201100836 六、發明說明： 【發明所屬之技術領域】 . 本發明是有關於一種直通校正基板及其量測方法，特 別是指一種高頻特性量測之直通校正基板及其量測方法。 【先前技術】 針對高頻連接器電氣特性量測常使用的儀器包括時域 反射儀（Time domain reflectrometer，TDR)與向量網路分析儀 (Vector network analyzer, VNA)兩類。其中，向量網路分析 〇 儀是在頻域（Frequency domain)對待測物（Device Under Test, DUT)做量測，將該待測物視為一整個網絡系統，量測待測 物整體對功率直通係數（Transmitted Coefficient)及反射係數 (Reflected Coefficient)之響應大小，以評估待測物之高頻電 氣特性。 由於使用向量網路分析儀之前，須對儀器與測試治具 做校正，因此，雖然量測步驟較繁瑣，但是結果較準確。 利用網路分析儀量測的主要關鍵技術在於校正，對於標準 〇 測試件可利用SLOT方式進行校正，去除儀器與測試治具的 效應，始能對待測物做準確的量測。 所謂的SLOT方式係指短路電路（short-circuit)、負載 電路（load-circuit)、斷路電路（open-circuit)，以及直通電路 (thru-circuit)這幾種標準阻抗，這些標準阻抗典型上係配置 於一基板之單一侧面的表面上，稱為標準阻抗基板 (impedance standard substrate) ° 但是由於系統電路微型化、SiP技術系統級構裝及三維 3 201100836 晶片穿孔（Through Silicon Via，TSV)日圓抢 展方座未-f V)-圓堆疊關鍵技術發 、未又，待測物訊號傳遞線路輸出入埠（I/O Port)不再 2統晶圓製程型式相同分佈於同平面上，而是分佈於系 =不同平面上;例如，對於諸如BGA封裝構造的基板 2的相元件的實㈣财，由於該㈣元件具有雙侧 、接點’因此，該向量網路分析儀之兩探針中之—者必 須料標準基板之該單-側面進行校正後，再轉動⑽度 ’始传以進行該待測元件之量測。 一顯然地，先前技術並無法避免此—轉動的過程，而這 -轉動過程不僅需要複雜的機構’另外轉動之後便會使原 先=校正值失真，進而影響到量測的精確度，而且轉換後 二:。：：:：頻率約低☆ 10GHZ ’量測頻寬無法有效提升 也疋此一先前技術最大之限制。 而對此先前技術的限制，本案發明人曾提出我國公告 號專利案來加以克服，請參閱圖2，該案所揭露 的其中-種標準阻抗基板14，包含有一銅質芯心Μ，及兩 分別覆蓋該銅質芯心15兩側面的絕緣層16，該二絕❹ 16分別具有兩貫穿孔161，界定兩接點162，用以電連接至 该銅質芯心15，藉此形成一直通電路。 因此’使用該標準阻抗基板14便無需於校正時再另行 轉動，可獲得相對上較正確的校正數值，但是這種設計合 因為南頻訊號容易受到電磁波干擾，而使校正數值仍會 失真情況產生；除此之外，該二、絕緣層16並未完全包㈣ 銅質芯心、15 ’使得該_心15㈣在外㈣分也容易被 201100836 外界電氣訊號所影響，降低整體的校正精度。 【發明内容】 • ’本發明之㈣’即在提供-種高頻特性量測之 直通校正基板及其量測方法，該直通校正基板具有雙側之 接點，使得進行該量測方法時，不用轉動就能獲得雙側的 校正數據，而且具有高頻電磁波抑制與外界電氣訊號隔絕 的功能。 於是，本發明高頻特性量測之直通校正基板，包含一 〇 金屬層、一設置於該金屬層頂面的上絕緣介質層、一設置 於該金屬層底面的下絕緣介質層，及一高頻電磁波抑制單 元。 其中，該上絕緣介質層開設有一上接觸區，以供該金 屬層頂面有部分區域經由該上接觸區而顯露於外；該下絕 緣介質層亦開設有一下接觸區，以供該金屬層底面有部分 區域經由該下接觸區而顯露於外，而且該上、下絕緣介質 層是互相配合而將該金屬層的周緣予以包覆夾設，該上、 〇 了接觸區是經由該金屬層形成電連接而構成—雙側直通電 路；該高頻電磁波抑制單元則具有兩層分別佈設於該上、 下絕緣介質層上的抑制層，且每一抑制層亦開設有一缺口 ，以相對應地連通該上、下接觸區。 本發明高頻特性量測方法則包含一準備步驟、一校正 步驟，及一量測步驟，其中，該準備步驟是先提供前述的 直通权正基板；再進行該校正步驟，將一向量網路分析儀 的兩探針，分別以上下兩侧的方式下埠至該直通校正基板 5 201100836201100836 VI. Description of the Invention: [Technical Field] The present invention relates to a through-correction substrate and a measurement method thereof, and more particularly to a through-correction substrate for measuring high-frequency characteristics and a measurement method thereof. [Prior Art] Instruments commonly used for measuring the electrical characteristics of high-frequency connectors include Time Domain Reflectrometer (TDR) and Vector Network Analyzer (VNA). Among them, the vector network analysis device is measured in the frequency domain (Device Under Test, DUT), and the object to be tested is regarded as an entire network system, and the overall power of the object to be tested is measured. The response of the Transmitted Coefficient and the Reflected Coefficient to evaluate the high frequency electrical characteristics of the object under test. Since the instrument and the test fixture must be calibrated before using the vector network analyzer, although the measurement procedure is cumbersome, the result is more accurate. The main key technology for measuring with the network analyzer is the calibration. For the standard 〇 test piece, the SLOT method can be used to correct the effect of the instrument and the test fixture, and the measurement can