MFC5流量控制部 P1原料氣體埠 P2潔淨氣體埠 P3排氣埠 S紗基板 25Pam / s (Shi (4), Ming_slot 21 internal pressure is transferred to - while the film forming chambers 13a, 13b are in a manner that the partial pressure of the meat is higher, which will be: fluorination:; Shi Xi to the vacuum tank 2]. The system provides the inventor of the early Wei gas. The inventor of the present invention is in the case of the time series t1 to the time when the expansion area and the P-type impurity diffusion area are thinner than _ degrees become two = 14 201117296. The conditions for the supply of the single Wei gas can be said to be the conditions for the diffusion of the single Wei to the N-type impurity diffusion region and the diffusion of the p-type impurity. That is, it can be said that it is supplied to the groove in the initial stage of formation of the crane film. In the 1st, /, the fluorinated crane gas, and the gas than the six Dunhua crane gas are supplied to the true two trough 21 and the simple woman (four) scattered area reward Wei Xin contributes to the supply of the film body, which can be taken from The measured value derived from the relationship between the supply amount of crane, /, early stone, and elemental gas under various conditions. The estimated value derived from various numerical calculations can also be applied. In any case, whether the i-dimensional diffusion region is succeeded or not In the case, it is also easier to grasp this kind of rhyme. In addition, the inventor of this case has also confirmed the N-type impurity expansion. The film formation rate is uniform—therefore, only the diffusion region of the impurity diffusion region and the p region make the mono-Wei-type impurity diffusion region clear: =: into: ^ The partial pressure exceeds six in the main 1% of the single stone The degree of gasification of the gas will be higher than that of the single: the initial six-diffusion zone, so by t as above, because of the easy occurrence of impurities, the straw is known as the monoterpene gas supply as described above. The (4) Wei suppression effect of the region can be more remarkable. (SiH2F6) and other so-called three tender (S_, fluoroantimonic acid or antimony + eight & pre-formed reaction products other than tungsten, adsorption of components Therefore, the vacuum 201117296 tank 21 and the piping ' can be heated by the temperature adjustment mechanism to maintain the temperature of the inner wall of the vacuum chamber 21 or the piping for supplying various gases at 80. (: Further, it can be heated by the temperature adjustment mechanism, respectively. The substrate stage 22 maintains the temperature of the substrate s placed on the substrate stage 22 at 28 〇X: According to the first embodiment, the following effects can be obtained. (1) In the N-type impurity diffusion region and The p-type impurity diffusion region forms a film formation portion of a film made of tungsten Before the treatment, the monocalin gas is supplied to the film forming chambers 13a and 13b. That is, when the film forming process is continued after the monodecane gas supply process, the n-type impurity diffusion region and the P-type impurity diffusion region are formed. The monodecane gas is adsorbed. Then, it is presumed that one of the monodecane adsorbed in the N-type and p-type impurity diffusion regions is decomposed to become a decane radical (SiH3). That is, it is presumed that it is heated aluminum or nickel. On the metal film, monodecane is decomposed, and the same phenomenon occurs on the ruthenium substrate. Moreover, since the decane radical has the same reactivity and is easily reacted with tungsten hexafluoride, the tungsten film is easily formed. The single Wei* on the insulating film will be adsorbed in the state of single Wei molecule, so it is compared with the free radicals of Shixi, and its reactivity with Liuhua crane will be less than that of the knife. The detachment of molecules from the insulating film is also relatively fast, so that the tungsten film is less likely to form on the insulating film. = When the film forming process is performed, the partial pressure of the tungsten hexafluoride gas in the vacuum chamber exceeds the fraction of the single Wei gas (four), and the hexafluoride gas and the monolithic body are supplied. In this case, since the N-type hetero-s diffusion region or the p-type impurity diffusion region (10) can be covered by a single Wei gas, the single-gas gas can be compared with the N-type impurity diffusion region or the p-type impurity diffusion region. Preference is given to the reaction with the fluorinated crane gas. Therefore, it is possible to suppress the invasion of the surname of Shi Xi, which touches the impurity diffusion region 16 201117296. In addition, when the partial pressure of the hexafluoride gas in the vacuum chamber exceeds the single Wei gas (four) method to supply the hexafluoride gas and the single gas, the concentration of the six-dimensional thief in the initial stage of film formation will be private. The silk concentration is also high. Therefore, it is easier to invade the impurity diffusion region. At this point, by performing the single-machine key supply as described above, the effect of suppressing the intrusion