201105442 六、發明說明： 【發明所屬之技術領域】 本發明關於在電子電路基板等非鐵系被削材之穿孔加 工等所使用的穿孔工具，施予披覆的非晶質碳披膜以及穿 孔工具。 【先前技術】 習知作爲金屬切削工具之披覆用的硬質耐磨耗披膜係 使用 TiN、TiCN、TiAIN 等。 特別是，以專利文獻1、2爲代表的Ti A IN系披膜， 係於TiN添加A1將硬度與耐熱性予以改良者，基於良好 之耐磨損性，而廣泛被使用於針對含有燒結鋼的鐵鋼材料 進行加工的穿孔工具用硬質披膜。 另外，最近適用於鋁合金或鈦（Ti)、鎂（Mg)、 銅等之非鐵系被削材，作爲具有耐磨損性與耐溶著性的披 膜之非晶質碳披膜亦被實用化，被覆蓋於鑽具（drill )或 銑削具（end mill )、刀刃更換型切削晶片等之切削工具 予以使用。 專利文獻1 :特開昭6 2 - 5 6 5 6 5號公報 專利文獻2 :特開平2 - 1 94 1 5 9號公報 【發明內容】 (發明所欲解決之課題） 但是，電子電路基板（印刷電路基板）係由玻璃纖，維 -5- 201105442 、樹脂、銅箔等構成之一種復合構造材，於電路製程中被 施予多數之穿孔加工（鑽孔’ drilling )。最近之電子電 路基板電氣特性被提升之同時，難以鑽孔之材料（難削材 料）變多。另外，伴隨電路密度之提升，被要求更細直徑 尺寸之鑽具。 因此，近年來，特別是在使用直徑〇.25mm以下之小 徑鑽具（drill)實施的鑽孔，耐磨損性之提升成爲課題。 本發明人等，嘗試將TiN、TiCN、TiAIN等各種氮化 物系披膜披覆於鑽具實施電子電路基板之鑽孔，相對於無 塗膜（noncoating)之鑽具無法確認耐磨損性之提升效果 〇 另外’在以非晶質碳披膜披覆於鑽具實施電子電路基 板之鑽孔’相對於無塗膜之鑽具雖確認耐磨損性有提升效 果，但未必充分’相較於習知非晶質碳披膜有更進一步提 升耐磨損性之餘地。 另外’習知非晶質碳披膜，需要於鑽具外周部之圓周 方向將膜厚設爲一·定，欲於鑽具外周部之圓周方向進行無 誤差之成膜’例如如圖1所示’須使用電弧離子鍍膜方式 之成膜裝置，其係在塗膜室21之左右設置朝該塗膜室21 發射材料的碳蒸發源22及金屬蒸發源'23，於塗膜室21 內具備設有複數個鑽具設定用碟型治具24的公轉平台26 ’於該碟型治具24被穿設鑽柄設定（driu shank set)用 孔25，藉由公轉平台26使碟型治具24公轉（a)之同時 ，使碟型治具24自轉（b)，另外，使碟型治具24上之 •6- 201105442[Technical Field] The present invention relates to a perforated tool used for perforation processing of a non-ferrous-based material to be cut, such as an electronic circuit board, and a coated amorphous carbon film and perforation. tool. [Prior Art] It is known to use a hard wear-resistant film for coating a metal cutting tool, such as TiN, TiCN, TiAIN, or the like. In particular, the Ti A IN film, which is represented by the patent documents 1 and 2, is a TiN-added A1 which is improved in hardness and heat resistance, and is widely used for containing sintered steel based on good wear resistance. The perforated tool for processing the iron and steel material is made of a hard film. In addition, it has been recently applied to non-ferrous materials such as aluminum alloys, titanium (Ti), magnesium (Mg), and copper, and is also used as an amorphous carbon coating for wear-resistant and melt-resistant coatings. It is put into practical use and is used for cutting tools such as drills or end mills and blade-replaceable cutting chips. [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A No. Hei. No. Hei. No. Hei. The printed circuit board is a composite structural material composed of glass fiber, dimension-5-201105442, resin, copper foil, etc., and is subjected to a plurality of piercing processes (drilling) in the circuit manufacturing process. Recently, the electrical characteristics of electronic circuit boards have been improved, and materials that are difficult to drill (hard to cut materials) have increased. In addition, with the increase in circuit density, drills of a finer diameter are required. Therefore, in recent years, particularly in the case of drilling using a small diameter drill having a diameter of 2525 mm or less, the improvement in wear resistance has been a problem. The inventors of the present invention attempted to coat various nitride-based films such as TiN, TiCN, and TiAIN on a drill hole to perform drilling of an electronic circuit board, and it was impossible to confirm wear resistance with respect to a non-coating drill. Enhancement effect 〇In addition, 'drilling of an electronic circuit substrate with an amorphous carbon coating on a drill” is effective in improving wear resistance compared to a non-coated drill, but may not be sufficient The conventional amorphous carbon coating has a room for further improvement of wear resistance. In addition, the conventional amorphous carbon film needs to have a film thickness set in the circumferential direction of the outer peripheral portion of the drilling tool, and it is desired to form an error-free film in the circumferential direction of the outer peripheral portion of the drilling tool, for example, as shown in FIG. A film forming apparatus that uses an arc ion plating method, in which a carbon evaporation source 22 and a metal evaporation source '23 for emitting a material toward the coating chamber 21 are disposed on the left and right sides of the coating chamber 21, is provided in the coating chamber 21 A revolving platform 26' having a plurality of drill setting fixtures 24 is provided with a dimple shank set hole 25 for the disc type fixture, and the disc type fixture is made by the revolving platform 26. At the same time as 24 revolutions (a), the disc type fixture 24 is rotated (b), and in addition, the disc type fixture 24 is used. 6-201105442
