TW201024071A - Wedge imprint patterning of irregular surface - Google Patents

Abstract

Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some shaping process, typically etching. Portions exposed by the stamp being are removed, and portions that protected by the resist, remain. A typical substrate is silicon, and a typical resist is a wax. Workpiece textures include extended grooves, discrete, spaced apart pits, and combinations and intermediates thereof. Platen or rotary patterning apparatus may be used. Rough and irregular workpiece substrates may be accommodated by extended stamp elements. Resist may be applied first to the workpiece, the stamp, or substantially simultaneously, in discrete locations, or over the entire surface of either. The resist dewets the substrate completely where desired.

Description

201024071 VI. Description of the Invention: [Technical Fields of the Invention] [Prior Art] Certain processing schemes and architectures are disclosed in the Patent Cooperation Treaty Application No. PCT/US2008/002058 entitled "Solar Cells with Textured Surfaces" Application on February 15, 2008, applicants face ιμ·_8, James F·Bredt, MIT, designated state-owned United States, and also claimed to be based on the second US patent provisional application No. 6〇/9〇1,511 ( Priority is filed on February 15th, 2nd, 7th, and 7th, and 11th, 933th (in the 23rd of the year). Both the Patent Cooperation Treaty application and the second US patent provisional application are complete and are hereby incorporated by reference. The technology revealed in these cases is collectively referred to as self-ighed cell (SAC) technology. It is desirable to use an efficient method to pattern the ray wafers with point and line features to define the areas to be etched, while allowing the formation of light-harvesting textures and other surface structures for photovoltaic (ph〇t-(tetra), PV) cells. Shape feature. The thickness of modern (4) solar cells is t_micron' grades. Therefore, the size of the etched features is required to be 20 microns or less to limit the loss of valuable defects due to wafer etching and mechanical fragility. the amount.铿 # 济 济 切割 切割 矽 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有Although the most efficient laboratory PV battery 憎 battery reimbursement using photolithography to make a picture 201024071 case to precisely define the texture and metallization area but the rate, this is cost and quickly It is not used in industry to manufacture batteries. Although it is difficult to use, limited manufacturing uses photolithography = but: in the best case, the cost is still high 4 is required & photochemical f, involving many Process 2 loss. & AA II related calving extremes include: & less spin coating to form the film inherently ~ expense material, focus exposure on the multi-thickness plate, lithography The high capital of projection equipment. Non-photolithographic patterning methods known by thiol include soft lithography and lithography ° '^ lithography involves the use of elastomeric impressions, which have: flat and flat (flat) Features to define micron or nanoscale patterns Early soft lithography involves the deposition of fragile self-assembled monolayers, which have limited ability to be layered and strong, and (iv) chemicals. Subsequent soft lithography involves the hardening of specific polymers in the impression channel by heat or light, which limits the utility of the δ branch and has material cost issues similar to photolithography. Soft lithography is currently not used in industry for manufacturing scale. Nanoimprint lithography is another non-photolithographic patterning technique that involves the use of tools to deform a polymeric film that has a raised and flat feature that is tough relative to the polymeric film. . For Vlsi applications, the ultra-fine features of a size of about 20 nm are locked, and the optical diffraction effect makes photolithography problematic. The use of hard tools limits the technique to conventional polishing substrates, and after embossing, the substrate typically has a thin residual layer on the surface of the embossed area that must be removed by dry etching in a subsequent step under vacuum. except. Although an electronics manufacturing company has demonstrated that nanoimprint 5 201024071 can be used to make high-performance nanoscale microchips, cost and rate limitations may prevent it from being used on large, lower-priced substrates. For example too much from b battery. At the same time, the forces involved (at a scale of 1900 per square inch) may crack the fragile irregular polysilicon wafer. Nanoimprint lithography does not appear to be widely used in industry, and has not seen significant development in other industries. 'Although a wide variety of printing techniques are known to produce patterns for polymer inks, including screen printing, gravure printing, 'lithographic printing', fast drying printing, and some techniques are fast enough for solar cell processing, but This technique is generally limited to feature sizes of 75 to 100 microns or greater, which is too large for: patterned textures. 5 Dynamic extrusion of ink during printing, also known as "dGt gain", limits the quality of these methods at the lower end of the size.矽 sun

The limitations of the above known techniques make them unsuitable for industrial grade patterning of kneading textures on standard energy cells. So I want to use this method, which can slant PV T Pu * m _

SUMMARY OF THE INVENTION J method. Produced for photovoltaics and their substrates. The substrate is fabricated by coating a thin layer of resistive material on the layer.

The innovations disclosed herein include a variety of methods. The patterned base of the utility model has a specific texture. The flexible stamp cover is pressed against the thin layer of resistive material I ❹ ❿ 201024071 to cover the substrate wafer. Under heat and pressure conditions, the resist becomes "vulnerable" when heated and flows away from the lid pressure, revealing certain areas of the substrate wafer to the stamp. The wafer is then cooled as the stamp is positioned, the stamp is removed, and the wafer is subjected to a shaping process, typically an etching process, and the substrate is removed by the portion exposed by the stamp. The portion of the board protected by the resist agent is maintained. A typical substrate is a dream, and a blood type resist is sacrificed. The impression can be used again and again. The stamp is typically made of a flexible material cast into a master mold. The master mode can also be used again. The master mold can be made by first providing a substrate, which can also be made by Shi Xi, and then patterned by conventional photolithography and anisotropic. Therefore, in order to utilize the 'main mold, it is prepared by masking, patterning, and shaping. The master mold is used to make a flexible stamp. The stamp is used to pattern the resist layer on the workpiece, which then accepts different shaping steps to shape the workpiece and can be used for photovoltaic or other purposes. The mold is separated from the discontinuous pits, and the combination thereof. And the middle = then the rotary technology can be used to pattern the workpiece. "The regular workpiece substrate can be used to contact the surface of the workpiece with the shaped part of the stamp. The mold can be used to affect the workpiece by any suitable sigma." The impression is mounted on the flexible film by translation-flat, and the flexible film is translated under the influence of the pressure difference. The square, ",, and over" described here (wedge~ curry (4). At least two kinds of ', wedge-shaped imprinting' methods are also described. Flowable materials can also be provided on the stamp, and can be selected The nip of the square, or only in a specific area of the stamp. 'P-Mold and Substrate 201024071 The innovations disclosed here include methods and articles made by this method. Made for photovoltaics and other The use of a patterned textured soil S-plate with a specific texture is used as a cover for a thin layer of resistive material, and the latter covers the substrate wafer. Under heat and pressure conditions, the resist changes. Phase or soften, and flow away from the position of the lid to reveal the substrate wafer. The wafer then undergoes a shaping process, typically an etching process, in which the portion of the substrate exposed by the stamp is removed and Impedance agent

The portion of the substrate that is protected is accompanied by 保持I. A typical substrate is germanium, and a typical resist is wax. The impression can be used in a field. The stamp is made by casting a flexible material to the master mold. Feng Yushi ^ ^, s chess can also be used again. The master mold can be fabricated by first providing a substrate, and the blood is _ /..., and the δ can also be made of tantalum, which is also coated with a resist layer. The resist layer is formed by photolithography to expose the part of the substrate, for example, by borrowing a chain such as "substrate. The substrate is then subjected to a shaping step, and the body is engraved" to remove certain parts of the substrate. In order to create a main cavity, the main mold is formed. Therefore, in order to utilize, the main mold is borrowed. The main mold is patterned and shaped to form a main wedge for making a printable print. The mode resist layer, which is connected to a ', the gas on the cow is followed by a different shaping step and then can be pure or other (four) pieces. The workpiece includes extended grooves, split cones 、, ,, σ 'Secondary re-price knife is separated from the discontinuous intermediate. You can use the flat ai red wire, several combinations and its rough and irregular workpiece substrate to accumulate the workpiece. Thick... _=::: ::: Component to accommodate, suitable way to affect the workpiece, for example:: 2 = by any thousands of shifts, which can be completed by 201024071 to install the platform for flexible components under the influence of the force difference translation In the end.

