TW201033732A - Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition - Google Patents
Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition Download PDFInfo
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201033732 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種感光化射線或感放射線樹脂組成 物,也就是說,一種使用在半導體(諸如1C)的製造方法中, 或使用在液晶用電路板、熱感應頭及其類似物之製造或其 它光製造的微影蝕刻方法中之感光化射線或感放射線樹脂 組成物;及一種使用該組成物之圖案形成方法。更具體而 言,本發明係關於一種合適於藉由沉浸投射曝光裝置,使 0 用發射出波長3 00奈米或較短的遠紫外光射線之光源來曝 光的光阻組成物;一種使用在該光阻組成物中的樹脂;及 一種使用該使用於該樹脂之合成中的正光阻組成物之圖案 形成方法。 【先前技術】 與半導體元件的微型化一起,趨勢正朝向較短波長的 曝光光源及較高數値孔徑(較高NA)的投影鏡頭移動,且已 知一種在投影鏡頭與樣品間裝塡高折射率液體(於此之後 Q 有時指爲”沉浸液體”)之所謂的沉浸方法,以試圖藉由更縮 短波長來提髙解析度。該沉浸方法對全部的圖案外形有 效,再者,其可與在目前硏究下之超解析技術(諸如,相位 移方法及經修改的照明方法)結合。 因爲用於KrF準分子雷射(24 8奈米)的光阻出現,已使 用稱爲化學放大的影像形成方法作爲光阻之影像形成方 法,以便補償因光吸收所造成的靈敏度減低。例如,該藉 由正化學放大作用之影像形成方法爲一種在曝光後,於曝 光區域中的酸產生劑分解而產生酸,使用所產生的酸作爲 201033732 反應觸媒,在曝光後的烘烤(PEB:曝光後烘烤)中,將一鹼 不溶基團轉換成一鹼可溶基團,及藉由鹼性顯影來移除曝 光區域之影像形成方法。 使用此化學放大機制之ArF準分子雷射(193奈米)的 光阻目前佔絕大多數,但是當該光阻經沉浸曝光時,其包 括會造成所形成的線條圖案倒塌而在元件製造時引起缺陷 之圖案倒塌問題,或更無法滿足就被粗糙化的圖案側壁之 線條邊緣粗糙度來說的性能。201033732 VI. Description of the Invention: [Technical Field] The present invention relates to a sensitized ray or radiation sensitive resin composition, that is, a method of use in a semiconductor (such as 1C), or a liquid crystal A photosensitive ray or radiation sensitive resin composition in the manufacture of a circuit board, a thermal sensing head, and the like or other photolithographic etching method; and a pattern forming method using the composition. More specifically, the present invention relates to a photoresist composition suitable for exposure by a light source emitting a wavelength of 300 nm or shorter far ultraviolet rays by an immersion projection exposure apparatus; a resin in the photoresist composition; and a pattern forming method using the positive photoresist composition used in the synthesis of the resin. [Prior Art] Along with the miniaturization of semiconductor components, the trend is moving toward a shorter wavelength exposure source and a higher number of aperture (higher NA) projection lenses, and it is known that the projection lens and the sample are mounted high. The so-called immersion method of the refractive index liquid (hereafter Q is referred to as "immersion liquid") in an attempt to improve the resolution by shortening the wavelength. This immersion method is effective for all pattern shapes, and in addition, it can be combined with super-analytical techniques such as phase shifting methods and modified lighting methods under current research. Because of the appearance of photoresist for KrF excimer lasers (24 8 nm), an image forming method called chemical amplification has been used as an image forming method for photoresist to compensate for the decrease in sensitivity due to light absorption. For example, the image forming method by positive chemical amplification is an acid generated by decomposition of an acid generator in an exposed region after exposure, and the resulting acid is used as a 201033732 reaction catalyst for baking after exposure ( In PEB: post-exposure baking, an alkali-insoluble group is converted into an alkali-soluble group, and an image forming method of removing an exposed region by alkaline development is performed. The ArF excimer laser (193 nm) using this chemical amplification mechanism currently has the majority of photoresist, but when the photoresist is exposed by immersion, it involves causing the formed line pattern to collapse while the component is being fabricated. The pattern causing the defect is collapsed, or the performance of the line edge roughness of the roughened pattern sidewall is not satisfied.
同樣地,已指出當將該化學放大光阻應用至沉浸曝光 時,該光阻層會在曝光時接觸到沉浸液體,結果,該光阻 層會損壞或受該沉浸液體相反地影響之組分會從該光阻層 中流出。爲了解決此問題,在JP-A-2006-309245(如於本文 中所使用,名稱"JP-A"意謂著"未審查的公告日本專利申請 案")、 JP-A-2007-3 04 5 3 7 、 JP-A-2007 - 1 8248 8 及 JP-A-2007-153982中已描述出藉由加入一包含矽原子或氟 原子的樹脂來防止該流出之實例。Similarly, it has been pointed out that when the chemically amplified photoresist is applied to an immersion exposure, the photoresist layer is exposed to the immersion liquid upon exposure, and as a result, the photoresist layer may be damaged or the components adversely affected by the immersion liquid may Flowing out of the photoresist layer. In order to solve this problem, in JP-A-2006-309245 (as used herein, the name "JP-A" means "unexamined announcement of Japanese patent application"", JP-A-2007 An example of preventing the outflow by adding a resin containing a halogen atom or a fluorine atom has been described in JP-A-2007 - 1 8248 8 and JP-A-2007-153982.
此外,至於保證在乾式曝光及沉浸曝光時外形僅些微 改變且在製程可行性上優良之光阻材料, JP-A-2008-111103揭示出一種已向那裏加入特定聚合物化 合物的光阻,其中該化合物具有氟原子與內酯結構。 再者,在沉浸曝光方法中,當使用掃描型式沉浸曝光 機器進行曝光時’除非該沉浸液體隨著鏡片移動而移動, 否則曝光速度會減低及此可影響生產力。在該沉浸液體爲 水的實例中,該光阻薄膜疏水較佳’因爲會有好的水流動 性。 -4- 201033732 此外,甚至當使用上述描述的技術進行沉浸曝光時, 需要更減少稱爲BLOB缺陷的顯影缺陷或浮渣產生。 【發明內容】 本發明之目標爲提供一種感光化射線或感放射線樹脂 組成物,其能形成一改良所產生的酸之溶離、線條邊緣粗 糙度、顯影缺陷及浮渣產生,並保證在沉浸曝光時該沉浸 液體之好的流動性之光阻圖案;及一種使用該感光化射線 或感放射線樹脂組成物的圖案形成方法。 0 由於爲了達到上述描述的目標之密集硏究,本發明家’ 已達成本發明。 <1> —種感光化射線或感放射線樹脂組成物,其包含: (A) 能藉由酸作用增加在鹼性顯影劑中的溶解度之樹 脂; (B) 能在以光化射線或輻射照射後產生酸的化合物;及 (C) 樹脂,其包含一具有至少一個極性轉換基團的重覆 單元(c)且具有至少氟原子或矽原子的任一個。 Q <2> 如在上述<1>中所描述的感光化射線或感放射線樹 脂組成物,其中 該重覆單元(c)具有至少氟原子或矽原子的任一個。 <3> 如在上述<1>或<2>中所描述的感光化射線或感放射 線樹脂組成物,其中 該重覆單元(c)具有由下列式(KA-1)及(KB-1)所表示的 部分結構之至少一種,及該極性轉換基團在由式(KA-1)或 (KB-1)所表示的部分結構中由X表示: 201033732In addition, as for a photoresist material which has a slight change in shape during dry exposure and immersion exposure and which is excellent in process feasibility, JP-A-2008-111103 discloses a photoresist to which a specific polymer compound has been added, wherein This compound has a fluorine atom and a lactone structure. Further, in the immersion exposure method, when exposure is performed using a scanning type immersion exposure machine 'unless the immersion liquid moves as the lens moves, the exposure speed is lowered and this may affect productivity. In the case where the immersion liquid is water, the photoresist film is preferably hydrophobic because of good water flow. -4- 201033732 Furthermore, even when immersion exposure is performed using the technique described above, it is required to further reduce development defects or scum generation called BLOB defects. SUMMARY OF THE INVENTION An object of the present invention is to provide a sensitized ray or a radiation-sensitive resin composition capable of forming an improved acid dissolution, line edge roughness, development defects, and scum generation, and ensuring immersion exposure. A photoresist pattern having a good fluidity of the immersion liquid; and a pattern forming method using the sensitized ray or the radiation-sensitive resin composition. The present inventors have achieved the present invention because of the intensive study of the objectives described above. <1> A photosensitive ray or radiation sensitive resin composition comprising: (A) a resin capable of increasing solubility in an alkali developer by an acid action; (B) capable of actinic ray or radiation a compound which generates an acid upon irradiation; and (C) a resin comprising a repeating unit (c) having at least one polarity converting group and having at least one of a fluorine atom or a germanium atom. Q <2> The sensitized ray or radiation sensitive resin composition as described in the above <1>, wherein the repeating unit (c) has at least one of a fluorine atom or a ruthenium atom. <3> The sensitized ray or radiation sensitive resin composition as described in the above <1> or <2>, wherein the repeating unit (c) has the following formula (KA-1) and (KB) -1) at least one of the partial structures represented, and the polar conversion group is represented by X in a partial structure represented by the formula (KA-1) or (KB-1): 201033732
YVX-Ύ2 (kb-D 其中 X代表殘酸醋、酸酐、醯亞胺、羧酸硫酯、碳酸酯、 硫酸酯及磺酸酯中之任何一種;及 γ1及Y2各者可相同或不同,其代表吸電子基團。 <4> 如在上述<1;>至<3>項之任何一項中所描述的感光化 射線或感放射線樹脂組成物,其中 該重覆單元(c)包括由下列式(KAdd)至(KA-1-17)所 表示的部分結構之至少一種: ά ό R a a @ KAr1-1 ICA.1.9 KA-1-3^ KA-1-4^) ΚΑ-Ι-δ^YVX-Ύ2 (kb-D wherein X represents any one of residual acid vinegar, acid anhydride, quinone imine, carboxylic acid thioester, carbonate, sulfate, and sulfonate; and γ1 and Y2 may be the same or different, It is a photosensitive ray or a radiation-sensitive resin composition as described in any one of the above items <1> to <3>, wherein the repeating unit ( c) includes at least one of the partial structures represented by the following formulas (KAdd) to (KA-1-17): ά ό R aa @ KAr1-1 ICA.1.9 KA-1-3^ KA-1-4^) ΚΑ-Ι-δ^
<5> 如在上述<1>至<4>之任何一項中所描述的感光化射 線或感放射線樹脂組成物’其中 該重覆單元(Ο具有至少一種由任何下列式(F2)至(F4) 及式(CS-1)至(CS-3)所表示的基團: 201033732<5> The sensitized ray or radiation sensitive resin composition as described in any one of the above <1> to <4> wherein the repeating unit (Ο has at least one of the following formulas (F2) ) to (F4) and groups represented by formula (CS-1) to (CS-3): 201033732
其中among them
R57至r68各者各自獨立地代表氫原子、氟原子或院 基,其限制條件爲R57至Rei之至少一個、R62至r64之至 少一個及R65至R68之至少一個爲氟原子或氟院基,及R62 與R63可彼此結合以形成一環; I Rt2— Ri$ (CS-1)Each of R57 to r68 independently represents a hydrogen atom, a fluorine atom or a hospital group, and is limited to at least one of R57 to Rei, at least one of R62 to r64, and at least one of R65 to R68 is a fluorine atom or a fluorine-based group. And R62 and R63 can be combined with each other to form a ring; I Rt2 - Ri$ (CS-1)
Rie-S 〇^®-R« Rit[ Hie (CS-2)Rie-S 〇^®-R« Rit[ Hie (CS-2)
其中 r12至r26各者各自獨立地代表烷基或環烷基; Q 1^3至1^5各者代表單鍵或二價連結基團;及 η代表整數1至5。 <6> 如在上述<1>至<5>之任何一項中所描述的感光化射 線或感放射線樹脂組成物,其中 該樹脂(Α)包括一由下列式(3)所表示的重覆單元: 尺7Wherein each of r12 to r26 independently represents an alkyl group or a cycloalkyl group; each of Q 1^3 to 1^5 represents a single bond or a divalent linking group; and η represents an integer of 1 to 5. <6> The sensitized ray or radiation sensitive resin composition as described in any one of the above-mentioned <1> to <5>, wherein the resin (Α) includes one represented by the following formula (3) Repeating unit: Ruler 7
⑻(8)
AA
201033732 其中 A代表酯鍵(-COO-)或醯胺鍵(-CONH-); R〇代表伸烷基、伸環烷基或其組合;及當存在有複數 個R〇時’每個Rg可與每個其它Rg相同或不同; z代表醚鍵、酯鍵、羰基鍵、醯胺鍵、胺基甲酸酯鍵 或尿素鍵;及當存在有複數個2時,每個Z可與每個其它 z相同或不同;201033732 wherein A represents an ester bond (-COO-) or a guanamine bond (-CONH-); R 〇 represents an alkylene group, a cycloalkyl group or a combination thereof; and when a plurality of R 存在 are present, 'each Rg is Same or different from each other Rg; z represents an ether bond, an ester bond, a carbonyl bond, a guanamine bond, a urethane bond, or a urea bond; and when there are a plurality of 2, each Z may be Other z are the same or different;
Rs代表具有內酯結構的單價有機基團; n〇爲在由式(3)所表示的重覆單元中由-Ro-Z-所表示的 結構之重覆數目及代表整數1至5;及 R7代表氫原子、鹵素原子或烷基。 <7> 如在上述<1>至<6>之任何一項中所描述的感光化射 線或感放射線樹脂組成物,其中 該在以光化射線或輻射照射後產生自化合物(B)的酸 具有分子量300或更大,及包括單環或多環、脂環族或芳 香環,其可包含雜原子。 如在上述<1>至<7>之任何一項中所描述的感光化射 線或感放射線樹脂組成物,其中 該樹脂(C)的含量從0.1至10質量%,以該感光化射線 或感放射線樹脂組成物的全部固體含量爲準。 <9> 如在上述<1>至<8>之任何一項中所描述的感光化射 線或感放射線樹脂組成物’其中 關於從該感光化射線或感放射線樹脂組成物所形成之 感光膜,其與水的後退接觸角爲70°或更大。 <10> —種光阻薄膜,其從在上述<1>至<9>之任何—項中 201033732 所描述的感光化射線或感放射線樹脂組成物形成。 <11> 一種圖案形成方法,其包括沉浸曝光及顯影在上述 <10>中所描述的光阻薄膜之步驟。 【實施方式】 本發明詳細描述在下列。 附隨地,在本發明中,當指示出一基團(原子基團)而 沒有具體指出是否經取代或未經取代時,該基團包括不具 有取代基的基團及具有取代基的基團二者。例如,"烷基" 0 不僅包括不具有取代基的烷基(未經取代的烷基),而且亦 包括具有取代基的烷基(經取代的烷基)。 在本發明中,名稱”光化射線”或”輻射"指爲例如汞燈 的亮線光譜、爲準分子雷射的典型之遠紫外光射線、極紫 外光、X射線或電子束。同樣地,在本發明中,"光"意謂 著光化射線或輻射。Rs represents a monovalent organic group having a lactone structure; n〇 is the number of repeats of the structure represented by -Ro-Z- in the repeating unit represented by the formula (3) and represents an integer of 1 to 5; R7 represents a hydrogen atom, a halogen atom or an alkyl group. <7> The sensitized ray or radiation sensitive resin composition as described in any one of the above-mentioned <1> to <6>, wherein the composition is derived from a compound after irradiation with actinic rays or radiation (B) The acid has a molecular weight of 300 or more, and includes a monocyclic or polycyclic, alicyclic or aromatic ring which may contain a hetero atom. A photosensitive ray or radiation sensitive resin composition as described in any one of the above-mentioned items <1> to <7>, wherein the content of the resin (C) is from 0.1 to 10% by mass based on the sensitized ray Or the total solid content of the radiation sensitive resin composition. <9> The sensitized ray or radiation sensitive resin composition described in any one of the above <1> to <8>, wherein the composition is formed from the sensitized ray or the radiation sensitive resin composition The photosensitive film has a receding contact angle with water of 70 or more. <10> A photoresist film which is formed from the sensitized ray or radiation sensitive resin composition described in any of the above <1> to <9><11> A pattern forming method comprising the steps of immersing exposure and developing the photoresist film described in the above <10>. [Embodiment] The present invention is described in detail below. Incidentally, in the present invention, when a group (atomic group) is indicated without specifically indicating whether it is substituted or unsubstituted, the group includes a group having no substituent and a group having a substituent. both. For example, "alkyl" 0 includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). In the present invention, the designation "actinic ray" or "radiation" means, for example, a bright line spectrum of a mercury lamp, a typical far ultraviolet ray, an extreme ultraviolet ray, an X ray or an electron beam which is an excimer laser. In the present invention, "light" means actinic radiation or radiation.
再者,在本發明中,除非其它方面有表明,否則"曝光 ”不僅包括以汞燈、爲準分子雷射的典型之遠紫外光射線、 X射線、EUV光或其類似能量來曝光,而且亦包括以粒子 束(諸如電子束及離子束)微影蝕刻》 [1] 能藉由酸作用增加在鹼性顯影劑中的溶解度之樹脂 (A) 該樹脂(A)爲一能藉由酸作用增加在鹼性顯影劑中的 溶解度之樹脂,及其爲一在該樹脂的主鏈及側鏈之一或二 者上具有能藉由酸作用分解以產生可溶於鹼的基團之基團 (於此之後有時指爲"可酸分解的基團")的樹脂。 該可酸分解的基團具有一可溶於鹼的基團由能藉由酸 201033732 作用分解及離去的基團保護之結構較佳。 該可溶於鹼的基團之實施例包括酚羥基、羧基、氟化 的醇基團、磺酸基團、磺醯胺基團、碾基醯亞胺基團、(烷 基碾基)(烷基羰基)亞甲基、(烷基碾基)(烷基羰基)醢亞胺 基團、雙(烷基羰基)亞甲基、雙(烷基羰基)醯亞胺基團、雙 (烷基颯基)亞甲基、雙(烷基碾基)醯亞胺基團、三(烷基羰 基)亞甲基及三(烷基颯基)亞甲基。 在這些可溶於鹼的基團當中,羧基、氟化的醇基團(六Furthermore, in the present invention, unless otherwise indicated, "exposure" includes not only exposure with a mercury lamp, a typical far ultraviolet ray, an X-ray, an EUV light, or the like, which is a quasi-molecular laser. Moreover, it also includes a resin (A) which can increase the solubility in an alkaline developer by an acid action by a particle beam (such as an electron beam and an ion beam) [1]. The resin (A) can be used by a resin which increases the solubility in an alkaline developer, and which has a property capable of decomposing by an acid to produce an alkali-soluble group in one or both of the main chain and the side chain of the resin. a group (sometimes referred to as an "acid-decomposable group") resin. The acid-decomposable group has an alkali-soluble group which can be decomposed and decomposed by the action of acid 201033732. The structure of the group protected is preferred. Examples of the alkali-soluble group include a phenolic hydroxyl group, a carboxyl group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, and a ruthenium imine. Group, (alkyl alkyl) (alkylcarbonyl) methylene, (alkyl alkyl) (alkane) a carbonyl) quinone imine group, a bis(alkylcarbonyl)methylene group, a bis(alkylcarbonyl) quinone imine group, a bis(alkylfluorenyl)methylene group, a bis(alkyl ruthenium) fluorene group Amine group, tris(alkylcarbonyl)methylene group and tris(alkylindenyl)methylene group. Among these alkali-soluble groups, carboxyl group, fluorinated alcohol group (six
氟異丙醇較佳)及磺酸基團較佳。 較佳作爲該可酸分解的基團之基團爲此可溶於鹼的基 團之氫原子由能藉由酸作用離去的基團置換之基團。 該能藉由酸作用離去的基團之實施例包括 -C(R36)(R37)(R3 8)及- C(R0 ,)(1102)(01139)。 在該等式中,R36至R39各者各自獨立地代表烷基、環 烷基、芳基、芳烷基或烯基;及R3 6與R3 7可彼此結合以形 成一環。'Preferably, fluoroisopropanol and a sulfonic acid group are preferred. The group which is preferably a group which is an acid-decomposable group is a group in which a hydrogen atom of the alkali-soluble group is replaced by a group which can be removed by an acid action. Examples of the group which can be removed by acid action include -C(R36)(R37)(R3 8) and -C(R0,)(1102)(01139). In the formula, each of R36 to R39 independently represents an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkenyl group; and R3 6 and R3 7 may be bonded to each other to form a ring. '
Roi及R〇2各者各自獨立地代表氫原子、烷基、環烷基、 芳基、芳烷基或烯基。 該可酸分解的基團爲芡基酯基團、烯醇酯基團、乙縮 醛醋基團、三級烷基酯基團或其類似基團較佳,三級烷基 酯基團更佳。 該樹脂(A)包括一具有可酸分解的基團之重覆單元較 佳。該具有可酸分解的基團之重覆單元爲一由下列式(AI) 所表示的重覆單元較佳: -10- 201033732 ]RX1 (冲 cr^o--rx2 KX3Each of Roi and R〇2 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkenyl group. The acid-decomposable group is preferably a mercaptoester group, an enol ester group, an acetal acetate group, a tertiary alkyl ester group or the like, and the tertiary alkyl ester group is more good. The resin (A) preferably comprises a repeating unit having an acid-decomposable group. The repeating unit having an acid-decomposable group is preferably a repeating unit represented by the following formula (AI): -10-201033732]RX1 (punching cr^o--rx2 KX3)
在式(AI)中,Xai代表氫原子、可具有取代基的甲基或 由-CH2-R9所表示的基團。R9代表羥基或單價有機基團, 及該單價有機基團包括例如具有碳數5或較少的烷基及醯 基,及具有碳數3或較少的烷基較佳,甲基更佳。Xai爲氫 原子、甲基、三氟甲基或羥甲基較佳。 T代表單鍵或二價連結基團。 RU至Rx3各者各自獨立地代表烷基(線性或分支)或環 烷基(單環或多環)。 出自的二個成員可結合以形成一環烷基(單 環或多環)。 該T的二價連結基團之實施例包括伸烷基、-COO-Rt-基團及_〇_Rt·基團,其中Rt代表伸烷基或伸環烷基。 T爲單鍵或-COO-Rt-基團較佳。Rt爲具有碳數1至5 的伸烷基較佳,且-CH2-基團或-(CH2)3-基團更佳。 該11\1至Rx3的烷基爲具有碳數1至4的烷基較佳, 諸如甲基、乙基、正丙基、異丙基、正丁基、異丁基及三 級丁基。 該RXl至Rx3的環烷基爲下列較佳:單環的環烷基, 諸如環戊基及環己基;或多環的環烷基,諸如降萡基、四 環癸基、四環十二烷基及金剛烷基。 藉由結合出自尺\1至RX3的二個成員所形成之環烷基 201033732 爲下列較佳:單環的環烷基,諸如環戊基及環己基;或多 環的環烷基,諸如降萡基、四環癸基、四環十二烷基及金 剛烷基;具有碳數5至6之單環的環烷基更佳。In the formula (AI), Xai represents a hydrogen atom, a methyl group which may have a substituent or a group represented by -CH2-R9. R9 represents a hydroxyl group or a monovalent organic group, and the monovalent organic group includes, for example, an alkyl group having a carbon number of 5 or less and a mercapto group, and an alkyl group having a carbon number of 3 or less is preferable, and a methyl group is more preferable. Xai is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. T represents a single bond or a divalent linking group. Each of RU to Rx3 independently represents an alkyl group (linear or branched) or a cycloalkyl group (monocyclic or polycyclic). The two members from which they are derived may combine to form a cycloalkyl group (monocyclic or polycyclic). Examples of the divalent linking group of T include an alkylene group, a -COO-Rt- group, and a _〇_Rt. group, wherein Rt represents an alkylene group or a cycloalkyl group. It is preferred that T is a single bond or a -COO-Rt- group. Rt is preferably an alkylene group having a carbon number of 1 to 5, and a -CH2- group or a -(CH2)3- group is more preferable. The alkyl group of 11\1 to Rx3 is preferably an alkyl group having a carbon number of 1 to 4, such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group and a tertiary butyl group. The cycloalkyl group of RX1 to Rx3 is preferably the following: a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclic fluorenyl group, or a tetracyclic group Alkyl and adamantyl. The cycloalkyl group 201033732 formed by combining two members derived from the scales \1 to RX3 is preferably as follows: a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a lower Mercapto, tetracyclononyl, tetracyclododecyl and adamantyl; cycloalkyl having a monocyclic ring having 5 to 6 carbon atoms is more preferred.
Rxi爲甲基或乙基及Rx2與Rx3結合以形成上述描述的 環烷基之具體實例較佳。 該具有可酸分解的基團之重覆單元具有一單環或多環 之可酸分解的基團較佳。該單環可酸分解的基團包括如上A specific example in which Rxi is a methyl group or an ethyl group and Rx2 is bonded to Rx3 to form a cycloalkyl group as described above is preferred. The repeating unit having an acid-decomposable group preferably has a monocyclic or polycyclic acid-decomposable group. The monocyclic acid-decomposable group includes the above
所述Rx!至Rx3之任何一個爲單環的環烷基之實例;及出 自汉\1至Rx3的二個成員結合以形成單環的環烷基之實 例,且該單環的環烷基爲環戊基或環己基較佳。該多環可 酸分解的基團包括尺心至Rx3之任何一個爲多環的環烷基 之實例;及出自尺\1至Rx3的二個成員結合以形成多環的 環烷基之實例,且該多環的環烷基爲降萡基、四環癸基、 四環十二烷基或金剛烷基較佳。 這些基團各者可具有取代基,及該取代基的實施例包Any one of Rx! to Rx3 is an example of a monocyclic cycloalkyl group; and an example in which two members from Han\1 to Rx3 are combined to form a monocyclic cycloalkyl group, and the monocyclic cycloalkyl group It is preferably a cyclopentyl group or a cyclohexyl group. The polycyclic acid-decomposable group includes an example of a cyclopentyl group in which any one of the ruthenium to Rx3 is a polycyclic ring; and an example in which two members from the scales \1 to Rx3 are combined to form a polycyclic cycloalkyl group, Further, the polycyclic cycloalkyl group is a norbornyl group, a tetracyclononyl group, a tetracyclododecyl group or an adamantyl group. Each of these groups may have a substituent, and an embodiment of the substituent
括烷基(具有碳數1至4較佳)、鹵素原子、羥基、烷氧基(具 有碳數1至4較佳)、羧基及烷氧基羰基(具有碳數2至6 較佳)。該取代基的碳數爲8或較少較佳。 該具有可酸分解的基團之重覆單元的含量從2〇至50 莫耳%較佳,從25至45莫耳%更佳,以在該樹脂(A)中的 全部重覆單元爲準。 下列提出該具有可酸分解的基團之重覆單元的特定較 佳實施例,但是本發明不限於此。 (在式中,Rx 代表 H、CH3、CF3 或 CH2OH,及 Rxa 與 Rxb 各者代表具有碳數1至4的烷基。) -12- 201033732The alkyl group (preferably having a carbon number of 1 to 4), a halogen atom, a hydroxyl group, an alkoxy group (preferably having a carbon number of 1 to 4), a carboxyl group and an alkoxycarbonyl group (having preferably a carbon number of 2 to 6) are preferable. The substituent has a carbon number of 8 or less. The content of the repeating unit having an acid-decomposable group is preferably from 2 to 50 mol%, more preferably from 25 to 45 mol%, and is based on all the repeating units in the resin (A). . A specific preferred embodiment of the repeating unit having the acid-decomposable group is proposed below, but the invention is not limited thereto. (In the formula, Rx represents H, CH3, CF3 or CH2OH, and Rxa and Rxb each represent an alkyl group having 1 to 4 carbon atoms.) -12- 201033732
π 12 13 14 15π 12 13 14 15
-13- 201033732 在下列式中’ X叫代表Η、CH3、CF3或CH2OH。-13- 201033732 In the following formula, 'X' stands for Η, CH3, CF3 or CH2OH.
-14 - 201033732-14 - 201033732
該樹脂(A)爲一具有至少由式(i)所表示的重覆單元或 由式(2)所表示的重覆單元之任一種作爲該由式(AI)所表示 的重覆單元之樹脂更佳。The resin (A) is a resin having at least one of the repeating unit represented by the formula (i) or the repeating unit represented by the formula (2) as the repeating unit represented by the formula (AI) Better.
在式(1)及(2)中’ Ri及r3各者各自獨立地代表氫原 子、可具有取代基的甲基或由-CH2-R9所表示的基團。R9 代表羥基或單價有機基團。 R2、R4、R5及R6各者各自獨立地代表烷基或環烷基。 R代表與該碳原子一起形成脂環族結構所需要的原子 基團。 1^爲氫原子、甲基、三氟甲基或羥甲基較佳。 該在R2中的烷基可爲線性或分支及可具有取代基。 該在R2中的環烷基可爲單環或多環及可具有取代基。 -15- 201033732 R2爲烷基較佳,具有碳數1至10的烷基更佳,具有 碳數1至5的烷基又更佳,及其實施例包括甲基及乙基。 R代表與該碳原子一起形成脂環族結構所需要的原子 基團。該由R所形成之脂環族結構爲單環的脂環族結構較 佳,及其碳數從3至7較佳,5或6更佳。 R3爲氫原子或甲基較佳,甲基更佳。In the formulae (1) and (2), each of 'R and r3 independently represents a hydrogen atom, a methyl group which may have a substituent or a group represented by -CH2-R9. R9 represents a hydroxyl group or a monovalent organic group. Each of R2, R4, R5 and R6 independently represents an alkyl group or a cycloalkyl group. R represents an atomic group required to form an alicyclic structure together with the carbon atom. 1 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. The alkyl group in R2 may be linear or branched and may have a substituent. The cycloalkyl group in R2 may be monocyclic or polycyclic and may have a substituent. -15-201033732 R2 is preferably an alkyl group, more preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 5 carbon atoms, and examples thereof include a methyl group and an ethyl group. R represents an atomic group required to form an alicyclic structure together with the carbon atom. The alicyclic structure formed by R is preferably a monocyclic alicyclic structure, and its carbon number is preferably from 3 to 7, more preferably 5 or 6. R3 is preferably a hydrogen atom or a methyl group, and more preferably a methyl group.
在R4、R5及R6中的烷基可爲線性或分支及可具有取 代基。該烷基爲具有碳數1至4的烷基較佳,諸如甲基、 乙基、正丙基、異丙基、正丁基、異丁基及三級丁基。 在R4、R5及R6中的環烷基可爲單環或多環及可具有 取代基。該環烷基爲下列較佳:單環的環烷基,諸如環戊 基及環己基;或多環的環烷基,諸如降萡基、四環癸基、 四環十二烷基及金剛烷基。 該有機基團或R9的特定實施例及較佳實施例與對式 (AI)之R9所描述的那些相同。The alkyl group in R4, R5 and R6 may be linear or branched and may have a substituent. The alkyl group is preferably an alkyl group having a carbon number of 1 to 4, such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, and a tertiary butyl group. The cycloalkyl group in R4, R5 and R6 may be monocyclic or polycyclic and may have a substituent. The cycloalkyl group is preferably the following: a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclononyl group, a tetracyclododecyl group, and a diamond. alkyl. Specific examples and preferred embodiments of the organic group or R9 are the same as those described for R9 of formula (AI).
由式(1)所表示的重覆單元之實施例包括由下列式(1-1) 所表示的重覆單元。在該式中,1^及R2具有與在式(1)中 的那些相同之意義。 R1 οThe embodiment of the repetitive unit represented by the formula (1) includes a repetitive unit represented by the following formula (1-1). In the formula, 1^ and R2 have the same meanings as those in the formula (1). R1 ο
(1-1) 由式(2)所表示的重覆單元爲由下列式(2-1)所表示的 重覆單元較佳: -16- 201033732 r3 〇人(2-1) R5--R4 在式(2-1)中,R3至Rs具有與在式(2)中的那些相同之 意義。(1-1) The repeating unit represented by the formula (2) is preferably a repeating unit represented by the following formula (2-1): -16- 201033732 r3 〇人(2-1) R5--R4 In the formula (2-1), R3 to Rs have the same meanings as those in the formula (2).
Rio代表含極性基團的取代基。在存在有複數個ri〇的 0 實例中,每個Rio可與每個其它RlQ相同或不同。該含極性 基團的取代基之實施例包括極性基團其自身,諸如羥基、 氰基、胺基、烷基醯胺基團及磺醯胺基團;及具有此極性 基團之線性或分支院基或環烷基。該含極性基團的取代基 爲具有羥基的烷基較佳,具有羥基的分支烷基更佳,及該 分支烷基爲異丙基較佳。 P代表整數0至15»p爲整數0至2較佳,0或1更佳。 該樹脂(A)可包含複數個含可酸分解的基團之重覆單 ❹元。 如上所述’該樹脂(A)爲一包含由式(1)所表示的重覆 單元及由式(2)所表示的重覆單元之至少一種作爲該由式 (AI)所表示的重覆單元之樹脂較佳。在另—個具體實例 中’該樹脂(A)爲一包含至少二種由式(1)所表示的重覆單 元’或由式(1)所表示的重覆單元與由式(2)所表示的重覆單 元二者作爲該由式(AI)所表示的重覆單元之樹脂較佳。 同樣地’本發明之光阻組成物可包含複數種樹脂(A), 及包含在該複數種樹脂(A)中之含可酸分解的基團之重覆 201033732 單元可彼此不同。例如,可組合著使用包含由式(i)所表示 的重覆單元之樹脂(A)與包含由式(2)所表示的重覆單元之 樹脂(A)。 下列提出當該樹脂(A)包含複數個含可酸分解的基團 之重覆單元時與當複數種樹脂(A)包含不同含可酸分解的 基團之重覆單元時的組合之較佳實施例。在下列式中’每 個R各自獨立地代表氫原子或甲基。Rio represents a substituent containing a polar group. In a 0 instance where there are multiple ri〇, each Rio may be the same or different from every other RlQ. Examples of the polar group-containing substituent include a polar group itself such as a hydroxyl group, a cyano group, an amine group, an alkylguanamine group, and a sulfonamide group; and a linear or branched group having such a polar group Hospital or cycloalkyl. The polar group-containing substituent is preferably an alkyl group having a hydroxyl group, a branched alkyl group having a hydroxyl group is more preferable, and the branched alkyl group is preferably an isopropyl group. P represents an integer of 0 to 15»p is an integer of 0 to 2, preferably 0 or 1. The resin (A) may comprise a plurality of repeating monohydric units containing an acid-decomposable group. As described above, the resin (A) is at least one of a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2) as a repeat represented by the formula (AI). The resin of the unit is preferred. In another specific example, the resin (A) is a repeating unit comprising at least two types represented by the formula (1) or a repeating unit represented by the formula (1) and the formula (2) Both of the indicated repeating units are preferably used as the resin of the repeating unit represented by the formula (AI). Similarly, the photoresist composition of the present invention may comprise a plurality of resins (A), and the repeats containing the acid-decomposable groups contained in the plurality of resins (A) may be different from each other. For example, a resin (A) comprising a repeating unit represented by the formula (i) and a resin (A) containing a repeating unit represented by the formula (2) may be used in combination. The following is a preferred combination when the resin (A) comprises a plurality of repeating units containing an acid-decomposable group and when a plurality of resins (A) contain different repeating units containing an acid-decomposable group. Example. In the following formula, 'each R' independently represents a hydrogen atom or a methyl group.
-18- 201033732 該樹脂(A)包括一具有至少一種選自於內酯基團、羥 基、氰基及可溶於鹼的基團之基團的重覆單元較佳。 下列描述該可被包含在樹脂(A)中之含內醋基團的重 覆單元。 至於該內酯基團’可使用任何基團,只要其具有內酯 結構,但是該內酯結構爲5至7員環內酯結構較佳,及另 一個環結構以形成雙環或螺結構的形式稠和至該5至7員 環內酯結構之結構較佳。該樹脂包括具有由下列式(LC 1-1) ^ 至(LC1-17)之任何一種所表示的內醋結構之重覆單元更 佳。該內酯結構可直接鍵結至主鏈。在這些內酯結構當中, (LC1-1)、(LC1-4)、(LC1-5)、(LC1-6)、(LC1-13)、(LC1-14) 及(LC 1-17)較佳。藉由使用特定的內酯結構,改良線條邊 緣粗糙度及顯影缺陷。-18- 201033732 The resin (A) preferably comprises a repeating unit having at least one group selected from the group consisting of a lactone group, a hydroxyl group, a cyano group and a base-soluble group. The re-unit containing the internal vine group which can be contained in the resin (A) is described below. As the lactone group, any group may be used as long as it has a lactone structure, but the lactone structure is preferably a 5- to 7-membered ring lactone structure, and the other ring structure is in the form of a bicyclic or spiro structure. The structure thickened to the 5- to 7-membered ring lactone structure is preferred. The resin preferably comprises a repeating unit having an internal vinegar structure represented by any one of the following formulae (LC 1-1) to (LC1-17). The lactone structure can be directly bonded to the backbone. Among these lactone structures, (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-13), (LC1-14) and (LC 1-17) good. Line edge roughness and development defects are improved by using a specific lactone structure.
(Rbji)n2 (Rb^)n2 (Rb^n2(Rbji)n2 (Rb^)n2 (Rb^n2
(Rba)n2 -19- 201033732(Rba)n2 -19- 201033732
該內酯結構部分可或可不具有取代基(Rb2)。該取代基 (Rb2)的較佳實施例包括具有碳數1至8的烷基、具有碳數 4至7的環烷基、具有碳數1至8的烷氧基、具有碳數2 至8的烷氧基羰基、羧基、鹵素原子、羥基、氰基及可酸 分解的基團。在這些當中,具有碳數1至4.的烷基、氰基 及可酸分解的基團更佳。n2代表整數0至4。當n2爲整數 2或更大時,每個取代基(Rb2)可與每個其它取代基(Rb2)相 同或不同,同樣地,一個取代基(Rb2)可與另一個取代基(Rb2) 結合以形成一環。 該具有由式(LC1-1)至(LC1-17)之任何一種所表示的內 酯結構之重覆單元包括由下列式(All)所表示的重覆單元:The lactone moiety may or may not have a substituent (Rb2). Preferred examples of the substituent (Rb2) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, and having 2 to 8 carbon atoms. Alkoxycarbonyl group, carboxyl group, halogen atom, hydroxyl group, cyano group and acid-decomposable group. Among these, an alkyl group having a carbon number of 1 to 4, a cyano group, and an acid-decomposable group are more preferable. N2 represents an integer of 0 to 4. When n2 is an integer of 2 or more, each substituent (Rb2) may be the same as or different from each other substituent (Rb2), and likewise, one substituent (Rb2) may be bonded to another substituent (Rb2). To form a ring. The repeating unit having the lactone structure represented by any one of the formulae (LC1-1) to (LC1-17) includes a repeating unit represented by the following formula (All):
Rb〇Rb〇
在式(All)中,Rb〇代表氫原子、鹵素原子或具有碳數1 至4可具有取代基的烷基。該Rbo之烷基可具有的取代基 之較佳實施例包括羥基及鹵素原子。該Rb〇的鹵素原子包 括氟原子、氯原子、溴原子及碘原子。Rb〇爲氫原子、甲 基、羥甲基或三氟甲基較佳,氫原子或甲基更佳。In the formula (All), Rb〇 represents a hydrogen atom, a halogen atom or an alkyl group having a carbon number of 1 to 4 which may have a substituent. Preferred examples of the substituent which the alkyl group of Rbo may have include a hydroxyl group and a halogen atom. The halogen atom of the Rb〇 includes a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Rb is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, and a hydrogen atom or a methyl group is more preferable.
Ab代表單鍵、伸烷基、具有單環或多環的脂環烴結構 之二價連結基團、醚基團、酯基團、羰基或包含其組合的 二價基團,且單鍵或由- Abi-COr所表示的二價連結基團較 佳。Ab represents a single bond, an alkylene group, a divalent linking group having a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group or a divalent group containing a combination thereof, and a single bond or The divalent linking group represented by -Abi-COr is preferred.
Ab!代表線性或分支的伸烷基或單環或多環的伸環烷 -20- 201033732 基,且亞甲基、伸乙基、伸環己基、伸金剛烷基或伸降宿 基較佳。 v代表具有內酯結構的基團,特別包括具有由式 (LC1-1)至(LC1-17)之任何一種所表示的結構之基團。 該具有內酯基團的重覆單元通常具有光學異構物,但 是可使用任何光學異構物。可單獨使用一種光學異構物或 可使用複數種光學異構物之混合物。在主要使用一種光學 異構物的實例中,其光學純度(ee)爲90%或更高較佳,95% 0 或更高更佳。 該具有內酯基團的重覆單元之含量從15至60莫耳% 較佳,從20至50莫耳%更佳,從30至50莫耳%又更佳, 以在該樹脂(A)中的全部重覆單元爲準。 出自由式(All)所表示的單元,當Ab爲單鍵時,該具 有特別佳的內酯基團之重覆單元包括顯示在下列的重覆單 元。藉由選擇最理想的內酯基團,改良圖案外形及孤立/密 集偏差。 Q Rx代表氫原子、可具有取代基的烷基或鹵素原子,且 氫原子、甲基或具有取代基的烷基(也就是說’羥甲基或乙 醯基氧基甲基)較佳。 _ 21 - 201033732Ab! represents a linear or branched alkyl or monocyclic or polycyclic cycloalkane-20-201033732 group, and a methylene group, an ethyl group, a cyclohexylene group, an exo-adamantyl group or a pendant group is preferred. . v represents a group having a lactone structure, and particularly includes a group having a structure represented by any one of the formulae (LC1-1) to (LC1-17). The repeating unit having a lactone group usually has an optical isomer, but any optical isomer can be used. One optical isomer may be used alone or a mixture of a plurality of optical isomers may be used. In the case of mainly using one optical isomer, the optical purity (ee) is preferably 90% or more, more preferably 95% 0 or more. The content of the repeating unit having a lactone group is preferably from 15 to 60 mol%, more preferably from 20 to 50 mol%, even more preferably from 30 to 50 mol%, in the resin (A). All repeating units in the standard shall prevail. The unit represented by the free form (All), when Ab is a single bond, the repeating unit having a particularly preferred lactone group includes the repeating unit shown below. The pattern profile and the isolation/separation bias are improved by selecting the most desirable lactone group. Q Rx represents a hydrogen atom, an alkyl group which may have a substituent or a halogen atom, and a hydrogen atom, a methyl group or an alkyl group having a substituent (that is, a 'hydroxymethyl group or an ethyl methoxymethyl group) is preferred. _ 21 - 201033732
特別是,爲了更提高本發明的效應,該樹脂(A)包括由 下列式(3)所表示的含內酯結構之重覆單元較佳:In particular, in order to further enhance the effect of the present invention, the resin (A) preferably comprises a repeating unit having a lactone structure represented by the following formula (3):
在式(3)中,A代表酯鍵(-COO-)或醯胺鍵(-CONH-)。 代表(當複數個R〇存在時,各者各自獨立地代表) 伸烷基、伸環烷基或其組合。 Z代表(當存在有複數個Z時,各者各自獨立地代表) 醚鍵、酯鍵、羰基鍵、醯胺鍵、胺基甲酸酯鍵或尿素鍵。 Ο R8代表具有內酯結構的單價有機基團。 no爲在由式(3)所表示的重覆單元中由-Ro-Ζ-所表示的 結構之重覆數目及代表整數1至5。 h代表氫原子、鹵素原子或可具有取代基的烷基。 該的伸烷基及伸環烷基各者可具有取代基。 Z爲醚鍵或酯鍵較佳,酯鍵更佳。 該b的烷基爲具有碳數1至4的烷基較佳,甲基或乙 -22- 201033732 基更佳,甲基又更佳。在R7中的烷基可經取代,及該取代 基的實施例包括鹵素原子,諸如氟原子、氯原子及溴原子; 锍基團、羥基;烷氧基,諸如甲氧基、乙氧基、異丙氧基、 三級丁氧基及苄氧基;及醯氧基,諸如乙醯氧基及丙醯氧 基。117爲氫原子、甲基、三氟甲基或羥甲基較佳。 在Ro中的鏈伸烷基爲具有碳數1至10的鏈伸烷基較 佳,從1至5更佳,及其實施例包括亞甲基、伸乙基及伸 丙基。該伸環烷基爲具有碳數3至20的伸環烷基較佳,及 0 其實施例包括伸環己基、伸環戊基、伸降萡基及伸金剛烷 基。爲了使本發明的效應出現,鏈伸烷基更佳及亞甲基特 別佳。 由R8所表示的含內酯結構取代基無限制,只要其具有 內酯結構。其特定實施例包括由式(LC1-1)至(LC1-17)所表 示的內酯結構,及在這些當中,由(LC1-4)所表示的結構較 佳。在(LC 1-1)至(LC 1-1 7)中的n2爲整數2或較少之結構更 佳。 118爲具有未經取代的內酯結構之單價有機基團或包含 具有甲基、氰基或烷氧基羰基作爲取代基之內酯結構的單 價有機基團較佳,包含具有氰基作爲取代基的內酯結構(氰 基內酯)之單價有機基團更佳。 下列提出由下列式(3)所表示的含內酯結構重覆單元 之特定實施例,但是本發明不限於此。 在下列的特定實施例中,R代表氫原子、可具有取代 基的烷基或鹵素原子,且氫原子、甲基或具有取代基的烷 基(也就是說,羥甲基或乙醯基氧基甲基)較佳。 -23- 201033732In the formula (3), A represents an ester bond (-COO-) or a guanamine bond (-CONH-). Representative (when a plurality of R 〇 are present, each independently represents) an alkyl group, a cycloalkyl group, or a combination thereof. Z represents (when there are a plurality of Z, each of them independently represents an ether bond, an ester bond, a carbonyl bond, a guanamine bond, a urethane bond or a urea bond). Ο R8 represents a monovalent organic group having a lactone structure. No is the number of repetitions of the structure represented by -Ro-Ζ- in the repeating unit represented by the formula (3) and represents the integers 1 to 5. h represents a hydrogen atom, a halogen atom or an alkyl group which may have a substituent. The alkylene group and the extended cycloalkyl group each may have a substituent. Z is preferably an ether bond or an ester bond, and the ester bond is more preferred. The alkyl group of b is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or a methyl group of 22 to 201033732, and more preferably a methyl group. The alkyl group in R7 may be substituted, and examples of the substituent include a halogen atom such as a fluorine atom, a chlorine atom and a bromine atom; an anthracene group, a hydroxyl group; an alkoxy group such as a methoxy group, an ethoxy group, Isopropoxy, tert-butoxy and benzyloxy; and anthracenyloxy such as ethoxylated and propyloxy. 117 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. The alkylene group in Ro is preferably a chain alkyl group having 1 to 10 carbon atoms, more preferably 1 to 5, and examples thereof include a methylene group, an ethyl group and a propyl group. The cycloalkyl group is preferably a cycloalkyl group having a carbon number of 3 to 20, and 0 examples thereof include a cyclohexylene group, a cyclopentylene group, a fluorenyl group and an adamantane group. In order for the effect of the present invention to occur, the alkyl group is more preferred and the methylene group is particularly preferred. The lactone-containing structural substituent represented by R8 is not limited as long as it has a lactone structure. Specific examples thereof include the lactone structure represented by the formulae (LC1-1) to (LC1-17), and among these, the structure represented by (LC1-4) is preferable. A structure in which n2 is an integer of 2 or less in (LC 1-1) to (LC 1-1 7) is more preferable. 118 is preferably a monovalent organic group having an unsubstituted lactone structure or a monovalent organic group containing a lactone structure having a methyl group, a cyano group or an alkoxycarbonyl group as a substituent, and having a cyano group as a substituent. The monovalent organic group of the lactone structure (cyanolactone) is more preferred. The specific embodiment of the lactone-containing structural repeating unit represented by the following formula (3) is proposed below, but the present invention is not limited thereto. In the following specific examples, R represents a hydrogen atom, an alkyl group which may have a substituent or a halogen atom, and a hydrogen atom, a methyl group or an alkyl group having a substituent (that is, a hydroxymethyl group or an acetoxy group) Methyl) is preferred. -23- 201033732
該含內酯結構的重覆單元爲由下列式㈠-:^所表示的 重覆單元較佳:The repeating unit having a lactone structure is preferably a repeating unit represented by the following formula (1)-::
同的意義。 R9代表(當存在有複數個r9時,各者各自獨立地代表) 烷基、環烷基、烷氧基羰基、氰基、羥基或烷氧基;及當 存在有複數個R9時,二個成員其可結合以形成一環。 X代表伸烷基、氧原子或硫原子。 m爲取代基數目及代表整數0至5»m爲0或1較佳。 該R9之烷基爲具有碳數1至4的烷基較佳,甲基或乙 基更佳及甲基最佳。該環烷基的實施例包括環丙基、環丁 基、環戊基及環己基。該烷氧基羰基的實施例包括甲氧基 羰基、乙氧基羰基、正丁氧基羰基及三級丁氧基羰基。該 院氧基的實施例包括甲氧基、乙氧基、丙氧基及丁氧基。 這些基團可具有取代基,及該取代基的實施例包括羥基、 烷氧基(諸如甲氧基及乙氧基)、氰基及鹵素原子(諸如氟原 -24- 201033732 子)。 r9爲甲基、氰基或烷氧基羰基較佳,氰基更佳。 該X的伸烷基之實施例包括亞甲基及伸乙基。X爲氧 原子或亞甲基較佳,亞甲基更佳。 當m爲整數1或更大時,至少一個R9取代在該內酯的 羰基之α-位置或β-位置處較佳,在α·位置處更佳。 下列提出具有由式(3-1)所表示的含內酯結構基團之 重覆單元的特定實施例,但是本發明不限於此。在該式中, 0 R代表氫原子、可具有取代基的烷基或鹵素原子,且氫原 子、甲基或具有取代基的烷基(也就是說,羥甲基或乙醯基 氧基甲基)較佳。The same meaning. R9 represents (in the presence of a plurality of r9, each independently represents an alkyl group, a cycloalkyl group, an alkoxycarbonyl group, a cyano group, a hydroxyl group or an alkoxy group); and when a plurality of R9 are present, two Members can combine to form a ring. X represents an alkyl group, an oxygen atom or a sulfur atom. m is a number of substituents and represents an integer of 0 to 5»m is preferably 0 or 1. The alkyl group of R9 is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, and most preferably a methyl group. Examples of the cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, and a cyclohexyl group. Examples of the alkoxycarbonyl group include a methoxycarbonyl group, an ethoxycarbonyl group, a n-butoxycarbonyl group, and a tertiary butoxycarbonyl group. Examples of the oxy group of the present invention include a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. These groups may have a substituent, and examples of the substituent include a hydroxyl group, an alkoxy group (such as a methoxy group and an ethoxy group), a cyano group, and a halogen atom (such as a fluorogenic group -24-201033732). R9 is preferably a methyl group, a cyano group or an alkoxycarbonyl group, and a cyano group is more preferred. Examples of the alkylene group of X include a methylene group and an ethyl group. X is preferably an oxygen atom or a methylene group, and a methylene group is more preferred. When m is an integer of 1 or more, at least one R9 substitution is preferably at the α-position or the β-position of the carbonyl group of the lactone, and more preferably at the α· position. The specific embodiment of the repeating unit having the lactone-containing structural group represented by the formula (3-1) is proposed below, but the invention is not limited thereto. In the formula, 0 R represents a hydrogen atom, an alkyl group which may have a substituent or a halogen atom, and a hydrogen atom, a methyl group or an alkyl group having a substituent (that is, a hydroxymethyl group or an acetoxy group) Base) is preferred.
該具有內酯基團的重覆單元通常具有光學異構物,但 是可使用任何光學異構物。 nr -厶J · 201033732 該具有內酯基團的重覆單元之含量從15至6〇莫耳% 較佳’從20至50莫耳%更佳,從30至50莫耳%又更佳, 以在該樹脂中的全部重覆單元爲準。 亦可組合著使用二或更多種選自於式(AII)之內酯重 覆單元來提高本發明的效應。在組合著使用重覆單元的實 例中,組合著使用二或更多種選自於出自式(3-i)、nQ爲1 之內酯重覆單元的重覆單元較佳。亦較佳的是,組合著使 用在式(All)中的 Ab爲單鍵之內酯重覆單元與出自式 (3-1)、n〇爲1的內酯重覆單元。 除了由式(AI)及(All)所表示的重覆單元外,該樹脂(A) 包含一具有羥基或氰基的重覆單元較佳。由於此重覆單 元’對基材的黏附力及對顯影劑的親和力提高。該具有羥 基或氰基的重覆單元爲一具有已由羥基或氰基取代之脂環 烴結構的重覆單元較佳,且不包含可酸分解的基團較佳。 該具有羥基或氰基的重覆單元爲一具有已由羥基或氰 基取代之脂環烴結構的重覆單元較佳。在該已由羥基或氰 基取代的脂環烴結構中之脂環烴結構爲金剛烷基、雙金剛 烷基或降萡烷基團較佳。該已由羥基或氰基取代的脂環烴 結構之較佳實施例包括單羥基金剛烷基、二羥基金剛烷 基、單羥基二金剛烷基、二羥基金剛烷基及經氰基取代的 降萡基。 該已由羥基或氰基取代的脂環烴結構爲由下列式 (Vila)至(Vnd)所表示的部分結構較佳: 201033732The repeating unit having a lactone group usually has an optical isomer, but any optical isomer can be used. Nr -厶J · 201033732 The content of the repeating unit having a lactone group is from 15 to 6 mol%, preferably from 20 to 50 mol%, more preferably from 30 to 50 mol%, The total repeating unit in the resin is taken as the standard. It is also possible to use two or more lactone repeating units selected from the formula (AII) in combination to enhance the effects of the present invention. In the case of combining the use of the repeating unit, it is preferable to use two or more kinds of repeating units selected from the lactone repeating unit of the formula (3-i) and nQ of 1. It is also preferred to combine a lactone repeating unit in which Ab in the formula (All) is a single bond with a lactone repeating unit derived from the formula (3-1) and n〇. In addition to the repeating unit represented by the formulas (AI) and (All), the resin (A) preferably comprises a repeating unit having a hydroxyl group or a cyano group. The adhesion of the repeating unit ' to the substrate and the affinity for the developer are improved. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure which has been substituted with a hydroxyl group or a cyano group, and preferably contains no acid-decomposable group. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure which has been substituted with a hydroxyl group or a cyano group. The alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure which has been substituted by a hydroxyl group or a cyano group is preferably an adamantyl group, a bis-adamantyl group or a norbornyl group. Preferred examples of the alicyclic hydrocarbon structure which has been substituted by a hydroxy group or a cyano group include monohydroxyadamantyl, dihydroxyadamantyl, monohydroxydiadamantyl, dihydroxyadamantyl and cyano substituted萡基. The alicyclic hydrocarbon structure which has been substituted by a hydroxyl group or a cyano group is preferably a partial structure represented by the following formulas (Vila) to (Vnd): 201033732
在式(Vila)至(Vlie)中,R2C至R4C各者各自獨立地代 表氫原子、羥基或氰基,其限制條件爲R2c至R4c之至少 一個代表羥基或氰基。出自R2c至R4c的一或二個成員爲 羥基且剩餘爲氫原子之結構較佳。在式(Vila)中,出自R2c Ο 至R4c的二個成員爲羥基及剩餘爲氫原子更佳。 具有由式(Vila)至(Vlld)所表示的部分結構之重覆單 元包括由下列式(All a)至(AI Id)所表示的重覆單元,且由式 (Alla)所表示的重覆單元較佳。In the formulae (Vila) to (Vlie), each of R2C to R4C independently represents a hydrogen atom, a hydroxyl group or a cyano group, with the limitation that at least one of R2c to R4c represents a hydroxyl group or a cyano group. A structure in which one or two members from R2c to R4c are a hydroxyl group and the remainder is a hydrogen atom is preferred. In the formula (Vila), two members from R2c Ο to R4c are preferably a hydroxyl group and the remainder being a hydrogen atom. The repetitive unit having a partial structure represented by the formulas (Vila) to (Vlld) includes a repetitive unit represented by the following formulas (All a) to (AI Id), and is repeated by the formula (Alla) The unit is preferred.
❹ 在式(Alla)至(Alld)中,RlC代表氫原子、甲基、三氟 甲基或羥甲基。❹ In the formulae (Alla) to (Alld), RlC represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.
R2C至R4c具有與在式(VIIa)至(vIIc)中的r2C至r4C 相同之意義》 該具有羥基或氰基的重覆單元之含量從5至40莫耳% 較佳’從5至30莫耳%更佳,從1〇至25莫耳%又更佳, 以在該樹脂(A)中的全部重覆單元爲準。 下列提出該具有羥基或氰基的重覆單元之特定實施 201033732R2C to R4c have the same meaning as r2C to r4C in the formulae (VIIa) to (vIIc). The content of the repeating unit having a hydroxyl group or a cyano group is from 5 to 40 mol%, preferably from 5 to 30 mol. The ear percentage is more preferably from 1 〇 to 25 mol%, more preferably, in all the repeating units in the resin (A). The specific implementation of the repeating unit having a hydroxyl group or a cyano group is proposed below.
