TW201018955A - Optical imaging system, exposure device and device manufacturing method - Google Patents

Abstract

An optical imaging system with high performance is a reflective optical system suitable for an exposure device using EUV light, so as to ensure a relatively large axial separation between a first reflective mirror and an object surface and to compensate well an aberration. An optical imaging system (6) that forms the image of a first surface (4) onto a second surface (7) includes, according to a light incident sequence, a first reflective mirror (M1), a second reflective mirror (M2), a third reflective mirror (M3), a fourth reflective mirror (M4), a fifth reflective mirror (M5), and a sixth reflective mirror (M6). The first reflective mirror (M1) is arranged closer to a second surface than the fourth reflective mirror (M4), and the third reflective mirror (M3) is arranged closer to the second surface than the second reflective mirror (M2). The second reflective mirror and the third reflective mirror are arranged between a first specified surface and the fourth specified surface. The first specified surface specifies a reflective surface of the first reflective mirror, and the fourth specified surface specifies a reflective surface of the fourth reflective mirror. The incident pupils of the optical imaging system clamp the first surface and are located at the opposite side of the optical imaging system.

Description

201018955 32513pif.doc VI. Description of the Invention: [Technical Field] The present invention relates to an imaging optical system, an exposure apparatus, and a method of manufacturing the same. More particularly, the present invention relates to an imaging optical system suitable for an exposure apparatus that uses, for example, Extreme Ultraviolet (EUV) light to mirror the reticle by means of mirror projection. The circuit pattern is transferred onto the photosensitive substrate. [Prior Art] Previously, as an exposure apparatus used in the manufacture of a semiconductor element or the like, EUV having a wavelength of, for example, about 5 to 40 nm was used (Extreme)

Ultraviolet: Ultra-violet light exposure devices are attracting attention. When EUV light is used as the exposure light, since there is no transmissive optical material and a refractive optical material that can be used, a reflective reticle is used, and a reflective optical system (an optical system composed only of a reflective member) is used as a projection optical system. . A reflective optical system that has an entrance pupil and has an entrance pupil on the opposite side of the optical system has been proposed as an imaging optical system that is applicable to a projection optical system using an exposure device for EUV light (refer to Patent Document 1 and Patent Literature). 2). Hereinafter, in the present specification, an "imaging optical system having an entrance pupil and having an entrance pupil on the opposite side of the optical system" is referred to as a "backlit optical system". [Prior Art Document] [Patent Document] 201018955 32513pif.doc [Patent Document] Japanese Patent Laid-Open Publication No. 2004-170869 [Patent Document 2] International Patent Publication No. 2006/119977

In the imaging optical system disclosed in Patent Document 1, the aberration is well corrected. However, in the imaging optical system of S', it is difficult to ensure that the mirror (the "first" mirror) which is the first person to emit light from the object surface is sufficiently large on the axis of the object surface. The illumination optical system is incident on a deflection beam disposed between the illumination optical system and the reflective reticle to interfere with the first mirror of the imaging ray system. The imaging optical system towel disclosed in Patent Document 2 ensures that the axial distance between the first mirror and the object plane is relatively A, so that it is easy to avoid the light beam and the imaging light source from the illumination system. i reflection 2 interference. However, the image-forming optical towel has not been well received, and the invention has been developed. The object of the invention is to provide an imaging optical system which is suitable for use in, for example, EUV light. The ίίΓ reflection optical system ensures that the first mirror and the object surface are large and the aberrations are well corrected. Moreover, the imaging optical system of the present invention of the present invention is suitable for use in an exposure apparatus and uses EUV light as, for example, exposure light to ensure the image power (function >lvingpower), and projection exposure is performed at a high resolution 201018955 32513pif.doc light. In order to solve the above problems, a first aspect of the present invention provides an imaging optical system in which an image of a first surface is formed on a second surface, wherein the order of incidence of light from the first surface is included, including a mirror, a second mirror, a third mirror, a fifth reflecting mirror, and a sixth reflecting mirror, wherein the first reflecting mirror is disposed closer to the second surface than the fourth reflecting mirror The third mirror is disposed closer to the second surface than the second mirror, and the 苐2 mirror and the 苐3 mirror are disposed on a first predetermined surface defining a reflection surface of the first mirror. The entrance pupil of the imaging optical system sandwiches the first surface and is located on the opposite side of the imaging optical system between the fourth predetermined surface defining the reflection surface of the fourth mirror. According to a second aspect of the present invention, there is provided an imaging optical system comprising: an image on a first surface formed on a second surface, wherein the first mirror and the second reflection are included in accordance with an incident order of light from the first surface a mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror, wherein the first surface is oriented along the optical axis of the imaging optical system toward the second surface The intersection of the fourth predetermined surface of the reflecting surface of the mirror and the optical axis, the intersection of the second predetermined surface defining the reflecting surface of the second mirror and the optical axis, and the reflection of the third mirror are defined 201018955 32513pif.doc An intersection of the third predetermined surface of the surface with the optical axis and an intersection of the first predetermined surface defining the reflection surface of the first mirror and the optical axis, wherein the entrance pupil of the imaging optical system sandwiches the first surface Located on the opposite side of the imaging optics described above. A third aspect of the present invention provides an exposure apparatus including: an illumination system for illuminating a predetermined pattern provided on the first surface by light from a light source; and an i-th or second aspect The ® imaging optical system 'is used to project the predetermined pattern onto the photosensitive substrate provided on the second surface. According to a fourth aspect of the present invention, there is provided a method of manufacturing a device, comprising: exposing a step of exposing the predetermined pattern to the photosensitive substrate using an exposure apparatus according to a third aspect; and developing the step of transferring the predetermined portion The photosensitive layer-developing pattern of the pattern is formed on the surface of the photosensitive substrate with Q corresponding to the predetermined pattern; and the processing step 'the table of the photosensitive substrate via the mask layer Rain is processed. [Effects of the Invention] In the embodiment of the present invention, in the imaging optical system which is a backlight system using EUV light, the first mirror, the second reflection = the third mirror, and the fourth reflection are used. The mirror forms an Offner-type optical system, and the Schwarzshild optical system is constituted by the fifth mirror and the sixth mirror. And 'About the 1st to 4th mirrors, using the magnification of 201018955 32513pif.doc (power) to achieve a good symmetry implementation - high intensity _ imaging optics ^ n this embodiment of the light can be used to expose the illuminating material for winter reading · The on-axis spacing is relatively large and the aberration is good. When the positive mirror and the object surface are ,, the imaging optical system can be applied to expose the agricultural light. At this time, a long calender of the mask skin to be transferred can be used as the exposure J for the imaging optical system, and: = = = scanning type exposure apparatus, 'Embodiment】 The implementation of the hybrid ride on this date (four). Fig. 1 is a view showing the configuration of an exposure apparatus according to an embodiment. And ^ is an image of an arc-shaped effective imaging area that is not formed on the wafer 盥 == positional relationship. In the figure, the X direction of the printing surface of the imaging optical system 6 is set to the normal direction of the exposure surface (rotation) of the wafer 7 as the photosensitive substrate, and is set to 2 axes in the exposure surface of the wafer 7. The axis is set in the direction parallel to the iis, and the x-axis is set in the direction perpendicular to the plane of the paper of FIG. 1 in the exposure surface of the wafer 7. The exposure apparatus for 21 includes, for example, a laser plasma X-ray source as the light source 1 for giving exposure light. As the light source 1, a discharge plasma source 8 201018955 32513pif.doc or other X-ray source can be used. The self-selecting wavelength selection filter (not: _ emitted light is configured by the wavelength-selective wave device as required. The EUV light of a predetermined wavelength (for example, 13·5_) is selectively shielded from the transmission of other wavelengths of light. ^(4) Covered by '