A particular aspect preferred by the present invention is a method of imparting a pattern to a substrate comprising the steps of providing a substrate and a deformable P-die having patterned raised features wherein the modulus of the stamp has an elastic modulus of less than about 10 + billion Pa (GPa) At least one region of the space between the substrate and the substrate, providing a material that becomes flowable upon heating to a flow temperature; g-patterning the stamp to contact the substrate and at least 纟 in the flowable material; heating The impression and the substrate are higher than the flow of the material. The combination of the stamp and the substrate is such that the flowable material becomes slidable, and the stamp is removed to reveal the patterned material covering the plurality of regions of the substrate. The crucible includes at least one opening region of the substrate that is not covered by the flowable material I and the patterned substrate is subjected to at least one subsequent processing step. In an important embodiment, the material that becomes flowable may include a wax or a polymer. When the flow temperature is in a flowable state, the favorable adhesive a-band is less than about 100, centipineise; even when the shape-like viscosity can be less than about 1 〇, 〇00 or even Less than about 2, 〇〇〇 centipoise. ^ For a particular aspect of usefulness, the elastic modulus 疋 of the deformable stamp is less than about 十1 billion kPa, and may even be less than about 10 megapascals (MPa). The raised feature may have about 2 and about Height between 20 microns. The deformable stamp can include silicone. Advantageously, the deformable stamp comprises at least two portions, wherein the modulus of elasticity of the first knife is substantially greater than the modulus of elasticity of the second portion. 201024071 The stamp can be used again to impart a pattern to another substrate. - The substrate may comprise single crystal germanium or polycrystalline germanium. The substrate may have a surface characteristic roughness (peak to valley) of between about 55 and about 20 microns. The step of configuring the stamp may include pressing the face of the stamp relative to the patterned raised feature. The step can include applying a pressure between about 100 and about 500 kilopascals (kPa) (calculated based on the substrate area). Alternatively, it may include applying a vacuum to the area between the stamp and the substrate, or applying a relative pressure to the stamp and the substrate and applying a vacuum therebetween. ❹ The stamp is also placed by applying a pressure difference using a flexible film. A second substrate having a second surface to be patterned may be provided, and a second stamp having a second patterned surface may be further provided, which is configured to be pressed against the second substrate by the second flexible film, The two substrates can be patterned substantially simultaneously. The substrate can be flat. In this case, the step of configuring the patterned stamp may include: providing a patterned stamp to rotate about an axis substantially parallel to the plane of the substrate; rotating the patterned stamp about the axis while causing the substrate to be substantially a path perpendicular to the axis of rotation leading to adjacent to the patterned stamp, such that an interface is formed between the stamp and the substrate; and providing an interface of heat adjacent to the rotating stamp and the substrate such that a portion of the interface is higher than The flow temperature of the flowing material is partially lower than the flow temperature. The rotating stamp can be supported and configured, at least in part, by the pressure differential between the two sides of the stamp. The substrate can be narrowed by a pair of rollers, the first of which is subjected to a patterned impression on the periphery and the other is narrowed to the first. The substrate can be continued with 10 201024071. In addition - an important specific aspect is to provide a step that can flow through the heated stamp, which in turn precedes the step of configuring the stamp = first force: the step of hot stamping can precede the step of providing a flowable material, the latter again: The steps to configure the impression. For another embodiment, the step of providing = material follows the step of heating the stamp and arranging the stamp: for a group-specific pattern, the patterning rises into an elongated structure and is cut off. Female

- Section - has a base and a tip where the lateral macro of the tip is smaller than the lateral dimension of the base. Tip features can be in sharp points. The raised feature of Figure 匕 can have a triangular or trapezoidal cross section. The curvature of the tip can be less than the lateral dimension of the substrate. The raised feature may have a base portion and a substantially uniform lateral dimension of the base portion, while the tip portion has: a near base region and a region away from the base, the lateral dimension away from the base region being less than the lateral dimension near the base region . In yet another useful form, the patterned raised features include features having a base and a tip having a length to width ratio in the plan view that is less than about 3 and the lateral dimension of the tip here. Less than the corresponding lateral dimension of the substrate. In at least one respect, the tip can be characterized by a sharp point. The radius of curvature of the tip can be less than the lateral dimension of the substrate. The stamp may comprise a pyramidal pointed protruding element having a pointed, flat or rounded tip. The raised features may include at least one elongated feature and at least one concise feature, the elongated feature being characterized by a length to width ratio of at least about 3 in the plan view and a concise feature characterized by a length of 11 201024071 in the plan view Features having a size ratio of widths of less than about 3 to length may include substantially linear features' and concise features may include pyramids. The p-mode can be generated using the main mode. The form of the main mode has been established by anisotropic engraving. At least a portion of the raised features can be arranged in a hexagonal array which can be symmetrical or asymmetrical. The raised features can include pyramids. Subsequent processing steps may include etching.

In still another embodiment, the subsequent processing step can include undercutting the portion of the substrate material under the patterned material such that the undercut feature of the substrate is greater than the corresponding at least one open region of the patterned material. The etching step may be wet etching, isotropic etching, anisotropic etching, dry etching, reactive ion etching, or deep reactive ion etching. A particularly efficient method embodiment is that the substrate comprises at least two surfaces opposite each other that are simultaneously patterned.

For a particular set of embodiments, the step of providing material includes establishing a material coating on the surface of the substrate. The coating can be between about 1 and about 1 micron thick, which can be applied by spin coating. Alternatively, coating may be selected: supplied by curtain coating 'spray coating, gravure coating, indirect gravure coating, rod coating' roll coating, knife coating or extrusion coating. In yet another set of embodiments, the step of providing material includes establishing a material coating on the surface of the stamp. For basic specific samples, the steps to provide the material include spraying. The material can be mixed with the exploratory Portuguese county and accompanied by the praise of the battlefield. The carrier will then evaporate on 12 201024071. Another set of specific aspects includes space between them. . The material comprising a film of material introduced into the stamp and the substrate can be selectively provided in discrete regions of separation, and at least one region initially does not provide a flowable coffin. The step of heating causes the material to flow to at least one of the initial unprovided materials. The flowable material is optionally provided by printing or dispensing material through a plurality of holes.

馨 I ❿ # # ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( feature. With respect to the basic embodiment, at least one of the open regions has a minimum lateral characteristic dimension of between about 〇 and about 2 microns. It may have a maximum lateral characteristic dimension between about 2 and about 10 microns. The surface configuration can include a light-harvesting texture or a feature that defines a surface conductor to carry light current or both. Many of the techniques and aspects of the present invention are described herein. Those skilled in the art will appreciate that many of these techniques can be used with other disclosed techniques, even if they are not specifically recited for use together. For example, a suitable method of using the stamp on a substrate overlying the resist can be used, where the number 4 will soften or change the phase & hence flow away to reveal the substrate. Impedance / can be wax or other heat flowable material. The impression can be of the platform type, ^turn type or other types. Shaping can be done with an isotropic amount of money, or other forms of engraving if appropriate. If it is not money, another material removal method can be used, which utilizes a phase change mask material, as described after 13 201024071. Additional steps (9) such as "peeling" (ribbed/beating) patterned metal deposits can also be used. The stamp can be made as described or by any other suitable means. If it is not molded or can be made in other ways, it can be discarded rather than reused. The resist agent can be applied to the workpiece substrate as a coating which is spin coated, stamped, sprayed or printed. The resist layer can be provided in any other suitable manner. The resist can be pre-coated on the stamp as previously described, or transferred directly to the space between the stamp and the substrate. 〇About making the master and # , „ , , and his way 'If the stamp is to be molded, the resist layer can be patterned in any suitable way. It can be removed in any suitable way. The material protected by the cover material. The disclosure discloses and discloses more than one invention. Although the invention lists: the patent application scope of the present case and related documents, not only as applied for, the road supervision, the patent of the dog Dinggu During the review period of the application, the inventor intends to claim that all kinds of inventions have reached the previous level: the limit of β is allowed to end as the follow-up is for 砼#娓-h. Each of the inventions is not essential. Therefore, the inventors have ridiculed the scope of any patents described herein that do not claim that any of the patents based on the patents of the present invention are within the scope of 7 (4) Should U be any kind of _ some combination of patent hardware or a group of steps, this is not the right W, 隹 this % is the invention. However, any such combination or group will inevitably be invented, You County County, the soil 4 疋The individual, the cut and the implementation of the benefit of the invention in the case of the 14-201224071 review of the number of inventions, or .. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ This is the case – and a summary is presented. It is emphasized that this summary is provided to meet regulatory requirements, which will allow reviewers and other searchers to quickly identify the subject of technical disclosure. The summary presented is not intended to be interpreted. Or restricting the claims or meanings of the claims, as promised by the provisions of the Patent Office. The following discussion should be understood as illustrative and should not be construed as limiting. Although the invention has referenced its preferences The specific aspects of the present invention are specifically described and described, but those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the scope of the invention. Please specify the structure, materials, actions, all equivalents of the slave function or the function of the step function, such as the specific claims, and combine the components of other claims. Any structure, material or action is included to perform these functions. [Embodiment] U.S. Patent Provisional No. 61/2() No. 1,595, entitled "Wedge Stamping Pattern of Irregular Surface", Missing Year The application on the 12th, 12th day is a priority for the matters disclosed herein, and hereby claims the benefit of the Japanese Patent Application No. 61/2〇1 595, which is hereby incorporated by reference. U.S. Patent Provisional Application No. 6/124,6-8, entitled "Printing Aspects of Self-Calibrating Battery Architecture", filed on April 18, 2008, 15 201024071 on the matters disclosed herein Claims for priority, and hereby claim to be based on the benefits of the temporary application case 帛61/124,6〇8 and for reference. Figures 1 through 12 show the tools used and the workpieces formed at different stages of a typical process. An advantageous process sequence is schematically shown in the grab charts of Figures 13, 14, and 15. Figure 1 3 is about making a master mold. Figure 14 relates to the use of a master mold to make a flexible stamp. ® 15 shows the use of stamps to pattern substrates. The workpiece that will become the master mold to cast the stamp is shown at various stages of the typical process of Figures 1-6. As shown in FIG. i, the thermal oxide layer 1〇2 is grown on the U—0❹ wafer 104. The open rectangular pattern 1〇3 (Fig. 2) is provided 1402 (Fig. 14) to the thermal oxide layer 102 in any suitable manner (e.g., standard photolithography), followed by commercially prepared buffered oxide etching (buffered oxide etching, B0E) is processed to produce an etch mask 1〇5. The mask pattern is typically composed of openings having a width of 5 to 12 micrometers and a spacing of 1 to 25 micrometers. The anisotropic etch 1404 produces a tapered feature 1 〇 8 (Fig. 3) in the 譬 block, such as a trench 1 〇 8 having a dihedral cross section. A hot aqueous solution of KQH is typically used as an etchant' because it etches different crystal orientations at different rates, typically producing sloping sidewalls that form an angle of 54. 7 degrees from the original plane. This technology street is used in the manufacture of Micro Electro Mechanical Systems (MEMS). The 14〇5 patterned thermal oxide mask 105 is then stripped, for example, stripped from the tantalum wafer 1〇4 using BOE (Fig. 4), which is now used to create the pattern of the stamp 11〇 discussed below. The main mode is 1〇6. Referring to the flow chart shown schematically in Figure 15 and with reference to Figure 5, the decane release agent (typically trigas (1H, 1H, 2H, 2H-perfluorooctyl) decane) is 16 201024071 at room temperature, low Vapor deposition 15 〇 2 on the main mold 1 〇 6 under vacuum. Secondly, the castable elastomeric material 1G9, such as PDMS (poly dioxin, also known as silicone) and preferably Dow c〇rning Sy]gard 184, is cast 1504 in the main mold 106' to produce A protruding feature "a having a sloping sidewall that forms a phase repeat of the feature (10) on the lithographic wafer 1 (10). Sylgard products have a hardness of approximately 50 on the (10) A durometer scale and a modulus of elasticity of 2 MPa. Depending on the smoothness of the surface to be patterned, it is possible to use a significantly harder elastomeric material, such as a polyurethane elastomer, which has an elastic modulus of more than about 1 G. For "flat (iv) surfaces, such as conventional: polished enamel substrates, the impression material with a expected modulus rating of 1 〇 billion kPa can be effective. Strip 15 〇 6 prayer materials to form the impression (1) (Fig. 6), i There are prominent features 112' such as ridges extending the triangular cross section. The stamp is used for the steps discussed below to pattern the base y for the solar cell to reuse the master die 1 〇 6 to make another die L. It is noted that the formation process is not integrated into the process of the present invention and may utilize other processes: forming techniques such as injection molding or reactive injection molding, and the elastomers which are available for these molding methods. Similarly, other materials and techniques are used to make the master mold without departing from the scope of the invention as disclosed herein. 110 towel: 14 etched into the 矽 main 胄 106 linear feature 108 is the main implant into the extended triangle The wedge shape 112 of the carrier surface. As shown in Fig. 17~27, the έΛX + m pyramidal opening feature 1108 of the Wang Hao 1106 is caused by the rising wedge characteristic of the 幵^ in the stamp 1110. When etching the system, ', " Undercut, but the known technique typically allows for the creation of internal corners by pre-compensating the initial pattern geometry for the accelerated etch rate generated there by 17 201024071. Although typical relief protrusions (relative to the plane of the substrate) Height) can vary widely, but is preferably in the range of 3 to 10 microns. The process steps for making and using a single pyramidal lift feature are discussed below. The typical procedure for using the stamp 11 开始 begins with application.丨3〇2 heat flowable organic resist material (such as synthetic or natural wax) or a thin layer of heat-flowable polymer (such as polyolefin) 7〇2 (about 丨~5 microns) to the substrate

