201112206 uyouuoeTW 26130twf.doc/n 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種畫素的結構,且特別是有關於一 種有機發光二極體的晝素結構。 【先前技術】 隨著電子技術的進步’人們對於消費性電子產品在提供 視覺上的服務的要求也越來越南。不論是在傳統的電視 機’乃至於較為先進的個人電腦、行動電話等,對於顯示 的晝質都非常講究。現今最為人們所熟知的顯示面版,要 算是液晶顯示(liquid crystal display,LCD)面板了。然而, 在液晶顯示面板的技術的發展上雖已具有高度的成熟度, 但是,一些因為液晶材質所造成的先天限制,卻成為液晶 面板的發展瓶頸’例如’液晶顯示器的反應速度。也因此, 許多不同種類的顯示面板正被積極的研究開發,如有機發 光二極體(organic light emitting diode,OLED)顯示面板。 有機發光一極體顯示面板為一種自發光的顯示面 板’其具有高光亮度、高反應速度以及大視角等優點。此 外’主動式(active matrix,AM)的有機發光二極體顯示面板 為了可以實現其最好的表現度,通常採用低溫多晶矽(1〇w temperature polycrystalline silicon, LTPS)的製程來做為其 驅動電晶體,亦即一般所謂的薄膜電晶體(thin_fllm transistors,TFT)。這種低溫多晶石夕製程戶斤製作出來的電晶 201112206 0960068TW 26130twf.doc/n 體通常具有較大的電流骚動能力,更能有效 二極體這種顯示面板,並使其展現最高的畫質。有機發九 然而,由於這種低溫多晶石夕製程在製程上的㈣ 不易。因此,所製造出的薄膜電晶體的電性表數 較大的製程漂移,尤其是電晶體的臨界電壓__ v〇ltage)。社賴时’也造成了有機發光二極體面板在 顯示灰階或顏色上的不均勻,因此,許多關於 究分別被提出。 % 以下請參關1A’®丨场示f純術的有機發光二 極體畫素100的結構。此種習知有機發光二極體晝素ι〇〇 的結構包括作為Μ的電晶體SW1〜SW4、用以^動有機 發光二極體D1的電晶體Τ1、電容C1以及電容,並且 搭配資料線DT、掃描線S1〜S3。 、’ 並請同時參照圖1B,圖1B繪示圖1A繪示之習知技 術的有機發光二極體晝素的驅動時序圖。此驅動時序可以 分為三個㈣°其中’㈣期TA時,電晶體SW4、謂 被導通而使電晶體T1的閘極被預充電至系統電壓VDD。 在時期TB貝Ij關閉電晶體SW4,使之前被預充到系統電壓 VDD的電晶體T1的閘極開始放電,並放電至等於電晶體 T1以及有機發光二極體D1的臨界電壓的總和,並利用電 容ci儲存這個電壓。並且在時期Tc導通電晶體SW1及 關閉電晶體SW4,使資料線DT的資料透過電容ci傳輸 到電晶體T1上’並使有機發光二極體di發光。 此種習知技術雖可以降低有機發光二極體對上述的 201112206 uybUuexTW 26130twf.doc/n 薄膜電晶體的製程漂移的影響,但由於使用了過夕 體以及掃描線,不但具有較大的電路面積,二的電晶 上較為複雜,並不是一個很完善的作法。 。動動作 【發明内容】 有鑑於此,本發明提供一種晝素。 晶r製程條件差;== 降的問題;有機發光二極體發先均勻性下 本發明提供—種顯示面板,使用對薄膜 ,的電性不均勻有較高的免疫力的晝素^體的= 隨溫度變化而改變其表現。 —使,、、、員不面板不 本發明提供-種晝素的驅動方 薄膜電晶體的臨界電壓的心 對於 素。 们風度/示移有較尚的免疫力的畫 本發明提出一種晝素,包 ,。其中,有機發光二極體電:接及第二. 體的第一源/汲極電性遠挺吞士『連接至弟一電壓。電晶 -開闕電性連接在第二電 發光—極體的第二端。第 受控於第二掃描線。第 晶體的第二源/沒極間,並 汲極與電晶體的間極間,受二=連^在電晶體的第二源/ 性連接在資料線與第—電二第-2描線。第三開關電 於第二掃描線。此外 電谷相接端之間,受控 電谷電性連接至電晶體的間極, 201112206 0960068TW 26130twf.doc/n 第二電容則電性連接在第—電容與第〜 ;利】第一掃描線與第二掃描線交互導::關二:二藉 開關’便可以進,動書素開 -掃描線以及第二掃描線。而每固f-畫素、第 有機發光二極體、電晶體、第—電—旦”都包括第-關、第三開關以及第二電容。其二弟一開關、第二開 與第-電晶體電性連接,第—電容發光二極體 〜μ一…不貝竹琛兴弟一電容和第二齋, 扣亚且,第二電容電性連接在第1容與ί容相 此外,在上述所提的顯示面板中,其第—電壓間 描線分別電性連接至這些第—畲丢,m、掃插線及第 體’而第-開關電性連接在第一電晶;’41:第—電晶 -開關電性連接至在第一電晶體與第—―一電®間’第 :性連接至在第一資料線與第—電容和=二第三開關 a ,並且,第二電容電性連接在第一二各相接端之 提*的顯不面板中,盆第 3£:间。 〜掃描線分別電性連接至這些第—書素,用二掃插線及第 ^素。而在此顯示面板中的多數個資料來脚4這些第 乂些第-畫素’並且用以驅動這些第則電性連接 $是奎;由利用第-掃描線與第二掃描線匕值得-提 C +的第一開關、第二開 :v通或關閉 义些第一晝素。 關,進而驅動 本發明更提出-種晝素的驅動方法 其中所述的書素包括第表驅動書音 ―― 純括弟—開關、第二Μ、第-5思素。 第,電容、電晶體以及有機發光二ί體關、第 ‘二一.贯先’於第-時期導通第-開關及第:其驅動 閉弟二開關,並使電晶體的閘極端被預充;:開關且 兔,接著,於 201112206 uy〇uuo8TW 26130twf.doc/n 第二時期關閉第-開關並導通第二開關及第三開關 晶體及有機發光二倾上的跨壓被放電至纽界電壓;然 後’於第三關閉第—開關及第二開關及導通第三‘開 關,並提供資料線的電壓至晝素;最後,於第 ^ 第-開關並Μ第二開關及第三開關,使有機1 = 發光。 — 基於上述,本發明因採用兩組掃描線交互切換開關的 結構來驅動有機發光二極體的晝素及顯示面板,因此,可 以使此種有機發光二極體的晝素及顯示面板的發光效能, 不父薄膜電晶體的臨界電壓隨溫度變化而影響。並且,本 發明所提的晝素及顯示面板,使用較少的開關,節省畫素 的電路面積。 旦μ 為讓本發明之上述特徵和優點能更明顯易懂,下文特 舉較佳實施例,並配合所附圖式,作詳細說明如下。 【實施方式】 第一實施例: 以下針對本發明的有機發光二極體的晝素提出一實 施例加以說明,期使本領域具通常知識者,更能了解本發 明的精神。 請參照圖2Α,圖2Α繪示本發明之有機發光二極體的 晝素的一實施例。晝素200包括發光二極體D1(在此為有 機發光二極體)、電晶體DTFT、開關SW1〜開關SW3(此些 開關均由電晶體連接成開關的方式所構成)、電容Ci以及 201112206 0960068TW 26130twf.doc/u 電容C2。 其中的電晶體dtft第一源/没極電性連接至有機發 光一極體D1的陽極,有機發羌二極體D1的陰極則電性連 接至第一電壓(在本實施例為接地電壓GND)。開關 电性連接在第二電壓(在本實施例為系統電壓VDD)與電晶 體DTFT的第一源/及極間,並受控掃描線SCAN2。開關 SW2則電性連接在電晶體DTFT的第二源/汲極與閘極 間’並受控於掃描線SCAN卜開關SW3則電性連接在資 料線DT與電容C1間,並受控於掃描線SCAN2。而電容 ci電性連接至電晶體DTFT的閘極且電容C2電性連接在 電容C1與接地電壓GND間。 ^而關於本第一實施例所提的晝素2〇〇的作動方式,則 凊參照圖所繪示本發明之晝素的一實施例的驅動時序 圖。首先值得一提的是,在本實施例中,開關SW2、開關 SW1為控制訊號高準位時導通,而低準位時關閉。開關 SW3則為控制訊號低準位時導通,而高準位時關閉。另 =’開關SW3的動作則恰與開關SW1相反。本驅動時區 分為四個時期,在時期Η時,使掃描線SCAN1以及掃描 線SCAN2均為高準位,藉以導通開關sw2以及開關 SW1。如此,系統電壓VDD將可以經由開關SW1以及開 關SW2預充電到電晶體DTFT的閘極。 接著’在完成電晶體DTFT的預充電後,進入時期 ^^並使掃描線SCAN2轉態為低準位,維持掃描線SCAN1 在鬲準位,並藉以關閉開關SW1,且使開關SW2保持導 201112206 0960068TW 26130twf.d〇c/n 通。在此時期P2中’由於開關SWl已被關閉,因此提供 預充電的路徑已被關閉,而開關SW2保持導通,使得原本 被預充電到系統電壓VDD的電晶體DTFT的閘極開始放 電。這個放電動作使得電晶體DTFT以及有機發光二極體 D1逐漸關閉’也使得電晶體DTFT的閘極電壓放電到等於 電晶體DTFT以及有機發光二極體D1的臨界電壓的總和 才停止。 緊接著進入時期P3 ’此時則使掃描線SCAN1轉態為 低準位,維持掃描線SCAN2在低準位,並藉以關閉開關 SW1及開關SW2,且導通開關SW3。同時,開始由資料 線DT傳輸資料,並透過開關SW3的導通動作,將資料線 DT的資料傳輸到電容C1上。此時電容C2將儲存這個由 資料線DT傳送的資料,而電容C1則藉由推舉(b〇〇st)效 應,使電晶體DTFT的閘極上的電壓,由原本等於電晶體 DTFT以及有機發光二極體m的臨界電壓的總和,更被往 上推舉等於資料線DT所傳輸的資料的電壓值加上電晶體 DTFT以及有機發光二極體D1的臨界電壓的總和。並且, 電容C1將同時儲存這個電壓。 - 最後進入時期P4,此時則使掃描線SCAN2轉態為高 準位’維持掃描線SCAN1在低準位,並藉以導通開關 SW1 及關閉開關SW2以及開關SW3。此時系、統電壓VDD將致 使電曰曰體DTFT傳送電流至有機發光二極體D1上,並使 有機發光二極體D1發光。 综合上述動作可以清楚了解,當在有機發光二極體 201112206 0960068TW 26130twf.doc/n D1發光時,負責傳送驅動電流的電晶體DTFT的閘極保持 在h期P3中電谷C1所儲存的電晶體饥訂以及有機發光 二極體D1的臨界電壓的總和再加上資躲DT所傳輪的 資料的電壓值。