該樹脂(A)包括具有可溶於鹼的基團之重覆單元較 佳。該可溶於鹼的基團包括羧基、磺醯胺基團、楓基醢亞 胺基團、雙碾基醯亞胺基團及oc-位置由吸電子基團取代的 脂肪族醇(諸如六氟異丙醇基團)。該樹脂包括具有羧基的 重覆單元更佳。藉由包含該具有可溶於鹼的基團之重覆單 元,在形成接觸孔之用途上的解析度增加。至於該具有可 溶於鹼的基團之重覆單元,可溶於鹼的基團直接鍵結至樹 脂主鏈之重覆單元(諸如,藉由丙烯酸或甲基丙烯酸的重覆 單元)、可溶於鹼的基團經由連結基團鍵結至樹脂主鏈之重 覆單元、及在聚合時使用含可溶於鹼的基團之聚合起始劑 或鏈轉移劑將可溶於鹼的基團引進聚合物鏈終端中的重覆 v 單元全部較佳。該連結基團可具有單環或多環的環烴結 構。特別是,藉由丙烯酸或甲基丙烯酸的重覆單元較佳。 該具有可溶於鹼的基團之重覆單元的含量從0至20莫 耳%較佳,從3至1 5莫耳%更佳,從5至1 〇莫耳%又更佳, 以在該樹脂(A)中的全部重覆單元爲準。 下列提出該具有可溶於鹸的基團之重覆單元的特定實 施例,但是本發明不限於此。 -28- 201033732 (在該式中,Rx 爲 H、CH3、CF3 或 CH2OH。)The resin (A) preferably comprises a repeating unit having a group soluble in a base. The alkali-soluble group includes a carboxyl group, a sulfonamide group, a maple quinone imine group, a bis-indenylene imine group, and an aliphatic alcohol substituted with an electron withdrawing group at the oc-position (such as six Fluoroisopropanol group). The resin preferably comprises a repeating unit having a carboxyl group. By including the repeating unit having an alkali-soluble group, the resolution in the use of forming the contact hole is increased. As for the repeating unit having a base which is soluble in a base, the alkali-soluble group is directly bonded to the repeating unit of the resin main chain (for example, by a reciprocating unit of acrylic acid or methacrylic acid), The alkali-soluble group is bonded to the repeating unit of the resin main chain via a linking group, and the alkali-soluble group is used in the polymerization using a polymerization initiator or a chain transfer agent containing a base which is soluble in a base. It is preferred that the group introduces repeating v units in the polymer chain terminal. The linking group may have a monocyclic or polycyclic cyclic hydrocarbon structure. In particular, a repeating unit made of acrylic acid or methacrylic acid is preferred. The content of the repeating unit having an alkali-soluble group is preferably from 0 to 20 mol%, more preferably from 3 to 15 mol%, even more preferably from 5 to 1 mol%. All of the repeating units in the resin (A) are accurate. The specific embodiment of the repeating unit having a group soluble in hydrazine is proposed below, but the invention is not limited thereto. -28- 201033732 (In the formula, Rx is H, CH3, CF3 or CH2OH.)
該具有選自於內酯基團、羥基、氰基及可溶於鹼的基 團之基團的至少一個之重覆單元爲具有至少二個選自於內 酯基團、羥基、氰基及可溶於鹼的基團之成員的重覆單元 較佳’具有氰基及內酯基團的重覆單元更佳。特別是,具 Q 有氰基取代在(LC 1-4)的內酯結構上之結構的重覆單元較 佳。 該樹脂(A)進一步包括由式⑴所表示之不具有經基或 氛基的重覆單兀較佳。 拿The repeating unit having at least one selected from the group consisting of a lactone group, a hydroxyl group, a cyano group, and a base-soluble group has at least two selected from the group consisting of a lactone group, a hydroxyl group, and a cyano group. The repeating unit of the member of the alkali-soluble group is preferably more preferably a repeating unit having a cyano group and a lactone group. In particular, a repeating unit having a structure in which a cyano group has a cyano group substituted with a lactone structure of (LC 1-4) is preferred. The resin (A) further preferably comprises a repeating unit represented by the formula (1) which does not have a radical or an aromatic group. take
(4)(4)
在式(4)中,r5代表具有至少一個環狀結構且不具有羥 -29- 201033732 基或氰基之烴基團。In the formula (4), r5 represents a hydrocarbon group having at least one cyclic structure and having no hydroxy-29-201033732 group or a cyano group.
Ra代表氫原子、烷基或-CH2-0-Ra2基團,其中1132代 表烷基或醯基。Ra的實施例包括氫原子、甲基及三氟甲基。 由R5所擁有的環狀結構包括單環烴基團及多環烴基 團。該單環烴基團的實細例包括具有碳數3至12的環烷 基,諸如環戊基、環己基、環庚基及環辛基;及具有碳數 3至12的環烯基,諸如環己烯基。該單環烴基團爲具有碳 數3至7的單環烴基團較佳,環戊基或環己基更佳。 該多環烴基團包括環積聚的烴基團及交聯的環狀烴基 Q 團。該環積聚的烴基團之實施例包括雙環己基及全氫萘 基。該交聯的烴環之實施例包括雙環的烴環,諸如蒎烷環、 萡烷環、降蒎烷環、降萡烷環及雙環辛烷環(例如,雙環 [2.2.2]辛烷環、雙環[3.2.1]辛烷環)、三環烴環(諸如升布雷 烷(homobledane)環、金剛烷環、三環[5.2.1.02,6]癸烷環及 三環[4.3.1.12’5]十一烷環)、及四環烴環(諸如四環 [4.4.0.12’5.17’1()]十二烷環及全氫-1,4-甲烷基-5,8-甲烷并Ra represents a hydrogen atom, an alkyl group or a -CH2-0-Ra2 group, wherein 1132 represents an alkyl group or a fluorenyl group. Examples of Ra include a hydrogen atom, a methyl group, and a trifluoromethyl group. The cyclic structure possessed by R5 includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. Examples of the monocyclic hydrocarbon group include a cycloalkyl group having a carbon number of 3 to 12, such as a cyclopentyl group, a cyclohexyl group, a cycloheptyl group and a cyclooctyl group; and a cycloalkenyl group having a carbon number of 3 to 12, such as Cyclohexenyl. The monocyclic hydrocarbon group is preferably a monocyclic hydrocarbon group having 3 to 7 carbon atoms, more preferably a cyclopentyl group or a cyclohexyl group. The polycyclic hydrocarbon group includes a cyclic hydrocarbon group and a crosslinked cyclic hydrocarbon group Q group. Examples of hydrocarbon groups which are accumulated in the ring include dicyclohexyl and perhydronaphthyl. Examples of the crosslinked hydrocarbon ring include bicyclic hydrocarbon rings such as a decane ring, a decane ring, a norbornane ring, a norbornane ring, and a bicyclooctane ring (for example, a bicyclo[2.2.2]octane ring. Bicyclo[3.2.1]octane ring), tricyclic hydrocarbon ring (such as homobeledane ring, adamantane ring, tricyclo[5.2.1.02,6]decane ring and tricyclo[4.3.1.12' 5] undecane ring), and a tetracyclic hydrocarbon ring (such as tetracyclo[4.4.0.12'5.17'1()] dodecane ring and perhydro-1,4-methylalkyl-5,8-methane
萘環)。該交聯的環狀烴環亦包括稠和的環狀烴環,例如, 藉由稠和複數個5至8員環烷環所形成的稠環,諸如全氫 萘(萘烷)環、全氬蒽環、全氫菲環、全氫乙烷合萘環、全 氫弗環、全氫茚環及全氫葩環。 該交聯的環狀烴環之較佳實施例包括降萡基、金剛烷 基、雙環辛烷基及三環[5.2.1.02’6]癸烷基。在這些交聯的 環狀烴環當中,降萡基及金剛烷基更佳。 此脂環烴基團可具有取代基,及該取代基的較佳實施 例包括鹵素原子、烷基、由保護基團保護的羥基及由保護 -30- 201033732 基團保護的胺基。該鹵素原子爲溴原子、氯原子或氟原子 較佳,及該烷基爲甲基、乙基、丁基或三級丁基較佳。此 烷基可進一步具有取代基,及該烷基可進一步具有的取代 基包括鹵素原子、烷基、由保護基團保護的羥基及由保護 基團保護的胺基。 該保護基團的實施例包括烷基、環烷基、芳烷基、經 取代的甲基、經取代的乙基、院氧基羰基及芳烷氧基羰基。 該烷基爲具有碳數1至4的烷基較佳;該經取代的甲基爲 0 甲氧基甲基、甲氧基硫甲基、苄氧基甲基、三級丁氧基甲 基或2-甲氧基乙氧基甲基較佳;該經取代的乙基爲1-乙氧 基乙基或1-甲基-1-甲氧基乙基較佳;該醯基爲具有碳數1 至6的脂肪族醯基較佳,諸如甲醯基、乙醣基、丙醯基、 丁醯基、異丁醯基、戊醯基及特戊醯基;及該烷氧基羰基 爲具有碳數2至4的烷氧基羰基較佳。 該樹脂(A)可不包括由式(4)所表示、不具有羥基或氰 基之重覆單元的重覆單元,但是當該樹脂包含該重覆單元 〇 時,該具有由式(4)所表示、不具有羥基或氰基之重覆單元 的重覆單元之含量從10至40莫耳%較佳,從10至20莫 耳%更佳,以在該樹脂(A)中的全部重覆單元爲準。 下列提出由式(4)所表示的重覆單元之特定實施例,但 是本發明不限於此。在該式中,Ra代表H、CH3或CF3。Naphthalene ring). The crosslinked cyclic hydrocarbon ring also includes a condensed cyclic hydrocarbon ring, for example, a fused ring formed by condensing a plurality of 5 to 8 membered cycloalkane rings, such as a perhydronaphthalene (decalin) ring, Argon-helium ring, perhydrophenanthrene ring, perhydroethane naphthalene ring, perhydrofluorene ring, perhydroindene ring and perhydroindole ring. Preferred examples of the crosslinked cyclic hydrocarbon ring include a thiol group, an adamantyl group, a bicyclooctyl group, and a tricyclo[5.2.1.0''6]decyl group. Among these crosslinked cyclic hydrocarbon rings, a thiol group and an adamantyl group are more preferable. The alicyclic hydrocarbon group may have a substituent, and preferred examples of the substituent include a halogen atom, an alkyl group, a hydroxyl group protected by a protecting group, and an amine group protected by a group protecting from -30 to 201033732. The halogen atom is preferably a bromine atom, a chlorine atom or a fluorine atom, and the alkyl group is preferably a methyl group, an ethyl group, a butyl group or a tertiary butyl group. The alkyl group may further have a substituent, and the substituent which the alkyl group may further have includes a halogen atom, an alkyl group, a hydroxyl group protected by a protecting group, and an amine group protected by a protecting group. Examples of such protecting groups include alkyl groups, cycloalkyl groups, aralkyl groups, substituted methyl groups, substituted ethyl groups, anthraceneoxycarbonyl groups, and aralkoxycarbonyl groups. The alkyl group is preferably an alkyl group having 1 to 4 carbon atoms; the substituted methyl group is 0 methoxymethyl, methoxythiomethyl, benzyloxymethyl, tert-butoxymethyl Or 2-methoxyethoxymethyl is preferred; the substituted ethyl group is 1-ethoxyethyl or 1-methyl-1-methoxyethyl; the thiol group has carbon The aliphatic sulfhydryl groups of 1 to 6 are preferably, such as a methyl group, an ethionyl group, a propyl fluorenyl group, a butyl fluorenyl group, an isobutyl fluorenyl group, a pentamidine group, and a pentamidine group; and the alkoxycarbonyl group has a carbon number of 2 The alkoxycarbonyl group to 4 is preferred. The resin (A) may not include a repeating unit represented by the formula (4) and having no repeating unit of a hydroxyl group or a cyano group, but when the resin contains the repeating unit, the one having the formula (4) The content of the repeating unit indicating the repeating unit having no hydroxyl group or cyano group is preferably from 10 to 40 mol%, more preferably from 10 to 20 mol%, and all repeating in the resin (A) The unit shall prevail. The specific embodiment of the repeating unit represented by the formula (4) is proposed below, but the present invention is not limited thereto. In the formula, Ra represents H, CH3 or CF3.
201033732 爲了控制抗乾蝕刻性、對標準顯影劑的適應性、對基 材的黏附力、光阻外形及光阻通常需要的性質(諸如解析 度、耐熱性及靈敏度)之目的,除了上述描述的重覆結構單 元外,該樹脂(A)可包含多種重覆結構單元° 此重覆結構單元的實施例包括(但不限於)與描述在下 列的單體相應之重覆結構單元。 由於此重覆結構單元,可巧妙地控制該樹脂(A)所需要 的性能,特別是(1)在塗布溶劑中的溶解度、(2)薄膜形成性 質(玻璃轉換點)、(3)鹼顯影能力、(4)薄膜損失(親水性、 疏水性或可溶於鹼的基團之選擇)、(5)未曝光區域對基材之 黏附力、(6)抗乾蝕刻性、及其類似性質。 該單體的實施例包括選自於下列具有一個可加成聚合 的不飽和鍵之化合物:丙烯酸酯類、甲基丙烯酸酯類、丙 烯醯胺類、甲基丙烯醯胺類、烯丙基化合物、乙烯醚類及 乙烯基酯類。 除了這些外,可共聚合一可和與上述描述的多種重覆 結構單元相應之單體共聚合之可加成聚合的不飽和化合 物。 在該樹脂(A)中,適當地決定所包含的各別重覆結構單 元之莫耳比率,以控制光阻的抗乾蝕刻性、對標準顯影劑 的適應性、對基材的黏附力、光阻外形及光阻通常需要的 性能(諸如解析度、耐熱性及靈敏度)。 在將本發明之感光化射線或感放射線樹脂組成物使用 於ArF曝光的實例中,考慮到對ArF光之穿透度,該樹脂 (A)不具有芳香基團較佳。 201033732 特別在該樹脂中,該含芳香基團的重覆之比率爲5莫 耳%或較少較佳’ 3莫耳%或較少更佳,且理想爲〇莫耳%(也 就是說,無包含芳香基團),及該樹脂(A)具有單環或多環 的脂環烴結構較佳。 同樣地’考慮到與樹脂(C)的相容性,該樹脂(A)不包 含氟原子及矽原子較佳。 該樹脂(A)爲一全部的重覆單元皆由以(甲基)丙烯酸 酯爲基礎之重覆單元組成的樹脂較佳。於此實例中,全部 〇 的重覆單元可爲以甲基丙烯酸酯爲基礎的重覆單元、全部 的重覆單元可爲以丙烯酸酯爲基礎的重覆單元、或全部的 重覆單元可由以甲基丙烯酸酯爲基礎的重覆單元與以丙烯 酸酯爲基礎的重覆單元組成,但是該以丙烯酸酯爲基礎的 重覆單元之含量爲50莫耳%或較少較佳(以全部的重覆單 元爲準)。同樣地,較佳的共聚合聚合物包含從2〇至5〇莫 耳%由式(AI)所表示之以含酸可分解的基團之以(甲基)丙 烯酸酯爲基礎的的重覆單元、從20至50莫耳%以含內醋 Q 基團之(甲基)丙烯酸酯爲基礎的重覆單元、從5至30莫耳 %具有已由羥基或氰基取代的脂環烴結構之以(甲基)丙烯 酸酯爲基礎的重覆單元、及從0至20莫耳%之其它以(甲基) 丙烯酸酯爲基礎的重覆單元。 在以KrF準分子雷射光、電子束、X射線或波長50奈 米或較短的高能量束(例如,EUV)照射本發明之感光化射線 或感放射線樹脂組成物的實例中,除了由式(AI)所表示的 重覆單元外’該樹脂(A)進一步包括以羥基苯乙烯爲基礎的 重覆單元較佳,且以羥基苯乙烯爲基礎的重覆單元、由可 〇〇 -刀- 201033732 酸分解的基團保護之以羥基苯乙烯爲基礎的重覆單元及可 酸分解的重覆單元(諸如(甲基)丙烯酸三級烷酯)更佳。 該具有可酸分解的基團之重覆單元的較佳實施例包括 由下列組成之重覆單元:三級丁氧基羰氧基苯乙烯、1-烷 氧基乙氧基苯乙烯或(甲基)丙烯酸三級烷酯。由(甲基)丙烯 酸2-烷基-2·金剛烷酯或(甲基)丙烯酸二烷基(1-金剛烷基) 甲酯組成之重覆單元更佳。201033732 In addition to the above-described description, in order to control dry etching resistance, adaptability to standard developer, adhesion to a substrate, photoresist shape, and properties usually required for photoresist such as resolution, heat resistance, and sensitivity In addition to the repetitive structural unit, the resin (A) may comprise a plurality of repetitive structural units. Embodiments of the repetitive structural unit include, but are not limited to, repetitive structural units corresponding to the monomers described below. Due to this repetitive structural unit, the properties required for the resin (A) can be skillfully controlled, in particular, (1) solubility in a coating solvent, (2) film forming properties (glass transition point), and (3) alkali development Capacity, (4) film loss (selection of hydrophilic, hydrophobic or alkali-soluble groups), (5) adhesion of unexposed areas to the substrate, (6) dry etching resistance, and the like . Examples of the monomer include compounds selected from the group consisting of an addition polymerizable unsaturated bond: acrylates, methacrylates, acrylamides, methacrylamides, allyl compounds , vinyl ethers and vinyl esters. In addition to these, an addition-polymerizable unsaturated compound copolymerizable with a monomer corresponding to the various repeating structural units described above may be copolymerized. In the resin (A), the molar ratio of the respective repetitive structural units included is appropriately determined to control the dry etching resistance of the photoresist, the suitability to the standard developer, the adhesion to the substrate, The photoresist profile and the properties normally required for photoresist (such as resolution, heat resistance, and sensitivity). In the example in which the sensitized ray or radiation sensitive resin composition of the present invention is used for ArF exposure, the resin (A) does not have an aromatic group in view of the transmittance to ArF light. 201033732 Particularly in the resin, the ratio of the aromatic group-containing repeat is 5 mol% or less preferably '3 mol% or less, and is preferably 〇mol% (that is, It is preferred that the resin (A) has a monocyclic or polycyclic alicyclic hydrocarbon structure. Similarly, in view of compatibility with the resin (C), the resin (A) is preferably not contained in a fluorine atom or a ruthenium atom. The resin (A) is preferably a resin in which all of the repeating units are composed of a repeating unit based on (meth) acrylate. In this example, the repeating unit of all the turns may be a methacrylate-based repeating unit, the entire repeating unit may be an acrylate-based repeating unit, or all of the overlapping units may be a methacrylate-based repeating unit and an acrylate-based repeating unit, but the acrylate-based repeating unit is 50% by mole or less preferably (to all weight) The cover unit shall prevail). Likewise, preferred copolymerized polymers comprise from (2) to 5 mole % of (meth) acrylate based on the acid-decomposable group represented by formula (AI). a unit, from 20 to 50 mol% of a repeating unit based on a (meth) acrylate containing a quinone Q group, from 5 to 30 mol% having an alicyclic hydrocarbon structure which has been substituted by a hydroxy group or a cyano group A (meth) acrylate based resurfacing unit, and from 0 to 20 mol% of other (meth) acrylate based resurfacing units. In the example of irradiating the sensitized ray or radiation sensitive resin composition of the present invention with KrF excimer laser light, electron beam, X-ray or high energy beam (for example, EUV) having a wavelength of 50 nm or shorter, (A) is represented by a repeating unit represented by (AI). The resin (A) further comprises a hydroxystyrene-based repeating unit, and the hydroxystyrene-based repeating unit is made of a squeegee-knife. 201033732 The acid-decomposing group is preferably protected by a hydroxystyrene-based repeating unit and an acid-decomposable repeating unit such as a tertiary alkyl (meth)acrylate. A preferred embodiment of the repeating unit having an acid-decomposable group comprises a repeating unit consisting of: a tertiary butoxycarbonyloxystyrene, a 1-alkoxyethoxystyrene or (a) Base) Alkyl triacrylate. A repeating unit composed of 2-alkyl-2.adamantyl (meth) acrylate or dialkyl (1-adamantyl)methyl (meth) acrylate is more preferable.
該樹脂(A)可藉由普通方法(例如,自由基聚合)合成。 該一般合成方法的實施例包括批次聚合方法,其將單體物 種及起始劑溶解在溶劑中及加熱該溶液,因此達成聚合; 及滴入聚合方法,其在1至10小時內,將一包含單體物種 與起始劑之溶液逐滴加入至熱溶劑。滴入聚合方法較佳。 該反應溶劑的實施例包括四氫呋喃、1,4-二噚烷、醚類(諸 如二異丙基醚)、酮類(諸如,甲基乙基酮及甲基異丁基酮)、 酯溶劑(諸如醋酸乙酯)、醯胺溶劑(諸如,二甲基甲醯胺及 二甲基乙醯胺)、及之後描述能溶解本發明之組成物的溶 劑,諸如醋酸丙二醇單甲基醚酯(PGMEA,亦已知爲1-甲氧 基-2-乙醯氧基丙烷)、丙二醇單甲基醚(PGME,亦已知爲 Ο 1-甲氧基-2-丙醇)及環己酮。使用與在本發明之感光化射線 或感放射線樹脂組成物中所使用的溶劑相同之溶劑進行該 聚合更佳。藉由使用此溶劑,可抑制在儲存期間產生顆粒。 在惰性氣體環境(諸如氮或氬)中進行該聚合反應較 佳。至於該聚合起始劑,使用可商業購得的自由基起始劑 (例如,以偶氮爲基礎的起始劑、過氧化物)開始該聚合。 該自由基起始劑爲以偶氮爲基礎的起始劑較佳,及具有酯 -34- 201033732 基團'氰基或羧基之以偶氮爲基礎的起始劑較佳。該起始 劑的較佳實施例包括偶氮二異丁腈、偶氮雙二甲基戊腈及 二甲基2,2’-偶氮雙(2-甲基丙酸酯)。若須要時,額外或逐 部分地加入該起始劑。在反應完成後,將該反應產物充入 溶劑中,及藉由諸如粉末或固體回收之方法來回收想要的 聚合物。反應濃度從5至50質量%,且從10至30質量% 較佳;及反應溫度通常從10至150 °C,且從30至120 °C較 佳,從60至l〇〇°C更佳。 ❹The resin (A) can be synthesized by a usual method (for example, radical polymerization). Examples of the general synthetic method include a batch polymerization method in which a monomer species and an initiator are dissolved in a solvent and heating the solution, thereby achieving polymerization; and a dropping polymerization method which takes 1 to 10 hours, A solution comprising the monomeric species and the starter is added dropwise to the hot solvent. The dropping polymerization method is preferred. Examples of the reaction solvent include tetrahydrofuran, 1,4-dioxane, ethers (such as diisopropyl ether), ketones (such as methyl ethyl ketone and methyl isobutyl ketone), and ester solvents ( Such as ethyl acetate), guanamine solvent (such as dimethylformamide and dimethylacetamide), and a solvent which can dissolve the composition of the present invention, such as propylene glycol monomethyl ether acetate (PGMEA) Also known as 1-methoxy-2-ethenyloxypropane, propylene glycol monomethyl ether (PGME, also known as Ο 1-methoxy-2-propanol) and cyclohexanone. It is more preferable to carry out the polymerization using the same solvent as that used in the photosensitive ray or the radiation sensitive resin composition of the present invention. By using this solvent, generation of particles during storage can be suppressed. The polymerization is preferably carried out in an inert gas atmosphere such as nitrogen or argon. As for the polymerization initiator, the polymerization is started using a commercially available radical initiator (for example, an azo-based initiator, a peroxide). The radical initiator is preferably an azo-based initiator, and an azo-based initiator having an ester -34-201033732 group 'cyano or carboxyl group is preferred. Preferred examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile and dimethyl 2,2'-azobis(2-methylpropionate). The starter is added additionally or in part, if necessary. After completion of the reaction, the reaction product is charged into a solvent, and the desired polymer is recovered by a method such as powder or solid recovery. The reaction concentration is from 5 to 50% by mass, and preferably from 10 to 30% by mass; and the reaction temperature is usually from 10 to 150 ° C, and preferably from 30 to 120 ° C, more preferably from 60 to 10 ° C. . ❹
在反應完成後,讓該反應溶液冷卻至室溫及純化。可 藉由正常方法進行純化,例如,液體·液體萃取方法,其施 加水洗滌或結合適當溶劑來移除殘餘的單體或寡聚物組 分:在溶液狀態中的純化方法,諸如藉由僅提取具有分子 量不大於特定値的那些來移除之超微濾法;將該樹脂溶液 逐滴加入不良溶劑中,以在不良溶劑中固化該樹脂,因此 移除殘餘的單體及其類似物之再沉澱方法;及在固態中的 純化方法,諸如讓已藉由過濾分離的樹脂漿體接受以不良 溶劑洗滌之方法。例如,該樹脂藉由讓該反應溶液與一該 樹脂略微可溶或不溶的溶劑(不良溶劑,其體積量爲該反應 溶液的10倍或較少,從10至5倍較佳)接觸而以固體沉澱。 在從聚合物溶液中沉澱或再沉澱的操作中所使用的溶 劑(沉澱或再沉澱溶劑),若其對聚合物爲不良溶劑時可足 夠,及可使用的溶劑可根據聚合物的種類從例如下列中適 當地選擇:烴、鹵化烴、硝基化合物、醚、酮、酯、碳酸 酯、醇、竣酸、水及包含此溶劑的混合溶劑。在這些溶劑 當中,包含至少醇(特別是甲醇或其類似物)或水的溶劑作 -35- 201033732 爲該沉澱或再沉澱溶劑較佳。 可考慮效率、產率及其類似性質適當地選擇所使用的 沉澱或再沉澱溶劑之含量,但是通常來說,所使用的含量 爲每100質量份之聚合物溶液從100至10,〇〇〇質量份,且 從200至2,000質量份較佳,從300至1,000質量份更佳。 可考慮效率或可操作性適當地選擇在沉澱或再沉澱時 的溫度,但是通常在級數0至50t下,在鄰近室溫(例如, 大約從20至35 °C)處較佳。可使用通常使用的混合容器(諸 如攪拌槽),藉由已知方法(諸如批次系統及連續系統)進行 該沉澱或再沉澱操作。 該經沉澱或再沉澱的聚合物通常接受一般使用的固體 -液體分離(諸如過濾及離心),然後乾燥及使用。使用耐溶 劑性過濾器元件,在壓力下進行過濾較佳。在大氣壓或減 壓下(在減壓下較佳),於溫度大約從30至1 00°C下(在級數 30至5〇°C下較佳)進行乾燥。 附隨地’在該樹脂一旦經沉澱及分離後,可再次將該 樹脂溶解於溶劑中,然後將其放至與一該樹脂略微可溶或 不溶的溶劑接觸。也就是說,可使用下列方法,其包括: 在完成自由基聚合反應後,將該聚合物帶至與一該聚合物 略微可溶或不溶之溶劑接觸,以沉澱出一樹脂(步驟a);從 該溶液中分離出該樹脂(步驟b);將該樹脂再一次溶解於一 溶劑中,以製備一樹脂溶液A(步驟c);將該樹脂溶液A帶 至與一該樹脂略微可溶或不溶的溶劑接觸,及其中該溶劑 之體積量少於該樹脂溶液A的10倍(5倍或較少較佳),以 沉澱出_樹脂固體(步驟d);及分離所沉澱的樹脂(步驟e)。 201033732 就聚苯乙烯藉由GPC方法來說,該樹脂(A)的重量平 均分子量從1,〇〇〇至200,000較佳,從2,000至20,000更 佳,從3,000至15,000又更佳,而從5,000至13,000又更 佳。藉由將該重量平均分子量設定爲從1,000至200,000, 可防止耐熱性、抗乾蝕刻性及顯影能力降低;同樣地,由 於黏度提高,其可防止薄膜形成性質降低。 多分散性(分子量分布)通常從1至3,從1至2.6較佳, 從1至2更佳,從1.4至2.0又更佳。當多分散性較小時, 0 解析度及光阻外形更優良、光阻圖案的側壁較平滑、及更 改良就粗糙度而論的性質。 該樹脂(A)的加入量通常從50至99質量%,從70至 98質量%較佳,以該組成物的全部固體含量爲準》 在本發明中,至於該樹脂(A),可使用一種樹脂或可組 合著使用複數種樹脂。 [2] 能在以光化射線或輻射照射後產生酸的化合物(B) 本發明之組成物包括能在以光化射線或輻射照射後產 0 生酸的化合物(於此之後有時指爲”酸產生劑")。 可使用的酸產生劑可適當地選自於下列:用於陽離子 光聚合之光起始劑、用於自由基光聚合之光起始劑、用於 染料之光去色劑、光脫色劑、已知在以光化射線或輻射照 射後產生酸且使用於微光阻或其類似物中之化合物、及其 混合物。 此化合物的實施例包括重氮鹽、銹鹽、鏟鹽、錤鹽、 醯亞胺磺酸鹽、磺酸肟、重氮二颯、二颯及磺酸鄰-硝基苄 酯0 -37- 201033732 出自該等酸產生劑,由下列式(ZI)、(ZII)及(ZIII)所表 示的化合物較佳。After the reaction was completed, the reaction solution was allowed to cool to room temperature and purified. Purification can be carried out by a normal method, for example, a liquid/liquid extraction method, which employs water washing or a suitable solvent to remove residual monomer or oligomer components: a purification method in a solution state, such as by only Extracting ultrafiltration using those having a molecular weight not greater than a specific enthalpy; the resin solution is added dropwise to the poor solvent to cure the resin in a poor solvent, thus removing residual monomers and the like A reprecipitation method; and a purification method in a solid state, such as a method in which a resin slurry which has been separated by filtration is subjected to washing with a poor solvent. For example, the resin is contacted by contacting the reaction solution with a solvent which is slightly soluble or insoluble in the resin (a poor solvent having a volume of 10 times or less, preferably 10 to 5 times the reaction solution). Solid precipitation. The solvent (precipitating or reprecipitating solvent) used in the operation of precipitating or reprecipitating from the polymer solution may be sufficient if it is a poor solvent for the polymer, and the solvent which can be used may be, for example, depending on the kind of the polymer. The following are suitably selected: a hydrocarbon, a halogenated hydrocarbon, a nitro compound, an ether, a ketone, an ester, a carbonate, an alcohol, a citric acid, water, and a mixed solvent containing the solvent. Among these solvents, a solvent containing at least an alcohol (particularly methanol or the like) or water is preferably -35-201033732 as the precipitation or reprecipitation solvent. The content of the precipitation or reprecipitation solvent to be used may be appropriately selected in consideration of efficiency, productivity, and the like, but generally, the content is from 100 to 10 per 100 parts by mass of the polymer solution, 〇〇〇 The parts by mass are preferably from 200 to 2,000 parts by mass, more preferably from 300 to 1,000 parts by mass. The temperature at the time of precipitation or reprecipitation can be appropriately selected in consideration of efficiency or operability, but is usually preferably from 0 to 50 t in the vicinity of room temperature (e.g., from about 20 to 35 ° C). The precipitation or reprecipitation operation can be carried out by a known method such as a batch system and a continuous system using a commonly used mixing vessel such as a stirring tank. The precipitated or reprecipitated polymer is typically subjected to solid-liquid separation (such as filtration and centrifugation) which is generally used, followed by drying and use. Filtration under pressure is preferred using a solvent resistant filter element. Drying is carried out at atmospheric pressure or under reduced pressure (preferably under reduced pressure) at a temperature of from about 30 to 100 ° C (preferably at a temperature of from 30 to 5 ° C). Incidentally, once the resin is precipitated and separated, the resin may be dissolved again in a solvent, and then placed in contact with a solvent which is slightly soluble or insoluble in the resin. That is, the following methods can be used, including: after completion of the free radical polymerization, the polymer is brought into contact with a solvent which is slightly soluble or insoluble to the polymer to precipitate a resin (step a); Separating the resin from the solution (step b); dissolving the resin in a solvent again to prepare a resin solution A (step c); bringing the resin solution A to a slightly soluble or a resin Insoluble solvent contact, and the volume of the solvent is less than 10 times (5 times or less) of the resin solution A to precipitate a resin solid (step d); and separating the precipitated resin (step e). 201033732 In terms of polystyrene, the weight average molecular weight of the resin (A) is preferably from 1, 200 to 200,000, more preferably from 2,000 to 20,000, even more preferably from 3,000 to 15,000, and from 5,000 by the GPC method. It is even better to 13,000. By setting the weight average molecular weight to from 1,000 to 200,000, heat resistance, dry etching resistance, and developing ability can be prevented from being lowered; similarly, since the viscosity is improved, the film formation property can be prevented from being lowered. The polydispersity (molecular weight distribution) is usually from 1 to 3, preferably from 1 to 2.6, more preferably from 1 to 2, still more preferably from 1.4 to 2.0. When the polydispersity is small, the resolution of 0 and the shape of the photoresist are better, the sidewalls of the photoresist pattern are smoother, and the properties in terms of roughness are improved. The amount of the resin (A) to be added is usually from 50 to 99% by mass, preferably from 70 to 98% by mass, based on the total solid content of the composition. In the present invention, as for the resin (A), it may be used. A resin or a plurality of resins may be used in combination. [2] Compound (B) capable of generating an acid after irradiation with actinic rays or radiation The composition of the present invention includes a compound capable of producing an acid after irradiation with actinic rays or radiation (hereinafter sometimes referred to as "Acid generator". The acid generator which can be used can be suitably selected from the following: a photoinitiator for cationic photopolymerization, a photoinitiator for radical photopolymerization, and a light for dyes. Decolorizer, photodecolorizer, compound known to produce acid after irradiation with actinic radiation or radiation, and used in micro-resistance or the like, and mixtures thereof. Examples of this compound include diazonium salt, rust Salt, shovel salt, strontium salt, sulfhydrazine sulfonate, sulfonium sulfonate, diazonium dioxime, diterpene and o-nitrobenzyl sulfonate 0 -37- 201033732 from the acid generator, from the following formula The compounds represented by (ZI), (ZII) and (ZIII) are preferred.
R2041~^205R2041~^205
^206一丨 |· 〇^206一丨 |· 〇
〇II S—R207II ο (ΖΠΙ) 在式(ZI)中,R2()1、R2Q2及R2Q3各者各自獨立地代表 有機基團。 至於R2G1、R2G2及R2Q3的有機基團之碳數,其通常從〇II S-R207II ο (ΖΠΙ) In the formula (ZI), each of R2()1, R2Q2 and R2Q3 independently represents an organic group. As for the carbon number of the organic groups of R2G1, R2G2 and R2Q3, which are usually from
1至30,且從1至20較佳。 可結合出自R2 οι至R2 03的二個成員以形成一環結構, 及該環可包括氧原子、硫原子、酯鍵、醯胺鍵或羰基。藉 由結合出自R2Q1至R2 03的二個成員所形成之基團的實施例 包括伸烷基(例如,伸丁基、伸戊基)。 Z·代表非親核性陰離子。 至於該Z·之非親核性陰離子的實施例,其包括磺酸鹽 陰離子、羧酸鹽陰離子、碾基醯亞胺陰離子、雙(烷基颯基)1 to 30, and preferably from 1 to 20. Two members from R2 οι to R2 03 may be combined to form a ring structure, and the ring may include an oxygen atom, a sulfur atom, an ester bond, a guanamine bond or a carbonyl group. Examples of groups formed by combining two members derived from R2Q1 to R2 03 include an alkyl group (e.g., butyl group, pentyl group). Z· represents a non-nucleophilic anion. As an example of the non-nucleophilic anion of Z, which includes a sulfonate anion, a carboxylate anion, a ruthenium imine anion, a bis(alkyl fluorenyl) group
醯亞胺陰離子及三(烷基砸基)甲基陰離子。 該非親核性陰離子爲具有極低造成親核性反應的能力 之陰離子,及由於分子內親核性反應’此陰離子可抑制隨 著時效分解。由於此陰離子’該光阻的時效穩定性提高。 該磺酸鹽陰離子的實施例包括脂肪族磺酸鹽陰離子、 芳香族磺酸鹽陰離子及樟腦磺酸鹽陰離子。 該羧酸鹽陰離子的實施例包括脂肪族羧酸鹽陰離子、 芳香族羧酸鹽陰離子及芳烷基羧酸鹽陰離子。 在該脂肪族磺酸鹽陰離子及脂肪族羧酸鹽中的脂肪族 -38- 201033732 部分可爲烷基或環烷基,但是具有碳數1至30的烷基或具 有碳數3至30的環烷基較佳,及其實施例包括甲基、乙基、 丙基、異丙基、正丁基、異丁基、二級丁基、戊基、新戊 基、己基、庚基、辛基、壬基、癸基、十一烷基、十二燒 基、十三烷基、十四烷基、十五烷基、十六烷基、十七燒 基、十八烷基、十九烷基、廿烷基、環丙基、環戊基、環 己基、金剛烷基、降萡基及萡基。 在該芳香族磺酸鹽陰離子及芳香族羧酸鹽陰離子中的 0 芳香基團爲具有碳數6至14的芳基較佳,及其實施例包括 苯基、甲苯基及萘基。 在該脂肪族磺酸鹽陰離子及芳香族磺酸鹽陰離子中的 烷基、環烷基及芳基各者可具有取代基。在該脂肪族磺酸 鹽陰離子及芳香族磺酸鹽陰離子中的烷基、環烷基及芳基 之取代基的實施例包括硝基、鹵素原子(例如,氟、氯、溴、 碘)、羧基、羥基、胺基、氰基、烷氧基(具有碳數1至15 較佳)、環烷基(具有碳數3至15較佳)、芳基(具有碳數6 Ο 至14較佳)、烷氧基羰基(具有碳數2至7較佳)、醯基(具 有碳數2至12較佳)、烷氧基羰基氧基(具有碳數2至7較 佳)、烷硫基(具有碳數1至15較佳)、烷基楓基(具有碳數 1至15較佳)、烷基亞胺基碾基(具有碳數1至15較佳)、 芳基氧基楓基(具有碳數6至20較佳)、烷基芳基氧基楓基 (具有碳數7至20較佳)、環烷基芳基氧基楓基(具有碳數 10至20較佳)、烷基氧基烷基氧基(具有碳數5至20較佳)、 及環烷基烷基氧基烷基氧基(具有碳數8至20較佳)。至於 在每個基團中之芳基及環結構,該取代基的實施例進一步 201033732 包括烷基(具有碳數1至15較佳)。 在該芳烷基羧酸鹽陰離子中的芳烷基爲具有碳數6至 12的芳烷基較佳,及其實施例包括苄基、苯乙基、萘基甲 基、萘基乙基及萘基丁基。 在該脂肪族羧酸鹽陰離子、芳香族羧酸鹽陰離子及芳 烷基羧酸鹽陰離子中的烷基、環烷基、芳基及芳烷基各者 可具有取代基。該取代基的實施例包括與在該芳香族磺酸 鹽陰離子中的那些相同之鹵素原子、烷基、環烷基、烷氧An anthracene anion and a tris(alkylindenyl)methyl anion. The non-nucleophilic anion is an anion having a very low ability to cause a nucleophilic reaction, and the nucleophilic reaction in the molecule suppresses decomposition with aging. Due to this anion, the aging stability of the photoresist is improved. Examples of the sulfonate anion include an aliphatic sulfonate anion, an aromatic sulfonate anion, and a camphorsulfonate anion. Examples of the carboxylate anion include an aliphatic carboxylate anion, an aromatic carboxylate anion, and an aralkyl carboxylate anion. The aliphatic-38-201033732 moiety in the aliphatic sulfonate anion and the aliphatic carboxylate may be an alkyl group or a cycloalkyl group, but has an alkyl group having 1 to 30 carbon atoms or a carbon number of 3 to 30. The cycloalkyl group is preferred, and examples thereof include methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, secondary butyl, pentyl, neopentyl, hexyl, heptyl, octyl Base, fluorenyl, fluorenyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nineteen Alkyl, decyl, cyclopropyl, cyclopentyl, cyclohexyl, adamantyl, norbornyl and fluorenyl. The 0 aromatic group in the aromatic sulfonate anion and the aromatic carboxylate anion is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a tolyl group and a naphthyl group. Each of the alkyl group, the cycloalkyl group and the aryl group in the aliphatic sulfonate anion and the aromatic sulfonate anion may have a substituent. Examples of the substituent of the alkyl group, the cycloalkyl group and the aryl group in the aliphatic sulfonate anion and the aromatic sulfonate anion include a nitro group, a halogen atom (for example, fluorine, chlorine, bromine, iodine), A carboxyl group, a hydroxyl group, an amine group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), a cycloalkyl group (having preferably a carbon number of 3 to 15), and an aryl group (having a carbon number of 6 至 to 14 are preferred. , alkoxycarbonyl (preferably having 2 to 7 carbon atoms), mercapto (preferably having 2 to 12 carbon atoms), alkoxycarbonyloxy (preferably having 2 to 7 carbon atoms), alkylthio group (having preferably a carbon number of 1 to 15), an alkyl maple group (preferably having a carbon number of 1 to 15), an alkylimine group (having preferably a carbon number of 1 to 15), and an aryloxy maple group. (having preferably 6 to 20 carbon atoms), alkylaryloxy maple (preferably having 7 to 20 carbon atoms), cycloalkylaryloxy maple (having preferably 10 to 20 carbon atoms), The alkyloxyalkyloxy group (having preferably 5 to 20 carbon atoms) and the cycloalkylalkyloxyalkyloxy group (having preferably 8 to 20 carbon atoms) are preferred. As for the aryl group and ring structure in each group, the embodiment of the substituent further includes 2010 alkyl group (having preferably having a carbon number of 1 to 15). The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having a carbon number of 6 to 12, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group and Naphthylbutyl. Each of the alkyl group, the cycloalkyl group, the aryl group and the aralkyl group in the aliphatic carboxylate anion, the aromatic carboxylate anion and the aralkylcarboxylate anion may have a substituent. Examples of the substituent include the same halogen atom, alkyl group, cycloalkyl group, alkoxy group as those in the aromatic sulfonate anion.
基及烷硫基。 該楓基醯亞胺陰離子的實施例包括糖精陰離子。Base and alkylthio group. Examples of the maple quinone imine anion include a saccharin anion.
在該雙(烷基砸基)醯亞胺陰離子及三(烷基颯基)甲基 陰離子中的烷基爲具有碳數1至5的烷基較佳,及其實施 例包括甲基、乙基、丙基、異丙基、正丁基、異丁基、二 級丁基、戊基及新戊基。此烷基的取代基之實施例包括鹵 素原子、經鹵素原子取代的烷基、烷氧基、烷硫基、烷基 氧基楓基、芳基氧基碾基及環烷基芳基氧基碾基,且經氟 原子取代的烷基較佳。 附隨地,在該雙(烷基楓基)醯亞胺陰離子中的二個烷 基可相同或不同。類似地,在該三(烷基楓基)甲基陰離子 中的複數個烷基可相同或不同。 特別是,該雙(烷基楓基)醯亞胺陰離子及三(烷基颯基) 甲基陰離子爲由下列式(A3)或(A4)所表示的陰離子:The alkyl group in the bis(alkylindenyl)indolide anion and the tris(alkylindenyl)methyl anion is preferably an alkyl group having 1 to 5 carbon atoms, and examples thereof include methyl group and ethyl group. Base, propyl, isopropyl, n-butyl, isobutyl, secondary butyl, pentyl and neopentyl. Examples of the substituent of the alkyl group include a halogen atom, an alkyl group substituted with a halogen atom, an alkoxy group, an alkylthio group, an alkyloxy maple group, an aryloxy group, and a cycloalkylaryloxy group. The alkyl group which is ground and substituted with a fluorine atom is preferred. Incidentally, the two alkyl groups in the bis(alkyl Maple) quinone imine anion may be the same or different. Similarly, the plurality of alkyl groups in the tris(alkylbehenyl)methyl anion may be the same or different. In particular, the bis(alkyl Maple) quinone imine anion and the tris(alkylindenyl)methyl anion are anions represented by the following formula (A3) or (A4):
-40--40-
201033732 在式(A3)及(A4)中,γ爲由至少一個氟原子取 烷基,且具有碳數2至4的伸烷基較佳。該伸烷基 含氧原子。Υ爲具有碳數2至4的伸全氟烷基更佳 四氟乙基、伸六氟丙基或伸八氟丁基最佳。 在式(Α4)中’ R代表烷基或環烷基。在該烷基 基中的伸烷基鏈可包含氧原子。 該具有由式(A3)或(Α4)所表示的陰離子之化合 施例包括如在JP-A-2005-221721的特定實施例中所 那些。 該非親核性陰離子的其它實施例包括氟化的磷 的硼及氟化的銻。 該Ζ_之非親核性陰離子爲下列較佳:該磺酸的 位置由氟原子取代之脂肪族磺酸鹽陰離子、由氟原 氟原子基團取代的芳香族磺酸鹽陰離子、該烷基由 取代的雙(烷基颯基)醯亞胺陰離子、或該烷基由氟 代的三(烷基楓基)甲基陰離子。該非親核性陰離子 碳數4至8的全氟脂肪族磺酸鹽陰離子或具有氟原 磺酸鹽陰離子更佳,九氟丁烷磺酸鹽陰離子、全氟 酸鹽陰離子、五氟苯磺酸鹽陰離子或3,5_雙(三氟 磺酸鹽陰離子又更佳。 至於該Rm、Κ·2〇2及R2〇3的有機基團之實施例 括在之後描述的化合物(ZI-1)、(ZI-2)及(ZI-3)中之 團。 該化合物可爲一具有複數個由式(ZI)所表示的 化合物,例如,一具有在由式(ZI)所表示的化合物中 代的伸 鏈可包 ,且伸 或環院 物的實 描述之 、氟化 至少α - 子或含 氟原子 原子取 爲具有 子的苯 辛烷磺 甲基)苯 丨,其包 相應基 結構之 之 R_2 0 1 -41- 201033732 至R2〇3的至少一個經由單鍵或連結基團鍵結至在由式(ZI) 所表示的另一種化合物中之R2()1至R2〇3的至少一個之結構 的化合物。 該組分(ZI)爲描述在下列的化合物(ZI-1)、(ZI-2)或 (ZI-3)更佳。 該化合物(ZI-1)爲一在式(ZI)中的112()1至R2G3之至少 一個爲芳基的芳基鏑化合物,也就是說,一具有芳基銃作 爲陽離子的化合物。 在該芳基锍化合物中,R2()1至R2〇3全部可爲芳基,或 R2<n至R2C3的一部分可爲芳基且剩餘爲烷基或環烷基。 該芳基毓化合物的實施例包括三芳基銃化合物、二芳 基烷基锍化合物、芳基二烷基毓化合物、二芳基環烷基锍 化合物及芳基二環烷基銃化合物。 在該芳基銃化合物中的芳基爲苯基或萘基較佳,苯基 更佳。該芳基可爲具有雜環結構之芳基,其包含氧原子、 氮原子、硫原子或其類似原子。該雜環結構的實施例包括 吡咯殘基、呋喃殘基、噻吩殘基、吲哚殘基、苯并呋喃殘 基及苯并噻吩殘基。在該芳基锍化合物具有二或更多個芳 基的實例中,這二或更多個芳基可相同或不同。 存在於該芳基銃化合物中的烷基或環烷基(若想要時) 爲具有碳數1至15之線性或分支烷基或具有碳數3至15 的環烷基較佳,及其實施例包括甲基、乙基、丙基、正丁 基、二級丁基、三級丁基、環丙基、環丁基及環己基。 該尺2()1至R2Q3的芳基、烷基及環烷基各者可具有烷基 (例如,具有碳數1至15)、環烷基(例如,具有碳數3至15)、 -42- 201033732 芳基(例如,具有碳數6至14)、烷氧基(例如,具有碳數1 至15)、鹵素原子、羥基或苯硫基作爲取代基。該取代基爲 具有碳數1至12的線性或分支烷基、具有碳數3至12的 環烷基、或具有碳數1至12的線性、分支或環狀烷氧基較 佳,具有碳數1至4的烷基或具有碳數1至4的烷氧基更 佳。該取代基可取代在三個成員至R2G3之任何一個上 或可取代在這三個成員全部上。在R2Q1至R2G3爲芳基的實 例中,該取代基取代在芳基之對·位置處較佳。 下列描述該化合物(ΖΙ-2)。 該化合物(ΖΙ-2)爲在式(ΖΙ)中的R2()1至R2Q3各者各自 獨立地代表無芳香環的有機基團之化合物。如於本文中所 使用,該芳香環包括含雜原子的芳香環。 該作爲R2Q1至R2Q3之無芳香環有機基團具有碳數通常 從1至30,且從1至20較佳。 R2 01至R2 03各者各自獨立地代表烷基、環烷基、烯丙 基或乙烯基較佳,線性或分支的2-側氧烷基、2-側氧環烷 基或烷氧基羰基甲基更佳,線性或分支2-側氧烷基又更佳。 該R2<h至R2〇3的烷基及環烷基爲具有碳數1至10的 線性或分支烷基(例如,甲基、乙基、丙基、丁基、戊基) 及具有碳數3至10的環烷基(例如,環戊基、環己基、降 萡基)較佳。該烷基爲2-側氧烷基或烷氧基羰基甲基更佳。 該環烷基爲2-側氧環烷基更佳。 該2-側氧烷基可爲線性或分支,及在上述描述的烷基 之2-位置處具有>C = 0的基團較佳。 該2-側氧環烷基爲在上述描述的環烷基之2-位置處具 201033732 有>€ = 0的基團較佳。 在該烷氧基羰基甲基中的烷氧基爲具有碳數1至5的 烷氧基(例如,甲氧基、乙氧基、丙氧基、丁氧基、戊氧基) 較佳。 R2〇i至R2〇3各者可進一步由鹵素原子、烷氧基(例如, 具有碳數1至5)、羥基、氰基或硝基取代。 該化合物(ΖΙ·3)爲由下列式(ZI-3)所表示的化合物,及 此爲一具有苯醯甲銃鹽結構之化合物。In the formulae (A3) and (A4), γ is preferably an alkyl group having at least one fluorine atom and an alkylene group having 2 to 4 carbon atoms. The alkyl group contains an oxygen atom. Υ is preferably a perfluoroalkyl group having a carbon number of 2 to 4, preferably tetrafluoroethyl, hexafluoropropyl or octafluorobutyl. In the formula (Α4), 'R represents an alkyl group or a cycloalkyl group. The alkylene chain in the alkyl group may contain an oxygen atom. The compounding examples having an anion represented by the formula (A3) or (?4) include those as in the specific examples of JP-A-2005-221721. Other examples of such non-nucleophilic anions include boron of fluorinated phosphorus and fluorinated ruthenium. The non-nucleophilic anion of the oxime is preferably the following: an aliphatic sulfonate anion substituted with a fluorine atom at the position of the sulfonic acid, an aromatic sulfonate anion substituted with a fluorine atom atom group, the alkyl group A substituted tris(alkylmercapto)anthracene anion, or a fluorinated tris(alkylfranky)methyl anion of the alkyl group. The non-nucleophilic anion having a carbon number of 4 to 8 perfluoroaliphatic sulfonate anion or having a fluoroortane sulfonate anion, a nonafluorobutane sulfonate anion, a perfluoroacid anion, pentafluorobenzenesulfonic acid The salt anion or the 3,5-bis(trifluorosulfonate anion is more preferably. As for the organic group of the Rm, Κ2〇2 and R2〇3, the compound (ZI-1) described later is included. a group of (ZI-2) and (ZI-3). The compound may be a compound having a plurality of compounds represented by the formula (ZI), for example, one having a compound represented by the formula (ZI) The extension chain may be packaged, and the fluorinated at least α- or fluorine-containing atom atom is taken as a phenyloctane sulfomethyl)benzoquinone having a corresponding structure. At least one of R 2 0 1 -41 to 201033732 to R 2 〇 3 is bonded via a single bond or a linking group to at least one of R 2 () 1 to R 2 〇 3 in another compound represented by the formula (ZI) Structure of the compound. This component (ZI) is more preferably a compound (ZI-1), (ZI-2) or (ZI-3) described below. The compound (ZI-1) is an arylsulfonium compound in which at least one of 112()1 to R2G3 in the formula (ZI) is an aryl group, that is, a compound having an aryl group as a cation. In the arylsulfonium compound, R2()1 to R2〇3 may all be an aryl group, or a part of R2<n to R2C3 may be an aryl group and the remainder is an alkyl group or a cycloalkyl group. Examples of the arylsulfonium compound include a triarylsulfonium compound, a diarylalkylsulfonium compound, an aryldialkylsulfonium compound, a diarylcycloalkylsulfonium compound, and an arylbicycloalkylsulfonium compound. The aryl group in the arylsulfonium compound is preferably a phenyl group or a naphthyl group, and the phenyl group is more preferred. The aryl group may be an aryl group having a heterocyclic structure containing an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the heterocyclic structure include a pyrrole residue, a furan residue, a thiophene residue, an anthracene residue, a benzofuran residue, and a benzothiophene residue. In the example where the aryl hydrazine compound has two or more aryl groups, the two or more aryl groups may be the same or different. The alkyl or cycloalkyl group (if desired) present in the arylsulfonium compound is preferably a linear or branched alkyl group having 1 to 15 carbon atoms or a cycloalkyl group having 3 to 15 carbon atoms, and Examples include methyl, ethyl, propyl, n-butyl, secondary butyl, tert-butyl, cyclopropyl, cyclobutyl and cyclohexyl. The aryl group, the alkyl group and the cycloalkyl group of the ruthenium 2 () 1 to R 2 Q 3 may have an alkyl group (for example, having a carbon number of 1 to 15), a cycloalkyl group (for example, having a carbon number of 3 to 15), - 42-201033732 An aryl group (for example, having a carbon number of 6 to 14), an alkoxy group (for example, having a carbon number of 1 to 15), a halogen atom, a hydroxyl group or a phenylthio group as a substituent. The substituent is a linear or branched alkyl group having 1 to 12 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, or a linear, branched or cyclic alkoxy group having 1 to 12 carbon atoms, preferably having carbon The alkyl group having 1 to 4 or the alkoxy group having 1 to 4 carbon atoms is more preferable. The substituent may be substituted on either of the three members to R2G3 or may be substituted on all of the three members. In the case where R2Q1 to R2G3 are aryl groups, the substituent substitution is preferably at the position of the aryl group. This compound (ΖΙ-2) is described below. This compound (ΖΙ-2) is a compound in which each of R2()1 to R2Q3 in the formula (ΖΙ) independently represents an organic group having no aromatic ring. As used herein, the aromatic ring includes an aromatic ring containing a hetero atom. The aromatic-free organic group as R2Q1 to R2Q3 has a carbon number of usually from 1 to 30, and preferably from 1 to 20. R2 01 to R2 03 each independently represent an alkyl group, a cycloalkyl group, an allyl group or a vinyl group, a linear or branched 2-sided oxyalkyl group, a 2-sided oxocycloalkyl group or an alkoxycarbonyl group. The methyl group is more preferred, and the linear or branched 2-sided oxyalkyl group is more preferably. The alkyl group and the cycloalkyl group of R2 <h to R2〇3 are linear or branched alkyl groups having a carbon number of 1 to 10 (e.g., methyl, ethyl, propyl, butyl, pentyl) and having a carbon number A cycloalkyl group of 3 to 10 (for example, a cyclopentyl group, a cyclohexyl group, a norbornyl group) is preferred. The alkyl group is more preferably a 2-sided oxyalkyl group or an alkoxycarbonylmethyl group. The cycloalkyl group is more preferably a 2-sided oxocycloalkyl group. The 2-sided oxyalkyl group may be linear or branched, and a group having > C = 0 at the 2-position of the alkyl group described above is preferred. The 2-sided oxocycloalkyl group is preferably a group having a 201033732 > € = 0 at the 2-position of the cycloalkyl group described above. The alkoxy group in the alkoxycarbonylmethyl group is preferably an alkoxy group having 1 to 5 carbon atoms (e.g., methoxy group, ethoxy group, propoxy group, butoxy group, pentyloxy group). Each of R2〇i to R2〇3 may be further substituted by a halogen atom, an alkoxy group (for example, having a carbon number of 1 to 5), a hydroxyl group, a cyano group or a nitro group. This compound (ΖΙ·3) is a compound represented by the following formula (ZI-3), and is a compound having a benzoguanidine salt structure.
