201031283 六、發明說明： 【發明所屬之技術領域】 之製造方法以及 本發明係關於一種介電窗、介 使用§亥介電窗的電漿處理裳置。_ 【先前技術】201031283 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a dielectric window, which is treated by a plasma treatment using a dielectric window. _ [Prior technology]
電聚處理係廣泛地應用於積體電路 板、太陽能電池等多種半導 電路基 利用於半導體製造過程。電聚處理可 箱。加β & 往W Sl等薄膜之堆積或餘刻製 件，二二了開發、製造出更高性能且更高機能之元 处’ m!有對應之例如超微細加讀術等。因此， 月匕於低壓力高真空狀離φ德a , > 計-㈣妝 “中穩疋地產生高密度電漿（低氣 W岔度電漿）的微波電漿處理裝置便受到世人注目。 微波電漿處理裝置係藉由微波能量來使氣體電離 而產生電漿的電魏理褒置。微波係通過導波管而從天 線之槽孔板處被供給。接著，穿透設置於處理容器 理室）上部開Π的介電窗（頂板）而放射至電聚處 理至内。该介電窗係由能讓微波穿透的介電材料所形成 的。 、微波電漿處理裝置於電漿處理時，介電窗會變成高 /现而谷易使電漿產生之狀態變得不穩定，故必須進行介 電窗的溫度控制。 恭*因此，已^知一種於廣域之電漿產生條件中，能在介 电由内形成最合適之微波共振區域以穩定地產生電漿 3 201031283 的電聚f縣置（料補文獻1)。 分:述ί術’於介電窗下方面言免置有環狀之突出條 、、’文，電_杈方向的厚度係呈傾斜狀地連續變化。藉 *月b讓1個〃電窗兼用為具多樣化厚度之多種類介電 _故於任何電激產生條件中，亦可讓介電窗内的微波 進行共振。 f利文獻1:日本特開第2005- 100931號公報 前述技術係鑽研於介電窗之形狀以於多樣化電漿 產生條件中調整該介電窗内微波的傳播狀態。但是，該❹ 技術並未特別考量到有關於微波被導入介電窗以前之 5亥微波傳辩狀態的控制。 尸，波電衆處理裝置中，當電漿處理容器内形成藏壓 =氣氛後’有時會因電漿處理容器内外部的壓力差而使 ;丨電固產生變形。因此，於天線與介電窗之間便產生一 間隙，會使得朝向電漿處理容器内的微波之導入產生偏 差。又’該間隙會讓介電窗附近之熱傳導率（冷卻效率） 產生變化’使得介電窗的溫度變得不均勻，亦有可能會❹ 造成介電窗内電磁場分佈的變化。然後，結果係會使得 電漿密度分佈（電漿產生之狀態）變得不穩定。 微波係從導波管沿著天線之槽孔板、位於天線上方 的冷部套等傳送路徑而傳播。此時，當傳送路徑間（慢 波板與槽孔板、天線與冷卻套等）的間隙變大時，可能 會因於天線内之微波之傳播使得傳送路徑間產生電位 差而弓I發異常放電。 201031283 差而引發異常放電。 又，慢波板及介電窗皆由介電材料所形成而槽孔板 則由金屬所形成的，故隨著溫度的上昇該各組件間會產 生熱膨>張的差異。例如，當慢波板及介電窗係由氧化铭 (Al2〇3)所形成而槽孔板係由銅（Cu)所形成的情況， 該槽孔板會熱膨漲得比介電窗或慢波板更大。 於微波電漿處理裝置中，該槽孔板係被挾於設置在 ❾ 頂部之介電窗與慢波板之間的狀態。且該槽孔板係藉由 於其外緣部之螺絲而固定至冷卻套上，故紐於徑方向 進行熱膨漲。因此，即使該槽孔板於電漿處理前係呈平 面狀，但會隨著電漿處理而使其溫度上昇時，會於慢波 板與介電窗之間推擠擴張而變形。結果會使槽孔板的位 置產生變動，而使微波之傳播變得不均勻。又，當槽孔 板與陵波板、槽孔板與介電窗以及冷卻套與慢波板之間 等各自產生有空隙，且天線中之微波於傳播時，有時會 ❿ 在電場強度較高的部位引發異常放電。 再者β亥專二隙會讓各組件間於熱傳導時的接觸熱 阻變得不均^使熱傳導度產生偏差，故難以藉由冷卻 套來對各組件之溫度進行適當的控制。 【發明内容】 _有鑑於前述狀況，本發明之目的係提供一種藉由提 =天線與介電窗之密合性來防止異常放電，且可使介電 崗内之電磁場分佈（意即電漿密度分佈）穩定的介電 5 201031283 窗、該介電窗之製造方法及使用該介電窗之電漿處理裝 置。 為了達成前述目的，本發明第1觀點之介電窗之製 造方法，係用於一利用微波在電漿處理容器内產生電漿 並對被處理對象物進行電漿處理之電漿處理裝置，並可 使該電漿處理容器之内部密封而成為可產生電漿之真 空狀態，同時用以傳播該微波而使其穿透至該電漿處理 容器内部之介電窗之製造方法，其特徵在於具備有：將 介電體板安裝在一於内部可形成真空狀態之夾治具上 的安裝步驟；藉由真空減壓機構，使該夾治具之内部排 氣、減壓，以形成與該電漿處理容器相同之真空狀態， 並將該介電體板作為邊界以產生壓力差，使得該介電體 板係朝該夾治具内部變形成凸狀的壓差步驟；以及維持 於以該介電體板作為邊界之壓力差的狀態下，使該介電 體板之位於該夾治具外側之一面變為平坦之單面平坦 化步驟。 本發明第2觀點之介電窗係由本發明第1觀點之介 電窗之製造方法所製得之介電窗，其特徵在於：當該介 電窗係被安裝在該電漿處理裝置且當該介電窗内外無 壓力差時，其位於該電漿處理容器外側之一面係為朝外 側凸出之曲面；且當該電漿處理容器内部成為可產生電 漿之真空狀態時，該介電窗係朝該電漿處理容器内部撓 曲呈凸狀，同時其位於該電漿處理容器外側之一面係呈 平坦狀。 201031283 對稱=地，該介電窗係為於中央部凸起為最高點1 ，發明第3觀點之電漿處理裝置，其係利用微 聚=:處二生置電裝並對被處理對象物進行-電 〈电料理裝置，其特徵在於具備有 ==傳送該微坡的導波管;將來自該微波芯 以值：S所傳送之該微波放射而出的天線;以及ί ^播自該天線耻料的賴波，並使 ，處理容器内部的介電窗；且具備有 = 作為該介電窗。 "冤_來 ” it地位於違電聚處理容器外側之該介電〜 面側，該天線係以重疊之方式設置。 〜 細社^佳_ A天線係具備有—槽孔板、—與該槽孔板 _二置的慢波板，該槽孔板係藉由一支撐組件所支 芽，並可於面方向產生變形。 〇 =佳地，該天線係具備有一槽孔板、一與該槽孔板 於=堍置的慢波板，該槽孔板中，複數對之槽孔係各自 晉複數同心圓之各同心圓上以約略相等之角度間隔設 而形成，且每一對槽孔亦可以互相垂直之方式形成。 較佳地，用以冷卻該天線的冷卻機構係以與該天線 〜面接觸且重疊之方式設置。 入I車又佺地，該槽孔板係由金屬所組成、該慢波板係由 w電材料所組成的。 依本發明之介電窗、該介電窗之製造方法以及使用 7 201031283 該介電窗的電漿處理裝置，可提高天線命 界介雷窗之穷人 性以防止異常放電，藉以穩定電漿密声 σ 分佈。 【實施方式】 以下’參考圖式來詳細说明本發明支, 外，圖式中係針對相同或相對應部份賭 施开成' 另 號。 W予相同的元件符 © 本實施形態係有關於本發明第1勸 製造方法、本發明第2觀點之介電窗以及窗之 點之微波電漿處理裝置（以下，簡稱「"月苐3觀 本實施形態的介電窗之單面侧係具有凸=理I置」）。 :特定大小之曲率半徑且形成高精度之細對曲： 者，戎曲面之表面係被研磨成光滑表面。 狀再 圖认縣發明實施形態之介電窗 錄介電窗侧聽树㈣2觀狀介電冑視圖。又， 讀介電窗係對應於由本發明帛i觀點之 方法所製成的介電窗3。 1電_之製造 ❹ 圖1B係將圖1A所示介電窗3與習 窗3〇 (如虛線所示）重疊進行比較的侧視圖之以 以下=明中，當介電窗3設置於電 時，將該介電窗3之位於處理室（㈣處 = 侧的-面指定為上方面3,。又，將該介電窗3:= 里室2_的面指定為下方面％。如後述般 = 係能使其内部形成密閉的有底四邊形筒狀物。 8 201031283 如圖1A所示，其外部未施加 上方面3f_成朝上方凸出的有負^^電窗3 成平垣狀。圖1B中習知技術之介面電窗而^ 不。如此可知，與習知技術介 ’、虛線表 3係形成中央部最凸出的姉_狀。相同，該介電窗 圖2係圖1A所示之介電窗 介電體板31之剖面圖。 未形成曲面前的讓Electropolymerization is widely used in a variety of semiconductor circuits such as integrated circuit boards and solar cells to utilize semiconductor manufacturing processes. The electropolymerization process can be carried out. Adding β & to W Sl and other film stacking or engraving parts, and developing and manufacturing higher performance and higher performance elements, such as ultra-fine reading. Therefore, the moon's microwave plasma processing device, which is low-pressure and high-vacuum-like, and has a high-density plasma (low-gas W-twist plasma), has attracted worldwide attention. The microwave plasma processing device is an electrical device that generates plasma by ionizing the gas by microwave energy. The microwave system is supplied from the slot plate of the antenna through the waveguide. Then, the penetration is set in the processing. The dielectric window (top plate) of the upper chamber of the container is radiated to the electropolymerization process. The dielectric window is formed by a dielectric material that allows microwaves to penetrate. The microwave plasma processing device is electrically When the slurry is processed, the dielectric window will become high/now and the valley will make the state of the plasma unstable, so the temperature control of the dielectric window must be performed. Christine* Therefore, a wide-area plasma has been known. In the generation condition, the most suitable microwave resonance region can be formed in the dielectric to stably generate the plasma 3 201031283 (Material Supplement 1). It is said that there is a ring-shaped protruding strip, and the thickness of the 'text, electric_杈 direction is It changes continuously in a slanting manner. By using *month b, one 〃 electric window can be used as a plurality of types of dielectrics with various thicknesses. Therefore, in any electric excitation condition, the microwave in the dielectric window can also be resonated. The prior art is studied in the shape of a dielectric window to adjust the propagation state of microwaves in the dielectric window in a variety of plasma generation conditions. However, the technique does not Special consideration is given to the control of the state of microwave propagation before the microwave is introduced into the dielectric window. In the corpse, the wave treatment device, when the built-in pressure in the plasma processing container = atmosphere, sometimes due to plasma Treating the pressure difference between the inside and the outside of the container; the electric force is deformed. Therefore, a gap is generated between the antenna and the dielectric window, which causes a