30215twf.doc/n 201034097 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體的檢測方法’且特別是有 關於一種晶圓的檢測方法。 【先前技術】 隨著半導體技術的蓬勃發展，半導體元件趨向高集度 • 的電路元件設計，而在整個半導體製程中最具舉足輕重的 步驟之一即為微影製程(photolithography)。半導體元件結 構之各膜層的圖案都是由微影製程來產生。因此，將光罩 上之圖案轉移至晶圓(wafer)上的精確性，便佔有非常重要 的地位。若是光罩上之圖案不正確，則會造成晶圓上之圖 案不正確，因而影響晶圓的特性。 一般來說’在將光罩上的圖案轉移至晶圓上後，會對 t圓進行檢測步驟，以較晶圓上的圖案為正確。影像相 • ’皿哪SUbtractlon)為目前常用的檢測方法之-。舉例來 =曰圓具：多個曝光區’每—個曝光區包括排列成2「行」 ^ ^ ^ , 的方向知描母—個曝光區，以獲得位於 個‘】步Γ多個_ 影像與其後-時也就是f-時間點所得的 組連續的影像相減資料:在:檢如::得多 貧枓顯不兩影像之間具有差異處，則表示相職 201034097 -，—30215twf.doc/n 晶片上具有缺陷。30215 twf.doc/n 201034097 VI. Description of the Invention: [Technical Field] The present invention relates to a method for detecting a semiconductor, and particularly to a method for detecting a wafer. [Prior Art] With the rapid development of semiconductor technology, semiconductor components tend to be highly integrated circuit component design, and one of the most important steps in the entire semiconductor process is photolithography. The pattern of each film layer of the semiconductor device structure is produced by a lithography process. Therefore, the accuracy of transferring the pattern on the reticle to the wafer is very important. If the pattern on the mask is not correct, the pattern on the wafer will be incorrect, thus affecting the characteristics of the wafer. In general, after transferring the pattern on the reticle to the wafer, the t-circle is tested to be correcter than the pattern on the wafer. Image phase • 'SUBtractlon' is the currently used detection method. For example: 曰 round: multiple exposure areas 'each exposure area consists of 2 "rows" ^ ^ ^, the direction of the description of the mother--exposure area to obtain a number of _ images Subsequent to the time-time is the f-time point of the group of consecutive image subtraction data: in: such as:: much more poor and there is a difference between the two images, it means the position 201034097 -, -30215twf. The doc/n has defects on the wafer.
然而，當光罩上有缺陷時，此缺陷會重複地出現在每 一個曝光區的相同位置上，假設此缺陷重複地出現在每— 曝光區的第二行的同一位置上。因此，當檢測機台沿著「列」 的方向掃描晶圓時，由於每一曝光區的第二行的相同位置 具有缺陷，故由每一曝光區之第二行所擷取到的影像相 同，使得任意兩個連續影像的影像相減資料皆相同，而無 ^辨識出晶圓上有缺失的存在。換句話說，上述之晶圓的 檢測方法無法確實地檢測出晶圓上的圖案具有缺失。 【發明内容】 本發明提供一種晶圓的檢測方法，以檢測出晶圓上的 缺陷。 曰。本發明提出一種晶圓的檢測方法。首先，提供晶圓， ^圓包括多個曝光區，各曝光區包括在第__方向上排列為 仃、在第二方向上排列為N行之2χΝ個晶片，其中 =2的正整數，第—方向與第二方向垂直。接著，沿著 卸描方向掃描晶圓，其中掃描方向不同於第一方向。 向。在本發明之一實施例中，上述之掃描方向等於第二方 曰ηΐΪ明提出又一種晶圓的檢測方法。首先，提供晶圓， 欠多個曝光區曝光區是沿著第—方向進行曝光所 = 曝光區包括在第一方向上排列為2行、在二 °上排列為Ν行之2χΝ個晶片，其中Ν為大於2的正整 4 302l5twf.d〇c/n 201034097 ί各。接著’定向晶圓’使晶圓 上排列為N行，三上排列為2行、在第四方向 不同於第-方/、第—方向不同於第—方向，第四方向 者純方向知描晶圓，其中掃描方向不等 j。 本發明提出再—種晶圓的檢 、、° 晶圓台括名筮, 成百无供晶圓’ ❹ 2的正整向=方ST多個晶…大於 個連續的時間點下“個影像，二描=，以得到在多 後—時間^象且將一時間點的影像與其 結果，®較步驟，以得到⑷)個比較 戈二/ —Ο個比較結果皆相同。然後改變掃描方向， ，、中改變後的掃描方向不等於第—方向。 的产Ϊ ^ ^述’本發日狀晶®的檢财法是_掃描晶圓 於曝光區之晶片排列為2行的方向，來檢 曰曰0疋否有缺陷。且，本發明之晶圓的檢測方法可以 ，出晶圓上重複出現的缺陷’諸如因光罩上的缺陷而造 成晶圓之每一個曝光區皆有的缺陷。 為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉實施例，並配合所附圖式作詳細說明如下。 【實施方式】 本發明之晶圓的檢測方法適於檢測曝光成每一曝光 區包括2xN個晶片的晶圓。本發明之晶圓的檢測方法是使 檢剩晶圓的掃描方向與曝光區之晶片排列為2行的方向不 5 201034097 * …一…30215twf.doc/n 同。在第一實施例中將說明本發明之晶圓的檢測方法的概 念，在第二實施例中將說明本發明之晶圓的檢測方法如何 與現有的檢測機台結合’而在第三實施例中將進一步說明 利用本發明之晶圓的檢測方法來檢測出晶圓上重複出現的 缺陷。