TW201042782A - Manufacturing method for a flip-chip GaN LED - Google Patents

Abstract

This invention is a manufacturing method for a flip-chip gallium GaN LED. A first trench is formed by etching at a pre-determined location of a epitaxial layer which causes part of the baseboard to expose. Moreover, etching at another pre-determined location of the epitaxial layer is to form a second trench by exposing part of a N-type GaN-ohmic contact layer. On the surface of a P-type GaN-ohmic contact layer of one side of the first trench, in the following order, formed are a translucent conducting layer, N-type electrode pad, a first insulated protection layer, a metal reflective layer, and a second insulated protection layer. On the other surface of a N-type GaN-ohmic contact layer of the other side of the first trench, in the following order, formed are a translucent conducting layer, N-type electrode pad, a first insulated protection layer, and a second insulated protection layer. The aforementioned arrangement not only allows the P-type and N-type electrode pads to align flatly and connect electrically to a circuit board, but also effectively avoid an inappropriate rise in forward voltage due to non-participation in conductivity of the metal reflective layer. Hence, power consumption and heat generation are both reduced and the lighting efficiency of the LED is effectively increased.

Description

201042782 VI. Description of the invention: [Technical field of invention] This month is a manufacturing method of a flip-chip GaN light-emitting diode, and a special type of flip-chip light-emitting diode is fixed to a large size. On the heat-conducting substrate of the heat-dissipating area, '^ provides a kind of gallium nitride luminaire diode with high luminescence and high-intensity. [Prior Art] ^ There are quite a lot of types and types of light-emitting devices, and the next generation of green energy-saving trends, light-emitting diodes (L丨g h t

Emitting DiQde'LED) has the advantages of more power saving and small size. The white light emitting diode has been widely used in the backlight of the hand-laid, fingerboard, #_Touch County LCD panel, etc. 'However, the current luminescence of the gallium nitride series materials, / polar body is more important. 〕 At present, the main side of the wire can be made of blue light gallium nitride light-emitting diodes and mixed with fluorescent powder that can emit yellow, green or red light bands, but in view of the sapphire substrate The lack of good thermal conductivity characteristics, so the service life and reliability are greatly affected by temperature. If the current general luminous efficiency, about 5 〇%~6 will be converted into enthusiasm, in addition, plus The phosphor powder is mixed with the epoxy resin or the colloidal material of the silicone resin in a certain ratio and covered around the crystal grains of the light emitting diode, so that heat is easily accumulated inside, so that the luminous efficiency of the light emitting device is lowered, so that 3 201042782 The shortened service life is easy to occur due to defects such as overburning. Therefore, how to effectively and quickly guide and dissipate the heat accumulated by the illuminating device to external cooling and cooling is extremely decisive for the luminous efficiency of the illuminating device (4). Affected by the fact that many products have many heat-dissipating metal substrates plus heat pipes or rotors as the heat-dissipating components of the light-emitting device, but this also tends to reduce the light. The advantages of miniaturization and light weight of the diode. Please refer to the tenth-figure, which can be clearly seen from the figure, which comprises a sapphire substrate A1, an N-type gallium nitride ohmic contact layer A2, a light-emitting layer in 3, a germanium-type gallium nitride-contact layer A 4, and (4) a dispersion current. The light-transmitting conductive layer A5 of the light-emitting efficiency and the P-type electrode pad a6 and the N-type electrode profile A 7 ' are formed on the light-transmitting conductive layer A5*N-type nitrided ohmic contact layer A 2 , respectively. Sapphire; 5 substrate A 1 no i crystal layer - side m edge glue or conductive knee fixed on the bracket A8, and then through the metal wire A9, such as gold wire or electrical connection to the external age! Q, shouting __distributed in the covering body of the knee. The portion of the light emitted by the illuminating layer A3 must be directed to the phosphor by the side of the p-type electrode A6 through the transparent conductive layer a5. The colloid is covered, however, the P-type electrode lining A 6 itself shields part of the light-emitting surface, thereby reducing the luminous efficiency of the light-emitting diode.

