TW201115196A - Grating-assist three dimension waveguide couple device and a method for manufacturing thereof - Google Patents
Grating-assist three dimension waveguide couple device and a method for manufacturing thereof Download PDFInfo
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201115196 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種波導耦合裝置，尤指於一波導層之 上形成至少一三維錐狀結構，透過該三維錐狀結構漸變高 度之變化與一光柵結構之輔助，以將光波於光纖與波導層 間進行能量轉換的一種光柵輔助式之三維錐狀波導耦合裝 置及其製造方法。 φ 【先前技術】 隨著咼速網路時代來臨，為了因應網際網路對於頻寬 上之需求，因此，使得光通訊領域之發展越趨進步，其中， 更包括了光學元件之發展。由於光波之波長遠小於微波之 波長’故光學元件具有代替高頻電子元件之潛力，因此， 光學元件的研發係於光通訊領·域之中扮演了極重要之角 色。 _ 光學元件可分為主動元件、及被動元件，主動元件係 指具有可執行能量轉換功能之光學元件，例如電光調制器 月b夠進行電光轉換之光源，而被動元件所指的是對於光波 呈現靜態轉換效應之光學元件，例如熟知的透鏡、及反射 鏡等。 耗合器係屬於被動元件的一種，其功能係可將光能量 於波導管（waveguide)與波導管之間、或者光纖（打“犷） 與波導管之間互相轉換。耦合器依照其耦合光波方向之不 201115196 -1* « 5可刀為顺向輕合器（c〇directi〇n 叩⑹與反向輕合器 (C〇ntra_direetiGn_pier)，當兩個波導管的傳播常數相同 寺可利用順向耗合器使得光波可於兩個波導管間進行能 繼’即可將光波由一波導管導入另一波導管；然：: *兩個波導管的傳播常數相異時’則必須透過週期性的光 柵（gratmg)’以使得特定波長之光波能夠於兩個波導管之 間，進行能量轉換。 & 籲 冑著半導體積體化製程技術之發展，目前已經能夠利 用薄膜，儿積與微影餘刻等半導體製程技術來製造小型化之 輛合器，並於輕合器之一波導層表面製造具有辅助光波能 量轉換之一表面光柵，接著於表面光柵之上再形成一保護 層而升4光柵輔助式波導耦合器然而，這樣的耦合器 構部無法有效率地執行光波能量轉換，並具有諸多之缺 點： φ 1.該光柵辅助式波導輕合器係透過該表面光拇之辅助而加 以改Q其光忐量耦合效率，但是光柵輔助式波導耦合器 與' 光波傳播裝置，例如一光纖，進行光能量轉換時， 由於光拇週期和光波長必須有一定的關係（相位匹配） 才可達到有效之能量轉換，因此對於寬頻光源其總體耦 合效率將受到限制。 2·該光柵辅助式波導_合11與該光纖之連接方式，係透過 該表面光拇上方之該保護層而連接，因此，連接時必須 201115196 將光纖對準保講Μ β + 層之表面，以完成兩者之連接，然而， :此直立式的連接方式，對於入射角度相當地敏感，使 付在最"產°°的封装過程中，往往造成良率低因而增加 成本’同時對於光柵辅助式波導耗合器之通訊效果造成 影響。 3.該光柵辅助式波導輕合器之高度（厚度）係受限於半導 體之薄膜製程，而無法被製作得太高。 • ®此’本案之發明人有鑑於上述該光柵輔助式波導耦 δ器仍”有諸多之缺點，極力加以研究，終於研發完成本 發明之一種光柵輔助式之三維結構波導耦合裝置及其製造 方法。 【發明内容】 本發明之主要目的，在於提供一種光柵輔助式之三維 結構波導耦合裝置，透過三維結構層三維尺度之非同次 籲 （non-hom〇geneous )變化，可協助光波於光纖與波導層之 間進行能量轉換，使得光波更容易導入波導層内傳遞，提 升光波能量轉換之效率。 本發明之另一目的，在於提供一種光柵輔助式之三維 結構波導耦合裝置之製造方法，係可利用半導體之製程技 術’以製作辅助光柵係形成於波導層上方之光栅輔助式三 維結構波導耦合裝置。 本發明之再一目的’在於提供一種光栅輔助式之三維 201115196 結構波導搞合裝置之製造方法，係可利用半導體之製程技 術’以製作輔助光柵係形成於三維結構層上方之光撕辅助 式三維結構波導耦合裝置。 因此，為了達到上述之主要目的，本案之發明人提出 一種光栅輔助式之三維結構波導耦合裝置，其包括：一第 一基板；一波導層；至少一三維結構層，係形成於該波導 層之一表面，該二維結構層形成時兩側之間具有一高度 差，且其單位表面積係隨著該高度差而改變，因此造成三 維尺度之變化，故，當光波於三維結構層之間傳遞至某一 尺度時，三維結構層與波導層之傳播常數將一致，而使得 光波被導入於波導層之内；及至少一辅助光栅，該輔助光 柵可形成於該波導層之一表面，或形成於該三維結構層之 表面，當光波於三維結構層之間傳遞且未達三維結構層 與波導層傳播常數將一致之該尺度時，輔助光柵可輔助將 光波導入波導層。 且為了達到上述之另一目的，本案之發明人提出—種 光柵輔助式之三維結構波導耦合裝置之製造方法，該方法 包括以下步驟：〇)於一第一基板上形成一波導層；（2) 使用一第一光罩於該波導層之上製作至少一辅助光栅；（3) 將一第二基板製作成一注膜基板；（4)將該注膜基板反面 置於波導層之上；（5)利用注膜基板於波導層之上製作一 二維結構層；（0)將注膜基板從波導層上方移除；及（7) 201115196 使用具有至少一平面錐狀圖形之一第二光罩將該三維結構 層製作成至少一三維錐狀結構。 而為了達到上述之再一目的，本案之發明人提出—種 光拇輔助式之三維結構波導耦合裝置之製造方法，該方法 包括以下步驟：（〇於一第一基板上形成一波導層；（2) 將一第二基板製作成具有至少一光柵結構之一注膜基板. (3)將該注膜基板反面置於該波導層之上；（4)利用注膜 •基板於波導層之上製作一三維結構層；（5)將注膜基板從 波導層上方移除；及（6)使用具有至少一平面錐狀圖形之 一第二光罩將該三維結構層製作成至少一三維錐狀結構。 【實施方式】 之一種光栅辅助 ’以下將配合圖 為了能夠更清楚地描述本發明所提出 式之三維結構波導耦合裝置及其製造方法 示，詳盡說明之。201115196 VI. Description of the Invention: [Technical Field] The present invention relates to a waveguide coupling device, and more particularly to forming at least one three-dimensional tapered structure over a waveguide layer, through which a change in the gradient height of the three-dimensional tapered structure is A grating-assisted three-dimensional tapered waveguide coupling device for assisting energy conversion between optical fibers and a waveguide layer, and a method for fabricating the same. φ [Prior Art] With the advent of the idle network era, in order to respond to the demand for bandwidth in the Internet, the development of the optical communication field has become more and more advanced, including the development of optical components. Since the wavelength of the light wave is much smaller than the wavelength of the microwave, the optical element has the potential to replace the high-frequency electronic component. Therefore, the development of the optical element plays a very important role in the field of optical communication. _ Optical components can be divided into active components and passive components. Active components refer to optical components with executable energy conversion functions, such as electro-optic modulators, which are capable of performing electro-optical conversion, while passive components are referred to as optical waves. Optical elements of static conversion effects, such as well-known lenses, mirrors, and the like. The consumable device is a passive component that functions to convert light energy between a waveguide and a waveguide, or between an optical fiber ("犷") and a waveguide. The coupler is coupled to the light wave. The direction is not 201115196 -1* « 5 can be a forward light combiner (c〇directi〇n 叩 (6) and reverse light combiner (C〇ntra_direetiGn_pier), when the propagation constants of the two waveguides are the same, the temple can be used To the consumable device, the light wave can be relayed between the two waveguides, that is, the light wave can be guided from one waveguide to the other; however: * When the propagation constants of the two waveguides are different, the period must pass through The grating (gratmg) is used to enable energy conversion of light waves of a specific wavelength between two waveguides. & Aiming at the development of semiconductor integrated process technology, it is now possible to utilize thin films, chiral and micro A semiconductor process technology such as a shadow engraving to manufacture a miniaturized clutch, and a surface grating having an auxiliary light wave energy conversion is fabricated on the surface of one of the waveguide layers of the light combiner, and then formed on the surface grating. Layer-up 4 grating-assisted waveguide coupler However, such a coupler configuration cannot efficiently perform light-wave energy conversion and has many disadvantages: φ 1. The grating-assisted waveguide light coupler passes through the surface of the light Auxiliary to change the coupling efficiency of Q, but the grating-assisted waveguide coupler and the 'optical wave propagation device, such as an optical fiber, must have a certain relationship (phase matching) due to the optical repetition period and optical wavelength when performing light energy conversion. Effective energy conversion can be achieved, so the overall coupling efficiency of the broadband source will be limited. 