TW201105715A - Resin composition for sealing optical semiconductor - Google Patents

Resin composition for sealing optical semiconductor Download PDF

Info

Publication number
TW201105715A
TW201105715A TW099118393A TW99118393A TW201105715A TW 201105715 A TW201105715 A TW 201105715A TW 099118393 A TW099118393 A TW 099118393A TW 99118393 A TW99118393 A TW 99118393A TW 201105715 A TW201105715 A TW 201105715A
Authority
TW
Taiwan
Prior art keywords
mass
group
parts
resin composition
sealing
Prior art date
Application number
TW099118393A
Other languages
Chinese (zh)
Other versions
TWI465487B (en
Inventor
Manabu Ueno
Hayato Tanaka
Tsutomu Kashiwagi
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW201105715A publication Critical patent/TW201105715A/en
Application granted granted Critical
Publication of TWI465487B publication Critical patent/TWI465487B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22Di-epoxy compounds
    • C08G59/30Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
    • C08G59/306Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/01Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/014Stabilisers against oxidation, heat, light or ozone
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0008Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/005Stabilisers against oxidation, heat, light, ozone
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/13Phenols; Phenolates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/17Amines; Quaternary ammonium compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/49Phosphorus-containing compounds
    • C08K5/50Phosphorus bound to carbon only
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/10Materials in mouldable or extrudable form for sealing or packing joints or covers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Epoxy Resins (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

An epoxy resin for sealing optical semiconductor device has excellent heat resistance, light resistance and mainly crack resistance. The resin for sealing optical semiconductor device of this invention includes following component (A), component (B) and component (C): (A) a silicone modified epoxy compound having two epoxy group or more in one molecular represented by following formula (1), and a dispersion degree is in 1.0 to 1.2 (R1 is independently C1-10 substituent or unsubstituent one valence hydrocarbon group, R2 is a group represented by following formula (2) or formula (3), a, b are more than one integer selected from integers of 0 to 20) (B) a harden agent (C) a harden catalyst.

Description

201105715 34693p;f 六、發明說明: 【發明所屬之技術領域】 本發明關於一種用來密封光半導體元件,對耐熱試驗 優異並且特別是财龜裂性優異的石夕_ (silicone)改質環氧 樹脂組成物。 【先前技術】 以往,用來密封光半導體元件的光半導體元件密封樹 脂廣泛地使用透明環氧樹脂組成物。這種光半導體密封用 環氧樹脂組成物的成分通常含有脂環族環氧樹脂、硬化劑 和硬化催化劑,藉由利用洗鑄成形(casting molding)、轉 移成形(transfer molding)等成形方法,使所述光半導體 密封用環氧樹脂組成物流入到配置著光半導體元件的模具 中並硬化’而將光半導體元件密封(專利文獻1、專利文 獻2)。 但疋’近來隨著藍色發光二極體(light_emitting diode,LED)、白色LED的亮度、功率越來越高,使用常 規的透明環氧樹脂加以密封的LED元件出現隨著時間經 過因波長較短的藍色光或者紫外線而變色(黃變 (yellowing))的問題。而且吸水率高、耐濕耐久性差等問 題也被指出。 因此,本領域技術人員也提出了一種光半導體元件的 被服保護用樹脂組成物,這種光半導體元件的被覆保護用 樹脂組成物包含:一分子中含有至少兩個和siH基具有反 應性的碳-碳雙鍵的有機化合物或矽_樹脂,一分子中含有 6 201105715 34693pif 至少兩個SiH基的矽化合物,以及氫化矽烷化催化劑 (hydrosilylation catalyst)(專利文獻 3、專利文獻 4) 0 但是,這種矽酮系的硬化物存在下述缺點:如果要改 良它的耐龜裂性,則通常硬化物表面會殘留黏性(tack), 容易附著灰塵,從而損害光的穿透性。為了解決這些問題, 本領域技術人員提出了將高硬度矽酮樹脂用於保護被覆用 途(專利文獻5、專利文獻6)。但是,將發光元件配置在 陶瓷(ceramic)以及/或者塑膠(plastic)殼體内,並用矽 酮樹脂將此殼體内部填充的箱式(case type)的發光半導 體裝置出現了下述問題,即因為這些高硬度矽酮樹脂的強 韌性、黏著性不足,所以在_4〇。(:〜12〇^:下的熱衝擊試驗 中,矽酮樹脂從殼體的陶瓷或塑膠上剝離,或者產生龜裂 等。 、 另外,作為具有彌補這些缺點的可能性的組成物,提 出了 一種包含環氧樹脂與石夕酮樹脂的組成物(專利文獻 7、專利文獻8),但是這種組成物也存在黏著力不足或者 f光劣化而變色的問題。此外,為了提高樹脂的強度提 ,耐紫外線特性,提出了利用陽離子硬化催化劑來使具有 環氧基以及/或者氧雜環丁基(oxetanylgr〇up)的矽氧烷化 合物(siloxane compound )與矽倍半氧烷化合物 (silsesquioxane compound )硬化的方法(專利文獻9 ),但 是存在由所使用的陽離子硬化催化劑產生的鑌離子 (onium ion)等引起腐蝕以及著色等問題。另外,提出了 一種並用矽倍半氧烷化合物與氫化環氧樹脂的B階段 201105715 34693pif (B-Stage)化樹脂組成物(專利文獻1〇),但是這種使用氫 化環氧樹脂的樹脂組成物存在耐紫外線特性差的問題。此 外,提出了一種包含了含異氰脲酸衍生物基的有機聚矽氧 烷與環氧樹脂的組成物(專利文獻U),有機聚矽氧烷一 般用作世封半導體的盼樹脂(phenol resin )、環氧樹脂中的 添加劑。但是,此環氧樹脂組成物並不是用來對LED進行 透明密封的,而且關於矽酮主鏈骨架也限定為直鏈骨架, 並且並未提及矽酮的分子量分佈。 [專利文獻1]日本專利第3241338號公報 [專利文獻2]曰本專利特開平7_25987號公報 [專利文獻3]日本專利特開2002-327126號公報 [專利文獻4]日本專利特開2002-338833號公報 [專利文獻5]日本專利特開2002-314139號公報 [專利文獻6]日本專利特開2〇〇2_314143號公報 [專利文獻7]曰本專利特開昭52-107049號公報 [專利文獻8]日本專利第3399652號公報 [專利文獻9]日本專利特開2004-238589號公報 [專利文獻10]曰本專利特開2005-263869號公報 [專利文獻11]曰本專利特開2004-99751號公報 【發明内容】 本發明疋雲於所述情況研究而成的,本發明的目的在 於提供一種耐熱性、耐光性且主要是耐龜裂性優異的光半 導體元件密封用環氧樹脂組成物。 本發明者為了達成所述目的而努力研究,結果發現以 8 201 i〇m 下述式(1)所表示的矽酮改質環氧化合物可以形成耐熱 性、耐光性以及耐龜裂性優異的硬化物。 也就是說’本發明是一種光半導體密封用樹脂組成 物’其特徵在於包含下述(A)成分、(B)成分及(C) 成分: (A) 1分子中具有兩個以上的環氧基,以下述式 所表示,且分散度在丨.〇〜丨.2以内的矽酮改質環氧化合物 100質量份 [化1] R1 | R1 ,1 , R1 | Ri I I I _S 卜 ΟΙ — I -Si-O- I I -Si—R2 (l) R1 1 R1 a I R2 b 1 R1 (R1互相獨立,為碳數1〜10的被取代或者未被取代 的一價烴基,R2為以下述式(2)或式(3)所表示的基, a、b為選自整數0〜20中的一個以上整數) [化2]BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon modified epoxy which is excellent for heat resistance test and which is excellent in heat crack resistance for sealing an optical semiconductor element. Resin composition. [Prior Art] Conventionally, a transparent epoxy resin composition has been widely used as an optical semiconductor element sealing resin for sealing an optical semiconductor element. The component of the epoxy resin composition for optical semiconductor sealing usually contains an alicyclic epoxy resin, a curing agent, and a curing catalyst, and is formed by a molding method such as casting molding or transfer molding. The epoxy resin composition for optical semiconductor sealing flows into a mold in which an optical semiconductor element is disposed and is cured to seal the optical semiconductor element (Patent Document 1 and Patent Document 2). However, recently, with the brighter and higher power of blue light-emitting diodes (LEDs) and white LEDs, LED components sealed with conventional transparent epoxy resins appear to have a wavelength change over time. Short blue light or ultraviolet light and discoloration (yellowing). Moreover, problems such as high water absorption rate and poor moisture resistance durability have also been pointed out. Therefore, those skilled in the art have also proposed a resin composition for protecting a photo-semiconductor element, the resin composition for coating protection of the photo-semiconductor element comprising: at least two carbons having reactivity with a SiH group in one molecule - an organic compound having a carbon double bond or a ruthenium resin, which contains 6 201105715 34693pif at least two SiH group ruthenium compounds, and a hydrosilylation catalyst (Patent Document 3, Patent Document 4) 0 However, this The ketone-based cured product has the following disadvantages: if the crack resistance is to be improved, the tacky surface of the cured product usually has a tack, which is liable to adhere to dust and impair the light transmittance. In order to solve these problems, those skilled in the art have proposed to use a high hardness fluorenone resin for protecting a coating (Patent Document 5, Patent Document 6). However, a case type light-emitting semiconductor device in which a light-emitting element is disposed in a ceramic and/or plastic case and filled with an oxime resin inside the case has the following problem, that is, Because these high hardness fluorenone resins have insufficient toughness and adhesion, they are at _4 〇. In the thermal shock test of (:~12〇^:, the fluorenone resin is peeled off from the ceramic or plastic of the casing, or cracks are generated, etc. Further, as a composition having the possibility of compensating for these disadvantages, A composition comprising an epoxy resin and a linaloyl resin (Patent Document 7 and Patent Document 8), but such a composition also has a problem of insufficient adhesion or f-light deterioration and discoloration. Further, in order to improve the strength of the resin , UV resistance, a cation curing catalyst is used to catalyze a siloxane compound having an epoxy group and/or an oxetanylgrupup with a silsesquioxane compound. A method of hardening (Patent Document 9), but there are problems such as corrosion and coloring caused by onium ions or the like generated by the cation hardening catalyst to be used. In addition, a combination of a sesquisesquioxane compound and a hydrogenated epoxy resin is proposed. B-stage 201105715 34693pif (B-Stage) resin composition of resin (Patent Document 1), but this use of hydrogenated epoxy resin The fat composition has a problem of poor ultraviolet resistance. Further, a composition comprising an organopolysiloxane containing an isocyanuric acid derivative group and an epoxy resin is proposed (Patent Document U), an organic polyoxyalkylene oxide. It is generally used as an additive in phenol resin and epoxy resin of the world-sealed semiconductor. However, this epoxy resin composition is not used to transparently seal the LED, and the skeleton of the fluorenone main chain is also limited to In the case of the linear chain, the molecular weight distribution of the anthrone is not mentioned. [Patent Document 1] Japanese Patent No. 3241338 [Patent Document 2] Japanese Patent Laid-Open No. Hei 7-25987 (Patent Document 3) Japanese Patent Laid-Open No. 2002- [Patent Document 4] Japanese Patent Laid-Open Publication No. JP-A-2002-338133 [Patent Document 5] Japanese Patent Laid-Open Publication No. JP-A No. Hei. [Patent Document 8] Japanese Patent No. 3396652 [Patent Document 9] Japanese Patent Laid-Open No. 2004-238589 (Patent Document 10) Japanese Patent Laid-Open No. 2005-263869 number [Patent Document 11] JP-A-2004-99751 SUMMARY OF THE INVENTION The present invention has been studied in the above-described circumstances, and an object of the present invention is to provide heat resistance, light resistance and mainly tortoise resistance. In order to achieve the above object, the inventors of the present invention have intensively studied and found that the fluorenone modified epoxy represented by the following formula (1) is 8 201 i〇m. The compound can form a cured product excellent in heat resistance, light resistance, and crack resistance. In other words, the present invention is a resin composition for sealing a photo-semiconductor, which comprises the following components (A), (B) and (C): (A) having two or more epoxys in one molecule. The base is represented by the following formula, and the fluorenone modified epoxy compound having a degree of dispersion within 丨.〇~丨.2 is 100 parts by mass. [Chem. 1] R1 | R1 , 1 , R1 | Ri III _S ΟΙ - I -Si-O-II -Si-R2 (l) R1 1 R1 a I R2 b 1 R1 (R1 is independent of each other and is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and R2 is represented by the following formula (2) or a group represented by the formula (3), a and b are one or more integers selected from the integers 0 to 20) [Chemical 2]

[化3] 201105715 34693pif[化3] 201105715 34693pif

(3) (B) 硬化劑 0.1質量份〜100質量份 (C) 硬化催化劑相對於(a)成分與(B)成分的合 計量100質量份為0.05質量份〜3質量份。 [發明的效果] 本發明的光半導體元件密封用矽酮改質環氧樹脂組成 物希望藉由對石夕酮的分子量分佈予以控制,而減小高分子 置體與低分子量體的熱膨脹應變的差,從而消除組成物整 體的熱膨脹應變。結果實現了耐龜裂性能優異,並且财熱 性、耐光性優異的光半導體元件的密封。 上述說明僅是本發明技術方案的概述’為了能夠更清 楚瞭解本發明的技術手段,並可依照說明書的内容予以實 施,以下以本發明的較佳實例詳細說明如後。 【實施方式】 1分子中 且分散度 I. (A)碎嗣改質%;_氣化合物及其製造方法 本發明的石夕嗣改質環氧化合物的'特&徵在於: 具有兩個以上的環氧基,以下述式〇)來表示, 為1.0〜1.2,更佳為1.0〜1.1。 [化4] (1) 201105715 34693pif R1 R1(3) (B) The curing agent is 0.1 parts by mass to 100 parts by mass. (C) The curing catalyst is 0.05 parts by mass to 3 parts by mass based on 100 parts by mass of the total of the components (a) and (B). [Effect of the Invention] The fluorenone-modified epoxy resin composition for optical semiconductor element sealing of the present invention is desired to reduce the thermal expansion strain of the polymer body and the low molecular weight body by controlling the molecular weight distribution of the linaloone. Poor, thereby eliminating the thermal expansion strain of the composition as a whole. As a result, sealing of an optical semiconductor element excellent in crack resistance and excellent in heat and light resistance is achieved. The above description is only an overview of the technical solutions of the present invention. In order to provide a clearer understanding of the technical means of the present invention, and in accordance with the contents of the specification, the following detailed description of the preferred embodiments of the present invention is provided. [Embodiment] In a molecule and a degree of dispersion I. (A) % of mash mash; _ gas compound and method for producing the same The 'special& The above epoxy group is represented by the following formula: 1.0 to 1.2, more preferably 1.0 to 1.1. [4] (1) 201105715 34693pif R1 R1

