TW201041061A - Thermal processing apparatus - Google Patents

Abstract

A thermal processing apparatus includes a chamber for accommodating a semiconductor wafer and a radiant fitting. The radiant fitting includes a plurality of first radiant sources having a first reflectivity positioned in a center region of the radiant fitting and a plurality of second radiant sources having a second reflectivity. The second reflectivity is larger than the first reflectivity.

Description

201041061 VI. Description of the Invention: [Technical Field] The present invention relates to a heat treatment apparatus, and more particularly to a heat treatment apparatus which can solve the problem of center hot of a heated crystal. _ [Prior Art] The integrated circuit (hereinafter referred to as 1C) is fabricated by repeating multiple semiconductor processes such as thin film deposition, lithography, etching, and ion implantation on a germanium wafer to obtain the required components. And 1C constructed by it. Temperature is one of the most important control parameters when performing these semiconductor processes, especially during heat treatment processes such as film formation, annealing, oxidative diffusion, vacuum sputtering, etching, and nitriding. In recent years, as semiconductor processes have moved toward large-area, high-density, and single-wafer processing, rapid thermal processing (RTP) with a lower thermal budget has been made. The related equipment is of great importance. For example, a rapid thermal oxidation (thin-dielectric growth) process, growth of amorphous silicon, silic〇n oxide, and nitrite (silicon nitride) rapid thermal chemical vapor deposition (rapid 3 201041061 thermal chemical vapor deposition (RTCVD) process, and ion implantation rapid ion annealing (rapid th_ai armeaHng 'RTA) process, etc., can be utilized The RTp machine is completed.

i? Please refer to Fig. 1 and Fig. 2 at the same time. Figure i is a schematic diagram of a conventional RTp machine; and Figure 2 is a plan view of the Korean luminaire in Figure 1. As the first! As shown in Fig. 2, the RTp machine ι includes a reaction chamber 1, a wafer carrier 104, and a wafer 110 disposed just above the wafer carrier. The light fixture 110 is comprised of a plurality of single- and arranging bulbs 112 and a plurality of single-piece shades 114. The bulb u2 system is controlled by different power sources and the degree of heating, such as the central portion of the bulb 112a being controlled by the power source, while the surrounding portion of the bulb 112b is controlled by another source. The surface of the conventional lampshade 114 is gold-plated to reflect the (four) energy emitted by the bulb 112 to achieve the effect of the filament. As the first! _ shows that a 曰 α 6 system can be placed on the wafer carrier 1 〇 4, by light bulbs Μ. Heat treatment such as thermal oxidation is carried out.