鑽具分別自轉（C )而進行成膜。I 氣單元。 但是，此情況下，須於各碟型 孔25附近設置使鑽具自轉之鑽具 孔2 5之間隔需要取較大，鑽具於石 僅能配置一列。因此，一次可設定 變少，結果，非晶質碳披膜披覆而 問題存在。 本發明人等針對非晶質碳披膜 膜之拉曼散射分光分析値或披膜厚 値作爲偏差附加於鑽具外周部之圓 以解決上述問題，如此而完成本發 供，可以提升電子電路基板等之非 耐磨損性，而且，以低價格進行成 工具用非晶質碳披膜及穿孔工具》 (用以解決課題的手段） 說明本發明之要旨如下。The drill is rotated (C) to form a film. I gas unit. However, in this case, it is necessary to arrange a hole in the vicinity of each of the disc holes 25 so that the distance between the drill holes 25 for the rotation of the drill needs to be large, and the drill can only be arranged in one row. Therefore, the setting can be made less at a time, and as a result, the amorphous carbon is overcoated and the problem exists. The present inventors have solved the above problem by attaching a Raman scattering spectroscopic analysis of an amorphous carbon film to a circle attached to the outer peripheral portion of the drill as a deviation, thereby completing the present invention and improving the electronic circuit. The non-abrasion resistance of the substrate and the like, and the amorphous carbon coating and the piercing tool for tooling are performed at a low price. (Means for Solving the Problem) The gist of the present invention will be described below.
穿孔工具用非晶質碳披膜，係 具用非晶質碳披膜，其特徵爲：針 用波長53 2nm之雷射光進行拉曼营 ) 分光分析時，在拉曼位 1330〜1360CHT1附近之峰値強j 1530〜1560CHT1附近之峰値強度IG 丨中，符號27爲真空排 治具24之鑽柄設定用 自轉機構，鑽柄設定用 |型治具24之半徑方向 於成膜裝置的鑽具數目 成的鑽具之價格變高之 成膜時之鑽具姿勢與披 度加以硏究，以彼等之 周方向予以控制，而可 明。亦即，本發明係提 鐵系被削材之穿孔中之 膜的極爲實用性的穿孔 成於基板上的穿孔工 對該非晶質碳披膜，使 :身寸(Raman Scattering 移（Raman Shi ft ) ^ Id，與拉曼位移 之比Id/Ig之値，於工 201105442 具外周部之圓周方向位置呈現互異’該於圓周方向 之最大値設爲（lD/I<3)max、最小値設爲時’成立 以下之關係式（1 )及（2 )， 式（1) : (lD/lG)min<0.4 式（2) : 1〈（ID/Dmax/UD/IG)!^〆〗。 於申請專利範圍第1項之穿孔工具用非晶質碳披膜中 ，該非晶質碳披膜之披膜厚度於工具外周部之圓周方向位 置呈現互異，該披膜厚度於圓周方向之最大値設爲hmax、 最小値設爲hmin時，成立以下之關係式（3 )及（4 )， 式（3) : lOOnm^ hmax^ lOOOnm 式（4 ) ·· 0.3 各 hmin/hmax S 0.9。 於申請專利範圍第2項之穿孔工具用非晶質碳披膜中 ，該非晶質碳披膜於工具外周部之圓周方向中之ID/IG之 値成爲最小的位置與披膜厚度成爲最大的位置，之間的角 度偏差爲±90度以內。 於申請專利範圍第】〜3項中任一項之穿孔工具用非晶 質碳披膜中’該非晶質碳披膜係被形成於下層披膜層之上 ’該下層披膜層爲，由週期表之4a、5a、6a族與Si所選 擇之1種或2種以上之元素形成的金屬或半金屬所構成， 膜厚爲200nm以下，被形成於基材正上方者。 201105442 於申請專利範圍第1 ~ 3項中任一項之穿孔工具用非晶 質碳披膜中’該非晶質碳披膜係形成於下層披膜層之上’ 該下層披膜層爲，由週期表之4a、5a、6a族與Si所選擇 之1種或2種以上之元素’與由氮、碳所選擇之1種以上 之元素，的化合物所構成’膜厚爲200nm以下’被形成 於基材正上方者。 穿孔工具，其特徵爲：被披覆有申請專利範圍第1 項中任一項之穿孔工具用非晶質碳披膜者。 申請專利範圍第1〇項之穿孔工具’直徑爲〇.25mm 以下0.0 1 m m以上〇 於申請專利範圍第1 0、1 1項之穿孔工具中’於工具 前端部未附著上述非晶質碳披膜。 於申請專利範圍第1 3項之穿孔工具中，基材爲以 WC爲主成份的硬質粒子與以Co爲主成份的結合材所構 成的超硬合金製，該超硬合金之WC粒子之平均粒徑爲 Ο.ΐμπι〜2μηι，Co之含有量爲重量％之5~15%» 於申請專利範圍第1 4項之穿孔工具其中，被削材爲 電子電路基板或半導體封裝基板。 【實施方式】 簡單說明較佳之本發明實施形態及本發明之作用。 藉由形成有非晶質碳披膜的穿孔工具，該非晶質碳披 膜爲’ Id/IG之値於工具外周部之圓周方向位置呈現互異 ’（ID/IG)min<0.4，而且 l<(lD/iG)niax/(iD/lG)min<2 之關係成 201105442 立者，對例如電子電路基板等之非鐵系被削材進行穿孔加 工。 此時，和習知工具外周部之圓周方向之膜厚及ID/IG 爲一定的非晶質碳披膜比較，上述關係成立的非晶質碳披 膜可以提升穿孔工具之耐磨損性（參照後述之實施形態） ，因此，即使小徑之穿孔工具亦可對電子電路基板等難削 材料進行良好之穿孔加工。 另外，ID/IG之値於工具外周部之圓周方向位置呈現 互異，因此工具本身無須自轉即可進行成膜，可使用該簡 單構成之成膜裝置進行成膜。 因此，和習知非晶質碳披膜比較，本發明成爲可以提 升工具之耐磨損性，而且，可以低價格進行成膜的非晶質 碳披膜。 以下參照圖2-4說明本發明之具體實施形態。 本實施形態之穿孔工具，係於基材上形成有非晶質碳 披膜，該非晶質碳披膜爲，使用波長532nm之雷射光進 行拉曼散射（Raman Scattering)分光分析時，在拉曼位 移（Raman Shift) 1330〜1360cm·1附近之峰値強度ID，與 拉曼位移1 5 3 0〜1 560cm·1附近之峰値強度IG之比Id/IG之 値，於工具外周部之圓周方向位置呈現互異，該Id/Ig於 圓周方向之最大値設爲（ID/IG)max、最小値設爲（lD/IG)min 時，（ID/lG)min<〇.4，而且 l<(ID/IG)max/(ID/IG)min<2 之關係 成立者。 該穿孔工具1 (鑽具），係如圖2所示，通常之形狀 -10- 201105442 係由形成有切削排出槽12的本體部2與柄部3構成，$ 少於本體部2之切削排出槽1 2及外周部1 3形成非晶質碳 披膜。 本實施形態之穿孔工具1之基材，係採用：以WC爲 主成份的硬質粒子與以C 〇爲主成份的結合材所構成的超 硬合金製，該超硬合金之 WC粒子之平均粒徑爲 0.1μιη~2μηι，Co之含有量爲5〜15重量％。另外，本實施 形態中，工具直徑（本體部2之直徑）爲0.25mm以下 0.01mm以上，使用於電子電路基板或半導體封裝基板之 穿孔加工。 另外，本實施形態之非晶質碳披膜之披膜厚度，係於 工具外周部之圓周方向位置呈現互異，該披膜厚度於圓周 方向之最大値設爲hmax、最小値設爲hmin時，lOOnmg hmax ^ 1 OOOnm > 而且 0.3Shmin/hmax$0.9 之關係成立而構 成。另外，該非晶質碳披膜於工具外周部之圓周方向中 ID/IG之値成爲最小的位置與披膜厚度成爲最大的位置， 之間的角度偏差被設爲±90度以內。 又，本實施形態中，非晶質碳披膜係形成於基材正上 方，但是，例如於基材正上方形成：由週期表之4a、5a 、6a族與Si所選擰之1種或2種以上之元素形成的金屬 或半金屬所構成，膜厚爲200nm以下之下層披膜層（底 層膜），於該下層披膜層之上形成上述非晶質碳披膜而構 成亦可。另外，下層披膜層不限定於上述構成，亦可採用 :由週期表之4a、5a、6a族與Si所選擇之1種或2種以 -11 - 201105442 上之元素，與由氮、碳所選擇之1種以上之元素，的化合 物所構成者。 以下更詳細說明本實施形態。 首先，說明非晶質碳披膜與拉曼散射分光分析。拉曼 散射分光分析法，係習知非晶質碳披膜之評估法，取 附近具有中心頻率的 D 頻帶與 1 53 0〜15 6OcnT1附近具有中心頻率的G頻帶組合而成的光 譜波形。以該光譜波形假設爲具有D峰値與G峰値之2 個高斯分布的峰直波形之重疊時，個別之峰値強度Id與 IG之比ID/IG之値常被使用作爲非晶質碳披膜之評估値（ 參考文獻，例如大竹他：DLC之應用技術，CMC出版， (2007)24)。 本發明人係在各種成膜條件下對鑽具施予非晶質碳披 膜，使用該鑽具對電子電路基板實施鑽孔實驗，發現 Id/Ig之値越小越能提升鑽具之耐磨損性。另外，發現成 膜時和碳離子之射入方向呈正交配置鑽具時，將鑽具固定 而進行成膜時，雖僅鑽具外周部之碳離子射入側被形成非 晶質碳披膜，但此時之ID/IG之値相較於鑽具自轉而成膜 時之ID/IG之値變小。然而，使用固定而進行成膜的鑽具 對電子電路基板施予鑽孔時，雖然在碳離子射入之相反側 的鑽具外周部未被形成披膜，但和自轉成膜之鑽具相較其 耐磨損性變差。 圖1表示實驗所使用之成膜裝置之模式圖。實驗中雖 使用電弧離子鍍膜方式之成膜裝置，但亦可使用濺鍍方式 -12- 201105442 或雷射消融（laser ablation)方式等之PVD成膜 成膜裝置，係由塗膜室21，碳蒸發源22,金屬蒸; ，及真空排氣單元27構成，具備Ar轟擊功能。碳 由碳蒸發源碳蒸發源22朝塗膜室21被發射。鑽具 於鑽具設定用之碟型治具24。 於碟型治具24被穿射鑽柄設定用孔25用於插 之鑽柄（shank )，於該鑽柄設定用孔2 5使鑽柄朝 鑽具。碟型治具24，係被組裝於公轉平台26之上 膜裝置，通常爲使鑽具外周部之圓周方向之膜厚均 於成膜時，係藉由公轉平台26使碟型治具24公零 、而且自轉（b)，另外，使鑽具本身自轉（c)者 於此’本發明人等，係如圖3所示，解除圖1 本身之自轉（c )，亦即，僅設爲碟型治具8之公_ 與自轉（b )之動作，針對自碟型治具8之中心至 定用孔9之半徑位置作各種變化而進行成膜之實驗 況下’鑽具來到圖3之A位置附近時，於鑽具外 碳蒸發源側被披覆非晶質碳披膜。另外，鑽具來到 B位置附近時，於A位置附近已被披覆有非晶質碳 鑽具外周部之相反側面會變爲朝向碳蒸發源側，於 成膜非晶質碳披膜。又，圖3之符號5爲塗膜室， 蒸發源’ 7爲金屬蒸發源，1〇爲公轉平台，11爲 氣單元，彼等係和圖1同樣之構成。 此情況下，雖於鑽具外周部之圓周方向全面被 晶質碳披膜，但於A位置與B位置之附著量不同 裝置。 !源23 離子係 被設定 入鑽具 下插入 。該成 勻化， 1(a) 〇 之鑽具 1(a) 鑽柄設 。此情 周部之 圖3之 披膜的 該面被 6爲碳 真空排 形成非 ，因而 -13- 201105442 於圓周方向存在膜厚分布。 由實驗結果發現，使碟型治具8公轉及自轉、鑽具本 身不自轉的上述方法（本發明）所成膜之鑽具，其Id/Ig 之値於鑽具外周部 '之圓周方向位置呈現互異，其最小値 (ID/lG)min較鑽具本身自轉（習知）方法所獲得之ID/IG之 値爲小，其最大値（ID/lG)maX較鑽具本身自轉方法所獲得 之ID/I(J之値爲大（參照圖4 )。另外，藉由變化碟型治 具4之中心至鑽柄設定用孔9之半徑位置，亦可以變化 (lD/lG)max/(lD/lG)min 之値。使鑽具之（lD/lG)max/(lD/I(3)min 之値作各種變化而進行對電子電路基板之鑽孔實驗結果發 現，藉由將（lD/lG)max/(lD/lG)min之値控制於特定範圍，則 相較於使鑽具本身旋轉而成膜之情況，可以提升耐磨損性 Ο 具體言之爲，（ID/IG)max/(ID/IG)min之値變爲過大時， (ID/IG)maX之値將變大，伴隨此而導致鑽具之耐磨損性降 低’因此’（lD/lG)max/(lD/lG)min之値較好是大於1小於2 。