In order to solve the shortcomings of the decrease in luminous efficiency due to the shielding of the electrode lining, please refer to the twelfth figure, which can be clearly seen from the figure, U.S. Patent No. 5 5 5 7 1 1 5, which mainly utilizes a flip-chip method to increase an effective light-emitting area thereof, wherein the gallium nitride-based light-emitting diode is sequentially formed with a buffer layer B 2 and an N-type gallium nitride ohmic contact layer β 3 on the sapphire substrate B 201042782 1 An illuminating 4 and a P-type GaN ohmic contact layer B5 are formed in the center, and the P-type GaN ohmic contact layer B 5 is connected to the external thermal substrate through the p-type electrode lining (4) and the luminescent layer B 4 is The side is formed with an N-type electrode B7, and the N-type electrode b7 of the towel is connected to the external_substrate through the n-type electrode pad B8. Although the main light-emitting surface B1 does not have the disadvantage of shielding the light, the structure is utilized. The p-type electrode of the metal structure is generally reflected by the B 6 and N > type electrode lining B 8 because the metal characteristic of the hybrid lining itself tends to increase the forward voltage, and the luminous efficiency is not good. Please refer to the thirteenth riding show, as can be clearly seen from the figure, U.S. Patent No. 6,574,782, which is passed through the heat dissipating block between the LEDs of the LED and the solder joints C11 and C21 of the circuit board C 2 . c 3, such as gold ball or gold tin bump process electrically connected to each other, through the gold ball or gold tin bump process can effectively achieve the effect of heat transfer, but the § hai process has a high cost of missing, another aspect The electrode lining of the conventional flip-chip light-emitting diode has the function of electrically connecting the circuit board and reflecting the light of the luminescent layer to the sapphire substrate, but the metal characteristic of the electrode pad itself is easy. In the case where the forward voltage is raised and the luminous efficiency is not good, although the patent discloses that a metal reflective layer can be formed on the circuit board, such a structure causes the light-emitting layer and the metal reflective layer to be generated due to a long distance. Light decay. Please refer to the fourteenth figure, which can be clearly seen from the figure. It is the Republic of China Patent Notice No. 5 7 3 3 3 0' which includes the sapphire substrate d, 201042782 N-type gallium nitride ohmic contact layer d2 The light emitting layer D3, the P-type gallium nitride ohmic contact layer D4, the light-transmitting conductive layer D 5 and the conductive metal anti-riding D6, and the N-type gallium nitride ohmic contact layer D 2 and the light-transmitting conductive layer d 5 respectively pass through the electrode D 7 And the conductive metal reflective layer D6 is connected to the circuit board D8, wherein in order to avoid electrical conduction of the electrode D7 and the conductive metal reflective layer d6, and reducing the leakage current that may occur in the conductive metal reflective layer D6, further adding the polysilicon The amine (Ρ ο 1 yimide ) insulating layer is in the groove, however, if the polyimide insulating layer D 9 is to be accurately added to the groove, and does not affect the electrode D 7 and the conductive metal reflective layer The relative height of the surface of D 6 is very difficult. When the error of this level is too large, the electrical connection between the light-emitting diode and the circuit board may result in a decrease in yield. Please refer to the fifteenth® 'Cleaning Wafer Huaguan Patent_Certificate No. 5 3 5 0 8 2 4* for the crystallization of the illuminating diode structure, which is based on the upper side of the stupid layer There is a first insect layer Ε1 and a second stray layer Ε2' by the 电极-type electrode lining 3 and the Ν-type electrode pad Ε 4 surface have similar horizontal heights 'but in order to reduce the Ν-type electrode lining 4 and the first The contact impedance of the second stray layer Ε 2 is so that the 电极-type electrode lining 4 is formed into an extended type to form an ohmic contact with the yttrium-type galvanic contact layer Ε 21, although this technique is /, Type electrode switch α 3αν type electrode lining 4 is the same X convenience, the connection between the boards, although it reveals a metal reflective layer 会 $ However, the metal reflective layer is considered to be located in the conductive layer ε_, so still more Conductive, so still can not solve the above-mentioned lack of forward voltage rise, in addition, 201042782 also does not reveal how to further insulate the process technology of protecting the groove edge surface of the die, so there are still some shortcomings. It is easy for the light-emitting diode to generate heat