be accurately measured. The so-called SLOT method refers to short-circuit, load-circuit, open-circuit, and thru-circuit standard impedance. These standard impedances are typically It is placed on the surface of a single side of a substrate, called the impedance standard substrate. However, due to the miniaturization of the system circuit, the system-level configuration of the SiP technology, and the three-dimensional 3 201100836 wafer silicon via (TSV) The square seat is not -f V) - the key technology of the circular stack is not, and the I/O Port of the signal transmission line is no longer distributed on the same plane, but Distributed in different planes; for example, for a phase component of a substrate 2 such as a BGA package construction, since the (four) component has two sides, a junction, therefore, the two probes of the vector network analyzer It is necessary to correct the single-side of the standard substrate and then rotate (10) degrees to start the measurement of the device under test. Obviously, the prior art cannot avoid this process of rotation, and this-rotation process not only requires a complicated mechanism, but after the other rotation, the original = correction value is distorted, thereby affecting the accuracy of the measurement, and after the conversion two:. ::::The frequency is about ☆ 10GHZ ’ The measurement bandwidth cannot be effectively improved. It is also the biggest limitation of this prior art. In view of the limitations of the prior art, the inventor of the present invention has proposed the patent of the China Bulletin No., please refer to FIG. 2, which discloses a standard impedance substrate 14 including a copper core, and two The insulating layers 16 respectively covering the two sides of the copper core 15 respectively have two through holes 161 defining two contacts 162 for electrically connecting to the copper core 15 Circuit. Therefore, the use of the standard impedance substrate 14 eliminates the need for additional rotation during calibration, and a relatively correct correction value can be obtained. However, this design is because the south frequency signal is susceptible to electromagnetic interference, and the correction value is still distorted. In addition, the second, the insulating layer 16 is not completely wrapped (4) copper core, 15 'so that the _ heart 15 (four) in the outer (four) points are also easily affected by the external electrical signals of 201100836, reducing the overall correction accuracy. SUMMARY OF THE INVENTION • '(4) of the present invention is a straight-through calibration substrate and a measurement method thereof for providing high-frequency characteristic measurement, the through-correction substrate having contacts on both sides, so that when the measurement method is performed, The two-sided calibration data can be obtained without rotating, and the high-frequency electromagnetic wave suppresses the isolation from the external electrical signal. Therefore, the through-correction substrate of the high-frequency characteristic measurement of the present invention comprises a germanium metal layer, an upper insulating dielectric