201033387 六、發明說明： 【發明所屬之技術領域】 本發明實施例與一種荷電粒子束PVD裝置、一種遮蔽 裝置、一種用於塗佈基材之塗佈腔室、以及一種塗佈方 法有關。特定實施例係與一種用於塗佈基材之塗佈腔室 的荷電粒子束PVD裝置、一種荷電粒子束pVD裝置的 遮蔽裝置、一種塗佈基材之塗佈腔室、以及一種在一塗 φ 佈腔室中塗佈一或多個基材的方法有關、 【先前技術】 可以多種方式來形成如平板形基材上之材料薄膜塗 層’例如藉由塗佈材料的蒸鍍或濺鍍等方式。 在某些習知之具有使用陰極濺鍍之PVEKPhysical201033387 VI. Description of the Invention: [Technical Field] The present invention relates to a charged particle beam PVD device, a shielding device, a coating chamber for coating a substrate, and a coating method. A specific embodiment is a charged particle beam PVD device for coating a coating chamber of a substrate, a shielding device for a charged particle beam pVD device, a coating chamber for coating a substrate, and a coating A method of coating one or more substrates in a φ cloth chamber. [Prior Art] A thin film coating of a material such as a flat substrate can be formed in various ways, for example, by evaporation or sputtering of a coating material. Waiting for the way. In some conventional applications, PVEKPhysical with cathode sputtering is used.
Vapor Deposition)而形成之薄層的塗佈基材（例如玻璃基 材）真空設備中’會有依序排列的數個小室 鲁 （ComPartments);這些小室中至少其一包含至少一濺鍍陰 極與製程氣體入口’並連接至排氣用之真空泵。這些小 室係藉由開口（一般是真空鎖定或空氣鎖定）而彼此連 接’其可具有一或多個狹縫閥（Slit Valve) »做為基材支 撲座的傳送系統具有傳送滾捲以於濺鍵陰極前方（例如 下方）之路徑中傳送基材’並使基材通過小室之間的開 Π 〇 在一個操作濺鍍陰極的例子中，係產生電漿，而電漿 201033387 的離子係加速至欲沉積在基材上之一塗佈材料靶材上。 靶材的轟擊導致塗佈材料原子射出，其通過濺鍍陰極的 濺鍵孔洞’並累積成為基材上的沉積薄膜。 在一般例子中，例如為連續塗佈所傳送之平板形基 材，會使用具有長形濺鍍孔洞之長形濺鍍陰極。長形濺 鍍孔洞係橫越了在濺鍍孔洞前所傳送之平板形基材的寬 度（例如與傳送方向垂直之維度）。在某些使用長形濺鍍 陰極的習知濺鍍塗佈操作中，基材支撐座的部分（例如側 向部分）是不希望被塗佈的。當腔室排空時，在基材支撐 座上的塗佈材料厚層會吸收大氣中的濕度，其會導致塗 佈程序期間的不穩定性。更甚者，沉積在基材上的塗層 厚度在整個基材寬度方向上並不均勻；此外，靶材的侵 蝕輪廓（erosion profile)在靶材的整個濺鍍區域上並不均 勻。 【發明内容】 鑑於上述，提供了一種如申請專利範圍第1項所述之 何電粒子束PVD裝置、_種如申請專利範圍第8項所述 之遮蔽裝置、-種如巾請專利範圍第9項所述之塗佈腔 室、以及一種如申請專利範圍第12項所述之在塗佈腔室 中塗佈一或多個基材的方法。 在實施例中係提供一種荷電粒子束PVD裝置，包含 在一殼體内部之一塗佈材料靶材、在該殼體中之一氣 4 201033387 孔、以及與該氣孔相鄰之一遮蔽裝置，該遮蔽裝置係處 於浮動電位。 在另一實施例中係提供一種荷電粒子束pVD裝置之遮 蔽裝置；該荷電粒子束PVD裝置包含在一殼體内部之一 塗佈材料靶材，以及在該殼體中之一氣孔；該遮蔽裝置 係用以提供於與該氣孔相鄰且處於浮動電位。 在另一實施例中係提供了 一種用於塗佈基材的塗佈腔 至，其包含一基材支撐座與一荷電粒子束PVD裝置；該 荷電粒子束PVD裝置包含在一殼體内部之一塗佈材料靶 材、在該殼體中之一氣孔、以及與該氣孔相鄰之一遮蔽 裝置，該遮蔽裝置係處於浮動電位。 在又一實施例中係提供了 一種在一塗佈腔室中塗佈一 或多個基材的方法，其包含：提供一基材於具有一荷電 粒子束PVD裝置的塗佈腔室的一基材支撐座上，其中該 荷電粒子束PVD裝置具有在一殼體内部之一塗佈材料乾 φ 材、在該殼體中之一氣孔、以及與該氣孔相鄰之一遮蔽 裝置’該遮蔽裝置係處於浮動電位；以及從該荷電粒子 束PVD裝置對該基材施配塗佈材料。 由申請專利範圍附屬項、實施例與圖式說明即可清楚 瞭解其他細節與特徵。 本發明之實施例也與用於實施所揭露之方法有關，亦 包含用於執行所描述之方法步驟的裝置部件。此外，本 發明之實施例也與所描述之裝置可藉以運作的方法、或 與所描述之裝置可藉以製造的方法有關，其包含之方法 5 201033387 步驟可用於實施該裝置之功能、或製造該裝置之部件。 所述方法步驟可藉由硬體組件、韌體、軟體以適當軟 體所編程之電腦、藉由其任意組合、或以其他方式執 縱未進一步載述，仍應知一實施例中的元件可有利使 用於其他實施例。 【實施方式】 現將詳細參照各實施例說明圖式中所示之一或多個實 例，每一個實例僅為說明之用，並非用於限制本發明❶ 此述之實施例之荷電粒子束PVD裝置、遮蔽裝置塗 佈腔室及塗佈方法的一般係應用於塗佈設備的 PVD(PhySical Vapor Deposition)小室中，例如真空濺鍍 室。因此，荷電粒子束PVD裝置、遮蔽裝置與塗佈腔室 係包含真空相容材料、或由真空相容材料組成。荷電粒 子束PVD裝置係特別用於具有薄膜之連續式塗佈、或非 連續傳送式平板形基材之設備。以在太陽能電池製造中 的例子而言，在塗佈具有金屬薄膜（例如銀薄膜）的玻璃 基材（例如平板形玻璃基材）時，這些實施例係特別有用。 本發明實施例所述之荷電粒子束PVD裝置係例如為 電子束PVD裝置、離子束PVD裝置、錢鑛裝置、電漿 減鍵裝置、荷電粒子束錢鍍裝置、電子束錢鍵裝置、或 離子束濺鍍裝置。 以下以電衆減鍍裝置為例，說明在—真空塗佈腔室中 6 201033387 用於塗佈基材之荷電粒子束PVD裝置，然其並不限制本 發明之範疇。本發明之實施例係用於矩形平板形玻璃基 材之薄膜銀（Ag)塗佈。本發明實施例亦可應用於其他荷 電粒子束PVD裝置與塗佈方法，以及應用於銀以外的其 他塗佈材料，例如其他金屬或合金（如鋁此外，也可 使用具有改良形狀之其他基材，例如網狀或塑膠薄膜。 另外，基材係可連續式傳送至塗佈腔室、或以非連續模 φ 式提供於塗佈腔室中。除此之外，塗佈腔室並不限於真 空腔至。在未限制範疇下，荷電粒子束pvD裝置的氣孔 在本發明中也稱之為濺鍍孔洞。另外，荷電粒子束pvD 裝置的靶材在本發明中也稱為濺鍍靶材。 第1圖係以一典型實例說明一塗佈腔室10的截面圖， 其係設計作為進行連續傳送之矩形平板形玻璃基材100 之薄膜濺鍍的真空濺鍍腔室；第2圖說明沿第i圖中A_A 線所示之塗佈腔室1〇的截面圖。塗佈腔室1〇包含一下 φ 壁12上壁14、一刖壁16 ' —後壁1 8與兩侧壁17 ; 所有壁體的材料為不銹鋼’且塗佈腔室1〇為真空氣密。 前壁16包含一基材饋送開口 2〇，而後壁18包含一基材 卸除開η 22。基材饋送與却除一 2〇、22係設計為真 空鎖定式或氣鎖式’-般是設計从關，用以於饋送 及卸除玻璃基材100時維持塗佈腔室1〇中的真空。塗佈 腔室丨〇進一步具有製程氣體入口（未示），且連接至真空 泵（未示），以建立約W托耳（T〇rr)之真空度。應瞭解ι〇·6 托耳之壓力值應僅為-實例，當然其他的壓力值範圍也 7 201033387 是可行的；舉例而言，濺 hPa至1().2 hp 勒之—㈣力範圍係介於10·〕 hPa至10 hPa之間，蒸 心以下至…… ^壓力範圍係介於^ 更般是介於1〇·5 hPa至1〇-4 hPa間之範園。 ra至1〇 此外，在上壁14處至少有— -vg, N ^ ^ X 電漿濺鍍陰極26(—般是 =二，材，作為用於使塗佈材料分散至 塗佈腔至中之電衆減镀裝置。在本發明 極26也稱為濺鍍陰極％。 電漿濺鍍陰 —用於連續傳送複數個破璃基材⑽之傳送系統30係固 :在下壁12上作為基材支撐座’如第1圖與第2圖所 不。傳送系統3〇具有面向踐鍍陰極26之-前侧31，其 係用以將一或多個平板形玻璃基# 1〇〇支掠在前侧31 傳送系統3〇包含複數個（一般是兩個）可旋轉滾捲 32’其係彼此平行配置於塗佈腔室ι〇 μ、從前壁^連 續至後壁18。滾捲32自—個側壁17延伸至相對的另一 側壁17 ’此外’每—個滾捲32係位於傳送系統的“ 覆蓋板36下方’ 1包含各同心附接至該滾捲32之複數 個間隔環件33。環件33係延伸通過傳送系統30之覆蓋 板36中的開口且支撐玻璃基材，藉以於覆蓋板36上方 界定出一基材支撐平面12〇;基材支撐平面12〇係如第i 圖與第2圖中之虛線所示。環件33上所支撐之玻璃基材 1〇〇的前侧105係面對濺鍍陰極26，覆蓋板36係置於傳 送系統的前側3 1 ’且具有裝設高度以致使其一般定位於 基材支撑平面120的下方約2mm至約12mm處。 201033387 在傳送系統之一替代設計（未示於圖式）中’所述複數 個滾捲的直徑比所述複數個環件的直徑小了許多，每一 個環件可接著附接至一輪體（該輪體係附接至其中一個 滾捲）。因此，每一個滾捲可具有各同心附接至滚捲的複 數個間隔之輪體；各輪體係於輪體的最外周圍處支撐一 環件。環件支撐玻璃基材100,且藉以在基材支撐座的 前侧31界定出基材支撐平面12〇(在本發明中也稱為支 撐平面120)。 滾捲32係連接至一驅動單元（未示），該驅動單元係連 接至一控制單元（未示）。傳送系統3〇係製作為於以沿著 傳送路徑60之傳送方向中傳送平板形玻璃基材1〇〇 :傳 送路徑60係由所傳送之玻璃基材1〇〇予以界定，並位於 濺鍍陰極26下方之基材支撐平面12〇上、且通過塗佈腔 室1〇的基材饋送與卸除開口 20、22〇在塗佈操作期間， 傳送路徑60係自基材饋送開口 2〇延伸至基材卸除開口 22 〇 以下是根據本發明一實施例之塗佈方法的實例，其開 始係示意繪示於第3圖中。一第一玻璃基材1〇〇(第n i 個破璃基材；η為22之整數）的前端進入塗佈腔室1〇。 接著開啟誠陰極26、或其6在運作。在以銀粒子塗佈 於其前側105時，第一玻璃基材1〇〇係連續傳送於運作 中的濺鍍陰極26下方並通過塗佈腔室1〇。當第一玻璃 基材1〇〇的後端已經進入塗佈腔室10後，第二（第11個） 玻螭基材100係透過基材饋送開口 2〇而饋送至塗佈腔室 201033387 10中》第二玻璃基材100係排列在傳送系統3〇之環件 32上並傳送於其上。同樣地，在以銀粒子塗佈於其前側 時，第二玻璃基材1〇〇係連續傳送於運作中的濺鍍 陰極26下方並通過塗佈腔室1〇。在第二玻璃基材ι〇〇 的傳送期間，在經過一段第一時間與一段第二時間之 後，連續傳送之第一玻璃基材100的前端及後端係連續 抵達並透過卸除開口 22而卸除；如該領域技術人士所 φ 知，第一時間與第二時間係視第一玻璃基材100的長度 (亦即其前端與後端之間的距離）而定。之後，第二玻璃 基材100的前端抵達基材卸除開口 22並自塗佈腔室1〇 卸除；最後，在經過一段視第二玻璃基材100之長度而 定的時間後，其後端係透過基材卸除開口 22而卸除，因 此完成了第二玻璃基材i 00的塗佈程序。 例如如第2圖中所示，各玻璃基材1〇〇具有待塗佈、 且在玻璃基材在傳送mo上傳送期間面向賤錢陰極 • 26之—前側1G5。各玻璃基材⑽更包含與該前側105 相對、且在玻璃基材傳送於其上之期間面向傳送系統30 之—背侧110’以及各包含一側邊114之兩側端112。在 玻璃基材100於傳送㈣3〇上傳送之期間，如第2圖所 不，在玻璃基材1〇〇的侧彡114與塗佈腔室1〇的側壁 17之間係形成間隙500;透過間隙5〇〇，一部分的傳送 系統30係暴露且被滅鍵陰極26射出的銀粒子加以塗佈。 典型的電衆減鍍陰極係包含一殼體、在殼體内部之一 乾材、以及在殼體中之—氣孔；從乾材射出的塗佈材料 201033387 粒子通過氣孔而至塗佈腔室中。這種濺鍍裝置會導致基 材上所沉積的塗層厚度不均勻，舉例而言，基材上塗層 的厚度均句度約為±7%。此外，在氣孔周圍的殼體部分（例 如處於接地電位之成形遮蔽）會影響基材支撐座（例如傳 送系統30)上所沉積之塗層材料量。同時，成形遮蔽的這 些部分會影響靶材的侵蝕輪廓，其將降低靶材的平均可 用壽命。a thin layer of coated substrate (eg, a glass substrate) formed by Vapor Deposition) has a plurality of small chambers arranged in sequence; at least one of the chambers includes at least one sputtering cathode and Process gas inlet 'and connected to the vacuum pump for exhaust. These cells are connected to each other by openings (generally vacuum lock or air lock). They may have one or more slit valves. The transfer system as a base support has a transfer roll for In the path in front of (for example, below) the splash-bonded cathode, the substrate is transported and the substrate is passed through the opening between the cells. In an example of operating a sputtered cathode, a plasma is generated, and the ion system of the plasma 201033387 is accelerated. To deposit onto one of the coating material targets on the substrate. The bombardment of the target causes the coating material atoms to be ejected by sputtering the sputtering hole of the cathode and accumulating as a deposited film on the substrate. In a typical example, for example, for continuous coating of a flat-plate-shaped substrate, a long-split cathode having elongated sputter holes is used. The long splash plated hole traverses the width of the flat substrate (e.g., the dimension perpendicular to the direction of transport) that is transmitted before the sputter hole. In some conventional sputter coating operations that use a long sputtered cathode, portions of the substrate support (e.g., lateral portions) are undesirable for application. When the chamber is emptied, the thick layer of coating material on the substrate support absorbs moisture in the atmosphere