2. The grating-assisted waveguide _11 is connected to the fiber by the protective layer above the surface optical thumb. Therefore, the connection must be 201115196 to align the fiber to the surface of the Μβ + layer to complete the connection between the two, however, this upright connection is quite sensitive to the angle of incidence, so that it is paid at the most In the packaging process of °°, the yield is often low and the cost is increased. At the same time, the communication effect of the grating-assisted waveguide consumulator is made. 3. The height (thickness) of the grating-assisted waveguide combiner is limited by the thin film process of the semiconductor, and cannot be made too high. • The inventor of the present invention has the above-mentioned grating-assisted waveguide. The coupling δ device still has many shortcomings, and it is researched to finally develop a grating-assisted three-dimensional structure waveguide coupling device and a manufacturing method thereof according to the present invention. SUMMARY OF THE INVENTION The main object of the present invention is to provide a grating assist The three-dimensional structure waveguide coupling device can transmit the energy between the optical fiber and the waveguide layer through the non-hom〇geneous change of the three-dimensional dimension of the three-dimensional structural layer, so that the light wave is more easily introduced into the waveguide layer. Passing, improving the efficiency of light wave energy conversion. Another object of the present invention is to provide a grating-assisted three-dimensional structure waveguide coupling device manufacturing method, which can utilize a semiconductor process technology to fabricate an auxiliary grating system to form a grating-assisted three-dimensional structure waveguide coupling device over a waveguide layer. . A further object of the present invention is to provide a grating-assisted three-dimensional 201115196 structure waveguide bonding device manufacturing method, which is capable of fabricating an auxiliary grating system formed on a three-dimensional structural layer by using a semiconductor process technology. Structure waveguide coupling device. Therefore, in order to achieve the above-mentioned main object, the inventor of the present invention proposes a grating-assisted three-dimensional structure waveguide coupling device comprising: a first substrate; a waveguide layer; at least one three-dimensional structural layer formed in the waveguide layer a surface, the two-dimensional structural layer is formed with a height difference between the two sides, and its unit surface area changes with the height difference, thereby causing a change in three-dimensional dimensions, so when light waves are transmitted between the three-dimensional structural layers At a certain scale, the propagation constants of the three-dimensional structural layer and the waveguide layer will be identical, so that the light waves are introduced into the waveguide layer; and at least one auxiliary grating, which may be formed on one surface of the waveguide layer, or formed On the surface of the three-dimensional structural layer, when the light wave is transmitted between the three-dimensional structural layers and the dimension of the three-dimensional structural layer and the waveguide layer propagation constant will be the same, the auxiliary grating can assist in introducing the light wave into the waveguide layer. In order to achieve the above other object, the inventor of the present invention proposes a method for manufacturing a grating-assisted three-dimensional structure waveguide coupling device, the method comprising the steps of: forming a waveguide layer on a first substrate; Using a first mask to form at least one auxiliary grating on the waveguide layer; (3) forming a second substrate as a film-injecting substrate; and (4) placing the opposite surface of the film-forming substrate on the waveguide layer; 5) using a film-coated substrate to form a two-dimensional structural layer on the waveguide layer; (0) removing the film-coated substrate from above the waveguide layer; and (7) 201115196 using a second light having at least one planar tapered pattern The cover forms the three-dimensional structural layer into at least one three-dimensional tapered structure. In order to achieve the above-mentioned further object, the inventor of the present invention proposes a method for manufacturing a three-dimensional structure waveguide coupling device for an optical thumb-assisted method, the method comprising the steps of: forming a waveguide layer on a first substrate; 2) forming a second substrate into a film-coated substrate having at least one grating structure. (3) placing the reverse side of the film-coated substrate on the waveguide layer; (4) using the film-injecting substrate on the waveguide layer Making a three-dimensional structural layer; (5) removing the film-coated substrate from above the waveguide layer; and (6) forming the three-dimensional structural layer into at least one three-dimensional cone using a second photomask having at least one planar tapered pattern [Embodiment] One type of grating assisting will be described in detail below in order to more clearly describe the three-dimensional structure waveguide coupling device of the present invention and its manufacturing method.