2 I r I2 I r I

R2—Si—0——Si-O R1 R1 f I 1 I 2 ——Sh-0——Si—R2R2—Si—0—Si—O R1 R1 f I 1 I 2 —Sh-0—Si—R2

i I a r2 Jb ri R2是以下述式(2)或式(3)來表示。 [化5]i I a r2 Jb ri R2 is represented by the following formula (2) or formula (3). [Chemical 5]

(2) [化6] (3) R1互相獨立,為碳數1〜10的一價烴基,具體說來有 甲基、乙基、丙基、丁基等烷基,環戊基、環己基、苯基、 冰片基(norbornyl)等環烷基,苯基等芳基等,另外還可 以例示這些基被鹵基、氨基等取代所得的3,3,3-三氟丙基、 3-羥基丙基、3-氨基丙基等。這些一價烴基中,較佳為曱 基、苯基,並且較佳為全部R1的90莫耳%以上為甲基。(2) (6) R1 is independently of each other and is a monovalent hydrocarbon group having 1 to 10 carbon atoms, specifically, an alkyl group such as a methyl group, an ethyl group, a propyl group or a butyl group, a cyclopentyl group or a cyclohexyl group. a cycloalkyl group such as a phenyl group or a norbornyl group; an aryl group such as a phenyl group; and the like, and a 3,3,3-trifluoropropyl group or a 3-hydroxy group obtained by substituting these groups with a halogen group or an amino group. Propyl, 3-aminopropyl and the like. Among these monovalent hydrocarbon groups, a mercapto group, a phenyl group, and preferably 90 mol% or more of all R1 are a methyl group.

11 201105715 34693pif 式(1)中,a、b為選自整數0〜20中的一個以上的 整數,較佳為a、b為0〜10的整數。如果a、b超過所述 上限值,則難以分流,所以不佳。 含有可以具有取代基的有機曱矽烷氧基的碳數1〜12 的烴基例如可以列舉:可以具有取代基的有機甲矽烷氧基 與亞曱基(methylene )、亞乙基(ethylene )、亞丙基 (propylene)、亞丁基(butylene)等鍵結所成的基等。 此(A)矽酮改質環氧化合物例如以下述式來表示。 [化7]11 201105715 34693pif In the formula (1), a and b are one or more integers selected from the integers 0 to 20, and preferably a and b are integers of 0 to 10. If a and b exceed the upper limit value, it is difficult to divert, which is not preferable. Examples of the hydrocarbon group having 1 to 12 carbon atoms which may have an organic decyloxy group which may have a substituent include an organomethane alkoxy group which may have a substituent, a methylene group, an ethylene group, and a propylene group. A group formed by bonding such as propylene or butylene. The (A) anthrone-modified epoxy compound is represented, for example, by the following formula. [Chemistry 7]

以式(1 )所表示的化合物可以利用下述方式而容易地 製造:相對於藉由分離蒸餾或者分餾將分散度控制為1〜 1.2 ’理想的是1〜ι·ι的以下述式(4)所表示的兩末端具 有氫石夕院基(hydrosilyl)的石夕氧烧1莫耳,卜稀丙基·3,5-二縮水甘油基異氰尿酸酯、或者一氧化乙烯環己烯 (vinylcyclohexene monoxide)(即 1,2-環氧-4-乙烯基環己 垸)為1.5〜2.5莫耳,較佳為2.0〜2.1莫耳,並使用始催 化劑等氫化矽烷化催化劑,加熱到80。(:〜150Ϊ使所述化 合物進行反應。 12 201105715 34693pif [化8] R1 | R1 | R1 Η—·Si—〇— I -Si-o- I r 1 -Si—Ο R1 I L R1 J a Ι R2 R1The compound represented by the formula (1) can be easily produced by controlling the degree of dispersion to 1 to 1.2 with respect to separation distillation or fractional distillation, and is preferably 1 to ι·ι by the following formula (4) ) indicated at the two ends of the hydrosilyl group, which is hydrosilyl, 1 mil, diallyl-3,5-diglycidyl isocyanurate, or ethylene oxide cyclohexene. (vinylcyclohexene monoxide) (ie 1,2-epoxy-4-vinylcyclohexanide) is 1.5 to 2.5 moles, preferably 2.0 to 2.1 moles, and is heated to 80 using a hydrogenation sulfonation catalyst such as a catalyst. . (: ~150Ϊ The compound is reacted. 12 201105715 34693pif [Chemical 8] R1 | R1 | R1 Η—·Si—〇—I —Si-o- I r 1 —Si—Ο R1 IL R1 J a Ι R2 R1

I (4) b Ri 其中,R、R2、a、b如上所述。 如果1-烯丙基-3,5·二縮太 氢化乙嬌fp Mm曰, '、' 火甘油基異氰尿酸酯、或者一 乳化乙烯衣己烯的置小於所述下限值 未反應的氫矽烷基,成為使用 曰㈣h里的 恭治· m 使用所逃夕魏的組成物硬化時 二A3? 2 ’如果超過所述上限值,則未反應的1- 烯丙基_3,5-二縮水甘油基異氰尿酸醋、或者一氧化乙 在射肩,因峨成本方面、特財面來說都^ 鉑催化劑具有代表性的是氣鉑酸2%辛醇溶液,並 使用所用鉑量為5 ppm〜50 Ppm的量的此溶液。藉 80 C〜100 C下反應1小時〜8小時’可以高產率地人 需的化合物。另外,此反應的溶劑可以使用芳香族系所 系等的溶劑。 …、鲷 作為本發明中所使用的分散度得到控制的兩末#人= 矽烷基的矽酮,可以示出下述矽酮來作為代表。 3 11 [化9] 13 201105715 34693pif ch3 HSi-O-I (4) b Ri where R, R2, a, b are as described above. If 1-allyl-3,5·di-hydrogenate fp Mm曰, ', 'flame glyceryl isocyanurate, or an emulsified vinyl hexene is less than the lower limit is unreacted The hydroquinone alkyl group is used in the use of 曰(4)h in the treatment of the m. When the composition of the escaping Wei is hardened, the second A3? 2 'if the upper limit is exceeded, the unreacted 1-allyl_3,5 - diglycidyl isocyanuric acid vinegar, or oxidized ethylene in the shoulder, because of the cost, the special financial side ^ Platinum catalyst is representative of the gas platinum acid 2% octanol solution, and the use of platinum This amount is in an amount of 5 ppm to 50 Ppm. By reacting at 80 C to 100 C for 1 hour to 8 hours, a compound which can be obtained in high yield can be used. Further, as the solvent for the reaction, a solvent such as an aromatic system can be used. ..., 鲷 As the fluorenone of the two 人 人 = 矽 alkyl group which is controlled by the dispersion used in the present invention, the following fluorenone can be represented as a representative. 3 11 [Chem. 9] 13 201105715 34693pif ch3 HSi-O-

I CH3 ch3 Si—O CH3 ch3 I SiH I CH3 (5) ,分散度為1.02 [化 10] ch3 ch3 ch3 HSi—Ο Si 〇-j ——SiH I Ι ch3 ch3 ch3 n与4,分散度為1.08 Hb 11] CH3 Si—ΟΙ ch3 ch3 -SiH I ch3 ch3 HSj—〇— _I CH3 ch3 Si—O CH3 ch3 I SiH I CH3 (5) , the degree of dispersion is 1.02 [10] ch3 ch3 ch3 HSi—Ο Si 〇-j ——SiH I Ι ch3 ch3 ch3 n and 4, the dispersion is 1.08 Hb 11] CH3 Si—ΟΙ ch3 ch3 -SiH I ch3 ch3 HSj—〇— _

I ch3 (7) n与8,分散度為1.06 本發明中所使用的兩末端含氫矽烷基的矽酮可以單獨 或者混合使用所述石夕_。 特別是為了獲得堅硬而剛直的硬化物,本發明中所使 用的分散度得到控制的兩末端含氫矽烷基的矽酮較佳為所 述式(5)或式(6)所表示的化合物,為了獲得強韌而柔 201105715 34693pif 軟的硬化物,較佳為所述式(7)所表示的化合物。另外, 幸又佳使用分散度為l.〇〜i 2的兩末端含氫矽烷基的矽酮的 ,合物。本發明的矽酮改質環氧化合物除了可以用作環氧 柄月曰組成物的主要成分以外,還可以有效地用作各種添加 齊1J、偶聯劑(C0Upling agent)、增黏劑(tackifier)。 Π.光半導體密封用樹脂組成物 以下’對本發明的光半導體密封用樹脂組成物進行說 明。 本發明的光半導體密封用樹脂組成物以所述的(A) 石夕酿I改質環氧化合物、與硬化劑及硬化促進劑作為必需成 分0 (B)硬化劑 為了藉由與環氧基反應形成交聯物而使用硬化劑。此 更化劑可以疋通常使用的胺系硬化劑、盼系硬化劑、酸肝 系硬化劑中的任一種,從光穿透性、耐熱性等方面來考慮, 理想的是酸酐系硬化劑。 酸酐系硬化劑可以列舉:琥珀酸酐 (succinic anhydride)、鄰苯二曱酸針(phthalic anhydride)、順丁烯 二酸酐(maleic anhydride )、偏苯三酸酐(trimellitic anhydride)、均苯四酸二酐(pyromeiiitic dianhydride)、六 氫鄰苯二甲酸酐、3-甲基-六氫鄰苯二甲酸酐、4-甲基-六氫 鄰笨二甲酸酐、或者4-甲基-六氫鄰苯二甲酸酐與六氫鄰苯 二甲酸酐的混合物、四氫鄰苯二曱酸酐、曱基_四氫鄰苯二 甲酸針、納迪克酸酐(nadic anhydride )、甲基納迪克酸酐、 15 201105715 34693pif 降冰片烧_2,3·二甲酸if、甲基降冰片燒办二曱 基環己烯二甲酸if等。硬化劑⑻義配量相對於^ 基1當量為〇.5當量〜Μ當量,車交佳為0·8當量〜i 2 量。這相當於相對於(A)成分10〇質量份為〇]質二 100質量份,較佳為20質量份〜8〇質量份。 71 (C)硬化催化劑 為了使硬化反應順利地並且在短時間内完成,而使用 硬化催化劑。硬化催化劑較佳使用四級鳞鹽的一種或者兩 種以上’特別較佳使用包含以下述式⑻所表示的化人物 以及/或者以下述式(9)所表示的化合物的四級鱗鹽;的 一種或兩種以上。由此,可以生成透明、表面無黏性且不 會因回流焊(reflow)而變色的硬化物。除了以下述式(㈧ 及式(9)所表示的化合物以外的四級鱗鹽的具體例子可以 列舉:作為四級鱗的氫溴酸鹽(bromidesalt)的San_Apr〇 公司製造的“U-CAT 5003”。 [化 12] ?窖9 /〇 C4Hg-p-cH3 (CHaOJzP^I ch3 (7) n and 8, the degree of dispersion is 1.06 The two-terminal hydroquinone-containing anthrone of the present invention may be used singly or in combination. In particular, in order to obtain a hard and rigid cured product, the two-terminal hydroquinone-containing anthrone having a controlled degree of dispersion used in the present invention is preferably a compound represented by the above formula (5) or (6). In order to obtain a tough and flexible 201105715 34693pif soft cured product, the compound represented by the above formula (7) is preferred. Further, it is preferred to use an anthrone having a degree of dispersion of l.〇~i 2 at the both ends of the hydroquinone-containing alkyl group. The fluorenone modified epoxy compound of the present invention can be effectively used as a main component of the epoxy saponin composition, and can be effectively used as various additives, a coupling agent (C0Upling agent), and a tackifier (tackifier). ).树脂. Resin composition for optical semiconductor encapsulation Hereinafter, the resin composition for optical semiconductor encapsulation of the present invention will be described. In the resin composition for optical semiconductor sealing of the present invention, the (A) smelting I modified epoxy compound, and a curing agent and a curing accelerator are used as an essential component 0 (B) hardener in order to The reaction forms a crosslinked product and a hardener is used. The modifier may be any of an amine-based curing agent, a curing agent, and an acid-healing agent which are generally used, and is preferably an acid anhydride-based curing agent from the viewpoints of light transmittance and heat resistance. Examples of the acid anhydride-based hardener include succinic anhydride, phthalic anhydride, maleic anhydride, trimellitic anhydride, and pyromidoic dianhydride. ), hexahydrophthalic anhydride, 3-methyl-hexahydrophthalic anhydride, 4-methyl-hexahydrophthalic anhydride, or 4-methyl-hexahydrophthalic anhydride Mixture of hexahydrophthalic anhydride, tetrahydrophthalic anhydride, mercapto-tetrahydrophthalic acid needle, nadic anhydride, methyl nadic anhydride, 15 201105715 34693pif norbornene _ 2,3 · dicarboxylic acid if, methyl norbornene burned dimercaptocyclohexene dicarboxylic acid if and so on. The amount of the hardener (8) is 〇.5 equivalents to Μ equivalent per 1 equivalent of the base, and the amount of the vehicle is preferably 0.8 eq to 2 i. This corresponds to 100 parts by mass of the mass of the component (A), preferably 100 parts by mass, preferably 20 parts by mass to 8 parts by mass. 71 (C) Hardening catalyst A hardening catalyst is used in order to make the hardening reaction smoothly and in a short time. The hardening catalyst is preferably one or two or more of the quaternary scale salts. It is particularly preferable to use a quaternary scale salt comprising a chemical group represented by the following formula (8) and/or a compound represented by the following formula (9); One or two or more. Thereby, it is possible to produce a cured product which is transparent, has no surface adhesion, and does not change color due to reflow. Specific examples of the quaternary scale salt other than the compound represented by the following formula ((8) and (9)) include "U-CAT 5003" manufactured by San_Apr〇 Co., Ltd., which is a tetrabasic scale hydrobromide salt (bromidesalt). ”[Chemistry 12] 窖9 /〇C4Hg-p-cH3 (CHaOJzP^