另外，（ID/lG)min之値過大時，鑽具之耐磨損性降低， 因此，（ID/IG)min之値較好是小於0.4。 如圖1所示，使鑽具設定用碟型治具24公轉及自轉 、另使鑽具本身自轉的習知方法，需要使鑽具本身自轉， 鑽柄設定用孔2 5附近必須設爲複雜之機構，鑕柄設定用 孔25之間隔須取較大，而且於鑽具設定用碟型治具24之 半徑方向僅能配置1列。結果，能設定於成膜裝置的鑽具 數目變少，披覆鑽具之價格變高爲其問題。 -14 - 201105442 關於此點，本發明中，鑽具本身無須自轉，因此如圖 3所示，鑽柄設定用之碟型治具8無須設爲複雜之機構’ 鑽柄設定用孔 9之間隔變窄，另外，在（ID/lG)maX/ (lD/IG)min之値滿足上述値之範圍內，可於鑽柄設定用之 碟型治具8之半徑方向配置複數列，和習知例比較，可以 大幅增加能設定於成膜裝置的鑽具數目。 以下說明鑽具外周部之圓周方向之膜厚分布。使鑽具 設定用碟型治具公轉及自轉、另使鑽具本身自轉的習知方 法’鑽具外周部之圓周方向之膜厚成爲均勻。相對於此， 本發明中，以ID/IG之値於鑽具外周部之圓周方向之位置 成爲不均勻爲其特徵，但是，使ID/IG之値變小的部分之 膜厚增厚，使ID/IG之値變大部分之膜厚變薄，依此而可 以強化（ID/IG)min之影響度，弱化（ID/IG)max之影響度，結 果’可提升鑽具之耐磨損性。藉由解除成膜時鑽具本身自 轉，使鑽具外周部之圓周方向之膜厚分布不均勻，藉由變 化鑽具設定用碟型治具中心至鑽柄設定用孔之半徑位置， 使鑽具外周部之圓周方向之膜厚分布亦呈現變化。 圓周方向之最大披膜厚度設爲hmax、最小披膜厚度設 爲hmin時’ hmin/hmax之値過大時，無法強化（〗D/iG)min之 影響度’另外’ hmin/hmax之値過小時，最小披膜厚度hmjn 變爲太小，非晶質碳披膜之效果變小，因此hmu/hn^x之 値較好是設爲0.3以上0.9以下。另外，hmax之値過大時 ，披膜應力變大，與基材間之密接性降低，hmax之値過小 時非晶質碳披膜之效果變小，因此hmax之値較好是設爲 -15- 201105442 100nm以上lOOOnm以下。另外，鑕具外周之於圓周方向 之ID/IG之値成爲最小的位置與披膜厚度成爲最大的位置 ，之間的角度偏差過大時，無法強化（lD/IG)min之影響度 ，因此，較好是將ID/IG之値成爲最小的位置與披膜厚度 成爲最大的位置間的角度偏差設爲±90度以內。 以下說明基材與非晶質碳披膜間之密接性。在進行非 晶質碳披膜之成膜前，藉由Ar蟲擊來潔淨基材表面，可 以確保基材與非晶質碳披膜之密接性。但是，欲於披膜不 剝離之情況下，對電子電路基板等難削材進行穩定之鑽孔 時，較好是更提高基材與非晶質碳披膜間之密接性。可以 將由1'丨、〇1''丁3等週期表之4&、5£1、63族元素與8丨所 選擇之1種或2種以上之元素形成的金屬或半金屬，形成 於基材正上方作爲底層膜，而於其上形成非晶質碳披膜， 如此則可以提升基材與非晶質碳披膜間之密接性。或者， 將週期表之4a、5a、6a族與Si所選擇之1種或2種以上 之元素，與由氮、碳所選擇之1種以上之元素的化合物， 形成於基材正上方作爲底層膜亦可。 底層膜之形成係爲提升基材與非晶質碳披膜間之密接 性，太厚則無意義，因此較好是設爲2 0 0 n m以下之膜厚 〇 本發明人在使用非晶質碳披膜鑽具進行鑽孔實驗過程 中，發現除去鑕具前端部4之披膜時與不除去時兩者之耐 磨損性幾乎無差異。此乃因爲，於非晶質碳披膜具有減低 鑽具與孔內壁之摩擦效果或提升切屑之排出性之效果，彼 -16- 201105442 等效果爲提升鑽具耐磨損性之主要原因。 予再度硏磨、再度利用。亦即，某依程度 藉由硏磨除去前端部附近之磨損部分，形 予以利用。本發明之非晶質碳披膜披覆而 再度硏磨、再度利用，但於鑽具前端部可 碳披膜。 本發明之非晶質碳披膜，係爲非鐵系 具使用而發明者，其基材，就獲得硬度與 言，較好是以WC爲主成份的硬質粒子與 的結合材所構成的超硬合金材料。w C粒 小時，WC粒子難以均勻分散於結合材中 合金之抗折力。另外，WC粒子之平均粒 低超硬合金之硬度。另外，Co含有量太 硬合金之抗折力。反之，Co含有量太多 合金之硬度。因此，構成基材之超硬合金 子之平均粒徑爲ο.ίμηι〜2μηι，Co含有量: %者。 本實施形態係如上述構成，在至少於 部被披覆有非晶質碳披膜的鑽具之中，藉 之圓周方向將ID/Ie之値設爲不均句，如 具之耐磨損性，而且可以降低成本予以製 以下說明佐證本實施形態之效果的實 使用圖1、3之電弧離子鍍膜裝置作 成膜裝置內安裝Ti之金屬蒸發源及石墨 通常，鑽具被施 使用鑽具之後， 成新的刀刃再度 成的鑽具亦施予 以不附著非晶質 被削材用途之鑽 韌性平衡觀點而 以Co爲主成份 子之平均粒徑太 ，容易降低超硬 徑太大時，會降 少時，會降低超 時，會降低超硬 ，較好是WC粒 爲5〜1 5 %之重量 鑽具外周部及溝 由在鑽具外周部 此而可以提升鑽 造。 驗例。 爲成膜裝置，於 之碳蒸發源，另 -17- 201105442 外，以Ar氣體作爲蟲擊用氣體，必要時以N2氣體作爲反 應氣體，導入成膜裝置內，於作爲成膜基材之超硬合金製 鎭具（直徑0.1mm、溝長1.5mm、全長38mm、鑽柄徑 3.17 5mm)形成特定之披膜。將習知例與實施形態之2種 類之鑽具設定用碟型治具安裝於公轉平台，依據使鑽具本 身自轉的方式（工具自轉方式：習知方式），與解除鑽具 之自轉、於鑽具外周部之圓周方向設定ID/IG之値成爲不 均勻的方式（工具姿勢控制方式：本實施形態方式）之2 種方式同時進行成膜》 將鑽具設定於成膜裝置，進行排氣成爲〇.〇2Pa以下 真空度。最初以Ar蟲擊而潔淨鑽具表面之後，進行非晶 質碳披膜之成膜。另外，必要時於Ar蝨擊之後形成Ti或 TiN膜’於其上形成非晶質碳披膜。於形成Ti或TiN膜 之中’係於電弧電流9 0 A，偏壓-5 0 V條件下進行成膜。 於TiN之成膜中，將n2氣體導入成膜裝置內，於氣體壓 1 Pa條件下進行成膜。於非晶質碳披膜之成膜中，設定電 弧電流30A〜60A’偏壓-30V〜-100V，基材溫度1〇〇。(：以下 之條件’使鑽具外周部之平均膜厚成爲3 50〜400nm而進 行鑽具之成膜。 使用披覆有特定披膜的鑽具，於以下切削條件下進行 鑕孔實驗’測定鑽具折損爲止之鑽孔（hit )數（折損壽 命）。亦即，被削材設爲電子電路基板（BT HL8 3 2HS兩 面附加1 2μηι銅箔，板厚〇. 1 mmx4片重疊），直徑0_ 1 mm 之鑽具以aOOOOOmin·1之旋轉速度旋轉，前進速度 -18- 201105442 2.2 m / m i η，無切削液（乾式）而進行試驗。鑽孔 如圖4所示，表中記載著本發明之實施形態（工 制方式）之同時，記載作爲比較例的習知之無塗 本發明範圍外之習知例（工.具自轉方式）之結果 由圖4之實驗結果可知，和無塗膜鑽具比較 碳披覆的鑽具之折損壽命大幅變長，和習知例（ 方式）比較，實施形態（工具姿勢控制方式）， 許變動，然折損壽命增長數％〜數十％。另外，圖 號9、10之底層膜（下層披膜層）之膜厚並非實 目標値，「非晶質碳膜之膜厚」爲「底層膜之膜 質碳膜之膜厚」。 (發明效果） 本發明，係如上述構成，因此成爲可以提升 基板等之非鐵系被削材之穿孔之耐磨損性，而且 價格進行成膜的極爲實用性的穿孔工具用非晶質 穿孔工具。 【圖式簡單說明】 圖1爲習知成膜方法之說明槪略圖。 圖2爲本實施形態之槪略說明側面圖。 圖3爲本實施形態之成膜方法之說明槪略圖 圖4爲實驗結果之表》 試驗結果 具姿勢控 膜鑽具或 〇 ，非晶質 工具自轉 雖存在稍 4中，編 測値而是 厚+非晶 電子電路 ，可以低 碳披膜及 -19- 201105442 【主要元件符號說明】 1 :穿孔工具 2 :本體部 3 :柄部 4 :前端部 5 :塗膜室 6 :碳蒸發源 7 :金屬蒸發源 8 :碟型治具 9 :鑽柄設定用孔 1 〇 :公轉平台 1 1 :真空排氣單元 1 2 :切削排出槽 1 3 :外周部 21 :塗膜室 22 :碳蒸發源 23 :金屬蒸發源 24 :碟型治具 25 :鑽柄設定用孔 2 6 :公轉平台 2 7 :真空排氣單元 -20The perforating tool is made of amorphous carbon, and the system is made of amorphous carbon. It is characterized by: the needle is irradiated with laser light having a wavelength of 53 2 nm for Raman camp.) When the spectroscopic analysis is performed, the Raman position is near 1330 to 1360 CHT1. Peak 値 j j 1530~1560CHT1 near the peak 値 intensity IG 丨, symbol 27 is the vacuum arranging fixture 24 shank setting rotation mechanism, the shank setting with the | type fixture 24 radial direction to the film forming device drill The price of the drills with a higher number of drills becomes higher, and the postures and drapes of the drills are studied in the film formation, and they are controlled in the direction of their circumference. That is, the present invention is a highly practical perforation of a film in a perforation of an iron-based material to be cut into a perforation on a substrate to cover the amorphous carbon, such that: Raman Scattering (Raman Shifting) ^ Id, the ratio of the Raman shift to the Id/Ig, in the work of 201105442, the position in the circumferential direction of the outer circumference is different. The maximum width in the circumferential direction is set to (lD/I<3)max, minimum 値When set to 'establish the following relationship (1) and (2), formula (1): (lD/lG)min<0.4 Equation (2): 1<(ID/Dmax/UD/IG)!