在式(ΖΙ-3)中,R!。至R5e各者各自獨立地代表氫原In the formula (ΖΙ-3), R!. Each of R5e independently represents the hydrogen source
子、線性或分支烷基(具有碳數1至12較佳)、環烷基(具有 碳數3至8較佳)、線性或分支烷氧基(在線性烷氧基的實 例中,具有碳數從1至12;及在分支烷氧基的實例中,從 3至8較佳)或鹵素原子。 尺6。及R7e各者各自獨立地代表氫原子、線性或分支烷 基(具有碳數1至12較佳)或環烷基(具有碳數3至8較佳)。 RX及Ry各者各自獨立地代表線性或分支烷基(具有碳 數1至12較佳)、環烷基(具有碳數3至8較佳)、烯丙基或 乙烯基。 出自Rlc至R5e、Re。與κ~7。對或^與Ry對的任何二 或更多個成員各者可結合在一起以形成環結構。此環結構 可包含氧原子、硫原子、酯鍵或酿胺鍵。a linear, branched or branched alkyl group (having preferably a carbon number of 1 to 12), a cycloalkyl group (having preferably a carbon number of 3 to 8), a linear or branched alkoxy group (in the case of a linear alkoxy group, having a carbon The number is from 1 to 12; and in the case of a branched alkoxy group, preferably from 3 to 8, or a halogen atom. Ruler 6. And R7e each independently represent a hydrogen atom, a linear or branched alkyl group (having preferably a carbon number of 1 to 12) or a cycloalkyl group (having preferably a carbon number of 3 to 8). Each of RX and Ry independently represents a linear or branched alkyl group (having preferably a carbon number of 1 to 12), a cycloalkyl group (having preferably a carbon number of 3 to 8), an allyl group or a vinyl group. From Rlc to R5e, Re. With κ~7. Any two or more members of the pair or with the Ry pair may be joined together to form a ring structure. This ring structure may contain an oxygen atom, a sulfur atom, an ester bond or a brewing amine bond.
ZcT代表非親核性陰離子,及其實施例與在式(ZI)中的 -44- 201033732 工_之那些非親核性陰離子相同。 1^及Ry各者爲具有碳數4或更多的烷基或環烷基較 佳,6或更多更佳,8或更多又更佳。 該化合物(ZI-3)的特定較佳實施例包括在 JP-A-2004-233661 的第 0046 及 0047 段與 JP-A-2003-35948 的第0040至0 04 6段中提出作爲實施例之化合物。 在式(ZII)及(ZIII)中,r2〇4至r2〇7各者各自獨立地代 表芳基、烷基或環烷基。 0 該R2〇4至R2Q7的芳基、烷基及環烷基與在化合物(ZI-l) 中的尺2()1至R2G3之芳基、烷基及環烷基相同。 該R2〇4至R2〇7的芳基、烷基及環烷基各者可具有取代 基。該取代基的實施例包括在化合物(ZI-1)中的R2G1至R2Q3 之芳基、烷基及環烷基可具有的那些。 代表非親核性陰離子,及其實施例與在式(ZI)中的 2_之那些非親核性陰離子相同。 該酸產生劑的其它實施例包括由下列式(ZIV)、(ZV) Λ 及(ZVI)所表示的化合物:ZcT represents a non-nucleophilic anion, and the examples thereof are the same as those of the non-nucleophilic anion of -44-201033732 in the formula (ZI). Each of 1^ and Ry is preferably an alkyl group or a cycloalkyl group having 4 or more carbon atoms, more preferably 6 or more, still more preferably 8 or more. Specific preferred embodiments of the compound (ZI-3) are disclosed in paragraphs 0046 and 0047 of JP-A-2004-233661 and paragraphs 0040 to 0 04 6 of JP-A-2003-35948 as examples. Compound. In the formulae (ZII) and (ZIII), each of r2〇4 to r2〇7 independently represents an aryl group, an alkyl group or a cycloalkyl group. The aryl group, the alkyl group and the cycloalkyl group of R2〇4 to R2Q7 are the same as the aryl group, the alkyl group and the cycloalkyl group of the rule 2()1 to R2G3 in the compound (ZI-1). Each of the aryl group, the alkyl group and the cycloalkyl group of R2〇4 to R2〇7 may have a substituent. Examples of the substituent include those which the aryl group, the alkyl group and the cycloalkyl group of R2G1 to R2Q3 in the compound (ZI-1) may have. Represents a non-nucleophilic anion, and the examples thereof are the same as those of the non-nucleophilic anion of the formula (ZI). Other examples of the acid generator include compounds represented by the following formulas (ZIV), (ZV) Λ and (ZVI):
ΑΓ3~S〇2<S〇2—Af4 (ZIV) R208*S〇2〇_N (ZV) 在式(ZIV)至(ZVI)中,Ar3及Ar4各者各自獨立地代表 芳基。 R2〇8、R2G9及RnG各者各自獨立地代表烷基、環烷基 或芳基。 A代表伸烷基、伸烯基或伸芳基。 -45- 201033732 在該酸產生劑當中,由式(ZI)至(ZIII)所表示的化合物 更佳。ΑΓ3~S〇2<S〇2—Af4 (ZIV) R208*S〇2〇_N (ZV) In the formulae (ZIV) to (ZVI), each of Ar3 and Ar4 independently represents an aryl group. Each of R2〇8, R2G9 and RnG independently represents an alkyl group, a cycloalkyl group or an aryl group. A represents an alkyl group, an alkenyl group or an aryl group. -45- 201033732 Among the acid generators, the compounds represented by the formulae (ZI) to (ZIII) are more preferable.
該酸產生劑爲產生具有一個磺酸基團或醯亞胺基團的 酸之化合物較佳,產生單價全氟烷磺酸的化合物、產生由 氟原子或含氟原子基團取代的單價芳香族磺酸之化合物、 或一產生由氟原子或含氟原子基團取代的單價醯亞胺酸化 合物更佳,經氟取代的烷磺酸、經氟取代的苯磺酸、經氟 取代的醯亞胺酸或經氟取代的甲基化物酸之銃鹽又更佳。 特別是,可使用的酸產生劑爲一產生經氟取代的烷磺酸、 經氟取代的苯磺酸或經氟取代的醯亞胺酸之化合物較佳, 其中所產生的酸之pKa爲-1或較少,及於此實例中,可提 高靈敏度。 出自該酸產生劑,下列提出特別佳的實施例。The acid generator is preferably a compound which produces an acid having a sulfonic acid group or a quinone imine group, a compound which produces a monovalent perfluoroalkanesulfonic acid, and a monovalent aromatic which is substituted by a fluorine atom or a fluorine atom group. a compound of a sulfonic acid, or a monovalent imidic acid compound which is substituted by a fluorine atom or a fluorine atom-containing group, preferably a fluorine-substituted alkanesulfonic acid, a fluorine-substituted benzenesulfonic acid, or a fluorine-substituted sulfonium. Amine acids or fluorinated methic acid sulfonium salts are more preferred. In particular, the acid generator which can be used is preferably a compound which produces a fluorine-substituted alkanesulfonic acid, a fluorine-substituted benzenesulfonic acid or a fluorine-substituted sulfimine, wherein the pKa of the acid produced is - 1 or less, and in this example, the sensitivity can be increased. From the acid generator, the following particularly preferred embodiments are presented.
-46- 201033732 (α S, CF3SO3·(η) (α: C4F9S03--46- 201033732 (α S, CF3SO3·(η) (α: C4F9S03-
CeFt7S〇3- (z3) (Φ+ (:[ΦCeFt7S〇3- (z3) (Φ+ (:[Φ
C^F^COO· pFs ^ P -O3S ^175¾-C^F^COO· pFs ^ P -O3S ^1753⁄4-
(z5) cf9 (z7) {0i + C2F5OC2F4SO3* ㈣ ㈣(z5) cf9 (z7) {0i + C2F5OC2F4SO3* (4) (4)
ch3coo- (z9)Ch3coo- (z9)
^s-^-F 〇-s-〇-sft3s-^-F (z1〇) (z11)^s-^-F 〇-s-〇-sft3s-^-F (z1〇) (z11)
C^FqSOj* o (z13)C^FqSOj* o (z13)
(Z12)(Z12)
bu〇~^3~ s+c4ft>Bu〇~^3~ s+c4ft>
FeSOr O^O- <z14)FeSOr O^O- <z14)
(z16) (~f~〇^+ c*f*s〇3· (ΗΌ)·;+ ·°33_^"ρ (*18) (z19) (z17)(z16) (~f~〇^+ c*f*s〇3· (ΗΌ)·;+ ·°33_^"ρ (*18) (z19) (z17)
201033732 CJF^O^· (*22) c^Or * (Z25) 1 〇 Γ N-O-S-CFj O (z28) /—v ? y* 9 O-s^s λ^f o o (z31)201033732 CJF^O^· (*22) c^Or * (Z25) 1 〇 Γ N-O-S-CFj O (z28) /—v ? y* 9 O-s^s λ^f o o (z31)
CFsSQr (Z21) CP3SOr ' (z24) dx^。-卜 (z27) O Hz 〇 ii ·* a s-c-s o i (230) C«FirS〇3r (Z23) aj^CFsSQr (Z21) CP3SOr ' (z24) dx^. -卜 (z27) O Hz 〇 ii ·* a s-c-s o i (230) C«FirS〇3r (Z23) aj^
C^fSOT (z26) (Bc^N-〇fCFi °(«29) .s^c-s-h- O 0 1 (z32)C^fSOT (z26) (Bc^N-〇fCFi °(«29) .s^c-s-h- O 0 1 (z32)
Me〇-Me〇-
CNCN
-rcp3-rcp3
HsCH2CH2C-S-〇, CFS CFj ^ 一。JO^。 o -S-CH2CHiiCH3 b (z33) (234) \s/> CFsSOr C4FeS〇r (*35) (Z36)HsCH2CH2C-S-〇, CFS CFj ^ one. JO^. o -S-CH2CHiiCH3 b (z33) (234) \s/> CFsSOr C4FeS〇r (*35) (Z36)
MeO •Or c^Fgsor (238)MeO • Or c^Fgsor (238)
CeF-|7S〇3- (z37) OBu 〇φ CASOr (z41) (239)CeF-|7S〇3- (z37) OBu 〇φ CASOr (z41) (239)
(z40) 〇4FgS〇3- o(z40) 〇4FgS〇3- o
(z43) -48- 201033732(z43) -48- 201033732
(ζ47) ο(ζ47) ο
(245) ο(245) ο
C4FsS〇rC4FsS〇r
〇 严 〇 ιβΗη C4F9SO3- C4FeSQ C4F»S〇a- (246)〇 严 〇 ιβΗη C4F9SO3- C4FeSQ C4F»S〇a- (246)
(252) (Ζ50) (ζ51)(252) (Ζ50) (ζ51)
(〇)*s+ ^»8^°+|··Λ<ϊ,5Ηϊ, (0}3^ •°»s-f+〇++csHe_〇~/^(〇)*s+ ^»8^°+|··Λ<ϊ,5Ηϊ, (0}3^ •°»s-f+〇++csHe_〇~/^
(ζ59) ο (ζ58) Ο F Ο(ζ59) ο (ζ58) Ο F Ο
ο (Ζ60) (Or Οο (Ζ60) (Or Ο
C2F5 〇=S—。2产5 Ο (α 3—c4f. S* (ζ61) 〇=S—〇4Fg Ο (ζ62) -- 201033732C2F5 〇=S-. 2 yield 5 Ο (α 3—c4f. S* (ζ61) 〇=S—〇4Fg Ο (ζ62) -- 201033732
C*FjS〇3· (ζ64) ΗC*FjS〇3· (ζ64) Η
C4F9S03- (ζβ5> (Ζ63) (〇)τ ο -C%S-CF2CFa〇F2-S-Nv ΟC4F9S03- (ζβ5> (Ζ63) (〇)τ ο -C%S-CF2CFa〇F2-S-Nv Ο
+ -OsS-CF2CFiCF2-S-N Ο \t (ζββ) (ζ67>9 9 -OaS-CFiCFiCFa-S-O-^^—(^3)"S+ ^°"|-^~|'0,:2〇^0,=2"|+ -OsS-CF2CFiCF2-SN Ο \t (ζββ) (ζ67>9 9 -OaS-CFiCFiCFa-SO-^^—(^3)"S+ ^°"|-^~|'0,:2〇 ^0,=2"|
Ο Μ S-F (*6β) (ζ69) (^^~s+ F3C4'N_i-cFiCFiCiv 曼.〇~0~0 Ο · ο (ζ70>Ο Μ S-F (*6β) (ζ69) (^^~s+ F3C4'N_i-cFiCFiCiv 曼.〇~0~0 Ο · ο (ζ70>
-〇3s (Ο): ο II o=s—c3f7 汧 *Ν、 0==S—C3F7 II (z71) 〇9 S+ O^S-CFaCW§-N ) (273) (α (Or-〇3s (Ο): ο II o=s-c3f7 汧 *Ν, 0==S—C3F7 II (z71) 〇9 S+ O^S-CFaCW§-N ) (273) (α (Or
F F (274) 越(oh·{卜f)3 (〇ϋ 一奶 休77)F F (274) Yue (oh·{Bu f)3 (〇ϋ一奶休休77)
(Q^S+CiF5S〇3- (^S+ C3F7SO3- (z79) (z80) (^S+ CeF«S〇3-(z81) -50- 201033732(Q^S+CiF5S〇3- (^S+ C3F7SO3- (z79) (z80) (^S+ CeF«S〇3-(z81) -50- 201033732
(z90) (291)(z90) (291)
-51- 201033732-51- 201033732
同樣地,較佳的酸產生劑包括由下列式(I)所表示的化 合物及能產生由下列式(P 1)所表示的酸之化合物。Also, a preferred acid generator includes a compound represented by the following formula (I) and a compound capable of producing an acid represented by the following formula (P1).
考慮到獲得本發明的效應,該酸產生劑爲在以光化射 線或輻射照射後所產生的酸(所產生的酸)之分子量爲300 或更大,且該酸具有單環或多環、脂環族或芳香環(其可包 含雜原子)之化合物較佳。例如,可從上述描述的酸產生劑 來選擇能產生此酸之化合物,從一由下列式(I)所表示的化 合物及一能產生由下列式(P1)所表示的酸之化合物選擇較 佳。In view of obtaining the effect of the present invention, the acid generator is such that the acid (produced acid) produced after irradiation with actinic rays or radiation has a molecular weight of 300 or more, and the acid has a monocyclic or polycyclic ring, A compound of an alicyclic or aromatic ring which may contain a hetero atom is preferred. For example, a compound capable of producing the acid can be selected from the above-described acid generator, and a compound represented by the following formula (I) and a compound capable of producing an acid represented by the following formula (P1) are preferably selected. .
所產生的酸之分子量爲320或更大較佳,340或更大 更佳及350或更大最佳。該分子量的上限爲6 0 0或較小較 佳,500或較小更佳。The molecular weight of the acid produced is preferably 320 or more, more preferably 340 or more and most preferably 350 or more. The upper limit of the molecular weight is preferably 600 or less, more preferably 500 or less.
© Θ X© Θ X
(I) (其中X +代表有機抗衡離子及R代表氫原子或有機基團)。 在式(I)中’ R代表氫原子或有機基團,且具有碳數1 至40的有機基團較佳,具有碳數3至20的有機基團更佳, 及由下列式(II)所表示的有機基團最佳。 -52- 201033732 該R的有機基團若其具有一或多個碳原子足夠,及鍵 結至在顯示於式(I)中的酯鍵中之氧原子的原子爲碳原子之 有機基團較佳,及其實施例包括烷基、環烷基、芳基、芳 烷基及具有內酯結構的基團。該有機基團可在鏈中包含雜 原子,諸如氧原子及硫原子。同樣地,這些基團之一可具 有另一種作爲取代基,或該有機基團可具有取代基,諸如 羥基、醯基、醯氧基、氧基( = 0)或鹵素原子。至於該R的 結構,由下列式(II)所表示的結構較佳。 ❹(I) (wherein X + represents an organic counterion and R represents a hydrogen atom or an organic group). In the formula (I), 'R represents a hydrogen atom or an organic group, and an organic group having a carbon number of 1 to 40 is preferred, an organic group having a carbon number of 3 to 20 is more preferable, and the following formula (II) The organic group represented is the best. -52- 201033732 The organic group of R is sufficient if it has one or more carbon atoms, and the organic group bonded to the oxygen atom in the ester bond shown in formula (I) is a carbon atom. Preferably, and examples thereof include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and a group having a lactone structure. The organic group may contain a hetero atom such as an oxygen atom and a sulfur atom in the chain. Likewise, one of these groups may have another substituent, or the organic group may have a substituent such as a hydroxyl group, a decyl group, a decyloxy group, an oxy group (= 0) or a halogen atom. As for the structure of the R, the structure represented by the following formula (II) is preferable. ❹
-(CH2)n-Rc-(Y)ffl (II) 在式(II)中,Rc代表具有碳數3至30之單環或多環的 環狀有機基團,其可包括環醚、環狀硫醚、環嗣、環狀碳 酸鹽、內酯或內醯胺結構;γ代表羥基、鹵素原子、氰基、 羧基、具有碳數1至10的烴基團、具有碳數1至10的羥 烷基、具有碳數1至10的烷氧基、具有碳數1至1〇的醯 基、具有碳數2至10的烷氧基羰基、具有碳數2至10的 醯氧基、具有碳數2至10的烷氧基烷基或具有碳數1至8 的鹵烷基團;m =從0至6;當存在有複數個Y時’每個Y 可與每個其它Y相同或不同;及n =從0至10。 構成由式(〗1)所表示的R基團之碳原子總數爲4〇或較 少較佳。 最好n =從〇至3及Rc爲具有碳數7至16之單環或多 環的環狀有機基團。 由式(I)所表示的化合物之分子量通常從 300至 1,000,且從400至800較佳,從500至700更佳。 該X+的有機抗衡離子之實施例包括銃陽離子及碘陽 -53- 201033732 離子。 由式(I)所表示的化合物之較佳具體實例包括由式 (ZSCi)及(ZIC1)所表示的化合物:-(CH2)n-Rc-(Y)ffl (II) In the formula (II), Rc represents a monocyclic or polycyclic carbon group having a carbon number of 3 to 30, which may include a cyclic ether or a ring. a thioether, a cyclic hydrazine, a cyclic carbonate, a lactone or an indoleamine structure; γ represents a hydroxyl group, a halogen atom, a cyano group, a carboxyl group, a hydrocarbon group having 1 to 10 carbon atoms, and a hydroxyl group having 1 to 10 carbon atoms. An alkyl group, an alkoxy group having 1 to 10 carbon atoms, a fluorenyl group having 1 to 1 carbon number, an alkoxycarbonyl group having 2 to 10 carbon atoms, a decyloxy group having 2 to 10 carbon atoms, having carbon a number of 2 to 10 alkoxyalkyl groups or a haloalkyl group having a carbon number of 1 to 8; m = from 0 to 6; when there are a plurality of Y's, each Y may be the same as or different from each other Y ; and n = from 0 to 10. The total number of carbon atoms constituting the R group represented by the formula (?1) is 4 Å or less. Preferably, n = from 〇 to 3 and Rc is a monocyclic or polycyclic cyclic organic group having 7 to 16 carbon atoms. The molecular weight of the compound represented by the formula (I) is usually from 300 to 1,000, and preferably from 400 to 800, more preferably from 500 to 700. Examples of the X+ organic counterion include phosphonium cations and iodine-53-201033732 ions. Preferable specific examples of the compound represented by the formula (I) include compounds represented by the formulas (ZSCi) and (ZIC1):
r201 F F R202^S^R203Q^|"fY〇'R ^2〇4-%2〇50〇-|^〇'« ^C1 Z|C1 在式(zsc Ο中,該R的定義及較佳範圍與在式(I)中所 定義的那些相同。R201 FF R202^S^R203Q^|"fY〇'R ^2〇4-%2〇50〇-|^〇'« ^C1 Z|C1 In the formula (zsc ,, the definition of R and better The range is the same as those defined in the formula (I).
該R2 0 1、R2Q2及R2Q3的定義、特定實施例、較佳具體 實例及其類似物與在式(ZI)中的R20!、R2Q2及R203之那些 相同。 在式(ZIC1)中,該R的定義及較佳範圍與在式(I)中所 定義的那些相同。 該R2Q4及R2〇5的定義、特定實施例、較佳具體實例及 其類似物與在式(ZII)中的R2〇4及R2〇5之那些相同。 下列提出由式(I)所表示的化合物之特定實施例,但是 本發明不限於這些化合物。在該等式中,顯示出在每種化 合物中的陰離子之分子量。 -54- 201033732 ptj :323.29 ^ &«:311.24 ^ ^1:32333The definitions, specific examples, preferred examples and the like of the R2 0 1 , R2Q2 and R2Q3 are the same as those of R20!, R2Q2 and R203 in the formula (ZI). In the formula (ZIC1), the definition and preferred range of the R are the same as those defined in the formula (I). The definitions, specific examples, preferred examples and analogs thereof of R2Q4 and R2〇5 are the same as those of R2〇4 and R2〇5 in the formula (ZII). Specific examples of the compound represented by the formula (I) are proposed below, but the invention is not limited to these compounds. In this equation, the molecular weight of the anion in each compound is shown. -54- 201033732 ptj :323.29 ^ &«:311.24 ^ ^1:32333
Qf-7> 〇 〇rV。*冷 aV。-^9 〇r-i) :353.38 广 308.31 Q 广·1 。知名^ q^Iq HV® 〇r 。你兮 0^-4) 〇r-5) ¢/-6) j^V :325.31 Q F 奸*: 341.31 p. ^:339.33 0¾ mV· 0¾e。仇梦h cXd hw®- σ·0) <v-r> ^Vj :33Τ.3β ^*: 351.34 pS 奸最:389.27 ❹ CM〇> CM1> 〇M2> ®Qf-7> 〇 〇rV. * Cold aV. -^9 〇r-i) : 353.38 wide 308.31 Q wide ·1 . Well known ^ q^Iq HV® 〇r. You 兮 0^-4) 〇r-5) ¢/-6) j^V :325.31 Q F **: 341.31 p. ^:339.33 03⁄4 mV· 03⁄4e.仇梦 h cXd hw®- σ·0) <v-r> ^Vj :33Τ.3β ^*: 351.34 pS trait: 389.27 ❹ CM〇>CM1>〇M2>
CM 4) CMS) ^Λ: 375.41 0^-1¾CM 4) CMS) ^Λ: 375.41 0^-13⁄4
MHI:385.41 ^ 奸《:SISI.39 Q F 各。*參。峽 cr-ιβ) CM 7) CM 8) 〇 (y^〇ih°^cy (f^4r^〇- (fxS^ih0^^ CM® (Y-20) (V-21) 分子鱟:3B7.34 分子量:351.30 0^-2¾ 0^-23) -55- 201033732 A 奸量:257^23cfe。^〇MHI: 385.41 ^ rape ": SISI.39 Q F each. * Participation. Gap cr-ιβ) CM 7) CM 8) 〇 (y^〇ih°^cy (f^4r^〇- (fxS^ih0^^ CM® (Y-20) (V-21) Molecular enthalpy: 3B7. 34 Molecular weight: 351.30 0^-23⁄4 0^-23) -55- 201033732 A The amount of rape: 257^23cfe.^〇
® . θ, 好量:24321 )lV5x> CY-25) 分子*: 231*20® . θ, Good quantity: 24321 ) lV5x> CY-25) Molecule*: 231*20
(★29) (Y-24) Q ,脚 Q 刑 a^s^· (Y-27) ^*:189.12 广| 好量:仍 (ΤΌ0^ crbe〇^ 17&09 cm (Υ·31) ^f*:253^5 |p»K 肝最 分子纛:343<41 'ΌιιΗυ (Y-33) (Y-34)(★29) (Y-24) Q, foot Q punishment a^s^· (Y-27) ^*:189.12 广| Good amount: still (ΤΌ0^ crbe〇^ 17&09 cm (Υ·31) ^ f*:253^5 |p»K Liver Molecular Weight: 343<41 'ΌιιΗυ (Y-33) (Y-34)
aV‘ 分子量mo Q| crbe〇^aV‘ molecular weight mo Q| crbe〇^
9 9 分子纛:32333 °^°te (Y-3B) (Y-37) 0T-3B)9 9 Molecular weight: 32333 °^°te (Y-3B) (Y-37) 0T-3B)
(^3¾ 分子量:203.23 0 a^b00^ crd0^' ㈣ _ ^4:25321 Ό-°η ^ »*:251.1β(^33⁄4 Molecular Weight: 203.23 0 a^b00^ crd0^' (4) _ ^4:25321 Ό-°η ^ »*:251.1β
ίΗ*2Βδ·21ΗΗ*2Βδ·21
分子量:32 WO 77丁慕· (^Q9〇^f'^9 〇M2) (Υ·44)Molecular weight: 32 WO 77 丁慕· (^Q9〇^f'^9 〇M2) (Υ·44)
ρ. ^*:275Λ Q f Q ρ 肝 (Y-4S) ΓΜ6) (V-47) 奸1::32333ρ. ^*:275Λ Q f Q ρ Liver (Y-4S) ΓΜ6) (V-47) Rape 1::32333
CM8) ^«V ^Λ:2Β327 ^ ^ 1¾0°^^ crbe〇^' (Υ-49) (Y-60) -56- 201033732 分子蠹:275.16 e〇lV^ 分子量:259.16 ,0ΐήΓ〇Τ?ρ <ν·5ί】CM8) ^«V ^Λ:2Β327 ^ ^ 13⁄40°^^ crbe〇^' (Υ-49) (Y-60) -56- 201033732 Molecular weight: 275.16 e〇lV^ Molecular weight: 259.16 , 0ΐήΓ〇Τ?ρ <ν·5ί】
奸囊:273.23 0<-52) (V-53) 分子暈:249.17 (Υ-54)Caterpillar: 273.23 0<-52) (V-53) Molecular halo: 249.17 (Υ-54)
分子量:261,18 分子薰:275.20Molecular weight: 261,18 molecular smoke: 275.20
奸最:255.17 (V-S5)θο-| cr-m ⑽) 分子量:39153The most profit: 255.17 (V-S5) θο-| cr-m (10)) Molecular weight: 39153
(TO 分子最:M1.32 ^^:339.29 |^v ^*:35t59CfsX) (XX)e〇·^^ (Y-99) (Υ-60) (Υ·61>(TO Molecular Most: M1.32 ^^: 339.29 |^v ^*: 35t59CfsX) (XX)e〇·^^ (Y-99) (Υ-60) (Υ·61>
cn _ J/ _ 201033732Cn _ J/ _ 201033732
aae〇-lV^ °^e〇lV^> 〇eJ^°W^y (傾) (Y-S9) 0 (心70)aae〇-lV^ °^e〇lV^> 〇eJ^°W^y (pour) (Y-S9) 0 (heart 70)
ΉΤ根 由式(I)所表示的化合物可藉由已知的方法(例如’ 據描述在JP-A-2007-161707中的方法)合成。The root compound represented by the formula (I) can be synthesized by a known method (for example, the method described in JP-A-2007-161707).
:可組 至於由式(I)所表示的化合物,可使用一種種類# 合著使用二或更多種種類。 <的酸之 至於該酸產生劑,能產生由下列式(Ρ 1)所表7^ D 化合物亦較佳。 ho3s: Configurable As for the compound represented by the formula (I), two or more kinds can be used in combination with one type #. <Acidity As for the acid generator, it is also preferred to produce a compound of the formula (4) which is represented by the following formula (Ρ 1). Ho3s
(Pi) -58- 201033732 在式(P1)中,1至Rs各者各自獨立地代表氫原子、焼 基、環烷基、鹵素原子或羥基;R9代表氫原子、烷基、環 烷基、烯基、醯基或-SOaRs ; A代表含雜原子的二價連結 基團或單鍵;Rs代表烷基、環烷基或芳基;ml至m4各者 各自獨立地代表整數0至12,其限制條件爲m3+m4g 1, m5代表整數1至3,及當ml至m5之任何一個爲整數2或 更大時,複數個1至R8及A成員各者可相同或不同。 於此,該烷基、環烷基及烯基可具有氟原子作爲取代 〇基。 該A之含雜原子的二價連結基團之實施例包括氧原 子、-CO-、-CONR-、-S02NR-、-CONRCO-、-S02NRC0-、 -S02NRS02-及-OCONR-,其中R代表氫原子、烷基或環烷 基。 1至R8各者各自獨立地爲氫原子、全氟烷基或氟原子 較佳,全氟烷基或氟原子更佳。A爲單鍵或氧原子較佳。 R9爲由-CORx表示的醯基較佳,其中Rx代表烷基、環烷 Q 基、芳基或雜芳基,及環烷基或芳基較佳。在式(P1)中, 該與S03H毗連的碳原子由氟原子或三氟甲基取代較佳。 該能產生具有由式(P1)所表示的結構之酸的化合物爲 由下列式(1-A)所表示的結構較佳:(Pi) -58- 201033732 In the formula (P1), each of 1 to Rs independently represents a hydrogen atom, a fluorenyl group, a cycloalkyl group, a halogen atom or a hydroxyl group; and R9 represents a hydrogen atom, an alkyl group, a cycloalkyl group, Alkenyl, indenyl or -SOaRs; A represents a divalent linking group or a single bond containing a hetero atom; Rs represents an alkyl group, a cycloalkyl group or an aryl group; and each of ml to m4 independently represents an integer from 0 to 12, The constraint is m3+m4g 1, m5 represents an integer of 1 to 3, and when any one of ml to m5 is an integer of 2 or more, the plurality of members 1 to R8 and A members may be the same or different. Here, the alkyl group, the cycloalkyl group and the alkenyl group may have a fluorine atom as a substituted fluorenyl group. Examples of the hetero atom-containing divalent linking group of the A include an oxygen atom, -CO-, -CONR-, -S02NR-, -CONRCO-, -S02NRC0-, -S02NRS02-, and -OCONR-, wherein R represents A hydrogen atom, an alkyl group or a cycloalkyl group. Each of 1 to R8 is independently a hydrogen atom, a perfluoroalkyl group or a fluorine atom, and a perfluoroalkyl group or a fluorine atom is more preferred. A is preferably a single bond or an oxygen atom. R9 is preferably a fluorenyl group represented by -CORx, wherein Rx represents an alkyl group, a cycloalkyl Q group, an aryl group or a heteroaryl group, and a cycloalkyl group or an aryl group is preferred. In the formula (P1), the carbon atom adjacent to S03H is preferably substituted by a fluorine atom or a trifluoromethyl group. The compound capable of producing an acid having a structure represented by the formula (P1) is preferably a structure represented by the following formula (1-A):
(1-A) -jy - 201033732 在式(l-A)中,1^至r9、a及ml至m5各別具有與在 式(P1)中的1至R9、A及mi至m5相同的意義;及M +代 表有機抗衡陽離子。 由M +所表示的有機抗衡離子爲碘或锍離子較佳,鏑離 子更佳。 由式(P1)所表示的酸爲由下列式(1_B)至(1_D)所表示 的結構更佳: ? ?F3 if1?1? F F / F F\ f H〇3S-f-f-〇Re H〇3S-|- | I j-OR, 1--1) 〇->=CF2 ,,J" F F H H F FV CFsF/me (1~®) O-C) (1-D) 在式(l-B)至(l-D)中,r9具有與在式(P1)中之R9相同 的意義;及m6代表整數〇至2。 特別是’能產生由式(P1)所表示的酸之化合物爲由下 列式(1-E)至(1-G)所表示的結構較佳: ©Θ f ?Fa MO3S—I~(-01¾ F Η (1^) M^S- (1-F) ®Θ ^ U 〇r9 mo3s—|—[4o—|—m-ο—1=cf2 F p\ cf3 (1-G) 在式(1-E)至(1-G)中,r9及M +具有與在式(1_A)中之 及M相同的意義,及m6具有與在式(i_D)中的m6相同 之意義。 下列出肖產生由式(P1)所表示的酸之化合物的特定 實施例’但是本發明不限於此》 201033732(1-A) -jy - 201033732 In the formula (1A), 1^ to r9, a and ml to m5 each have the same meaning as 1 to R9, A and mi to m5 in the formula (P1); And M + represents an organic counter cation. The organic counterion represented by M + is preferably iodine or ruthenium ion, and the ruthenium ion is better. The acid represented by the formula (P1) is preferably a structure represented by the following formulas (1_B) to (1_D): ?F3 if1?1? FF / FF\ f H〇3S-ff-〇Re H〇3S -|- | I j-OR, 1--1) 〇->=CF2 ,,J" FFHHF FV CFsF/me (1~®) OC) (1-D) In Equations (lB) to (lD) Wherein r9 has the same meaning as R9 in the formula (P1); and m6 represents an integer 〇 to 2. In particular, a compound capable of producing an acid represented by the formula (P1) is preferably represented by the following formulas (1-E) to (1-G): ©Θ f ?Fa MO3S-I~(-013⁄4 F Η (1^) M^S- (1-F) ®Θ ^ U 〇r9 mo3s—|—[4o—|—m-ο—1=cf2 F p\ cf3 (1-G) In -E) to (1-G), r9 and M + have the same meaning as M in the formula (1_A), and m6 has the same meaning as m6 in the formula (i_D). A specific embodiment of the compound of the acid represented by the formula (P1) 'but the invention is not limited thereto" 201033732
(Χ2) (Χ4)(Χ2) (Χ4)
(Χ8) (Χ8)(Χ8) (Χ8)
(Χ10) (Χ12)(Χ10) (Χ12)
°4-h3 a 八 廿 0ιγΛ=7~Γγ γ^] 0 F Η ° :383.27°4-h3 a 八廿 0ιγΛ=7~Γγ γ^] 0 F Η ° :383.27
(Κ13) (Κ15)(Κ13) (Κ15)
(Χ14) (Χ16) -61 - 201033732 (X18)(Χ14) (Χ16) -61 - 201033732 (X18)
α1 (X25)11 (X25)
分子量:229.1QMolecular weight: 229.1Q
分子量:161,11 (X26) OFF 〇 〇Molecular weight: 161,11 (X26) OFF 〇 〇
分子置:267.18 (X27)Molecular setting: 267.18 (X27)
切 Ti | I°^ΗΗ- O F F -) (X28) t: 329 25 asb〇1 OFF 0 F F 分子量:309 26Cut Ti | I°^ΗΗ- O F F -) (X28) t: 329 25 asb〇1 OFF 0 F F Molecular weight: 309 26
(X31) (X29)(X31) (X29)
(X3G) (X32) -62- 201033732(X3G) (X32) -62- 201033732
(X33)(X33)
(X37) (X39) (X35)(X37) (X39) (X35)
(X34) (X36) (Χ3Θ)(X34) (X36) (Χ3Θ)
Λ O F F F F F Fέ8> ^+f〇-h+〇+M-〇^ off cf3 f cf3 fΛ O F F F F F Fέ8> ^+f〇-h+〇+M-〇^ off cf3 f cf3 f
(X40) (X42) (X43) 分子量:609.14(X40) (X42) (X43) Molecular Weight: 609.14
Λ O F F F F F 0-S-(-0-|——1-0 (X44) CF3 F CF3 F 奸最:559.13 -- 201033732Λ O F F F F F 0-S-(-0-|——1-0 (X44) CF3 F CF3 F Most: 559.13 -- 201033732
j r» > *j r» > *
HOOC T o 分子最:315,27 (X47)HOOC T o Molecular maximum: 315, 27 (X47)
o (X48) 分子置:333.21o (X48) Molecular setting: 333.21
-64- 201033732 Ο-64- 201033732 Ο
Ο 陶Ο Tao
(Χ58) (Χ60)(Χ58) (Χ60)
t u r「 CF3 Ft u r" CF3 F
OFFOFF
Me〇-CH=N-〇^-H-〇+~h〇 F CN OFF F F (X85) 0 F CF3 =N-o-s—|—|—a cf3 off (X6B)Me〇-CH=N-〇^-H-〇+~h〇 F CN OFF F F (X85) 0 F CF3 =N-o-s—|—|—a cf3 off (X6B)
-65 - 201033732 該能在以光化射線或輻射照射後於該感光化射線或感 放射線樹脂組成物中產生酸的化合物(諸如由式(I)或(1-A) 所表示的化合物)之含量,從0.1至20質量%較佳,從0.5 至1 0質量%更佳,從1至7質量%又更佳,以該感光化射 線或感放射線樹脂組成物的全部固體含量爲準。 [3] 具有包含至少一個極性轉換基團的重覆單元且具有 至少氟原子或矽原子的任一個之樹脂(C) 本發明之感光化射線或感放射線樹脂組成物包括(C) 一具有至少一個極性轉換基團的重覆單元(〇,同時具有至 少氟原子或矽原子的任一個之樹脂。該樹脂(C)具有疏水 性,及特別考慮到減少顯影缺陷,加入該樹脂(C)較佳。 於此,該極性轉換基團爲一能藉由鹼性顯影劑之作用 分解以增加在鹸性顯影劑中的溶解度之基團。其實施例包 括內酯基團、羧酸酯基團(-COO-)、酸酐基團 (-C(Q)OC(O)-)、醯亞胺基團(-NHCONH-)、羧酸硫酯基團 (-C0S-)、碳酸酯基團(-OC(O)O-)、硫酸酯基團(-0S020-) 及磺酸酯基團(-so2o-)。 附隨地,直接鍵結至在重覆單元中的主鏈(諸如丙烯酸 酯)之酯基團,其在藉由鹼性顯影劑之作用分解來增加於鹼 性顯影劑中的溶解度之功能上差’且不包含在本發明之極 性轉換基團中。 該重覆單元(c)的實施例包括由式(K0)所表示的結構: 201033732 (Κ〇)-65 - 201033732 The compound capable of generating an acid (such as a compound represented by formula (I) or (1-A)) in the composition of the photosensitive ray or radiation sensitive resin after irradiation with actinic rays or radiation The content is preferably from 0.1 to 20% by mass, more preferably from 0.5 to 10% by mass, still more preferably from 1 to 7% by mass, based on the total solid content of the sensitized ray or the radiation-sensitive resin composition. [3] Resin (C) having a repeating unit containing at least one polarity converting group and having at least one of fluorine atoms or germanium atoms (C) The photosensitive ray or radiation sensitive resin composition of the present invention comprises (C) one having at least a repeating unit of a polar converting group (〇, a resin having at least one of a fluorine atom or a germanium atom. The resin (C) has hydrophobicity, and in particular, to reduce development defects, the addition of the resin (C) is more Preferably, the polar conversion group is a group which can be decomposed by the action of an alkaline developer to increase the solubility in the inert developer. Examples thereof include a lactone group and a carboxylate group. (-COO-), an acid anhydride group (-C(Q)OC(O)-), a quinone imine group (-NHCONH-), a carboxylic acid thioester group (-C0S-), a carbonate group ( -OC(O)O-), a sulfate group (-0S020-) and a sulfonate group (-so2o-). Attached directly to the backbone in the repeating unit (such as acrylate) An ester group which is poor in function to increase solubility in an alkaline developer by decomposition by an alkaline developer' and does not include In the polar conversion group of the present invention, the embodiment of the repeating unit (c) includes the structure represented by the formula (K0): 201033732 (Κ〇)
在該式中,Rkl代表氫原子、鹵素原子、羥基、烷基、 環烷基、芳基或具有極性轉換基團的基團;及In the formula, Rk1 represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group or a group having a polar conversion group;
Ru代表烷基、環烷基、芳基或具有極性轉換基團的基 團’其限制條件爲尺^與Rk2之至少任一個具有極性轉換基 團。 附隨地,如上所述,直接鍵結至由式(K0)所表示的重 覆單元之主鏈的酯基團不包含在本發明之極性轉換基團 中。 該極性轉換基團在由式(KA-1)或(KB-1)所表示之部分 結構中爲由X所表示的基團較佳:Ru represents an alkyl group, a cycloalkyl group, an aryl group or a group having a polar conversion group, which is restricted to have a polarity-switching group of at least one of Rm2 and Rk2. Incidentally, as described above, the ester group directly bonded to the main chain of the repeating unit represented by the formula (K0) is not contained in the polar conversion group of the present invention. The polar conversion group is preferably a group represented by X in a partial structure represented by the formula (KA-1) or (KB-1):
在式(KA-1)及(KB-1)中,X代表羧酸酯基團·· -COO-、 酸酐基團:-C(0)0C(0)-、醯亞胺基團:-NHCONH-、羧酸 硫酯基團:-COS-、碳酸酯基團:-0C(0)0-、硫酸酯基團: -OS020-、或磺酸酯基團:-S020-。 Y1及Y2各者可相同或不同,其代表吸電子基團。 附隨地,該重覆單元(C)藉由包含一具有由式(KA_1)或 (KB-1)所表示的部分結構之基團而具有較佳的極性轉換基 團,但是如在Y1及Y2爲單價之由式(KA-1)所表示的結構 或由式(KB-1)所表示的結構之實例中,當該部分結構不具 有一鍵結時,該具有部分結構的基團爲一產生自移除在該 201033732 部分結構中的至少一個任意氫原子而具有單價或較大價數 基團的基團。 由式(KA-1)或(KB-1)所表示的部分結構在任意位置處 經由一取代基連結至該樹脂(C)的主鏈。 由式(KA-1)所表示的部分結構爲一與如X的基團一起 形成一環結構之結構。 在式(KA-1)中,X爲羧酸酯基團(也就是說,形成如 KA-1的內酯環結構之實例)、酸酐基團或碳酸酯基團較In the formulae (KA-1) and (KB-1), X represents a carboxylate group··-COO-, an acid anhydride group: -C(0)0C(0)-, a quinone imine group:- NHCONH-, a carboxylic acid thioester group: -COS-, a carbonate group: -0C(0)0-, a sulfate group: -OS020-, or a sulfonate group: -S020-. Each of Y1 and Y2 may be the same or different and represents an electron withdrawing group. Incidentally, the repeating unit (C) has a preferred polarity-switching group by including a group having a partial structure represented by the formula (KA_1) or (KB-1), but as in Y1 and Y2 In the example of the structure represented by the formula (KA-1) or the structure represented by the formula (KB-1), when the partial structure does not have a bond, the group having the partial structure is one. A group having a monovalent or larger valence group derived from the removal of at least one arbitrary hydrogen atom in the 201033732 partial structure. The partial structure represented by the formula (KA-1) or (KB-1) is bonded to the main chain of the resin (C) via a substituent at an arbitrary position. The partial structure represented by the formula (KA-1) is a structure in which a ring structure is formed together with a group such as X. In the formula (KA-1), X is a carboxylate group (that is, an example of forming a lactone ring structure such as KA-1), an acid anhydride group or a carbonate group.
佳,羧酸酯基團更佳。 由式(KA-1)所表示的環結構可具有取代基,及例如可 具有nka個取代基Zkal。Preferably, the carboxylate group is more preferred. The ring structure represented by the formula (KA-1) may have a substituent, and may have, for example, nka substituents Zkal.
Zkal代表(當存在有複數個Zkal時,每個各自獨立地代 表)烷基、環烷基、醚基團、羥基、醯胺基團、芳基、內酯 環基團或吸電子基團。Zkal represents (each of which is independently represented when a plurality of Zkal are present) an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, a guanamine group, an aryl group, a lactone ring group or an electron withdrawing group.
Zkal可彼此結合以形成一環。藉由Zkal彼此結合所形 成的環之實施例包括環烷基環及雜環(例如,環醚環、內酯 環)。 nka代表整數〇至1〇,且整數〇至8較佳,整數0至Zkal can be combined with each other to form a ring. Examples of the ring formed by bonding Zkal to each other include a cycloalkyl ring and a heterocyclic ring (e.g., a cyclic ether ring, a lactone ring). Nka represents an integer 〇 to 1〇, and an integer 〇 to 8 is preferred, and the integer 0 is
5更佳,整數1至4又更佳及整數1至3最佳。 至於該吸電子基團Zkal,其具有與之後描述之Y1及 Y2吸電子基團(典型爲鹵素原子)相同的意義。 上述之吸電子基團可由另一個吸電子基團取代。5 is better, integers 1 to 4 are better and integers 1 to 3 are optimal. As for the electron withdrawing group Zkal, it has the same meaning as the Y1 and Y2 electron withdrawing groups (typically halogen atoms) described later. The above electron withdrawing group may be substituted by another electron withdrawing group.
Zkal爲烷基、環烷基、醚基團、羥基或吸電子基團較 佳’且烷基、環烷基或吸電子基團更佳。該醚基團爲例如 由烷基或環烷基取代的醚基團較佳,也就是說,烷基醚基 -68- 201033732 團或其類似基團較佳。該吸電子基團的較佳實施例與之後 描述之Y1及Y2的那些吸電子基團相同。 至於該鹵素原子zkal的實施例,其包括氟原子、氯原 子、溴原子及碘原子,且氟原子較佳。 至於該烷基zkal,其可具有取代基及可爲線性或分 支。該線性烷基爲具有碳數1至30的烷基較佳,從1至 20更佳,及其實施例包括甲基、乙基、正丙基、正丁基、 二級丁基、三級丁基、正戊基、正己基、正庚基、正辛基、 0 正壬基及正癸烷基。該分支烷基爲具有碳數3至30的烷基 較佳,從3至20更佳,及其實施例包括異丙基、異丁基、 三級丁基、異戊基、三級戊基、異己基、三級己基、異庚 基、三級庚基、異辛基、三級辛基、異壬基及三級癸烯醯 基。具有碳數1至4的烷基較佳,諸如甲基、乙基、正丙 基、異丙基、正丁基、異丁基及三級丁基。 至於該環烷基Zkal,其可具有取代基、可爲單環或多 環及可經交聯。例如,該環烷基可具有橋接的結構。該單 q 環的環烷基爲具有碳數3至8的環烷基較佳,及其實施例 包括環丙基、環戊基、環己基、環丁基及環辛基》該多環 的環烷基之實施例包括具有雙環、三環或四環結構及具有 碳數5或更多的基團。具有碳數6至20的環烷基較佳,及 其實施例包括金剛烷基、降萡基、異萡基、莰基、二環戊 基、(X-象素(ot-pinel)基團、三環癸基、四環十二烷基及雄 甾烷基。至於該環烷基,下列結構亦較佳。附隨地,在該 環烷基中的碳原子之一部分可由雜原子(諸如氧原子)置 換。 -69- 201033732 (13) o a«) (25) (2«) □> O Q> W W (3)Zkal is preferably an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group or an electron withdrawing group and is preferably an alkyl group, a cycloalkyl group or an electron withdrawing group. The ether group is preferably an ether group substituted with, for example, an alkyl group or a cycloalkyl group, that is, an alkyl ether group -68 to 201033732 group or the like is preferred. The preferred embodiment of the electron withdrawing group is the same as those of the Y1 and Y2 described later. As the embodiment of the halogen atom zkal, it includes a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferred. As the alkylzkal, it may have a substituent and may be linear or branched. The linear alkyl group is preferably an alkyl group having 1 to 30 carbon atoms, more preferably from 1 to 20, and examples thereof include methyl, ethyl, n-propyl, n-butyl, butyl, and tertiary. Butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, 0-n-decyl and n-decyl. The branched alkyl group is preferably an alkyl group having 3 to 30 carbon atoms, more preferably from 3 to 20, and examples thereof include isopropyl, isobutyl, tert-butyl, isopentyl, and tertiary pentyl groups. , isohexyl, tertiary hexyl, isoheptyl, tertiary heptyl, isooctyl, tertiary octyl, isodecyl and tertiary terpene fluorenyl. The alkyl group having 1 to 4 carbon atoms is preferred, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl and tert-butyl. As the cycloalkyl group Zkal, it may have a substituent, may be monocyclic or polycyclic, and may be crosslinked. For example, the cycloalkyl group can have a bridged structure. The cycloalkyl group of the mono q ring is preferably a cycloalkyl group having a carbon number of 3 to 8, and examples thereof include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclobutyl group and a cyclooctyl group. Examples of the cycloalkyl group include a group having a bicyclic, tricyclic or tetracyclic structure and having a carbon number of 5 or more. A cycloalkyl group having 6 to 20 carbon atoms is preferred, and examples thereof include adamantyl, norbornyl, isodecyl, fluorenyl, dicyclopentyl, (X-pixel) groups. , tricyclodecyl, tetracyclododecyl and androstanyl. As for the cycloalkyl, the following structure is also preferred. Incidentally, one of the carbon atoms in the cycloalkyl group may be a hetero atom such as oxygen. Atomic) replacement -69- 201033732 (13) oa«) (25) (2«) □> O Q> WW (3)
O〇 . CO COO〇 . CO CO
<4) (S) W ① CO 〇〇〇 ^ /fi\ /Λ o? (ie> (Π) (U) 〇5°<4) (S) W 1 CO 〇〇〇 ^ /fi\ /Λ o? (ie> (Π) (U) 〇 5°
(IS) >A (W) ^ 〇4 Jb (20) (21) (均 (») A ob \ ,,c\ i^c\ nm (24) ^ <d^\ (M) W W 01) ^ ㈣ 04) 例 知 ^bb。。(IS) >A (W) ^ 〇4 Jb (20) (21) (both (») A ob \ ,,c\ i^c\ nm (24) ^ <d^\ (M) WW 01 ) ^ (4) 04) Example knows ^bb. .
W ¢57) ㈣ W ω ^ ^? £> («) («> («) {43) 〇5) ® 么 ㈣(45) (46} 〇 〇 Ο 〇 (47) (48) (49) (50) 該較佳的脂環族部分包括金剛烷基、降金剛烷基、萘 烷基團、三環癸基、四環十二烷基、降萡基、雪松醇基團、 環己基、環庚基、環辛基、環癸烷基及環十二烷基。金剛 烷基、萘烷基團、降萡基、雪松醇基團、環己基、環庚基、 環辛基、環癸烷基、環十二烷基及三環癸基更佳。 該脂環族結構的取代基包括烷基、鹵素原子、羥基、 烷氧基、羧基及烷氧基羰基。該烷基爲低碳烷基較佳,諸 如甲基、乙基、丙基、異丙基及丁基,且甲基、乙基、丙 基或異丙基更佳。該烷氧基爲具有碳數1至4的烷氧基較 -70- 201033732 佳,諸如甲氧基、乙氧基、丙氧基及丁氧基。該烷基及烷 氧基可具有的取代基之實施例包括羥基、鹵素原子及烷氧 基(具有碳數1至4較佳)。 該Zkal的內酯環基團之實施例包括產生自移除在由之 後描述的式(KA-1-1)至(KA-1-17)之任何一種所表示的結 構中之氫原子的基團。 該Zkal的芳基之實施例包括苯基及萘基。W ¢57) (4) W ω ^ ^? £> («) («> («) {43) 〇5) ® (4)(45) (46} 〇〇Ο 〇(47) (48) (49 (50) The preferred alicyclic moiety comprises adamantyl, norantantyl, naphthyl, tricyclodecyl, tetracyclododecyl, norbornyl, cedarol, cyclohexyl , cycloheptyl, cyclooctyl, cyclodecyl and cyclododecyl. adamantyl, naphthyl group, thiol group, cedar group, cyclohexyl, cycloheptyl, cyclooctyl, ring More preferably, the alkyl group, the cyclododecyl group and the tricyclodecyl group. The substituent of the alicyclic structure includes an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group and an alkoxycarbonyl group. Alkyl groups are preferred, such as methyl, ethyl, propyl, isopropyl and butyl, and more preferably methyl, ethyl, propyl or isopropyl. The alkoxy group has a carbon number of 1 to 4. The alkoxy group is preferably more than -70 to 201033732, such as methoxy, ethoxy, propoxy and butoxy. Examples of the substituent which the alkyl group and the alkoxy group may have include a hydroxyl group, a halogen atom and an alkane. An oxy group (having preferably a carbon number of 1 to 4). The lactone ring of the Zkal Examples of the group include a group derived from a hydrogen atom removed in a structure represented by any one of the formulae (KA-1-1) to (KA-1-17) described later. Examples of the base include phenyl and naphthyl.
該zkal之烷基、環烷基及芳基可進一步具有的取代基 之實施例包括羥基、鹵素原子(例如,氟、氯、溴、碘)、 硝基、氰基、上述描述的烷基、烷氧基(諸如,甲氧基、乙 氧基、羥基乙氧基、丙氧基、羥基丙氧基、正丁氧基、異 丁氧基、二級丁氧基及三級丁氧基)、烷氧基羰基(諸如, 甲氧基羰基及乙氧基羰基)、芳烷基(諸如苄基、苯乙基及 芡基)、芳烷基氧基、醯基(諸如甲醯基、乙醯基、丁醯基、 苄醯基、桂皮基及戊醯基)、醯氧基(諸如丁醯氧基)、上述 描述的烯基、烯氧基(諸如乙烯基氧基、丙烯基氧基、烯丙 氧基及丁烯基氧基)、上述描述的芳基、芳氧基(諸如苯氧 基)、及芳氧基羰基(諸如苄醯氧基)。 在較佳的具體實施例中,在式(KA-1)中之X爲羧酸酯 基團’及由式(KA-1)所表示的部分結構爲內酯環,5至7 員內酯環較佳。 附隨地,最好如在顯示於下列的(KA-1-1)至(KA-1-1 7) 中’另一個環結構以形成雙環或螺結構的形式稠和至5至 7員內酯環’作爲該由式(KA-1)所表示的部分結構。 該由式(KA-1)所表示的環結構可結合之圓環結構的實 201033732 施例包括在顯示於下列(KA-l-l)至(KA-1-17)中的那些及 根據隨後的結構。 包含由式(KA-1)所表示的內酯環結構之結構爲一由下 列(KA-1-1)至(KA-1-17)之任何一種所表示的結構更佳。該 內酯結構可直接鍵結至主鏈。較佳的結構有(KA-1 -1)、 (KA-1 -4) ' (KA-1-5)、(KA-1.6)、(KA-1-13)、(KA-1-14)及 (KA-1-17) 〇Examples of the substituent which the alkyl group, the cycloalkyl group and the aryl group of zkal may further have include a hydroxyl group, a halogen atom (for example, fluorine, chlorine, bromine, iodine), a nitro group, a cyano group, an alkyl group described above, Alkoxy (such as methoxy, ethoxy, hydroxyethoxy, propoxy, hydroxypropoxy, n-butoxy, isobutoxy, bis-butoxy and tert-butoxy) , alkoxycarbonyl (such as methoxycarbonyl and ethoxycarbonyl), aralkyl (such as benzyl, phenethyl and decyl), aralkyloxy, fluorenyl (such as formazan, B) Anthracenyl, butyl fluorenyl, benzamidine, cinnamyl and pentamidine), anthraceneoxy (such as butanoxy), alkenyl, alkenyloxy (such as vinyloxy, propenyloxy, alkene) as described above Propyloxy and butenyloxy), an aryl group as described above, an aryloxy group (such as a phenoxy group), and an aryloxycarbonyl group (such as a benzhydryloxy group). In a preferred embodiment, X in the formula (KA-1) is a carboxylate group ' and a partial structure represented by the formula (KA-1) is a lactone ring, 5 to 7 lactone The ring is preferred. Incidentally, it is preferable to condense to another 5 to 7-membered lactone in the form of a bicyclic or spiro structure as shown in (KA-1-1) to (KA-1-1 7) below. The ring 'is a partial structure represented by the formula (KA-1). The actual 201033732 embodiment of the ring structure to which the ring structure represented by the formula (KA-1) can be combined includes those shown in the following (KA-ll) to (KA-1-17) and according to the subsequent structure. . The structure including the lactone ring structure represented by the formula (KA-1) is preferably a structure represented by any one of the following (KA-1-1) to (KA-1-17). The lactone structure can be bonded directly to the backbone. Preferred structures are (KA-1 -1), (KA-1 -4) ' (KA-1-5), (KA-1.6), (KA-1-13), (KA-1-14) And (KA-1-17) 〇
該包含上述描述的內酯環結構之結構可或可不具有取 代基。該取代基的較佳實施例與由式(KA-1)所表示的環結 構可具有之那些取代基相同。 某些內酯結構具有光學異構物,但是可使用任何光學 I# 異構物。可單獨使用—種光學異構物,或可使用複數種光 學異構物的混合物。在主要使用一種光學異構物的實例 中,其光學純度(ee)爲90 %或更大較佳,95 %或更大更佳及 98%或更大最佳。 在式(KB·1)中,X爲羧酸酯基團(-COO-)較佳。 在式(KB-1)中,γι及γ2各者各自獨立地代表吸電子基 團》 -72- 201033732 該吸電子基團爲由下列式(EW)所表示的部分結構較 佳。在式(EW)中,*指爲直接鍵結至(KA-1)的鍵或直接鍵結 至在(KB-1)中的X之鍵。The structure comprising the lactone ring structure described above may or may not have a substituent. The preferred embodiment of the substituent is the same as those which may be possessed by the ring structure represented by the formula (KA-1). Some lactone structures have optical isomers, but any optical I# isomer can be used. The optical isomer may be used alone or a mixture of a plurality of optical isomers may be used. In the case of mainly using one optical isomer, the optical purity (ee) is preferably 90% or more, more preferably 95% or more, and most preferably 98% or more. In the formula (KB·1), X is preferably a carboxylate group (-COO-). In the formula (KB-1), each of γι and γ2 independently represents an electron withdrawing group. -72 - 201033732 The electron withdrawing group is preferably a partial structure represented by the following formula (EW). In the formula (EW), * means a bond directly bonded to (KA-1) or directly bonded to a bond of X in (KB-1).
