201020038 六 - 發明說明： . 【發明所屬之技術領域】 本發明係關於一插共 筛裝置，特別是關於針對金屬製造之篩的 案，可提升篩之料，且^、〜複數個切配置提出方 之篩裝置。 "過師作業之生產性大幅改善 【先前技術】 有效率地過_球形之粒子的較置之“ 有產業之生產性造成直接影響之』 有效率地過筛接近之觀點來看’ 成為極重要之課題 粒子（例如鲜料球）之方法係 /以在，構成篩襄置之筛的孔形狀，大多為圓形或正方 形。再者，孔之配置大多配置在方眼之位置，或偶而配^ 成位在三角形之頂點，無論何者皆為均等地 稱 ❹所謂之「篩網眼」。 罝破％為 在使用篩網眼時，在篩作業中，係對篩朝上下方向 左右方向及徑向等驅動，錄常地施加振動。該振鱗業 之目的係在粒子接觸於筛之孔後，儘可能使粒子快速地番' 過孔而落下。 、^ 然而，會有粒子因上下之振動在篩之孔的周圍跳動而 無法通過孔之課題。再者，在前後左右之所謂的二維平面 振動中，會有因其速度及加速度造成粒子通過孔之上部的 機會多，而無法有效率地過篩之問題。此外，當篩之孔的 3 321545 201020038 =近習知之正方形或真圓、亦即由最短之孔的圓弧所 =圍時，亦會有粒子以埋人凹陷之方式被㈣ * 塞之問題。 λ μ 粒子通過孔之機料··振動之粒子接近鋪觸孔壁， 且在被捕捉於該孔壁之端部後落下。亦即，粒子欲通過之 孔壁的長度越長’與欲通過之粒子的接觸機會越多，因此 可更容易地通過。因此’在習知之一般的篩網眼中，對於 一面依存於橫方向之力一面在該網眼平面上運動的粒子而 言，難謂有充分之機會可通過孔，而有過篩作業效率不佳 ❹ 之問題。 此外，在過篩會產生粒子跳動之現象之2〇/zm等級以 下的粒子時，雖在對粒子侧施加正壓之同時對被過篩之侧 施加負壓.，藉此設法使過篩作業順暢，但當粒子一旦被捕 捉於孔時，亦會產生因負壓所致之力造成粒子難以從孔分 離等現象’且在習知之篩網眼孔亦會有容易產生孔阻塞且 效率不佳之問題。 ^ 針對上述問題’例如在下述專利文獻1，提案有一種 在將篩之孔的形狀設為長孔而於過篩微粉時使分離效率提 升的微粉分離去除裝置。 此外，在專利文獻2中，為了篩出目標徑&之微小球， 係提案一種將孔之形狀設為長度〇. 9a以下之短邊b、及長 度超過a之長邊c的長方形狀的篩。 同樣地，專利文獻3、4亦提案一種將孔之形狀設為長 孔的篩。 4 321545 201020038 ,(先前技術文獻） (專利文獻） 0 (專利文獻丨）日本特開平06-170160號公報 (專利文獻2)日本特開2006-122826號公報 (專利文獻3)曰本特開平11-347491號公報 (專利文獻4)日本特開平Π-47693號公報 【發明内容】 ❾（發明所欲解決之課題） 然而’在專利文獻1至4中，由於形成在1$之複數個 長孔係相互平行，因此在以至少二維平面振動過筛粒子 時，在任一方之振動方向上分級速度會變慢。 如上所述，在習知之筛中，雖進行了儘可能使粒子快 速地通過孔而落下 '防止薛網眼之孔阻塞等各種研究，但 =有不存在有令過_業成為有效率者之決定性手段之課 ❿本發明係鏟於上述情事而研創者，其主要目的在於提 ，-種可使篩之效率提升且大幅改善過_作業之生產性的 (解決課題之手段） ,第1態樣之發明係一種具有長孔之金屬板的篩，其特 徵為：以使前述長孔在長度方向之延長線上彼此交叉ς方 式設置複數個前述長孔。 力 第2態樣之發明的篩之特徵為：以使前述長孔在長度 方向之延長線上彼此正交之方式設置複數個前述長孔。又 321545 5 201020038 第3態樣之發明的篩之特徵為：將前述長孔之寬度設 為與所分級之球狀的粒子之直徑相等。 第4態樣之發明的篩之特徵為：以使前述篩之表面側 的長孔之寬度比前述篩之背面側的長孔之寬度更寬之方 式，將長孔之剖面設為擂鉢狀，並將前述篩之背面側的長 孔之寬度設為與前述粒子之直徑相等。 第5態樣之發明的篩之特徵為：前述長孔係在長度方 向之延長線上與前述其他長孔之長度方向的中點正交。 第6態樣之發明的篩之特徵為：將前述長孔之角隅部 〇 作成為具有圓弧之形狀。 第7態樣之發明的篩之特徵為：前述金屬板係使用鎳 或錄合金。 . 第8態樣之發明的篩之特徵為：以鎳鍍覆方式將0. 1 /zm至2//Π1之氟碳粒子複合電沉積在前述金屬板之表面。 第9態樣之發明的篩之特徵為：以鎳鍍覆方式將氟碳 粒子複合電沉積在前述長孔之長度方向的兩孔壁，直到厚 q 度達l//m至30//m為止。 第10態樣之發明的篩裝置之特徵為：藉由朝至少平 面2軸方向進行振動之振動手段使第1態樣至第9態樣中 任一態樣記載之篩振動。 第11態樣之發明係一種以第10態樣記載之篩裝置分 級後之複數個銲料球，其特徵為：前述複數個銲料球中之 在表面有損傷之銲料球的存在機率係未達〇. 1%。 第12態樣之發明的銲料球之特徵為：前述複數個銲 6 321545 201020038 .料球+中之在表面有變色之銲料球的存在機率係未達〇· u。 * y 、第13態樣之發明係一種球形粒子之過篩方法，i特 ，為具有：利用第1〇態樣記載之筛装置來過篩球狀之球形 “子的步驟，及藉由前述過篩步驟獲得通過前述長孔後之 前述球形粒子的步驟。 便之 亦即，本發明係以金屬構成網眼狀之筛，設計孔之形 + 、、文σ /、配置，依據孔的排列及振動之動作進行配置， ❹藉此可提升篩之效率，且大幅改善過篩作業之生產性。 具體而言，將篩之孔的形狀作成為長圓或長方形，且 配置成亦包含彎曲之形狀的長孔。再者，以使各個長度方 向之延長線上相互交叉之方式配置該長孔。 (發明之效果） 本發明係以金屬製造篩裝置之板狀的篩，將用以過篩 球狀粒子之孔的形狀作成為長孔形狀，以在長度方向之延 長線上與其他長孔之長度方向交叉之方式設置複數個長 ©孔，因此在對粒子進行分級時，即使在各個振動方向使筛 振動’粒子亦容易通過長孔，且分級速度會變快。因此， 可使篩之作業效率提升。特別是，以在長度方向之延長線 上與其他長孔之長度方向正交之方式設置複數個長孔時， 分級速度會變得更快。 此外’藉由將前述長孔之寬度設為與分級之粒子之直 徑相等或分級之粒子之直徑以上，並使前述長孔在長度方 向之延長線上與其他長孔之長度方向的中點正叉，並將篩 之長孔的角隅部作成為具有圓弧之形狀，即可使篩之作業 7 321545 201020038 效率更為有效率。特別是，藉由將篩之長孔的角隅部作成 為具有圓弧之形狀，亦可獲得以下之附加效果：可防止篩 受到篩裝置之機械性振動而因機械性疲勞產生裂痕而造成 損傷。 - 再者，以電鑄製作前述篩，具體而言，利用鎳或鎳合 金，以鎳鍍覆方式將0. l/im至2/zm之氟碳粒子複合電沉 積在篩的表面，並以鎳鍍覆方式追加地複合電沉積氟碳粒 子，直到厚度從前述長孔之長度方向的兩孔壁厚l//m至 30/zm為止，因此以鎳鍍覆方式複合電沉積Ο.Ι/zm至2//m 之氟碳粒子而從電鑄基板製作例如10# m厚的篩，接著予 以剝離，再以鎳鍍覆方式追加地複合電沉積氟碳粒子，直 到離篩之長孔之長度方向的兩孔壁的厚度為l//m至30/zm 為止，藉由一邊控制一邊進行上述一連串操作，即可控制 長孔之大小，同時確保篩之厚度，且與長孔之面積比相比 較，可充分地確保篩網眼之厚度。再者，以鎳鍍覆方式追 加地複合電沉積氟碳粒子，直到離長孔之長度方向的兩孔 壁的厚度為至30/zm為止，藉此長孔之剖面形狀係在 孔之深度方向中央部會變窄，因此分級之粒子通過長孔時 與孔壁内側的接觸時間成為最小，可使通過時間成為最小 限度，且使蒒之作業效率更為有效率。此外，以錄鑛覆方 式複合電沉積氟碳粒子之方式係可使篩之表面的平滑度良 好，亦具有提升耐磨耗性且大幅延長筛之壽命的效果。 此外，由於藉由振動手段使篩振動，因此在粒子接觸 於篩之孔後，可儘量使粒子快速地通過孔而落下，而可使 201020038 篩之作業效率更有效率。 【實施方式】 以下，依據圖式詳細說明本發明之筛裝置之幾個實施 形態。 第1圖係說明本發明之實施例1之篩裝置的篩之長孔 的配置之說明圖。第2圖係說明本發明之實施例2之篩裝 置的篩之長孔的配置之說明圖。第3圖係說明比較例1之 篩裝置的篩之長孔的配置之說明圖。第4圖係說明比較例 ^之篩裝置的_之長孔的配置之說明圖。帛5圖係說明將 習知之篩的孔配置成正方形且方眼狀之篩網眼的說明圖。 第6圖係將本發明之實施例1或實施例2之_裝置的筛的 長孔往深度方向剖切的剖面圖，係顯示本發明之實施例t 或實施例2之ϋ與長孔之尺寸關係的說明圖。 (實施例1) ❹ 之圖所示’本發明（本實施例Π之縣置的« 球狀粒子^金屬（例如鎳或鎳合金）所製作’並將用以過 長 銲料球2)之孔的形狀_ 孔3之4 + 以在長度方向之延長線上與其他； 孔3之長度方向的中點a正交之 其間隔B料μw八， ' &置複數個長孔3 ’ 倍(例如3 分級之鲜料球2之直徑…倍至£ 倍），且長孔3之長度方向 — 分級之銲料球2之 J係叹疋為所 係設為鱼所八此外，長孔3之寬度ί 所刀級之銲料球2之直徑χ相等。 4外’本實施例1之所分級的銲料球2之直徑X係為 321545 9 201020038 67//m。而且，篩1之厚度T1係為35/zm。 篩1係藉由電鑄所製作，並以鎳鍍覆方式將0.1/zm 至2//m之氟碳粒子複合電沉積在表面達例如10//m之厚 度。再者，如第6圖所示，從篩1之長孔3的長度方向之 孔壁31朝中央部，以鎳鍍覆方式追加地複合電沉積氟碳粒 子，直到厚度達1 // m至30 /z m(較佳為1 // m至20 // m之厚 度）為止，以使其厚度逐漸朝長孔3之深度方向增加，且剖 面觀看時具有大致半圓形之擂鉢型的形狀。 再者，在運轉本發明之具備篩1之篩裝置時，藉由具 有預定頻率及振幅之振動手段使篩1振動，進行銲料球2 之分級，以執行過篩之作業。 藉此，本發明之篩1係藉由將設置之孔作成為上述之 長孔3，即可確保高之開口率，而使過篩之作業效率大幅 提升。再者’由於將配置長孔3之該間隔b設定為所分級 之銲料球2之直徑的3倍而設成適當之開口率，因此可防 止長孔3彼此過度接近密集而造成篩1之弱化，而使篩之 作業效率最適化。再者，以在長度方向之延長線上與其他 長孔3之長度方向的中點a正交之方式設置複數個篩1之 長孔3，藉由上述之長孔3的配置，而使落下速度極為良 好。由於係藉由電鑄控制長孔3之孔徑而製作者，因此將 長孔3之長度方向的孔壁31作成為朝長孔3之深度方向膨 出之剖面觀看呈擂鉢形狀者，長孔3之孔徑係成為銲料球 2—面落下一面通過所需之最小阻力。 (實施例2) 10 321545 201020038 如第2圖所示，本實施例2之篩裝置之篩1之與實施 _例1不同的構成在於：設置於篩1之複數個長孔3係以在 長度方向之延長線上與其他長孔3之長度方向的任意位置 正交之方式設置。 在此依據第6圖詳細說明利用上述實施例丨或實施例 2之篩1的電鑄的製造方法。 以下說明之電鑄係為解決下述之情形者，即提高開孔 ❹率之方法。一般而言只要使孔與孔接近即可，但由於實際 上使接近之長孔3密集且使該隔壁變薄之結果，篩丨之強 度會變低，而不堪使用，因此欲將鄰接之壁（長孔3之孔壁 31)朝深度方向增厚而大幅增大深寬比（深度相對於寬度之 比）’此時，若增大深寬比，則相對地篩i之厚度T1(長孔 3之冰度方向）會變大’使錦之功能受鄉響，而造成鲜料 球2之落下速度變慢或在長孔3之途中阻塞之機會變多的 問題。 © 若以電鑄製作篩1時， ， ψ J•崎，一般而言由於會以超過阻劑之 厚度之方式朝橫向擴展，因此當筛丄朝深度方向生長時， 第1圖所不之長孔3會被填滿。因此，在電禱之步驟中， 於師1之表面進行電鍍而成為2至心m左右（例如1〇^ m)厚的鎳網眼後’從篩 巾1之基板4面剝離該鎳網眼。接著， 如第7圖所示，以巍棘番 錄Μ覆方式追加地將氟碳粒子複合電沉 積在師1之兩表面，葬卜 /JU #此*將長孔3之長度方向的孔壁31 成為朝長孔3之冰度方向膨出之剖面觀看呈擂銖形狀。 時長孔3之孔從係只要將以錄鐘覆方式進行之追加電 321545 201020038 鍍5的厚度t設為2//m以上，即可將長孔3之孔徑控制成 就銲料球2 —面落下一面通過之孔而言的最小阻力。篩1 之厚度T1、追加電鍍之篩1的厚度T2與追加電鍍5之厚 度t係成為T2 = Tl+2t之關係，長孔3之長度方向的孔壁 31之電鍍厚度t係與進行電鍍而使長孔3之直徑D0收縮 達-2t的量相等。 使氟碳粒子進行複合電沉積之鎳鍍覆係使篩1之表面 的平滑度良好，且儘量將銲料球2之落下時的摩擦抑制在 較低程度，因此以光澤鎳較佳。 此時，從長孔3之長度方向的孔壁朝向中央部的複合 電沉積之厚度係只要兩孔壁31合計為1至60//m即可，較 佳為1至40 // m。藉此，财磨耗性亦會提升，且篩1之壽 命會大幅延長。 以下，針對本發明之篩裝置之性能試驗的結果，說明 概略。 <關於作業效率> 在第1圖所示之實施例1、第2圖所示之實施例2、第 3圖所示之比較例1、第4圖所示之比較例2及第5圖所示 之比較例3之間，以粒子（銲料球2)通過蒒1所需之時間、 銲料球2之回收重量及篩1之開孔率為指標進行性能之比 較。 在此，如第1圖至第5圖所示，比較例1或比較例2 與實施例1與實施例2之間的相異點在於長孔3之配置， 比較例1與比較例2之相異點在於長孔3之大小（縱橫比 12 321545 201020038 -率）。在比較例3 t，係使用習知例所代表之配置成正方形 ， 且方眼形之篩1。 此外，在任一實施例或比較例中，篩1之厚度T1為 35’且藉由電锖而以錄合金製作，並將長孔3之長度方 向的孔壁作成為朝長孔3之深度方向膨出的形狀。 ❹ …在實驗中，使用銲料粒子具有㈣之粒子徑分佈的鲜 料球2(具體而言為混合有粒子徑為心㈣上至❿①以 下之直徑的粒子50g、及粒子捏為671_以上至72_ 以下之直控的粒子响的1(%之銲料球2)，以分級π心 以下之鮮料球2為目的，將各個筛1敷設在之不鏽 鋼框架，並掛設在-般之振動型筛裝置，以比較過筛作業 之速度。將其結果顯示在表丨。 〃 ❹ 心t開孔率:系指在縱方向、橫方向分別重複長孔3 =間隔b而設為單位（―邊）時之每—面積（第 圖中以斜線之區域所示的面積）的長孔3之 【表1】 實施例Γ1 ，.一 ·！〜义，/丨而< 研叫 8 分 10 芬 ~~ ^收重量（g) 開 _實施例2 8 分 23 # ^ 一 50.1 18Γ75~~' 12分32秒~^ ^ 50.1 Ϊ8Γ75~~' 比較例2 15 分 21 秒 ~~~ ^Γ~50·1 20 ~ 比較例3 16分训〜 _ 50.2 16 ' ------J _ 50.1 25~ ' —-——1 由表1之結果得知，第1 & . ^ 第1圖之實施例1的篩1的通過 時間最紐，因此通過速度最 π、 入取咴。回收重罝為50. lg或 321545 13 201020038 50. 2g，大致相同。此外，過篩速度係顯示設為長孔3之效 果比依存於開口率更有效地作用。再者，由實施例1與實 施例2之比較得知，長孔3之配置會對過筛速度有微妙之 影響。由比較例1與比較例2之比較得知，長孔3之縱橫 比率會對過篩速度有微妙之影響。此外，得知藉由進行實 施例1或實施例2之長孔3的配置，可使篩之作業效率相 對於比較例1至3中任一者更為提升。 因此，本發明係藉由使用篩裝置之鎳合金的電鑄製作 板狀之篩1，將用以過篩銲料球2之孔的形狀作成為長孔3 〇 之形狀，並且以在長度方向之延長線上與其他長孔3之長 度方向的中點a正交之方式設置複數個長孔3,且將長孔3 之寬度W設為與所分級之銲料球2之直徑相等，並且將長 孔3之長度方向的長度L設為所分級之銲料球2之直徑的 3倍，因此配置長孔3時，可確保高的開口率，並且可使 篩之作業效率更為有效率。特別是，由於將該間隔b設為 所分級之粒子之直徑的3倍，並設為適當之開口率，因此 _ 可防止長孔3彼此過度接近密集而造成篩1之網眼的弱 化，而使篩之作業效率成為最有效率者。 再者，在電鑄步驟中，藉由電鍍將篩1製作在基板4 之上表面至達到10#m之厚度為止，接著予以剝離，再以 鎳鍍覆方式追加地從篩1之兩表面複合電沉積氟碳粒子， 直到離篩1之長孔3之長度方向的兩孔壁31達厚l/zm至 30/zm為止，藉由一邊控制一邊進行上述一連串步驟，即 可控制長孔3之大小，同時確保筛1之厚度T1，且與長孔 14 321545 201020038 . 