(Figure 7). For example, the substrate 7〇4 may be a polysilicon wafer material of a wire saw, approximately 200 microns thick, which has accepted an isotropic HN〇3 / Ηρ etchant to remove the crystal structure occurring during the wafer cutting process. Microscopic damage, this process of cutting is a process well known in the dream photovoltaic manufacturing technology. Generally available: The wafer stock prepared herein may have a typical wavy surface configuration of about 2 to about 8 microns peak-to-valley; in contrast, the saw-saw material has a serrated irregular surface. Other substrates are also contemplated by the techniques described herein, including but not limited to single crystal wafer fills for wire saws, conventional polished wafers, and continuous flexible films (including but not limited to thin films). In the case where there is no jagged surface just received, it is possible to etch the P phase. This process has also been shown in the wire saw wafer material that has just received r 邛 has a good pattern fax. A wide variety of soil and arm 7Λ0 ^ α compounds can be used as the resist layer 〇2, including palm wax, peg palm wax, and square october. * Based on palm wax, wax cockroach, micro wax, branched chain polyolefin polymer, temporary deduction of private > + other * L - 疋 prefers a good adhesive property and relatively fracture toughness of the impedance agent. Fight. The preferred formula is Koster

KeUnen StlCk Wax 77, a blend of synthetic beeswax, microwax, rosin, hydrocarbon 18 201024071 resin and additives, available from Bladel in the Netherlands and Koster in Watertown, Connecticut, USA Keunen company. The material has a viscosity of approximately 1200 centipoise at 100 ° C and a specific gravity of approximately 0.957. The resist material preferably exhibits good flow properties at elevated temperatures, including relatively low viscosity, preferably below 1 centipoise, more preferably below 〇(8) centipoise, most preferably 1000 centipoise. The rheology of the resist material is best not to exhibit shear stress, which limits the flow under pressure at a defined space.

move. It can be used in materials with a higher viscosity in the flowable state, although the process time may be longer; materials with lower viscosity (such as paraffin) may also be used' although these materials may be more brittle and produce poor adhesion. . Further discussion of the preferred surface energy properties of the resist material in conjunction with the substrate and stamp is discussed below. The wax can be applied by spin coating at elevated temperatures, such as directing hot air from the heat to the wafer of the conventional spin coater. In the development of the disclosed method herein, a heated spin coater was constructed for this purpose, and it was found that the preferred combination of operating conditions was a ambient air temperature of 22 yc, a helium transfer temperature of HHTC, and a rotation of 6 rpm. The second's film thickness from K〇Ster-K(10)en (four) ranges from about 3 to about 4 microns. Although spin coating is a convenient way to form a uniform film in the laboratory', industrial practice is expected to be applied in a faster and more material efficient manner, such as spraying, curtain coating, gravure (4), indirect Gravure, rod coating, roll coating, knife coating, extrusion coating or other coating techniques known in the art. In the case of using a spray, it is advantageous to dilute the resist material with a suitable solvent to reduce the (four) degrees to 19 201024071

A thinner or more uniform sentence is achieved, and the solvent can be subsequently removed by the squirt. Depending on the deposition method, it may be desirable to have a short addition step after deposition to reflow or consolidate the resist material and to increase the uniformity of the coating. It should also be noted that (iv) the mode of delivery to the stamp-substrate system is not essential for pepper-shaped imprinting techniques. As will be described below, it may be preferred that the resist material is provided as a discontinuous area on the substrate rather than a continuous film. The above techniques all provide the butterfly in the form of a film for pre-application to the wafer, but can also be sprayed or otherwise applied to the stamp, transferred as a free film, laminated from the web to the stamp or substrate, or The form of the entire refining process is provided to the space between the substrate and the stamp (when the excess material is discharged laterally during the imprinting process). The wedge-shaped visor of the wedge imprinting system is provided as an example of a rotating drum form, and this last practice can be particularly advantageous, as discussed elsewhere in this document.

The elastomer stamp uo is brought into contact with the substrate 7 〇 2 coated with the resist agent. Ink can be made of the above various elastomer materials. Silicone (for example, DowC ingSylgard 184) is a reasonable candidate due to its moderate elastic modulus, low surface energy, and high temperature stability. In contrast to the typical flat top feature of a soft lithography stamp, the stamp used in the method has raised features 112 having a triangular cross section. The linear wedge feature 112 of the stamp uo is pressed against the surface 7〇3 of the wax coating 702 on the 13〇4 substrate 704 with a uniform pressure. Although the optimum pressure is related to the temperature and time of the thermal cycle, it is useful to observe a total pressure difference ranging from about 500 kPa (calculated based on substrate size). It has been found that a vacuum is applied between the substrate and the stamp to provide a pressure differential in whole or in part 20

