201041082 * 六、發明說明： 【發明所屬之技術領域】 本發明涉及一種靜電夾盤裝置、使用該靜電夾盤裝置的 .等離子處理裝置及製造靜電失盤裝置的方法。 【先前技術】 圖1A示出現有技術中一種示例性的常規的靜電夾盤裝 置該常規的靜電夾盤裝置1〇8設置於一等離子體處裡室（未 0 顯示）、内。靜電炎盤裝置1〇8包括靜妓盤⑽和由金屬材 料製成的支撐部14(μ其巾’在靜電錢⑽内雜置一電極 15〇電極150外由介電質部包覆。靜電夾盤裝置1〇8由一金 屬陰極基座130支撐。金屬陰極基座130包括射頻輸入164 和冷部通道168。升降頂針孔172被設置於貫穿金屬陰極基座 130和靜電夹盤裝置108。晶圓或襯底（未圖示）放置於靜電 失盤裝置108的上表面（即，靜電夹盤160的介電質部的上 Q 、面）等離子體工藝在晶圓或襯底的上表面上進行，晶圓或 襯底的上表面暴露於雜子處理室的轉子體中。 在等離子體處理反應室中，電磁波的波長會減少到其在 f由空間裏的波長的1/4左右，從而，它的1/4波長會接近 等離子體處理室的典型尺寸。因此，等離子體密度沿整個反 應至並不均勻。例如’圖1B顯示了等離子體密度引起的餘刻 逮率/σ放置於圖1A所示的靜電夾盤裝置上的整個晶圓是 非均勻的。隨著自由空間的激勵頻率的增加’波長會減小，這 '駐波現象在反應室内會變得更加突出。 此外’能產生高等離子體密度的高頻能量也會減少趨膚 3 201041082 深度（skin depth)。因此，趨膚效應會產生在處理室内等離 子體加熱的最強處（即’在放電的邊緣）。 • 人們還發現’在檢查蝕刻後的晶圓或襯底時會發現存在 • 明顯的邊緣效應(edSe effect)，這使整個晶圓或襯底表面的 蝕刻速率不均勻。邊緣效應顯示蝕刻速率在晶圓或襯底邊緣 比其他區域(如中心區域)有相當的增加。 因此，在處理室内等離子體密度的不一致導致處理室内 〇 的工藝參數不同的變化，從而導致處理的襯底的不一致或不 均勻處理（如’等離子體非均勻性、晶圓侧速率的非均句 性、和邊緣蝕刻速率非均勻性）。 【發明内容】 本發明的目的在於提供一種靜電夾盤裝置及其製造方 Ί所述靜電夾盤裝置賴著地改善晶圓邊緣祕刻速率的 不均勻，克服現紐術巾靜電缝裝置域緣效應引起的不 足。201041082 * VI. Description of the Invention: [Technical Field] The present invention relates to an electrostatic chuck device, a plasma processing apparatus using the same, and a method of manufacturing the static loss device. [Prior Art] Fig. 1A shows an exemplary conventional electrostatic chuck device of the prior art. The conventional electrostatic chuck device 1〇8 is disposed in a plasma chamber (not shown). The electrostatic smear device 1〇8 includes a static disk (10) and a support portion 14 made of a metal material (μ's towel' is interspersed with an electrode 15 in the static electricity (10), and the electrode 150 is covered by a dielectric portion. The chuck device 1 8 is supported by a metal cathode base 130. The metal cathode base 130 includes a radio frequency input 164 and a cold portion passage 168. The lift pin hole 172 is disposed through the metal cathode base 130 and the electrostatic chuck device 108. A wafer or substrate (not shown) is placed on the upper surface of the electrostatic loss device 108 (ie, the upper Q, face of the dielectric portion of the electrostatic chuck 160) plasma process on the wafer or substrate On the surface, the upper surface of the wafer or substrate is exposed to the rotor body of the hetero-processing chamber. In the plasma processing chamber, the wavelength of the electromagnetic wave is reduced to about 1/4 of the wavelength in the space from f. Thus, its 1/4 wavelength will be close to the typical size of the plasma processing chamber. Therefore, the plasma density will be uneven throughout the reaction. For example, 'Figure 1B shows the residual density/σ placement caused by plasma density. The entire electrostatic chuck device shown in Figure 1A The wafer is non-uniform. As the excitation frequency of free space increases, the wavelength will decrease, and this 'standing wave phenomenon will become more prominent in the reaction chamber. In addition, the high-frequency energy that can generate high plasma density will also decrease. Skin 3 201041082 Skin depth. Therefore, the skin effect will occur at the strongest point of plasma heating in the processing chamber (ie, 'on the edge of the discharge). • People also found 'inspecting the etched wafer or substrate There will be a significant edSe effect, which will result in an uneven etch rate across the wafer or substrate surface. Edge effects show that the etch rate is higher at the wafer or substrate edge than in other