CN102356178A - Charged particle beam pvd device, shielding device, coating chamber for coating substrates, and method of coating - Google Patents
Charged particle beam pvd device, shielding device, coating chamber for coating substrates, and method of coating Download PDFInfo
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- CN102356178A CN102356178A CN201080012706XA CN201080012706A CN102356178A CN 102356178 A CN102356178 A CN 102356178A CN 201080012706X A CN201080012706X A CN 201080012706XA CN 201080012706 A CN201080012706 A CN 201080012706A CN 102356178 A CN102356178 A CN 102356178A
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- 238000000576 coating method Methods 0.000 title claims abstract description 152
- 239000011248 coating agent Substances 0.000 title claims abstract description 137
- 239000002245 particle Substances 0.000 title claims abstract description 85
- 239000000758 substrate Substances 0.000 title claims description 142
- 238000000034 method Methods 0.000 title claims description 28
- 239000000463 material Substances 0.000 claims abstract description 56
- 238000005240 physical vapour deposition Methods 0.000 claims description 80
- 239000011148 porous material Substances 0.000 claims description 79
- 238000004544 sputter deposition Methods 0.000 claims description 48
- 238000012546 transfer Methods 0.000 claims description 47
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 29
- 238000002294 plasma sputter deposition Methods 0.000 claims description 13
- 230000000873 masking effect Effects 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000001017 electron-beam sputter deposition Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 38
- 238000009413 insulation Methods 0.000 description 21
- 230000003628 erosive effect Effects 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 239000012777 electrically insulating material Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229920002994 synthetic fiber Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A charged particle beam PVD device is provided, including a target (262) of coating material inside of a casing (261), a vapor aperture (263) provided in the casing, and a shielding device (266, 268; 2680) provided adjacent to the vapor aperture, the shielding device being on floating potential.
Description
Technical field under the invention
The embodiment of the invention relates to charged particle beam PVD device, shading unit, is used for the coating chamber and the coating process of coated substrate.Specific embodiment relate to charged particle beam PVD device, the charged particle beam PVD device of the coating chamber that is used for coated substrate shading unit, be used for the coating chamber of coated substrate and in the method for the one or more substrates of a coating chamber coating.
Prior art
Available multiple mode forms like the material film coating on the plate shaped substrate, and said mode is for example by modes such as the vapor deposition of coating material or sputters.
At some known PVD (physical vapor deposition, Physical Vapor Deposition) substrate is coated with in the vacuum apparatus of (the for example glass substrate) that go up thin layer, has several cells (Compartments) of arranging in regular turn through the use (cathode) sputtering.In these cells at least one comprises at least one sputtering cathode and process gas inlet and is connected to the vacuum pump that exhaust is used.These cells can be connected to each other by opening (generally being vacuum lock or air lock), and this opening can comprise one or more slit valve (Slit Valve).As substrate support pedestal, the transfer system with transfer roller can be provided, transfer roller is used for the path of along sputtering cathode the place ahead (for example below) and transmits substrate and make substrate pass through the opening between the cell.
In an example of operation sputtering cathode, produce plasma body, and the acceleration of ions of plasma body is to the coating material target of desiring to be deposited on the substrate.The bombardment of target causes the coating material atom to penetrate, and this coating material atom becomes the deposit film on the substrate through the sputter hole and the accumulation of sputtering cathode.
In exemplary, for example, can use elongated sputtering cathode with elongated sputter hole for being coated with the plate shaped substrate that is transmitted continuously.Elongated sputter hole can be across the width (for example with the vertical dimension of delivery direction) of the plate shaped substrate that before the sputter hole, transmits.Use in the known sputter coating operation of elongated sputtering cathode at some, the part of substrate support pedestal (for example side direction part) does not hope to be applied.When the chamber emptying, the coating material thick-layer on substrate support pedestal can absorb the moisture in the atmosphere, and this possibly cause the unstable during the coating process.What is more, the coat-thickness that is deposited on the substrate maybe be inhomogeneous on the entire substrate width; In addition, the erosion profile of target (erosion profile) maybe be inhomogeneous on the whole sputter zone of target.
Summary of the invention
In view of the above, provide a kind of like independent claim 1 described charged particle beam PVD device, a kind of like independent claim 8 described shading units, a kind of like independent claim 9 described coating chambers and a kind of method that in the coating chamber, is coated with one or more substrates as claimed in claim 12.
A kind of charged particle beam PVD device is provided in one embodiment, and this device comprises: the coating material target of enclosure interior, be arranged in this housing pore and with the shading unit of the adjacent setting of this pore, this shading unit is in floating potential.
A kind of shading unit of charged particle beam PVD device is provided in another embodiment; This charged particle beam PVD device comprises: at the coating material target of enclosure interior, and be arranged on the pore in this housing; This shading unit is suitable for being adjacent to setting and being suitable for being arranged at floating potential with this pore.
A kind of coating chamber that is used for coated substrate is provided in another embodiment, and this coating chamber comprises substrate support pedestal and charged particle beam PVD device; This charged particle beam PVD device comprises: the coating material target of enclosure interior, be arranged in this housing a pore and with the shading unit of the adjacent setting of this pore, this shading unit is in floating potential.
Among the embodiment a kind of method that in the coating chamber, is coated with one or more substrates is being provided again; This method comprises: on the substrate support pedestal of the coating chamber with charged particle beam PVD device, substrate is set; Wherein this charged particle beam PVD device comprises: the coating material target of enclosure interior, be arranged in this housing a pore and with a shading unit of the adjacent setting of this pore, this shading unit is in floating potential; And this undercoat is joined coating material from this charged particle beam PVD device.
