201034528 六、發明說明： 【發明所屬之技術領域】 本發明係關於使處理氣體的電漿激發而對被處理基板 施行預定處理的電漿處理裝置。 【先前技術】 該類電漿處理裝置係被使用在例如對半導體晶圓、 φ FPD (平面顯示器）基板等被處理基板之蝕刻、灰化、電 漿蒸鍍等各種製程處理。以如上所示之電漿處理裝置而言 ，例如有在介電質的上部設置平面狀的螺旋狀線圈，將該 ' 螺旋狀線圈的兩端接地，在其一端與接地間連接高頻電源 而構成者（參照例如專利文獻1)。藉此，由高頻電源將 高頻供給至螺旋狀線圈，以其高頻之例如1/2波長（或 1/4波長）共振，藉此感應駐波，在介電質的下部發生 感應電場而激發處理氣體的電槳。 [先前技術文獻] [專利文獻] [專利文獻1]日本特開平07-296992號公報 [專利文獻2]日本特開2007-142444號公報 【發明內容】 (發明所欲解決之課題） 但是’近年來隨著半導體元件更進一步的微細化、多 -5- 201034528 層化的要求，在如上所示之製程處理中，亦要求進行損傷 更少的處理。例如藉由自由基來進行製程處理時，係要求 促進藉由該自由基所起的反應’而極力減低離子損傷。亦 即，過剩的離子會引起晶圓中之層間材料的混合、氧化物 破壞、污染物質侵入、形質變化等損傷，因此爲了避免發 生而提出各種辦法。此外，在以高精度規定選擇比的蝕刻 處理等中，以避免造成低選擇性的離子衝擊爲佳。已知如 上所示之離子損傷係可藉由例如儘可能激發電位低的電漿 而有效抑制。 但是，如上述電漿處理裝置所示，在將螺旋狀線圈的 兩端接地時，即使以高頻的1/2波長（或1/4波長）使 其共振而藉此感應駐波’亦使螺旋狀線圈上的電壓成分一 定成爲正與負的任一者，由於不會有正與負的電壓成分雙 方同時存在的情形，因此在螺旋狀線圈上經常殘留電壓成 分。因此，由於電漿中的電容耦合成分大量發生，因此無 法避免離子損傷的發生。 此外，爲了減低如上所示之電漿中的電容耦合成分， 若減少殘留在螺旋狀線圈的電壓成分即可，因此如專利文 獻1之記載所示藉由使用低電感的螺旋狀線圈，亦可減低 電漿中的電容耦合成分。但是，若使用低電感的螺旋狀線 圈，所被激發的磁場會變弱，結果難以發生較強的感應耦 合電漿，電漿密度亦會降低。 其中，在專利文獻2中係設置捲繞在可減壓之縱長反 應容器的外側的螺旋狀線圈，對該螺旋狀線圈供給預定波 -6- 201034528 長的高頻，以例如全波長模式、1/2波長模式等使其共 振而藉此感應駐波，在反應容器內使感應電場發生而激發 處理氣體的電漿。藉此，藉由波長調整電路，相位電壓與 逆相位電壓以相位電壓切換點爲交界呈對稱的方式來調整 電壓波形，藉此在該相位電壓的切換電位爲零的節點中， 可激發感應性耦合電漿。 但是，此是以縱向捲繞的螺旋狀線圈的天線元件，才 φ 可藉由波長調整電路，使相位電壓與逆相位電壓以相位電 壓的切換點爲交界呈對稱的方式調整波形。相對於此，若 爲平面狀線圈的天線元件，不同於以縱向捲繞的螺旋狀線 圈的情形，在同一平面上隨著由內側端部朝向外側端部， 其直徑會逐漸變大。因此，相位電壓與逆相位電壓在相位 電壓切換點的內側的路線與外側的路線中會電抗有所不同 ，因此無法以該點爲交界呈對稱的方式來調整波形。因此 ，並無法將如上所示之專利文獻2之螺旋狀線圈之情形下 • 的技術照原本應用在平面狀線圈的情形下。 因此，本發明人係鑑於如上所示之問題而硏創者，其 目的在提供一種可輕易形成電漿電位低、且更爲安定之高 密度電漿的電漿處理裝置。 (解決課題之手段） 爲了解決上述課題，根據本發明之一觀點，提供一種 電漿處理裝置，係藉由在經減壓後的處理室內生成處理氣 體的感應耦合電漿，而對被處理基板施行預定的電漿處理 201034528 的電漿處理裝置’其特徵爲具備有：設在前述處理室內， 且載置前述被處理基板的載置台；對前述處理室內導入前 述處理氣體的氣體供給部；將前述處理室內進行排氣而減 壓的排氣部；以與前述載置台相對向的方式透過板狀介電 質而配設的平面狀高頻天線；以覆蓋前述高頻天線的方式 而設的屏蔽構件；及將用以在前述板狀介電質與前述載置 台之間生成前述感應耦合電漿的高頻施加至前述高頻天線 的高頻電源，前述高頻天線係由將兩端開放，並且將中點 _ 或其附近接地，以來自前述高頻電源的高頻的1/2波長 進行共振的方式所構成的天線元件所構成。 如上所示之藉由本發明，天線元件係構成爲將兩端開 - 放並且將中點或其附近接地，以來自高頻電源之高頻的1 /2波長使其共振，由此在天線元件上的電壓成分雖然大 小些微不同，但是一定同時存在正與負’因此該等彼此相 抵而以天線元件全體而言’電壓成分係變小。藉此’電漿 中的電容耦合成分亦可減小’因此可減低因電漿所造成的 ◎ 離子損傷。 此外，以可調整前述天線元件與前述屏蔽構件的距離 爲佳。藉此，藉由調整天線元件與屏蔽構件的距離’可改 變該等間的雜散電容，因此無須改變天線元件的物理性長 度’即可調整天線元件的共振頻率。此外’藉由調整天線 元件與屏蔽構件之間的雜散電容，可調整天線元件的電性 長度，因此可使天線元件的尺寸、形狀等的自由度大幅擴 大。 -8 - 201034528 此外’以可調整前述天線元件與前述板狀介電質的距 離爲佳。藉此’由於可改變天線元件與電漿的距離，因此 可使天線元件與電漿之間的電容耦合度改變，而可調整電201034528 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a plasma processing apparatus for exciting a plasma of a processing gas to perform a predetermined treatment on a substrate to be processed. [Prior Art] This type of plasma processing apparatus is used in various processes such as etching, ashing, and plasma evaporation of a substrate to be processed such as a semiconductor wafer or a φ FPD (planar display) substrate. In the plasma processing apparatus as described above, for example, a planar spiral coil is provided on the upper portion of the dielectric material, and both ends of the 'helical coil are grounded, and a high-frequency power source is connected between one end and the ground. The constructor (see, for example, Patent Document 1). Thereby, the high frequency power source supplies the high frequency power to the spiral coil, and resonates at a high frequency thereof, for example, 1/2 wavelength (or 1/4 wavelength), thereby sensing the standing wave, and generating an induced electric field in the lower portion of the dielectric substance. The electric paddle that excites the processing gas. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 07-296992 (Patent Document 2) Japanese Laid-Open Patent Publication No. 2007-142444 (Summary of the Invention) With the further miniaturization of semiconductor components and the requirement of multi--5-201034528 stratification, it is also required to perform less damage processing in the process processing as described above. For example, when the process is carried out by a radical, it is required to promote the reaction by the radical, and the ion damage is minimized. In other words, excessive ions cause damage such as mixing of interlayer materials in the wafer, destruction of oxides, intrusion of contaminants, and change in shape. Therefore, various methods have been proposed in order to avoid occurrence. Further, in an etching treatment or the like which specifies the selection ratio with high precision, it is preferable to avoid ion collision which causes low selectivity. It is known that the ion damage as shown above can be effectively suppressed by, for example, exciting a plasma having a low potential as much as possible. However, as shown in the above-described plasma processing apparatus, when both ends of the spiral coil are grounded, even if the resonance is resonated at a high frequency of 1/2 wavelength (or 1/4 wavelength), the standing wave is induced. The voltage component on the spiral coil must be either positive or negative, and there is no case where both positive and negative voltage components are present at the same time. Therefore, the voltage component is often left on the spiral coil. Therefore, since a large amount of capacitive coupling components in the plasma occur, ion damage cannot be avoided. In addition, in order to reduce the capacitive coupling component in the plasma as described above, it is only necessary to reduce the voltage component remaining in the spiral coil. Therefore, as described in Patent Document 1, it is also possible to use a low-inductance spiral coil. Reduce the capacitive coupling component in the plasma. However, if a low-inductance spiral coil is used, the excited magnetic field becomes weak, and as a result, a strong inductively coupled plasma is less likely to occur, and the plasma density is also lowered. In Patent Document 2, a spiral coil wound around the outer side of the decompressible longitudinal reaction container is provided, and a high frequency of a predetermined wave -6-201034528 is supplied to the spiral coil, for example, in a full wavelength mode. The 1/2 wavelength mode or the like resonates to induce a standing wave, and an induced electric field is generated in the reaction container to excite the plasma of the processing gas. Thereby, the voltage waveform is adjusted by the wavelength adjustment circuit such that the phase voltage and the reverse phase voltage are symmetric with the phase voltage switching point as a boundary, whereby the sensing can be excited at a node where the switching potential of the phase voltage is zero. Coupled plasma. However, this is an antenna element of a helically wound helical coil, and the waveform can be adjusted by the wavelength adjustment circuit so that the phase voltage and the reverse phase voltage are symmetric with respect to the switching point of the phase voltage. On the other hand, in the case of the antenna element which is a planar coil, unlike the case of the spiral coil wound in the longitudinal direction, the diameter gradually increases as the inner end portion faces the outer end portion on the same plane. Therefore, the phase voltage and the reverse phase voltage have different reactances in the route inside the phase voltage switching point and the outer route, and therefore the waveform cannot be adjusted in such a manner that the point is symmetric with respect to the boundary. Therefore, it is not possible to apply the technical photograph of the case of the helical coil of Patent Document 2 as shown above to the case of a planar coil. Accordingly, the inventors of the present invention have in view of the above problems, and an object thereof is to provide a