which can cause instability during the coating process. Moreover, the thickness of the coating deposited on the substrate is not uniform across the width of the substrate; in addition, the erosion profile of the target is not uniform across the entire sputtering area of the target. SUMMARY OF THE INVENTION In view of the above, there is provided a PVD device according to Item 1 of the patent application, a shielding device as described in claim 8 of the patent application, and a patent scope A coating chamber according to item 9, and a method of coating one or more substrates in a coating chamber as described in claim 12 of the patent application. In an embodiment, a charged particle beam PVD device is provided, comprising a coating material target inside a casing, a hole in the casing 4 201033387, and a shielding device adjacent to the air hole, The screening device is at a floating potential. In another embodiment, a shielding device for a charged particle beam pVD device is provided; the charged particle beam PVD device includes a coating material target inside a casing, and an air hole in the casing; the shielding A device is provided adjacent to the vent and at a floating potential. In another embodiment, a coating chamber for coating a substrate is provided, comprising a substrate support and a charged particle beam PVD device; the charged particle beam PVD device is contained within a housing A coating material target, a vent in the housing, and a shielding device adjacent the vent, the shielding device being at a floating potential. In yet another embodiment, a method of coating one or more substrates in a coating chamber includes providing a substrate to a coating chamber having a charged particle beam PVD device a substrate support holder, wherein the charged particle beam PVD device has a coating material dry material inside a casing, a gas hole in the casing, and a shielding device adjacent to the air hole The device is at a floating potential; and a coating material is applied to the substrate from the charged particle beam PVD device. Other details and features can be clearly understood from the scope of the patent application, the examples, and the drawings. Embodiments of the invention are also related to the methods for implementing the disclosed methods, and also include apparatus components for performing the steps of the methods described. Furthermore, embodiments of the invention are also related to a method by which the described device can operate, or a method by which the described device can be manufactured, including method 5, 201033387, which can be used to implement the function of the device, or to manufacture the The components of the device. The method steps may be performed by a computer programmed with a hardware component, a firmware, or a soft body in a suitable software, by any combination thereof, or by other means without further description. It is still known that the components in an embodiment may be It is advantageous for use in other embodiments. [Embodiment] One or more examples shown in the drawings will be described in detail with reference to the embodiments, each of which is for illustrative purposes only and is not intended to limit the invention, the charged particle beam PVD of the embodiment described herein. The device, the masking device coating chamber, and the coating method are generally applied to a PVD (Physical Vapor Deposition) chamber of a coating apparatus, such as a vacuum sputtering chamber. Thus, the charged particle beam PVD device, the screening device and the coating chamber comprise or consist of a vacuum compatible material. Charged particle beam PVD devices are particularly useful in devices having continuous coating of thin films or non-continuously transporting flat shaped substrates. These examples are particularly useful in the case of coating a glass substrate (e.g., a flat glass substrate) having a metal film (e.g., a silver film) in the manufacture of solar cells. The charged particle beam PVD device according to the embodiment of the present invention is, for example, an electron beam PVD device, an ion beam PVD device, a money mining device, a plasma reduction button device, a charged particle beam money plating device, an electron beam money button device, or an ion. Beam sputtering device. The following is a description of the present invention by taking a battery stripping apparatus as an example to illustrate a charged particle beam PVD apparatus for coating a substrate in a vacuum coating chamber 6 201033387. Embodiments of the present invention are for thin film silver (Ag) coating of rectangular flat glass substrates. The embodiments of the present invention can also be applied to other charged particle beam PVD devices and coating methods, as well as other coating materials other than silver, such as other metals or alloys (such as aluminum, and other substrates having improved shapes can also be used. For example, the mesh or plastic film. In addition, the substrate can be continuously transferred to the coating chamber or provided in the coating chamber in a discontinuous mode. In addition, the coating chamber is not limited. Vacuum chamber to. In the unrestricted category, the pores of the charged particle beam pvD device are also referred to as sputtering holes in the present invention. In addition, the target of the charged particle beam pvD device is also referred to as a sputtering target in the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a coating chamber 10 as a typical example of a vacuum sputtering chamber for film sputtering of a rectangular flat glass substrate 100 for continuous conveyance; A cross-sectional view of the coating chamber 1A shown along line A_A in Fig. i. The coating chamber 1〇 includes the upper wall 14 of the wall φ, a wall 16', a rear wall 18 and two side walls 17 ; all walls are made of stainless steel' and the coating chamber is 1 The front wall 16 includes a substrate feed opening 2〇, and the rear wall 18 includes a substrate removal opening η 22. The substrate feeds and removes a 2 〇, 22 series is designed to be vacuum-locked or air-locked'- It is generally designed to maintain the vacuum in the coating chamber 1 when feeding and unloading the glass substrate 100. The coating chamber further has a process gas inlet (not shown) and is connected to the vacuum pump ( Not shown) to establish a vacuum of about TW (T〇rr). It should be understood that the pressure value of ι〇·6 Torr should be only - an example, although other pressure values range is also 7 201033387 is feasible; In terms of splashing hPa to 1 (). 