Can know other details of understanding and characteristic from dependent claims, embodiment and accompanying drawing.
Each embodiment of the present invention also relates to and is used to implement the method that disclosed, and comprises the device of the device feature that is used to carry out described method steps.In addition, each embodiment of the present invention also relates to described device and uses the method for running or the method that described device is used manufacturing, the parts that the method steps that comprises is used to implement the function of this device or makes this device.These method stepss can by nextport hardware component NextPort, firmware, software, through suitable software programming computer, carry out by the arbitrary combination of aforementioned object or with any alternate manner.
The assembly that should conceive among the embodiment can be advantageously used in other embodiment and need not further elaboration.
Brief description of drawingsfig
Be illustrated in the embodiment of accompanying drawing with reference to some, the more detailed description of the present invention of brief overview before can obtaining, so, but the characteristic of the present invention of statement before the detail knowledge.Accompanying drawing relates to each embodiment of the present invention and describes in the back.Can be with reference to following accompanying drawing, in the detailed description of subsequently general embodiment or example, obtain some the foregoing description is illustrated in more detail.
The sectional view of the schematically illustrated coating chamber of Fig. 1, this coating chamber have two charged particle beam PVD devices according to the embodiment of the invention;
Fig. 2 is schematically illustrated along the coating chamber sectional view shown in the A-A line among Fig. 1;
Fig. 3 illustrates the schema according to the method for the embodiment of the invention;
The upward view of one of charged particle beam PVD device shown in the schematically illustrated Fig. 1 of Fig. 4;
The partial cross section figure of the schematically illustrated charged particle beam PVD device according to the embodiment of the invention of Fig. 5, this charged particle beam PVD device comprises an insulated connectors;
The structure of the insulated connectors of the schematically illustrated separately charged particle beam PVD device according to the embodiment of the invention of Fig. 6 a and Fig. 6 b; And
Fig. 7 a and Fig. 7 b are schematically illustrated respectively according to the coating chamber of the embodiment of the invention and the upward view of charged particle beam PVD device.
Embodiment
Existing will with reference to each embodiment the one or more examples shown in the accompanying drawing be described in detail, each example only be explanation with providing, be not to be used to limit the present invention.
The typically used of charged particle beam PVD device, shading unit, coating chamber and the coating process of embodiment described herein in the PVD of coating apparatus cell, vacuum splashing and plating cell for example.Therefore, charged particle beam PVD device, shading unit and coating chamber can comprise the vacuum compatible material or be made up of the vacuum compatible material.Charged particle beam PVD device can be used in particular for being used for being coated with the continuous delivering with film or the equipment of the plate shaped substrate of discontinuous delivering.Be fabricated to example with solar cell, when coating had the glass substrate (for example plate shaped glass substrate) of metallic film (for example silver-colored film), these embodiment were particularly useful.
The described charged particle beam PVD of embodiment of the invention device for example can be electron beam PVD device, ionic fluid PVD device, sputtering apparatus, plasma sputtering device, charged particle beam sputtering apparatus, electron beam sputtering apparatus or ionic fluid sputtering apparatus.
Below relate to the plasma sputtering device, as the charged particle beam PVD device that in the vacuum coated chamber, is used for coated substrate, but this does not limit the scope of the invention.Embodiments of the invention can be to film silver (Ag) coating of rectangular flat shape glass substrate.The embodiment of the invention also can be applicable to other charged particle beam PVD device and coating process, and is applied to other coating material beyond the desilver, for example other metal or alloy (like aluminium).In addition, also can use other substrate, such as volume strip or plastics film with modified shape.In addition, substrate can be sent to the coating chamber continuously or be provided in the coating chamber with non-continuous mode.In addition, the coating chamber is not limited to vacuum chamber.Under the situation of limited field not, the pore of charged particle beam PVD device also is referred to as the sputter hole in the present invention.In addition, the target of charged particle beam PVD device is also referred to as sputter target in the present invention.
Fig. 1 is the sectional view that coating chamber 10 is shown with a typical case, the vacuum splashing and plating chamber of the film coated of the rectangular flat shape glass substrate 100 that this coating chamber 10 is designed to transmit continuously; Fig. 2 illustrates along the sectional view of the coating chamber 10 shown in the A-A line among Fig. 1.Coating chamber 10 comprises lower wall 12, upper wall 14, antetheca 16, rear wall 18 and two sidewalls 17; The material of all wall bodies is a stainless steel, and coating chamber 10 is a vacuum tight.Antetheca 16 comprises substrate and presents opening 20, and rear wall 18 comprises substrate removal opening 22.Substrate is presented with removal opening 20,22 can be designed to vacuum lock or gas lock (being typically designed to slit valve), is used in the vacuum of presenting and keep during removal glass substrate 100 coating chamber 10.Coating chamber 10 further has process gas inlet (not shown), and coating chamber 10 is connected to the vacuum pump (not shown), to set up about 10
-6The vacuum tightness of holder ear (Torr).Certainly should be appreciated that: 10
-6The force value of holder ear should only be an example, and other range of pressure values also is feasible.For example, the typical pressures range of sputter is between 10
-3HPa to 10
-2Between the hPa, the typical pressures range of vapor deposition is between 10
-6HPa is with down to 10
-3HPa, more the typical case is between 10
-5HPa to 10
-4Scope between hPa.