之面積比相比較，可充分地確保篩網眼之厚度。再者，以 鎳鍍覆方式追加地複合電沉積氟碳粒子，直到離長孔3之 長度方向的兩孔壁31達厚1/zm至30//m為止，藉此長孔 3之剖面形狀係在孔之深度方向會逐漸變窄，因此分級之 粒子通過長孔3時與長孔3之長度方向的孔壁31的接觸時 間成為最小，可使通過時間成為最小限度，使篩1之作業 效率更為有效率。此外，以鎳鍍覆方式複合電沉積氟碳粒 子之方式係可使篩之表面的平滑度良好，亦具有提升耐磨 ® 耗性且大幅延長篩之壽命的效果。 由此，本發明係可提供一種具備能使篩之效率提升且 大幅改善過篩作業之生產性之篩1的篩裝置。 <關於長度L與過篩速度的關係> 接著，在實施例2之長孔3的配置中，使長孔3之長 度方向之長度L變化，並評價長度L對過篩速度之影響。 在該評價中，將實施例2之篩1整體的大小設為直徑 ❹ 50mm之圓盤狀，並將長孔3之寬度W設為300 // m。再者， 分別準備使長孔3之長度方向的長度L相對於該長孔3之 寬度W(與被過篩之銲料球2相同之尺寸）變化為1倍（300 /zm)、2 倍（600 //m)、3 倍（900 //m)、5 倍（1500 /zm)、10 倍（3000 //m)的篩1。此外，就以該等篩1所過篩之銲料球 2而言，準備200萬個直徑300 /ζιη及質量200g者，並將 施加於篩1之表面的壓力設為10g/cm2。 此外，各個篩1之開口率係統一為40%，且將長度L 設為1倍時之篩1係可視為與比較例3之構成相同。 15 321545 201020038 就評價方法而言，在以上述方式準備之各^上搭載 銲料球2,並藉由施加超音波振動使銲料球2在該篩之 表面上搖動。接著，測定全部之銲料球2通過篩丨之長孔 3為止的過篩作業時間，並算出過篩速度。 第8圖係顯示評價長度方向（長邊）之長度£與過篩速 度之關係的結果圖。再者’在第8圖中之過篩速度係以長 孔3之長邊的長度l及長孔3之寬度w為3〇〇⑽之筛卫 的過筛速度為基準（1_)之值（為了方便起見，雖將筛i 之孔顯現為長孔3，但此時為正方形）。 由第8圖所示之評價結果得知，長孔3之長邊越長， 過篩速度越會上昇。而且，藉由將長邊之長以設為寬度 W*之3倍，與長邊之長度匕為i與2倍之情形相比較，過 師速度會大幅地上昇’當超過3倍時，過筛速度之上昇.率 會下降。由以上之結果可以說，因要兼顧篩丨之強度，長 邊之長度L係以2倍以上、未達5倍為佳，以3倍左右為 更佳。 <關於對銲料球2造成之影響〉 接著，就筛1的孔配置與孔形狀對施加過筛後的銲料 球2造成之影響進行評價。 乂在該評價中，利用實施例2之_1及第9圖所示之比 較例4之師i進行比較。此外，就以該等筛i所過筛之鲜 料球2而έ，準備200萬個直徑300 /zm及質量2〇〇g者， 並將施加於篩1之表面的壓力設為l〇g/cm2。 此外，貫施例2之篩1係將整體之大小設為直徑5〇mm 321545 16 201020038 . 之圓盤狀，且將長孔3之長度L設為銲料球2之直徑之3 倍（即900 # m)，將寬度W設為與銲料球2之直徑相同的300 // m。另一方面，比較例4之篩1係與比較例3同樣地，孔 之形狀並非長孔3，而是作成與銲料球2之直徑相同尺寸 之圓形狀。 就評價方法而言，在以上述方式準備之各篩1上搭載 銲料球2，並藉由施加超音波振動使鲜料球2在該筛1之 表面上搖動。接著，在全部之銲料球2通過篩1之長孔3 u後，確認在所過篩之銲料球2整體中具有損傷之銲料球2 的存在機率。 上述存在機率係利用電子顯微鏡（製造商：T0PC0N(股） 型號：ABT-60)，藉由觀察銲料球2之表面狀態而進行評價。 第10圖至第12圖係揭載顯示銲料球‘2之表面狀態之 電子顯微鏡照片。第10圖（A)係藉由篩進行過篩前之銲料 球2的電子顯微鏡照片（倍率：250倍），第10圖（B)係將 ❿第10圖（A)所示之銲料球2局部放大之電子顯微鏡照片（倍 率：500倍）。第11圖（A)係藉由實施例2之篩所過篩之銲 料球2的電子顯微鏡照片（倍率：250倍），第11圖（B)係 將第11圖（A)所示之銲料球2局部放大之電子顯微鏡照片 (倍率：500倍）。第12圖（A)係藉由比較例4之篩所過篩 之銲料球2的電子顯微鏡照片（倍率：250倍），第12圖（B) 係將第12圖（A)所示之銲料球2局部放大之電子顯微鏡照 片（倍率：500倍）。 如第11圖所示得知，由實施例2之篩1所過篩之各 17 321545 201020038 銲料球2的表面係與第10圖所示之過篩前之銲料球2的表 面相比較毫不遜色，且損傷及變色完全不存在。因此，具 有損傷或變色之銲料球2的存在機率係為0%。此外，在該 評價中，「損傷」係指在以倍率為500倍之電子顯微鏡照片 中可辨視之損傷，並不包含在該電子顯微鏡照片中無法辨 視之輕微損傷。「變色」係指在以倍率為500倍之以人的肉 眼能辨別電子顯微鏡照片中之變色，並不包含以人的肉眼 無法辨別之變色。 另一方面，如第12圖所示得知，在以比較例4之篩1 所過篩之銲料球2中，散佈有在表面具有損傷之銲料球2。 因此，在計算具有損傷之銲料球2的個數並調查其存在機 率時，該機率為7%。再者，在以比較例4之篩1所過篩之 銲料球2中，散佈有在表面具有變色之銲料球2。因此， 在計算具有變色之銲料球2的個數並調查其存在機率時， 該機率為3%。 將以上評價結果之彙整顯示在表2。 【表2】 表面損傷 表面變色 實施例2 0°/〇 0°/〇 比較例4 1% 3% <關於表面分析> 接著，針對以實施例2之篩1及比較例4之篩1所過 篩之各銲料球2，進行表面分析（EDS分析）。在該分析中， 係利用能量分散型X線分析裝置（製造商：日本Philips(股） 18 321545 201020038 •型號：EDAX DX-4)。 ，帛13圖係顯示針對藉由實施例2之篩i所過筛之鲜 料球2進行EDS分析之結果的圖。第！4圖係顯示針對藉由201020038 - Description of the Invention: [Technical Field] The present invention relates to a plug-in co-screening device, and more particularly to a case for a metal-made sieve, which can raise the material of the sieve, and a plurality of cut configurations are proposed Square sieve device. "The productivity of the teacher's work has been greatly improved [previous technology] The efficiency of the _spherical particles is relatively high. "There is a direct impact on the productivity of the industry." The important method of the particle (for example, the fresh ball) is that the shape of the hole constituting the sieve is mostly circular or square. Furthermore, the arrangement of the holes is mostly placed at the square eye, or occasionally ^ Positioned at the apex of the triangle, whichever is equal to the so-called "screen". When the mesh size is used, in the screening operation, the screen is driven in the up-and-down direction, the horizontal direction, and the radial direction, and the vibration is constantly applied. The purpose of the vibrating industry is to make the particles fall as quickly as possible after the particles are in contact with the pores of the sieve. , ^ However, there is a problem that the particles cannot jump through the hole due to the vibration of the upper and lower sides vibrating around the hole of the sieve. Further, in the so-called two-dimensional plane vibrations of the front, rear, left and right, there is a possibility that the particles pass through the upper portion of the hole due to their speed and acceleration, and the sieve cannot be efficiently sifted. In addition, when the hole of the sieve 3 321545 201020038 = near the known square or true circle, that is, surrounded by the arc of the shortest hole, there will also be problems with the particles being buried by the depression. The particles of the λ μ particles pass through the hole. The particles of the vibration approach the wall of the contact hole and fall after being caught at the end of the wall of the hole. That is, the longer the length of the wall through which the particles are to pass, the more the chance of contact with the particles to be passed, so that it can pass more easily. Therefore, in the conventional mesh screen, it is difficult to pass through the hole for particles moving on the mesh plane while relying on the force in the lateral direction, and the screening operation is inefficient. ❹ The problem. In addition, when particles having a particle size of 2 〇/zm or less are generated by sieving, a negative pressure is applied to the side of the sieve while a positive pressure is applied to the particle side, thereby attempting to perform the sieving operation. Smooth, but when the particles are trapped in the pores, there is also a phenomenon that the particles are difficult to separate from the pores due to the force caused by the negative pressure. And in the conventional mesh pores, the pores are easily clogged and the efficiency is not good. problem. For the above-mentioned problem, for example, in the following Patent Document 1, there is proposed a fine powder separation and removal apparatus which improves the separation efficiency when the shape of the pores of the sieve is a long hole and the fine powder is sieved. Further, in Patent Document 2, in order to sift out the microspheres of the target diameter &, a shape in which the shape of the hole is a short side b having a length of 〇. 9a or less and a rectangular shape having a length longer than a long side c of a is proposed. screen. Similarly, Patent Documents 3 and 4 also propose a sieve in which the shape of the hole is a long hole. Japanese Patent Application Laid-Open No. Hei. No. 2006-122826 (Patent Document 3) 曰本特开平11 [Patent Document 4] Japanese Laid-Open Patent Publication No. Hei-47693. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, in Patent Documents 1 to 4, a plurality of long holes formed at 1$ are formed. They are parallel to each other, so when the sieve particles are vibrated in at least a two-dimensional plane, the classification speed is slow in either direction of vibration. As described above, in the conventional sieve, although it is carried out as much as possible to allow the particles to fall through the holes as quickly as possible to prevent the hole blocking of the Xue mesh, and the like, but there is no such thing as being effective. Lessons from the decisive means The present invention is a researcher who shovels in the above-mentioned circumstances, and its main purpose is to provide a method for improving the efficiency of the screen and greatly improving the productivity of the work (the means of solving the problem), the first state The invention is a sieve having a metal plate having long holes, characterized in that a plurality of the long holes are provided in such a manner that the long holes intersect each other on an extension line in the longitudinal direction. The screen of the invention according to the second aspect is characterized in that a plurality of the long holes are provided so that the long holes are orthogonal to each other on the extension line in the longitudinal direction. Further, 321545 5 201020038 The sieve of the third aspect of the invention is characterized in that the width of the long hole is set to be equal to the diameter of the classified spherical particles. The sieve according to the fourth aspect of the invention is characterized in that the cross section of the long hole is set to be meandering so that the width of the long hole on the surface side of the sieve is wider than the width of the long hole on the back side of the sieve. The width of the long hole on the back side of the sieve is set to be equal to the diameter of the particles. The sieve of the fifth aspect of the invention is characterized in that the long hole is orthogonal to the midpoint in the longitudinal direction of the other long holes in the longitudinal direction extension line. The sieve of the sixth aspect of the invention is characterized in that the corner portion of the long hole is formed into a shape having a circular arc. The screen of the invention of the seventh aspect is characterized in that the metal sheet is made of nickel or a nickel alloy. The sieve of the invention of the eighth aspect is characterized in that a fluorocarbon particle of 0.1 / zm to 2 / / Π 1 is composite electrodeposited on the surface of the aforementioned metal plate by nickel plating. The sieve of the invention of the ninth aspect is characterized in that the fluorocarbon particles are composite electrodeposited in a nickel plating manner on the walls of the two holes in the length direction of the long hole until the thickness q is from 1/m to 30/m. until. The sieve device according to the tenth aspect of the invention is characterized in that the sieve described in any of the first aspect to the ninth aspect is vibrated by a vibration means for vibrating in at least the plane of the plane of the plane. The invention of the eleventh aspect is a plurality of solder balls which are classified by the sieve device described in the tenth aspect, wherein the existence of the solder balls having damage on the surface of the plurality of solder balls is not reached. . 1%. The solder ball of the invention of the twelfth aspect is characterized in that: the plurality of solders 6 321545 201020038. The existence probability of the solder ball having a discoloration on the surface of the ball + is not 〇·u. * y, the invention of the thirteenth aspect is a method of sieving a spherical particle, i has a step of: sifting a spherical spherical "child" by using a sieve device described in the first aspect, and by the foregoing The sieving step obtains the step of passing the spherical particles after the long holes. In other words, the present invention forms a mesh-like sieve made of metal, and the shape of the hole is designed, and the σ is arranged according to the arrangement of the holes. And the vibration action is arranged, thereby improving the efficiency of the sieve and greatly improving the productivity of the screening operation. Specifically, the shape of the hole of the sieve is made into an oblong or rectangular shape, and is configured to also include a curved shape. Further, the long holes are arranged such that the extension lines of the respective longitudinal directions intersect each other. (Effect of the Invention) The present invention is a plate-shaped sieve made of a metal-made sieve device, which is used for sifting a spherical shape. The shape of the pores of the particles is formed into a long hole shape, and a plurality of long holes are provided so as to intersect the length direction of the other long holes on the extension line in the longitudinal direction. Therefore, even when the particles are classified, even in the respective vibration directions Vibrating the sieve, the particles can easily pass through the long holes, and the classification speed will be faster. Therefore, the working efficiency of the sieve can be improved. In particular, the lengthwise extension line is arranged orthogonally to the length direction of the other long holes. When a plurality of long holes are formed, the classification speed becomes faster. Further, 'by making the width of the long holes equal to or larger than the diameter of the classified particles, and the long holes are in the longitudinal direction Extending the midpoint of the length of the line and other long holes, and making the corners of the long holes of the screen into a circular arc shape, the efficiency of the screen operation is more efficient. Especially By making the corner portion of the long hole of the sieve into a shape having a circular arc, the following additional effects can be obtained: the screen can be prevented from being damaged by the mechanical vibration of the sieve device and the crack due to mechanical fatigue. Further, the foregoing sieve is electroformed, specifically, a nickel or a nickel alloy is used, and a fluorocarbon particle of 0.1/μm to 2/zm is electrodeposited on the surface of the sieve by nickel plating, and nickel is used. Plating The electrodeposited fluorocarbon particles are additionally composited until the thickness of the two holes from the length of the long hole is l//m to 30/zm, so that the composite electrodeposited by nickel plating is Ο.