201024071 = titled it: the possibility of capturing less air, although it has not been found that this is a thousand (four) depends on adding about _. _ , , is the lower limit of the range of about 100~500 kPa. It can be turbulent or the celestial t. , in the printing of 7 2 additional pressure to the impression of the stamp relative to the p-mode to form the enveloping area of the enveloping area:: can first apply vacuum to the two sides of the impression, and then to the opposite; - Face ventilation 'to facilitate the capture of air can escape the physical impression of the m material, _ allow (4) (four) (1) compliant substrate 7 〇 4 不 # irregularity 'including grain boundaries, mineral marks, imperfections due to damage etching. Since not only the raised features of the stamp are elastic, but also the overall elasticity, the method disclosed is effective for surfaces up to and including the coarse wheel of the height level of the stamp lift feature, especially if the opening size is somewhat changed. acceptable. The combination 816 (囷8) of the stamp 110 and the substrate 704 is then briefly heated under pressure 1306 (for example by IR lamp or resistance heating) until the wax 7〇2 becomes a flowable temperature and then rapidly cooled 13〇8 ( For example, by forced convection). When the wax melts or becomes flowable, it is partially displaced in the area under the tip 113 of the wedge stamp feature and then solidified to the desired pattern upon cooling. At the tip end 113 of the wedge feature 112, the mechanical balance is locally established between the applied pressure and the elasticity of the elastomeric stamp such that the uniform and repeatable width of the stamp 将会1〇 will elastically deform into close contact with the substrate. The base material of 704. In a preferred embodiment, a Peltier device can be used in both directions to rapidly heat and cool this combination. It has been found that for resistive materials of interest, a temperature of 90 ° C and a time of 10 seconds is typically sufficient to pattern 21 201024071. The substrate even performs a faster cycle. - Although some materials may not exhibit a solid-liquid phase transition in terms of technology 'but may still be effective at room temperature and become effectively flowable at elevated temperatures' characterized by viscosity Less than about 100,000 centipoise. Further, it may be found that a favorable resist material is flowable at normal room temperature but is effectively immobilized at a reduced temperature, and the method described herein can be easily adapted to such a material by lowering the ambient temperature of the process. . The extra pressure applied to the impression will relax the open area, resulting in a wider clearance area, while reducing the pressure will have the opposite effect. Practically found in the case where the stamp is subjected to a long linear wedge-shaped lifting feature, these techniques can be easily and consistently formed in the direction indicated by the double-headed arrow p at a pitch of 2 μm or less at 1 μm or less. The opening, but only the degree of care used to control the number of processes I can be used. As an example of a pyramidal raised feature (e.g., as shown in Figures 22 through 25), a square opening having a side length ranging from about 1 to about 6 microns can be easily formed. The larger opening size of the example of the tapered feature in the isolation corner is presumed to result in a greater localized pressure due to the reduced contact area. In many instances, (iv) 7〇2# will be thick enough to fill the volume defined by the space between the pepper-shaped feature tip 113 and the impression compression plane η5 (Fig. 9); however, in the case of very thin membranes, the butterfly and An empty space 118 may be maintained between the die recessed surfaces 115. In this case, it is possible for the resist material to automatically remove wetting on the surface of the substrate, which may destroy the desired resist pattern. Compared to the nanoimprint patterning method, it is observed that if the surface characteristics of 22 201024071 702 are properly selected, and the viscosity of the wax

The wedge profile is helpful for this process, the substrate 704, the stamp 1 l〇, is also low enough, then the wax 702 months & the situation, thus resulting in a completely preferred result. The impression of the stamp, particularly on a rough substrate, was observed, in part because of the reduced tendency of the resist material to be trapped on the surface of the substrate. The relatively low viscosity and preferred fluid properties of the flowable resist material are also important to eliminate residual film. Once cooled 1 308, the wedge imprint stamp 11 is removed 13 〇 8 from the substrate 7 〇 4 (Fig. 1 ,), leaving a finished pattern 720 which is completely formed in the channel 722 on the substrate 7 , 2, thus A mask combination 724 is formed. The mask assembly 724 can be immediately introduced into the etch bath, deposition chamber, or other processing equipment as needed for a particular microfabrication process. In general, any of the following etching methods can be used to suit the particular process: wet etching, isotropic etching, anisotropic etching, dry-type etching, reactive ion etching, deep reactive ion etching. By way of a specific example, which is shown in FIG. 11, the mask wafer assembly 724 can be etched in a 6:1:1 HN〇3:CH3CO〇H:HF bath for about 1 to 2 minutes to form Corresponding to the aligning groove 826 of the embossed pattern 720 or the pit 1826 (Fig. 26). The m2 wax 702 is then removed to reveal a textured substrate that is subjected to a continuous linear groove 1230 (as shown in Figure 12, with an example of a linear wedge feature on 23 201024071) or a continuous and slightly overlapping substantial semi-spherical An array of pits (10) (as shown in Fig. 27, for example, shows an example of a pyramidal feature 1112 in a stamp of the Sichuan-Yangtze). These structures can be used in photovoltaic applications. The well-known can provide significant benefits for light harvesting and current fabrication of Shixia solar cells. Due to the cost and complexity of existing patterning techniques, processors of polycrystalline V cells are not able to get those benefits. The example given in the previous section encompasses a specific example of a hexagonal array of linear groove textures and hemispherical pits, but can thus produce a wide variety of structures. For example, a medium length junction structure between the elongated and square pyramidal examples can be easily produced, and other arrays other than the hexagonal array can be easily produced. Similarly, extended ridges and discrete discontinuous pyramid arrays can be used in combination. While the above process involves the overall removal of substrate material by a fish-like homogenous surname, the process can be broadly applied to microfabrication and other fields where micro-scale patterns are desired. For example, a film (e.g., metal or dielectric) pre-deposited on the surface of the substrate can be selectively removed by a wide variety of fishing or dry (4) (4) (4) without substantially affecting the substrate material itself. Both derogatory and additive processes are possible. For example, the reactive material 4© can be applied to the surface of the patterned substrate and allowed to selectively diffuse into the open areas of the substrate. Alternatively, pattern metallization may be performed, which is preceded by a thin film of uniform thin film deposited on the patterned wafer prior to directional deposition, and then the cold mask is cooled in the coolant 'thus removing the deposit deposited on the mask Metal, but the temple is a metal deposited by patterned openings. It is contemplated that in the case of wedge imprint patterning, this stripping technique will be limited to relatively thin or discontinuous defects, since preferred stripping implementations involve a resist agent 24 201024071 layer with outstanding features, which is metal An interruption in the membrane is facilitated by solvent attack. Figure 16 shows schematically a solar cell 1640 having a patterned surface 1642 which is formed using a stamp in accordance with steps similar to those shown in Figure 3. The /slot 1626 spans the battery surface from left to right as shown. Bus line 1 644 is parallel to trench 1626. Metallized fingers 1646 intersect the bus line 1644 and are perpendicular to the texture trench 1 626. For a small substrate that is directly occupied by a 25 mm class, a wedge imprint process can be conveniently implemented using a pDMg stamp attached to a rigid platform, as shown in Figures i to 12 and 17-27. The translation is shown vertically. For larger scale processes, such as 78 mm or 156 mm square substrates, maintaining flatness and pressure uniformity between the platform and the wax coated workpiece becomes increasingly challenging. As shown with reference to Figures 28A and 28B, the device 28 i 7 has a PDMS stamp 2810 attached to the flexible rubber film 281 1 such that a uniform pressure P can be pneumatically applied to the waxed 2802 over a relatively large area. Substrate 2804. As noted above, it has also been found to be advantageous to apply a vacuum to the region 2816 between the stamp and the coated substrate during the process to avoid defects due to trapping air. Under the influence of the pressure p in the cavity 2813, the film 2811 is deflected toward the substrate 2804. The protrusion 2812 of the stamp 281A carried by the thin web 2811 is pressed into the wax or other coating 2802 on the substrate 28〇4 under heat and pressure, as described above, so that the resist flows away to expose the substrate. 28〇4, so the substrate can be etched, as described above, to form a textured wafer for photovoltaic applications. Because the process time is almost no more than the time required to heat and cool the stamp and substrate combination 25 201024071 8 1 6', so in addition to the front platform and pocket technology, the above technology is also applicable to the roll processing "Figure 3 〇, the substrate 3004 coated in the rotary specific state '蠛3002 is passed between the roller 3015 of the elastic wedge-shaped stamping die 3010 and the linear preheating element 3〇53, so that the wax 3002 is just introduced. Melting before narrowing, and then flowing 're-solidifying' is substantially as described above, which occurs in the narrowing between the drum 3〇15 and the backup drum 3〇17. The protrusions (e.g., the extended protrusions 3〇12 and the discrete discontinuous protrusions 3013) respectively cause similar impressions 3022, 3023, such as the extended protrusion examples mentioned above and the discrete discontinuities that will be mentioned below. Example of things. Wafer 3024 can therefore be processed at a rate compatible with modern solar cell processing equipment (for a 6 inch (15.24 cm) square wafer with a cycle time of 1-2 seconds). Moreover, the roll technology is not limited to rigid or discontinuous substrates. Continuous web-rolled substrates can also be patterned, provided that a combination of resistive coating techniques, such as spraying or curtain coating, is utilized. It is to be noted that the order of the above operations is not essential to the method. For example, although in the main example, the first pure supply is applied to the substrate, then the stamp is placed to press onto the ant-coated substrate, and finally the combination is heated and cooled, but in the reel process just described The sequence is to first provide the resist material and then heat the 'reconfigure stamp' to press to the base and finally cool. The advance step should pay attention to the example of m (four) spraying on the hot substrate, the sequence becomes heating, the ant's configuration stamp is provided to press the substrate, and the cooling is performed, and the basic features and final results of the method are not changed. Further, the process can be arranged such that the order of at least some areas of the substrate is: the stamp and the heat are arranged in any order, and (4) the resist material is provided. It may be particularly advantageous to have the final practice of 201024071 5W having different faxing requirements in different regions of the desired pattern, as discussed in connection with Figures 35B and 36, for example.