Kwl *· R©w2 (EW)Kwl *· R©w2 (EW)
在式(EW)中,new爲由- C(Rewl)(Rew2)-所表示的連結基 團之重覆數目及代表整數0或1。在new爲0的實例中,此 指示出該鍵結由單鍵形成及Yewl直接鍵結。In the formula (EW), new is the number of overlaps of the linking group represented by -C(Rewl)(Rew2)- and represents an integer of 0 or 1. In the case where new is 0, this indicates that the bond is formed by a single bond and Yewl is directly bonded.
Yewi爲鹵素原子、氰基、腈基團、硝基、由之後描述 之-C(Rfl)(Rf2)-Rf3所表示的鹵(環)烷基或鹵芳基、氧基、 羰基、颯基、亞楓基或其組合。該吸電子基團可例如爲顯 示在下列的結構。名稱"鹵(環)烷基"指爲至少經部分鹵化的 烷基或環烷基。Re W3及Rew4各者各自獨立地代表任意的結 構。由式(EW)所表示的部分結構可具有吸電子基團及結合 例如至樹脂主鏈(不管Rew3及Rew4之結構),但是烷基、環 院基或氟化院基較佳。Yewi is a halogen atom, a cyano group, a nitrile group, a nitro group, a halogen (cyclo)alkyl group or a halogeno group represented by -C(Rfl)(Rf2)-Rf3 described later, an oxy group, a carbonyl group, a fluorenyl group. , Ya Fengji or a combination thereof. The electron withdrawing group can be, for example, a structure shown below. The designation "halo(cyclo)alkyl" refers to an alkyl or cycloalkyl group that is at least partially halogenated. Each of Re W3 and Rew4 independently represents an arbitrary structure. The partial structure represented by the formula (EW) may have an electron withdrawing group and a bonding such as a resin main chain (regardless of the structure of Rew3 and Rew4), but an alkyl group, a ring-based group or a fluorinated group is preferred.
*C—N— t*C—N— t
•S—N一R· II I 1^0 Rew3•S—N—R· II I 1^0 Rew3
在Yewl爲二價或較大價數基團之實例中,剩餘的鍵與 任意的原子或取代基形成鍵結。Yewl、Rewl及Rew2之至少 任何一個基團可經由進一步取代基與樹脂(C)的主鏈結合。 r-try -/J - 201033732In the case where Yewl is a divalent or larger valence group, the remaining bond forms a bond with any atom or substituent. At least any one of the groups of Yewl, Rewl and Rew2 may be bonded to the main chain of the resin (C) via a further substituent. R-try -/J - 201033732
Yewl爲鹵素原子或由-C(Rfl)(Rf2)-Rf3所表示的鹵(環) 烷基或鹵芳基較佳。Yewl is preferably a halogen atom or a halogen (cyclo)alkyl group or a halogen aryl group represented by -C(Rfl)(Rf2)-Rf3.
Rewl及Rew2各者各自獨立地代表任意的取代基,例 如,代表氫原子、烷基、環烷基或芳基。 出自Rewl、Rew2及Yewl之至少二個成員可彼此結合以 形成一環。Each of Rewl and Rew2 independently represents an arbitrary substituent, for example, a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group. At least two members from Rewl, Rew2, and Yewl may be combined with each other to form a ring.
Rn代表鹵素原子、全鹵烷基、全鹵環烷基或全鹵芳 基,且氟原子、全氟烷基或全氟環烷基較佳,氟原子或三Rn represents a halogen atom, a perhaloalkyl group, a perhalocycloalkyl group or a perhaloaryl group, and a fluorine atom, a perfluoroalkyl group or a perfluorocycloalkyl group is preferred, a fluorine atom or three
氟甲基更佳。More fluoromethyl groups.
Rf2及Rf3各者各自獨立地代表氫原子、鹵素原子或有 機基團,及1^2與Rf3結合以形成一環。該有機基團的實施 例包括烷基、環烷基及烷氧基,及這些基團可由鹵素原子 (氟原子較佳)取代。Rf2及Rn各者爲(鹵)烷基較佳。Rf2爲 與Rn相同的基團更佳,或與Rf3結合以形成一環。Each of Rf2 and Rf3 independently represents a hydrogen atom, a halogen atom or an organic group, and 1^2 is bonded to Rf3 to form a ring. Examples of the organic group include an alkyl group, a cycloalkyl group and an alkoxy group, and these groups may be substituted by a halogen atom (preferably a fluorine atom). It is preferred that each of Rf2 and Rn is a (halo)alkyl group. Rf2 is preferably the same group as Rn or is bonded to Rf3 to form a ring.
Rf2及Rf3可結合以形成一環,及所形成的環之實施例 包括(鹵)環烷基環及(鹵)芳基環。Rf2 and Rf3 may be combined to form a ring, and examples of the ring formed include a (halo)cycloalkyl ring and a (halo)aryl ring.
在該Rn至Rn中的(鹵)烷基之實施例包括在Zkal中的 烷基及其經鹵化的結構。 在該Rn至Rn中或在藉由結合Rf2與Rn所形成的環 中之(全)鹵環烷基及(全)鹵芳基的實施例包括一產生自在 Zkal中的環烷基之鹵化反應的結構,由-C⑷F(2n_2>H所表示 的氟環烷基及由-(:㈠彳㈠⑴所表示的全氟芳基較佳,其中該 碳數η無特別限制,但是從5至1 3較佳,6更佳。 該可藉由Rewl、Rew2及Yewl之至少二個成員彼此結合 所形成的環爲環烷基或雜環基團較佳,及該雜環基團爲內 -74- 201033732 酯環基團較佳。該內酯環的實施例包括由式(KA-l-l)至 (KA-1-17)所表示的結構。 附隨地’該重覆單元(c)可具有複數個由式(KAH)所表 示的部分結構、複數個由式(KB-1)所表示的部分結構、或 式(KA-1)的部分結構與式(KB-1)的部分結構二者。 於此’該式(KA-1)之部分結構亦可部分或完整地提供 作爲在式(KB-1)中的Y1或Y2之吸電子基團。例如,在式 (KA-1)中的X爲羧酸酯基團之實例中,該羧酸酯基團可作 0 用爲在式(KB-1)中的Y1或Y2之吸電子基團。 該重覆單元(c)可爲一重覆單元(c’),其在一側鏈上具 有至少氟原子或矽原子之任一個及極性轉換基團;一重覆 單元(C*),其具有極性轉換基團且不具有氟原子或矽原 子:或一重覆單元(C"),其在一側鏈上具有極性轉換基團, 同時在相同重覆單元中,與上述不同側鏈之側鏈上具有至 少氟原子或矽原子之任一個,但是該樹脂(C)包括重覆單元 (c’)作爲該重覆單元(c)較佳。也就是說,最好該具有至少 Q —個極性轉換基團的重覆單元(〇具有至少氟原子或矽原 子之任一個。 在該樹脂(C)包括重覆單元(c*)的實例中’該樹脂爲一 含有一具有至少氟原子或矽原子的任一個之重覆單元(之 後描述的重覆單元(cl))的共聚物較佳。同樣地’在該重覆 單元(c")中,該具有極性轉換基團的側鏈及該具有至少氟原 子或矽原子的任一個之側鏈鍵結至在主鏈中的相同碳原子 較佳,也就是說,具有如下列式(K1)的位置關係。 在該式中,Β1代表具有極性轉換基團的部分結構’及 201033732 B2代表具有至少氟原子或矽原子的任一個之部分結構。 B1 才、七(K1) B2 同樣地,在該重覆單元(C*)及重覆單元(C")中,該極性 轉換基團爲在式(KA-I)的結構中由-COO-所表示的部分結 構更佳。 該極性轉換基團藉由鹼性顯影劑之作用分解以達成極 性轉換,藉此可減低該樹脂組成物薄膜在鹼顯影後與水的 後退接觸角。 該樹脂組成物薄膜在鹼顯影後,在曝光期間的溫度(通 常在室溫23±3°C下)及濕度45±5%下,與水的後退接觸角爲 5 0°或較小較佳,4(Τ或較小更佳,35°或較小又更佳及30° 或較小最佳。 後退接觸角爲當在液滴-基材界面上的接觸線條縮回 時所測量之接觸角,且已知此通常在模擬液滴於動態狀態 下的移動率上有用。以簡單的方式來說,該後退接觸角可 定義爲當從針尖噴出的端液滴登陸在基材上,然後再次將 該液滴抽入針中時’在液滴界面縮回那時的接觸角。通常 來說’該後退接觸角可藉由稱爲膨脹/收縮方法的接觸角測 量方法來測量。 該樹脂(C)對鹼性顯影劑的水解速率爲〇〇〇1奈米/秒 或更大較佳’ 0.01奈米/秒或更大更佳,01奈米/秒或更大 又更佳及1奈米/秒或更大最佳》 該樹脂(C)對鹼性顯影劑的水解速率爲單獨由該樹脂 201033732 (C)所形成的樹脂之薄膜厚度,其當在23t:下以tmah(氫 氧化四甲基銨水溶液)(2.38質量%)處理時的減少速率。 本發明之樹脂(C)爲一包含具有至少二或更多個極性 轉換基團的重覆單元(c),同時具有至少氟原子或矽原子的 任一個之樹脂(C1)較佳。 在該重覆單元(c)具有至少二個極性轉換基團之實例 中’該重覆單元(c)包括具有二個由下列式(KY-1)所表示的 極性轉換基團之部分結構較佳。附隨地,當由式(KY-1)所 〇 表示的結構不具有一鍵時,此爲一產生自移除在結構中的 至少一個任意氫原子之單價或較大價數基團。Examples of the (halo)alkyl group in Rn to Rn include an alkyl group in Zkal and a halogenated structure thereof. Examples of (per)halocycloalkyl and (per)haloaryl groups in the Rn to Rn or in the ring formed by the combination of Rf2 and Rn include a halogenation reaction derived from a cycloalkyl group in Zkal The structure is preferably a fluorocycloalkyl group represented by -C(4)F(2n_2>H and a perfluoroaryl group represented by -(:(a) 彳(1)(1), wherein the carbon number η is not particularly limited, but from 5 to 1 3 Preferably, 6 is more preferably. The ring formed by bonding at least two members of Rewl, Rew2 and Yewl to each other is preferably a cycloalkyl or heterocyclic group, and the heterocyclic group is internally-74- 201033732 Preferably, the ester ring group. Examples of the lactone ring include structures represented by the formulae (KA-ll) to (KA-1-17). Incidentally, the repeating unit (c) may have a plurality of a partial structure represented by the formula (KAH), a plurality of partial structures represented by the formula (KB-1), or a partial structure of the formula (KA-1) and a partial structure of the formula (KB-1). This partial structure of the formula (KA-1) may also be partially or completely provided as an electron withdrawing group of Y1 or Y2 in the formula (KB-1). For example, X in the formula (KA-1) a carboxylate group Wherein, the carboxylate group can be used as an electron withdrawing group of Y1 or Y2 in the formula (KB-1). The repeating unit (c) can be a repeating unit (c'), which is One side of the chain having at least one of a fluorine atom or a ruthenium atom and a polar conversion group; a repeating unit (C*) having a polar conversion group and having no fluorine atom or ruthenium atom: or a repetitive unit (C" ) having a polarity-switching group on one side chain while having at least one of fluorine atoms or germanium atoms in the side chain of the different side chain in the same repeating unit, but the resin (C) includes heavy The covering unit (c') is preferable as the repeating unit (c). That is, it is preferable that the repeating unit having at least Q-polarity-switching groups (the fluorene has at least one of a fluorine atom or a germanium atom). In the example where the resin (C) includes the repeating unit (c*), the resin is a repeating unit (repeating unit (cl) described later) containing any one having at least a fluorine atom or a ruthenium atom. The copolymer is preferred. Similarly, in the repeating unit (c", the polarity conversion The side chain of the group and the side chain having at least one of fluorine atoms or germanium atoms are bonded to the same carbon atom in the main chain, that is, have a positional relationship of the following formula (K1). Wherein Β1 represents a partial structure having a polar converting group and 201033732 B2 represents a partial structure having at least one of a fluorine atom or a ruthenium atom. B1 才,七(K1) B2 Similarly, in the repeating unit (C In the *) and repeating unit (C"), the polarity converting group is preferably a partial structure represented by -COO- in the structure of the formula (KA-I). The polar conversion group is decomposed by the action of an alkali developer to achieve a polar conversion, whereby the receding contact angle of the resin composition film with water after alkali development can be reduced. The resin composition film has a receding contact angle with water of 50° or less after alkali development, at a temperature during exposure (usually at room temperature of 23±3° C.) and a humidity of 45±5%. , 4 (Τ or smaller is better, 35° or smaller and better and 30° or smaller is the best. The receding contact angle is the contact measured when the contact line on the droplet-substrate interface is retracted. Angle, and it is known that this is generally useful in simulating the mobility of droplets in a dynamic state. In a simple manner, the receding contact angle can be defined as when the droplets ejected from the tip of the needle land on the substrate, then When the droplet is drawn into the needle again, the contact angle at the time of the droplet interface is retracted. Generally, the receding contact angle can be measured by a contact angle measuring method called an expansion/contraction method. (C) The hydrolysis rate to the alkaline developer is 〇〇〇1 nm/sec or more, preferably 0.01 nm/sec or more, 01 nm/sec or more and more preferably 1 Best for nano/second or larger. The hydrolysis rate of the resin (C) to the alkaline developer is a resin formed by the resin 201033732 (C) alone. Film thickness, which is a rate of reduction when treated with tmah (aqueous solution of tetramethylammonium hydroxide) (2.38 mass%) at 23t: The resin (C) of the present invention contains one having at least two or more polarity transitions The repeating unit (c) of the group, preferably a resin (C1) having at least one of a fluorine atom or a ruthenium atom, is preferred in the case where the repeating unit (c) has at least two polarity-switching groups. The repeating unit (c) preferably has a partial structure having two polarity converting groups represented by the following formula (KY-1). Incidentally, when the structure represented by the formula (KY-1) does not have one In the case of a bond, this is a monovalent or larger valence group resulting from the removal of at least one arbitrary hydrogen atom in the structure.
在式(KY-1)中,Rkyl及Rky4各者各自獨立地代表氫原 子、鹵素原子、烷基、環烷基、羰基、羰氧基、氧基羰基、 醚基團、羥基、氰基、醯胺基團或芳基。再者,Rkyl及Rky4 可鍵結至相同原子以形成雙鍵。例如,Rkyl及Rky4可鍵結 至相同氧原子以形成羰基的一部分( = 0) »In the formula (KY-1), each of Rkyl and Rky4 independently represents a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, a carbonyloxy group, an oxycarbonyl group, an ether group, a hydroxyl group, a cyano group, Amidoxime group or aryl group. Furthermore, Rkyl and Rky4 can be bonded to the same atom to form a double bond. For example, Rkyl and Rky4 can be bonded to the same oxygen atom to form part of the carbonyl group (= 0) »
Rky2及Rky3各者各自獨立地代表吸電子基團,或當 Rkyl與Rky2結合以形成一內酯環時,Rky3爲吸電子基團。 所形成的內酯環爲(KA-1-1)至(KA-1-17)之結構較佳。該吸 電子基團的實施例與在式(KB-1)中的那些Y1及Y2相同, 且鹵素原子及由- C(Rfl)(Rf2)-Rf3所表示的鹵(環)烷基或鹵 芳基較佳。在較佳的具體實例中,Rky3爲鹵素原子或由 -C(Rfl)(Rf2)-Rf3所表示的鹵(環)烷基或鹵芳基,及Rky2與 f-tm -II- 201033732Each of Rky2 and Rky3 independently represents an electron withdrawing group, or when Rkyl is combined with Rky2 to form a lactone ring, Rky3 is an electron withdrawing group. The lactone ring formed is preferably a structure of (KA-1-1) to (KA-1-17). Examples of the electron withdrawing group are the same as those of Y1 and Y2 in the formula (KB-1), and a halogen atom and a halogen (cyclo)alkyl group or a halogen represented by -C(Rfl)(Rf2)-Rf3 The aryl group is preferred. In a preferred embodiment, Rky3 is a halogen atom or a halo(cyclo)alkyl or haloaryl group represented by -C(Rfl)(Rf2)-Rf3, and Rky2 and f-tm-II-201033732
Rkyl結合以形成一內酯環或爲不包含鹵素原子的吸電子基 團。Rkyl combines to form a lactone ring or an electron withdrawing group which does not contain a halogen atom.
Rkyl、Rky2及1^^可彼此結合以形成單環或多環結構。Rkyl, Rky2 and 1^^ may be bonded to each other to form a monocyclic or polycyclic structure.
Rkyl及Rky4的特定實施例包括與對在式(KA-1)中的 Zkal那些相同之基團。 藉由結合尺…與Rky2所形成的內酯環爲(KA-1-1)至 (KA-1-17)之結構較佳。該吸電子基團的實施例與在式 (KB-1)中的那些Y1及Y2相同。 由式(KY-1)所表示的結構爲由下列式(KY-2)所表示之 結構較佳。於此,由式(KY-2)所表示的結構爲一產生自移 除在結構中的至少一個任意氫原子之單價或較大價數基 團。Specific examples of Rkyl and Rky4 include the same groups as those of Zkal in formula (KA-1). The structure in which the lactone ring formed by combining the ruthenium and Rky2 is (KA-1-1) to (KA-1-17) is preferable. The examples of the electron withdrawing group are the same as those of Y1 and Y2 in the formula (KB-1). The structure represented by the formula (KY-1) is preferably a structure represented by the following formula (KY-2). Here, the structure represented by the formula (KY-2) is a monovalent or larger valence group which generates at least one arbitrary hydrogen atom removed from the structure.
在式(KY-2)中,Rky6至Rkyio各者各自獨立地代表氫原 子、_素原子、院基、環院基、幾基、羯氧基、氧基幾基、 醚基團、羥基、氰基、醯胺基團或芳基。In the formula (KY-2), each of Rky6 to Rkyio independently represents a hydrogen atom, a _ atom, a group, a ring group, a aryl group, a decyloxy group, an oxy group, an ether group, a hydroxyl group, A cyano group, a guanamine group or an aryl group.
Rky 6至Rkyl 0之二或更多個成員可彼此結合以形成單 環或多環結構。Two or more members of Rky 6 to Rkyl 0 may be bonded to each other to form a monocyclic or polycyclic structure.
Rky5代表吸電子基團。該吸電子基團的實施例與那些 Y1及Y2相同,且鹵素原子及由-C(Rn)(Rn)-Rf3所表示的 鹵(環)烷基或鹵芳基較佳。Rky5 represents an electron withdrawing group. The examples of the electron withdrawing group are the same as those of Y1 and Y2, and a halogen atom and a halogen (cyclo)alkyl group or a halogen aryl group represented by -C(Rn)(Rn)-Rf3 are preferred.
Rky5至RkylO的特定實施例包括與對在式(KA-1)中的 201033732 zkal那些相同之基團。 由式(KY-2)所表示的結構爲由下列式(κγ_3)所表示的 部分結構較佳。Specific examples of Rky5 to RkylO include the same groups as those of 201033732 zkal in formula (KA-1). The structure represented by the formula (KY-2) is preferably a partial structure represented by the following formula (κγ_3).
在式(ΚΥ-3)中’ Zkal及nka具有與在式(ΚΑ-1)中相同 的意義。Rky5具有與在式(KY-2)中相同的意義。In the formula (ΚΥ-3), 'Zkal and nka have the same meanings as in the formula (ΚΑ-1). Rky5 has the same meaning as in the formula (KY-2).
Lky代表伸院基、氧原子或硫原子。該Lky的伸院基之 實施例包括亞甲基及伸乙基。Lky爲氧原子或亞甲基較佳, 亞甲基更佳。 該重覆單元(C)無限制,只要其爲藉由聚合(諸如加成聚 合、縮合聚合及加成縮合)所獲得的重覆單元,但是藉由碳 -碳雙鍵之加成聚合所獲得的重覆單元較佳。其實施例包括 以丙烯酸酯爲基礎的重覆單元(包括在α -或β -位置處具有 取代基之系統)、以苯乙烯爲基礎的重覆單元(包括在(X-或β-0 位置處具有取代基之系統)、以乙烯基醚爲基礎的重覆單 元、以降萡烯爲基礎的重覆單元、及馬來酸衍生物(例如, 馬來酸酐或其衍生物、馬來醯亞胺)重覆單元。以丙烯酸酯 爲基礎的重覆單元、以苯乙烯爲基礎的重覆單元、以乙烯 基醚爲基礎的重覆單元及以降萡烯爲基礎的重覆單元較 佳,且以丙烯酸酯爲基礎的重覆單元、以乙烯基醚爲基礎 的重覆單元及以降萡烯爲基礎的重覆單元更佳,及以丙烯 酸酯爲基礎的重覆單元最佳。 至於該重覆單元(C)的更特定結構’具有顯示在下列的 -79 - 201033732 部分結構之重覆單元較佳。 該重覆單元(C)可爲具有顯示在下列的部分結構之重 覆單元。Lky stands for a base, an oxygen atom or a sulfur atom. Examples of the Lky's extended base include methylene and ethyl. Lky is preferably an oxygen atom or a methylene group, and a methylene group is more preferred. The repeating unit (C) is not limited as long as it is a rectifying unit obtained by polymerization (such as addition polymerization, condensation polymerization, and addition condensation), but is obtained by addition polymerization of a carbon-carbon double bond. The repeating unit is preferred. Examples thereof include an acrylate-based repeating unit (including a system having a substituent at an α- or β-position), a styrene-based repeating unit (including at (X- or β-0 position) a system having a substituent), a vinyl ether-based repeating unit, a decene-based repeating unit, and a maleic acid derivative (for example, maleic anhydride or a derivative thereof, Malayanya) An amine) repeating unit, an acrylate-based repeating unit, a styrene-based repeating unit, a vinyl ether-based repeating unit, and a decene-based repeating unit are preferred, and An acrylate-based repeating unit, a vinyl ether-based repeating unit, and a decene-based repeating unit are preferred, and an acrylate-based repeating unit is preferred. The more specific structure of the unit (C) is preferably a repeating unit having a partial structure shown in the following -79 - 201033732. The repeating unit (C) may be a repeating unit having a partial structure shown below.
在式(CC)中,Z!代表(當存在有複數個21時,各者各自 獨立地代表)單鍵、醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵或 尿素鍵,且酯鍵較佳。 Z2代表(當存在有複數個Z2時,各者各自獨立地代表) 鏈或環狀伸烷基,且具有碳數1或2的伸烷基或具有碳數 5至10的伸環烷基較佳。 每個Ta各自獨立地代表烷基、環烷基、烷氧基、腈基 團、羥基、醯胺基團、芳基或吸電子基團(具有與在式(KB-1) 中的Y1及Y2吸電子基團相同之意義),且烷基、環烷基或 吸電子基團較佳,吸電子基團更佳。當存在有複數個Ta 時,該等Ta可彼此結合以形成一環。 L〇代表單鍵或(m+1)價烴基團(具有碳數20或較少較 佳)且單鍵較佳。當m爲1時,形成單鍵作爲L〇。該作爲 L 〇的(m+ 1 )價烴基團代表藉由從例如伸烷基、伸環烷基、伸 苯基或其組合移除m-Ι個任意氫原子所形成的(m+i)價烴 基團。 每個L各自獨立地代表羰基、羰氧基或醚基團。In the formula (CC), Z! represents (when there are a plurality of 21, each of which is independently represented by a single bond, an ether bond, an ester bond, a guanamine bond, a urethane bond or a urea bond), and The ester bond is preferred. Z2 represents (when a plurality of Z2 are present, each independently represents a chain or a cyclic alkyl group, and has an alkylene group having 1 or 2 carbon atoms or a cycloalkyl group having a carbon number of 5 to 10) good. Each Ta independently represents an alkyl group, a cycloalkyl group, an alkoxy group, a nitrile group, a hydroxyl group, a guanamine group, an aryl group or an electron withdrawing group (having a Y1 in the formula (KB-1) and The Y2 electron withdrawing group has the same meaning), and an alkyl group, a cycloalkyl group or an electron withdrawing group is preferred, and an electron withdrawing group is more preferable. When there are a plurality of Tas, the Tas may be combined with each other to form a ring. L〇 represents a single bond or a (m+1)-valent hydrocarbon group (having a carbon number of 20 or less) and a single bond is preferred. When m is 1, a single bond is formed as L〇. The (m+1) valent hydrocarbon group as L 代表 represents (m+i) valence formed by removing m-Ι arbitrary hydrogen atoms from, for example, an alkyl group, a cycloalkyl group, a phenyl group, or a combination thereof. Hydrocarbon group. Each L independently represents a carbonyl, carbonyloxy or ether group.
Tc代表氫原子、烷基、環烷基、腈基團、羥基、醯胺 基團、芳基或吸電子基團(具有與在式(KB-1)中之γΐ及γ2 吸電子基團相同的意義)。 -80- 201033732 *代表對樹脂的主或側鏈之鍵結。也就是說,由式(cc) 所表示的部分結構可直接鍵結至主鏈,或由式(CC)所表示 的部分結構可鍵結至樹脂側鏈。附隨地,對主鏈的鍵結爲 對存在於形成該主鏈的鍵結中之原子的鍵結,及對側鏈的 鍵結爲對存在於除了用來鍵結構成主鏈外之部分中的原子 之鍵結。 m代表整數1至28及爲整數1至3較佳,1更佳。 k代表整數0至2,且1較佳。 〇Tc represents a hydrogen atom, an alkyl group, a cycloalkyl group, a nitrile group, a hydroxyl group, a guanamine group, an aryl group or an electron withdrawing group (having the same γ ΐ and γ 2 electron withdrawing groups in the formula (KB-1) Meaning). -80- 201033732 * represents the bond to the main or side chain of the resin. That is, a partial structure represented by the formula (cc) may be directly bonded to the main chain, or a partial structure represented by the formula (CC) may be bonded to the resin side chain. Incidentally, the bond to the main chain is a bond to an atom existing in a bond forming the main chain, and the bond of the opposite side chain exists in a portion other than the main structure for the bond structure. The bond of the atom. m represents an integer of 1 to 28 and is preferably an integer of 1 to 3, more preferably 1. k represents an integer of 0 to 2, and 1 is preferred. 〇
q爲基團(Z2-Z〇的重覆數目及代表整數0至5,且從0 至2較佳。 r代表整數〇至5。 代替-(L)r-Tc,上述描述的-L〇-(Ta)m可經取代。 在糖內酯終端處具有氟原子或在相同重覆單元(重覆 單元(c"))內與在糖內酯邊上的側鏈不同之側鏈上具有氟原 子亦較佳。 該作爲Z2之鏈伸烷基的碳數在線性伸烷基之實例中 從1至30較佳,從1至20更佳;及在分支伸烷基的實例 中,從3至30較佳,從3至20更佳。該作爲R2的鏈伸烷 基之特定實施例包括一產生自在如上述Zkal的烷基之特定 實施例中移除一個任意氫原子的基團。 該作爲Z2的環狀伸烷基爲具有3至8的環狀伸烷基較 佳,及其特定實施例包括一產生自在如上述Zkal的環烷基 中移除一個任意氫原子的基團。 該作爲Ta及Tc的烷基及環烷基之較佳碳數及特定實 施例與上述對作爲Zkal的烷基及環烷基之那些描述相同。 η 1 • 01 - 201033732 該作爲Ta的烷氧基爲具有碳數1至8的烷氧基較佳, 及其實施例包括甲氧基、乙氧基、丙氧基及丁氧基。 該作爲Ta及Tc的芳基爲具有碳數6至12的芳基較 佳,及其實施例包括苯基及萘基。 該作爲LQ的伸烷基及伸環烷基之較佳碳數及特定實 施例與上述對作爲冗2的鏈伸烷基及環狀伸烷基之那些描述 相同。q is a group (the number of repetitions of Z2-Z〇 and represents an integer of 0 to 5, and preferably from 0 to 2. r represents an integer 〇 to 5. instead of -(L)r-Tc, -L described above 〇-(Ta)m may be substituted. There is a fluorine atom at the terminal of the lactone or a side chain different from the side chain on the sugar lactone side in the same repeating unit (c") It is also preferred to have a fluorine atom. The carbon number of the alkyl group as Z2 is preferably from 1 to 30, more preferably from 1 to 20, in the case of a linear alkyl group; and in the case of a branched alkyl group, More preferably from 3 to 30, more preferably from 3 to 20. A specific embodiment of the alkylene group as R2 comprises a group derived from the removal of an arbitrary hydrogen atom in a particular embodiment of an alkyl group such as Zkal described above. The cyclic alkyl group as Z2 is preferably a cyclic alkyl group having 3 to 8, and specific examples thereof include a group derived from the removal of an arbitrary hydrogen atom from a cycloalkyl group such as Zkal described above. The preferred carbon number of the alkyl group and the cycloalkyl group as Ta and Tc and the specific examples are the same as those described above for the alkyl group and the cycloalkyl group as Zkal. η 1 • 01 - 201033732 The alkoxy group as Ta is preferably an alkoxy group having 1 to 8 carbon atoms, and examples thereof include a methoxy group, an ethoxy group, a propoxy group and a butoxy group. The aryl group as Ta and Tc is The aryl group having 6 to 12 carbon atoms is preferred, and examples thereof include a phenyl group and a naphthyl group. The preferred carbon number of the alkylene group and the extended cycloalkyl group as LQ and the specific examples and the above pair are used as redundant 2 The descriptions of the alkyl and cyclic alkyl groups are the same.
至於該重覆單元(〇的更特定結構,具有顯示在下列的 部分結構之重覆單元較佳。As for the repetitive unit (the more specific structure of the crucible, the repetitive unit having the partial structure shown below is preferable.
(ca-2) (Ta)m(ca-2) (Ta)m
在式(ca-2)及(cb-2)中,η代表整數0至11及爲整數0 至5較佳,1或2更佳。 Ρ代表整數〇至5及爲整數0至3較佳,1或2更佳。In the formulae (ca-2) and (cb-2), η represents an integer of 0 to 11 and an integer of 0 to 5 is preferable, and 1 or 2 is more preferable. Ρ represents an integer 〇 to 5 and an integer of 0 to 3 is preferred, and 1 or 2 is more preferred.
每個Tb各自獨立地代表烷基、環烷基、烷氧基、腈基 團、羥基、醯胺基團、芳基或吸電子基團(具有與在式(KB-1) 中之Y1及Y2吸電子基團相同的意義),且烷基、環烷基或 吸電子基團較佳。當存在有複數個Tb時,Tb可彼此結合 以形成一環。 *代表一對該樹脂的主或側鏈之鍵結。也就是說,由式 (ca-2)或(cb-2)所表示的部分結構可直接鍵結至主鏈,或由 式(ca-2)或(cb-2)所表示的部分結構可鍵結至樹脂的側鏈。Each Tb independently represents an alkyl group, a cycloalkyl group, an alkoxy group, a nitrile group, a hydroxyl group, a guanamine group, an aryl group or an electron withdrawing group (having a Y1 in the formula (KB-1) and The Y2 electron withdrawing group has the same meaning), and an alkyl group, a cycloalkyl group or an electron withdrawing group is preferred. When there are a plurality of Tbs, Tb can be combined with each other to form a ring. * represents a pair of primary or side chain bonds of the resin. That is, a partial structure represented by the formula (ca-2) or (cb-2) may be directly bonded to the main chain, or a partial structure represented by the formula (ca-2) or (cb-2) may be Bonded to the side chain of the resin.
Zi、Z2、Ta、Tc、L、*、m、q 及 r 具有與在式(cc)中 的那些相同之意義,及較佳具體實例亦相同。 -82- 201033732Zi, Z2, Ta, Tc, L, *, m, q and r have the same meanings as those in the formula (cc), and the preferred specific examples are also the same. -82- 201033732
在式(KY-4)中,R2代表鏈或環狀伸烷基,且當存在有 複數個R2時,每個R2可與每個其它R2相同或不同。 R·3代表在構成碳上的部分或全部氫原子由氟原子置換 之線性、分支或環狀烴基團。 0 R4代表鹵素原子、氰基、羥基、醯胺基團、院基、環 院基、院氧基、苯基、醯基、院氧基幾基或由R_C( = (:))或 R-C ( = 0)0-所表示的基團(其中R代表烷基或環烷基)。當存 在有複數個R·4時,每個R4可與每個其它R4相同或不同, 及二或更多個r4可結合以形成一環。 X代表伸烷基、氧原子或硫原子。 Z及Za各者代表(當存在有複數個Z或Za時,z或Za 各者各自獨立地代表)單鍵、醚鍵、酯鍵、醯胺鍵、胺基甲 0 酸酯鍵或尿素鍵,及當存在有複數個Z或Za時,Z或Za 各者可與每個其它Z或Za相同或不同。 *代表一對該樹脂的主或側鏈之鍵結。 〇爲取代基數目及代表整數1至7。 m爲取代基數目及代表整數〇至7。 η爲重覆數目及代表整數〇至5。 -R^Z-之結構爲由- (CH^-COO-所表示的結構(其中1 代表整數1至5)較佳。 該作爲R2的鏈或環狀伸烷基之較佳碳數範圍及特定 -83- 201033732 實施例與對在式(cc)的Z2中之鏈伸烷基及環狀伸烷基的那 些描述相同。 該作爲R3的線性、分支或環狀烴基團之碳數在線性烴 基團的實例中從1至30較佳,從1至20更佳·,在分支烴 基團的實例中,從3至30較佳,從3至20更佳;及在環 狀烴基團的實例中,從6至20。R3的特定實施例包括如上 述Zkal的烷基及環烷基之特定實施例。In the formula (KY-4), R2 represents a chain or a cyclic alkyl group, and when a plurality of R2 are present, each R2 may be the same as or different from each other R2. R·3 represents a linear, branched or cyclic hydrocarbon group in which part or all of hydrogen atoms constituting the carbon are replaced by fluorine atoms. 0 R4 represents a halogen atom, a cyano group, a hydroxyl group, a guanamine group, a hospital group, a ring-based group, an alkoxy group, a phenyl group, a fluorenyl group, an alkoxy group or a R_C(=(:)) or RC ( = 0) a group represented by 0- (wherein R represents an alkyl group or a cycloalkyl group). When there are a plurality of R·4, each R4 may be the same as or different from each other R4, and two or more r4 may be combined to form a ring. X represents an alkyl group, an oxygen atom or a sulfur atom. Representative of Z and Za (when there are a plurality of Z or Za, each of z or Za is independently represented by a single bond, an ether bond, an ester bond, a guanamine bond, an amine formmate bond or a urea bond) And when there are a plurality of Z or Za, each of Z or Za may be the same or different from each other Z or Za. * represents a pair of primary or side chain bonds of the resin. 〇 is the number of substituents and represents the integer 1 to 7. m is the number of substituents and represents an integer 〇 to 7. η is the number of repetitions and represents an integer 〇 to 5. The structure of -R^Z- is preferably a structure represented by -(CH^-COO- (wherein 1 represents an integer of 1 to 5). The preferred carbon number range of the chain or cyclic alkyl group as R2 and Specific -83-201033732 The examples are the same as those described for the alkyl and cyclic alkyl groups in Z2 of formula (cc). The carbon number of the linear, branched or cyclic hydrocarbon group as R3 is linear. In the examples of the hydrocarbon group, it is preferably from 1 to 30, more preferably from 1 to 20, more preferably from 3 to 30, more preferably from 3 to 20 in the case of branched hydrocarbon groups; and an example of a cyclic hydrocarbon group. In particular, from 6 to 20. Specific examples of R3 include specific embodiments of alkyl and cycloalkyl groups as described above for Zkal.
該作爲R4及R的烷基及環烷基之較佳碳數及特定實施 例與上述對作爲Zkal的烷基及環烷基之那些描述相同。 該作爲R4的醯基爲具有碳數1至6的醯基較佳,及其 實施例包括甲醯基、乙醯基、丙醯基、丁醯基、異丁醯基、 戊醯基及特戊醯基。 在作爲R4的烷氧基及烷氧基羰基中之烷基部分的實 施例包括線性、分支或環烷基部分,及該烷基部分的較佳 碳數及特定實施例與上述對作爲Zkal的烷基及環烷基之那 些描述相同。The preferred carbon number and specific examples of the alkyl group and the cycloalkyl group as R4 and R are the same as those described above for the alkyl group and the cycloalkyl group as Zkal. The fluorenyl group as R4 is preferably a fluorenyl group having 1 to 6 carbon atoms, and examples thereof include a fluorenyl group, an ethyl fluorenyl group, a propyl fluorenyl group, a butyl group, an isobutyl group, a amyl group and a pentamidine group. Examples of the alkyl moiety in the alkoxy and alkoxycarbonyl groups as R4 include linear, branched or cyclic alkyl moieties, and the preferred carbon number of the alkyl moiety and the specific examples and pairs described above as Zkal Those descriptions of alkyl and cycloalkyl are the same.
該作爲X的伸烷基之實施例包括鏈或環狀伸烷基,及 其較佳碳數及特定實施例與對作爲R2的鏈伸烷基及環狀 伸烷基之那些描述相同》 具有由式(KY-5)所表示的部分結構之重覆單元更佳。Examples of the alkylene group as X include a chain or a cyclic alkyl group, and preferred carbon numbers thereof and specific examples are the same as those described for the chain alkyl group and the cyclic alkyl group as R2. The repeating unit of the partial structure represented by the formula (KY-5) is more preferable.
(KY-5) 在式(KY-5)中,R2代表鏈或環狀伸烷基及當存在有複 -84-(KY-5) In the formula (KY-5), R2 represents a chain or a cyclic alkyl group and when a complex is present - 84-
201033732 數個R2時,每個Rz可與每個其它r2相同或不 代表在構成碳上的部分或全部氫原子由 之線性、分支或環狀烴基團。 以代表鹵素原子、氰基、羥基、醯胺基團 烷基、烷氧基、苯基、醯基、烷氧基羰基或由 R-C(=0)0-所表示的基團(其中R代表烷基或環 在有複數個R4時,每個R4可與每個其它1^4相 及二或更多個R4可結合以形成一環。 X代表伸烷基、氧原子或硫原子。 Z代表單鍵、醚鍵、酯鍵、醯胺鍵、胺基 尿素鍵,及當存在有複數個Z時,每個Z可與 相同或不同。 *代表對該樹脂的主或側鏈之鍵結。 η爲重覆數目及代表整數〇至5。 m爲取代基數目及代表整數〇至7。 在心至FU及X中的較佳碳數範圍及特定 式(KY-4)中所描述的那些相同。 -R2-Z-的結構爲由-(CHzh-COO-所表示之; 代表整數1至5)較佳。201033732 For several R2, each Rz may be the same as each other r2 or does not represent a linear, branched or cyclic hydrocarbon group from some or all of the hydrogen atoms constituting the carbon. a group represented by a halogen atom, a cyano group, a hydroxyl group, a decyl group alkyl group, an alkoxy group, a phenyl group, a fluorenyl group, an alkoxycarbonyl group or a group represented by RC(=0)0- (wherein R represents an alkane When the ring or ring has a plurality of R4, each R4 may be combined with each other 1^4 phase and two or more R4 to form a ring. X represents an alkylene group, an oxygen atom or a sulfur atom. A bond, an ether bond, an ester bond, a guanamine bond, an amine urea bond, and when a plurality of Z are present, each Z may be the same or different. * represents a bond to the main or side chain of the resin. The number of repeats and the integer 〇 to 5. m is the number of substituents and represents an integer 〇 to 7. The preferred range of carbon numbers in the heart to FU and X and those described in the specific formula (KY-4) The structure of -R2-Z- is preferably represented by -(CHzh-COO-; representing integers 1 to 5).
*—X'-A-O-C-X * -X'-A-C-O-X*—X'-A-O-C-X * -X'-A-C-O-X
II II 〇 (rf-1) 〇 (rf-2) 在式(rf-1)及(rf-2)中,X,代表吸電子取代 基、氧基羰基、經氟原子取代的伸烷基或經氟 伸環烷基較佳。 A代表單鍵或由-C(RX)(Ry)-所表示的二價 同。 氟原子置換 、烷基、環 R-C( = 0)-或 院基)。當存 同或不同,II II 〇(rf-1) 〇(rf-2) In the formulae (rf-1) and (rf-2), X represents an electron withdrawing substituent, an oxycarbonyl group, an alkyl group substituted by a fluorine atom or It is preferred to extend the cycloalkyl group through fluorine. A represents a single bond or a divalent same as represented by -C(RX)(Ry)-. Fluorine atom substitution, alkyl group, ring R-C (= 0)- or hospital base). When they are different or different,
甲酸酯鍵或 每個其它Z 實施例與在 吉構(其中1 基,且羰氧 原子取代的 連結基團, -85- 201033732 其中Rx及Ry各者各自獨立地代表氫原子、氟原子、烷基 (其碳數爲1至6較佳,及其可由氟原子或其類似原子取代) 或環烷基(其碳數爲5至12較佳,及其可由氟原子或其類 似原子取代)。Rx及Ry各者爲氫原子、烷基或經氟原子取 代的烷基較佳。 X代表吸電子基團,且氟化烷基、氟化環烷基、由氟 或氟化烷基取代的芳基或由氟或氟化烷基取代的芳烷基較 佳。 *代表對該樹脂的主或側鏈之鍵結,也就是說,經由單 鍵或連結基團鍵結至該樹脂的主鏈之鍵結。 當X’爲羰氧基或氧基羰基時,A不爲單鍵。 在該作爲X’之經氟原子取代的伸烷基中之伸烷基的碳 數在線性伸烷基的實例中,從1至30較佳,從1至20更 佳;及在分支伸烷基的實例中,從3至30較佳,從3至 20更佳。該伸烷基的特定實施例包括一產生自在如上述 Zkal的烷基之特定實施例中移除一個任意氫原子的基團。 該經氟原子取代的伸烷基爲伸全氟烷基較佳。 在該作爲X ’之經氟原子取代的伸環烷基中之伸環烷基 爲具有碳數3至8的伸環烷基較佳,及其特定實施例包括 一產生自在如上述Zkal的環烷基之特定實施例中移除一個 任意氫原子的基團。該經氟原子取代的伸環烷基爲伸全氟 環院基較佳。 在該作爲X的氟化烷基中之烷基的碳數在線性烷基之 實例中從1至30較佳’從1至更佳;及在分支院基的 實例中,從3至30較佳,從3至20更佳。該烷基的特定 -86- 201033732 實施例包括如上述zkal的烷基之特定實施例。該氟化烷基 爲全氟烷基較佳。 在該作爲X的氟化環烷基中之環烷基爲具有碳數3至 8的環烷基較佳,及其特定實施例包括如上述Zkal的環烷 基之特定實施例。該氟化環烷基爲全氟環烷基較佳。 在該作爲X由氟或氟化烷基取代的芳基中之芳基爲具 有碳數6至12的芳基較佳,及其實施例包括苯基及萘基。 在該由氟化烷基取代的芳基中之氟化烷基的特定實施例與 Q 上述對作爲X的氟化烷基之那些描述相同。 在該作爲X由氟或氟化烷基取代的芳烷基中之烷基爲 具有碳數6至12的芳烷基較佳,及其實施例包括苄基、苯 乙基、萘基甲基、萘基乙基及萘基丁基。在由氟化烷基取 代的芳烷基中之氟化烷基的特定實施例與對該作爲X的氟 化烷基所描述之那些相同。 下列提出該具有極性轉換基團的重覆單元(c)之特定 實施例,但是本發明不限於此。 〇a formate bond or each of the other Z examples and a linking group in which a carbonyl group is substituted with a carbonyloxy atom, -85-201033732 wherein Rx and Ry each independently represent a hydrogen atom, a fluorine atom, An alkyl group (which preferably has 1 to 6 carbon atoms, and which may be substituted by a fluorine atom or the like) or a cycloalkyl group (having preferably 5 to 12 carbon atoms, and which may be substituted by a fluorine atom or the like) Rx and Ry are each preferably a hydrogen atom, an alkyl group or an alkyl group substituted by a fluorine atom. X represents an electron withdrawing group, and a fluorinated alkyl group, a fluorinated cycloalkyl group, or a fluorine or a fluorinated alkyl group is substituted. The aryl group or the aralkyl group substituted by fluorine or a fluorinated alkyl group is preferred. * represents a bond to the main or side chain of the resin, that is, bonded to the resin via a single bond or a linking group. The bond of the main chain. When X' is a carbonyloxy group or an oxycarbonyl group, A is not a single bond. The carbon number of the alkyl group in the alkylene group substituted with a fluorine atom as X' is linearly stretched. In the case of the alkyl group, it is preferably from 1 to 30, more preferably from 1 to 20; and in the case of the branched alkyl group, it is preferably from 3 to 30, more preferably from 3 to 20. Particular examples of the alkyl group include a group which is formed by removing an arbitrary hydrogen atom from a specific embodiment of the alkyl group such as Zkal described above. The fluorine-substituted alkylene group is preferably a perfluoroalkyl group. The cycloalkylene group in the cycloalkylene group substituted with a fluorine atom of X' is preferably a cycloalkyl group having a carbon number of 3 to 8, and specific examples thereof include a cycloalkane which is produced from Zkal as described above. In the particular embodiment, a group of an arbitrary hydrogen atom is removed. Preferably, the fluorine-substituted cycloalkyl group is a perfluorocyclic ring group. The alkyl group in the fluorinated alkyl group as X The carbon number is preferably from 1 to 30 in the example of the linear alkyl group from '1 to more; and in the case of the branched base group, preferably from 3 to 30, more preferably from 3 to 20. The specificity of the alkyl group. -86-201033732 The examples include specific examples of the alkyl group of zkal as described above. The fluorinated alkyl group is preferably a perfluoroalkyl group. The cycloalkyl group in the fluorinated cycloalkyl group as X has a carbon number. A cycloalkyl group of 3 to 8 is preferred, and specific examples thereof include a specific example of a cycloalkyl group such as the above Zkal. The perfluorocycloalkyl group is preferred. The aryl group in the aryl group in which X is substituted by fluorine or a fluorinated alkyl group is preferably an aryl group having a carbon number of 6 to 12, and examples thereof include a phenyl group and a naphthyl group. Specific examples of the fluorinated alkyl group in the aryl group substituted by a fluorinated alkyl group are the same as those described above for Q as a fluorinated alkyl group of X. The X is substituted by fluorine or a fluorinated alkyl group. The alkyl group in the aralkyl group is preferably an aralkyl group having a carbon number of 6 to 12, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylbutyl group. Specific examples of the fluorinated alkyl group in the aralkyl group substituted by the fluorinated alkyl group are the same as those described for the fluorinated alkyl group as X. The following repetitive unit having a polar conversion group is proposed (c a specific embodiment, but the invention is not limited thereto. 〇
Ra代表氫原子、氟原子、甲基或三氟甲基。 201033732Ra represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. 201033732
-88- 201033732-88- 201033732
-89 - 201033732-89 - 201033732
201033732201033732
r\ 1 • yi - 201033732r\ 1 • yi - 201033732
^2?· Jr^^2?· Jr^
〇丄〇 o人ο 〇、 0sfeOMe ο ΟγΟ 〇γ° 0F3 C3F7 <=3ρ7〇丄〇 o person ο 〇, 0sfeOMe ο ΟγΟ 〇γ° 0F3 C3F7 <=3ρ7
-92- 201033732-92- 201033732
201033732201033732
-94- 201033732 該樹脂(C)包括具有至少氟原子或矽原子的任一個之 重覆單元。 由於此重覆單元,該樹脂(C)不均勻地分布至從該感光 化射線或感放射線樹脂組成物所形成的薄膜之表面層,及 當該沉浸媒質爲水時,可提高在該薄膜表面上對水的後退 接觸角和沉浸液體之流動性。 該薄膜在曝光期間的溫度(通常在室溫23 ±3 °c下)及濕 度45±5 %下之後退接觸角從60至90°較佳,65°或更大更 0 佳,70°或更大又更佳,而75°或更大又更佳。 如上所述,該樹脂(C)不均勻地分布至該界面,但是不 像界面活性劑,其不需要必需地在分子中具有親水性基團 及可不促成極性/非極性物質的均句混合。 在該沉浸曝光步驟中,該沉浸液體需要隨著以高速掃 描晶圓及形成曝光圖案之曝光頭的移動在晶圓上移動。因 此,該沉浸液體與該光阻薄膜在動態狀態下的接觸角重 要,及該光阻需要具有允許液滴追隨高速掃描的曝光頭而 Q 無殘餘之性能。 該樹脂(C)具有至少氟原子或矽原子的任一個,藉此提 高在該光阻表面上之疏水性(水流動性)及減少顯影殘餘物 (浮渣)。 具有含氟原子的烷基、含氟原子的環烷基或含氟原子 的芳基作爲該含氟原子重覆單元的部分結構之重覆單元較 佳。 該含氟原子的烷基爲具有碳數1至10之線性或分支烷 基較佳,從1至4更佳,且至少一個氫原子由氟原子置換 95- 201033732 及可進一步具有其它取代基。 該含氟原子的環烷基爲具有至少一個氫原子由氟原子 置換及可進一步具有其它取代基之單環或多環的環烷基。 該含氟原子的芳基爲具有至少一個氫原子由氟原子置 換及可進一步具有其它取代基之芳基(例如,苯基、萘基)。 該含氟原子的烷基、含氟原子的環烷基及含氟原子的 芳基爲由下列式(F2)至(F4)之任何一種所表示的基團較 佳,但是本發明不限於此。-94- 201033732 The resin (C) includes a repeating unit having at least one of a fluorine atom or a ruthenium atom. Due to the repetitive unit, the resin (C) is unevenly distributed to the surface layer of the film formed from the sensitized ray or the radiation-sensitive resin composition, and when the immersion medium is water, the surface of the film can be improved The receding contact angle of the water and the fluidity of the immersion liquid. The film has a receding contact angle of preferably from 60 to 90° at a temperature during exposure (usually at room temperature of 23 ± 3 ° C) and a humidity of 45 ± 5 %, more preferably 65° or more, 70° or Bigger and better, and 75° or larger is better. As described above, the resin (C) is unevenly distributed to the interface, but unlike the surfactant, it does not necessarily have to have a hydrophilic group in the molecule and may not contribute to the uniform mixing of the polar/nonpolar substance. In the immersion exposure step, the immersion liquid needs to move on the wafer along with the movement of the exposure head that scans the wafer at high speed and forms an exposure pattern. Therefore, the contact angle of the immersion liquid with the photoresist film in a dynamic state is important, and the photoresist needs to have an exposure head which allows the droplet to follow the high-speed scanning without Q. The resin (C) has at least one of a fluorine atom or a ruthenium atom, thereby improving the hydrophobicity (water flowability) on the surface of the photoresist and reducing the development residue (scum). The aryl group having a fluorine atom-containing alkyl group, a fluorine atom-containing cycloalkyl group or a fluorine atom-containing aryl group is preferable as a repeating unit of a partial structure of the fluorine atom-containing repeating unit. The fluorine atom-containing alkyl group is preferably a linear or branched alkyl group having 1 to 10 carbon atoms, more preferably 1 to 4, and at least one hydrogen atom is replaced by a fluorine atom 95-201033732 and may further have other substituents. The fluorine atom-containing cycloalkyl group is a monocyclic or polycyclic cycloalkyl group having at least one hydrogen atom substituted by a fluorine atom and further having another substituent. The aryl group of the fluorine atom is an aryl group (e.g., phenyl group, naphthyl group) having at least one hydrogen atom which is substituted by a fluorine atom and which may further have other substituents. The fluorine atom-containing alkyl group, the fluorine atom-containing cycloalkyl group, and the fluorine atom-containing aryl group are preferably a group represented by any one of the following formulas (F2) to (F4), but the invention is not limited thereto. .
ReeRee
ReiPeo 764 R57 Ru ReaReiPeo 764 R57 Ru Rea
Rez --OH Rot 〇 ㈣㈣ CF4) 在式(F2)至(F4)中,R57至R68各者各自獨立地代表氫 原子' 氟原子或烷基(線性或分支),其限制條件爲R57至 Rei之至少一個、R62至R64之至少一個及R65至R68之至少 一個爲氟原子或具有至少一個氫原子由氟原子置換的烷基 (具有碳數1至4較佳)。Rez -OH Rot 〇 (4) (4) CF4) In the formulae (F2) to (F4), each of R57 to R68 independently represents a hydrogen atom 'fluorine atom or an alkyl group (linear or branched), and the restrictions are R57 to Rei At least one of R62 to R64 and at least one of R65 to R68 are a fluorine atom or an alkyl group having at least one hydrogen atom replaced by a fluorine atom (preferably having a carbon number of 1 to 4).
最好R57至R61及R65至R67全部爲氟原子。R62、r63 及R68各者爲氟烷基(具有碳數1至4較佳)較佳,具有碳數 1至4的全氟烷基更佳。R62及r63可彼此結合以形成—環。 R64爲氫原子較佳。 由式(F2)所表示的基團之特定實施例包括對-氟苯 基、五氟苯基及3, 5-二(三氟甲基)苯基。 由式(F3)所表示的基團之特定實施例包括三氟甲基、 五氟丙基、五氟乙基、七氟丁基、六氟異丙基、七氟異丙 -96- 201033732 基、六氟(2-甲基)異丙基、九氟丁基、八氟異丁基、九氟己 基、九氟三級丁基、全氟異戊基、全氟辛基、全氟(三甲基) 己基、2,2,3,3-四氟環丁基及全氟環己基。在這些當中,六 氟異丙基、七氟異丙基、六氟(2-甲基)異丙基、八氟異丁基、 九氟三級丁基及全氟異戊基較佳,且六氟異丙基及七氟異 丙基更佳。 由式(F4)所表示的基團之特定實施例包括 -C(CF3)2OH 、 -C(C2F5)2OH 、 _C(CF3)(CH3)OH 及 0 -CH(CF3)〇H,且-C(CF3)2OH 較佳。 該含氟的部分結構可直接鍵結至主鏈,或可經由選自 於由下列所組成之群的單獨基團或二或更多個基團之組合 鍵結至主鏈:伸烷基、伸苯基、醚基團、硫醚基團、羰基、 酯基團、醯胺基團、胺基甲酸酯基團及伸脲基。 至於該具有氟原子的重覆單元’顯示在下列的那些較 佳。 w3 (C 一 I a)Preferably, all of R57 to R61 and R65 to R67 are fluorine atoms. Each of R62, r63 and R68 is preferably a fluoroalkyl group (preferably having a carbon number of 1 to 4), and a perfluoroalkyl group having a carbon number of 1 to 4 is more preferable. R62 and r63 may be bonded to each other to form a ring. R64 is preferably a hydrogen atom. Specific examples of the group represented by the formula (F2) include p-fluorophenyl, pentafluorophenyl and 3,5-bis(trifluoromethyl)phenyl. Specific examples of the group represented by the formula (F3) include trifluoromethyl, pentafluoropropyl, pentafluoroethyl, heptafluorobutyl, hexafluoroisopropyl, heptafluoroisopropyl-96-201033732 , hexafluoro(2-methyl)isopropyl, nonafluorobutyl, octafluoroisobutyl, nonafluorohexyl, nonafluorotributyl, perfluoroisopentyl, perfluorooctyl, perfluoro(three Methyl) hexyl, 2,2,3,3-tetrafluorocyclobutyl and perfluorocyclohexyl. Among these, hexafluoroisopropyl, heptafluoroisopropyl, hexafluoro(2-methyl)isopropyl, octafluoroisobutyl, nonafluorotributyl and perfluoroisopentyl are preferred, and Hexafluoroisopropyl and heptafluoroisopropyl are preferred. Specific examples of the group represented by the formula (F4) include -C(CF3)2OH, -C(C2F5)2OH, _C(CF3)(CH3)OH, and 0-CH(CF3)〇H, and -C (CF3) 2OH is preferred. The fluorine-containing partial structure may be directly bonded to the main chain, or may be bonded to the main chain via a single group selected from the group consisting of: a combination of two or more groups: an alkyl group, A phenyl group, an ether group, a thioether group, a carbonyl group, an ester group, a guanamine group, a urethane group, and a ureido group. As for the repeating unit having a fluorine atom, those shown below are preferable. W3 (C I I a)
-^CH2-Ch)— -(·ΟΗ2-Οη)— 〇 ^ ? W5 We (c- I c) (σ- I d) 在該式中,Rio及Rii各者各自獨立地代表氫原子、氟 原子或烷基。該烷基爲具有碳數1至4的線性或分支院基 較佳及可具有取代基,及其實施例特別包括氟化的院基。 w3至w6各者各自獨立地代表具有至少一或多個氟原 子的有機基團。其特定實施例包括(F2)至(F4)的原子基團。 除了這些重覆單元外,該樹脂(c)可包括下列單元作爲 r\n -yt- 201033732 該具有氟原子的重覆單元。 Q·..^ * R5 R7 l!2 f w2 (c-ii) (c-m)-^CH2-Ch) - -(·ΟΗ2-Οη)- 〇^ ? W5 We (c- I c) (σ- I d) In the formula, each of Rio and Rii independently represents a hydrogen atom, fluorine Atom or alkyl. The alkyl group is preferably a linear or branched group having a carbon number of 1 to 4 and may have a substituent, and the embodiment thereof particularly includes a fluorinated hospital base. Each of w3 to w6 independently represents an organic group having at least one or more fluorine atoms. Specific examples thereof include atomic groups of (F2) to (F4). In addition to these repetitive units, the resin (c) may include the following unit as r\n -yt- 201033732, a repeating unit having a fluorine atom. Q·..^ * R5 R7 l!2 f w2 (c-ii) (c-m)
在該式中,R4至r7各者各自獨立地代表氫原子、氟原 子或烷基,且具有碳數1至4的線性或分支烷基較佳,及 該烷基可具有取代基。其實施例特別包括氟化的烷基。但 是,R4至R7之至少一個代表氟原子。R4與R5或R6與Κ·7 可形成一環。 ,2代表包含至少一個氟原子的有機基團。其特定實施 例包括(F2)至(F4)之原子基團。 L2代表單鍵或二價連結基團。該二價連結基團爲經取 代或未經取代的伸芳基、經取代或未經取代的伸烷基、經 取代或未經取代的伸環烷基、-〇-、-S02-、-CO-、-N(R)-(其 中R代表氫原子或烷基)、-NHS02-、或藉由結合複數個這 些基團所形成的二價連結基團。In the formula, each of R4 to r7 independently represents a hydrogen atom, a fluorine atom or an alkyl group, and a linear or branched alkyl group having 1 to 4 carbon atoms is preferable, and the alkyl group may have a substituent. Embodiments thereof specifically include a fluorinated alkyl group. However, at least one of R4 to R7 represents a fluorine atom. R4 and R5 or R6 and Κ·7 form a ring. 2 represents an organic group containing at least one fluorine atom. Specific examples thereof include atomic groups of (F2) to (F4). L2 represents a single bond or a divalent linking group. The divalent linking group is a substituted or unsubstituted extended aryl group, a substituted or unsubstituted alkylene group, a substituted or unsubstituted stretched alkyl group, -〇-, -S02-,- CO-, -N(R)- (wherein R represents a hydrogen atom or an alkyl group), -NHS02-, or a divalent linking group formed by combining a plurality of these groups.