plasma processing apparatus which can easily form a high-density plasma having a low plasma potential and which is more stable. Means for Solving the Problems In order to solve the above problems, according to an aspect of the present invention, a plasma processing apparatus is provided which is configured to process a substrate by inductively coupling a plasma of a processing gas in a decompressed processing chamber. A plasma processing apparatus for performing a predetermined plasma treatment 201034528 is characterized in that: a mounting table provided in the processing chamber and on which the substrate to be processed is placed; and a gas supply unit that introduces the processing gas into the processing chamber; An exhaust unit that exhausts and depressurizes the inside of the processing chamber; a planar high-frequency antenna that is configured to transmit a plate-shaped dielectric so as to face the mounting table; and is provided to cover the high-frequency antenna a shielding member; and a high-frequency power source for applying a high frequency for generating the inductively coupled plasma between the plate-shaped dielectric and the mounting table to the high-frequency antenna, wherein the high-frequency antenna is opened by both ends Further, the midpoint _ or its vicinity is grounded, and is constituted by an antenna element configured to resonate from a high frequency 1/2 wavelength of the high-frequency power source. As described above, according to the present invention, the antenna element is configured to open-and-release both ends and ground the midpoint or its vicinity to resonate with a high frequency of 1 /2 wavelength from the high-frequency power source, whereby the antenna element Although the voltage components are slightly different in size, there must be positive and negative at the same time. Therefore, the voltage components are reduced by the entire antenna element. Thereby, the capacitive coupling component in the plasma can also be reduced, thereby reducing the ion damage caused by the plasma. Further, it is preferable to adjust the distance between the antenna element and the shield member. Thereby, the stray capacitance between the antenna elements can be changed by adjusting the distance between the antenna element and the shield member, so that the resonance frequency of the antenna element can be adjusted without changing the physical length of the antenna element. Further, by adjusting the stray capacitance between the antenna element and the shield member, the electrical length of the antenna element can be adjusted, so that the degree of freedom in size, shape, and the like of the antenna element can be greatly expanded. -8 - 201034528 Furthermore, it is preferable to adjust the distance between the aforementioned antenna element and the aforementioned plate-shaped dielectric. Thereby, since the distance between the antenna element and the plasma can be changed, the degree of capacitive coupling between the antenna element and the plasma can be changed, and the electric power can be adjusted.
Hfr /丄 梁電位。 此時’亦可具備有：藉由調整前述屏蔽構件之高度而 調整前述天線元件與前述屏蔽構件的距離的屏蔽高度調整 機構；及藉由調整前述高頻天線之高度來調整前述天線元 # 件與前述板狀介電質的距離的天線高度調整機構。藉此， 以藉由屏蔽高度調整機構來調整屏蔽構件之高度的簡單操 作’即可調整天線元件的共振頻率。此外，以藉由天線高 度調整機構來調整高頻天線之高度的簡單操作，即可調整 電漿電位。 此外，亦可在前述高頻電源的輸出側設置高頻功率計 ’按照藉由該高頻功率計所檢測的高頻電力來控制致動器 ’且調整屏蔽構件之高度，以使天線元件的共振頻率成爲 ® 最適的方式進行自動調整。藉此，可更爲簡單地將天線元 件的共振頻率調整爲最適。 . 此外，前述天線元件最好爲螺旋線圈狀。若爲平面狀 且爲螺旋線圈狀的天線元件，不同於以縱向捲繞的螺旋狀 線圈的情形，在同一平面上隨著由內側端部愈朝向外側端 部，其直徑會逐漸變大。因此，若將天線元件的中點或其 附近作爲接地點，在由內側端部至接地點的線路與由接地 點至外側端部的線路，電抗有所不同，因此天線元件上的 電壓波形，距天線元件的接地點爲其內側的線路與其外側 -9- 201034528 的線路嚴謹而言並未形成爲對稱，雖有些微，但兩者的波 形並不相同。因此，雖有些微，但在天線元件會殘留電壓 成分。在如上所示的情形下，藉由本發明，例如以天線元 件與電漿的距離變長的方式來調整高頻天線的高度，藉此 可將電漿電位減小。藉此，可以不會受到殘留在天線元件 的些微電壓成分的影響的方式來生成電漿。 (發明之效果） 藉由本發明，將天線元件構成爲將其兩端開放並且將 中點或其附近接地而以來自高頻電源之高頻的1/2波長 使其共振，藉此可提供可輕易形成電漿電位低且安定之高 密度的電漿的電漿處理裝置。 【實施方式】 以下參照所附圖示，針對本發明之較佳實施形態詳加 說明。其中，在本說明書及圖示中，針對實質上具有相同 功能構成的構成要素，係標示相同的元件符號，藉此省略 重複說明。 (電漿處理裝置之構成例） 首先，一面參照圖示，一面說明本發明之實施形態之 電漿處理裝置100之構成例。在此，列舉藉由對平面狀高 頻天線施加高頻電力而在處理室內所激發的處理氣體的電 漿，對被處理基板例如半導體晶圓（以下亦僅稱之爲「晶 -10- 201034528 圓」）W施行預定的電漿處理的感應耦合型電漿處理裝置 爲例。第1圖係顯示本實施形態之電漿處理裝置100之槪 略構成的剖面圖，第2圖係由上方觀看設在電漿處理裝置 100之高頻天線140者。電漿處理裝置1〇〇係具備有金屬 製（例如鋁製）形成爲筒狀（例如圓筒狀）的處理室（ chamber) 102。其中，處理室1〇2的形狀並非侷限於圓筒 狀。亦可爲例如角筒狀（例如箱狀）。 ❹ 在處理室102的底部設有用以載置晶圓W的載置台 1 1 0。載置台1 1 0係以鋁等成形爲大致柱狀（例如圓柱狀 )。其中，關於載置台110的形狀，亦並非侷限於圓柱狀 ' 。亦可爲例如角柱狀（例如多角柱狀）。其中，雖未圖示 ，但是在載置台110係可視需要而設置藉由庫侖力來吸附 保持晶圓W的靜電吸盤、加熱器或冷媒流路等溫度調整 機構等各種功能。 在處理室1 02的頂棚部，例如以與載置台1 1 〇相對向 • 的方式設有由石英玻璃或陶瓷等所構成的板狀介電質104 。具體而言，板狀介電質104係形成爲例如圓板狀，以閉 塞形成在處理室102之頂棚部的開口的方式予以氣密式安 裝。 在處理室102設有供給用以處理晶圓W之處理氣體 等的氣體供給部120。氣體供給部120係構成爲例如第1 圖所示。亦即，在處理室102的側壁部形成有氣體導入口 121，在氣體導入口 121透過氣體供給配管123連接有氣 體供給源122。在氣體供給配管123的途中介在有控制處 201034528 理氣體流量的流量控制器，例如質量流量控制器1 24、開 閉閥126。藉由如上所示之氣體供給部120，來自氣體供 給源122的處理氣體係藉由質量流量控制器（MFC) 124 而被控制成預定流量，由氣體導入口 121被供給至處理室 1 02 內》 在第1圖中爲簡單說明，將氣體供給部120以一系統 的氣體管線來表現，但是氣體供給部120並非侷限於供給 單一氣體種類的處理氣體的情形，亦可爲供給複數氣體種 類來作爲處理氣體者。此時，亦可設置複數氣體供給源而 以複數系統的氣體管線來構成，而在各氣體管線設置質量 流量控制器。此外，在第1圖中係以將氣體供給部120構 成爲由處理室1 02的側壁部供給氣體的情形爲例，但是並 非一定侷限於此。例如亦可構成爲由處理室102的頂棚部 供給氣體。此時，亦可例如在板狀介電質104的例如中央 形成氣體導入口，自此供給氣體。 以藉由如上所示之氣體供給部120而供給至處理室 102內的處理氣體而言，例如在氧化膜的蝕刻中係使用含 有C1等的鹵素系氣體。具體而言，當對Si〇2膜等氧化矽 膜進行蝕刻時，係使用chf3氣體等作爲處理氣體。此外 ，當對Hf〇2、HfSi〇2、Zr〇2、ZrSi〇4等高介電質薄膜進 行蝕刻時，使用BC13氣體作爲處理氣體、或使用BC13氣 體與〇2氣體的混合氣體作爲處理氣體。 在處理室102的底部係透過排氣管132連接有用以排 出處理室102內之雰圍氣的排氣部130。排氣部130係藉 -12- 201034528 由例如真空泵所構成，可將處理室102內減壓至預定的壓 力。在處理室102的側壁部形成有晶圓搬出入口 134’在 晶圓搬出入口 134設有閘閥136。當在搬入例如晶圓W時 ，打開閘閥136而藉由未圖示的搬送臂等搬送機構而將晶 圓W載置於處理室102內的載置台11〇上’關閉閘閥136 來進行晶圓W的處理。 在處理室102的頂棚部係在板狀介電質104的外側面 φ (上側面）配置有平面狀的高頻天線140，以覆蓋該高頻 天線140的方式設有大致筒狀（例如圓筒狀）的屏蔽構件 160。其中，屏蔽構件160的形狀並非侷限於圓筒狀。可 ' 將屏蔽構件1 60的形狀形成爲例如角筒狀等其他形狀，但 ' 是以配合處理室102的形狀爲佳。在此，由於將例如處理 室102形成爲大致圓筒狀，因此配合此使屏蔽構件160亦 形成爲大致圓筒狀。此外，處理室102若爲大致角筒狀， 最好屏蔽構件1 60亦形成爲大致角筒狀。 ❿ 高頻天線140係利用複數夾持體144來夾持由例如銅 、鋁、不銹鋼等導體所構成的螺旋線圈狀的天線元件142 而成。夾持體1 44係例如第2圖所示形成爲棒狀，將3個 夾持體144由天線元件142的中央附近以放射線狀配置在 其外側。 在天線元件142連接有高頻電源150。由高頻電源 1 5 0對天線元件142以預定的功率供給預定頻率（例如 27.12MHz)的高頻，藉此在處理室102內形成感應磁場 。藉此，被導入至處理室102內的氣體被激發而生成電漿 -13- 201034528 ，且執行灰化處理、蝕刻處理、成膜處理等對晶圓所進行 的預定的電漿處理。由高頻電源150所被輸出的高頻並非 侷限於27.12MHz。亦可爲例如13.56MHz、60MHz等。但 是，必須按照由高頻電源150所被輸出的高頻來調整天線 元件142的電性長度。 其中，關於天線元件142的具體構成，詳如後述。此 外，屏蔽構件160係可藉由致動器168來作高度調整。此 外，高頻天線140亦可藉由致動器148來作高度調整。該 等詳細內容如後所述。 在電漿處理裝置100連接有控制部（全體控制裝置） 200，藉由該控制部200來控制電漿處理裝置100的各部 。此外，在控制部200連接有操作部210，其由操作人員 爲了管理電漿處理裝置100而進行指令之輸入操作等的鍵 盤、或將電漿處理裝置100的運轉狀況可視化予以顯示的 顯示器等所構成。 此外，在控制部200連接有記憶部220，其記憶有供 利用控制部200的控制來實現以電漿處理裝置1 〇〇所執行 的各種處理之用的程式或爲了執行程式所需的配方（ recipe )資料等。 在記憶部220係除了用以執行例如晶圓製程處理的複 數製程處理配方之外，另外記憶有用以進行處理室內之清 淨處理等所需處理的配方等。該等配方係將控制電漿處理 裝置1〇〇之各部的控制參數、設定參數等複數參數値加以 彙整者。例如製程處理配方係具有例如處理氣體的流量比 -14- 201034528 、處理室內壓力、高頻電力等參數値。 其中，該等配方可記憶在硬碟或半 亦可在被收容在 CD-ROM、DVD等可 讀取的記憶媒體的狀態下裝設在記憶部 控制部200係根據來自操作部210 部220讀出所希望的製程處理配方來控 在電漿處理裝置100之所希望的處理。 φ 操作部210的操作來編輯配方。 (高頻天線之構成例） ' 在此，一面參照圖示，一面說明本 線140之具體構成例。高頻天線140係 所示將天線元件142的兩端形成爲自E 並且可形成以捲繞方向的長度的中點或 之爲「中點」）爲接地點（ground )之 亦即，天線元件1 42係以由高頻電 預定頻率（例如27.12MHz)爲基準， /2波長進行共振（在半波長模式下進 設定長度、捲繞直徑、捲繞間距、匝！ M2的電性長度係藉由基準頻率的 度’亦即作爲基準頻率之27.12MHz中 倍的長度。 其中，天線元件142亦可以管狀、 導體記憶體，此外 搬性之可藉由電腦 220的預定位置。 的指示等，由記憶 制各部，藉此執行 此外，可藉由來自 實施形態之高頻天 構成爲例如第2圖 目端 142a、142b， 其附近（以下僅稱 1 / 2波長的駐波 源150所被供給的 以該基準頻率的1 行共振）的方式來 敦。例如天線元件 2倍進行共振的長 的1波長的1 /2 線狀、板狀等任何 -15- 201034528 形狀來構成。在天線元件1 42的捲繞間距爲相同的情形下 ，以導體間距離較大者，可取得較大耐電壓的方面較爲有 利。因此，天線元件142的形狀若由耐電壓的觀點來看， 相較於形成爲厚度較大的管狀，形成爲厚度較小的板狀在 取得較大導體間距離方面較爲有利。在欲使天線元件142 的捲繞間距更爲狹窄時，若由耐電壓的觀點來看，亦以形 成爲板狀者較爲有利。 此時，供給來自高頻電源150之高頻的供電點，可爲 比接地點較接近內側或外側均可，以例如阻抗爲50 Ω方 面爲佳。供電點亦可形成爲可變。此時，亦可藉由電動機 等而自動變更供電點。 藉由如上所示之天線元件142，若由高頻電源150將 基準頻率（例如27.12MHz)的高頻施加至高頻天線140 而以半波長模式使其共振時，在某一瞬間如第3圖所示施 加至天線元件1 42的電壓V係形成爲中點（接地點）爲 零、其中一方端部成爲正的峰値、另一方端部成爲負的峰 値的波形。