若以數學式來表示,即如同式⑴所示: Vqate = Vdata + VTH + VT0 ⑴ 其中,Vgate為電晶體DTFT的閘極上的電壓,Vdata為資 料線DT所傳輸的資料的電壓,而Vth以及則分別為 電晶體DTFT以及有機發光二極體D1的臨界電壓。 又因為電晶體DTFT保持在飽和區,因此可以計算出 流經有機發光二極體D1的電流如同式(2)所示: ϊ〇ι - 2 KDm (Vgs_dtft - )2 = iKdtft (Vdata + Vra + VT〇 - V〇 ~ y (2) 其中,Idi為有機發光二極體D1上流過的電流,而vgs_dtft 為電晶體DTFT的閘極與源極上的跨壓,·yD則為有機發光 二極體D1導通時所造成的壓降,〖〇1^為電晶體DTFT的 電流常數。另外,式(2)可以更進一部改寫為式(3),如下所 示: ^ = (3) 由式(3)不難發現,流經過有機發光二極體D1的電流 與電晶體DTFT的臨界電壓γΤΗ並沒有關係,也就是說, 利用這種晝素200所點亮的有機發光二極體D1的亮度, 與電晶體DTFT的臨界電壓vTH沒有關係。 值得一提的是,由於有機發光二極體的臨界面壓會隨 201112206 0960068TW 26130twf.doc/n 著時間增加’進而使得有機發光二極體的發光效率及亮度 劣化,而本第一實施例所提供一個如式(3)所示的迴授補 償。由式(3)可以得知電晶體]311^將會產生更大的電流以 補償上述亮度劣化的現象,使有機發光二極體的亮度均勻 的上昇。 以下將針對上述的第一實施例提出模擬的結果,並佐 以圖示,來証明上述的推論是為正確。201112206 uyouuoeTW 26130twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a structure of a pixel, and more particularly to a halogen structure of an organic light-emitting diode. [Prior Art] With the advancement of electronic technology, people's requirements for providing visual services for consumer electronic products are becoming more and more south. Whether it is on a traditional TV, or even a more advanced personal computer, mobile phone, etc., it is very particular about the enamel of the display. The most popular display panel today is a liquid crystal display (LCD) panel. However, although the development of the technology of the liquid crystal display panel has been highly mature, some of the inherent limitations caused by the liquid crystal material have become a bottleneck for the development of the liquid crystal panel, for example, the reaction speed of the liquid crystal display. Therefore, many different types of display panels are being actively researched and developed, such as organic light emitting diode (OLED) display panels. The organic light-emitting diode display panel is a self-luminous display panel which has advantages of high luminance, high reaction speed, and large viewing angle. In addition, the 'active matrix (AM) organic light-emitting diode display panel is usually made of a low-temperature polycrystalline silicon (LTPS) process in order to achieve its best performance. Crystals, also known as thin-film transistors (TFT). This kind of low-temperature polycrystalline shovel process is made of the electric crystal 201112206 0960068TW 26130twf.doc/n body, which usually has a large current turbulence, and is more effective in the display panel of the diode and makes it the highest. Picture quality. Organic hair nine However, due to this low temperature polycrystalline stone process in the process of (four) is not easy. Therefore, the manufactured thin film transistor has a large number of process drifts, especially the critical voltage of the transistor __v〇ltage). The social time also caused unevenness in the display of gray scales or colors of the organic light-emitting diode panels. Therefore, many related studies were proposed separately. % Please refer to the structure of the organic light-emitting diode 100 in the 1A'® market. The structure of the conventional organic light-emitting diode 昼 〇〇 〇〇 includes the transistors SW1 to SW4 as Μ, the transistor Τ1, the capacitor C1 and the capacitor for moving the organic light-emitting diode D1, and is matched with the data line. DT, scan lines S1 to S3. Referring to FIG. 1B at the same time, FIG. 1B is a timing chart showing the driving of the organic light-emitting diode of the prior art shown in FIG. 1A. This driving timing can be divided into three (four) degrees. In the case of 'fourth phase TA', the transistor SW4 is turned on to cause the gate of the transistor T1 to be precharged to the system voltage VDD. During the period TB, Ij turns off the transistor SW4, causing the gate of the transistor T1 that was previously precharged to the system voltage VDD to start discharging, and discharging to a sum equal to the threshold voltage of the transistor T1 and the organic light-emitting diode D1, and This voltage is stored using a capacitor ci. Further, during the period Tc, the transistor SW1 is turned on and the transistor SW4 is turned off, so that the data of the data line DT is transmitted through the capacitor ci to the transistor