Machine: Γ Figure, Figure 3 shows the surface growth of the wafer 106 after the hot phase of the conventional RTP = port (10) (four) - oxygen cut thickness map $, the χ axis refers to the radial position of the wafer 1 〇 6 The midpoint of the χ axis is denoted by 〇", which means S PI 1 Λ /: -t- ''' the midpoint of the surface diameter; Y 卓 depends on the thickness of the wafer 106 and the hard layer of the chyle. Due to the reflectivity of the lampshade, since the firing energy has the characteristics of omnidirectional (〇mni_d(10)Μ), the central portion of the wafer 106 106 201041061, which corresponds to the lucky light bulb n2a, will be more peripheral Partial absorption is more _ 的 at the center = minute - as shown in the figure, it can be observed that the crystal|] 1 〇 6 t central part, the field, this ° according to the third part. From this, it can be seen that the thickness of the wafer 106, the thickness of the wafer is very higher than that of the central portion of the wafer, and the temperature is relatively high: = hook, especially the problem of heat generation. Month, ',, and page back to the surrounding part, that is, the central 3 Ο one 〇 because RTP technology is widely used for half-materials, and wafer 106 = temperature will affect the process and finished product f, such as The thickness of the film formation, the diffusion profile of the ion implantation, etc., therefore, how to achieve the uniformity of the temperature of each part of the heated wafer is the most important subject in the RTP technology [Analysis] A. Therefore, the purpose of the present invention It is a heat treatment machine that provides a solution to the central heat problem of a heated wafer. According to the present invention, the scope of the patent is provided as a heat treatment, and the heat treatment apparatus comprises - for accommodating - the reaction of the semiconductor wafer, to - and -1. The Wei ray luminaire comprises a plurality of first light sources having a first reflectance and disposed at a central portion of the illuminating illuminator, and a plurality of second radiation sources having at least a second reflectivity. It is worthwhile > the second reflectivity is greater than the first reflectivity. 5 201041061 According to the heat treatment apparatus provided by the present invention, since the first wheel source having a lower reflectance is disposed in the central portion of the wheel illuminator, in practical use, relative to the central portion of the wafer to be heated, This radiation can be reduced to the central portion of the wafer and to address the central thermal issues that arise when the wafer is heated. [Embodiment] The heat treatment device provided by the present invention may be a rapid thermal processing (rtp) device, a UV curing system, a physical vapor deposition (PVD degas) device, or a chemical mechanical device. A process system having a heat treatment device, such as a chemical mechanical polishing (CMP clean bake) device. 4 is a schematic view of a preferred embodiment of the heat treatment apparatus provided by the present invention; and in the preferred embodiment, the heat treatment apparatus is an RTP system. As shown in FIG. 4, the heat treatment apparatus 200 includes a reaction chamber 202 for accommodating a semiconductor wafer 220 and a radiation lamp 300. The reaction chamber 202 holds the semiconductor wafer by a wafer carrier 204. 22〇. In order to avoid the phenomenon that the radiation conduction discontinuity occurs due to different materials when the wafer carrier 204 is in contact with the peripheral region of the semiconductor wafer 220, the portion of the wafer carrier 204 that is in contact with the semiconductor wafer 220 may also be used with the semiconductor wafer 22 . 〇 Same material. The reaction chamber 202 further includes a susceptor 206, and a plurality of temperatures disposed in the pedestal eagle of 6 201041061 for measuring the temperature of the semiconductor wafer 22g (perceptual probe), the temperature probes 2 〇 8 series In conjunction with the junction, the temperature information provided by the temperature probe 208 is received back to the radiant luminaire 300. Next, please refer to (4) Figure 5 and (9), the plane of the radiant luminaire 300 provided by the fifth 亍 图 . ^ ^ 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 例 弟 弟 弟 弟 弟 弟 弟. Those who are familiar with the art should be 2+ only - a brief schematic 'where the number and arrangement of each subject can be increased or decreased according to the process', and is not limited to the disclosure as shown in Figure 5 and Figure 6. 