deviation toward the introduction of the microwave in the plasma processing container. Will cause the thermal conductivity (cooling efficiency) near the dielectric window to change, so that the temperature of the dielectric window becomes uneven, and it may cause a change in the electromagnetic field distribution in the dielectric window. Then, the result is plasma. density The distribution (state of plasma generation) becomes unstable. The microwave system propagates from the waveguide along the transmission path of the slot plate of the antenna and the cold section above the antenna. At this time, when the transmission path is slow (slow When the gap between the wave plate and the slot plate, the antenna, the cooling jacket, etc. becomes large, the potential difference between the transmission paths may occur due to the propagation of the microwaves in the antenna, and the abnormal discharge occurs. 201031283 Poorly caused abnormal discharge. The slow wave plate and the dielectric window are both formed of a dielectric material and the slot plate is formed of a metal, so that as the temperature rises, a difference in thermal expansion is generated between the components. For example, when the temperature is slow The wave plate and the dielectric window are formed by Oxide (Al2〇3) and the slot plate is formed of copper (Cu). The slot plate will be thermally expanded more than the dielectric window or the slow wave plate. In the microwave plasma processing apparatus, the slot plate is tied to the state between the dielectric window and the slow wave plate disposed at the top of the crucible. Further, the slot plate is fixed to the cooling jacket by the screw at the outer edge portion thereof, so that the spring is thermally expanded in the radial direction. Therefore, even if the slot plate is flat before the plasma treatment, it will be expanded and deformed between the slow wave plate and the dielectric window when the temperature rises as the plasma is processed. As a result, the position of the slot plate is changed, and the propagation of the microwave becomes uneven. Moreover, when the slot plate and the mesh plate, the slot plate and the dielectric window, and between the cooling jacket and the slow wave plate each have a gap, and the microwave in the antenna propagates, sometimes the electric field strength is higher. The high part causes an abnormal discharge. Furthermore, the β-Self-gap will make the contact resistance between the components uneven during heat conduction, which will cause a variation in the thermal conductivity, so that it is difficult to appropriately control the temperature of each component by the cooling jacket. SUMMARY OF THE INVENTION In view of the foregoing, it is an object of the present invention to provide an anti-abnormal discharge by improving the adhesion between an antenna and a dielectric window, and to distribute electromagnetic fields in a dielectric post (ie, plasma) Density distribution) Stable dielectric 5 201031283 Window, method of manufacturing the dielectric window, and plasma processing apparatus using the dielectric window. In order to achieve the above object, a method of manufacturing a dielectric window according to a first aspect of the present invention is a plasma processing apparatus for generating a plasma in a plasma processing container by microwave and plasma-treating the object to be processed, and A method of manufacturing a dielectric window in which a plasma processing container can be sealed to form a vacuum state in which plasma can be generated, and a microwave is transmitted to penetrate the inside of the plasma processing container, and is characterized by There is: a mounting step of mounting a dielectric plate on a fixture capable of forming a vacuum inside; and a vacuum decompression mechanism for exhausting and decompressing the inside of the fixture to form the electricity The slurry processing container is in the same vacuum state, and the dielectric body plate is used as a boundary to generate a pressure difference, so that the dielectric body plate is deformed into a convex pressure difference step toward the inside of the fixture; In the state where the electric potential plate is a pressure difference of the boundary, the one surface of the dielectric plate located on the outer side of the jig is flattened to be a flat single-face flattening step. A dielectric window according to a second aspect of the present invention, characterized in that the dielectric window is mounted on the plasma processing apparatus and When there is no pressure difference between the inside and the outside of the dielectric window, a surface on the outer side of the plasma processing container is a curved surface protruding outward; and when the inside of the plasma processing container becomes a vacuum state capable of generating plasma, the dielectric The window system is convexly convex toward the inside of the plasma processing container, and at the same time, one side of the plasma processing container is flat. 201031283 symmetry=ground, the dielectric window is the highest point 1 in the central portion, and the plasma processing device according to the third aspect of the invention uses the micro-convergence=: the second-generation electric device and the object to be processed Conducting an electro-electric cooking device characterized by having a waveguide having == transmitting the micro-slope; an antenna radiating the microwave from the microwave core with a value of S; and transmitting from the microwave The antenna of the antenna shame, and the dielectric window inside the container is processed; and = is provided as the dielectric window. "冤_来” It is located on the dielectric side of the outside of the processing container, and the antenna is arranged in an overlapping manner. ~ 细社^佳_ A antenna system has a slot plate, - and The slot plate _ two slow wave plates, the slot plate is bud by a support component, and can be deformed in the plane direction. 