energy due to high power consumption, resulting in reduced luminous efficiency. In the case of the use of polyimine insulation to reduce the increase in the amount of light consumed by the diode, the lack of good performance depends on the poor performance of the P-type electrode pad and the N-type electrode pad. If there is a drop and it is not possible to effectively connect to the board, this will cause problems such as a decrease in yield. Therefore, how to propose a novel flip-chip type light-emitting diode structure and method for the above problems and lack of the prior art has long been the inventor's singularity and the inventor has been engaged in the light-emitting two for many years. The research on the polar body related production and deduction, the idea of thinking and improvement, has been researched and designed by many parties, and finally researched the method of manufacturing improvement to solve the above problems. [Summary of the Invention] ' Therefore, the inventor has designed the flip-chip in view of the above-mentioned shortcomings, which is based on a variety of experiences and has accumulated many years of experience in the industry. Inventor of the method for manufacturing a gallium nitride light-emitting diode. The first object of the present invention is to solve the problem, the reverse electrical conductivity of the recording tool = the metal reflective layer, the valley is easy to generate electricity, and the heat energy is increased due to its golden scale. The light-emitting efficiency is weakened, and the light-transmissive conductive layer is formed on the first and second protective layers with respect to the p-type vaporized recording ohmic contact layer 7 201042782 1 and sequentially processed on the first and Wei protective layers. There is a surface reflection layer and a second insulation guarantee, and then the P-type electrode and the N-type impurity are used to connect the solder joint to the solder joint, and the flip-chip light-emitting diode is manufactured in such a manner that the metal reverse machine does not participate in the conductive The forward voltage of the light-emitting diode can be reduced, the power consumption can be reduced, the heat energy can be effectively avoided, the light ray generated by the oil accumulation can be reduced, and the metal reflective layer is directly formed in the light-emitting diode. The shorter distance between the metal reflective layer and the light-emitting layer can also achieve the effect of effectively improving the luminous efficiency. The purpose of this month is that the inner side of the second groove is sequentially processed to form the first insulating layer and the second insulating layer, so that the two sides of the groove have a stable secret function, and the light is used. The third object of the invention is that the light-emitting diode is a method for combining the material frequency with a large area of high thermal conductivity and the wire guide plate to complement the light-emitting diode. The invention has the advantages of lower manufacturing cost and can accelerate heat dissipation in consideration of higher production cost, and can effectively improve the luminous efficiency of the light-emitting diode and improve the working life thereof. [Embodiment] In order to achieve the above object and effect, the present invention The technical means and its structure adopted by the company are described below, and the functions are as follows. Please refer to the figure-picture, which is the flip-chip GaN-based light-emitting diode of the present invention. The manufacturing process of the body: 201042782 (1 0 0 ) provides a wafer of gas-emitting diode bipolar twin layer 2. (1 0 1) at the preset position of the epitaxial layer 2, a surname is formed to form a caustic base ◦ 0 Exposed part of the first groove 1〇1. (10 2) in the first The trenches 10 i are respectively etched adjacent to the outside and are formed such that the N-type nitrogen tilting layer ii portion is, for example, the plurality of second trenches 10 2 , and the two sides of the second trenches 10 2 respectively have the crystal layer 2 A, 2 B. Q 3) The light-transmitting conductive layer 14 is formed by adding 1 to the surface of the insect crystals 2 and 2B. (10 4) The surface of the partially transparent conductive layer 14 is separately processed to form a p-type (electrode pads 15 and N). Type electrode pad 16. 〇5) The first Ο ^ insulation is formed by the P-type electrode lining 5, the N-type electrode lining 6 , the first trench 101 and the second trench 1 〇 2 The protective layer 17. 1〇6) is adjacent to the p-type electrode pad 丄5 and is opposite to the light-transmitting conductive layer 14 (the one surface is processed to form the metal reflective layer 18. 10 7) on the first insulating protective layer i 7 and the metal The reflective layer 8 is surface-processed to form a second insulating protective layer 19.