特別注意的是，在此說明書中’句子，，在某一「方向」 排列成「行」’’表示所形成的「行」與所指的「方向」彼此 垂直。 圖1是依照本發明之第一實施例的一種晶圓的檢測方 法的示意圖。 請參照圖1 ’首先，提供晶圓10，晶圓10包括多個 曝光區100，每一曝光區100包括在方向A1上排列為2However, when there is a defect on the photomask, the defect is repeatedly present at the same position in each of the exposure regions, assuming that the defect repeatedly appears at the same position in the second row of each exposure region. Therefore, when the inspection machine scans the wafer in the direction of "column", since the same position of the second line of each exposure area has a defect, the image captured by the second line of each exposure area is the same. Therefore, the image subtraction data of any two consecutive images is the same, and there is no recognition that there is a missing presence on the wafer. In other words, the above-described wafer inspection method cannot reliably detect that the pattern on the wafer has a defect. SUMMARY OF THE INVENTION The present invention provides a method of detecting a wafer to detect defects on a wafer. Hey. The invention provides a method for detecting a wafer. First, a wafer is provided. The circle includes a plurality of exposure regions, and each of the exposure regions includes two wafers arranged in a __ direction and arranged in a second direction as N rows, wherein a positive integer of 2, - The direction is perpendicular to the second direction. Next, the wafer is scanned along the unloading direction, wherein the scanning direction is different from the first direction. to. In an embodiment of the invention, the scanning direction is equal to the second method, and another method for detecting the wafer is proposed. First, a wafer is provided, and the exposed regions of the plurality of exposed regions are exposed along the first direction. The exposed regions include two wafers arranged in two rows in the first direction and two rows in two. Ν is more than 2 positive 4 302l5twf.d〇c/n 201034097 ί each. Then, the 'directional wafer' is arranged on the wafer in N rows, three rows are arranged in two rows, in the fourth direction, different from the first side, and the first direction is different from the first direction, and the fourth direction is purely in the direction. Wafer, where the scanning direction is not equal. The invention proposes a further wafer inspection, a wafer wafer name, a hundred wafers without a wafer ' 正 2 positive alignment = square ST multiple crystals ... more than one continuous time point "images , second drawing =, to get more than the time - time ^ image and the image of a point in time and its result, ® step, to get (4)) comparison Ge / / Ο a comparison result is the same. Then change the scanning direction, The scanning direction after the change in , is not equal to the first direction. The production method of the present invention is that the wafer is in the direction of 2 rows of the wafer in the exposure area.曰曰 疋 疋 疋 疋 疋 。 。 。 。 。 。 。 。 。 。 。 。 。 