201027161 :六、發明說明： 【發明所屬之技術領域】 一種產生類似原子的電磁波引發透明現象的結構與方 法’尤指一種可調控電磁波引發透明現象的反應頻率的結構與 方法。 【先前技術】 「電磁波引發透明」（electromagnetically induced transparency ; EIT)的現象是共振頻率的雷射光（一般稱之 ❹ 為探測雷射）不被其傳遞介質吸收，亦即介質對此探測雷射而 言為透明，而此透明現象是由一耦合雷射作用下所引起的。 利用這種非常特殊的量子效應，人們可將光速減慢’甚至 將光捕捉（trap)在介質之中，其可以衍生出許多控制光傳播的 相關應用，例如光開關或光子電腦等等。然而，如文獻Stephen E. Harris, PHYSICS TODAY, JULY, 37-42(1997) ； K.-J. Boiler, PHYSICAL REVIEW LETTERS, VOLUME66, NUMBER20, 2593-2596(1991)所述，這種量子級效應必須在極為嚴苛的條 ® 件下才得以實現，例如需要在低溫環境，且施加的耦合雷射需 要有非常大的強度，又產生此一效應的入射電磁波頻率受限於 使用的原子本身的特性’我們無法任意的調控產生電磁波引發 透明效應的頻率，其導致在實際應用面受到了相當大的限制， 難以應用於光電元件，無法發揮其實際效益。 【發明内容】 爰是’本發明的主要目的在於揭露一種可藉由簡單的結構 尺度控制’讓入射電磁波產生不同頻率的電磁波引發透明現象 201027161 的結構與方法。 μ本種實現電磁波弓1發透明現象的結構與其反應 而㈣、，诗的調整方法，其結構為在U設置-共振結構 ^ ~共振結構為導體金屬材料，且設於該晶片上，並該 陣列排列的複數第—裂隙環型共振器與複數第 、振器，該第―⑽純型共振器與該第二裂隙環型 二容置置’且該第—裂隙環型共振器為凹字形而具 ❹ ❹ ^ a 、第—裂隙環型共振器為一矩形環並具一缺口， 2第—裂隙環型共振器插人該容置空間内，其讓該缺口位於 該容置空間之内並朝下設置。 、 而其方法為藉料的結構，該第-獅環型共振器與 隙環型共振器關隔距離，並提供—€磁波並入射該 結構，即可機實現電魏引發咖反應的效率。 據此彻本發㈣結構與方法，只要讓所構成的週期結 ，大於欲發生EIT效應的波長’可以在單—的電磁波施加下以 及至溫環境實現類似EIT效應’同時其產生效應的頻率可以透 過結構設計下任意調控，而不再受限於材料时雜質，因而 可依，實際的需要加以|^計，而擴大其應用價值。 【實施方式】 茲有關本發明之詳細内容，現配合圖式說明如下： 振器參二「I1」「圖6」所示，本發明讓第環型共 振器11與第二_環型共振器12組成共振結構1G，其中如 =1」所示，第-裂隙環型共振器u為導體金屬材料，其 可為選自金、銀、銘與銅的任—種，且第—裂隙環型共振器 4 201027161 其入射不同頻率電磁波（圖 11呈凹字形而具一容置空間 未示）的穿透率如「圖2」所示。 而如 金屬材料，SI示’該第二裂隙環型共振器12亦為導體 屬材料其可為選自金、銀、銘與鋼的任一種，且該 ==12為矩形環狀並具一缺口 121，其入二頻 率電磁波的穿透率如「圖4」所示。又如「圖5」所示，該第 -裂隙環型共振器12插人該容置空間lu内，其讓該缺口⑵ 位於該容置空間U1之内並朝下設置即組成共振結構ι〇，且 該第-裂隙環型共振器Η與該第二裂隙環型共振器12的間隔 距離D為1G奈棚6GG奈米’其人射不同頻率電磁波的穿透 率如「圖6」所示’其在特定的頻率37 ΤΗζ即具高穿透率， 亦即產生「電磁波引發透明」（心t觸gnetically induced transparency ; EIT)的現象。201027161: VI. Description of the invention: [Technical field to which the invention pertains] A structure and method for generating a transparent wave phenomenon caused by an electromagnetic wave similar to an atom, particularly a structure and method for regulating the reaction frequency of electromagnetic waves to initiate a transparency phenomenon. [Prior Art] The phenomenon of "electromagnetically induced transparency" (EIT) is that the laser light of the resonance frequency (generally referred to as the detection laser) is not absorbed by the transmission medium, that is, the medium detects the laser. It is transparent, and this transparency is caused by a coupled laser. With this very special quantum effect, one can slow down the speed of light' and even trap light in the medium, which can be derived from many related applications that control light propagation, such as optical switches or photonic computers. However, as described in the literature by Stephen E. Harris, PHYSICS TODAY, JULY, 37-42 (1997); K.-J. Boiler, PHYSICAL REVIEW LETTERS, VOLUME 66, NUMBER20, 2593-2596 (1991), this quantum-scale effect It must be implemented under extremely severe strips, such as in low temperature environments, and the applied coupled lasers require very large intensities, and the frequency of the incident electromagnetic waves that produce this effect is limited by the atoms used. Characteristics 'We can't arbitrarily regulate the frequency at which electromagnetic waves cause a transparent effect, which leads to considerable limitations in practical applications. It is difficult to apply to photovoltaic components and cannot realize their practical benefits. SUMMARY OF THE INVENTION The main object of