凊參閱第一圖，係一種光柵輔助式之三維結構波導耦 合裝置之第一實施例側視圖，一種光柵辅助式之三維結構 波導耦合裝置1係包括： 一第一基板11，以作為該光柵輔助式之三維結構波導 輕合裝置之…’該第一基板u可為半導體'絕緣層 (silicon-on-insu丨at〇r ’ S0I )基板、氮化氧矽-絕緣層 (SiON-〇n-i_lt〇r)基板、氮化石夕—絕緣層（siN 〇n-insulator)基板、或半導體基板，於第_實施例中第一 201115196 111與一絕緣層 基板11為一 SOI基板，其具有一半導體層 112 ； 一波導層丨2,係形成於該第一基板U之上以作為 光波之傳播層，形成該波導層12之材 』為♦( silicon，Referring to the first figure, a side view of a first embodiment of a grating-assisted three-dimensional structure waveguide coupling device, a grating-assisted three-dimensional structure waveguide coupling device 1 comprising: a first substrate 11 as a grating auxiliary The three-dimensional structure waveguide light combining device... 'The first substrate u can be a semiconductor' insulating layer (silicon-on-insu丨at〇r 'S0I) substrate, a silicon nitride-insulating layer (SiON-〇n- An i_lt〇r) substrate, a silicon nitride-insulating layer (siN 〇n-insulator) substrate, or a semiconductor substrate. In the first embodiment, the first 201115196 111 and an insulating layer substrate 11 are an SOI substrate having a semiconductor. a layer 112 is formed on the first substrate U as a propagation layer of light waves, and the material forming the waveguide layer 12 is ♦ (silicon,
Si )、氮化石夕(siliC0I1 nitride，SiN、、备儿产 )I化氧矽（silicon oxinitride，SiON)、或碳化矽（silic n carbine，Sic)，而 於第一實施例中’波導層12之材料為砂； 至少一輔助光柵4,係形成於該波導層12之上該輔 助光栅4可輔助地將光波導入波導層12内 及 至少一三維結構層15，係形成於該波導層a之上， 該三維結構層15可依實際需求而不限只於波導層丨上 形成-個’三維結構層15 I感光材料，其#料編號為 SU-8,透過該感光材料之特性，使得三維結構層15形成時 係整個包覆住該辅助光柵4,並造成三維結構層15之下表 面（底面）的兩側邊之間具有一高户塞 又左，而造成三維結構 層15具有三維尺度之變化。故，當# 田先波於三維結構層15 之間傳遞時’將由於三維結構層15漸蠻 啊雙之同度變化，使得 三維結構層15與波導層12之傳播當叙 预*數—致，而提高了兩 者間的耦合參數’並進一步有效率地骆止 千地將先波由三維結構層 15内直接地導入於波導層12内傳遞， ^ 而楗升了光波於兩 傳播介質間的之能量耦合效率。且，輔 荆助光栅4亦可提高 三維結構層15之有效折射係數，而可争L α坦1 』更加地提升三維結構 201115196 1 5之間傳遞 而致使三維結 層15之柄合參數值’使得光波於三維結構層 時更谷易因為三維結構層15漸變之高度， 構層15與波導層12之傳播常數一致。Si), nitrite (Si), silicon oxinitride (SiON), or silic n carbine (Sic), and in the first embodiment, the 'waveguide layer 12 The material is sand; at least one auxiliary grating 4 is formed on the waveguide layer 12. The auxiliary grating 4 can auxiliaryly introduce light waves into the waveguide layer 12 and at least one three-dimensional structural layer 15 formed on the waveguide layer a. The three-dimensional structural layer 15 can be formed on the waveguide layer 不限 without forming a 'three-dimensional structural layer 15 I photosensitive material according to actual needs, and the # material number is SU-8, and the characteristics of the photosensitive material are used to make three-dimensional When the structural layer 15 is formed, the auxiliary grating 4 is entirely covered, and a high-cement and left-side between the two sides of the lower surface (bottom surface) of the three-dimensional structural layer 15 is caused, and the three-dimensional structural layer 15 has a three-dimensional scale. Change. Therefore, when #田先波 is transferred between the three-dimensional structural layers 15, 'the three-dimensional structural layer 15 gradually becomes the same as the double-degree change, so that the propagation of the three-dimensional structural layer 15 and the waveguide layer 12 is predicted to be The coupling parameter between the two is improved and the first wave is directly introduced into the waveguide layer 12 by the three-dimensional structural layer 15 in the first place, and the light wave is lifted between the two propagation media. Energy coupling efficiency. Moreover, the auxiliary grating 6 can also increase the effective refractive index of the three-dimensional structural layer 15, and can compete for the transfer of the three-dimensional structure 15 and the resulting parameter value of the three-dimensional layer 15 It is easier to make the light wave in the three-dimensional structural layer because the height of the three-dimensional structural layer 15 is gradually changed, and the configuration 15 is consistent with the propagation constant of the waveguide layer 12.
'於上述之第一實施例十，接著請繼續參閱第二圖，係 先桃輔助式之三維結構波導輕合裝置之施例立體社 構圖’該三維結構層15係形成-三維錐狀結# 19，該、I 維錐狀結構19之上表面（頂面）與下表面（底面）為幾: :狀之-錐狀表面，因此，三維結構層15之頂面係部分覆 盍該波導層12之上表面；當然，於製作之時，三維結構層 15之頂面亦可全部覆蓋波導層12之上表面且必須特 別說明的是，當光波由外部輸人於三維結構層Η傳遞之 時，若尚未達到最佳的能量輛合效率，而無法透過三維結 構層15直接地將光波導人波導層12内傳遞，此時，仍可 透過該輔助光栅4而輔助地將光波導入於波導層12之内。 另外，基於該三維結構層15具有三維尺度變化之特性 下，於製作之時，亦可將上述第一實施例之三維結構層η 稍作變形如下： (a )將該三維結構層丨5之幾何形狀上表面（頂面），以一 不規則表面代替，且，三維結構層15下表面（底面） 之兩側邊之間，不具有高度差。 (b )於製作該二維結構層丨5之時，若將三維結構層1 $以 (a)之方式製作，而形成不同於該三維錐狀結構之 201115196 三維結構層1 5，其仍具有三維尺度變化之特性，且為 非同次（non-homogeneous )之三維尺度變化，因此， 當光波於三維結構層1 5内傳遞時，將由於三維結構 (non-homogeneous )之三維尺度變化， 使得三維結構層15之傳播常數與該波導層12之傳播 常數一致’故’當光波於此三維結構層15内傳遞時， 其仍可因為三維結構層15之膏耦合參數值，而被有 效率地導入波導層12内傳遞。 另外’請參閱第三圖，係光柵輔助式之三維結構波導 耦合裝置之第二實施例側視圖，該光柵輔助式之三維結構 波導輕合裝置1之第二實施例，係包括： 第一基板11 ’以作為該光栅輔助式之三維結構波導 耦合裝置1之基層； 波導層12，係形成於該第—基板11之上，以作為 鲁 光波之傳播層；'In the first embodiment of the above tenth embodiment, please continue to refer to the second figure, which is a three-dimensional structure layer 15 system formed by the first peach-assisted three-dimensional structure waveguide light-splicing device. 19. The upper surface (top surface) and the lower surface (bottom surface) of the I-dimensional tapered structure 19 are: a tapered-shaped surface, and therefore, the top surface of the three-dimensional structural layer 15 partially covers the waveguide layer. 