Q代表脂環族結構。該脂環族結構可具有取代基、可 爲單環或多環及可經交聯。該單環脂環族結構爲具有碳數 3至8的環烷基較佳,及其實施例包括環戊基、環己基、 環丁基及環辛基。該多環脂環族結構的實施例包括具有雙 環、三環或四環結構及具有碳數5或更多的基團。具有碳 數6至20之環烷基較佳,及其實施例包括金剛烷基、降萡 基、二環戊基、三環癸基及四環十二烷基。附隨地,在該 環烷基中的碳原子之一部分可由雜原子(諸如氧原子)置 -98- 201033732 下列描述出該包含矽原子的重覆單元。 該包含矽原子的重覆單元包括烷基矽烷基結構(三烷 基矽烷基較佳)或環狀矽氧烷結構作爲該含矽原子的部分 結構較佳。 該烷基矽烷基結構及環狀矽氧烷結構的特定實施例包 括由下列式(CS-1)至(CS-3)所表示的基團:Q represents an alicyclic structure. The alicyclic structure may have a substituent, may be monocyclic or polycyclic, and may be crosslinked. The monocyclic alicyclic structure is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, and a cyclooctyl group. Examples of the polycyclic alicyclic structure include a group having a bicyclic, tricyclic or tetracyclic structure and having a carbon number of 5 or more. The cycloalkyl group having 6 to 20 carbon atoms is preferred, and examples thereof include adamantyl group, norbornyl group, dicyclopentyl group, tricyclodecyl group and tetracyclododecyl group. Incidentally, a part of a carbon atom in the cycloalkyl group may be placed by a hetero atom such as an oxygen atom - 98 - 201033732 The repetitive unit containing a ruthenium atom is described below. The repeating unit containing a ruthenium atom preferably has an alkyl fluorenyl structure (trialkyl decyl group) or a cyclic siloxane structure as a partial structure of the ruthenium containing atom. Specific examples of the alkyl fluorenyl structure and the cyclic oxirane structure include groups represented by the following formulae (CS-1) to (CS-3):
(CS-l) (CS-2) (CS-3)(CS-l) (CS-2) (CS-3)
II
%» 在式(CS-1)至(CS-3)中,Rlz至rZ6各者各自獨立地代 表線性或分支烷基(具有碳數1至20較佳)或環烷基(具有碳 數3至20較佳)。 L3至Ls各者代表單鍵或二價連結基團。該二價連結基 團爲選自於由下列所組成之群的單獨基團或二或更多個基 〇 團之組合:伸烷基、伸苯基、醚基團、硫醚基團、羰基、 酯基團、醯胺基團、胺基甲酸酯基團及伸脲基。 π代表整數1至5。n爲整數2至4較佳。 在該樹脂(C)中,該重覆單元(c)的含量從1〇至100莫 耳%較佳’從20至100莫耳%更佳,從3〇至1〇〇莫耳%又 更佳及從40至1〇〇莫耳%最佳,以在該樹脂(c)中的全部重 覆單元爲準。 ix重覆單兀(c )的含量從1〇至1〇〇莫耳%較佳從 至100莫耳%更佳,许 更住從3〇至100莫耳%又更佳,及從4〇至 -99- 201033732 100莫耳%最佳,以在該樹脂(c)中的全部重覆單元爲準。 該重覆單元(C*)的含量從5至70莫耳%較佳,從5至 莫耳%更佳’從1〇至50莫耳%又更佳及從1〇至4〇莫耳 °/。最佳,以在該樹脂(C)中的全部重覆單元爲準。該具有至 少氟原子或矽原子的任一個之重覆單元(其與該重覆單元 (c*)—起使用)的含量從1〇至95莫耳%較佳,從丨5至85 莫耳°/〇更佳’從20至80莫耳%又更佳及從25至75莫耳% 最佳,以在該樹脂(C)中的全部重覆單元爲準。 該重覆單元(c”)的含量從1〇至1〇〇莫耳%較佳,從2〇 至100莫耳%更佳,從30至1〇〇莫耳%又更佳及從4〇至100 〇 莫耳%最佳,以在該樹脂(C)中的全部重覆單元爲準》 在該樹脂(C)中的氟原子或矽原子可存在於樹脂主鏈 中或可取代在側鏈上。 該樹脂(C)可進一步包括具有至少氟原子或矽原子的 任一個之重覆單元(cl)’其與重覆單元(c,)及(c”)不同。 在該重覆單元(cl)中的含氟原子部分結構之實施例與 上述描述的那些相同,及由式(F2)至(F4)所表示的基團較 佳。 〇 在該重覆單元(cl)中的含矽原子部分結構之實施例與 上述描述的那些相同,及由式(CS-1)至(CS-3)所表示的基團 較佳。 該具有至少氟原子或矽原子的任—個之重覆單元(cl) 爲以(甲基)丙烯酸酯爲基礎的重覆單元較佳。%» In the formulae (CS-1) to (CS-3), each of Rlz to rZ6 independently represents a linear or branched alkyl group (having preferably a carbon number of 1 to 20) or a cycloalkyl group (having a carbon number of 3) Up to 20 is preferred). Each of L3 to Ls represents a single bond or a divalent linking group. The divalent linking group is a single group selected from the group consisting of a combination of two or more groups: an alkyl group, a phenyl group, an ether group, a thioether group, a carbonyl group. , an ester group, a guanamine group, a urethane group, and a urea group. π represents an integer of 1 to 5. It is preferable that n is an integer of 2 to 4. In the resin (C), the content of the repeating unit (c) is preferably from 1 〇 to 100 mol%, more preferably from 20 to 100 mol%, and from 3 〇 to 1 〇〇 mol% and more. The best and the best from 40 to 1 mole are based on all the repeating units in the resin (c). The content of the ix repeating unit (c) is preferably from 1 〇 to 1 〇〇 mol%, preferably from 100 摩尔%, and more preferably from 3 〇 to 100 摩尔%, and from 4 〇. To -99-201033732 100% Mox is the best, taking all the repeating units in the resin (c) as the standard. The content of the repeating unit (C*) is preferably from 5 to 70 mol%, more preferably from 5 to mol%, from 1 to 50 mol%, and more preferably from 1 to 4 mol. /. Most preferably, all of the repeating units in the resin (C) are taken as the standard. The content of the reciprocating unit having at least one of fluorine atoms or deuterium atoms (which is used together with the reciprocating unit (c*)) is preferably from 1 95 to 95 mol%, preferably from 丨5 to 85 mol. Preferably, °/〇 is from 20 to 80 mol% and more preferably from 25 to 75 mol%, which is based on all the repeating units in the resin (C). The content of the repeating unit (c") is preferably from 1 〇 to 1 〇〇 mol%, more preferably from 2 〇 to 100 摩尔%, even more preferably from 30 to 1 〇〇 mol% and from 4 〇. To 100 〇% by weight, based on all the repeating units in the resin (C). The fluorine atom or the ruthenium atom in the resin (C) may be present in the resin main chain or may be substituted on the side. The resin (C) may further comprise a repeating unit (cl) having at least one of fluorine atoms or germanium atoms, which is different from the repeating units (c,) and (c"). The examples of the fluorine atom-containing partial structure in the repeating unit (cl) are the same as those described above, and the groups represented by the formulae (F2) to (F4) are preferred. The embodiment of the structure containing the ruthenium atom in the repeating unit (cl) is the same as those described above, and the groups represented by the formulae (CS-1) to (CS-3) are preferred. It is preferred that the repeating unit (cl) having at least a fluorine atom or a ruthenium atom is a (meth) acrylate-based repeating unit.
下列提出該重覆單元(cl)的特定實施例,但是本發明 不限於此。在特定的實施例中,Xl代表氫原子、_CH3、_F -100- 201033732A specific embodiment of the repeating unit (cl) is proposed below, but the present invention is not limited thereto. In a particular embodiment, Xl represents a hydrogen atom, _CH3, _F-100-201033732
» rv -I ιυ 丄- 201033732» rv -I ιυ 丄- 201033732
f3c -102 201033732F3c -102 201033732
該樹脂(C)可進—步包括至少一個選自於下列基團(χ)The resin (C) may further comprise at least one selected from the group consisting of the following groups (χ)
及(Ζ)的基團: (X)可溶於驗的基團;及 (Ζ)能藉由酸作用分解的基團。 該可溶於鹼的基團(X)之實施例包括酚羥基、羧酸基 團、氟化的醇基團、磺酸基團、磺醯胺基團、碾基醯亞胺 基團、(烷基碾基)(烷基羰基)亞甲基、(烷基颯基)(烷基羰 基)醯亞胺基團、雙(烷基羰基)亞甲基、雙(烷基羰基)醯亞 胺基團、雙(烷基颯基)亞甲基、雙(烷基碾基)醯亞胺基團、 三(烷基羰基)亞甲基及三(烷基碾基)亞甲基。. 1 ΑΟ -丄 * 201033732 較佳可溶於鹼的基團有氟化的醇基團(六氟異丙醇較 佳)、磺醯亞胺基團及雙(羰基)亞甲基。 該具有可溶於鹼的基團(x)之重覆單元包括可溶於鹼 的基團直接鍵結至該樹脂主鏈之重覆單元(諸如,藉由丙烯 酸或甲基两烯酸的重覆單元);可溶於鹼的基團經由連結基 團鍵結至該樹脂主鏈之重覆單元;及藉由在聚合時使用含 可溶於驗的基團之聚合起始劑或鏈轉移劑,將可溶於鹼的 基團引進聚合物鏈終端之重覆單元;及這些重覆單元全部 較佳。 該具有可溶於鹼的基團(x)之重覆單元的含量從丨至50 莫耳%較佳’從3至35莫耳%更佳,從5至30莫耳%又更 佳,以在該樹脂(C)中的全部重覆單元爲準。 下列提出該具有可溶於鹼的基團(x)之重覆單元的特 定實施例’但是本發明不限於此。在特定的實施例中,Rx 代表 Η、CH3、CH2OH 或 CF3。 201033732And (Ζ) groups: (X) a group soluble in the test; and (Ζ) a group which can be decomposed by an acid action. Examples of the alkali-soluble group (X) include a phenolic hydroxyl group, a carboxylic acid group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a ruthenium imine group, Alkyl-based (alkylcarbonyl)methylene, (alkylalkyl)(alkylcarbonyl)indenylene group, bis(alkylcarbonyl)methylene, bis(alkylcarbonyl)imide a group, a bis(alkylindenyl)methylene group, a bis(alkyl ruthenium) fluorenylene group, a tri(alkylcarbonyl)methylene group, and a tris(alkyl ruthenium)methylene group. 1 ΑΟ -丄 * 201033732 Preferred base-soluble groups are fluorinated alcohol groups (preferably hexafluoroisopropanol), sulfonimide groups and bis(carbonyl)methylene groups. The repeating unit having a base-soluble group (x) includes a repeating unit in which an alkali-soluble group is directly bonded to the resin main chain (such as by weight of acrylic acid or methyl bisenoic acid) a unit that is soluble in a base, bonded to a repeating unit of the resin backbone via a linking group; and by using a polymerization initiator or chain transfer containing a soluble group during polymerization The agent, the alkali-soluble group is introduced into the repeating unit of the polymer chain terminal; and these repeating units are all preferably. The content of the repeating unit having the alkali-soluble group (x) is preferably from 丨 to 50 mol%, more preferably from 3 to 35 mol%, even more preferably from 5 to 30 mol%. All of the repeating units in the resin (C) are accurate. The specific embodiment of the repeating unit having the alkali-soluble group (x) is proposed below, but the invention is not limited thereto. In a particular embodiment, Rx represents Η, CH3, CH2OH or CF3. 201033732
-105- 201033732 該具有能藉由酸作用分解的基團(z)、包含在該樹脂(c) 中之重覆單元的實施例與具有對樹脂(A)所描述之可酸分 解的基團之那些重覆單元相同。該可酸分解的基團爲茭基 酯基團、烯醇酯基團、乙縮醛酯基團、三級烷基酯基團或 其類似基團較佳,三級烷基酯基團更佳。 該具有可酸分解的基團之重覆單元爲由下列式(CAI) 所表示的重覆單元較佳:-105- 201033732 The embodiment having a group (z) which can be decomposed by an acid action, a recoating unit contained in the resin (c), and an acid-decomposable group having a description of the resin (A) Those repeating units are the same. The acid-decomposable group is preferably a mercaptoester group, an enol ester group, an acetal ester group, a tertiary alkyl ester group or the like, and the tertiary alkyl ester group is more good. The repeating unit having an acid-decomposable group is preferably a repeating unit represented by the following formula (CAI):
Rx1 (CAI) --Rx2 在式(CAI)中,Xai代表氫原子、甲基或由-CH2-R9所 表示的基團。r9代表羥基或單價有機基團,及其實施例包 括具有碳數5或較少的烷基及醯基。該單價有機基團爲具 有碳數3或較少的烷基較佳,甲基更佳。乂&1爲氫原子、甲 基、三氟甲基或羥甲基較佳。 T代表單鍵或二價連結基團。 尺乂1至Rx3各者各自獨立地代表烷基(線性或分支)或環 烷基(單環或多環)。 出自Rxi至Rx3的二個成員可結合以形成一環烷基(單 環或多環)。 該T的二價連結基團之實施例包括伸烷基、-CO〇-Rt_ 基團及-O-Rt-基團,其中Rt代表伸烷基或伸環烷基。 T爲單鍵或- COO-Rt-基團較佳。Rt爲具有碳數1至5 -106- 201033732 的伸烷基較佳,-ch2-基團或-(ch2)3-基團更佳。 該Rx1至Rx3的烷基爲具有碳數1至4的烷基較佳’ 諸如甲基、乙基、正丙基、異丙基、正丁基、異丁基及三 級丁基。 該RXl至Rx3的環烷基爲下列較佳:單環的環烷基, 諸如環戊基及環己基;或多環的環烷基,諸如降萡基、四 環癸烷基、四環十二烷基及金剛烷基。 藉由結合出自11\1至Rx3的二個成員所形成之環烷基 Q 爲下列較佳:單環的環烷基,諸如環戊基及環己基;或多 環的環烷基,諸如降萡基、四環癸烷基、四環十二烷基及 金剛烷基,且具有碳數5至6之單環的環烷基更佳。Rx1 (CAI) - Rx2 In the formula (CAI), Xai represents a hydrogen atom, a methyl group or a group represented by -CH2-R9. R9 represents a hydroxyl group or a monovalent organic group, and examples thereof include an alkyl group having a carbon number of 5 or less and a mercapto group. The monovalent organic group is preferably an alkyl group having 3 or less carbon atoms, and more preferably a methyl group.乂&1 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. T represents a single bond or a divalent linking group. Each of the sizes 1 to Rx3 independently represents an alkyl group (linear or branched) or a cycloalkyl group (monocyclic or polycyclic). Two members from Rxi to Rx3 may be combined to form a cycloalkyl group (monocyclic or polycyclic). Examples of the divalent linking group of T include an alkylene group, a -CO〇-Rt- group, and an -O-Rt- group, wherein Rt represents an alkylene group or a cycloalkyl group. It is preferred that T is a single bond or a -COO-Rt- group. Rt is preferably an alkylene group having a carbon number of 1 to 5 - 106 to 201033732, and a -ch2- group or a -(ch2)3- group is more preferable. The alkyl group of Rx1 to Rx3 is preferably an alkyl group having a carbon number of 1 to 4, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl and tert-butyl. The cycloalkyl group of RX1 to Rx3 is preferably a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecyl group, or a tetracyclic ten group. Dialkyl and adamantyl. The cycloalkyl group Q formed by combining two members derived from 11\1 to Rx3 is preferably a monocyclic cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; or a polycyclic cycloalkyl group such as a lower A cycloalkyl group having a mercapto group, a tetracyclodecylalkyl group, a tetracyclododecyl group, and an adamantyl group, and having a monocyclic ring having 5 to 6 carbon atoms is more preferable.
Rxi爲甲基或乙基及Rx2與Rx3結合以形成上述描述的 環烷基之具體實例較佳。 這些基團各者可具有取代基,及該取代基的實施例包 括烷基(具有碳數1至4)、鹵素原子、羥基、烷氧基(具有 碳數1至4)、羧基及烷氧基羰基(具有碳數2至6)。該取代 Q 基的碳數爲8或較少較佳。 在該樹脂(C)中,該具有能藉由酸作用分解的基團(z) 之重覆單元的含量從1至80莫耳%較佳,從1〇至80莫耳 °/。更佳,從20至60莫耳%又更佳,以在該樹脂(c)中的全 部重覆單元爲準。藉由具有能藉由酸作用分解的基團(2), 可改良LWR。 該樹脂(C)可進一步包含其它重覆單元。其它重覆單元 的較佳具體實例包括下列: (cyl)具有氟原子及/或矽原子且對酸安定及略微可溶 -107 - 201033732 或不溶於鹸性顯影劑中之重覆單元; (cy2)不具有氟原子及矽原子且對酸安定及略微可溶 或不溶於鹼性顯影劑中之重覆單元; (cy3)具有氟原子及/或矽原子且具有除了上述(χ)及(z) 外之極性基團的重覆單元;及 (cy4)不具有氟原子及矽原子且具有除了上述(3〇及(2) 外之極性基團的重覆單元。 在(cyl)及(cy2)的重覆單元中之用詞"略微可溶或不溶 於驗性顯影劑"意謂著(cyl)及(Cy2)不包含可溶於鹸的基團 或能藉由酸作用或鹼性顯影劑產生可溶於鹼的基團之基團 (例如,可酸分解的基團或極性轉換基團)。 該重覆單元(cyl)及(cy2)具有不包含極性基團的脂環 烴結構較佳。 下列描述出該重覆單元(cyl)至(cy4)的較佳具體實例。 該重覆單元(cyl)及(cy2)爲由下列式(CIII)所表示的重 覆單元較佳:A specific example in which Rxi is a methyl group or an ethyl group and Rx2 is bonded to Rx3 to form a cycloalkyl group as described above is preferred. Each of these groups may have a substituent, and examples of the substituent include an alkyl group (having a carbon number of 1 to 4), a halogen atom, a hydroxyl group, an alkoxy group (having a carbon number of 1 to 4), a carboxyl group, and an alkoxy group. A carbonyl group (having a carbon number of 2 to 6). The substituted Q group has a carbon number of 8 or less. In the resin (C), the content of the repeating unit having a group (z) which can be decomposed by an acid action is preferably from 1 to 80 mol%, and is from 1 Torr to 80 mol%. More preferably, it is more preferably from 20 to 60 mol%, which is based on all the repeating units in the resin (c). The LWR can be improved by having a group (2) which can be decomposed by an acid action. The resin (C) may further comprise other resurfacing units. Preferred specific examples of other repeating units include the following: (cyl) a repeating unit having a fluorine atom and/or a ruthenium atom and which is stable to the acid and slightly soluble - 107 - 201033732 or insoluble in an inert developer; a repeating unit which does not have a fluorine atom and a halogen atom and which is stable to the acid and slightly soluble or insoluble in the alkaline developer; (cy3) has a fluorine atom and/or a germanium atom and has in addition to the above (χ) and (z) a repeating unit of a polar group; and (cy4) a repeating unit having no fluorine atom or germanium atom and having a polar group other than the above (3〇 and (2). In (cyl) and (cy2) The term "slightly soluble or insoluble in the test developer" in the repeating unit means that (cyl) and (Cy2) do not contain a group soluble in hydrazine or can be acted upon by an acid or a base. The developer produces a group of a base-soluble group (for example, an acid-decomposable group or a polar group). The repeating units (cyl) and (cy2) have an alicyclic ring containing no polar group. The hydrocarbon structure is preferred. Preferred examples of the repeating units (cyl) to (cy4) are described below. The repeating unit (cyl) (Cy2) by weight coating unit represented by the following formula (CIII) preferred:
Rc31Rc31
Lea (απ)Lea (απ)
I RC32 在式(CIII)中,Re3i代表氫原子、可由氟取代的烷基、 氰基或-CH2-0-Rac2基團,其中Rac2代表氫原子、烷基或 醯基。Rc31爲氫原子、甲基、羥甲基或三氟甲基較佳,氫 原子或甲基更佳。I RC32 In the formula (CIII), Re3i represents a hydrogen atom, an alkyl group which may be substituted by fluorine, a cyano group or a -CH2-0-Rac2 group, wherein Rac2 represents a hydrogen atom, an alkyl group or a fluorenyl group. Rc31 is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, and a hydrogen atom or a methyl group is more preferable.
Rc32代表烷基、環烷基、烯基、環烯基或芳基。這些 基團各者可例如由包含矽原子或氟原子的基團取代。 -108- 201033732Rc32 represents an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group or an aryl group. Each of these groups may be substituted, for example, by a group containing a halogen atom or a fluorine atom. -108- 201033732
Lc3代表單鍵或二價連結基團。 在式(CIII)中,該Re32的烷基爲具有碳數3至20的線 性或分支烷基較佳。 該環烷基爲具有碳數3至20的環烷基較佳。 該烯基爲具有碳數3至20的烯基較佳。 該環烯基爲具有碳數3至20的環烯基較佳。 該芳基爲具有碳數6至20的芳基較佳,諸如苯基或萘 基;及這些基團可具有取代基。Lc3 represents a single bond or a divalent linking group. In the formula (CIII), the alkyl group of Re32 is preferably a linear or branched alkyl group having 3 to 20 carbon atoms. The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms. The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms. The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms. The aryl group is preferably an aryl group having 6 to 20 carbon atoms, such as a phenyl group or a naphthyl group; and these groups may have a substituent.
Rc32爲未經取代的烷基或經氟原子取代的烷基較佳。 該L·。3之二價連結基團爲伸烷基(具有碳數1至5較佳)、氧 基、伸苯基或酯鍵(由-COO-所表示的基團)較佳。 該重覆單元(cyl)及(cy2)爲由下列式(C4)或(C5)所表 示的重覆單元較佳:Rc32 is preferably an unsubstituted alkyl group or an alkyl group substituted with a fluorine atom. The L·. The divalent linking group of 3 is preferably an alkylene group (having preferably a carbon number of 1 to 5), an oxygen group, a phenyl group or an ester bond (a group represented by -COO-). Preferably, the repeating units (cyl) and (cy2) are repeating units represented by the following formula (C4) or (C5):
❹ 在式(C4)及(C5)中’ Re5代表具有至少一個環狀結構的 烴基團且不具有羥基或氰基。❹ In the formulae (C4) and (C5), 'Re5 represents a hydrocarbon group having at least one cyclic structure and does not have a hydroxyl group or a cyano group.
Rac代表氫原子、可由氟取代的烷基、氰基或 -CHs-O-Rac2基團,其中Rac2代表氫原子、烷基或醯基。 Rac爲氫原子、甲基、羥甲基或三氟甲基較佳,氫原子或 甲基更佳。 該由Res所擁有的環狀結構包括單環烴基團及多環烴 基團。該單環烴基團之實施例包括具有碳數3至12的環烷 -109- 201033732 基及具有碳數3至12的環烯基。該單環烴基團爲具有碳數 3至7的單環烴基團較佳。 該多環烴基團包括環積聚的烴基團及交聯的環狀烴基 團。該交聯的環狀烴環之實施例包括雙環烴環、三環烴環 及四環烴環。該交聯的烴環亦包括稠和的環狀烴環(例如, 藉由稠和複數個5至8員環烷環所形成之稠環)。該交聯的 環狀烴環之較佳實施例包括降萡基及金剛烷基。 此脂環烴基團可具有取代基,及該取代基的較佳實施 例包括鹵素原子、烷基、由保護基團保護的羥基及由保護 基團保護的胺基。該鹵素原子爲溴原子、氯原子或氟原子 較佳,及該烷基爲甲基、乙基、丁基或三級丁基較佳。此 烷基可進一步具有取代基,及該烷基可進一步具有的取代 基包括鹵素原子、烷基、由保護基團保護的羥基及由保護 基團保護的胺基。 該保護基團的實施例包括烷基、環烷基、芳烷基、經 取代的甲基、經取代的乙基、烷氧基羰基及芳烷氧基羰基。 該烷基爲具有碳數1至4的烷基較佳;該經取代的甲基爲 甲氧基甲基、甲氧基硫甲基、苄氧基甲基、三級丁氧基甲 基或2-甲氧基乙氧基甲基較佳;該經取代的乙基爲1-乙氧 基乙基或1-甲基-1-甲氧基乙基較佳;該醯基爲具有碳數1 至6的脂肪族醯基較佳,諸如甲醯基、乙醯基、丙醯基、 丁醯基、異丁醯基、戊醯基及特戊醯基;及該烷氧基羰基 爲具有碳數2至4的烷氧基羰基較佳。 該Rd的烷基爲環烷基、烯基、環烯基、烷氧基羰基 或烷基羰氧基。這些基團可由氟原子或矽原子取代。 -110- 201033732 該R。6的烷基爲具有碳數1至20的線性或分支烷基較 佳,及該環烷基爲具有碳數3至20的環烷基較佳。 該烯基爲具有碳數3至20的烯基較佳。 該環烯基爲具有碳數3至20的環烯基較佳。 該烷氧基羰基爲具有碳數2至20的烷氧基羰基較佳。 該烷氧基羰基氧基爲具有碳數2至20的烷氧基羰基氧 基較佳。 η代表整數0至5。當n爲整數2或更大時,每個Rc6 0 可與每個其它Re6相同或不同。 RC6爲未經取代的烷基或由氟原子取代的烷基較佳,三 氟甲基或三級丁基更佳。 該重覆單元(cyl)及(cy2)爲由下列式(CII-AB)所表示 的重覆單元亦較佳:Rac represents a hydrogen atom, an alkyl group which may be substituted by fluorine, a cyano group or a -CHs-O-Rac2 group, wherein Rac2 represents a hydrogen atom, an alkyl group or a fluorenyl group. Rac is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, and a hydrogen atom or a methyl group is more preferable. The cyclic structure possessed by Res includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. Examples of the monocyclic hydrocarbon group include a cycloalkane-109-201033732 group having a carbon number of 3 to 12 and a cycloalkenyl group having a carbon number of 3 to 12. The monocyclic hydrocarbon group is preferably a monocyclic hydrocarbon group having 3 to 7 carbon atoms. The polycyclic hydrocarbon group includes a cyclic hydrocarbon group and a crosslinked cyclic hydrocarbon group. Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, and a tetracyclic hydrocarbon ring. The crosslinked hydrocarbon ring also includes a fused cyclic hydrocarbon ring (e.g., a fused ring formed by condensing a plurality of 5 to 8 membered cycloalkane rings). Preferred examples of the crosslinked cyclic hydrocarbon ring include a thiol group and an adamantyl group. The alicyclic hydrocarbon group may have a substituent, and preferred examples of the substituent include a halogen atom, an alkyl group, a hydroxyl group protected by a protecting group, and an amine group protected by a protecting group. The halogen atom is preferably a bromine atom, a chlorine atom or a fluorine atom, and the alkyl group is preferably a methyl group, an ethyl group, a butyl group or a tertiary butyl group. The alkyl group may further have a substituent, and the substituent which the alkyl group may further have includes a halogen atom, an alkyl group, a hydroxyl group protected by a protecting group, and an amine group protected by a protecting group. Examples of such protecting groups include alkyl groups, cycloalkyl groups, aralkyl groups, substituted methyl groups, substituted ethyl groups, alkoxycarbonyl groups, and aralkyloxycarbonyl groups. The alkyl group is preferably an alkyl group having 1 to 4 carbon atoms; the substituted methyl group is a methoxymethyl group, a methoxythiomethyl group, a benzyloxymethyl group, a tertiary butoxymethyl group or 2-methoxyethoxymethyl is preferred; the substituted ethyl group is preferably 1-ethoxyethyl or 1-methyl-1-methoxyethyl; the fluorenyl group has a carbon number 1 to 6 are preferably an aliphatic fluorenyl group such as a fluorenyl group, an ethyl fluorenyl group, a propyl fluorenyl group, a butyl fluorenyl group, an isobutyl fluorenyl group, a amyl fluorenyl group and a pentenyl group; and the alkoxycarbonyl group has a carbon number of 2 to The alkoxycarbonyl group of 4 is preferred. The alkyl group of Rd is a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkoxycarbonyl group or an alkylcarbonyloxy group. These groups may be substituted by a fluorine atom or a halogen atom. -110- 201033732 The R. The alkyl group of 6 is preferably a linear or branched alkyl group having 1 to 20 carbon atoms, and the cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms. The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms. The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms. The alkoxycarbonyl group is preferably an alkoxycarbonyl group having 2 to 20 carbon atoms. The alkoxycarbonyloxy group is preferably an alkoxycarbonyloxy group having 2 to 20 carbon atoms. η represents an integer of 0 to 5. When n is an integer of 2 or more, each Rc6 0 may be the same as or different from each other Re6. RC6 is preferably an unsubstituted alkyl group or an alkyl group substituted by a fluorine atom, and a trifluoromethyl group or a tertiary butyl group is more preferred. The repeating units (cyl) and (cy2) are also preferably the repeating unit represented by the following formula (CII-AB):
在式(CII-AB)中,Rcll’及Rcl2’各者各自獨立地代表氫 原子、氰基、鹵素原子或烷基。In the formula (CII-AB), each of Rcll' and Rcl2' independently represents a hydrogen atom, a cyano group, a halogen atom or an alkyl group.
Zc’代表用來形成包含二個鍵結的碳原子(C-C)之脂環 族結構的原子基團。 式(CII-AB)爲下列式(CII-AB1)或(CII-AB2)更佳: Λ Λ Λ -11 丄- 201033732Zc' represents an atomic group used to form an alicyclic structure of a carbon atom (C-C) containing two bonds. The formula (CII-AB) is preferably the following formula (CII-AB1) or (CII-AB2): Λ Λ Λ -11 丄- 201033732
在式(CII-AB1)及(CII-AB2)中 ’ Rcl3,至 rc16,各者各自 獨立地代表氫原子、鹵素原子、烷基或環烷基。 出自Re13’至Re 16’的至少二個成員可結合以形成一環。 η代表0或1。 下列提出(cyl)及(cy2)的特定實施例’但是本發明不限 於此。在該等式中’ Ra代表H、CH3、CH2OH、CF3或CN。In the formulae (CII-AB1) and (CII-AB2), 'Rcl3, to rc16 each independently represent a hydrogen atom, a halogen atom, an alkyl group or a cycloalkyl group. At least two members from Re13' to Re 16' may be combined to form a ring. η represents 0 or 1. Specific embodiments of (cyl) and (cy2) are presented below, but the invention is not limited thereto. In the equation, 'Ra stands for H, CH3, CH2OH, CF3 or CN.
-112- 201033732 該重覆單元(cy 3)及(cy 4)爲具有羥基或氰基作爲該極 性基團的重覆單元較佳。由於此重覆單元,對顯影劑的親 和力提高。該具有羥基或氰基的重覆單元爲具有由羥基或 氰基取代的脂環烴結構之重覆單元較佳。在該已由羥基或 氰基取代的脂環烴結構中之脂環烴結構爲金剛烷基、雙金 剛烷基或降萡基較佳。該已由羥基或氰基取代的脂環烴結 構之較佳實施例包括單羥基金剛烷基、二羥基金剛烷基、 單羥基二金剛烷基、二羥基金剛烷基及由氰基取代的降萡 ❹基 該具有此原子基團的重覆單元包括由下列式(CAIIa) 至(CAIId)所表示的重覆單元:-112- 201033732 The repeating units (cy 3) and (cy 4) are preferably a repeating unit having a hydroxyl group or a cyano group as the polar group. Due to this repetitive unit, the affinity for the developer is increased. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. The alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure which has been substituted by a hydroxyl group or a cyano group is preferably an adamantyl group, a bisadamantyl group or a norbornyl group. Preferred examples of the alicyclic hydrocarbon structure which has been substituted by a hydroxy group or a cyano group include monohydroxyadamantyl, dihydroxyadamantyl, monohydroxydiadamantyl, dihydroxyadamantyl and substituted by cyano group. The repeating unit having this atomic group includes a repeating unit represented by the following formulas (CAIIa) to (CAIId):
(CAIIa)(CAIIa)
在式(CAIIa)至(CAIId)中,RlC代表氫原子、甲基、三 氟甲基或羥甲基。 R2c至R4c各者各自獨立地代表氫原子、羥基或氰基, 其限制條件爲R2c至R4c之至少一個代表羥基或氰基。出 自R2c至R4c的一或二個成員爲羥基且剩餘爲氫原子之結 構較佳。在式(CAIIa)中,出自R2c至R4C的二個成員爲羥 基及剩餘爲氫原子更佳。 下列提出該重覆單元(cy3)及(cy4)的特定實施例,但是 本發明不限於此。 • 113 - 201033732 〇\ 〇\ 〇人免八—φ«Λι Λ 該重覆單兀(cyl)至(cy4)的含量從5至40莫耳%較 佳’從5至3〇莫耳%更佳,從1〇至25莫耳%又更佳,以 在該樹脂(C)中的全部重覆單元爲準。 該樹脂(C)可具有複數個重覆單元(cyl)至(cy4) ^ 在該樹脂(C)包含氟原子的實例中,該氟原子含量從5 至80質量°/β較佳’從10至8〇質量%更佳,以該樹脂(C)的 分子量爲準。同樣地,該含氟原子重覆單元佔有從1〇至 100質量%較佳’從30至1〇〇質量%更佳,以在該樹脂(c) 中的全部重覆單元爲準。 在該樹脂(C)包含矽原子的實例中,該矽原子含量從2 至50質量%較佳,從2至30質量%更佳,以該樹脂(C)的 分子量爲準。同樣地,該含矽原子的重覆單元佔有從10至 90質量%較佳,從20至80質量%更佳,以在該樹脂(C)中 的全部重覆單元爲準。 該樹脂(C)的標準聚苯乙烯當量平均分子量從1,000至 100,000 較佳,從 1,000 至 50,000 更佳,從 2,000 Μ 15,000 又更佳。 可藉由適當地調整其含量來使用在該感光化射線或感 放射線樹脂組成物中的樹脂(C),以提供一具有後退接觸角 在上述範圍內之感光化射線或感放射線樹脂薄膜,但是含 -114- 201033732 量從0.01至10質量%較佳’從0.1至10質量%更佳,從 〇 . 1至9質量%又更佳,而從0.5至8質量%又更佳,以該 感光化射線或感放射線樹脂組成物的全部固體含量爲準。 類似於作爲樹脂(Α)的樹脂,在該樹脂(C)中’雜質(諸 如金屬)量少當然較佳,而且同樣地,殘餘的單體或寡聚物 組分之含量從〇至10質量%較佳,從〇至5質量%更佳, 從〇至1質量%又更佳。當滿足這些條件時,可獲得一在 該液體中無外來物質或靈敏度不隨著時效改變或其類似性 0 質之光阻。同樣地,考慮到解析度、光阻外形、光阻圖案 的側壁、粗糙度及其類似性質,該分子量分布(Mw/Mn,有 時指爲"多分散性")從1至3較佳,從1至2更佳,從1至 1.8又更佳及從1至1.5最佳。 至於該樹脂(C)’可使用多種可商業購得的產物或可藉 由普通方法(例如’自由基聚合),類似於樹脂(A)般合成該 樹脂。 下列提出該樹脂(C)的特定實施例。同樣地,每種樹脂 Q 之重覆單元(與從左邊開始的重覆單元相應)之莫耳比率、 重量平均分子量(Mw)及多分散性(Mw/Mn)顯示在之後表1 中 。 1 1 r -11J - 201033732In the formulae (CAIIa) to (CAIId), R1C represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. Each of R2c to R4c independently represents a hydrogen atom, a hydroxyl group or a cyano group, with the proviso that at least one of R2c to R4c represents a hydroxyl group or a cyano group. The structure from which one or two members of R2c to R4c are a hydroxyl group and the remainder is a hydrogen atom is preferred. In the formula (CAIIa), two members derived from R2c to R4C are a hydroxyl group and the remainder is preferably a hydrogen atom. Specific embodiments of the repeating units (cy3) and (cy4) are proposed below, but the invention is not limited thereto. • 113 - 201033732 〇\ 〇\ 〇人免八—φ«Λι Λ The content of the repeated single 兀(cyl) to (cy4) is preferably from 5 to 40 mol%, from 5 to 3 〇mol% Preferably, it is more preferably from 1 to 25 mol%, and all of the repeating units in the resin (C) are taken as the standard. The resin (C) may have a plurality of repeating units (cyl) to (cy4) ^ In the example in which the resin (C) contains a fluorine atom, the fluorine atom content is preferably from 5 to 80% by mass / β. More preferably, it is 8% by mass, based on the molecular weight of the resin (C). Similarly, the fluorine atom-containing repeating unit is preferably from 1 Torr to 100% by mass, more preferably from 30 to 1% by mass, based on all the repeating units in the resin (c). In the example in which the resin (C) contains a halogen atom, the content of the germanium atom is preferably from 2 to 50% by mass, more preferably from 2 to 30% by mass, based on the molecular weight of the resin (C). Similarly, the halogen atom-containing repeating unit is preferably from 10 to 90% by mass, more preferably from 20 to 80% by mass, based on all of the repeating units in the resin (C). The resin (C) has a standard polystyrene equivalent average molecular weight of preferably from 1,000 to 100,000, more preferably from 1,000 to 50,000, even more preferably from 2,000 to 15,000. The resin (C) in the sensitized ray or radiation sensitive resin composition can be used by appropriately adjusting the content thereof to provide a sensitized ray or radiation sensitive resin film having a receding contact angle within the above range, but The content of -114-201033732 is preferably from 0.01 to 10% by mass, more preferably from 0.1 to 10% by mass, more preferably from 1 to 9% by mass, and even more preferably from 0.5 to 8% by mass. The total solid content of the ray or radiation sensitive resin composition is correct. Similar to the resin as the resin, it is of course preferable that the amount of impurities (such as metal) is small in the resin (C), and likewise, the content of the residual monomer or oligomer component is from 〇 to 10 by mass. % is more preferable, preferably from 〇 to 5% by mass, and more preferably from 〇 to 1% by mass. When these conditions are satisfied, a photoresist having no foreign matter in the liquid or having a sensitivity that does not change with aging or the like is obtained. Similarly, considering the resolution, the photoresist profile, the sidewalls of the photoresist pattern, the roughness, and the like, the molecular weight distribution (Mw/Mn, sometimes referred to as "polydispersity") is from 1 to 3 Good, better from 1 to 2, better from 1 to 1.8 and best from 1 to 1.5. As the resin (C)', a variety of commercially available products can be used or the resin can be synthesized similarly to the resin (A) by a usual method (e.g., 'radical polymerization). Specific examples of the resin (C) are set forth below. Similarly, the molar ratio, weight average molecular weight (Mw), and polydispersity (Mw/Mn) of the repeating unit of each resin Q (corresponding to the repeating unit from the left) are shown in Table 1 below. 1 1 r -11J - 201033732
O〜 f3c^cf3O~ f3c^cf3
r4r o人。R4r o person.
ο.ο.
-116 201033732-116 201033732
(C-26) 201033732(C-26) 201033732
-118- 201033732-118- 201033732
-119 - 201033732-119 - 201033732
(C-65)(C-65)
-120- 201033732-120- 201033732
(C-69)(C-69)
-121 - 201033732-121 - 201033732
(C-M(C-M
(C娜 0^0(C Na 0^0
-122- 201033732-122- 201033732
201033732201033732
124- 201033732124- 201033732
-125 - 201033732-125 - 201033732
Ο (C-130]Ο (C-130)
201033732201033732
-127 - 201033732-127 - 201033732
-128- 201033732-128- 201033732
-129- 201033732-129- 201033732
-130- 201033732-130- 201033732
-131 - 201033732-131 - 201033732
〇〇
132 201033732132 201033732
(C-197)(C-197)
(C-198)(C-198)
-133- 201033732-133- 201033732
-134- 201033732-134- 201033732
-135- 201033732-135- 201033732
-136- 201033732-136- 201033732
(0258)(0258)
1 (C-267) {C-268)1 (C-267) {C-268)
137- 201033732137- 201033732
(C-273)(C-273)
(C-275) -138- 201033732(C-275) -138- 201033732
201033732201033732
-140- 201033732-140- 201033732
(C-290)(C-290)
(C-303)(C-303)
141 201033732141 201033732
(C-308) CF3(C-308) CF3
cf3 (C-313)Cf3 (C-313)
-142- 201033732 表1-142- 201033732 Table 1
樹脂 組成物 Mw Mw/Mn C-l 100 6000 1.5 C-2 100 7500 1.4 C-3 100 6000 1.4 04 100 9000 1.5 C-5 100 6000 1.4 C-6 50/50 6500 1.4 C-7 90/10 8000 1.4 C-8 60/40 8000 1.3 C-9 30/30/30/10 9500 1.4 C-IO 70/30 7000 1.4 C-ll 50/10/40 9000 1.6 C-12 80/20 6000 1,4 CM3 40/30/30 9500 1.4 C-14 50/50 8000 1.4 C-15 70/30 7000 1.4 C-16 100 6000 1.4 C-17 100 8000 1.4 C-18 40/20/40 6000 1.4 C-19 40/60 5000 1.5 C-20 30/40/30 7000 1.4 C-2l 40/40/10/10 6000 1.4 C-22 100 5500 1.4 C-23 100 9500 1.5 C-24 70/30 8500 1.4 C-25 50/30/20 5000 1.4 C-26 50/20/30 5500 1.4 C-27 50/50 9000 1.5 C-28 50/40/10 9000 1.4 C-29 60/20/20 6500 1.4 C-30 70/30 6500 1.4 C-31 70/30 9000 1.5 C-32 90/10 9000 1.5 C-33 70/20/10 7000 1.4 C-34 80/10/10 8500 1.5 C-35 60/30/10 7500 1.4 樹脂 組成物 Mw Mw/Mn C-36 50/50 5000 1.5 C-37 30/30/30/5/5 6000 1.5 C-38 50/50 4500 1.4 C-39 80/20 5000 1.4 C-40 100 5000 1.4 C-41 100 9000 1.5 C-42 100 10000 1.5 C-43 90/10 8500 1.4 C-44 30/30/30/10 5500 1.4 C-45 60/30/10 6500 1.4 C-46 70/30 6500 1.4 C-47 30/20/50 7000 1.4 C-48 80/20 8000 1.5 C-49 60/30/10 6000 1.4 C-50 60/40 8000 1.5 051 50/50 9500 1.4 C-52 90/10 8000 1.5 C-53 100 7000 1.5 C-54 70/10/10/10 5500 1.4 C-55 80/20 6500 1.4 C-56 30/30/40 6000 1,4 C-57 100 6000 1.4 C-58 90/10 8000 1,4 C-59 80/20 7000 1.5 C-60 50/20/30 6000 1.4 C-61 60/40 4500 1.5 C-62 100 6500 1.4 C-63 80/10/10 7000 1.5 C-64 90/10 9000 1.5 C-65 70/30 8000 1.4 C-66 35/30/10/5/20 7000 1.4 C-67 100 6500 1.4 C-68 80/20 6500 1.4 C-69 70/20/10 7000 1.4 C-70 60/30/10 9000 1,5 1 i ο -- 201033732 表ι(繼續) 樹脂 組成物 Mw Mw/Mn C-71 60/20/20 8000 1.4 C-72 100 9500 1.5 C-73 40/60 8000 1.4 C-74 60/10/30 7000 L5 C-75 100 5500 1.5 C-76 90/10 6500 1.4 077 90/10 7500 1.3 C-78 50/10/20/20 6000 1.5 C-79 70/30 5000 1.3 C-80 70/10/20 8500 1,5 C-81 80/20 5500 1,3 C-82 100 8000 1.3 C-83 85/5/10 6500 1.4 C-84 80/20 8000 1.5 C-85 60/30/10 10000 1.5 C-86 100 8000 1.5 C-87 55/30/5/10 8000 1.3 C-88 40/30/30 6000 1.3 C-89 70/30 6500 1.3 C-90 90/10 8000 1.5 C-91 70/20/10 6500 1.5 C-92 100 7000 1.4 C-93 100 6000 1.5 C-94 100 13000 1.4 C-95 100 4000 1.4 096 100 6000 1.5 C-97 100 10000 1.4 C-98 100 7500 1.5 C-99 50/50 6500 1.4 C-100 50/50 8500 1.4 C-101 80/20 7000 1.3 C-102 50/20/30 4500 1.3 C-103 90/10 5500 1.3 C-104 60/30/10 6000 1.5 C-105 80/20 8000 1.3 樹脂 組成物 Mw Mw/Mn C-106 50/45/5 7500 1.4 C-107 80/20 7000 1.5 C-108 30/30/30/10 9000 1.6 C-109 70/30 8000 1.3 C-110 50/30/20 9000 1.4 C-I11 60/10/30 6000 1.5 C-112 60/5/35 8000 1.5 C-113 50/40/10 9500 1.5 C-114 80/20 7000 1.5 C-115 90/10 6000 1.2 C-116 40/20/30/10 8000 1,3 C-117 50/50 6000 1.5 C-118 100 9500 1.4 C-119 50/20/20/10 8000 1.5 C-120 75/10/10/5 7000 1.3 C-121 30/30/10/30 5500 1.3 C-122 100 8000 1.3 C-123 100 9500 1.5 C-124 100 9000 1.6 C-125 90/10 9500 1.3 C-126 70/30 7500 1.5 C-127 70/30 8000 1.3 0128 85/15 6000 1.5 0129 90/10 7000 1,6 C-130 50/20/30 5000 1.3 0131 60/20/20 4000 1.4 0132 50/30/20 6500 1.4 CM33 70/10/20 7000 1.4 C-134 80/10/10 9000 1.4 C-135 60/40 8000 1.5 CM 36 30/70 9000 1.4 C-137 70/15/15 7500 1.5 C-138 70/30 8000 1.4 C-139 75/5/10/10 6000 1.5 C-140 70/30 5500 1.5 144- 201033732 表ι(繼續)Resin composition Mw Mw/Mn Cl 100 6000 1.5 C-2 100 7500 1.4 C-3 100 6000 1.4 04 100 9000 1.5 C-5 100 6000 1.4 C-6 50/50 6500 1.4 C-7 90/10 8000 1.4 C -8 60/40 8000 1.3 C-9 30/30/30/10 9500 1.4 C-IO 70/30 7000 1.4 C-ll 50/10/40 9000 1.6 C-12 80/20 6000 1,4 CM3 40/ 30/30 9500 1.4 C-14 50/50 8000 1.4 C-15 70/30 7000 1.4 C-16 100 6000 1.4 C-17 100 8000 1.4 C-18 40/20/40 6000 1.4 C-19 40/60 5000 1.5 C-20 30/40/30 7000 1.4 C-2l 40/40/10/10 6000 1.4 C-22 100 5500 1.4 C-23 100 9500 1.5 C-24 70/30 8500 1.4 C-25 50/30/ 20 5000 1.4 C-26 50/20/30 5500 1.4 C-27 50/50 9000 1.5 C-28 50/40/10 9000 1.4 C-29 60/20/20 6500 1.4 C-30 70/30 6500 1.4 C -31 70/30 9000 1.5 C-32 90/10 9000 1.5 C-33 70/20/10 7000 1.4 C-34 80/10/10 8500 1.5 C-35 60/30/10 7500 1.4 Resin composition Mw Mw /Mn C-36 50/50 5000 1.5 C-37 30/30/30/5/5 6000 1.5 C-38 50/50 4500 1.4 C-39 80/20 5000 1.4 C-40 100 5000 1.4 C-41 100 9000 1.5 C-42 100 10000 1.5 C-43 90/10 8500 1.4 C-44 30/30/30/10 5500 1.4 C-45 60/30/10 6500 1.4 C-46 70/30 6500 1.4 C-47 30/20/50 7000 1.4 C-48 80/20 8000 1.5 C-49 60/30/10 6000 1.4 C-50 60 /40 8000 1.5 051 50/50 9500 1.4 C-52 90/10 8000 1.5 C-53 100 7000 1.5 C-54 70/10/10/10 5500 1.4 C-55 80/20 6500 1.4 C-56 30/30 /40 6000 1,4 C-57 100 6000 1.4 C-58 90/10 8000 1,4 C-59 80/20 7000 1.5 C-60 50/20/30 6000 1.4 C-61 60/40 4500 1.5 C- 62 100 6500 1.4 C-63 80/10/10 7000 1.5 C-64 90/10 9000 1.5 C-65 70/30 8000 1.4 C-66 35/30/10/5/20 7000 1.4 C-67 100 6500 1.4 C-68 80/20 6500 1.4 C-69 70/20/10 7000 1.4 C-70 60/30/10 9000 1,5 1 i ο -- 201033732 Table ι (continued) Resin composition Mw Mw/Mn C- 71 60/20/20 8000 1.4 C-72 100 9500 1.5 C-73 40/60 8000 1.4 C-74 60/10/30 7000 L5 C-75 100 5500 1.5 C-76 90/10 6500 1.4 077 90/10 7500 1.3 C-78 50/10/20/20 6000 1.5 C-79 70/30 5000 1.3 C-80 70/10/20 8500 1,5 C-81 80/20 5500 1,3 C-82 100 8000 1.3 C-83 85/5/10 6500 1.4 C-84 80/20 8000 1.5 C-85 60/30/10 10000 1.5 C-86 100 8000 1.5 C-87 55/30/5/10 8000 1.3 C-88 40/30/30 6000 1.3 C-89 70/30 6500 1.3 C-90 90/10 8000 1.5 C-91 70/20/10 6500 1.5 C-92 100 7000 1.4 C-93 100 6000 1.5 C-94 100 13000 1.4 C-95 100 4000 1.4 096 100 6000 1.5 C-97 100 10000 1.4 C-98 100 7500 1.5 C-99 50/50 6500 1.4 C-100 50/50 8500 1.4 C-101 80/20 7000 1.3 C-102 50/20/30 4500 1.3 C-103 90/10 5500 1.3 C-104 60/30/10 6000 1.5 C-105 80/20 8000 1.3 Resin composition Mw Mw/Mn C-106 50/ 45/5 7500 1.4 C-107 80/20 7000 1.5 C-108 30/30/30/10 9000 1.6 C-109 70/30 8000 1.3 C-110 50/30/20 9000 1.4 C-I11 60/10/ 30 6000 1.5 C-112 60/5/35 8000 1.5 C-113 50/40/10 9500 1.5 C-114 80/20 7000 1.5 C-115 90/10 6000 1.2 C-116 40/20/30/10 8000 1,3 C-117 50/50 6000 1.5 C-118 100 9500 1.4 C-119 50/20/20/10 8000 1.5 C-120 75/10/10/5 7000 1.3 C-121 30/30/10/ 30 5500 1.3 C-122 100 8000 1.3 C-123 100 9500 1.5 C-124 100 9000 1.6 C-125 90/10 9500 1.3 C-126 70/30 7500 1.5 C-127 70/30 8000 1.3 0128 85/15 6000 1.5 0129 90/10 7000 1,6 C-130 50/20/30 5000 1.3 0131 60/20/20 4000 1.4 0132 50/30/20 6500 1.4 CM33 70/10/20 7000 1.4 C-134 80/10/10 9000 1.4 C-135 60/40 8000 1.5 CM 36 30/70 9000 1.4 C-137 70/15/15 7500 1.5 C-138 70/30 8000 1.4 C-139 75/5/10/10 6000 1.5 C-140 70/30 5500 1.5 144- 201033732 Table ι (continued)
樹脂 組成物 Mw Mw/Mn C-141 50/25/25 6500 1.4 C-142 100 9000 1.6 C-143 50/40/10 7000 1.4 C-144 50/50 9000 1.4 0145 50/30/20 8000 1.4 0146 50/50 9000 1.5 C-147 48/50/2 6000 1.4 C-148 50/50 9000 1.5 C-149 50/25/25 6000 1.4 C-150 50/50 9500 1.5 C-151 50/50 8000 1.5 C-152 50/50 7000 1.4 C-153 95/5 3000 1.4 C-154 100 5000 1.4 C-155 50/50 6000 1.5 0156 50/50 4000 1.5 C-157 100 8000 1.4 C-158 80/20 4500 1.4 C-159 80/20 3500 1.4 C-160 70/30 7000 1.4 C-161 50/50 10000 1.3 C-162 95/5 4500 1.4 C-163 90/10 8500 1.4 C-164 25/50/25 6000 1.5 C-165 40/40/10/10 6500 1.4 C-166 100 8000 1.4 C-167 100 6500 1.4 C-168 80/20 5000 1.3 C-169 40/30/30 4500 1,5 C-170 90/10 3000 1.4 C-171 100 4500 1.4 C-172 100 3500 1.4 C-173 60/40 5000 1.4 C-174 90/10 6000 1,4 C-175 100 4000 1.5 樹脂 組成物 Mw Mw/Mn C-176 100 8000 1.4 C-177 100 5000 1.4 C-178 100 10000 1.5 C-179 100 6000 1.4 C-180 100 7000 1.3 C-181 100 5500 1.4 C-182 100 8000 1.3 C-183 90/10 4500 1.4 C-184 80/20 6000 1.4 C-185 70/30 5500 1.6 C-186 85/15 8500 1.4 C-187 90/10 3000 1.3 C-188 70/30 4500 1.4 C-189 75/25 6500 1.4 C-190 55/45 8500 1.3 C-191 90/10 5500 1.4 C-192 75/25 9000 1.4 C-193 70/30 10000 1.5 C-194 70/30 5000 1.4 C-195 80/20 7000 1.4 C-196 85/15 4500 1.4 C-197 80/20 3500 1.5 C-198 75/25 6000 1.4 C-199 100 5000 1.4 C-200 80/20 6000 1.4 C-201 80/20 8000 1.5 C-202 100 4500 1.5 C-203 70/30 3500 1.4 C-204 80/20 10000 1.4 C-205 80/20 7000 1.4 C-206 90/10 4000 1.4 C-207 80/15/5 10000 1.4 C-208 85/10/5 5000 1.5 C-209 90/8/2 13000 1.5 C-210 85/10/5 6000 1.5 201033732 表ι(繼續) 樹脂 組成物 Mw Mw/Mn C-211 90/8/2 8000 1.4 C-212 50/50 12000 1.5 0213 50/50 8000 1.3 C-214 85/15 6500 1.5 C-215 85/15 4000 1.5 C-216 90/10 7500 1.6 C-217 90/10 3500 1.5 C-218 95/5 5500 1.4 C-219 85/10/5 5000 1.5 C-220 88/10/2 13000 1.4 C-221 90/8/2 12000 1.5 C-222 90/8/2 11000 1.4 C-223 90/8/2 9000 1.5 C-224 50/50 6000 1.5 C-225 50/50 8000 1.5 C-226 80/20 4500 1.3 0227 85/15 8500 1.6 C-228 90/10 10000 1.4 C-229 90/10 3500 1.5 C-230 95/5 4500 1.5 C-231 50/50 4000 1.5 C-232 80/18/2 6000 1.5 C-233 90/8/2 9500 1.5 C-234 80/20 6500 1,4 C-235 90/10 8000 1.5 C-236 100 8000 1.5 C-237 95/5 4500 1.5 C-238 90/10 10000 1.5 0239 100 6500 1.4 C-240 80/20 6500 1.4 C-241 70/20/10 7000 L4 C-242 90/10 7000 1.6 C-243 50/20/30 5000 1.3 Ct244 40/30/30 5000 1.4 C-245 60/40 6000 1.4 樹脂 組成物 Mav Mw/Mn C-246 40/20/40 7000 1.4 C-247 40/30/30 8000 1.5 C-248 40/30/30 9500 1.5 C-249 60/40 9500 1.5 C-250 40/40/20 " 7500 1.4 C-251 80/20 9000 1.5 C-252 80/20 9000 1.5 C-253 40/30/15/15 7000 1.4 C-254 60/40 8500 L4 C-255 50/30/20 8000 1.4 C-256 30/30/40 9500 1.5 C-257 30/50/20 8000 1.3 C-258 30/50/20 8000 1.3 C-259 40/40/20 6500 1.4 C-260 50/30/20 6000 1.4 C-261 80/20 8500 1.5 C-262 20/80 10000 1.5 C-263 100 8500 1.5 C-264 100 6000 1.4 C-265 90/10 8000 1,4 C-266 30/70 9000 1.6 C-267 50/50 4000 1.3 C-268 100 6500 1.4 C-269 80/20 6500 1.4 146- 201033732 表ι(繼續)Resin composition Mw Mw/Mn C-141 50/25/25 6500 1.4 C-142 100 9000 1.6 C-143 50/40/10 7000 1.4 C-144 50/50 9000 1.4 0145 50/30/20 8000 1.4 0146 50/50 9000 1.5 C-147 48/50/2 6000 1.4 C-148 50/50 9000 1.5 C-149 50/25/25 6000 1.4 C-150 50/50 9500 1.5 C-151 50/50 8000 1.5 C -152 50/50 7000 1.4 C-153 95/5 3000 1.4 C-154 100 5000 1.4 C-155 50/50 6000 1.5 0156 50/50 4000 1.5 C-157 100 8000 1.4 C-158 80/20 4500 1.4 C -159 80/20 3500 1.4 C-160 70/30 7000 1.4 C-161 50/50 10000 1.3 C-162 95/5 4500 1.4 C-163 90/10 8500 1.4 C-164 25/50/25 6000 1.5 C -165 40/40/10/10 6500 1.4 C-166 100 8000 1.4 C-167 100 6500 1.4 C-168 80/20 5000 1.3 C-169 40/30/30 4500 1,5 C-170 90/10 3000 1.4 C-171 100 4500 1.4 C-172 100 3500 1.4 C-173 60/40 5000 1.4 C-174 90/10 6000 1,4 C-175 100 4000 1.5 Resin composition Mw Mw/Mn C-176 100 8000 1.4 C-177 100 5000 1.4 C-178 100 10000 1.5 C-179 100 6000 1.4 C-180 100 7000 1.3 C-181 100 5500 1.4 C-182 100 8000 1.3 C-183 90/10 4500 1.4 C-184 80 /20 6000 1.4 C-185 70/30 5500 1.6 C-186 85/15 8500 1.4 C-187 90/10 3000 1.3 C-188 70/30 4500 1.4 C-189 75/25 6500 1.4 C-190 55/45 8500 1.3 C-191 90/10 5500 1.4 C-192 75/25 9000 1.4 C-193 70/30 10000 1.5 C-194 70/30 5000 1.4 C-195 80/20 7000 1.4 C-196 85/15 4500 1.4 C-197 80/20 3500 1.5 C-198 75/25 6000 1.4 C-199 100 5000 1.4 C-200 80/20 6000 1.4 C-201 80/20 8000 1.5 C-202 100 4500 1.5 C-203 70/30 3500 1.4 C-204 80/20 10000 1.4 C-205 80/20 7000 1.4 C-206 90/10 4000 1.4 C-207 80/15/5 10000 1.4 C-208 85/10/5 5000 1.5 C-209 90 /8/2 13000 1.5 C-210 85/10/5 6000 1.5 201033732 Table 1 (continued) Resin composition Mw Mw/Mn C-211 90/8/2 8000 1.4 C-212 50/50 12000 1.5 0213 50/ 50 8000 1.3 C-214 85/15 6500 1.5 C-215 85/15 4000 1.5 C-216 90/10 7500 1.6 C-217 90/10 3500 1.5 C-218 95/5 5500 1.4 C-219 85/10/ 5 5000 1.5 C-220 88/10/2 13000 1.4 C-221 90/8/2 12000 1.5 C-222 90/8/2 11000 1.4 C-223 90/8/2 9000 1.5 C-224 50/50 6000 1.5 C-225 50/50 8000 1.5 C-226 80/20 450 0 1.3 0227 85/15 8500 1.6 C-228 90/10 10000 1.4 C-229 90/10 3500 1.5 C-230 95/5 4500 1.5 C-231 50/50 4000 1.5 C-232 80/18/2 6000 1.5 C-233 90/8/2 9500 1.5 C-234 80/20 6500 1,4 C-235 90/10 8000 1.5 C-236 100 8000 1.5 C-237 95/5 4500 1.5 C-238 90/10 10000 1.5 0239 100 6500 1.4 C-240 80/20 6500 1.4 C-241 70/20/10 7000 L4 C-242 90/10 7000 1.6 C-243 50/20/30 5000 1.3 Ct244 40/30/30 5000 1.4 C- 245 60/40 6000 1.4 Resin composition Mav Mw/Mn C-246 40/20/40 7000 1.4 C-247 40/30/30 8000 1.5 C-248 40/30/30 9500 1.5 C-249 60/40 9500 1.5 C-250 40/40/20 " 7500 1.4 C-251 80/20 9000 1.5 C-252 80/20 9000 1.5 C-253 40/30/15/15 7000 1.4 C-254 60/40 8500 L4 C -255 50/30/20 8000 1.4 C-256 30/30/40 9500 1.5 C-257 30/50/20 8000 1.3 C-258 30/50/20 8000 1.3 C-259 40/40/20 6500 1.4 C -260 50/30/20 6000 1.4 C-261 80/20 8500 1.5 C-262 20/80 10000 1.5 C-263 100 8500 1.5 C-264 100 6000 1.4 C-265 90/10 8000 1,4 C-266 30/70 9000 1.6 C-267 50/50 4000 1.3 C-268 100 6500 1.4 C-269 80/20 6500 1.4 146- 201033732 Table ι (continued)
樹脂 組成物 Mw Mw/Mn C-270 30/70 6500 1.4 C-271 80/10/10 7000 1.4 C-272 30/70 9000 1.4 C-273 60/30/10 8000 1.4 C-274 80/20 9000 1.5 C-275 60/35/5 6000 1.4 0276 40/60 9000 1.5 C-277 60/30/10 8000 1.4 C-278 65/20/15 9500 1.5 C-279 85/15 8000 1.5 C-280 90/10 7000 1.4 C-281 100 8000 1.3 0282 100 9500 1.5 C-283 100 9000 1.6 C-284 90/10 9500 1.3 C-285 70/30 7500 1.5 C-286 90/10 8000 1.3 C-287 80/20 6000 1.5 C-288 90/10 7000 1.6 C-289 50/20/30 6500 1.3 C-290 80/20 12000 1.6 C-291 70/30 8500 1.5 C-292 80/20 15000 1.6 C-293 60/40 6000 1.4 C-294 40/60 8000 1.5 0295 50/50 8000 1.5 C-296 80/20 6000 1.4 C-297 50/50 4000 1.5 C-298 50/50 8000 1.6 C-299 50/50 4000 1.5 C-300 50/50 8000 1.6 C-301 100 8000 1.5 C-302 100 7000 1.4 C-303 60/40 7000 1.5 C-304 50/30/20 8000 1.5 樹脂 組成物 Mw Mw/Mn C-305 100 5000 1.6 C-306 60/40 5500 1.5 C-307 60/40 6000 1.5 C-308 100 4500 1.5 0309 70/30 5000 1.5 C-310 50/50 6000 1.5 C-311 70/30 6500 1.6 C-312 50/50 5000 1.5 C-313 70/30 6000 1.5 C-314 100 7500 1.6 至於該樹脂(c),可單獨使用一種種類或可組合著使用Resin composition Mw Mw/Mn C-270 30/70 6500 1.4 C-271 80/10/10 7000 1.4 C-272 30/70 9000 1.4 C-273 60/30/10 8000 1.4 C-274 80/20 9000 1.5 C-275 60/35/5 6000 1.4 0276 40/60 9000 1.5 C-277 60/30/10 8000 1.4 C-278 65/20/15 9500 1.5 C-279 85/15 8000 1.5 C-280 90/ 10 7000 1.4 C-281 100 8000 1.3 0282 100 9500 1.5 C-283 100 9000 1.6 C-284 90/10 9500 1.3 C-285 70/30 7500 1.5 C-286 90/10 8000 1.3 C-287 80/20 6000 1.5 C-288 90/10 7000 1.6 C-289 50/20/30 6500 1.3 C-290 80/20 12000 1.6 C-291 70/30 8500 1.5 C-292 80/20 15000 1.6 C-293 60/40 6000 1.4 C-294 40/60 8000 1.5 0295 50/50 8000 1.5 C-296 80/20 6000 1.4 C-297 50/50 4000 1.5 C-298 50/50 8000 1.6 C-299 50/50 4000 1.5 C-300 50/50 8000 1.6 C-301 100 8000 1.5 C-302 100 7000 1.4 C-303 60/40 7000 1.5 C-304 50/30/20 8000 1.5 Resin composition Mw Mw/Mn C-305 100 5000 1.6 C- 306 60/40 5500 1.5 C-307 60/40 6000 1.5 C-308 100 4500 1.5 0309 70/30 5000 1.5 C-310 50/50 6000 1.5 C-311 70/30 6500 1.6 C-312 50/50 5000 1 . 5 C-313 70/30 6000 1.5 C-314 100 7500 1.6 As for the resin (c), one type may be used alone or in combination.