layer disposed on the top surface of the metal layer, a lower insulating dielectric layer disposed on the bottom surface of the metal layer, and a high Frequency electromagnetic wave suppression unit. Wherein, the upper insulating dielectric layer defines an upper contact region for a portion of the top surface of the metal layer to be exposed through the upper contact region; and the lower insulating dielectric layer is also provided with a lower contact region for the metal layer a portion of the bottom surface is exposed through the lower contact region, and the upper and lower insulating dielectric layers are interfitted to cover the periphery of the metal layer, and the upper and lower contact regions are via the metal layer. Forming an electrical connection to form a double-sided straight-through circuit; the high-frequency electromagnetic wave suppression unit has two layers of suppression layers respectively disposed on the upper and lower insulating dielectric layers, and each suppression layer is also provided with a notch to correspondingly Connect the upper and lower contact areas. The high-frequency characteristic measurement method of the present invention comprises a preparation step, a calibration step, and a measurement step, wherein the preparation step is to provide the foregoing straight-through right substrate; and then performing the correction step to set a vector network The two probes of the analyzer are respectively smashed to the through-correction substrate 5 in the manner of the upper and lower sides respectively.
…“一，W侧接點之待測 的上、下接觸區，以獲得雜彳目丨丨66松x也u 網路分析儀的校正作業； 正作業的向量網路分析儀 ，' —— I ⑺ 元件電連接，以進行該待測元件的量測作業。... "One, the upper and lower contact areas of the W side contacts to be tested, in order to obtain the miscellaneous items, 66 loose x also u network analyzer calibration operation; the vector network analyzer for the operation, ' —— I (7) The components are electrically connected to perform the measurement of the component to be tested.
二藉由該高頻電磁波抑制單元之兩抑制層的設計，也能使 得校正時可有效隔絕高頻電磁波的干擾利用該上、下絕 緣介質層將該金屬層的周緣予以包覆夾設 訊號直接影響到該金屬層，以提高校正準確度。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之_個較佳實施例的詳細說明中，將可 清楚的呈現。 參閱圖3 ,為一般的向量網路分析儀20的使用方式， 該向量網路分析儀20具有一高頻信號產生器21(RF s〇urce) 提供鬲頻的訊號，並經由一切換開關22(change 〇ver swkch) ，交替地連接至兩個分離的量測埠23、24上。該兩量測埠 23、24分別具有一探針25、％與一待測元件（dut)27相連 接，藉以將該高頻訊號送至該待測元件27。 該向量網路分析儀20之訊號測試模組（Test Set)28、29 再將送至該待測元件27之該高頻信號與由該待測元件27 反射回來的訊號分離’再處理這些訊號，而完成該待測元 201100836 件27之量測作業。 板3 zm4、5 ’本發明高頻特性量測之直通校正基 校正程卜就是應用在執行上述㈣作業之前的 序，以祕上下兩側的校正數據，並藉以直接量測 八有上下兩側接點之待測元件27，以除去該待測 之 外的誤差。 該直通校正基板3的整體結構主要是包含一金屬層31By the design of the two suppression layers of the high-frequency electromagnetic wave suppression unit, the interference of the high-frequency electromagnetic wave can be effectively isolated during the correction, and the upper and lower insulating dielectric layers are used to cover the periphery of the metal layer to directly sandwich the signal. Affect the metal layer to improve the accuracy of the correction. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to FIG. 3, a general vector network analyzer 20 is used. The vector network analyzer 20 has a high frequency signal generator 21 (RF s〇urce) to provide a frequency signal and is connected via a switch 22 (change 〇ver swkch), alternately connected to two separate measurement 埠23,24. The two measuring electrodes 23, 24 respectively have a probe 25, % connected to a dummy component 27, thereby sending the high frequency signal to the device under test 27. The signal test module 28, 29 of the vector network analyzer 20 separates the high frequency signal sent to the device under test 27 from the signal reflected by the device under test 27, and processes the signals again. And the measurement operation of the unit to be tested 201100836 is completed. Plate 3 zm4, 5 'The straight-through correction base correction process of the high-frequency characteristic measurement of the present invention is applied to the sequence before the execution of the above (4) operation, and the correction data of the upper and lower sides of the secret is directly measured by the upper and lower sides. The component to be tested 27 is contacted to remove the error outside the test. The overall structure of the through correction substrate 3 mainly includes a metal layer 31.
、一设置於該金屬層31頂面的上絕緣介質層32、—設置於 該金屬層31底面的下絕緣介質層33，及—高頻電磁波抑制 單元36。 该上絕緣介質層32開設有一上接觸區34，以供該金屬 層31頂面有部分區域經由該上接觸區34而顯露於外；該 下絕緣介質層33亦開設有-下接觸1 35，以供該金屬層 31底面有部分區域經由該下接觸區35而顯露於外，而且該 上、下絕緣介質層32、33是互相配合而將該金屬層31的 周緣予以包覆夾設，該上、下接觸區34、35是經由該金屬 層31形成電連接而構成一雙側直通電路a。 而本實施例所揭露的雙側直通電路A是具有三個接點 Al、A2、A3，分別用以電接觸兩接地端及一訊號端，當然 也可以採用如圖1所示之一接地端及一訊號端的型式，所 以不應侷限於本實施例所揭露之内容。 另外’該上、下絕緣介質層32、33所採用的介電係數 是介於2至11之間，一般來說可以採用BT樹脂（ Bismalemide Triazine Resin)、Duroid 材料，或是陶瓷材料 7 201100836 ’其中’ BT樹脂是由日本三菱瓦斯公司開發出來的， Durcnd材料則是R〇gers公司所開發的各種範圍介電係數⑴ 材料產ασ產πσ類型從低介電係數RT/duroid 5870 (r =2.33) ^ 5880 (r 2.2)，到鬲介電係數 RT/duroid 6006 (r =6.15) 和6010 (r =10.2)，至於該金屬層31 一般則是採用銅質材料 所製成，或是以金質材料製成並且在接點A1、A2、A3部 分鋪上鎳以避免金質材料氧化。 該咼頻電磁波抑制單元36則具有兩層分別佈設於該上 、下絕緣介質層32、33上的抑制層361、361，，且每一抑 制層361、361’亦開設有一缺口 362、362，，以相對應地連 通該上、下接觸區34、35。 而為了要達到抑制高頻電磁波幅射（EMI)的目的，本 實施例之抑制層361、361，，可以在其表面佈設有如圖6所 示的電磁此隙結構（Electromagnetic Band Gap，以下簡稱 EBG)，而EBG並不偈限於圖6所示之—種，也可以採用如 圖7、8所不之態樣，屬於比較接近迴圈型的周期結構。 除此之外，也有利用如圖9、1〇所示的圖型接地屏蔽 結構（Pattern Ground Shield,以下簡稱PGS )，當然也有其 他種類的電磁波抑制電路，只是與PGS、EBG在抑制程度 上的不同而已，在此便不再加以贅述。 至於其所屬技術領域中具有通常知識者可知，該上、 下接觸區34、35與相配合連通的缺口 362、362，，可作為 砒號接點或接地接點，用以連接至圖3所示或如圖5假想 線所示之探針25、26的訊號端或接地端。 201100836 因此，當校正程序需將位於不同量測平面方向之輸出 入淳，號互連時’就可以利用本實施例之直通校正基板3 進仃㈣系統之二維直接校正，詳細地說，係、採用圖Η所 不之本發明高頻特性量測方法4的較佳實施例，如下所述 驟Ώ 丁的7鄉以、一校正步 前述圖4 5!測步驟43，其中，該準備步驟41是先提供 〇 〇 ，=所的直通校正基板3 ;再進行該校正步驟-、圖所不之向量網路分析儀2〇的兩探針Μ、％， it:::式下琿至該直通校正基板3的上、下:觸 該向量網叫得㈣的校正輯，而完成 ，將：:路刀：儀2。的校正作業;接著進行該量測步驟Ο 有上二:接==量Γ分析儀20,與圖2所示之具 的量測作業待測427電連接，以進行該待測元件 會產!=Γ應用本實施例所述之直通校正基板 座生有以下所述之優點： 〇)提升校正準確性與量測頻寬： :向量網路分析儀2。利用本實施例所述之直通校 二::Γ雙側的校正數據之後，便能夠直接量測 構用以L 之待測元件27,並不需要複雜的機 構用以轉動探针，不會影響探針25 的機 析儀20之間之連接訊號線與連接接頭接觸緊^路分 可Μ M AL 按碩接觸紧费性，且 了獲得相對上較正確的校正數據；另外，也無需經由 9 201100836 量測軸線轉換，可有效提升校正及量測頻寬。 (2)隔絕高頻電磁波與外界電氣訊號的干擾： 藉由該高頻電磁波抑制單元36之兩抑制層361、 361’的設計，使得校正時可有效隔絕高頻電磁波的干擾 ’另外’同時也利用該上、下絕緣介質層32、33將該 金屬層3 1的周緣予以包覆夾設，隔絕外界電氣訊號直 接影響到該金屬層3 1，藉此提高訊號傳遞的品質，獲 得良好的雙側校正數據，提高校正準確度。 綜上所述，本發明高頻特性量測之直通校正基板3，藉 由該上、下絕緣介質層32、33是直接覆設於該金屬層31 的頂底兩表面’並開設有上、下接觸區34、35以供雙側下 埠，如此，當進行該量測方法4時，該向量網路分析儀2〇 便不需要在校正之後還要以複雜的機構來轉動探針進行實 際量測’所以可有提升校正準確性與量測頻寬；另外也能 利用該高頻電磁波抑制單元36的設計來隔絕高頻電磁波的 干擾，利用該上、下絕緣介質層32、33將該金屬層31的 周緣予以包覆夾設而避免外界電氣訊號直接影響，所以確 實能達到本發明之目的。 