the present invention is to disclose a structure and method for inducing transparency by electromagnetic waves of different frequencies at incident electromagnetic waves by simple structural scale control. The structure of the electromagnetic wave bow 1 transparent phenomenon is reacted with it (4), the poem adjustment method, the structure is a U-resonant structure, the resonant structure is a conductor metal material, and is disposed on the wafer, and a plurality of first-fracture ring resonators arranged in an array, and a plurality of first and second vibrators, the first (10) pure type resonator and the second slit ring type two-capacitor disposed and the first-fracture ring type resonator is concave The ❹ a ^ a, the first-fracture ring type resonator is a rectangular ring and has a notch, and the 2nd-fracture ring type resonator is inserted into the accommodating space, so that the notch is located in the accommodating space and Set down. The method is a borrowing structure, and the first-lion ring type resonator is separated from the gap ring type resonator, and provides a magnetic wave and is incident on the structure, so as to realize the efficiency of the electricity-induced coffee reaction. According to this, the structure and method of the present (4), as long as the periodic knot formed, is greater than the wavelength of the EIT effect to be generated, and the frequency of the effect can be achieved under the application of a single electromagnetic wave and a temperature-like environment. Through the arbitrary control of the structure design, and no longer limited by the impurities in the material, it can be based on the actual needs, and expand its application value. [Embodiment] The details of the present invention will now be described with reference to the following drawings: The vibrator is shown in "I1" and "Fig. 6", and the present invention allows the ring type resonator 11 and the second ring type resonator. 12 is a resonant structure 1G, wherein, as indicated by =1", the first-fracture ring resonator u is a conductor metal material, which may be any one selected from the group consisting of gold, silver, Ming and copper, and the first-fracture ring type Resonator 4 201027161 The transmittance of electromagnetic waves incident on different frequencies (Fig. 11 is concave and has a housing space not shown) is shown in Fig. 2. For example, the metal material, SI shows that the second slit ring resonator 12 is also a conductor material, which may be any one selected from the group consisting of gold, silver, metal and steel, and the ==12 is a rectangular ring shape and has a The gap 121 has a transmittance of two-frequency electromagnetic waves as shown in Fig. 4. As shown in FIG. 5, the first-fracture ring resonator 12 is inserted into the accommodating space lu, and the notch (2) is located inside the accommodating space U1 and is disposed downward to form a resonant structure. And the distance D between the first-fracture ring resonator Η and the second-fracture ring resonator 12 is 1G, and the penetration rate of electromagnetic waves of different frequencies is as shown in FIG. 6 'It has a high penetration rate at a specific frequency of 37 ,, which is the phenomenon of "electromagnetic wave induced transparency" (Ent).