?當9 S C4H9~|卜C4H9 (〇2Η5〇)2《Θ (9) c4h9 s 也可以將所述催化劑和其他硬化催化劑同時使用。這 201105715 34693pif 種硬化催化劑可以列舉:三苯基膦(triphenyiphosphine)、 二苯基膦等有機膦系硬化催化劑,1,8-二氮雜雙環(5,4,〇) 十細( l,8-diazabicycl〇(5,4,0)undecen-7 )、三乙醇胺 (triethanolamine)、一 曱节胺(benzyldimethylamine)等第 二胺系硬化催化劑,2·曱基咪唑(2_methylimidaz〇le)、2_ 苯基-4-甲基咪u坐等味唾類等。 硬化催化劑(C )的調配量相對於所述(A)成分與(B ) 成分的合計量100質量份較佳為〇 〇5質量份〜3質量份。 如果硬化催化_繼量小於所述下限值,财可能不能 獲得充分的促輯氧樹脂與硬化瓶應的效果 。另外,如 果石f匕催化劑的調配量超過所述上限值,則有可能成為硬 化日守或回流焊試驗時產生變色的原因。 (D)環氧樹脂 μ 八#目* 魏樹脂料性縣的範_,添加 :+Η匕由八一兩個以上基的現有的環氧樹脂。這種環; 罅:Α刑:^子中具有兩個環氧基的環氧樹脂可以列舉 雙酚^乳樹脂、雙酚F型環氧樹脂 novolac)型環氧樹脂 啊wpnen( 樹脂、萘(naphthalene)型二二咖1^0^)型環ΐ 苯紛芳絲聯苯型環氧樹脂、 香環氣化所得;二::,種環,旨㈣ (dicyclopentadiene )型環氧傲t 日一環戊一轉 尿酸三縮水甘油晴芳香族二氧=只= 201105715 34693pif 有至少兩個環氧基則並不限定於所述樹脂。這些 壤乳树月日可以單獨使用或者使用兩種以上。1中,在二 =光ί導體ί置時,為了防止因光引起的劣化,適 :始7Γ用風化型環氧樹脂、脂環族環氧樹脂或異氰尿酸 二縮水甘油酯等非芳香族系環氧樹脂。 …環氧樹脂的調配量相對於⑷成分與⑻成分的合 计置100質量份為(U質量份〜90質量份,較佳為〇3質 量份〜30質量份。如果硬化催化劑的調酉己量小於所述下限 值,則硬化變得緩慢。另夕卜如果硬化催化劑的調配量超 過所述上限值,則會引起變色。 (Ε)抗氧化劑 本發明中,為了提南樹脂的耐熱性,可以相對於(A ) 成为與(B)成分的合計量1〇〇質量份而調配〇 〇1質量份 〜1.0質量份的抗氧化劑。此抗氧化劑較佳為受阻酚 (hindered phenol)系抗氧化劑,例如可以例示:四[3_(3,5_ 一弟二丁基4-經基苯基)丙酸]季戊四醇醋、n,N,·雙(3-(3,5-二第三丁基_4_羥基苯基)丙醯基)丙二胺 (N,N -propane-l,3-diylbis[3-(3,5-di-tert-butyl-4-hydroxyphe nyl)propionamide])、硫代雙亞乙基雙[3·(3 5•二第三丁基_4· 罗里基本基)丙酸g旨](thiodiethylene bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate])、 3-(3,5-二第三丁基-4-羥基苯基)丙酸十八烧基酯、6,6,_二第 三丁基-2,2'-硫代雙-對曱紛、N,N’-雙(3-(3,5-二第三丁基-4-羥基苯基)丙醯基)己二胺、3,5-二第三丁基_4_羥基苯丙酸異 201105715 34693pif 辛酯(561^狀卩1'〇?&11〇匕以(1,3,5-1^(1,1-出11^1^以1^1)· 4-hydroxy_, C7-9-branched alkyl ester)、[[3,5-二(1,1-二甲基 乙基)-4-羥基苯基]甲基]膦酸二乙酯、2,2,-亞乙基雙[4,6-二 第三丁基苯酚]、3,3’,3’’,5,5,,5,,-六第三丁基-a,a,,a,,-(均三甲 基苯-2,4,6-三基)三-對曱酚、雙[[[3,5-二(1,1-二曱基乙 基)-4-羥基苯基]甲基]二乙基]膦酸鈣、4,6-雙(辛硫基甲基) 鄰曱酚、4,6-雙(十二烷硫基曱基)鄰曱酚、亞乙基雙(氧基 亞乙基)雙[3-(5-第三丁基-4-羥基-間甲苯基)丙酸酯]、六亞 甲基雙[3-(3,5-二第三丁基—4-羥基苯基)丙酸酯、ι,3,5-三 (3,5-二第三丁基-4-羥基苄基)-1,3,5-三嗪-2,4,6-三酮、1,3,5-三[(4-第三丁基-3-羥基-2,6-二甲苯基)曱基]-1,3,5-三嗪 -2,4,6(111,311,511)-三酮、6,6’-二第三丁基-4,4'-硫代雙(間甲 酚)、二苯基胺、N-苯基苯胺與2,4,4-三曱基戊烯的反應產 物、2,6-二第三丁基-4_(4,6-雙(辛硫基)-1,3,5-三嗪-2-基氨 基)本盼、3,4-二氫-2,5,7,8-四曱基-2-(4,8,12-三甲基十三烧 基)-2Η-1-苯並吼喃-6-醇、2’,3-雙[[3-[3,5-二第三丁基-4-羥 基苯基]丙醯基]]丙醯肼、3,3'-硫代二丙酸雙十二烷基酯、 3,3’-硫代二丙酸雙十八烷基酯等。 抗氧化劑也可以使用填系抗氧化劑,例如可以例示: 亞磷酸三苯酯、雙[2,4-二(1,1-二甲基乙基)-6-曱基苯基]亞 磷酸乙酯、三(2,4·二第三丁基苯基)亞磷酸酯、4,4’-[1,1'-聯笨基]亞基二膦酸-四[2,4-二第三丁苯基]酯 (tetrakis(2,4-di-tert-butylphenyl)-1,1 -biphenyl-4,4'-diylbisph osphonite)、2,2’,2”-次氮基[三乙基-三[3,3’,5,5’_四第三丁基 19 201105715 34693pif -1,1,-聯笨-2,2’-二基]亞磷酸酯、[[3,5-二(1,1-二曱基乙基)冰 羥基苯基]甲基]磷酸二乙酯等。 (F) 紫外線吸收劑 為了提高樹脂的耐光性,可以相對於(A)成分與(β) 成分的合計量100質量份而調配0.01質量份〜1.0質量份 的受阻胺(hindered amine )系紫外線吸收劑。此抗熱劣化 劑可以例示:2,2,4,4-四甲基-7-氧雜-3,20-二氮雜二螺 [5.1.11.2] -二十一烷-21-酮、2,2,4,4-四甲基-21-氧代_7_氧雜 -3,20-二氮雜二螺[5.1.11.2]-二十一烷-20-丙酸十二燒基 3旨、2,2,4,4-四曱基-21-氧代-7-氧雜-3,20-二氮雜二螺 [5.1.11.2] -二十一烷-20-丙酸十四烷基酯、[{3,5-二(1山二甲 基乙基)-4-羥基苯基}曱基]丁基丙二酸二(1,2,2,6,6-五甲基 -4-呱啶基)酯、癸二酸二(2,2,6,6-四甲基-4-呱啶基)酯、聚 [{6-(1,1,3,3-四曱基 丁基)氨基-1,3,5-三嗪 _2,4_ 二 基} {(2,2,6,6·四甲基-4-°瓜咬基)亞氨基}六亞甲基{(2,2,6,6_ 四曱基-4-呱啶基)亞氨丨]、2-(2H-苯旅三唑-2-基)-4,6-雙(1· 甲基-1-苯基乙基)苯紛、2,2',2,,-次氮基[三乙基-三[3,3’,5,5,-四第三丁基-1,1,-聯苯_2,2,_二基]]亞磷酸酯、2-(2H-苯並三 唑-2·基)-4,6-二第三戊基苯酚等。 (G) 螢光體 為了對樹脂進行藍色LED、紫外LED (Ultraviolet LED ’ UVLED )等發光波長的轉換,V以添加各種周知的 營光體粉末。作為具有代表性的黃色榮光體’特別有利的 是含有由通式A3B5〇〇12[3m (式中,成分A具有選自釔 20 201105715 34693pif (Υ)、釓(Gd)、錢(Tb)、鑭(La)、鑄(Lu)、砸(Se) 及釤(Sm)所組成組群中的至少一種元素,成分B具有選 自鋁(A1)、鎵(Ga)及銦(in)所組成組群中的至少一種 元素’成分Μ具有選自飾(Ce)、镨(ρΓ)、銪(Eu)、鉻 (cr)、鈥(Nd)及铒(Er)所組成組群中的至少一種元素) 的石榴石(garnet)的組群所構成的螢光體粒子。包含放 射藍色光的發光二極體晶片的放射白色光的發光二極體元 件用途的螢光體適合的是Y3Al5012〇Ce螢光體以及/或者 (Y,Gd,Tb)3(Al,Ga)5〇i[2[]Ce榮光體。其他螢光體例如可以 列舉:CaGa2S4[HCe3+以及 SrGa2S4C]Ce3+、YA103|HCe3+、 YGa03[I]Ce3+、Y(Al,Ga)03[HCe3+、Y2Si05[HCe3+等。另外, 為了形成混合色的光,除了這些螢光體以外適合的是以稀 土族而摻雜的鋁酸鹽(aluminate)或以稀土族而摻雜的正 矽酸鹽(orthosilicate)等。此螢光體可以相對於(a)成 分與(B)成分的·合計量100質量份而調配〇.1質量份〜1〇〇 質量份。 (H) 增黏劑 為了提高樹脂的黏著力,可以相對於(A)成分與(B) 成分的合計量100質量份而調配0.01質量份〜丨0質量份 的毓基系矽烷系偶聯劑。 (I) 無機填充劑 為了使樹脂獲得LED光擴散效果及防止螢光體沉澱 的效果,降低膨脹係數,可以相對於(A)成分與(b)成 分的合計量100質量份而調配〇.〇1質量份〜1〇〇質量份的 21 201105715 34693pif 無機填充劑。無機填充劑可以適宜地添加二氧化矽 silica)、氧化鈦、氧化鋅、氧化鋁、碳酸鈣等。 本發明⑽脂組成物可以適錢料絲被覆保護光 半導體元件的被覆保護材料而使用。此時,此元件可以列 舉.發光二極體(LED)、有機電致發光元件(有機EL)、 鐳射二極體(laser diode)、LED陣列等。 本發明的組成物適合使用於箱式的發光半導體裝置, 也就是說合於將發光元件配置在陶瓷以及/或者塑膠殼 體内覆蓋配置在此殼體内的此元件而將本發明的組成物 填充到殼體⑽加以硬化而使用。另外,也可以藉由印刷 ^ :轉移成形、注射成形(injecti〇n m〇lding)、壓縮成形 將本發明的組成物施於搭載在矩陣化的基板上的LED 上,來保護此LED。當藉由灌注(potting)或注射等來被 覆保遵LED等發光半導體裝置時,本發明的樹脂組成物較 佳為液狀。此樹脂組成物的黏度較佳為,以25。〇下利用旋 轉黏度s十的測定值計為1〇 mPa mpa · s,特 佳為100mPa· s〜l,〇〇〇,〇〇〇mPa· s左右。另一方面,當 藉由轉移成形等來製造發光半導體裝置時,不僅可以使用 斤述的液狀樹脂來成形,也可以使用將液狀樹脂增稠使它 固形化(B階段化)而形成的顆粒來成形。 本發明中’被覆保護材料的硬化條件可以配合作業條 件’考慮生產性與發光元件或殼體的耐熱性的平衡而在 25C下72小時〜2〇(TCt 3分鐘的範圍内適宜選定。當採 用轉移成形或注射成形時,藉由以150°C〜180Ϊ:的溫度、 22 201105715 34693pif 20 kgf/cm2〜50 kgf/cm2的壓力成形!分鐘〜5分鐘可以 容易地製造發光半導體裝置。另外,可以在ΐ5〇ΐ〜 200°C、1小時〜4小時的條件下進行後硬化(二次硬化或 者後烘培(post cure)) ° [實例] 以下,揭示實例來具體地說明本發明,但是本發明並 不受下述實例的限制。 [實例1] 將1-烯丙基-3,5-二縮水甘油基異氰尿酸酯200 0克 (0·71莫耳)、及以下述式 [化 13] ch3 I 3 HSi一ΟΙ ch3 ch3 ! Si—〇-CH, ch3 I -$iH I CH, n与3,分散度為102 的氫矽氧烷(氫矽氧烷A) 131.7克(0.37莫耳)投入 到0.5升的可分離式燒瓶中,添加氣鉑酸2%辛醇溶液(鉬 (Pt)量為20 ppm),在8〇°c〜100°C下反應6小時後,在 減壓下蒸餾去除未反應物,獲得無色透明的液體(稱為‘‘化 合物Γ) 312 g。產率為94%。 化合物1的物性如下所述。 環氧當量(使用三菱化學公司製造的自動滴定裂置 GT-100) : 245 g/mol 23 201105715 34693pif 折射率(25°c,使用ATAGO公司製造的數位折射儀 RX5000) : 1.47857 几素分析值 C: 0.432C0.442),Si: 0.1517(0.1528), 〇 : 0.2555 ( 0.2437),N : 0.0888 (0.0914),Η : 0.0720 (0.0680) ’其中()内是理論值。 比重(23°C) : U1 黏度(60°C ) : 5.02 Pa · s 分散度:1.02 (使用東曹(Tosoh )公司製造的 HLC-8220GPC ’ 四氫。夫喃(tetrahydrofuran,THF)溶劑) [實例2] 將一氧化乙烯環己烯(即1,2-環氧-4-乙烯基環己烷) 200.0克(1.61莫耳)、及所述式的氫矽氧烷(氫矽氧烷a) 259.8克(0.73莫耳)投入到〇.5升的可分離式燒瓶中,添 加氣紐酸2%辛醇溶液(pt量為20 ppm) ’在80°C〜100°C 下反應7小時後,在減壓下蒸餾去除未反應物’獲得無色 透明的液體(稱為“化合物II”)423 g。產率為92%。 化合物II的物性如下所述。 環氧當量(使用三菱化學公司製造的自動滴定裝置 GT-100) : 245 g/mol 折射率(25°C,使用ATAGO公司製造的數位折射儀 RX5000) : 1.47857 元素分析值 C : 0.4965 ( 0.5070 ),Si: 0.2490 ( 0.2541 ), 〇 : 0,1550 (0.1447),Η : 0.0995 (0.0942) ’ 其中,()内 是理論值。 24 201105715 34693pif 比重(23°C ) : 1.10 黏度(60°C ) : 2.03 Pa · s 分散度:1.02 (使用東曹公司製造的HLC-8220GPC, THF溶劑) [實例3及實例4] 代替氫矽氧烷A而以下表1所示的量使用下述氫矽氧 烷B、氫矽氧烷C,以與實例1相同的方法分別獲得化合 物III及化合物IV。 氫矽氧烷B [化 14]When 9 S C4H9~|Bu C4H9 (〇2Η5〇) 2 "Θ (9) c4h9 s can also be used together with other hardening catalysts. The 201105715 34693pif type hardening catalyst can be exemplified by an organophosphine-based hardening catalyst such as triphenyiphosphine or diphenylphosphine, and 1,8-diazabicyclo(5,4,fluorene). Diazabicycl〇(5,4,0)undecen-7 ), triethanolamine, benzyldimethylamine, etc., second amine-based hardening catalyst, 2·methylimidaz〇le, 2_phenyl- 4-Methyl i u sit and wait for saliva and so on. The amount of the curing catalyst (C) is preferably 5 parts by mass to 3 parts by mass based on 100 parts by mass of the total of the components (A) and (B). If the hardening catalysis is less than the lower limit, it may not be sufficient to promote the effect of the oxygen resin and the hardened bottle. Further, if the amount of the catalyst is more than the above upper limit, it may cause discoloration during the hardening or reflow test. (D) Epoxy resin μ 八#目* Wei resin material county _, added: + 现有 from the eight or more base of the existing epoxy resin. Such a ring; 罅: Α :: The epoxy resin having two epoxy groups in the ^ can be exemplified by bisphenol/lact resin, bisphenol F-type epoxy resin novolac type epoxy resin, wpnen (resin, naphthalene ( Naphthalene) type two two coffee 1^0^) type ring 苯 benzene fragrant fiber biphenyl type epoxy resin, aroma ring gasification; two::, species ring, purpose (four) (dicyclopentadiene) type epoxy proud t day a ring Ethyl uric acid triglycidyl clear aromatic dioxane = only = 201105715 34693pif The presence of at least two epoxy groups is not limited to the resin. These poplar trees can be used alone or in combination of two or more. In the case of 1st, when the second = light ί conductor is placed, in order to prevent deterioration due to light, it is suitable for non-aromatics such as weathering epoxy resin, cycloaliphatic epoxy resin or diglycidyl isocyanurate. Epoxy resin. The amount of the epoxy resin is 100 parts by mass based on the total of the components (4) and (8) (U mass parts to 90 parts by mass, preferably 3 parts by mass to 30 parts by mass. If the amount of the curing catalyst is adjusted) When the amount is less than the lower limit, the hardening becomes slow. Further, if the amount of the curing catalyst exceeds the upper limit, discoloration is caused. (Ε) Antioxidant In the present invention, in order to heat resistance of the resin The antioxidant may be blended in an amount of from 1 part by mass to 1.0 part by mass per part by mass of the component (B). The antioxidant is preferably a hindered phenol type anti-oxidant. The oxidizing agent may, for example, be exemplified by: tetra[3_(3,5_di-dibutyl 4-perphenyl)propionic acid] pentaerythritol vinegar, n,N,·bis(3-(3,5-di-t-butyl) _4_hydroxyphenyl)propane-l,3-diylbis[3-(3,5-di-tert-butyl-4-hydroxyphe nyl)propionamide], sulfur Substituted bis(ethylene)bis[3·(3 5•di-tert-butyl_4·Rory basic) propionic acid g] (thiodiethylene bis[3-(3,5-di-tert-butyl-4- Hydroxyphenyl)propionate]), 3- (8,5-di-t-butyl-4-hydroxyphenyl)propionic acid octadecyl ester, 6,6,_di-t-butyl-2,2'-thio-double-pair, N , N'-bis(3-(3,5-di-t-butyl-4-hydroxyphenyl)propanyl) hexamethylenediamine, 3,5-di-t-butyl-4- hydroxyphenylpropionic acid 201105715 34693pif Octyl ester (561^卩1'〇?