〇= preferably, the antenna system has a slot plate, a The slot plate is formed in a slow wave plate, wherein the plurality of slots are formed at equal angular intervals on each concentric circle of the concentric circle, and each pair of slots is formed. Preferably, the holes are formed perpendicular to each other. Preferably, the cooling mechanism for cooling the antenna is disposed in contact with and overlapping with the antenna-face. The I-car is smashed, and the slot plate is made of metal. The composition, the slow wave plate is composed of a w electrical material. The dielectric window according to the present invention, the manufacturing method of the dielectric window, and the plasma processing device using the dielectric window of 7 201031283 can improve the antenna interface The poorness of the thunder window prevents abnormal discharge, thereby stabilizing the dense σ distribution of the plasma [Embodiment] Hereinafter, the present invention is described in detail with reference to the drawings, and in the drawings, the same or corresponding parts are stipulated as "another number." W is the same component. This embodiment relates to the present invention. The microwave plasma processing apparatus which is the first method of the manufacturing method and the dielectric window and the window of the second aspect of the present invention (hereinafter, simply referred to as "the" side of the dielectric window of the embodiment of the present invention has a convex side. =理I set"). : A radius of curvature of a specific size and a fine-grained pair of high-precision curves: The surface of the curved surface is ground to a smooth surface. The shape of the dielectric window of the invention invented in the county is recorded on the side of the dielectric window (4) 2 view of the dielectric view. Further, the read dielectric window corresponds to the dielectric window 3 made by the method of the present invention. Fig. 1B is a side view in which the dielectric window 3 shown in Fig. 1A is overlapped with the window 3 (shown by a broken line), and the following is a lower side, when the dielectric window 3 is set to electricity. When the dielectric window 3 is located in the processing chamber ((4) = side - the surface is designated as the upper aspect 3, and the surface of the dielectric window 3: = the inner chamber 2_ is designated as the lower aspect %. As will be described later, it is possible to form a closed bottomed quadrangular tubular body. 8 201031283 As shown in FIG. 1A, the external surface 3f_ is not applied to the upper side, and the negatively-charged electric window 3 is formed into a flat shape. In Fig. 1B, the interface of the prior art is not the same as that of the prior art, and it can be seen that the structure of the prior art is the same as that of the dotted line 3, and the most prominent 姊_ shape of the central portion is formed. A cross-sectional view of the dielectric window dielectric plate 31 shown in Fig. 1A.
以下係說明於介電窗3 3形成曲面的方法。 製k方法中，使該介電窗 首先，準備一由上 成特定厚叙介電㈣所；自料幾乎平面狀且形 如圖2所示，兮^成的介電體板& 理裳置1之介電窗體板31僅需具有作為電漿處 "电囪3的必要， 體板31與習知技術之介 j尺寸即可。又，該介電 小，而為了進行研磨 匈30幾乎為同形狀且相同大 置有至少〇.lmm厚度留上方面3f側之表層部份設 特殊限制，例如，可由=邊。卩知。該介電體板31並無 成、抑或由圓柱形；雷L電材料以壓縮成型的方法製 成。 料切割分離成薄板的方法製 圖3A及圖3B係错日a | 之製造方㈣概略剖面實施形態之介電窗3 應於本發明第丨翻軒+ a 5亥介電窗3之製造方法係對 如FI λ ;丨電窗之製造方法。 如圖3Α及圖犯所 衣以方忐 擬成電漿處理萝#， 、，本實施形態中，使用了模 衷置1之•室2的夾、冶具2G來使介電 9 201031283 窗3形成該曲面。該夾治具20係具備夾治具本體21、 0型環22以及作為真空減壓機構的真空泵23。該夾治 具本體21係於上部具有矩形開口的有底四邊形筒狀之 筐體，當以介電窗3密封該上部開口後，便可密閉夾治 具本體21内部而使其内部形成真空狀態。Ο型環22係 與夾治具本體21之上部開口幾乎為相同形狀且相同大 小，並設置於沿夾治具本體21上部開口所形成之矩形 支持框處。夾治具本體21之構造與藉由矩形支持框來 支撐介電窗3的處理室2之構造相同。 其次，如圖3A所示，將介電體板31設置於沿夾治 具本體21上部開口所形成之矩形支持框處，且其間係 插入有0型環22 (設置步驟）。 此時，Ο型環22之中心與介電體板31之中心係形 成一致。於此狀態下，使用真空泵23對夾治具本體21 之内部進行排氣、減壓。藉此，可使得該夾治具本體 21之内部被減壓至與電漿處理裝置1之實際電漿產生 條件的相同壓力值。 其次，以真空泵23對夾治具本體21 (夾治具20) 之内部進行排氣、減壓，以形成能於電漿處理裝置1内 實際產生電漿的真空狀態。接著，使介電窗3作為邊界 而產生壓力差。如此一來，如圖3A所示，該介電體板 31下方面被Ο型環22所包圍的區域處係因夾治具20 内外的壓力差，而朝夾治具本體21内部（下方）凸出 而逐漸地撓曲（壓差步驟）。 201031283 接著，當夾治具本體21内部的壓力係成為電漿處 理裝置1之實際電漿產生條件的相同壓力值，例如 10[mPa]〜數10[Pa]左右時，停止該真空泵23之減壓操 作並維持該介電體板31下方面係朝下方凸出的變形狀 態。 其次，如圖3B所示，利用研磨用夾治具來對介電 體板31位於夾治具本體21外侧的上方面（單面）進行 研磨，以形成平坦且均勻之高度（單面平坦化步驟）。 此處，該介電體板31上方面的中央部幾乎未受到 研磨，又，越靠近介電體板31上方面的周緣區域則其 研磨量越多。此時，應使得該介電體板31位於夾治具 本體21内側的下方面之撓度不會產生變化。 如前述般，待介電體板31上方面之研磨完成後， 即從該介電體板31製成了介電窗3。其次，使夾治具 本體21内部開放至大氣壓力，再將介電窗3從夾治具 20上取下。當夾治具20内外的壓力差解除後，該介電 窗3之撓曲亦解除。接著，如圖1A所示，介電窗3之 下方面3b係恢復平坦狀。另一方面，如圖1B所示，介 電窗3之上方面3f則形成了朝上方凸出且中央部最高 的曲面。此乃因為於該介電窗3整體朝下方撓曲之狀態 下，其中央部幾乎未被削減，但越靠近周緣區域則研磨 量越多。 依本實施形態之介電窗3之製造方法，該介電體板 31位於電漿處理裝置1之處理室2外側的上方面中央 11 201031283 部幾乎未受研磨，且越靠近外緣區域則其研磨量越多。 因此該介電窗3的上方面3f係形成朝上方凸出且圓滑 之曲面。然後，由於該介電窗3實際使用於電漿處理裝 置1時，該處理室2内部係真空狀態，故介電窗3會發 生撓曲。依本實施形態之介電窗3之製造方法，在藉由 模擬為處理室2之夾治具本體21内外的壓力差而產生 撓曲的狀態下，將位於處理室2外側的上方面3f研磨 成平坦狀。因此，如圖1A所示，當上方面3f與下方面 3b所承受之壓力無差異的狀態下，該介電窗3的上方 面3f係形成朝上方凸出的曲面。但是，如圖3B所示， 實際使用於電漿處理裝置1時，該上方面3f係平坦狀。 如圖1A所示，本實施形態之介電窗3為軸對稱之 形狀，故將其設置於電漿處理裝置1以進行電漿處理 時，能使得介電窗3位於處理室2外側的上方面3f (單 面）係穩定地變為平坦狀。 圖4係本發明實施形態之電漿處理裝置1的整體剖 面圖，該電漿處理裝置1對應於本發明第3觀點之電漿 處理裝置。 如圖4所示，本發明實施形態之電漿處理裝置1具 備：有底四邊形筒狀之處理室2 ;介電窗（頂板）3 ; 圓盤狀天線4 ;導波管5 ;微波源6 ;作為冷卻機構之 冷卻套7 ;基板保持台8 ;真空泵9 ;高頻電源10 ;氣 體通道11 ;溫度感測器12以及支撐組件13。處理室2 係形成可密閉之結構以於其内部產生電漿。天線4具 12 201031283 備：由金屬（屏蔽組件）所組成的槽孔板4a;以及鄰接 設置於該槽孔板4a上方，由介電體所組成的慢波板 4b。導波管5係所謂之同軸導波管，且具備：内侧導體 5b ;以及該内側導體5b外緣處係設有圓筒形之外側導 體5a以形成可讓微波通過之圓筒狀間隙。 支撐組件13與處理室2之上部開口（介電窗3周 緣部）幾乎為相同形狀且相同之大小，並設置於沿該處 理室2上部開口所形成之矩形支持框處。接著，介電窗 3係透過支撐組件13而設置於該矩形支持框處。 圖5係本替明實施形態之槽孔板乜之一範 視圖。 如圖5所示，槽孔板4a係鄰接設置於慢波板仙的 下方’並形成有複數個貫通之槽孔41、42。藉此，槽 孔板4a係位於慢波板4b的下方❶因此’微波係以從^ 波管5導入之位置處為中心而朝慢波板4b之面 播開來。 寻 洋細說明’如圖5所示，各槽孔41、42係形成於 複數個同心圓之各同心圓上且以約略相等之角^間隔 設置。各槽孔41、42係相互垂直而形成的。接著，微 波係以從導波管5導入之位置處為中心，並朝槽孔板 4a徑方向傳播，再透過各槽孔41、42而朝下方^射而 出。接著，該微波係於頂板3内部不斷地反射而相互干 涉並增強以形成駐波。接著，於頂板3正下方區域内， 朝向垂直各槽孔41、42之長邊的方向而形成電漿。 13 201031283 回:J圖4,藉由介電窗3來封閉該電漿處理裝置1 之處理室2的上部開口。介電窗3之上方面对係形成 朝處理室2外側（上方）凸出的曲面。又天線#係重 疊設置於該介電窗3上方（單面側）。 導波管5係連接至天線4之中央部處。詳細說明， 内側導體5b之下端部係抵接於槽孔板如。慢波板4b 係位於冷卻套7與槽孔板4a之間，使得自導波管5導 入之微波的波長受壓縮而朝短波長側移動。