201117284 六、發明說明 【發明所屬之技術領域】 本發明是有關平板顯7^器（FPD; Flat Panel Display) 製造用的玻璃基板、或對半導體積體電路（I C)製造用的半 導體晶圓等的被處理體實施電漿處理的電漿處理裝置。 【先前技術】 在FPD或1C的製造工程中，有使用對玻璃基板或半 導體晶圓等的被處理體實施蝕刻等處理的電漿處理裝置。 就實施蝕刻等的處理的電漿處理裝置而言，例如有電漿乾 鈾刻裝置爲人所知。 在電漿乾鈾刻裝置連接有控制製程氣體或高頻輸出的 裝置控制器。裝置控制器是按照被稱爲製程處方（recipe) 的預定處理條件來控制製程氣體的流量或高頻輸出、處理 時間及處理壓力等。藉此，利用電漿處理裝置實行對被處 理體的鈾刻等預定的處理。 當在實行預定的處理時發生製程異常等時，例如專利 文獻1所記載般，中斷對被處理體的處理。中斷後，操作 者進行處方的修正等的必要操作後，再實行對被處理體的 處理》 [先行技術文獻]' [專利文獻] [專利文獻1]特開2007-234809號公報 201117284 【發明內容】 (發明所欲解決的課題） 如專利文獻1記載般，在實行預定的處理時，當發生 製程異常等時中斷處理。因此，會有製品的生產性降低的 情事。 本發明是有鑑於上述情事而硏發者，其目的是在於提 供一種即使發生製程異常等時還是可以抑制生產性的降低 之電漿處理裝置。 (用以解決課題的手段） 爲了解決上述課題，本發明之一態樣的電漿處理裝 置，係具備：對被處理體，按照處理條件來進行電漿處理 的處理室之電漿處理裝置，其特徵係具備控制系，該控制 系係具備：記憶與上述處理條件相異的複數的再處理條件 之記憶部、及監視上述電漿處理中的異常發生的有無之監 視機能、及判定所發生之異常的種類之判定機能，在上述 電漿處理中發生異常時，按照判定之異常的種類，從上述 複數的再處理條件之中選擇一個的再處理條件，對上述被 處理體進行再處理。 [發明的效果] 若根據本發明，則可提供一種即使在製程異常等發生 時也可抑制生產性的降低之電漿處理裝置。 -6 - 201117284 【實施方式】 以下，參照圖面來說明有關本發明的實施形態。 圖1是槪略表示本發明之一實施形態的電漿處理裝置 之一例的剖面圖。 圖1所示的電漿處理裝置1是對FPD製造用的玻璃 基板G進行預定處理的裝置之一例，本例是構成爲電容 耦合型電漿乾蝕刻裝置。FPD是例如有液晶顯示器 (LCD)、電致發光（Electro Luminescence; EL)顯示器、電 漿顯示器面板（PDP)等。 電漿處理裝置1是具有處理室（電漿處理室）2，其表 面例如被防蝕鋁處理（alumite)(陽極氧化處理），由鋁所構 成，形成方筒形狀。在處理室2內的底部配置有用以載置 被處理體的玻璃基板G的載置台3。 載置台3是隔著絕緣構件4被處理室2的底部所支 撐。載置台3是藉由具有凸部5a的導電性的基材5所構 成。導電性的基材5的表面是以絕緣性的表面塗層8、例 如氧化鋁熱噴塗或防蝕鋁所覆蓋。凸部5a的周圍是藉由 框緣狀的聚焦環6所包圍。本例是在導電性的基材5連接 有給電線1 2。給電線1 2是經由整合器1 3來連接至高頻 電源14。高頻電源14是例如輸出13.56MHz的高頻電 力。高頻電力是經由整合器13及給電線12來供給至構成 載置台3的導電性的基材5。藉此，載置台3是具有作爲 下部電極的機能。 在載置台3的上方，與載置台3對向而配置有淋浴頭 201117284 2〇。淋浴頭20是例如被處理室2的上部所支持。淋浴頭 20是在內部具有內部空間21，且在與載置台3的對向面 具有吐出處理氣體的複數個吐出孔22。藉此，淋浴頭20 是具有作爲處理氣體吐出部的機能。就本例而言，淋浴頭 20是被接地而具有作爲上部電極的機能，與具有作爲下 部電極的機能之載置台3構成一對的平行平板電極。 在淋浴頭20的上面設有氣體導入口 24。在氣體導入 口 24連接處理氣體供給管25。處理氣體供給管25是經 由開閉閥26及質量流控制器（MFC) 27來連接至處理氣體 供給源2 8。處理氣體供給源2 8是將使用於電漿處理例如 電漿乾蝕刻的處理氣體經由質量流控制器27、開閉閥 26、處理氣體供給管25及淋浴頭20來供給至處理室2 內。處理氣體可使用鹵素系的氣體、02氣體、Ar氣體等 通常被使用於此領域的氣體。 在處理室2的底部形成有排氣管29。排氣管29是被 連接至排氣裝置30。排氣裝置30是具備渦輪分子泵（TMP) 等的真空泵。排氣裝置30是調節排氣量來將處理室2內 予以排氣。藉此，處理室2內的壓力可減壓至預定的減壓 環境。 在處理室2的側壁設有基板搬出入口 31。基板搬出 入口 3 1可藉由閘閥3 2來開閉。在使閘閥3 2形成開啓的 狀態下，藉由搬送裝置（未圖示）來搬出入玻璃基板G。 圖2是槪略性表示控制圖1所示的電漿處理裝置1的 控制系的方塊圖。 -8 - 201117284 如圖2所示，裝置控制器50是被連接至整合器13、 質量流控制器27、排氣裝置30、根據處理室2內的電漿 發光強度來檢測出蝕刻終點的終點檢出器5 1、及使高頻 輸出產生於高頻電源14的高頻產生裝置52。 在控制器50具有記憶處理條件（製程處方）的記憶 部’裝置控制器50是控制質量流控制器27，按照被記憶 於記憶部的處理條件（製程處方）來調節處理氣體的流量。 同樣，裝置控制器50是控制排氣裝置30，按照製程 處方來調節排氣量，調節處理室2內的壓力。 又’裝置控制器50是控制高頻產生裝置52，按照製 程處方來調節供給至載置台3的高頻電力的輸出値。 又’裝置控制器5 0是控制流動於載置台3中所被裝 入的傳熱媒體流路的傳熱媒體的溫度調節裝置（未特別圖 示）’按照製程處方來調節玻璃基板G的溫度。 如此，裝置控制器50是在控制質量流控制器27、排 氣裝置30、高頻產生裝置52及溫度調節裝置之下控制電 漿處理裝置1。 又’裝置控制器50不僅具有控制電漿處理裝置i的 ^ @ ’還具有監視處理狀況的監視機能。 具體而言，裝置控制器50是監視質量流控制器27的 處理氣體的流量，監視處理氣體的供給狀況。 同樣，裝置控制器50是監視排氣裝置30的排氣量， 監視處理室2內的壓力狀況。 同樣’裝置控制器50是監視高頻產生裝置52的輸出 201117284 値，監視高頻輸出的輸出狀況。 同樣，裝置控制器50是監視溫度調節裝置，監視玻 璃基板G的溫度或處理室2內的溫度狀況。 同樣，裝置控制器50是監視終點檢出器5 1所檢測出 的電漿發光強度，監視處理室2內的電漿狀態。又，裝置 控制器50是監視回到高頻產生裝置52的高頻電力的反射 波的大小（以下簡稱反射波），監視處理室2內的電漿狀 態》 又，裝置控制器50是在對玻璃基板G實施處理時， 當發生異常，例如製程異常時，選擇預先被記憶於記憶部 的再處理條件，設定必要的値，以能夠對此玻璃基板G 實施再處理的方式，控制電漿處理裝置1。圖3是表示裝 置控制器50所實行的基板處理方法之一例。 如圖3所示，裝置控制器50是記憶基本處理條件。 基本處理條件是藉由處理條件（製程處方）的基本條件及用 以判斷有無製程異常發生的規定値所構成。在基本條件設 定有處理氣體的流量、處理氣體的種類、處理室2內的壓 力、高頻電力的輸出値、及處理時間等。規定値是針對從 各單元（整合器13、質量流控制器27、排氣裝置30、終 點檢出器51、高頻產生裝置52、溫度調節裝置（未圖示）） 取得的電漿發光強度、高頻電力的輸出値、反射波、基板 或處理室2內的溫度來設定。 規定値的一例是以在正常處理終了後的玻璃基板G 中所被觀察的電漿發光強度、高頻電力的輸出値、反射 -10- 201117284 波、基板或處理室2內的溫度作爲規定値。裝置控制器 50是對玻璃基板G實施處理時，監視電漿發光強度、高 頻電力的輸出値、反射波、基板或處理室2內的溫度，當 發生該等値的至少一個脫離上述規定値的變化時，判斷發 生異常。裝置控制器50亦具有判定異常的種類之判定機 能。異常的種類的判定是例如只要判定電漿發光強度、高 頻電力的輸出値、反射波、基板或處理室2內的溫度的其 中哪個的規定値脫離即可。 例如，事先在裝置控制器50的記憶部記億判定-1〜 判定-η的η個判定結果，藉由檢索脫離規定値的變化是 與η個的判定中哪個的判定結果吻合來判定異常的種類。 又，本例是在裝置控制器50的記億部中記憶有分別 對應於η個的判定結果之複數的再處理條件。再處理條件 相對於處理條件（基本條件），是處理氣體的流量、處理氣 體的種類、處理室2內的壓力（處理室2內的排氣量）、高 頻電力的輸出値的至少其中任一個相異。 例如圖4Α所示，處理時間爲1 l〇sec時，反射波轉瞬 間上昇。若將此時的判定設爲"判定-1 "，貝！J "條件-1 "會被 選擇作爲再處理條件。又，如圖4B所示，處理時間爲 140sec時，電漿發光急劇減少。若將此時的判定設爲"判 定-2"，則"條件-2"會被選擇作爲再處理條件。 裝置控制器50會將基本條件，例如處理氣體的流 量、處理室2內的壓力、高頻電力的輸出値及處理時間變 更成按照判定結果所選擇的再處理條件。而且，裝置控制 -11 - 201117284 器會根據選擇的再處理條件來對玻璃基板G實行再處 理。 如此，若根據一實施形態的電漿處理裝置，則裝置控 制器5 0會按照玻璃基板G的處理狀況或裝置的狀態來自 動地選擇且實行適當的再處理條件。藉此，可取得一種即 使在發生製程異常等時照樣可抑制生產性的降低之電漿處 理裝置。 其次，在以下說明具體的基板處理的順序之一例。 圖5是表示一實施形態的電漿處理裝置所進行的基板 處理的順序之一例的流程圖。 