2 hp - (4) force range is between 10 ·] hPa to 10 hPa, below the steam core to ... ^ pressure range is ^ is more than 1 〇·5 hPa to 1〇-4 hPa between the Fan Park. ra to 1〇 In addition, at the upper wall 14 there is at least -vg, N ^ ^ X plasma sputter cathode 26 (normally = two, wood As the electron sinking device for dispersing the coating material into the coating chamber to the center. The electrode 26 of the present invention is also referred to as the sputtering cathode %. The plasma sputtering is negative - for continuous transmission The transport system 30 of the plurality of glass substrates (10) is secured: as a substrate support on the lower wall 12 as shown in Figures 1 and 2. The transport system 3 has a front side 31 facing the plating cathode 26. , which is used to slap one or more flat glass bases on the front side 31. The transport system 3 includes a plurality of (generally two) rotatable rolls 32' which are arranged in parallel with each other. The cloth chamber 〇μ, from the front wall ^ to the rear wall 18. The roll 32 extends from the side wall 17 to the opposite side wall 17 'further than each of the rolls 32 is located in the cover plate 36 of the conveyor system The lower '1' contains a plurality of spacer rings 33 that are concentrically attached to the roll 32. The ring member 33 extends through the opening in the cover plate 36 of the transport system 30 and supports the glass substrate, whereby a substrate support plane 12 is defined above the cover plate 36; the substrate support plane 12 is as shown in FIG. The dotted line in Figure 2 shows. The front side 105 of the glass substrate 1 supported on the ring member 33 faces the sputter cathode 26, which is placed on the front side 3 1 ' of the transport system and has a mounting height such that it is generally positioned at the base Below the material support plane 120 is from about 2 mm to about 12 mm. 201033387 In an alternative design of the delivery system (not shown), the diameter of the plurality of rolls is much smaller than the diameter of the plurality of rings, and each ring can then be attached to a wheel ( The wheel system is attached to one of the rolls). Thus, each roll can have a plurality of spaced wheel bodies that are concentrically attached to the roll; each wheel system supports a ring member at the outermost periphery of the wheel body. The ring member supports the glass substrate 100 and thereby defines a substrate support plane 12 (also referred to as support plane 120 in the present invention) on the front side 31 of the substrate support. Roll 32 is coupled to a drive unit (not shown) that is coupled to a control unit (not shown). The transport system 3 is configured to transport the flat glass substrate 1 in a transport direction along the transport path 60: the transport path 60 is defined by the transported glass substrate 1 位于 and is located at the sputter cathode 26 below the substrate support plane 12, and through the substrate feeding and unloading openings 20, 22 of the coating chamber 1 〇 during the coating operation, the transport path 60 extends from the substrate feed opening 2 to Substrate Removal Opening 22 〇 The following is an example of a coating method in accordance with an embodiment of the present invention, the beginning of which is schematically illustrated in FIG. A front end of a first glass substrate 1 (the n ith glass substrate; n is an integer of 22) enters the coating chamber 1〇. Then open Cheng cathode 26, or its 6 is in operation. When silver particles are applied to the front side 105 thereof, the first glass substrate 1 is continuously conveyed under the sputtering cathode 26 in operation and passed through the coating chamber 1〇. After the rear end of the first glass substrate 1 has entered the coating chamber 10, the second (11th) glass substrate 100 is fed through the substrate feeding opening 2 to the coating chamber 201033387 10 The second glass substrate 100 is arranged on the ring member 32 of the transport system 3 and transported thereon. Similarly, when silver particles are applied to the front side thereof, the second glass substrate 1 is continuously conveyed under the sputtering cathode 26 in operation and passed through the coating chamber 1〇. During the transfer of the second glass substrate ι, the front end and the rear end of the first glass substrate 100 continuously delivered after a lapse of a first period of time and a second period of time continuously arrive and pass through the removal opening 22 Dismounting; as is known to those skilled in the art, the first time and the second time depend on the length of the first glass substrate 100 (i.e., the distance between the front end and the back end thereof). Thereafter, the front end of the second glass substrate 100 reaches the substrate removal opening 22 and is removed from the coating chamber 1; finally, after a period of time depending on the length of the second glass substrate 100, thereafter The end is removed by the substrate removal opening 22, thus completing the coating procedure of the second glass substrate i 00 . For example, as shown in Fig. 2, each of the glass substrates 1 has a front side 1G5 to be coated and which faces the money cathode 26 during the conveyance of the glass substrate on the transport mo. Each of the glass substrates (10) further includes a back side 110' facing the transport system 30 and two side ends 112 each including a side 114 opposite the front side 105 and during transport of the glass substrate thereto. During the transfer of the glass substrate 100 on the transport (four) 3 ,, as shown in FIG. 2, a gap 500 is formed between the side sill 114 of the glass substrate 1 and the side wall 17 of the coating chamber 1 ;; With a gap of 5 〇〇, a portion of the transport system 30 is exposed and coated with silver particles ejected by the off-host cathode 26. A typical electrified cathode plating system comprises a casing, a dry material inside the casing, and a pore in the casing; a coating material ejected from the dry material 201033387 The particles pass through the pores into the coating chamber. Such a sputtering apparatus results in uneven thickness of the coating deposited on the substrate. For example, the thickness of the coating on the substrate is about ± 7%. In addition, the portion of the housing around the air vent (e.g., the shaped shield at ground potential) can affect the amount of coating material deposited on the substrate support (e.g., transfer system 30). At the same time, these portions of the shaped shield can affect the erosion profile of the target, which will reduce the average useful life of the target.
在典型實例中，氣孔為長形且具有彼此相對之兩末 端；再者’例如在第i圖與第2圖所示之用於塗佈連續 傳送之基材1GG的塗佈腔室1G中，可設有濺鑛陰極％， 使得長形氣孔橫跨傳送路徑在部分例子卜長形氣 孔係橫越氣孔前方傳送之平板行基材的寬度（亦即愈傳 送路徑垂直的維度)。在這種錢鍍裝置中，可增加基材;〇〇 側端11 2的塗佈厚度。 據本發明之實施例，荷電粒子束PVD裝置包含在一 殼體内部之-塗佈材料乾材、在該殼趙中之—氣孔、以 及與該氣孔相鄰之一遮蔽萝 電位。 t敵裝置’ §亥遮蔽裝置係處於浮動 可於浮動電位，的_因而 π靶材可被侵蝕地更為均勻，其可延 長乾材的使用壽命。靶材 J延 處的電場形狀所致= 侵餘係因氣孔邊緣 :: 而這是因為與氣孔相鄰之遮蔽裝置 為洋動電位之故；藉此， 敝屐置 氣孔的電位梯产，使得㊉ 在氣孔邊緣處及/或橫跨 電位梯度使得電聚不會被不利地影宰且可更均 201033387 勻的分佈於乾材間。此外’因為遮蔽 裝置的遮蔽效應， 塗佈材料粒子係以更朝向基材的方式自乾材射出；因 此’可降低在基材支標座之暴露部分（例如側部）上的塗 層厚度，同時在基材上所沉積的塗層厚度係實質均勻， 因而可延長基材支撐座之清潔的時間間距。此外，因為 可避免基材支撐座的塗佈材料厚層（此厚層將於腔室排 空時吸收空氣中的濕氣)’所以可消除塗佈程序期間的不 穩定性。