It is also possible to provide a stamp to wrap the drum, for example as shown in Figure 3, while feeding the substrate via narrowing. At the same time, the heat flowable resist material can also be provided for narrowing' such that it is substantially provided to the substrate and patterned by the stamp. Although this is not shown in Figure 30, the resistant may be injected by a nozzle (e.g., as shown in Figure 34) to the upstream of the neck (as shown on the left side of Figure 3A), while the linear preheating element 3053 and the drum 30 1 Between 5 In some cases, it may be advantageous to simultaneously pattern the two sides of the wafer. For example, it is known that a linear groove directed at a 9 degree angle on opposite sides of the wafer is an effective texture for the solar cell to capture light. This innovative approach is particularly well suited for simultaneously patterning the two sides of a wafer. For example, as shown in reference to FIGS. 3 and 3B, the second film 3U()b may be positioned below the wafer 31〇4 and the two thin films 311〇a, 3UOb simultaneously act to implement the wedge. The 3112a 3112b imprint process is on either side of the wafer, 31〇2b. In addition, as can be selected with reference to FIG. 32A and ιβ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ In order to increase the manufacturing cost, the output is provided for the first time. 32A, 32B show that the two films 321a, 3210b are in the same day on each of the two wafers 3204a, 3204b; 隹 γ @ π when entering the early-surface patterning . It is also possible (although not shown) to use three pockets to handle the two sides of the two wafers, which have a total of four sides. This configuration can be extended to any number of wafers and faces required by r. The impression and final texture are likely to have a right shape from π^ to other shapes. Figures 17 to 27 show that

27 201024071 The development stage of the component that becomes the master model, the master mold is used to make the stamp with the single pyramid wedge feature, and the stamp will be used to produce the textured surface with the discrete discontinuous pits. It is roughly hemispherical and can be arranged in a hexagonal closest packed array. The hexagonal array of hemispherical pits forms an extremely efficient light-harvesting structure. Since this process is similar to the above process for extending the linear structure, it will not be described in detail here. However, illustrations are still provided, which are directly analogous to the method diagrams used to describe the extensions, while the numbers below the thousands of reference numbers are similar in numbering, while the thousands digits are different. - Correspondence between the figure numbers between the color 'analog ratios' ^ τγ · — Extended — Separation discontinuous __ 1 _ 2 17 3 18 ________4 19 ...__5^ 20 -____ 6 21 7 22 -___ ________^ 23 - - 1 — .· __ 24 _______\〇25 - ----- 26 - ~~~ 27 '1----- As shown in Figures 17, 18, 19, the production of the main mode 1106 is first

28 201024071 The rectangular (possibly square) aperture 03 is on the resist layer u 〇 2 and the resist layer is over the 1-0-0 wafer 1104 which is anisotropically etched to form a pyramidal depression 1108. The mask 1102 is removed to reveal the main mode J 1〇6 (Fig. 19). The mold is again provided with a molding material 11 〇 9 (Fig. 2 〇) which, as previously described, forms a stamp 111 具 (Fig. 21) having a pyramidal protruding wedge element 1112. The master mold 11〇6 can be used again to form an additional molded stamp.

Wafer 1704 (Fig. 22) is provided to be coated with a wax film 17〇2 as previously described. The stamp 1110 is then brought to influence the wax (Fig. 23) and provides pressure and heat so that the wax flows away from the point under the nib of the pyramidal shaped wedge 1112 (Fig. 24), thereby exposing the pattern of the rectangular opening 1722 underneath. Pa of pa (Fig. 25) (open rectangular opening 1 103). The 1 722 surface area is less than the wax covered by the wax used to make the master mold, and the germanium wafer is etched (Fig. 26), which results in a roughly hemispherical pit 1826 as shown or may be spaced apart. . The pits can overlap, as shown in the figure without overlapping. The general effect is similar to a hive. The wax mask is then removed to have an advantageous light-harvesting capability, such as at 17 〇 2 (Fig. 27) to reveal the ruthenium surface as described in the SAC patent. The resulting array can be symmetrical or asymmetrical. Although the above techniques are mainly 荖 Α π „, the test is based on the manufacture of the extension 722 and the dot 1722 (Fig. 25) in the resist film. However, at least for the Sylgard 1 impression, the polycrystalline wafer, the Stick Wav 77 rt. W x 77 resistive material consists of 'careful control of pressure and contact between the pharyngeal and pharyngeal joints to form a proper width (large 5 to about 20 microns) and helmet damage ^ L ^ ..., residue. Therefore, it is possible to successfully make a tool with a small flat area, such as the flat twisted tip end 29 shown in the figure. The outline feature (characterized by the rise of the (4) base size 29 201024071 at the tip size In the blood-shaped sputum mode, it is beneficial to roughly shrink to the tip. It is stronger and more stable in at least two kinds of structures. The first - ': two, the wedge-shaped structure is naturally more controversial than the columnar knot: one, As the stamp is bonded to the substrate, the tapered form opens f κ *. This allows the wedge embossing process to be effective in the residual area of the resist material to be captured and the nanoimprint embossing The stability of the method, „ „ ^ has a great contrast The latter is usually stored in the residual layer of 4 and must be removed in Desmond (10)H. The difference between the nano-imprinted and the 1st and 1st keys is the wedge-shaped feature, the deformability of the stamp, and the " A claw-acting (rather than just deformable) resist material that allows the resist to remove the substrate. Other techniques for making a wide variety of tapered embossed structures are described below, as shown in Figures 35B and 36. By arranging the time of the anisotropic process 1404, T is made on the single-die 34iQ by combining the wedge-shaped feature 3412 of the missing point and the extended feature 3413 of the trapezoidal section, so that the flat feature is flat. The surface 3415 is coplanar with the peak of the narrower feature 3412. The same result can be achieved by using a wafer on the insulator (slllcon_0n_insulat〇r, s〇I), which is a common structure for semiconductor processing, which is thin Floor

In combination with an oxide layer, the latter is in turn bonded to a thicker tantalum substrate. The surface of the thin layer is patterned and anisotropically etched, and the embedded oxide layer provides a hard etch stop that defines the height of the features and prevents the wide features from being indented deeper than the narrow features. The combination of a dot feature and a line of appropriate width is ideally used to create a solar cell having light-harvesting etch pits that are interrupted by periodic etched trenches that define and limit narrow multiplications. Current-carrying metal fingers that can be produced by self-calibrating photovoltaic fabrication techniques, such as SAC. Such a structure is shown in the Commonly Accepted Patent Cooperation Treaty Application No. PCT/US2009 (not yet serialized), the applicant is

Andrew M. Gabor, Richard L. Wallace, 1366 Technology, titled "The Patterning Method for Diffusion Layers of Solar Cells and Solar Cells Made by This Method", Agent File No. 1366·〇〇14, Same Date Delivery The fast mailing label No. EM355266261US, the entire disclosure of which is hereby incorporated by reference. Making narrow metallized fingers is another key challenge in the manufacture of high efficiency solar cells. In some cases (for example, in a self-calibrating battery, the patterned light-harvesting texture area is interspersed with linear fingers of the current carrying current), and in some areas (in this case, the fingers) the pattern may be more facsimile than others. Areas such as light-harvesting textures are more critical for device efficacy. In this example, as shown with reference to Figures 34, 35 3 3 5 Ε, 3 6 , the resist material 34 〇 2 to the wafer 3404 can advantageously be transferred with a rough pattern 3403 roughly calibrated to the less critical regions. While the resist 34 〇 2 will then flow outward from the deposition area to form the desired pattern, the stamp 3410 will pre-emptively protect selected critical areas without the need to dewet the substrate surface in those areas. The rough pattern can be delivered as a dispensing nozzle as shown, or alternatively a printing technique such as screen (4), fast drying, gravure, pad printing or stencil printing can be used. Again, the rough pattern can be passed to the stamp instead of to the substrate. Any of these selective resist transfer techniques can be combined with any of the other configurations described herein, including platform, pouch, and roll technology. 31 201024071 In an exemplary embodiment, the resist agent is generally provided in three lines that are roughly aligned between those portions of the stamp 3413 that will provide a pattern of conductive fingers. The element M2 which is separated by the interval of the stamp 34〇4 and which is discontinuous will correspond to the light-harvesting pit. The stamp 341() is disposed on a rough deposition line of the rough pattern 3403 of the resist agent. Due to its levitability (shown in an exaggerated manner in Figure 35C), the stamp 341G is curved to conform to the irregular, non-planar surface presented by the combination of resist deposition and the flat surface of the substrate 3404. thin