Select the £UV ❹ integrator of the money by wavelength. By vertical and horizontal (optical concave mirror elements separately constructed; multiple glasses; == composition, can refer to, for example, the beauty = ^ this 'reflection at the second complex ophthalmic lens = Na surface light source. The substantial surface light source forms 3; : 朗 稷 稷 2 = = = = = = = = = = = = = = = = = = 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明 照明The position of the entrance pupil of the optical system is the same as that of the entrance pupil. The light from the permeabilized surface source, that is, the light emitted from the illumination optical system, is biased by the Wei (3) After the ride, the arc-shaped aperture portion (light-transmitting portion) of the visual field diaphragm (not shown) is interposed and matched with the field of view of the reflective mask 4, and an arc is formed on the mask 4. Thus, the light source 丨 and the illumination optical system ^ (2a, 2b) constitute an illumination system for performing Kohler illumination on the reticle 4 provided with a predetermined pattern. 201018955 32513pif.doc 4 is held by the reticle stage 5 movable in the Y direction to make its pattern edge The XY plane extends. The movement of the reticle stage 5 is measured by a laser interferometer ("aser interfer 〇 meter"). On the reticle 4, for example, an arc-shaped illumination that is symmetrical with respect to the γ axis is formed. The light from the illuminating reticle 4 passes through the imaging optical system 6 to form a pattern image of the reticle 4 on the wafer 7 as a photosensitive substrate. That is, as shown in FIG. 2, on the wafer 7. An effective imaging region ER having an arc shape symmetrical with respect to the γ axis is formed. Referring to FIG. 2, a circular region (imagedrde) ❿ IF having a radius YG centered on the optical axis ape, and The imaging circle IF is connected to form an arc-shaped effective imaging region ER having a length LX in the x-direction and a length γ in the γ direction. The arc-shaped effective imaging region ER is a band-shaped region centered on the optical axis Αχ In part, the length LY is the width dimension of the effective imaging area ER along the direction connecting the center of the arc-shaped effective imaging area £]1 with the optical axis. The male circle 7 is two-dimensionally movable along the X direction and the Y direction. The moving wafer stage 8 is held so that its exposure surface is along the χ The plane extension 曰. The movement of the wafer stage 8 is the same as that of the reticle stage 5, and is measured by omitting the sputum interferometer of Fig. 8. Thus, on the one hand, the reticle stage 5 is made of wafer The stage 8 is moved in the Υ direction, and the imaging optical system 6 is relatively moved even if the reticle 4 and the wafer 7 are in the direction of the yoke, and the scanning exposure is performed on the one hand, thereby patterning the reticle 4 Transfer to one exposure area of the circle 7. At this time, when the projection magnification (transfer magnification) of the imaging optical system 6 is 1/4, 'the moving speed of the wafer stage 8 is set to a mask. The stage''5 10 201018955 32513pif.doc is 1/4 of the moving speed for simultaneous scanning. The wafer stage 8 advances in the X direction and the γ direction, and by scanning and exposing the surface of the wafer cover 4, the image of the mask 4 and the line are moved one-dimensionally in the respective exposure areas. - transfer to wafer 7 as described above, when used as a backlighting optical system,