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆In order to make the above features and advantages of the present invention more comprehensible, the following specific embodiments will be described in detail below with reference to the accompanying drawings. [Embodiment] The method for detecting a wafer of the present invention is suitable for detecting exposure to each An exposed area includes a wafer of 2 x N wafers. The wafer of the present invention The method of measuring is to align the scanning direction of the remaining wafer with the wafer of the exposed area in a direction of 2 rows, and the same as in the case of the first embodiment, the wafer of the present invention will be described. The concept of the detection method, in the second embodiment, how the detection method of the wafer of the present invention is combined with the existing inspection machine will be described, and in the third embodiment, the detection method using the wafer of the present invention will be further explained. Defects that are repeated on the wafer are detected. It is important to note that in this specification, 'sentences are arranged in a "direction" to "row" to indicate the "row" formed and the "direction" Vertical to each other. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of a method of detecting a wafer in accordance with a first embodiment of the present invention. Referring to FIG. 1 ' First, a wafer 10 is provided. The wafer 10 includes a plurality of exposure regions 100, and each exposure region 100 includes 2 in the direction A1.
行、在方向A2上排列為N行之2χΝ個晶片11〇 ,其中N 為^於2的正整數’方向A1與方向A2垂直。在本實施例 中是以N=3為例，也就是每一曝光區1〇〇包括在方向 上排列為2行、在方向A2上排列為3行之6個晶片ιι〇。 接著，沿著掃描方向SD掃描晶圓，其中掃描方向sd 不同於方向A1。在本實施财，是崎财向SD等於方 向A2為例，但掃描方向SD也可以是方向ai與方向μ 以外的其他方向。也就是說’掃描晶圓1〇的掃描方向犯 只要是不同於曝光區議之晶片UG排列為2㈣方向Μ 即可。 ，而…般來說’目前韓曝光晶圓之曝光機台的曝 先方向也就是曝光區之晶片排列為2行的方向，而用來掃 描晶圓之檢測機台的掃描方向通常與曝光方向相同，^ 6 3〇215twf.doc/n 201034097 之，晶圓的曝光方向與掃描方向皆為晶片排列為2行的方 向，因此，在第二實施例中將介紹使本發明之晶圓的檢測 方法應用於現有的曝光機台以及檢測機台的流程。 圖2A至圖2C是依照本發明之第二實施例的一種晶圓 的檢測方法的流程示意圖。 請參照圖2A，首先，提供晶圓1〇，晶圓1〇包括多個 曝光區100,曝光區100是沿著第一方向1)1 (即曝光方向 ED)進行曝光所形成，每一曝光區100包括在第一方向D1 上排列為2行、在第二方向D2上排列為N行之2χΝ個晶 片110，其中Ν為大於2的正整數，第一方向D1與第二 方向D2垂直。在本實施例中是以N=3為例，也就是每一 曝光區100包括在第一方向D1上排列為2行、在第二方 向上排列為3行之6個晶片11〇。 請參照圖2B，接著，定向晶圓1〇，使晶圓1〇的每一 曝光區100的晶片110在第三方向D3上排列為2行、在 第四方向D4上排列為N行，其中第三方向D3不同於第 • 一方向D1，第四方向D4不同於第二方向D2，且第三方 向D3與第四方向〇4垂直。在本實施例中，是以第三方向 D3等於第二方向〇2、第四方向D4等於第一方向D1為 例，換言之，例如是將圖2A所繪示的晶圓1〇旋轉(n+1/2) π之角度（η為0或正整數）’諸如9〇度或27〇度。當然， 在其他實施例中’也可以將圖2Α所繪示的晶圓1〇胃旋'轉 (η+1/2)ττ以外的角度（η為0或正整數），使第三方向D3 與第四方向D4為第一方向D1、第二方向D2以外的其他 7 30215twf.d〇c/n 201034097 方向。 請參照圖2C，而後，沿著掃描方向SD掃描晶圓ι〇， 其中掃描方向SD不同於晶片u〇排列為2行的第三方向 D3。在本實施例中，是以掃描方向SD等於第四方向、 第四方向D4等於第一方向m為例，換言之，掃描方向 SD為第-方向D1。當然’在其他實施射，掃描方向sd 也可以是第三方向D3與第四方向D4以外的其他方向。 ❹ ❿ 在本實施例中，曝光區⑽之晶片110排列為2行的 方向由第-方向m改為第三方向D3，而晶圓ι〇的掃描 三方向D3 ’因此即使曝光方向ed與掃 但晶圓10的定向使得曝光區⑽ 曰片排列為2行的方向D3與掃描方向SD不同。換 j ’本發明之晶_檢測方法_於曝光方向 方 台以及檢測機台’而無需添購二卜 顶° ^會錢日日日_製程成本增加。 鬥ID η主本ί施例中’虽檢測機台沿著掃描方向SD掃描曰 多個連續的時間點下獲得各 的時間點獲得多·;影ςί晶片進像。在由多個連續 B± 办像俊進仃影像相減步驟，也β牧 ===有其；異—處時間 晶片上具有缺陷。 ，、顯此差異處相對應的 3〇215twf.doc/n 201034097 本發明之晶圓的檢測方法與習知之晶圓的檢測方法。 圖3A至圖3D是依照本發明之第三實施例的一種晶 圓的檢測方法的流程示意圖。在本實施例中，是以每一曝 光區包括2x3個晶片的晶圓為例，但應了解，本發明未限 制每一曝光區所包括的2χΝ晶片數目，只要N為大於2 的正整數即可。且’為了清楚地說明本發明之晶圓的檢測 方法，在第三實施例中是以將晶圓順時針旋轉9〇度來定向 φ 晶圓為例，但應了解本發明未限制定向晶圓的角度，只要 定向後的曝光區之晶片排列為2行的方向與掃描方向不同 即可。 請參照圖3Α，首先，提供晶圓1〇a，晶圓1〇a包括多 個曝光區100，曝光區1〇〇是沿著第一方向D1 (即曝光方 向ED)進行曝光所形成，每一曝光區1〇〇包括在第一方向 D1上排列為2行、在第二方向D2上排列為3行之6個晶 片110、110a等，其中第一方向^^與第二方向^^垂直。 