T1 and the organic light-emitting diode di is illuminated. Although such a conventional technique can reduce the influence of the organic light-emitting diode on the process drift of the above-mentioned 201112206 uybUuexTW 26130 twf.doc/n thin film transistor, it has a large circuit area due to the use of the celestial body and the scanning line. The second crystal is more complicated and is not a perfect method. . Motions [Invention] In view of the above, the present invention provides a halogen. Crystallization process conditions are poor; == drop problem; organic light-emitting diodes first uniformity, the present invention provides a display panel, which uses a high immunity to the film, the electrical immunity is high = Change its performance as temperature changes. - Making,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The art of the mandarin/shift has a more immune immunity. The present invention proposes a halogen, a package. Among them, the organic light-emitting diodes are connected to the second body. The first source/dip pole is electrically connected to the younger one. The electro-crystal is electrically connected to the second end of the second electro-optical body. The second is controlled by the second scan line. The second source/no pole of the first crystal, and the interpole between the drain and the transistor, are connected to the second source/sex of the transistor in the data line and the second line. The third switch is electrically coupled to the second scan line. In addition, between the junctions of the electric valleys, the controlled electric valley is electrically connected to the interpole of the transistor, and the second capacitor is electrically connected to the first capacitor and the first capacitor. The line and the second scan line interact with each other:: off two: two borrowing switch 'can enter, move the open-scan line and the second scan line. Each solid f-pixel, the second organic light emitting diode, the transistor, and the first electrical circuit include a first-off switch, a third switch, and a second capacitor. The electrical connection of the transistor, the first-capacitance light-emitting diode ~ μ a... not a bamboo and a younger capacitor, and a second fast, the second capacitor is electrically connected in the first capacity and the In the above display panel, the first-voltage line is electrically connected to the first, the m, the sweep line and the first body, and the first switch is electrically connected to the first transistor; : the first - the crystal - switch is electrically connected to the first transistor and the first - the first connection between the first data line and the first capacitance and the second switch a, and the The two capacitors are electrically connected to the display panel of the first two phases, and the third panel of the basin is connected. The scan lines are electrically connected to the first book, respectively, and the second sweep wire and the second In the display panel, most of the data in the panel is the fourth of the first-pixels of the foot 4 and is used to drive these first electrical connections. The first scan line and the second scan line are worthwhile - the first switch of the C + , the second switch: the v pass or the turn off the first first element. Off, and thus drive the invention further proposes - the drive method of the species The book mentioned above includes the table-driven book sounds - the purely brother-switch, the second one, the fifth-thin. The first, the capacitor, the transistor and the organic light-emitting body, the second one. First, the first switch is turned on in the first period and the second switch is turned on, and the gate of the transistor is precharged; the switch and the rabbit, then, at 201112206 uy〇uuo8TW 26130twf.doc/n second During the period, the first switch is turned off and the second switch and the third switch crystal are turned on, and the voltage across the organic light-emitting diode is discharged to the button voltage; then the third switch is turned off and the second switch is turned on and the third switch is turned on. And providing the voltage of the data line to the halogen; finally, the second