The elongated flat surface 3415 of the long (four) portion 3413 of G avoids the flow of the resist 3402 to the adjacent elongated portion 3413 when heated. Therefore, as shown in Fig. 35E, the substrate 34A4 is adjacent to a portion of the turns of those positions. Keeping no resisting agent' does not require the resist to be wetted in a later process. At other locations, for example, the substrate corresponds to a point on the stamp 341. The position 3512' of the resist material is pushed away as the point 3412 contacts the surface of the substrate 34〇4, as shown in Fig. 35D. Therefore, these areas must be such that the resist is removed from the fishing industry, which typically occurs. It can be useful to point out that the resistive agent 3402 can flow outwardly through the space between the pointed elements 3412 when heated to its flow temperature. In the case where a very rough substrate is to be patterned, as shown in Fig. 29A, the wedge-shaped embossed features 29i2A having a 54.7 degree sidewall angle may not be sufficiently compliant to ensure consistent value shifting and removal of the fish in the region of the feature tip. In this example, T is used to create a more compliant embossing feature. One possible approach, as shown in the figure, is to create a prismatic foot 2912b having a transverse feature at its tip end. This may be accomplished by applying and patterning a polymer layer on the surface of the finished master mold wafer (Fig. 21) (eg, (5) "claw su_8 negative 32 201024071 photoresist") polymer resist layer The patterned opening corresponds to the shape of the main mold in a size, shape, position, and is recessed, the position is %, and then the impression is cast on the resulting composite geometry. Alternatively, the ion (4) may be additionally applied to the main In-mold directional (four) techniques (such as deep-side sidewall passivation and anisotropic calendar-like straight-wall features, followed by a gated wet etch to form the desired pyramidal tip. Two: two reference B 29D The technique for modifying the performance of the impression is shown schematically, 'it is made from different elastomers 2913 to raise the feature 2, 0

The second 11 mode body 2915. This can be done in the following manner: smear-g) - a layer of tungsten-formable elastomeric material on the surface of the main mold to fill the recessed features 'harden the elastomer so positioned' and then recast a different main castable layer The elastomer is on the initial layer, the mechanical properties of this main layer being different from the initial layer. By this means, it is possible to produce a stamp having a relatively stiff raised feature 2913 and a relatively soft backing 2915, such as to pattern a very small opening on a wavy, uneven substrate. During the embossing, the tendency of the resist material to remove the substrate from the run-down is highly correlated with the chemistry of the stamp, the resist, and the substrate material. A wedge-like tool that is more versatile as described above may be a foot (four)' and a simpler technique may be desired to produce a embossing tool. Or it may be desirable to have a tool with a rounded tip 2912E (Fig. 29E) exhibiting a performance between the sharp tip #2912A and a flat tip (not shown), and may be underexposed and followed by a thick layer of positive photoresist. Manufactured by development. The resulting opening will not completely penetrate the thickness of the photoresist and the deepest portion of the opening will have rounded edges. If the photoresist is subsequently treated with a release agent and used to scale the elastomeric impression, the feature will have the 33 201024071 profile 2912E (Fig. 29E). Certain features of the present technology formed on the wax resist layer 702 (e.g., trenches 722 (Fig. 10)) may be substantially less than the parent features (wedges 112) produced on the stamp 110 by anisotropic etching. This is an additional advantage that allows the use of less expensive low resolution techniques to form the stamp. The techniques described herein are by no means limited to the processing of solar cells. Instead, they can be used in a wide variety of substrates that are intended to be fast, inexpensive to pattern on the micrometer scale and that accept relatively narrow features.

The benefit of using a resist material that exhibits thermal phase change or flow capability is to improve the faxability of fast drying printing. The use of fast-drying printing to pattern large to eight columns of ζυ micrometers requires a significant limitation from the elastomer impression (or called the plate, such as fast-drying printing II)

The term is used to extrude the ink defined by the space between the raised features. In another aspect of the innovation, the heat flowable resist material is transferred to the substrate with an elastomeric impression with a rise and the thermal flow of the material limits the extrusion, thus preserving the impression Feature size. This process is shown in Figure 33. The heated ink metering with microscopic pits 3319... (ox metering r〇ller) 33 i 7 picks up the melting impedance from the reservoir, such as ants (such as K〇ster κ_η The plate 3313 removes excess material and thus accurately measures the volume of the resist for the unit face. Similar types of ink systems are known in the printing industry, although they do not operate at elevated temperatures. The thickness of the transferred film 3321 〒 = approx! to the range of about 5 microns, and for the finest pitch of benefit 4 or slightly lower by 61 microns. The heated squeegee transfer impedance is negative 34 201024071, section 33G2 is formed around the heated cylindrical drum 33i5 The raised portion 3311 of = 3319. The stamps known in the art are typically formed from an acrylic photoelastic, although it is also possible that the Cong 8 stamp advantageously allows the stamp to accept oxygen plasma to modify its wetting behavior. The roller 3315 transfers the melted resist material to the substrate - there is a wrapability' so it follows the undulating change of the substrate surface 332 (). The resist material 3 3 2 1 ; & s, human λα > Needle 321 is in contact with cold The substrate 33〇4, the resist material Mu starts to solidify 'this starts at the substrate surface 332() and progresses toward the stamp surface T of the stamp 3 to properly select the initial/m degrees of the substrate 33〇4 and the fast-drying printing cylinder 3(1). It is easy to control the rate of progress of the solidification front. ▲ The movement of the solidification front can be modeled by solving the Fourier equation, which is a technique known to those skilled in the field of transient heat transfer analysis. At 15 cm per second, the initial wafer temperature is 6 C lower than the resist material refining point, resulting in a film thickness of 1 μm and a solidification time of 75 μs. Increasing the temperature difference to 15. 5. & Gan a 1 9 Other parameters are not The change results in a film thickness of 1.5 microns. The desired thickness is obtained by selecting the speed and the degree of the amount of the resist material suitable for transfer by the ink roller to allow the resist to fill the gap between the raised region of the die and the substrate. The fiber, but not the enamel material is discharged from the gap. The wafer 3304 then leaves the roller 3315, patterning the high-fidelity replica of the die-lifting structure 3311. It is important to note that the substrate side Receiving resist (e.g., 躐) 3321 is at a position that has been brought to the raised portion 33 11 adjacent to the stamp 3319. In contrast, in the specific aspect discussed above, for example, reference 35 201024071 Figure 30, the stamp 3010 and the substrate After the interaction of 3〇〇4, the substrate is not brought to the position 3023, 3022 adjacent to the rising portion 3〇i2' 3〇13 of the stamp 3010, leaving no resist agent 3〇〇2. The raised portion 331 of the specific aspect shown by μ differs from the rising portion 3〇12, B of the specific aspect shown in the figure and other above. © As mentioned earlier, one of the main drawbacks of early displacement-based patterning techniques (such as nano-lithography) was the presence of a film or residual layer on the substrate. The use of a resist material (such as PMMA) requires extremely high pressure (grade per square inch to chest crush) and combines high temperatures to displace the resist material, and there is still film residue that must be removed by dry characterization. . The above specific aspects of the innovation avoid this difficulty by a combination of a low viscosity, heat flowable resist material and a molded soft tool, resulting in the resist material automatically removing the substrate. In addition - the specific aspect avoids the residual layer in different ways' and provides additional benefits in terms of material selection and process monitoring.于此 In this manner, as shown in Fig. 37, the pattern is formed as a depression 37〇2 on the temporary carrier 3719, and is subsequently transferred to the desired substrate 3704. Printing techniques are known to be at a large feature level, typically produced by screen printing or other relatively coarse printing techniques. The pattern of the body is formed on a temporary carrier by microfabrication techniques such as nanoimprint lithography, microtransfer molding, phase change rapid printing or wedge imprinting. The formation of a temporary carrier allows the use of process parameters that are incompatible with the desired polysilicon wafer substrate, such as extremely high pressures. The carrier can be easily released from the pattern forming tool. Before being handed over to the 矽 wafer, 'printing can be optically checked with a machine photographic system 36 201024071

The print is then applied (preferably by roller 3715) to the desired substrate 3704, and then the carrier 3719 is removed leaving the desired resist pattern 3721 on the substrate 3704. In view of the important advantages of the specific aspect of printing, if the resist agent and load

The resist material will adhere to the carrier and thus tear away from the overall resist pattern remaining on the carrier' avoids the major problem of nanoimprint lithography. • The adhesion of the resist to the substrate must be greater than the adhesion of the resist to the carrier. Carrier films having widely varying surface attachment properties are commercially available. While the resist material may be a wax as described above, it is preferably a polymer, such as EVA, which has a gradual phase transition between solid and liquid to facilitate the avoidance of dimensional changes in the substrate. ^ Similar to the other techniques described above, the print transfer technique is easily adapted to the two sides of the patterned wafer at the same time, which is particularly advantageous for light harvesting. Display Manufacturing, Microwave and RF Covering Devices The immediate potential of innovation is the insertion of traditional polycrystalline solar cells, allowing for an increase of approximately 1% in light capture and energy production, with minimal changes to existing processing steps. They also work very well with "SAC" technology. The SAC method utilizes a textured region separated by untextured material that is used to define the extent of the metallized and unmetallized regions by automated or auxiliary capillary flow. The technology also has the potential to be applied more generally to other fields, such as low-cost, high-speed patterning technology that will reduce costs and increase the myriad' including traditional VLSI manufacturing, RFID tags and other printed electronics. 37 201024071 Application.