In a typical example, the pores are elongated and have opposite ends to each other; and further, for example, in the coating chamber 1G for coating the continuously transported substrate 1GG shown in Figs. A splash cathode % may be provided such that the elongated pores span the width of the flat sheet substrate (i.e., the vertical dimension of the transport path) across the transport path in a portion of the elongated pore system that traverses the front of the pores. In such a money plating apparatus, the substrate can be added; the coating thickness of the side end 11 2 of the crucible. According to an embodiment of the invention, the charged particle beam PVD device comprises a dry material of a coating material inside the casing, a pore in the shell, and a shielding potential adjacent to the pore. The enemy device ' § hai shielding device is floating at a floating potential, so the π target can be eroded more evenly, which can extend the service life of the dry material. The shape of the electric field due to the extension of the target J = the intrusion due to the edge of the pore:: and this is because the shielding device adjacent to the pore is an oceanic potential; thereby, the potential of the pore is generated, so that Ten At the edge of the stomata and/or across the potential gradient, the electropolymerization will not be adversely affected and can be evenly distributed between the dry materials in 201033387. In addition, because of the shadowing effect of the shielding device, the coating material particles are ejected from the dry material in a manner more toward the substrate; thus 'the thickness of the coating on the exposed portion (for example, the side portion) of the substrate holder can be reduced, At the same time, the thickness of the coating deposited on the substrate is substantially uniform, thereby extending the cleaning time interval of the substrate support. In addition, the instability during the coating process can be eliminated because a thick layer of the coating material of the substrate support can be avoided (this thick layer absorbs moisture in the air when the chamber is emptied).
第4圖示意說明了第Μ中其中一個賤鑛陰極的底視 圖》濺鍍陰極26包含一殼體261、在殼體内部之一塗佈 材料靶材262、以及在該殼體中之一氣孔263。在氣孔 263周圍，殼體261或其部分（例如成形遮蔽，未示）係接 地》根據本發明之實施例，遮蔽裝置266、268係與氣孔 263相鄰，遮蔽裝置266、268係處於浮動電位且/或由 一真空相容材料或多個真空相容材料組成。遮蔽裝置係 位於氣孔外圍。在某些實施例的例子中，遮蔽裝置係形 成為一蓋體，其圍繞並遮蔽了靶材262與在氣孔263周 圍之殼體261間的侧向區域。在第4圖所示之實例中， 遮蔽裝置266、268延伸至氣孔263中，且位於靶材262 與氣孔263之間。 遮蔽裝置與靶材之間的距離係介於4〇mm至7〇mm之 範圍，或一般為至少55mm。這樣的距離可使遮蔽裝置避 免因減鑛運作中乾材的雨溫而變形或劣化。 在第4圖所示之實例中，氣孔263具有長形形狀，其 12 201033387 具有彼此相對的兩末端264，且該遮蔽裝置包含位於一 末端264之一第一遮蔽266、以及位於另一末端264之 一第二遮蔽268。一般而言，氣孔20從—末端264至 另一末端264間的長度係介於約9〇〇rnin至約uoomm間 之範圍，例如為約l56〇mm。第一與第二遮蔽266、268 係延伸至氣孔263中，所產生之開口的長度一般係介於 約70〇mm至約16〇〇mm之範圍，例如約為i36〇mm，其 β 係用於釋放從靶材射出的塗佈材料粒子。 根據某些實施例的例子，遮蔽裝置係經由一絕緣連接 器而固疋至殼體，藉此，遮蔽裝置係與殼體絕緣，其係 至。、部刀接地、並保持為浮動電位。如第4圖與第5圖 所不，遮蔽裝置係在殼體261内部靶材262與殼體261 之間固定於絕緣連接器固定部265。 第5圖不意說明了第4囷中所示之電漿濺鍍裝置％ 之右側末端264的部分截面圖β如第5圖所示，遮蔽268 • 係介由絕緣連接器27〇而固定在鄰近氣孔263處的殼體 261絕緣連接器的材料為電性絕緣例如真空相容抗 熱之合成材料，如以陶究或碳為基礎之材料。舉例而言， 絕緣連接器的材料可包含、或由下列至少—種材料所組 成Teflon、陶究與ΡΕΕΚ。絕緣連接器使遮蔽 保持為浮動電位。在某些實施㈣例子巾，絕緣連接器 ”有L形截面，其具有一短分枝2701與一長分枝 7〇2絕緣連接器27〇的長分枝的末端係藉由絕緣 連接器以部265而附接至靠近氣孔如處的般體261; 13 201033387 遮蔽268係固定在絕緣連接器270的短分枝2701處。因 為第5圖中所示之L形截面與絕緣連接器270的配置之 故，靶材262以及氣孔263周圍的殼體261之間的側向 區域係得以遮蔽。此外，在第5圖所示的部分例子中， 遮蔽268係形成為蓋體，額外地圍繞和遮蔽把材262以 及氣孔263周圍之殼體261間的侧向區域。 根據某些實施例（其可結合任何其他實施例的例子或 本發明之實施例）’遮蔽裝置係經由具有自遮蔽結構之絕 緣連接器而固定至荷電粒子束PVD裝置的殼體，藉此， 絕緣連接器的絕緣特性可避免因塗佈材料射出而在絕緣 連接器的表面上形成導電薄膜而變差。 根據包含具自遮蔽結構之絕緣連接器的實施例之一實 例’第5圖所不之絕緣連接器包含連接至短分枝2701並 導向殼體261之再延分枝（further branch)2703，因而產 生U形連接器；此例係緣示於第6圖中。再延分枝27〇3 比長分枝2702稱微為短’因而不與殼體261接觸。該再 延分枝2703遮蔽了長分枝2702隔離氣孔263與靶材262 之間的電漿及/或隔離濺鍍之塗佈材料粒子；因此，在濺 鏟程序期間，可避免在長分枝2702上形成導電表面塗 層。藉此，可於荷電粒子束PVD裝置（例如濺鍍裝置）的 長運轉時間中保持遮蔽268的浮動電位。 在某些實施例的例子中，氣孔係位於遮蔽裝置與靶材 之間。舉例而言，包含氣孔之殼體係位於遮蔽裝置與靶 材之間。氣孔與遮蔽裝置之間（例如殼體與遮蔽裝置之間） 201033387 的距離係介於約至約4mm之間，較一般是約 2mm。 第6b圖說明了另一個包含具自遮蔽結構之絕緣連接 器测的實施例。在此例令’包含氣孔之殼艘（未示於 第6b圖）係位於遮蔽裝置與靶材（未示於第补圖）之間。 此外，包含氣孔之殼體與遮蔽裝置之間的距離係介於約 2mm的範圍。殼體261包含複數個固定部開口 26ιι，其 φ 位於氣孔周圍以固定遮蔽裳置的其中一個遮蔽（例如遮 蔽268)。在本例中，第讣圖中所示之殼體261的固定部 開口 2611為圓柱形。在此例中絕緣連接器27〇〇包含— 絕緣第一部分2713與一絕緣第二部分2714，其各由電 絕緣材料所形成。絕緣連接器2〇〇7的材料係如真空相 容、抗熱之合成材料，例如以陶瓷或碳為基礎之材料。 舉例而言，絕緣連接器的材料可包含、或由下列至少— 種材料所組成：Teflon®、陶瓷與PEEK。在一實例中， Φ 至少該絕緣第二部分2714是由電絕緣材料所形成。在殼 體261的圓柱形開口 2611中具有絕緣第一部分2713 ; 該絕緣第一部分2713具有内螺紋2715以與一固定螺絲 2717嚙合。在某些實例中，固定螺絲也是由電絕緣材料 所形成。該絕緣第一部分2713係固定在殼體261面向靶 材（未示於第6b圖中）之一側。絕緣第一部分27n係固 定為使其部分填充該開口 2611，内螺紋2715可由殼體 261面向基材支撐座（未示於第6b圖中）之一側進入。絕 緣第二部分2714係形成為一環件（例如絕緣墊圈），其位 15 201033387 於開口 2611上方、面向基材支撐座之殼體的一側；在介 於絕緣連接器的絕緣第一部分與絕緣第二部分2713、 2714之間的此位置中係具有一間隙2716，如第6b圖所 示；在絕緣第二部分2714上固定有遮蔽268。為此，當 遮蔽268放置定位於其上時，遮蔽268在與殼體261之 開口 2611相應的位置處具有開口 2681 ;開口 2681具有 可容置固定螺絲27 1 7之尺寸。 φ 在第6b圖所示之固定狀態中，螺絲2717將遮蔽268 固定於絕緣第二部分27 14上，其延伸通過開口 2611而 至絕緣第一部分2713中，並與螺紋2715嚙合。藉此， 遮蔽268與絕緣第一及第二部分2713、2714係固定於殼 體261處。此外’由於間隙2γΐ6及由於絕緣第一及/或 第二部分2713、2714及/或固定螺絲2717之故，絕緣連 接器2700係使遮蔽268保持為浮動電位。此外，絕緣第 二部分2714係位於遮蔽268與殼體261之間，其在本實 . 例中所具有之彼此距離約為2mm，因此絕緣第二部分 2714係實質上與可隔離導電塗層之氣體粒子而受遮蔽。 再者’由於氣體粒子無法進入間隙2716，故絕緣連接器 2700本身可受遮蔽而使傳導塗層不致塗佈在間隙2716 的内部，因此可避免在絕緣連接器2700上傳導塗層（其 將使殼逋261與遮蔽268電連接）。故，在使用本發明實 施例之荷電粒子束PVD裝置（如濺鍍裝置）的塗佈製程期 間’固定在殼體261上之遮蔽268的浮動電位並不會受 到影響。 16 201033387 第7a圓以另一典型實例說明了塗佈腔室1000的戴面 圖，其係設計作為用於對靜止支撐之玻璃基材100進行 薄膜塗佈之真空藏鍍腔室。塗佈腔室1〇〇〇包含下壁12、 上壁（未不）、前壁（未示）、後壁（未示）以及兩侧壁17，所 有壁體的材料都為不銹鋼，且塗佈腔室1〇〇〇係真空氣 密。塗佈腔室1〇〇〇更包含製程氣體入口（未示）且連接至 真空泵（未示）以建立真空。舉例而言，濺鍍之一般壓力 範圍係介於1〇-3心至1〇-2 hpa之間，蒸鑛之一般麗力 範圍係介於10 6 hPa以下至1〇-3 hPa之間、更一般是介 於10 hPa至1〇.4 hPa間之範圍。 在塗佈腔室1〇〇〇的下壁12上固定有一基材支撐座 300,以靜止支撐一或多個玻璃基材1〇〇。基材支撐座 具有面向濺鍍陰極260之一前側3 1，其用於支撐前側3 j 上的一或多個平板形玻璃基材1〇〇。塗佈腔室1〇〇〇係包 含一基材饋送開口（未示）及/或一操縱器（未示），以傳送 基材100進出腔室1000。 此外，在上壁14處具有至少一濺鍍陰極26〇( 一般是 兩個濺鍍陰極260)，其各含有一銀靶材作為電漿濺鍍裝 置’以施配塗佈材料製塗佈腔室1〇〇〇中。在本發明中， 電黎滅鏟陰極260也稱為減錄陰極260。 第7b圖為濺鍍陰極260的底視圖，其包含殼體261、 靶材262與濺鍍孔洞263。在濺鍍孔洞263周圍，一遮 蔽裝置係以遮蔽框2680形式、經由絕緣連接器（未示）固 定在殼體261内部靠近孔洞處的絕緣連接器固定部265 17 201033387 處。藉此’遮蔽框2680係與殼體絕緣，並保持為浮動電 位。絕緣連接器具有自遮蔽結構，例如上述第6圖中所 示者。在部分實例中’如參照第5圖所述之實例，遮蔽 2680係形成為蓋體，且/或該絕緣連接器具有之形式係使 得在靶材262與孔洞263周圍的殼體261間之側向區域 得以被園繞及遮蔽。Figure 4 is a schematic illustration of a bottom view of one of the tantalum cathodes of the second embodiment. The sputtering cathode 26 comprises a housing 261, a coating material target 262 inside the housing, and one of the housings. Air hole 263. Around the air vent 263, the housing 261 or a portion thereof (e.g., shaped shield, not shown) is grounded. According to an embodiment of the invention, the screening devices 266, 268 are adjacent to the air holes 263, and the shielding devices 266, 268 are at floating potentials. And/or consist of a vacuum compatible material or a plurality of vacuum compatible materials. The shielding device is located at the periphery of the vent. In some examples of embodiments, the screening device is formed as a cover that surrounds and shields the lateral regions between the target 262 and the housing 261 around the air vent 263. In the example shown in FIG. 4, the screening means 266, 268 extend into the air vent 263 and are located between the target 262 and the air vent 263. The distance between the screening device and the target is in the range of 4 mm to 7 mm, or typically at least 55 mm. Such a distance allows the shielding device to be prevented from being deformed or deteriorated due to the rain temperature of the dry material in the mine operation. In the example shown in FIG. 4, the air vent 263 has an elongated shape with its 12 201033387 having opposite ends 264, and the screening device includes a first shield 266 at one end 264 and a second end 264 at the other end 264. One of the second shades 268. In general, the length of the vent 20 from the end 264 to the other end 264 is in the range of from about 9 〇〇rnin to about uoomm, for example about l56 〇 mm. The first and second shields 266, 268 extend into the air