如圖5所示，在實行處理時，發生某些的異常（步驟 1)。 判斷在步驟1中所發生的異常爲重度的異常或輕度的 異常。 重度的異常是例如包含無法搬送玻璃基板G、電極破 損、高頻電源破損等機器的故障，爲處理的續行不可能的 異常（嚴重警報；killer alarm)。當發出嚴重警報時中止 處理。 輕度的異常是反射波瞬間增大、規定外的高頻的輸出 變動、規定外的壓力變動、規定外的處理氣體的流量變 動、及規定外的溫度變動（處理室內及/或玻璃基板等）等’ 有希望續行處理的異常（通常警報）。當通常警報發生時’ 前進至異常診斷步驟（步驟2)。 在步驟2中判定異常的種類，判斷判定的結果’處理 12- 201117284 的續行爲可能或不可能。 異常的種類是例如根據發生異常的時機及檢測出異常 的單元的資訊來判定。例如，在裝置控制器50的記憶部 中使最近正常被處理的玻璃基板G的製程資訊記錄。例 如，對於裝置控制器50，若爲A品種則使用B處方來處 理時，在C時間經過後成爲電漿的發光強度D，更在E時 間經過後成爲發光強度F，在G時間終了處理等那樣，使 取樣每處理經過時間的製程資訊。在每處理經過時間取樣 的製程資訊是包含玻璃基板G被正常處理時，例如處理 室內或玻璃基板G的溫度、高頻電力的輸出値、電漿發 光的強度、及反射波的大小在每處理經過時間如何變化的 資訊。例如，將如此每處理經過時間的製程資訊設爲判定 的規定値，判定處理的進展度、及再處理的可否。 當判斷處理的續行不可能時，中止處理（不可再處 理）。 當判斷處理的續行可能時（可再處理），前進至再處理 條件設定步驟（步驟3)。 在步驟3中，對被檢測出製程的異常之玻璃基板G 設定再處理條件。 再處理條件的設定是按照所被判定之異常的種類，從 預先被記億的複數的再處理條件之中選擇最適的再處理條 件，藉此進行。例如，瞬間反射波過大等，電漿狀態的不 安定成爲異常的要因時，選擇只使高頻輸出降低的再處理 條件。 -13- 201117284 並且’算出異常檢出前玻璃基板G所被正常處理的 時間’考量上述高頻輸出的變更來設定必要的再處理時 間。未使用終點檢出時’或無法終點檢出時，根據此被設 定的再處理時間終了處理。 根據圖6A及圖6B來說明具體的再處理條件的設定 例。 圖6A是表示在高頻輸出10 kW的基本條件下所被正 常處理的玻璃基板G的每處理經過時間的製程資訊，顯 示按照電漿發光強度及反射波的處理經過時間的變動波 形。 如圖6A所示，正常被處理的玻璃基板G是首先總計 的處理時間爲llOsec。每處理經過時間的電漿發光強度及 反射波的變動是以下所示般。 處理經過時間60 sec :電漿發光強度降低，反射波増 大 處理經過時間8 0 s e c :電漿發光強度再度降低 處理經過時間100sec :電漿發光強度爲下限（恰當蝕 刻（just etch)) 處理經過時間1 1 〇sec :處理終了 圖6B是表示在高頻輸出10 kW的基本條件下發生異 常的玻璃基& G的每處理經過時間的製程資訊。圖6B所 示的例子是在處理經過時間爲58sec時，瞬間反射波過 大。在此，圖6B是顯示至異常發生爲止的製程資訊。在 本例中，裝置控制器50是判斷處理的續行可能，將再處 -14- 201117284 理條件設定成下述般。 由於異常的種類爲「瞬間反射波過大」，所以裝置控 制器50會由預先被記憶於記憶部的複數的再處理條件中 選擇從基本條件只使高頻輸出降低至5kW的再處理條 件。 並且’防備於無法終點檢出時，也會設定再處理時 間。有關再處理時間，是爲了使高頻輸出降低至5kW，而 設定成104sec’亦即從被正常處理時的總計的處理時間 (llOsec)減去異常檢出前玻璃基板〇被正常處理的時間 (58sec)後的時間的2倍。 在如此設定再處理條件後，前進至步驟4，實行再處 理（追加處理）。然後，如步驟5所示，若蝕刻的終點被檢 測出，則終了處理（可終了），當終點未被檢測出時，如步 驟6所示，根據所設定的再處理時間的時間控制（不可終 了），終了處理。 以上’說明具體的順序之一例，但因爲再處理條件的 實行是藉由裝置控制器50來全部自動進行，所以從異常 檢出到再處理條件的實行開始爲止的時間是，極短。因此， 在異常檢出的時間點，裝置控制器50可控制高頻產生裝 置52，使高頻輸出一旦停止，或不使停止。或者，亦可 如圖7所示，從異常檢出到再處理條件的實行開始的期 間，以使高頻輸出能夠下降至維持電漿所必要的最低限度 的輸出之方式控制高頻產生裝置52，將此期間設爲蝕刻 等的處理不會進展的微弱放電狀態。 -15- 201117284 藉由具備如此的裝置控制器50作爲控制系，可取得 一種即使在發生製程異常等時照樣可抑制生產性的降低之 電漿處理裝置。 以上，根據一實施形態來說明本發明，但本發明並非 限於上述一實施形態，亦可爲各種的變形。例如，將再處 理條件設爲「使基本條件的高頻輸出値降低成50%」，以 基本條件的値作爲基礎的條件。若爲如此的條件，則即使 基本條件改變還是可使高頻輸出降低。 又，本發明的實施形態並非上述一實施形態爲唯一 者。 例如，上述一實施形態是顯示有關將本發明適用於 FPD製造用的玻璃基板的電漿乾蝕刻處理時，但並非限於 此，對於處理太陽電池用基板或半導體晶圓等其他的被處 理體的裝置也可適用。 又，處理雖是顯示電漿乾蝕刻處理，但並非限於電漿 乾蝕刻處理，亦可適用於CVD、PVD等的成膜處理。 又，上述一實施形態是顯示將高頻電源14連接至載 置台3的電容耦合型電漿裝置，但例如亦可爲將有別於高 頻電源14的頻率的高頻電源連接至載置台3的電容耦合 型電漿裝置，或對於感應耦合型的電漿裝置或利用微波的 電漿裝置也可適用本發明。 【圖式簡單說明】 圖1是槪略表示本發明之一實施形態的電漿處理裝置 -16- 201117284 之一例的剖面圖。 圖2是槪略表示控制圖1所示的電漿處理裝置1的控 制系的方塊圖。 圖3是表示一實施形態的電漿處理裝置所具備的裝置 控制器所實行的基板處理方法之一例的流程圖。 圖4是表示處理條件變更的例圖。 圖5是表示一實施形態的電漿處理裝置所進行的基板 處理的順序之一例的流程圖。 圖6A是表示正常被處理之玻璃基板G的每處理經過 時間的製程資訊，圖6B是表示發生異常之玻璃基板0的 每處理經過時間的製程資訊。 圖7是表示放電位準與時間的關係。 【主要元件符號說明】 2 :處理室（處理室） 5 :基材（下部電極） 5a :凸部 5b :凸緣部 6 :聚焦環 13 :整合器 1 4 :高頻電源 27 :質量流控制器 3 0 :排氣裝置 5 0 :裝置控制器 -17- 201117284 5 1 :終點檢出器 42 :高頻產生裝置[Technical Field] The present invention relates to a glass substrate for manufacturing a flat panel display (FPD) or a semiconductor wafer for manufacturing a semiconductor integrated circuit (IC). The treated object is subjected to a plasma treatment plasma treatment device. [Prior Art] In the manufacturing process of FPD or 1C, a plasma processing apparatus that performs etching or the like on a substrate to be processed such as a glass substrate or a semiconductor wafer is used. For a plasma processing apparatus that performs a treatment such as etching, for example, a plasma dry uranium engraving apparatus is known. A device controller for controlling process gas or high frequency output is connected to the plasma dry uranium engraving device. The device controller controls the flow rate or high frequency output of the process gas, processing time, and processing pressure in accordance with predetermined processing conditions called recipe recipes. Thereby, a predetermined process such as uranium engraving of the object to be treated is carried out by the plasma processing apparatus. When a process abnormality or the like occurs when a predetermined process is performed, for example, as