regions (such as the central region). A considerable increase. Therefore, inconsistencies in plasma density in the process chamber result in different variations in process parameters in the process chamber, resulting in inconsistent or uneven processing of the processed substrate (eg, 'plasma non-uniformity, wafer side rate Non-uniformity, and edge etch rate non-uniformity). SUMMARY OF THE INVENTION An object of the present invention is to provide an electrostatic chuck And a manufacturing apparatus of the electrostatic chuck Ί depends significantly improve the nonuniformity of the wafer edge etch rates secret, surgical towels Zealand now overcome the electrostatic field forming device caused by the edge effect is not sufficient.
D ★本發明的另-目的在於提供一種使用該靜電夾盤裝置的 等離子處理駿，該處理裝置能顯著地改善晶圓邊緣祕刻 速率的不均勻。 本發明是通過以下技術方法實現的·· 根據本發_-方面，本發明提供—種靜電缝裝置， 包括支撐部；與支撐部相連接的靜電夹盤，於其内設置有 電極，其中支撐部和靜電夾盤包括具有高電阻率、高導熱性 和低射頻能量損失的介電質材料。 根據本發月的另一方面，本發明提供一種靜電央盤裝 201041082 f、’包括：支撐部，該支撐部包括碳切或氮化銘；與支撐 部連接的靜電越’該靜電她包括三氧化二|§ ;和設置於 靜電失盤内的電極。 . 根據本發_另—方面’本發明提供-婦造靜電夾盤 裝置的方法，包括：提供一支揮部，該支撺部包括介電質材 料:將—靜電夾盤與支撐部相連接，該靜電越包括介電質 材料’該支撑部的介電質材料和靜電夾盤的介電質材料均選 〇 自厌化石夕、氮化紹、二氧化二紹及其混合物；且將-電極燒 結在靜電夾盤内。 根據本發明的再一方面，本發明提供一種等離子處理裝 置’包括： 雜；轉子魏源，向腔體内提供—轉子氣體；與腔體 相連接的陰極基座，與陰極基座相連接的支齡卩；與支樓部 相連接的靜電夾盤，該靜電爽盤内部包括電極；其中，支撐 孙靜電夹盤包括具有高電阻率、高導熱性和低射頻能量損 失的介電質材料；無極基座相連接的射獅，以在腔體内 激勵形成等離子體；和直流龍源，與電極相連接，用於將 〜 晶圓固定在靜電炎盤上。 【實施方式】 =明人經過大量的實驗和研究發現，圖1A所示的現有技 術中靜電夾盤裝置⑽之所以產生明顯的或劇烈的邊緣效 應，是因為其靜電夾盤160下方的支樓部14〇是由金屬材料 製成的’並且其陰極基座13〇也由金屬材料製造而成。當射 頻輸入164從下方饋入等離子處理裝置的反應腔時，由於金 201041082D. Another object of the present invention is to provide a plasma processing apparatus using the electrostatic chuck device which can significantly improve the unevenness of the edge rate of the wafer edge. The present invention is achieved by the following technical method. According to the present invention, the present invention provides an electrostatic sewing device comprising a support portion; an electrostatic chuck connected to the support portion, wherein an electrode is disposed therein, wherein the support The electrostatic chuck includes a dielectric material that has high electrical resistivity, high thermal conductivity, and low RF energy loss. According to another aspect of the present month, the present invention provides an electrostatic central disk package 201041082 f, 'including: a support portion including carbon cut or nitride; the static electricity connected to the support portion is more than the electrostatic Oxidation II|§; and electrodes placed in the electrostatic loss plate. According to the present invention, there is provided a method for providing an electrostatic chuck device, comprising: providing a swivel portion comprising a dielectric material: connecting the electrostatic chuck to the support portion The more the static electricity comprises a dielectric material, the dielectric material of the support portion and the dielectric material of the electrostatic chuck are selected from the group consisting of anaesthesia, nitriding, bismuth dioxide and mixtures thereof; The electrode is sintered in an electrostatic chuck. According to still another aspect of the present invention, the present invention provides a plasma processing apparatus 'comprising: a heterogeneous rotor source, a rotor gas supplied to the cavity; a cathode base connected to the cavity, and a branch connected to the cathode base An electrostatic chuck connected to the branch