In addition, be provided with at least one plasma sputtering negative electrode 26 (generally being two) at upper wall 14 places, these plasma sputtering negative electrode 26 each self-contained silver medal targets make coating material be dispersed to the plasma sputtering device of coating chamber as being used for.In the present invention, plasma sputtering negative electrode 26 is also referred to as sputtering cathode 26.
The transfer system 30 that is used for transmitting continuously a plurality of glass substrate 100 is installed on the lower wall 12 as substrate support pedestal, like Fig. 1 and shown in Figure 2.Transfer system 30 has the front side 31 towards sputtering cathode 26, and transfer system 30 is applicable to one or more plate shaped glass substrate 100 are supported on the front side 31.Transfer system 30 comprises a plurality of (generally being two) rotatable roller 32, these rotatable rollers 32 are arranged continuously to rear wall 18 from antetheca 16 in parallel with each other and are arranged in whole coating chamber 10.Roller 32 extends to another relative sidewall 17 from a sidewall 17; In addition, each roller 32 is positioned at wrapper plate 36 belows of transfer system 30, and each roller 32 comprises a plurality of isolated rings 33, and ring 33 is attached to this roller 32 separately with one heart.Ring 33 extends through opening and the support glass substrate 100 in the wrapper plate 36 of transfer system 30, above wrapper plate 36, defines a substrate supports plane 120 thus; Substrate supports plane 120 is shown dotted line in Fig. 1 and Fig. 2.The front side 105 of the glass substrate 100 that is supported on the ring 33 is in the face of sputtering cathode 26; Wrapper plate 36 places the front side 31 of transfer system, and wrapper plate 36 have mounting height with the about 2mm in below that causes this wrapper plate 36 and be positioned substrate supports plane 120 usually to about 12mm place.
In an alternate design (not illustrating at accompanying drawing) of transfer system, the diameter of a plurality of rollers is littler many than the diameter of a plurality of rings.Each ring can then be attached to a wheel body (this wheel body is attached to one of these rollers).Therefore, each roller can have a plurality of isolated wheel body that is attached to roller separately with one heart.Each wheel body supports a ring at the outermost peripheral place of wheel body.Ring support glass substrate 100, and define substrate supports plane 120 (being also referred to as supporting plane 120 in the present invention) thus in the front side 31 of substrate support pedestal.
Below be the example of the coating process of each embodiment according to the present invention, the beginning of this coating process is schematically illustrated in Fig. 3.First glass substrate 100 (n-1 glass substrate; N is >=2 integer) front end get into coating chamber 10.Then open sputtering cathode 26 or sputtering cathode 26 in running.Be coated on 105 last times of front side with silver particles, transmitting continuously below the sputtering cathode 26 of first glass substrate 100 in running and through coating chamber 10.After the rear end of first glass substrate 100 had got into coating chamber 10, second (n) glass substrate 100 was presented opening 20 through substrate and is fed in the coating chamber 10.Second glass substrate 100 is arranged on the ring 33 of transfer system 30 and on transfer system 30 and transmits.Likewise, be coated on 105 last times of front side with silver particles, transmitting continuously below the sputtering cathode 26 of second glass substrate 100 in running and through coating chamber 10.During the transmission of second glass substrate 100, in process very first time section and after second time period, the front-end and back-end of first glass substrate 100 that transmits are arrived at removal opening 22 successively and are passed through removal opening 22 removals continuously; As is known to the person skilled in the art, the very first time section and second time period are depended on the length (that is the front end of first glass substrate 100 and the distance between the rear end) of first glass substrate 100.Afterwards, the front end of second glass substrate 100 arrives at substrate removal opening 22 and from coating chamber 10 removals.At last, after the time period of passing through the length that depends on second glass substrate 100, the coating process of second glass substrate 100 has been accomplished through substrate removal opening 22 removals in the rear end of second glass substrate 100 therefore.
For example as shown in Figure 2, each glass substrate 100 has a front side 105, front side 105 to be coated and glass substrate during transmitting on the transfer system 30 towards sputtering cathode 26.Each glass substrate 100 also comprises dorsal part 110, dorsal part 110 and this front side 105 relative and during glass substrate transmits towards transfer system 30, each glass substrate 100 also comprises two sides 112, these two sides, 112 each self-contained sides 114.As shown in Figure 2, during transmitting on the transfer system 30, between the side 114 of glass substrate 100 and the sidewall 17 that is coated with chamber 10, can form gap 500 in glass substrate 100.Through gap 500, the transfer system 30 of a part can expose and can unpredictably be coated with by the silver particles that sputtering cathode 26 penetrates.
Typical plasma sputtering negative electrode can comprise housing, at the target of enclosure interior and the pore in housing.Walk to the coating chamber through pore from the coating material particle that target penetrates.It is in uneven thickness that this sputtering apparatus can cause substrate to attend institute's coating deposited.For example, on the substrate uniformity coefficient of coat-thickness be about ± 7%.In addition, the housing parts (for example being in the former shield of earthing potential) around pore can influence the amount that substrate support pedestal (for example transfer system 30) attendes institute's coating deposited material.Moreover former shield or these parts can influence the erosion profile of target, and this will reduce the average probable life of target.
In typical case, pore can be elongated and have two ends respect to one another; Moreover, for example be coated with the coating chamber 10 of the substrate 100 of continuous transmission in Fig. 1 and shown in Figure 2 being used for, can be provided with sputtering cathode 26, so that elongated pore is positioned to across transfer path 60.In some instances, elongated pore can cross the width (that is with the vertical dimension of transfer path) of the plate shaped substrate that transmits in pore the place ahead.In this sputtering apparatus, can increase the coating thickness of substrate 100 sides 112.