^〆 In the amorphous carbon film for a perforating tool according to the first aspect of the patent application, the thickness of the amorphous carbon film is different from the circumferential position of the outer peripheral portion of the tool, and the thickness of the film is in the circumferential direction. When the maximum 値 is hmax and the minimum 値 is hmin, the following relational expressions (3) and (4) are established. Equation (3): lOOnm^hmax^ lOOOnm Equation (4) ·· 0.3 Each hmin/hmax S 0.9. In the amorphous carbon film for a perforating tool of the second application of the patent application, the amorphous carbon is coated with the ID/IG in the circumferential direction of the outer peripheral portion of the tool. The minimum position and the thickness of the mask are the largest, and the angular deviation is within ±90 degrees. In the amorphous carbon coating of the perforating tool according to any one of the claims ～3, 'the amorphous The carbon film is formed on the lower layer of the film. The lower layer is a metal or a half formed of one or more elements selected from Groups 4a, 5a, and 6a of the periodic table and Si. It is composed of a metal, and has a film thickness of 200 nm or less, and is formed directly on the substrate. 201105442 In the amorphous carbon film for a perforating tool according to any one of claims 1 to 3, the amorphous carbon is coated with The film system is formed on the lower layer of the film layer. The lower layer of the film layer is one or more elements selected from Groups 4a, 5a, and 6a of the periodic table and Si, and is selected from nitrogen and carbon. A compound having one or more kinds of elements, which has a film thickness of 200 nm or less, is formed directly above the substrate. The piercing tool is characterized in that the perforating tool is coated with any one of the claims of claim 1 Amorphous carbon coated person. Patent application No. 1 of the perforation tool' The diameter is 〇.25mm or less and 0.011 mm or more. In the perforating tool of the patent application scope No. 10 and 11, the amorphous carbon coating is not attached to the tip end of the tool. In the perforating tool, the substrate is made of a superhard alloy composed of a hard particle containing WC as a main component and a bonding material containing Co as a main component, and the average particle diameter of the WC particle of the superhard alloy is Ο.ΐμπι~2μηι, The content of Co is 5 to 15% by weight. In the perforating tool of claim 14 of the patent application, the material to be cut is an electronic circuit substrate or a semiconductor package substrate. [Embodiment] The preferred embodiments of the present invention and the effects of the present invention will be briefly described. By forming a perforating tool having an amorphous carbon film, the amorphous carbon film is 'Id/IG' and the position in the circumferential direction of the outer periphery of the tool is different from each other' (ID/IG) min < 0.4, and l <(lD/iG)niax/(iD/lG)min<2 is related to 201105442. For the non-ferrous material to be cut, for example, an electronic circuit board is punched. At this time, compared with the film thickness in the circumferential direction of the peripheral portion of the conventional tool and the amorphous carbon film having a constant ID/IG, the amorphous carbon film having the above relationship can improve the wear resistance of the piercing tool ( According to the embodiment described later, even a small-diameter piercing tool can perform a good piercing process on a hard-to-cut material such as an electronic circuit board. Further, since the position of the ID/IG in the circumferential direction of the outer periphery of the tool is different, the tool itself can be formed without spinning, and the film formation apparatus can be formed by using the film forming apparatus. Therefore, compared with the conventional amorphous carbon film, the present invention is an amorphous carbon film which can improve the wear resistance of the tool and can be formed at a low price. Specific embodiments of the present invention will be described below with reference to Figs. In the perforating tool of the present embodiment, an amorphous carbon coating film is formed on a substrate, and the amorphous carbon coating film is subjected to Raman Scattering spectroscopic analysis using laser light having a wavelength of 532 nm, in Raman. Raman Shift The peak intensity ID near 1330~1360cm·1, and the Raman shift 1 5 3 0~1 560cm·1 peak 値 intensity IG ratio Id/IG, around the circumference of the tool The direction positions are different, and the maximum 値/Ig in the circumferential direction is set to (ID/IG)max, the minimum 値 is set to (lD/IG)min, (ID/lG)min<〇.4, and l< ; (ID/IG) max / (ID / IG) min < 2 relationship established. The perforating tool 1 (drilling tool) is as shown in FIG. 2, and the normal shape -10-201105442 is composed of the main body portion 2 and the shank portion 3 formed with the cutting discharge groove 12, and the cutting amount is less than that of the main body portion 