(1 〇ON 0) Grinding, ship, cracking, and grain optoelectronic screening are produced separately (independent gallium nitride-based light-emitting diodes 1 grain. 0 9) will separate independent gallium nitride-based light-emitting diodes i The crystal grain is crystallized on the heat conductive substrate 3 with the conductive paste 4. 9 201042782 Please refer to the second to eighth figures, which is clearly shown in the schematic diagram of the process of the first figure, which is attached to the substrate i(10) Forming an N-type gallium nitride ohmic contact layer U, a germanium layer 12 and a ?-type nitrided ohmic contact layer 13 in sequence, and providing a mask for designing at a predetermined position, through exposure and development techniques, to form a first - the surface of the ray i Q i is not photoresist-receiving, and the wafer structure of the remote layer 2 where the photoresist is not disposed is removed in a side manner, so that the first trench 1 〇1 formed by exposing part of the substrate 100 is provided, and another - the predetermined position is ambiguous, through the exposure and blaming technique, so that the second ray 1 Q 2 is not covered with silk coverage, and the wafer structure of the worm layer 2 without the photoresist is removed in a side manner In addition to causing a portion of the N-type gallium nitride ohmic contact layer 11 to be exposed, a second trench i 〇2 is formed. The surface of the P-type gallium nitride ohmic contact layer i 3 is vapor-deposited or plated to form the light-transmitting conductive layer 14 and is respectively exposed to the surface of the transparent conductive layer by exposure, development and metal stripping (1 iit - 〇ff) techniques. Forming a P-type electrode _1 5 and an N-pole pad! 6, and then the light-transmitting conductive layer 14, the P-type electrode pad 15, the N-type electrode pad 6, the first trench 101, and the first trench A first insulating protective layer is formed on the surface of 1Q 2, and the p-type electrode slit 5 and the surface of the electrode lining 16 are exposed through exposure, development and side techniques. Again, the first insulating layer is exposed, developed and gold-dissected. The protective layer 17 is formed with a metal reflective layer i8 with respect to the side surface of the light-transmitting conductive layer 丄4, and then with a P-type electrode, i5, _electricity = pad 16, metal reflective layer i8, and first-insulation The surface of the protective layer _ 7 _ 10 201042782 has a second county layer i 9, and exposes the surface of the P-type electrode pad 15 and the N-type electrode pad 6 by exposure, ruggedness and side technology, and the above process is completed. After 'will grind the substrate 1 〇Q to less than the thickness of the ,, and separate the laser with the laser and the disintegration of each crystal paste. The process of the body grain. Please refer to the ninth figure. It can be clearly seen from the figure that the light-emitting diode is electrically connected to the wire guide 3 through the flip chip, and the heat-conducting substrate 3 can be a heat-conducting effect. A good aluminum, copper or ceramic material is used, and a printed circuit having an electrically isolated positive electrode tab 31 and a negative electrode tab 3 2 is formed on the heat conductive substrate 3, and then the conductive paste 4, such as silver, is formed. The material of the rubber, the solder ball or the solder paste is formed on the upper surface of the positive electrode pad 31 and the negative electrode pad 3 2 by means of dispensing or adhesive, and the electrode pad 15 of the light-emitting diode is formed. And the N-type electrode pad 16 is connected to the positive electrode pad 31 and the negative electrode pad 3 2 of the heat conductive substrate 3 through the conductive paste 4, and finally, the conductive paste 4 is cured, thereby completing the flip-chip light-emitting diode light-emitting device. The light-emitting diode 1 can directly dissipate heat by using a conductive paste 4 having a large heat-dissipating area, such as silver paste or solder paste, and the heat-conductive substrate 3, so that the conduction area of the conventional gold wire or metal bump is too small, so that the conductive area is too small. The lack of heat dissipation, etc., the above method can also reduce manufacturing Sequence and shorten the manufacturing time.