&11〇匕 to (1,3,5-1^(1,1-out 11^1^ to 1^1)· 4-hydroxy_, C7- 9-branched alkyl ester), [[3,5-bis(1,1-dimethylethyl)-4-hydroxyphenyl]methyl]phosphonic acid diethyl ester, 2,2,-ethylene double [4,6-di-t-butylphenol], 3,3',3'',5,5,,5,,-hexa-tert-butyl-a,a,,a,,-(all three Benzo-2,4,6-triyl)tri-p-nonylphenol, bis[[[3,5-bis(1,1-didecylethyl)-4-hydroxyphenyl]methyl]diethyl Calcium phosphonate, 4,6-bis(octylthiomethyl)-o-nonylphenol, 4,6-bis(dodecylsulfanyl)-o-nonylphenol, ethylene bis(oxyethylene) Bis[3-(5-tert-butyl-4-hydroxy-m-tolyl)propionate], hexamethylene bis[3-(3,5-di-t-butyl- 4-hydroxyphenyl) Propionate, iota, 3,5-tris(3,5-di-t-butyl-4-hydroxybenzyl)-1,3,5-triazine-2,4,6- Triketone, 1,3,5-tris[(4-tert-butyl-3-hydroxy-2,6-dimethylphenyl)indenyl]-1,3,5-triazine-2,4,6 ( 111,311,511)-trione, 6,6'-di-t-butyl-4,4'-thiobis(m-cresol), diphenylamine, N-phenylaniline and 2,4, Reaction product of 4-tridecylpentene, 2,6-di-t-butyl-4-(4,6-bis(octylthio)-1,3,5-triazin-2-ylamino) ,3,4-dihydro-2,5,7,8-tetradecyl-2-(4,8,12-trimethyltridecyl)-2Η-1-benzopyran-6-ol , 2',3-bis[[3-[3,5-di-t-butyl-4-hydroxyphenyl]propanyl]]propane, 3,3'-thiodipropionate Alkyl ester, di-octadecyl 3,3'-thiodipropionate, and the like. The antioxidant may also be a filler-based antioxidant, and for example, triphenyl phosphite, bis[2,4-di(1,1-dimethylethyl)-6-nonylphenyl]phosphite ethyl acrylate , tris(2,4·di-t-butylphenyl)phosphite, 4,4′-[1,1′-biphenyl]subunit diphosphonic acid-tetra[2,4-di 3rd Phenyl] ester (tetrakis(2,4-di-tert-butylphenyl)-1,1-biphenyl-4,4'-diylbisph osphonite), 2,2',2"-nitrilo[triethyl-trisyl] [3,3',5,5'_tetrabutylbutyl 19 201105715 34693pif -1,1,-Lian-2,2'-diyl]phosphite, [[3,5-di(1, (1-dimercaptoethyl)-dihydroxyphenyl]methyl]phosphoric acid diethyl ester, etc. (F) The ultraviolet absorber can be used in combination with the (β) component and the (β) component in order to improve the light resistance of the resin. 100 parts by mass of 0.01 parts by mass to 1.0 part by mass of a hindered amine-based ultraviolet absorber. The heat-resistant deterioration agent can be exemplified by 2,2,4,4-tetramethyl-7-oxa-3 ,20-diazabispiro[5.1.11.2]-hexadecane-21-one, 2,2,4,4-tetramethyl-21-oxo-7-oxa-3,20-di Aza-bispiro[5.1.11.2]-docosane-20-propionic acid 3,2,4,4-tetradecyl-21-oxo-7-oxa-3,20-diazaspiro[5.1.11.2]-docosane-20-propionic acid Tetradecyl ester, [{3,5-di(1 dimethylenediethyl)-4-hydroxyphenyl}indolyl]butylmalonic acid di(1,2,2,6,6-five Methyl-4-acridinyl) ester, bis(2,2,6,6-tetramethyl-4-acridinyl) sebacate, poly[{6-(1,1,3,3- Tetramethyl butyl)amino-1,3,5-triazine_2,4_diyl} {(2,2,6,6·tetramethyl-4-° melon) imino}hexamethylene Base {(2,2,6,6_tetradecyl-4-acridinyl)iminoindole], 2-(2H-phenylbendazole-3-yl)-4,6-bis(1·methyl -1-phenylethyl)benzene, 2,2',2,--nitro-[triethyl-tris[3,3',5,5,-tetradecyl-1,1, -biphenyl-2,2,-diyl]]phosphite, 2-(2H-benzotriazol-2yl)-4,6-di-p-pentylphenol, etc. (G) Phosphor In order to convert the light-emitting wavelength of a blue LED or an ultraviolet LED (Ultraviolet LED 'UVLED) to the resin, V is added with various well-known campsite powders. As a representative yellow glory, it is particularly advantageous to contain a general formula. A3B5〇〇12[3m (wherein component A has a choice from 钇20 201105715 34693pif (Υ), 釓 (Gd), money (Tb), 镧 (La), cast (Lu), 砸 (Se) and 钐 (Sm) at least one element of the group, component B has the choice At least one element 'component Μ from a group consisting of aluminum (A1), gallium (Ga), and indium (in) has a composition selected from the group consisting of (Ce), 镨(ρΓ), 铕(Eu), and chromium (cr). A phosphor particle composed of a group of garnets of at least one element selected from the group consisting of N(Nd) and E(Er). A phosphor for use in a light-emitting diode element containing a white-emitting diode that emits blue light is suitable for a Y3Al5012〇Ce phosphor and/or (Y, Gd, Tb) 3 (Al, Ga). 5〇i[2[]Ce glory body. Examples of other phosphors include CaGa2S4 [HCe3+ and SrGa2S4C]Ce3+, YA103|HCe3+, YGa03[I]Ce3+, Y(Al,Ga)03[HCe3+, Y2Si05[HCe3+, and the like. Further, in order to form a mixed color of light, an aluminate doped with a rare earth group or an orthosilicate doped with a rare earth group is suitable in addition to these phosphors. The phosphor may be blended in an amount of 0.1 part by mass to 1 part by mass based on 100 parts by mass of the total of the component (a) and the component (B). (H) The tackifier may be added in an amount of 0.01 part by mass to 0% by mass based on 100 parts by mass of the total of the component (A) and the component (B), in order to increase the adhesive strength of the resin. . (I) The inorganic filler can be blended with 100 parts by mass of the total amount of the component (A) and the component (b) in order to obtain the effect of the LED light diffusing effect and the effect of preventing precipitation of the phosphor, and to reduce the expansion coefficient. 1 part by mass of 1 part by mass of 21 201105715 34693pif inorganic filler. As the inorganic filler, cerium oxide silica, titanium oxide, zinc oxide, aluminum oxide, calcium carbonate or the like can be suitably added. The lipid composition of the present invention (10) can be used by coating a protective material for protecting a photo-semiconductor element with a cord. In this case, the element can be listed as a light-emitting diode (LED), an organic electroluminescence element (organic EL), a laser diode, an LED array or the like. The composition of the present invention is suitable for use in a box-type light-emitting semiconductor device, that is, a composition in which the light-emitting element is disposed in a ceramic and/or plastic housing to cover the element disposed in the housing. It is filled into the casing (10) and hardened for use. Alternatively, the LED may be protected by printing, transfer molding, injection molding, or compression molding by applying the composition of the present invention to an LED mounted on a matrix substrate. When the light-emitting semiconductor device such as LED is covered by potting, injection or the like, the resin composition of the present invention is preferably liquid. The viscosity of the resin composition is preferably 25. The measured value of the rotational viscosity s ten under the armpit is 1 〇 mPa mpa · s, particularly preferably 100 mPa·s~l, 〇〇〇, 〇〇〇mPa·s or so. On the other hand, when a light-emitting semiconductor device is manufactured by transfer molding or the like, it can be formed not only by using a liquid resin as described above, but also by solidifying a liquid resin (B-staged). The particles are shaped. In the present invention, the curing condition of the coating protective material can be selected in consideration of the balance between the productivity and the heat resistance of the light-emitting element or the casing in consideration of the balance between the productivity and the heat resistance of the light-emitting element or the casing at 25 C to 2 Torr (TCt 3 minutes). In the case of transfer molding or injection molding, a light-emitting semiconductor device can be easily fabricated by forming at a temperature of 150 ° C to 180 Ϊ:, 22 201105715 34693 pif 20 kgf / cm 2 to 50 kgf / cm 2 ! minutes to 5 minutes. Post-hardening (secondary hardening or post-curing) under conditions of 〇ΐ5〇ΐ to 200 ° C for 1 hour to 4 hours. [Examples] Hereinafter, the present invention will be specifically described by way of examples, but The invention is not limited by the following examples. [Example 1] 1-allyl-3,5-diglycidyl isocyanurate 200 g (0.71 mol), and the following formula [ 13] ch3 I 3 HSi-ΟΙ ch3 ch3 ! Si-〇-CH, ch3 I -$iH I CH, n and 3, hydroperoxy oxane (hydrogen oxane A) with a dispersion of 102 131.7 g (0.37 Moor) was placed in a 0.5 liter separable flask and added with a solution of 25% octanol in gas platinum (Pt) (20 pp) m), after reacting at 8 ° C to 100 ° C for 6 hours, the unreacted product was distilled off under reduced pressure to obtain a colorless transparent liquid (referred to as ''compound oxime) 312 g. The yield was 94%. The physical properties of Compound 1 are as follows: Epoxy equivalent (using automatic titration cracking GT-100 manufactured by Mitsubishi Chemical Corporation): 245 g/mol 23 201105715 34693pif Refractive index (25°c, using digital refractometer RX5000 manufactured by ATAGO Corporation) ) : 1.47857 calculus analysis value C: 0.432C0.442), Si: 0.1517 (0.1528), 〇: 0.2555 ( 0.2437), N : 0.0888 (0.0914), Η : 0.0720 (0.0680) 'where () is the theoretical value . Specific gravity (23 ° C) : U1 Viscosity (60 ° C) : 5.02 Pa · s Dispersity: 1.02 (Using HLC-8220GPC from Tosoh Corporation 'tetrahydrofuran (THF) solvent) [ Example 2] 200.0 g (1.61 mol) of ethylene oxide cyclohexene (i.e., 1,2-epoxy-4-vinylcyclohexane), and hydroquinone of the formula (hydroquinone a 259.8 g (0.73 mol) was placed in a 5 liter separable flask, and a 2% octanol solution of oxytetramate (20 ppm of pt) was added. 'Reaction at 80 ° C to 100 ° C for 7 hours. Thereafter, the unreacted product was distilled off under reduced pressure to obtain 423 g of a colorless transparent liquid (referred to as "Compound II"). The yield was 92%. The physical properties of Compound II are as follows. Epoxy equivalent (using automatic titrator GT-100 manufactured by Mitsubishi Chemical Corporation): 245 g/mol refractive index (25 ° C, using digital refractometer RX5000 manufactured by ATAGO): 1.47857 Elemental analysis value C : 0.4965 ( 0.5070 ) , Si: 0.2490 ( 0.2541 ), 〇: 0, 1550 (0.1447), Η : 0.0995 (0.0942) ' where () is the theoretical value. 24 201105715 34693pif Specific gravity (23°C) : 1.10 Viscosity (60°C) : 2.03 Pa · s Dispersity: 1.02 (using HLC-8220GPC manufactured by Tosoh Corporation, THF solvent) [Example 3 and Example 4] Instead of hydroquinone As the oxane A and the amounts shown in the following Table 1, the following hydroquinone B and hydrooxane C were used, and respectively, Compound III and Compound IV were obtained in the same manner as in Example 1. Hydroquinone B [Chemical 14]