portion, the electrostatic chuck includes an electrode therein; wherein the supporting electrostatic chuck comprises a dielectric material having high electrical resistivity, high thermal conductivity and low RF energy loss; The lion connected to the pedestal is excited to form a plasma in the cavity; and the DC source is connected to the electrode for fixing the ~ wafer to the electrostatic disk. [Embodiment] = Mingren After a large number of experiments and studies, it is found that the prior art electrostatic chuck device (10) shown in Fig. 1A produces a significant or severe edge effect because of the branch below the electrostatic chuck 160. The portion 14 is made of a metal material and its cathode base 13 is also made of a metal material. When the RF input 164 is fed from below into the reaction chamber of the plasma processing apparatus, due to gold 201041082
屬材料會接近100%地反射賴能量的饋入，所以射頻輸入164 的射頻能量基本上只能從金屬陰極基座⑽的外顺設置的 介電材料的包覆元件（未圖示）及金屬陰極基座130的外周 與反應腔的内側壁之間形成的空間（未圖示）向放置晶圓的 方位送入，在射頻能量到達支撐部140時，同理，由於支撐 部140也是金屬材料’並且加上金屬陰極基座⑽和支撐部 140之間形成有接近9〇度直角的臺階，因此，射頻能量也基 本上只能在金敎撐部14〇料顯向晶_人射頻能量。 發明人發現，在射頻能量輸入的入射波和反射波(散射場）的 混合侧下’金屬支撐部⑽的存在使得關表面的電場分 佈變传非常不均自，形成邊緣效應，金屬陰極基座1別和支 撐部140之間形成的臺階也進—步加綱成強_邊緣效應。 為了解決上述問題，本發明提供一種靜電爽盤裝置，包 括支撐部和與支撐部相連接的靜電夾^靜電缝内設置^ 電極。該錢部和靜電夾盤包括具有高電阻率、高導敎性矛 低射頻能量損失的介電質材料1選地，支撐部制斑靜^ 夾盤的材料相同或補近的材料。通過該設計，可以使 頻能量在饋人晶圓時被大量地送人由介電f材料製成的奸 部和靜電缝科會被反轉，㈣，減少邊緣效應，使曰牙 圓表面的電場線分佈變得均勻。 曰曰 本發明的實關涉及-種靜電夾錄置、使用該靜 盤震置的轉子處理裝置及製造靜電夾錄置的方法。其 該靜電失餘㈣靜電錄和靜電縫的讀部件是由高 阻率、高導熱性和低射概量損耗的介電赌师成。:靜 6 201041082 t錢裝置的伽是能有效地改善财技術巾由邊緣效應引 _不足，使表面的電磁場分佈比常規靜電縫裝置的 ·. 電磁場分佈更加均勻。其結果是，晶圓侧速率，特別是晶 - 圓邊緣的餘刻速率的不均勻性被顯著地改善。 本發明的實施方式將在圖2中詳細說明。圖2顯示了本 發明-種實施方跋供的制本發明靜電鍾裝置的等離子 處理裂置2GG。應該理解，裝置_僅僅是示例性的，裝置 〇 2GG可以包括更少或更多的組成元件，或該組成元件的安排可 能與圖2所示不同。 等離子處理裝置200包括腔室2〇4和一個設置於腔室2〇4 内的靜電夾盤208。待加工件、晶圓或襯底（未顯示）放置於 處理室204内的靜電夾盤208的表面212。反應/處理氣體源 (未顯示）向腔室204供應反應/處理氣體，反應/處理氣體 被射頻功率源216激勵而形成等離子體218。靜電夾盤208 由陰極座220支撐，陰極座220支撐基座230和支撐部件 Ο 240 °靜電夾盤208於其内包括一電極25〇。直流電壓源254 與電極250相連接來給電極250施加電壓，實現從靜電夾盤 208上夹持和釋放或襯底。 : 在使用中，射頻功率源216產生等離子體218，直流電壓 源254將高壓直流電源施加到電極250來夾持晶圓至靜電夾 盤208。等晶圓被夾持後，等離子體工藝處理會在腔室204 内進行。等處理完成後，射頻功率源216被關閉，通過直流 電壓源254對電極250施加反向直流電壓來使晶圓從靜電夾 盤208上釋放。 201041082 目3A示出根據本發明實施例的—種靜電爽盤裝置110。 靜電夾盤裝置110包括基座23G、支樓部24G和靜電夹盤勝 - 士圖3A所不基座230包括射頻輸入264和冷卻通道268。 升降頂針孔。272貫穿基座23〇、支樓部件24〇和靜電夹_。 如上所述晶圓/襯底放置於靜電夾盤2〇8的上表面。 在關所福魏方式巾，娜卩铷和魏央盤應 由间電阻率、科熱性和低射翻耗的介電質材料製成。在 〇 *種實施方式中，該介電質材料的電阻率為大約，至， 歐姆*釐米。可選用的示例性材料包括:碳化矽、氮化鋁、三 氧化；等。應當理解’其他的具有高電阻率、高導熱、低 射頻損耗的陶瓷材料也可以被使用。 在另外種實把例中，支撐部件240和靜電失盤2〇8由 相同的材料製成。應該理解，支撐部件24〇和靜電爽盤观 也可以用不同的材料製成，每—個材料是高電阻率、高導熱 性和低射頻損耗的介電質材料。在支樓部240和靜電夾盤208 〇 封目同的材料製成的實施彳种，兩者可以被直接地或間接地 製成一個整體。 "在支撐部件240和靜電夾盤2〇8由不同的材料製成的實 ]中這兩個材料可以被枯結在一起。例如，一種梦膠枯 劑可以將支擇部件240和靜電夾盤208連接在-起。支樓部 也可以與基座230枯接在一起。該同一石夕片膠枯劑也 可用於將支撐部240和基座230連接在一起。 $某一具體的實施例中，支撐部件240是由碳化矽或氮 化鋁製成’靜電失盤观由三氧化二鋁製成。電極25〇被燒 8 201041082 結於靜電爽盤208内。 • = 實施财，域部件和魏夾盤屬 =疋5:12毫米之間的钟值，而靜電炎盤观的厚度約 半.5宅米。在更具體的—個實施例中，靜電夾盤為約1 208 Η電極250的厚度小於或等於❶.5毫米。在靜電失盤 的厚1 部件240由_嶋在—起的實施例巾，膠粘劑 予尻約為8微米。The genus material will be close to 100% of the reflection energy input, so the RF energy of the RF input 164 can only be substantially provided from the metal cathode base (10) outside the dielectric material covering component (not shown) and metal A space (not shown) formed between the outer circumference of the cathode base 130 and the inner side wall of the reaction chamber is fed into the orientation in which the wafer is placed. When the radio frequency energy reaches the support portion 140, the same reason, since