相對於此，施加至天線元件142的電流I係與 電壓波形作90度相位偏移，因此形成爲中點（接地點） 爲最大、兩端部爲零的波形。 此時，按每個高頻的正負周期而瞬時電容彼此朝相反 方向作增減，因此施加至天線元件142的電壓V與電流I 的波形係分別成爲如第4圖所示。亦即，關於電壓V，係 形成藉由在天線元件142上所發生的正負電壓成分而相抵 而使平均電壓變得非常小的半波長模式的駐波。相對於此 -16- 201034528 ，關於電流I，係在天線元件142上形成中點（接地 爲最強、僅有正或僅有負的電流成分所造成的駐波。 藉由如上所示之駐波，如第5圖所示在天線元件 的中央附近發生具有最大強度的垂直磁場B，因此藉 處理室102內激發如第5圖所示以垂直磁場B爲中心 形電場E而生成甜甜圈狀的電漿P。而且，被施加至 元件142的平均電壓非常小，因此電容耦合度極弱， φ 可生成電位低的電漿。 但是，若如第6圖所示將天線元件1 42的內側 142a與外側端部142b之雙方接地，且在外側端部 . 與接地間連接高頻電源150時，第3圖所示之電壓 ' 電流I的波形會成爲相反。亦即，由高頻電源150對 天線140施加基準頻率（例如27.12MHz)的高頻而 波長模式使其共振時，在某一瞬間係如第6圖所示被 至天線元件142的電壓V係形成爲中點（接地點） φ 大、兩端部爲零的波形。相對於此，施加至天線元件 的電流I係與電壓波形作90度相位偏移，因此形成 點（接地點）爲零、其中一方端部成爲正的峰値、另 端部成爲負的峰値的波形。 如上所示，將天線元件142的兩端接地（第6圖 且以與將天線元件142的中點接地的情形（第3圖） 同的半波長模式使其共振時，以接地點爲交界，在天 件1 42的內側部與天線元件1 42的外側部係形成爲經 相反方向的磁場。藉由該相反的磁場，在處理室102 點） 142 此在 的圓 天線 因此 端部 1 42b V與 高頻 以半 施加 爲最 142 爲中 -方 )， 爲相 線元 常呈 內在 -17- 201034528 大致相同平面內的附近形成2個例如第5圖所示之圓形電 場。而且該2個圓形電場的旋轉方向經常相反，因此會有 彼此互相平擾而使所生成的電漿不安定之虞。 相對於此，若爲將天線元件142的中點作爲接地點的 第3圖的情形，如上所述在處理室102內所激發的圓形電 場爲一個且恒爲單向，亦不會有互相干擾的相反方向的電 場。因此，當以天線元件142的中點爲接地點時，與將天 線元件1 42的端部作爲接地點的情形相比，可形成更加安 @ 定的電漿。 此外，當將天線元件142的兩端接地時（第6圖）， 係在共振狀態下的天線元件142上殘留電壓成分，因此會 ' 在電漿中發生大量電容耦合成分。此點由於當將天線元件 ’ 142的中點作爲接地點的第3圖時，如上所述在共振狀態 下的天線元件142上的電壓成分非常小，因此在電漿中難 以發生電容耦合成分。因此，在進行損傷較少的電漿處理 時，以將天線元件1 42的中點作爲接地點的情形（第3圖 ◎ )較爲有利。 爲了減低如上所示之電漿中的電容耦合成分，若減少 殘留在天線元件142的電壓成分即可。因此，在將天線元 件142的兩端接地時（第6圖），係藉由使用低電感的天 線元件142，亦可減低電漿中的電容耦合成分。但是，若 使用低電感的天線元件142，所激發的磁場會彎弱，結果 難以發生較強的感應耦合電漿。相對於此，當以天線元件 142的中點作爲接地點時（第3圖），由於不需要減低電 -18- 201034528 漿中的電容耦合成分，因此亦可使用高電感的天線元件 142。愈使用高電感的天線元件142，愈可形成高磁場， 因此可形成更強的感應耦合電漿。因此，爲了形成更爲高 密度的電漿，以將天線元件142的中點作爲接地點的情形 (第3圖）較爲有利。 如上所示’在本實施形態之高頻天線1 40中，係以將 天線元件142的兩端作爲自由端142a ' 142b並且將捲繞 0 方向的長度的中點作爲接地點（ground )，而以1 / 2波 長模式使其共振之極爲簡單的構成，可輕易地形成電漿電 位低且更爲安定的高密度‘電漿。 • 但是，爲了在本實施形態中使天線元件142以1 / 2 • 波長模式共振，如上所述必須使天線元件1 42的電性長度 正確地配合基準頻率（在此爲27·12ΜΗζ)的1/2倍的長 度。亦即，必須使天線元件142的共振頻率正確地配合。 但是，正確地製作天線元件142的物理性長度並不容 ❹ 易。此外，天線元件142的共振頻率不僅天線元件142所 具有的固有的電抗，連例如第7圖所示之天線元件142與 屏蔽構件160之間的雜散電容（stray capacitance)亦會 影響。因此，即使可正確地製作天線元件142的物理性長 度，亦會有因安裝誤差等而在天線元件142與屏蔽構件 160的距離產生誤差，而無法獲得按照設計的共振頻率的 情形。 此點，在上述將天線元件142的端部作爲接地點時（ 第6圖），亦可在該接地點安裝例如可變電容器，藉此來 -19 - 201034528 調整天線元件142的電性長度。但是，在將天線元件142 的中點作爲接地點時（第3圖），即使在天線元件1 42的 中點與接地間連接可變電容器，不僅使因電容器所造成的 損失變大而不具優點，若插入可變電容器，若將該C値減 小，則不滿足與高頻電源1 50之整合條件的可能性會變高 ，相反地若加大C値，則在可變電容器流通大電流而使其 本身因耐力不足而發生破損的可能性變高。 因此，在本實施形態中，可調整屏蔽構件160的高度 ，藉此調整天線元件142與屏蔽構件160之間的距離而使 雜散電容改變，藉此可調整天線元件142的共振頻率。此 外，在本實施形態中，亦可調整高頻天線140的高度，藉 此藉由調整電漿與天線元件142的距離即可調整電漿電位 〇 以下，一面參照圖示，一面詳加說明如上所示之屏蔽 構件160、高頻天線140的高度調整機構。第7圖係將第 1圖所示之高頻天線140附近的構成加以放大的圖。第 8A圖、第8B圖係說明調整屏蔽構件160之高度時之作用 的圖。第8A圖係降低屏蔽構件160的高度的情形，第8B 圖係提高屏蔽構件160的高度的情形。第9A圖、第9B 圖係說明調整高頻天線140之高度時之作用的圖。第9A 圖係降低高頻天線1 40的高度的情形，第9B圖係提高高 頻天線140的高度的情形。 首先，針對屏蔽構件160之高度調整機構的具體構成 例加以說明。如第7圖所示屏蔽構件1 60係由固定在處理 -20- 201034528 室102之頂棚部的大致筒狀（在此係配合處理室i 〇2的形 狀爲大致圓筒狀）的下部屏蔽構件162、及以滑動自如的 方式設在該下部屏蔽構件162之外側的上部屏蔽構件164 所構成。上部屏蔽構件164係形成爲上面閉塞、下面形成 開口的大致筒狀。 上部屏蔽構件164係藉由設在處理室1〇2之側壁部的 致動器168而上下滑動驅動。具體而言，亦可例如以可分 φ 別將驅動棒169上下驅動的電動機來構成複數致動器168 ，將各驅動棒169的前端分別安裝在朝上部屏蔽構件164 的外側突出的突出部166。 藉此，藉由各致動器168的驅動棒169，使上部屏蔽 構件164上下驅動，藉此可調整屏蔽構件160與高頻天線 140的距離（上部屏蔽構件164的上面與天線元件142的 距離）D。 具體而言，使致動器168驅動而將上部屏蔽構件164 〇 由第8A圖所示位置提高至第8B圖所示位置，藉此使屏 蔽構件160與高頻天線140的距離D變長。藉此，由於 雜散電容C變小，因此可以天線元件142的電性長度變長 的方式調整共振頻率。 相反地，若降低上部屏蔽構件164，即可縮短屏蔽構 件160與高頻天線140的距離D。藉此，由於雜散電容C 會變大，因此可以天線元件142的電性長度變短的方式調 整共振頻率。其中，以屏蔽構件160的高度調整機構而言 ，並不限於如上所述者。例如致動器1 68亦可爲1個。 -21 - 160 201034528 如上所示，藉由本實施形態，藉由調整屏蔽構件 的高度，可改變天線元件142與屏蔽構件160之間的 電容C，因此無須改變天線元件142的物理性長度， 調整天線元件142的共振頻率。 而且，利用僅調整屏蔽構件160高度的簡單操作 可輕易地調整共振頻率，而以所希望的頻率使其共振 如進行使利用最大外徑320mm、捲繞間距爲20mm的 線圈狀銅管所構成的天線元件142以27.12MHz的 波長共振的實驗的結果’僅進行10mm〜100mm左右 蔽構件160的高度調整，即可在±5%〜±10%的範圍 整共振頻率。 此外，可藉由調整天線元件142與屏蔽構件160 的雜散電容C來調整天線元件142的電性長度，因此 天線元件142的尺寸、形狀等的自由度大幅擴大。亦 在本實施形態之電漿處理裝置100中，可使用各種尺 形狀的天線元件。除了例如第10圖所示之角型天線 142以外，亦可使用橢圓等形狀的天線元件。 此外，由於天線元件142的尺寸、形狀等的自由 大，可進行與所需電漿尺寸相對應的天線元件142的 。例如可按照晶圓W的直徑而自由地設計天線元件 的尺寸、形狀。此外，藉由將捲繞間距與共振頻率最 ，可使電漿尺寸的自由度大幅增加。 其中，由於可調整屏蔽構件160的高度，若屏蔽 160的高度過低而與天線元件142之間的距離過於接 雜散 即可 ，即 。例 螺旋 1/2 之屏 內調 之間 可使 即， 寸、 元件 度擴 設計 142 適化 構件 近時 201034528 ，可藉由在屏蔽構件160與天線元件142之間置入介電質 來防止異常放電。 接著，針對高頻天線140之高度調整機構的具體構成 例加以說明。如第7圖所示高頻天線140係藉由設在處理 室102之側壁部的致動器148而上下滑動驅動。具體而言 ，亦可例如以可分別將驅動棒149上下驅動的電動機來構 成複數致動器148，將各驅動棒149的前端安裝在高頻天 φ 線140的支持構件146。此外，致動器168並不一定要設 置，亦可以手動使上部屏蔽構件164本身上下驅動。 此時，支持構件146係在高頻天線140的夾持體144 以朝其外側突出的方式設置，各支持構件146的前端係由 形成在屏蔽構件1 60以上下延伸的縫隙狀孔洞朝其外側突 出，而將驅動棒149的前端安裝在該部分。 藉此，可藉由各致動器148的驅動棒149使高頻天線 140上下驅動，藉此來調整高頻天線140與板狀介電質 # 104的距離dl，進而天線元件142與電漿P的距離d2。 具體而言，使致動器148驅動，而將高頻天線140由 第9A圖所示位置提高至第9B圖所示位置，藉此使天線 元件142與電漿P的距離d2變長。藉此，可減弱在處理 室內102所生成的電漿P與天線元件142上的電壓成分之 間的電容耦合度，因此可使電漿P的電位減少。 相反地，若降低高頻天線14〇’可縮短天線元件142 與電漿P的距離d2。藉此’可加強在處理室內102所生 成的電漿P與天線元件142上的電壓成分之間的電容耦合 -23- 201034528 度，因此可使電漿P的電位增加。其中，以高頻天線140 的高度調整機構而言，並非侷限於上述者。例如致動器 148亦可爲1個。此外，致動器148並不一定要設置，亦 可藉由支持構件146而以手動使高頻天線140本身上下驅 動。 如上所示，藉由本實施形態，藉由調整高頻天線140 的高度，可改變天線元件142與電漿P的距離d2，因此 可調整電漿電位。而且，以僅調整高頻天線140高度的簡 單操作，即可輕易調整電漿電位。因此，例如在必須有高 電位電漿的電漿處理時，若降低高頻天線140的高度，而 縮短天線元件142與電漿P的距離d2即可。 此外，本實施形態中的天線元件142爲呈平面的螺旋 線圈狀，因此在同一平面上，隨著由內側端部l42a朝向 外側端部14 2b，其直徑逐漸變大。因此，若將天線元件 142的中點設爲接地點，由內側端部142 a至接地點的線 路與由接地點至外側端部142b的線路，電抗有所不同， 因此上述第4圖所示之電壓V的波形，距天線元件142 的中點爲其內側的線路與其外側的線路嚴謹而言並未形成 爲對稱，雖有些微，但兩者的波形並不相同。因此’雖有 些微，但在天線元件142會殘留電壓成分。 在如上所示的情形下，藉由本實施形態，以天線元件 142與電漿P的距離變長的方式來調整高頻天線140的高 度，藉此可將電漿電位減小至在實用上可忽略的程度。因 此，可以不會受到殘留在天線元件142的些微電壓成分的 -24- 201034528 影響的方式來生成電漿。 上述高頻天線140與屏蔽構件160的高度調整係分別 藉由控制部200來控制致動器148、168來進行。此時， 高頻天線140與屏蔽構件160的高度調整可藉由操作部 210之操作人員的操作來進行，亦可藉由控制部200的自 動控制來進行。 具體而言，在自動進行屏蔽構件160的高度調整時， φ 亦可例如第1 1圖所示，在高頻電源1 50的輸出側設置高 頻功率計（例如反射波功率計）1 5 2，按照藉由高頻功率 計1 52所檢測的高頻電力（例如以反射波電力爲最小的方 式），控制致動器168而調整屏蔽構件160的高度，而自 動調整天線元件142的共振頻率。藉此，配合來自高頻電 源150之所希望的輸出頻率，以使天線元件142的共振頻 率成爲最適共振條件的方式自動調整。 以上一面參照所附圖示，一面針對本發明之較佳實施 φ 形態加以説明，但本發明並不限定於該例。若爲該領域熟 習該項技術者，在申請專利範圍所記載的範疇內，得以思 及各種變更例或修正例，關於該等當然亦屬於本發明之技 術範圍內。 [產業上利用可能性] 本發明係可應用在使處理氣體的電漿激發而對被處理 基板施行預定處理的電漿處理裝置。 -25- 201034528 【圖式簡單說明】 第1圖係顯示本發明之實施形態之電漿處理裝置之槪 略構成的縱剖面圖。 第2圖係顯示第1圖所示之高頻天線之構成例的俯視 圖。 第3圖係以模式表示使以中點爲接地點之天線元件共 振時瞬間施加的電流與電壓的圖。 第4圖係表示對第3圖所示之天線元件實際施加的電 流與電壓的圖。 第5圖係用以說明本實施形態之天線元件之作用的斜 視圖。 第6圖係以模式表示使以端部爲接地點之天線元件共 振時瞬間施加的電流與電壓的圖。 第7圖係用以說明屏蔽構件、高頻天線之高度調整機 構的局部剖面圖。 第8A圖係屏蔽構件之高度調整機構的作用說明圖。 第8B圖係屏蔽構件之高度調整機構的作用說明圖。 第9A圖係高頻天線之高度調整機構的作用說明圖。 第9B圖係高頻天線之高度調整機構的作用說明圖。 第10圖係顯示天線元件之其他構成例的俯視圖。 第U圖係顯示本實施形態之電漿處理裝置之變形例 的局部剖面圖。 【主要元件符號說明】 -26- 201034528 100 ： 1 02 ： 104 ： 110： 120 ： 121 ： 122 ： Φ 123 ： 124 ： 126 ： 130 ： 132 ： 134 ： 136 ： 140 ： φ 142 ： 142a 142b 144 ： 146 ： 148 ： 149 ： 150 ： 電漿處理裝置 處理室 板狀介電質 載置台 氣體供給部 氣體導入口 氣體供給源 氣體供給配管 質量流量控制器 開閉閥 排氣部 排氣管 晶圓搬出入口 閘閥 高頻天線 天線元件 =內側端部 =外側端部 夾持體 支持構件 致動器 驅動棒 高頻電源 152 : RF功率計 201034528 1 6 0 :屏蔽構件 162 :下部屏蔽構件 164 :上部屏蔽構件 1 6 6 :突出部 1 68 :致動器 1 69 :驅動棒 2 0 0 :控制部 2 1 0 :操作部 220 :記憶部 C :雜散電容 D:屏蔽構件160與高頻天線140的距離（上部屏蔽 構件164的上面與天線元件142的距離） dl:高頻天線140與板狀介電質104的距離 d2 :天線元件142與電漿P的距離 W :晶圓 -28-Hfr / 丄 beam potential. At this time, a shield height adjustment mechanism for adjusting a distance between the antenna element and the shield member by adjusting a height of the shield member may be provided; and the antenna element may be adjusted by adjusting a height of the high frequency antenna. An antenna height adjustment mechanism for the distance from the aforementioned plate-shaped dielectric. Thereby, the resonance frequency of the antenna element can be adjusted by a simple operation of adjusting the height of the shield member by the shield height adjusting mechanism. In addition, the plasma potential can be adjusted by a simple operation of adjusting the height of the high frequency antenna by the antenna height adjustment mechanism. Further, a high-frequency power meter "controls