According to each embodiment of the present invention, charged particle beam PVD device comprises: the coating material target of enclosure interior, be arranged in this housing a pore and with the shading unit of the adjacent setting of this pore, this shading unit is in floating potential.
Because shading unit is in floating potential, the erosion profile of target thereby can obtain to promote.This expression target can be etched more evenly, and this can prolong the work-ing life of target.The basic evenly erosion of target can be because of due to the electrical field shape of pore edge, and this is because the floating potential of the shading unit adjacent with pore.Plasma body thus, can be adjusted at pore edge and/or, so that can and can not be distributed in entire target by influence unfriendly more equably across the potential gradient of pore.In addition, especially because the shielding effect of shading unit, the coating material particle is more to penetrate from target towards the mode of substrate.Therefore, can be reduced in the coat-thickness on the expose portion (for example sidepiece) of substrate support pedestal, it is even basically that substrate is attend the thickness of institute's coating deposited simultaneously, thereby can prolong the timed interval of cleaning substrate support pedestal.In addition, because can avoid the coating material thick-layer (this thick-layer will absorb airborne moisture when the chamber emptying) on the substrate support pedestal, so can eliminate the unstable during the coating process.
The upward view of one of sputtering cathode shown in the schematically illustrated Fig. 1 of Fig. 4.Sputtering cathode 26 comprises: housing 261, at the coating material target 262 of enclosure interior and be arranged on the pore 263 in this housing.Around pore 263, the part of housing 261 or housing 261 (for example the former shield is not shown) but ground connection.According to each embodiment of the present invention, shading unit 266,268 and pore 263 are adjacent to be provided with.Shading unit 266,268 is arranged to be in floating potential, and/or is made up of a kind of vacuum compatible material or multiple vacuum compatible material.Shading unit can be positioned at the periphery of pore.In the example of some embodiment, shading unit can form a lid, and said lid centers on and covered target 262 and the side zones between the housing 261 around the pore 263.In the example depicted in fig. 4, shading unit 266,268 extends in the pore 263, and between target 262 and pore 263.
Distance between shading unit and the target can be in the scope between the 40mm to 70mm, or is generally 55mm at least.Such distance can avoid shading unit to be out of shape or deterioration because of the high temperature that the sputter running hits.
In the example depicted in fig. 4, pore 263 has elongated shape, and pore 263 has two ends 264 respect to one another, and this shading unit comprises first shield 266 that is arranged on an end 264 and second shield 268 that is arranged on the other end 264.Generally speaking, pore 263 from the length of end 264 a to the other end 264 can between about 900mm to the scope between about 1800mm, for example be about 1560mm.First and second shield 266,268 extends in the pore 263.The length that being used to of being produced discharges the opening of the coating material particle that penetrates from target generally extremely in the scope of about 1600mm, for example is being about 1360mm between about 700mm.
According to the example of some embodiment, shading unit can be mounted to housing via an insulated connectors.By this, shading unit and housing insulation also remain floating potential, and this housing is ground connection at least in part.Like Fig. 4 and shown in Figure 5, shading unit can be fixed in insulated connectors fixed part 265 in housing 261 inside between target 262 and housing 261.
The partial cross section figure of the right part 264 of the plasma sputtering device 26 shown in the schematically illustrated Fig. 4 of Fig. 5.As shown in Figure 5, shield 268 is installed in the housing 261 at contiguous pore 263 places via insulated connectors 270.The material of insulated connectors is an electrical isolation, and for example vacuum is compatible, the heat-proof synthetic materials, like the material that is the basis with pottery or carbon.For example, the insulating material of the connector may be Teflon
, ceramics and PEEK consisting of at least one material selected from the group consisting of, or contains at least one of the foregoing materials.Insulated connectors 270 makes shield 268 remain floating potential.In the example of some embodiment, insulated connectors 270 has L shaped cross section, and this L shaped cross section has short branch 2701 and long branch 2702.The end of the long branch 2702 of insulated connectors 270 is attached to the housing 261 near pore 263 places by insulated connectors fixed part 265.Shield 268 can be installed in short branch 2701 places of insulated connectors 270.Because the configuration of L shaped cross section shown in Fig. 5 and insulated connectors 270 is, the side zones between the housing 261 around target 262 and the pore 263 is able to cover.In addition, in part example shown in Figure 5, shield 268 can form lid, and said lid centers on and cover the side zones between the housing 261 around target 262 and the pore 263 extraly.
According to some embodiment (these embodiment can combine example or the embodiments of the invention of any other embodiment), shading unit is via having the housing that is mounted to charged particle beam PVD device from the insulated connectors of masking structure.By this, can avoid or even prevent on the surface of insulated connectors, to form the insulation characterisitic variation that conductive film makes insulated connectors because of coating material penetrates.
According to comprising an example that has from the embodiment of the insulated connectors of masking structure, insulated connectors shown in Figure 5 can comprise be connected to short branch 2701 and guide housings 261 prolong branch (further branch) 2703 again, thereby produce the U-shaped junctor.This example is shown in Figure 6.It is slightly shorter than long branch 2702 to prolong branch 2703 again, thereby does not contact with housing 261.This prolongs branch 2703 again and has covered the coating material particle of long branch 2702 to isolate the plasma body between pore 263 and the target 262 and/or to isolate sputter.Therefore, during the sputter process, avoid in long branch 2702, forming the conductive surface coating.By this, the long running at charged particle beam PVD device (for example sputtering apparatus) keeps covering 268 floating potential in the time.