12 top surface; of course, at the time of fabrication, the top surface of the three-dimensional structural layer 15 may also completely cover the upper surface of the waveguide layer 12 and must be specifically stated when the light wave is transmitted from the outside to the three-dimensional structural layer If the optimal energy sharing efficiency has not been achieved, and the optical waveguide human waveguide layer 12 cannot be directly transmitted through the three-dimensional structural layer 15, at this time, the auxiliary grating 4 can still be used to assist in introducing the optical wave into the waveguide layer. Within 12. In addition, based on the three-dimensional structural layer 15 having a three-dimensional scale change, the three-dimensional structural layer η of the first embodiment may be slightly modified as follows: (a) the three-dimensional structural layer 丨5 The upper surface of the geometric shape (top surface) is replaced by an irregular surface, and there is no height difference between the two sides of the lower surface (bottom surface) of the three-dimensional structural layer 15. (b) at the time of fabricating the two-dimensional structural layer 丨5, if the three-dimensional structural layer 1$ is fabricated in the manner of (a), a 201115196 three-dimensional structural layer 15 different from the three-dimensional tapered structure is formed, which still has The characteristics of the three-dimensional scale change, and are non-homogeneous three-dimensional scale changes, therefore, when the light wave is transmitted in the three-dimensional structural layer 15 , it will change due to the three-dimensional scale of the non-homogeneous structure. The propagation constant of the three-dimensional structural layer 15 is identical to the propagation constant of the waveguide layer 12. Therefore, when the light wave is transmitted in the three-dimensional structural layer 15, it can still be efficiently used because of the paste coupling parameter value of the three-dimensional structural layer 15. It is introduced into the waveguide layer 12 for transmission. In addition, please refer to the third figure, which is a side view of a second embodiment of a grating-assisted three-dimensional structure waveguide coupling device. The second embodiment of the grating-assisted three-dimensional structure waveguide coupling device 1 includes: a first substrate 11' is a base layer of the grating-assisted three-dimensional structure waveguide coupling device 1; a waveguide layer 12 is formed on the first substrate 11 to serve as a propagation layer of the Luguang wave;
三維結構層15與波導層j 2 至少一三維結構層15，係形成於該波導層12之上 化，因此，當光波於三維結構層 ^維結構層1 5漸變之高度，使得 12之傳播常數一致，而提高了兩 201115196The three-dimensional structural layer 15 and the waveguide layer j 2 are at least one three-dimensional structural layer 15 formed on the waveguide layer 12, so that when the light wave is gradated to the height of the three-dimensional structural layer, the propagation constant of 12 Consistent, and improved two 201115196
♦ I 者間的輕合參數’並進—步有效率地將光波由三維結構層 15内直接地導人於波導们2内傳遞，而提升了光波於兩 傳播介質間的之能量耦合效率；及 至沙—辅助光柵4，該輔助光柵4係形成於該三維結 構層b之上表面（頂面）’透過辅助光柵4可提高三維結 構層15之有效折射係數，以提升三維結構層15之輕合^ 數值，而可辅助地將光波導入波導層12内。♦ I-light-parameter parameter 'parallel-step-efficiently transmits light waves directly from the three-dimensional structural layer 15 into the waveguides 2, thereby improving the energy coupling efficiency of the light waves between the two propagation media; A sand-assisted grating 4 is formed on the upper surface (top surface) of the three-dimensional structural layer b. The effective refractive index of the three-dimensional structural layer 15 can be improved by the auxiliary grating 4 to enhance the lightness of the three-dimensional structural layer 15. The value is used to assist in introducing light waves into the waveguide layer 12.
與第-實施例相同的是，於第二實施例中，該三維結 構層15係形成一三維錐狀結構，故，三維結構層15之上 表面（頂面）與下表面（底面）為-錐狀表面，因此，三 維結構層15之頂面係部分覆蓋該波導層12之上表面；當 然’於製作之時，亦可使得三維結構層15之頂面全部覆蓋 波導層12之上表面；且，同樣地’基於三維結構層15具 有三維尺度變化的特性下，亦可將第二實施例之三維結構 層15稍作變形如下： (〇將該三維結構層15冑何形狀之上表® (頂φ )，以一 維結構層1 5上表面（底3 不規則表面代替，且 之兩側邊之間，不具有高度差 d)於製作該二維結構層15時，若以（c)之方式製作 該三維錐狀結構之三維結構層15,其仍具有三維尺 變化之特性，且為非同次（n〇n h〇m〇gene〇us )之 維尺度變化’故，當光波於三維結構層15内傳遞κ 12 201115196 將由於三維結構層i 5非同次（n〇n_h〇m〇gene〇us )之 二維尺度變化，使得三維結構層15之傳播常數與該 波導層12之傳播常數—致，因此，當光波於此三維 結構層15内傳遞時，其可被有效率地導入波導層12 内。 並且’於第—實施例與第二實施例之中，該三維結構 層15係透過注膜之方式所製作，因此，三維結構層”之 高度可被製作成高於10微米之大尺寸，故，當該光栅輔助 式之一维，.Ό構波導輕合裝置i與一外部之光波傳遞裝置連 接時，例如’與一光纖連接，只需將該光纖對準三維結構 層15之開口端，即可完成連接。另外，必須強調的是，雖 然該光拇輔助式之三維結構波導耗合裝置！之第-實施例 與第二實施例’係將該三維結構層15定義為該三維錐狀結 構’然而’本發明衫限定三維結構層15必須是三維錐狀 結構，如上述對於第一實施例與第二實施例之非三維錐狀 結構之製作方式之定義，盆製 所裝作出之二維結構層15係具 有三維尺度非同次（繼‘㈣咖簡）變化之特性，故三 =二，播常數係隨著尺度變化而改變，使得三維 而提"數可與該波導層12之傳播常數相同，因 知升了二維結構層15與波 而处执士 t 网香間的耦合參數， 而此夠有效率地將光波由三 m . 再s >導入波導層12内 傳遞。因此’日後若有 助式之二維結構波導耦合 13 201115196 裝置1為基礎之其它發明，若其形成之三維結構層ί5無法 具^二.维尺度非料（。㈣e〇Us )變化之特性’則 不f其幾何外形、社福总L / 、，。構係如何地變化，皆無法利用「傳播 常數相同」之手段，而楛弁 升光波於兩傳播介質間之能量耦 合效率。 上述已完全揭露該光柵辅助式之三維結構波導麵合裝 置之^層結構與其材料特性’為了能夠以半導體製程技術 里地製作光柵輔助式之三維結構波導麵合裝置，請參 閱第四圖’係一種光柵辅助式之三維結構波導耦合裝置之 製作方法"IL程圖，並同時參閱第五圖至第十二圖之製 程不意圖’光栅輔助式之三維結構波導輕合裝置係具有兩 種製作方法，其第―製作方法包括以下步驟： 執行步驟（201)，於一第一基板u上形成一波 導層12;接著，鈾， 執仃步驟（202 )，使用一第一光罩3於該 波導層12之上翻从 製作至少一輔助光柵4 ;然後，執行步驟 (203 )，將一第一 —基板221製作成一注膜基板22 ;接著， 步驟（2〇4) ’將該注膜基板22反面置於波導層12之 後執订步驟（205 )，利用注臈基板22於波導層 2之上製作三維結構層15 ;當該三維結構層15製作完 灸則執行步驟（2〇6)，將注膜基板22從波導層12 上方移降· I、/ U t ” ’ 及’執行步驟（207 )，使用具有至少—平面 錐狀圖形61 $ — # 第二光罩6將該三維結構層1 5製作成至 201115196Similar to the first embodiment, in the second embodiment, the three-dimensional structural layer 15 forms a three-dimensional pyramid structure, so that the upper surface (top surface) and the lower surface (bottom surface) of the three-dimensional structural layer 15 are - a tapered surface, therefore, the top surface of the three-dimensional structural layer 15 partially covers the upper surface of the waveguide layer 12; of course, at the time of fabrication, the top surface of the three-dimensional structural layer 15 may also completely cover the upper surface of the waveguide layer 12; Moreover, similarly, the three-dimensional structural layer 15 of the second embodiment can be slightly modified as follows based on the characteristic that the three-dimensional structural layer 15 has a three-dimensional scale change: (〇 the three-dimensional structural layer 15 has a shape above the surface® (top φ ), with the upper surface of the one-dimensional structural layer 15 (the bottom 3 irregular surface is replaced, and the height difference d between the two sides) is used to make the two-dimensional structural layer 15 The three-dimensional structural layer 15 of the three-dimensional pyramidal structure is formed, which still has the characteristics of three-dimensional rule change, and is a dimensional change of the non-same (n〇nh〇m〇gene〇us), so when the light wave is Transfer of κ 12 within the three-dimensional structural layer 15 201115196 will be due to the three-dimensional structural layer i 5 The