Ι/zm to 2// A fluorocarbon particle of m is used to form, for example, a 10# m thick sieve from an electroformed substrate, and then peeled off, and then additionally electrodeposited fluorocarbon particles by nickel plating until two holes in the longitudinal direction of the long hole of the sieve When the thickness of the wall is from l//m to 30/zm, the length of the long hole can be controlled by controlling the above-mentioned series of operations while controlling, and the thickness of the sieve can be ensured, and the ratio of the area of the long hole can be sufficient. The thickness of the mesh is ensured in the ground. Further, the electrodeposited fluorocarbon particles are additionally composited by nickel plating until the thickness of the two-hole wall in the longitudinal direction of the long hole is 30/zm, thereby Since the cross-sectional shape is narrowed at the center in the depth direction of the hole, the contact time of the classified particles with the inner side of the hole wall through the long hole is minimized, the passage time is minimized, and the work efficiency of the crucible is more efficient. . In addition, the surface of the sieve can be smoothed by the method of recording and depositing the composite electrodeposited fluorocarbon particles, and the effect of improving the wear resistance and greatly extending the life of the sieve is also obtained. Further, since the sieve is vibrated by the vibration means, the particles can be quickly dropped through the holes as soon as the particles come into contact with the holes of the sieve, so that the work efficiency of the 201020038 sieve can be made more efficient. [Embodiment] Hereinafter, several embodiments of the sieve device of the present invention will be described in detail based on the drawings. Fig. 1 is an explanatory view showing the arrangement of the long holes of the sieve of the sieve device of the first embodiment of the present invention. Fig. 2 is an explanatory view showing the arrangement of the long holes of the sieve of the sieve device of the second embodiment of the present invention. Fig. 3 is an explanatory view showing the arrangement of the long holes of the sieve of the sieve device of Comparative Example 1. Fig. 4 is an explanatory view showing the arrangement of the long holes of the sieve device of Comparative Example. Fig. 5 is an explanatory view showing the arrangement of the holes of the conventional sieve into a square and square-eye mesh. Figure 6 is a cross-sectional view showing the long hole of the sieve of the apparatus of the first embodiment or the second embodiment of the present invention in the depth direction, showing the enthalpy and the long hole of the embodiment t or the embodiment 2 of the present invention. An illustration of the dimensional relationship. (Example 1) 本 The figure of the present invention (made of the spherical particles of the present invention (for example, nickel or nickel alloy) of the present invention (which is used to make the solder ball 2) Shape _ hole 3 of 4 + with the extension of the length direction and the other; the midpoint a of the length of the hole 3 is orthogonal to the interval B of material μw eight, ' & set a number of long holes 3 ' times (for example 3 graded fresh ball 2 diameter ... times to £ times), and the length of the long hole 3 - the graded solder ball 2 of the J series sigh is set to be the fish eight, in addition, the width of the long hole 3 ί The diameters of the solder balls 2 of the knife level are equal. 4 Outer The diameter X of the solder ball 2 classified in the present embodiment 1 is 321545 9 201020038 67//m. Moreover, the thickness T1 of the sieve 1 is 35/zm. Sieve 1 is produced by electroforming, and a fluorocarbon particle of 0.1/zm to 2/m is composite electrodeposited on the surface to a thickness of, for example, 10/m in a nickel plating manner. Further, as shown in Fig. 6, the electrodeposited fluorocarbon particles are additionally composited by nickel plating from the hole wall 31 in the longitudinal direction of the long hole 3 of the sieve 1 toward the center portion until the thickness reaches 1 // m. 30 / zm (preferably a thickness of 1 / m to 20 / / m) so that the thickness thereof gradually increases toward the depth of the long hole 3, and has a substantially semicircular shape when viewed in cross section. Further, when the sieve device having the sieve 1 of the present invention is operated, the sieve 1 is vibrated by a vibration means having a predetermined frequency and amplitude, and the solder balls 2 are classified to perform the screening operation. Thereby, the sieve 1 of the present invention can ensure a high aperture ratio by making the provided holes into the above-mentioned long holes 3, and the work efficiency of the screening can be greatly improved. Furthermore, since the interval b in which the long holes 3 are arranged is set to be three times the diameter of the graded solder balls 2, an appropriate aperture ratio is set, so that the long holes 3 are prevented from being excessively close to each other and the screen 1 is weakened. In order to optimize the efficiency of the operation of the sieve. Further, a plurality of long holes 3 of the plurality of screens 1 are provided so as to be orthogonal to the midpoint a in the longitudinal direction of the other long holes 3 on the extension line in the longitudinal direction, and the falling speed is set by the arrangement of the long holes 3 described above. Very good. Since the aperture of the long hole 3 is controlled by electroforming, the hole wall 31 in the longitudinal direction of the long hole 3 is formed into a cross-sectional shape which is bulged in the depth direction of the long hole 3, and the long hole 3 is formed. The aperture is the minimum resistance required to pass the solder ball 2 to the side. (Example 2) 10 321545 201020038 As shown in Fig. 2, the sieve 1 of the sieve apparatus of the second embodiment is different from the embodiment 1 in that a plurality of long holes 3 provided in the sieve 1 are in the length. The extension line of the direction is arranged orthogonally to any position in the longitudinal direction of the other long holes 3. Here, a method of manufacturing the electroforming using the sieve of the above embodiment or the embodiment 2 will be described in detail based on Fig. 6. The electroforming system described below is a method for solving the case where the opening ratio is increased. Generally, as long as the hole is close to the hole, since the hole 3 is close to be dense and the partition wall is thinned, the strength of the sieve is lowered and it is unusable, so the adjacent wall is desired. (the hole wall 31 of the long hole 3) is thickened in the depth direction to greatly increase the aspect ratio (ratio of depth to width). At this time, if the aspect ratio is increased, the thickness T1 (long) of the sieve i is relatively long. The direction of the ice of the hole 3 will become larger. The function of the brocade is affected by the sound of the town, and the chance of the falling speed of the fresh ball 2 is slowed down or the chance of blocking in the long hole 3 is increased. © When making sieve 1 by electroforming, ψ J•崎, in general, expands laterally beyond the thickness of the resist, so when the sieve grows in the depth direction, Figure 1 is not long. Hole 3 will be filled. Therefore, in the step of electric prayer, after electroplating on the surface of the teacher 1 to become a nickel mesh