6 When it is applied to an exposure apparatus using EUV light, the image between the imaging optical system illumination optical system IL and the reflective reticle 4 is configured as follows: 3' and by the deflection mirror 3 The reticle 4 is guided to the reticle in the second way. The reason is that, if it is not inserted: the action of the two-beam type photomask 4, the imaging optical system brother J is "in the optical path of the optical system 6 itself, and thus the position of the entrance pupil and the illumination optics The emission light of the system IL is set to be equal to 0. As the reflection _ generation (four) (material) forming the deflection mirror 3, Ru (钌) is known. Fig. 3 shows the reflection characteristics of the reflecting surface formed by the borrowing. In Fig. 3, the vertical axis represents the reflectance (%) of the calendar with respect to the wavelength μ (10), and the horizontal axis represents the angle (degree) of the light incident on the reflecting surface. Further, in Fig. 3, reference numeral 31 denotes a light reflection characteristic of the light reflection characteristic of the s polarized light with respect to the reflection surface, and reference numeral 33 denotes a light reflection characteristic of the unpolarized light. Referring to Fig. 3, in order to obtain a sufficient reflectance in the deflection mirror 3, the incident angle of the illumination from the illumination optical system to the reflection surface of the deflection mirror 3 is made larger. However, when the incident angle of the light from the illumination optical system IL to the reflection surface of the deflection mirror 3 is made large, as long as the light from the object surface (the light reflected from the pattern surface of the reticle 4) is originally When the axial distance between the incident mirror M1 and the object plane is not sufficiently ensured, it is difficult to prevent the light beam incident on the deflection mirror 3 from the illumination optical system IL from interfering with the 丨 mirror m. In the imaging optical system 6 of the present embodiment, it is important that the aberration is well corrected, and that the axial distance between the mask 4 and the second mirror M1 is sufficiently large. In the imaging optical system disclosed in Patent Document 1 and Patent Document 2, in the order of incidence of light from the object surface, the four mirrors in the front stage constitute an Offner type optical system, and the two mirrors in the latter stage constitute an Schwarzshild type optical system. . In general, the 〇ffner type optical system can ensure a certain degree of field of view, but as long as it is not used for imaging at a magnification of equal magnification or nearly equal magnification, large aberrations are likely to occur. On the other hand, in the Schwarzshild type optical system, it is possible to image at a magnification other than the equal magnification without causing a large aberration, but it is difficult to secure a large field of view. Therefore, in the backlit optical system including the six mirrors as described above, the required magnification is ensured by the Schwarzshild type optical system including the two mirrors of the latter stage, and by including the four mirrors of the front stage ❹ Offner-type optical system to form an approximately equal-fold intermediate image of the object. At this time, in the previous backlight optical system, the field of view was barely enlarged by the Schwarzshild type optical system in the latter stage. Therefore, the image generated in the Schwarzshild type optical system of the latter stage was corrected by the 〇ffner type optical system in the front stage. Poor (mainly field curvature (f^eld curvature), astigmatism, etc.).