CH 13 HSi—ΟΙ ch3 ch3 ,! -rSi 〇· ch3 CH3 SiH I ch3 n与4,分散度為1.08 氫矽氧烷C [化 15] ch3 HSi—ΟΙ CH,CH 13 HSi—ΟΙ ch3 ch3 ,! -rSi 〇· ch3 CH3 SiH I ch3 n and 4, the degree of dispersion is 1.08 hydroquinone C [Chemical 15] ch3 HSi—ΟΙ CH,

ch3 Si—ΟΙ CH 丨3 ch3 I 3 SiH I ch3 n与8,分散度為1.06 25 201105715 34693pif 表1 實例 3 " 氢硅氧烷 種類 B C _ 量(g) 370 483 1-烯丙基-3,5-二縮水甘油基異氰尿酸酯 量(g) 200 201 合成化合物 III IV 外觀 無色透明液體 無色透明液Λ" 分散度 1.08 1.06 環氧當量 g/mol 249 322 元素分析值 括弧内:理論值 C 0.4267 (0.4352) 0.3904 (0.4096) Si 0.1155 (0.1696) 0.2033 (0.2177) 0 0.2556 (0.2416) 0.2662 Γ 0.2356) N 0.0812 (0.0846) 0.0613 C 0.0651) H 0.0710 (0.0690) 0078F (0.0719) [實例5〜實例15、比較例1〜比較例7] 組成物的製備 使用行星式混合機(planetary mixer ),以下述表2、 表3、表4所示的組成(質量份)將化合物I〜化合物IV 和硬化劑等充分混合,製備硬化樹脂組成物。這些表中的 各成分如下所述。 化學工業公司製造))進行加成反應所獲得的 化合物(分散度為1.35) 環氧I :以與實例1相同的方法,使卜烯丙基_3,5-二 縮水甘油基異氰尿酸S旨與兩末端具有氫碎燒美的二甲基碎 ”16_M L平均分子量為160,分散度“ 環氧 26 201105715 34693pif 環氧II :異氰尿酸三縮水甘油酯(TEPIC-S :日產化 學工業股份有限公司製造) 硬化劑:4-甲基六氫鄰苯二曱酸酐(Rikacid μη :新 日本理化股份有限公司製造) 硬化催化劑:四級鐫鹽(U-CAT 5003 : San-Apro股份 有限公司製造) 抗氧化劑I:四[3-(3,5-二第三丁基_4_羥基苯基)丙酸] 季戊四醇酯 抗氧化劑II :亞磷酸三苯酯 紫外線吸收劑:2,2,4,4-四曱基-21-氧代-7-氧雜_3,20- 一氮雜一螺[5.1.11.2]·二十一烧-20-丙酸十四烧基醋 螢光體:釔•鋁·石榴石(YAG) 增黏劑:γ-酼基丙基三甲氧基矽烷(KBM8〇3)(信越 化學工業股份有限公司製造) 無機填充劑:二氧化石夕 實例及比較例的硬化物的特性評價 以下述方法來評價組成物的黏度及硬化物的特性。將 樹脂組成物在100°C下加熱1小時,然後在150°c下加熱4 小時,以此來進行硬化。結果示於表2〜表4。 (1 )硬化物外觀 目視觀察硬化物的外觀,目視評價有無變色和透明性。 (2) 硬度 依據JISK6301,對棒狀硬化物進行測定(d硬度)。Ch3 Si—ΟΙ CH 丨3 ch3 I 3 SiH I ch3 n and 8, dispersion degree 1.06 25 201105715 34693pif Table 1 Example 3 " Hydrogensiloxane species BC _ Amount (g) 370 483 1-allyl-3 ,5-diglycidyl isocyanurate amount (g) 200 201 Synthetic compound III IV Appearance colorless transparent liquid colorless transparent liquid Λ Dispersity 1.08 1.06 Epoxy equivalent g/mol 249 322 Elemental analysis value bracketed: theory Value C 0.4267 (0.4352) 0.3904 (0.4096) Si 0.1155 (0.1696) 0.2033 (0.2177) 0 0.2556 (0.2416) 0.2662 Γ 0.2356) N 0.0812 (0.0846) 0.0613 C 0.0651) H 0.0710 (0.0690) 0078F (0.0719) [Example 5~ Example 15 and Comparative Example 1 to Comparative Example 7 Preparation of Compositions Compounds I to IV and the compositions (parts by mass) shown in Table 2, Table 3, and Table 4 below were prepared using a planetary mixer. The hardener or the like is sufficiently mixed to prepare a hardened resin composition. The components in these tables are as follows. Chemical Industry Co., Ltd.)) Compound obtained by addition reaction (dispersion: 1.35) Epoxy I: in the same manner as in Example 1, allyl- 3,5-diglycidyl isocyanuric acid S Dimethyl sulphide 16_M L with a hydrogen-burning beauty at both ends has an average molecular weight of 160, dispersion "Epoxy 26 201105715 34693pif Epoxy II: Triglycidyl isocyanurate (TEPIC-S: Nissan Chemical Industry Co., Ltd. Made by the company) Hardener: 4-methylhexahydrophthalic anhydride (Rikacid μη: manufactured by Nippon Chemical and Chemical Co., Ltd.) Hardening catalyst: quaternary phosphonium salt (U-CAT 5003: manufactured by San-Apro Co., Ltd.) Antioxidant I: Tetra[3-(3,5-di-t-butyl-4-yl-hydroxyphenyl)propanoic acid] Pentaerythritol ester antioxidant II: Triphenyl phosphite UV absorber: 2, 2, 4, 4 -tetradecyl-21-oxo-7-oxa-3,20-aza-helix [5.1.11.2]·21-burning-20-propionic acid tetradecyl vinegar phosphor: 钇• Aluminum garnet (YAG) tackifier: γ-mercaptopropyltrimethoxy decane (KBM8〇3) (manufactured by Shin-Etsu Chemical Co., Ltd.) Inorganic filler : Evaluation of characteristics of cured product of the examples of the oxidized stone and the comparative example The viscosity of the composition and the characteristics of the cured product were evaluated by the following methods. The resin composition was heated at 100 ° C for 1 hour and then heated at 150 ° C for 4 hours to be hardened. The results are shown in Table 2 to Table 4. (1) Appearance of cured product The appearance of the cured product was visually observed, and the presence or absence of discoloration and transparency was visually evaluated. (2) Hardness The rod-shaped cured product was measured (d hardness) in accordance with JIS K6301.

(3) 黏度 X 27 201105715 34693pif 使用東機產業製造的BM型旋轉黏度計來進行測定。 (4) 玻璃化轉變點及膨脹係數 從硬化物上切割出寬度5 mm、厚度4 mm、長度15 mm(3) Viscosity X 27 201105715 34693pif The measurement was carried out using a BM type rotational viscometer manufactured by Toki Sangyo Co., Ltd. (4) Glass transition point and expansion coefficient Cut a width of 5 mm, a thickness of 4 mm, and a length of 15 mm from the hardened material

的試片,使用熱分析裝置EXSTAR6000TMA ( SIITest piece using thermal analysis device EXSTAR6000TMA (SII

NanoTechnology公司製造),以升溫速度5°c/min自_1〇()艺 加熱到300°C為止,將膨脹係數的反曲點作為玻璃化轉變 點(Tg)。另外,根據玻璃化轉變點前後的試樣的延伸率 求出平均膨脹係數。 (5) 彎曲強度、彎曲彈性模量 從硬化物上切割出寬度5 mm、厚度4 mm、長度1〇〇 mm的試片,使用自動繪圖測定裝置AGS_5〇 (島津公司製 造)’依據JIS K6911進行測定。 (6) 光穿透性 使用分光光度計U-4100 (日立高新技術公司製造), 測定1 mm厚的硬化物在波長8〇〇 nm〜3〇〇 nm下的光穿透 率(T0)。另外,同樣地測定將硬化物以15〇。〇 χ400小時加 熱後的光穿透性(τι ),求出Ti/To ( % )。 28 201105715 34693pif 表2 調配組成(質量份) 實例 比較例 5 6 7 8 1 2 化合物I 59.3 化合物II 65.9 化合物III 59.7 化合物IV 65.7 環氧I 66.2 環氧II 37.1 硬化劑 40.7 40.3 40.3 34.3 33.8 62.9 硬化催化劑 0.32 0.32 0.32 0.32 0.32 0.32 增黏劑 0.25 0.25 0.25 0.25 0.25 0.25 外觀 無色透明 無色透明 無色透明 無色透明 無色透明 無色透明 硬度(D硬度) 75 72 50 50 74 87 黏度(Pa · s/25°c ) 0.5 0.5 0.3 0.3 0.9 0.5 玻璃化轉變溫度(°C) 129 120 110 110 137 165 膨脹係數(Tg以下) 129 131 160 160 138 58 膨脹係數(Tg以上) 203 205 204 204 215 130 彎曲強度(MPa) 50 51 44 44 40 110 彎曲彈性模量(MPa) 936 915 900 900 760 1700 光穿透性(初期)% 99 99 98 98 98 98 光穿透性 (150°C/400 小時後)% 92 90 92 92 89 55 亮度 (85°C/l〇〇〇 小時後) 86 82 83 83 85 30The NanoTechnology company manufactures the inflection point of the expansion coefficient as a glass transition point (Tg) at a heating rate of 5 °c/min from _1 〇 () to 300 °C. Further, the average expansion coefficient was obtained from the elongation of the sample before and after the glass transition point. (5) Bending strength and flexural modulus A test piece having a width of 5 mm, a thickness of 4 mm, and a length of 1 mm was cut out from the cured product using an automatic drawing measuring device AGS_5 (manufactured by Shimadzu Corporation) in accordance with JIS K6911. Determination. (6) Light penetration The light transmittance (T0) of a 1 mm thick cured product at a wavelength of 8 〇〇 nm to 3 〇〇 nm was measured using a spectrophotometer U-4100 (manufactured by Hitachi High-Technologies Corporation). Further, the cured product was measured in the same manner at 15 Torr.光 光 Light penetration after heating for 400 hours (τι ), and Ti/To ( % ) was obtained. 28 201105715 34693pif Table 2 Formulation composition (parts by mass) Example Comparative Example 5 6 7 8 1 2 Compound I 59.3 Compound II 65.9 Compound III 59.7 Compound IV 65.7 Epoxy I 66.2 Epoxy II 37.1 Hardener 40.7 40.3 40.3 34.3 33.8 62.9 Hardening catalyst 0.32 0.32 0.32 0.32 0.32 0.32 Tackifier 0.25 0.25 0.25 0.25 0.25 0.25 Appearance Colorless Transparent Colorless Transparent Colorless Transparent Colorless Transparent Colorless Transparent Colorless Transparent Hardness (D Hardness) 75 72 50 50 74 87 Viscosity (Pa · s/25°c ) 0.5 0.5 0.3 0.3 0.9 0.5 Glass transition temperature (°C) 129 120 110 110 137 165 Expansion coefficient (below Tg) 129 131 160 160 138 58 Expansion coefficient (above Tg) 203 205 204 204 215 130 Bending strength (MPa) 50 51 44 44 40 110 Flexural modulus (MPa) 936 915 900 900 760 1700 Light penetration (initial) % 99 99 98 98 98 98 Light penetration (150 ° C / after 400 hours) % 92 90 92 92 89 55 Brightness (after 85°C/l〇〇〇 hours) 86 82 83 83 85 30