該慢波板The following describes a method of forming a curved surface on the dielectric window 33. In the method of making k, first, the dielectric window is prepared by a specific thick dielectric (4); the self-material is almost planar and the shape is as shown in FIG. 2, and the dielectric plate & The dielectric form plate 31 of the first type only needs to have the same as the plasma portion, and the body plate 31 and the size of the prior art can be used. Further, the dielectric is small, and in order to perform the grinding, the Hungarian 30 has almost the same shape and the same size has at least 〇.lmm thickness, and the surface portion of the 3f side is particularly limited, for example, by = edge. I know. The dielectric plate 31 is not formed or formed of a cylindrical shape; the Ray-L electrical material is formed by compression molding. Method for cutting and separating into thin sheets 3A and 3B are manufactured by the manufacturer (4) schematic cross-section of the dielectric window 3 according to the present invention, the manufacturing method of the third floor of the present invention For the manufacturing method such as FI λ; 丨 electric window. As shown in Fig. 3 and Fig. 3, the sputum is made into a plasma treatment, and in the present embodiment, the clamp of the chamber 2 and the tool 2G are used to make the dielectric 9 201031283 window 3 form. The surface. The jig 20 includes a jig body 21, an O-ring 22, and a vacuum pump 23 as a vacuum pressure reducing mechanism. The fixture body 21 is a bottomed quadrangular cylindrical casing having a rectangular opening at the upper portion. When the upper opening is sealed by the dielectric window 3, the inside of the fixture body 21 can be sealed to form a vacuum inside. . The Ο-shaped ring 22 is almost the same shape and the same size as the upper opening of the jig body 21, and is disposed at a rectangular support frame formed along the upper opening of the jig body 21. The configuration of the jig body 21 is the same as that of the process chamber 2 that supports the dielectric window 3 by a rectangular support frame. Next, as shown in Fig. 3A, the dielectric plate 31 is placed at a rectangular support frame formed along the upper opening of the holder body 21 with an O-ring 22 interposed therebetween (setting step). At this time, the center of the Ο-shaped ring 22 is formed in conformity with the center of the dielectric plate 31. In this state, the inside of the jig body 21 is evacuated and decompressed using the vacuum pump 23. Thereby, the inside of the jig body 21 can be depressurized to the same pressure value as the actual plasma generating condition of the plasma processing apparatus 1. Next, the inside of the jig body 21 (the jig 20) is evacuated and depressurized by the vacuum pump 23 to form a vacuum state in which plasma can be actually generated in the plasma processing apparatus 1. Next, the dielectric window 3 is used as a boundary to generate a pressure difference. As a result, as shown in FIG. 3A, the area surrounded by the Ο-shaped ring 22 in the lower portion of the dielectric body plate 31 faces the inside of the fixture body 21 (below) due to the pressure difference between the inside and the outside of the tongs 20. Convex and gradually flex (pressure difference step). 201031283 Next, when the pressure inside the fixture body 21 becomes the same pressure value of the actual plasma generation condition of the plasma processing apparatus 1, for example, about 10 [mPa] to several 10 [Pa], the reduction of the vacuum pump 23 is stopped. The pressing operation maintains a deformed state in which the lower surface of the dielectric body plate 31 is convex downward. Next, as shown in FIG. 3B, the upper surface (single side) of the dielectric plate 31 outside the jig body 21 is polished by the jig for polishing to form a flat and uniform height (single-sided flattening) step). Here, the central portion of the upper surface of the dielectric body plate 31 is hardly polished, and the closer to the peripheral portion of the dielectric body plate 31, the larger the amount of polishing. At this time, the deflection of the lower side of the dielectric body plate 31 on the inner side of the jig body 21 should be made unchanged. As described above, after the grinding of the upper surface of the dielectric plate 31 is completed, the dielectric window 3 is formed from the dielectric plate 31. Next, the inside of the fixture body 21 is opened to atmospheric pressure, and the dielectric window 3 is removed from the fixture 20. When the pressure difference between the inside and the outside of the jig 20 is released, the deflection of the dielectric window 3 is also released. Next, as shown in Fig. 1A, the lower side 3b of the dielectric window 3 is restored to a flat shape. On the other hand, as shown in Fig. 1B, the upper surface 3f of the dielectric window 3 forms a curved surface which is convex upward and has the highest central portion. This is because the center portion is hardly cut in a state where the dielectric window 3 is entirely deflected downward, but the amount of polishing increases as it approaches the peripheral region. According to the manufacturing method of the dielectric window 3 of the present embodiment, the dielectric body plate 31 is located on the outer side of the processing chamber 2 of the plasma processing apparatus 1 and the central portion 11 201031283 is hardly ground, and the closer to the outer edge region, the The more the amount of grinding. Therefore, the upper surface 3f of the dielectric window 3 is formed into a curved surface which is convex upward and smooth. Then, since the dielectric window 3 is actually used in the plasma processing apparatus 1, the inside of the processing chamber 2 is in a vacuum state, so that the dielectric window 3 is deflected. According to the manufacturing method of the dielectric window 3 of the present embodiment, the upper surface 3f located outside the processing chamber 2 is ground in a state where the deflection is caused by the pressure difference between the inside and the outside of the holder body 21 of the processing chamber 2 It is flat. Therefore, as shown in Fig. 