the actuator" according to the high-frequency power detected by the high-frequency power meter and adjusts the height of the shield member on the output side of the high-frequency power source to make the antenna element The resonant frequency becomes the optimum way for the automatic adjustment. Thereby, the resonance frequency of the antenna element can be more easily adjusted to be optimum. Further, the antenna element is preferably in the form of a spiral coil. In the case of a planar coil-shaped antenna element, unlike the spiral coil wound in the longitudinal direction, the diameter gradually increases as the inner end portion faces the outer end portion on the same plane. Therefore, if the midpoint of the antenna element or its vicinity is used as a grounding point, the reactance differs between the line from the inner end to the ground and the line from the ground to the outer end, so the voltage waveform on the antenna element, The line from the ground point of the antenna element is not symmetric with respect to the line on the outer side of its outer-9-201034528. Although it is slightly different, the waveforms of the two are not the same. Therefore, although it is somewhat slight, the voltage component remains in the antenna element. In the case as described above, with the present invention, the height of the radio-frequency antenna is adjusted, for example, in such a manner that the distance between the antenna element and the plasma becomes long, whereby the plasma potential can be reduced. Thereby, the plasma can be generated without being affected by some of the micro voltage components remaining in the antenna element. Advantageous Effects of Invention According to the present invention, an antenna element is configured such that both ends thereof are opened, and a midpoint or a vicinity thereof is grounded to resonate at a half wavelength from a high frequency of a high-frequency power source, thereby providing an antenna element. A plasma processing apparatus for easily forming a plasma having a low plasma potential and a high density of stability. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and the drawings, constituent elements that have substantially the same functional configurations are denoted by the same reference numerals, and the description thereof will not be repeated. (Configuration Example of Plasma Processing Apparatus) First, a configuration example of the plasma processing apparatus 100 according to the embodiment of the present invention will be described with reference to the drawings. Here, a plasma of a processing gas excited in a processing chamber by applying high-frequency power to a planar high-frequency antenna is applied to a substrate to be processed such as a semiconductor wafer (hereinafter also referred to as "crystal-10-201034528". The circle ") is an example of an inductively coupled plasma processing apparatus that performs a predetermined plasma treatment. Fig. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus 100 of the present embodiment, and Fig. 2 is a view showing a high-frequency antenna 140 provided in the plasma processing apparatus 100 as viewed from above. The plasma processing apparatus 1 is provided with a chamber 102 in which a metal (for example, aluminum) is formed into a cylindrical shape (e.g., a cylindrical shape). Among them, the shape of the processing chamber 1〇2 is not limited to a cylindrical shape. It may also be, for example, a rectangular tube shape (for example, a box shape).载 A mounting table 110 for placing the wafer W is provided at the bottom of the processing chamber 102. The mounting table 110 is formed into a substantially columnar shape (for example, a columnar shape) by aluminum or the like. However, the shape of the mounting table 110 is not limited to the cylindrical shape. It may also be, for example, a prismatic shape (for example, a polygonal column shape). However, although not shown, various functions such as an electrostatic chuck, a heater, or a refrigerant flow path such as a refrigerant flow path for holding and holding the wafer W by Coulomb force are provided as needed in the mounting table 110. In the ceiling portion of the processing chamber 102, for example, a plate-shaped dielectric 104 made of quartz glass or ceramic is provided so as to face the mounting table 1 1 •. Specifically, the plate-shaped dielectric material 104 is formed, for example, in a disk shape, and is hermetically mounted so as to close the opening formed in the ceiling portion of the processing chamber 102. The processing chamber 102 is provided with a gas supply unit 120 that supplies a processing gas or the like for processing the wafer W. The gas supply unit 120 is configured as shown in Fig. 1, for example. That is, the gas introduction port 121 is formed in the side wall portion of the processing chamber 102, and the gas supply source 122 is connected to the gas introduction port 121 through the gas supply pipe 123. In the way of the gas supply pipe 123, there is a flow controller for controlling the gas flow rate, for example, the mass flow controller 1 24 and the opening and closing valve 126. With the gas supply unit 120 as shown above, the process gas system from the gas supply source 122 is controlled to a predetermined flow rate by the mass flow controller (MFC) 124, and is supplied to the process chamber 102 by the gas introduction port 121. In the first embodiment, the gas supply unit 120 is represented by a gas line of a system. However, the gas supply unit 120 is not limited to the case of supplying a processing gas of a single gas type, and may be a supply of a plurality of gas types. As a processing gas. In this case, a plurality of gas supply sources may be provided to constitute a gas line of a plurality of systems, and a mass flow controller may be provided in each gas line. Further, in the first drawing, the gas supply unit 120 is configured to be supplied with gas from the side wall portion of the processing chamber 102, but the present invention is not limited thereto. For example, it may be configured to supply gas from the ceiling portion of the processing chamber 102. At this time, for example, a gas introduction port may be formed in, for example, the center of the plate-shaped dielectric material 104, and the gas may be supplied therefrom. In the processing gas supplied to the processing chamber 102 by the gas supply unit 120 as described above, for example, a halogen-based gas containing C1 or the like is used for etching the oxide film. Specifically, when etching a ruthenium oxide film such as a Si 2 film, a chf 3 gas or the like is used as a processing gas. In addition, when etching a high dielectric film such as Hf〇2, HfSi〇2, Zr〇2, or ZrSi〇4, BC13 gas is used as a processing gas, or a mixed gas of BC13 gas and 〇2 gas is used as a processing gas. . At the bottom of the processing chamber 102, an exhaust portion 130 for exhausting an atmosphere in the processing chamber 102 is connected through an exhaust pipe 132. The exhaust unit 130 is constituted by, for example, a vacuum pump by -12-201034528, and the inside of the processing chamber 102 can be depressurized to a predetermined pressure. A wafer carry-out port 134' is formed in a side wall portion of the processing chamber 102, and a gate valve 136 is provided at the wafer carry-in/out port 134. When the wafer W is carried in, for example, the gate valve 136 is opened, and the wafer