201103082 六、發明說明： 【發明所屬之技術領域] 本發明係有關—種半導體材的加工處理方法，特別是指-種珅化鎵的 切割方法。 【先前技術】 砷化鎵是鎵和坤兩種元素所合成的化合物，也是很重要的半導體材 料。4化_較_具有聽和電子效率及高的電子移鱗，使得坤化鎵 勒可以應用於較高頻率之場合，此料化鎵的另一1點在於它是屬於直接能 隙材料？可應用作為發光元件，因此珅化鎵常被用來製作微波積體電路、 紅外線發光二極體、雷射二極體和太陽能電池等元件。 砷化鎵的應用上有的是採石申化鎵搭配一異質結構，舉例來說石申化結或 石申化紹鎵’而砂化鎵射化_晶格f數幾乎一樣，所以可關用分子束 蟲晶法或者有機金屬氣相蟲晶法，輕易地在绅化鎵上形成坤化紹或珅化紹 鎵異質結構，或者是透過—金屬接合層將_化鎵與—晶格常數匹配性較差 鲁之基材貼合’以供應用。而習知將神化鎵裁切為適當形狀時所採用的方式 -般為刀具切割’或絲切割道進行_，再_使用2g〜⑽现高功率 雷射進行_。但在制刀具切割時，極料致晶格損傷，因20〜1〇簡z 冑功率雷射的波形如第丨圖所示，其能量為高度Hl，半波似丨，而熱量 ’、-積因此20〜100KHz局功率雷射之熱量會被位於切割道周圍之碎 化鎵吸收，而導致切割道周圍之碎化鎵產生炫融。在這樣的情況下，切割 道的尺寸叙顧留祕魏融的空間，導致單—畔倾晶麟能切割成 之晶粒量較少。 201103082 種嶄新的砷化 有鑑於此’本發明遂針對上述習知技術之缺失’提出 鎵的切割方法’以有效克服上述之該等問題。 【發明内容】 p明之主要目的在提供—㈣化_切财法，其不僅可以對砰化 紘速的進行加工，且可明免切賴0化鎵生融化或 進而縮減切割道尺寸，提高單—晶圓所可切割之晶粒數目。、 為達上述之目的，本發明提供一種石申化鎵的切割方法，其步驟包含 =4化雜：狀铜辭為心2刪抱之雷㈣辦化鎵材進行 底下藉由频實施解加朗，t更料_本_之 容、特點及其所達成之功效。 軸内 【實施方式】 本發明主要精神係針對習知技術·刀具錢用鮮為％〜⑽咖 之超決速雷射騎化鎵進行切_會導致_社_化鎵材產生融化 與損傷的缺失，提出一種勒新的切割方法，其係利賤率高達20〜2_Hz 之超高速雷射直接料化騎進行_，以觀高解騎的熱能或刀具 對切割道周圍的影響’進行可縮減切割到的尺寸，提高單一晶圓所能切割 之晶粒數目。 …H情本㈣翻鮮為2卩〜2〇GMHz之超快速雷射的技術部分 進仃=明。請-併參閱第2與第3圖其係各為本發明之氮化鎵材的切割 所厂、彳"圖與所使用之頻率為20〜·ΜΗζ雷射的波形示意圖。如圖 厂、·先如步驟S1所述提供一石申化鎵材；接續如步驟S2所述，使用 201103082 如第3圖所述之頻率為20〜200MHz雷射之波形20的能量為高度H2，半 波長為λ2 ’熱量為面積A2之雷射對砷化鎵材進行切割，切割的能力主要 取決於波的能量，也就是高度Η2，頻率20〜200MHz雷射之高度Η2與20 〜ΙΟΟΚΗζ高功率雷射之高度H1是相同的，因此具有相等的砷化鎵材切割 能力。但是使用頻率為20〜200MHz雷射在切割砷化鎵材時傳遞至砷化鎵 材之熱量為A2，相較於習知使用頻率2〇〜1〇〇KHz雷射切割砷化鎵材時傳 '· 遞至砷化鎵材之熱量A1，頻率20〜200MHz雷射之熱量為僅為A1之千分 % 之一，因此能夠有效的避免切割道周圍之砷化鎵材產生融化。 藉此’在切割道無須預留晶格損傷空間的情況下，可將切割道的尺寸 縮小，以大幅度提高單一晶圓所能切割之晶粒數量。 再者’上述之碎化鎵材上方可蟲晶有一異質結構，例如畔化結或石申化 銘鎵，或者下方透過-金屬接合層料化鎵材與—晶格常數隨性較差之 基材貼合’此基材之材質可以為石夕。 唯以上者’僅為本發狀健實_的，並賴來蚊本發明 實施之。餅凡依本發明_職騎叙舰及精摘权均等變化 或修飾’均應包括於本發明之申請專利範圍内。 【圖式簡單說明】 第1圖習知用以切㈣化鎵材之2〇〜觸版高功率雷射的波形示意圖。 第2圖係本發明之砷化鎵材的切割方法流程圖。 第3圖係本㈣之雜賴_财賴朗之頻料2q〜獅顧^的雷 射波形示意圖。 【主要元件符號說明】 201103082 ίο波形 HI高度 € λΐ半波長 Α1面積 20波形 H2高度 λ2半波長 Α2面積201103082 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for processing a semiconductor material, and more particularly to a method for cutting gallium antimonide. [Prior Art] Gallium arsenide is a compound synthesized by two elements, gallium and ke, and is also an important semiconductor material. 4 _ _ has _ and _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ It can be applied as a light-emitting element, and thus gallium antimonide is often used to fabricate components such as a microwave integrated circuit, an infrared light-emitting diode, a laser diode, and a solar cell. The application of gallium arsenide is the combination of quarrying and gallium with a heterostructure. For example, Shi Shenhua or Shi Shenhua Shao gallium and the gallium gallium crystallization_matrix f number is almost the same, so the molecular beam can be used. Insect crystal method or organometallic gas phase crystal method, it is easy to form a heterogeneous structure of Kunhuashao or Suihuagan on gallium antimonide, or a poorly matched lattice constant of gallium and gallium through a metal-bonding layer. Lu's substrate is fitted 'for supply. The conventional method of cutting the deified gallium into a proper shape is generally performed for the cutter cutting or the wire cutting path, and then using the 2g~(10) high-power laser. However, when the cutting tool is cut, the material causes damage to the lattice. Because the waveform of the 20~1〇 z 胄 power laser is as shown in the figure, the energy is the height Hl, the half wave is like the 丨, and the heat ',- Therefore, the heat of the 20~100KHz local power laser will be absorbed by the gallium arsenide around the scribe line, which will cause the gallium gallium around the scribe line to melt. Under such circumstances, the size of the scribe line is reserved for the space of Wei Rong, which results in a small amount of grain cut by the single-edge crystallizer. 