TW201023394A - Method for packaging LED on glass substrate - Google Patents

Method for packaging LED on glass substrate Download PDF

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Publication number
TW201023394A
TW201023394A TW097147859A TW97147859A TW201023394A TW 201023394 A TW201023394 A TW 201023394A TW 097147859 A TW097147859 A TW 097147859A TW 97147859 A TW97147859 A TW 97147859A TW 201023394 A TW201023394 A TW 201023394A
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Taiwan
Prior art keywords
glass substrate
light
emitting diode
metal film
conductive metal
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TW097147859A
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Chinese (zh)
Inventor
wei-min Guo
Original Assignee
wei-min Guo
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Priority to TW097147859A priority Critical patent/TW201023394A/en
Publication of TW201023394A publication Critical patent/TW201023394A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

A method for packaging LED on glass substrate is disclosed. Mainly, indium tin oxide (ITO) conductive film is applied as the circuit on glass substrate, and one or more LEDs are packaged on the glass substrate directly. A functional area suitable for wire-bonding is made on the ITO conductive film circuit at the appropriate location, and the matching voltage and current required for the LED is set up, so that the protection for the gold wire and the optically-designed lens are created on the glass substrate for constituting a device capable of emitting light all around 360 degrees of view angle.

Description

201023394 九、發明說明: 【發明所屬之技術領域】 » 1 本發明係有關一種在玻璃基板上封裝發光二極體之方法,尤指 一種於玻璃基板上,利用透明之金屬薄膜作為導電介質以及製作 發光二極體打線職之功腿,俾將發光二極體直接封裝於玻璃基 板之方法。 【先前技術】 按;一般所稱之「發光二極體J,係為一種由化合物半導體材料 所構成之發統件’其縣姻轉體晶財的電子與電洞的結合 而發出光子,以產生不同頻率之光譜。亦即,其係由n型半導體晶 體與P型半導體晶體所結合之發光晶4,俾於通電後,該η型半導 體晶體多餘之f子義至ρ型半導體晶體的電洞,藉由電位的差異, 使η型半導體晶體的電子落入p型半導體晶體的電洞過程中釋出能 量,而該釋出能#則以發光方式進行,喊生不同波長的光線。 習知發光—極體的封裝方法,係於發光二極體設有兩個不同電 極的金屬支架,將發光晶片以絕緣方式固設於其中一支架上,再以 金線(或相同導電功能之銘導線),以構成發光晶片之電極與各支架 201023394 之連結,俾於兩支架之間施加電壓時,得以藉由電子與電洞結合放 出能量而產生光。 前述習知之製程.,由於係將發光二極體晶片封裝於支架後焊設 ; 於印刷電路板,再藉由預設之電路點亮不同位置之發光二極體,惟 : 由於支架與印刷電路板係為不透光之材質,因此無法使用於需透光 之物件。申請人有鑑於此,乃秉持從事該項業務多年之經驗,經不 斷研究、實驗,遂萌生改良,祈使發光二極體之封裝,構成一 36〇 ;;) 度視角皆可發光之裝置。 【發明内容】 . 本發明之主要目的,即在提供一種在玻璃基板上封裝發光二極 體之方法,舞於玻璃基板上,利用透明之金屬薄臈作為導電介質, 以及製作發光二極體打線所需之功能區,俾將發光二極體直接封裝 於玻璃基板,以構成一 360度視角皆可發光之裝置。 — 前述之在_基板上職發光二極體之方法,躲玻璃基板 ) 上,以透明之導電金屬薄膜⑽)作為電路,將—個或—個以上之發 光二極體直接封裝於該玻璃基板。其中,該導電金屬薄膜電路係於 適當位置製作適合打線之功能區,且設定發光二極體所需之電壓及 餘之匹配’俾將保護金粗具有絲設計之製作於玻璃基板 上,從而構成一 360度視角皆可發光之裝置。 前述之在玻璃基板上發光二_之綠,胁玻璃基板藏 贼鱗-層導電金屬_,職作轉電層,並_侧或低能 量雷射加工形成所需之電路。 201023394 之方法,係以電鍍技製 前述之在玻璃基板上封裝發光二極體 作發光二極體之打線功能區。 <方法,係將發光二極體 前述之在玻璃基板上封裝發光二極體 晶片固定於金屬薄膜電路,並完成打線之作業。 前述之树璃基板上難發光二極體之麵,係时線或銘線 連接於晶片與功能區。201023394 IX. Description of the invention: [Technical field to which the invention pertains] » 1 The invention relates to a method for encapsulating a light-emitting diode on a glass substrate, in particular to a transparent substrate using a transparent metal film as a conductive medium on a glass substrate The method of illuminating the diodes and the legs of the LEDs, and directly encapsulating the LEDs on the glass substrate. [Prior Art] According to what is commonly referred to as "light-emitting diode J, which is a hair piece made of a compound semiconductor material", a photon is emitted by the combination of electrons and holes in the county Generating spectra of different frequencies. That is, it is an illuminating crystal 4 combined with an