switch and the third switch are connected to the second switch and the third switch to make the organic 1 = light. - Based on the above, the present invention uses two sets of scan line interactive switch Structure to drive the halogen and display surface of the organic light-emitting diode Therefore, the halogen of the organic light-emitting diode and the light-emitting efficiency of the display panel can be made, and the threshold voltage of the parent thin film transistor is affected by the temperature change. Moreover, the halogen and the display panel of the present invention are used. The above-mentioned features and advantages of the present invention are more apparent and easy to understand. The following description of the preferred embodiments and the accompanying drawings will be described in detail below. BEST MODE FOR CARRYING OUT THE INVENTION First Embodiment: Hereinafter, an embodiment of the organic light-emitting diode of the present invention will be described, and the spirit of the present invention will be better understood by those skilled in the art. 2A shows an embodiment of the halogen of the organic light-emitting diode of the present invention. The halogen 200 includes a light-emitting diode D1 (here, an organic light-emitting diode), a transistor DTFT, and a switch SW1 to a switch SW3 ( These switches are made up of transistors connected into switches), capacitors Ci and 201112206 0960068TW 26130twf.doc/u capacitor C2. The first source of the transistor dtft is electrically connected to the anode of the organic light-emitting diode D1, and the cathode of the organic hairpin diode D1 is electrically connected to the first voltage (in this embodiment, the ground voltage GND) ). The switch is electrically connected between the second voltage (system voltage VDD in this embodiment) and the first source/pole of the electromorph DTFT, and controls the scan line SCAN2. The switch SW2 is electrically connected between the second source/drain and the gate of the transistor DTFT and controlled by the scan line SCAN, and the switch SW3 is electrically connected between the data line DT and the capacitor C1, and is controlled by scanning. Line SCAN2. The capacitor ci is electrically connected to the gate of the transistor DTFT and the capacitor C2 is electrically connected between the capacitor C1 and the ground voltage GND. With regard to the operation mode of the pixel 2 所 proposed in the first embodiment, a driving timing chart of an embodiment of the pixel of the present invention is shown with reference to the drawings. First of all, it should be noted that in the embodiment, the switch SW2 and the switch SW1 are turned on when the control signal is high, and are turned off when the level is low. Switch SW3 is turned on when the control signal is low level and turned off when the control level is low. The other =' switch SW3 operates exactly opposite the switch SW1. The driving time zone is divided into four periods. During the period Η, the scanning line SCAN1 and the scanning line SCAN2 are both at a high level, thereby turning on the switch sw2 and the switch SW1. As such, the system voltage VDD will be precharged to the gate of the transistor DTFT via switch SW1 and switch SW2. Then, after completing the pre-charging of the transistor DTFT, enter the period ^^ and turn the scan line SCAN2 to the low level, maintain the scan line SCAN1 at the 鬲 level, and thereby close the switch SW1, and keep the switch SW2 to guide 201112206 0960068TW 26130twf.d〇c/n pass. During this period P2, since the switch SW1 has been turned off, the path for providing precharge has been turned off, and the switch SW2 remains turned on, so that the gate of the transistor DTFT which was originally precharged to the system voltage VDD starts to be discharged. This discharge action causes the transistor DTFT and the organic light-emitting diode D1 to be gradually turned off. Also, the gate voltage of the transistor DTFT is discharged until the sum of the threshold voltages of the transistor DTFT and the organic light-emitting diode D1 is stopped. Immediately after entering the period P3', the scan line SCAN1 is turned to the low level, the scan line SCAN2 is maintained