在本實施例中，晶圓l〇a上有重複出現的缺陷12〇，此缺 • 陷12〇出現在每一個曝光區1〇〇的同一晶片ll〇a上。此缺 120例如疋由於用以曝光晶圓1〇a的光罩（未緣示)上有 缺陷，因此當光罩沿著第一方向D1曝光晶圓1〇a時，此 缺陷120會重複的出現在每一曝光區1〇〇的同一晶片n〇a 上。 凊參照圖3B’接著’例如是將圖3A所緣示的晶圓i〇a 旋轉90度，使其定向如圖3B所繪示的晶圓1〇&。也就是 說，晶圓10a的每一曝光區1〇〇的晶片11〇、u〇a等在第 9 -5〇215twf.doc/n 201034097 一方向D1上排列為3行、在第二方向D2上排列為2行。 請圖時參照圖3C與圖3D，而後，沿著掃描方向SD 掃描晶圓l〇a，其中掃描方向SD不同於每一曝光區1〇〇 的晶片110、ll〇a等排列為2行的第二方向D2。在本實施 例中’是以掃描方向SD等於第一方向D1為例，但掃描方 向SD也可以是第一方向D1以及第二方向D2以外的其他 方向。Rows, two wafers 11 排列 arranged in N rows in the direction A2, wherein N is a positive integer in the direction of 'the direction A1 is perpendicular to the direction A2. In the present embodiment, N = 3 is taken as an example, that is, each exposure area 1 includes 6 wafers arranged in 2 rows in the direction and 3 rows in the direction A2. Next, the wafer is scanned along the scanning direction SD, wherein the scanning direction sd is different from the direction A1. In the present embodiment, it is assumed that the SD is equal to the direction A2, but the scanning direction SD may be other directions than the direction ai and the direction μ. That is to say, the scanning direction of the wafer 1 is scanned as long as the wafer UG which is different from the exposure area is arranged in the 2 (four) direction Μ. And, in general, 'the exposure direction of the current exposure wafer of the Korean exposure wafer is the direction of the wafer in the exposure area is 2 rows, and the scanning direction of the inspection machine for scanning the wafer is usually the exposure direction. Similarly, ^6 3〇215twf.doc/n 201034097, both the exposure direction and the scanning direction of the wafer are in the direction in which the wafers are arranged in two rows. Therefore, in the second embodiment, the detection of the wafer of the present invention will be described. The method is applied to the existing exposure machine and the flow of the inspection machine. 2A through 2C are schematic flow charts showing a method of detecting a wafer in accordance with a second embodiment of the present invention. Referring to FIG. 2A, first, a wafer 1 is provided. The wafer 1 includes a plurality of exposure regions 100, and the exposure region 100 is formed by exposure along a first direction 1) 1 (ie, an exposure direction ED), and each exposure is performed. The region 100 includes two wafers 110 arranged in two rows in the first direction D1 and N rows in the second direction D2, wherein Ν is a positive integer greater than 2, and the first direction D1 is perpendicular to the second direction D2. In the present embodiment, N = 3 is taken as an example, that is, each exposure region 100 includes six wafers 11 arranged in two rows in the first direction D1 and three rows in the second direction. Referring to FIG. 2B, next, the wafer 1 is oriented so that the wafers 110 of each exposed region 100 of the wafer 1 are arranged in 2 rows in the third direction D3 and N rows in the fourth direction D4, wherein The third direction D3 is different from the first direction D1, the fourth direction D4 is different from the second direction D2, and the third direction D3 is perpendicular to