The above substrate 10 may be light-transmitting sapphire, samarium carbide (Sicic acid), zinc oxide (ZN/0), magnesium oxide (Mg〇), gallium oxide (G a 2 O 3 ), aluminum nitride (A). 1G a N), oxidized clock gallium (G a L 11 201042782 !〇), oxidized Na (Alli0) or spinel (spinei) substrate, and the light-transmissive conductive layer 14 may be indium oxide (in2〇3), oxidized Tin (Sn〇2), indium oxide _ (Indium

Molybdenum 〇γ , · ·, , υχ 1 ci es, ΙΜ〇), zinc oxide (zn〇), indium zinc oxide (IZ〇), indium oxide 钸 (cein2 〇3), oxidation surface (Indium Tin 〇 heart 5 ΤΟ ΤΟ) 'nickel (n), gold (Au) double layer structure, · turn (mouth (a) 'gold double layer (four); 铍 (Be), gold double layer structure, and the metal reflective layer 18 can be silver (Ag), One of the materials of the (A1) Rh (Rh) metal or one of H铍, Titanium (Ti) and Chromium (Cr) i, and the other, the first insulating protective layer 17 and the second insulating protection The layer 19 can be an oxygen (Si〇2), a nitrogen cut (Si3N4), a liquid glass, a Teflon (Tef 1〇n), a poly-amine (P〇1Hmide'PI), an Oxide (A12〇3), Titanium oxide (Ti-0), oxygen (Ta2〇5), yttrium oxide (7) 2 ) or a diamond film thereof, or a combination thereof, and the 卩-type electrode pad 15 and the N-type electrode lining 16 may be Titanium, gold, titanium, Ming; collateral, gold or 2 Ming's towel - or the shouting, the above-mentioned only forest (four) preferred implementation of the material of each layer of the L is limited to the scope of the invention, so change, Simplified repair of the burning bulletin and graphic content The same and equivalent structures sentence should be included within the scope of the present invention. Please also refer to the ninth and tenth figures. It can be clearly seen that the first groove 12 201042782 01 and the second groove 1〇2 can be etched into U-shape or V-shape, dance, ▲, and above. The present invention is intended to be illustrative of the embodiments of the present invention, and is not intended to limit the scope of the present invention. Therefore, all modifications and equivalent structural changes are intended to be included in the present invention. As described above, the method for manufacturing the above-described flip-chip gallium nitride light-emitting diode of the present invention has the following advantages: (1) The present invention is formed on the two side surfaces of the metal reflective layer 18, respectively. The first insulating protective layer 17 and the second insulating protective layer 19 prevent the light-transmitting conductive layer 14 and the metal reflective layer 18 from producing a conductive effect, and the metal reflective layer 18 can effectively prevent the metal reflective layer 18 from being electrically conductive. The forward voltage and the power consumption are increased, so that the luminous efficiency of the light-emitting diode is not good, and the metal reflective layer 8 is directly disposed in the light-emitting diode 1 in such a manner that the light-emitting layer can be directly reflected. Light, avoid setting Too Far generated light loss. (2) the crystallized layer 2 of the present invention is etched at a predetermined position to expose a portion of the substrate 1 to form a first trench 1〇1, and then a second trench 1〇2 is etched at another predetermined position, and The epitaxial layers 2 A, 2 B having a common level of height are produced, so that the p-type electrode pad 15 and the N-type electrode pad 16 formed later have the same height, and the light-emitting diode 1 and the heat-conductive substrate can be stabilized. 3 electrical connections to improve the yield of the LED device. 13 201042782

The present invention is such that the first insulating protective layer 17 and the second insulating protective layer i 9 are formed on the (four) layers 2 A, 2 B on the two sides of the second trench i 〇 2 to form the second oxide layer 2 A Between 2 and B, the protection of _determined insulation, 'effectively avoids the loss of reliability of the leakage short circuit that is likely to occur in the crystal manufacturing process of the diode (4).

The light-emitting diode 1 of the present invention is electrically connected to the heat-conducting substrate 3 through the conductive paste 4 having a large area of high thermal conductivity material, so as to accelerate heat dissipation at a lower manufacturing cost, thereby effectively improving the light-emitting diode 2 The luminous efficiency of the polar body 1 'and the light-emitting diode i can pass through the conductive colloid 4 to effectively and efficiently dissipate the heat accumulation, thereby improving the working life thereof. In summary, the method for manufacturing the flip-chip gallium nitride light-emitting diode of the present invention enhances the application of the economy and the application of the product, and submits an application according to law, and hopes to grant the case as soon as possible. In order to protect the inventor's Xin Gu invention 'If there is any doubt in the bureau, please do not hesitate to give instructions, the inventor will try his best to cooperate, and feel really good.