1A, in a state where the upper surface 3f and the pressure applied to the lower surface 3b are not different, the upper surface 3f of the dielectric window 3 forms a curved surface which protrudes upward. However, as shown in FIG. 3B, when actually used in the plasma processing apparatus 1, the upper surface 3f is flat. As shown in FIG. 1A, the dielectric window 3 of the present embodiment has an axisymmetric shape. Therefore, when it is placed in the plasma processing apparatus 1 for plasma processing, the dielectric window 3 can be placed on the outside of the processing chamber 2. Aspect 3f (single-sided) is stably flat. Fig. 4 is a cross-sectional view showing a whole of a plasma processing apparatus 1 according to an embodiment of the present invention, which corresponds to a plasma processing apparatus according to a third aspect of the present invention. As shown in Fig. 4, a plasma processing apparatus 1 according to an embodiment of the present invention includes: a processing chamber 2 having a bottomed quadrangular cylindrical shape; a dielectric window (top plate) 3; a disk antenna 4; a waveguide 5; a cooling jacket 7 as a cooling mechanism; a substrate holding table 8; a vacuum pump 9; a high frequency power source 10; a gas passage 11; a temperature sensor 12 and a support assembly 13. The processing chamber 2 is formed into a hermetically sealable structure to generate plasma therein. The antenna 4 has 12: 201031283: a slot plate 4a composed of a metal (shield assembly); and a slow wave plate 4b which is disposed adjacent to the slot plate 4a and is composed of a dielectric body. The waveguide 5 is a so-called coaxial waveguide, and includes an inner conductor 5b and a cylindrical outer conductor 5a at the outer edge of the inner conductor 5b to form a cylindrical gap through which microwaves can pass. The support member 13 is almost the same shape and the same size as the upper opening of the processing chamber 2 (the peripheral portion of the dielectric window 3), and is disposed at a rectangular support frame formed along the upper opening of the processing chamber 2. Next, the dielectric window 3 is disposed through the support assembly 13 at the rectangular support frame. Fig. 5 is a schematic view of a slot plate of the embodiment of the present invention. As shown in Fig. 5, the slot plate 4a is disposed adjacent to the lower portion of the slow wave plate and is formed with a plurality of through holes 41 and 42 therethrough. Thereby, the slot plate 4a is located below the slow wave plate 4b, so that the microwave system is spread toward the surface of the slow wave plate 4b centering on the position where the microwave tube 5 is introduced. As shown in Fig. 5, each of the slots 41, 42 is formed on each concentric circle of a plurality of concentric circles and disposed at approximately equal angles. Each of the slots 41, 42 is formed perpendicular to each other. Next, the microwave system is centered at the position where the waveguide 5 is introduced, propagates in the radial direction of the slot plate 4a, and passes through the slots 41 and 42 to be emitted downward. Then, the microwave system is continuously reflected inside the top plate 3 to interfere with each other and to form a standing wave. Next, in the region directly under the top plate 3, plasma is formed in a direction perpendicular to the long sides of the respective slits 41, 42. 13 201031283 Back: J FIG. 4, the upper opening of the processing chamber 2 of the plasma processing apparatus 1 is closed by a dielectric window 3. The upper surface of the dielectric window 3 forms a curved surface that protrudes toward the outside (upper side) of the processing chamber 2. Further, the antenna # is superposed on the upper side of the dielectric window 3 (single side). The waveguide 5 is connected to the central portion of the antenna 4. In detail, the lower end portion of the inner conductor 5b abuts against the slot plate. The slow wave plate 4b is located between the cooling jacket 7 and the slot plate 4a so that the wavelength of the microwave guided from the waveguide 5 is compressed to move toward the short wavelength side. Slow wave board
4b係可由例如叫或处〇3等之介電材料所形成的。 如圖4所示，本實施形態中，冷卻套7係接觸並重 疊於天線4之上方面（單面）所設置的。即使當處理室 2内部產生L擔出的熱量储積於介電窗3或天 線4處而形成高溫時’亦可藉由流通於該冷卻套7之冷 卻流道7a内的傳熱介質來吸收其熱量，以冷卻介電窗3 或天線4。 另外，如圖4所示，本實施形態中，在由金屬所形 成且最+ 容易形成高溫之天線4處設置有溫度感測器〇 12。接著，將該溫度感測器Π之測溫結果反饋給控制 電漿處理裝置1用的控制裝置（圖中未顯示）。然後， 再藉由。此制裝置來調整流通於冷卻流道7a内傳熱介 質的量並控制該傳熱介㈣溫度。藉此，能更確實地使 頂板3之溫度保持固定。 如圖4所7F，本實施形態之電装處#裝置1中，為 了對被處理基板W進行電毁處理，係以介電窗3來封 14 201031283 閉該電漿處理裝置1之處理室2的上部開口，使處理室 2内部形成密閉。其次，對處理室2内部進行排氣、減 壓以形成可產生電漿的真空狀態。接著，以該介電窗3 為邊界而形成壓力差。如此一來，便可藉由該處理室2 内外之壓力差，使得該介電窗3下方面3b係逐漸地撓 曲形成朝處理室2内部（下方）凸出的曲面。例如，該 電漿處理裝置1係處理300 mm矽晶圓用的裝置時，該 介電窗3之直徑約400 mm，該下方面3b之凸部的最大 撓曲量約0.1 mm。 圖4所示狀態中，使用真空泵9來對處理室2内部 進行排氣、減壓後，用以封閉該處理室2上部開口的介 電窗3係因處理室2内外的壓力差而承受一朝向處理室 2内部的負載。例如，當能讓處理室2内部良好地產生 電漿之狀態之電漿產生條件中的壓力值為例如10[mPa] 〜數10[Pa]左右時，因處理室2外側為大氣壓力，故該 處理室2内外係產生約105 [Pa]的壓力差。如圖4所示， 該介電窗3之周緣部係受到設置於沿處理室2上部開口 之矩形支持框處的支禮組件13所支樓的。 因此，本實施形態之介電窗3的上方面3f於電漿 處理中係呈平坦狀，亦即，介電窗3下方面3b被支撐 組件13包圍的區域係因該處理室2内外的壓力差而朝 處理室2内部（下方）逐漸地撓曲而凸出。亦即，當原 本平坦的下方面3b朝處理室2内部凸出而變形呈曲面 的同時，其上方原本凸出呈曲面的上方面3f則變得平 15 201031283 坦。 以下’針對使用了本實施形態電漿處理裝置1之半 導體基板（被處理基板w)所進行之電漿處理加以說明。 於圖4所示狀態下’使用真空泵9來對處理室2内 部進行排氣、減壓，以形成真空狀態。其次，微波係從 微波源6透過導波管5而供給至天線4。如此一來，該 微波便朝天線4之徑方向沿槽孔板4a與慢波板4b之間 傳播’並藉由該槽孔板4a之各槽孔41、42而向下方放 射，到達該介電窗3。此時，於該微波前進的同時，於© 介電έι 3内部使其偏振面(piane pi〇arjzati〇n)旋轉而 形成圓偏振(circular polarization)。然後，該微波係穿透 介電窗3而放射至處理室2内部。 藉由導波管5及介電窗3而放射至處理室2内的微 波係以從導波管5導入之位置為中心，於維持特定長度 之波長的情況下不斷地進行反射，而於介電窗3内部傳 播。該微波係於介電窗3内形成疏密位置模式，故可穩 定地形成處理室2内之電漿密度分佈。 ❹ 然後’將氬（Ar)或氣（Xe)等激發電毁用氣體供 給至處理室2内’並藉由前述微波之能量使得處理室2 内之氣體電離化而產生電漿。此處，便可實施例如所謂 之電衆 CVD ( Plasma Chemical Vapor Deposition ;電聚 化學氣相沉積）等電漿處理。意即，藉由圖中未顯示之 下段氣體供給機構等來將形成薄膜用之氣體供給至處 理至2内。接著，藉由使該氣體活性化，而於設置在基 16 201031283 板保持台8之半導體基板（被處理基板w)上堆積^ 等薄膜。如此’反覆地進行將被處理基板W搬入至广 理室2内而堆積薄膜，且於電漿處理後搬出之一連串$ 程，便可針對特定片數的被處理基板W進行連蜱= 漿處理。