holes 263, and the length of the openings produced is generally in the range of about 70 〇 mm to about 16 〇〇 mm, for example, about 36 mm, and the β system is used. The release of the coating material particles ejected from the target. According to an example of some embodiments, the screening device is secured to the housing via an insulated connector whereby the shielding device is insulated from the housing and is attached thereto. The knife is grounded and kept at a floating potential. As shown in Figs. 4 and 5, the shielding device is fixed to the insulating connector fixing portion 265 between the target 262 and the housing 261 inside the casing 261. Figure 5 is not intended to illustrate a partial cross-sectional view of the right end 264 of the plasma sputtering apparatus shown in Figure 4, as shown in Figure 5, the shield 268 is fixed adjacent to the insulating connector 27 The material of the housing 261 insulation connector at the vent 263 is electrically insulating, such as a vacuum compatible heat resistant composite material, such as a ceramic or carbon based material. For example, the material of the insulated connector may comprise, or consist of, at least one of the following materials: Teflon, ceramics and tantalum. The insulated connector keeps the shadow at a floating potential. In some embodiments (4) the example towel, the insulated connector has an L-shaped cross section with a short branch 2701 and a long branch 7 〇 2 insulated connector 27 〇 long branched end by an insulated connector The portion 265 is attached to the body 261 near the air hole; 13 201033387 The shield 268 is fixed at the short branch 2701 of the insulated connector 270. Because of the L-shaped cross section shown in FIG. 5 and the insulating connector 270 In the arrangement, the lateral regions between the target 262 and the housing 261 around the air holes 263 are shielded. Further, in the example shown in Fig. 5, the shielding 268 is formed as a cover, additionally surrounding and Shading the material 262 and the lateral regions between the housings 261 around the air holes 263. According to certain embodiments (which may be combined with examples of any other embodiments or embodiments of the invention), the shielding device is via a self-shielding structure The insulating connector is fixed to the casing of the charged particle beam PVD device, whereby the insulating property of the insulating connector can be prevented from being deteriorated by forming a conductive film on the surface of the insulating connector due to the coating material being ejected. Shading structure An example of an embodiment of an insulated connector, the insulating connector of FIG. 5, includes a refurbished branch 2703 that is coupled to the short branch 2701 and guided to the housing 261, thereby creating a U-shaped connector; The phylogenetic edge is shown in Fig. 6. The re-branched branch 27〇3 is slightly shorter than the long branch 2702 and thus does not contact the housing 261. The re-delay branch 2703 obscures the long branch 2702 isolation pore 263 The plasma between the target 262 and/or the sputtered coating material particles; therefore, during the shovel procedure, formation of a conductive surface coating on the long branches 2702 can be avoided. Thereby, the charged particles can be The floating potential of the shield 268 is maintained during the long run time of the beam PVD device (e.g., the sputtering device). In some embodiments, the vent is located between the shield and the target. For example, a housing containing vents Located between the shielding device and the target. The distance between the air vent and the shielding device (for example between the housing and the shielding device) 201033387 is between about 4 mm and about 2 mm, more generally about 2 mm. Figure 6b illustrates another An insulated connection with a self-shielding structure An example of a device test. Here, the 'cavity containing the air holes (not shown in Fig. 6b) is located between the shielding device and the target (not shown in the supplementary figure). In addition, the housing containing the air holes and The distance between the screening devices is in the range of about 2 mm. The housing 261 includes a plurality of fixed portion openings 26, which are located around the air holes to secure one of the shields (e.g., the shadows 268). In this example, The fixing portion opening 2611 of the housing 261 shown in the second figure is cylindrical. In this example, the insulating connector 27 includes an insulating first portion 2713 and an insulating second portion 2714, each of which is made of an electrically insulating material. form. The material of the insulated connector 2〇〇7 is a vacuum compatible, heat resistant synthetic material such as a ceramic or carbon based material. For example, the material of the insulated connector may comprise, or consist of, at least one of the following materials: Teflon®, ceramic, and PEEK. In one example, Φ at least the insulative second portion 2714 is formed from an electrically insulating material. An insulating first portion 2713 is formed in the cylindrical opening 2611 of the housing 261; the insulating first portion 2713 has an internal thread 2715 to engage with a set screw 2717. In some instances, the set screw is also formed from an electrically insulating material. The insulating first portion 2713 is fixed to one side of the housing 261 facing the target (not shown in Fig. 6b). The insulating first portion 27n is fixed such that it partially fills the opening 2611, and the internal thread 2715 can be accessed by the housing 261 facing one side of the substrate support (not shown in Figure 6b). The second insulating portion 2714 is formed as a ring member (e.g., an insulating gasket) having a position 15 201033387 above the opening 2611 facing the side of the housing of the substrate support; at the insulating first portion and the insulating portion of the insulated connector In this position between the two portions 2713, 2714 there is a gap 2716 as shown in Figure 6b; a shield 268 is secured to the insulated second portion 2714. To this end, when the shield 268 is placed thereon, the shield 268 has an opening 2681 at a position corresponding to the opening 2611 of the housing 261; the opening 2681 has a size to accommodate the fixing screw 27 17 . φ In the fixed state shown in Fig. 6b, the screw 2717 secures the shield 268 to the insulated second portion 27 14 which extends through the opening 2611 into the insulated first portion 2713 and engages the thread 2715. Thereby, the shield 268 and the insulating first and second portions 2713, 2714 are fixed to the casing 261. In addition, the insulating connector 2700 maintains the shield 268 at a floating potential due to the gap 2γΐ6 and the insulating first and/or second portions 2713, 2714 and/or the fixing screws 2717. In addition, the second insulating portion 2714 is located between the shield 268 and the housing 261, which in the present embodiment has a distance of about 2 mm from each other, so that the insulating second portion 2714 is substantially separate from the electrically conductive coating. The gas particles are obscured. Furthermore, since the gas particles cannot enter the gap 2716, the insulating connector 2700 itself can be shielded so that the conductive coating is not applied inside the gap 2716, thereby avoiding conduction of the coating on the insulating connector 2700 (which will The case 261 is electrically connected to the shield 268). Therefore, the floating potential of the shield 268 fixed to the casing 261 during the coating process using the charged particle beam PVD device (e.g., sputtering device) of the embodiment of the present invention is not affected. 