29 201105715 34693pif 表3 調配組成(質量份) 實例 比較例 9 10 11 12 13 4 5 化合物I 59.3 69.3 59.3 59.3 69.3 環氧I 66.2 66.2 硬化劑 40.7 40.7 40.7 40.7 40.7 33.8 33.8 硬化催化劑 0.32 0.32 0.32 0.32 0.32 0.32 0.32 抗氧化劑I 0.3 0.3 0.3 0.3 抗氧化劑II 0.3 0.3 紫外線吸收劑 0.3 0.3 0.3 0.3 增黏劑 0.25 0.25 0.25 0.25 0.25 0.25 0.25 外觀 無色透 無色透 無色透 無色透 無色透 無色透 無色透 明 明 明 明 明 明 明 硬度(D硬度) 76 75 74 74 73 94 94 黏度(25°C) 0.5 0.5 0.6 0.6 0.6 1.0 1.0 玻璃化轉變溫度(°C) 129 130 132 129 127 133 136 膨脹係數(Tg以下) 133 129 134 129 131 137 139 膨脹係數(Tg以上) 201 203 200 204 201 216 210 彎曲強度(MPa) 50 51 48 50 46 44 41 彎曲彈性模量(MPa) 931 933 919 922 919 733 711 光穿透性(初期)% 99 98 97 98 97 97 97 光穿透性 94 93 95 96 95 92 93 (l5〇°C/4〇〇 小時後) % 亮度 90 89 93 95 94 89 91 (85°C/1000 小時後) 30 201105715 34693pif 表4 調配組成(質量份) 實例 比較例 14 15 6 7 化合物I 59.3 59.3 環氧I 66.2 66.2 硬化劑 40.7 40.7 33.8 33.8 硬化催化劑 0.32 0.32 0.32 0.32 螢光體 30 30 無機填充劑 30 30 增黏劑 0.25 0.25 0.25 0.25 外觀 黃色 無色透明 黃色 無色透明 硬度(D硬度) 76 76 87 88 黏度(25°C) 18.2 15.1 21.1 14.9 玻璃化轉變溫度(°c) 130 128 167 171 膨脹係數(Tg以下) 132 123 130 122 膨脹係數(Tg以上) 201 195 200 201 彎曲強度(MPa) 51 55 40 47 彎曲彈性模量(MPa) 930 971 701 780 光穿透性(初期)% 35 99 30 97 光穿透性 (150°C/400 小時德)〇/〇 25 94 19 93 亮度 _ (85°C/1000 W、a容铉、 91 90 89 89 LED裝置的製作及評價 在底邊部鍍銀的LED用預成形封裝體(3 mmx3 mmxl min,開口部的直徑為2.6 mm)的此底邊部,使用銀膏(silver P崎)固定InGaN系藍色發光元件。然後,用金屬線將此 3元件連接形卜部電極。之後,將各組成物填充 體^口部’在kktc下硬化i小時,紐在15叱下硬化2 =時而將開π部密封。使用各組成物分別製作2()個難 (8 ) /jnL度循環試驗、高溫高濕下點燈試驗 31 201105715 34693pif 將以所述方法獲得的LED中的10個用於溫度循環試 驗(_4〇°C〜125°C,2000次循環及3000次循環),觀察外 觀。另外,將另外10個LED,用於在高溫高濕下(65°C, 950%RH)以50 mA通電而將LED點亮500小時後,觀察 封裝體介面有無黏著不良、有無龜裂以及有無變色。结果 示於表5、表6。 32 201105715 34693pif 表5 樹脂組成物 實例5 實例6 實例7 實例12 實例14 實例15 溫度循環試驗 〔-40°C 〜125°C) 2000次循環 無不良 無不良 無不良 無不良 無不良 無不良 3000次循環 微小龜 裂 微小龜 裂 無不良 微小龜 裂 無不良 無不良 高溫高濕點燈試驗 〔65°C/95%RH,50mA,放置 500小時) 無不良 無不良 無不良, 無不良 無不良 無不良 表6 樹脂組成物 比較例1 比較例2 比較例4 比較例6 比較例7 溫度循環試驗 〔-4(TC〜125t:) 2000次循環 一部分龜 裂 龜裂 一部分龜 裂 一部分龜 裂 無不良 3000次循環 龜裂 龜裂 龜裂 龜裂 龜裂 高溫高濕點燈試驗 〔65°C/95%RH,50 mA,放置 無不良 变色 無不良 無不良 無不良 500小時) 根據各表所示可知,和比較例的樹脂組成物相比較, 本發明的包含分子量分佈得到控制的矽酮改質環氧化合物 的環氧樹脂組成物在溫度循環試驗中耐龜裂性優異。而 且,在高溫高濕下點燈試驗中也良好,耐熱性優異。 [產業上的可利用性] ?ι本發明的光半導體密封用樹脂組成物的耐熱性、耐龜 裂性優異,適合用來密封光半導體元件。 [S1 33 201105715 34693pif 明作任何IKS發==:=非對本發 貝,在不脫離本發明技術方案範圍内,f=專業的技術人 Ξΐ:及出些許的更動或修飾為等 發明的技術實質對以上實:據本 ,與修飾,均仍屬於本發明技術方案‘二改、專同變 【圖式簡單說明】 _圍内。 無 【主要元件符號說明】 益 #«»> 3429 201105715 34693pif Table 3 Formulation composition (parts by mass) Example Comparative Example 9 10 11 12 13 4 5 Compound I 59.3 69.3 59.3 59.3 69.3 Epoxy I 66.2 66.2 Hardener 40.7 40.7 40.7 40.7 40.7 33.8 33.8 Hardening Catalyst 0.32 0.32 0.32 0.32 0.32 0.32 0.32 Antioxidant I 0.3 0.3 0.3 0.3 Antioxidant II 0.3 0.3 UV Absorber 0.3 0.3 0.3 0.3 Adhesive 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Appearance Colorless, Colorless, Colorless, Colorless, Colorless, Colorless, Clear, Colorless, Clear, Clear, Clear ( D hardness) 76 75 74 74 73 94 94 Viscosity (25 ° C) 0.5 0.5 0.6 0.6 0.6 1.0 1.0 Glass transition temperature (°C) 129 130 132 129 127 133 136 Expansion coefficient (below Tg) 133 129 134 129 131 137 139 Expansion coefficient (above Tg) 201 203 200 204 201 216 210 Bending strength (MPa) 50 51 48 50 46 44 41 Flexural modulus (MPa) 931 933 919 922 919 733 711 Light penetration (initial) % 99 98 97 98 97 97 97 Light penetrability 94 93 95 96 95 92 93 (after l5〇°C/4〇〇 hours) % Degree 90 89 93 95 94 89 91 (85 ° C / 1000 hours later) 30 201105715 34693pif Table 4 Formulation composition (parts by mass) Example Comparative Example 14 15 6 7 Compound I 59.3 59.3 Epoxy I 66.2 66.2 Hardener 40.7 40.7 33.8 33.8 Hardening catalyst 0.32 0.32 0.32 0.32 Phosphor 30 30 Inorganic filler 30 30 Tackifier 0.25 0.25 0.25 0.25 Appearance Yellow colorless transparent yellow Colorless transparent hardness (D hardness) 76 76 87 88 Viscosity (25 ° C) 18.2 15.1 21.1 14.9 Glass Transformation temperature (°c) 130 128 167 171 Expansion coefficient (below Tg) 132 123 130 122 Expansion coefficient (above Tg) 201 195 200 201 Bending strength (MPa) 51 55 40 47 Flexural modulus (MPa) 930 971 701 780 Light penetration (initial)% 35 99 30 97 Light penetration (150°C/400 hours) 〇/〇25 94 19 93 Brightness _ (85°C/1000 W, a volume, 91 90 89 89 LED device fabrication and evaluation In the bottom edge of a silver-plated LED pre-molded package (3 mm x 3 mm x min, 2.6 mm in diameter), silver paste (silver P) is used to fix InGaN. Blue light-emitting element . Then, the three elements are connected to the electrode by a metal wire. Thereafter, each of the composition-filled body portions was hardened for 1 hour under kktc, and the new layer was hardened at 15 2 2 = when the π portion was sealed. 2 () difficult (8 ) / jnL degree cycle test, high temperature and high humidity down lighting test 31 201105715 34693pif were used for each composition, and 10 of the LEDs obtained by the method were used for temperature cycle test (_4〇) °C~125°C, 2000 cycles and 3000 cycles), observe the appearance. In addition, another 10 LEDs were used to illuminate the LEDs at 50 mA for 500 hours under high temperature and high humidity (65 ° C, 950% RH), and then observe whether the package interface is poorly adhered, cracked, and presence or absence. Discoloration. The results are shown in Tables 5 and 6. 32 201105715 34693pif Table 5 Resin Composition Example 5 Example 6 Example 7 Example 12 Example 14 Example 15 Temperature Cycling Test [-40 ° C ~ 125 ° C) 2000 cycles without defects, no defects, no defects, no defects, no defects, no defects, 3,000 times Cycling micro cracks micro cracks no bad micro cracks no bad no bad high temperature high humidity lighting test [65 ° C / 95% RH, 50 mA, placed for 500 hours) No bad no bad no bad, no bad no bad no bad Table 6 Resin Composition Comparative Example 1 Comparative Example 2 Comparative Example 4 Comparative Example 6 Comparative Example 7 Temperature Cycling Test [-4 (TC~125t:) 2000 cycles of a part of the cracked crack, part of the crack, a part of the crack, no bad 3,000 times Circulating crack cracking crack cracking crack high temperature high humidity lighting test [65 ° C / 95% RH, 50 mA, no bad discoloration, no bad, no bad, no bad 500 hours) According to the table, we can see The epoxy resin composition of the present invention comprising an anthrone-modified epoxy compound having a controlled molecular weight distribution is resistant to cracking in a temperature cycle test as compared with the resin composition of the comparative example. Excellent. Moreover, it is also good in the lighting test under high temperature and high humidity, and is excellent in heat resistance. [Industrial Applicability] The resin composition for optical semiconductor sealing of the present invention is excellent in heat resistance and crack resistance, and is suitable for sealing an optical semiconductor element. [S1 33 201105715 34693pif clarified as any IKS issued ==:= not in the hair of the present invention, without departing from the scope of the technical solution of the present invention, f = professional technical personnel: and a little change or modification to the technical essence of the invention To the above: according to the present, and the modification, still belong to the technical scheme of the present invention, the second modification, the specialization change [the simple description of the schema] _ circumference. None [Key component symbol description] Benefit #«»> 34

Claims (1)