2. The groove 1 2 and the outer peripheral portion 13 form an amorphous carbon coating. The substrate of the perforating tool 1 of the present embodiment is made of a superhard alloy composed of a hard particle containing WC as a main component and a bonding material containing C 〇 as a main component, and an average particle of the WC particle of the super hard alloy. The diameter is from 0.1 μm to 2 μm, and the content of Co is from 5 to 15% by weight. Further, in the present embodiment, the tool diameter (diameter of the main body portion 2) is 0.25 mm or less and 0.01 mm or more, and is used for perforation processing on an electronic circuit board or a semiconductor package substrate. Further, the thickness of the amorphous carbon film of the present embodiment is different in the circumferential direction of the outer peripheral portion of the tool, and the maximum thickness of the film thickness in the circumferential direction is hmax and the minimum value is hmin. , lOOnmg hmax ^ 1 OOOnm > and the relationship of 0.3Shmin/hmax$0.9 is established. In addition, the amorphous carbon is applied to the position in which the position of the ID/IG is the smallest and the position where the thickness of the overcoat is the largest in the circumferential direction of the outer peripheral portion of the tool, and the angular deviation between them is set to within ±90 degrees. Further, in the present embodiment, the amorphous carbon coating film is formed directly above the substrate, but is formed, for example, directly above the substrate: one selected from the group 4a, 5a, 6a, and Si of the periodic table or A metal or a semimetal formed of two or more elements may have a film thickness of 200 nm or less and a layer of a film (underlayer film), and the amorphous carbon film may be formed on the lower layer of the film. Further, the lower layer is not limited to the above configuration, and one or two types selected from Groups 4a, 5a, and 6a of the periodic table and two elements of -11 - 201105442 may be used, and nitrogen and carbon may be used. A compound composed of one or more selected elements. This embodiment will be described in more detail below. First, an amorphous carbon coating and Raman scattering spectroscopic analysis will be described. The Raman scattering spectroscopic analysis method is a method for evaluating an amorphous carbon coating, and takes a spectrum waveform of a D band having a center frequency and a G band having a center frequency near 1 530 to 15 6 OcnT1. When the spectral waveform is assumed to be a superposition of the peak straight waveforms of the two Gaussian distributions of the D peak and the G peak, the ratio of the individual peak intensity Id to the IG ID/IG is often used as the amorphous carbon. Evaluation of the tympanic membrane (References, for example, Dazhu He: Application Technology of DLC, CMC Publishing, (2007) 24). The inventors applied an amorphous carbon coating to the drilling tool under various film forming conditions, and conducted drilling experiments on the electronic circuit substrate using the drilling tool, and found that the smaller the Id/Ig is, the better the drilling resistance can be improved. Abrasion. In addition, when the drilling tool is placed orthogonally to the direction in which the carbon ions are incident, when the drilling tool is fixed and formed into a film, only the carbon ion injection side of the outer peripheral portion of the drilling tool is formed into an amorphous carbon. Membrane, but the ID/IG 此时 at this time is smaller than the ID/IG of the drill when it is rotated. However, when drilling a circuit board using a fixed film-forming drill, although the outer peripheral portion of the drill on the opposite side of the carbon ion injection is not formed, the drill is formed into a film. It is worse than its wear resistance. Fig. 1 is a schematic view showing a film forming apparatus used in the experiment. In the experiment, although the film forming apparatus of the arc ion plating method is used, a PVD film forming film forming apparatus such as a sputtering method -12-201105442 or a laser ablation method may be used, which is a coating film chamber 21, carbon. The evaporation source 22, the metal vaporization, and the vacuum exhaust unit 27 are configured to have an Ar bombardment function. Carbon is emitted from the carbon evaporation source carbon evaporation source 22 toward the coating chamber 21. The drill is used in the disc type fixture for drilling tools. The disc type fixture 24 is used to insert a shank setting hole 25 for inserting a shank, and the shank setting hole 25 is used to make the shank face the drill. The disc type fixture 24 is assembled on the membrane device above the revolving platform 26, and is generally used to make the disc-shaped jig 24 by the revolving platform 26 when the film thickness in the circumferential direction of the outer peripheral portion of the drilling tool