n-type semiconductor crystal and a P-type semiconductor crystal. After being energized, the n-type semiconductor crystal is redundant to the p-type semiconductor crystal. The hole, by the difference in potential, causes the electrons of the n-type semiconductor crystal to fall into the hole of the p-type semiconductor crystal to release energy, and the release energy # is performed by illuminating, shouting light of different wavelengths. Knowing the illuminating-polar body packaging method is a metal bracket with two different electrodes in the light-emitting diode, and the light-emitting chip is fixed on one of the brackets in an insulating manner, and then the gold wire (or the same conductive function) The wire) is formed by connecting the electrode of the light-emitting chip to each of the supports 201023394, and when a voltage is applied between the two supports, the light is generated by the combination of electrons and holes to generate light. The above-mentioned conventional process. Because the LED package is mounted on the bracket after soldering; on the printed circuit board, the LEDs in different positions are illuminated by the preset circuit, but: the bracket and the printed circuit board are not transparent. The material of light can not be used for objects that need to be transmitted. In view of this, the applicant has been engaged in the business for many years of experience, and has been continuously researching and experimenting to improve the encapsulation of the light-emitting diode. A device capable of emitting light from a viewing angle. SUMMARY OF THE INVENTION The main object of the present invention is to provide a method for packaging a light-emitting diode on a glass substrate, which is spread on a glass substrate and is transparent. The metal thin crucible is used as a conductive medium, and a functional area required for fabricating a light-emitting diode, and the light-emitting diode is directly packaged on the glass substrate to form a device capable of emitting light at a 360-degree viewing angle. In the method of the above-mentioned light-emitting diode, on the glass substrate, a transparent conductive metal film (10) is used as a circuit, and one or more light-emitting diodes are directly packaged in the glass. a substrate, wherein the conductive metal thin film circuit is formed at a suitable position to form a functional area suitable for wire bonding, and the voltage required for setting the light emitting diode and the remaining matching '俾 will protect the gold thick wire design from being fabricated on the glass substrate, Thus, a device capable of emitting light with a 360-degree viewing angle is formed. The above-mentioned light emitting on the glass substrate is two green, the glass substrate is hidden by a thief scale-layer conductive metal, and the operation layer is turned on, and the side is low-energy laser. The method of forming the required circuit. The method of 201023394 is to use the electroplating technology to encapsulate the light-emitting diode on the glass substrate as the wiring function region of the light-emitting diode. The method is to apply the light-emitting diode described above. The light-emitting diode chip on the glass substrate is fixed on the metal thin film circuit, and the wire bonding operation is completed. The surface of the above-mentioned glass substrate is difficult to emit the diode, and the time line or the inscribed line is connected to the wafer and the functional area.