201103082 A novel arsenic in view of the present invention, the method of cutting a gallium is proposed in view of the above-mentioned lack of the prior art to effectively overcome the above problems. [Summary of the Invention] The main purpose of p Ming is to provide - (4) _ cut-off method, which can not only process the idling speed, but also can avoid the melting of the galvanized or reduce the size of the scribe line, improve the single - The number of dies that the wafer can cut. In order to achieve the above purpose, the present invention provides a method for cutting gallium arsenide, the steps of which include = 4 hybridization: the shape of the copper is the heart 2 and the reddening of the thunder (4) the operation of the gallium material is carried out by frequency implementation. Lang, t is more material _ the content, characteristics and the effects achieved. In the shaft [Embodiment] The main spirit of the present invention is that the conventional technology and the tool money are used as the %~(10) coffee super-speed laser to cut the gallium, which will cause the melting and damage of the gallium material. Missing, a new cutting method is proposed, which is carried out by ultra-high-speed laser direct riding with a profit rate of 20~2_Hz, and can be reduced by the high thermal energy of the ride or the influence of the cutter on the cutting path. The size cut to increase the number of grains that can be cut by a single wafer. ...H love (four) reticle to 2 卩 ~ 2 〇 GMHz ultra-fast laser technology part. Please refer to the 2nd and 3rd drawings, which are schematic diagrams of the waveforms of the 20° to ΜΗζ lasers used in the cutting of the gallium nitride material of the present invention. As shown in the figure, first, as shown in step S1, a stone of a gallium material is provided; and as described in step S2, the energy of the waveform 20 of the laser having a frequency of 20 to 200 MHz as described in FIG. 3 is used as the height H2. The half-wavelength is λ2 'The heat is the area A2 laser to cut the gallium arsenide material. The cutting ability depends mainly on the energy of the wave, that is, the height Η2, the frequency of the laser is 20~200MHz, the height is Η2 and 20~ΙΟΟΚΗζ high power The height H1 of the laser is the same and therefore has the same gallium arsenide cutting ability. However, when the frequency is 20~200MHz, the heat transferred to the gallium arsenide material when cutting the gallium arsenide material is A2, which is compared with the conventional use frequency of 2〇~1〇〇KHz laser cutting of GaAs material. '· The heat to the gallium arsenide material A1, the heat of the frequency of 20~200MHz laser is only one thousandth of A1, so it can effectively avoid the melting of arsenic gallium material around the cutting channel. In this way, the size of the scribe line can be reduced in the case where the dicing street does not need to reserve a lattice damage space, thereby greatly increasing the number of dies that can be cut by a single wafer. Furthermore, 'the above-mentioned shredded gallium material has a heterogeneous structure on the insect crystal, such as a smear or a stellite gallium, or a lower-through-metal-bonded layer of gallium material and a substrate with a poor lattice constant. 'The material of this substrate can be Shi Xi. Only the above is only a healthy one, and Lai Mosquito is implemented by the present invention. The breadth of the present invention is equivalent to the change or modification of the safari and the fine picking rights, which are all included in the scope of the patent application of the present invention. [Simple description of the drawing] Fig. 1 is a schematic diagram showing the waveform of a high-power laser for cutting (four) gallium materials. Fig. 2 is a flow chart showing a method of cutting a gallium arsenide material of the present invention. The third picture is a schematic diagram of the laser waveform of the (4) miscellaneous _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ [Main component symbol description] 201103082 ίο Waveform HI height € λΐ half wavelength Α1 area 20 waveform H2 height λ2 half wavelength Α2 area
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