201105715 34693pif 七、申請專利範圍·· 1 · 一種光半導體密封用樹脂組成物,其特徵在於包含 下述(A)成分、(B)成分及(C)成分: (A) 1分子中具有兩個以上的環氧基,以下述式(!) 來表示,且分散度為1.0〜1.2的矽酮改質環氧化合物1〇〇 質量份 ° R1 R1 R1 r2—si~~ΟΙ R1 I rl i -Si-O- 1 ~Si—Ο — Ι I R1 a R2 [化1] R1 'S'〜R2 (1) ’b R1 (R—互相獨立,為碳數丨〜1()的被取代或者未被取代 的-價烴基,R2為以下述式⑵或式(3)所表示的基, a、b為選自整數〇〜20中的一個以上整數) [化2]201105715 34693pif VII. Patent Application Range · 1 · A resin composition for optical semiconductor sealing, which comprises the following components (A), (B) and (C): (A) Two molecules in one molecule The above epoxy group is represented by the following formula (!), and the fluorenone modified epoxy compound having a degree of dispersion of 1.0 to 1.2 is 1 part by mass. R1 R1 R1 r2—si~~ΟΙ R1 I rl i - Si-O- 1 ~Si—Ο — Ι I R1 a R2 [Chemical 1] R1 'S'~R2 (1) 'b R1 (R—independent of each other, carbon number 丨~1() is replaced or not a substituted-valent hydrocarbon group, R2 is a group represented by the following formula (2) or (3), and a and b are one or more integers selected from the integer 〇 20 20) (2) [化3](2) [Chemical 3] (3) ^一只里T刀、〜1(K}質晉 ⑹硬化催化齊"目對於上述⑷二上述 201105715 34693pif 成分的合量100質量份為〇〇5質量份〜3質量份。 组成物如:項、所述的光半體密封用樹脂 斗ί 對边(A)成分與上述(b)成分的合 A成7:質1份,以下述f量份而含有下述 (E) 抗氧化劑 (F) 紫外線吸收劑 (G) 螢光體 (H) 增黏劑 (I) 無機填充劑 (D) -分子令具有兩個以上環氧基的環氧樹脂 0.1質量份〜90質量份 0·01質量份〜1.0質量份 〇.〇1質量份〜1.0質量份 0·1質量份〜1〇〇質量份 0.01質量份〜丨〇質量份 .,^ 0,01質量份〜100質量份。 3. 如申請專利範圍第1 、 密封用樹驗祕,射上述(=^項所賴光半導體 4, Α^ 逑(Β)硬化劑為酸酐。 4.如申4專利範圍第丨項至 半導體密封用樹脂組成物,其中上、;^任—項所述的光 鱗鹽。 ”述(c)硬化催化劑為 5·如申請專利範圍第2項至篦 半導體密封卿旨組成物,其丄項中任—項所述的光 兩個以上環氧基的環氧樹脂為脂‘ D —分子中具有 氰尿酸S旨環的環氧樹脂。 <、魏_旨以及含有異 6. 如申請專利範圍第2 半導體密封用樹脂組成物,其/上5二中任:項所述的光 阻酚系抗氧化劑。 述(E)抗氧化劑為受 7. 如申請專利範圍第2項至第Μ中任1所述㈣ 36 201105715 34693pif 半導體密封用樹脂組成物,其中上述(E)抗氧化劑為磷 系抗氧化劑。 8. 如申請專利範圍第2項至第7項中任一項所述的光 半導體密封用樹脂組成物,其中上述(F)紫外線吸收劑 為受阻胺系紫外線吸收劑。 9. 如申請專利範圍第2項至第8項中任一項所述的光 半導體密封用樹脂組成物,其中上述(G)增黏劑為巯基 系石夕炫偶聯劑。(3) ^ One inner T knife, ~1 (K} quality Jin (6) hardening catalyst", the total amount of 100 parts by mass of the above-mentioned (4) two above 201105715 34693pif components is 质量 5 parts by mass to 3 parts by mass. The material of the above-mentioned (b) component is the following: (E) Antioxidant (F) Ultraviolet absorber (G) Phosphor (H) Tackifier (I) Inorganic filler (D) - Molecular weight of epoxy resin having two or more epoxy groups 0.1 parts by mass to 90 parts by mass 0. 01 parts by mass to 1.0 part by mass of 〇. 〇 1 part by mass to 1.0 part by mass of 0. 1 part by mass to 1 part by mass of 0.01 part by mass to 丨〇 part by mass., ^ 0, 01 parts by mass to 100 parts by mass 3. If the patent application scope is 1, the seal tree is used for the secret, the above (=^ item of the light semiconductor 4, Α^ 逑 (Β) hardener is an acid anhydride. 4. If the patent scope of the application of the fourth paragraph to a resin composition for semiconductor encapsulation, wherein the photo-scale salt described in the above paragraph is: (c) the hardening catalyst is 5; as claimed in the second item to the semiconductor sealing The epoxy resin having two or more epoxy groups as described in any one of the above items is an epoxy resin having a ring of cyanuric acid S in the molecule. And a resin composition for semiconductor sealing according to the second patent application, which is a photo-resistance phenol-based antioxidant according to the above item: (E) an antioxidant is a patent. The invention is the resin composition for semiconductor encapsulation, wherein the (E) antioxidant is a phosphorus-based antioxidant. 8. In the second to seventh items of the patent application, the scope of the invention is as described in any one of claims 2 to 36. The resin composition for sealing a photo-semiconductor according to any one of claims 2 to 8, wherein the (F) ultraviolet absorber is a hindered amine-based ultraviolet absorber. A resin composition for sealing a photo-semiconductor, wherein the (G) tackifier is a fluorenyl-based Shixia coupling agent. 37 201105715 34693pif 四、 指定代表圖: (一) 本案之指定代表圖.無 (二) 本代表圖之元件符號簡單說明: 無 五、 本案若有化學式時,請揭示最能顯示發明特徵 的化學式: R1 I R1 I R1 I , Ri I _ I R2-Si—0— | I ~Si 〇-1 I -Si-O- ] I ^ Si R2 (I ) I R1 1 R1 a I R2 I b R1 201105715 34693ριίΊ 爲第99118393號中文說明書無劃線修正頁 修正日期:99年8月23日 六、發明說明: 【發明所屬之技術領域】 本發明關於-種用來密封光半導體元件,對财熱試驗 優異並且特別是耐龜裂性優異的矽_ (siHc〇ne)改質環氧 樹脂組成物。 ' 【先前技術】 以往,用來密封光半導體元件的光半導體元件密封樹 脂廣泛地使用透明環氧樹脂組成物。這種光半導體穷封用 環氧樹脂組成物的成分通常含有脂環族環氧樹脂、硬化劑 和硬化催化劑,藉由利用洗鑄成形(Castingm〇lding)、轉 移成形(transfer molding)等成形方法,使所述光半導體 密封用環氧樹脂組成物流入到配置著光半導於 中並硬化,而將光半導體元件密封(專利 獻2 )。 但是,近來隨著藍色發光二極體(light_emkting (hode’LED)、白色LED的亮度、功率越來越高,使用常 規的透明環氧樹脂加以密封的LED元件出現隨著時間經 過因波長較短的藍色光或者紫外線而變色(黃變 (yellowing))的問題。而且吸水率高、耐濕耐久性 題也被指出。 U 、因此,本領域技術人員也提出了一種光半導體元件的 被覆保護用樹月旨組成物,這種光半導體元件的被覆保護用 樹脂組含:—分子中含有至少兩個和腦基^ 應性的碳碳雙鍵的有機化合物或卵樹脂,—分子中含有 201105715 34〇yjpirl 爲第99118393號中文說明書無劃線修正頁修正日期:99年8月23日 R1 R1 R2—Si—Ο—Si—Ο R1 R1 a R1 I. SH〇· I kR2 R1i 2 -Si—R2 l b R1 (1) R2是以下述式(2)或式(3)來表示。 [化5]37 201105715 34693pif IV. Designated representative map: (1) The designated representative figure of the case. None (2) The symbolic symbol of the representative figure is simple: No. 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: R1 I R1 I R1 I , Ri I _ I R2-Si—0— | I ~Si 〇-1 I -Si-O- ] I ^ Si R2 (I ) I R1 1 R1 a I R2 I b R1 201105715 34693ριίΊ Japanese Patent Specification No. 99118393 No-line correction page Revision date: August 23, 1999. VI. Description of the Invention: The present invention relates to a method for sealing an optical semiconductor element, which is excellent for the heat test. In particular, 矽_(siHc〇ne) modified epoxy resin composition excellent in crack resistance. [Prior Art] Conventionally, a transparent epoxy resin composition has been widely used as an optical semiconductor element sealing resin for sealing an optical semiconductor element. The component of the epoxy resin composition for photo-semiconductor encapsulation usually contains an alicyclic epoxy resin, a hardener, and a hardening catalyst, and is formed by a molding method such as Casing Molding or Transfer Molding. The optical semiconductor sealing epoxy resin composition is introduced into the light semiconducting layer and hardened, and the optical semiconductor element is sealed (patent 2). However, recently, as the brightness and power of the blue-emitting diode (light_emkting (hode'LED) and white LED are getting higher and higher, the LED element sealed with the conventional transparent epoxy resin appears to have a wavelength over time. A problem of short blue light or ultraviolet light discoloration (yellowing), and high water absorption and moisture durability durability are also pointed out. U. Therefore, those skilled in the art have also proposed coating protection of an optical semiconductor element. The resin composition for coating and protecting the optical semiconductor element comprises: an organic compound or an egg resin containing at least two carbon-carbon double bonds and a brain-based compound in the molecule, and the molecule contains 201105715 34〇yjpirl is the Chinese manual of No. 99118393. There is no scribe correction page. Revision date: August 23, 1999 R1 R1 R2—Si—Ο—Si—Ο R1 R1 a R1 I. SH〇· I kR2 R1i 2 —Si— R2 lb R1 (1) R2 is expressed by the following formula (2) or formula (3). (2) [化6](2) [Chem. 6] (3) R1互相獨立,為碳數1〜10的一價烴基,具體說來有 曱基、乙基、丙基、丁基等烷基,環戊基、環己基、苯基、 冰片基(norbornyl)等環烧基,苯基等芳基等,另外還可 以例示這些基被鹵基、氨基等取代所得的3,3,3-三氟丙基、 3-羥基丙基、3-氨基丙基等。這些一價烴基中,較佳為甲 基、苯基,並且較佳為全部R1的90莫耳%以上為曱基。 11 201105715 34693piil 爲第99118393號中文說明書無劃線修正頁 修正日期:99年8月23日 式(1)中’ a、b為選自整數〇〜20中的一個以上的 整數,較佳為a、b為0〜1〇的整數。如果a、b超過所述 上限值,則難以分德,所以不佳。 含有可以具有取代基的有機曱矽烧氧基的碳數1〜12 的烴基例如可以列舉··可以具有取代基的有機甲矽烷氧基 與亞曱基(methylene )、亞乙基(ethylene )、亞丙基 (propylene)、亞丁基(butyiene)等鍵結所成的基等。 此(A)矽酮改質環氧化合物例如以下述式來表示。 [化7](3) R1 is independent of each other and is a monovalent hydrocarbon group having 1 to 10 carbon atoms, specifically, an alkyl group such as an alkyl group, an ethyl group, a propyl group or a butyl group, a cyclopentyl group, a cyclohexyl group, a phenyl group, and a borneol group ( Orbornyl group, an aryl group such as a phenyl group, etc., and 3,3,3-trifluoropropyl, 3-hydroxypropyl, 3-aminopropane which are substituted by a halogen group, an amino group or the like. Base. Among these monovalent hydrocarbon groups, a methyl group, a phenyl group, and preferably 90 mol% or more of all R1 are a mercapto group. 11 201105715 34693piil is the Chinese manual of No. 99118393. There is no scribe correction page. Correction date: In the formula (1) of August 23, 1999, a and b are one or more integers selected from the integer 〇 〜 20, preferably a and b are integers of 0 to 1 。. If a and b exceed the above upper limit value, it is difficult to distinguish the Germans, which is not preferable. Examples of the hydrocarbon group having 1 to 12 carbon atoms which may have an organic hydrazine alkoxy group which may have a substituent include an organomethane alkoxy group which may have a substituent, a methylene group, an ethylene group, and the like. A group formed by bonding such as propylene or butyiene. The (A) anthrone-modified epoxy compound is represented, for example, by the following formula. [Chemistry 7] 以式⑴所表示的化合物可以利用下述方式而容易地 製造·相胁藉由分離蒸㈣者分鱗分散度控制為卜 1.2,理想岐WU的町述式(4)所表示的兩末端具 有氫矽烷基(hydrosilyl)的矽氧烷}莫耳,卜烯丙基 二縮水甘油基異氰尿酸醋、或者一氧化乙烯^己’稀 (vinylcydohexene m〇n〇xide)(即 環氧斗乙烯基環己 烧)為1.5〜2.5莫耳,較佳為2·〇〜21莫耳,並使用麵催 化劑等氫化矽烷化催化劑,加熱到卯它〜丨知力使所述化 合物進行反應。 12 201105715 爲第99118393號中文專利範圍無劃線修正本 修正日期:99年8月23日 ,,顰 * ,uc| _ 1.-種光半導_封 下述(A)成分、(B)忠八衬知紐成物,其特徵在於 (a”分子中具有兩 二成,.、、. 來表示’且分散度為1.0〜 、%氧基,以下述式 質量份 .·的石夕_改質環氧化合物 [化1] R1 | R1 | . R1 R2-Si—Ο ~Si—Ο — I r f Ι Ι -Sj-〇. R1 R1」 a i R2 b R1 I '|i—R2 R1The compound represented by the formula (1) can be easily produced by the following method. The phase is controlled by the separation of the vapor (four), and the degree of dispersion of the scale is controlled to 1.2, and the two ends of the formula (4) of the ideal 岐W have Hydrosilyl oxime} Mohr, allyl diglycidyl isocyanurate, or ethylene cyanohexene m〇n〇xide (ie, epoxy propylene) Cyclohexene) is 1.5 to 2.5 moles, preferably 2 Å to 21 moles, and is hydrogenated with a sulfonation catalyst such as a surface catalyst, and heated to the temperature to cause the compound to react. 12 201105715 The Chinese patent scope of No. 99118393 is not underlined. This revision date: August 23, 1999, 颦*, uc| _ 1.- kinds of light semi-conducting _ sealing the following (A) components, (B) Zhongba lining, which is characterized by having two or two in (a) molecules, ., . . to indicate 'and the degree of dispersion is 1.0~, % oxy, with the following formula mass parts. · Shi Xi _ Modified epoxy compound [1] R1 | R1 | . R1 R2-Si—Ο ~Si—Ο — I rf Ι Ι -Sj-〇. R1 R1” ai R2 b R1 I '|i—R2 R1 ⑴ R互相獨立,為;5炭赵 -價烴基,R2為以下述^ 的被取代或者未被取代的 b為選自整數0〜20中^彻或式⑶所表示的基,a、 [化2] 中的一個以上整數(1) R is independent of each other; is 5; charcoal-valent hydrocarbon group; R2 is a substituted or unsubstituted b which is selected from the group consisting of an integer of 0 to 20 or a group represented by the formula (3), a, More than one integer in 2] (2) [化3](2) [Chemical 3] (3) (B)硬化齊j 0.1質量份〜100質量份 ⑹硬化催化齊j才目對於上述(A)成分與上述(B) 35 20U05715 修正日期,年叩23日 34by3pitV 爲第991懸3號中文專利範圍無劃線修正本 成分的合計量100質量份為0.05質量份〜3質量份。 2.如申請專利範圍第1頊所述的光半導體密封用樹月旨 組成物,其中相對於上述(A)成分與上述(B)成分的合 計量100質量份,以下述質量份而含有下述(D)成分^ (I)成分: (D) —分子中具有兩個以上環氧基的環氧樹脂 〇·!質量份〜90質量份 (E) 抗氧化劑 〇.〇1質量份〜1.0質量份 (G) 螢光體 (H) 增黏劑 (I) 無機填充劑 (F) 紫外線吸收劑 0.01質量份〜1.〇質量份 〇 0.1質量份〜100質量份 0.01質量份〜1.0質量份 0.01質量份〜100質量份。 一 3.如申請專利範圍第1項或是第2項所述的光半導體 密封用樹脂組成物,其中上述硬化劑為酸酐。 一 4.如申請專利範圍第丨項或是第2項所述的光 密封用樹驗成物,其中上述(c)硬化催化劑為鱗越。 5.如中請專利範圍第2_述的光 ❹ ,其中上述(D) 一分子中具有兩個以== 環氧樹脂為脂環族環氧樹脂或是含有 衣土’ 樹脂。 魏樹U心有異乱尿_旨環的環氧 如中請專利範圍第2項所述的光半導體密封用触 組成物,其中上述⑻抗氧化劑為受阻紛系抗=用^曰 7.如申請專利範圍第2項所 導俨 劑。 組成二其:r⑻抗氧化劑 .申以觸圍第2項所述的光轉體密封用樹脂 36 201105715 Moyjpifl 爲第99118393號中文專利範圍無劃線修正本 修正日期:99年8月23日 組成物,其中上述(F)紫外線吸收劑為受阻胺系紫外線 吸收劑。 9.如申請專利範圍第2項所述的光半導體密封用樹脂 組成物,其中上述(G)增黏劑為巯基系矽烷偶聯劑。 〇 ❹ 37 201105715 . 34t)yipifl Ά 爲第99118393號中文說明書無劃線修正頁修正日期:99年8月23曰J ·-. Λν .· 四、指定代表圖: (一) 本案之指定代表圖:無 (二) 本代表圖之元件符號簡單說明: 益 五、本案若有化學式時,請揭示最能顯示發明特徵 的化學式:(3) (B) Hardening j 0.1 parts by mass to 100 parts by mass (6) Hardening catalysis for the above (A) component and the above (B) 35 20U05715 Revision date, year 23 34 34by3pitV is the 991 hang No. 3 In the Chinese patent range, 100 parts by mass of the total amount of the components is corrected to be 0.05 parts by mass to 3 parts by mass. 2. The composition of the optical semiconductor sealing according to the first aspect of the invention, wherein the total amount of the component (A) and the component (B) is 100 parts by mass, and the following parts are contained in the following parts by mass; (D) Component ^ (I) Component: (D) - Epoxy resin having two or more epoxy groups in the molecule ! · parts by mass to 90 parts by mass (E) Antioxidant 〇. 〇 1 part by mass - 1.0 Parts by mass (G) Phosphor (H) Adhesive (I) Inorganic filler (F) Ultraviolet absorber 0.01 parts by mass to 1. 〇 Parts by mass 〇 0.1 parts by mass to 100 parts by mass 0.01 parts by mass to 1.0 parts by mass 0.01 parts by mass to 100 parts by mass. The resin composition for optical semiconductor sealing according to the first or second aspect of the invention, wherein the hardener is an acid anhydride. 4. The photo-sealing tree test composition of claim 2, wherein the (c) hardening catalyst is a scale. 5. The optical enthalpy according to the second aspect of the patent, wherein two of the above (D) molecules have an epoxy resin as an alicyclic epoxy resin or a rubber-containing resin. Wei Shu U heart has a disordered urine _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Apply for the bismuth agent in item 2 of the patent scope. Composition 2: r (8) Antioxidant. The resin for sealing the light-spinning body described in item 2 of the second paragraph 201105715 Moyjpifl is the Chinese patent scope of No. 99118393. No slash correction. Revision date: August 23, 1999 Composition The above (F) ultraviolet absorber is a hindered amine-based ultraviolet absorber. 9. The resin composition for optical semiconductor sealing according to claim 2, wherein the (G) tackifier is a fluorenyl decane coupling agent. 〇❹ 37 201105715 . 34t) yipifl Ά is the Chinese manual of No. 99118393. There is no scribe correction page. Revision date: August 23, 1999 ·J ·-. Λν .· IV. Designated representative map: (1) Designated representative map of the case : None (2) A brief description of the symbol of the representative figure: Benefit 5: If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: R1 R1 R1 R1 R2-SI—0一 | Ll -Si-cH I rl -Si-O- I I 2 —Si—R2 I I R1 I lr1 a f R2 I b R1R1 R1 R1 R1 R2-SI—0_ | Ll -Si-cH I rl -Si-O- I I 2 —Si—R2 I I R1 I lr1 a f R2 I b R1
TW099118393A 2009-06-12 2010-06-07 Resin composition for sealing optical semiconductor TWI465487B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009141522A JP5305452B2 (en) 2009-06-12 2009-06-12 Resin composition for optical semiconductor element sealing