of the impurity region is more remarkable. (2) The N-type semiconductor region depends on the free electron density, and the free electron density in the region where the p-different diffusion region is high. At the time of the film formation treatment, the crane film is further preferentially grown in other portions of the portion of the plate _L having a higher electron density. Therefore, the growth rate of the tungsten film in the N-type impurity diffusion region is higher than that in the P-type impurity diffusion region, and it is difficult to make a difference in the film thickness of the tungsten film between the two impurity diffusion regions. Therefore, if a single Wei gas is supplied before the fine treatment, since the monodecane adsorbed to the two impurity diffusion regions reacts with the tungsten hexafluoride gas, the difference in the growth rate of the tungsten thin film between the two impurity diffusion regions is obtained. Will be eased. However, if the monodecane is not sufficiently adsorbed and is present in the entire impurity diffusion region, the type of the impurity affects the growth reaction, and as a result, the growth rate varies. The difference in the film formation speed is indicative of whether the adsorption of the N-type impurity diffusion region and the p-type impurity-f diffusion region by the single-burning gas is filled, and in other words, whether the stone eve which constitutes the stone substrate is invaded. . In this regard, according to the present invention, the supply conditions of the monodecane gas are set, and the film thickness of tungsten formed in the N-type impurity diffusion region and the P-type impurity diffusion region is made uniform. Thereby, the difference in the film between the two impurity diffusion regions can be reduced, and the erosion of the defects in the two impurity diffusion regions can be more reliably suppressed. In addition, it is easier to grasp such invasive insects than the case of measuring whether the miscellaneous diffuse area is invaded by the straight 201117296. (j) When the single-wei supply treatment is performed, when the hexafluoride is not supplied from the ruthenium hexafluoride gas, there will be a single Wei gas slightly to the inside of the hexafluoride gas. In this way, the single-stone gas that flows in the opposite direction reacts with the tungsten hexafluoride gas remaining in the pipe of the six-way chemical crane, and the reaction product is adsorbed to hexafluoride! Gas _ with the inside of f. In the film forming process, the hexafluoride gas and the reaction product are simultaneously supplied from the hexafluoride gas to the vacuum chamber 21, and the reaction product adheres to the insulating film of the stone substrate S. In the above, there is a reduction in the yield of the semiconductor device. According to the present invention, the single gas supply process is performed, and the single gas furnace gas is supplied from the single gasification pipe, and the inert gas is supplied from the six gasification crane gas pipe. In this way, since the single-wei gas can be prevented from flowing back to the hexafluoride and the gas for the crane gas, the reaction between the hexafluoride gas and the mono-wei gas in the pipe can be avoided, and the reaction product can be prevented from adhering to the pipe for the hexafluoride crane. The inner wall. In the film forming process, it is possible to suppress the reaction product from being supplied into the vacuum chamber 21 together with the six gasified crane gas and adhering to the stone substrate S, and it is possible to suppress a decrease in the yield of the semiconductor device. (4) At the time of film formation treatment, the hexafluoride age is reduced by a single wei, and a film composed of a crane is formed. However, the 'anti-I' of the hexafluoride gas and the mono-wei gas also contains the chemical formula of the three gas scented run sylvestris 6) phase SlHxFy. Such a compound is attached to a single Wei gas using a samarium or hexafluoride __ pipe and a vacuum chamber 21, and sometimes it is detached from the crucible or the vacuum chamber during the ship treatment. 201117296 Then, the detached compound does not form a tungsten thin film on the insulating film of the shi s substrate s, and the like, and the ruthenium film is formed by the reduction reaction with the chemistry. In this regard, according to the present invention, by using the temperature of the hexafluoride gas for piping, the single stone eve, the gas vehicular tube, the gas _ piping, and the true impurity 21, the temperature can be suppressed at 0 贞卩. The temperature is lower, so that the hexafluoride crane gas virtual single Wei gas back to the health _ siiixFy_ on the inner wall of each of the above or the true miscellaneous. Further, it is possible to suppress the thermal decomposition product which is caused by the high temperature and the xFy. Further, the temperature of the g tube or the vacuum chamber 21 is set to be 60 C or more and 150 C or less, and is preferably set to about ah. [Second Embodiment] In the first embodiment, the corpse is supplied to the vacuum chamber 2 of the film forming chambers 13a and 13b before the film forming process, in the second embodiment, After the single-wei gas supply treatment, the Wei treatment is performed in order to remove the inside of the vacuum chamber 21. The remaining god refers to a single smear in the film forming process, that is, a single stagnation on the shim insulation layer after the single Wei gas supply, or an element constituting the compound thus formed. . (4) The single-wei gas supply station shown in 4® is a series of treatments consisting of one rolling treatment and film forming treatment, instead of the third graph t = 2 treatment. Hereinafter, the conditions of the single Wei gas supply, the exhaust gas treatment, the film formation process, and the like will be described with reference to Fig. 4. For display of the supply of the wefts in the single-filament supply, the port treatment, the exhaust treatment, and the film formation performed by the film forming chambers 13a and 13b, the film forming chambers 13a and 13b are provided. The partial pressure of various gases within.帛4 (a), (b), (c), (d), and (e) show argon (Ar) gas supplied to the monolithic gas, and gas supplied to the monolithic gas, respectively. The supply time of the hexafluoride crane (WF6) gas, the argon gas supplied to the piping for the six gasification crane gas, and the partial pressure of the monolithic gas and the tungsten hexafluoride gas in the film forming chamber. In the vacuum tank a, the single-stone gas is supplied from the single-stone gas-fired gas pipe, and the argon gas is supplied from the six-gasified crane body in the period from the time t1 to the time t2. . The single gas is adsorbed to the N-type impurity diffusion region and the p-type impurity-f diffusion region which are exposed through the contact holes formed in the insulating film. In the early gas supply process, for example, the flow rate of the single dream gas is set to 5·^ X l〇3Pam3/S (l〇sccm), and the flow rate of the argon gas is set to u & 1〇Pam3 /s (2 〇 Sccm), and the ink in the vacuum chamber 21 was set to be maintained for 15 seconds. Sub-after " During the period from t2 to t3, argon gas is supplied from the bismuth gas shady tube in order to remove the remaining _' in the vacuum chamber a to perform the exhaust treatment. In the case of the private silk or the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Therefore, the selective formation of the film is hindered. In this regard, if the oxygen treatment is performed as described above, it can be used in the single-wei gas supply treatment before the film formation process, and the product can be formed into a single-wei gas-producing shoe. The selectivity at the time of film formation treatment is maintained, and the money of the impurity crystal growth domain can be suppressed. In the exhaust gas treatment, for example, the flow rate of the argon gas supplied from the piping for the Weiwei gas and the hexafluoride gas is set to 20 201117296 1〇3 pamVs (15 sCCm), and the vacuum tank 21 is placed. The pressure was set at 〇.4 Pa and maintained for 1 second. Then, during the period from the time t3 to the time t4, the hexafluoride gas and the monolithic gas are supplied to the true impurity 2, whereby the face is closed, and the contact hole is formed in the contact hole of the stone substrate. In this case, the lining towel, for example, the monoxane gas stream # is set at 5.9xl G3pam3/s (1Gseem), and the six gasified crane gas / claw 〇 〇 is again at 11.8xl 〇 3pam3 / s (2 〇sccm) and maintaining the vacuum chamber 21 = internal pressure at 〇.4 Pa, and the partial pressure of the six gasified helium gas in the film forming chambers 13a and 13b becomes higher than the partial pressure of the single Wei gas. The six tungsten carbide gas and the monodecane gas are supplied into the vacuum chamber 21. In the second embodiment, the cox body supply process is performed before the film formation process under the same conditions as in the first embodiment. Therefore, the monolithic gas can be sufficiently adsorbed in the N-type impurity diffusion region and the p-type impurity diffusion region exposed from the contact holes. Further, the temperature of each of the gas piping or the vacuum chamber 21 or the crucible substrate S is also the same as that of the second embodiment. In the second embodiment, after the monolithic gas is adsorbed to the n-type impurity diffusion region and the P-type impurity diffusion region before the film formation treatment, the exhaust gas treatment is performed in order to remove the remaining monodecane or the like. Thereby, the erosion of the crucible in the two impurity diffusion regions can be suppressed at the time of the film formation treatment, and the remaining crucible can be removed by the exhaust treatment. Therefore, the inside of the vacuum chamber 21 can be set to a condition suitable for the film forming process from the initial stage of the film forming process. (4) The effect of the agitation effect is such that the partial pressure of the tungsten hexafluoride gas in the vacuum chamber 21 exceeds the partial pressure of the monodecane gas, and it is more remarkable as long as the film formation treatment described above is carried out. According to the second embodiment, the following