the support portion 140 is also a metal material. And a step which is formed at a right angle of about 9 degrees is formed between the metal cathode base (10) and the support portion 140. Therefore, the radio frequency energy can also substantially illuminate the crystal RF energy in the gold support portion 14. The inventors have found that the presence of the metal support (10) under the mixed side of the incident and reflected waves (scattering fields) of the RF energy input makes the electric field distribution of the off-surface very variable, forming an edge effect, a metal cathode pedestal. The step formed between the 1 and the support portion 140 is also stepped into a strong_edge effect. In order to solve the above problems, the present invention provides an electrostatic refreshing device comprising a support portion and an electrostatic chuck connected to the support portion. The money portion and the electrostatic chuck include a dielectric material having a high resistivity, a high conductivity, and a low RF energy loss, and the material of the support portion is the same or close to the material of the chuck. Through this design, the frequency energy can be reversed when feeding the wafer, and the adult and the electrostatic sewing materials made of dielectric material f will be reversed. (4), the edge effect is reduced, and the surface of the tooth is rounded. The electric field line distribution becomes uniform.实 The practical aspects of the present invention relate to a type of electrostatic chuck recording, a rotor processing apparatus using the static disk, and a method of manufacturing an electrostatic chuck. The electrostatic residual (4) electrostatic recording and electrostatic slit reading components are made up of dielectric gamblers with high resistivity, high thermal conductivity and low incidence. : Static 6 201041082 The gamma of the money device can effectively improve the financial technology towel by the edge effect. The electromagnetic field distribution of the surface is more uniform than that of the conventional electrostatic sewing device. As a result, the wafer side rate, particularly the non-uniformity of the crystal-circle edge, is significantly improved. Embodiments of the invention will be described in detail in FIG. Fig. 2 shows a plasma treatment crack 2GG of the electrostatic clock device of the present invention supplied by the present invention. It should be understood that the device _ is merely exemplary, the device 〇 2GG may include fewer or more constituent elements, or the arrangement of the constituent elements may be different from that shown in Fig. 2. The plasma processing apparatus 200 includes a chamber 2〇4 and an electrostatic chuck 208 disposed in the chamber 2〇4. A workpiece, wafer or substrate (not shown) is placed on surface 212 of electrostatic chuck 208 within processing chamber 204. A source of reaction/treatment gas (not shown) supplies reaction/treatment gas to chamber 204, which is excited by RF power source 216 to form plasma 218. The electrostatic chuck 208 is supported by a cathode holder 220 that supports the base 230 and the support member. The 240 ° electrostatic chuck 208 includes an electrode 25 therein. A DC voltage source 254 is coupled to the electrode 250 to apply a voltage to the electrode 250 to effect clamping and release or substrate from the electrostatic chuck 208. In use, RF power source 216 generates plasma 218, which applies a high voltage DC power source to electrode 250 to clamp the wafer to electrostatic chuck 208. After the wafer is held, the plasma process is performed in the chamber 204. After the processing is complete, the RF power source 216 is turned off, and a reverse DC voltage is applied to the electrode 250 through the DC voltage source 254 to release the wafer from the electrostatic chuck 208. 