the fourth direction 〇4. In this embodiment, the third direction D3 is equal to the second direction 〇2, and the fourth direction D4 is equal to the first direction D1. In other words, for example, the wafer 1〇 illustrated in FIG. 2A is rotated (n+ 1/2) The angle of π (η is 0 or a positive integer) 'such as 9 degrees or 27 degrees. Of course, in other embodiments, the wafer 1 shown in FIG. 2A can also be rotated to an angle other than (η+1/2)ττ (η is 0 or a positive integer), so that the third direction D3 The fourth direction D4 is the direction of 7 30215 twf.d〇c/n 201034097 other than the first direction D1 and the second direction D2. Referring to FIG. 2C, the wafer ι is scanned along the scanning direction SD, wherein the scanning direction SD is different from the third direction D3 in which the wafers are arranged in two rows. In the present embodiment, the scanning direction SD is equal to the fourth direction, and the fourth direction D4 is equal to the first direction m. In other words, the scanning direction SD is the first direction D1. Of course, in other embodiments, the scanning direction sd may be other directions than the third direction D3 and the fourth direction D4.本 ❿ In the present embodiment, the wafer 110 of the exposure region (10) is arranged in a direction in which two rows are changed from the first direction m to the third direction D3, and the wafer ι is scanned in three directions D3' so that even the exposure direction ed and the scan However, the orientation of the wafer 10 is such that the direction D3 in which the exposure regions (10) are arranged in two rows is different from the scanning direction SD. For example, the crystal _ detection method of the present invention _ is in the exposure direction and the detection machine ’ without the need to purchase the second ° ^. In the example of the bucket ID η, the detection machine scans along the scanning direction SD, and obtains a plurality of time points at a plurality of consecutive time points; In the process of subtracting images from a plurality of consecutive B± images, the image is also subtracted from the film. 3,215 twf.doc/n 201034097 The method for detecting the wafer of the present invention and the method for detecting a conventional wafer. 3A to 3D are schematic flow charts showing a method of detecting a crystal circle in accordance with a third embodiment of the present invention. In this embodiment, a wafer having 2x3 wafers per exposure area is taken as an example, but it should be understood that the present invention does not limit the number of 2 χΝ wafers included in each exposure area, as long as N is a positive integer greater than 2. can. And in order to clearly illustrate the method for detecting the wafer of the present invention, in the third embodiment, the wafer is rotated by 9 degrees clockwise to orient the φ wafer, but it should be understood that the present invention does not limit the directional wafer. The angle is as long as the orientation of the wafers in the exposed exposure area is two rows and the scanning direction is different. Referring to FIG. 3A, first, a wafer 1A is provided. The