W is placed on the mounting table 11 in the processing chamber 102 by a transfer mechanism such as a transfer arm (not shown), and the gate valve 136 is closed to perform wafer processing. W processing. A planar high-frequency antenna 140 is disposed on the outer surface φ (upper side surface) of the plate-shaped dielectric 104 in the ceiling portion of the processing chamber 102, and a substantially cylindrical shape (for example, a circle) is provided so as to cover the high-frequency antenna 140. A cylindrical member shield member 160. However, the shape of the shield member 160 is not limited to a cylindrical shape. The shape of the shield member 1 60 can be formed into other shapes such as a rectangular tube shape, but it is preferable to match the shape of the processing chamber 102. Here, since the processing chamber 102 is formed in a substantially cylindrical shape, for example, the shield member 160 is formed in a substantially cylindrical shape. Further, in the case where the processing chamber 102 has a substantially rectangular tube shape, it is preferable that the shield member 160 is also formed in a substantially angular cylindrical shape.高频 The high-frequency antenna 140 is formed by sandwiching a spiral coil-shaped antenna element 142 composed of a conductor such as copper, aluminum or stainless steel by a plurality of holders 144. The holder 1 44 is formed in a rod shape as shown in Fig. 2, and the three holders 144 are radially disposed on the outer side of the vicinity of the center of the antenna element 142. A high frequency power source 150 is connected to the antenna element 142. The high frequency power source 150 is supplied with a high frequency of a predetermined frequency (e.g., 27.12 MHz) to the antenna element 142 at a predetermined power, whereby an induced magnetic field is formed in the processing chamber 102. Thereby, the gas introduced into the processing chamber 102 is excited to generate plasma -13-201034528, and predetermined plasma processing on the wafer, such as ashing treatment, etching treatment, and film formation processing, is performed. The high frequency output by the high frequency power source 150 is not limited to 27.12 MHz. It can also be, for example, 13.56 MHz, 60 MHz, or the like. However, the electrical length of the antenna element 142 must be adjusted in accordance with the high frequency output by the high frequency power source 150. The specific configuration of the antenna element 142 will be described later in detail. In addition, the shield member 160 can be height adjusted by the actuator 168. In addition, the high frequency antenna 140 can also be height adjusted by the actuator 148. The details will be described later. A control unit (all control unit) 200 is connected to the plasma processing apparatus 100, and each unit of the plasma processing apparatus 100 is controlled by the control unit 200. Further, the control unit 200 is connected to the operation unit 210, which is a keyboard for inputting an instruction or the like by the operator to manage the plasma processing apparatus 100, or a display for visually displaying the operation state of the plasma processing apparatus 100. Composition. Further, the control unit 200 is connected to the storage unit 220, which stores a program for realizing various processes executed by the plasma processing apparatus 1 or a recipe required for executing the program by the control of the use control unit 200 ( Recipe ) information and so on. In the memory unit 220, in addition to a plurality of process recipes for performing, for example, wafer process processing, a recipe useful for performing a process such as a clean process in a process chamber is stored. These recipes are used to control the plurality of parameters such as control parameters and setting parameters of each part of the plasma processing apparatus 1 to be collected. For example, the process processing recipe has parameters such as a flow rate of the processing gas -14 - 201034528, a pressure in the processing chamber, and a high frequency power. The recipes can be stored on the hard disk or half in a state in which they are stored in a readable medium such as a CD-ROM or a DVD. The memory unit control unit 200 reads the data from the operation unit 210. The desired process processing recipe is used to control the desired processing in the plasma processing apparatus 100. The operation of the φ operation unit 210 to edit the recipe. (Example of configuration of high-frequency antenna) Here, a specific configuration example of the main line 140 will be described with reference to the drawings. The high-frequency antenna 140 is formed by setting both ends of the antenna element 142 to be self-E and forming a midpoint of the length in the winding direction or a "midpoint" as a ground point, that is, an antenna element. 1 42 is based on a predetermined frequency of high-frequency power (for example, 27.12 MHz), and /2 wavelengths are used for resonance (in the half-wavelength mode, the length is set, the winding diameter, the winding pitch, and the electrical length of M2 are used. The degree of the reference frequency is also the length of the reference frequency of 27.12 MHz. The antenna element 142 can also be tubular, conductor memory, and the mobility can be determined by the predetermined position of the computer 220, etc. In addition, the high frequency days of the embodiment can be configured, for example, by the second picture ends 142a and 142b, and the vicinity thereof (hereinafter, only the standing wave source 150 of 1/2 wavelength is supplied) For example, the one-line resonance of the reference frequency is formed by, for example, a 1⁄2 line shape of a long one-wavelength of the antenna element, a plate shape, or the like, which is -15-201034528. The volume of the antenna element 1 42 is formed. The winding pitch is the same In the case where the distance between the conductors is large, it is advantageous to obtain a large withstand voltage. Therefore, the shape of the antenna element 142 is formed into a tubular shape having a larger thickness from the viewpoint of withstand voltage. It is advantageous to form a plate having a small thickness in order to obtain a large inter-conductor distance. When the winding pitch of the antenna element 142 is to be made narrower, it is formed into a plate shape from the viewpoint of withstand voltage. In this case, the power supply point for supplying the high frequency power from the high frequency power source 150 may be closer to the inner side or the outer side than the ground point, and for example, the impedance is preferably 50 Ω. The power supply point may be formed as In this case, the power supply point can be automatically changed by a motor or the like. By the antenna element 142 as shown above, if the high frequency power source 150 applies a high frequency of the reference frequency (for example, 27.12 MHz) to the high frequency antenna. When the resonance is performed in the half-wavelength mode, the voltage V applied to the antenna element 142 as shown in Fig. 3 at a certain instant is formed such that the midpoint (ground point) is zero and one of the ends becomes a positive peak.