Due to its basic properties, the Offner-type optical system is prone to large aberrations when used for imaging at the same time as the 201018955 32513pif.doc. Therefore, in order to suppress the generation of aberrations, it is desirable that the four mirrors of the front stage adopt a symmetrical magnification configuration. In the imaging optical system disclosed in Patent Document 2, the symmetry of the magnification configuration of the front four mirrors constituting the 灯-lamp type optical system is broken, and the symmetry destruction of the magnification configuration is regarded as causing the image to be completely corrected. Poor ^ cause. In the imaging optical system 6 of the present embodiment, the four mirrors 前 M M2, M3, and M4 in the front stage constitute an OFDM type optical system, and the two mirrors M5 and VI6 in the latter stage constitute a Schwarzshild type optical system. Further, by using the four mirrors M1 to M4 which are further configured to have a good symmetry configuration, the axial distance between the mask 4 and the first mirror M1 is ensured to be large, and the aberration is well corrected. Hereinafter, a specific configuration of the imaging optical system 6 will be described with reference to the second embodiment and the second embodiment. As shown in FIG. 4 and FIG. 5, the imaging optical system 6 of the first embodiment and the second embodiment includes a reflection optical system G1 for linearly extending a single optical axis AX to and from the reticle 4. The pattern surface is an intermediate image formed by patterning at an optical conjugate position; and a second reflection optical system G2 for forming a final reduced image of the pattern of the reticle 4 (intermediate imaged image) on the wafer 7. . In other words, a surface that is optically conjugate with the pattern surface of the mask 4 is formed in the optical path between the first reflection optical system G1 and the second reflection optical system G2. The reflection optical system G1 has a first mirror M1 having a concave reflecting surface, a second mirror M2 having a convex reflecting surface, and a third mirror m3 having a convex reflecting surface in accordance with the incident order of light. Concave 13 201018955 32513pif.doc · The fourth reflecting mirror M4 of the planar reflecting surface. The second reflecting optical system G2 is composed of a fifth reflecting mirror M5 having a convex reflecting surface and a sixth reflecting mirror M6 having a concave reflecting surface in accordance with the incident order of light. An aperture stop AS is provided in the optical path from the second mirror M2 to the third mirror M3. The aperture of the imaging optical system 6 is not disposed in the optical path of the imaging optical system 6 except for the aperture stop AS. The numerical aperture of the imaging optical system 6 is determined only by the limitation of the aperture by the aperture stop AS. In the respective embodiments, the light from the region (illumination region) deviated from the optical axis AX in the pattern surface (first surface) of the mask 4 is convexly reflected by the first mirror mi and convex from the second mirror M2. The reflective surface, the convex reflecting surface of the third mirror M3, and the concave reflecting surface of the fourth mirror M4 are sequentially reflected, and an intermediate image of the mask pattern is formed. The light from the intermediate image formed by the first reflection optical system G1 is sequentially reflected by the convex reflection surface of the fifth mirror M5 and the concave reflection surface of the sixth mirror M6 on the surface of the wafer 7 (the The region (effective imaging region ER) that deviates from the optical axis AX in the two faces forms a reduced image of the reticle pattern. In the respective embodiments, the reflecting surfaces of the "all mirrors M1 to" \46 are defined by aspherical (curved surface) predetermined surfaces S1 to S6 which are rotationally symmetrical with respect to the optical axis AX. Further, the first mirror M1 is disposed closer to the wafer side than the fourth mirror M4, and the third mirror M3 is disposed closer to the wafer side than the second mirror M2, and the second mirror M2 and the third mirror are disposed. M3 is disposed between the first predetermined surface S1 defining the reflection surface of the first mirror M1 and the fourth predetermined surface S4 defining the reflection surface of the fourth mirror M4. 201018955 32513pif.doc For other performances, 3' from the optical axis AX of the photomask 4 edge imaging optical system 6 toward the wafer 7', there is a fourth predetermined surface S1 and an optical axis AX of the reflecting surface of the mirror 4 mirror. The intersection point, the intersection of the second gauge surface S2 defining the reflection surface of the second mirror M2 and the optical axis 、, the intersection of the third predetermined surface S3 defining the reflection surface of the third mirror M3 and the smooth surface 、, and the regulation The intersection of the predetermined surface S1 of the reflecting surface of the first reflecting mirror M1 and the optical axis AX. Further, the fifth mirror M5 is disposed closer to the wafer side than the sixth mirror M6. The imaging optical system 6 of each embodiment is a backlight optical system having an entrance pupil sandwiching the reticle 4 and at a predetermined distance from the opposite side of the imaging optical system 6. Moreover, the imaging optical system 6 of each embodiment is an optical system that is telecentric with respect to the wafer side (image side). In other words, in each of the embodiments, the chief ray reaching the image plane of the imaging optical system 6 is substantially perpendicular to the image plane. With this configuration, good imaging can be performed even if the wafer has irregularities in the depth of focus of the imaging optical system 6. © [First Embodiment] The parameter values of the imaging optical system of the second embodiment are listed in the following Table (1): in the main parameter column of Table (1), the wavelength of the exposure light is also indicated, and the cold table is not imaged. , ΝΑ denotes the image side (wafer side) numerical aperture, Υ0 denotes the radius of the imaging circle IF on the wafer 7 (maximum image height), LX denotes the size of the effective imaging area ER along the χ direction, and LY denotes the effective imaging area The dimension of the ER along the γ direction (the width dimension of the arc-shaped effective imaging area). 15 201018955 32513pif.doc Table (The column of ray tracing set value and the lens data column are described in the "Code V" format of the optical design software of ORA (Optical Research Associates). The ray tracing set value of Table (1) is blocked. In the middle, ΝΑΟ denotes the image side numerical aperture, MM” denotes the size of mm, WL denotes the wavelength of light (nm), and χ〇Β is the 15 rays used in ray tracing from the image side (wafer side) with respect to X The X-direction component of the angle of the direction (unit: degree), γ〇Β is the γ-direction component (unit: degree) of the angle of 15 rays with respect to the Z direction. In the lens data block of Table (1), RDY represents The radius of curvature of the face® (the radius of curvature of the vertex in the case of aspherical surface; unit: mm), THI indicates the distance from the face to the next face, ie the face spacing (unit: mm)' RMD table is not the reflection The surface transport is a refractive surface. It represents the reflective surface. INFINITY means infinity. If rdy is INFINITY, it means that the surface is a plane. OBJ represents the surface of the wafer 7 as the image plane, STO represents the surface of the aperture stop AS, and IMG represents As a thing The surface of the mask 4 of the surface. The surface number 1 indicates the virtual surface 'surface number 2 indicates the reflection surface of the sixth mirror M6 〇, the surface number 3 indicates the reflection surface of the fifth mirror M5, and the surface number 4 indicates the fourth reflection. The reflecting surface of the mirror M4, the surface number 5 indicates the reflecting surface of the third mirror M3, the surface number 7 indicates the reflecting surface of the second mirror M2, and the surface number 8 indicates the reflecting surface of the first mirror M1. The predetermined surfaces S1 to S6 of the reflecting surfaces of the mirrors M1 to M6 are aspherical surfaces represented by the following formula (a): s = (h2/r) (l+k).h2/r2}]/2[+C4. H4 16 201018955 32513pif.doc "c6 \h^!c h8+i° * hl〇+Cl2 *hl2+Cl4 * hl4+Cl6 · h,6 , (J) Ϊ ' h is perpendicular to the optical axis The height (unit: the distance from the tangent plane from the apex of the aspheric surface to the position on the aspheric surface of the degree h (the amount of the recess)