having a thickness of about 2 to about m (for example, 1 μm), the nickel mesh is peeled off from the substrate 4 side of the sieve towel 1. . Next, as shown in Fig. 7, the fluorocarbon particles are additionally electrodeposited on the two surfaces of the division 1 by the 巍 巍 Μ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , 31 is a cross-sectional view that bulges toward the ice of the long hole 3. The hole length of the hole 3 is as long as the thickness t of the additional electrode 321545 201020038 plated by the clock cover method is set to 2//m or more, and the aperture control of the long hole 3 can be made to achieve the solder ball 2 surface drop. The minimum resistance through the hole. The thickness T1 of the sieve 1, the thickness T2 of the additional plating 1 and the thickness t of the additional plating 5 are T2 = Tl + 2t, and the plating thickness t of the hole wall 31 in the longitudinal direction of the long hole 3 is performed by plating. The diameter D0 of the long holes 3 is shrunk by an amount equal to -2t. The nickel plating which performs the composite electrodeposition of the fluorocarbon particles is such that the smoothness of the surface of the sieve 1 is good, and the friction when the solder balls 2 are dropped as much as possible is suppressed to a low level. Therefore, the gloss nickel is preferable. At this time, the thickness of the composite electrodeposition from the hole wall toward the center portion in the longitudinal direction of the long hole 3 is as long as the two-hole wall 31 is 1 to 60/m in total, preferably 1 to 40 // m. As a result, the fuel consumption will also increase, and the life of the sieve 1 will be greatly extended. Hereinafter, the results of the performance test of the sieve device of the present invention will be described. <Working efficiency> Comparative examples 2 and 5 shown in the first embodiment and the second embodiment shown in Fig. 1 and the first and fourth figures shown in Fig. 1 Between Comparative Example 3 shown in the figure, the performance of the particles (solder balls 2) required to pass the crucible 1, the recovered weight of the solder balls 2, and the opening ratio of the sieve 1 were compared. Here, as shown in FIGS. 1 to 5, the difference between Comparative Example 1 or Comparative Example 2 and Example 1 and Example 2 lies in the arrangement of the long holes 3, and Comparative Example 1 and Comparative Example 2 The difference is the size of the long hole 3 (aspect ratio 12 321545 201020038 - rate). In Comparative Example 3 t, a square 1 and square-shaped sieve 1 represented by a conventional example was used. Further, in any of the embodiments or the comparative examples, the thickness T1 of the sieve 1 is 35' and is made of a recording alloy by electric sputum, and the wall of the long hole 3 in the longitudinal direction is formed toward the depth of the long hole 3. The shape of the bulge. ❹ In the experiment, a fresh ball 2 having a particle diameter distribution of (4) was used (specifically, 50 g of particles having a diameter of a core (4) to a diameter of ❿1 or less, and a particle pinch of 671 Å or more were used. 72_ The following direct-controlled particle ringing 1 (% solder ball 2), for the purpose of classifying the fresh balls 2 below the π heart, the respective sieves 1 are laid on the stainless steel frame and hung in the general vibration type. The sieve device is used to compare the speed of the screening operation. The result is shown in the table. 〃 ❹ Heart t opening ratio: repeats the long hole 3 = interval b in the longitudinal direction and the horizontal direction and is set as the unit (― ) Each time - the area (the area shown by the area of the slanted line in the figure) of the long hole 3 [Table 1] Example ,1, .1·!~义, /丨和&;; Research 8 points 10 fen ~~^收重量(g) 开_Example 2 8 points 23 # ^一50.1 18Γ75~~' 12 minutes 32 seconds~^ ^ 50.1 Ϊ8Γ75~~' Comparative example 2 15 minutes 21 seconds~~~ ^Γ~50 · 1 20 ~ Comparative Example 3 16 Training ~ _ 50.2 16 ' ------J _ 50.1 25~ ' —-——1 From the results of Table 1, the first & . ^ Figure 1 The pass of the sieve 1 of the embodiment 1 The time is the most new, so the speed is the most π, the intake is 咴. The recovery weight is 50. lg or 321545 13 201020038 50. 2g, which is about the same. In addition, the sifting speed shows that the effect of setting the long hole 3 is more dependent on the opening. The ratio is more effective. Further, from the comparison between Example 1 and Example 2, the arrangement of the long holes 3 has a subtle influence on the sieving speed. It is known from the comparison between Comparative Example 1 and Comparative Example 2 that The aspect ratio of the long hole 3 has a subtle effect on the sieving speed. Further, it is understood that the operation efficiency of the sifter can be made relatively in comparison with the comparative examples 1 to 3 by performing the arrangement of the long holes 3 of the embodiment 1 or the embodiment 2. Therefore, in the present invention, the plate-like sieve 1 is electroformed by electroforming using a nickel alloy of a sieve device, and the shape of the hole for sieving the solder ball 2 is made into a long hole 3 a plurality of long holes 3 are formed in a shape orthogonal to the midpoint a in the longitudinal direction of the other long holes 3, and the width W of the long holes 3 is set to the graded solder ball 2 The diameters are equal, and the length L of the long hole 3 in the longitudinal direction is set to be classified The diameter of the ball 2 is three times, so that when the long hole 3 is disposed, a high aperture ratio can be ensured, and the operation efficiency of the sieve can be made more efficient. In particular, since the interval b is set as the classified particles 3 times the diameter and set the appropriate aperture ratio, so _ can prevent the long holes 3 from being too close to each other and weaken the mesh of the screen 1, making the operation efficiency of the screen the most efficient. In the electroforming step, the sieve 1 is formed on the upper surface of the substrate 4 by electroplating until it reaches a thickness of 10 #m, and then peeled off, and then additionally electrodeposited fluorocarbon from both surfaces of the sieve 1 by nickel plating. The particles are controlled until the length of the two holes 31 in the longitudinal direction of the long hole 3 of the sieve 1 is from 1/zm to 30/zm, and the length of the long hole 3 can be controlled while controlling the above-described series of steps while ensuring The thickness T1 of the sieve 1 is sufficient to ensure the thickness of the mesh eye as compared with the area ratio of the long holes 14 321545 201020038 . Further, the electrodeposited fluorocarbon particles are additionally composited by nickel