惟以上所述者’僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一標準阻抗電路之示意圖，說明向量網路分析 10 201100836 儀的兩探針’接觸標準阻抗基板之直通電路； 圖2 3 . 牵所福/ 剖視圖，說明我國公告第1237⑶號專利 案所揭露的其中一種標準阻抗基板； i 元件：3式是-系統方塊圖，說明向量網路分析儀量测待測 2 4是—立體圖，說明本發明高頻特性量測之直通校 正基扳之較佳實施例； Ο 圖5是一側視剖視圖，輔助圖4所示之較佳實施例； ® 6〜8皆是―頂視圖’說明該較佳實施例之抑制層表 面所佈設的EBG結構形態； 圖9 10白疋-頂視圖，說明該較佳實施例之抑制層 表面所佈設的PGS結構形態；及 圖11是-步驟流程圖’說明利用前述直通校正基板， 所進行的高頻特性量測方法之較佳實施例。An upper insulating dielectric layer 32 disposed on the top surface of the metal layer 31, a lower insulating dielectric layer 33 disposed on the bottom surface of the metal layer 31, and a high frequency electromagnetic wave suppressing unit 36. The upper insulating dielectric layer 32 defines an upper contact region 34 for a portion of the top surface of the metal layer 31 to be exposed via the upper contact region 34; the lower insulating dielectric layer 33 also has a lower-contact 1 35. A portion of the bottom surface of the metal layer 31 is exposed through the lower contact region 35, and the upper and lower insulating dielectric layers 32, 33 are interfitted to cover the periphery of the metal layer 31. The upper and lower contact regions 34, 35 are electrically connected via the metal layer 31 to form a double-sided through circuit a. The double-sided straight-through circuit A disclosed in the embodiment has three contacts A1, A2, and A3 for electrically contacting the two grounding ends and one signal terminal, and of course, one of the grounding ends shown in FIG. And the type of the signal end, so it should not be limited to the content disclosed in the embodiment. In addition, the dielectric constants of the upper and lower insulating dielectric layers 32 and 33 are between 2 and 11. Generally, BT resin (Bismalemide Triazine Resin), Duroid material, or ceramic material 7 201100836 can be used. Among them, 'BT resin was developed by Mitsubishi Gas Company of Japan, Durcnd material is the range of dielectric coefficient developed by R〇gers. (1) Material produced ασ produced πσ type from low dielectric constant RT/duroid 5870 (r =2.33 ^ 5880 (r 2.2), to the dielectric constant RT/duroid 6006 (r = 6.15) and 6010 (r = 10.2), as for the metal layer 31 is generally made of copper material, or gold The material is made of material and nickel is applied to the joints A1, A2, A3 to avoid oxidation of the gold material. The chirped-frequency electromagnetic wave suppression unit 36 has two layers of suppression layers 361 and 361 respectively disposed on the upper and lower insulating dielectric layers 32 and 33, and each of the suppression layers 361 and 361' also has a notch 362 and 362. Correspondingly, the upper and lower contact regions 34, 35 are connected. In order to achieve the purpose of suppressing high-frequency electromagnetic wave radiation (EMI), the suppression layers 361 and 361 of the present embodiment may be provided with an electromagnetic gap structure (Electromagnetic Band Gap, hereinafter referred to as EBG) as shown in FIG. ), and EBG is not limited to the one shown in Fig. 6, and may also adopt a