two-dimensional variation of the non-homogeneous (n〇n_h〇m〇gene〇us) causes the propagation constant of the three-dimensional structural layer 15 to be consistent with the propagation constant of the waveguide layer 12, and therefore, when the light wave is within the three-dimensional structural layer 15 When transferred, it can be efficiently introduced into the waveguide layer 12. And in the first embodiment and the second embodiment, the three-dimensional structural layer 15 is formed by means of a film injection, and therefore, the three-dimensional structural layer" The height can be made larger than 10 micrometers, so when the one of the grating-assisted ones is connected to an external lightwave transmitting device, for example, 'connected to an optical fiber, The connection can be completed by simply aligning the optical fiber with the open end of the three-dimensional structural layer 15. In addition, it must be emphasized that the optical-slide-assisted three-dimensional structure waveguide consuming device is the first embodiment and the second implementation. For example, the three-dimensional structural layer 15 is defined as the three-dimensional tapered structure. However, the three-dimensional structural layer 15 of the present invention must be a three-dimensional tapered structure, such as the non-three-dimensional cone described above for the first embodiment and the second embodiment. Systematic structure According to the definition of the method, the two-dimensional structural layer 15 made by the potting system has the characteristics of three-dimensional scale non-same order (following the '(four) coffee simple) change, so three=two, the broadcast constant system changes with the scale change, making the three-dimensional The reference number can be the same as the propagation constant of the waveguide layer 12, because it knows that the coupling parameter between the two-dimensional structural layer 15 and the wave is at the scent of the net, and the light wave is efficiently efficient by three m. And then s > is introduced into the waveguide layer 12. Therefore, if the two-dimensional structure of the waveguide is coupled in the future, the other three inventions based on the device 1 may not have the dimension of the three-dimensional structure layer ί5. Unexpected (. (4) e〇Us) the characteristics of the change 'is not its geometric shape, social welfare total L /,,. How the structure changes, it is impossible to use the "propagation constant is the same" means, and the energy coupling efficiency between the two propagation media is increased. The layer structure and material properties of the grating-assisted three-dimensional structure waveguide surface-engaging device have been fully disclosed. In order to be able to fabricate a grating-assisted three-dimensional structure waveguide surface-engaging device in a semiconductor process technology, please refer to the fourth figure. A grating-assisted three-dimensional structure waveguide coupling device manufacturing method "IL process diagram, and also refers to the process of the fifth to twelfth drawings. The grating-assisted three-dimensional structure waveguide light-synthesis device has two kinds of fabrications. The method of the first method includes the following steps: performing step (201), forming a waveguide layer 12 on a first substrate u; then, uranium, performing the step (202), using a first mask 3 The waveguide layer 12 is flipped over to form at least one auxiliary grating 4; then, step (203) is performed to form a first substrate 221 into a film injection substrate 22; then, step (2〇4) 'the film substrate After the reverse side is placed on the waveguide layer 12, the step (205) is performed, and the three-dimensional structural layer 15 is formed on the waveguide layer 2 by using the injection substrate 22; when the three-dimensional structural layer 15 is finished with moxibustion, the steps are performed (2〇6) ), the film-coated substrate 22 is removed from above the waveguide layer 12 · I, / U t ′′ ' and 'execution step (207 ), using at least a flat cone-shaped pattern 61 $ — # second mask 6 to the three-dimensional Structural layer 1 5 is made up to 201115196
• I 少一三維錐狀結構19。复 ，該第一基板11可為一半導 體一絕緣層基板、一氮化矽〜紹A 千導 板，而於第二製作方法中，係緣層基板、與一半導體基 作為第-基板U;波導層=用該半導體-絕緣層基板 氮化氧石夕、與一碳化石夕，而2可為—石夕、一氮化石夕、一 M 於第二製作方法t，係於第一 基板11之上形成該矽層以 兩，皮導層12;且，該第-其 板221可為一玻璃、 1第-基 t # ^ ^, 、與—矽，而於第二製作方法 lc .、 基板221 ;另外，三維妹槿屉 為一感光材料，於第二製 之嗜咸弁心 展作方法中係採用材料編號SU-8 之該感先材料，以形成三維結構層Μ。 上述為該光栅辅助式之二 製作方氺沾士 一維結構波導耦合裝置之第一 之詳細步驟★ 閱第十二圖，係步驟（ 202) 圖，係第， 帛五圖、第六圖與第七 製程干意圖 <俯視圖與於波導層之上製作輔助光栅之 =圖，其中，步驟(㈣更包括以下詳細步驟： 執行步驟（ 2021 )，塗佈—第 該波導層 师第-感光材料Μ於 之上，接著，執行步驟（ 2022)，將且有# 柵圖形^將具有一先 之該第一光罩3置於咳第忒丄 方；缺後，抽 $於該第-感光材料Η之上 …、爰執行步驟（2023 )，以曝光之方 形31轉 先之方式，將該光柵圖 王第—感光材料14;接著，勃广止 以顯影之方今 Μ執仃步驟（ 2024)， 式，於第一感光材料14上形 以及，執 上形成先柵圖形31; ^驟（2025)，以敍刻之方式剪 ^製作出該輔助光 r »—· -» 15 201115196 拇4。 並且，如上述該光柵輔助式之三維結構波導耦合萝 之第一製作方法的步驟流程，請參閱第十四圖，係步 (203 )之詳細步驟流程圖，並請同時參閱第八圖，係將 一基板製作為注膜基板之製程示意圖，其中，步驟（2〇3 更包括以下詳細步驟： 首先，執行步驟（2〇31)，製備該第二基板221 :拯著 執行步驟⑽)，於第二基板221之上形成一斜’ 222;然後，執行步驟（2〇33)，塗佈一石夕聚合物a於第: 基板221之上；以及，執行步驟（2〇34)，等待該矽聚合 16固化’其中’第一製作方法所採用之該矽聚合物為聚二 甲基石夕氧烷（P〇1ydimethyl siloxane ’ PDMS )。 且’如上述該光柵辅助式之三維結構波導耦合裝置之 第-製作方法的步驟流程，請參閱第十五圓，係步驟（則 之詳細步驟流程圖’並請同時參閱第九圖與第十圖，係注 膜基板之底視圖與利用注膜基板於波導層之上製作三維結 構層之示意圖，其中，步驟（2〇5)审 7骅〈2〇5)更包括以下詳細步驟： 首先’執行步驟（2〇5丨）乂對 耵早之方式將該注膜基板 22置於該波導層12之上.技芏 ^ y 之上，接著，執行步驟（2〇52)，將一 第三感光材料1 8注入於注膜基板2 “興波導層12之間的凹 槽；以及，執行步驟（2〇53)，等 矛行这第二感光材料18固 化0 201115196 請再參閱第十六圖，係步驟（ 207)之詳細方法步驟流 程圖’並同時參閱第十一圖與第十二圖，係第二光單之： 視圖與將三維結構層製作成至少—三維錐狀結構之製程示 思圖其中#驟（2G7 )更包括以下詳細步驟： 貫先執订步驟（ 2071 )，將該第二光罩6置於該三維 結構層15上方；接英，勒仁止 接著，執仃步驟（2072)，以曝光之方式 於二維結構層15之上定義+ $ t 上疋我出至少一個該平面錐狀圖形 61 ;以及’執行步驟（2〇73)，以顯影之方式將三維結構層 15製作成為該至少-三維錐狀結構19。如此，透過上述該 光柵辅助式之三維έ士播道^ 维、，，。構波導耦合褒置之第-製作方法與1 詳細步驟流程，如第一圖盥 …、 弟一圖所不，光柵輔助式 維結構波導輕合裝置被製作完成。 - 另外，該光柵輔助式之=维社接如人壯 ^ 一維結構耦合裝置更有第二製 方法，明參閱第十七圖，係 輕合裝置之第二製作方法、^輔助式之三維結構波導 至第二十圖之· …程圖，並同時參閱如第十八圖 一 意圖’光柵輔助式之三維結構波導耦 合裝置之第二製作方沬.^ 稱及導耦 I作方法，係包括以下步驟： 首先，執行步驟（301)，於 導層】？.