In the example of some embodiment, pore is between shading unit and target.For example, the housing that comprises pore is between shading unit and target.The distance of (for example between housing and the shading unit) can be more generally as about 2mm between about 1.5mm between about 4mm between pore and the shading unit.
Fig. 6 b illustrates another example of the embodiment that comprises insulated connectors 2700, and said insulated connectors 2700 tools are from masking structure.In this example, the housing (not shown in Fig. 6 b) that comprises pore is positioned between shading unit and the target (not shown in Fig. 6 b).In addition, comprising the housing and the distance between the shading unit of pore can be in the scope of about 2mm.Housing 261 comprises a plurality of fixed part openings 2611, and these fixed part openings 2611 are positioned at around the pore with one of the shield of fixed blind device (for example shield 268).In this example, the fixed part opening 2611 of the housing shown in Fig. 6 b 261 is cylindrical.Insulated connectors 2700 comprises the insulation first part 2713 and insulation second section 2714 that each free electrically insulating material forms in this example.The material of insulated connectors 2007 can be that for example vacuum is compatible, heat-proof synthetic materials, the for example material that is the basis with pottery or carbon.For example, the insulating material of the connector 2700 may be Teflon
PEEK composition of the ceramic and at least one material selected from the group consisting of, or contains at least one of the foregoing materials.In an example, this insulation second section 2714 is to be formed by electrically insulating material at least.Insulation first part 2713 can be set in the cylinder open 2611 of housing 261.This insulation first part 2713 has internal thread 2715 to mesh with a retaining screw 2717.In some example, retaining screw also is to be formed by electrically insulating material.This insulation first part 2713 can be fixed on the side of housing 261 towards target (not shown in Fig. 6 b).Insulation first part 2713 is suitable for being mounted to and makes this insulation first part 2713 partly fill this opening 2611, internal thread 2715 can be from housing 261 towards substrate support pedestal the one side entering of (not shown in Fig. 6 b).Insulation second section 2714 forms a ring (for example insulating washer), and this insulation second section 2714 can be positioned at opening 2611 tops, towards a side of the housing of substrate support pedestal.In the insulation first part of insulated connectors and insulation second section 2713, this position between 2714, a gap 2716 can be set, shown in Fig. 6 b.On insulation second section 2714, shield 268 can be installed.For this reason, when shield 268 placement positioning in 261 last times of housing, shield 268 has opening 2681 in the opening 2611 corresponding positions with housing 261.Opening 2681 has the size that is suitable for holding retaining screw 2717.
In the stationary state shown in Fig. 6 b, screw 2717 is fixed in shield 268 on the insulation second section 2714, extends through opening 2611 and gets in the insulation first part 2713, and mesh with screw thread 2715.By this, shield 268 is fixed in housing 261 places with insulation first and second parts 2713,2714.In addition, because gap 2716 and because the insulation first and/or the insulating material of second section 2713,2714 and/or retaining screw 2717, insulated connectors 2700 makes shield 268 remain floating potential.In addition, insulation second section 2714 is between shield 268 and housing 261, and shield 268 is about 2mm with the distance each other that housing 261 is had in this example.Therefore insulate second section 2714 in fact with can form the gas particle of conductive coating on insulation second section 2714 and isolate and be masked.Moreover because gas particle can't get into gap 2716, so insulated connectors 2700 itself can be masked and makes the unlikely inside that is coated on gap 2716 of conductive coatings.Therefore avoid on insulated connectors 2700, forming conductive coatings, said conductive coating will make housing 261 be electrically connected with shield 268.Thereby during the coating process of the charged particle beam PVD device (like sputtering apparatus) that uses the embodiment of the invention, the floating potential that is installed in the shield 268 on the housing 261 can't be affected.
Fig. 7 a illustrates the sectional view as the coating chamber 1000 of another typical case, and this coating chamber 1000 is designed for the vacuum splashing and plating chamber that the glass substrate 100 of stationary support is carried out film coated.Coating chamber 1000 comprises lower wall 12, upper wall (not shown), antetheca (not shown), rear wall (not shown) and two sidewalls 17.The material of all wall bodies all is a stainless steel, and coating chamber 1000 is a vacuum tight.Coating chamber 1000 also comprises process gas inlet (not shown) and is connected to the vacuum pump (not shown) to set up vacuum.For example, the typical pressures range of sputter is between 10
-3HPa to 10
-2Between the hPa, the typical pressures range of vapor deposition is between 10
-6HPa is with down to 10
-3HPa, be more typically between 10
-5HPa to 10
-4Scope between the hPa.
On the lower wall 12 of coating chamber 1000, substrate support pedestal 300 is installed, substrate support pedestal 300 is in order to the one or more glass substrate 100 of stationary support.Substrate support pedestal 300 has the front side 31 towards sputtering cathode 260, and is applicable to the one or more plate shaped glass substrate 100 that supports on the front side 31.Coating chamber 1000 can comprise substrate and present opening (not shown) and/or Manipulators (not shown), to transmit substrate 100 turnover chambers 1000.
In addition, be provided with at least one sputtering cathode 260 (generally being two sputtering cathodes 260) at upper wall 14 places, these sputtering cathodes 260 comprise a silver medal target separately as the plasma sputtering device, are assigned in the coating chamber 1000 so that coating material is executed.In the present invention, plasma sputtering negative electrode 260 is also referred to as sputtering cathode 260.