periodic structure which is closer to the loop type as shown in Figs. In addition, there is also a pattern ground shield Shield (hereinafter referred to as PGS) as shown in Figs. 9 and 1 ,. Of course, there are other types of electromagnetic wave suppression circuits, but only with PGS and EBG. The difference is nothing more, and will not be repeated here. As can be seen from the ordinary knowledge in the technical field, the upper and lower contact areas 34, 35 and the matching gaps 362, 362 can be used as nickname contacts or ground contacts for connecting to FIG. The signal terminals or ground terminals of the probes 25, 26 shown in Fig. 5 are shown as imaginary lines. 201100836 Therefore, when the calibration procedure needs to connect the output in the direction of the different measurement planes into the 淳, the number is interconnected, the two-dimensional direct correction of the system of the through-correction substrate 3 of the present embodiment can be utilized, in detail, According to a preferred embodiment of the high-frequency characteristic measuring method 4 of the present invention, the following steps are as follows: Step 7 of the calibration step 43, wherein the preparation step is performed. 41 is to provide 直, = the straight-through calibration substrate 3; and then perform the correction step - the two-way Μ, %, it::: of the vector network analyzer 2 图Straight-through correction substrate 3 up and down: touch the vector network called (four) correction series, and complete, will:: road knife: instrument 2. The calibration operation is followed by the measurement step, and the second measurement unit 20 is connected to the measurement operation 427 to be tested as shown in FIG. 2 to perform the measurement of the device to be tested! The application of the through-correction substrate holder described in this embodiment has the following advantages: 〇) Lifting correction accuracy and measurement bandwidth: : Vector network analyzer 2. By using the correction data of the two sides of the straight through the second:: Γ described in the embodiment, the component to be tested 27 configured for L can be directly measured, and a complicated mechanism is not needed for rotating the probe without affecting The connection signal line between the analyzers 20 of the probe 25 and the connection connector are in close contact with each other. The M AL is tightly charged and obtains relatively correct correction data. In addition, there is no need to pass the 9 201100836 Measuring axis conversion can effectively improve calibration and measurement bandwidth. (2) Insulation of high-frequency electromagnetic waves from external electrical signals: By the design of the two suppression layers 361, 361' of the high-frequency electromagnetic wave suppression unit 36, the interference of the high-frequency electromagnetic waves can be effectively isolated during the correction. The upper and lower insulating dielectric layers 32 and 33 are used to cover the periphery of the metal layer 31, and the external electrical signal is directly affected to the metal layer 31, thereby improving the quality of the