拉# 第基板11上形成—波 ，接者，執行步驟〇02)，• I has one less three-dimensional cone structure 19 . The first substrate 11 may be a semiconductor-insulating layer substrate, a tantalum nitride layer, and in the second manufacturing method, the edge layer substrate, and a semiconductor substrate as the first substrate U; The waveguide layer = using the semiconductor-insulating layer substrate oxynitride, and a carbonized stone eve, and 2 can be - shi, a nitridite eve, a M in the second manufacturing method t, on the first substrate 11 The enamel layer is formed on the two, the skin guide layer 12; and the first plate 221 can be a glass, a 1st-base t #^^, and -矽, and in the second production method lc. The substrate 221; in addition, the three-dimensional sister drawer is a photosensitive material, and the first material of the material number SU-8 is used in the second method of the salty and sable development method to form a three-dimensional structural layer. The above is the first step of the first method of fabricating the grating-assisted two-dimensional structure waveguide coupling device. ★ The twelfth figure is the step (202), the first, the fifth, the sixth and The seventh process dry intention <top view and the auxiliary grating on the waveguide layer =, wherein the step ((4) further comprises the following detailed steps: performing step (2021), coating - the waveguide layer division first photosensitive material Above, then, step (2022) is performed, and there is a # grid pattern ^ which has a first photomask 3 placed on the cough side; after the missing, the first photosensitive material is pumped Η Above..., 爰 Execute step (2023), and use the square of the exposure 31 to firstly, the grating image of the photographic material-photosensitive material 14; then, the embossing of the development of the plaque (2024) Forming on the first photosensitive material 14 and forming a first gate pattern 31; ^ (2025), and cutting the auxiliary light r »-· -» 15 201115196 to the thumb 4 in a sculpt manner. And, as described above, the grating-assisted three-dimensional structure waveguide is coupled to the first production side For the flow of the method, please refer to the fourteenth figure, the detailed step flow chart of step (203), and also refer to the eighth figure, which is a schematic diagram of the process of making a substrate as a film-coated substrate, wherein the steps (2〇) 3 further includes the following detailed steps: First, the step (2〇31) is performed to prepare the second substrate 221: the step (10) is performed steadily, and an oblique '222 is formed on the second substrate 221; then, the step (2) is performed. 〇33), coating a radix polymer a on the substrate 221; and, performing the step (2〇34), waiting for the ruthenium polymerization 16 to be cured, wherein the ruthenium polymer used in the first production method is P〇1ydimethyl siloxane 'PDMS. ' And the step flow of the first method of fabricating the grating-assisted three-dimensional structure waveguide coupling device, please refer to the fifteenth circle, the step ( Then the detailed step flow chart 'and please refer to the ninth and tenth views at the same time, which is a bottom view of the film substrate and a schematic diagram of forming a three-dimensional structure layer on the waveguide layer by using the film substrate, wherein the step (2〇5) ) Review 7骅 <2〇5) The detailed steps are as follows: First, the step (2〇5丨) is performed on the waveguide layer 12 by placing the film substrate 22 on top of the waveguide layer 12. Next, the steps are performed (2〇52). a third photosensitive material 18 is injected into the groove between the waveguide substrate 12 and the waveguide layer 12; and, the step (2〇53) is performed, and the second photosensitive material 18 is cured. Referring again to the sixteenth figure, the detailed method step flow chart of step (207) is also referred to the eleventh and twelfth figures, which are the second light sheet: the view and the three-dimensional structure layer are made into at least three-dimensional The process diagram of the tapered structure, wherein the step (2G7) further comprises the following detailed steps: a step (2071) is performed first, and the second mask 6 is placed above the three-dimensional structure layer 15; Then, the step (2072) is performed to define + $ t on the two-dimensional structure layer 15 by exposure, and at least one of the planar pyramid patterns 61; and 'execution step (2〇73) to The three-dimensional structural layer 15 is formed into the at least three-dimensional tapered structure 19 in a manner of development. In this way, through the above-mentioned grating-assisted three-dimensional gentleman broadcast channel, and. The first-step manufacturing method and the detailed step flow of the waveguide coupling device are as follows: the first image is not shown, and the grating-assisted dimensional structure waveguide light combining device is completed. - In addition, the grating-assisted type = Weishe is connected to the human body. The one-dimensional structure coupling device has a second method. See the seventeenth figure, which is the second production method of the light-sense device, and the auxiliary three-dimensional method. The structure waveguide is shown in the twentieth diagram, and reference is made to the second fabrication method of the three-dimensional structure waveguide coupling device which is intended to be 'grating-assisted type', and the conduction coupling I method is used as the method. The following steps are included: First, perform step (301) in the guide layer? .拉# Forming a wave on the first substrate 11, and then performing the step 〇02),