Fig. 7 b is the upward view of sputtering cathode 260, and sputtering cathode 260 comprises housing 261, target 262 and sputter hole 263.Around sputter hole 263, the shading unit that forms shadow frame 2680 is installed on the housing 261 inner close insulated connectors fixed parts 265 at hole place via the insulated connectors (not shown).By this, shadow frame 2680 insulate with housing and remains floating potential.Insulated connectors can have from masking structure, and is for example above said with reference to Fig. 6.In some instances, as with reference to the described example of Fig. 5, shield 2680 can form lid, and/or the form that has of this insulated connectors make side zones between the housing 261 around target 262 and the hole 263 be able to by around and cover.
Be in floating potential owing to comprise the shading unit of shadow frame 2680, thereby the erosion profile of the target of sputtering cathode 260 can obtain to promote.It is more even that this expression target can be etched ground, and this can prolong the work-ing life of target.The even erosion of the essence of target can be because of due to the electrical field shape of pore edge, this be because with the shading unit of pore adjacent positioned be floating potential.Plasma body by this, can be adjusted at pore edge and/or, so that can and can not be distributed in entire target by influence unfriendly more equably across the potential gradient of pore.In addition, especially because the shielding effect of shading unit, the coating material particle is more to penetrate from target towards the mode of substrate.Therefore, can reduce the coat-thickness on the expose portion (for example sidepiece) in substrate support pedestal, it is even basically to attend institute's coating deposited thickness at substrate simultaneously, thereby can prolong the timed interval of cleaning substrate support pedestal.In addition, because avoid the coating material thick-layer (this thick-layer will absorb airborne moisture when the chamber emptying) of substrate support pedestal, so can eliminate the unstable during the coating process.
Therefore; According to an embodiment; A kind of method that in the coating chamber, is coated with one or more substrates comprises: on the substrate support pedestal of coating chamber, a substrate is set, wherein this coating chamber has like aforementioned arbitrary embodiment or the described charged particle beam PVD of example device; And this charged particle beam PVD device is joined coating material to undercoat certainly.
According to another embodiment, a kind of method that in the coating chamber, is coated with one or more substrates comprises: be provided with as aforementioned arbitrary embodiment or the described coating chamber of example; One substrate is set on the substrate support pedestal of this coating chamber; And set charged particle beam PVD device is joined coating material to undercoat from this coating chamber.
For example, these methods can use above-mentioned coating chamber 10 or coating chamber 1000 to carry out, and coating chamber 10 or coating chamber 1000 comprise plasma sputtering negative electrode 26 or 260 respectively as charged particle beam PVD device.
For example, in the coating process that uses coating chamber 10, continuous or discontinuous transmission below the sputtering cathode 26 of substrate 100 in running.Because negative electrode 26 has the shield 266,268 that is in floating potential at the place, two ends of sputter hole 263, it all is uniform basically therefore attending institute's coating deposited thickness lateral end 112 places of substrate (even) on the entirety width at substrate 100.For example, utilize the coating chamber 10 that comprises sputtering cathode 26, the coat-thickness uniformity coefficient on the substrate 100 is reached approximately ± 3.5%
In addition, comprise that the chamber 1000 of negative electrode 260 comes one or more substrates 100 are carried out coating process owing to use, it all is uniform basically therefore attending institute's coating deposited thickness on the entirety width (even at substrate perimeter place) at substrate 100.
In addition, as stated, when carrying out aforesaid method, can promote the erosion profile of sputtering cathode 26 and 260 (sputtering cathode 26 and 260 each self-contained shading unit that are in floating potential).For example, below present the long-time test process of the target contour that the different measuring point (mp) of test sputtering cathode 26 examples locates, sputtering cathode 26 has the elongated aluminium of two opposed ends 264 (Al) target is arranged.
Table 1
Visible by table 1, after making the Al target be exposed to total energy 1540kW/h and turning round 53 hours, the Al target is etched basically equably, and the thickness of attending the erosive Al of institute material in entire target length is in the scope of 3.4mm ± 0.6mm.
Charged particle beam PVD is provided device in one embodiment, has comprised: the coating material target of enclosure interior, be arranged in this housing pore and with the shading unit of the adjacent setting of this pore, this shading unit is in floating potential.
In an embodiment (can combine with other any embodiment of the present invention), shading unit is positioned at the periphery of pore.
In an embodiment (can combine with other any embodiment of the present invention), shading unit extends in the pore.
In an embodiment (can combine) with other any embodiment of the present invention, shading unit between coating material target and the pore or pore between shading unit and coating material target.
In an embodiment (can combine with other any embodiment of the present invention), shading unit is mounted to housing via an insulated connectors.
In an embodiment (can combine with other any embodiment of the present invention), shading unit is mounted to housing via the insulated connectors that has from masking structure.
In an embodiment (can combine) with other any embodiment of the present invention; Pore is the elongated shape with relative two ends; And shading unit comprises at least one assembly, and this assembly is selected from by being positioned at first shield of locating one of end and being positioned at the group that second shield at the other end place is formed.
In an embodiment (can combine with other any embodiment of the present invention), the distance between shading unit and the target is in the scope of 40mm to 70mm.
In an embodiment (can combine with other any embodiment of the present invention), the distance between shading unit and the target is 55mm at least.