同樣地,組合著使用一具有至少氟原子或矽原子的任 一個之樹脂(CP)(其與該樹脂(C)不同)較佳。 具有至少氟原子或矽原子的任一個之樹脂(CP) 本發明之感光化射線或感放射線樹脂組成物可進一步 包括一具有至少氟原子或矽原子的任一個之樹脂(CP)(與 該樹脂(C)有所分別)。藉由包含該樹脂(C)與該樹脂(CP), -147- 201033732 該樹脂(c)與樹脂(CP)不均勻地分布至該薄膜表面層’及當 該沉浸媒質爲水時,所形成的薄膜可提高水在光阻薄膜表 面上的後退接觸角和該沉浸液體之流動性。該薄膜的後退 接觸角從60至90°較佳,70°或更大更佳。該樹脂(CP)可 藉由適當地調整其含量來使用,以提供一具有後退接觸角 在上述範圍內的薄膜,但是含量從至質量%較佳, 從0.01至5質量%更佳,從0.01至4質量%又更佳,而從 〇.〇1至3質量%又更佳,以該感光化射線或感放射線樹脂 組成物的全部固體含量爲準。 如上所述,該樹脂(CP)不均勻地分布至該界面,但是 不像界面活性劑,其不需要必需地在分子內具有親水性基 團及可不促成極性/非極性物質的均勻混合。 在該具有至少氟原子或矽原子的任一個樹脂(CP)中之 氟原子或矽原子可存在於該樹脂的主鏈中或可取代在側鏈 上。 該樹脂(CP)爲一具有含氟原子的烷基、含氟原子的環 烷基或含氟原子的芳基作爲該含氟原子的部分結構之樹脂 較佳。 該含氟原子的烷基(具有碳數1至10較佳,從1至4 更佳)爲具有至少一個氫原子由氟原子置換及可進一步具 有其它取代基之線性或分支烷基。 該含氟原子的環烷基爲具有至少一個氫原子由氟原子 置換及可進一步具有其它取代基之單環或多環的環烷基。 該含氟原子的芳基爲具有至少一個氫原子由氟原子置 換及可進一步具有其它取代基之芳基(例如,苯基、萘基)。 -148 - 201033732 該含氟原子的烷基、含氟原子的環烷基及含氟原子的 芳基之較佳實施例包括由上述關於樹脂(C)所描述的式(F2) 至(F4)所表示之基團,但是本發明不限於此。 在本發明中,在以(甲基)丙烯酸酯爲基礎的重覆單元 中包含由式(F2)至(F 4)所表示的基團較佳。 下列提出該具有氟原子的重覆單元之特定實施例,但 是本發明不限於此。Similarly, it is preferred to use a resin (CP) having at least one of fluorine atoms or germanium atoms in combination with the resin (C). Resin (CP) having at least one of a fluorine atom or a ruthenium atom The photosensitive ray or radiation sensitive resin composition of the present invention may further comprise a resin (CP) having at least one of fluorine atoms or ruthenium atoms (with the resin) (C) There are differences). By including the resin (C) and the resin (CP), -147-201033732, the resin (c) and the resin (CP) are unevenly distributed to the surface layer of the film and when the immersion medium is water, The film enhances the receding contact angle of water on the surface of the photoresist film and the fluidity of the immersion liquid. The receding contact angle of the film is preferably from 60 to 90, more preferably 70 or more. The resin (CP) can be used by appropriately adjusting the content thereof to provide a film having a receding contact angle within the above range, but the content is preferably from 10,000 to 5% by mass, more preferably from 0.01 to 5% by mass, from 0.01. It is more preferably 4% by mass, and more preferably 〇1 to 3% by mass, based on the total solid content of the sensitized ray or the radiation-sensitive resin composition. As described above, the resin (CP) is unevenly distributed to the interface, but unlike the surfactant, it does not necessarily have to have a hydrophilic group in the molecule and may not contribute to uniform mixing of the polar/nonpolar substance. A fluorine atom or a ruthenium atom in the resin (CP) having at least a fluorine atom or a ruthenium atom may be present in the main chain of the resin or may be substituted on the side chain. The resin (CP) is preferably a resin having a fluorine atom-containing alkyl group, a fluorine atom-containing cycloalkyl group or a fluorine atom-containing aryl group as a partial structure of the fluorine atom. The fluorine atom-containing alkyl group (having preferably having a carbon number of 1 to 10, more preferably 1 to 4) is a linear or branched alkyl group having at least one hydrogen atom substituted by a fluorine atom and further having another substituent. The fluorine atom-containing cycloalkyl group is a monocyclic or polycyclic cycloalkyl group having at least one hydrogen atom substituted by a fluorine atom and further having another substituent. The aryl group of the fluorine atom is an aryl group (e.g., phenyl group, naphthyl group) having at least one hydrogen atom which is substituted by a fluorine atom and which may further have other substituents. -148 - 201033732 Preferred examples of the fluorine atom-containing alkyl group, the fluorine atom-containing cycloalkyl group, and the fluorine atom-containing aryl group include the formulas (F2) to (F4) described above for the resin (C). The group indicated, but the invention is not limited thereto. In the present invention, it is preferred to include a group represented by the formulae (F2) to (F 4) in the (meth) acrylate-based repeating unit. A specific embodiment of the repeating unit having a fluorine atom is proposed below, but the invention is not limited thereto.
在特定的實施例中’ 代表氫原子、_CH3、-F或- CF3。 X2代表-F或- CF3。In a particular embodiment, ' represents a hydrogen atom, _CH3, -F or -CF3. X2 represents -F or -CF3.
-149 - 201033732-149 - 201033732
-150- 201033732-150- 201033732
該樹脂(CP)爲具有院基砂院基結構(三燒基砂院基較 佳)或環狀矽氧烷結構作爲該含矽原子的部分結構之樹月旨 較佳。 該烷基矽烷基結構及環狀矽氧烷結構的特定實施例包 括由上述關於樹脂(C)所描述之式(CS-1)至(CS-3)所表示的 基團。 再者’該樹脂(CP)可包含至少一個選自於由下列^)及 (z)所組成之群的基團: (X)可溶於鹼的基團;及 (z)能藉由酸作用分解的基團。 這些基團的特定實施例與上述關於樹脂(c)所描述的 那些相同。 該包含在該樹脂(CP)中、具有能藉由酸作用分解的基 201033732 團(Z)之重覆單元的實施例與具有對樹脂(A)所描述之可酸 分解的基團之那些重覆單元相同。在該樹脂(cp)中,該具 有能藉由酸作用分解的基團(Z)之重覆單元的含量從1至8〇 莫耳%較佳,從10至80莫耳%更佳,從20至60莫耳%又 更佳’以在該樹脂(CP)中的全部重覆單元爲準。 該樹脂(CP)可進一步具有由上述關於樹脂所描述 之式(cm)所表示的重覆單元。 在該樹脂(cp)包含氟原子的實例中,該氟原子含量從 5至80質量%較佳’從10至80質量%更佳,以該樹脂(CP) 的分子量爲準》同樣地,該含氟原子重覆單元佔有從10至 100質量%較佳,從30至100質量%更佳,以在該樹脂(CP) 中的全部重覆單元爲準》 在該樹脂(CP)包含矽原子的實例中,該矽原子含量從 2至50質量%較佳,從2至30質量%更佳,以該樹脂(CP) 的分子量爲準。同樣地,該含矽原子的重覆單元佔有從1〇 至100質量%較佳,從20至100質量%更佳,以在該樹脂 (CP)中的全部重覆單元爲準。 該樹脂(CP)的標準聚苯乙烯當量平均分子量從1,〇〇〇 至 100,000 較佳,從 1,000 至 50,000 更佳,從 2,000 至 15,000 又更佳。 該樹脂(CP)可使用與樹脂(A)相同的方式來合成及純 化,且雜質(諸如金屬)的量少當然較佳’而且同樣地,該 殘餘的單體或寡聚物組分之含量從〇至1〇質量%較佳’從 〇至5質量%更佳,從0至1質量%又更佳。藉由滿足這些 條件,可獲得在液體中無外來物質或靈敏度不隨著時效改 -152- 201033732 變及其類似性質之感光化射線或感放射線樹脂組成物。再 者,考慮到解析度、光阻外形、光阻圖案的側壁、粗糙度 及其類似性質,分子量分布(Mw/Mn,有時指爲"多分散性 ")從1至3較佳,從1至2更佳,從1至1.8又更佳及從1 至1.5最佳。 至於該樹脂(CP),可使用多種可商業購得的產物,或 該樹脂可使用與樹脂(A)相同的方式純化或藉由普通方法 (例如,自由基聚合))合成。特別是,該樹脂可使用與樹脂 (C)相同的方式合成。 下列提出該具有至少氟原子或矽原子的任一個之樹脂 (CP)的特定實施例。同樣地’每種樹脂之重覆單元(與從左 邊開始的重覆單元相應)的莫耳比率、重量平均分子量(Mw) 及多分散性(Mw/Mn)顯示在之後表2中。 〇 -153 - 201033732 •r4r 040 〇人?、奶卞 ή -(cf2cf2^ f3c 十 Cl^ OH (CP-2)The resin (CP) is preferably a tree having a courtyard-based sand-based structure (preferably a three-base sand-based base) or a cyclic siloxane structure as a partial structure of the ruthenium-containing atom. Specific examples of the alkyl fluorenyl structure and the cyclic oxirane structure include the groups represented by the above formula (CS-1) to (CS-3) described for the resin (C). Further, the resin (CP) may comprise at least one group selected from the group consisting of: (X) a group soluble in alkali; and (z) capable of being acid-based A group that decomposes. Specific examples of these groups are the same as those described above for the resin (c). The embodiment of the repeating unit comprising the group 201033732 group (Z) capable of decomposing by acid action in the resin (CP) and those having the acid-decomposable group described for the resin (A) The cover unit is the same. In the resin (cp), the content of the repeating unit having a group (Z) which can be decomposed by an acid action is preferably from 1 to 8 mol%, more preferably from 10 to 80 mol%, from 20 to 60 mol% and more preferably 'takes all the repeating units in the resin (CP). The resin (CP) may further have a repeating unit represented by the above formula (cm) relating to the resin. In the example in which the resin (cp) contains a fluorine atom, the fluorine atom content is preferably from 5 to 80% by mass, more preferably from 10 to 80% by mass, based on the molecular weight of the resin (CP). The fluorine atom-containing repeating unit is preferably from 10 to 100% by mass, more preferably from 30 to 100% by mass, based on all of the repeating units in the resin (CP). The resin (CP) contains a halogen atom. In the example, the content of the germanium atom is preferably from 2 to 50% by mass, more preferably from 2 to 30% by mass, based on the molecular weight of the resin (CP). Similarly, the ruthenium atom-containing repeating unit is preferably from 1 至 to 100% by mass, more preferably from 20 to 100% by mass, based on all the repeating units in the resin (CP). The resin (CP) has a standard polystyrene equivalent average molecular weight of from 1, 〇〇〇 to 100,000, more preferably from 1,000 to 50,000, and even more preferably from 2,000 to 15,000. The resin (CP) can be synthesized and purified in the same manner as the resin (A), and the amount of impurities such as metal is of course preferably 'and the same, the content of the residual monomer or oligomer component From 〇 to 1% by mass, preferably 'from 〇 to 5% by mass, more preferably from 0 to 1% by mass. By satisfying these conditions, it is possible to obtain a sensitized ray or a radiation-sensitive resin composition which does not have a foreign substance in the liquid or which has a sensitivity which does not change with the aging effect. Furthermore, considering the resolution, the photoresist profile, the sidewall of the photoresist pattern, the roughness, and the like, the molecular weight distribution (Mw/Mn, sometimes referred to as "polydispersity") is preferably from 1 to 3. It is better from 1 to 2, better from 1 to 1.8 and best from 1 to 1.5. As the resin (CP), a variety of commercially available products can be used, or the resin can be purified in the same manner as the resin (A) or synthesized by a usual method (e.g., radical polymerization). In particular, the resin can be synthesized in the same manner as the resin (C). A specific embodiment of the resin (CP) having at least one of a fluorine atom or a ruthenium atom is proposed below. Similarly, the molar ratio, weight average molecular weight (Mw), and polydispersity (Mw/Mn) of the repeating unit of each resin (corresponding to the repeating unit from the left side) are shown in Table 2 below. 〇 -153 - 201033732 •r4r 040 〇人? , milk thistle ή -(cf2cf2^ f3c ten Cl^ OH (CP-2)
OH (CP-3) ^4-°1¾ ~s\~ OH (CP-Λ) iCP^>OH (CP-3) ^4-°13⁄4 ~s\~ OH (CP-Λ) iCP^>
Ccp-1)Ccp-1)
(CP-23) (CP-24)(CP-23) (CP-24)
-154- 201033732-154- 201033732
·τγ 0^0 Ο^ΟΗ f3c 八 cf3·τγ 0^0 Ο^ΟΗ f3c eight cf3
(CR>2Q 0^0 V、(CR>2Q 0^0 V,
0^00^0
H° C^FaC7 〇H (CP-33) 0>^WV<0 (CP-29)H° C^FaC7 〇H (CP-33) 0>^WV<0 (CP-29)
6C 八 cf36C eight cf3
o^o o^o 0^*01F八爲L (cp-as)o^o o^o 0^*01F eight is L (cp-as)
-155 - 201033732-155 - 201033732
<CP-51) (CP-32) (CP-53) ^^4)<CP-51) (CP-32) (CP-53) ^^4)
-156- 201033732-156- 201033732
(CFS5)(CFS5)
(CP-57)(CP-57)
-157- 201033732-157- 201033732
(CP41) (CP-8G) 0-^0 0人 Ο 0么0 0^0 0^0 0^0 V \ V V- 一 么 (CP-82) (CP-83) r4r Wr Hr -r>r r-ψ 0^0 0*^0 0^0 ?h2 o^o C^g (CP44)(CP41) (CP-8G) 0-^0 0人Ο 0?0 0^0 0^0 0^0 V \ V V- One (CP-82) (CP-83) r4r Wr Hr -r> r r-ψ 0^0 0*^0 0^0 ?h2 o^o C^g (CP44)
ryr 〇\'YVRyry 〇\'YV
(CP-85) (CP-86) (CP-87)(CP-85) (CP-86) (CP-87)
(CP-88) (CF^89) (QP*30> (CP-91) -158- 201033732(CP-88) (CF^89) (QP*30> (CP-91) -158- 201033732
(CR^Q (CP<9?) ^CFa Cf^(CR^Q (CP<9?) ^CFa Cf^
W+ 4^4+ 。人。O丄。 〇5Of3c^CX<c^ ^ mH ^3〇 hocf3 (CP-99) ❹ 0^0 。丄。。丄? 〇Λ〇 〇^〇kφ φ Α φ 冷 Τ ηρβ Τ ml CFa 〇 CF3 VJ w* Fgc (CP>KX) (CP-1Q1)W+ 4^4+. people. O丄. 〇5Of3c^CX<c^ ^ mH ^3〇 hocf3 (CP-99) ❹ 0^0 . Hey. . Hey? 〇Λ〇 〇^〇kφ φ Α φ cold η ηρβ Τ ml CFa 〇 CF3 VJ w* Fgc (CP>KX) (CP-1Q1)
FaC ΌΗ (CM02)FaC ΌΗ (CM02)
H^· ^ 0人。 0^0 F2 0^0fiVcFa F2a ^ ^ic^HCfSH^· ^ 0 people. 0^0 F2 0^0fiVcFa F2a ^ ^ic^HCfS
(CP-1D6) (CP-107)(CP-1D6) (CP-107)
F3C十奶 OH (GP-1D9) ❹ -159 - 201033732 表2 樹脂 組成物 Mw Mw/Mn CP-1 50/50 6000 L5 CP-2 50/50 7500 1.4 CP-3 50/50 6000 1.4 CP-4 100 9000 1.5 CP-5 50/50 6000 1.4 CP-6 40/60 8000 1.4 CP-7 60/40 6000 1.4 CP-8 50/50 6500 1.4 CP-9 50/50 8000 1.4 CP-10 50/50 6500 1.4 CP-11 50/50 10000 1.6 CP-12 40/60 7500 1.4 CP-13 40/60 6500 1.4 CP-14 100 8500 1.4 CP-15 40/60 7000 1.4 CP-16 60/40 7500 1.4 CP-17 40/60 6000 1.4 CP-18 50/30/20 5000 1.4 CP-19 40/60 8500 1.5 CP-20 40/60 5500 1.4 CP-21 50/50 6000 1.4 CP-22 40/20/40 5500 1.4 CP-23 100 9500 1.5 CP-24 40/60 8500 1.4 CP-25 50/10/40 8000 1.5 CP-26 50/50 6000 1.4 CP-27 50/50 5000 1.4 CP-28 70/30 9000 1.4 CP-29 50/50 7500 1.4 CP-30 60/40 9000 1.5 樹脂 組成物 Mw Mw/Mn CP-31 80/20 10000 1.5 CP-32 40/60 8500 1.4 CP-33 30/70 5500 1.4 CP-34 20/40/40 6500 1.4 CP-35 20/50/30 7000 1.4 CP-36 35/35/30 9000 1.5 CP-37 25/45/30 9000 1.5 CP-38 30/50/20 6000 1,4 CP-39 40/40/20 8000 1.5 CP-40 10/50/40 7000 1.4 CP-41 30/30/40 6500 1.3 CP-42 40/30/30 8000 1.5 CP-43 40/40/20 6000 1.3 CP-44 50/20/30 9500 1.5 CP-45 45/40/15 7000 1.3 OM6 50/30/20 8000 1.5 CP-47 35/25/40 10000 1.5 CP-48 50/50 8000 1.5 CP»49 100 5000 1.3 CP-50 100 6000 1.3 CP-51 100 4500 1.3 CP-52 100 5000 1.5 CP-53 100 5000 1.5 CP-54 100 5500 1.4 CP-55 50/50 9000 1.5 CP-56 80/20 9000 1.5 CP-57 50/50 6500 1.4 CP-58 50/25/25 6500 1.5 CP-59 58/38/2/2 4500 1.4 CP-60 40/40/20 5500 1.5 -160- 201033732 表2(繼續)F3C Ten Milk OH (GP-1D9) ❹ -159 - 201033732 Table 2 Resin Composition Mw Mw/Mn CP-1 50/50 6000 L5 CP-2 50/50 7500 1.4 CP-3 50/50 6000 1.4 CP-4 100 9000 1.5 CP-5 50/50 6000 1.4 CP-6 40/60 8000 1.4 CP-7 60/40 6000 1.4 CP-8 50/50 6500 1.4 CP-9 50/50 8000 1.4 CP-10 50/50 6500 1.4 CP-11 50/50 10000 1.6 CP-12 40/60 7500 1.4 CP-13 40/60 6500 1.4 CP-14 100 8500 1.4 CP-15 40/60 7000 1.4 CP-16 60/40 7500 1.4 CP-17 40/60 6000 1.4 CP-18 50/30/20 5000 1.4 CP-19 40/60 8500 1.5 CP-20 40/60 5500 1.4 CP-21 50/50 6000 1.4 CP-22 40/20/40 5500 1.4 CP -23 100 9500 1.5 CP-24 40/60 8500 1.4 CP-25 50/10/40 8000 1.5 CP-26 50/50 6000 1.4 CP-27 50/50 5000 1.4 CP-28 70/30 9000 1.4 CP-29 50/50 7500 1.4 CP-30 60/40 9000 1.5 Resin composition Mw Mw/Mn CP-31 80/20 10000 1.5 CP-32 40/60 8500 1.4 CP-33 30/70 5500 1.4 CP-34 20/40 /40 6500 1.4 CP-35 20/50/30 7000 1.4 CP-36 35/35/30 9000 1.5 CP-37 25/45/30 9000 1.5 CP-38 30/50/20 6000 1,4 CP-39 40 /40/20 8000 1.5 CP-40 10/50/40 7000 1.4 C P-41 30/30/40 6500 1.3 CP-42 40/30/30 8000 1.5 CP-43 40/40/20 6000 1.3 CP-44 50/20/30 9500 1.5 CP-45 45/40/15 7000 1.3 OM6 50/30/20 8000 1.5 CP-47 35/25/40 10000 1.5 CP-48 50/50 8000 1.5 CP»49 100 5000 1.3 CP-50 100 6000 1.3 CP-51 100 4500 1.3 CP-52 100 5000 1.5 CP-53 100 5000 1.5 CP-54 100 5500 1.4 CP-55 50/50 9000 1.5 CP-56 80/20 9000 1.5 CP-57 50/50 6500 1.4 CP-58 50/25/25 6500 1.5 CP-59 58 /38/2/2 4500 1.4 CP-60 40/40/20 5500 1.5 -160- 201033732 Table 2 (continued)
樹脂 組成物 Mw Mw/Mn CP-61 60/40 8000 1.4 CP-62 50/50 7500 1.3 CP-63 50/50 8000 1.3 CP-64 50/50 7000 1.3 CP-65 50/50 8000 1.5 CP-66 60/40 6000 1.3 CP-67 70/30 8000 1.4 CP-68 100 8000 1.5 CP-69 50/50 9500 1.6 CP-70 50/50 7000 1.3 CP-71 100 6000 1.4 CP-72 100 8000 1.5 CP-73 100 7000 1.5 CP-74 50/50 6000 1.5 CP-75 70/30 6000 1.5 CP-76 50/50 4000 1.2 CP-77 60/40 6000 1.3 CP-78 80/20 8000 1.5 CP-79 50/50 6000 1.4 CP-80 80/20 7000 1.5 CP-81 100 5000 1.3 CP-82 50/50 4000 1.3 CP-83 50/50 6000 1.3 CP-84 30/30/40 6000 1.5 CP-85 50/50 8000 1.6 CP-86 50/50 7000 1.3 CP-87 50/50 6000 1.5 CP-88 60/40 4500 1.3 CP-89 50/50 7500 1.5 CP-90 60/40 8000 1.6 樹脂 組成物 Mw Mw/Mn CP-91 60/40 6000 1.3 CP-92 50/50 4500 1.3 CP-93 50/50 5000 1,4 CP-94 50/50 3500 1.3 CP-95 40/30/30 4500 1.4 CP-96 50/45/5 5000 1.5 CP-97 20/80 10000 1.5 CP-98 30/70 9500 1.4 CP-99 20/80 7500 1.3 CP-100 100 5500 1.5 CP-101 80/20 5000 1.3 CP-102 70/30 8000 1.4 CP-103 80/20 9500 1.4 CP-104 80/20 7000 1.4 CP-105 80/20 5000 1.5 CP-106 100 10500 1.4 CP-107 100 8000 1.5 CP-108 90/10 9500 1.5 CP-109 40/40/20 5000 1.4Resin composition Mw Mw/Mn CP-61 60/40 8000 1.4 CP-62 50/50 7500 1.3 CP-63 50/50 8000 1.3 CP-64 50/50 7000 1.3 CP-65 50/50 8000 1.5 CP-66 60/40 6000 1.3 CP-67 70/30 8000 1.4 CP-68 100 8000 1.5 CP-69 50/50 9500 1.6 CP-70 50/50 7000 1.3 CP-71 100 6000 1.4 CP-72 100 8000 1.5 CP-73 100 7000 1.5 CP-74 50/50 6000 1.5 CP-75 70/30 6000 1.5 CP-76 50/50 4000 1.2 CP-77 60/40 6000 1.3 CP-78 80/20 8000 1.5 CP-79 50/50 6000 1.4 CP-80 80/20 7000 1.5 CP-81 100 5000 1.3 CP-82 50/50 4000 1.3 CP-83 50/50 6000 1.3 CP-84 30/30/40 6000 1.5 CP-85 50/50 8000 1.6 CP -86 50/50 7000 1.3 CP-87 50/50 6000 1.5 CP-88 60/40 4500 1.3 CP-89 50/50 7500 1.5 CP-90 60/40 8000 1.6 Resin composition Mw Mw/Mn CP-91 60 /40 6000 1.3 CP-92 50/50 4500 1.3 CP-93 50/50 5000 1,4 CP-94 50/50 3500 1.3 CP-95 40/30/30 4500 1.4 CP-96 50/45/5 5000 1.5 CP-97 20/80 10000 1.5 CP-98 30/70 9500 1.4 CP-99 20/80 7500 1.3 CP-100 100 5500 1.5 CP-101 80/20 5000 1.3 CP-102 70/30 8000 1.4 CP-103 80 /20 9500 1.4 CP-104 80/20 7000 1.4 CP-105 80/20 5000 1.5 CP-106 100 10500 1.4 CP-107 100 8000 1.5 CP-108 90/10 9500 1.5 CP-109 40/40/20 5000 1.4
關於從本發明之感光化射線或感放射線樹脂組成物形 成的薄膜,亦可在以光化射線或輻射照射(沉浸曝光)時, 藉由在光阻薄膜與鏡片間裝塡一具有折射率高於空氣的液 體(沉浸媒質)來進行該曝光。藉由此曝光,可提高解析度。 所使用的沉浸媒質可爲任何液體,只要其具有折射率高於 空氣,但是純水較佳。 下列描述在沉浸曝光中所使用的沉浸液體。 該沉浸液體爲可穿透在曝光波長下的光及具有儘可能 小的折射率溫度係數之液體較佳,以便減少投射在該光阻 薄膜上的光學影像變形。特別是,當該曝光光源爲ArF準 201033732 分子雷射(波長:193奈米)時’除了上述描述的觀點外,考 慮到容易可用度及容易運用性’使用水較佳。 再者,從可更提高折射率之觀點來看,亦可使用具有 折射率1.5或更高的媒質。此媒質可爲水溶液或有機溶劑。 在使用水作爲沉浸液體的實例中,爲了減少水的表面 張力及增加表面活性之目的,可加入小比率的添加劑(液 體),其中該添加劑不會溶解在晶圓上的光阻薄膜,同時在 鏡片元件的底處之光學塗層上僅提供可忽略的效應。該添 加劑爲具有折射率幾乎等於水的脂肪族醇較佳,及其特定 實施例包括甲醇、乙醇及異丙醇。藉由加入具有折射率幾 乎等於水的醇,甚至當在水中的醇組分蒸發及其含量濃度 改變時,可有利地讓整體液體的折射率改變變得非常小。 另一方面,若交互混合對193奈米的光不透明之物質或折 射率與水大大不同的雜質時,此會招致投射在光阻薄膜上 的光學影像變形。因此,所使用的水爲蒸餾水較佳。亦可 使用藉由讓蒸餾水進一步過濾過離子交換過濾器或其類似 物所獲得的純水》 作爲該沉浸液體的水之電阻爲18.3 MQcm或更大較 佳,及TOC(總有機碳)爲20 ppb或較少較佳。同樣地,該 水接受除氣處理較佳。 該微影蝕刻性能可藉由提高該沉浸液體的折射率提 高。從此觀點來看’可將用來提高折射率的添加劑加入至 水,或可使用氘水(D 2 0)取代水。 爲了防止該薄膜與沉浸液體直接接觸,可在由本發明 之組成物所形成的薄膜與沉浸液體間提供一略微可溶於沉 -162- 201033732 浸液體中的薄膜(於此之後,有時指爲"表面覆蓋,,)。該表面 覆蓋層所需要的功能爲對作爲光阻的覆蓋層之塗布層之適 應性、對特別在193奈米處的輻射透明、及在沉浸液體中 的溶解度有限。該表面覆蓋層不可與光阻混合且能均勻地 塗布作爲該光阻的覆蓋層較佳。 考慮到對193奈米的光之透明度,該表面覆蓋層爲不 大量包含芳香族的聚合物較佳,及其特定實施例包括烴聚 合物、丙烯酸酯聚合物、聚甲基丙烯酸、聚丙烯酸、聚乙 ¢) 烯醚、含矽聚合物及含氟聚合物。上述描述的疏水性樹脂 (C)及(CP)亦合適作爲該表面覆蓋層。若雜質從該表面覆蓋 層溶解出進入該沉浸液體中時,光學透鏡受污染。在此觀 點中,包含在該表面覆蓋層中的聚合物之殘餘的單體組分 之量較小較佳。 在剝除該表面覆蓋層上,可使用顯影劑或可分別地使 用離形劑。該離形劑爲較少滲透該薄膜之溶劑較佳。從該 剝除步驟可與薄膜的顯影步驟同步進行之觀點來看,該表 Q 面覆蓋層可以鹼性顯影劑剝離較佳,及爲了能夠以鹼性顯 影劑剝除,該表面覆蓋層呈酸性較佳,但是考慮到與該薄 膜不交互混合,該表面覆蓋層可爲中性或鹼性。 隨著在表面覆蓋層與沉浸液體間之折射率無差異,解 析度提高。在藉由ArF準分子雷射(波長:193奈米)曝光時 使用水作爲沉浸液體的實例中,該用於ArF沉浸曝光的表 面覆蓋層具有折射率接近沉浸液體之折射率較佳。從將折 射率製成接近沉浸液體的觀點來看,該表面覆蓋層包含氟 原子較佳。同樣地,考慮到透明度及折射率,該表面覆蓋 -163 - 201033732 層爲薄膜較佳》 該表面覆蓋層不可與薄膜混合及進一步不可與沉浸液 體混合較佳。從此觀點來看,當該沉浸液體爲水時,使用 於該表面覆蓋層之溶劑爲略微可溶於使用於本發明之組成 物的溶劑及不溶於水之媒質較佳。在該沉浸液體爲有機溶 劑的實例中,該表面覆蓋層可溶於水或不溶於水。 [4] 溶劑 可在藉由溶解上述描述的組分來製備該感光化射線或 感放射線樹脂組成物那時所使用之溶劑的實施例包括有機 溶劑,諸如羧酸伸烷基二醇單烷基醚酯、伸烷基二醇單烷 基醚、乳酸烷酯、烷氧基丙酸烷酯、環狀內酯(具有碳數4 至10較佳)、可包含環之單酮化合物(具有碳數4至10較 佳)、碳酸烷二酯、烷氧基醋酸烷酯及丙酮酸烷酯。 該羧酸伸烷基二醇單烷基醚酯的較佳實施例包括醋酸 丙二醇單甲基醚酯(PGMEA ;亦已知爲1-甲氧基-2-乙醯氧 基丙烷)、醋酸丙二醇單乙基醚酯、醋酸丙二醇單丙基醚 酯、醋酸丙二醇單丁基醚酯、丙酸丙二醇單甲基醚酯、丙 酸丙二醇單乙基醚酯、醋酸乙二醇單甲基醚酯及醋酸乙二 醇單乙基醚酯。 該伸烷基二醇單烷基醚的較佳實施例包括丙二醇單甲 基醚(PGME;亦已知爲1-甲氧基-2-丙醇)、丙二醇單乙基 醚、丙二醇單丙基醚、丙二醇單丁基醚、乙二醇單甲基醚 及乙二醇單乙基醚。 該乳酸烷酯的較佳實施例包括乳酸甲酯、乳酸乙酯、 乳酸丙酯及乳酸丁酯。 -164- 201033732 該烷氧基丙酸烷酯的較佳實施例包括3 -乙氧基丙酸乙 酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸甲酯及3-甲氧基丙 酸乙酯。 該環狀內酯的較佳實施例包括(3-丙內酯、β-丁內酯、γ-丁內酯、α·甲基-γ-丁內酯、β-甲基-γ-丁內酯、γ-戊內酯、γ-己內酯、γ-辛內酯及α-羥基-γ-丁內酯。 該可包含環的單酮化合物之較佳實施例包括2-丁酮、The film formed from the sensitized ray or the radiation-sensitive resin composition of the present invention may have a high refractive index by mounting between the photoresist film and the lens when irradiated with actinic rays or radiation (immersion exposure). The exposure is carried out in a liquid of air (immersion medium). By this exposure, the resolution can be improved. The immersion medium used may be any liquid as long as it has a refractive index higher than that of air, but pure water is preferred. The following describes the immersion liquid used in immersion exposure. The immersion liquid is preferably a liquid that can penetrate light at an exposure wavelength and a liquid having a temperature coefficient of refraction that is as small as possible in order to reduce optical image distortion projected on the photoresist film. In particular, when the exposure light source is an ArF quasi-201033732 molecular laser (wavelength: 193 nm), in addition to the above-described viewpoints, it is preferable to use water in consideration of ease of availability and ease of use. Further, a medium having a refractive index of 1.5 or higher can also be used from the viewpoint of further increasing the refractive index. This medium can be an aqueous solution or an organic solvent. In the case of using water as the immersion liquid, a small ratio of the additive (liquid) may be added for the purpose of reducing the surface tension of the water and increasing the surface activity, wherein the additive does not dissolve the photoresist film on the wafer while The optical coating at the bottom of the lens element provides only a negligible effect. The additive is preferably an aliphatic alcohol having a refractive index almost equal to water, and specific examples thereof include methanol, ethanol and isopropanol. By adding an alcohol having a refractive index almost equal to water, even when the alcohol component in water is evaporated and its content concentration is changed, it is advantageous to make the refractive index change of the entire liquid very small. On the other hand, if the 193 nm light opaque substance or an impurity having a refractive index greatly different from that of water is alternately mixed, this causes deformation of the optical image projected on the photoresist film. Therefore, the water used is preferably distilled water. It is also possible to use pure water obtained by further filtering distilled water through an ion exchange filter or the like. The electric resistance of water as the immersion liquid is preferably 18.3 MQcm or more, and the TOC (total organic carbon) is 20 Ppb or less is better. Similarly, the water is preferably subjected to a degassing treatment. The lithographic etching performance can be improved by increasing the refractive index of the immersion liquid. From this point of view, an additive for increasing the refractive index may be added to water, or water may be replaced with hydrophobic water (D 2 0). In order to prevent direct contact of the film with the immersion liquid, a film slightly soluble in the immersion liquid of the sinking-162-201033732 may be provided between the film formed by the composition of the present invention and the immersion liquid (hereinafter, sometimes referred to as "surface coverage,,). The function required for the surface covering layer is to be suitable for the coating layer of the coating as a photoresist, to be transparent to radiation particularly at 193 nm, and to have limited solubility in immersion liquid. The surface covering layer is not compatible with the photoresist and can be uniformly coated as a coating layer of the photoresist. In view of transparency to light of 193 nm, the surface covering layer is preferably a polymer which does not contain a large amount of aromatics, and specific examples thereof include a hydrocarbon polymer, an acrylate polymer, polymethacrylic acid, polyacrylic acid, Polyethyl hydrazine) Ether, hydrazine-containing polymer and fluoropolymer. The hydrophobic resins (C) and (CP) described above are also suitable as the surface covering layer. The optical lens is contaminated if impurities are dissolved from the surface covering into the immersion liquid. In this view, the amount of the residual monomer component of the polymer contained in the surface covering layer is preferably small. On the peeling of the surface covering layer, a developer may be used or a release agent may be used separately. The release agent is preferably a solvent which is less permeable to the film. From the viewpoint that the stripping step can be carried out in synchronism with the development step of the film, the surface Q cover layer can be preferably peeled off by an alkali developer, and the surface coat layer is acidic in order to be peeled off by an alkali developer. Preferably, the surface covering layer may be neutral or alkaline in view of the non-interactive mixing with the film. As the refractive index between the surface covering layer and the immersion liquid does not differ, the degree of resolution increases. In the case where water is used as the immersion liquid by exposure with an ArF excimer laser (wavelength: 193 nm), the surface covering layer for ArF immersion exposure has a refractive index close to that of the immersion liquid. From the viewpoint of making the refractive index close to the immersion liquid, the surface covering layer preferably contains a fluorine atom. Similarly, in view of transparency and refractive index, the surface covering is preferably a film of -163 - 201033732. The surface covering layer may not be mixed with the film and further preferably not mixed with the immersion liquid. From this point of view, when the immersion liquid is water, the solvent used for the surface coating layer is preferably a solvent which is slightly soluble in the composition used in the present invention and a water-insoluble medium. In the example where the immersion liquid is an organic solvent, the surface covering layer is soluble in water or insoluble in water. [4] Solvents Examples of a solvent which can be used at the time of preparing the photosensitive ray or radiation-sensitive resin composition by dissolving the components described above include an organic solvent such as a carboxylic acid alkylene glycol monoalkyl group. Ether ester, alkylene glycol monoalkyl ether, alkyl lactate, alkyl alkoxypropionate, cyclic lactone (preferably having a carbon number of 4 to 10), a monoketone compound which may contain a ring (having carbon) Preferably, the number is from 4 to 10, the alkylene carbonate, the alkyl alkoxyacetate and the alkyl pyruvate. Preferred examples of the carboxylic acid alkylene glycol monoalkyl ether ester include propylene glycol monomethyl ether acetate (PGMEA; also known as 1-methoxy-2-ethoxypropane), propylene glycol acetate Monoethyl ether ester, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, propylene glycol monomethyl ether ester, propionic acid propylene glycol monoethyl ether ester, ethylene glycol monomethyl ether ester and Ethylene glycol ethylene glycol monoethyl ether ester. Preferred examples of the alkylene glycol monoalkyl ether include propylene glycol monomethyl ether (PGME; also known as 1-methoxy-2-propanol), propylene glycol monoethyl ether, propylene glycol monopropyl group. Ether, propylene glycol monobutyl ether, ethylene glycol monomethyl ether and ethylene glycol monoethyl ether. Preferred examples of the lactate alkyl ester include methyl lactate, ethyl lactate, propyl lactate and butyl lactate. -164-201033732 Preferred examples of the alkoxypropionic acid alkyl ester include ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate and 3- Ethyl methoxypropionate. Preferred examples of the cyclic lactone include (3-propiolactone, β-butyrolactone, γ-butyrolactone, α-methyl-γ-butyrolactone, β-methyl-γ-butene Esters, γ-valerolactone, γ-caprolactone, γ-octanolactone and α-hydroxy-γ-butyrolactone. Preferred examples of the ring-containing monoketone compound include 2-butanone,
3 -甲基丁酮、頻哪酮(pinacolone)、2 -戊酮、3 -戊酮、3 -甲 基-2-戊酮、4-甲基-2-戊酮、2-甲基-3-戊酮、4,4-二甲基- 2-戊酮、2,4-二甲基-3-戊酮、2,2,4,4-四甲基_3-戊酮、2-己酮、 3-己酮、5-甲基-3-己酮、2-庚酮、3-庚酮、4-庚酮、2-甲基 -3-庚酮、5-甲基-3-庚酮、2,6-二甲基-4-庚酮、2-辛酮、3-辛酮、2 -壬酮、3 -壬酮、5 -壬酮、2 -癸酮、3 -癸酮、4 -癸酮、 5-己烯-2-酮、3-戊烯-2-酮、環戊酮、2-甲基環戊酮、3-甲 基環戊酮、2,2-二甲基環戊酮、2,4,4·三甲基環戊酮、環己 酮、3-甲基環己酮、4-甲基環己酮、4·乙基環己酮、2,2-二 甲基環己酮、2,6-二甲基環己酮、2,2,6-三甲基環己酮、環 庚酮、2-甲基環庚酮及3-甲基環庚酮。 該碳酸烷二酯的較佳實施例包括碳酸丙二酯、碳酸亞 乙烯酯、碳酸乙二酯及碳酸丁二酯。 該烷氧基醋酸烷酯的較佳實施例包括醋酸2-甲氧基乙 酯、醋酸2-乙氧基乙酯、醋酸2-(2 -乙氧基乙氧基)乙酯、 醋酸3-甲氧基-3-甲基丁酯及醋酸1-甲氧基-2-丙酯。 該丙酮酸烷酯的較佳實施例包括丙酮酸甲酯、丙酮酸 乙酯及丙酮酸丙酯。 -丄 OJ - 201033732 該可較佳使用的溶劑爲在普通溫度及大氣壓下具有沸 點130 °c或更高的溶劑,及其特定實施例包括環戊酮、γ-丁內酯、環己酮 '乳酸乙酯、醋酸乙二醇單乙基醚酯、醋 酸丙二醇單甲基醚酯、3-乙氧基丙酸乙酯、丙酮酸乙酯、 醋酸2-乙氧基乙酯、醋酸2-(2-乙氧基乙氧基)乙酯及碳酸 丙二酯。 在本發明中,可單獨使用這些溶劑之一或可組合著使 用二或更多種。 在本發明中,可使用藉由混合一在結構中包含羥基的 溶劑與一不包含羥基的溶劑所製備之混合溶劑作爲該有機 溶劑。 至於該包含羥基的溶劑與不包含羥基的溶劑,可適當 地選擇上述闡明作爲實施例之化合物,但是該包含羥基的 溶劑之較佳實施例包括伸烷基二醇單烷基醚及乳酸烷酯, 且丙二醇單甲基醚及乳酸乙酯更佳。該不包含羥基的溶劑 之較佳實施例包括醋酸伸烷基二醇單烷基醚酯、烷氧基丙 酸烷酯、可包含環的單酮化合物、環狀內酯及醋酸烷酯。 在這些當中,醋酸丙二醇單甲基醚酯、乙氧基丙酸乙酯、 2-庚酮、γ-丁內酯、環己酮及醋酸丁酯更佳,及醋酸丙二 醇單甲基醚酯、乙氧基丙酸乙酯及2-庚酮最佳。 該包含羥基的溶劑對該不包含羥基的溶劑之混合比率 (以質量計)從1/99至99/1 ’且從10/90至90/10較佳,從 20/80至6 0/40更佳。考慮到塗層均勻性,以50質量%或更 多之比率包含該不包含羥基的溶劑之混合溶劑較佳。 該溶劑包括醋酸丙二醇單甲基醚酯較佳,及醋酸丙二 -166- 201033732 醇單甲基醚酯的單一溶劑或二或更多種包含醋酸丙二醇單 甲基醚酯的溶劑之混合溶劑較佳。 [5] 鹼性化合物 本發明之感光化射線或感放射線樹脂組成物包括鹼性 化合物較佳,以減低性能隨著從曝光直到加熱的時效改變。 該鹼性化合物爲具有由下列式(A)至(E)所表示的結構 之化合物較佳。3-methylbutanone, pinacolone, 2-pentanone, 3-pentanone, 3-methyl-2-pentanone, 4-methyl-2-pentanone, 2-methyl-3 -pentanone, 4,4-dimethyl-2-pentanone, 2,4-dimethyl-3-pentanone, 2,2,4,4-tetramethyl-3-pentanone, 2-hexyl Ketone, 3-hexanone, 5-methyl-3-hexanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-methyl-3-heptanone, 5-methyl-3-glycol Ketone, 2,6-dimethyl-4-heptanone, 2-octanone, 3-octanone, 2-indanone, 3-indanone, 5-anthone, 2-indanone, 3-indanone, 4 -fluorenone, 5-hexen-2-one, 3-penten-2-one, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopentanone, 2,2-dimethyl Cyclopentanone, 2,4,4·trimethylcyclopentanone, cyclohexanone, 3-methylcyclohexanone, 4-methylcyclohexanone, 4·ethylcyclohexanone, 2,2-di Methylcyclohexanone, 2,6-dimethylcyclohexanone, 2,2,6-trimethylcyclohexanone, cycloheptanone, 2-methylcycloheptanone, and 3-methylcycloheptanone. Preferred examples of the alkylene carbonate include propylene carbonate, vinyl carbonate, ethylene carbonate, and butylene carbonate. Preferred examples of the alkoxyacetic acid alkyl ester include 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2-(2-ethoxyethoxy)ethyl acetate, and acetic acid 3- Methoxy-3-methylbutyl ester and 1-methoxy-2-propyl acetate. Preferred examples of the alkyl pyruvate include methyl pyruvate, ethyl pyruvate and propyl pyruvate. - 丄OJ - 201033732 The solvent which can be preferably used is a solvent having a boiling point of 130 ° C or higher at ordinary temperature and atmospheric pressure, and specific examples thereof include cyclopentanone, γ-butyrolactone, cyclohexanone Ethyl lactate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, ethyl 3-ethoxypropionate, ethyl pyruvate, 2-ethoxyethyl acetate, 2-(2-acetic acid) 2-ethoxyethoxy)ethyl ester and propylene carbonate. In the present invention, one of these solvents may be used alone or two or more may be used in combination. In the present invention, a mixed solvent prepared by mixing a solvent containing a hydroxyl group in the structure and a solvent containing no hydroxyl group can be used as the organic solvent. As the solvent containing a hydroxyl group and a solvent not containing a hydroxyl group, the compounds exemplified above as the examples can be appropriately selected, but preferred examples of the solvent containing a hydroxyl group include an alkylene glycol monoalkyl ether and an alkyl lactate. , and propylene glycol monomethyl ether and ethyl lactate are more preferred. Preferred examples of the solvent containing no hydroxyl group include an alkylene glycol monoalkyl ether acetate, an alkoxypropionic acid alkyl ester, a monoketone compound which may contain a ring, a cyclic lactone, and an alkyl acetate. Among these, propylene glycol monomethyl ether acetate, ethyl ethoxy propionate, 2-heptanone, γ-butyrolactone, cyclohexanone and butyl acetate are preferred, and propylene glycol monomethyl ether acetate, Ethyl ethoxypropionate and 2-heptanone are most preferred. The mixing ratio of the solvent containing a hydroxyl group to the solvent containing no hydroxyl group (by mass) is preferably from 1/99 to 99/1 ' and preferably from 10/90 to 90/10, and from 20/80 to 60/40. Better. In view of uniformity of the coating layer, a mixed solvent containing the solvent containing no hydroxyl group in a ratio of 50% by mass or more is preferred. The solvent comprises propylene glycol monomethyl ether acetate preferably, and a mixed solvent of a single solvent of propylene di-166-201033732 alcohol monomethyl ether ester or two or more solvents containing propylene glycol monomethyl ether acetate. good. [5] Basic compound The sensitized ray or radiation sensitive resin composition of the present invention preferably comprises a basic compound to reduce the performance as a function of aging from exposure to heating. The basic compound is preferably a compound having a structure represented by the following formulas (A) to (E).