plating until the thickness of the two-hole wall 31 in the longitudinal direction of the long hole 3 reaches 1/zm to 30/m, whereby the cross-sectional shape of the long hole 3 Since the depth of the hole is gradually narrowed, the contact time between the classified particles passing through the long hole 3 and the hole wall 31 in the longitudinal direction of the long hole 3 is minimized, and the passage time is minimized, so that the operation of the sieve 1 is minimized. Efficiency is more efficient. In addition, the method of composite electrodepositing fluorocarbon particles by nickel plating can improve the smoothness of the surface of the screen, and also has the effect of improving wear resistance and greatly extending the life of the screen. Thus, the present invention can provide a sieve device having a sieve 1 which can improve the efficiency of the sieve and greatly improve the productivity of the screening operation. <Relationship between length L and sieving speed> Next, in the arrangement of the long holes 3 of the second embodiment, the length L of the long hole 3 in the longitudinal direction was changed, and the influence of the length L on the sieving speed was evaluated. In this evaluation, the size of the entire sieve 1 of Example 2 was set to a disk shape having a diameter of ❹50 mm, and the width W of the long hole 3 was set to 300 // m. Further, it is prepared to change the length L of the long hole 3 in the longitudinal direction with respect to the width W of the long hole 3 (the same size as the sieved solder ball 2) to be 1 (300 / zm), 2 times ( 600 //m), 3x (900 //m), 5x (1500 /zm), 10x (3000 //m) sieve 1. Further, in the case of the solder balls 2 sieved by the sieves 1, 2 million diameters of 300 / inch and 200 g were prepared, and the pressure applied to the surface of the sieve 1 was set to 10 g/cm2. Further, the opening ratio system 1 of each of the sieves 1 was 40%, and the sieve 1 in which the length L was set to 1 time was regarded as the same as that of Comparative Example 3. 15 321545 201020038 In terms of the evaluation method, the solder balls 2 are mounted on each of the above-described manners, and the solder balls 2 are shaken on the surface of the sieve by applying ultrasonic vibration. Next, the sieving time of all the solder balls 2 passing through the long holes 3 of the sieve was measured, and the sieving speed was calculated. Fig. 8 is a graph showing the results of evaluating the relationship between the length of the longitudinal direction (long side) and the screening speed. Furthermore, the sieving speed in Fig. 8 is based on the length l of the long side of the long hole 3 and the width w of the long hole 3 being the sifting speed of the sieve of 3 〇〇 (10) as the reference (1_) ( For the sake of convenience, although the hole of the sieve i appears as the long hole 3, it is square at this time. As is apparent from the evaluation results shown in Fig. 8, the longer the long side of the long hole 3, the higher the screening speed. Moreover, by setting the length of the long side to be three times the width W*, compared with the case where the length of the long side is i and 2 times, the speed of the teacher will rise sharply 'when more than 3 times, As the screen speed increases, the rate will drop. From the above results, it can be said that the length L of the long side is preferably 2 times or more and less than 5 times, more preferably about 3 times, because the strength of the sieve is to be considered. <About the influence on the solder ball 2> Next, the influence of the hole arrangement of the sieve 1 and the shape of the hole on the solder ball 2 after the application of the sieve was evaluated. In this evaluation, comparison was made using the example i of Example 2 and the example i of Example 4 shown in Fig. 9. In addition, the fresh balls 2 screened by the sieves i are used to prepare 2 million diameters of 300 /zm and mass 2〇〇g, and the pressure applied to the surface of the sieve 1 is set to l〇g. /cm2. Further, the sieve 1 of the second embodiment has a whole disk size of 5 mm mm 321545 16 201020038 . and the length L of the long hole 3 is set to 3 times the diameter of the solder ball 2 (that is, 900). #m), the width W is set to be the same as the diameter of the solder ball 2 of 300 // m. On the other hand, in the sieve 1 of Comparative Example 4, similarly to Comparative Example 3, the shape of the pores was not a long hole 3 but a circular shape having the same size as the diameter of the solder ball 2. In the evaluation method, the solder balls 2 are mounted on the respective sieves 1 prepared in the above manner, and the fresh balls 2 are shaken on the surface of the sieve 1 by applying ultrasonic vibration. Next, after all the solder balls 2 have passed through the long holes 3 u of the screen 1, it is confirmed that the solder balls 2 having damage to the entire solder balls 2 that have been screened have a chance of being damaged. The above-mentioned existence probability was evaluated by observing the surface state of the solder ball 2 using an electron microscope (manufacturer: T0PC0N (stock) model: ABT-60). Fig. 10 to Fig. 12 show electron micrographs showing the surface state of the solder ball '2. Fig. 10(A) is an electron micrograph (magnification: 250 times) of the solder ball 2 before being sieved by a sieve, and Fig. 10 (B) is a solder ball 2 shown in Fig. 10(A) Partially magnified electron micrograph (magnification: 500 times). Fig. 11(A) is an electron micrograph (magnification: 250 times) of the solder ball 2 sieved by the sieve of Example 2, and Fig. 11(B) shows the solder shown in Fig. 11(A) Electron micrograph of a partial enlargement of the sphere 2 (magnification: 500 times). Fig. 12(A) is an electron micrograph (magnification: 250 times) of the solder ball 2 sieved by the sieve of Comparative Example 4, and Fig. 12(B) shows the solder shown in Fig. 12(A) Electron micrograph of a partial enlargement of the sphere 2 (magnification: 500 times). As shown in Fig. 11, it is known that the surface of each of the 17 321545 201020038 solder balls 2 screened by the sieve 1 of the embodiment 2 is compared with the surface of the solder ball 2 before the screening shown in Fig. 10. Inferior, and damage and discoloration are completely absent. Therefore, the existence probability of the solder ball 2 having damage or discoloration is 0%. Further, in this evaluation, "injury" means a damage that can be discerned in an electron microscope photograph at a magnification of 500, and does not include a slight damage that cannot be discerned in the electron micrograph. "Discoloration" means that the discoloration in an electron micrograph can be discerned by a human eye at a magnification of 500 times, and does not include discoloration which is