In an embodiment (can combine with other any embodiment of the present invention), this charged particle beam PVD device is at least one assembly that is selected from electron beam PVD device, ionic fluid PVD device, sputtering apparatus, plasma sputtering device, charged particle beam sputtering apparatus, electron beam sputtering apparatus and ionic fluid sputtering apparatus.
A kind of shading unit of charged particle beam PVD device is provided in one embodiment; This charged particle beam PVD device comprises: the coating material target of enclosure interior, be arranged in this housing pore and with the shading unit of the adjacent setting of this pore, this shading unit is suitable for being in floating potential.
One embodiment (can combine with other any embodiment of the present invention) comprises insulated connectors, and insulated connectors has from masking structure and is suitable for shading unit is mounted to a charged particle beam PVD device.
A kind of coating chamber that is used for coated substrate is provided in one embodiment, and this coating chamber comprises substrate support pedestal and charged particle beam PVD device; This charged particle beam PVD device comprises: the coating material target of enclosure interior, be arranged in this housing pore and with the shading unit of the adjacent setting of this pore, this shading unit is in floating potential.
In an embodiment (can combine with other any embodiment of the present invention), this shading unit comprises insulated connectors, and insulated connectors has from masking structure and is suitable for shading unit is mounted to a charged particle beam PVD device.
In an embodiment (can combine) with other any embodiment of the present invention; This substrate support pedestal comprises transfer system; This transfer system is suitable for transmitting these one or more substrates along transfer path; This charged particle beam PVD device comprises elongated pore; This elongated pore has two ends respect to one another; And this masking device comprises at least one assembly; This assembly is selected from by being arranged on the group that first shield of locating one of end and second shield that is positioned at place, the other end are formed; And wherein this charged particle beam PVD device is arranged in this coating chamber, so that this elongated pore is positioned to across this transfer path.
In an embodiment (can combine) with other any embodiment of the present invention; This transfer path has two borders respect to one another; And this charged particle beam PVD device is arranged in this coating chamber; So that this first shield is towards a border of this transfer path, and this second shield is towards another border of this transfer path.
A kind of method that in the coating chamber, is coated with one or more substrates is provided in one embodiment; This method comprises: on the substrate support pedestal of the coating chamber with charged particle beam PVD device, a substrate is set; Wherein this charged particle beam PVD device comprises: the coating material target of enclosure interior, be arranged in this housing pore and with the shading unit of the adjacent setting of this pore, this shading unit is in floating potential; And this undercoat is joined coating material from this charged particle beam PVD device.
In an embodiment (can combine with other any embodiment of the present invention), shading unit is mounted to housing via at least one assembly that is selected from a group, and this group is by insulated connectors and have from the insulated connectors of masking structure and form.
In an embodiment (can combine) with other any embodiment of the present invention; This substrate support pedestal comprises transfer system; This transfer system is suitable for transmitting these one or more substrates along a transfer path; This charged particle beam PVD device comprises elongated pore; This elongated pore has two ends respect to one another; And this masking device comprises at least one assembly; This assembly is selected from by being positioned at the group that first shield of locating one of end and second shield that is positioned at place, the other end are formed; And wherein this charged particle beam PVD device is arranged in this coating chamber, so that this elongated pore is positioned to across this transfer path.
In an embodiment (can combine with other any embodiment of the present invention), this method also comprises: through substrate being fed to be arranged in the coating chamber and with substrate substrate is set on the substrate support pedestal; Executing from charged particle beam PVD device when joining coating material, transfer system is along the continuous or discontinuous transmission substrate of delivery direction; And from coating chamber removal substrate.
In an embodiment (can combine) of this method with other any embodiment of the present invention; This transfer path has two borders respect to one another; And this charged particle beam PVD device is arranged in this coating chamber; So that this first shield is towards a border of this transfer path, and this second shield is towards another border of this transfer path.
Above-mentioned explanation uses the example that comprises most preferred embodiment to disclose the present invention, so that these those skilled in the art are able to carry out and use the present invention.Because the present invention illustrates that with various specific embodiments those skilled in the art can understand in the spirit of claim and scope can carry out many modifications back enforcement to the present invention; Particularly, the characteristic of not repelling each other in the foregoing description can be bonded to each other.Claim of the present invention is defined by claim, and can comprise those skilled in the art other example that can know by inference according to this, these examples still fall within the scope of claim of the present invention.
Although above-mentioned explanation to each embodiment of the present invention, can push away other and further embodiment of the present invention and do not deviate from base region of the present invention, scope of the present invention is defined by accompanying claims.
Claims (13)
1. charged particle beam PVD device comprises:
At the inner coating material target (262) of housing (261),
Be arranged on the pore (263) in this housing, and
Shading unit (266,268 with the adjacent setting of this pore; 2680), this shading unit is in floating potential,
Wherein this shading unit is mounted to this housing via insulated connectors (270), and this insulated connectors (270) has from masking structure.
2. charged particle beam PVD device as claimed in claim 1 is characterized in that, this shading unit is arranged in the periphery of this pore and/or extends to this pore.
3. charged particle beam PVD device as claimed in claim 1 or 2 is characterized in that this shading unit is positioned between this coating material target and this pore, or wherein this pore between this shading unit and this coating material target.
4. like the described charged particle beam PVD of aforementioned arbitrary claim device, it is characterized in that this shading unit is mounted to this housing via insulated connectors (270).
5. like the described charged particle beam PVD of aforementioned arbitrary claim device; It is characterized in that; This pore has two end elongated shapes respect to one another, and this shading unit comprises second shield of being located at first shield of locating one of end and/or being located at place, the other end.