wafer 1A includes a plurality of exposure regions 100, and the exposure region 1 is formed by exposing along a first direction D1 (ie, an exposure direction ED). An exposure area 1 〇〇 includes 6 wafers 110, 110a, etc. arranged in 2 rows in the first direction D1 and 3 rows in the second direction D2, wherein the first direction ^^ is perpendicular to the second direction ^^ . In the present embodiment, the wafer 10a has a repetitive defect 12 〇 which is present on the same wafer 11a of each exposure area. The defect 120 is, for example, due to a defect in the photomask (not shown) for exposing the wafer 1A, so when the photomask exposes the wafer 1〇a along the first direction D1, the defect 120 is repeated. Appears on the same wafer n〇a in each exposure zone. Referring to FIG. 3B', then, for example, the wafer i〇a shown in FIG. 3A is rotated by 90 degrees to be oriented to the wafer 1〇& as shown in FIG. 3B. That is, the wafers 11〇, u〇a, etc. of each exposure region 1 of the wafer 10a are arranged in 3 rows in the direction D1 of the 9th - 5th 215 twf.doc/n 201034097, and in the second direction D2 Arranged in 2 rows. Referring to FIG. 3C and FIG. 3D, the wafer l〇a is scanned along the scanning direction SD, wherein the scanning direction SD is different from the wafer 110, 〇a, etc. of each exposure area 1 排列 arranged in 2 rows. The second direction is D2. In the present embodiment, the scanning direction SD is equal to the first direction D1, but the scanning direction SD may be other directions than the first direction D1 and the second direction D2.
在本實施例中，以掃描晶圓10a之區域2〇〇為例，在 沿著掃描方向SD掃描晶圓10a之區域200的同時會得到 夕個連續時間點t〇、ti、hhUk下之位於同一行之多 個=片110、110a等的影像a、B，影像B表示位於此行 之多個晶片ll〇、l1()a等包括具有缺陷12〇的晶片舰， :乂有甘影f表示為影像、A(tl)、B(t2)、A⑹、A⑹、 二 A(t〇卜A(tl)，t3)，t4)、B⑹，5)且 A(t〇) 影像ΪΪ後進，像相減步驟’也就是將-時間點所得的 點^所得到的影像彻比對時間點將f間 物像她料 B⑹、、、依此類推），以比較兩者 』，到的衫像 於每—曝光區⑽是由同—個光有差異處。由 =所得_與其後一時間點所得二：此-時間 ^，也就是兩者之間應沒有差異，所以二—挪上應該相 影像與其後—時間點所得㈣像所得的 〇0215twf.doc/n 201034097 不相對應此差異處的晶片ll〇a上具有缺陷12〇。舉例來 ，，在本實施例中，可以發現影像A(to)與影像A(tl)之間 /又有差異、景>像A(t〇與影像丑⑹之間有差異、影像邱2) 與影像Afe)之間有差異、影像A(t3)與影像A(t4)之間沒有 差異、影像Afe)與影像Β(ω之間有差異，如此一來可以判 斷出每一個曝光區1〇〇的同一晶片1〇〇a上具有缺陷12〇， 也就是晶圓10a上具有重複出現之缺陷。In the present embodiment, taking the region 2 of the wafer 10a as an example, while scanning the region 200 of the wafer 10a along the scanning direction SD, it is obtained at the same time point t〇, ti, hhUk. Multiple images of the same row = images 110, 110a, etc., images a, B, and images B indicate that a plurality of wafers ll, l1()a, etc. located in the row include a wafer ship having a defect of 12 ,, : 乂有甘影f Expressed as image, A(tl), B(t2), A(6), A(6), two A(t〇b A(tl), t3), t4), B(6), 5) and A(t〇) image ΪΪ backward, like The subtraction step 'that is, the image obtained by the point ^ obtained at the time point is completely compared with the time point, and the f-like object is like the material B (6), and so on, to compare the two, and the shirt is like each. - The exposure area (10) is different from the same light. From = income _ and the latter time point two: this - time ^, that is, there should be no difference between the two, so the second - move the image should