2 digits) ^ vertex curvature radius (unit 'Μ is cone Η ^ is n aspherical filament. In the lens data column of Table (1), ^ number ^ is the silk C4 of the ,, B is the coefficient C6, C of h6, The 4 coefficient C8, D is the coefficient of h10 C] 〇, E is the coefficient Ci2 of h]2, the coefficient C]4, G is the coefficient Cl6 of h16, and the coefficient Ci8 ' J of H/% hI8 is the coefficient of h20 C2. Moreover, the reflecting surfaces of the respective mirrors]VH to M6 (surface numbers 2, 3, 4, 5, 7, and 8). The XDE, YDE, and ZDE in the X-direction of the surface

Directional knives (unit: mm), gamma-direction components (unit: Jiang blood), and Z-direction components (unit: mm). ADE, BDE, and 〇〇 represent the θχ direction component of the surface rotation (rotational component around the X axis; unit: degree), θγ direction component (rotational component around the γ axis; unit: degree), and 0

Ζ Directional component (rotational component around 2: axis; unit: degree). Moreover, DAR indicates that the coordinates (X, Y, Z) after the face have not changed. That is, even if the surface recorded as DAR is centrifuged, the surface on the rear side is still separately centrifuged on the surface described only as DAR, and does not follow the new coordinates after centrifugation. The expression in the 'Table' is also the same in the following Table (2). Table (1) (main parameters) λ = 13.5 nm 17 201018955 32513pif.doc β = ΜΛ ΝΑ-0.33 Υ0 = 30.5mm LX = 26mm LY = 2mm (ray tracing set value) ΝΑΟ 0.33000

DIM MM WL 13.50 XOB 0.00000 0.00000 0.00000 0.00000 0.00000 6.50000 6.50000 6.50000 6.50000 6.50000 13.00000 13.00000 13.00000 13.00000 13.00000 YOB 51.70000 52.20000 52.70000 53.20000 53.70000 51.29761 51.79761 52.29761 52.79761 53.29761 50.07142 50.57142 51.07142 51.57142 52.07142 (Lens data) THI RMD 〇.〇〇〇〇〇〇

RDY

OBJ: INFINITY 1: INFINITY 444.145481

2: -516.73773 -397.097310 REFL ASP: K : 0.120649 A :0.483058E-10 B :0.684414E-16 C :0.983146E-22 D :-.967074E-28 E :-.246009E-32 F .-0.332682E- 37 G rO.OOOOOOE+OO H :O.OOOOOOE+O0 J :0.000000E+00 XDE: 〇.〇〇〇〇〇〇YDE: -0.323301 ZDE: 〇.〇〇〇〇〇〇DAR ADE: 0.012756 BDE: 〇.〇〇〇〇〇〇CDE: 〇.〇〇〇〇〇〇-1231.10056 1104.842277 REFL ASP: K :19.093609 A :-.262384E-08 B :-.100647E-13 C :'435255E-18 D :0.111694 E-22 E : -.158505E-26 F :0.809174E-31 G :0.000000E+00 H :0.000000E+00 J :O.OOOOOOE+O0 XDE: 〇.〇〇〇〇〇〇YDE: -0.459401 ZDE : 〇.〇〇〇〇〇〇ADE: 0.020732 BDE: 〇.〇〇〇〇〇〇CDE: 〇.〇〇〇〇〇〇]8 201018955 32513pif.doc 4: -824.05681 -474.816098 REFL ASP: K :- 0.133480 A :-.497022E-10 B >.913935E-16 C :-. E :-.540216E-33 F :-.552024E-39 J :O.OOOOOOE+O0 XDE: 〇.〇〇〇〇〇〇 YDE: 0.393802 ADE: 0.048115 BDE: 〇.〇〇〇〇〇〇

G rO.OOOOOOE+OO H :O.OOOOOOE+QO ZDE: CDE:

DAR 〇.〇〇〇〇〇〇〇.〇〇〇〇〇〇5: -1204.11353 175.948630 REFL ASP: K : 11.579347 A :0.122470E-08 B :-.43 7200E-14 C :0.489202E-19 D : 0.614553E-24 E :-.218477E-28 F :0.570908E-33 G :O.OOOOOOE+O0 H :0.000000E+00 J rO.OOOOOOE+OO XDE: 〇.〇〇〇〇〇〇YDE: -0.070744 ZDE: 〇.〇〇〇〇〇〇DAR ADE: 0.035436 BDE: 〇.〇〇〇〇〇〇CDE: 〇.〇〇〇〇〇〇STO: INFINITY 160.769998 7: 369.83680 -375.908243 REFL ASP: K : 3.031373 A :-.764700E-08 B :-.955891E-13 C :-.230597E-17 D :-.925948E-22 E :0.18301 IE-26 F: :'127505E-30 G :0.000000E+00 H : :0.000000 E+00 J :0.000000E+00 XDE: 〇.〇〇〇〇〇〇YDE: 0.066453 ZDE: 〇.〇〇〇〇〇〇DAR ADE: 0.008963 BDE: 〇.〇〇〇〇〇〇CDE: 〇. 〇〇〇〇〇〇8: 831.60769 1362.095636 REFL ASP: K : -0.013655 A :-.407763E-10 B : '438104E-16 C :0.361354E-23 D : :-.316537E-27 E :0.610944E-33 F : :-.917668E-39 G :0.000000E+00 H : :0.000000E+00 J :O.OOOO OOE+O0 XDE: 〇.〇〇〇〇〇〇YDE: 0.090858 ZDE: 〇.〇〇〇〇〇〇DAR ADE: -0.000654 BDE: 〇.〇〇〇〇〇〇CDE: 〇.〇〇〇〇〇 〇IMG: INFINITY 〇.〇〇〇〇〇〇XDE: 〇.〇〇〇〇〇〇YDE: 1.885739 ZDE: 〇.〇〇〇〇〇〇DAR ADE: 〇.〇〇〇〇〇〇BDE: 〇. 〇〇〇〇〇〇CDE: 〇.〇〇〇〇〇〇❹ ❹ [Second Embodiment] The numerical value of the reference 19 201018955 32513 pif.doc of the imaging optical system of the second embodiment is listed in the following Table (2). Table (2) (main parameters) λ = :13.5 nm β = :1/4 ΝΑ: = 0.35 Y0 = =30.5mm LX = =26mm LY = =2mm (ray tracing set value) Ref. XOB 0.00000 0.00000 0.00000 0.00000 0.00000 6.50000 6.50000 6.50000 6.50000 6.50000 13.00000 13.00000 13.00000 13.00000 13.00000 YOB 51.70000 52.20000 52.70000 53.20000 53.70000 51.29761 51.79761 52.29761 52.79761 53.29761 50.07142 50.57142 51.07142 51.57142 52.07142 (Lens data) RDY THI RMD OBJ: INFINITY 〇.〇〇〇〇〇〇INFINITY 620.422956