4b can be formed of a dielectric material such as or called 3 or the like. As shown in Fig. 4, in the present embodiment, the cooling jacket 7 is placed in contact with and overlapped on the antenna 4 (one side). Even when the heat generated by the L inside the processing chamber 2 is accumulated at the dielectric window 3 or the antenna 4 to form a high temperature, 'the heat can be absorbed by the heat transfer medium flowing through the cooling flow path 7a of the cooling jacket 7 Its heat is used to cool the dielectric window 3 or the antenna 4. Further, as shown in Fig. 4, in the present embodiment, the temperature sensor 12 is provided at the antenna 4 which is formed of metal and which is most likely to form a high temperature. Next, the temperature measurement result of the temperature sensor 反馈 is fed back to the control device (not shown) for controlling the plasma processing apparatus 1. Then, by then. This apparatus adjusts the amount of heat transfer medium flowing through the cooling flow path 7a and controls the temperature of the heat transfer medium (IV). Thereby, the temperature of the top plate 3 can be more surely kept constant. As shown in FIG. 4 and FIG. 7F, in the electrical equipment #1 of the present embodiment, in order to perform electrical destruction treatment on the substrate W to be processed, the processing chamber 2 of the plasma processing apparatus 1 is closed by the dielectric window 3; The upper opening allows the inside of the processing chamber 2 to be sealed. Next, the inside of the processing chamber 2 is evacuated and depressurized to form a vacuum state in which plasma can be generated. Next, a pressure difference is formed with the dielectric window 3 as a boundary. In this way, the lower portion 3b of the dielectric window 3 can be gradually flexed to form a curved surface that protrudes toward the inside (downward) of the processing chamber 2 by the pressure difference between the inside and the outside of the processing chamber 2. For example, when the plasma processing apparatus 1 is a device for processing a 300 mm 矽 wafer, the diameter of the dielectric window 3 is about 400 mm, and the maximum deflection of the convex portion of the lower side 3b is about 0.1 mm. In the state shown in FIG. 4, after the inside of the processing chamber 2 is evacuated and depressurized by using the vacuum pump 9, the dielectric window 3 for closing the upper opening of the processing chamber 2 is subjected to a pressure difference between the inside and outside of the processing chamber 2 The load is directed toward the inside of the processing chamber 2. For example, when the pressure value in the plasma generating condition in which the plasma is well generated inside the processing chamber 2 is, for example, about 10 [mPa] to several 10 [Pa], since the outside of the processing chamber 2 is atmospheric pressure, The inside and outside of the processing chamber 2 produces a pressure difference of about 105 [Pa]. As shown in Fig. 4, the peripheral portion of the dielectric window 3 is received by a branch assembly 13 disposed at a rectangular support frame opening along the upper portion of the processing chamber 2. Therefore, the upper surface 3f of the dielectric window 3 of the present embodiment is flat in the plasma processing, that is, the area surrounded by the support member 13 in the lower portion 3b of the dielectric window 3 is due to the pressure inside and outside the processing chamber 2. Poorly, the inside (downward) of the processing chamber 2 is gradually deflected and protruded. That is, when the originally flat lower surface 3b is convex toward the inside of the processing chamber 2 and deformed into a curved surface, the upper surface 3f which is convexly curved upward is flattened. The following is a description of the plasma treatment performed on the semiconductor substrate (substrate to be processed w) using the plasma processing apparatus 1 of the present embodiment. In the state shown in Fig. 4, the inside of the processing chamber 2 is evacuated and decompressed using a vacuum pump 9 to form a vacuum state. Next, the microwave system is supplied from the microwave source 6 to the antenna 4 through the waveguide 5. In this way, the microwave propagates along the radial direction of the antenna 4 along the slot plate 4a and the slow wave plate 4b and is radiated downward through the slots 41 and 42 of the slot plate 4a to reach the medium. Electric window 3. At this time, while the microwave advances, the polarization plane (piane pi〇arjzati〇n) is rotated inside the dielectric 3 3 to form circular polarization. Then, the microwave system penetrates through the dielectric window 3 and is radiated to the inside of the processing chamber 2. The microwave system radiated into the processing chamber 2 by the waveguide 5 and the dielectric window 3 is continuously reflected while maintaining the wavelength of the specific length from the position where the waveguide 5 is introduced, and The electric window 3 propagates inside. The microwave system forms a dense position mode in the dielectric window 3, so that the plasma density distribution in the processing chamber 2 can be stably formed. ❹ Then, an argon (Ar) or gas (Xe) or the like is supplied to the inside of the processing chamber 2, and plasma is generated by ionizing the gas in the processing chamber 2 by the energy of the aforementioned microwave. Here, for example, plasma treatment such as so-called CVD (Plasma Chemical Vapor Deposition) can be performed. That is, the gas for forming a film is supplied to the inside by means of a gas supply mechanism or the like which is not shown in the figure. Then, by activating the gas, a film such as a film is deposited on the semiconductor substrate (substrate to be processed w) provided on the substrate holding substrate 8 of the substrate 16 201031283. By repeating the process of carrying the processed substrate W into the wide processing chamber 2 and stacking the film, and carrying out the film processing after the plasma processing, the substrate W can be processed for a specific number of substrates. .