at the low level, and the switch SW1 and the switch SW2 are turned off, and the switch SW3 is turned on. At the same time, the data is transmitted from the data line DT, and the data of the data line DT is transmitted to the capacitor C1 through the conduction operation of the switch SW3. At this time, the capacitor C2 will store the data transmitted by the data line DT, and the capacitor C1 will cause the voltage on the gate of the transistor DTFT to be equal to the transistor DTFT and the organic light-emitting diode by the push (b〇〇st) effect. The sum of the threshold voltages of the polar bodies m is further referred to as the sum of the voltage values of the data transmitted by the data line DT plus the threshold voltages of the transistor DTFT and the organic light-emitting diode D1. Also, capacitor C1 will store this voltage at the same time. - Finally enters the period P4, at which time the scan line SCAN2 is turned to the high level 'the scan line SCAN1 is maintained at the low level, and the switch SW1 and the switch SW2 and the switch SW3 are turned on. At this time, the system voltage VDD causes the electric body DTFT to transmit a current to the organic light-emitting diode D1, and causes the organic light-emitting diode D1 to emit light. It can be clearly understood from the above actions that when the organic light emitting diode 201112206 0960068 TW 26130 twf.doc/n D1 emits light, the gate of the transistor DTFT responsible for transmitting the driving current is kept in the transistor stored in the valley P1 in the h phase P3. The sum of the threshold voltages of the hunger and the organic light-emitting diode D1 is added to the voltage value of the data of the wheel transmitted by the DT. If expressed in mathematical formula, it is as shown in equation (1): Vqate = Vdata + VTH + VT0 (1) where Vgate is the voltage on the gate of the transistor DTFT, and Vdata is the voltage of the data transmitted by the data line DT, and Vth and Then, the threshold voltages of the transistor DTFT and the organic light-emitting diode D1 are respectively. Since the transistor DTFT is kept in the saturation region, the current flowing through the organic light-emitting diode D1 can be calculated as shown in the equation (2): ϊ〇ι - 2 KDm (Vgs_dtft - ) 2 = iKdtft (Vdata + Vra + VT〇- V〇~ y (2) where Idi is the current flowing through the organic light-emitting diode D1, and vgs_dtft is the voltage across the gate and source of the transistor DTFT, and yD is the organic light-emitting diode When D1 is turned on, the voltage drop caused by 11^ is the current constant of the transistor DTFT. In addition, the formula (2) can be further rewritten into the formula (3) as follows: ^ = (3) 3) It is not difficult to find that the current flowing through the organic light-emitting diode D1 has no relationship with the threshold voltage γΤΗ of the transistor DTFT, that is, the brightness of the organic light-emitting diode D1 illuminated by the halogen element 200. It has nothing to do with the threshold voltage vTH of the transistor DTFT. It is worth mentioning that since the critical surface voltage of the organic light-emitting diode increases with the time of 201112206 0960068TW 26130twf.doc/n, the light emission of the organic light-emitting diode is further increased. Efficiency and brightness are degraded, and the first embodiment provides a method (3) Feedback compensation. It can be known from equation (3) that the transistor 311^ will generate a larger current to compensate for the above-mentioned phenomenon of luminance degradation, so that the brightness of the organic light-emitting diode is uniformly increased. The first embodiment presents the results of the simulation and is accompanied by an illustration to prove that the above inference is correct.
其中’所選擇魏動的有機發光二歸D1的面積為 192卿& ’而其寄生電容為MnF/cm2,資料線DT所傳輸 的資料電壓vDATA為3V,有機發光二極體Dl與電晶體 DTFT的臨界電壓總和為ντΗ+ντ〇 = 。Among them, the area of the organic light-emitting diode D1 of the selected Weidong is 192 qing & 'the parasitic capacitance is MnF/cm2, and the data voltage transmitted by the data line DT is vV 3V, the organic light-emitting diode D1 and the transistor The sum of the threshold voltages of the DTFT is ντΗ+ντ〇=.