請再參閱「圖7」所示，本發明可實現電磁波引發透明現 象的結構，其為實施於一晶片20上’共振結構1〇為導體金屬 材料（即第一裂隙環型共振器u與第二裂隙環型共振器12)， 且設於該晶片20上，並該共振結構10包含陣列排列的複數第 一裂隙環型共振器11與複數第二裂隙環型共振器12，且該第 一裂隙環型共振器1丨與該第二裂隙環型共振器12為一對」嗖 置。 °又 请再參閲「圖8」〜「圖13」所示，而本發明調整穿透率 的步驟包含： 提供複數第一裂隙環型共振器U,該第一裂隙環型共振 器11為凹字形而具一容置空間111 ; 201027161 提供複數第二裂隙環型共振器12,該第二裂隙環型共振 器12為-矩形環並具—缺口 121，且該第二裂隙環型共振器 12插入該容置空間lu 0，其讓該缺口 121位於該容置 111之内並朝下設置； 將該第-裂隙環型共振器u與該第二裂隙環型共振器 形成於-日日日片20上且-對—對絲置並形成—矩陣排列 振結構10(如「圖7」所示）； ❹ 調整該第—裂隙環型共振11 11與該第二裂隙環型共振 12的間隔距離D; 'Referring to FIG. 7 again, the present invention can realize a structure in which electromagnetic waves induce a transparent phenomenon, which is implemented on a wafer 20, and the 'resonant structure 1' is a conductive metal material (ie, the first crack ring type resonator u and the first a second slit ring type resonator 12) is disposed on the wafer 20, and the resonant structure 10 includes a plurality of first slit ring type resonators 11 and a plurality of second slit ring type resonators 12 arranged in an array, and the first The split ring resonator 1丨 and the second slit ring resonator 12 are paired. ° Please refer to FIG. 8 to FIG. 13 again, and the step of adjusting the transmittance of the present invention includes: providing a plurality of first fracture ring type resonators U, wherein the first fracture ring type resonator 11 is The recessed shape has an accommodating space 111; 201027161 provides a plurality of second slit ring type resonators 12, which are - rectangular rings and have a notch 121, and the second slit ring type resonator 12 is inserted into the accommodating space lu 0, wherein the notch 121 is located inside the accommodating portion 111 and facing downward; the first-fracture ring type resonator u and the second cleavage ring type resonator are formed in the day-to-day The wafer 20 is on-and-pair-paired and formed into a matrix-arranged vibrating structure 10 (as shown in FIG. 7); ❹ adjusting the first-fracture ring-type resonance 11 11 and the second-fracture ring-type resonance 12 Spacing distance D; '
提供-電雜（®未^)，該電磁波的人財向垂直該共振 結構10的平面’且該電磁波的電場偏振方向與該缺口⑵、 向平行並入射該共振結構1〇。 依據上述的方法調整抑關隔距離D(如「@ 8」、「圖 10」、「圖12」所示）’其穿透率將會隨之而改變（如「圖9」 11」、「圖13」所示）（間距减小則穿透率提高）。請再參閱「The electric energy is supplied to the plane of the resonant structure 10 and the electric field polarization direction of the electromagnetic wave is parallel to the notch (2) and incident on the resonant structure 1〇. According to the above method, the separation distance D (such as "@8", "Figure 10", "Figure 12") will be adjusted. The penetration rate will change accordingly (such as "Figure 9" 11", " Figure 13") (the pitch is increased and the penetration rate is increased). Please refer to "
14」所不’其即為該第—裂隙環型共振器“與 型共娜12_隔聰透料鋪率的環 睛再參閱「圖15」所示，如要改變EIT發生頻率，可 -=環型共振器n與該第二裂隙環型共振器_ 長LT發生醉，若該第二裂_型共振器u =二裂隙環型共振器11長度為_-， j產^ EIT反應的頻率為48 THz，因此本發明可透過調整該 共振㈣與該第二_環财㈣ = 得以精確控健生EIT的鮮位置。 的長度而 20102716114: No, it is the first-fracture ring resonator "see the "Figure 15" as shown in Figure 15 for the ring-shaped ring-shaped resonator." If you want to change the frequency of EIT, you can - = ring resonator n and the second crack ring resonator _ length LT drunk, if the second split _ type resonator u = two crack ring resonator 11 length _-, j yield ^ EIT reaction The frequency is 48 THz, so the present invention can precisely control the fresh position of the EIT by adjusting the resonance (4) and the second _ _ (4) =. The length of 201027161