effects can be obtained in addition to the effects obtained in the second embodiment. (4) (= single miscellaneous _ supply processing, the Wei gas ship to the vacuum ^ line to know the supply of gas, will be in the vacuum tank 21 can be in the fine financial axis fresh Wei or This single: the compound produced by the ritual body is exhausted. Therefore, it is possible to suppress the erosion of the enthalpy of the impurity diffusion region while maintaining the film formation 1: selectivity. Therefore, in the initial stage, it is possible to It is suitable for the conditions suitable for film formation. (6) In the case of row reduction, it can be supplied from both sides of the single Wei gas _ body for the s ancient ~, the chaos is exhausted, and the wire is applied to the vacuum tank. 21. By this, the amount of argon gas supplied during the exhaust gas treatment can be sufficiently ensured. (7) The wire is supplied from the single Wei gas tube and the six-dimensional Wei-turn tube, even in the two tubes. - In the case of the material in which the tube is generated, it is also possible to supply argon gas from the slinging officer. Therefore, it is possible to provide a manufacturing device with high reliability and a manufacturing method for a highly reliable material device. The embodiment is as follows. When the film formation process is performed on a single substrate S, the net processing may be performed. In addition to the fluorine gas may be used stone hexafluoride Tokyo State 6), nitrogen trifluoride iv) gas trifluoride gas (C1F3), as a clean gas. • In addition to argon, nitrogen (N2) gas or helium (He) gas may be used as the inert gas supplied to the vacuum chamber 21_inert gas and the clean gas at the same time as the exhaust gas treatment. • For the film formation process, the monooxane gas supply process, and the exhaust gas treatment, use 22 201117296 to maintain various piping and film forming chambers, and maintain the temperature at 6叱 or more and 5〇. 〇 The following can be. Soil's temperature inert gas =:: Timing: However, it has been supplied with piping from the tungsten hexafluoride gas, and it is supplied with a single Wei gas π pipe, but even if it is only from six gas two : Gas supply for the gas for the erotic gas _, also (5) = _ inertia of the pipe • Although the fluorinated thief body is connected with the hexafluoride turnover pipe, the thief body is connected with the squid (4) city _ piping. Even in this case, the effects of (1) to (5) can be obtained. The condition of the single Wei gas supply may also be ν _ two domains = the film thickness of the film is thicker than the film thickness of the Ρ type impurity diffusion region: y, that is, even the material of the single Wei gas _ The entire diffusion region can also suppress the erosion of defects in the impurity diffusion region. In the case of a semiconductor device, there are two groups of loading/unloading ports 11a and 11b, pre-processing chambers 12a and 12b, and film forming chambers, 13b', but each of them can be carried in. (4) The mouth, the pre-treatment chamber, and the film-forming chamber. Further, the number of various chambers and moving/moving outlets can be arbitrarily set. In addition to the film forming chamber, the manufacturing device of the semiconductor device has a pre-processing chamber, a reducing chamber, and a turning chamber. However, it may have only a loading/unloading port and a thin chamber t, or may be fine. More than moving/moving. Even in this case, the effects of (1) to (7) can be obtained. The manufacturing method of the germanium semiconductor device can also be carried out in the step before the formation of the contact hole, that is, the step of directly forming the crane film on the impurity diffusion layer in 23 201117296 after the formation of the impurity diffusion layer of the transistor. Although it is the side of the present invention, it is preferred to implement the invention in the form of a plurality of forms, structures, arrangements, proportions, materials, elements, and stipulations. It should be considered to be used to say this (4). The gamma of this (4) is subject to the stipulations of the attached application and covers its legal equivalents and is not limited to the previous description. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a partial cross-sectional view showing a film forming chamber of the manufacturing apparatus of the first embodiment of the present invention. FIG. 3 is a view showing the timing of supplying gas to the film forming chamber. Timing diagram; and _2 __ supply, (four) body (four) sequence diagram, and the timing diagram of the partial pressure of the film cavity to the inside. 13a film forming chamber 13b film forming chamber 14 heat treatment chamber 15 transfer chamber [main component symbol description] lla loading/unloading port lib loading/unloading port 12a pre-processing chamber 12b pre-processing chamber 24 201117296 21 vacuum chamber 22 Substrate holder 23 shower head 24 frequency power supply 2 5 adjustment rim MFC1 flow control unit MFC2 flow control unit MFC3 flow control unit MFC4 flow control unit MFC5 flow control unit P1 material gas 埠 P2 clean gas 埠 P3 exhaust 埠 S yarn substrate 25