請麥照圖2C Μ ι、.'日不巷日日體JDriFT的閘極、源;j 以及,極輕的模擬結果,其中的曲線211〜213分別代: 第一 K施例中所述之驅動時序的四個時期Η〜的電/ 值。曲線211輕晶體DTFT的汲極的電壓波形,曲線 為電晶體D TF T的閘極的電壓波形,且曲線2 i 3為電 DTFT的源極的電壓波形。請注意在時期p2結束時 體DTFT日的閘極的電壓dvi放電到約等於有機發光二極; D1與電晶體DTFT的臨界電麼總和為Vth+Vt〇 = 2v。 士而在時期時,也就是在有機發光二極體⑴^ ^•,電晶體的間極與源極的電麼差_幾 ^ 變,而這個電塵差dV2也幾乎等於資料線dt上傳輸^ 二電反:Vda^3V(此時電壓差_❾準確值應該等; VDATA+VTCrVD),與上述的推論相符合。 11 201112206 0960068TW 26 J 30twf,doc/n 另外,請參照圖2D,圖2D繪示第〜每价^ 線、掃描線與有機發光二極體的陽極電‘: 果。其中,曲線221代表掃描線SCAN2的擬結 線223為代表資料線DT的電壓變化,曲線^二曰^曲 掃描線SCAN1的電壓變化,而曲線222則、疋表不 光二極體D1的陽極的電壓變化。 、尺表不有機發 請同時參照圖2E,圖2E繪示圖2D的曲续— & 入時期Η時的局部放大波形圖。其中的曲線:^ 當電晶體DTFT的臨界電壓Vth漂移_G33 —= 一極體Dl的陽極電壓波形。曲線222 3符车木X “ 腿的臨界電壓VTH漂移+0.33V時,有機發=^曰曰〇體Please take a picture of the gates and sources of the Japanese JDriFT; j and the extremely light simulation results, in which the curves are shown in the first K example. Drive the timing of the four periods Η ~ the electricity / value. Curve 211 The voltage waveform of the drain of the light crystal DTFT, the curve is the voltage waveform of the gate of the transistor D TF T , and the curve 2 i 3 is the voltage waveform of the source of the electric DTFT. Note that at the end of the period p2, the voltage dvi of the gate of the bulk DTFT is discharged to be approximately equal to the organic light-emitting diode; the sum of the critical electric power of D1 and the transistor DTFT is Vth+Vt〇 = 2v. In the period, that is, in the organic light-emitting diode (1)^^•, the difference between the polarity of the transistor and the source is _ a few changes, and this electric dust difference dV2 is also almost equal to the transmission on the data line dt. ^ Two electric reverse: Vda^3V (when the voltage difference _❾ accurate value should be equal; VDATA+VTCrVD), in line with the above inference. 11 201112206 0960068TW 26 J 30twf, doc / n In addition, please refer to FIG. 2D, FIG. 2D shows the anode electric power of the first to the price line, the scanning line and the organic light emitting diode. Wherein, the curve 221 represents that the pseudo-connection line 223 of the scan line SCAN2 represents the voltage change of the data line DT, the voltage of the curve 曰2 曰 扫描 scan line SCAN1, and the curve 222, the voltage of the anode of the dipole diode D1 Variety. The meter is not organic. Please refer to FIG. 2E at the same time. FIG. 2E is a partial enlarged waveform diagram of the song of FIG. 2D. Among them: ^ When the threshold voltage Vth of the transistor DTFT drifts _G33 - = the anode voltage waveform of the one-pole body D1. Curve 222 3 符车木X" When the threshold voltage of the leg VTH drifts +0.33V, organic hair = ^ 曰曰〇 body
壓波形,而曲線222_3代表當電晶㈣ 界電壓VTH不漂移時的電壓波形。 的I 此外,有機發光二極體D1的陽極電壓隨電曰 的臨界電壓VTH漂移所產生的錯誤率ER : - DTFT 式(4)所示: °τ昇方式如下 ER = ^(AV^ = ±0.33V) - VA (ΔΥτ)τ =〇γ) vA(Avra =δνΓ·- (4) 其中的VA為有機發光二極體D1的陽極 = ±〇.33V)則疋代表在電晶體Dtft lThe waveform is pressed, and the curve 222_3 represents a voltage waveform when the electric (four) boundary voltage VTH does not drift. In addition, the error rate of the anode voltage of the organic light-emitting diode D1 drifts with the threshold voltage VTH of the power ER: - DTFT Equation (4): °τ is as follows: ER = ^(AV^ = ± 0.33V) - VA (ΔΥτ)τ =〇γ) vA(Avra =δνΓ·- (4) where VA is the anode of organic light-emitting diode D1 = ±〇.33V) then 疋 represents the transistor Dtft l
Vth漂移了正或負〇·33V時的有機發光二極體D 壓’而vA队=〇 v)則代表在電晶體DTFT的臨界電電Vth drifts the positive or negative 〇·33V organic light-emitting diode D voltage' while vA team =〇 v) represents the critical electric current in the transistor DTFT
TH 12 201112206 0960068TW 26130twf.d〇c/n 沒有漂移時时機發光二極體D1的陽極電壓。 配合圖2E以及式(4),便可以計算得到在此第一實施 例中所產生的錯誤率介於〇 28%〜_〇 33%之間。此計算出 來的錯料非常的小,也就是代表之前所推論的利用Ϊ素 0所點儿的有機發光二極體的亮度,與電晶體Dtft 的臨界電壓VTH關係甚小,而可以被忽略。 第二實施例: 在此則提出一種以晝素200所建構成的顯示面板的實 施例二來說明晝素在整個顯示面板上的作動情形。 凊參照圖3’圖3繪示本發明之顯示面板的一實施例。 在顯示面板300動作時,先針對配置到畫素310的掃描線 S士1 S2.4整準彳立,並使其如同第—實施例中所說明的驅動 π序開始動作(個別驅動時序如同第—實施例中之說明,在 此不再重述)。並且分別利用資料線D1〜D3點亮各個畫素 =〇在'纟σ束了點壳晝素310的四個時期後,轉使用配置到 畫素32〇 =掃描線S3、S4調整準位,並驅動晝素320。如 f依序重魏行驅動的動作,便可以完成驅動整個顯示面 板 300 〇 第三實施例: ^本發明更提出一種驅動方式的實施例,使本領域具通 $知識者更能了解本發明所提之晝素的驅動方式。 請參照圖4,圖4繪示本發明之晝素的驅動方法 ^一二轭例。並請同時參照圖2A,其步驟包括:首先,於 弟一時期導通開關SW1及開關SW2 (剛),使電晶體 13 201112206 0960068TW 26130twf.doc/n DTFT及有機發光二極體D1被預充電,並且關閉開關 SW3 ’以切斷資料線與畫素2〇〇的連接;然後,於第二時 期關閉開關SW1並導通開關SW2,使電晶體DTFT及有 機發光一極體D1上的跨壓被放電至等於其臨界電壓 (S420),接著’於第三時期關閉開關SW2及開關SW1,I 提供資料至畫素200(S430),此時由於開關SW3被導通, 因此資料線DT上的資料可以傳輸至晝素2〇〇 ;最後,於 第四時期導通開關SW1並關閉開關SW2,點亮有機發光 二極體D1(S440),並同時關閉開關SW3,進而使資料線 DT上的資料不會影響到晝素2〇〇的發光亮度。 、 第四實施例: 最後再針對本發明所提出之晝素再舉另一個實施 例,來說明本發明的晝素所可能的另一種結構。 圖j、‘a示本發明之晝素的另一實施例。請參照圖5, 圖5緣示的晝素5〇〇與第一實施例中的畫素2〇〇不同點在 於開關SW3纟N型的薄膜電晶體所構成,而非晝素2〇〇 中的開關SW3為由p型的薄膜電晶體所構成。另外,為 了使晝素20G與晝素5〇〇的驅動方式相同,特別增加一個 反閘INV1作為處理開關SW3的控制訊號,如此,晝素獅 ^了一實施例中所說明的驅動時序來作動,與晝 素200具有相同功效。 機發2此=^提的是,本發明所提的實施例中均以有 n另外财—種大分子 '° ' 發光二極體(P〇1ymer light emitting diode, 201112206 0960068TW 26130twf.doc/n PLED) ’也適合使用於此種晝素。 兩組的掃描線所組合出來的四個驅動時期:曰:: 使有機發光二極體的發光亮度不受驅動電曰曰 ,了以TH 12 201112206 0960068TW 26130twf.d〇c/n The anode voltage of the LED D1 when there is no drift. With reference to Fig. 2E and equation (4), it can be calculated that the error rate generated in the first embodiment is between 〇28%~_〇 33%. The calculated error material is very small, that is, the brightness of the organic light-emitting diode which is inferred from the previous use of the halogen 0, which has little relationship with the threshold voltage VTH of the transistor Dtft, and can be ignored. SECOND EMBODIMENT: Here, a second embodiment of a display panel constructed of a halogen element 200 is proposed to illustrate the operation of a pixel on the entire display panel. An embodiment of a display panel of the present invention is illustrated with reference to FIG. 3'. When the display panel 300 is operated, the scanning line S1S2.4 arranged to the pixel 310 is first erected, and the driving π sequence is started as described in the first embodiment (the individual driving timing is like The description in the first embodiment will not be repeated here. And each of the pixels is illuminated by the data lines D1 to D3 = 〇 after the four periods of the 纟 束 点 昼 昼 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 310 And drive the Alizarin 320. The third embodiment can be completed by driving the entire display panel 300. The present invention further provides an embodiment of the driving method, so that the person skilled in the art can better understand the present invention. The driving method of the mentioned vegan. Please refer to FIG. 4. FIG. 4 is a diagram showing a driving method of the halogen of the present invention. Referring to FIG. 2A at the same time, the steps include: first, turning on the switch SW1 and the switch SW2 (just) during the period of the brother, so that the transistor 13 201112206 0960068 TW 26130 twf.doc/n DTFT and the organic light emitting diode D1 are precharged, and The switch SW3' is turned off to cut off the connection between the data line and the pixel 2; then, the switch SW1 is turned off and the switch SW2 is turned on in the second period, so that the voltage across the transistor DTFT and the organic light-emitting body D1 is discharged to Equal to its threshold voltage (S420), then 'close the switch SW2 and switch SW1 in the third period, I provides data to the pixel 200 (S430), at this time, since the switch SW3 is turned on, the data on the data line DT can be transmitted to Finally, in the fourth period, the switch SW1 is turned on and the switch SW2 is turned off, the organic light-emitting diode D1 is turned on (S440), and the