described in Patent Document 1, the processing of the object to be processed is interrupted. After the interruption, the operator performs the necessary operations such as the correction of the prescription, and then the processing of the object to be processed is performed. [Provisional Technical Documents] [Patent Document] [Patent Document 1] JP-A-2007-234809 (201117284) (Problem to be Solved by the Invention) As described in Patent Document 1, when a predetermined process is performed, the process is interrupted when a process abnormality or the like occurs. Therefore, there is a case where the productivity of the product is lowered. The present invention has been made in view of the above circumstances, and an object thereof is to provide a plasma processing apparatus capable of suppressing a decrease in productivity even when a process abnormality or the like occurs. (Means for Solving the Problem) In order to solve the above-described problems, a plasma processing apparatus according to an aspect of the present invention includes a plasma processing apparatus for a processing chamber that performs plasma processing on a workpiece to be processed according to processing conditions. The control system includes a control unit that stores a memory unit that stores a plurality of reprocessing conditions that are different from the processing conditions, and a monitoring function that monitors the presence or absence of an abnormality in the plasma processing, and determines that the occurrence occurs. When an abnormality occurs in the plasma processing, the reprocessing condition is selected from the plurality of reprocessing conditions in accordance with the type of the abnormality determined, and the object to be processed is reprocessed. [Effects of the Invention] According to the present invention, it is possible to provide a plasma processing apparatus capable of suppressing a decrease in productivity even when a process abnormality or the like occurs. -6 - 201117284 [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a cross-sectional view showing an example of a plasma processing apparatus according to an embodiment of the present invention. The plasma processing apparatus 1 shown in Fig. 1 is an example of a device for performing predetermined processing on a glass substrate G for FPD manufacturing. This example is a capacitive coupling type plasma dry etching apparatus. The FPD is, for example, a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), or the like. The plasma processing apparatus 1 has a processing chamber (plasma processing chamber) 2 whose surface is, for example, alumite (anodized), and is made of aluminum to form a square tube shape. A mounting table 3 for mounting the glass substrate G of the object to be processed is disposed at the bottom of the processing chamber 2. The mounting table 3 is supported by the bottom of the processing chamber 2 via the insulating member 4. The mounting table 3 is formed of a conductive substrate 5 having a convex portion 5a. The surface of the electrically conductive substrate 5 is covered with an insulating surface coating 8, such as alumina thermal spray or alumite. The periphery of the convex portion 5a is surrounded by a bezel-shaped focus ring 6. In this example, the conductive wire 12 is connected to the conductive substrate 5. The feed line 12 is connected to the high frequency power source 14 via the integrator 13. The high frequency power source 14 is, for example, a high frequency power output of 13.56 MHz. The high-frequency power is supplied to the conductive substrate 5 constituting the mounting table 3 via the integrator 13 and the power supply line 12. Thereby, the mounting table 3 has a function as a lower electrode. Above the mounting table 3, a shower head 201117284 2〇 is disposed opposite to the mounting table 3. The shower head 20 is supported, for example, by the upper portion of the processing chamber 2. The shower head 20 has an internal space 21 therein, and has a