GLA

XDE: ADE: 〇.〇〇〇〇〇〇YDE: 0.001466 BDE: 0.306420 ZDE: 〇.〇〇〇〇〇〇CDE: 〇.〇〇〇〇〇〇DAR 〇.〇〇〇〇〇〇2: - 688.04248 -574.987580 REFL ASP: K : 〇.〇〇〇〇〇〇A :-. 140032E-10 B :-.642163E-16 C :-.121085E-21 D :-.437906E-27 E :0.693953E-33 F :-·777754Ε-38 G :〇.〇〇〇〇〇〇Ε+00 Η :〇.〇〇〇〇〇〇E+00 J :〇.〇〇〇〇〇〇E+00

3: -613.23857 1296.793834 REFL ASP: K : 〇.〇〇〇〇〇〇A :-.453028E-08 B :-.49342 IE-13 C :-.595708E-18 D :-.237203E-22 E :0.246677 E-26 F :-.125047E-30 G :0.000000E+00 H :O.OOOOOOE+O0 J :〇.〇〇〇〇〇〇E+00 XDE: 〇.〇〇〇〇〇〇YDE: 0.292807 ZDE : 〇.〇〇〇〇〇〇DAR ADE: 0.001532 BDE: 〇.〇〇〇〇〇〇CDE: 〇.〇〇〇〇〇〇20 201018955 32513pif.doc 4; -940.03142 -580.419215 REFL ASP: κ : 〇 .〇〇〇〇〇〇A:0.718298E-11 B :0.150706E-15 E :-.964020E-32 F :0.108329E-37 G rO.OOOOOOE+OO J :〇.〇〇〇〇〇〇E+ 00 XDE: 〇.〇〇〇〇〇〇YDE: 0.518912 ZDE: 〇.〇〇〇〇〇〇ADE: 0.009587 BDE: 〇.〇〇〇〇〇〇CDE: 〇.〇〇〇〇〇〇C :- .840890E-21 D :0.394436E-26 H :O.OOOOOOE+O0

DAR

5: -747.45027 176.728248 REFL ASP: K : 〇.〇〇〇〇〇〇A :0.587092E-08 B :-.750098E-13 C :0.123917E-17 D :-.166889E-22 E :0.127172E-27F :-.353250E-33 G :O.OOOOOOE+QO H :0.000000E+0Q J :〇.00000〇E+00 XDE: 〇.〇〇〇〇〇〇ADE: 0.006278 YDE: BDE: 0.413646 〇.〇〇 〇〇〇〇ZDE: CDE: 〇.〇〇〇〇〇〇〇.〇〇〇〇〇〇

DAR STO: XDE: ADE: INFINITY 286.368636 〇.〇〇〇〇〇〇YDE: -0.108380 ZDE: 〇.〇〇〇〇〇〇〇.〇〇〇〇〇〇BDE: 〇.〇〇〇〇〇〇CDE : 〇.〇〇〇〇〇〇

DAR 7: 2847.83559 -554.483922 REFL ASP: : 〇.〇〇〇〇〇〇:-.816488E-09 B :0.162081E-14 C :-.845720E-20 D :0.192379E-24 :-.185513E-29 F :0.263527E-35 G rO.OOOOOOE+OO H rO.OOOOOOE+OO J :O.OOOOOOE+O0 XDE: 〇.〇〇〇〇〇〇YDE: 0.403652 ZDE: BDE: 〇.〇〇〇〇〇〇CDE :