成具有至少一第一基板221製作 光拇結構2 2 3之—、、主肢A 步驟㈤），將該注胺其把，膜基板22;然後，執行 接著杜 ^ 、土 22反面置於該波導層之上12. 接著，執行步驟（304) 12， J用皮膜基板22於波導層12之 201115196 上製作-三維結構層15 ;然後 * 1 ， 鄉（3〇5)，將注膜 基板22從波導層12上方移除；以 、 ^ 執仃步驟（306 )， 使用具有至少—平面錐狀圖形61之一第_ 第—先罩6將該三錐 結構層1 5製作成至少一三維 構19。而於第二製作 方法中所採用之該第—美. — #基板11 >皮導層12、該第二基板 221、及三維結構層15 ^表作方法相同，在此便不 多加贅述，因此，嗜炎 °月參閱第-十圖，係光柵辅助式之三維 結構波導耦合裝置之第-實施例立辦# 4 g 罘一貫施例立體結構圖，藉由上述第 二製作方式’可製作出該輔助光柵4係位於三維結構層15 上方之光柵輔助式之三維結構波導耦合裝置。 並且，如上述該光柵輔助式之三維結構波導麵合襄置 之第-製作方法的步驟流請 叫乐一十一圖，係步驟 (則之詳細步驟流程圖，並請同時參閱第十人圖，係具 有光柵結構之注膜某柄之相I丨雜同甘^ 犋丞板之側視圖，其中，步驟（302 )更 包括以下詳細步驟： 首先，執行步驟（3021 )，製備該第二基板221;接著， .、 於第一基板221之上形成一斜面凹槽 」1執行步驟（3〇23 )，於該斜面凹槽222之斜面 上形成該光柵結構223 ;接著，執行步驟（舰），塗佈一 ^合物16於第_ | 、一基板221之上；以及，執行步驟（3〇25)， 等待該碎聚人&， 口物16固化，而其中，該矽聚合物為聚二曱基 矽氧烷（PDMS)。 18 201115196 並且，如上述該光柵輔助式之三維結構波導耦合裝置 之第二製作方法的步驟流程，請參閱第二十二圖，係步驟 ( 304)之詳細步驟流程圖，並請同時參閱第十九圖係利 用具有光柵結構之注膜基板於波導層之上製作三維結構層 之示意圖，其中，步驟（304 )更包括以下詳細步驟： 首先’執行步驟（洲），以對準之方式將該注膜基板 22置於該波導層12之上；接著，執行步驟（3〇42)，將 第三感光材料18注入於注膜基板22與波導層12之間的凹 槽；以及’執行步驟（3〇43)，等待該第三感光材料 化。 最後，請參閱第二十三圖，係 流程圖，其中，步驟Mα Μ、·，田步驟 驟（306)更包括以下詳細步驟： :先’執行步驟(3061 )，將該第二光罩6置於 構層15上方；接著， 維 執仃步驟（3〇62)，以曝光之方 ;二維結構層1 5之上定羞φ姑>τ 工 疋義出該平面錐狀圖形61; 執行步驟（3063 )，L7 as於 及’ 該至少1錐/ 方式使得三維結構層15成為 二、准錐狀結構19。如此，透過上 之三維結構波導耦合裝置之第^ 栅補助式 锃’如第二圖與第二+ 艾驟流 導_人祐 不，光柵辅助式之三維結構波 導耦合裝置1即被製作完成。 攝皮 上述已完整且清接从命 月楚地揭硌了該光柵輔助式 '皮導耦合裝置與其製造古土 ^ 又一，准結構 “方法，其令包含第-實施例、第二 201115196 實施例、帛-製作方法、及第二製作方法，综合上述，可 得知本發明係具有下列之優點： 1. 藉由該三維結構層之三維尺度變化，使得光波可更有效 率地被導入該波導層之内傳遞，且，該光柄辅助式之三 維結構波導耦合裝置可傳遞之光波長範圍，係相較於習 知的光栅輔助式波導耦合器來得更為寬廣。 2. 由於該輔助光栅之使用，可使得該三維結構層之材料折Forming at least one first substrate 221 to form an optical thumb structure 2 2 3, and a main limb A step (5)), and placing the amine on the film substrate 22; then, performing the reverse layer and the soil 22 on the reverse side Above the waveguide layer 12. Next, performing step (304) 12, J uses the film substrate 22 to form a three-dimensional structural layer 15 on the 201115196 of the waveguide layer 12; then *1, township (3〇5), the film-coated substrate 22 Removing from above the waveguide layer 12; and performing the step (306), using the at least one-plane-first mask 6 having at least a planar tapered pattern 61 to form the three-cone structure layer 15 into at least one three-dimensional structure 19. In the second manufacturing method, the first substrate, the # substrate 11 > the skin guide layer 12, the second substrate 221, and the three-dimensional structure layer 15 are the same, and will not be described here. Therefore, the inflammatory period is referred to in the tenth embodiment, and the third embodiment of the three-dimensional structure waveguide coupling device of the grating-assisted type is established. The auxiliary grating 4 is a grating-assisted three-dimensional structure waveguide coupling device located above the three-dimensional structural layer 15. Moreover, as described above, the flow of the first method of the grating-assisted three-dimensional structure waveguide surface-mounting device is called a music chart, and the steps are detailed (see the detailed step flow chart, and please also refer to the tenth person figure). And a side view of the phase I of the film having a grating structure, wherein the step (302) further comprises the following detailed steps: First, the step (3021) is performed to prepare the second substrate. Then, a bevel groove is formed on the first substrate 221. Step 1 (3〇23) is performed, and the grating structure 223 is formed on the inclined surface of the inclined groove 222. Then, the step (ship) is performed. Applying a compound 16 on the first substrate 221; and performing the step (3〇25), waiting for the fragmentation person & the mouthpiece 16 to be cured, wherein the ruthenium polymer is Polydidecylhydroxane (PDMS). 18 201115196 Further, as described above, the flow of the second fabrication method of the grating-assisted three-dimensional structure waveguide coupling device is referred to the twenty-second diagram, which is the step (304). Detailed step flow chart, and please also refer to the nineteenth system A schematic diagram of fabricating a three-dimensional structural layer on a waveguide layer by using a film-coated substrate having a grating structure, wherein step (304) further comprises the following detailed steps: First, 'execution step (continent), the substrate is aligned in an aligned manner 22 is placed on the waveguide layer 12; then, a step (3〇42) is performed to inject a third photosensitive material 18 into the groove between the film-coated substrate 22 and the waveguide layer 12; and 'execution step (3〇43) Waiting for the third photosensitive material. Finally, please refer to the twenty-third figure, which is a flow chart, wherein the step Mα ·, ·, the field step (306) further includes the following detailed steps: First, the 'execution step ( 3061), the second mask 6 is placed above the layer 15; then, the step (3〇62) is performed to expose the square; the two-dimensional structure layer 15 is set to be ashamed. Deriving the planar pyramid pattern 61; performing step (3063), L7 as and 'the at least 1 cone/mode such that the three-dimensional structural layer 15 becomes a two-quasi-conical structure 19. Thus, the three-dimensional structure waveguide is coupled through the three-dimensional structure The second gate of the device is 锃' as shown in the second figure and the second + Ai Guide _ people do not, the grating-assisted three-dimensional structure waveguide coupling device 1 is completed. The above-mentioned complete and clear connection has revealed the grating-assisted 'skin guide coupling device and its ancient soil ^ In addition, the quasi-structure "method, which includes the first embodiment, the second embodiment 201115196, the 帛-making method, and the second manufacturing method, is integrated into the above, and it can be seen that the present invention has the following advantages: 1. The three-dimensional scale change of the three-dimensional structural layer enables light waves to be more efficiently introduced into the waveguide layer, and the wavelength range of light that the light handle-assisted three-dimensional structure waveguide coupling device can transmit is compared with Conventional grating-assisted waveguide couplers are more widely available. 2. Due to the use of the auxiliary grating, the material of the three-dimensional structural layer can be folded