plurality of discharge holes 22 for discharging a processing gas on the opposing surface of the mounting table 3. Thereby, the shower head 20 has a function as a processing gas discharge portion. In this example, the shower head 20 is a parallel plate electrode which is grounded and has a function as an upper electrode and a pair of mounting stages 3 having a function as a lower electrode. A gas introduction port 24 is provided on the upper surface of the shower head 20. The processing gas supply pipe 25 is connected to the gas inlet port 24. The process gas supply pipe 25 is connected to the process gas supply source 28 via an on-off valve 26 and a mass flow controller (MFC) 27. The processing gas supply source 28 supplies the processing gas used for plasma processing such as plasma dry etching to the processing chamber 2 via the mass flow controller 27, the opening and closing valve 26, the processing gas supply pipe 25, and the shower head 20. As the processing gas, a halogen-based gas, an 02 gas, an Ar gas, or the like which is generally used in the field can be used. An exhaust pipe 29 is formed at the bottom of the process chamber 2. The exhaust pipe 29 is connected to the exhaust device 30. The exhaust device 30 is a vacuum pump including a turbo molecular pump (TMP) or the like. The exhaust unit 30 regulates the amount of exhaust gas to exhaust the inside of the processing chamber 2. Thereby, the pressure in the processing chamber 2 can be depressurized to a predetermined reduced pressure environment. A substrate carry-out port 31 is provided on the side wall of the processing chamber 2. The substrate carry-out port 3 1 can be opened and closed by the gate valve 32. When the gate valve 3 2 is opened, the glass substrate G is carried out by a transfer device (not shown). Fig. 2 is a block diagram schematically showing the control system of the plasma processing apparatus 1 shown in Fig. 1. -8 - 201117284 As shown in FIG. 2, the device controller 50 is connected to the integrator 13, the mass flow controller 27, and the exhaust device 30, and detects the end point of the etching end point based on the plasma luminous intensity in the processing chamber 2. The detector 5 1 and the high frequency generating device 52 that generates the high frequency output from the high frequency power source 14 are provided. The memory unit having the memory processing condition (process recipe) is controlled by the controller 50. The device controller 50 controls the mass flow controller 27 to adjust the flow rate of the processing gas in accordance with the processing conditions (process recipe) stored in the memory unit. Similarly, the device controller 50 controls the exhaust device 30 to adjust the amount of exhaust gas in accordance with the process recipe to adjust the pressure in the process chamber 2. Further, the device controller 50 controls the high frequency generating device 52 to adjust the output 値 of the high frequency power supplied to the mounting table 3 in accordance with the recipe. Further, the device controller 50 is a temperature adjustment device (not shown) that controls the heat transfer medium flowing through the heat transfer medium flow path mounted in the mounting table 3, and adjusts the temperature of the glass substrate G in accordance with the process recipe. . Thus, the device controller 50 controls the plasma processing device 1 under the control mass flow controller 27, the exhaust device 30, the high frequency generating device 52, and the temperature regulating device. Further, the device controller 50 has not only the control of the plasma processing device i but also the monitoring function for monitoring the processing status. Specifically, the device controller 50 monitors the flow rate of the process gas of the mass flow controller 27 and monitors the supply state of the process gas. Similarly, the device controller 50 monitors the amount of exhaust of the exhaust device 30 and monitors the pressure condition in the