16 201033387 The 7a circle illustrates, by way of another exemplary example, a face view of the coating chamber 1000 designed as a vacuum plating chamber for thin film coating of a stationary supported glass substrate 100. The coating chamber 1 includes a lower wall 12, an upper wall (not shown), a front wall (not shown), a rear wall (not shown), and two side walls 17, all of which are made of stainless steel and coated. The cloth chamber 1 is vacuum-tight. The coating chamber 1 further includes a process gas inlet (not shown) and is connected to a vacuum pump (not shown) to establish a vacuum. For example, the general pressure range of sputtering is between 1〇-3 hearts and 1〇-2 hpa, and the general Lili range of steaming is between 10 6 hPa and 1〇-3 hPa. More generally, it is between 10 hPa and 1 〇.4 hPa. A substrate support base 300 is fixed to the lower wall 12 of the coating chamber 1 to statically support one or more glass substrates. The substrate support has a front side 3 1 facing the sputter cathode 260 for supporting one or more flat glass substrates 1 on the front side 3 j . The coating chamber 1 comprises a substrate feed opening (not shown) and/or a manipulator (not shown) for transporting the substrate 100 into and out of the chamber 1000. In addition, at the upper wall 14, there is at least one sputtering cathode 26 (generally two sputtering cathodes 260) each containing a silver target as a plasma sputtering device to apply a coating material to the coating cavity. Room 1 in the middle. In the present invention, the electric shovel cathode 260 is also referred to as a subtractive cathode 260. Figure 7b is a bottom view of the sputter cathode 260, which includes a housing 261, a target 262, and a sputter hole 263. Around the sputter hole 263, a shielding means is secured in the form of a shadow frame 2680 via an insulated connector (not shown) to the interior of the housing 261 adjacent the insulating connector securing portion 265 17 201033387. Thereby, the shadow frame 2680 is insulated from the casing and maintained at a floating potential. The insulated connector has a self-shielding structure such as that shown in Fig. 6 above. In some examples, 'as in the example described with reference to Figure 5, the shield 2680 is formed as a cover and/or the insulated connector has a form such that the side between the target 262 and the housing 261 around the aperture 263 The area can be surrounded and covered.
由於包含遮蔽框2680之遮蔽裝置係處於浮動電位，因 而濺鍍陰極260之靶材的侵蝕輪廓可獲得提昇。這表示 靶材可被侵蝕地更為均勻，其可延長靶材的使用壽命。 靶材的實質均勻侵蝕係因氣孔邊緣處的電場形狀所致， 而這是因為與氣孔相鄰之遮蔽裝置為浮動電位之故；藉 此，可調整在氣孔邊緣處及/或橫跨氣孔的電位梯度使 得電漿不會被不利轉響且可更均句的分佈於乾材間。 此外，因為遮蔽裝置的遮蔽效應，塗佈材料粒子係以更 朝向基材的方式自乾材射出；因此，可降低在基材支撐 座之暴露部分（例如側部）上的塗層厚度，同時在基材上 所儿積的塗層厚度係實質均勻，因而可延長基材支樓座 之π潔的時間間距。此外，因為可避免基材支撐座的塗 佈材料厚層(此厚層將於腔室排空時吸收空氣中的濕 氣）所以可消除塗佈程序期間的不穩定性。 囚此，根據一實施例 種在一塗佈腔室中塗佈一 多個基材的方法包含：提供—基材於―塗佈腔室的一 材支推座上中該塗佈腔室具有如前述任一實施例 實例所述之荷電粒子束pvD裝置；以及自該荷電粒子 201033387 PVD裝置向基材施配塗佈材料。 根據另一實施例，一種在一塗佈腔室中塗佈一或多個 基材的方法包含：提供如前述任一實施例或實例所述之 一塗佈腔室；提供一基材於該塗佈腔室的基材支撐座 上，以及自該塗佈腔室中的該荷電粒子束PVD裝置向基 材施配塗佈材料。 舉例而言’這些方法可使用上述之塗佈腔室1〇或塗佈 φ 腔室1000而實施，其分別包含電漿濺鍍陰極26或260 作為一荷電粒子束PVD裝置。 舉例而言’在使用塗佈腔室1〇之塗佈方法中，基材 100係連續或非連續傳送於運作中的濺鍍陰極26下方。 由於陰極26在濺鑛孔洞263的兩末端處具有處於浮動電 位的遮蔽266、268，因此在基材1〇〇上所沉積之塗層厚 度在基材整體寬度間（即使是在其侧向末端丨丨2處）都是 實質均勻的。舉例而言，利用含有濺鍍陰極26之塗佈腔 ❿ 至10’可使基材100上的塗層厚度均勻度達約±3.5% 此外，因為使用含有陰極260之腔室1〇〇〇來對一或多 個基材100進行塗佈程序，因此在基材1〇〇上所沉積之 塗層厚度在基材整體寬度間（即使是在其周圍處）都是實 質均勻的。 此外，如上所述，在進行上述方法時，可提昇濺鍍陰 極26與260(其各包含處於浮動電位之遮蔽裝置）的侵蝕 輪廓。舉例而言，以下係於濺鍍陰極26實例之不同測量 點（mp)處所進行之靶材輪廓長程測試程序，其具有具兩 201033387 相對末端264之長形鋁（A1)靶材。 表1 測 試 運轉 時間 (h) 施加 能量 (kW/ h) 在起材一端處 所侵蝕之A1厚 度（mm) 在靶材中心處所侵钱之 A1厚度（mm) 總計 總計 mp 1 mp2 mp3 mp4 mp5 m η ή mp7 mp 8 53 1540 3.6 3.5 3.5 2.8 3.9 3.8 3.7 3.6 由表1可見，在使A1靶材暴露於總能量為154〇kw/h 且運轉53小時之後，A1靶材係以實質均勻地被侵蝕， 在整個靶材長度上，所侵蝕之A1材料的厚度係介於 3.4mm±0.6mm的範圍内。 在一實施例中係提供了 一荷電粒子束pvD裝置，其包 含在-殼體内部之一塗佈材料靶材、在該殼體中之一氣 孔、以及與該氣孔相鄰之—遮蔽裝置，該遮蔽裝置係處 於浮動電位。 在一實施例（其可與本發明之其他任何實施例結合） 中’遮蔽裝置係位於氣孔外圍。 在一實施例（其可與本發明之其他任何實施例結合） 中’遮蔽裝置係延伸至氣孔中。 在實施例（其可與本發明之其他任何實施例結合) 中’遮蔽裝置係位於塗佈材料乾材與氣孔之間或氣孔 係位於遮蔽裝置與塗佈材料靶材之間。 20 201033387 在一實施例（其可與本發明之其他任何實施例結合） 中，遮蔽裝置係經由一絕緣連接器而固定至殼體。 在一實施例（其可與本發明之其他任何實施例結合） 中，遮蔽裝置係經由具自遮蔽結構之一絕緣連接器而固 定至殼體。 在一實施例（其可與本發明之其他任何實施例結合） 中’氣孔為具有相對兩末端之長形形式，且遮蔽裝置包 Φ 含至少一種元件，該元件選自由位於其中一個末端處之 一第一遮蔽、以及位於另一末端處之一第二遮蔽所組成 之群組。 在一實施例（其可與本發明之其他任何實施例結合） 中’遮蔽裝置與靶材之間的距離介於4〇nirn至70mm之 範圍。 在一實施例（其可與本發明之其他任何實施例結合） 中’遮蔽裝置與靶材之間的距離為至少55mm。 # 在一實施例（其可與本發明之其他任何實施例結合） 中’該荷電粒子束pVD裝置係選自一電子束PVD裝置、 一離子束PVD裝置、一濺鍍裝置、一電漿濺鍍裝置、一 荷電粒子束濺鍍裝置、一電子束濺鍍裝置與一離子束濺 鍍裝置之至少一元件。 在一實施例中係提供了一種荷電粒子束PVD裝置之 遮蔽裝置，該荷電粒子束PVD裝置包含在一殼體内部之 一塗佈材料靶材、在該殼體中之一氣孔、以及與該氣孔 相鄰之一遮蔽裝置’該遮蔽裝置係處於浮動電位。 21 201033387 一實施例（其可與本發明之其他任何實施例結合）係包 含一絕緣連接器，其具有自遮蔽結構且用以將遮蔽裝置 固定至一荷電粒子束PVD裝置。Since the masking device including the shadow frame 2680 is at a floating potential, the erosion profile of the target of the sputter cathode 260 can be improved. This means that the target can be eroded more evenly, which extends the life of the target. The substantial uniform erosion of the target is due to the shape of the electric field at the edge of the vent, and this is because the shielding device adjacent to the vent is a floating potential; thereby, it can be adjusted at the edge of the vent and/or across the vent The potential gradient causes the plasma to not be adversely reverberated and can be more evenly distributed between the dry materials. In addition, due to the shielding effect of the shielding device, the coating material particles are ejected from the dry material in a manner more toward the substrate; therefore, the thickness of the coating on the exposed portion (for example, the side portion) of the substrate supporting seat can be reduced while The thickness of the coating on the substrate is substantially uniform, thereby extending the time interval of the π clean of the substrate support. In addition, since the thick layer of the coating material of the substrate support can be avoided (this thick layer absorbs moisture in the air when the chamber is emptied), instability during the coating process can be eliminated. In one embodiment, a method of coating a plurality of substrates in a coating chamber according to an embodiment includes: providing a substrate on a support pad of a coating chamber having the coating chamber A charged particle beam pvD device according to any of the preceding embodiments; and a coating material is applied to the substrate from the charged particle 201033387 PVD device. In accordance with another embodiment, a method of coating one or more substrates in a coating chamber comprises: providing a coating chamber as described in any of the preceding embodiments or examples; providing a substrate to the substrate A coating material is applied to the substrate on the substrate support of the coating chamber and from the charged particle beam PVD device in the coating chamber. For example, these methods can be practiced using the coating chamber 1〇 described above or coating the φ chamber 1000, which respectively includes a plasma sputter cathode 26 or 260 as a charged particle beam PVD device. For example, in a coating method using a coating chamber, the substrate 100 is continuously or discontinuously conveyed under the sputtering cathode 26 in operation. Since the cathode 26 has masks 266, 268 at floating ends at both ends of the splash hole 263, the thickness of the coating deposited on the substrate 1 is between the overall width of the substrate (even at its lateral ends).