be the same as the image of the post-time point (4) 〇 0215twf.doc / n 201034097 There is a defect 12〇 on the wafer ll〇a that does not correspond to this difference. For example, in this embodiment, it can be found that there is a difference between the image A(to) and the image A(tl), and the scene is different from the image ugly (6), and the image is Qiu 2 There is a difference between the image Afe), no difference between the image A(t3) and the image A(t4), the image Afe) and the image Β(the difference between the ω, so that each exposure zone 1 can be judged The same wafer 1〇〇a of the crucible has a defect of 12 〇, that is, the wafer 10a has repeated defects.
由上述可知，本發明之晶圓的檢測方法可以確實地檢 測出晶圓上的缺陷，以提升晶圓的良率以及晶圓的元件特 性。 *紅上所述，本發明之晶圓的檢測方法是利用掃描晶圓 的~把方向不同於曝光區之晶片排列為2行的方向，來檢 1晶圓上是否有缺陷。且，本發明之晶圓的檢測方法可以 檢測出晶圓上重複出現的缺陷，諸如因光罩上的缺陷而造 ^晶圓之每一個曝光區皆有的缺陷，故能夠提升晶圓的良 率再者’本發明之晶圓的檢測方法可以應用於現有的檢 測機台’而不需要額外添購設備’故不會增加晶圓的製造 成本。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明’任何所屬技術領域中具有通常知識者，在不脫離 ^發明之精神和範圍内’當可作些許之更動與潤飾，故本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 11 201034097j〇2lw -— 15twf.doc/n 【圖式簡單說明】 圖1是依照本發明之第一實施例的一種晶圓的 法的示意圖。 ~方 圖2A至圖2C是依照本發明之第二實施例的—種晶圓 的檢測方法的流程示意圖。 圖3A至圖3D是依照本發明之第三實施例的一種晶 圓的檢測方法的流程示意圖。 ® 【主要元件符號說明】 10、10a :晶圓 100 ·曝光區 110、110a :晶片 120 ·缺陷 200 :區域 A卜 A2、D卜 D2、D3、D4 :方向 ED :曝光方向 _ SD .掃描方向 A(t〇)、八⑴）、B(t2)、A(t3)、A(t4)、B(t5):影像As apparent from the above, the wafer detecting method of the present invention can reliably detect defects on the wafer to improve the yield of the wafer and the component characteristics of the wafer. *In the red, the wafer inspection method of the present invention detects whether there is a defect on the wafer by using a wafer to scan a wafer having a direction different from that of the exposure region in two rows. Moreover, the method for detecting a wafer of the present invention can detect recurring defects on the wafer, such as defects in each exposed area of the wafer due to defects on the mask, so that the wafer can be improved. In addition, the detection method of the wafer of the present invention can be applied to an existing inspection machine without requiring additional equipment to be added, so that the manufacturing cost of the wafer is not increased. The present invention has been disclosed in the above embodiments, but it is not intended to limit the invention to those skilled in the art, and it is possible to make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. 11 201034097j〇2lw - 15twf.doc/n [Schematic Description of the Drawings] Fig. 1 is a schematic view showing a method of a wafer according to a first embodiment of the present invention. 2A to 2C are flow charts showing a method of detecting a wafer in accordance with a second embodiment of the present invention. 3A to 3D are schematic flow charts showing a method of detecting a crystal circle in accordance with a third embodiment of the present invention. ® [Main component symbol description] 10, 10a: Wafer 100 · Exposure area 110, 110a: Wafer 120 · Defect 200: Area A A2, D Bu D2, D3, D4: Direction ED: Exposure direction _ SD. Scanning direction A(t〇), eight (1)), B(t2), A(t3), A(t4), B(t5): image