While specific, θ L 疋 specific aspects have been shown and described, those skilled in the art will appreciate that multi-media recognition & η 4-like changes and modifications can be made without departing from the broadest scope. reveal. All the things contained in the above essays 4 _ one back to the enemy and not in the drawings are intended to be interpreted as illustrative and not limiting. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic perspective view of a body of a crucible, which will be used to form a main mold, and covers a layer of a resist; FIG. 2 is a schematic view of the main body of the main body, which removes a portion of the impedance layer. To form a mask having a linear opening, the opening is substantially rectangular; FIG. 3 is a schematic view of the body of FIG. 1 etched a portion of the body of the cymbal; FIG. 4 is a schematic view of the etched body of FIG. 3, which removes all of a resist layer to form a master mold; Fig. 5 is a schematic view of the master mold of Fig. 4, which feeds a molding material, and Fig. 6 is a schematic view of the master mold of Fig. 4, which peels off the molded molding material to form a stamp Figure 7 is a schematic view of the stamp of Figure 6 taken close to the substrate coated with a resist agent such as wax; Figure 8 is a schematic view of the stamp of Figure 6, which is in contact with the resist layer; Figure 9 is Figure 6. A schematic view of the stamp that contacts the layer of resist and is connected to pressure and pressure so that the layer of resist softens and flows out, such that the impression of the impression touches or almost touches the substrate; Figure 10 is a stamp of Figure 6. Schematic diagram of the mold, which is contacted with the resist layer and is displayed again at 38 201024071, , and pressure, so that the resist layer has flowed out and solidifies the position on the exposed substrate to form a specific pattern; FIG. 11 is a schematic view of the substrate shown in FIG. 1A, which has provided the residual agent and the impedance shown in FIG. 1() The layer pattern contacts the substrate, and part of the substrate has been etched to form a linear channel having a roughly semi-circular cross section; FIG. 11 is a schematic view of the remaining substrate, the resist layer is removed to reveal the channel;

A = 13 is a typical process step to form a textured pattern on the substrate, eight u " IL diagram, which uses the mask and the material flowing during heating; ^Figure is a typical model of the main mold A schematic flow diagram of the process steps, / the master mold will be used to form the stamp, which will be used, for example, as shown in Figure 13 for a schematic flow diagram of several typical process steps for forming a stamp, the stamp It will be used for the process shown, for example, by Π; Figure 16 X, the intention of the textured photovoltaic device, which has been textured using the stamp as described herein; ▲ Figure 17 is the body of Figure 1 Schematically, a portion of the resist layer is removed to form a mask having discrete discontinuous, spaced apart openings that are approximately square; Figure U is a schematic view of the body of the body, which etches portions of the stone body To form a pyramidal depression; 1 FIG. 19 is a schematic view of etching a hard body, which removes all of the resist layer to form a main mold having a pyramidal depression; FIG. 2 is a schematic view of the main mode of FIG. Giving a molding material; 201024071 peeling off a molded mold The material is brought close to the schematic coating coated with the heat map 21 as the main mold of Fig. 19 to form an impression mold having a pyramidal projection. Fig. 22 is a schematic view of the stamp of Fig. 21, a flow resist (e.g., wax) The substrate, Fig. 23 is the millenary return m '% of the stamp of Fig. 22, the graph 'contacts the resist layer; the second is a schematic diagram of the mode, which is in contact with the resist layer h. So that the resist layer softens and flows out of the mold as the protrusion touches or almost touches the substrate; 5 示意图 Figure 22 shows a schematic of the stamp, after contact with the resist layer and then heat and pressure 'so that the resist layer has Flowing out and solidifying, while the exposed substrate forms a spaced apart pattern of discrete patterns of discrete squares

Figure 26 is a schematic view of the substrate shown in Figure 25, which has been provided with a meal engraving agent and left to contact the substrate by the resist layer pattern shown in Figure 25, and a portion of the substrate has been etched to form a pit having a rough circular periphery. The pits may or may not overlap, thereby forming a cusp therebetween; Figure 27 is a schematic view of the etched substrate of Figure 26 with the resist layer removed to reveal the etched pit; Figure 28A is A schematic view of a particular aspect of the device 'which is used to pattern the substrate' while using a relaxed flexible film that is braked by elevated pressure; FIG. 28B is a schematic view of the particular aspect of FIG. 28A, It is in a pressurized state and the stamp is brought to affect the workpiece; Figure 29A is a schematic view of a particular embodiment of the stamp used herein with 40 201024071 angularly tapered, pointed protruding elements; Figure 29B is for A schematic view of a particular embodiment of the stamp herein having a prismatic projecting element with a pyramidal, pointed tip; Figure 29C is a schematic illustration of a particular aspect of the stamp used herein having a pyramid Protruding element Figure 29D is a schematic view of a particular embodiment of a stamp for use herein having a prismatic projecting member having a hardness that is different from the hardness of the base portion; Figure 29E is for printing herein Schematic representation of a particular aspect of the mold having a prismatic projecting element with a rounded tip; Figure 30 is a schematic illustration of a particular aspect of the method using an impression mounted on a rolled element; Figure 31A Is a schematic view of a specific aspect of the device for patterning the two sides of the substrate, using a flexible film in a relaxed state, the film being braked by elevated pressure; Figure 3B is a specific state shown in Figure 31A A schematic view of the second stamp being applied to the workpiece in a pressurized state; FIG. 32A is a schematic view of a specific aspect of the apparatus for patterning a two substrate 'a flexible film using a relaxed state' The film is braked by the elevated pressure; Figure 32B is a schematic view of the particular aspect of Figure 32A, in the pressurized state 'and the second impression is brought to affect the two workpieces; Figure 33 is a specific aspect of the method Schematic The material flowing during heating is transferred to the base 201024071 plate using a flexible stamp mounted on a heated roller; Figure 34 is a schematic view of the wafer providing a turbulent resist material in a rough pattern; ... Figure 35A Figure 34 is a schematic view of the wafer from the end; =: 5B is a schematic view of the wafer not shown in Figure 35A, and the flexible stamp is brought closer to it; Figure 35C is a wafer shown in Figure 35B. Schematic, and the printable tape affects the wafer and the resist agent, which directly contacts the wafer in some places, and directly contacts the resist agent in some other places, and the stamp is curved and compliant; Figure 35D is a schematic view of the wafer shown in Figure 35B, and the flexible stamp presses the wafer and the resist under pressure; in this case, the wafer is directly contacted at an additional location as compared to the case shown in Figure 35C, and The resist has flowed out from the initial rough pattern to an additional position, and the stamp is in a substantially flat-twisted state; Figure 35E is not intended to be wafered, the stamp has been shifted and the resist has flowed. In a different pattern, the pattern has a heavier than the initial coarse wheel Figure 36 is a plan view of the stamp shown in Figures 35B-35D; and Figure 37 is a schematic illustration of a particular aspect of the method of the present invention using a continuous carrier to provide a heat flow in printed form The material is transferred to the substrate. [Main component symbol description] 42

Claims (1)