14 201042782 [Simplified diagram. Ming] The first figure is a manufacturing flow chart of the light-emitting diode die of the present invention. The second figure is a schematic view of the epitaxial layer of the light-emitting diode grains of the present invention. The third figure is a schematic view of etching the first trench by the epitaxial layer of the present invention. The fourth figure is a schematic view of etching the second trench by the epitaxial layer of the present invention. The fifth figure is a schematic view showing the formation of a light-transmitting conductive layer, a p-type electrode pad and an N-type electrode pad on the surface of the insect layer. The sixth embodiment is a schematic view of forming a first insulating protective layer and a metal reflective layer on the surface of the light-transmitting conductive layer according to the present invention. The seventh drawing is a schematic view of forming a second insulating protective layer according to the present invention. The eighth figure is a schematic view of the cutting of the light-emitting diode of the present invention. The ninth figure is a schematic diagram of the electrical connection between the light-emitting diode and the conductive substrate of the present invention. The tenth figure is a schematic view of the light-emitting diode of the present invention having a V-shaped first trench. The eleventh figure is a schematic view of the structure of a conventional gallium nitride light-emitting diode. The twelfth figure is a schematic circle of the conventional flip-chip GaN light-emitting diode. The twelfth figure is a schematic structural view of another conventional flip-chip GaN light-emitting diode. The fourteenth figure is a schematic diagram of a re-fabricated flip-chip GaN light-emitting diode. Figure 5 is a schematic view of another conventional flip-chip gallium nitride light-emitting diode. 15 201042782 [Explanation of main components] 1. Light-emitting diode 10 0, substrate 14 101, first trench 15 10 2 Second trench 16 1 1 , N-type gallium nitride ohmic contact layer 17 12 , light-emitting layer 18 13 , P-type gallium nitride ohmic contact layer 19 2, epitaxial layer 3 , thermally conductive substrate 31 , positive electrode pad 3 2 4 Conductive colloid A 1, sapphire substrate A2, N-type gallium nitride ohmic contact layer A7 A 3, light-emitting layer A8 A4, P-type gallium nitride ohmic contact layer A9 A 5, light-transmitting conductive layer A1 0 negative electrode pad, N Type electrode pad, bracket, metal wire, external pin A 6, P-type electrode pad light-transmitting conductive layer P-type electrode pad N-type electrode pad first insulating protective layer metal reflective layer second insulating protective layer 16 201042782 B1, sapphire substrate

B1 1. Light surface B

B 2. Buffer layer B

B 3, N-type gallium nitride ohmic contact layer BB 4, light-emitting layer B C1, light-emitting diode chip 〇 C1 1, solder joint c C 2, circuit board D1, sapphire substrate D 2, N-type gallium nitride ohmic Contact layer D 3 , light-emitting layer D4 , P-type gallium nitride ohmic contact layer O D5 , light-transmitting conductive layer E1 , first epitaxial layer E 2 , second epitaxial layer E 21 , N-type gallium nitride ohmic contact layer E 3 , P-type electrode pad 5 , P-type gallium nitride ohmic contact layer 6 , P-type electrode pad 7 , N-type electrode 8 , N-type electrode pad 2 1 , solder joint C 3 , heat sink block D 6 , Conductive metal reflective layer D 7 , electrode D 8 , circuit board D 9 , polyimide conductive layer E 4 , N-type electrode pad E 5 , metal reflective layer E6 , conductive layer 17

Claims (1)