商述之在玻璃基板上封裝發光二極體之方法,係將環氧樹脂等 適合之封裝材料塗佈於功能區,以達到保護晶片及金線或銘線之效 果’且進而形成聚光或散光之鏡片。 前述之在玻璃基板上封裝發光二極體之方法,係以絕緣膠塗佈. 於玻璃基板上,以構成電路保護層。 【實施方式】 敬請參閱相關之所附圖式’本發明之製程方法,係包含以下之步 驟· 1 .於玻璃基板1濺鍍或絲印一層導電金屬薄膜11,以供作 為導電層(請參閱第一圖及第二圖)。 2·以濕蝕刻或低能量雷射加工’將導電金屬薄膜11圖形化, 形成所需之電路(請參閱第三圖及第四圖)。 3.於導電金屬薄膜11製作一個或一個以上之發光二極體之 固晶打線功能區111及外部電源連接功能區112 (請 參閱第五圖)。 201023394 4.將正、負極於不同側之發光二極體晶片2置於導電金屬薄 膜11之固晶打線_功能區111,並於發光二極體晶片 2,以導電銀膠3固定於玻璃基板1冬導電金屬薄膜11 (請參閱第六圖)。 5 .正、負極於同侧之發光二極體晶片2,則以絕緣膠4固定 於玻璃基板1之導電金屬薄膜11 (請參閲第七圖 〜 6 ·利用電鍍技術製作適合打線之金屬功能區5,且設定發光 二極體晶片2所需之電壓及電流之匹配(請參閱第八圖及 第九圖)。 7 .以金線6(或鋁線)連接發光二極體晶片2電極與金屬功能 區5(請參閱第十圖及第十一圖)。 • 8·將光學鏡片成型所需之模具7框置於玻璃基板1(請參閱第 十一圖及第十三圖)。 9·將封裝材料注入前述之模具7,以形成光學鏡片8 (請參閱 \ _ 第十四圖及第十五圓及第十六圖、第十七圖)。 10·以絕緣膠9塗佈於玻璃基板1上,以形成保護層(請參閱第 十八圖及第十九圖)。 • 1 1 *完成發光二極體晶片2之封裝,構成一 360度視角皆可發光 之裝置(請參閱第二十圖。 【圖式簡單說明】 第一、二圖係本發明之玻璃基板及導電金屬薄膜結構〇 8 201023394 第三、四圖係本發明之導電金屬薄膜圖形化示意圖。 第五圖係本發明之固晶打線功能區示意圖《 第六圖係本發明正、負極於不同側之發光二極體晶片以導電銀 膠固定於玻璃基板示意圖。 第七圖係本發明正、負極於同側之發光二極體晶片以導電銀膠 固定於玻璃基板示意圖。 第八、九圖係本發明之適合打線之金屬功能區示意圖。 第十、十一圖係本發明之發光二極體晶片與電極與金屬功能區 連接不意圖。 第十二、十三圖係本發明之光學鏡片成型模具框置於玻璃基板 示意圖。 第十四、十五圖係本發明之封裝材料注入模具示意圖。 第十六、十七圖係本發明之光學鏡片成型示意圖。 第十八、十九圖係本發明之絕緣膠塗佈於破璃基板示意圖。 第二十圖係本發明之封裝完成示意圖。 【主要元件符號說明】 1·玻璃基板 111.固晶打線功能區 2.發光二極趙晶片 4 ·絕緣膠 6 ·金線(或銘線) 11.導電金屬薄膜 112·外部電源連接功能區 3.導電銀膠 5 ·β屬功能區 7 ·模具 201023394 8·光學鏡片 9 ·絕緣膠The method for encapsulating a light-emitting diode on a glass substrate is to apply a suitable encapsulant such as an epoxy resin to a functional region to achieve the effect of protecting the wafer and the gold wire or the inscribed wire and thereby forming a condensed light or A astigmatic lens. The method for encapsulating a light-emitting diode on a glass substrate is coated with an insulating paste on a glass substrate to form a circuit protection layer. [Embodiment] Please refer to the related drawings. The process method of the present invention includes the following steps: 1. Sputtering or silk-printing a conductive metal film 11 on the glass substrate 1 for use as a conductive layer (see First and second figures). 2. The pattern of the conductive metal film 11 is patterned by wet etching or low energy laser processing to form a desired circuit (see the third and fourth figures). 3. A solid crystal wiring functional region 111 and an external power connection functional region 112 of one or more light emitting diodes are formed on the conductive metal film 11 (see Fig. 5). 201023394 4. The light-emitting diode chip 2 with the positive and negative electrodes on different sides is placed on the solid crystal wire _ functional area 111 of the conductive metal film 11, and is fixed to the glass substrate by the conductive silver paste 3 on the light-emitting diode chip 2. 1 winter conductive metal film 11 (see the sixth figure). 5. The light-emitting diode chip 2 having the positive and negative electrodes on the same side is fixed to the conductive metal film 11 of the glass substrate 1 with the insulating glue 4 (refer to FIG. 7 to 6). The metal function suitable for wire bonding is formed by using electroplating technology. Zone 5, and set the matching of the voltage and current required for the LED chip 2 (please refer to the eighth and ninth diagrams). 7. Connect the LEDs of the LED chip with gold wire 6 (or aluminum wire) And metal function area 5 (please refer to the tenth and eleventh figures). • 8. Place the mold 7 frame required for the optical lens molding on the glass substrate 1 (please refer to the eleventh and thirteenth drawings). 9. Inject the encapsulating material into the aforementioned mold 7 to form the optical lens 8 (please refer to \ _ fourteenth and fifteenth and sixteenth and seventeenth). 10. Apply with insulating rubber 9 A protective layer is formed on the glass substrate 1 (refer to FIG. 18 and FIG. 19). • 1 1 * The package of the light-emitting diode chip 2 is completed to form a device capable of emitting light at a 360-degree viewing angle (please Refer to the twenty-fifth figure. [Simplified description of the drawings] The first and second drawings are the glass substrate and the thin conductive metal of the present invention. Structure 〇8 201023394 The third and fourth figures are schematic diagrams of the conductive metal film of the present invention. The fifth figure is a schematic diagram of the solid crystal wire function area of the present invention. The sixth picture shows the light-emitting diodes of the positive and negative electrodes on different sides of the present invention. The body wafer is fixed on the glass substrate with conductive silver glue. The seventh figure is a schematic diagram of the light-emitting diode chip with the positive and negative electrodes on the same side of the invention being fixed on the glass substrate with conductive silver glue. The eighth and ninth drawings are suitable for the invention. Schematic diagram of the metal functional area of the wire. The tenth and eleventh drawings are not intended to connect the light-emitting diode wafer and the electrode to the metal functional region of the present invention. The twelfth and thirteenth drawings are the optical lens molding die frame of the present invention. Schematic diagram of the glass substrate. The fourteenth and fifteenth drawings are schematic diagrams of the injection molding of the packaging material of the present invention. The sixteenth and seventeenth drawings are schematic diagrams of the optical lens forming of the present invention. The eighteenth and nineteenth drawings are the insulating rubber of the present invention. Schematic diagram of coating on the glass substrate. Fig. 20 is a schematic diagram of the package completion of the present invention. [Description of main components] 1. Glass substrate 111. Solid crystal bonding function area 2 .Light-emitting diode Zhao 4 ·Insulation rubber 6 ·Gold wire (or Ming wire) 11. Conductive metal film 112 ·External power connection function area 3. Conductive silver glue 5 ·β genus area 7 ·Mold 201023394 8·Optical lens 9 ·Insulation adhesive