indistinguishable to the human eye. On the other hand, as shown in Fig. 12, it was found that in the solder ball 2 sieved by the sieve 1 of Comparative Example 4, the solder balls 2 having damage on the surface were scattered. Therefore, when the number of damaged solder balls 2 is counted and the probability of existence is investigated, the probability is 7%. Further, in the solder ball 2 sieved by the sieve 1 of Comparative Example 4, the solder balls 2 having discoloration on the surface were scattered. Therefore, when the number of the solder balls 2 having the color change is calculated and the probability of existence is investigated, the probability is 3%. The summary of the above evaluation results is shown in Table 2. [Table 2] Surface damage surface discoloration Example 2 0°/〇0°/〇Comparative Example 4 1% 3% <About surface analysis> Next, the sieve 1 of Example 1 and Comparative Example 4 was used. Each of the solder balls 2 that were sieved was subjected to surface analysis (EDS analysis). In this analysis, an energy dispersive X-ray analysis apparatus (manufacturer: Philips, Japan) 18 321545 201020038 • Model: EDAX DX-4 was used. The Fig. 13 shows a graph showing the results of EDS analysis on the fresh ball 2 sieved by the sieve i of Example 2. The first! 4 graphics display for
啸例4之篩1所過_之具有變色之録料球2進行EDS分 析之結果的圖D #如第13圖及第14圖所示，與以實施例2之筛丄所過 ϋ之鲜料球2的表面進行比較，在以比較例4之_!所過 © ;之銲料球2中，在能量較弱之輕元素側可看出碳或氧之 4值。由此可確認出以比較例4 所過_之銲料球2 會因氧化而變色。 (變形例） 以上，詳細說明本發明之幾個實施例，但本發明並不 ^於上述實施例。此外，本發明係只要不脫料請專利 耗圍所記載之事項，可進行各種之變更設計。 ©隨振明之筛裝置之長孔的形狀係由於篩-邊伴 邊乍業而形成，因此較佳為如在第15圖（a)所示 $角隅部具㈣弧，俾不會在，之作業帽粒子造成損 至I。此外’使長孔之短邊整體具有圓弧亦有效 。由於筛受 :1上下之機械性振動而最後會因機械性疲勞產生裂痕等， 口此藉由在長孔施以圓弧，亦可防止角隅部受到損傷。此 如第15圖（b)所示，對於長孔之長度方向之邊不需要 作成直線，若為帶圓弧之形狀（鐮刀形狀），反而依情況在 面積之考量上較為理想。 關於長孔之見度，即便設為分級之粒子的直徑以上， 321545 19 201020038 亦可具備本發明之效果。 再者，本發明之篩裝置 圖⑹至（Ο㈣之切長孔减即使為第15 形狀(第15圖⑷)、回飛 15圖(C))、平行四邊形 狀(第15圖⑴)，亦可=形狀(第15圖⑷)、梯形形 效果，可作成使筛之效率實施=得=本發明的 產性的篩，仿衅 可大幅改善過篩作業之生 高的良好結果Γ期韻得在考量面積時料業之效率 此外，在實施例1 5 9 庐τ盔邮X 至2中，係說明篩1之長孔3的長 又為斤分級之粒子之直徑的q^ y 2之直徑大2倍、仏、5:倍之情形’㈣比銲料球 / 5倍、6倍等，亦可適用本發明。 L之複數個長孔3係說明以長度方向之延長 、’’ 4正交之方式設置之情形，本發 至少長度方向之延長線上彼此交又之方式設置。 再者就篩1之振動手段而言，亦可使篩丨朝上下方 向左右方向及控向等振動，但只要使之朝至少平面2軸 方向振動，亦可採用包含以例如手動所進行之振動的任何 手段。 再者，已說明以實施例2之篩j所過筛之鮮料球2中 之在表面具有損傷或變色之銲料球2的存在機率為〇%之情 形准各存在機率若為至少未達〇. 1%之存在機率，即可視 為適用本發明而分級之銲料球2。 此外，篩1之複數個長孔3之全部無須在長度方向之 I長線上彼此交叉，例如亦可在篩丨設置複數個區塊（區 321545 20 201020038 域）’在各區塊内配置複數個彼此平行之長孔3，將某一方 ，之區塊内之長孔3及另一方之區塊内之長孔3設置成在長 度方向之延長線上彼此正交。 例如’利用第16圖及第17圖具體地說明。第16圖 (A)係顯示設置在區塊内之長孔之配置的一例之圖，第 圖（B)係顯示設置在區塊内之長孔之配置的另一例之圖，第 16圖（C)係顯示設置在區塊内之長孔之配置的又一例之 ❹圖。第17圖（A)至（C)係顯示區塊彼此之配置之一例的圖。 首先，如第16圖（A)至（C)所示，在區塊bl内配置複 數個彼此平行之長孔3。該區塊BL内之長孔3之長度方向 的長度L係互不相同，且長孔3之長度方向的長度丄與長 孔3之寬度W的比率亦可任意設定。此外，長孔3之配置 亦可適用第16圖（A)及（C)之規則性者，或適用第16圖 之不規則性者。 再者’在篩1設置複數個該區塊BL，例如第17圖（八） ❹所示’某-方之區塊内之長孔3及另一方之區塊内之長孔 3係以在長度方向之延長線上彼此正交之方式配置各區塊 BL。此外，例如第17圖（幻所示，某一方之區塊虬内之長 孔3及另一方之區塊乩内之長孔3亦可以在長度方向之延 長線上彼此交叉之方式配置各區塊BL，亦可將該交叉角度 任意設定。再者，如第17圖⑹所示，在筛！中亦可將ς 區塊BL配置成放射狀，亦可在該放射狀之中心配置區塊 乩。此外’區塊BL本身之大小及形狀亦未特別限定。 (產業上之可利用性） 321545 21 201020038 亦可’並未限定於鲜料球之分級’ w 球、模擬球及間隔件用 用間隔件粒子#之各 * 明珠液阳 古兮八㈣痒各種粒子、物體之分級用的篩，藉由提 作業效率提升。因此，有助於被分級之 或物體之成本降低，其效果極大。特別是，該效果對 於以銲料球為首之球形粒子之分級用途最為有效。 【圖式簡單說明】 第1圖係說明本發明之實施例1之篩之長孔的配置之 說明圖。 第2圖係說明本發明之實施例2之筛之長孔的配置之 說明圖。 第3圖係說明比較例1之筛裝置的篩之長孔的配置之 說明圖。· 第4圖係說明比較例2之筛裝置的薛之長孔的配置之 說明圖。 第5圖係說明將習知之篩的孔配置成正方形且方眼狀 之篩網眼的說明圖。 第6圖係將本發明之實施例丨或實施例2之篩的長孔 往深度方向剖切的剖面圓。 第7圖係顯示本發明之實施例1或實施例2之篩與長 孔之尺寸關係的說明圖。 第8圖係顯示評價長度方向（長邊）之長度[與過|幸速 度之關係的結果之圖。 第9圖係說明比較例4之篩裝置的篩之長孔的配置之 321545 22 201020038 . 說明圖。 第10圖（A)係藉由篩進行過篩前之銲料球的電子顯微 鏡照片（倍率：250倍），第10圖（B)係將第10圖（A)所示 之銲料球局部放大之電子顯微鏡照片（倍率：500倍）。 第11圖（A)係藉由實施例2之篩所過篩之銲料球的電 子顯微鏡照片（倍率：250倍），第11圖（B)係將第11圖（A) 所示之銲料球局部放大之電子顯微鏡照片（倍率：500倍）。 第12圖（A)係藉由比較例4之篩所過篩之銲料球的電 ®子顯微鏡照片（倍率：250倍），第12圖（B)係將第12圖（A) 所示之銲料球局部放大之電子顯微鏡照片（倍率：500倍）。 第13圖係顯示針對藉由實施例2之篩所過篩之銲料 球進行EDS分析之結果的圖。 •第14圖係顯示針對藉由比較例4之篩所過篩之具有 變色之銲料球進行EDS分析之結果的圖。 第15圖係例示本發明之篩裝置之篩的長孔之形狀之 © 變形的說明圖，（a)為角隅部具有圓弧之長孔形狀，（b)為 鐮刀形狀，（c)為十字型形狀，（d)為平行四邊形形狀，（e) 為回飛棒型形狀，（f)為梯形形狀之長孔的說明圖。 第16圖（A)係顯示設置在區塊内之長孔之配置的一例 之圖，第16圖（B)係顯示設置在區塊内之長孔之配置的另 一例之圖，第16圖（C)係顯示設置在區塊内之長孔之配置 的又一例之圖。 第17圖（A)至（C)係顯示區塊彼此之配置之一例的圖。 【主要元件符號說明】 23 321545 201020038Figure D of the result of EDS analysis of the recording ball 2 having the discoloration of the sieve 1 of the whispering example 4, as shown in Figs. 13 and 14, and the sifting with the sieve of the embodiment 2 The surface of the ball 2 was compared, and in the solder ball 2 of Comparative Example 4, the carbon value of carbon or oxygen was observed on the light element side of the weaker energy. From this, it was confirmed that the solder ball 2 which was subjected to Comparative Example 4 was discolored by oxidation. (Modifications) Although several embodiments of the present invention have been described in detail above, the present invention is not limited to the above embodiments. Further, the present invention can be modified in various ways as long as the contents described in the patent are not removed. © The shape of the long hole of the sieve device with the vibration is formed by the screen-side edge. Therefore, it is preferable to use the arc of the corner (4) as shown in Fig. 15(a). The work cap particles cause damage to I. In addition, it is also effective to make the short side of the long hole have an arc. Since the screen is subjected to mechanical vibrations of up and down, and finally cracks are caused by mechanical fatigue, the corners can be prevented from being damaged by applying an arc to the long holes. As shown in Fig. 15(b), it is not necessary to make a straight line for the side of the long hole in the longitudinal direction, and if it has a circular arc shape (the shape of the file), it is preferable in terms of area. Regarding the visibility of the long holes, even if the diameter of the particles to be classified is equal to or greater than the diameter of the particles to be classified, 321545 19 201020038 may have the effects of the present invention. Furthermore, in the sieve device of the present invention, the length of the cut hole of (6) to (4) is reduced even if it is the 15th shape (Fig. 15 (4)), the flyback 15 (C), and the parallelogram (Fig. 15 (1)). Can be = shape (Fig. 15 (4)), trapezoidal effect, can be made to achieve the efficiency of the sieve = get = the production of the screen of the invention, the imitation can greatly improve the high results of the screening operation, the rhyme In addition, in the case of the embodiment, the efficiency of the length of the long hole 3 of the sieve 1 is the diameter of the q^ y 2 of the diameter of the particles of the pound size. The case of 2 times larger, 仏, 5: times '(4) than the solder ball / 5 times, 6 times, etc., can also be applied to the present invention. The plurality of long holes 3 of L are described as being extended in the longitudinal direction and ‘4 orthogonally arranged, and the extension lines of at least the longitudinal direction of the present invention are