4-i (B)4-i (B)
在式(A)及(E)中,R2()<)、R2G1及R2e2各者可相同或不 同,其代表氫原子、烷基(具有碳數1至20較佳)、環烷基 (具有碳數3至20較佳)或芳基(具有碳數6至20);及R2C)1 與r2G2可結合在一起以形成一環。r2°3、r2()4、r2G5及r2Q6 各者可相同或不同,其代表具有碳數1至20的烷基。 至於該烷基,具有取代基的烷基爲具有碳數1至20的 q 胺烷基、具有碳數1至20的羥烷基或具有碳數1至20的 氰基院基較佳。 在式(A)及(E)中的烷基未經取代更佳。 該化合物的較佳實施例包括胍、胺基吡咯烷、吡嗖、 吡唑啉、哌畊、胺基嗎福啉、胺基烷基嗎福啉及哌啶。該 化合物的更佳實施例包括具有咪唑結構、二吖雙環結構、 氫氧化鎗結構、羧酸鑰結構、三烷基胺結構、苯胺結構或 吡啶結構的化合物;具有羥基及/或醚鍵的烷基胺衍生物: 及具有羥基及/或醚鍵的苯胺衍生物。 -167 - 201033732 該具有咪唑結構的化合物之實施例包括咪唑、2,4,5-三苯基咪唑、苯并咪唑及2-苯基苯并咪唑。該具有二吖雙 環結構的化合物之實施例包括1,4-二吖雙環[2,2,2]辛烷、 1,5-二吖雙環[4,3,0]壬-5-烯及1,8-二吖雙環[5,4,0]十一-7-烯。該具有氫氧化鑰結構的化合物之實施例包括氫氧化四 丁基銨、氫氧化三芳基锍、氫氧化苯醯甲锍及具有2-側氧 烷基的氫氧化锍,特別是,氫氧化三苯基锍、氫氧化三(三 級丁基苯基)锍、氫氧化雙(三級丁基苯基)鎖、氫氧化苯甲 醯甲基噻吩鎗及氫氧化2-側氧丙基噻吩鎗。該具有羧酸鑰 結構的化合物之實施例包括該具有氫氧化鑰結構的化合物 之陰離子部分變成羧酸鹽的化合物,諸如醋酸酯、金剛烷 -1-羧酸酯及羧酸全氟烷酯。該具有三烷基胺結構的化合物 之實施例包括三(正丁基)胺及三(正辛基)胺。該苯胺化合物 的實施例包括2,6-二異丙基苯胺、N,N-二甲基苯胺、Ν,Ν-二丁基苯胺及Ν,Ν-二己基苯胺。該具有羥基及/或醚鍵的烷 基胺衍生物之實施例包括乙醇胺、二乙醇胺、三乙醇胺、 Ν-苯基二乙醇胺及三(甲氧基乙氧基乙基)胺。該具有羥基 及/或醚鍵的苯胺衍生物之實施例包括Ν,Ν_雙(羥乙基)苯 胺。 其它的較佳鹼性化合物包括含苯氧基的胺化合物、含 苯氧基的銨鹽化合物、含磺酸酯基團的胺化合物及含磺酸 酯基團的銨鹽化合物。 在該含苯氧基的胺化合物、含苯氧基的銨鹽化合物、 含磺酸酯基團的胺化合物及含磺酸酯基團的銨鹽化合物 中,至少一個烷基鍵結至氮原子較佳。同樣地,在烷基鏈 -168- 201033732 中包含氧原子較佳,以形成氧伸烷基。在分子內的氧伸烷 基數目爲1或更多,且從3至9較佳,從4至6更佳。在 氧伸烷基當中,-CH2CH20- 、 -CH(CH3)CH20-及 -CH2CH2CH20-之結構較佳。 該含苯氧基的胺化合物、含苯氧基的銨鹽化合物、含 磺酸酯基團的胺化合物及含磺酸酯基團的銨鹽化合物之特 定實施例包括(但不限於)闌明在美國專利申請案公告 200 7/0 224539 的[0066]中之化合物(C 1-1)至(C3-3)。 0 可單獨使用這些鹼性化合物之一,或可組合著使用其 二或更多種。 所使用的鹼性化合物之量通常從0.001至10質量%, 從0.01至5質量%較佳,以該感光化射線或感放射線樹脂 組成物的固體含量爲準。 [6] 具有能藉由酸作用離去的基團之低分子化合物(D) 本發明之組成物可包括一具有能藉由酸作用離去的基 團之低分子化合物(D)(有時指爲"組分(D)")。該能藉由酸作 Q 用離去的基團無特別限制,但是乙縮醛基團、碳酸鹽基團、 胺基甲酸酯基團、三級酯基團、三級羥基或半胺醛 (hemiaminal)醚基團較佳,胺基甲酸酯基團或半胺醛醚基團 更佳。 該具有能藉由酸作用離去的基團之低分子化合物的分 子量從100至1,000較佳,從100至700更佳,從100至 5 0 0又更佳。 在該具有能藉由酸作用離去的基團之低分子化合物具 有三級酯結構的實例中,該化合物爲由下列式(la)所表示 -169 - 201033732 的羧酸酯或不飽和羧酸酯較佳:In the formulae (A) and (E), R2()<), R2G1 and R2e2 may be the same or different and represent a hydrogen atom, an alkyl group (having preferably a carbon number of 1 to 20), a cycloalkyl group ( It has preferably a carbon number of 3 to 20 or an aryl group (having a carbon number of 6 to 20); and R2C)1 and r2G2 may be bonded together to form a ring. Each of r2°3, r2()4, r2G5 and r2Q6 may be the same or different and represents an alkyl group having 1 to 20 carbon atoms. As the alkyl group, the alkyl group having a substituent is preferably an amino group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms or a cyano group having 1 to 20 carbon atoms. The alkyl group in the formulae (A) and (E) is preferably unsubstituted. Preferred examples of the compound include anthracene, aminopyrrolidine, pyridinium, pyrazoline, piperazine, aminofenorphline, aminoalkylmorpholine and piperidine. More preferred embodiments of the compound include compounds having an imidazole structure, a dioxindole structure, a oxidizer gun structure, a carboxylate structure, a trialkylamine structure, an aniline structure or a pyridine structure; an alkane having a hydroxyl group and/or an ether bond; Amine derivatives: and aniline derivatives having a hydroxyl group and/or an ether bond. -167 - 201033732 Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, and 2-phenylbenzimidazole. Examples of the compound having a diterpene bicyclic structure include 1,4-dioxabicyclo[2,2,2]octane, 1,5-dioxabicyclo[4,3,0]non-5-ene and 1 , 8-biindole bicyclo[5,4,0]undec-7-ene. Examples of the compound having a hydrazone structure include tetrabutylammonium hydroxide, triarylphosphonium hydroxide, benzoguanidine hydrazide, and cesium hydroxide having a 2-sided oxyalkyl group, particularly, hydrazine hydroxide Phenylhydrazine, tris(tert-butylphenyl)phosphonium hydroxide, bis(tri-butylphenyl) hydroxide, benzylhydrazine methylthiophene gun and 2-oxopropylthiophene hydroxide . Examples of the compound having a carboxylate structure include a compound in which the anion portion of the compound having a KOH structure becomes a carboxylate such as acetate, adamantane-1-carboxylate, and perfluoroalkyl carboxylic acid ester. Examples of the compound having a trialkylamine structure include tri(n-butyl)amine and tris(n-octyl)amine. Examples of the aniline compound include 2,6-diisopropylaniline, N,N-dimethylaniline, anthracene, fluorene-dibutylaniline and anthracene, fluorene-dihexylaniline. Examples of the alkylamine derivative having a hydroxyl group and/or an ether bond include ethanolamine, diethanolamine, triethanolamine, hydrazine-phenyldiethanolamine, and tris(methoxyethoxyethyl)amine. Examples of the aniline derivative having a hydroxyl group and/or an ether bond include ruthenium, osmium-bis(hydroxyethyl)aniline. Other preferred basic compounds include a phenoxy-containing amine compound, a phenoxy-containing ammonium salt compound, a sulfonate group-containing amine compound, and a sulfonate group-containing ammonium salt compound. In the phenoxy-containing amine compound, the phenoxy-containing ammonium salt compound, the sulfonate group-containing amine compound, and the sulfonate group-containing ammonium salt compound, at least one alkyl group is bonded to the nitrogen atom Preferably. Similarly, it is preferred to include an oxygen atom in the alkyl chain -168 to 201033732 to form an oxygen alkyl group. The number of alkylene groups in the molecule is 1 or more, and preferably from 3 to 9, more preferably from 4 to 6. Among the oxygen alkyl groups, the structures of -CH2CH20-, -CH(CH3)CH20- and -CH2CH2CH20- are preferred. Specific examples of the phenoxy-containing amine compound, the phenoxy-containing ammonium salt compound, the sulfonate group-containing amine compound, and the sulfonate group-containing ammonium salt compound include, but are not limited to, Compounds (C 1-1) to (C3-3) in [0066] of U.S. Patent Application Publication No. 200 7/0 224,539. 0 One of these basic compounds may be used alone, or two or more of them may be used in combination. The amount of the basic compound to be used is usually from 0.001 to 10% by mass, preferably from 0.01 to 5% by mass, based on the solid content of the sensitized ray or the radiation-sensitive resin composition. [6] Low molecular compound (D) having a group capable of leaving by acid action The composition of the present invention may comprise a low molecular compound (D) having a group capable of leaving by an acid action (sometimes Refers to "component(D)"). The group which can be removed by the acid for Q is not particularly limited, but an acetal group, a carbonate group, a urethane group, a tertiary ester group, a tertiary hydroxy group or a semi-amino aldehyde. The (hemiaminal) ether group is preferred, and the urethane group or the semi-amine aldehyde ether group is more preferred. The molecular weight of the low molecular compound having a group which can be removed by an acid is preferably from 100 to 1,000, more preferably from 100 to 700, still more preferably from 100 to 50,000. In the example in which the low molecular compound having a group capable of leaving by acid action has a tertiary ester structure, the compound is a carboxylic acid ester or an unsaturated carboxylic acid represented by the following formula (la) -169 - 201033732 Ester is preferred:
在式(1 a)中,每個R1各自獨立地代表單價脂環烴基團 (具有碳數4至20較佳)或其衍生物或烷基(具有碳數1至4 較佳),同時至少一個R1爲脂環烴基團或其衍生物;或同 時任何二個R1彼此結合與它們鍵結的碳原子一起形成二 價脂環烴基團(具有碳數4至20較佳)或其衍生物,剩餘的 Ri代表烷基(具有碳數1至4較佳)或單價脂環烴基團(具有 碳數4至20較佳)或其衍生物。 每個X各自獨立地代表氫原子或羥基,及至少一個X 爲羥基。 A代表單鍵或二價連結基團,且單鍵或由-D-COO-所表 示的基團較佳(其中D代表伸烷基(具有碳數1至4較佳))。 在式(la)中,該作爲A的二價連結基團之實施例包括 亞甲基、亞甲基羰基、亞甲基羰基氧基、伸乙基、伸乙基 羰基、伸乙基羰基氧基、伸丙基、伸丙基羰基及伸丙基羰 基氧基,且亞甲基羰基氧基較佳。 在式(la)中,該R1的單價脂環烴基團(具有碳數4至 20較佳)及藉由任何二個R1彼此結合所形成的二價脂環烴 基團(具有碳數4至20較佳)之實施例包括由衍生自降萡 烷、三環癸烷、四環十二烷、金剛烷或環烷(諸如環丁烷、 環戊烷、環己烷、環庚烷及環辛烷)的脂環族環所組成之基 團;及該上述描述由脂環族環所組成的基團由一或多種或 -170- 201033732 一或多組具有碳數1至4的烷基(諸如,甲基、乙基、正丙 基、異丙基、正丁基、2-甲基丙基、1-甲基丙基及三級丁 基)及環烷基取代之基團。在這些脂環烴基團當中,由衍生 自降萡烷、三環癸烷、四環十二烷、金剛烷、環戊烷或環 己烷的脂環族環所組成之基團及該由脂環族環組成的基團 經由上述烷基取代之基團較佳。 該脂環烴基團的衍生物之實施例包括具有一或多種或 一或多組取代基的基團,其中該取代基有諸如羥基;羧基; 0 側氧基團(即,=0);具有碳數1至4的羥烷基,例如,羥 甲基、1·羥乙基、2-羥乙基、1-羥丙基、2-羥丙基、3-羥丙 基、1-羥丁基、2-羥丁基、3-羥丁基及4-羥丁基;具有碳 數1至4的烷氧基,例如,甲氧基、乙氧基、正丙氧基、 異丙氧基、正丁氧基、2-甲基丙氧基、1-甲基丙氧基及三 級丁氧基;及具有碳數2至5的氰基烷基,例如,氰甲基、 2-氰乙基、3-氰丙基及4-氰丁基。在這些取代基當中,羥 基、羧基、羥甲基、氰基及氰甲基較佳。In the formula (1a), each R1 each independently represents a monovalent alicyclic hydrocarbon group (having preferably 4 to 20 carbon atoms) or a derivative thereof or an alkyl group (having preferably 1 to 4 carbon atoms) while at least One R1 is an alicyclic hydrocarbon group or a derivative thereof; or at the same time, any two R1 groups are bonded to each other to form a divalent alicyclic hydrocarbon group (having preferably having a carbon number of 4 to 20) or a derivative thereof, together with the carbon atom to which they are bonded. The remaining Ri represents an alkyl group (preferably having a carbon number of 1 to 4) or a monovalent alicyclic hydrocarbon group (having a carbon number of 4 to 20 is preferred) or a derivative thereof. Each X independently represents a hydrogen atom or a hydroxyl group, and at least one X is a hydroxyl group. A represents a single bond or a divalent linking group, and a single bond or a group represented by -D-COO- is preferred (wherein D represents an alkylene group (having preferably a carbon number of 1 to 4)). In the formula (la), examples of the divalent linking group as A include a methylene group, a methylene carbonyl group, a methylene carbonyloxy group, an ethyl group, an ethyl carbonyl group, and an ethyl carbonyl group. The group is a propyl group, a propyl carbonyl group and a propyl carbonyloxy group, and a methylene carbonyl group is preferred. In the formula (la), the monovalent alicyclic hydrocarbon group of R1 (preferably having a carbon number of 4 to 20) and a divalent alicyclic hydrocarbon group formed by bonding any two R1 to each other (having a carbon number of 4 to 20) Preferred embodiments include those derived from norbornane, tricyclodecane, tetracyclododecane, adamantane or cycloalkane (such as cyclobutane, cyclopentane, cyclohexane, cycloheptane, and cyclooctane). a group consisting of an alicyclic ring of an alkane; and the above-described group consisting of an alicyclic ring consisting of one or more or -170-201033732 one or more groups of alkyl groups having a carbon number of 1 to 4 ( For example, methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropyl and tert-butyl) and cycloalkyl substituted groups. Among these alicyclic hydrocarbon groups, a group consisting of an alicyclic ring derived from norbornane, tricyclodecane, tetracyclododecane, adamantane, cyclopentane or cyclohexane, and the lipid The group consisting of a cyclocyclic ring is preferably a group substituted with the above alkyl group. Examples of the derivative of the alicyclic hydrocarbon group include a group having one or more or one or more groups of substituents, wherein the substituent has a hydroxyl group such as a hydroxyl group; a carboxyl group; a 0 side oxygen group (i.e., =0); A hydroxyalkyl group having 1 to 4 carbon atoms, for example, hydroxymethyl, hydroxyethyl, 2-hydroxyethyl, 1-hydroxypropyl, 2-hydroxypropyl, 3-hydroxypropyl, 1-hydroxybutyl Base, 2-hydroxybutyl, 3-hydroxybutyl and 4-hydroxybutyl; alkoxy having 1 to 4 carbon atoms, for example, methoxy, ethoxy, n-propoxy, isopropoxy , n-butoxy, 2-methylpropoxy, 1-methylpropoxy and tert-butoxy; and cyanoalkyl having 2 to 5 carbon atoms, for example, cyanomethyl, 2-cyano Ethyl, 3-cyanopropyl and 4-cyanobutyl. Among these substituents, a hydroxyl group, a carboxyl group, a methylol group, a cyano group and a cyanomethyl group are preferred.
該1的烷基之實施例包括具有碳數1至4的院基,諸 如甲基、乙基、正丙基、異丙基、正丁基、2-甲基丙基、 1-甲基丙基及三級丁基。在這些烷基當中,甲基、乙基、 正丙基及異丙基較佳。 特定的較佳實施例包括下列化合物。 -171- 201033732Examples of the alkyl group of this 1 include a hospital having a carbon number of 1 to 4, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropane. Base and tertiary butyl. Among these alkyl groups, a methyl group, an ethyl group, a n-propyl group and an isopropyl group are preferred. Specific preferred embodiments include the following compounds. -171- 201033732
-172- 201033732 在該低分子化合物爲不飽和羧酸酯的實例中,該化合 物爲(甲基)丙烯酸酯較佳。下列提出該具有三級烷基作爲 能藉由酸作用離去的基團之(甲基)丙烯酸三級酯的特定實 施例,但是本發明不限於此。 (在該等式中,Rx代表H、CH3、CF3或CH2OH,及Rxa 與Rxb各者代表具有碳數1至4的烷基。)-172- 201033732 In the case where the low molecular compound is an unsaturated carboxylic acid ester, the compound is preferably a (meth) acrylate. A specific embodiment of the (meth)acrylic acid tertiary ester having a tertiary alkyl group as a group which can be removed by an acid is proposed below, but the invention is not limited thereto. (In the equation, Rx represents H, CH3, CF3 or CH2OH, and Rxa and Rxb each represent an alkyl group having 1 to 4 carbon atoms.)
-173 - 201033732 至於該具有能藉由酸作用離去的基團之低分子化合物 (D),可使用可商業購得的產物或該化合物可藉由已知的方 法合成。 同樣地,在氮原子上具有能藉由酸作用離去的基團之 胺衍生物作爲該組分D較佳。 該組分D可在氮原子上具有含保護基團的胺基甲酸酯 基團。構成該胺基甲酸酯基團的保護基團可由下列式(d-l) 表不: Ο R,-173 - 201033732 As for the low molecular compound (D) having a group capable of leaving by acid action, a commercially available product can be used or the compound can be synthesized by a known method. Similarly, an amine derivative having a group capable of leaving by an acid action on a nitrogen atom is preferable as the component D. This component D may have a protecting group-containing urethane group on a nitrogen atom. The protecting group constituting the urethane group can be represented by the following formula (d-l): Ο R,
(d-1) 在式(d-Ι)中,每個R’各自獨立地代表氫原子、線性、 分支或環烷基、芳基、芳烷基或烷氧基烷基。每個R’可與 每個其它R’結合以形成一環。 R’爲線性或分支烷基、環烷基或芳基較佳,線性或分 支烷基或環烷基更佳。 下列提出該由式(d-l)所表示的基團之特定結構。 201033732 'Λχ 人>〇 Λ>ο vVc-υΛό>^ \Λ〇^0 vV(0 yl〇jP vVP vV^ /。;£^ Λ^Ρ Λ^κ> Λ^φ(d-1) In the formula (d-Ι), each R' each independently represents a hydrogen atom, a linear, branched or cycloalkyl group, an aryl group, an arylalkyl group or an alkoxyalkyl group. Each R' can be combined with each other R' to form a ring. R' is preferably a linear or branched alkyl group, a cycloalkyl group or an aryl group, and a linear or branched alkyl group or a cycloalkyl group is more preferred. The specific structure of the group represented by the formula (d-1) is proposed below. 201033732 'Λχ人>〇 Λ>ο vVc-υΛό>^ \Λ〇^0 vV(0 yl〇jP vVP vV^ /.;£^ Λ^Ρ Λ^κ> Λ^φ
、义入兮、\命入Righteousness
ν^Χφ yV^J) \乂。^^ νΛ). nA〇Mvq,Λ^0| ^°^〇)、人ν^Χφ yV^J) \乂. ^^ νΛ). nA〇Mvq,Λ^0| ^°^〇), person
201033732 該組分D亦可藉由任意結合上述描述的鹼性化合物與 由式(d-Ι)所表示的結構來組成。 該組分D爲具有由下列式(A)所表示的結構之化合物 更佳。 附隨地,該組分D可爲與上述描述的鹼性化合物相應 之化合物’只要其爲一具有能藉由酸作用離去的基團之低 分子化合物。201033732 This component D can also be composed by any combination of the basic compound described above and the structure represented by the formula (d-Ι). This component D is more preferably a compound having a structure represented by the following formula (A). Incidentally, the component D may be a compound corresponding to the basic compound described above as long as it is a low molecular compound having a group which can be removed by an acid action.
在式(A)中’每個Ra各自獨立地代表氫原子、院基、 環院基、芳基或芳院基。同樣地,當n = 2時,二個Ra可相 同或不同;及二個Ra可彼此結合以形成一雜環烴基團(具 有碳數20或較少較佳)或其衍生物。 每個Rb各自獨立地代表氫原子、烷基、環烷基、芳基 或芳院基。 至少二個Rb可結合以形成脂環烴基團、芳香烴基團、 雜環烴基團或其衍生物。 η代表整數〇至2,m代表整數1至3及n + m = 3。 在式(A)中’該Ra及Rb的烷基、環烷基、芳基及芳烷 基可由下列官能基代替,諸如:羥基、氰基、胺基、吡咯 啶基、哌啶基、嗎福啉基及側氧基團、烷氧基或鹵素原子。 該R的烷基、環烷基、芳基及芳烷基(這些烷基、環烷 基、芳基及芳烷基可由上述描述之官能基、烷氧基或鹵素 -176- 201033732 原子取代)之實施例包括: 衍生自線性或分支烷烴的基團,諸如甲烷、乙烷、丙 烷、丁烷、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、十一 烷及十二烷;及該衍生自烷烴的基團由一或多種或一或多 組環烷基(諸如環丁基、環戊基及環己基)取代之基團; 衍生自環烷(諸如環丁烷、環戊烷、環己烷、環庚烷、 環辛烷、降萡烷、金剛烷及降金剛烷)的基團;及該衍生自 環烷的基團由一或多種或一或多組線性或分支烷基(諸如 0 甲基、乙基、正丙基、異丙基、正丁基、2-甲基丙基、1_ 甲基丙基及三級丁基)取代之基團; 衍生自芳香族化合物(諸如苯、萘及蒽)的基團;及該 衍生自芳香族化合物的基團由一或多種或一或多組線性或 分支烷基(諸如甲基、乙基、正丙基、異丙基、正丁基、2-甲基丙基、1-甲基丙基及三級丁基)取代之基團; 衍生自雜環化合物(諸如吡咯啶、哌啶、嗎福啉、四氫 呋喃、四氫哌喃、吲哚、吲哚啉、喹啉、全氫喹啉、吲唑 0 及苯并咪唑)的基團;及該衍生自雜環化合物的基團由一或 多種或一或多組線性或分支烷基或芳香族化合物衍生出的 基團取代之基團;該衍生自線性或分支烷烴的基團或該衍 生自環烷的基團由一或多種或一或多組芳香族化合物衍生 出的基團(諸如苯基、萘基及蒽基)取代之基團;及上述的 取代基由一官能基(諸如羥基、氰基、胺基、吡咯啶基、哌 啶基、嗎福啉基及側氧基團)取代的基團。 該藉由Ra彼此結合所形成的二價雜環烴基團(具有碳 數1至20較佳)或其衍生物之實施例包括衍生自下列雜環 ^ 177 ^ 201033732 化合物的基團,諸如吡咯旋、哌旋、嗎福啉、1,4,5,6 -四氮 嘧啶、1,2,3,4 -四氫喹啉、匕2,3,6-四氫吡啶、升哌畊 (homopiperazine)、4-吖苯并咪哩、苯并三唑、5-吖苯并三 唑、1H-1,2,3-三唑、1,4,7-三吖環壬烷、四唑、7-吖吲哚、 吲唑、苯并咪唑、咪唑并[l,2-a]吡啶、(lS,4S)-( + )-2,5-二 吖雙環[2.2.1]庚烷、1,5,7-三吖雙環[4.4.0]癸-5-烯、吲哚、 吲哚啉、1,2,3,4·四氫喹喏啉、全氫喹啉及1,5,9-三吖環十 二烷;及該衍生自雜環化合物的基團由一或多種或一或多 組下列基團取代之基團:線性或分支烷烴衍生出的基團、 環烷衍生出的基團、芳香族化合物衍生出的基團、雜環化 合物衍生出的基團及官能基.(諸如羥基、氰基、胺基、吡咯 啶基、哌啶基、嗎福啉基及側氧基團)。 在本發明中特別佳的特定實施例包括Ν-三級丁氧基羰 基二正辛胺、Ν-三級丁氧基羰基二正壬胺、Ν-三級丁氧基 羰基二正癸胺、Ν·三級丁氧基羰基二環己胺、Ν_三級丁氧 基羰基-1-金剛烷基胺、Ν-三級丁氧基羰基_2_金剛烷基胺、 Ν -三級丁氧基羰基-Ν-甲基-1-金剛烷基胺、(s)-(-)-l-(三級 丁氧基羰基)-2-吡咯啶甲醇、+ 三級丁氧基羰 基)-2-吡咯啶甲醇、N-三級丁氧基羰基-4-羥基哌啶、N-三 級丁氧基羰基吡咯啶、N-三級丁氧基羰基嗎福啉、N_三級 丁氧基锻基脈哄、N,N-雙三級丁氧基羰基-丨_金剛烷基胺、 N,N-雙二級丁氧基羰基_N_甲基-金剛烷基胺、N_三級丁 氧基羰基- 4,4’-二胺基二苯基甲烷、ν,ν’ — 雙三級丁氧基羰 基己二胺' N,N,N’,N’-四三級丁氧基羰基己二胺、n,N,_雙 二級丁氧基幾基-1,7 -二胺基庚烷、n,N,_雙三級丁氧基羰基 -178- 201033732 _1,8-二胺基辛烷、;^,;^,_雙三級丁氧基羰基_1,9_二胺基壬 院、N,N’-雙二級丁氧基羰基- no•二胺基癸烷、n,n,雙三 級丁氧基羰基-1,12 -二胺基十二烷、n,N,-雙三級丁氧基羰 基- 4,4’-二胺基二苯基甲烷、N_三級丁氧基羰基苯并咪唑、 N-三級丁氧基羰基-2-甲基苯并咪唑及Ν·三級丁氧基羰基 -2 -苯基苯并咪唑。 下列提出在本發明中特別佳的組分D之特定實施例, 但是本發明不限於此。 〇In the formula (A), each Ra independently represents a hydrogen atom, a hospital group, a ring-based group, an aryl group or an aromatic group. Similarly, when n = 2, the two Ras may be the same or different; and the two Ras may be bonded to each other to form a heterocycloalkyl group (having a carbon number of 20 or less) or a derivative thereof. Each Rb independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aromatic group. At least two Rbs may be combined to form an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic hydrocarbon group or a derivative thereof. η represents an integer 〇 to 2, and m represents an integer of 1 to 3 and n + m = 3. In the formula (A), the alkyl, cycloalkyl, aryl and aralkyl groups of Ra and Rb may be replaced by the following functional groups such as a hydroxyl group, a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group, or the like. A porphyrin group and a pendant oxygen group, an alkoxy group or a halogen atom. The alkyl, cycloalkyl, aryl and aralkyl groups of R (these alkyl, cycloalkyl, aryl and aralkyl groups may be substituted by a functional group, alkoxy or halogen-176-201033732 atom as described above) Examples include: groups derived from linear or branched alkanes such as methane, ethane, propane, butane, pentane, hexane, heptane, octane, decane, decane, undecane and twelve And a group derived from an alkane substituted by one or more or one or more groups of cycloalkyl groups such as cyclobutyl, cyclopentyl and cyclohexyl; derived from a cycloalkane such as cyclobutane, a group of cyclopentane, cyclohexane, cycloheptane, cyclooctane, norbornane, adamantane, and adamantane; and the group derived from cycloalkane is one or more or one or more sets of linear Or a group substituted with a branched alkyl group such as 0 methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropyl and tert-butyl; derived from a group of an aromatic compound such as benzene, naphthalene and anthracene; and the group derived from the aromatic compound is one or more or one or more sets of linear or a group substituted with a branched alkyl group such as methyl, ethyl, n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropyl and tert-butyl; a group of a ring compound such as pyrrolidine, piperidine, morphine, tetrahydrofuran, tetrahydropyran, hydrazine, porphyrin, quinoline, perhydroquinoline, carbazole 0 and benzimidazole; a group derived from a group derived from one or more or one or more groups of linear or branched alkyl or aromatic compounds; the group derived from a linear or branched alkane or derived from a group in which a cycloalkane group is substituted with a group derived from one or more or one or more groups of aromatic compounds, such as a phenyl group, a naphthyl group, and an anthracenyl group; and the above substituent is a monofunctional group such as a hydroxyl group. a group substituted with a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group, a morpholinyl group, and a pendant oxy group. Examples of the divalent heterocyclic hydrocarbon group (having preferably having a carbon number of 1 to 20) or a derivative thereof formed by bonding Ra to each other include a group derived from a compound of the following heterocyclic compound 177 ^ 201033732, such as pyrrole , piperazine, morpholine, 1,4,5,6-tetrazine, 1,2,3,4-tetrahydroquinoline, ruthenium 2,3,6-tetrahydropyridine, homopiperazine , 4-indolobenzimidazole, benzotriazole, 5-nonylbenzotriazole, 1H-1,2,3-triazole, 1,4,7-trioxancyclodecane, tetrazole, 7- Anthracene, carbazole, benzimidazole, imidazo[l,2-a]pyridine, (lS,4S)-( + )-2,5-dioxabicyclo[2.2.1]heptane, 1,5 , 7-triterpenic ring [4.4.0] 癸-5-ene, anthracene, porphyrin, 1,2,3,4·tetrahydroquinoxaline, perhydroquinoline and 1,5,9-three Anthracene-dodecane; and a group derived from a heterocyclic compound substituted by one or more or one or more groups of the following groups: a group derived from a linear or branched alkane, a group derived from a cycloalkane a group derived from an aromatic compound, a group derived from a heterocyclic compound, and a functional group. (such as a hydroxyl group, a cyano group, an amine group, a pyrrolidinyl group, a piperidinyl group) , morpholinyl and pendant oxygen groups). Particular embodiments which are particularly preferred in the present invention include fluorene-tertiary butoxycarbonyldi-n-octylamine, fluorene-tertiary butoxycarbonyldi-n-decylamine, fluorene-tertiary butoxycarbonyldi-n-decylamine, Ν· Tert-butyloxycarbonyldicyclohexylamine, Ν_tertiary butoxycarbonyl-1-adamantylamine, fluorene-tertiary butoxycarbonyl_2-adamantylamine, Ν-tertiary Oxycarbonyl-indole-methyl-1-adamantylamine, (s)-(-)-l-(tertiary butoxycarbonyl)-2-pyrrolidinemethanol, + tert-butoxycarbonyl)- 2-pyrrolidinemethanol, N-tertiary butoxycarbonyl-4-hydroxypiperidine, N-tertiary butoxycarbonylpyrrolidine, N-tertiary butoxycarbonylmorphine, N-tertiary butoxide Base forging ruthenium, N,N-bis-tertiary butoxycarbonyl-fluorene-adamantylamine, N,N-bis-di-butoxycarbonyl-N-methyl-adamantylamine, N_three Butoxycarbonyl-4,4'-diaminodiphenylmethane, ν,ν'-bis-tertiary butoxycarbonylhexamethylenediamine N,N,N',N'-tetra-tertiary butoxy Hexyl hexamethylenediamine, n,N,_di-di-butoxybutyryl-1,7-diaminoheptane, n,N,_dual tertiary tert-butoxycarbonyl-178- 201033732 _1,8 -diaminooctane,; ^,; ^, _ di-tertiary butoxycarbonyl-1,9-diamino fluorene, N,N'-bis-di-butoxycarbonyl-no•diamine癸, n, n, bis-tertiary butoxycarbonyl-1,12-diaminododecane, n,N,-di-tertiary butoxycarbonyl- 4,4'-diaminodiphenyl Methane, N_tertiary butoxycarbonylbenzimidazole, N-tertiary butoxycarbonyl-2-methylbenzimidazole, and ruthenium tert-butoxycarbonyl-2-phenylbenzimidazole. Specific embodiments of component D which are particularly preferred in the present invention are set forth below, but the invention is not limited thereto. 〇
179 - 201033732179 - 201033732
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、CN ο ο (D-52) (D-53) (D-54) (D*5£) 201033732 由式(A)所表示的化合物可藉由描述例如在”在有機合 成中的保護基(Protective Groups in Organic Synthesis),第 4版”中的方法,從可商業購得的胺容易地合成。最一般的 方法爲造成二碳酸酯或鹵甲酸酯在可商業購得的胺上作用 以獲得該化合物的方法。在該等式中,X代表鹵素原子; 及Ra與Rb具有與在式(A)中的Ra與Rb相同的意義。, CN ο ο (D-52) (D-53) (D-54) (D*5£) 201033732 The compound represented by the formula (A) can be described by, for example, "protecting groups in organic synthesis" The method of Protective Groups in Organic Synthesis, 4th Edition, is readily synthesized from commercially available amines. The most general method is a method of causing a dicarbonate or a haloformate to act on a commercially available amine to obtain the compound. In the equation, X represents a halogen atom; and Ra and Rb have the same meanings as Ra and Rb in the formula (A).
在本發明中,可單獨使用一種具有能藉由酸作用離去 的基團之低分子化合物(D),或可混合及使用二或更多種該 化合物。 在本發明中,該具有能藉由酸作用離去的基團之低分 子化合物(D)之使用量通常從0.001至20質量%,從0.001 至1 0質量%較佳’從0 · 〇 1至5質量%更佳,以該組成物與 上述描述的鹼性化合物結合之全部固體化合物爲準。 在該組成物中所使用、在該酸產生劑與該具有能藉由 酸作用離去的基團之低分子化合物(D)間之比率爲酸產生 劑/[具有能藉由酸作用離去的基團之低分子化合物(1)) +鹼 性化合物](以莫耳計)=從2.5至300較佳。也就是說,考慮 -182- 201033732 到靈敏度及解析度’該莫耳比率爲2.5或更大較佳;及從 抑制解析度由於光阻圖案在曝露至熱處理後隨著時效增厚 而減低的觀點來看,300或較少較佳。該酸產生劑/[具有能 藉由酸作用離去的基團之低分子化合物(D)+鹼性化合 物](以莫耳計)從5.0至2〇〇更佳,從7.0至150又更佳。 [7] 界面活性劑 本發明之感光化射線或感放射線樹脂組成物可或可不 進一步包含界面活性劑,及在包含界面活性劑的實例中, 0 該界面活性劑爲含氟及/或含矽界面活性劑(含氟界面活性 劑、含矽界面活性劑及包含氟原子與矽原子二者的界面活 性劑)之任何一種或其二或更多種較佳。 藉由將上述描述的界面活性劑倂入本發明之感光化射 線或感放射線樹脂組成物中,當使用25 0奈米或較短(特別 是22 0奈米或較短)的曝光光源時,此可提供一就靈敏度、 解析度及黏附力和較少顯影缺陷而論具有好的性能之光阻 圖案。In the present invention, a low molecular compound (D) having a group capable of leaving by an acid action may be used alone, or two or more kinds of the compounds may be mixed and used. In the present invention, the low molecular compound (D) having a group capable of leaving by acid action is usually used in an amount of from 0.001 to 20% by mass, preferably from 0.001 to 10% by mass, from 0 to 〇1. More preferably, it is 5% by mass, based on the total solid compound in which the composition is combined with the basic compound described above. The ratio between the acid generator and the low molecular compound (D) having a group capable of leaving by acid action is an acid generator / [having the ability to leave by acid action) Low molecular compound (1)) + basic compound (in terms of moles) = preferably from 2.5 to 300. That is to say, considering -182-201033732 to sensitivity and resolution 'the molar ratio is preferably 2.5 or more; and from the viewpoint of suppressing the resolution due to the reduction of the photoresist pattern with the aging thickening after exposure to heat treatment Look, 300 or less is better. The acid generator / [low molecular compound (D) + basic compound having a group capable of leaving by acid action (in terms of moles) is more preferably from 5.0 to 2 Torr, and from 7.0 to 150. good. [7] Surfactant The sensitized ray or radiation sensitive resin composition of the present invention may or may not further comprise a surfactant, and in the case of including a surfactant, 0 the surfactant is fluorine-containing and/or ruthenium-containing Any one or two or more of a surfactant (a fluorine-containing surfactant, a ruthenium-containing surfactant, and a surfactant containing both a fluorine atom and a ruthenium atom) is preferable. By incorporating the above-described surfactant into the sensitized ray or radiation sensitive resin composition of the present invention, when an exposure light source of 25 nm or shorter (especially 22 nm or shorter) is used, This provides a photoresist pattern with good performance in terms of sensitivity, resolution and adhesion and less development defects.
另一方面,當讓該界面活性劑的加入量變少(例如,設 定至10 ppm或較少)時,更成功地達成組分(C)對表面之不 均勻分布,以便該光阻薄膜表面可變成更疏水性及可提高 水在沉浸曝光時的流動性。 該含氟及/或含矽界面活性劑的實施例包括描述在下 列中的界面活性劑:JP-A-62-36663 、 JP-A-61-226746 、 JP-A-6 1 -226745 、 JP-A-62 - 1 70950 、 JP-A-63 - 34540 、 JP-A-7-23 0 1 65 、 JP-A-8-62834 、 JP-A-9-54432 、 JP-A-9-5988、 JP-A-2002-277862 及美國專利 5,405,720、 -183 - 201033732 5,360,692' 5,529,881' 5,296,330' 5,436,098' 5,576,143' 5,294,511及5,824,451。下列可商業購得的界面活性劑每 種亦可如其所是般使用。 可使用之可商業購得的界面活性劑之實施例包括含氟 界面活性劑及含矽界面活性劑,諸如愛夫脫普 (EFtop)EF301 及 EF3 03 (由新秋田化成(股)(Shin-AkiTa KaseiK. K.)製造);浮羅雷德(Florad)FC430、431 及 4430(由 住友 3M 公司(Sumitomo 3M I n c.)製造);美加費斯 (Megaface)F171、 F173、 F176、 F189、 F113、 F110、 F177、 F120及 R08(由大日本油墨及化學公司(Dainippon Ink & Chemicals,Inc.)製造);蛇浮隆(Surflon)S- 3 82、SC101、 102、103、104、105及106(由朝日玻璃有限公司(Asahi Glass Co·,Ltd.)製造);錯伊梭(Tr〇ysol)S-3 66(由錯伊化學(Troy Chemical)製造);GF-300及GF-150(由東亞合成化學工業 有限公司(Toagosei Chemical Industry Co.,Ltd.)製造);蛇 浮隆S-393(由清美化學有限公司(Seimi Chemical Co.,Ltd.) 製造);愛夫脫普 EF121、EF122A' EF122B > RF122C > EF125M、EF135M、EF35 卜 EF352、EF8(H、EF802 及 EF601(由 傑姆柯公司(JEMCO Inc.)製造);PF6 3 6、PF6 5 6、PF63 2 0 及 PF6520(由歐諾瓦(OMNOVA)製造);及 FTX-204G、 208G、 218G、 230G、 204D、 208D、 212D、 218D 及 222D(由 尼歐斯有限公司(NEOS Co.,Ltd.)製造)。此外,亦可使用 聚矽氧烷聚合物 KP-341(由信越化學有限公司(Shin-Etsu Chemical Co.,Ltd.)製造)作爲該含矽界面活性劑。 至於該界面活性劑,除了這些已知的界面活性劑外, -184- 201033732 可使用一使用具有衍生自氟-脂肪族化合物之氟-脂肪族基 團的聚合物之界面活性劑,其中該氟-脂肪族化合物藉由調 節聚合方法(亦稱爲調聚物方法)或寡聚化方法(亦稱爲寡聚 物方法)製造。該氟-脂肪族化合物可藉由描述在 JP-A-2002-90991的[0241]及[0242]中之方法合成》該具有 氟-脂肪族基團的共聚物亦可爲含氟-脂肪族基團的單體與 (聚(氧伸烷基))丙烯酸酯及/或(聚(氧伸烷基))甲基丙烯酸 酯之共聚物。On the other hand, when the amount of the surfactant added is reduced (for example, to 10 ppm or less), the uneven distribution of the component (C) to the surface is more successfully achieved so that the surface of the photoresist film can be It becomes more hydrophobic and improves the fluidity of water during immersion exposure. Examples of the fluorine-containing and/or rhodium-containing surfactant include surfactants described in JP-A-62-36663, JP-A-61-226746, JP-A-6 1 -226745, JP -A-62 - 1 70950 , JP-A-63 - 34540 , JP-A-7-23 0 1 65 , JP-A-8-62834 , JP-A-9-54432 , JP-A-9-5988 JP-A-2002-277862 and U.S. Patents 5,405,720, -183 - 201033732 5,360,692' 5,529,881' 5,296,330' 5,436,098' 5,576,143' 5,294,511 and 5,824,451. The following commercially available surfactants can also be used as they are. Examples of commercially available surfactants that can be used include fluorosurfactants and cerium-containing surfactants such as EFtop EF301 and EF3 03 (by Shin-Akita Chemicals Co., Ltd.) AkiTa Kasei K. K.)); Florad FC430, 431 and 4430 (manufactured by Sumitomo 3M I n c.); Megaface F171, F173, F176, F189 , F113, F110, F177, F120 and R08 (manufactured by Dainippon Ink & Chemicals, Inc.); Surflon S- 3 82, SC101, 102, 103, 104, 105 and 106 (manufactured by Asahi Glass Co., Ltd.); Tr〇ysol S-3 66 (manufactured by Troy Chemical); GF-300 and GF -150 (manufactured by Toagosei Chemical Industry Co., Ltd.); Serpentoon S-393 (manufactured by Seimi Chemical Co., Ltd.); Love EF121, EF122A' EF122B > RF122C > EF125M, EF135M, EF35 EF352, EF8 (H, EF802 and E F601 (manufactured by JEMCO Inc.); PF6 3 6, PF6 5 6, PF63 2 0 and PF6520 (manufactured by OMNOVA); and FTX-204G, 208G, 218G, 230G, 204D, 208D, 212D, 218D, and 222D (manufactured by NEOS Co., Ltd.) In addition, polyoxyalkylene polymer KP-341 (by Shin-Etsu Chemical Co., Ltd. (Shin- Etsu Chemical Co., Ltd.) is used as the cerium-containing surfactant. As for the surfactant, in addition to these known surfactants, -184-201033732 can be used with a derivative derived from a fluorine-aliphatic compound. a surfactant of a polymer of a fluorine-aliphatic group, wherein the fluorine-aliphatic compound is adjusted by a polymerization method (also referred to as a telomerization method) or an oligomerization method (also referred to as an oligomer method) The fluorine-aliphatic compound can be synthesized by the method described in [0241] and [0242] of JP-A-2002-90991. The copolymer having a fluorine-aliphatic group may also be fluorine-containing. Monomer of aliphatic groups with (poly(oxyalkylene)) acrylate and/or (poly(oxyalkylene) )) Of a copolymer of methyl acrylate.
至於該可商業購得的界面活性劑,其實施例包括美加 費斯 F178、 F-470、 F-473、 F-475、 F-476 及 F-472(由大曰 本油墨及化學公司製造),及進一步包括含C6F13基團的丙 烯酸酯(或甲基丙烯酸酯)與(聚(氧伸烷基))丙烯酸酯(或甲 基丙烯酸酯)之共聚物,及含C3F7基團的丙烯酸酯(或甲基 丙烯酸酯)與(聚(氧伸乙基))丙烯酸酯(或甲基丙烯酸酯)及 一(聚(氧伸丙基))丙烯酸酯(或甲基丙烯酸酯)之共聚物。 在本發明中,亦可使用除了含氟及/或含矽界面活性劑 外的界面活性劑。其特定的實施例包括非離子界面活性 劑,諸如聚氧伸乙基烷基醚類(例如’聚氧伸乙基月桂基 醚、聚氧伸乙基硬脂基醚)、聚氧伸乙基烷基芳基醚類(例 如,聚氧伸乙基辛基酚醚、聚氧伸乙基壬基酚醚)、聚氧伸 乙基•聚氧伸丙基嵌段共聚物、脫水山梨糖醇脂肪酸酯類 (例如,單月桂酸脫水山梨糖醇酯、單棕櫚酸脫水山梨糖醇 酯、單硬脂酸脫水山梨糖醇酯、三硬脂酸脫水山梨糖醇 酯)、及聚氧伸乙基脫水山梨糖醇脂肪酸酯類(例如’聚氧 伸乙基單月桂酸脫水山梨糖醇酯、聚氧伸乙基單棕櫚酸脫 -185 - 201033732 水山梨糖醇酯、聚氧伸乙基單硬脂酸脫水山梨糖醇酯、聚 氧伸乙基三油酸脫水山梨糖醇酯、聚氧伸乙基三硬脂酸脫 水山梨糖醇酯)。 可單獨使用這些界面活性劑之一或可組合著使用其一 些 ° 所使用的界面活性劑之量從0.000 1至2質量%較佳, 從0.0 01至1質量%更佳,以該感光化射線或感放射線樹脂 組成物的全部量爲準(排除溶劑)。 [8] 羧酸鎗 本發明之感光化射線或感放射線樹脂組成物可包含羧 酸鐵。該羧酸鑰爲銚鹽或锍鹽較佳。該陰離子部分爲具有 碳數1至30的羧酸線性、分支、單環或多環烷基酯陰離子 較佳,上述羧酸鹽陰離子具有烷基部分或全部經氟取代更 佳。該烷基鏈可包含氧原子。由於此架構,保證對220奈 米或較短的光之穿透度、提高靈敏度及解析度、及改良孤 立/密集偏差及曝光邊緣。 該經氟取代的羧酸鹽陰離子之實施例包括氟醋酸鹽、 二氟醋酸鹽、三氟醋酸鹽、五氟丙酸鹽、七氟丁酸鹽、九 氟戊酸鹽、全氟十二烷酸鹽、全氟十三烷酸鹽、全氟環己 烷羧酸鹽及2,2-雙三氟甲基丙酸鹽陰離子。 該羧酸鑰在該組成物中的含量通常從0.1至20胃胃 %,從0.5至1 0質量%較佳,從1至7質量%更佳,以該組 成物的全部固體含量爲準。 [9] 具有分子量3,000或較少及能藉由酸作用分解以增 加在鹼性顯影劑中的溶解度之溶解抑制化合物 -186- 201033732 該具有分子量3,000或較少且能藉由酸作用分解以增 加在鹼性顯影劑中的溶解度之溶解抑制化合物(於此之 後,有時指爲"溶解抑制化合物")爲包含可酸分解的基團(諸 如描述在SPIE會議記錄,2724,3 5 5 ( 1 996)中之含可酸分 解的基團之膽酸衍生物)的脂環族或脂肪族化合物較佳,如 此不會降低對220奈米或較短的光之穿透度。該可酸分解 的基團及脂環族結構之實施例與上述描述有關樹脂(A)的 那些相同。 在藉由KrF準分子雷射或以電子束照射來曝光本發明 之感光化射線或感放射線樹脂組成物的實例中,該溶解抑 制化合物具有酚化合物的酚羥基由可酸分解的基團取代之 結構較佳。該酚化合物爲包含從1至9個酚骨架的化合物 較佳,從2至6個酚骨架更佳。 所加入的溶解抑制化合物之量從3至5 0質量%較佳, 從5至40質量%更佳,以該感光化射線或感放射線樹脂組 成物的固體含量爲準。 下列提出該溶解抑制化合物的特定實施例,但是本發 明不限於此。As for the commercially available surfactants, examples thereof include Mecca F178, F-470, F-473, F-475, F-476 and F-472 (manufactured by Otsuka Ink and Chemical Co., Ltd.) And further comprising a copolymer of a C6F13 group-containing acrylate (or methacrylate) and (poly(oxyalkylene)) acrylate (or methacrylate), and an acrylate having a C3F7 group ( Or a copolymer of (methacrylate) and (poly(oxyethylidene)) acrylate (or methacrylate) and a (poly(oxypropyl)) acrylate (or methacrylate). In the present invention, a surfactant other than the fluorine-containing and/or barium-containing surfactant may also be used. Specific examples thereof include nonionic surfactants such as polyoxyethylene ethyl ethers (e.g., 'polyoxyethylene ethyl lauryl ether, polyoxyethyl stearyl ether), polyoxyethyl ether Alkyl aryl ethers (for example, polyoxyethylene ethyl octyl phenol ether, polyoxyethyl decyl phenol ether), polyoxyethylene ethyl polyoxyalkylene block copolymer, sorbitan Fatty acid esters (for example, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan tristearate), and polyoxygen Dehydrated sorbitan fatty acid esters (eg 'polyoxy-extended ethyl laurate sorbitan ester, polyoxy-extended ethyl monopalmitate de-185 - 201033732 sorbitan ester, polyoxy-extension ethyl single Sorbitan stearate, polysorbate sorbitan monoethyl trioleate, polysorbate ethyl sorbitan sorbitan ester). The amount of the surfactant which can be used alone or in combination with some of the surfactants is preferably from 0.000 1 to 2% by mass, more preferably from 0.01 to 1% by mass, based on the sensitized ray. Or the total amount of the radiation sensitive resin composition shall prevail (excluding the solvent). [8] Carboxylic acid gun The sensitized ray or radiation sensitive resin composition of the present invention may contain iron carboxylic acid. The carboxylate is preferably a phosphonium salt or a phosphonium salt. The anion moiety is preferably a linear, branched, monocyclic or polycyclic alkyl ester anion having a carbon number of 1 to 30, and the above carboxylate anion has a part or all of an alkyl group which is more preferably substituted by fluorine. The alkyl chain can comprise an oxygen atom. Thanks to this architecture, transparency to 220 nm or shorter light, improved sensitivity and resolution, and improved solitary/dense deviation and exposure edges are guaranteed. Examples of the fluorine-substituted carboxylate anion include fluoroacetate, difluoroacetate, trifluoroacetate, pentafluoropropionate, heptafluorobutyrate, nonafluoropentanoate, perfluorododecane An acid salt, a perfluorotridecanoate, a perfluorocyclohexane carboxylate, and a 2,2-bistrifluoromethylpropionate anion. The content of the carboxylate in the composition is usually from 0.1 to 20% of stomach, from 0.5 to 10% by mass, more preferably from 1 to 7% by mass, based on the total solid content of the composition. [9] a dissolution inhibiting compound having a molecular weight of 3,000 or less and capable of decomposing by an acid action to increase solubility in an alkaline developer -186-201033732 which has a molecular weight of 3,000 or less and can be decomposed by an acid action to increase The solubility-inhibiting compound in the solubility of an alkaline developer (hereinafter, sometimes referred to as "dissolution inhibiting compound") is a group containing an acid-decomposable group (such as described in the SPIE meeting record, 2724, 3 5 5 The alicyclic or aliphatic compound of the cholic acid derivative containing an acid-decomposable group in (1 996) is preferred so as not to reduce the transmittance to light of 220 nm or shorter. Examples of the acid-decomposable group and the alicyclic structure are the same as those described above for the resin (A). In the example of exposing the sensitized ray or radiation sensitive resin composition of the present invention by KrF excimer laser or by electron beam irradiation, the solvo-inhibiting compound has a phenolic hydroxyl group of a phenol compound substituted by an acid-decomposable group. The structure is better. The phenol compound is preferably a compound containing from 1 to 9 phenol skeletons, more preferably from 2 to 6 phenol skeletons. The amount of the dissolution inhibiting compound to be added is preferably from 3 to 50% by mass, more preferably from 5 to 40% by mass, based on the solid content of the sensitized ray or the radiation sensitive resin composition. Specific examples of the dissolution inhibiting compound are set forth below, but the present invention is not limited thereto.