値, the other end becomes In contrast, since the current I applied to the antenna element 142 is phase-shifted by 90 degrees from the voltage waveform, a waveform having a maximum midpoint (ground point) and zero at both ends is formed. At this time, since the instantaneous capacitances increase and decrease in the opposite directions for each positive and negative period of the high frequency, the waveforms of the voltage V and the current I applied to the antenna element 142 are as shown in Fig. 4, that is, The voltage V is a standing wave of a half-wavelength mode in which the average voltage is extremely small by the positive and negative voltage components generated on the antenna element 142. With respect to the current I, the current I is A midpoint is formed on the antenna element 142 (grounding is the strongest standing wave with only positive or only negative current components. With the standing wave as shown above, the vertical magnetic field B having the maximum intensity occurs in the vicinity of the center of the antenna element as shown in Fig. 5, so that the excitation in the processing chamber 102 is centered on the vertical magnetic field B as shown in Fig. 5. The electric field E generates a donut-shaped plasma P. Moreover, the average voltage applied to the element 142 is very small, so the degree of capacitive coupling is extremely weak, and φ can generate a plasma having a low potential. However, when both the inner side 142a and the outer end portion 142b of the antenna element 142 are grounded as shown in Fig. 6, and the high-frequency power source 150 is connected between the outer end portion and the ground, the voltage shown in Fig. 3 The waveform of current I will be reversed. In other words, when the high-frequency power source 150 applies a high frequency of the reference frequency (for example, 27.12 MHz) to the antenna 140 and the wavelength mode resonates, the voltage V to the antenna element 142 is shown in FIG. 6 at a certain instant. It is formed as a midpoint (grounding point) with a large φ waveform at both ends. On the other hand, since the current I applied to the antenna element is phase-shifted by 90 degrees from the voltage waveform, the formation point (ground point) is zero, one of the ends becomes a positive peak, and the other end becomes a negative peak. Waveform. As described above, when both ends of the antenna element 142 are grounded (Fig. 6 and the half-wavelength mode in the case where the midpoint of the antenna element 142 is grounded (Fig. 3) is resonated, the ground point is used as a boundary. The inner portion of the antenna member 142 and the outer portion of the antenna element 1 42 are formed as magnetic fields in opposite directions. By the opposite magnetic field, at the processing chamber 102 point 142, the circular antenna thus is at the end portion 1 42b V The high frequency is half-applied as the most 142 is the middle-square, and two circular electric fields such as the fifth electric field shown in Fig. 5 are formed in the vicinity of the phase line element which is usually in the same plane as the inner -17-201034528. Moreover, the directions of rotation of the two circular electric fields are often reversed, so that there is a tendency to disturb each other and the generated plasma is unstable. On the other hand, in the case of FIG. 3 in which the midpoint of the antenna element 142 is used as the grounding point, as described above, the circular electric field excited in the processing chamber 102 is one and is always unidirectional, and there is no mutual mutuality. The electric field in the opposite direction of interference. Therefore, when the midpoint of the antenna element 142 is used as a grounding point, a more stable plasma can be formed than when the end of the antenna element 142 is used as a grounding point. Further, when both ends of the antenna element 142 are grounded (Fig. 6), the voltage component remains on the antenna element 142 in the resonance state, so that a large amount of capacitive coupling component occurs in the plasma. Since the voltage component on the antenna element 142 in the resonance state is extremely small as described above when the midpoint of the antenna element '142 is taken as the ground point, the capacitive coupling component is hard to occur in the plasma. Therefore, in the case of performing plasma treatment with less damage, it is advantageous to use the midpoint of the antenna element 142 as a grounding point (Fig. 3). In order to reduce the capacitive coupling component in the plasma as described above, it is sufficient to reduce the voltage component remaining in the antenna element 142. Therefore, when both ends of the antenna element 142 are grounded (Fig. 6), the capacitive coupling component in the plasma can be reduced by using the low inductance antenna element 142. However, if the low-inductance antenna element 142 is used, the excited magnetic field will be weak, and as a result, a strong inductively coupled plasma is less likely to occur. On the other hand, when the midpoint of the antenna element 142 is used as a grounding point (Fig. 3), since it is not necessary to reduce the capacitive coupling component in the plasma, it is also possible to use the antenna element 142 having high inductance. The higher the inductance of the antenna element 142 is, the higher the magnetic field can be formed, so that a stronger inductively coupled plasma can be formed. Therefore, in order to form a plasma having a higher density, it is advantageous to use the midpoint of the antenna element 142 as a grounding point (Fig. 3). As described above, in the radio-frequency antenna 140 of the present embodiment, the two ends of the antenna element 142 are used as the free end 142a' 142b, and the midpoint of the length in the 0-direction is used as a ground. The extremely simple configuration of the resonance in the 1/2 wavelength mode makes it easy to form a high-density 'plasma with low plasma potential and more stability. However, in order to resonate the antenna element 142 in the 1⁄2 • wavelength mode in the present embodiment, as described above, it is necessary to accurately match the electrical length of the antenna element 142 with the reference frequency (here, 27·12 ΜΗζ). /2 times the length. That is, the resonant frequency of the antenna element 142 must be properly matched. However, it is not easy to correctly fabricate the physical length of the antenna element 142. Further, the resonance frequency of the antenna element 142 is not only the inherent reactance of the antenna element 142, but also the stray capacitance between the antenna element 142 and the shield member 160 shown in Fig. 7, for example. Therefore, even if the physical length of the antenna element 142 can be accurately formed, there is a possibility that an error occurs in the distance between the antenna element 142 and the shield member 160 due to a mounting error or the like, and a resonance frequency according to the design cannot be obtained. In this case, when the end portion of the antenna element 142 is used as a grounding point (Fig. 6), for example, a variable capacitor can be attached to the ground point, whereby the electrical length of the antenna element 142 can be adjusted by -19 - 201034528. However, when the midpoint of the antenna element 142 is used as a grounding point (Fig. 3), even if a variable capacitor is connected between the midpoint of the antenna element 142 and the ground, not only the loss due to the capacitor is increased but the advantage is not obtained. If a variable capacitor is inserted, if the C値 is decreased, the possibility of not meeting the integration