'Shengchang's luminaire 3' contains a plurality of beta emitters 310' having a -first reflectivity. The crane luminaire employer also includes a plurality of second illuminating sources 32 〇 having at least a second reflectivity, and the second reflectance is greater than the first reflectance. (4) The luminaires can be as shown in Figure 5 = 'for-disc design' and the first Korean source 3 〇 is similar to the second ray source, 丨 丨 ® ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( - The light source is placed in the center of the n-lamp 3 (8). In other words, in reality. When the heat treatment apparatus 200 is used, the first light source 31 is in the center of the semiconductor crystal. [5 is a] and the second light source 32 is disposed around the periphery of the first source 310 in a concentric arrangement. It is worth noting that both the first round source 310 and the second lucky source 320 comprise separate high-power bulbs, each of which is controlled by the same voltage to adjust its radiant energy. The source 320 can be grouped in a concentric manner controlled by different electric power 201041061, that is, the second rounds 32 〇 can be further divided into a plurality of concentric ring regions, respectively, and each second in each concentric ring region is adjusted. The light energy of the top of the light source. ...see » 6 figure. The second source 32 〇 contains - the second bulb milk, and the second bulb 322 can be formed by a surface treatment - the metal surface, so that the second is exhausted. In this preferred Shisaki, the metal table bread contains gold stalks formed by gold processing. The first source includes a first bulb 312 ′ of a = St rate, which may also have a metal surface. The reflectivity of the metal contained in the 312 is less than the reflectivity of the second bulb package. In the preferred embodiment, the refractive index of the == genus is less than gold, thereby resulting in a first _ two reflectivity. For example, the first bulb 312t = 2: the second bulb 322 having a full self-reflectance. Or, the first light bulb has a metal surface and the first light bulb W is the opposite surface of the gold oxide surface, including metal or weight: the rate is not: the surface of the surface 322 of the bulb is - flat 4 thick ^ surface ' and second The bulb rate is lower than the second reflectivity: 吏4 The first light source training the first reflection 8 201041061 Please continue to refer to the section & 咏^ lampshade (10) (four) 314 and the figure. Each of the first 324 includes a first 324, and the first lampshade 3M 盥 320 has a second lamp cover 314 and a second lamp cover 324 respectively corresponding to the 3 Π and the second bulb 314. The second lampshade 324 package belongs to the younger brother: Light: It can be used as a technical supplier, and (4) its surface contains gold. The first lampshade 314 may comprise a crucible; where = and the metal surface comprises all of the good e蚪玄/ to the surface of the genus, the celestial genus of the octopus is lower than the second lampshade 3 2 4 3M The reflectivity of Μ (4). In the preferred embodiment, the first cover can be a metal oxide surface, and the metal oxide μ is an oxide of a metal of the second lamp cover 324, such as the first light source. The first reflectance of 31〇 is lower than the second reflectivity of the second crane source 320. Regardless of the first lampshade 314 & 4 yv, is an oxide, it can be - rough surface, surface metal or gold white j horse thick "surface, while the surface of the second lamp cover 324 smooth surface" to further reduce - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The first light bulb 312 and the power source end 3 of the = 314 package 314 are disposed in a first direction 220, and the first direction is perpendicular to the semiconductor wafer. According to the preferred embodiment The radiant luminaire 300 further includes a source barrier (called en) 33 〇 disposed on the side of the first light source 31 对于 source 32 for the semiconductor wafer 22 如. Such as the ^ 射 9 201041061 source screen f As early as 33Θ, there is a honeycomb map showing the first-(four) m31:=rr heart-shaped pattern 'for the burst source So: ^ source "Ο - part 332, and corresponding to the second spoke part eight 33 ^ part 334 . The second portion 334 has a metal surface; the 2 h 332 may have a metal surface, and the surface of the metal portion 332 having a reflectance lower than that of the third surface may be the second surface of the second. Or the first part of the oxide of the metal of the first portion 332. The surface of the 1 minute 334 can be a rough surface, and the surface of the heart is a smooth surface, the first reflectivity of 31 。. Next, please refer to the _ 7 figure, the thickness of the oxidized hair layer obtained after the silking of the 7th figure is the advantage of the heat treatment machine provided in the second; = 佳贯施 at the custom RTP she A system will wafer 106