processing chamber 2. Similarly, the device controller 50 monitors the output of the high frequency generating device 52, 201117284, and monitors the output of the high frequency output. Similarly, the device controller 50 monitors the temperature adjustment device to monitor the temperature of the glass substrate G or the temperature condition in the processing chamber 2. Similarly, the device controller 50 monitors the plasma luminous intensity detected by the end point detector 51, and monitors the state of the plasma in the processing chamber 2. Further, the device controller 50 monitors the magnitude of the reflected wave of the high-frequency power returned to the high-frequency generating device 52 (hereinafter referred to as a reflected wave), and monitors the state of the plasma in the processing chamber 2, and the device controller 50 is in the pair. When the glass substrate G is subjected to processing, when an abnormality occurs, for example, a process abnormality, the reprocessing conditions previously stored in the memory unit are selected, and necessary enthalpy is set, so that the glass substrate G can be reprocessed to control the plasma processing. Device 1. Fig. 3 is a view showing an example of a substrate processing method executed by the device controller 50. As shown in FIG. 3, the device controller 50 is a memory basic processing condition. The basic processing conditions are composed of the basic conditions of the processing conditions (process recipe) and the regulations for determining whether or not a process abnormality has occurred. The flow rate of the processing gas, the type of the processing gas, the pressure in the processing chamber 2, the output of the high-frequency power, and the processing time are set under basic conditions. The predetermined 値 is the plasma luminous intensity obtained from each unit (the integrator 13, the mass flow controller 27, the exhaust device 30, the end point detector 51, the high frequency generating device 52, and the temperature adjusting device (not shown)) The output of the high-frequency power, the reflected wave, and the temperature in the substrate or the processing chamber 2 are set. An example of the predetermined enthalpy is the plasma luminescence intensity observed in the glass substrate G after the normal treatment, the output 値 of the high-frequency power, the reflection -10- 201117284 wave, the temperature in the substrate or the processing chamber 2 as a predetermined value. . When the glass substrate G is processed, the device controller 50 monitors the plasma luminous intensity, the output enthalpy of the high-frequency power, the reflected wave, and the temperature in the substrate or the processing chamber 2, and at least one of the defects occurs when the predetermined condition is removed. When the change occurs, it is judged that an abnormality has occurred. The device controller 50 also has a function of determining the type of abnormality. The determination of the type of the abnormality is, for example, a determination of which of the plasma emission intensity, the output 値 of the high-frequency power, the reflected wave, and the temperature in the substrate or the processing chamber 2 is deviated. For example, in the memory unit of the device controller 50, in advance, the result of the determination of n is determined to be abnormal, and the result of the determination of the deviation from the predetermined determination is determined by the result of the determination of which of the n determinations. kind. Further, in this example, in the unit of the device controller 50, the reprocessing conditions corresponding to the plural of the n determination results are stored. The reprocessing conditions are at least one of the flow rate of the processing gas, the type of the processing gas, the pressure in the processing chamber 2 (the amount of exhaust gas in the processing chamber 2), and the output of the high-frequency power with respect to the processing