丨丨 2) are all substantially uniform. For example, the coating thickness 基材 to 10' containing the sputter cathode 26 can be used to achieve a coating thickness uniformity of about ±3.5% on the substrate 100. Furthermore, since the chamber containing the cathode 260 is used, The coating procedure is performed on one or more of the substrates 100 such that the thickness of the coating deposited on the substrate 1 is substantially uniform across the entire width of the substrate, even at its periphery. Further, as described above, in carrying out the above method, the erosion profile of the sputtered cathodes 26 and 260, each of which includes a shielding device at a floating potential, can be enhanced. For example, the following is a target profile long range test procedure performed at different measurement points (mp) of the sputter cathode 26 example with an elongated aluminum (A1) target having two 201033387 opposite ends 264. Table 1 Test run time (h) Applied energy (kW/h) A1 thickness (mm) eroded at one end of the material A1 thickness (mm) at the center of the target Total mp 1 mp2 mp3 mp4 mp5 m η ή mp7 mp 8 53 1540 3.6 3.5 3.5 2.8 3.9 3.8 3.7 3.6 It can be seen from Table 1 that after the A1 target is exposed to a total energy of 154 〇kw/h and operated for 53 hours, the A1 target is substantially uniformly eroded. The thickness of the eroded A1 material is in the range of 3.4 mm ± 0.6 mm over the entire target length. In one embodiment, a charged particle beam pvD device is provided, comprising a coating material target inside the housing, a pore in the housing, and a shielding device adjacent to the air hole, The screening device is at a floating potential. In an embodiment (which may be combined with any other embodiment of the invention) the 'shading device is located at the periphery of the vent. In an embodiment (which may be combined with any other embodiment of the invention) the 'shading device extends into the vent. In an embodiment (which may be combined with any other embodiment of the invention) the 'shading device is located between the dry material of the coating material and the air vent or between the air venting system and the coating material target. 20 201033387 In an embodiment (which may be combined with any other embodiment of the invention), the screening device is secured to the housing via an insulated connector. In an embodiment (which may be combined with any other embodiment of the invention), the screening device is secured to the housing via an insulated connector having one of the self-shielding structures. In an embodiment (which may be combined with any other embodiment of the invention) the 'pore is an elongated form having opposite ends, and the screening means Φ comprises at least one element selected from the group consisting of one end a first mask, and a group of second masks at the other end. In an embodiment (which may be combined with any other embodiment of the invention) the distance between the screening device and the target is in the range of 4 〇 nirn to 70 mm. In an embodiment (which may be combined with any other embodiment of the invention) the distance between the screening device and the target is at least 55 mm. In an embodiment (which may be combined with any other embodiment of the invention), the charged particle beam pVD device is selected from the group consisting of an electron beam PVD device, an ion beam PVD device, a sputtering device, and a plasma splash. At least one component of a plating apparatus, a charged particle beam sputtering apparatus, an electron beam sputtering apparatus, and an ion beam sputtering apparatus. In one embodiment, a shielding device for a charged particle beam PVD device is provided, the charged particle beam PVD device comprising a coating material target inside a housing, a vent in the housing, and One of the venting holes adjacent to the shielding device is a floating potential. 21 201033387 An embodiment (which may be combined with any other embodiment of the invention) includes an insulated connector having a self-shielding structure and for securing the screening device to a charged particle beam PVD device.
在一實施例中提供了一種用於塗佈基材的塗佈腔室， 其包含一基材支撐座與一荷電粒子束pvD裝置；該荷電 粒子束PVD裝置包含在一殼體内部之一塗佈材料靶材、 在該殼體中之一氣孔、以及與該氣孔相鄰之一遮蔽裝 置’該遮蔽裝置係處於浮動電位。 在一實施例（其可與本發明之其他任何實施例結合） 中，該遮蔽裝置具有自遮蔽結構且用以將遮蔽裝置固定 至一荷電粒子束PVD裝置。 在一實施例（其可與本發明之其他任何實施例結合） 中，該基材支撐座包含一傳送系統以於一傳送路徑令傳 送該一或多個基材，該荷電粒子束PVD裝置包含一長形 氣孔，其具有彼此相對之兩末端，且該遮蔽裝置包含至 V —個7G件，該元件選自由位於該等末端中一末端處之 第一遮蔽及位於另一末端處之一第二遮蔽所組成之群 組’且其中該荷電粒子束pVD裝置係位於該塗佈腔室 中，使得該長形氣孔係橫跨該傳送路徑。 在一實施例（其可與本發明之其他任何實施例結合） 該傳送路控具有彼此相對的兩個邊界，且該荷電粒 子束PVD裝置係位於該塗佈腔室中，使得該第一遮蔽面 向該傳送路㈣—邊界，且該第二遮蔽面向該傳送路徑 的另一邊界。 22 201033387 在一實施例中提供了一種在一塗佈腔室令塗佈—或多 個基材的方法，其包含：提供一基材於具有一荷電粒子 束PVD裝置的塗佈腔室的一基材支撐座上，其中該荷電 粒子束PVD裝置具有在一殼體内部之一塗佈材料乾材、 在該殼體中之一氣孔、以及與該氣孔相鄰之一遮蔽裝 置’該遮蔽裝置係處於浮動電位；以及從該荷電粒子束 PVD裝置對該基材施配塗佈材料。 在一實施例（其可與本發明之其他任何實施例結合） 中，遮蔽裝置係經由選自一群組之至少一元件而固定至 殼體，該群組由一絕緣連接器、以及具有自遮蔽結構之 一絕緣連接器所組成。 在一實施例（其可與本發明之其他任何實施例結合） 中，該基材支撐座包含一傳送系統以於一傳送路徑中傳 送該一或多個基材，該荷電粒子束PVD裝置包含一長形 氣孔，其具有彼此相對之兩末端，且該遮蔽裝置包含至 少一種元件，該元件選自由位於該等末端中一末端處之 一第一遮蔽及位於另一末端處之一第二遮蔽所組成之群 組，且其中該荷電粒子束PVD裝置係位於該塗佈腔室 中’使得該長形氣孔係橫跨該傳送路徑。 在實施例（其可與本發明之其他任何實施例結合） 中，該方法更包含：藉由將基材饋送至塗佈腔室中並將 基材配置在基材支撐座上而提供基材；在自荷電粒子束 PVD裝置施配塗佈時，傳送系統在傳送方向中連續或非 連續傳送基材；以及自塗佈腔室卸除基材。 23 201033387 在該方法之一脊1 I施例（其可與本發明之其他任何實施 例結口）中，該傳送路經具有彼此相對的兩個邊界，且該 荷電粒子束PVD裝置係位於該塗佈腔室中，使得該第一 遮蔽面向該傳送路扼t m ^ 的一邊界’且該第二遮蔽面向該傳 送路徑的另一邊界。 上述說明係使用實例揭示本發明纟包含最佳實施 例，以使該領域技術人士#以實行及使用本發明。由於 φ 本發明係以各種特定實施例予以說明，該領域技術人士 定可瞭解在中請專利範圍之精神與範_内可對本發明進 行諸夕修飾後實施；特別是，上述實施例中彼此不排斥 的特徵係可彼此結合。本發明之專利範圍係由申請專利 範圍予以界定，且其可包含該領域技術人士所能據以推 知的其他實例，這些實例仍落於本發明申請專利範圍之 範疇中。 上述說明係針對本發明之實施例，本發明之其他實施 © 例係可在不背離其基本範疇下推得，其範疇係由下述申 请專利範圍所界定》 【圖式簡單說明】 參考某些繪示於附圖的實施例，可得到之前簡要總括 的本發明之更詳細之描述’如此，可詳細瞭解之前陳述 的本發明的特色。伴隨的圖式係關於本發明之實施例且 於後描述。可參考以下之圖式而在隨後的一般實施例或 24 201033387 範例之緣圖中得到某些上述實施例更詳細之說明。 第1圖示意說明了一塗佈腔室的畚而鹿 』聚面圈，該塗佈腔室 具有兩個根據本發明實施例之荷電粒子束裝置. 第2圖示意說明了沿第1圖中α_α蟪於-^ _ *~*τ 線所不之塗佈腔室 截面圖； 第3圖說明了根據本發明實施例之方法的流程圖； 第4圖示意說明了第！圖_其中一個荷電粒子束ρν〇 裝置的底視圖； 第5圖示意說明了根據本發明實施例之荷電粒子束 PVD裝置的部分截面圖，該荷電粒子束pvD裝置包含一 絕緣連接器； 第6a圖與第6b圖各示意說明根據本發明實施例之荷 電粒子束PVD裝置的絕緣連接器之結構；以及 第7a圖與第7b圖分別根據本發明實施例而示意說明 一塗佈腔室與一荷電粒子束PVD裝置的底視圖。 