201041082 Item 3A shows an electrostatic sink device 110 in accordance with an embodiment of the present invention. The electrostatic chuck device 110 includes a base 23G, a branch portion 24G, and an electrostatic chuck. The base 230 of the Figure 3A includes a radio frequency input 264 and a cooling passage 268. Lift the ejector pinhole. 272 penetrates the base 23〇, the branch member 24〇, and the electrostatic clamp _. The wafer/substrate is placed on the upper surface of the electrostatic chuck 2〇8 as described above. In the Guanfu Wei method, Nayong and Weiyang discs should be made of dielectric materials with electrical resistivity, thermal sensitivity and low-explosion consumption. In an embodiment, the dielectric material has a resistivity of about ohms*cm. Exemplary materials that may be selected include: tantalum carbide, aluminum nitride, trioxide, and the like. It should be understood that other ceramic materials having high electrical resistivity, high thermal conductivity, and low RF loss can also be used. In another example, the support member 240 and the electrostatic loss plate 2〇8 are made of the same material. It should be understood that the support member 24 and the electrostatic sink can also be made of different materials, each of which is a dielectric material having high electrical resistivity, high thermal conductivity, and low radio frequency loss. The embodiment in which the branch portion 240 and the electrostatic chuck 208 are sealed with the same material can be directly or indirectly formed as a whole. "The two materials can be dried together in the case where the support member 240 and the electrostatic chuck 2〇8 are made of different materials. For example, a gelatin agent can connect the support member 240 and the electrostatic chuck 208. The branch portion can also be detached from the base 230. The same stone tablet can also be used to join the support portion 240 and the base 230 together. In a particular embodiment, the support member 240 is made of tantalum carbide or aluminum nitride. The electrostatic dish is made of aluminum oxide. The electrode 25 is burnt 8 201041082 It is enclosed in the static cooling plate 208. • = implementation of the financial, domain components and Wei chucks = 疋 5: 12 mm between the clock, while the thickness of the electrostatic smear is about half a .5 house meters. In a more specific embodiment, the electrostatic chuck has a thickness of about 1 208 Η electrode 250 that is less than or equal to 0.5 mm. In the embodiment 1 of the thick 1 part 240 of the electrostatic loss, the adhesive was about 8 microns.