201024071 VII. Patent application scope: 1: A method for imparting a pattern to a substrate, comprising the following steps: a. providing a substrate and a deformable stamp having a patterned raised feature, wherein the modulus of the stamp is less than 1 〇 billion kPa; b. at least one area of the space between the stamp and the substrate, providing a material that becomes flowable when heated to a flow temperature; field c. arranging a patterned stamp to contact the substrate and the flowable material At least one of the groups; d_heating the stamp and the substrate to a flow temperature above the material; cooling the combination of the stamp and the substrate such that the flowable material becomes non-flowable; f. removing the stamp to reveal the cover substrate a patterning material of the region, the pattern comprising at least one open region of the substrate that is not covered by the flowable material; and 'g- subjecting the patterned substrate to at least one subsequent processing step. 2. The method of claim 1, wherein the material that becomes flowable comprises wax. 3. The method of claim 1, wherein the material that becomes flowable comprises a polymer. 4. The method of claim 1, wherein the flowable material has a viscosity of less than about 1 〇 〇 〇 〇 〇 泊 in the flow/span. 5. The method of claim 1, wherein the flowable material has a viscosity at flow temperature of less than about 1 〇, 〇〇〇 centipoise. 6. The method of claim 1, wherein the material that becomes flowable 43 201024071 has a viscous sound of less than about 2,000 centipoise at the flow temperature. 7. The method of claim 1, wherein the elastic modulus of the deformable stamp is less than about 0.1 billion. 8) The method of claim 1, wherein the deformable stamp has an elastic modulus of less than about 10 megapascals. 9. The method of claim 1, wherein the raised feature has a height of between about 2 and about 20 microns. 10. The method of claim 3, wherein the deformable stamp comprises silicone. 11. The method of claim 1, wherein the deformable stamp comprises at least two portions, wherein the first portion has a modulus of elasticity substantially greater than the modulus of elasticity of the second portion. 12. The method of claim 1, further comprising: removing at least one region of the substrate previously wetted by the material, removing the moisture from the house, removing the moisture, and the area of the house corresponding to the rise of the impression feature. 13. The method of claim </ RTI> further comprising the step of using the stamp again to impart a pattern to the other substrate. 14. The method of claim 帛i, wherein the substrate comprises SB 矽 15· If you apply for a patent scope! The method of the item wherein the substrate comprises a single crystal. 16. The peak-to-valley method of between about 0.5 and about 20 microns as claimed in claim 1 wherein the substrate has a large surface characteristic roughness. 17. The method of claim 1, wherein the substrate has a surface characteristic roughness of Table 44 201024071, which is between about 0.05 and about 1.0 times the height of the patterned raised feature. 1 8. The method of claim </ RTI> wherein the configuration of the lesser body comprises pressing the face of the stamp relative to the raised feature of the pattern. 19. The method of claim 18, wherein the lesser of the pressure comprises: applying a pressure between about 1 Torr and about 5 kPa depending on the area of the substrate. 20. The method of claim 1, wherein the step of configuring comprises applying a vacuum to a region between the stamp and the substrate. 2 1 . The method of claim 1 wherein the stepped spine comprises: applying a pressure to the face of the stamp relative to the raised feature of the pattern and applying a vacuum between the stamp and the substrate. region. 22. The method of claim 3, wherein the step of configuring comprises: activating the flexible film by applying a pressure differential. 23. The method of claim 1, wherein the substrate is substantially flat and the step of configuring the patterned stamp comprises: a. providing a patterned stamp to rotate about an axis parallel to the plane of the substrate; b Rotating the patterned stamp about the axis while causing the substrate to be adjacent to the patterned stamp along a path substantially perpendicular to the axis of rotation such that an interface is formed between the stamp and the substrate; and c. providing heat to the vicinity The interface between the stamp and the substrate is rotated such that a portion of the interface is above the flow temperature of the flowable material and a portion of the interface is below the flow temperature. 45 201024071 24. As for the scope of patent application, part 23 is partly due to the pressure difference between the two sides of the stamp: where the rotary stamp is placed to the left and the knives of the knife. . The method of the twenty-third patent of the patent, i in the patterned stamping die adjacent to the rotation, the substrate is passed through the middle-rolling to provide a pair of rollers, and the f-roller is subjected to a pattern on the periphery thereof. The first stamp of the stamp is formed into a narrowing step, and the step of narrowing between the inlet and the ox, and the two rollers. : a method of at least - substrate passing through a continuous 2 base 6 plate, such as the method of claim 23 (4), wherein the substrate comprises a crucible 27. As in the method of claim i, the step of the material is in the step of heating the stamp f &quot; Before the IL configuration stamp is stepped. The step of the hot stamping is as follows: 28. In the scope of claim 1 of the patent application, before the step of providing the flowable material, the flow is provided:: Second: before the step of configuring the stamp. , v 29. If the scope of the patent application 帛i ^ material is after the step of heating the stamp and configuring the stamp. The method of claim 1, wherein the patterned elevation sign comprises a long structure having a base having a base and a tip H, the lateral dimension of the end being smaller than the lateral dimension of the base. , too 31. The method of claim 30, wherein the substrate is at least one of the materials previously wetted by the material, and the area of the removal of the dragon corresponds to the material of the stamp to remove the turbidity 32. The method of claim 3, wherein the tip feature 46 201024071 lies in a sharp point. 3. The method of claim 30, wherein the patterned raised feature has a triangular cross section. 34. The method of claim 3, wherein the patterned raised feature has a trapezoidal cross section. 35. The method of claim 30, wherein the tip has a curvature&apos; the radius of curvature of the tip is less than the lateral dimension of the substrate. 36. The method of claim 3, wherein the raised feature comprises a tip portion and a substantially uniform lateral dimension of the base portion, the tip portion having a region proximate the substrate and a region remote from the substrate, laterally away from the substrate region The dimension is smaller than the lateral dimension close to the base region. A method of claim 2, wherein the patterned raised feature comprises a feature having a substrate and a tip, wherein the length ratio of the base to the width in the plan view is less than about 3 and the lateral dimension of the tip. Less than the corresponding lateral dimension of the substrate. 38. The method of claim 37, further comprising: removing the wetted material from at least a region of the substrate previously wetted by the material, the wetted region corresponding to the raised feature of the stamp. 39. Aspects 40. Aspects 41. Aspects, such as the method of applying for the scope of patents, in which at least some of the 'tips are characterized by sharp points. /' As in the method of claim 37, wherein at least some of the patterned rising features include a triangular (four) face (iv), as in the method of claim 37, wherein at least some. The feature has a trapezoidal cross section. 47. The method of claim 37, wherein the tip has a curvature&apos; the radius of curvature of the tip is less than the lateral dimension of the substrate. 43. The method of claim 37, wherein the raising feature comprises a tip portion and a substantially uniform lateral dimension of the base portion, the tip portion having a region proximate the substrate and a region remote from the substrate, laterally away from the substrate region The dimension is smaller than the lateral dimension close to the base region. 44. A protruding element having a tapered tip as claimed in the patent application. The method of item 1, wherein the stamp comprises a corner, such as a patent range, ... the hole is included in the substrate, at least the material of the dragon, the material is removed from the wet, and the area to be wetted corresponds to the impression. The rising feature. 46. The method of claim 1, wherein the tapered tip projecting member has a flat tip. 47. If the method of claim 1 is included, the rounded tip is included. Among them, the impression includes a corner in which the feature pack is raised, , , , V~A , and Tanjong opens the special name to the "long feature" and at least the feature, the length feature is characterized by the length to width dimension in the face view. The ratio is at least about 3: The characteristic of the feature is that the ratio of the length to the width in the plan view is: about 3 to 1. τ &gt;rj leather includes features that are substantially linear, while concise features include pyramids. 5. The method of the first item, wherein the impression is produced by the mold, and the form of the main mold and the main mold have been established by anisotropic etching. 48 201024071 5 1. The method of claim </ RTI> wherein at least a portion of the raised features are arranged in a hexagonal array. 52. The method of claim 4, wherein the raised feature comprises a pyramid. 53. The method of claim </ RTI> wherein the subsequent processing steps comprise: narration. 54. The method of claim 53, wherein the subsequent processing steps The turtle includes: undercutting the substrate material from a portion underneath the patterned material such that the undercut feature of the substrate is greater than a corresponding at least open region of the patterned material. 55. The method of claim 53 wherein the etching step is selected from the group consisting of: 触-type lithography, omnidirectional lithography, anisotropy (four) 'dry (four) 'reactive ion _ 'deep reaction Sex ion remnant. 56. The method of claim i, wherein the substrate comprises at least two surfaces that are opposite each other are substantially simultaneously patterned. 57. The method of claim 22, further comprising: a second substrate having a second surface to be patterned, and further scooping: a second stamp having a second surface With the second flexibility case. Thus, the substrate can be substantially simultaneously as shown in Fig. 58. The steps include 59.1 and approximately the method of claim 1 of the patent application: coating the material on the surface of the substrate as in the method of claim 58 of the patent application, 10 micron between. The method of providing a material wherein 0 is coated with a thickness of about 49 201024071. The method of claim 58 wherein the step of establishing a coating comprises: spin coating. 61. The method of claim 58, wherein the step of establishing a coating is selected from the group consisting of: curtain coating, spray coating, gravure coating indirect gravure coating, rod coating, Roll coating, blade coating, extrusion coating. 62. The method of claim </RTI> wherein the step of providing a material comprises: establishing a coating of the material on the surface of the stamp. 63. If the scope of the patent application is included, the steps include: sprinkler irrigation. Method of item 1 64. The method of claim 1, wherein the material comprises a mixture having a volatile carrier which is subsequently evaporated. 65. &gt; A method of applying the scope of the patent, which provides the material of the material comprising: introducing a film of material into the space between the stamp and the substrate. The scope of the current search for the first cow ".........r from the supply of small - including: the material is selectively provided in the discrete areas of separation, The area is initially not provided with the material, and the step of heating enables the flowable material to flow to at least one region of the initially unprovided material. The method of claim 66, wherein the step of selecting, comprises: printing the material. 8. The method of claim 2, wherein the selectively providing step comprises: dispensing material from a plurality of holes. 69. If the scope of the patent application is 丨 其 其 , , , , , , , , , , , 进一步 进一步 进一步 进一步 进一步 进一步 进一步 进一步 进一步 进一步 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王70. The method of claim </ RTI> wherein at least one of the open regions has an approximate minimum lateral characteristic dimension between M and about 2 microns. 71. The method of claim i. 'At least one of the open areas has a maximum lateral characteristic dimension between about 2 and about 10 microns. 72. As in the method of the patent application, the surface of the substrate to be imaged in # has about 〇.5 And a characteristic roughness between about 10 microns. 73. If you apply for a patent scope! The method of claim, wherein the subsequent processing further comprises: generating a surface configuration, and further comprising: processing the substrate to form a photovoltaic cell. 74. The method of claim 73, wherein the surface configuration comprises a light-harvesting texture. 75. The method of claim 73, wherein the surface configuration comprises defining features of the surface conductor for carrying photocurrent. 76. The method of claim 75, wherein the surface configuration comprises a light-harvesting texture. 11 As in the method of claim 1, the material that becomes π $ Λ ,, , 』&quot;IL has a flow temperature of less than about 200. C. 78. The method of claim 1, wherein the flowable material has a flow temperature of less than about 丨〇〇. C. Eight, the pattern: (such as the next page) 51