[1〇]其它添加劑 -187 - 201033732 若須要時’本發明之感光化射線或感放射線樹脂組成 物可進一步包括例如染料、塑化劑、光敏劑、光吸收劑及 用來加速溶解在顯影劑中之化合物(例如,具有分子量 1,000或較少的酸化合物,或含羧基的脂環族或脂肪族化合 物)。 該具有分子量1,〇〇〇或較少的酚化合物可由熟習該項 技術者,藉由參照描述例如在 JP-A-4-122938、 JP-A-2-28531、美國專利4,916,210及歐洲專利219294中 的方法容易地合成》 該含羧基的脂環族或脂肪族化合物之特定實施例包括 (但不限於)具有類固醇結構的羧酸衍生物(諸如膽酸、去氧 基膽酸及石膽酸)、金剛烷羧酸衍生物、金剛烷二羧酸、環 己烷羧酸及環己烷二羧酸。 [11]圖案形成方法 從提高解析度的觀點來看,以膜厚30至250奈米(從 30至200奈米更佳)使用本發明之感光化射線或感放射線 樹脂組成物較佳。可藉由將在該感光化射線或感放射線樹 脂組成物中的固體含量濃度設定至適當範圍,因此授予適 當黏度及提高塗布能力及薄膜形成性質來獲得此膜厚。 在該感光化射線或感放射線樹脂組成物中的全部固體 含量濃度通常從1至10質量%,且從1至8.0質量%較佳, 從1.0至6.0質量%更佳。 本發明之感光化射線或感放射線樹脂組成物藉由下列 方式使用:將上述組分溶解在預定的有機溶劑中(在上述描 述的混合溶劑中較佳)’過濾溶液及將其塗布在如下的預定 -188- 201033732 載體上。使用於過濾的過濾器爲由聚四氟乙烯、聚乙 耐綸製得、具有孔洞尺寸0.1微米或較小的過濾器較 〇 . 〇 5微米或較小更佳,0.0 3微米或較小又更佳。 例如,當使用在精密積體電路元件之製造中時, 適當的塗布方法(諸如離心塗布機或塗布機),將該感 射線或感放射線樹脂組成物塗布在此一基材(例如,已 以矽/二氧化矽的基材)上,及乾燥以形成感光膜(光 膜)。 經由預定的遮罩,以光化射線或輻射照射該感光 然後較佳經烘烤(加熱),接受顯影及沖洗,藉此可獲 的圖案。 該光化射線或輻射的實施例包括紅外光、可見光 外光、遠紫外光、極紫外光、X射線及電子束,但是 射爲波長250奈米或較短的遠紫外光較佳,220奈米 短更佳,從1至200奈米又更佳。其特定實施例包括 準分子雷射(2 48奈米)、ArF準分子雷射(193奈米)、 分子雷射(157奈米)及X射線,且ArF準分子雷射、 分子雷射及EUV(13奈米)較佳。 在形成該感光膜前,可在該基材上預先塗布提供 射薄膜。 所使用的抗反射薄膜可爲無機膜型式,諸如鈦、 化鈦、氮化鈦、氧化鉻、碳及非晶矽;或由光吸收劑 合物材料組成之有機膜型式。至於該有機抗反射薄膜 此亦可使用可商業購得的有機抗反射薄膜,諸如由布 科學有限公司(Brewer Science, Inc.)製造的DUV30系 烯或 佳, 藉由 光化 塗布 阻薄 膜, 得好 、紫 該輻 或較 KrF F2準 F2準 抗反 二氧 及聚 ,於 魯爾 列及 -189- 201033732 DUV-40系列,及由施普莉有限公司(ShiPley Co.,Ltd,)製 造的 AR-2、AR-3 及 AR-5。 至於在顯影步驟中所使用的驗性顯影劑’通常使用四 級銨鹽(典型爲氫氧化四甲基銨)’但是除此之外’亦可使 用無機鹼、一級胺、二級胺、三級胺、醇胺、環狀胺或其 類似物之鹼性水溶液。 再者,此外可加入適當量的醇類及界面活性劑每種 後,使用此鹼性顯影劑。 該鹼性顯影劑的鹼濃度通常從0·1至20質量%。 該鹼性顯影劑的pH通常從1〇.〇至15.0。 同樣地,此外可加入適當量之醇類及界面活性劑每種 後,使用上述描述的鹼性水溶液。 至於該洗液,使用純水,及此外可加入適當量之界面 活性劑後使用該純水。 在顯影或沖洗後,可藉由超臨界流體處理來進行移除 黏附在圖案上的顯影劑或洗液。 實施例 本發明藉由參照實施例更詳細地描述在下列,但是本 發明應該不解釋爲限制於此。 <合成實施例1 :樹脂(C-8)之合成> 藉由描述在國際公告案號WO 07/037213,細則中的方 法來合成下列化合物(1 )。 在35.00克的化合物(1)中,加入150.00克的水及進一 步加入27.30克的NaOH。在加熱及迴流條件下攪拌該混合 物9小時’藉由加入鹽酸將其製成酸性,然後以醋酸乙酯 -190- 201033732 萃取。結合及濃縮有機層,以獲得36.90克的化合物(2)(產 率:9 3%)。 1H-NMR(400 MHz , 在(CD3)2CO 中): δ(ρριη)= 1.5 6- 1.5 9( 1 H),1.68-1.72( 1 H),2.13-2.15(1H), 2·13-2.47(2Η),3.49-3.51(1Η),3·68(1Η)’ 4.45-4.46(1Η)。 在20.00克的化合物(2)中,加入200毫升的CHC13及 進一步加入50.90克的1,1,1,3,3,3 -六氟異丙基醇與30.00 克的4-二甲基胺基吡啶。攪拌所獲得的該混合物,及對所 0 產生的溶液加入22.00克的1_乙基_3_(3_二甲基胺基丙基) 碳二醯亞胺。在攪拌3小時後,將該反應溶液加入至500 毫升的1NHC1及終止反應。進一步以1NHC1清洗該有機 層,然後以水清洗及濃縮,以獲得30.00克的化合物(3)(產 率:85%)。 1H-NMR(400 MHz ,在(CD3)2CO 中): 6(ppm)=l .62(1 Η) > 1.9 1 -1.9 5 (1 Η ) , 2.2 1 - 2.2 4 ( 1 Η), 2.45 -2.5 3 (2Η) > 3.6 1 - 3.6 3 (1 Η ) . 3.76(1Η)- 4.3 2 - 4.5 8 ( 1 Η) > Ο 6·46-6.53( 1 Η)。 在15.00克的化合物(3)中,加入300.〇〇克的甲苯及進 一步加入3.70克的甲基丙烯酸與4.20克的對-甲苯磺酸單 水合物。迴流所獲得的混合物1 5小時,同時藉由共沸性移 除所產生的水。濃縮該反應溶液’及藉由管柱層析法純化 濃縮物’以獲得11.70克的化合物(4)(產率:65%卜 1 H-NMR(4〇〇 MHz ’ 在(CD3)2CO 中): 5(ppm)= 1 . 76- 1 . 79( 1 Η) , 1 . 9 3 (3 Η) ’ 2.1 6 - 2.2 2 (2 Η), 2.57-2.61(1Η)> 2.76-2.81(2Η)> 3.73-3.74(1Η)> 4.73(1Η)> -191 - 201033732 4·84-4·86(1Η),5.69- 5,70( 1 Η),6·12(1Η),6.50-6.56(1 H)。[1〇] Other Additives-187 - 201033732 If necessary, the photosensitive ray or radiation sensitive resin composition of the present invention may further include, for example, a dye, a plasticizer, a photosensitizer, a light absorbing agent, and an accelerated dissolution agent in the developer. a compound (for example, an acid compound having a molecular weight of 1,000 or less, or an alicyclic or aliphatic compound having a carboxyl group). The phenolic compound having a molecular weight of 1, hydrazine or less can be used by those skilled in the art, and by way of example, for example, in JP-A-4-122938, JP-A-2-28531, U.S. Patent 4,916,210, and European Patent 219,294. The method of the present invention is readily synthesized. Specific examples of the carboxyl group-containing alicyclic or aliphatic compound include, but are not limited to, carboxylic acid derivatives having a steroid structure (such as cholic acid, deoxycholic acid, and lithocholic acid). ), adamantanecarboxylic acid derivative, adamantane dicarboxylic acid, cyclohexanecarboxylic acid, and cyclohexane dicarboxylic acid. [11] Pattern forming method From the viewpoint of improving the resolution, it is preferred to use the sensitized ray or radiation sensitive resin composition of the present invention at a film thickness of 30 to 250 nm (more preferably from 30 to 200 nm). The film thickness can be obtained by setting the solid content concentration in the sensitized ray or the radiation sensitive resin composition to an appropriate range, thereby imparting appropriate viscosity and improving coating ability and film forming property. The total solid content concentration in the sensitized ray or radiation sensitive resin composition is usually from 1 to 10% by mass, and preferably from 1 to 8.0% by mass, more preferably from 1.0 to 6.0% by mass. The sensitized ray or radiation sensitive resin composition of the present invention is used by dissolving the above components in a predetermined organic solvent (preferably in the above-described mixed solvent) 'filtering solution and coating it as follows Scheduled -188- 201033732 on the carrier. The filter used for filtration is a filter made of polytetrafluoroethylene or polyethylene, having a pore size of 0.1 μm or less, 〇 5 μm or less, preferably 0.0 3 μm or smaller. Better. For example, when used in the manufacture of precision integrated circuit components, a suitable coating method such as a centrifugal coater or a coater is applied to the substrate or the radiation sensitive resin composition (for example, On the substrate of bismuth/cerium oxide), and dried to form a photosensitive film (light film). The sensitization is irradiated with actinic radiation or radiation via a predetermined mask and then preferably baked (heated), subjected to development and rinsing, whereby a pattern is obtained. Examples of the actinic ray or radiation include infrared light, visible light, far ultraviolet light, extreme ultraviolet light, X-ray, and electron beam, but the far ultraviolet light having a wavelength of 250 nm or shorter is preferably 220 nm. The rice is shorter and better, from 1 to 200 nm. Specific examples thereof include excimer lasers (2 48 nm), ArF excimer lasers (193 nm), molecular lasers (157 nm), and X-rays, and ArF excimer lasers, molecular lasers, and EUV (13 nm) is preferred. The provided film may be preliminarily coated on the substrate before the formation of the photosensitive film. The antireflection film used may be an inorganic film type such as titanium, titanium, titanium nitride, chromium oxide, carbon, and amorphous germanium; or an organic film type composed of a light absorbing agent material. As the organic anti-reflective film, a commercially available organic anti-reflective film such as DUV30-based olefin manufactured by Brewer Science, Inc., or a light-resistant resist film can be used. , purple or spokes or KrF F2 quasi-F2 quasi-anti-diox and poly, in Ruhrer and -189-201033732 DUV-40 series, and AR manufactured by ShiPley Co., Ltd. -2, AR-3 and AR-5. As for the test developer used in the development step, a quaternary ammonium salt (typically tetramethylammonium hydroxide) is usually used 'but other than this, an inorganic base, a primary amine, a secondary amine, and the like may be used. An aqueous alkaline solution of a primary amine, an alcoholamine, a cyclic amine or the like. Further, in addition, an alkaline developer may be used after adding an appropriate amount of an alcohol and a surfactant. The alkali concentration of the alkaline developer is usually from 0.1 to 20% by mass. The pH of the alkaline developer is usually from 1 Torr to 15.0. Similarly, an aqueous alkaline solution as described above may be used after each of an appropriate amount of an alcohol and a surfactant may be added. As the washing liquid, pure water is used, and further, an appropriate amount of the surfactant may be added to use the pure water. After development or rinsing, the developer or lotion adhered to the pattern can be removed by supercritical fluid treatment. EXAMPLES The invention is described in more detail below with reference to examples, but the invention should not be construed as being limited thereto. <Synthesis Example 1: Synthesis of Resin (C-8)> The following compound (1) was synthesized by the method described in the International Patent Publication No. WO 07/037213, the specification. In 35.00 g of the compound (1), 150.00 g of water was added and 27.30 g of NaOH was further added. The mixture was stirred under heating and reflux for 9 hours. It was made acidic by the addition of hydrochloric acid, and then extracted with ethyl acetate - 190 - 201033732. The organic layer was combined and concentrated to obtain 36.90 g of compound (2) (yield: 9 3%). 1H-NMR (400 MHz, in (CD3)2CO): δ(ρριη)= 1.5 6- 1.5 9( 1 H), 1.68-1.72 ( 1 H), 2.13-2.15(1H), 2·13-2.47 (2Η), 3.49-3.51 (1Η), 3.68 (1Η)' 4.45-4.46 (1Η). In 20.00 g of the compound (2), 200 ml of CHC13 was added, and further 50.90 g of 1,1,1,3,3,3-hexafluoroisopropyl alcohol and 30.00 g of 4-dimethylamino group were added. Pyridine. The obtained mixture was stirred, and 22.00 g of 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide was added to the solution resulting from the 0. After stirring for 3 hours, the reaction solution was added to 500 ml of 1NHC1 and the reaction was terminated. The organic layer was further washed with 1NHC1, then washed with water and concentrated to obtain 30.00 g of Compound (3) (yield: 85%). 1H-NMR (400 MHz in (CD3)2CO): 6 (ppm) = 1.62 (1 Η) > 1.9 1 -1.9 5 (1 Η ) , 2.2 1 - 2.2 4 ( 1 Η), 2.45 -2.5 3 (2Η) > 3.6 1 - 3.6 3 (1 Η ) . 3.76(1Η)- 4.3 2 - 4.5 8 ( 1 Η) > Ο 6·46-6.53 ( 1 Η). In 15.00 g of the compound (3), 300. g of toluene was added, and 3.70 g of methacrylic acid and 4.20 g of p-toluenesulfonic acid monohydrate were further added. The obtained mixture was refluxed for 15 hours while removing the produced water by azeotropy. Concentration of the reaction solution 'and purification of the concentrate by column chromatography' to obtain 11.70 g of the compound (4) (yield: 65% b 1 H-NMR (4 〇〇 MHz ' in (CD3) 2CO) : 5(ppm)= 1 . 76- 1 . 79( 1 Η) , 1 . 9 3 (3 Η) ' 2.1 6 - 2.2 2 (2 Η), 2.57-2.61 (1Η)> 2.76-2.81 (2Η )>3.73-3.74(1Η)>4.73(1Η)> -191 - 201033732 4·84-4·86(1Η), 5.69- 5,70( 1 Η),6·12(1Η), 6.50 -6.56 (1 H).
在氮環境中,將6.4克的醋酸丙二醇單甲基醚酯 (PGMEA)充入三頸燒瓶中及加熱至80°C。於此,在4小時 內,逐滴加入一藉由將17.5克的化合物(4)、4.0克的甲基 丙烯酸三級丁酯及比率5.0莫耳% (以該單體爲準)的聚合起 始劑 V-601(由和光純化學工業有限公司(Wako Pure Chemical Industries, Ltd.)製造)溶解在 58.0 克的 PGMEA 所製備之溶液。在完成逐滴加入後,在80 °C下進一步進行 該反應4小時。讓所產生的反應溶液遺留靜置至冷卻,然 後在20分鐘內,將其逐滴加入至1,3〇〇克的甲醇/150克的 蒸餾水之混合溶液,及藉由過濾收集所沉澱的粉末及乾 燥,結果,獲得15.2克的樹脂(C-8)。 就標準聚苯乙烯而論,該樹脂(C_8)的重量平均分子量 爲8,000及多分散性(Mw/Mn)爲1.3。 <合成實施例2:樹脂(C-94)之合成>In a nitrogen atmosphere, 6.4 g of propylene glycol monomethyl ether acetate (PGMEA) was charged into a three-necked flask and heated to 80 °C. Here, within 4 hours, a polymerization of 17.5 g of the compound (4), 4.0 g of the butyl methacrylate, and a ratio of 5.0 mol% (based on the monomer) was added dropwise. The initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) was dissolved in 58.0 g of a solution prepared by PGMEA. After completion of the dropwise addition, the reaction was further carried out at 80 ° C for 4 hours. The resulting reaction solution was left to stand until it was cooled, and then added dropwise to a mixed solution of 1,3 g of methanol/150 g of distilled water in 20 minutes, and the precipitated powder was collected by filtration. And drying, as a result, 15.2 g of a resin (C-8) was obtained. The resin (C_8) had a weight average molecular weight of 8,000 and a polydispersity (Mw/Mn) of 1.3 in terms of standard polystyrene. <Synthesis Example 2: Synthesis of Resin (C-94)>
192- 201033732 將300.0克的甲醇加入至150·0克的4 -環己酮羧酸乙 酯(d),接著攪拌,及在25 °C下逐滴加入氫氧化鈉水溶液(包 含35.3克的氫氧化鈉及300.0克的蒸餾水之混合溶液)。在 3小時後,確認(d)消失及將該反應溶液逐滴加入至45.7克 的濃鹽酸。隨後,加入2,400克的醋酸乙酯,以蒸餾水清 洗所得的混合物5次及濃縮該有機層,以獲得63克的化合 物(e)。 再者,加入43.7克上述獲得的(e)、394.0克的氯仿、 0 77.6克的1,1,1,3,3,3-六氟-2-丙醇及3.8克的二甲基胺基吡 啶,接著攪拌,及加入64.9克的1-乙基-3-(3-二甲基胺基 丙基)碳二醯亞胺鹽酸。在25 °C下攪拌3小時後,確認(e) 消失,及將該反應溶液逐滴加入至IN鹽酸。攪拌所產生的 溶液,及收集有機層,以1N鹽酸清洗兩次並以蒸餾水5 次,然後濃縮以獲得70.0克的化合物(f)。使用32.1克的 化合物(f)及26.0克的化合物(B),在酸性條件下進行反應, 以獲得10.0克的目標化合物(g)。 Ο 在氮環境中,將10.1克的PGME A充入三頸燒瓶中及 加熱至80°C。於此,在4小時內,逐滴加入一藉由將36.3 克的化合物(g)及比率2.5莫耳%(以該單體爲準)的聚合起 始劑V-601(由和光純化學工業有限公司製造)溶解在96.8 克的PGMEA中所製備之溶液。在完成逐滴加入後,在80 °C下進一步進行該反應4小時。將所產生的反應溶液遺留 靜置至冷卻,然後在20分鐘內,將其逐滴加入至1,3 0 0克 的甲醇/150克的蒸餾水之混合溶液,及藉由過濾收集所沉 澱的粉末及乾燥,結果,獲得25.1克的樹脂(C-94)。 201033732 就標準聚苯乙烯而論,該樹脂(C-94)之重量平均分子 量爲13,0〇〇及多分散性(Mw/Mn)爲1.4。 以相同的方式合成顯示在之後表4及5中之其它樹脂 (C)。 <合成實施例3:樹脂(1)之合成> 在氮環境中,將8.6克的環己酮充入三頸燒瓶中及加 熱至80°C。於此,在6小時內,逐滴加入一藉由將9.8克 的甲基丙烯酸2_金剛烷基-異丙酯、4.4克的甲基丙烯酸二 羥基金剛烷酯、8.9克降萡烷內酯甲基丙烯酸酯及比率8 莫耳%(以該單體爲準)之聚合起始劑V-601(由和光純化學 工業有限公司製造)溶解在79克的環己酮中所製備之溶 液。在完成逐滴加入後,在8(TC下進一步進行該反應2小 時。讓所產生的反應溶液遺留靜置至冷卻,然後在2〇分鐘 內’將其逐滴加入至800毫升己烷/200毫升醋酸乙酯的混 合溶液,及藉由過濾收集沉澱的粉末及乾燥,結果,獲得 19克的樹脂(1)。就標準聚苯乙烯而論,所獲得的樹脂之重 量平均分子量爲8,8〇〇及多分散性(Mw/Mn)爲1.9。 以相同的方式合成顯示在下列的其它樹脂(A)。 在實施例中所使用之可酸分解的樹脂(A)之結構顯示 在下列。同樣地’在每種樹脂中之重覆單元(從在結構式中 的左邊算起)的莫耳比率、重量平均分子量(Mw)及多分散性 (Mw/Mn)顯示在下列表3中。 -194- 201033732192-201033732 300.0 g of methanol was added to 150·0 g of ethyl 4-cyclohexanonecarboxylate (d), followed by stirring, and an aqueous solution of sodium hydroxide (containing 35.3 g of hydrogen) was added dropwise at 25 °C. a mixed solution of sodium oxide and 300.0 g of distilled water). After 3 hours, it was confirmed that (d) disappeared and the reaction solution was added dropwise to 45.7 g of concentrated hydrochloric acid. Subsequently, 2,400 g of ethyl acetate was added, the resulting mixture was washed 5 times with distilled water and the organic layer was concentrated to obtain 63 g of compound (e). Further, 43.7 g of the above obtained (e), 394.0 g of chloroform, 0 77.6 g of 1,1,1,3,3,3-hexafluoro-2-propanol and 3.8 g of dimethylamino group were added. Pyridine, followed by stirring, and 64.9 g of 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide hydrochloride were added. After stirring at 25 ° C for 3 hours, it was confirmed that (e) disappeared, and the reaction solution was added dropwise to IN hydrochloric acid. The resulting solution was stirred, and the organic layer was collected, washed twice with 1N hydrochloric acid and then distilled water 5 times, and then concentrated to obtain 70.0 g of compound (f). Using 32.1 g of the compound (f) and 26.0 g of the compound (B), the reaction was carried out under acidic conditions to obtain 10.0 g of the objective compound (g). 1 In a nitrogen atmosphere, 10.1 g of PGME A was charged into a three-necked flask and heated to 80 °C. Here, within 4 hours, a polymerization initiator V-601 was obtained by dropwise addition of 36.3 g of the compound (g) and a ratio of 2.5 mol% (according to the monomer) (from the light purification industry) Co., Ltd. manufactured) a solution prepared by dissolving in 96.8 grams of PGMEA. After completion of the dropwise addition, the reaction was further carried out at 80 ° C for 4 hours. The resulting reaction solution was left to stand until it was cooled, and then added dropwise to a mixed solution of 1,300 g of methanol/150 g of distilled water in 20 minutes, and the precipitated powder was collected by filtration. And drying, as a result, 25.1 g of a resin (C-94) was obtained. 201033732 In terms of standard polystyrene, the resin (C-94) has a weight average molecular weight of 13,0 Å and a polydispersity (Mw/Mn) of 1.4. The other resins (C) shown in Tables 4 and 5 later were synthesized in the same manner. <Synthesis Example 3: Synthesis of Resin (1)> In a nitrogen atmosphere, 8.6 g of cyclohexanone was charged into a three-necked flask and heated to 80 °C. Here, within 6 hours, 9.8 g of 2-adamantyl-isopropyl methacrylate, 4.4 g of dihydroxyadamantyl methacrylate, and 8.9 g of norbornane lactone were added dropwise. A solution prepared by dissolving a methacrylate and a polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries Co., Ltd.) in a ratio of 8 mol% (based on the monomer) in 79 g of cyclohexanone. After completion of the dropwise addition, the reaction was further carried out at 8 (TC for 2 hours. The resulting reaction solution was left to stand until it was cooled, and then it was added dropwise to 800 ml of hexane/200 in 2 minutes. A mixed solution of ethyl acetate in ml, and the precipitated powder were collected by filtration and dried to obtain 19 g of a resin (1). The weight average molecular weight of the obtained resin was 8,8 in terms of standard polystyrene. The enthalpy and polydispersity (Mw/Mn) was 1.9. The other resin (A) shown below was synthesized in the same manner. The structure of the acid-decomposable resin (A) used in the examples is shown below. Similarly, the molar ratio, weight average molecular weight (Mw), and polydispersity (Mw/Mn) of the repeating unit in each resin (from the left side in the structural formula) are shown in Table 3 below. 194- 201033732
-195 - 201033732-195 - 201033732
-196- 201033732 表3-196- 201033732 Table 3
樹脂(A) 組成物(莫耳比率) M w M w/Mn 1 50/10/40 8 8 00 1.9 2 40/20/40 7000 1.6 3 40/10/35/5/10 1 0000 1.7 4 40/10/40/10 11000 1.8 5 40/15/20/25 8 5 00 1.6 6 10/40/25/25 1 2000 1.8 7 50/20/30 65 00 1.6 8 40/10/50 8 000 1.7 9 25/25/50 9000 1.8 10 50/10/40 11000 1 .8 11 50/10/40 8000 1.7 12 40/ 1 0/40/1 0 7000 1 .7 13 20/15/35/30 1 0000 1.7 14 45/10/35/10 8 5 00 1 .7 15 50/40/1 0 1 0000 1.6 16 10/40/40/10 9000 1.8 17 55/10/35 1 2000 1.8 18 40/15/20/25 9000 1.7 19 40/15/30/15 7 5 00 1.6 20 40/15/45 8 000 1 .6 2 1 40/40/10/10 9 5 00 1.8 22 35/15/25/25 1 0000 1.7 23 20/15/45/20 800 0 1 .6 24 25/35/15/25 9000 1.8 25 15/30/10/33/22 1 0000 1 .7 26 20/10/40/30 1 0500 1.6 -197 - 201033732 <感光化射線或感放射線樹脂組成物之製備> 將顯示在下列表4及5中的組分溶解在溶劑中,以製 備具有固體含量濃度5質量%之溶液,及讓所獲得的溶液 過濾過具有孔洞尺寸〇.1微米之聚乙烯過滅器,以製備感 光化射線或感放射線樹脂組成物(正型感光性樹脂組成 物)。藉由下列方法評估所製備的正型感光性樹脂組成物, 及結果顯示在表4及5中。在表中,在"樹脂(2克)"中的樹 脂意謂著樹脂(A)。Resin (A) Composition (molar ratio) M w M w/Mn 1 50/10/40 8 8 00 1.9 2 40/20/40 7000 1.6 3 40/10/35/5/10 1 0000 1.7 4 40 /10/40/10 11000 1.8 5 40/15/20/25 8 5 00 1.6 6 10/40/25/25 1 2000 1.8 7 50/20/30 65 00 1.6 8 40/10/50 8 000 1.7 9 25/25/50 9000 1.8 10 50/10/40 11000 1 .8 11 50/10/40 8000 1.7 12 40/ 1 0/40/1 0 7000 1 .7 13 20/15/35/30 1 0000 1.7 14 45/10/35/10 8 5 00 1 .7 15 50/40/1 0 1 0000 1.6 16 10/40/40/10 9000 1.8 17 55/10/35 1 2000 1.8 18 40/15/20/ 25 9000 1.7 19 40/15/30/15 7 5 00 1.6 20 40/15/45 8 000 1 .6 2 1 40/40/10/10 9 5 00 1.8 22 35/15/25/25 1 0000 1.7 23 20/15/45/20 800 0 1 .6 24 25/35/15/25 9000 1.8 25 15/30/10/33/22 1 0000 1 .7 26 20/10/40/30 1 0500 1.6 - 197 - 201033732 <Preparation of sensitized ray or radiation sensitive resin composition> The components shown in the following Tables 4 and 5 are dissolved in a solvent to prepare a solution having a solid content concentration of 5% by mass, and obtained The solution was filtered through a polyethylene sterilizer having a pore size of 1.1 μm. Sense actinic rays or radiation-sensitive resin composition (positive-type photosensitive resin composition). The positive photosensitive resin composition prepared was evaluated by the following method, and the results are shown in Tables 4 and 5. In the table, the resin in "resin (2g)" means resin (A).
<影像性能測試> [曝光條件:ArF沉浸曝光]<Image Performance Test> [Exposure Condition: ArF Immersion Exposure]
將一有機抗反射薄膜(ARC29 A,由日產化學工業有限 公司(Nissan Chemical Industries,Ltd.)製造)塗布在直徑 12 英吋的矽晶圓上及在205 °C下烘烤60秒,以形成98奈米 厚的抗反射薄膜,及在上面塗布上述製備之正型感光性樹 脂組成物及在120 °C下烘烤60秒,以形成一 120奈米厚的 感光膜。經由具有線寬75奈米之1 : 1線與間隔圖案的6% 半色調遮罩,使用ArF準分子雷射沉浸掃瞄器(XT 1 2 5 0i, 由AS ML製造,ΝΑ: 0.85)來曝光所獲得的晶圓。至於該沉 浸液體,使用超純水。之後,在120°C下加熱該晶圓60秒, 以氫氧化四甲基銨水溶液(2 · 3 8質量%)顯影3 0秒,以純水 沖洗及旋乾,以獲得光阻圖案。 [線條邊緣粗糙度(LER)] 關於在線條圖案的縱方向中之5微米邊緣範圍,藉由 臨界尺寸 SEM(Critical Dimension SEM)(S-8840,由日立有 限公司(Hitachi Ltd.)製造)’在50點處測量離邊緣應該顯 -198- 201033732 現的參考線條之距離,及在測量標準偏差後’計算3σ。當 該値小於5.0奈米時,該樣品爲等級A ;當從5 · 〇奈米至小 於7.0奈米時,等級B;及當7.0奈米或更大時,等級C。 値較小指示出較高的性能。 [浮渣] 使用掃描式電子顯微鏡(S-4800,由日立有限公司製造) 觀察在具有線寬75奈米的光阻圖案中之顯影殘餘物(浮 渣);及當根本不產生浮渣時,該樣品爲等級A ;當強烈地 0 產生浮渣時,等級D;及當浮渣程度於此之間時’等級B 或C。 [顯影缺陷之評估] 使用缺陷檢驗裝置(KLA2360(商品名稱),由KLA天克 有限公司(KLA Tencor Ltd.)製造),藉由將缺陷檢驗裝置的 畫素尺寸設定爲0.16微米及閾値設定爲20,以隨機模式測 量如上述在聚矽氧晶圓(直徑12英吋)上所形成的圖案’以 便偵測從當將畫素單元叠置在參考影像上時所產生的差異 Q 取得之顯影缺陷。計算每單位面積的顯影缺陷數目(個/平 方公分)。當該値少於0.5時,該樣品爲等級A;當從0.5 至少於0.7時,等級B;當從0.7至少於1.0時’等級C; 及當1.0或更大時,等級D。値較小指示出較高的性能。 [所產生的酸之溶析量] 將所製備的正型感光性樹脂組成物塗布在直徑8英吋· 之矽晶圓上及在120。(:下烘烤60秒,以形成120奈米厚的 感光膜。隨後,使用 ArF 準分子雷射曝光機器 (PAS5500/1100,由ASML製造),在30毫焦耳/平方公分下 201033732 曝光該8英吋晶圓的整個表面。將晶圓浸泡在已向那裏加 入100毫升、已使用超純水產生裝置(米里(Milli)-Q,由曰 本米里坡(股)(Nihon Millipore Κ· K.)製造)去離子化的純水 之石英容器中,及收集已溶析進入水中的物質。藉由LC-MS 定量地測量此酸溶析進入水溶液中的量。 LC裝置:2695由瓦特斯(Waters)製造 MS裝置:艾斯奎爾(eSquire)3000,由布魯克道耳吞尼 克斯(B r u c k e r D a 11 ο n i c s)製造 藉由LC-MS裝置來測量所偵測具有質量299的離子物 種(與九氟丁基磺酸鹽陰離子相應)之強度,及計算九氟丁 烷磺酸的溶析量。亦以相同方式對其它陰離子計算溶析 量。當該溶析量爲1.0x1 〇_1()莫耳/平方公分/秒或更多時, 該樣品爲等級C;當從1.0xl0_12莫耳/平方公分/秒至少於 1 ·0χ10_1()莫耳/平方公分/秒時,等級B ;及當少於1.0xl(T12 莫耳/平方公分/秒時,等級Α。 [後退接觸角] 將所製備的正型感光性樹脂組成物塗布在直徑8英吋 矽晶圓上及在120°C下烘烤60秒,以形成120奈米厚的感 光膜。使用動態接觸角計量器(由協和界面科學有限公司 (Kyowa Interface Science Co.,Ltd.)製造),藉由膨脹-收縮 方法來測量水滴的後退接觸角。在速率6微升/秒下吸入具 有起始小滴尺寸35微升的小滴5秒,及當動態接觸角在吸 入期間安定時,採用該値作爲後退接觸角。在室溫23 ±3 t 及濕度45±4%之環境下進行測量。當此後退接觸角的數値 較大時,水可以較高的速度追隨該掃描。 -200- 201033732 〇 ο 寸漱 睞 1 後退接觸 角(度) o o ο JO ο ο Ο o o JQ o JO jn ο o JO v〇 o 卜 JO 酸的 溶析 量 < < < < < < < < < < < < < < < < < < < PQ CQ 顯影 缺陷 0Q 0Q CQ Ρ3 < ca CQ m CQ CQ < PQ < < CQ < < < CQ < ffl 浮渣 < ca < < < PQ < 〇Q < CQ < < < < < CQ < < < < m LER < < < < < < < < < < < < < < C < < < < < c 界面活性 劑《克) S i s Ci /*~N Ci y^S rn, δ δ »"Η 5 cn rn δ cn δ s s »n *«H /^Js δ ri s rn /—N w- r? 樹脂 (CX毫克) § ύ | rp 0 r-H ό I νο <Ν ΰ I ΰ S g (S ό »η <Λ V—Η ΰ /-s Ο o' <N CJ ό gN to oo ό S' 00 fn ό /—V § ύ § ϋ gs 00 00 Cfs ό 1 ό S' rp ύ § cn^ S ό /—-V g OO 3 V〇^ •«H U | 00 ό § ώ 鹼性化合物 (毫克) 1 5 έ /·—s 卜 i 00 < 00 »"Μ »〇 2 /—> cn Ζ S' ίέ z s cn έ s m έ z έ ΡΓ τ*Η S cn s Z 1 vp 1 5 溶劑(比率,以質量計) 1 S hJ CO 二 CO 1 § 1 S'1 1 w* i 3 t/3 gs § 二 SG tN 謹 ri % ο ri 二 ζΠ 1 /—s ON ( o ϊ〇 CN OS o /—s OS JQ s VO 3 C/D S' § o CN o J ?5 gs s 1 3 ⑺ gs 導 CO oo ic o -j T nJ w ?4 hJ s j /-—s 1 O cs hJ CO /—»N ON !Q o v〇 J3 2 C/D GO 1 § 二 CO $ /^N s CO 光酸產生劑(毫克) S' ο in •Q 'S N—✓ /^S Ο of § •μ ri gv ι«Η ί S'" ***H r·^ cn gv cn^ 寸 〇 'S gs i O S $ oo Ώ gs S'* Q S' ri Ϊ gv o oo 'S % S—✓ Ό VO N in' CJ o g J2 Ό 'S S' 樹脂 (2克) (N m ★ »Τϊ ν〇 ΐ> 00 OS 〇 (S ” 4 二 v〇 卜 oo 寸 w-> »"H 實施例1 (N m 揖 to 辑 κ 寸 m 揭 tt 辑 κ Ο m 辑 κ 實施例7 實施例8 〇\ m 握 0 1 辑 荽 m 1實施例12 1 實施例13 2 ί 闺 弒 w-> 揖 m Ό 握 麵 實施例17 oo ί m K 實施例19 辑 ii 實施例21 201033732 (廳璣)寸嗽 眯 担 11«§ $ Vi jn JQ jn JQ o g in o o ο ο JQ o 酸的 溶析 量 < CQ < < < PQ < < < < < < C < < < < < < 鼷;S < < < < < < < m < < < m P0 CQ m CQ < < CQ 纸倒 < PQ < < < PQ < CQ < < < CQ < < < < < < < S < < < < < < < < < < < < < < < < < < < ntj 界面活性 劑(毫克) S Ϊ δ l δ tj- s s cs 8 δ δ l s /—N Ϊ δ rn /·—Ν ν〇 s δ ri δ Ϊ 樹脂(CX毫克) _1 § ό S' o cn 0 I rn ό | 00 ΰ I cn ύ § ^w· ϋ I m ύ S' 〇〇 ά S' 00 oo ϋ S'* 00 cs On tN ό 00 ss i! cL u 1>M ό v〇 | vi 卜 (L cn ό § o ϋ g ό τ-* »—Η ό § »*Η Ο 0 s 穸 ό /—s g 〇\ 6 £ ΰ 鹼性化合物《克) 丫 1 5 00 % w z 1-^ ^H z ί^1 ό /^s »?r z /gs W V» ά ri »n Θ O cn Q i 1 f i; w i op z /—V i op % 1 5 00 z ν«-^ »—Η ζ § rn w Z fO z 1 芩 OO 溶劑(比率,以質量計): 1 ______ ! w gs 苳 § is Λ ζΠ S' , i cs § CN 1 1 ΰ ΧΑ 1 S' 1 s fN 二 CO 1 s So rs hJ C/D s I Λ C/2 S' , CS 二 C/3 /~v 1 ci έ 5¾ S' 導 二 52 S' s w* C/3 ΪΝ f /-—Ν ^Η Ss »η ο rs S' 1 S rf { i cs ύ S' t § r? Λ ΧΛ gs t s 厶 (N 光酸產生劑 (毫克) _ _1_ — 1— | 〇 X 1 X N S' Ο \〇 戈 f gs 〇 /-—V 〇 vi s 〇 〇 X /^V gv o T—> v〇 戈 〇 vo" 'S 1·^ V—✓ •s ο CO 乂 1 ο 00 Ν O »~H N gs *—< T-H W* 1 S' 〇 fi 樹脂 (2克) O «Ν π rn vr> VI CN CN ΟΝ rj m 卜 1—^ ΓΛ 握 K ?5 m rl 握 IX 闺 m 器 m 辑 m 卜 cs 握 κ m m IK OS <s 揭 Μ 荽 m w m m m m <S m m g K m cn m 握 K 實施例34 to 闺 κ ν〇 ΓΛ 辑 1« 辑 m 00 辑 OS ΓΛ 镯 〇 i 辑 m 201033732 Ο ο (鰹鹚)寸揪 账 m 1 麵接觸 角《) 〇 Ο JO JQ o o Ο jn JO jn jn pj JO g 酸的 溶析 量 < < < < < < < < < < < < < < < < c 顯影 缺陷 0Q < m OQ CQ OQ < < PQ CQ CQ ω < < < < 浮渣 < < < < < < < < < CQ < < < < < < < LER < < < < < < < < < < < < < < < < < 丨光阻組成物 界面活性 劑《克) δ δ op δ NO δ 1—H /<—s a i s /*-s Ci i /<—> <N Ϊ 3 l ^—s e /—s /—s VO W-4(2) ! W-4(2) W-4(2) 樹脂 (C)(毫克) _i S cs ό /—s o •n ϋ | *n ό § cn ό 1 •n 3 5S ό § ύ /—s g 豸 ό S ϋ gs 00 5〇 ό 00 co" ΰ /•"S t ό § X 00 ό ss 'O ό C-303/C-6 (80/40) C-308(80) C-l/CP-64 (80/7) 鹼性化合物 (毫克) j s cn 2 G" cn % 'Ό w- z gs rM ϊ〇 έ 5 vp z 'w* Ϊ in Z w »-H 1 »n Z m 5 Q S' gs w Q /—s o cn z N-4(7) N-l(10) N-3(10) 溶劑仳率’以質量計) S' 1 t Os § t 二 ΧΛ O ,w, CN f ?5 5s 00 o to j l-J CS 導 二 gs s I ?5 S' § Ji CO cs 二 導 二 KA § ¥ CN § cs . CO cs j CO gs s w· 二 CO ?5 二 C/5 /—s o § 二 CN SL-2/SL-4(60/40) SL-2/SL-4(60/40) SL-2/SL-4(60/40) 光酸產生劑(毫克) o 1—^ oo 〇 o' 00^ S—✓ Ώ S' o o" 戈 o S N 1 «o' CJ o OO 'S o 'S gs o 'S 1-H ri ; 〇 F—M o X38(100) z66(100) z66(100) 樹脂 (2克) 1 1 卜 〇\ m 寸 对 in 〇\ ^4 v> CN 寸 14/24 (1/1) 實施例41 實施例42 實施例43 實施例44 «〇 i 辑 K 實施例46 實施例47 i 镯 i 闺 w 镯 械 實施例51 1實施例52 I 實施例53 m 黄 IK 實施例55 實施例56 實施例57 ·§- 201033732 (韆鹚)寸嗽 評估結果 麵接觸 角渡) JQ § g i vn 酸的溶析 量 < < < < < < < 顯影 缺陷 < < < < < < < < 浮渣 < < < < < < < < LER ! 1 _1 < < < < < < < < 1 光阻組成物 | 界面活性劑 (SB)__1 S ϋ Ϊ Ci "T s cn § s (S /—S Ci cn w* 1 樹脂(C)(毫克) § ¥ ΰ S' ss s g 3 CN 6 g ό § CN ό § /—S g g <N ΰ g ri ό 鹼性化合物 (¾¾) g η δ CO s oo ri 1 δ i: δ vp έ s 1 w z 溶劑(比率’以質量計) Ο ri S'" o aJ 1 CS S' O (N Ji (Λ /*-> 1 F»H ri S'* f" H Ij w Ji r5 二 C/3 S' O KA 光酸產生 劑(毫克) fS Ώ gs 1 *—4 i S'* *B>4 1 gs o 免 gs 〇 s N 樹脂 (2克) r-H 寸 (S rs 00 in m 辑 i 辑 S 辑 s 辑 s 滔 In; 3 辑 « 摩 闺 S 闺 概 201033732 οο Ιο揪 評估結果 後退接觸 角(度) «η S 酸的溶析 量」 U PQ u PQ PQ 11 U U Q u Q 浮渣 Q Q 〇 Q 〇 U U o U 〇 光阻組成物 界面活性劑 ^mm W y—V /«—s Ci cn" ri δ 棚旨 (c)(毫克) 1 S' E § § /—N g CS^ 鹼性化合物 __mm^ 色 1 »Γ) c »〇 1 cn S cn 溶劑(比率,以質量 計) /—s Ο δ ¥ CM § W1 i ?5 二 C/3 S' s w* i ?5 S' 1 s 00 s Jl ⑺ 光酸產生劑 (毫克) o »Λϊ N o V") «〇 N U^i Q ««Η Ϊ 樹脂 (2克) 卜 r-H 比較例1 比較例2 1比較例3 1 丨比較例4 1 比較例5 201033732 在表4及5中的意義及樹脂(C’)如下。 該酸產生劑、樹脂(C)及組分(D)與上述闡明作爲實施 例的那些相應。 [鹼性化合物] N- 1 : N,N-二丁 基苯胺 N-2 : N,N-二己基苯胺 N-3 : 2,6-二異丙基苯胺 N-4 :三正辛胺 N-5 : N,N-二羥基乙基苯胺 N-6: 2,4,5 -三苯基咪唑 N-7:三(甲氧基乙氧基乙基)胺 N-8: 2-[2-{2-(2,2-二甲氧基-苯氧基乙氧基)乙基}_雙_(2_ 甲氧基乙基)l·胺 [界面活性劑] W-1:美加費斯F176(由大日本油墨及化學公司製造,含氣) W-2 :美加費斯R〇8(由大日本油墨及化學公司製造,含氣 及矽) W-3:聚矽氧烷聚合物KP-341(由信越化學有限公司製造, 含矽) W-4:錯伊梭S-3 66(由錯伊化學製造) W-5: PF6 5 6(由歐諾瓦製造,含氟) W-6: PF6320(由歐諾瓦製造,含氟) [溶劑] SL-1 :環己酮 SL-2:醋酸丙二醇單甲基醚酯(PGMEA: 1-甲氧基_2_乙醯 201033732 氧基丙烷) SL-3 :乳酸乙酯 SL-4:丙二醇單甲基醚(PGME: 1-甲氧基_2-丙醇) SL-5 : γ-丁內酯 SL-6 :碳酸丙二酯 [樹脂(C’)] 表6 樹脂 組成物 M w Μ w/Mn C,-l 40/40/20 7 5 00 1.4 c,-2 100 6000 1 .3An organic anti-reflective film (ARC29 A, manufactured by Nissan Chemical Industries, Ltd.) was coated on a 12-inch diameter tantalum wafer and baked at 205 ° C for 60 seconds to form A 98 nm thick antireflection film was coated with the positive photosensitive resin composition prepared above and baked at 120 ° C for 60 seconds to form a 120 nm thick photosensitive film. Using an ArF excimer laser immersion scanner (XT 1 2 5 0i, manufactured by AS ML, ΝΑ: 0.85) via a 6% halftone mask with a line width of 75 nm and a spacing pattern of 1:1 Expose the obtained wafer. As for the immersion liquid, ultrapure water is used. Thereafter, the wafer was heated at 120 ° C for 60 seconds, developed with an aqueous solution of tetramethylammonium hydroxide (2 · 38 % by mass) for 30 seconds, rinsed with pure water and spin dried to obtain a photoresist pattern. [Line Edge Roughness (LER)] Regarding the 5 μm edge range in the longitudinal direction of the line pattern, by Critical Dimension SEM (S-8840, manufactured by Hitachi Ltd.) At 50 o'clock, the measured distance from the edge should be -198- 201033732, and after calculating the standard deviation, 'calculate 3σ. When the enthalpy is less than 5.0 nm, the sample is grade A; when it is from 5 · 〇 nanometer to less than 7.0 nm, grade B; and when it is 7.0 nm or more, grade C. A small size indicates a higher performance. [Scum] The development residue (scum) in a resist pattern having a line width of 75 nm was observed using a scanning electron microscope (S-4800, manufactured by Hitachi, Ltd.); and when scum was not generated at all , the sample is grade A; grade D when scum is strongly produced 0; and grade B or C when scum level is between. [Evaluation of development defect] Using a defect inspection device (KLA2360 (trade name), manufactured by KLA Tencor Ltd.), the pixel size of the defect inspection device was set to 0.16 μm and the threshold was set to 20, measuring the pattern formed on the poly-xylene wafer (12-inch diameter) as described above in a random mode to detect development from the difference Q generated when the pixel unit is superimposed on the reference image defect. Calculate the number of development defects per unit area (pieces per square centimeter). When the enthalpy is less than 0.5, the sample is grade A; when it is from 0.5 at least 0.7, grade B; when from 0.7 at least 1.0, grade C; and when 1.0 or greater, grade D. A small size indicates a higher performance. [Amount of Separation of Acid Produced] The prepared positive photosensitive resin composition was applied onto a tantalum wafer having a diameter of 8 inches and at 120. (: Bake for 60 seconds to form a 120 nm thick photosensitive film. Subsequently, an ArF excimer laser exposure machine (PAS5500/1100, manufactured by ASML) was used to expose the 8 at 30 mJ/cm 2 201033732. The entire surface of the enamel wafer. Immerse the wafer in a 100 ml-supplied ultrapure water generator (Milli-Q, by hon本米里坡(股) (Nihon Millipore Κ· K.) Manufactured in a deionized pure water quartz container, and collects the material that has been eluted into the water. The amount of this acid eluted into the aqueous solution is quantitatively measured by LC-MS. LC device: 2695 by watt Waters manufactures MS device: eSquire 3000, manufactured by Brucker D a 11 ο nics, measuring the detected mass with mass 299 by LC-MS device The strength of the species (corresponding to the anion of nonafluorobutanesulfonate) and the amount of segregation of nonafluorobutanesulfonic acid. The amount of dissolution is also calculated for the other anions in the same manner. When the amount of dissolution is 1.0x1 〇 _1 () mole / square centimeter / second or more, the sample Level C; when from 1.0xl0_12mol/cm2/s at least 1·0χ10_1()m/cm2/s, level B; and when less than 1.0xl (T12 mol/cm2/s, Grade Α [Retraction contact angle] The prepared positive photosensitive resin composition was coated on a 8 inch diameter wafer and baked at 120 ° C for 60 seconds to form a 120 nm thick photosensitive film. The receding contact angle of the water drop was measured by a expansion-contraction method using a dynamic contact angle meter (manufactured by Kyowa Interface Science Co., Ltd.). The suction was carried out at a rate of 6 μl/sec. The initial droplet size is 35 microliters of droplets for 5 seconds, and when the dynamic contact angle is set during the inhalation, the enthalpy is used as the receding contact angle. The environment is carried out at room temperature of 23 ± 3 t and humidity of 45 ± 4%. Measure. When the number of back contact angles is large, the water can follow the scan at a higher speed. -200- 201033732 〇ο 寸 1 1 Back contact angle (degrees) oo ο JO ο ο Ο oo JQ o JO Jn ο o JO v〇o The amount of acid dissolved in <<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<><<<><<<>><<<> CQ < ffl scum < ca <<< PQ < 〇Q < CQ <<<<<<<<<<<<<<<<<<<<<<<;<<<<<<<<<<<<<<<<<<<<<<<><<><> ^S rn, δ δ »"Η 5 cn rn δ cn δ ss »n *«H /^Js δ ri s rn /—N w- r? Resin (CX mg) § ύ | rp 0 rH ό I νο <Ν ΰ I ΰ S g (S ό »η <Λ V—Η ΰ /-s Ο o' <N CJ ό gN to oo ό S' 00 fn ό /—V § ύ § ϋ gs 00 00 Cfs ό 1 ό S' rp ύ § cn^ S ό /--V g OO 3 V〇^ •«HU | 00 ό § ώ Basic compound (mg) 1 5 έ /·-s 卜 i 00 < 00 »"Μ »〇2 /—> cn Ζ S' έ zs cn έ sm έ z έ ΡΓ τ*Η S cn s Z 1 vp 1 5 Solvent (ratio, by mass) 1 S hJ CO II CO 1 § 1 S'1 1 w* i 3 t/3 gs § two SG tN ri % ο ri 二ζ Π 1 /—s ON ( o ϊ〇CN OS o /—s OS JQ s VO 3 C/DS' § o CN o J ?5 gs s 1 3 (7) gs Guide CO oo ic o -j T nJ w ?4 hJ sj /--s 1 O cs hJ CO /—»N ON !Q ov〇J3 2 C/D GO 1 § II CO $ /^N s CO Photoacid generator (mg) S' ο in •Q ' SN—✓ /^S Ο of § •μ ri gv ι«Η ί S'" ***H r·^ cn gv cn^ inch〇'S gs i OS $ oo Ώ gs S'* QS' ri Ϊ gv o oo 'S % S—✓ Ό VO N in' CJ og J2 Ό 'SS' Resin (2g) (N m ★ »Τϊ ν〇ΐ> 00 OS 〇(S ” 4 〇v〇卜 oo inch w- >»"H Example 1 (N m 揖 κ κ tt tt κ κ 实施 实施 实施 实施 实施 m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m m闺弑 闺弑 w-> 揖m 握 grip surface embodiment 17 oo ί m K embodiment 19 series ii embodiment 21 201033732 (hall) inch 嗽眯 11 11 «§ $ Vi jn JQ jn JQ og in oo ο ο The amount of JQ o acid dissolved < CQ <<< PQ <<<<<<<<<<<<<<<<<<<<<<<<;<<<< m <<< m P0 CQ m CQ << CQ paper down < PQ <<<< PQ < CQ <<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<< ntj Surfactant (mg) S Ϊ δ l δ tj- ss cs 8 δ δ ls /—N Ϊ δ rn /·—Ν ν〇s δ ri δ Ϊ Resin (CX mg) _1 § ό S' o cn 0 I rn ό | 00 ΰ I cn ύ § ^w· ϋ I m ύ S' 〇〇ά S' 00 oo ϋ S'* 00 cs On tN ό 00 ss i! cL u 1>M ό v〇| vi 卜 (L cn ό § o ϋ g ό τ-* »—Η ό § »*Η Ο 0 s 穸ό /—sg 〇\ 6 £ 碱性 Basic compound “g) 丫1 5 00 % wz 1-^ ^H z ί^1 ό /^s »?rz /gs WV» ά Ri »n Θ O cn Q i 1 fi; wi op z /—V i op % 1 5 00 z ν«-^ »—Η ζ § rn w Z fO z 1 芩OO Solvent (ratio, by mass): 1 ______ ! w gs 苳§ is Λ ζΠ S' , i cs § CN 1 1 ΰ ΧΑ 1 S' 1 s fN II CO 1 s So rs hJ C/D s I Λ C/2 S' , CS II C/ 3 /~v 1 ci έ 53⁄4 S' Guide 2 52 S' sw* C/3 ΪΝ f /--Ν ^Η Ss »η ο rs S' 1 S Rf { i cs ύ S' t § r? Λ ΧΛ gs ts 厶 (N photoacid generator (mg) _ _1_ — 1— | 〇X 1 XNS' Ο \〇戈 f gs 〇/--V 〇vi s 〇〇X /^V gv o T—>v〇戈〇vo" 'S 1·^ V—✓ •s ο CO 乂1 ο 00 Ν O »~HN gs *—< TH W* 1 S' 〇fi resin (2g) O «Ν π rn vr> VI CN CN ΟΝ rj m 卜1—^ ΓΛ grip K ?5 m rl grip IX 闺m m series m b cs grip κ mm IK OS <s Μ 荽mwmmmm <S mmg K m cn m Grip K Example 34 to 闺κ ν〇ΓΛ Series 1« Series m 00 OS ΓΛ Bracelet 〇 i Series m 201033732 Ο ο (鲣鹚) inch credit m 1 face contact Angle ") 〇Ο JO JQ oo Ο jn JO jn jn pj JO g Acid dissolution amount <<<<<<<<<<<<<<<< c development defect 0Q < m OQ CQ OQ << PQ CQ CQ ω <<<<<<<<<<<<<<< CQ <<<<<<<< LER <<<<<<<<<<<<<<< Lt << 丨 photoresist composition surfactant "克) δ δ op δ NO δ 1 - H / < -sais / * - s Ci i / < - >< N Ϊ 3 l ^ —se /—s /—s VO W-4(2) ! W-4(2) W-4(2) Resin (C) (mg) _i S cs ό /—so •n ϋ | *n ό § Cn ό 1 •n 3 5S ό § ύ /—sg 豸ό S ϋ gs 00 5〇ό 00 co" ΰ /•"S t ό § X 00 ό ss 'O ό C-303/C-6 (80 /40) C-308(80) Cl/CP-64 (80/7) Basic compound (mg) js cn 2 G" cn % 'Ό w- z gs rM ϊ〇έ 5 vp z 'w* Ϊ in Z w »-H 1 »n Z m 5 QS' gs w Q /—so cn z N-4(7) Nl(10) N-3(10) Solvent 仳 rate 'by mass) S' 1 t Os § t 二ΧΛ O , w , CN f ? 5 5s 00 o to j lJ CS Guided by two gs s I ? 5 S' § Ji CO cs Two-conductor two KA § ¥ CN § cs . CO cs j CO gs sw· CO ?5 II C/5 /-so § II CN SL-2/SL-4(60/40) SL-2/SL-4(60/40) SL-2/SL-4(60/40) Light Acid generator (mg) o 1—^ oo 〇o' 00^ S—✓ Ώ S' o o" 戈o SN 1 «o' CJ o OO 'S o 'S gs o 'S 1-H ri ; 〇 F—M o X38(100) z66(100) z66(100) Resin (2g 1 1 〇 〇 m m ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Bracelet i 闺w Bracelet Example 51 1 Example 52 I Example 53 m Yellow IK Example 55 Example 56 Example 57 ·§- 201033732 (Millennium) inch evaluation results face contact angle crossing) JQ § gi vn The amount of acid eluted <<<<<<<<<<<<<<<<<<<<<<<<<<< LER ! 1 _1 <<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<> S /—S Ci cn w* 1 Resin (C) (mg) § ¥ ΰ S' ss sg 3 CN 6 g ό § CN ό § /—S gg <N ΰ g ri ό Basic compound (3⁄43⁄4) g η δ CO s oo ri 1 δ i: δ vp έ s 1 wz Solvent (ratio 'by mass) Ο ri S'" o aJ 1 CS S' O (N Ji (Λ /*-> 1 F» H ri S'* f" H Ij w Ji r5 Two C/3 S' O KA Photoacid generator (mg) fS Ώ gs 1 *—4 i S'* *B>4 1 Gs o free gs 〇s N resin (2g) rH inch (S rs 00 in m series i series S series s s 滔In; 3 series « 闺 闺 闺 2010 201033732 οο Ιο揪 evaluation result receding contact angle (degree «The amount of η S acid dissolved U PQ u PQ PQ 11 UUQ u Q Scum QQ 〇Q 〇UU o U 〇Photoresist composition surfactant ^mm W y—V /«—s Ci cn" ri δ shed (c) (mg) 1 S' E § § / -N g CS^ Basic compound __mm^ Color 1 »Γ) c »〇1 cn S cn Solvent (ratio, by mass) /—s Ο δ ¥ CM § W1 i ?5 2 C/3 S' sw* i ?5 S' 1 s 00 s Jl (7) Photoacid generator (mg) o »Λϊ N o V") «〇NU^i Q « «Η Ϊ Resin (2 g) 卜rH Comparative Example 1 Comparative Example 2 1 Comparative Example 3 1 丨 Comparative Example 4 1 Comparative Example 5 201033732 The meanings in Tables 4 and 5 and the resin (C') are as follows. The acid generator, the resin (C) and the component (D) correspond to those exemplified above as examples. [Basic compound] N-1 : N,N-dibutylaniline N-2 : N,N-dihexylaniline N-3 : 2,6-diisopropylaniline N-4 : Tri-n-octylamine N -5 : N,N-dihydroxyethylaniline N-6: 2,4,5-triphenylimidazole N-7: tris(methoxyethoxyethyl)amine N-8: 2-[2 -{2-(2,2-dimethoxy-phenoxyethoxy)ethyl}_bis-(2-methoxyethyl)l-amine [surfactant] W-1: Mecafes F176 (manufactured by Dainippon Ink and Chemical Co., Ltd., containing gas) W-2: Mecca Fiss R〇8 (manufactured by Dainippon Ink and Chemical Co., Ltd., containing gas and helium) W-3: Polyoxane polymer KP -341 (manufactured by Shin-Etsu Chemical Co., Ltd., containing yttrium) W-4: Wrong Iso S-3 66 (manufactured by Suga Chemicals) W-5: PF6 5 6 (manufactured by Onova, fluorine) W- 6: PF6320 (manufactured by Onova, fluorine) [Solvent] SL-1: cyclohexanone SL-2: propylene glycol monomethyl ether acetate (PGMEA: 1-methoxy-2-acetone 201033732 oxy Propane) SL-3: ethyl lactate SL-4: propylene glycol monomethyl ether (PGME: 1-methoxy-2-propanol) SL-5: γ-butyrolactone SL-6: propylene carbonate [ Resin (C')] Table 6 Resin Composition M w Μ w/Mn C,-l 40/40/20 7 5 00 1.4 c,-2 100 6000 1 .3
可從表4及5看見,使用本發明之感光化射線或感放 射線樹脂組成物所形成的光阻圖案,就線條邊緣粗糙度、 浮渣、顯影缺陷及在沉浸曝光時對沉浸液體的流動性全部 而論,皆具有優良的性能。 工業可行性 根據本發明,可提供一在酸的溶析、線條邊緣粗糙度、 顯影缺陷及浮渣產生上改良,及保證在沉浸曝光時對沉浸 液體有好的流動性之光阻圖案。本發明之感光化射線或感 放射線樹脂組成物合適作爲正型感光性樹脂組成物,特別 作爲正光阻組成物。 在2008年12月12日提出的日本專利申請案案號 2008-317752、在 2008 年 12 月 12 日提出的 2008-317754、 在2009年5月20日提出的2009-122470之完整揭示,如 若完整提出般以參考之方式倂入本文,且已於本申請案中 -ζ0/ - 201033732 主張其國外優先權利益。 【圖式簡單說明】 Μ 【主要元件符號說明】 撕It can be seen from Tables 4 and 5 that the photoresist pattern formed by using the sensitized ray or the radiation-sensitive resin composition of the present invention has line edge roughness, scum, development defects, and fluidity to the immersion liquid during immersion exposure. All in all, they all have excellent performance. Industrial Feasibility According to the present invention, it is possible to provide a photoresist pattern which is improved in acid elution, line edge roughness, development defects, and scum generation, and which ensures good fluidity to an immersion liquid upon immersion exposure. The sensitized ray or radiation absorbing resin composition of the present invention is suitably used as a positive photosensitive resin composition, particularly as a positive photoresist composition. The complete disclosure of Japanese Patent Application No. 2008-317752 filed on December 12, 2008, 2008-317754 filed on December 12, 2008, and 2009-122470 filed on May 20, 2009, if complete This is incorporated herein by reference in its entirety, and in its application, PCT//201033732. [Simple description of the diagram] Μ [Description of main component symbols]
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EP2434343A1 (en) * | 2010-09-28 | 2012-03-28 | Fujifilm Corporation | Resist composition, resist film therefrom and method of forming pattern therewith |
TWI585531B (en) * | 2011-04-27 | 2017-06-01 | 東京應化工業股份有限公司 | Method of forming resist pattern and negative tone-development resist composition |
TWI832023B (en) * | 2019-12-03 | 2024-02-11 | 日商東京應化工業股份有限公司 | Resistor composition and resist pattern forming method |
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JP5523854B2 (en) * | 2009-02-06 | 2014-06-18 | 住友化学株式会社 | Chemically amplified photoresist composition and pattern forming method |
JP5728883B2 (en) * | 2010-10-20 | 2015-06-03 | Jsr株式会社 | Radiation sensitive resin composition |
JP5924071B2 (en) * | 2011-04-20 | 2016-05-25 | 住友化学株式会社 | Resist composition and method for producing resist pattern |
JP6796650B2 (en) | 2016-08-26 | 2020-12-09 | 富士フイルム株式会社 | Sensitive light-sensitive or radiation-sensitive resin composition, sensitive light-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing an electronic device. |
KR102361264B1 (en) * | 2016-10-04 | 2022-02-10 | 후지필름 가부시키가이샤 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, electronic device manufacturing method |
TW202346262A (en) * | 2022-05-23 | 2023-12-01 | 日商Jsr 股份有限公司 | Radiation-sensitive resin composition and pattern formation method |
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JP4186054B2 (en) * | 2002-04-05 | 2008-11-26 | 信越化学工業株式会社 | Resist material and pattern forming method |
JP4533660B2 (en) * | 2004-05-14 | 2010-09-01 | 富士フイルム株式会社 | Positive photosensitive composition and pattern forming method using the same |
JP5428159B2 (en) * | 2005-05-11 | 2014-02-26 | Jsr株式会社 | Novel compound and polymer, and radiation sensitive resin composition |
JP4861767B2 (en) * | 2005-07-26 | 2012-01-25 | 富士フイルム株式会社 | Positive resist composition and pattern forming method using the same |
JP4861781B2 (en) * | 2005-09-13 | 2012-01-25 | 富士フイルム株式会社 | Positive resist composition and pattern forming method using the same |
JP4881687B2 (en) * | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | Positive resist composition and pattern forming method using the same |
JP4871718B2 (en) * | 2005-12-27 | 2012-02-08 | 富士フイルム株式会社 | Positive resist composition and pattern forming method using the same |
JP4539865B2 (en) * | 2006-01-06 | 2010-09-08 | 信越化学工業株式会社 | Lactone-containing compound, polymer compound, resist material, and pattern forming method |
TWI440978B (en) * | 2006-02-15 | 2014-06-11 | Sumitomo Chemical Co | A chemically amplified positive resist composition |
JP4905772B2 (en) * | 2006-06-06 | 2012-03-28 | 富士フイルム株式会社 | Resin, positive resist composition containing the resin, protective film forming composition containing the resin, pattern forming method using the positive resist composition, and turn forming method using the protective film forming composition |
JP4858714B2 (en) * | 2006-10-04 | 2012-01-18 | 信越化学工業株式会社 | Polymer compound, resist material, and pattern forming method |
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TWI644170B (en) * | 2010-09-28 | 2018-12-11 | 富士軟片股份有限公司 | Resist composition, resist film therefrom and method of forming pattern therewith, electronic device and manufacturing process for the same |
TWI585531B (en) * | 2011-04-27 | 2017-06-01 | 東京應化工業股份有限公司 | Method of forming resist pattern and negative tone-development resist composition |
TWI832023B (en) * | 2019-12-03 | 2024-02-11 | 日商東京應化工業股份有限公司 | Resistor composition and resist pattern forming method |
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