conditions (basic conditions). One is different. For example, as shown in Fig. 4Α, when the processing time is 1 l〇sec, the reflected wave rises instantaneously. If the judgment at this time is set to "judgment-1 ", Bay! J "Condition-1 " will be selected as a reprocessing condition. Further, as shown in Fig. 4B, when the processing time was 140 sec, the plasma light emission was drastically reduced. If the judgment at this time is set to "determination-2", then "condition-2" will be selected as the reprocessing condition. The device controller 50 changes basic conditions such as the flow rate of the processing gas, the pressure in the processing chamber 2, the output of the high-frequency power, and the processing time to reprocessing conditions selected in accordance with the determination result. Moreover, the device control -11 - 201117284 will reprocess the glass substrate G according to the selected reprocessing conditions. As described above, according to the plasma processing apparatus of the embodiment, the device controller 50 automatically selects and executes appropriate reprocessing conditions in accordance with the processing state of the glass substrate G or the state of the device. As a result, it is possible to obtain a plasma processing apparatus which can suppress the decrease in productivity even when a process abnormality or the like occurs. Next, an example of the order of specific substrate processing will be described below. Fig. 5 is a flow chart showing an example of a procedure of substrate processing performed by the plasma processing apparatus according to the embodiment. As shown in Figure 5, certain exceptions occur during the processing (step 1). It is judged that the abnormality occurring in the step 1 is a severe abnormality or a slight abnormality. The severe abnormality is, for example, a failure of a machine that cannot convey the glass substrate G, the electrode is broken, or the high-frequency power supply is broken, and is an abnormality (severe alarm) that is impossible for the continuation of the process. Discontinue processing when a critical alarm is issued. A slight abnormality is an instantaneous increase in the reflected wave, a change in the output of the high-frequency outside the predetermined period, a change in the pressure outside the predetermined range, a change in the flow rate of the predetermined processing gas, and a predetermined temperature fluctuation (in the processing chamber and/or the glass substrate, etc.) ) Wait for an exception (usually an alert) that is expected to continue processing. When the normal alarm occurs, proceed to the abnormality diagnosis step (step 2). It is possible or impossible to determine the type of the abnormality in step 2 and judge the result of the determination 'processing 12-201117284. The type of the abnormality is determined, for example, based on the timing of the occurrence of the abnormality and the information of the unit that detected the abnormality. For example, the process information of the most recently processed glass substrate G is recorded in the memory portion of the device controller 50. For example, when the device controller 50 is processed using the B prescription, the device controller 50 becomes the luminous intensity D of the plasma after the lapse of the C time, and becomes the luminous intensity F after the lapse of the E time, and the processing at the end of the G time. That way, the process information of the elapsed time per sample is sampled. The process information sampled during each processing elapsed time is included when the glass substrate G is normally processed, for example, the temperature of the processing chamber or the glass substrate G, the output of the high-frequency power, the intensity of the plasma light emission, and the magnitude of the reflected wave in each processing. Information on how time has changed. For example, the process information such as the elapsed time per process is set as the predetermined