K A E ❹ ADE: 0.004636 8: 1276.50965 ASP: K : 〇.〇〇〇〇〇〇 A:-.203951E-10 B E :0.976574E-33 F J :0.000〇〇〇E+00

1329.577044 REFL :-.284717E-16 :-.111237E-38 〇.〇〇〇〇〇〇 〇.〇〇〇〇〇〇

DAR C :0.392856E-22 D :-.371852E-27 G :〇.〇〇〇〇〇〇E+00 H :〇.〇〇〇〇〇〇E+00

XDE: 〇.〇〇〇〇〇〇YDE: 0.309183 ZDE: 〇.〇〇〇〇〇〇ADE: 0.007215 BDE: 〇.〇〇〇〇〇〇CDE: 〇.〇〇〇〇〇〇IMG: INFINITY 〇 .〇〇〇〇〇〇XDE: 〇.〇〇〇〇〇〇YDE: -0.612201 ZDE: 〇.〇〇〇〇〇〇ADE: 〇.〇〇〇〇〇〇BDE: 〇.〇〇〇〇〇 〇CDE: 〇.〇〇〇〇〇〇DAR DAR 21 201018955 32513pif.doc Next, the wavefront aberration of the imaging optical system 6 of each embodiment is verified. In the imaging optical system 6 of the first embodiment, the value of the RMS (ro 〇 mean square or square root) of the wavefront aberration is obtained for each point in the arc-shaped effective imaging region ER, and the result is the minimum value. (Optimal value) is 0.0141 Λ (λ: wavelength of light = 135 nm), and the maximum value (worst difference) is 0.0351 Å. Further, in the imaging optical system 6 of the second embodiment, the minimum value of the RMS value of the wavefront aberration is 0.0273 λ, and the maximum value is 0.0428 λ. In the above embodiments, 'EUV light with a wavelength of 13.5 nm can maintain good imaging performance and a relatively large image side numerical aperture of 〇.33' and ensure that the aberrations on the wafer 7 are well corrected. The 26mmx2 arc-shaped effective imaging area. Therefore, in the wafer 7, the photomask 4 can be transferred by high resolution of 0.1 Am or 〇.1 or less by scanning exposure in each exposure region having a size of, for example, 26 mm x 34 mm or 26 mm x 37 mm. picture of. Further, in each of the above embodiments, the aspherical reflecting surface of each reflecting brother is expressed by the number of screens of 14 times. However, the present invention is not limited thereto, and it is of course possible to use a more advanced term. Further, in each of the above embodiments, the reflecting surface of each of the mirrors has a rotationally symmetrical aspherical shape. However, the present invention is not limited thereto, and may be a non-rotating symmetrical surface shape. Further, 'EUV light having a wavelength of 13.5 nm is exemplarily used in the above embodiments, but is not limited thereto, and EUV light having a wavelength of, for example, about 5 to 4 〇 nm, or other light of a suitable wavelength thereof is used. The present invention is equally applicable to an imaging optical system. Further, in the above embodiment, a variable pattern forming device that forms a predetermined pattern based on predetermined electronic data may be used instead of the photomask. When such a variable pattern forming apparatus is used, even if the pattern surface is vertically placed, the influence on the synchronization accuracy can be minimized. Further, as the variable pattern forming device ', a digital micro-mirror device' DMD including a plurality of reflecting elements driven based on, for example, predetermined electronic materials can be used. An exposure device using a DMD is disclosed, for example, in the United States.

Japanese Patent Publication No. 2007/0296936A1. Further, in addition to a non-light-emitting reflective spatial light modulator such as a DMD, a transmissive spatial light modulator may be used, and a self-luminous image display element may be used. Further, the variable pattern forming device can be used even when the pattern surface is horizontal. 8. The exposure apparatus of the above-described embodiment can be manufactured by assembling various sub-filaments including the respective constituent elements listed in the application of the present invention, and the mechanical precision, the precision of the yarn, and the precision of the yarn are specified by 2. In order to ensure that the animal is in front of the new installation, the sound sensitivity of the various optical systems is 5, and the various systems are used to achieve the machine: = sub = electrical system for electrical precision The assembly steps of the various mechanical connections include various sub-tube connections and the like. The wiring connection and the arrangement of the air pressure circuit are of course long after the assembly step of each optical device of each sub_ is completed, and various precisions of the subsystem to the exposure device are performed. Further, it is reasonable to ensure that the exposure apparatus is preferably manufactured in a clean room (Cleanr_) managed in 201018955 32513pif.doc. The method will be described as a component manufacturing diagram of the exposure apparatus. As shown in FIG. 6, a flow chart showing a manufacturing step of a semiconductor element, in a manufacturing step of a semiconductor element, is used as a semi-conductive metal film (step _, coating the film as a photosensitive material) Photoresist

Warm m brain ^ (step s42). Next, using the apparatus of the above-described embodiment, the mask is formed on the reticle (ret M = each shk t area on the wafer w (step s44 == )' and the transfer is completed. Development of the crystal sw, development of the transferred photoresist (step S46: development step). Then, the photoresist pattern formed on the surface of the wafer w by the step S46 is used as a mask 'Processing such as etching (ething) on the surface of the wafer w: processing step). Here, the photoresist pattern means a photoresist layer having irregularities having a shape corresponding to the pattern transferred by the exposure apparatus of the above-described embodiment, and the concave portion penetrates the fine layer. In step S48, the surface of the wafer W is processed through the photoresist pattern. The processing performed in step S48 includes, for example, at least one of etching of the surface of the wafer w or film formation of a metal film or the like. Further, in step S44, in the exposure apparatus of the above embodiment, the wafer W coated with the photoresist is patterned and transferred as a photosensitive substrate. Further, in the above embodiment, the laser plasma and the radiation source are used as the light source for supplying the EUV light, but the invention is not limited thereto, and for example, synchrotron orbital radiation (SOR) may be used. 201018955 325I3pif.doc Light as EUV light. Further, in the above embodiment, the present invention is applied to an exposure apparatus having a light source for supplying EUV light. However, the present invention is not limited thereto, and the present invention may be applied to an exposure having a light source that supplies light of other wavelengths than EUV light. Device. ❹ Ο In the above embodiment, the present invention is applied to an imaging optical system of a projection material system as an exposure apparatus, but it is also abbreviated to this. In general, the present invention can be similarly applied to the first surface. Like an imaging optical system formed on the second surface. Although this (4) has been exposed as above in the actual situation, it is not intended to limit the ordinary knowledge in the technical field of the two or two, and it can be used to make some changes and refinements without leaving the hairpin. Therefore, this [simplified version of the map is based on the definition of the product. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view schematically showing the arc-shaped effective imaging region formed on a wafer of the shaft of the present invention, and the reflection characteristic of the reflecting surface shown by _. Figure 1 shows the composition of the Weiss 1st real (4) image like the structure of the light system Figure 5 The implementation of the image of the county 42 _ imaging light (four) system 疋 table does not obtain the semiconductor component as a micro component 201018955 32513pif.doc A diagram of an example of a process. [Main component symbol description] 1: Laser plasma X-ray source 2a, 2b: Multi-eye lens 3: Deflection mirror 4: Mask