. 請再參閱「圖16」所示，該第二裂隙環型共振器12A亦 - 可為凹字型環並具一凹口 121A，且該第二裂隙環型共振器12A 插入該容置空間111内’其讓該凹口 121A位於該容置空間in 之内並朝下設置，其同樣可以引發EIT反應。 用價值’且其直接_於晶# 2Q上，因此便於與其他光子或 電子元作作整合，而能滿足實際應用上的需求。 惟上述僅為本發明之較佳實施例而已，並非用來限定本發 如上所述，本發明的結構與方法，其可以在單一的電磁波 施加下以及室溫環境實現類似EIT效應，其僅需要一般的平面 波即可，不需要雷射，同時其產生效應的頻率與結構尺度有 關，亦即可透過結構尺度的改變而任意調控，其不再受限於材 料固有的性質’因而可依據實際的需要加以設計，而擴大其應 2實施之範圍。即凡依本發明申請專利範圍所做的均等變 U飾，皆為本發明專利範圍所涵蓋。 【圖式簡單說明】Referring to FIG. 16 again, the second split ring resonator 12A can also be a concave ring and have a notch 121A, and the second split ring resonator 12A is inserted into the accommodating space. In the 111, 'the recess 121A is located inside the accommodating space in and disposed downward, which can also induce an EIT reaction. The value of 'and its direct _ Yujing # 2Q, so it is easy to integrate with other photons or electronic elements, to meet the needs of practical applications. However, the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the structure and method of the present invention as described above, which can achieve a similar EIT effect under a single electromagnetic wave application and a room temperature environment, which only requires The general plane wave can be, no laser is needed, and the frequency of the effect is related to the structure scale, and can be arbitrarily regulated through the change of the structure scale, which is no longer limited by the inherent properties of the material. Need to be designed, and expand the scope of its implementation. That is, the equivalent U-shaped decoration made according to the scope of the patent application of the present invention is covered by the scope of the invention. [Simple description of the map]
頻率關係圖一。 201027161 * 圖10，本發明調整結構尺度的結構示意圖二。 圖11，本發明結構特定尺度的穿透率-頻率關係圖二。 圖12，本發明調整結構尺度的結構示意圖三。 圖13，本發明結構特定尺度的穿透率-頻率關係圖三。 圖14，本發明結構尺度-頻率的關係圖。 圖15，本發明另一共振結構的穿透率-頻率關係圖。 圖16，本發明另一共振結構的結構示意圖。 【主要元件符號說明】 φ D :間隔距離 10 ·共振結構 • 11:第一裂隙環型共振器 111 :容置空間 12、12A :第二裂隙環型共振器 m、121A :缺口Frequency relationship diagram 1. 201027161 * Figure 10 is a schematic view of the structure of the adjustment structure scale of the present invention. Figure 11 is a graph showing the transmittance-frequency relationship of a particular scale of the structure of the present invention. Fig. 12 is a structural schematic view showing the structure scale of the present invention. Figure 13 is a graph showing the transmittance-frequency relationship of a particular scale of the structure of the present invention. Figure 14 is a graph showing the scale-frequency relationship of the structure of the present invention. Figure 15 is a graph showing the transmittance-frequency relationship of another resonant structure of the present invention. Figure 16 is a schematic view showing the structure of another resonance structure of the present invention. [Description of main component symbols] φ D : separation distance 10 · Resonance structure • 11: First slit ring resonator 111 : accommodating space 12, 12A : second slit ring resonator m, 121A : notch