disposed in a mutually overlapping manner. Further, in the vibration means of the sieve 1, the sieve may be vibrated in the up-and-down direction in the up-and-down direction and in the steering direction. However, if it is vibrated in at least the two-axis direction of the plane, vibration including, for example, manual operation may be employed. Any means. Furthermore, it has been explained that the existence probability of the solder balls 2 having damage or discoloration on the surface of the fresh balls 2 screened by the sieve j of the embodiment 2 is 〇%, and the probability of existence is at least less than 〇. The probability of existence of 1% can be regarded as the solder ball 2 classified by the present invention. In addition, all of the plurality of long holes 3 of the screen 1 do not need to cross each other on the long line of the length direction. For example, a plurality of blocks (area 321545 20 201020038 domain) may be disposed in the screen ' 'configure a plurality of blocks in each block The long holes 3 parallel to each other are arranged such that the long holes 3 in one block, and the long holes 3 in the other block are orthogonal to each other on the extension line in the longitudinal direction. For example, it will be specifically described using Figs. 16 and 17. Fig. 16(A) is a view showing an example of the arrangement of the long holes provided in the block, and Fig. (B) is a view showing another example of the arrangement of the long holes provided in the block, Fig. 16 (Fig. 16) C) shows a further example of the arrangement of the long holes provided in the block. Fig. 17 (A) to (C) are diagrams showing an example of arrangement of blocks. First, as shown in Fig. 16 (A) to (C), a plurality of long holes 3 which are parallel to each other are arranged in the block b1. The length L of the long holes 3 in the block BL in the longitudinal direction is different from each other, and the ratio of the length 丄 of the long holes 3 in the longitudinal direction to the width W of the long holes 3 can be arbitrarily set. Further, the arrangement of the long holes 3 can also be applied to the regularity of Fig. 16 (A) and (C), or the irregularity of Fig. 16 can be applied. Furthermore, 'a plurality of the blocks BL are arranged in the sieve 1, for example, the long holes 3 in the block of the 'some-square' and the long holes 3 in the block of the other side shown in Fig. 17 (8) Each block BL is disposed such that the extension lines in the longitudinal direction are orthogonal to each other. Further, for example, in the seventeenth figure (the magic hole, the long hole 3 in the block of one side and the long hole 3 in the block of the other side may be arranged so as to intersect each other on the extension line in the longitudinal direction. In addition, as shown in Fig. 17 (6), the ς block BL may be arranged radially, or the block may be arranged at the center of the radial 乩. In addition, the size and shape of the block BL itself are not particularly limited. (Industrial availability) 321545 21 201020038 It is also 'not limited to the classification of fresh balls' w for balls, simulated balls and spacers. Each of the spacer particles # 明 液 液 明 明 ( ( 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明 明In particular, this effect is most effective for grading the spherical particles including the solder ball. [Simplified Schematic Description] Fig. 1 is an explanatory view showing the arrangement of the long holes of the sieve of the first embodiment of the present invention. Describes Embodiment 2 of the present invention. FIG. 3 is an explanatory view showing the arrangement of the long holes of the sieve of the sieve device of Comparative Example 1. FIG. 4 is a view showing the arrangement of the long hole of the sieve of the sieve device of Comparative Example 2. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 5 is an explanatory view for arranging holes of a conventional sieve into a square and square-eye mesh. Fig. 6 is a view showing a long hole of the embodiment of the present invention or the sieve of the second embodiment. Fig. 7 is an explanatory view showing the relationship between the size of the sieve and the long hole of the embodiment 1 or the embodiment 2 of the present invention. Fig. 8 shows the length of the evaluation length direction (long side) [ Fig. 9 is a view showing the arrangement of the long holes of the sieve of the sieve device of Comparative Example 4, 321545 22 201020038. Fig. 10 (A) was carried out by sieve Electron micrograph of the solder ball before the screen (magnification: 250 times), Fig. 10 (B) is an electron micrograph of the solder ball shown in Fig. 10 (A) (magnification: 500 times). Figure (A) is an electron micrograph of a solder ball sieved by the sieve of Example 2 (times : Fig. 11 (B) is an electron micrograph (magnification: 500 times) of a partial enlargement of the solder ball shown in Fig. 11 (A). Fig. 12 (A) is a comparison example 4 An electro-submicrograph of a solder ball sieved by a sieve (magnification: 250 times), and Fig. 12 (B) is an electron micrograph of a partial enlargement of the solder ball shown in Fig. 12 (A) (magnification: 500 times) Fig. 13 is a view showing the results of EDS analysis on the solder balls sieved by the sieve of Example 2. • Fig. 14 shows the discoloration for the sieves by the comparative example 4 Fig. 15 is a view showing the shape of the long hole of the sieve device of the present invention. Fig. 15 is an explanatory view of the deformation of the shape of the long hole of the sieve device of the present invention, and (a) is a long hole shape having a circular arc at the corner portion, ( b) is a sickle shape, (c) is a cross-shaped shape, (d) is a parallelogram shape, (e) is a flyback type, and (f) is an explanatory view of a trapezoidal long hole. Fig. 16(A) is a view showing an example of the arrangement of the long holes provided in the block, and Fig. 16(B) is a view showing another example of the arrangement of the long holes provided in the block, Fig. 16 (C) is a view showing still another example of the arrangement of the long holes provided in the block. Fig. 17 (A) to (C) are diagrams showing an example of arrangement of blocks. [Main component symbol description] 23 321545 201020038
1 篩（金屬板） 2 焊料球（粒子） 3 長孑L 4 基板 5 追加電鍍 31 孔壁 a 中點 BL 區塊 b 間隔 D0 長孔之直徑 L 長孔之長度方向的長度 T1 篩之厚度 T2 追加電鍍之篩的厚度 t 追加電鍍之厚度 W 長孔之寬度 X 銲料球之直徑（粒子之直徑） 24 3215451 Screen (metal plate) 2 Solder ball (particle) 3 Long 孑 L 4 Substrate 5 Additional plating 31 Hole wall a Mid point BL Block b Interval D0 Length of long hole L Length of length of long hole T1 Thickness of sieve T2 Thickness of additional plating screen t Thickness of additional plating W Width of long hole X Diameter of solder ball (diameter of particle) 24 321545