is formed. Zero, and rotation (b), in addition, the drilling tool itself is rotated (c). Here, the inventor, etc., as shown in FIG. 3, releases the rotation (c) of FIG. 1 itself, that is, only The operation of the disc type jig 8 and the rotation (b), in the experimental case where the film is formed from the center of the disc type fixture 8 to the radius of the fixed hole 9 When the position of A is near 3, the amorphous carbon is coated on the outer side of the carbon evaporation source of the drill. Further, when the drilling tool comes to the vicinity of the B position, the opposite side of the outer peripheral portion of the amorphous carbon drill which has been coated near the A position becomes toward the carbon evaporation source side, and the amorphous carbon film is formed. Further, reference numeral 5 in Fig. 3 denotes a coating chamber, and evaporation source '7 is a metal evaporation source, 1 is a revolution platform, and 11 is a gas unit, and they are the same as those of Fig. 1. In this case, although the circumferential direction of the outer peripheral portion of the drill is completely covered with crystalline carbon, the amount of adhesion between the A position and the B position is different. ! Source 23 Ion system is set to be inserted under the drill. The homogenized, 1(a) 〇 drill 1(a) shank design. In this case, the surface of the film of Fig. 3 is formed by a carbon vacuum row, and thus -13-201105442 has a film thickness distribution in the circumferential direction. From the experimental results, it was found that the drilled tool formed by the above method (invention) in which the disc type fixture 8 is rotated and rotated, and the drill itself does not rotate, and the Id/Ig is located in the circumferential direction of the outer peripheral portion of the drill. Different in appearance, the minimum 値(ID/lG)min is smaller than the ID/IG obtained by the drilling tool itself (preferred) method, and the maximum 値(ID/lG)maX is better than the drilling method itself. The ID/I obtained is larger (refer to Fig. 4). Alternatively, by changing the radius of the center of the disc fixture 4 to the radius of the shank setting hole 9, it is also possible to change (lD/lG)max/ (lD/lG)min. After drilling the drill (1D/lG)max/(lD/I(3)min), the drilling experiment results on the electronic circuit substrate were found by lD/lG)max/(lD/lG)min is controlled to a specific range, and the wear resistance can be improved compared to the case where the drill itself is rotated to form a film. Specifically, (ID/IG When the max/(ID/IG)min becomes too large, the (ID/IG)maX becomes larger, which causes the wear resistance of the drill to decrease. Therefore, (lD/lG)max/ Preferably, (lD/lG)min is greater than 1 and less than 2. In addition, when the (ID/lG) min is too large, the wear resistance of the drill is lowered. Therefore, the (ID/IG) min is preferably less than 0.4. As shown in Fig. 1, the drill is set to be used. For the conventional method of 24 revolutions and rotation of the fixture, and the rotation of the drill itself, the drill itself needs to be rotated. The vicinity of the drill hole setting hole 25 must be set as a complicated mechanism, and the spacing of the handle setting holes 25 must be It is larger, and only one column can be arranged in the radial direction of the disc setting fixture 24. As a result, the number of drills that can be set in the film forming apparatus becomes smaller, and the price of the coated drill becomes higher. -14 - 201105442 In this regard, in the present invention, the drilling tool itself does not need to be rotated, so as shown in FIG. 3, the disc type fixture 8 for setting the shank does not need to be a complicated mechanism 'the shank setting hole 9 The interval is narrowed, and in the range of (ID/lG)maX/(lD/IG)min, the plurality of columns can be arranged in the radial direction of the disc type fixture 8 for the shank setting, and By knowing the comparison, the number of drills that can be set in the film forming apparatus can be greatly increased. The following describes the circumferential direction of the outer peripheral portion of the drill. The thickness distribution of the film is such that the thickness of the outer peripheral portion of the drill is uniform in the conventional method of revolving and rotating the drill-type fixture, and the drilling tool itself is rotated. In contrast, in the present invention, The position of the ID/IG in the circumferential direction of the outer peripheral portion of the drill is characterized by unevenness. However, the thickness of the portion where the ID/IG is reduced is thickened, and the ID/IG is largely changed. The film thickness is thinned, thereby enhancing the influence of (ID/IG) min and weakening the influence of (ID/IG) max, and the result 'can improve the wear resistance of the drill. By releasing the self-rotation of the drill itself during film formation, the film thickness distribution in the circumferential direction of the outer peripheral portion of the drill is uneven, and the radius of the hole of the drill tool setting to the shank setting hole is changed by the drill. The film thickness distribution in the circumferential direction of the outer peripheral portion also changes. When the maximum thickness of the mask in the circumferential direction is hmax and the minimum thickness of the mask is hmin, when the hmin/hmax is too large, the influence of the inability to strengthen (〗 D/iG) min 'other' hmin/hmax is too small. The minimum mask thickness hmjn becomes too small, and the effect of the amorphous carbon film is small, so the hmu/hn^x is preferably set to 0.3 or more and 0.9 or less. In addition, when the hmax is too large, the film stress becomes large, and the adhesion to the substrate is lowered, and the effect of the amorphous carbon film is small when the hmax is too small, so the hmax is preferably set to -15. - 201105442 100nm or more below lOOOnm. In addition, when the position of the outer circumference of the cookware in the circumferential direction is the smallest position and the maximum thickness of the mask, and the angle deviation between the outer circumference is too large, the influence degree of (lD/IG) min cannot be enhanced. It is preferable that the angular deviation between the position where the ID/IG is the smallest and the position where the thickness of the mask is the largest is set to be within ±90 degrees. The adhesion between the substrate and the amorphous carbon film will be described below. Before the film formation of the amorphous carbon film is carried out, the surface of the substrate is cleaned by the Ar insect to ensure the adhesion between the substrate and the amorphous carbon film. However, when it is desired to stably drill a difficult material such as an electronic circuit board when the film is not peeled off, it is preferable to improve the adhesion between the substrate and the amorphous carbon film. A metal or a semimetal formed of one or two or more elements selected from the group of 4's, 51'', and the like of 1'丨, 〇1'', and the like may be formed on the base. The material directly above is used as the underlayer film, and an amorphous carbon film is formed thereon, so that the adhesion between the substrate and the amorphous carbon film can be improved. Alternatively, a compound selected from Groups 4a, 5a, and 6a of the periodic table and one or more elements selected from Si, and a compound of one or more elements selected from nitrogen and carbon are formed directly above the substrate as a bottom layer. The film is also available. The formation of the underlying film is to improve the adhesion between the substrate and the amorphous carbon film. If it is too thick, it is meaningless. Therefore, it is preferably set to a film thickness of 200 nm or less. The inventors used amorphous materials. During the drilling experiment of the carbon-coated drill, it was found that there was almost no difference in the wear resistance between the two without removing the front end portion of the cookware. This is because the amorphous carbon film has the effect of reducing the friction effect between the drill and the inner wall of the hole or improving the discharge of the chip, and the effect of the same is the main reason for improving the wear resistance of the drill. Re-honed and reused. That is, the degree of dependence is utilized by honing to remove the worn portion near the front end portion. The amorphous carbon of the present invention is covered and re-grinded and reused, but the carbon fiber is coated on the front end of the drill. The amorphous carbon film of the present invention is invented for use as a non-ferrous device, and the substrate is obtained by using a hard material and a combination of hard particles and WC as a main component. Hard alloy material. w C grain hours, it is difficult for WC particles to be uniformly dispersed in the bonding material. In addition, the average grain size of the WC particles is low in the hardness of the superhard alloy. In addition, Co contains an amount of flexural resistance of the hard alloy. Conversely, Co contains too much alloy hardness. Therefore, the average particle diameter of the superhard alloy constituting the substrate is ο. ίμηι 〜2μηι, and the Co content is %. According to the present embodiment, in the drilling tool in which at least the portion is covered with the amorphous carbon coating film, the ID/Ie is set as the unevenness in the circumferential direction, and the wear resistance is worn. The following is a description of the effect of the present embodiment. The arc ion plating apparatus of Figs. 1 and 3 is used as a metal evaporation source and graphite for mounting Ti in a film forming apparatus. Usually, after the drilling tool is applied, the drilling tool is used. The new tool is re-established with a drill that is not attached to the amorphous toughness of the material. The average particle size of the Co-based component is too large, and it is easy to reduce the super-hard path. When the drop is reduced, the timeout will be reduced, and the superhardness will be lowered. It is better that the WC grain is 5~15% of the weight of the outer peripheral portion of the drill and the groove is raised by the outer peripheral portion of the drill. Test case. For the film forming apparatus, in addition to the carbon evaporation source, another -17-201105442, Ar gas is used as the insect gas, and if necessary, N2 gas is used as the reaction gas, and is introduced into the film forming apparatus to be used as a film forming substrate. A hard alloy cookware (diameter 0.1 mm, groove length 1.5 mm, full length 38 mm, drill shank diameter 3.17 5 mm) forms a specific film. The disc type jig for setting the drilling tool of the prior art and the second embodiment is mounted on the revolving platform, and the rotation of the drilling tool is performed according to the method of rotating the drilling tool itself (tool rotation method: a conventional method). In the circumferential direction of the drill, the ID/IG is set to be uneven (the tool posture control method: the present embodiment). The two methods are simultaneously formed into a film. The drilling tool is set in the film forming device to perform the exhaust. It becomes 真空.〇2Pa below vacuum. After the surface of the drill is first cleaned with Ar insects, the amorphous carbon film is formed into a film. Further, if necessary, a Ti or TiN film is formed after Ar attack, and an amorphous carbon film is formed thereon. Film formation was carried out in the formation of a Ti or TiN film under the conditions of an arc current of 90 A and a bias of -5 0 V. In the film formation of TiN, n2 gas was introduced into a film forming apparatus, and film formation was performed under a gas pressure of 1 Pa. In the film formation of the amorphous carbon film, the arc current 30A to 60A' bias voltage was set to -30V to -100V, and the substrate temperature was 1 Torr. (The following conditions: The average thickness of the outer peripheral portion of the drill was set to 3 50 to 400 nm to form a film for the drill. The drilling test was performed under the following cutting conditions using a drill coated with a specific film. The number of drills (breaking life) until the drill is broken. That is, the material to be cut is set as the electronic circuit board (BT HL8 3 2HS is attached with 1 2μηι copper foil on both sides, plate thickness 〇. 1 mmx4 overlap), diameter The 0_ 1 mm drill rotates at a rotational speed of aOOOOmin·1, and the forward speed is -18-201105442 2.2 m / mi η, and the test is performed without cutting fluid (dry type). The drilling is shown in Figure 4, and the table shows At the same time as the embodiment of the invention (manufacturing method), the conventional example of the conventional example (with the method of spinning) which is outside the scope of the present invention as a comparative example is described. The results of the experiment of FIG. 4 are known, and the film is not coated. Compared with the conventional example (method), the drilling tool has a longer life of the drill with the carbon-coated drill. Compared with the conventional example (the tool posture control method), the change life is increased by several % to several tens of percent. The bottom film of Figure No. 9, 10 (below The film thickness of the film layer is not a real target, and the film thickness of the amorphous carbon film is the film thickness of the film carbon film of the underlying film. (Effect of the Invention) The present invention is as described above. An amorphous perforating tool for a perforating tool which is excellent in wear resistance of a non-ferrous-based material to be cut, such as a substrate, and which is highly practical for film formation. [Simplified Schematic] FIG. 1 is a conventional film forming method. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 2 is a schematic side view of the embodiment of the present invention. Fig. 3 is a schematic view of a film forming method of the embodiment. Fig. 4 is a table of experimental results. Test results are posture controlled film drilling tools or boring tools. Although there is a slight rotation of the amorphous tool, it is a thick + amorphous electronic circuit, which can be low-carbon and -19-201105442. [Main component symbol description] 1: Perforation tool 2: Body part 3: Handle Part 4: Front end portion 5: Coating chamber 6: Carbon evaporation source 7: Metal evaporation source 8: Disc type jig 9: Drill setting hole 1 〇: Revolving table 1 1 : Vacuum exhaust unit 1 2 : Cutting discharge Slot 1 3 : outer peripheral portion 21 : coating chamber 22 : carbon evaporation source 2 3 : Metal evaporation source 24 : Disc type fixture 25 : Drill setting hole 2 6 : Revolution platform 2 7 : Vacuum exhaust unit -20