如前述’本實施形態之電漿處理裝置1係藉由^$ 套7來進行介電窗3與天線4的冷卻，但是，由於;2 理室2内部產生電漿時所發出的熱量，介電窗3與= 4仍會各依其熱膨漲率而或多或少地產生膨漲變形。各 針對此問題，如前述般，依本實施形態之電漿處王 裝置1，於電漿處理中該介電窗3之上方面3f會變為= 坦。又，位於處理室2外側的介電窗3上方面3f係與 天線4重疊而設置的。因此，於電祕理中，即便^ 1之槽孔板4 a係因熱_而變形，亦能在維持其與介1 囪3之密合性的狀態下進行膨漲。因此，介、包 :二間’生間隙，故可防止異常放電的發生 果便此穩定該處理室2内的電漿密度分佈。 〜負死形態之電漿處理裝置丨，槽別妃1 ^維持於能料電窗3相讀合之平錄;；孔態板^ 相較於在處理室2内部產生電喂 理室2内邻谁内「電 亦即在對處 扑传彼、減壓之前’冷卻套7與慢波板 套7皮此更加松合。因此，纽置於介電窗3與冷卻 之_场4 (如板4a倾 廉w僅是其與介電窗3之間，亦可維持== 201031283 7之間的密合性。因此，天線4與介電窗3、以及天線 4與冷卻套7之間不會產生間隙，故可防止當微波傳遞 於天線時造成異常放電。結果便可穩定該處理室2内的 電漿密度分佈。 又，依本實施形態之電漿處理裝置1，介電窗3與 天線4以及天線4與冷卻套7之間皆係不會產生間隙地 緊密貼合。因此，藉由冷卻套7能讓蓄積於介電窗3與 天線4之熱量散逸至處理室2外，故能有效率地進行冷 卻。藉此，能抑制該介電窗3與天線4的熱變形，讓天 線4與介電窗3之間等不會產生空隙，並能防止該微波 傳播於天線時造成異常放電。結果便可穩定處理室2内 之電漿密度分佈。 依本實施形態之介電窗3之製造方法係製成一能 在電漿處理裝置1實際進行電漿處理時讓該介電窗3之 上方面3f恢復平面狀的介電窗3。因此，相較於僅以研 磨來使其下方面形成凸出之曲面並藉由處理室2内外 之壓力差來讓其上方面變為平坦狀的介電窗3，本實施 形態之介電窗3位於天線4側的上方面3f係呈平滑狀 之優異狀態。因此，即便該天線4因熱膨漲而變形，天 線4與介電窗3之間亦不會產生間隙，能防止微波傳播 於天線時造成異常放電。結果便可穩定該處理室2内的 電漿密度分佈。 又，相較於僅以研磨來使介電窗3下方面形成凸狀 曲面的情況，依本實施形態之介電窗3之製造方法僅需 18 201031283 將上方面研磨呈平坦狀即可，而不需設計成複雜之曲面 形狀。因此，依本實施形態之介電窗3之製造方法係可 簡化加工並降低製造成本。As described above, the plasma processing apparatus 1 of the present embodiment performs cooling of the dielectric window 3 and the antenna 4 by means of the sleeve 7, but the heat generated when the plasma is generated inside the chamber 2 is introduced. The electric windows 3 and = 4 will still produce swelling deformation more or less depending on their thermal expansion rate. With respect to this problem, as described above, according to the plasma device 1 of the present embodiment, 3f of the dielectric window 3 becomes = 470 in the plasma processing. Further, the upper portion 3f of the dielectric window 3 located outside the processing chamber 2 is provided so as to overlap the antenna 4. Therefore, in the electric secretary, even if the groove plate 4a of the film 1 is deformed by heat, it can be swollen while maintaining the adhesion to the diebone 3. Therefore, the dielectric gap between the two chambers can prevent the occurrence of abnormal discharge and stabilize the plasma density distribution in the processing chamber 2. ~ The plasma treatment device of negative dead form 丨, the tank 妃 1 ^ is maintained in the reading of the energy storage window 3; the porch plate ^ is compared with the inside of the processing chamber 2 to generate the electric feeding chamber 2 In the neighbors, "the electricity is also in the opposite direction, before the decompression, the cooling jacket 7 and the slow wave plate sleeve 7 are more loose. Therefore, the button is placed on the dielectric window 3 and the cooling field 4 (such as the board) 4a is only between it and the dielectric window 3, and can maintain the adhesion between == 201031283 7. Therefore, the antenna 4 and the dielectric window 3, and between the antenna 4 and the cooling jacket 7 will not Since a gap is generated, abnormal discharge can be prevented when the microwave is transmitted to the antenna. As a result, the plasma density distribution in the processing chamber 2 can be stabilized. Further, according to the plasma processing apparatus 1 of the present embodiment, the dielectric window 3 and the antenna 4, and the antenna 4 and the cooling jacket 7 are closely adhered without gaps. Therefore, the cooling jacket 7 can dissipate the heat accumulated in the dielectric window 3 and the antenna 4 to the outside of the processing chamber 2, so The cooling is performed efficiently, whereby the thermal deformation of the dielectric window 3 and the antenna 4 can be suppressed, and no gap is formed between the antenna 4 and the dielectric window 3, and the like. Moreover, the abnormal discharge can be prevented when the microwave propagates to the antenna. As a result, the plasma density distribution in the processing chamber 2 can be stabilized. The manufacturing method of the dielectric window 3 according to the embodiment is made in the plasma processing apparatus 1 When the plasma treatment is actually performed, the upper surface 3f of the dielectric window 3 is restored to the planar dielectric window 3. Therefore, the convex surface is formed by the lower surface of the dielectric window 3 by the grinding and the inside and outside of the processing chamber 2 In the dielectric window 3 in which the pressure difference is made flat in the upper direction, the dielectric window 3 of the present embodiment is in an excellent state in which the upper surface 3f of the antenna 4 is smooth. Therefore, even if the antenna 4 is heated When it is swollen and deformed, no gap is formed between the antenna 4 and the dielectric window 3, and abnormal discharge can be prevented when the microwave propagates to the antenna. As a result, the plasma density distribution in the processing chamber 2 can be stabilized. In the case where the convex curved surface is formed by the polishing only under the dielectric window 3, the manufacturing method of the dielectric window 3 according to the embodiment only needs to be 18 201031283, and the upper surface is polished to be flat, without designing Complex surface shape. Therefore, A method of manufacturing a window 3 via electrical lines can be simplified form of embodiment of the process and reducing manufacturing costs.
Ο ^依本實施形態之介電窗3，由於提高了天線4盘介 電窗3的密合性，不僅可防止兩組件之間的異常放電， 亦可藉由冷卻套7對天線4及介電窗3之冷卻維持於高 效率。儘可能地縮小對電漿發生狀態影響較大之天線4 等的溫度變化，便能穩定該介電窗3内的電磁場分佈， 亦即穩定電漿密度分佈。 圖6係圖4之部份放大圖，並用以表示介電窗3與 天線4之位置關係。 /、 另外，如圖6所示，於本實施形態之介電窗3的上 方亦可具備有設置於處理室2之連接器14，來作為以 隹口疋方式支撐該天線4之槽孔板4a周緣部的支撐組 =三當該槽孔板4a發生熱膨漲時，不僅會朝存在有介 :窗3與慢波板仙之上下方向膨漲’亦會朝其面方向 大張而變形。因此，將該槽孔板4a周緣部固定之情況， ^其面f向之驗無法被吸收，故會造成上下方向的應 變。但是，/亥連接器14係以能讓其朝面方向自由膨漲、 4a开^之狀態來支撐該槽孔板4a。因此，即使該槽孔板 產生面方向之膨漲’亦不會影響槽孔板乜與介 生。因此’於電衆處理中，該天線4之槽孔板 此，3之密合性的情況下膨張。因 ^ a/、介電窗3之間不會產生間隙，故能防 201031283 止微波傳播於天線時造成異常放電。結果便能穩定該處 理室2内的電裝密度分佈。 X地 又，雖然本實施形態之電漿處理裝置1係用以對 300mm矽晶圓進行電漿處理者，但亦可適用於對較 300mm更大口徑之矽晶圓進行電漿處理者。由於伴隨 著該被處理基板W之矽晶圓的大口徑化，電漿處理裝 置1亦大型化且該介電窗3之撓曲量亦變大，故依本發 明之技術思想係可獲得更佳的效果。 又’本實施形態中’該介電窗3之表面係藉由研磨 © 來使其表面粗糙度變得更小，並讓其與天線4熱傳導時 之接觸熱阻亦變小。因此，可使冷卻套7對介電窗3之 冷卻維持於高效率。因此，依本實施形態能讓介電窗3 較不易受溫度變化之影響，亦不會對電漿產生條件造成 影響，而能於處理室2内穩定地產生電漿。 又，前述本實施形態之介電窗3之製造方法中，該 介電體板31之製造方法與模擬該電漿處理裝置1的夾 治具20之構造等僅為一範例，並未限定而此。再者，❹ 電漿處理裝置1之構造或被處理基板W等，亦可在本 發明技術思想之範圍進行各種變更，亦非限定於前述實 施形態。 本發明係基於2008年8月8日於日本提出申請之 曰本專利申請第2008-205888號，並包含其發明詳細說 明（說明書）、專利申請範圍 '圖式及發明摘要。本發 明係參考龙引用曰本專利申請第2008-205888號所揭露 20 201031283 之全部内容 【圖式簡單說明】 ，1A係本發明實施形態之介電 圖1B係將圖u所示之介電窗C。 窗（如虛線所示）舌—知技術之介電 ^ )重豐進灯比較的側視圖。 ❹介 ^ According to the dielectric window 3 of the present embodiment, since the adhesion of the dielectric window 3 of the antenna 4 is improved, not only the abnormal discharge between the two components can be prevented, but also the antenna 4 and the intermediate layer 4 can be cooled by the cooling sleeve 7. The cooling of the electric window 3 is maintained at high efficiency. By reducing the temperature variation of the antenna 4 or the like which greatly affects the plasma generation state as much as possible, the electromagnetic field distribution in the dielectric window 3 can be stabilized, that is, the plasma density distribution is stabilized. Figure 6 is a partial enlarged view of Figure 4 and is used to show the positional relationship between the dielectric window 3 and the antenna 4. Further, as shown in FIG. 6, a connector 14 provided in the processing chamber 2 may be provided above the dielectric window 3 of the present embodiment as a slot plate for supporting the antenna 4 in a manner of a port. 4a Supporting group at the peripheral edge=3 When the slot plate 4a is thermally expanded, it will not only be in the presence of the window 3, but also in the upper and lower directions of the slow wave plate. . Therefore, when the peripheral edge portion of the slit plate 4a is fixed, the surface f cannot be absorbed, so that the deformation in the vertical direction is caused. However, the /hel connector 14 supports the slot plate 4a in a state in which it can be freely swollen in the direction of the surface and 4a is opened. Therefore, even if the slot plate is swollen in the direction of the face, it does not affect the slot plate and the interface. Therefore, in the case of the electric power treatment, the slot plate of the antenna 4 is expanded in the case of the adhesion of 3. Because ^ a /, there is no gap between the dielectric window 3, it can prevent the abnormal discharge caused by the microwave propagation to the antenna in 201031283. As a result, the electrical density distribution in the processing chamber 2 can be stabilized. Further, although the plasma processing apparatus 1 of the present embodiment is used for plasma processing of a 300 mm silicon wafer, it is also applicable to plasma processing of a wafer having a larger diameter of 300 mm. The plasma processing apparatus 1 is also enlarged in size and the amount of deflection of the dielectric window 3 is also increased due to the large diameter of the wafer to be processed W. Therefore, according to the technical idea of the present invention, it is possible to obtain more Good results. Further, in the present embodiment, the surface of the dielectric window 3 is made to have a smaller surface roughness by grinding ©, and the contact thermal resistance when it is thermally conducted to the antenna 4 is also reduced. Therefore, the cooling of the dielectric cover 3 by the cooling jacket 7 can be maintained at a high efficiency. Therefore, according to this embodiment, the dielectric window 3 can be made less susceptible to temperature changes and does not affect the plasma generation conditions, and plasma can be stably generated in the processing chamber 2. Further, in the method of manufacturing the dielectric window 3 of the present embodiment, the method of manufacturing the dielectric plate 31 and the structure of the fixture 20 simulating the plasma processing apparatus 1 are merely examples, and are not limited thereto. this. Further, the structure of the plasma processing apparatus 1, the substrate W to be processed, and the like may be variously modified within the scope of the technical idea of the present invention, and is not limited to the above embodiment. The present invention is based on Japanese Patent Application No. 2008-205888, filed on Jan. 8, 2008, the entire disclosure of which is hereby incorporated by reference. The present invention is based on the entire disclosure of the Japanese Patent Application No. 2008-205888, the disclosure of which is incorporated herein by reference. C. The window (as indicated by the dashed line) tongue--the dielectric of the technology ^) The side view of the comparison of the heavy-duty lights. ❹
圖2係圖1所示之介電窗未形成 體板之剖面圖。 Λ田由之則的該介電 圖3Α係說明本發明實施形態之介電窗 的概略剖面圖。 _之製造方法 園3 Β係説明本發明實施形態之介電 的另一概略剖面圖。 裏仏方去 面圖圖4 #本發明實施耗之電漿處理裝置的整體剖 3係本發明實施形態之槽孔板的—例之俯視圖。 圖6係圖4之部分放大圖。 2 處理室 3b 下方面 4 天線 4b 慢波板 5a 外側導體 6 微波源 【主要元件符號說明】 1 電漿處理裝置 3 介電窗 3f 上方面 4a 槽孔板 5 導波管 5b 内側導體 21 201031283 7 冷卻套 7a 冷卻流道 8 基板保持台 9 真空泵 10 南頻電源 11 氣體通道 12 溫度感測器 13 支撐組件 14 連接器 20 炎治具 21 夾治具本體 22 Ο型環 23 真空泵 30 介電窗 31 介電體板 41 ' 42 槽孔Figure 2 is a cross-sectional view showing the dielectric window of Figure 1 not forming a body plate. Fig. 3 is a schematic cross-sectional view showing a dielectric window according to an embodiment of the present invention. Manufacture of the method of the invention is another schematic cross-sectional view of the dielectric of the embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a plan view showing an example of a slot plate according to an embodiment of the present invention. Figure 6 is a partial enlarged view of Figure 4. 2 Processing chamber 3b Lower side 4 Antenna 4b Slow wave plate 5a Outer conductor 6 Microwave source [Main component symbol description] 1 Plasma processing device 3 Dielectric window 3f Upper side 4a Slot plate 5 Waveguide tube 5b Inner conductor 21 201031283 7 Cooling jacket 7a Cooling runner 8 Substrate holding table 9 Vacuum pump 10 South frequency power supply 11 Gas channel 12 Temperature sensor 13 Support assembly 14 Connector 20 Yan fixture 21 Clamping body 22 Ο-ring 23 Vacuum pump 30 Dielectric window 31 Dielectric plate 41 ' 42 slot