signal transmission and obtaining a good double. Side correction data to improve calibration accuracy. In summary, the through-correction substrate 3 of the high-frequency characteristic measurement of the present invention is formed by directly coating the upper and lower insulating dielectric layers 32 and 33 on the top and bottom surfaces of the metal layer 31. The lower contact areas 34, 35 are for squatting on both sides, so that when the measurement method 4 is performed, the vector network analyzer 2 does not need to rotate the probes to perform the actual operation after the correction. The measurement can be performed to improve the correction accuracy and the measurement bandwidth; in addition, the design of the high-frequency electromagnetic wave suppression unit 36 can be used to isolate the interference of the high-frequency electromagnetic wave, and the upper and lower insulating dielectric layers 32, 33 can be used. The periphery of the metal layer 31 is sandwiched to avoid direct influence of external electrical signals, so that the object of the present invention can be achieved. However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are all It is still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a standard impedance circuit illustrating a two-probe 'contact straight-through circuit of a standard impedance substrate of a vector network analysis 10 201100836; FIG. 2 3 . One of the standard impedance substrates disclosed in Patent No. 1237(3); i component: 3 is a system block diagram, indicating that the vector network analyzer is to be measured, and the high-frequency characteristic measurement is performed. A preferred embodiment of the straight-through calibration base; Ο Figure 5 is a side cross-sectional view of the preferred embodiment shown in Figure 4; <6>8 to 8 are all "top views" illustrating the surface of the suppression layer of the preferred embodiment Figure 9 is a white-top view illustrating the PGS structure of the surface of the suppression layer of the preferred embodiment; and Figure 11 is a flow chart showing the step of using the aforementioned through-correction substrate. A preferred embodiment of the high frequency characteristic measuring method performed.
11 201100836 【主要元件符號說明】 20 向量網路分析儀 35 下接觸區 21 高頻信號產生器 36 1¾頻電磁波抑 22 切換開關 早兀 23、 24 量測埠 361 、361， 抑制層 25、 26 探針 362 、362， 缺口 27 待測元件 4 高頻特性量測 28、 29 訊號測試模組 法 3 高頻特性量測之 41 準備步驟 直通校正基板 42 校正步驟 31 金屬層 43 量測步驟 32 上絕緣介質層 A 雙側直通電路 33 下絕緣介質層 A1、 Α2、A3 接點 34 上接觸區 1211 201100836 [Description of main component symbols] 20 Vector network analyzer 35 Lower contact area 21 High-frequency signal generator 36 13⁄4 frequency electromagnetic wave suppression 22 Switching switch early 23, 24 Measuring 埠361, 361, suppression layer 25, 26 Needle 362, 362, notch 27 DUT 4 High-frequency characteristic measurement 28, 29 Signal test module method 3 High-frequency characteristic measurement 41 Preparation step Straight-through calibration substrate 42 Correction step 31 Metal layer 43 Measurement step 32 Insulation Dielectric layer A double-sided through circuit 33 lower dielectric layer A1, Α2, A3 contact 34 upper contact area 12