specification, and the progress degree of the process and the possibility of reprocessing are determined. When it is judged that the continuation of the processing is impossible, the processing is aborted (cannot be processed). When it is judged that the continuation of the processing is possible (reprocessable), the processing proceeds to the reprocessing condition setting step (step 3). In step 3, reprocessing conditions are set for the glass substrate G on which the abnormality of the process is detected. The setting of the reprocessing condition is performed by selecting an optimum reprocessing condition from among a plurality of reprocessing conditions that have been counted in advance in accordance with the type of the abnormality to be determined. For example, when the instantaneous reflected wave is too large, and the instability of the plasma state becomes an abnormal factor, a reprocessing condition that reduces only the high-frequency output is selected. -13- 201117284 And 'calculating the time during which the glass substrate G is normally processed before the abnormality is detected', the change of the high-frequency output is taken into consideration, and the necessary reprocessing time is set. When the end point is not detected or the end point is not detected, the reprocessing time set according to this is processed. An example of setting a specific reprocessing condition will be described with reference to Figs. 6A and 6B. Fig. 6A is a process information showing the elapsed time per process of the glass substrate G which is normally processed under the basic condition of a high-frequency output of 10 kW, and shows a fluctuation waveform in accordance with the plasma emission intensity and the elapsed time of the reflected wave. As shown in Fig. 6A, the glass substrate G which is normally processed is the first total processing time of 11 sec. The variation of the plasma luminous intensity and the reflected wave per treatment time is as follows. The processing time is 60 sec: the plasma luminous intensity is reduced, the reflected wave is increased, and the elapsed time is 80 sec: the plasma luminous intensity is decreased again. The elapsed time is 100 sec: the plasma luminous intensity is the lower limit (just etch). 1 1 〇 sec : Processing end Fig. 6B is process information showing the elapsed time per treatment of the glass base & G which is abnormal under the basic condition of high-frequency output of 10 kW. The example shown in Fig. 6B is that the instantaneous reflected wave is excessive when the processing elapsed time is 58 sec. Here, FIG. 6B shows process information until an abnormality occurs. In this example, the device controller 50 determines the continuation of the processing, and sets the condition to be -14-201117284 as follows. Since the type of abnormality is "the instantaneous reflected wave is too large", the device controller 50 selects a reprocessing condition that reduces the high frequency output only to 5 kW from the basic condition from the plurality of reprocessing conditions previously memorized in the memory portion. And when it is prepared to prevent the end point from being detected, the reprocessing time will also be set. The reprocessing time is to reduce the high-frequency output to 5 kW and set to 104 sec', that is, the total processing time (llOsec) at the time of normal processing minus the time during which the glass substrate 〇 is normally processed before the abnormality detection ( 2 times after 58 sec). After the reprocessing conditions are set as described above, the process proceeds to step 4, and reprocessing (addition processing) is performed. Then, as shown in step 5, if the end point of the etching is detected, the processing is terminated (endurable), and when the end point is not detected, as shown in step 6, the time control according to the set reprocessing time is not possible (not End), the end of the process. The above is an example of a specific procedure. However, since the reprocessing