201042782 VII. Patent application scope: 1. A method for manufacturing a flip-chip nitrided photodiode, the manufacturing steps thereof include: (4) providing a wafer of a gallium nitride-based light-emitting diode crystal layer; (B) Forming a first trench causing the exposed portion of the substrate for the layer pre-mixed butterfly; (C) forming a plurality of second trenches partially exposed by the galvanic contact layer of the gallium nitride adjacent to the first and second portions (D) a light-transmissive conductive layer is formed on the surface of the epitaxial layer, (E) is processed on the surface of the partially transparent conductive layer to form a p-type electrode profile and an N-type electrode pad; (F) is p-type The electrode pad, the N-type electrode pad, the first trench and the second trench are processed to form a first insulating protective layer; (G) adjacent to the p-type electrode pad and processed on one side surface of the transparent conductive layer A metal reflective layer is formed; (H) a second insulating protective layer is formed by processing the surface of the first insulating protective layer and the metal reflective layer. 2. The method for manufacturing a flip-chip gallium nitride light-emitting diode according to claim 1, wherein the second insulating protective layer is formed by grinding, scribing, splitting, and grain photoelectric characteristics. The separation of the independent gallium nitride-based light-emitting diode crystal grains is selected. 3. The method of applying the flip-chip gallium nitride light-emitting diode according to claim 2 of the patent scope 18 201042782 by the method 'where the separated independent gallium nitride neopolar diode is coated with a heat conductive with a conductive colloid Substrate. " 4 = A method for manufacturing a flip-chip nitride photodiode according to claim 3, wherein the P-type electrode of the flip-chip diode and the N-type electrode are Electro-adhesive_positive and negative electrode pads on a thermally conductive substrate. 5. The method for fabricating a flip-chip gallium nitride light-emitting diode according to claim 3, wherein the conductive colloid material is silver paste, solder ball or solder paste. 6. The method for manufacturing a flip-chip gallium nitride light-emitting diode according to the application of the patent scope, wherein the method of forming the first trench and the second trench may be a dry or wet residual technology. [7] The method for fabricating a flip-chip gallium nitride light-emitting diode according to the above-mentioned patent scope, wherein the gallium nitride light-emitting diode wafer layer comprises a GaN contact layer, The luminescent layer and the p-type vaporized ohmic contact layer. The method of manufacturing a flip-chip physicochemical recording light-emitting diode according to the above-mentioned claim, wherein the first trench may be U or a re-type. 9, such as the scope of application for patents! The method for manufacturing a flip-chip gallium nitride light-emitting diode according to the invention, wherein the second trench is of a port or a sigma type. 10. The method of fabricating a flip-chip gallium nitride light-emitting diode according to claim 1, wherein the side depth of the first trench is greater than the depth of the second trench. 11. The flip-chip gallium nitride light-emitting diode according to claim i of the invention, wherein the N-type electrode pad can extend to the surface of the N-Wide-Aluminum contact layer. 1. The method of manufacturing a flip-chip gallium luminescent diode according to the above-mentioned application, wherein the first insulating protective layer completely covers the inner sides of the first trench and the second trench. The method of manufacturing a flip-chip gallium nitride light-emitting diode according to the first aspect of the invention, wherein the metal reflective layer is made of silver, aluminum or tantalum. The method for manufacturing a flip-chip galvanic light-emitting diode according to the above-mentioned patent scope, wherein the metal reflective layer is made of silver, aluminum or tantalum with nickel, platinum, rhodium, titanium or One of the chromium is combined with each other. 15. The method for fabricating a flip-chip gallium nitride light-emitting diode according to the above-mentioned patent range η, wherein the material of the light-transmitting conductive layer may be a nickel or gold double-layer structure in a white and gold double-layer structure. ; bismuth, gold double layer, structure; indium oxide, tin oxide, indium molybdenum oxide, oxidized words, indium zinc oxide, indium oxide or yttrium tin oxide - or a combination thereof. The method for manufacturing a flip-chip gallium nitride light-emitting diode according to the first aspect of the invention, wherein the material of the first insulating protective layer and the second insulating protective layer may be oxidized stone and nitride. One or a combination of ceram, liquid glass, Teflon, poly-imine, oxidized, titanium oxide, oxidized, oxidized or diamond film. 17. The method of manufacturing a flip-chip gallium nitride light-emitting diode according to the above-mentioned patent scope, wherein the material of the germanium electrode pad and the germanium electrode pad can be 20 201042782 for titanium or gold; , aluminum; chromium, gold; one of chromium or aluminum or a combination thereof. Ο twenty one