6. as the described charged particle beam PVD of aforementioned arbitrary claim device, it is characterized in that this shading unit in the scope of 40mm to 70mm, and/or is 55mm at least from the distance of this target.
7. like the described charged particle beam PVD of aforementioned arbitrary claim device; It is characterized in that this charged particle beam PVD device is at least one assembly that is selected from electron beam PVD device, ionic fluid PVD device, sputtering apparatus, plasma sputtering device, charged particle beam sputtering apparatus, electron beam sputtering apparatus and ionic fluid sputtering apparatus.
8. shading unit that is used for charged particle beam PVD device, this charged particle beam PVD device comprises: at the inner coating material target (262) of housing (261), and be arranged on the pore (263) in this housing, this shading unit (266,268; 2680) be suitable for being arranged to adjacent and be suitable for being located at floating potential with this pore,
Wherein this shading unit comprises the insulated connectors (270) that has from masking structure, and this insulated connectors is suitable for this shading unit is mounted to this charged particle beam PVD device (26; 260).
9. coating chamber that is used for coated substrate comprises:
Substrate support pedestal (30; 300); And
According to each described charged particle beam PVD device (26 in the claim 1 to 7; 260).
10. coating chamber as claimed in claim 9 is characterized in that,
This substrate support pedestal comprises transfer system (30), and this transfer system (30) is suitable for transmitting these one or more substrates along transfer path (60),
This charged particle beam PVD device comprises elongated pore, and this elongated pore has two ends respect to one another, and this shading unit comprises first shield (266) that is arranged on one of end and/or be located at second shield (268) at the other end place, and wherein
This charged particle beam PVD device is arranged in this coating chamber, so that this elongated pore is positioned to across this transfer path.
11. coating chamber as claimed in claim 10 is characterized in that,
This transfer path (60) has two borders respect to one another, and this charged particle beam PVD device is arranged in this coating chamber, so that this first shield is towards a border of this transfer path, and this second shield is towards another border of this transfer path.
12. the method for the one or more substrates of coating in the coating chamber comprises:
Substrate support pedestal (30 at this coating chamber; Substrate (100) is set 300), and this coating chamber has like each described charged particle beam PVD device (26 in the claim 1 to 7; 260), and
From this charged particle beam PVD device (26; 260) this substrate (100) is executed joined coating material.
13. method as claimed in claim 12 is characterized in that, this coating chamber is like each described coating chamber in the claim 9 to 11.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09150786.3 | 2009-01-16 | ||
| US12/355,146 US20100181187A1 (en) | 2009-01-16 | 2009-01-16 | Charged particle beam pvd device, shielding device, coating chamber for coating substrates, and method of coating |
| US12/355,146 | 2009-01-16 | ||
| EP09150786A EP2209132A1 (en) | 2009-01-16 | 2009-01-16 | Charged particle beam PVD device, shielding device, coating chamber for coating substrates, and method of coating |
| PCT/IB2010/000031 WO2010082106A1 (en) | 2009-01-16 | 2010-01-11 | Charged particle beam pvd device, shielding device, coating chamber for coating substrates, and method of coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102356178A true CN102356178A (en) | 2012-02-15 |
Family
ID=42339485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080012706XA Pending CN102356178A (en) | 2009-01-16 | 2010-01-11 | Charged particle beam pvd device, shielding device, coating chamber for coating substrates, and method of coating |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2012515269A (en) |
| KR (1) | KR20110106930A (en) |
| CN (1) | CN102356178A (en) |
| SG (1) | SG172389A1 (en) |
| TW (1) | TW201033387A (en) |
| WO (1) | WO2010082106A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104099575A (en) * | 2014-07-11 | 2014-10-15 | 京东方科技集团股份有限公司 | Magnetron sputtering device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9605340B2 (en) * | 2012-07-05 | 2017-03-28 | Intevac, Inc. | Method to produce highly transparent hydrogenated carbon protective coating for transparent substrates |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5518593A (en) * | 1994-04-29 | 1996-05-21 | Applied Komatsu Technology, Inc. | Shield configuration for vacuum chamber |
| GB2350374B (en) * | 1999-05-11 | 2003-09-24 | Trikon Holdings Ltd | Deposition apparatus |
| US6149784A (en) * | 1999-10-22 | 2000-11-21 | Applied Materials, Inc. | Sputtering chamber shield promoting reliable plasma ignition |
| US7718045B2 (en) * | 2006-06-27 | 2010-05-18 | Applied Materials, Inc. | Ground shield with reentrant feature |
-
2010
- 2010-01-11 JP JP2011545810A patent/JP2012515269A/en not_active Withdrawn
- 2010-01-11 SG SG2011046778A patent/SG172389A1/en unknown
- 2010-01-11 WO PCT/IB2010/000031 patent/WO2010082106A1/en active Application Filing
- 2010-01-11 CN CN201080012706XA patent/CN102356178A/en active Pending
- 2010-01-11 KR KR1020117019025A patent/KR20110106930A/en not_active Application Discontinuation
- 2010-01-15 TW TW099101098A patent/TW201033387A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104099575A (en) * | 2014-07-11 | 2014-10-15 | 京东方科技集团股份有限公司 | Magnetron sputtering device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201033387A (en) | 2010-09-16 |
| JP2012515269A (en) | 2012-07-05 |
| KR20110106930A (en) | 2011-09-29 |
| SG172389A1 (en) | 2011-08-29 |
| WO2010082106A1 (en) | 2010-07-22 |
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Application publication date: 20120215 |