Publications (2)

Publication Number Publication Date
TW201105715A true TW201105715A (en) 2011-02-16
TWI465487B TWI465487B (en) 2014-12-21

Family

ID=43336683

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099118393A TWI465487B (en) 2009-06-12 2010-06-07 Resin composition for sealing optical semiconductor

Country Status (4)

Country Link
JP (1) JP5305452B2 (en)
KR (1) KR101682717B1 (en)
CN (1) CN101921456B (en)
TW (1) TWI465487B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI627223B (en) * 2012-05-31 2018-06-21 Lg伊諾特股份有限公司 Epoxy resin composition and light emitting apparatus

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5380325B2 (en) * 2010-02-18 2014-01-08 日東電工株式会社 Thermosetting resin composition for optical semiconductor element sealing, cured product thereof, and optical semiconductor device obtained using the same
JP5489280B2 (en) * 2010-04-07 2014-05-14 信越化学工業株式会社 Epoxy composition for optical semiconductor encapsulation
KR20120078606A (en) * 2010-12-31 2012-07-10 제일모직주식회사 Encapsulation material and electronic device including the same
JP5781511B2 (en) 2011-02-04 2015-09-24 株式会社Adeka Compound having hindered amine skeleton and resin composition
JP2012180498A (en) * 2011-02-10 2012-09-20 Jsr Corp Curable composition, optical semiconductor-encapsulating agent, lens, and lens for optical pickup of blu-ray disc (r) drive
KR101870304B1 (en) * 2011-02-18 2018-06-22 제이엔씨 주식회사 Curable resin composition and colour conversion material using same
JP6061471B2 (en) * 2011-09-16 2017-01-18 積水化学工業株式会社 Optical semiconductor device and method for manufacturing optical semiconductor device
JP5958107B2 (en) * 2012-06-15 2016-07-27 デクセリアルズ株式会社 Light-reflective anisotropic conductive adhesive and light-emitting device
US8822593B2 (en) * 2012-06-22 2014-09-02 Shin-Etsu Chemical Co., Ltd. Curable resin composition, hardened material thereof, and optical semiconductor apparatus
JP2014037528A (en) * 2012-07-19 2014-02-27 Dexerials Corp Light reflecting anisotropic conductive adhesive, and light-emitting device
CN102964776A (en) * 2012-10-25 2013-03-13 上纬(上海)精细化工有限公司 Packaging resin composition
JP6003763B2 (en) * 2012-10-30 2016-10-05 デクセリアルズ株式会社 Thermosetting resin composition, light reflective anisotropic conductive adhesive, and light emitting device
KR102007194B1 (en) * 2013-02-14 2019-08-05 엘지이노텍 주식회사 Epoxy resin composite and light emitting apparatus using the same
KR101405532B1 (en) * 2013-10-29 2014-06-20 주식회사 네패스신소재 Epoxy resin composition, And Photosemiconductor device having the same
JP6115457B2 (en) * 2013-12-05 2017-04-19 デクセリアルズ株式会社 Process for producing glycidyl isocyanuryl-modified polysiloxane
KR101731681B1 (en) 2014-12-12 2017-05-02 삼성에스디아이 주식회사 Phosphonium compound, epoxy resin composition comprising the same and semiconductor device prepared from using the same
JP6332636B2 (en) * 2015-03-26 2018-05-30 豊田合成株式会社 Light emitting device and sealing layer for the light emitting device
JP6483588B2 (en) * 2015-07-14 2019-03-13 四国化成工業株式会社 Isocyanurate compound, resin composition and use thereof
JPWO2017099193A1 (en) * 2015-12-11 2018-09-27 日本化薬株式会社 Epoxy resin composition, epoxy resin composition molded body, cured product, and semiconductor device
JP7465703B2 (en) 2020-03-30 2024-04-11 日東電工株式会社 Resin molding for sealing optical semiconductors and method for producing same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4082719A (en) 1976-02-23 1978-04-04 Dow Corning Corporation Silicone epoxy curable compositions
JPH03241338A (en) 1990-02-20 1991-10-28 Fuji Photo Film Co Ltd Silver halide color photographic sensitive material
JPH0725987A (en) 1993-07-14 1995-01-27 Nitto Denko Corp Epoxy resin composition for sealing optical semiconductor
JP3909826B2 (en) 2001-02-23 2007-04-25 株式会社カネカ Light emitting diode
JP3910080B2 (en) 2001-02-23 2007-04-25 株式会社カネカ Light emitting diode
JP2002314139A (en) 2001-04-09 2002-10-25 Toshiba Corp Light emitting device
JP2002314143A (en) 2001-04-09 2002-10-25 Toshiba Corp Light emitting device
JP4074796B2 (en) * 2002-09-10 2008-04-09 東レ・ダウコーニング株式会社 Epoxy resin composition and semiconductor device
JP4421192B2 (en) * 2003-02-10 2010-02-24 スタンレー電気株式会社 Sealing resin composition for light emitting diode and surface mount light emitting diode using the same
JP2004292706A (en) * 2003-03-27 2004-10-21 Nof Corp Optical semiconductor sealing epoxy resin composition, and optical semiconductor device
JP2005263869A (en) 2004-03-16 2005-09-29 Nagase Chemtex Corp Resin composition for sealing optical semiconductor
JP4198091B2 (en) * 2004-06-02 2008-12-17 旭化成株式会社 Resin composition for sealing light emitting device
JP4541842B2 (en) * 2004-11-10 2010-09-08 信越化学工業株式会社 Self-adhesive organopolysiloxane composition
JP4754240B2 (en) * 2005-03-03 2011-08-24 京セラケミカル株式会社 Epoxy resin composition and optical semiconductor device
JP2006328231A (en) * 2005-05-26 2006-12-07 Nagase Chemtex Corp Resin composition for encapsulating optical element
JP2007009086A (en) * 2005-06-30 2007-01-18 Toagosei Co Ltd Cation curable composition
JP2007106798A (en) * 2005-10-11 2007-04-26 Jsr Corp Composition for optical semiconductor encapsulation, optical semiconductor encapsulating agent and manufacturing process of composition for optical semiconductor encapsulation
JP2008202008A (en) * 2007-02-22 2008-09-04 Nagase Chemtex Corp Sealing resin composition for optical element
JP5032236B2 (en) * 2007-08-21 2012-09-26 株式会社カネカ Method for producing compound having SiH group and curable composition
JP4841529B2 (en) * 2007-10-22 2011-12-21 旭化成ケミカルズ株式会社 Modified polysiloxane
JP5353629B2 (en) * 2008-11-14 2013-11-27 信越化学工業株式会社 Thermosetting resin composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI627223B (en) * 2012-05-31 2018-06-21 Lg伊諾特股份有限公司 Epoxy resin composition and light emitting apparatus

Also Published As

Publication number Publication date
KR101682717B1 (en) 2016-12-05
KR20100133898A (en) 2010-12-22
CN101921456B (en) 2013-07-03
JP2010285563A (en) 2010-12-24
JP5305452B2 (en) 2013-10-02
CN101921456A (en) 2010-12-22
TWI465487B (en) 2014-12-21

Similar Documents

Publication Publication Date Title
TW201105715A (en) Resin composition for sealing optical semiconductor
US8710158B2 (en) Epoxy composition for encapsulating an optical semiconductor element
TWI433875B (en) Diglygidylisocyanurylmodified organopolysiloxane and composition including the organopolysiloxane
US8044128B2 (en) White heat-curable silicone/epoxy hybrid resin composition for optoelectronic use, making method, premolded package, and LED device
US8237189B2 (en) Heat-curable silicone resin-epoxy resin composition, and premolded package molded from same
TWI410461B (en) Polyoxymethylene-containing hardening composition containing polycyclic hydrocarbon groups
TWI504683B (en) A hardened silicon oxide composition, a hardened product thereof, and an optical semiconductor device
US8133957B2 (en) Resin composition for encapsulating optical semiconductor element
TWI441847B (en) Epoxy-Polyimide Oxygen Mixed Resin Composition for Photonic Semiconductor Component Sealing and Tablets for Transparent Forming
JP2005314591A (en) Epoxy-silicone mixed resin composition and luminescent semiconductor device
US20150340299A1 (en) Curable resin composition, and cured product of same
TW201215635A (en) High adhesion silicone resin composition and optical semiconductor device using the composition
JP2012057006A (en) Epoxy resin composition, method of manufacturing the same, and semiconductor device using the same
TW201506089A (en) Curable resin composition and semiconductor device obtained using same
TWI401270B (en) Epoxy. A polysiloxane mixed resin composition, and a light emitting semiconductor device
TW201604240A (en) Curable resin composition, cured product, sealing material, and semiconductor device
KR20160119762A (en) Curable composition, semiconductor device, and ester-bond-containing organic silicon compound
JP2012241136A (en) Silicone-modified epoxy resin composition, photosemiconductor sealing composition and photosemiconductor element adhesive containing the resin composition
KR101720220B1 (en) Organopolysiloxane composition
TW201420680A (en) Curable composition

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees