201030168 六、發明說明· 【發明所屬之技術領域】 本發明係有關於一種磁控濺鍍陰極’尤指一種於單一 金屬管設有複數濺鍍區之磁控濺鍍陰極’可同時針對多個 基板進行鍍膜’避免二次電漿浪費’減少功率及靶材損失， 同時可減少被濺鍍出之靶材原子分子沉積於磁控濺鍍陰極 後方腔體壁之機率’提高把材使用率。 【先前技術】 自九十年代以來，人們開始注重多層膜技術的發展， 多層鍍膜在工業上的應用已行之有年，且被廣泛應用於機 械製造、汽車工業、模具工業、航太應用等領域。在諸多 磯射鍍膜技術中’真空磁控濺射鍍膜技術係被廣泛應用於 家電電器、鐘表、燈具、工藝美術品、玩具、車燈反光罩、 手機按鍵外殼以及儀器儀表、塑料、玻璃、陶瓷、磁碍等 ® 表面裝飾性鍍膜及工模具的功能塗層。 請參閱第一圖與第二圖所示習知圓柱磁控濺鍍陰極結 構，該磁控濺鍍陰極10包括一中空圓筒狀金屬管丨丨，於 該金屬管11内設有複數磁鐵元件12，該磁鐵元件12主要 係由複數磁南極（亦即圖示該S端）朝向該金屬管u外之磁 石m ’以及複數祀b極⑷卩_該N端）朝向該金 11外之磁石122所組成’該磁南極朝向該金屬管u 场石121係平行該金屬管u之轴向配置，該磁北極朝向該 金屬管11外之磁石122則以-^距離圍繞該磁南極朝向該 201030168 金屬官11外之磁石121，由該磁石121及磁石122構成一 裱形磁通道14 (如第一圖所示），該環形磁通道14區域形 成一濺鍍區13，該金屬管π外部套設有一靶材丨5，與該 靶材15相距一定距離且對應於該磁通道14位置設有二= 板20，該磁控濺鍍陰極1〇、基板2〇設置於一反應腔體μ 内；當通電時，電子受到電磁場作用於磁通道14内循一定 方向環繞移動，於磁力線區域141 (如第二圖所示）產生 電漿並濺鍵乾材15，使乾材15之原子分子沉積於基 • 形成薄膜。 由上述結構可知，習知磁控濺鍍陰極所存在之缺失如 一、 由於僅設置一濺鍍區13，因此一次僅能針對一個美 20進行鍍膜。 土攸 二、 由於磁鐵元件12偏置於該金屬管η —侧，因此於 力線區域.141之背面，亦即該金屬t u未設置磁鐵 件12之—側會產生二次電漿，造成功率及姆15損 •失。 貝 三、 部分被滅鐘出之乾材原子分子會沉積於金屬管 方（亦即金屬f 11未設置磁鐵元件12之一側） 壁161，造成耙材15之損失。 腔體 【發明内容】 有鑑於習知技狀缺失，本料之目时 磁控滅鑛陰極，可透過單-磁控減鍍陰極同時針對多= 201030168 板進行鍍膜’避免二次電漿浪費，減少功率及靶材損失， 同時可減少被濺鍍出之靶材原子分子沉積於磁控濺鍍陰極 後方腔體壁之機率，提高靶材使用率。 為達到上述目的，本發明提出一種磁控濺鍍陰極，該 磁控藏鍍陰極包含一金屬管，該金屬管為一中空圓管，於 該金屬管内設有複數磁鐵元件，該複數磁鐵元件係用以於 該金屬管表面形成複數濺鍍區，每一濺鍍區對應於一基 板’該複數賤鍍區分別具有一磁通道，且各濺鍍區之磁通 • 道相互連通形成一封閉迴路，利用該磁通道導引電子於此 封閉迴路循環移動。 為使貴審查委員對於本發明之結構目的和功效有更 進一步之了解與認同，茲配合圖示詳細說明如后。 【實施方式】 以下將參照隨附之圖式來描述本發明為達成目的所使 用的技術手段與功效，而以下圖式所列舉之實施例僅為輔 助說明，以利貴審查委員瞭解，但本案之技術手段並不限 於所列舉圖式。 請參閱第三圖至第五圖所示，本發明所提出之具有複 數鑛膜區域之磁控錢鍵陰極，該減錄陰極30包含一金屬管 31，該金屬管31為一中空圓管，於該金屬管31内設有複 數磁鐵元件32，該複數磁鐵元件32主要係由複數第一磁 石321及複數第二磁石322所構成，該第一磁石321及第 二磁石322設置之磁極方向相反，於本實施例中，該第一 磁石321為磁南極（亦即圖示S端）朝向該金屬管31外，該 6 201030168 第二磁石322為磁北極（亦即圖示N端）朝向該金屬管31 外’除此之外，也可將該第一磁石321設為磁北極朝向該 金屬管31外，該第二磁石322設為磁南極朝向該金屬管 31外’換s之’該第一磁石321及第二磁石322朝向該金 屬管31外之磁極相反即可。 請參閱第三圖及第四圖所示，該第一磁石321包括一 環狀磁石區3211以及複數之軸向磁石區3212，如第四圖 所示設有二軸向磁石區3212，該環狀磁石區3211係由該 0 複數第一磁石321以該金屬管31之軸心為中心環繞設置於 該金屬管31之一端，該二軸向磁石區3212係分別由該複 數第一磁石321以平行於該金屬管31轴向之方式排列設置 於該金屬管31内；該第二磁石322則排列呈連續彎折狀， 使得該第二磁石322具有複數凹入部3221，該凹入部3221 係對應於該第一磁石321之軸向磁石區3212設置’且該軸 向磁不區3212係伸入該凹入部3221 ;於本實施例中，該 第一磁石321設置有二軸向磁石區3212，該二軸向磁石區 ❿ 3212係對稱於該金屬管31中心設置於該金屬管31兩側邊 (如第四圖所示，第三圖僅顯示出一側邊），該第一磁石321 及第二磁石322之間具有一定距離，於該第一磁石321及 第二磁石322之間形成一磁通道34，該磁通道34為一連 續之封閉迴路，而每一軸向磁石區3212對應其外部之第二 磁石322所形成之’’ IJ”型磁通道為一濺鍍區33，如第五 圖所示，該兩濺鍍區33對稱於該金屬管31中心設置於該 金屬管31徑向兩侧’該金屬管31外部套設有一靶材35， 該金屬管31旋轉時可同步帶動該靶材35旋轉，與該靶材 201030168 35相距一定距離且對應該二濺鍍區犯分別設有一其 20、’該磁控贿陰極3〇、基板2()設置於—反應腔體％土反 當通電時’電子受到電磁場作用於磁通道34⑽ ^ 刪如第四圖磁通道34内所標示箭頭方向)，會 2 區域34i纟生電漿並錢_材35，使乾材35之原子2 沉積於相對兩邊之基板20且形成薄膜，由於乾材二 兩側均可被轟擊’形成相對方向之助力，因此可提高· 效率；至於本發明該金屬管31之-端磁通道呈環狀（= 狀磁石區3211)，可能容易導致該處之轉35被爲^ 多j關於此點，可藉由調整磁石強度、磁石分佈靶材形 狀變化等方式，將該環狀磁石區3211之磁石適度作調整即 可0 再次強調說明的是，第四圖所示該磁通道34之其中一 端形成一入口 34A，另一端形成一出口 34B，然實際該磁通 道34應為一連續且封閉之迴路。此外，根據上述實施例設 计原則’可於金屬管31設置三組或三組以上之濺鑛區33， ❹ 即可針對更多數量之基板20進行鍍膜。 綜上所述，本發明提供之具有複數鍍膜區域之磁控濺 鍍陰極，透過磁鐵元件設計於金屬管表面形成複數濺鍍 區’利用磁場配置導引電子於封閉迴路内循環移動，可同 時針對多組基板進行鍍膜，可以較少之設備成本增加產 量，避免二次電黎:浪費，減少功率及乾材損失，同時可減 少被濺鍍出之靶材原子分子沉積於磁控濺鍍陰極後方腔體 壁之機率，提高把材使用率。 惟以上所述者’僅為本發明之實施例而已，當不能以 201030168 之限定本發明所實施之範圍。即大凡依本發明申請專利範 圍所作之均等變化與修飾，皆應仍屬於本發明專利涵蓋之 範圍内，謹請貴審查委員明鑑，並祈惠准，是所至禱。 201030168 【圖式簡單說明】 第一圖係習知磁控濺鍍陰極之結構示意圖。 第二圖係第一圖之A-A剖面配合基板設置於反應腔體 之結構示意圖。 '第三圖係本發明實施例之立體結構示意圖。 第四圖係第三圖實施例之磁通道展開示意圖。 第五圖係第三圖之B-B剖面配合基板設置於反應腔體 之結構示意圖。 Φ 【主要元件符號說明】 先前技術： 10- 磁控濺鍍陰極 11- 金屬管 12- 磁鐵元件 121 -磁南極朝向金屬管外之磁石 # 122-磁北極朝向金屬管外之磁石 13- 濺鍍區 14- 磁通道 141 -磁力線區域 15- 靶材 16 -反應腔體 161-腔體壁 20-基板 201030168 本發明： 30- 濺鍍陰極 31- 金屬管 3 2-磁鐵元件 321_第一磁石 3211_環狀磁石區 0 3212_抽向磁石區 322 -第二磁石 3221-凹入部 33- 濺鍍區 34- 磁通道 3 41 -磁力線區域 34A-入口 34B-出口 參 35-靶材 36-反應腔體201030168 VI. INSTRUCTIONS · TECHNICAL FIELD The present invention relates to a magnetron sputtering cathode, especially a magnetron sputtering cathode having a plurality of sputtering channels in a single metal tube. The substrate is coated to 'avoid secondary plasma waste' to reduce power and target loss, and at the same time reduce the probability of deposited atomic molecules deposited on the back cavity wall of the magnetron sputtering cathode. [Prior Art] Since the 1990s, people have begun to pay attention to the development of multilayer film technology. Multi-layer coating has been used in industry for many years, and is widely used in machinery manufacturing, automotive industry, mold industry, aerospace applications, etc. field. In many laser coating technology, 'vacuum magnetron sputtering coating technology is widely used in home appliances, watches, lamps, arts and crafts, toys, lamp reflectors, cell phone keypads and instruments, plastics, glass, ceramics. , magnetic barriers, etc. • Surface decorative coatings and functional coatings for tooling. Referring to the conventional cylindrical magnetron sputtering cathode structure shown in FIG. 1 and FIG. 2, the magnetron sputtering cathode 10 includes a hollow cylindrical metal tube, and a plurality of magnet elements are disposed in the metal tube 11. 12, the magnet element 12 is mainly composed of a plurality of magnetic south poles (that is, the S end shown) toward the magnet m' outside the metal tube u and a plurality of 祀b poles (4) 卩 _ the N end) facing the magnet outside the gold 11 122 is composed of 'the magnetic south pole facing the metal tube u field stone 121 is parallel to the axial direction of the metal tube u, and the magnetic north pole facing the metal tube 11 outside the metal tube 11 is at a distance of -^ around the magnetic south pole toward the 201030168 The magnet 121 outside the metal official 11 and the magnet 121 and the magnet 122 form a meandering magnetic channel 14 (as shown in the first figure), the annular magnetic channel 14 region forms a sputtering zone 13, and the metal tube π outer sleeve a target 丨5 is disposed at a distance from the target 15 and corresponding to the position of the magnetic channel 14 is provided with a second plate 20, and the magnetron sputtering cathode 1 〇 and the substrate 2 〇 are disposed in a reaction chamber μ When energized, the electrons are subjected to an electromagnetic field acting on the magnetic channel 14 to move around in a certain direction The magnetic field region 141 (shown in the second figure) generates a plasma and splashes the dry material 15 to deposit atomic molecules of the dry material 15 on the substrate to form a film. It can be seen from the above structure that the conventional magnetron sputtering cathode has a defect such that since only one sputtering region 13 is provided, only one US 20 can be coated at a time. In the second case, since the magnet element 12 is offset from the side of the metal tube η, the back side of the force line region 141, that is, the side of the metal tu where the magnet member 12 is not disposed, generates secondary plasma, resulting in power. And the 15 loss and loss. 3. The dry matter atomic molecules that are partially extinguished are deposited on the metal pipe (that is, the metal f 11 is not provided on one side of the magnet element 12) wall 161, causing the loss of the coffin 15. Cavity [Invention] In view of the lack of the prior art, the magnetic controlled ore-extinguishing cathode of the present material can be coated with a single-magnetron-reduced cathode at the same time for multiple = 201030168 plates to avoid secondary plasma waste. Reduce power and target loss, and reduce the probability of the atomic molecules of the sputtered target deposited on the cavity wall behind the magnetron sputtering cathode, and improve the target utilization rate. In order to achieve the above object, the present invention provides a magnetron sputtering cathode, the magnetron plating cathode comprises a metal tube, the metal tube is a hollow circular tube, and a plurality of magnet elements are disposed in the metal tube, and the plurality of magnet elements are Forming a plurality of sputtering regions on the surface of the metal tube, each sputtering region corresponding to a substrate. The plurality of plating regions respectively have a magnetic channel, and the magnetic flux channels of each sputtering region are connected to each other to form a closed loop. The magnetic channel is used to guide electrons to move cyclically in the closed loop. In order to enable the reviewing committee to have a better understanding and approval of the structural purpose and efficacy of the present invention, the detailed description is as follows. [Embodiment] Hereinafter, the technical means and effects of the present invention for achieving the object will be described with reference to the accompanying drawings, and the embodiments listed in the following drawings are only for the purpose of explanation, so that the reviewer understands, but the case Technical means are not limited to the illustrated figures. Referring to the third to fifth figures, the magnetically controlled magnetic button cathode having a plurality of mineral film regions is provided. The subtractive cathode 30 comprises a metal tube 31. The metal tube 31 is a hollow circular tube. A plurality of magnet elements 32 are disposed in the metal tube 31. The plurality of magnet elements 32 are mainly composed of a plurality of first magnets 321 and a plurality of second magnets 322. The first magnets 321 and the second magnets 322 are disposed with opposite magnetic poles. In this embodiment, the first magnet 321 is a magnetic south pole (ie, the S end shown) facing the metal tube 31. The 6 201030168 second magnet 322 is a magnetic north pole (ie, the N end shown) faces the In addition to the metal tube 31, the first magnet 321 may be set to the magnetic north pole toward the outside of the metal tube 31, and the second magnet 322 may be set to the magnetic south pole toward the outer side of the metal tube 31. The first magnet 321 and the second magnet 322 may be opposite to the magnetic poles outside the metal tube 31. Referring to the third and fourth figures, the first magnet 321 includes an annular magnet region 3211 and a plurality of axial magnet regions 3212. As shown in the fourth figure, a biaxial magnet region 3212 is provided. The magnetized portion 3211 is disposed around one end of the metal tube 31 around the axis of the metal tube 31 by the first plurality of first magnets 321 , and the two-axis magnet units 3212 are respectively formed by the plurality of first magnets 321 Arranged in the metal tube 31 in parallel with the axial direction of the metal tube 31; the second magnet 322 is arranged in a continuous bending shape, so that the second magnet 322 has a plurality of concave portions 3221, and the concave portion 3221 corresponds to The axial magnet region 3212 of the first magnet 321 is disposed and the axial magnetic region 3212 extends into the recessed portion 3221; in the embodiment, the first magnet 321 is provided with a biaxial magnet region 3212. The two-axis magnet region ❿ 3212 is symmetrically disposed on the two sides of the metal tube 31 at the center of the metal tube 31 (as shown in the fourth figure, the third figure only shows one side), the first magnet 321 and The second magnet 322 has a certain distance between the first magnet 321 and the second A magnetic channel 34 is formed between the stones 322. The magnetic channel 34 is a continuous closed loop, and each of the axial magnet regions 3212 is formed by a "'IJ" type magnetic channel formed by the second magnet 322 outside thereof. a plating zone 33, as shown in the fifth figure, the two sputtering zones 33 are symmetrically disposed on the radial sides of the metal pipe 31 at the center of the metal pipe 31. The metal pipe 31 is externally provided with a target 35, the metal pipe When the rotation is 31, the target 35 can be rotated synchronously, and the target 201030168 35 is separated from the target by a certain distance and corresponding to the two sputtering zones, respectively, 20, 'the magnetic control brigade cathode 3 〇, the substrate 2 () is set at - When the reaction chamber is partially soiled, the electrons are subjected to an electromagnetic field acting on the magnetic channel 34 (10) ^ as indicated by the direction of the arrow indicated in the magnetic channel 34 of the fourth figure), and the plasma is generated in the 2 area 34i and the material is 35 The atom 2 of the dry material 35 is deposited on the opposite sides of the substrate 20 and forms a thin film. Since both sides of the dry material can be bombarded to form a relative direction of assistance, the efficiency can be improved. As for the end of the metal tube 31 of the present invention The magnetic channel is ring-shaped (= magnet area 3211), which may easily cause the At the point of 35, it is possible to adjust the magnet of the annular magnet region 3211 by adjusting the magnet strength and the shape of the magnet to change the shape of the target. In the fourth figure, one end of the magnetic channel 34 forms an inlet 34A, and the other end forms an outlet 34B. Actually, the magnetic channel 34 should be a continuous and closed circuit. Further, according to the above embodiment, the design principle can be The metal tube 31 is provided with three or more sets of sputtering areas 33, so that a larger number of substrates 20 can be coated. In summary, the present invention provides a magnetron sputtering cathode having a plurality of coating regions, Through the magnet element design, a plurality of sputtering regions are formed on the surface of the metal tube. The magnetic field is used to guide the electrons to circulate and move in the closed loop, and the coating can be applied to multiple sets of substrates at the same time, which can increase the output by less equipment cost and avoid secondary electricity. : Waste, reduce power and dry material loss, and reduce the probability of deposited atomic molecules deposited on the back cavity wall of the magnetron sputtering cathode, increasing the utilization rate of the material.However, the above description is only an embodiment of the present invention, and the scope of the present invention cannot be limited by 201030168. That is to say, the equivalent changes and modifications made by the applicant in accordance with the scope of application of the present invention should still fall within the scope covered by the patent of the present invention. I would like to ask your reviewing committee to give a clear understanding and pray for it. 201030168 [Simple description of the diagram] The first diagram is a schematic diagram of the structure of a conventional magnetron sputtering cathode. The second figure is a schematic view showing the structure of the A-A cross-section matching substrate disposed in the reaction chamber in the first figure. 'The third figure is a schematic view of the three-dimensional structure of the embodiment of the present invention. The fourth figure is a schematic diagram of the magnetic channel expansion of the third embodiment. The fifth figure is a schematic view showing the structure of the B-B cross-section of the third drawing in the reaction chamber. Φ [Main component symbol description] Prior art: 10- Magnetron sputtering cathode 11- Metal tube 12- Magnet element 121 - Magnetic south pole facing magnet outside the metal tube #122-Magnetic north pole facing the metal tube 13- Sputtering Zone 14 - Magnetic Channel 141 - Magnetic Field Region 15 - Target 16 - Reaction Chamber 161 - Cavity Wall 20 - Substrate 201030168 The present invention: 30 - Sputtered Cathode 31 - Metal Tube 3 - 2 Magnet Element 321 - First Magnet 3211 _ annular magnet zone 0 3212_drawn magnet zone 322 - second magnet 3221 - recess 33 - sputter zone 34 - magnetic channel 3 41 - magnetic field line 34A - inlet 34B - outlet ginseng 35 - target 36 - reaction chamber body