Claims (1)

201023394 十、申請專利範圍: 1 · 種在坡璃基板上封裝發光二極體之方法,包含以下.之步驟: a ·於破璃基板濺鍍一層導電金屬薄膜,以供作為導電層… b•將導電金屬薄膜圖形化,形成所需之電路; c·於導電金屬薄膜製作一個或一個以上之發光二極體之固晶打 線功能區及外部電源連接功能區; 、 e.將發光二極體晶片置於導電金屬_膜之固晶打線功能區; 」 , f. 製作適合打線之金屬功能區,且設定發光二極體晶片所需之 電壓及電流之匹配; g. 將發光二極體晶片與電極與金屬功能區連接; h. 將光學鏡片成型所需之模具樞置於玻璃基板,並將封裝材料 . 注入前述之模具,以形成光學鏡片。 〆 2 .如申請專利範圍第丄項所述之在玻璃基板上封裝發光二極體之方 法,其中,該導電金屬薄膜係為IT0材質。 3 .如申請專利範圍第1項、所述之在玻璃基板上封裝發光二極體之方 法,其中,該導電金屬薄膜亦可為絲印之透明導電膠材。 4 ·如申請相範圍第1項所述之在玻璃基板上封裝發光二極體之方 法,其中,S亥導電金屬薄媒係以低能量雷射加工將其圖形化。201023394 X. Patent application scope: 1 · A method for encapsulating a light-emitting diode on a glass substrate, comprising the following steps: a. Sputtering a conductive metal film on the glass substrate for use as a conductive layer... b• Graphically forming a conductive metal film to form a desired circuit; c· fabricating one or more solid crystal wiring functional regions of the light emitting diode and an external power connection functional region in the conductive metal film; e. The wafer is placed in a solid crystal wire function region of the conductive metal film; ”, f. fabricating a metal function region suitable for wire bonding, and setting a matching voltage and current required for the light emitting diode chip; g. emitting the diode chip Connecting the electrode to the metal functional area; h. pivoting the mold required for molding the optical lens on the glass substrate, and injecting the packaging material into the aforementioned mold to form an optical lens. The method of encapsulating a light-emitting diode on a glass substrate according to the invention of claim 2, wherein the conductive metal film is made of IT0 material. 3. The method of claim 1, wherein the conductive metal film is a screen printed transparent conductive material. 4. A method of encapsulating a light-emitting diode on a glass substrate as described in claim 1, wherein the S-electroconductive metal thin film is patterned by low-energy laser processing.
TW097147859A 2008-12-09 2008-12-09 Method for packaging LED on glass substrate TW201023394A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462348B (en) * 2011-01-27 2014-11-21 矽品精密工業股份有限公司 Light emitting device and fabrication method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462348B (en) * 2011-01-27 2014-11-21 矽品精密工業股份有限公司 Light emitting device and fabrication method thereof

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