condition with the high-frequency power supply 150 becomes high, and conversely, if C値 is increased, a large current flows in the variable capacitor. However, it is highly likely that it will be damaged due to insufficient endurance. Therefore, in the present embodiment, the height of the shield member 160 can be adjusted, whereby the distance between the antenna element 142 and the shield member 160 can be adjusted to change the stray capacitance, whereby the resonance frequency of the antenna element 142 can be adjusted. Further, in the present embodiment, the height of the radio-frequency antenna 140 can be adjusted, and the plasma potential 〇 can be adjusted by adjusting the distance between the plasma and the antenna element 142, and the above description will be described in detail with reference to the drawings. The shield member 160 and the height adjustment mechanism of the high frequency antenna 140 are shown. Fig. 7 is an enlarged view showing a configuration in the vicinity of the radio-frequency antenna 140 shown in Fig. 1. Figs. 8A and 8B are views for explaining the action of adjusting the height of the shield member 160. Fig. 8A is a case where the height of the shield member 160 is lowered, and Fig. 8B is a case where the height of the shield member 160 is raised. Figs. 9A and 9B are views for explaining the action of adjusting the height of the radio-frequency antenna 140. The 9A is a case where the height of the high-frequency antenna 140 is lowered, and the 9B is a case where the height of the high-frequency antenna 140 is raised. First, a specific configuration example of the height adjusting mechanism of the shield member 160 will be described. As shown in Fig. 7, the shield member 160 is a lower shield member which is fixed in a substantially cylindrical shape (in this case, the shape of the processing chamber i 〇 2 is substantially cylindrical) fixed to the ceiling portion of the chamber -20-201034528. 162. The upper shield member 164 is provided on the outer side of the lower shield member 162 so as to be slidably. The upper shield member 164 is formed in a substantially cylindrical shape in which the upper surface is closed and the lower surface is formed with an opening. The upper shield member 164 is slidably driven up and down by an actuator 168 provided on the side wall portion of the process chamber 1〇2. Specifically, for example, the plurality of actuators 168 may be formed by a motor that can drive the drive bars 169 up and down, and the front ends of the drive bars 169 may be attached to the protruding portions 166 that protrude toward the outside of the upper shield member 164. . Thereby, the upper shield member 164 is driven up and down by the drive bars 169 of the respective actuators 168, whereby the distance between the shield member 160 and the high frequency antenna 140 can be adjusted (the distance between the upper surface of the upper shield member 164 and the antenna element 142) ) D. Specifically, the actuator 168 is driven to raise the upper shield member 164 〇 from the position shown in Fig. 8A to the position shown in Fig. 8B, whereby the distance D between the shield member 160 and the radio-frequency antenna 140 is made longer. Thereby, since the stray capacitance C becomes small, the resonance frequency can be adjusted such that the electrical length of the antenna element 142 becomes long. Conversely, if the upper shield member 164 is lowered, the distance D between the shield member 160 and the high frequency antenna 140 can be shortened. Thereby, since the stray capacitance C becomes large, the resonance frequency can be adjusted so that the electrical length of the antenna element 142 becomes short. However, the height adjusting mechanism of the shield member 160 is not limited to the above. For example, the number of actuators 1 68 may also be one. -21 - 160 201034528 As described above, with the present embodiment, by adjusting the height of the shield member, the capacitance C between the antenna element 142 and the shield member 160 can be changed, so that it is not necessary to change the physical length of the antenna element 142, and the antenna is adjusted. The resonant frequency of element 142. Further, the resonance frequency can be easily adjusted by a simple operation of adjusting only the height of the shield member 160, and the resonance is performed at a desired frequency, for example, by using a coiled copper tube having a maximum outer diameter of 320 mm and a winding pitch of 20 mm. As a result of the experiment in which the antenna element 142 resonates at a wavelength of 27.12 MHz, only the height of the mask member 160 is adjusted to about 10 mm to 100 mm, and the resonance frequency can be adjusted in the range of ±5% to ±10%. Further, since the electrical length of the antenna element 142 can be adjusted by adjusting the stray capacitance C of the antenna element 142 and the shield member 160, the degree of freedom of the size, shape, and the like of the antenna element 142 is greatly expanded. Also in the plasma processing apparatus 100 of the present embodiment, antenna elements of various sizes can be used. In addition to the angular antenna 142 shown in Fig. 10, an antenna element having an elliptical shape or the like may be used. Further, since the size, shape, and the like of the antenna element 142 are free, the antenna element 142 corresponding to the desired plasma size can be performed. For example, the size and shape of the antenna element can be freely designed in accordance with the diameter of the wafer W. In addition, by maximizing the winding pitch and the resonance frequency, the degree of freedom in plasma size can be greatly increased. Wherein, since the height of the shield member 160 can be adjusted, if the height of the shield 160 is too low, the distance between the antenna element 142 and the antenna element 142 may be too small, i.e., . For example, the inner adjustment of the screen of the spiral 1/2 can be used to prevent the abnormality by inserting a dielectric between the shielding member 160 and the antenna element 142. Discharge. Next, a specific configuration example of the height adjusting mechanism of the radio-frequency antenna 140 will be described. As shown in Fig. 7, the radio-frequency antenna 140 is vertically slidably driven by an actuator 148 provided on a side wall portion of the processing chamber 102. Specifically, the plurality of actuators 148 may be formed by, for example, a motor that can drive the drive bars 149 up and down, and the distal ends of the drive bars 149 may be attached to the support member 146 of the high-frequency antenna line 140. Further, the actuator 168 does not have to be provided, and the upper shield member 164 itself can be manually driven up and down. At this time, the support member 146 is provided so as to protrude toward the outer side of the holder 144 of the high-frequency antenna 140, and the front end of each of the support members 146 is formed by a slit-like hole formed below the shield member 160. Protruding, the front end of the drive rod 149 is mounted in this portion. Thereby, the high frequency antenna 140 can be driven up and down by the driving rod 149 of each actuator 148, thereby adjusting the distance d1 between the high frequency antenna 140 and the plate dielectric #104, and the antenna element 142 and the plasma. The distance of P is d2. Specifically, the actuator 148 is driven to