conditions are all automatically performed by the device controller 50, the time from the detection of the abnormality to the start of the execution of the reprocessing condition is extremely short. Therefore, at the time of abnormality detection, the device controller 50 can control the high frequency generating means 52 to stop the high frequency output or stop it. Alternatively, as shown in FIG. 7, the high frequency generating means 52 may be controlled so that the high frequency output can be lowered to the minimum output necessary for maintaining the plasma from the time when the abnormality detection to the execution of the reprocessing condition is started. This period is a weak discharge state in which the processing such as etching does not progress. -15-201117284 By providing such a device controller 50 as a control system, it is possible to obtain a plasma processing apparatus which can suppress the decrease in productivity even when a process abnormality or the like occurs. The present invention has been described above on the basis of an embodiment, but the present invention is not limited to the above embodiment, and various modifications are possible. For example, the reprocessing condition is set to "lower the high-frequency output 基本 of the basic condition to 50%", and the condition based on the basic condition is 。. If it is such a condition, the high frequency output can be lowered even if the basic conditions are changed. Further, the embodiment of the present invention is not the only one of the above embodiments. For example, in the above-described embodiment, the present invention is applied to a plasma dry etching process in which a glass substrate for FPD manufacturing is applied. However, the present invention is not limited thereto, and is used for processing other substrates to be processed such as a solar cell substrate or a semiconductor wafer. The device is also applicable. Further, although the treatment is a plasma dry etching treatment, it is not limited to the plasma dry etching treatment, and may be applied to a film formation treatment such as CVD or PVD. Further, the above-described embodiment is a capacitive coupling type plasma device that connects the high-frequency power source 14 to the mounting table 3. However, for example, a high-frequency power source having a frequency different from the high-frequency power source 14 may be connected to the mounting table 3. The present invention can also be applied to a capacitively coupled plasma device, or to an inductively coupled plasma device or a plasma device utilizing microwaves. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an example of a plasma processing apparatus -16 to 201117284 according to an embodiment of the present invention. Fig. 2 is a block diagram schematically showing the control system for controlling the plasma processing apparatus 1 shown in Fig. 1. Fig. 3 is a flow chart showing an example of a substrate processing method executed by the device controller included in the plasma processing apparatus according to the embodiment. 4 is a view showing an example of a change in processing conditions. Fig. 5 is a flow chart showing an example of a procedure of substrate processing performed by the plasma processing apparatus according to the embodiment. Fig. 6A is process information showing the elapsed time per process of the glass substrate G which is normally processed, and Fig. 6B is process information showing the elapsed time per process of the glass substrate 0 in which abnormality has occurred. Figure 7 is a graph showing the relationship between discharge level and time. [Main component symbol description] 2 : Processing chamber (processing chamber) 5 : Substrate (lower electrode) 5a : convex portion 5b : flange portion 6 : focus ring 13 : integrator 1 4 : high frequency power supply 27 : mass flow control 3 0 : Exhaust device 5 0 : Device controller -17- 201117284 5 1 : End point detector 42 : High frequency generating device