Curve B, on the other hand, indicates that the wafer 220 is heat-treated after the heat treatment in the table: the surface of the wafer is di-2-=:=::_, which is different from the semiconductor 曰: Reflectivity, in particular, source, first surface 3 core; one: two low metal or metal oxide # one has a reflectivity compared to the compound surface, so that 彳 == \ silky ^ metal oxygen in the first - wheel source The first reflectivity of 310 is lower than the first reflectance of source 320 of the second radiation 10 201041061. As shown in Fig. 7, it can be found that the radiant energy that can be provided due to the decrease in the reflectance of the first-light source 310 is also reduced, because the central portion of the semiconductor wafer 22 () that is read is observed. The thickness of the formed oxidized stone layer is significantly lower than that produced by conventional techniques. That is, the present invention

ί, the heat treatment device 2GG can effectively solve the problem of the heat of the technical towel. T t €) i, in summary, according to the present invention, the heat treatment package L is provided by the surface of the wheel source or the surface of the lampshade having a low quarter, the ratio of the radiation source, and the corresponding surface of the heated wafer center/knife. The radiant energy provided by the source is reduced, so that the energy of the light f to the central portion of the thermal SSKI can be reduced. A problem of avoiding heat in the central portion of the heated wafer, that is, the heat treatment device according to the present invention can reach =', And the uniformity of the temperature of the yen, and the design of the radiation source in the heat exchanger without the heat treatment, the design of the radiation source, the efficiency of the processing device and the quality of the finished product. The above description is only the preferred embodiment of the present invention, and all the equivalent changes and repairs made in accordance with the application of the present invention should belong to the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the structure of a conventional rapid heat treatment machine. Figure 2 is a plan view of the heating radiant luminaire in Figure 1. 11 201041061 Degrees The thickness of the oxygen-cut layer obtained by thermal oxidation of different wafer surfaces is schematically shown in Figure 4. Figure 5 is a heat treatment device provided by the present invention - Fig. 5 is a radiant lamp provided in the preferred embodiment of the present invention = is a cross-sectional view along line AA in Fig. 5, a partial cross-sectional view of the line is different Oxide stone obtained after thermal oxidation of the wafer surface: 'thickness curve. — [Main component symbol description] 100 rapid thermal processing machine 102 104 wafer carrier 106 110 radiation lamp 112 112a central portion bulb 112b 114 lamp cover 200 heat treatment device 202 204 wafer carrier 206 208 temperature probe 210 220 semiconductor wafer 300 310 first radiation source 31a

Reaction chamber wafer bulb around part bulb reaction chamber base controller radiation lamp power supply terminal 12 201041061 31b light output end 312 first light bulb 314 first light cover 320 first-round source 322 second light bulb 324 second light cover 330 radiation source barrier 332 Part I 334 Part II

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Claims (1)

201041061 VII. Patent application scope 丨 A heat treatment device comprising: - reacting to accommodate a semiconductor wafer; and a radiation lamp comprising: a plurality of first radiation sources having - |5 ^ the reflectivity of the brother, and is disposed in a central portion of the field of the field luminaire; and) a plurality of second sources of radiation having at least a stem J ^ a reflectivity, and the second reflectance is greater than the First - reflectivity. σ ^ If you apply for a patent range! The radiation source described in the item is a device in which the first source of radiation is arranged in a radial manner. 3. If the heat treatment is carried out as described in item 1 of the patent application scope, the Korean source contains at least "the first" and the other is the first and the other The first lampshade, #守珩一辐射源 comprises a plurality of _^蚯 soaps, and the Haidi-4 bubbles and the corresponding second lampshade. 1 as claimed in claim 3, the bulb and the first lamp, the device, wherein the first rate. The first reflectance and the second reflectance are obtained. 5. The light bulb has a metal surface, a ',,, a treatment I, wherein the second lithium metal contains gold. 14 201041061 7. The heat treatment according to claim 3, wherein the bulb has a metal oxide surface. ^ Heat Treatment Shocks as described in Item 7 of the Secretary of the Qing Dynasty 5 The oxide system contains gold oxide. And wherein the first portion of the metal is as claimed in claim 3, the bulb has a rough surface. The heat treatment of the third aspect of the patent claim, the t? lampshade and the second lampshade respectively have the first reflection; wherein: the first rate reflects the second mask t The heat treatment device of claim 1, wherein the crucible 1 has a metal surface and the metal comprises gold. Waiting for the gold. The heat treatment device according to the U.S. Patent Application No. 5, wherein the metal surface is a metal surface, and the reflectance of the metal is small, wherein the heat treatment device is as described in claim 1 201041061 The lampshade contains a metal oxide surface. 14. The heat treatment apparatus of claim 13, wherein the complex oxide comprises gold oxide. The heat treatment device of the above-mentioned item, wherein the ninth lamp cover comprises a rough surface, and the heat treatment device of the invention, wherein the radiation includes A radiation source screen is disposed on a side of the second radiation source such as the first radiation source 对于4 for one side of the semiconductor wafer. The heat treatment apparatus of claim 5, wherein the radiation source screen IV has a honeycomb pattern or a concentric pattern for exposing the first radiation source and the second radiation source. • Heat treatment as described in item i of the scope of the patent: temperature probes - used to measure the semiconductor: = degrees. 2 The heat treatment device according to claim 18, further comprising a control (4) system and a temperature probe connected to the temperature information of the isothermal coat. 4th source with the 16th 201041061 - round source. 20. The heat treatment device according to claim 1, wherein the heat treatment device is a rapid thermal processing (RTP) device, a UV curing system, a physical vapor deposition degassing (physical vapor) Deposition, PVD degas) device or CMP clean bake device. Eight, the pattern: 17