raise the high frequency antenna 140 from the position shown in Fig. 9A to the position shown in Fig. 9B, whereby the distance d2 between the antenna element 142 and the plasma P is made longer. Thereby, the degree of capacitive coupling between the plasma P generated in the processing chamber 102 and the voltage component on the antenna element 142 can be weakened, so that the potential of the plasma P can be reduced. Conversely, reducing the high frequency antenna 14?' shortens the distance d2 between the antenna element 142 and the plasma P. Thereby, the capacitive coupling -23-201034528 degrees between the plasma P generated in the processing chamber 102 and the voltage component on the antenna element 142 can be enhanced, so that the potential of the plasma P can be increased. However, the height adjustment mechanism of the high frequency antenna 140 is not limited to the above. For example, the number of actuators 148 may be one. Further, the actuator 148 does not have to be provided, and the high frequency antenna 140 itself can be manually driven up and down by the support member 146. As described above, according to the present embodiment, by adjusting the height of the radio-frequency antenna 140, the distance d2 between the antenna element 142 and the plasma P can be changed, so that the plasma potential can be adjusted. Moreover, the plasma potential can be easily adjusted by a simple operation of adjusting only the height of the high frequency antenna 140. Therefore, for example, when plasma processing of high-potential plasma is necessary, the height d of the high-frequency antenna 140 can be lowered, and the distance d2 between the antenna element 142 and the plasma P can be shortened. Further, since the antenna element 142 in the present embodiment has a planar spiral coil shape, its diameter gradually increases as the inner end portion l42a faces the outer end portion 14 2b on the same plane. Therefore, if the midpoint of the antenna element 142 is set to the grounding point, the line from the inner end portion 142a to the ground point and the line from the ground point to the outer end portion 142b have different reactances, so that the fourth figure is as shown in Fig. 4 The waveform of the voltage V is not symmetrical with respect to the line on the inner side of the antenna element 142 and the line on the outer side thereof. Although it is somewhat slight, the waveforms of the two are not the same. Therefore, although there is a slight amount, a voltage component remains in the antenna element 142. In the case as described above, according to the present embodiment, the height of the radio-frequency antenna 140 is adjusted such that the distance between the antenna element 142 and the plasma P becomes long, whereby the plasma potential can be reduced to practically The degree of neglect. Therefore, the plasma can be generated without being affected by the -24-201034528 of some of the micro voltage components of the antenna element 142. The height adjustment of the radio-frequency antenna 140 and the shield member 160 is performed by the control unit 200 to control the actuators 148 and 168, respectively. At this time, the height adjustment of the high-frequency antenna 140 and the shield member 160 can be performed by the operation of the operator of the operation unit 210, or can be performed by the automatic control of the control unit 200. Specifically, when the height of the shield member 160 is automatically adjusted, φ may be a high-frequency power meter (for example, a reflected wave power meter) on the output side of the high-frequency power source 150 as shown in FIG. 1 . The height of the shield member 160 is controlled to adjust the height of the shield member 160 in accordance with the high frequency power detected by the high frequency power meter 152 (for example, in such a manner that the reflected wave power is minimized), and the resonance frequency of the antenna element 142 is automatically adjusted. . Thereby, the desired output frequency from the high-frequency power source 150 is automatically adjusted so that the resonance frequency of the antenna element 142 becomes an optimum resonance condition. Although the preferred embodiment of the present invention has been described above with reference to the accompanying drawings, the present invention is not limited to the examples. Those skilled in the art will be able to conceive various modifications and alterations within the scope of the invention as claimed. [Industrial Applicability] The present invention is applicable to a plasma processing apparatus that excites a plasma of a processing gas to perform a predetermined treatment on a substrate to be processed. -25-201034528 [Brief Description of the Drawings] Fig. 1 is a longitudinal sectional view showing a schematic configuration of a plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a plan view showing a configuration example of the radio-frequency antenna shown in Fig. 1. Fig. 3 is a view showing a pattern of current and voltage applied instantaneously when the antenna element having the midpoint as a ground point is co-vibrated. Fig. 4 is a view showing current and voltage actually applied to the antenna element shown in Fig. 3. Fig. 5 is a perspective view for explaining the action of the antenna element of the embodiment. Fig. 6 is a view showing a pattern of current and voltage applied instantaneously when the antenna element whose end portion is the ground point is co-vibrated. Fig. 7 is a partial cross-sectional view for explaining a height adjusting mechanism of a shield member and a high frequency antenna. Fig. 8A is an explanatory view of the action of the height adjusting mechanism of the shield member. Fig. 8B is an explanatory view of the operation of the height adjusting mechanism of the shield member. Fig. 9A is an explanatory view of the operation of the height adjusting mechanism of the high frequency antenna. Fig. 9B is an explanatory view of the operation of the height adjusting mechanism of the high frequency antenna. Fig. 10 is a plan view showing another configuration example of the antenna element. Fig. U is a partial cross-sectional view showing a modification of the plasma processing apparatus of the embodiment. [Description of main component symbols] -26- 201034528 100 : 1 02 : 104 : 110 : 120 : 121 : 122 : Φ 123 : 124 : 126 : 130 : 132 : 134 : 136 : 140 : φ 142 : 142a 142b 144 : 146 : 148 : 149 : 150 : Plasma processing equipment processing chamber plate dielectric mounting table gas supply unit gas introduction port gas supply source gas supply piping mass flow controller opening and closing valve exhaust unit exhaust pipe wafer loading and unloading inlet gate valve height Frequency antenna antenna element = inner end portion = outer end portion holder support member actuator drive rod high frequency power supply 152 : RF power meter 201034528 1 6 0 : shield member 162 : lower shield member 164 : upper shield member 1 6 6 : protrusion 1 68 : actuator 1 69 : drive rod 2 0 0 : control unit 2 1 0 : operation unit 220 : memory unit C : stray capacitance D: distance between shield member 160 and high-frequency antenna 140 (upper shield The distance between the upper surface of the member 164 and the antenna element 142) dl: the distance d2 between the high frequency antenna 140 and the plate dielectric 104: the distance W between the antenna element 142 and the plasma P: Wafer-28-