switch SW3 is turned off at the same time, so that the data on the data line DT is not affected. The brightness of the halogen 2 〇〇. Fourth Embodiment: Finally, another embodiment of the present invention will be described with reference to another embodiment of the present invention. Figure j, 'a shows another embodiment of the pixel of the present invention. Referring to FIG. 5, the pixel 5 缘 shown in FIG. 5 is different from the pixel 2 第一 in the first embodiment in that the switch SW3 纟 N type thin film transistor is formed, instead of the pixel 2 〇〇 The switch SW3 is composed of a p-type thin film transistor. In addition, in order to drive the halogen 20G and the halogen 5〇〇 in the same manner, a reverse gate INV1 is additionally added as the control signal of the processing switch SW3, so that the driving timing described in the embodiment is activated. It has the same effect as Alizarin 200. In the embodiment of the present invention, there are n additional financial-type macromolecule '°' light-emitting diodes (P〇1ymer light emitting diode, 201112206 0960068TW 26130twf.doc/n PLED) 'is also suitable for use in such halogens. The four driving periods combined by the scanning lines of the two groups: 曰:: The brightness of the organic light-emitting diode is not driven,
:移:影響。較之習知技術更簡單,且需要7=廢 件,有效的減低生產成本。 足夕的電路7L ,財發明已以較佳實施例揭露如上 限定本發明,任何所屬技術 ^、亚非用以 脫離本發明之精神和範_,當可者,在不 為準。 田祝俊附之申睛專利範圍所界定者 【圖式簡單說明】 Q t Γ W知技術的有機發光二極_書+处Μ 圖1Β繪示圖1Α绔干夕^ _脰町旦言結構 體畫 素的驅動時序圖。σ技術的有機發光二極 圖2Α緣示本發明之有機發光二極 圖2Β 例 體的晝素的一實施 圖。 日示本發明之晝素的—實施例的驅動時序 圖2C綠示雷曰μ 的模擬結果。日0 — TFT的閘極、祕以歧極電壓 圖2D 1 會不第一實施例中之 資料線、 掃描線與有機發 15 201112206 0960068TW 26 \ 30twf.d〇c/n 光二極體的陽極電壓變化的模擬結果。 P4時的局部 圖2E繪示圖2D的曲線222在進入時期 放大波形圖。 圖3繪示本發明之顯示面板的—實施例。 圖4繪示本發明之晝素的驅動方法的一實施例。 圖5繪示本發明之晝素的另一實施例。 【主要元件符號說明】 100、200、500 :晝素 _ 300 :顯示面板 211、212、213、221、222、223、221」、222—2、222_3 : 曲線 S410〜S440 ··步驟 SW1〜SW4 :開關 Cl、C2 ··電容 S1 〜S3、SCAN1、SCAN2 :掃描線 DT :資料線 φ: Shift: Impact. It is simpler than the prior art and requires 7 = waste to effectively reduce production costs. The present invention is defined by the preferred embodiment of the present invention. The present invention is not limited to the spirit and scope of the present invention. Tian Zhujun's application of the patent scope of the application of the eye [simplified description] Q t Γ W know the organic light-emitting diodes of the technology _ book + at the end of the map Figure 1 Β Figure 1 Α绔 dry ^ ^ _ 脰 旦 旦 旦 结构 结构 结构The driving timing diagram of the prime. The organic light-emitting diode of the σ technique is shown in Fig. 2. The organic light-emitting diode of the present invention is shown in Fig. 2A. The driving timing of the embodiment of the present invention is shown in Fig. 2C. Day 0 — TFT gate and secret voltage. Figure 2D 1 will not be the data line, scan line and organic hair in the first embodiment. 201112206 0960068TW 26 \ 30twf.d〇c/n The anode voltage of the photodiode The simulation results of the change. Part of P4 Figure 2E shows the enlarged waveform of curve 222 of Figure 2D during the entry period. Figure 3 illustrates an embodiment of a display panel of the present invention. Fig. 4 is a view showing an embodiment of a driving method of the halogen of the present invention. Figure 5 illustrates another embodiment of the halogen of the present invention. [Description of main component symbols] 100, 200, 500: Alizarin_300: Display panels 211, 212, 213, 221, 222, 223, 221", 222-2, 222_3: Curves S410 to S440 · Steps SW1 to SW4 :Switch Cl, C2 ··capacitors S1 to S3, SCAN1, SCAN2: scan line DT: data line φ
Tl、DTFT :電晶體 D1 :發光二極體 VDD :系統電壓 GND :接地電壓 ΤΑ、TB、TC、P1 〜P4 :時期 16Tl, DTFT: transistor D1: light-emitting diode VDD: system voltage GND: ground voltage ΤΑ, TB, TC, P1 ~ P4: period 16