射係數，可不限定必須大於該波導層之材料折射係數， 即可得到良好的光耦合效果。 3. 該三維結構層可不受限於半導體製程之薄膜製程，而可 透過注膜之方式，將其製作成大尺寸（高度大於1〇微 米）大尺寸的二維結構層可與外部之光波傳遞裝置直接 連接。 4.透過該光柵輔助式之三維結構波導耦合裝置之第一種製 造方法，即可利用半導體之製程技術，製作出該輔助光 柵係形成於該波導層上方之光柵輔助式三維結構波導耦 穿置 而不需要特殊之製程技術或製造設備。 5·透過該光柵辅助式之三維結構波導耦合裝置之第二種製 方法即可利用半導體之製程技術，製作出該輔助光 成於該二維結構層上方之光柵輔助式三維結構波 導輕合裝置’而不需要特殊之製程技術或者製造設備。 上述之詳細說明係針對本發明之可行實施例之具體說， 20 201115196 明，惟該實施例並非用 離本發明技藝精神所為 案之專利範圍申。 以限制本發明之專利範®，凡未脫 之等效實施或變更，均應包含於本The coefficient of incidence may not be limited to be greater than the refractive index of the material of the waveguide layer, and a good optical coupling effect can be obtained. 3. The three-dimensional structural layer can be made into a thin film process of a semiconductor process, and can be formed into a large-sized (higher than 1 〇 micrometer) large-sized two-dimensional structural layer through a film injection method to transmit light waves with external light. The device is directly connected. 4. Through the first manufacturing method of the grating-assisted three-dimensional structure waveguide coupling device, the grating-assisted three-dimensional structure waveguide coupling of the auxiliary grating system formed on the waveguide layer can be fabricated by using the semiconductor process technology. No special process technology or manufacturing equipment is required. 5. The second method of the grating-assisted three-dimensional structure waveguide coupling device can utilize the semiconductor process technology to fabricate the grating-assisted three-dimensional structure waveguide light-synthesis device with the auxiliary light formed above the two-dimensional structure layer. 'No need for special process technology or manufacturing equipment. The above detailed description is directed to the specific embodiments of the present invention, and the scope of the invention is not limited by the scope of the invention. In order to limit the patents of the present invention, the equivalent implementation or modification of the invention shall be included in
【圖式簡單說明】 第一圖 $二圖 第三圖 第四圖 第五圖 第六圖與第七圖 第八圖 第九圖 第十圖 係一種光栅輔助式之三維結構波導輕 合裝置之第一實施例側視圖； 係光柵輔助式之三維結構波導耦合裝 置之第一實施例立體結構圖； 係光柵輔助式之三維結構波導耦合裝 置之第二實施例側視圖； 係一種光柵輔助式之三維結構波導耦 合裝置之第一製作方法流程圖； 係一第一光罩之俯視圖； 係於一波導層上製作一輔助光栅之製 程示意圖； 係將一第二基板製作為一注膜基板之 製程示意圖； 係注膜基板之底視圖； 係利用注膜基板於波導層之上製作一[Simple diagram of the drawing] First diagram $2, third diagram, fourth diagram, fifth diagram, sixth diagram, seventh diagram, eighth diagram, ninth diagram, tenth diagram, a grating-assisted three-dimensional structure waveguide light-synthesis device 1 is a side view of a first embodiment of a grating-assisted three-dimensional structure waveguide coupling device; a second embodiment of a grating-assisted three-dimensional structure waveguide coupling device; a grating-assisted type A flow chart of a first manufacturing method of a three-dimensional structure waveguide coupling device; a top view of a first photomask; a process diagram for fabricating an auxiliary grating on a waveguide layer; and a process for fabricating a second substrate as a film-injecting substrate Schematic; a bottom view of the film substrate; a film substrate is used to make a layer on the waveguide layer
三維結構層之示意圖； 係具有至少一平面錐狀圖形之—第 光罩之俯視圖； 21 201115196 第十二圖 係將三維結構層製作成至少一三維錐 狀結構之製程示意圖； 第十三圖 係步驟（202 )之詳細步驟流程圖； 第十四圖 係步驟（ 203 )之詳細步驟流程圖； 第十五圖 係步驟（ 205 )之詳細步驟流程圖； 第十六圖 係步驟（ 207 )之詳細步驟流程圖； 第十七圖 係光栅輔助式之三維結構波導耦合裝 置之第二製作方法流程圖； 第十八圖 係具有一光柵結構之注膜基板之側視 圖， 第十九圖 係利用具有光柵結構之注膜基板於波 導層之上製作一三維結構層之示意圖； 第二十圖 係光柵輔助式之三維結構波導耦合裝 置之第二實施例立體結構圖； 第二十一圖 係步驟（302 )之詳細步驟流程圖； 第二十二圖 係步驟（3 04 )之詳細步驟流程圖；及 第二十三圖 係步驟（306 )之詳細步驟流程圖。 22 201115196Schematic diagram of a three-dimensional structural layer; a plan view of a photomask having at least one planar pyramidal pattern; 21 201115196 The twelfth diagram is a schematic diagram of a process for fabricating a three-dimensional structural layer into at least one three-dimensional pyramidal structure; Detailed step flow chart of step (202); fourteenth step is a detailed step flow chart of step (203); the fifteenth figure is a detailed step flow chart of step (205); the sixteenth figure is step (207) Detailed step flow chart; Figure 17 is a flow chart of a second method for fabricating a grating-assisted three-dimensional structure waveguide coupling device; Figure 18 is a side view of a film-coated substrate having a grating structure, and the nineteenth image is utilized A schematic diagram of a three-dimensional structural layer formed on a waveguide layer with a grating structure; a twenty-dimensional diagram of a second embodiment of a grating-assisted three-dimensional structure waveguide coupling device; (302) detailed step flow chart; twenty-second figure is a detailed step flow chart of step (3 04); and twenty-third figure is detailed step (306) Detailed step flow chart. 22 201115196
【主要元件符號說明】 1 光柵輔助式之三維結構波導耦合裝置 11 第一基板 111 半導體層 112 絕緣層 12 波導層 14 第一感光材料 15 三維結構層 16 碎聚合物 17 第二感光材料 18 第三感光材料 19 三維錐狀結構 2 曝光光源 22 注膜基板 221 第二基板 222 斜面凹槽 223 光桃結構 3 第一光罩 31 光柵圖形 4 輔助光柵 6 第二光罩 61 平面錐狀圖形 23 201115196 201 〜207 方法步驟 2021 〜2025 方法步驟 2031〜2034 方法步驟 2051 〜2053 方法步驟 2071 〜2073 方法步驟 301 〜306 方法步驟 3021〜3025 方法步驟 • 3041〜3043 方法步驟 3061 〜3063 方法步驟 • 24[Main component symbol description] 1 Grating-assisted three-dimensional structure waveguide coupling device 11 First substrate 111 Semiconductor layer 112 Insulating layer 12 Waveguide layer 14 First photosensitive material 15 Three-dimensional structural layer 16 Broken polymer 17 Second photosensitive material 18 Third Photosensitive material 19 Three-dimensional tapered structure 2 Exposure light source 22 Film-implanted substrate 221 Second substrate 222 Bevel groove 223 Light peach structure 3 First mask 31 Raster pattern 4 Auxiliary grating 6 Second mask 61 Flat cone pattern 23 201115196 201 ~ 207 Method steps 2021 to 2025 Method steps 2031 to 2034 Method steps 2051 to 2053 Method steps 2071 to 2073 Method steps 301 to 306 Method steps 3021 to 3025 Method steps • 3041 to 3043 Method steps 3061 to 3063 Method steps • 24
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| TWI601940B (en) * | 2012-07-04 | 2017-10-11 | Ｖｅｇａ格里沙貝兩合公司 | Waveguide couplr and high-frequency module, fill-level radar and field device having the same |
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| TWI601940B (en) * | 2012-07-04 | 2017-10-11 | Ｖｅｇａ格里沙貝兩合公司 | Waveguide couplr and high-frequency module, fill-level radar and field device having the same |
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