於is^3B不出放置於圖3A的本發明的靜電夾盤208與放置 面A的傳統的靜電夾盤裝置⑽上的兩種晶圓/概底的截 208的^擬的電場分佈。如圖3B所示，圖3A的靜電夾盤 士 μ >暴的均—性細丨靖示的傳統的靜電夾盤裝置108 相比被顯著地改善。 ^發日猶電錢裝置、使賴魏夾錄韻等離子處 、及製造靜電央盤裝置的方法可以_於製造半導體晶 /孟屬阳圓以及各種朗面板。本專概明書中所提及的 待加工件、晶®、襯鱗說法健為神m的說明。 立本發明是參照具體實例描述的，但其所有方面都應為示 j生而非限疋性的。技術人員可以發現很多硬體、軟體和固 ㈣不敝合均可適时應財發明。此外，對於-般技術 人員而言’在瞭解了本發明所公_特徵和實施方式後，本 發明的其他應財式也可以較為地被想到。本發明所述 實施=式的各種構思和/或元件可財轉子體反應室技術 中被單獨地或被組合地制。本說㈣中所述的特徵和實施 方式應田僅理解為示例性的說明，本發明的權利範圍由下列 201041082 權利要求所限定。 本說明書中包含的附圖，作為本說明書的一部分，示出 了本發明的實施方式’並與說明書一起用於解釋和描述本發 明的原理和實施。附圖旨在以一種概略的方式描繪所述實施 例的主要特徵。附圖的目的並不在於描述實際實施方式的每 一詳細特徵’也不在於描繪所述元件的真正尺寸，並且元件 不是按比例繪製。The electric field distribution of the two wafers/bottoms of the conventional electrostatic chuck device (10) placed on the electrostatic chuck 208 of the present invention of Fig. 3A and the surface A is not shown. As shown in Fig. 3B, the electrostatic chuck of Fig. 3A is significantly improved compared to the conventional electrostatic chuck device 108 of the uniformity of the storm. ^ The method of making a money device, making the plasma of the Laiwei folder, and the method of manufacturing the electrostatic central disk device can be used to manufacture semiconductor crystals/Meng Yangyang and various Lang panels. The descriptions of the workpieces to be processed, the crystals, and the scales mentioned in this special book are the instructions of God. The invention has been described with reference to specific examples, but all aspects thereof are intended to be illustrative and not limiting. Technicians can find that many hardware, software, and solids (4) can be invented at the right time. Further, other general financial formulas of the present invention may also be conceived by those skilled in the art after having understood the features and embodiments of the present invention. The various concepts and/or elements of the implementations of the present invention can be made individually or in combination in the rotor body reaction chamber technology. The features and embodiments described in the above description are to be construed as illustrative only and the scope of the invention is defined by the following claims. The drawings, which are included in the specification, are in the The drawings are intended to depict the main features of the described embodiments in a schematic manner. The figures are not intended to describe each of the detailed features of the actual embodiments, nor the actual dimensions of the elements, and the elements are not drawn to scale.
【圖式簡單說明】 圖1A是現有技術中的靜電夾盤的示意圖。 圖1B是使關1A所示的靜電她進行_時的晶圓的钱刻 速率示意圖。 圖 2是本發明實施例的等離子體處理室的示意圖 圖3A是本發明實施例的靜電夹盤的示意圖。 速率示意圖。 【主要元件符號說明】 108靜電夾盤裝置 110靜電失盤裴置 130金屬陰極基座 140支撐部 15 0電極 160靜電夹盤 164射頻輸入 168冷卻通道 172升降頂針孔 200專離子處理裳置 204腔室 208靜電夾盤 212表面 216射頻功率源 201041082 218等離子體 230基座 250電極 264射頻輸入 272升降頂針孔 220陰極座 240支撐部件 254直流電壓源 268冷卻通道 〇 〇 11BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a schematic view of an electrostatic chuck in the prior art. Fig. 1B is a schematic diagram showing the rate of engraving of the wafer when the static electricity shown by 1A is turned on. Figure 2 is a schematic view of a plasma processing chamber of an embodiment of the present invention. Figure 3A is a schematic view of an electrostatic chuck of an embodiment of the present invention. Rate map. [Main component symbol description] 108 electrostatic chuck device 110 electrostatic loss plate set 130 metal cathode base 140 support portion 15 0 electrode 160 electrostatic chuck 164 RF input 168 cooling channel 172 lifting thimble hole 200 special ion processing skirt 204 Chamber 208 electrostatic chuck 212 surface 216 RF power source 201041082 218 plasma 230 pedestal 250 electrode 264 RF input 272 lifting thimble hole 220 cathode holder 240 support member 254 DC voltage source 268 cooling channel 〇〇 11