【主要元件符號說明】 10 塗佈腔室 12 下壁 14 上壁 16 前壁 17 侧壁 18 後壁 20 基材饋送開口 22 基材卸除開 26 濺鍍陰極 30 傳送系統 31 前側 32 滾捲 25 201033387 33 環件 36 覆蓋板 60 傳送路徑 100 基材 105 前側 110 背側 112 側端 114 側邊 120 支撐平面 261 殼體 262 靶材 263 氣孔 264 末端 265 固定部 266 遮蔽裝置 268 遮蔽裝置 270 絕緣連接器 500 間隙 1000 塗佈腔室 2611 開口 2680 遮蔽框 2681 開口 2700 絕緣連接器 2701、 2702 分枝 2713 絕緣第一部分 2714 絕緣第二部分 2715 螺紋 2716 間隙 2717 固定螺絲 26In one embodiment, a coating chamber for coating a substrate is provided, comprising a substrate support and a charged particle beam pvD device; the charged particle beam PVD device comprising one of the interiors of a housing A cloth material target, one of the air holes in the housing, and a shielding device adjacent to the air hole 'the shielding device is at a floating potential. In an embodiment (which may be combined with any other embodiment of the invention), the screening device has a self-shielding structure and is used to secure the screening device to a charged particle beam PVD device. In an embodiment (which may be combined with any other embodiment of the invention), the substrate support includes a transport system for transporting the one or more substrates in a transport path, the charged particle beam PVD device comprising An elongated pore having two ends opposite to each other, and the shielding means comprising to a V-piece of 7G, the element being selected from the first shadow at one end of the ends and one at the other end The group consisting of two masks and wherein the charged particle beam pVD device is located in the coating chamber such that the elongated pores straddle the transport path. In an embodiment (which may be combined with any other embodiment of the invention) the transfer path has two boundaries opposite each other, and the charged particle beam PVD device is located in the coating chamber such that the first mask Facing the transmission path (four) - the boundary, and the second shielding faces the other boundary of the transmission path. 22 201033387 In one embodiment there is provided a method of coating a substrate or a plurality of substrates in a coating chamber, comprising: providing a substrate to a coating chamber having a charged particle beam PVD device a substrate support, wherein the charged particle beam PVD device has a coating material dry material inside a casing, a gas hole in the casing, and a shielding device adjacent to the air hole. Is at a floating potential; and applying a coating material to the substrate from the charged particle beam PVD device. In an embodiment (which may be combined with any other embodiment of the invention), the screening device is secured to the housing via at least one component selected from the group consisting of an insulated connector and having One of the shielding structures is composed of an insulating connector. In an embodiment (which may be combined with any other embodiment of the invention), the substrate support includes a transport system for transporting the one or more substrates in a transport path, the charged particle beam PVD device comprising An elongate air vent having opposite ends opposite each other, and the screening means comprising at least one element selected from the group consisting of a first shield at one end of the ends and a second shield at the other end The group of components, and wherein the charged particle beam PVD device is located in the coating chamber, such that the elongated pores straddle the transport path. In an embodiment (which may be combined with any other embodiment of the invention), the method further comprises: providing the substrate by feeding the substrate into the coating chamber and disposing the substrate on the substrate support The transfer system continuously or non-continuously transports the substrate in the transport direction when the coating is applied from the charged particle beam PVD device; and the substrate is removed from the coating chamber. 23 201033387 In one of the methods of the method, which can be combined with any other embodiment of the invention, the transmission path has two boundaries opposite each other, and the charged particle beam PVD device is located The coating chamber is such that the first shield faces a boundary ' of the transport path 扼tm ^ and the second shield faces the other boundary of the transport path. The above description is intended to be illustrative of the invention, and is intended to Since the present invention has been described in terms of various specific embodiments, those skilled in the art will understand that the invention may be practiced in the spirit and scope of the patent scope; in particular, the above embodiments do not Repulsive features can be combined with each other. The patentable scope of the present invention is defined by the scope of the claims of the invention, and may include other examples that can be inferred by those skilled in the art, which are still within the scope of the invention. The above description is directed to the embodiments of the present invention, and other embodiments of the present invention can be deduced without departing from the basic scope thereof, and the scope thereof is defined by the scope of the following patent application. [Simplified description of the drawings] DETAILED DESCRIPTION OF THE INVENTION A more detailed description of the present invention, which has been briefly described in the foregoing, can be obtained by way of example only. The accompanying drawings are related to the embodiments of the present invention and will be described later. A more detailed description of some of the above embodiments can be obtained by reference to the following figures in the following general description or the accompanying drawings of FIG. Figure 1 is a schematic illustration of a coating chamber having a crucible and a deer" coating chamber having two charged particle beam devices in accordance with an embodiment of the present invention. Figure 2 is a schematic illustration of the first In the figure, α_α 蟪 is a cross-sectional view of the coating chamber which is not in the line of -^ _ *~*τ; FIG. 3 illustrates a flow chart of the method according to an embodiment of the present invention; FIG. 4 schematically illustrates the first! Figure 5 is a bottom plan view of a charged particle beam ρν〇 device; Figure 5 is a partial cross-sectional view of a charged particle beam PVD device according to an embodiment of the present invention, the charged particle beam pvD device comprising an insulated connector; 6a and 6b each schematically illustrate the structure of an insulated connector of a charged particle beam PVD device according to an embodiment of the present invention; and FIGS. 7a and 7b respectively illustrate a coating chamber according to an embodiment of the present invention. A bottom view of a charged particle beam PVD device. [Main component symbol description] 10 Coating chamber 12 Lower wall 14 Upper wall 16 Front wall 17 Side wall 18 Rear wall 20 Substrate feed opening 22 Substrate removal 26 Sputtering cathode 30 Transfer system 31 Front side 32 Rolling 25 201033387 33 Ring 36 Covering plate 60 Transport path 100 Substrate 105 Front side 110 Back side 112 Side end 114 Side 120 Support plane 261 Housing 262 Target 263 Air hole 264 End 265 Fixing portion 266 Shielding device 268 Shielding device 270 Insulating connector 500 Gap 1000 Coating chamber 2611 Opening 2680 Shadow frame 2681 Opening 2700 Insulation connector 2701, 2702 Branch 2713 Insulation first portion 2714 Insulation second portion 2715 Thread 2716 Clearance 2717 Fixing screw 26