5: reticle stage 6: imaging optical system 7. wafer 8: wafer stage 31: s polarized light reflecting characteristic of reflective surface 32: light reflecting characteristic of p-polarized light relative to reflecting surface 33: unpolarized light Reflection characteristics AS: aperture stop

AX: optical axis ER: effective imaging area IL: illumination optical system IF: imaging circle Gb G2: reflection optical system LX: length in the X direction LY: length in the Y direction M1 to M6: mirrors S1 to S6: prescribed surface S40 ~S48: Step 26 201018955 32513pif.doc Y0 : Radius

27

Claims (1)

201018955 32513pif.doc VII. Patent Application Range: 1. An imaging optical system in which an image of a first surface is formed on a second surface, characterized in that the first order of light from the first surface includes the first a mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror, wherein the first mirror is disposed closer to the second surface than the fourth mirror, ▲ The third mirror is disposed closer to the second surface than the second mirror, and the second mirror and the third mirror ' are disposed on a first predetermined surface defining a reflection surface of the first mirror The entrance pupil of the imaging optical system sandwiches the first surface and is located on the opposite side of the imaging optical system between the surface and the fourth predetermined surface defining the reflection surface of the fourth mirror. 2. An imaging optical system in which an image of a first surface is formed on a second surface, and is characterized in that: the first mirror and the second mirror are included in accordance with an incident order of light from the first surface a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror, wherein the fourth surface is oriented from the first surface along the optical axis of the imaging optical system toward the second surface An intersection of a fourth predetermined surface of the reflecting surface of the mirror and the optical axis, an intersection of a second predetermined surface defining a reflecting surface of the second mirror and the optical axis, and a reflection of the third reflecting mirror 28 201018955 32513pif. An intersection of the third predetermined surface of the doc surface with the optical axis and an intersection of the first predetermined surface defining the reflection surface of the first mirror and the optical axis, and the entrance pupil of the imaging optical system sandwiches the first surface And located on the opposite side of the above imaging optical system. 3. The imaging optical system according to Item 1 or 2, wherein the first mirror to the fourth mirror are conjugated to the first surface based on light from the first surface. Position, the fifth mirror and the sixth mirror form the image on the second surface based on light from the common position. 4. The imaging optical system according to any one of claims 1 to 3, wherein the first mirror and the fourth mirror have a concave reflecting surface, the second mirror and the The third mirror has a convex reflecting surface. 5. The imaging optical system according to any one of claims 1 to 4, wherein the fifth mirror is disposed closer to the second surface than the sixth mirror. 6. The imaging optical system according to claim 5, wherein the fifth mirror has a convex reflecting surface, and the sixth reflecting mirror has a concave reflecting surface. 7. The imaging optical system according to any one of claims 1 to 6, comprising an aperture stop disposed in an optical path of the second mirror to the third mirror. 8. The imaging optical system according to claim 7, wherein the numerical aperture of the imaging optical system is determined only by the aperture aperture of the optical aperture of 29 201018955 32513 pif.doc. 9. For example, in the application of the second to eighth items of the patent scope, the above-mentioned reduced image is formed on two sides. 10. For example, in the patents (i) to (9), the image optics (10), wherein the above-mentioned imaging material is generally a side-centered system. W. The second surface as described above 11. The invention relates to the imaging optical system, wherein the above-mentioned third embodiment is a curved surface. The first face and the above-mentioned fourth rule face dreams are from i2, and the frequency sign is (4): according to the Japanese line system, used for hunting by the pair of light pairs set in the above-mentioned face = 4 application: special: range item 1 To the eleventh item -= the above-specified pattern is projected to the exposure area set in the above-mentioned item 12, wherein EVS light having a wavelength of 5 nm to 4 Å is composed of # IS phase 6 . The imaging optical plate is applied to the above-mentioned sense substrate. % will be a money projection projection member manufacturing branch, characterized in that it comprises: the exposure device described above, the step of developing the above-mentioned Lai ^ patent dry circumference item 12 or 13 to transfer the ^, m to · New Zealand substrate; The photosensitive layer 30 201018955 32513 pif.doc of the pattern of the above-mentioned pattern is developed, and a mask layer having a shape corresponding to the predetermined pattern is formed on the surface of the photosensitive substrate; and a processing step is performed through the mask layer The surface of the photosensitive substrate is processed. 31